TW201106408A - Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches - Google Patents

Abstract

Device design methods for use with non-volatile nanotube switches are disclosed. In a first aspect of the present disclosure, a plurality of nonconductive nanoparticles is adhered to a nanotube element such as to provide an isolation barrier from a control electrode and further provide a switching gap above that element. In a second aspect of the present disclosure, conductive nanoparticles are dispersed and adhered to either a control electrode or to a nanotube element positioned over said electrode element such that the interface area (that is, the area of the nanotube element which comes into contact with the control electrode) is minimized. In a third aspect of the present disclosure, a monolayer network of nonconductive nanotubes is used to provide an isolation barrier between a control electrode and a nanotube element. Voids or spaces in said monolayer network further provides switching gaps.

Description

201106408 VI. Description of the invention: [Reciprocal reference material of the relevant application] The present invention claims the priority of U.S. Patent Application Serial No. 12/537,651, which is filed on August 7, 2009, entitled "Nano-tube Electrostatic Discharge Protection" The device and the corresponding non-volatile and volatile nanotube switch (Nanotube ESD Protective Devices and Corresponding Nonvolatile and Volatile Nanotube Switches). TECHNICAL FIELD OF THE INVENTION The present invention relates generally to electrostatic discharge (ESD) protection, and more particularly to the use of nanotube switching elements in the formation of circuits to enhance semiconductors, hybrid semiconductors, and nanotubes, and Electrostatic discharge (EDS) protection of nanotube-only circuits. [Prior Art] In each generation of electronic devices, electrical overvoltages generated by electrostatic discharge (ESD) are a major problem, such as the generation of oxides and the failure of, for example, series resistance cracking, open circuit and short circuit. . The nanotube resistance may be used to replace, for example, the series resistance of the polycrystal used, and to improve the resistance of the protection device for ESD induced faults. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates a prior art protection device (PD) schematic diagram comprising a series resistor 16 and a plurality of semiconductor diodes 18. The ESD pulse applied to one of the input pads 12 is attenuated by the resistor 16 and the semiconductor diode 18, which reduces the ESD voltage applied to the node , to avoid damage to the circuit 14 protected by the 201106408, as described. Book HB Bakoglu, "Circuits, Interconnects, and Packages for VLSI," Addison-Wesley Publishing Company, 1990, pp. 46-51. For some input or output solder dies, there is no series resistor 16 and only the semiconductor diode 18 is used. Resistor 16 may be fabricated by using, for example, a polycrystalline or diffusion layer, or other suitable resistive material, and may be in the range of, for example, 10 炱 100,000 ohms. Conventional resistors fabricated by using polycrystals or diffusion layers, for example, cannot exist in the form of ESD pulses, which, due to the combination of current density and temperature, cause the resistance to become an open circuit. For example, the structure of the protective device of the prior art shown in Fig. 10 has a relative capacitance value of, e.g., 1.5 pF, as described in U.S. Patent No. 6,141,245 to Bertin et al. If an output driver drives, for example, eight parallel chips in a memory address line, the protection device that contributes to the capacitive load is 12pF. Figure 3 shows a prior art structure 39 not shown in U.S. Patent No. 6,141,245, in which a fuse 4 is attached to a conventional protective device along with (4) solder-and-sense, and the current can be forced into the input mirror wire. Between the welds. After this element m(d), the current is forced to sever the connection of the protected circuit to the protection device via the filament ' until it is open circuited to reduce the capacitance 胄, as illustrated in U.S. Patent 6,141,245. Because the fuse blow operation is irreversible, it is not possible to remove and process this component without the high risk of ESD damage.

The carbon-carbon nanotubes can exhibit a high heat transfer coefficient at a current density of 100 times the current density of the steel, and do not fail due to excessive heating. For example, the children are listed in the references Srivastava and Banei.jee, "a kind of Meter Grade LSI 201106408 Comparative Scale Analysis of Metal and Carbon Nanotube Interconnections for Technology", Proceedings of the 21st Century International VLSI Multiple Inline Symposium (VMIC), September 39-October 2, 2004 , Waikoloa, HI, pp. 393-398. These and other characteristics of the carbon nanotubes are described in the Nantero carbon nanotube patent, patent disclosure, schedule, etc. incorporated herein. SUMMARY OF THE INVENTION The present invention provides a device design method for a non-volatile nanotube switch.尤ί L The present invention provides a nanotube switch comprising: - a control electrode; a nano-manifold (a nanotube element comprising a single-walled nanotube); at least one signal, a pole: electroporation to the nano a tube element; a non-conductive nanoparticle, at least one surface of the binder, and wherein the non-conductive nanoparticle nanotube element is coated on the (four) electrode _L side. In another embodiment, the present invention provides a nanotube switch comprising: a control electrode; a nanotube element (the nanotube element comprises a single-walled nano-at least a signal electrode' electrical secret to a nai tube meter t Bonded to at least the surface of the tube element, and 4;; in the nanotube element 2: 2: at least one of the conductive nanoparticle sites in the 'invention provided by the invention, the species contains: Tube); at least r,: bureaucracy (nanotube element contains single-walled nano-twisted s (non-conductive nano-hole of early-layer mesh)' and the non-conductive nano-tube system of single-layer network is located 2 6 201106408 Connected to the hole to expose the control electrode to cross the _, to feed the bribe - Naigui component system [implementation] carbon nanotube protection (four) sub-device protection machine, 1 'vegetation witnessed The addition of electric devices to the need for ',, hunting, non-volatile carbon nanotube protection technology, a part of the structure of their habits than the current use of 'tit hair nanotube protection device will be non-volatile The government has a much lower value of the attached capacitor, so the Luo 厶 2 protection device is added to the existing electronic nightmare The replacement of the protection device is therefore protected by the non-volatile carbon nanotubes and the chirping reduces the input 盥 to promote the higher operating speed. The carbon captures the tube two out: the electricity ☆ negative, the hunting substrate (such as stone) In the evening, the pottery device may be used in any level (eg θ ' and (4) this is attached to -, level 2: 2 = 2 and may store the nanotube-only logic or memory In the case of a body (such as a semiconductor type diode structure), the non-volatile nanotube protection device can be used instead to provide an electrostatic discharge (ESD) tilt. In operation, the wafer and/or substrate and/or card and/or board may be set to stay in a certain: non-volatile ESD protection mode for startup purposes for component processing purposes. ESD protection mode may not be activated. 201106408 If 70 pieces are to be removed and further processed, the non-volatile protection mode may be activated before being removed from the system. Non-volatile nano tube protection濩 device can also be used to protect the system The system is protected from system power-on problems / it is powered by the first activated non-volatile nanotube protection device, then the system power is turned on' and then the non-volatile nanotube protection device is not activated for the system to operate at any level Components (wafer, substrate, card, board) or components above one level. Or 'in nanotube logic or memory (here not used in conventional technology to protect device structures such as semiconductor diodes In the case of a semiconductor junction, a volatile nanotube protection device may be used instead to provide electrostatic discharge protection. In operation, it may be initiated (〇FF) and activated using the voltage normally induced by £SD. (turned_〇n) a volatile nano-protective device to protect the wafer and/or substrate and/or card and/or board. Electronic components may be protected by a combination of volatile and non-volatile nanotube protection devices. The SWNT resistor using the current protection device method for better ESD protection is shown in FIG. 2A as a plan view of the protection device structure 2A, while FIG. 2B shows the profile AA of the security device structure 20, wherein the protection device 10 is known. A string such as resistor 16 has been replaced by carbon nanotube resistor 24. The carbon nanotube resistance is described in U.S. Provisional Patent Application No. 6G/6U, 765, entitled "Impact Element Using Carbon Nanotubes", and the application date is September 21, 2004, all of which For inclusion as a reference. As shown in FIGS. 2A and 2β, the pair of 201106408 is connected to the carbon nanotube resistor 24 of the pad 12 of the pad 12 of FIG. 1, and the carbon defts 22, which is thus connected to the reliance by another conductor 25. And the opposite side of 24 borrows the protective device of the tantalum carbon nanotube resistor 36 ^ 2 Figure 2. The use of the string is shown in Fig. 2A and Shen's π is too half, and the outline is shown in Fig. 3〇. Corresponding to the unrecognized rabbit Naiwei resistance 24, by using the 锼 锼 锼 蚪 蚪 奴 奴 奴 奴 36 36 36 36 36 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;奈,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Ti'cr, Ab W, Cu, Mo, In, Tr, Ph c recognize the metal of the sensation 11, and other suitable genus, sigh these combinations. Metal alloy (such as Mu,

TlCu, TAd, PbIn, Tiw) and other suitable conductors (including cnt themselves (such as single-wall, multi-wall containing double walls), or conductive nitrides, oxides or orthocyanides or conductive nitrides, oxides , or Shi Xi Compound (for example

RuN, RuO, TiN, TaN, CoSiJ TiSix) may be used. Other types of conductors or semiconductors and materials can also be used. A preferred method of patterning the conductors may use well known photolithographic techniques and well known etching techniques such as wet etching and reactive ion etching (RJE). For example, a typical value for a conductor for a single SWNT contact resistance scale is approximately 10,000 ohms. Since there are two contacts in series, and the individual S WNT resistances of Rc are negligible, the SWNT resistance is 2 Rc for individual s wnt. The resistance value of the nanotube is 2 Rc/N, which is the number of individual SWNTs in the case of the formation of the nanotubes. 10, ° $ The series resistance is 2, GGG ohms, then 1 并联 parallel nano tube single fiber (N, only - nano tube non-volatile nano-species as shown in Figure 2 The material resistance 36 such as the fuse 4 shown in the vine device, or the lower solution of Fig. 3, is used for the protection of the rice tube protection device S (about 60 (0.060 pf)). The aspect of the Nai is more than the 1.5 F in Figure 1. The following is a description of the capacitors, the capacitance of the '.P capacitor is lower, and the protection device is much lower. ^^ Example, as illustrated in US patents, etc. = lowering the eve of the number. This kind of shaft guard is a pair of non-volatile nanotube protection devices, ^ two switches, the name is the national patent application number," the application is In August 2004, the patented application number of the nano-tube switch is _18,181 ^Department of manufacturing is described in the US manufacturing method", the application is 2 years 8 meters, the structure of the device and the device need A semiconductor type diode. - No: = board, such as the one + conductor base described in Figure i requires a semiconductor substrate. Therefore, non-defective protection devices are not + V body substrates and Edge (non-semi-conductive plates, and integrated with, for example, rigid and flexible substrates). Non-volatile nanotubes are further protected by components that may be component of one or more levels 201106408, for example The wafer level; and/or the substrate level; and/or the card level; and/or the board level are appended, as further described below with respect to Figure u. The non-volatile nanotube protection device may be used to protect conventional dual loads. Sub-, CMOS, SiGe, GaN, GaAs and other compound semiconductor devices and circuits. Furthermore, non-volatile nanotube protection can also be used to protect a variety of different complementary carbon nanotube logic (CCNT logic) Meter tube (without semiconductor device / circuit) logic chip, compound (10) (10) nano tube logic chip, as described in the US patent application? Tiger 1〇 / 917, 794, the name "nano tube type switching element" 'application date is 2 8August 13th; U.S. Patent Application No.8, Age, Named "Nano-tube with Multiple Controls; Related Conditions" 'Applicable for 2004 Μ 13曰; and US Special (NL〇 GIC)m, towel please ^"forwarding The logic of the carbon nanotubes is hereby incorporated by reference. E-day is the UH) day, and all of the proposed non-volatile + half ~ the cross-section 400 of Figure 4A and the figure 400 The display shows the electrode and the output electrode in the plan view above the nanotube channel element, which has a discharge under the nanotube channel member, and is described below. Further advancement - Step No. 8, (8), the name of the application for the national patent application is Lilian Ml3 / = structure and manufacturing method", ,, · by day. The operation of the device is further improved. - In the case of the US patent, please call the number 18, 〇85, the name is "= the nano tube type switching element", and the application number is 2, 4 years, August '3曰, Please note that in US Patent Application No. 1〇/918, 〇85, the name is “Nano-tube switch element with multiple 201106408 heavy control”, the date of the application is the second year of the position relative to the nanotube. The channel elements have been altered such that the input lightning/output electrode is below the nanotube channel element, *discharge electrode and pair = electricity: above the nanotube channel element. These electrodes operate on the device that affects the phase of the nanotubes and the contact zone. (10) The following = the application of the Langzhong summed up the structural characteristics of the device Qian Zuo; US Shenqing case number 10/918, 18 name "Nano tube device structure and system" 'application date is August 2004 η曰; and the US patent application 10/918,085 'name $ "Nemi-tube happy pieces with multiple controls", the application was August 13, 2004. The non-volatile nanotube protection device structure described herein* is suitable for a wide range of sizes and operating voltages. For example, assume a 13〇 technology node and the levitation length Lnt is 325 nm. The switching width is designed to ensure that a sufficient number of conductive carbon nanotubes are up to a suspension length of $ LSUSP to achieve the desired resistance value. For example, Wnt might be Fang Ga. However, the structure of the non-volatile nanotube protection device may be adjusted, for example, to a suspension length of 20 nm. Figures 4A and 4B show the transverse plane and corresponding plan view of the non-volatile tube protection device structure 4 (9). The lower portion of the NT device structure is composed of a discharge electrode (plate) 412 and counter electrodes (plates) 414 and 416 buried in the insulating layer 417. In the switching region, the discharge electrode 412 is separated from the nanotube passage member 426 by an insulating layer (film) gap region G2 of a thickness m. The electrodes 414 and 41M are separated from the nanotube channel element by a thickness D2 of the insulating layer and the gap region G1<jNT device structure 働12 201106408 ^The system is input (control) electrode (plate) 4 ιι in the switching region Transmission = (plate egg and 415. The output electrodes 413 and 415 are too much = the gap G3 is separated from the surface of the channel read 426. The input electrode 411 has a surface insulator below the thickness D3, which is connected to the nanotube channel element The surface of your 1 is separated by a gap G4. The nanotube channel element 426 is - 2 nm in thickness - compared to other conductors, insulators and gap sizes: the nanotube channel element 426 is electrically connected to the signal electrode (Ports = 22 and 424. Signal electrodes 422 and 424 are at the same voltage. ς: One of the terminals 422 or 424 is required for device operation. = % poles 413 and 415, with contacts 418 and 418 And connected to the electrodes 414 and 416 respectively. In this example, the two outputs are also electrically connected (not shown) to form a single output. The pattern is a non-volatile nanotube protection device 400. The summary of the green shoots # 2 to the wheel electrode 411 'related The discharge system 412 corresponding to the input 411 of the non-volatile tube protection device 400 and the associated insulator kneading has an associated discharge electrode 412 corresponding to the discharge electrode 412 of the non-steep $ meter protection device 400 and related The insulating material / L, the summary output electrode 413, and 415' respectively correspond to the corresponding output electrodes 413 and 415 of the non-volatile tube protection device 400; the summary = the nanotube channel element 4261 corresponds to the non-volatile The nanotubes protect the eight 400 nanotube channel elements 426; the summary signal electrodes 422, and 424, the two correspond to the signal electrodes 422 of the non-volatile nanotube protection device 400" 24, and the outline of the opposite The electrodes 414' and 416' and associated insulators 201106408 correspond to the counter electrodes 414 and 416 of the non-volatile nanotube protection device 400 and the associated insulator D2, respectively. See device structure 400 shown in Figure 4, in size The thickness of the insulators D1, D2 and D3 may range, for example, from 2 to 50 nm. The thickness of the gap regions G1, G2, G3 and G4 may range, for example, from 2 to 50 nm. See device structure 400 shown in Figure 4, for example Range is For a total suspension length lsusp of 20 to 500 nm, the length of the lengths of the segments SI, S2, S3, S4 and S5 along the nanotube channel element 426 may range, for example, from 4 to 1 〇〇 nm, as follows Referring further to the device structure 400 illustrated in Figure 4, the width WNt of the nanotube channel member 426 is dependent upon the number and spacing of SWNTs (SWNT fabric density). The SWNT fabric density varies with the number of coatings applied to the number of individual SWNTs in solution (density of SWNTs) and as a function of other factors as described in the incorporated references. In this case, it is assumed that there are 10 individual nanotubes in the region of 200 x 200 nm. Please refer to the similar device structure described below: U.S. Patent Application Serial No. 10/918,085, entitled "Nano-Tube Switching Element with Multiple Controls", filed on August 13, 2004; and U.S. Patent Application Serial No. /033,216 'The name is "Non-volatile carbon nanotube logic (NL0GIC) off-chip driver" 'Applicable for January 1st, 2nd, 5th, by using similar SWNT fabric density, pair has 15 For individual nanotube tube channel elements 426, WNT = 325 nm. Figure 4A shows the dimensions S4 and 201106408 of the non-volatile nanotube protection device 4 associated with the output electrodes 413 and 415 and the counter electrodes 414 and 416, respectively, (4). The dimensions si are related to the discharge electrode 412; the dimensions S2 and S3 are respectively II, the insulators 411 and the output electrodes 413 and 415 are separated, and the discharge electrodes 412 and the opposite are respectively Electrode ΓΠ: related to the insulator. For example, the nanotube channel element / length Lsusp = S1 + S2 + S3 + S4 + S5, and if S^S3 = S4 = S5 ' then Lsusp = 5Sl. The suspended nanotube switching length _ 糸 is limited to the length of the individual SWNTs in the nanotube channel elements so that the individual SWNTs that are conductive can span the length of the switching region LSUSP〃. For SWNTs currently available, the preferred = read is 300 to 35 〇 nm. This example is chosen to be fine, so si, nm, and ShS2 = S3, = S5 = 65. For example, for the ratio of the suspension length to the gap is approximately , the gaps (7) and G 4 are approximately 3 〇 n m. However, the scalable non-volatile nanotube protection device 4〇0 is used to use the nanotube channel member material length LSUSP, rnn, in this case, Sb=S3=S4=S5=4 nm, and the gap G2 For example, G4 is about 2 nm '. The size S1_% may be achieved by using a sidewall gap method that is independent of the special etched operating point, as described in US Patent Application No. 10/918,181, entitled "Nanotube Device Structure and Manufacturing Method", Application The date is August 13th, 2004. In operation, when the nanotube channel element 426 is in the nanotube channel element location 428 as shown in Figure 5A, the non-volatile nanotube protection device 400 illustrated in Figures 4A and 4B is activated (ON). ) state, contact with one of the insulating layers on the input voltage 11 and with the output monuments 413 and 415 15 201106408

Figure 5B shows a non-volatile nanotube protection device 400 in an active (ON) state corresponding to a non-volatile nanotube protection device 400 in a startup (〇N) state as shown in Figure 5A. Figure 5B is a modified version of 400' of the schematic of Figure 4C, wherein the outline of the nanotube channel element 426 shown in the 70-bit position 42 8 ' of the (〇N) nanotube channel corresponds to The nano-channel element 426 in the nanotube channel element location 428 is shown in Figure 5A. The nanotube tunneling element 426 in the schematic nanotube interface element location 428' shows the conductor-to-nanotube between the nanotube channel element 428 and the output electrodes 413 and 415 in Figure 5A. Schematic diagram of contact resistance Rsw. In operation, when the nanotube channel element 426 is at the position of the nanotube channel element 43 as shown in Figure 6a, the non-volatile nanotube protection device 4 shown in Figures 4A and 4B is in The non-start (〇FF) state is in contact with the insulating layer on the discharge electrode 412 and with the insulating layers on the insulated counter electrodes 414 and 416. Or 'because the nanotube channel element 426 is not in contact with the output terminals 413 and 415, the outline nanotube channel element 426 is in contact with the lower terminal (as shown) and is still inactive (OFF) )status. Fig. 6B shows a non-volatile nanotube protection device of the outline of the non-activated (OFF) state, which corresponds to the non-activated (OFF) state 1 volatile nanotube protection device shown in Fig. 6A. Figure 6β is a modified version of the outline 4〇0 in Figure 4C, in which the nanotubes in the non-activated (OFF) nanotube channel read position illuminate the display of the nanotubes 201106408 channel components: 26,: corresponding to As shown in Figure 6a, the nanotube channel element 426 is located in the nanotube channel element. At the outline of the nanotube channel element position 4, the M t outline of the nanotube channel element 426 shows a schematic representation of the disconnection insulator to the nanotube contact. Integrating the V-Nylon tube protection device into a conventional semiconductor-type semi-integral/nanotube or V-nanotube wafer design does not show most of the non-volatile protection device structures in Figures 4A and 4B. 400 may be used to provide electrostatic discharge (ESD) discharge protection to devices and circuits in electronic components. The non-volatile protective device structure may be attached to the wafer' and/or substrate, and/or card, and/or board level of the assembly, as further described below. The non-volatile nanotube protection device is activated and not activated before the leg senses voltage and current, as further explained below. The output electrode structure including output electrodes 413 and 415 and insulated counter electrodes 414 and 416 form an output node that is electrically connected to the pad to be protected by ESD. The money electrode, the discharge electrode and the input electrode are respectively connected to the ground terminal, the power supply portion and the mode selection pad. The output structure (output point) is constructed and configured so that the formation of the channel is substantially affected by the state of the output node, and the ESD induced voltage or voltage is prevented from disturbing the state of the non-volatile nanotube protection device. For example, the application number is 1 〇/917,606, and the name is “isolated structure for the deflectable nanometer country”. The application is August 13, 2004. Figure 7A shows the non-volatile nano-device 722 shown in Figures 4A and 4B, which is integrated in the wafer, substrate, card or board level integrated security component 17 201106408, connected to the pad 726 and common Conductors 730, 734 and 738. The solder 726' common conductors 730, 734, 738 are used to interconnect the other conductors. The conductors used as electrodes in the non-volatile nanotube protection device 400 can be deposited by using known conductors. The method has a thickness in the range of 5 to $ 〇〇 nm and has a well-controlled thickness, which may be for example

Ru, Ti, Cr, A, Au, Pd, Ni, W, Cu, Mo, Ag, In,

The metal of Ir, Pb, Sn is composed of other suitable metals and combinations thereof. Metal alloys such as TiAu, TiCu, TiPd, PbIn, TiW, other suitable conductors, including CNTs themselves (such as single-walled, multi-walled and/or double-walled) or conductive nitrides, oxides or tellurides (eg RuN, Ru〇, ΉΝ, TaN,

CoSix and TiSix) may be used. Other types of conductors, or semiconductors, materials can also be used. A preferred method of patterning the conductors may use well known lithographic techniques such as wet etching and reactive ion etching (RIE) with well known I-insert techniques. The output electrodes 725 and 725 of the non-volatile nanotube protection device 722 correspond to the output electrodes 413 and 415' of the non-volatile nanotube device (Fig. 4), respectively, and are connected in parallel by using the conductor 724. Contacts 745 and 745 electrically connect output electrodes 725 and 725, respectively, to their corresponding counter electrodes (not shown), which thus correspond to counter electrodes 414 and 416 shown in Figures 4A and 4B. The output electrodes 725 and 725 are connected in parallel by a conductor 724 and a contact 723 and connected to a pad (terminal) 726. If the non-volatile nanotube protection device 722 is in the ON state shown in FIG. 5, the = output electrodes 725 and 725' are connected to the nanometer corresponding to the nano-e channel element 426 in FIGS. 4A and 4B. The tube channel member 728 is in electrical contact. In the control of 201106408, the H 25 or 725 and the individual nanotubes 7 of the nanotube channel element 728 are connected, and the RSW is generally 10,000 ohms. The nanotube channel is formed by megacasting & by using multiple individual nanotubes in parallel. If the tube is in the form of a 722 722 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The scent of the scented scented volatility of the nano-segment is set to 722. The signal electrode 729 (corresponding to the two j-like) is extended, and the contact is connected to the common grounding 塾 〇 and the 〇 730. The signal electrode 729 corresponding to the signal electrode 424 is also extended to contact the common conductor 73A. Therefore, the signal electrode W and the y9, = are connected in parallel with the 797 electrode and ? 29, physically and in "a gas contact with a nanotube channel element 728 corresponding to Figure 4A and the GM channel member 426, having a contact resistance & here, for each conductor pair of individual SWNT contacts For example, 'rc~ is 1 〇, surface ohms. The non-dimensional channel element 728 shown in Fig. $ is formed by using multiple individual SWNts. If the non-volatile protection device 722 is activated (0N) In the state, the pad 726 has a conductive path to the common ground conductor 73, which reaches the common via the contact 723, the conductor 724, the output electrodes 725 and 725', the nano-channel component 728, and the conductors 729 and 729. Conductor 73A, and the device or circuit connected to pad 726 or conductor 724 will be protected from ESD induced voltage/current surges. If non-volatile nano-protector 722 is in an OFF state , there is no conductive path, so ESD protection has been removed. 19 201106408 Common conductors 734 and 738 are connected to the discharge and input electrodes of the non-volatile nanotube protection device 722 by conductors 732 and 736, respectively, and used Control device 722 Conductor 732 may be an extension of discharge electrode 740 corresponding to discharge electrode 412 shown in Figures 4A and 4B, and conductor 736 may be an extension of input electrode 742 corresponding to input electrode 411 in Figures 4A and 4B. The common conductor 734 may be a power supply connection such as Vdd. The common conductor 738 may be connected to a mode pad (or mode terminal) that determines whether the non-volatile nanotube protection device 722 is in an OPEN (OFF) state or a CLOSED ( The ON state. The ESD induced voltage applied to the pad 726 cannot affect the state of the non-volatile protection device 722 because the output electrodes 725 and 725 and the corresponding counter electrode structure are protected from design disturbances, see: U.S. Patent Application Serial No. 10/917,794, entitled "Nano-Tube Switching Element", filed on August 13, 2004, U.S. Patent Application Serial No. 1/918,085, entitled "Multi-Controlled Nanotubes" "Switching element", the towel is available on August 13th, 2014, and the US patent application number 1〇/918,181, the name is "Nano official device structure and manufacturing method", the application is 2〇 〇4 August 13 said. The pattern pad may be a separate pad or may be shared with another pad. Figure 7B is a schematic illustration of a non-volatile nanotube protection device 722 that includes a connection to the wire of the solder tab corresponding to the non-volatile nanotube protection device 722, and the connection shown in Figure 7A. The non-volatile nanotube protection device 722 of Fig. 7a corresponds to the primary nanotube protection device shown in Fig. 4A and the nonvolatile nanotechnology device 75G in the schematic form (7). The output electrode 755 electrically connected to the pair 20 201106408 to the electrode 755' shown in FIG. 7B corresponds to the electric: 25 and 725 shown in FIG. 7a and the associated counter electrode (not shown) and: The L 唬 package pole 760 corresponds to the two parallel signal electrodes 729 and η , , and the combination; the insulated input electrode 77G takes into account the insulation of the transmission = 7 2 , and the insulated discharge electrode 对应 corresponds to the insulated discharge electrode. The output electrode 755 is connected to the (four) IS: t-pad 756 by a conductor 724. The protected circuit 757 is connected to the outline of the non-volatile nanotube protection device. The heart of the 4th electrode 760 is as shown in Fig. 76 (1 1^^^, from _1* to ugly connection. The 77 connecting portion 762 is connected to the eight-way connection. P 775, the signal electrode 76 is connected to the signal electrodes 729 and 729 connected in parallel, and the connecting portion is connected to the signal electrode shown in the opposite bank 7A. The extension part, and the co-edited connection diagram 775 corresponds to the common conductor 73〇 shown in the figure. The term "conductor body section and the conductive structure shown in the Pingyu Guancai" are specifically used. ^. Connection 1^" The wiring common connector 780 shown in the schematic diagram corresponding to the conductor is connected to the insulated discharge electrode 766 by a connector ,, as defined by the non-volatile nanotube protection device 7 = The tuner system corresponds to the common conductor 734, and the connected subscriber 768 corresponds to the conductor 732. The common connector 7 = please be connected to the insulated input electrode 77, as by the non-volatile $: warranty: installed 750 The common connector 785 is shown here, and the conductor 773 is connected to the n 772 system. 201106408 FIG. 7C shows, in outline form, a non-volatile nanotube protection device 75A having an activated (ON) activated (ON) to enable the nanotube channel element 764 to be connected to the output electrode 755. And in electrical contact with the common electrode 7. If an electrostatic charge is applied to the pad 756, the non-volatile nanotube protection device 750' that initiates (〇N) conducts the electrostatic charge to the common via the nanotube channel element 764. The connection portion 775, thereby limiting the voltage induced on the pad 756, thereby protecting the circuit 757. The non-volatile nanotube protection device 750 may be applied to the common connector 775 by applying a voltage (positive or negative) The common connector 785 of 780 is activated (conducting), wherein the common connectors 775 and 780 are, for example, at a zero (ground) voltage. During operation of the protected circuit, the non-volatile nanotube protection device 750 must be inactive ( OFF) state. Figure 7D shows, in outline form, a non-activated (OFF) non-volatile nanotube protection device 750 with un-erased (OFF) ESD protection. Non-activated (OFF) non-volatile nanotube protection Loading The capacitor load cWIRE+2COUT is applied to pad 756 during wafer operation. This additional capacitance is much smaller than typical circuit capacitance, as explained further below. To calculate capacitance CWIRE, conductor 724 is required. The dimensions are used if the conductor 724 shown in Figure 7A corresponding to the summary interconnect 754 in Figure 7D is 200 nm wide and if the distance between the pad 726 and the non-volatile nanotube guard 722 is The system is 10 squares. For the purpose of capacitance calculation, the length of the conductor 724 is 2 um. The wiring capacitance is typically about 1 pF/cm or 0.1 fF/um, so Cwire is about 0.2 fF. Please note that the special term "10 squares" is usually 22 201106408 used in the electronic design of the Yu φ,, in this case, the % ^ (four) s refers to the ten squares in series, and in the wide range, this _ each side For · (10). If you calculate the capacitance c0UT, you need to correspond to the display non-垲辂阽* and not the device size. Figure 7E 4A, and the diagram of the rice tube protection device structure 400, (10) is selected as the center of the ^ ^ ^, and the gap region (7) and: Γ 7, ϊ are shown by the joint 418 in the diagram. ί f = indicates that the output electrodes 415 are electrically interconnected with the 4 ΐ 6 series, as shown by the junction 418. The individual 8 jobs have a diameter of one (10), while the SWNT fabric thickness is generally less than 2 nm. Each segment S1. and s;, the length, (also shown in Figure 4A) is 65 nm. For a non-volatile nanotube device similar to the non-volatile quaternary protection device 795, the capacitor c〇 The value of ut has been calculated in the US Provisional Patent Application No. 6〇/581, 〇74. The name is “Non-volatile Carbon Nanotube Logic (nl〇Gic) Chip Driver) “申五青日为2004年June 18. For a device manufactured with a nanotube channel element 428 having 15 individual SWNTs, C0UT is approximately 〇.〇3〇fF (or 30aF), where the nanotube fabric density system There are approximately 10 individual swNTs per 200 X 200 mm area, and 15 individual SWNTs correspond to a device width Wnt of 325 nm (shown in Figure 4B). To determine the non-volatile nanotube protection device 722 The value of C0UT is summarized as 750. The number of individual SWNTs required for electrostatic discharge (esd) protection must be calculated. Then, for 23 201106408 ^ individual SWNT devices, the capacitance c〇ut can be obtained from C〇uT-0.030 fF is calculated by scaling. In order to calculate the number of _^swnt required for ESD, you need Set the non-volatile material protection | set 75 () on the wafer or package configuration, and require the model of the ESD source, as described further below 0. Although the area array soldering can also be used, the figure shows that there is peripheral welding The wafer 800 may be a semiconductor wafer or a hybrid wafer of semiconductor and nanotube devices, or a wafer tube. Unless otherwise stated, otherwise, the term "pad" means soldering.塾 孽 孽 ^ 塾 840 840 840 840 840, may be input soldering, output pads or input / output pads. Each individual pad has a non-volatile protection device. For example, the pad 8 30 is protected by ESD representing the non-volatile nanotube protection device 810, and the pad 840 is protected by ESD representing the non-volatile nanotube protection device 820. Non-volatile nanotube protection devices 81 and 820 Corresponding to the protection device 75A shown in Fig. 7B. Each pad is connected to a non-volatile nanotube-protected device formed by using an electrode and a counter electrode as shown in Figs. 7B and 4A. 4B, so that the welding voltage can not be disturbed The operation of the electrode and the counter electrode output node is described in US Patent Application No. 10/917,794, entitled "Nano-tube Switching Element", filed on August 13, 2004; US patent Application No. 1〇/918,085 'named "Nano-tube Switching Element with Multiple Controls"' application was August 13, 2004; and US Patent Application No. 1〇/918,181, entitled "Nai Rice pipe installation structure and manufacturer 24 201106408 Act, the application date is August 13, 2004. The power supply unit and the mode pad use other structures for ESD protection, as described below.乂9 power supply pad 865 is connected to a number of on-wafer circuits (not shown) and is also connected to common connector 86 via resistors either directly or in the manner shown in Figures 8B and 8B', respectively. Corresponding to the = connector 780) of Figure 7B, it is connected to an insulated discharge panel of all non-volatile nanotube protection devices such as devices 810 and 82A. The power supply pad 865 forms a portion of the first plate of the large cDEC capacitor coupled to the ground terminal, which is part of the wafer circuit design requirements. The ground pad 855 is coupled to a plurality of on-wafer circuits (not shown) and is also coupled to a common connector 850 (corresponding to the common connector 775 of FIG. 7) to all non-volatile nanoparticles such as devices 810 and 820. Insulated nanotube channel element signal electrode of the tube protection device. The ground pad 855 is formed as part of a second plate of a large CDEC capacitor coupled to the power supply. . Mode control pads 875 are connected to common connector 870 (corresponding to common connector 785 in FIG. 7) directly or via resistors as shown in Figures 8B and 8B', respectively, which are coupled to, for example, devices 81 and 820. All of the non-volatile Euromium tubes are insulated from the input board of the 5蒦 device. The mode control pad 875 forms part of the first plate that is switched to the large CM0DE capacitor of the second board, and the second board is connected to the ground. The mode control pad 875 can also be shared with another pad (not shown) instead of using a dedicated mode control pad 875. 25 201106408 Extensive/B and 8B' show the start-up (〇N) non-volatile nano%* protection device in summary form. It contains non-volatile nanoparticles with start-up (ON) of start-up (qN) ESD protection. The tube protection device 81 (), and so that the nanotube channel element is electrically connected to the output electrodes connected to the pads 83 and 84, respectively, and is also in electrical contact with the common electrode. For example, if an electrostatic charge is applied to, for example, a solder fillet 83〇 and any solder bumps, then a non-volatile nanotube protection device 81〇 and 82〇 are activated. The tube channel element conducts electrostatic charge to the common connector 850, thereby limiting the voltage induced on the pads 830 and 840, and protecting the circuit of the (four) portion. The non-volatile nanotube protection device can be turned on (activated) by a % applied voltage (positive or negative) to a common connection H 870 with respect to the common connector and the drain, wherein the common connector 85 is 860 is like zero (ground) voltage. Non-volatile nanotube protection devices such as non-volatile nanotube protection devices 810 and 82G must be in an OFF state during operation of the side-by-side road. Figure 8C shows, in summary form, a non-initiated, non-activated (QFF) non-volatile nanotube protection device 810 having a non-initiating (〇ff) coffee protection. And 82 =. During wafer operation, the non-activated (OFF) non-volatile nanotube protection device adds capacitance 胄Cwire+2 C, (Fig. 7D) to pads such as pads 830 and 840. This extra capacitance is more advanced than the typical circuit capacitance. The non-volatile nanotube protection device may be applied with a voltage (positive or negative) to the common connectors 850 and 870. The common connector 860 is not activated (turned_〇FF), where 26 201106408 common connectors 850 and 870 are at zero (ground) voltage. Electrostatic discharge (ESD) source Figure 9A shows a human body model such as that proposed by NASA (hbm) The equivalent circuit 900 of the conventional technique (reference: http://eed.gsfc.nasa.gov/562/ESD_Purpose.htm) is used to calculate the intensity of the electrostatic discharge. The voltage VESD appears across 1〇〇. A ρp capacitor 922 is applied to terminals 91A and 920 via a 1.500 ohm resistor 925. Terminal 91 0 and 920 become in contact with the wafer pads (e.g., via pins in the package wafer). The discharge current 93 is flowing from the circuit 9〇〇 provided by NASA HBM as shown in Figure 9B. The discharge current 930 is at 1〇. The peak current of ns reaching 1 ampere drops to 〇5 amps at 115 ns, then drops to 0.37 amps (37% peak current value) after 180 ns, and then discharges to zero current. The discharge must be processed based on the NASA ESD model. Non-volatile Nanotube Protection Device Features of Currents Figures 8B and 8B' show a schematic diagram of a wafer 8〇〇 in which, for example, a non-volatile nanotube protection device is activated, 81〇, and a start of 82〇ι The volatile nanotube protection device is in a 〇N (activated) state, which corresponds to the activated non-volatile nanotube protection device 75A in Figure 7C. In this example, by the fire pad 756 The voltage induced by the ESD and applied to the protected circuit 757 is assumed to be limited to a maximum allowable voltage by the non-volatile nanotube protection device to 5 volts. The ESd current path is from the pads 756, 27 201106408 via Conductor (wiring) 754, via input The electrode 755 reaches the common conductor via the nanotube channel member 764 and via the conductor (wiring) 762. The path resistance of the individual SWNT is mainly the conductor to the contact resistance ~/2 in series to the SWNT contact electric gRsw/2 It is because the resistance of other contacts is small (such as t ohms), and the resistance of the individual § and the contact resistance between the conductor and the SWNT are also small compared with & The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ESD pulses can be applied to the wafer in a variety of ways. For example, dry pad pads, pads to grounds, and other ways as described further below. Since the current flows through the two activated non-volatile nanotube protection devices, such as the series-connected protection device 810, and 82〇, the ESD-induced voltage is applied to the ESD pulse waves in the two solder bumps (譬Fig. 8b) This is produced between the pads 830 and 840) shown schematically in 8B'. Therefore, the total resistance between the soldering 830 and 840 is 2 X (Rsw / 2 + R / 2) / N or (Rsw + Rc) / N ' as shown in Figure 1A equivalent circuit 1 The total resistance between the pads 830 or 840 to the common connector 850 is, for example, (Rsw/2+Rc/2)/N. Since the common connector 850 is connected to a large capacitor Cdec that can convert the ESD current flow, the maximum inductive pad voltage may be less than the estimated maximum voltage. The equivalent circuit 1000 shown in Figure 10A corresponds to an ESD Electrostatic Discharge (ESD) equivalent circuit source 900 that is applied between two solder pads (weld pads) as described further above. The outputs 910 and 920 of the ESD equivalent circuit source 900 are connected to the pad 830 and the pad 840, respectively, as shown in Fig. 8B, and the fish 1 is outlined. /, the number of individual SWNTs required for the nanotube tube channel element 764 in Figure 7C (corresponding to the activated non-volatile nanotube protection device 810 of Figure 8B, and the nanotube channel element of 820) N depends on the conductor < contact resistance Rsw and the manner in which the ESD voltage is applied. Requirement: The number of ESD inductive pads to the pad plus voltage limit to the number N of individual volts is a function of the contact resistances Rsw and Rc, as further explained below. The maximum soldering voltage is I (Rsw+Rc)/N=5 volts, and the discharge current is 93 〇 (Fig. 9B). The maximum ΙΜΑχ = 1 amp. The conductors of individual SWNTs are in contact with the nanotubes and are Rsw. The number of individual SWNTs parallel to Rc' is Ν and the maximum allowable voltage is 5 volts. The value of (Rsw+Rc)/N is adjusted to 5 ohms, and 俾 can be IMAX = 1 amp, and the ESD induced voltage does not exceed 5 volts. For example, 'If Rsw=Rc=l〇, 〇〇〇 ohm, then (8) individual SWNTs; if Rsw=Rc=2〇, 〇〇〇 ohm, then N==8 _ individual SWNTs; and if rsw= Rc = 3 〇, 〇〇〇 ohm, then N = 12,000 individual SWNTs. About the technical node of the 13-face and the nanotube density of 10 individual nanotubes in the area of 200 x 200 mm, for 15 individual SWNTs and g, the nanotube channel element width um; for 4,000 individual SWNTs , Wnt=87 um ; and ' WNT=i74 um for 8,000 individual SWNTs. The non-volatile nanotube protection device is a relatively large device that is placed adjacent to the pad and over a circuit such as an off-chip driver (OCD). 29 201106408 For some applications, the ESD induced voltage of '5 volts may be too high. By using a larger density of nanotube fabric, it is possible to reduce the ESD induced voltage to less than 1 volt', which uses almost the same size of the device. A density of 5X nanotube fabric of approximately 1 x 2 x 2 〇〇 nrn area in the area of 2 〇〇 X 2 〇〇 nrn has been stored and may be used. For example, a non-volatile nanotube protection device has approximately Wnt = 1 〇〇 um and 1 〇, 〇〇〇 ohms of rsw and Rc, and N = 25 at 5 χ density, and an individual SWNT ' This results in a maximum ESD induced voltage of 0.8 volts. This estimated ESD induced voltage is made by using the equivalent circuit 1〇〇〇 in Figure 1A, where the ESD induced current 93〇 (Fig. 9B) of ιΜΑΧ=1 amp is activated via two series connections. The non-volatile nanotube protection device resistor has a resistance of (Rsw + Rc) / N = 20,000 / 25,000 = 0.8 ohm for a maximum ESD induced voltage of 0.8 volts. Although the maximum ESD induced voltage of 5 volts is used at the maximum ESD induced current of 1 amp, which is used in the description of the equivalent circuit performance of Figures 8 and 10, we should understand that it is possible to choose an alternative higher Density nanotube fabric to limit the maximum ESD induced voltage to 〇8 volts. Alternatively, a 5X wide non-volatile nanotube protection device can be used for lower nanotube fabric densities to achieve a maximum ESD induced voltage of 0.8 volts. Alternatively, the 5X nanotube fabric density may be used to reduce the size of the non-volatile nanotube protection device, with the largest ESD induced voltage protection maintained at 5 volts. If a 5X nanotube fabric density is used, it is possible to use the above 4, the individual WNT width Wnt = 87 umi device to a width of 18 um, which also has 4, individual SWNTs. 201106408 Figure 10B does not correspond to the equivalent circuit 1〇1〇 corresponds to the equivalent circuit, 900 output terminals 91〇 and 92〇, which are connected to the pad and grounding 塾855 to generate a discharge current l 93〇. The discharge current (4) flows through the non-volatile nanotube protection 81 () which is activated by the resistance (Rsw/2+Rc/2)/N between the 烊塾(4) and the common conductor 850, and It is connected to the grounding 855, as shown in Figure 8B. The maximum ESD induced voltage of the pad 83 相对 relative to the ground pad 855 is 2.5 volts, and the pad of the equivalent circuit 1000 is one-half the maximum voltage of the pad. The equivalent circuit 1020 shown in FIG. 1A corresponds to the output terminals 910 and 920 of the ESD equivalent circuit source, which is connected to the mode pad 875 and the ground pad 855' to generate the discharge current 93 shown in FIG. 9B.放电, and the discharge current 930 flows through a common connection of $87 〇, which is connected to the insulated wheel-in terminal of the activated non-volatile nanotube protection device, as represented by the diagram, representative of the protection device 81〇 , with the 82Gi shown. In order to limit the ESD induced voltage reserve on the common connector, several methods may be used. In the first method, a capacitor-only method is used, in which a capacitor is added between the mode pad 875 and the ground pad 855, as shown in FIGS. 8B and 10C, which does not have a series resistance (in the figure). In the second method, the series resistance iron is attached between the mode pad 875 and the common connector 87A, and the parallel capacitor is attached to the common connector 870 and the ground pad 855. Between, as shown in Figure 8B· and Figure i〇c.

In the first method of adding the shunt capacitor Cm〇de to the mode pad 875 and the grounding section 855 as shown in FIG. 8B, it is necessary to limit the ESD 31 201106408 voltage reserve to a 5 volt cmode capacitor. as follows. The well-known current-voltage relationship for capacitor I=CAVMT may be re-stated as Cmode=ImaxATMV, where iMAX=l amperes is the maximum value of ESD current 93〇 shown in Figure 9B, and δτ=ι 〇(10) is the arrival The maximum current value is 1max rise time, and Δν = 5 volts is the maximum allowable ESD induced voltage on the common conductor. The size required for cm〇de is 2'000 pF, which is the capacitance value that may be applied to the wafer 8 , as shown in Figure 8B. In the second method of adding a series resistor rmode between the mode pad 875 and the common connection benefit 870 and increasing the capacitor Cm〇de between the common connector " and the ground pad 855, as shown in FIG. The equivalent circuit in c = 20 and FIG. 8B, the values of '1^ sinking and cm〇de2 shown may be determined as follows. The series resistance rmode reduces the maximum value of the discharge current 930 Ϊμαχ. If RM0DE is 15, 〇〇〇 ohm', for example, Imax is reduced by about 10X. For the maximum ESD induced voltage of 5 volts between the common connector 87A and the ground pad 855, when used with the series resistor rm〇de shown in Fig. 8β, the capacitor shown in Fig. 8b

Cmode=2, 〇〇〇 pF may be reduced by approximately 1〇χ to cm〇de=2〇〇 pF. The equivalent circuit 1030 shown in FIG. 10D corresponds to the output terminals 910 and 920 of the ESD equivalent circuit source 9A, which are connected to the power supply pad 865 and the ground pad 855, thereby generating the discharge shown in FIG. 9B. Current 930, and discharge current 930 flows through a common connector 860 that is connected to the insulated input terminal of the activated non-volatile nanotube protection device, as represented by the representative protection device 81 shown in FIG. 32 201106408 8B, 82〇, what is shown. In order to limit the ESD induced voltage reserve on the common connector 860, several methods may be used. In the first - the towel, only the capacitor H green ❹ between the power supply pad 865 and the ground pad 855 between the power supply (required for circuit operation) power supply to the ground release capacitor Cdec, as shown in Figure 8b In Fig. 1D, it does not have a series resistance (Rps = 于 in Fig. 10D). In the second method, the series resistor Rps is added between the power supply pad 865 and the common connector 86G, and the parallel capacitor $Cps is added between the common connection 860 and the ground pad 855, as shown in the figure. Criminal, with Figure (10). In the first method, it is possible to use the solution (C) capacity n CDEC existing between the power supply portion and the ground as shown in FIG. 8B, and make it appear as $

Figure 10D of nrm〇DtRps=0), and no open circuit in _capacitor PS) is added. It is necessary to set the value of ESD = _ to 5 volts to the chip. = The small unwinding capacitor is usually used in the wafer, so no additional capacitance is required.塾86==Γ 'The series resistance Rps is added between the power supply parts' and the capacitor Cps is added between the total connection _ and the grounding (4) 5, as shown by the diagram _ disk diagram, in the circuit Shown in 1030. The maximum value of the series resistance electric current 930. If R hurts 1<: ΛΛ 夕 max 士 士 PS PS, _ ohm, for example, about 1GX. For the maximum ESD induced voltage of 5 volts between the common connector and the pad, 33 201106408 cPS is estimated to be CPS = 200 pF by using the same method used to estimate Cmode for Figure 10c. . Since the CDEC appears between the power supply pad 865 and the ground pad 855 (circuit design requirements), the maximum ESD induced voltage will be less than 5 volts. The equivalent circuit 1〇4 shown in Fig. 10E corresponds to the output terminals 910 and 920 of the esd equivalent circuit source 900, which are connected to the mode pad 875 and the pad 830 to generate a discharge current 930. The discharge current 930 flows through Rmode (here, Rm〇de = 15,000 ohms) and reduces the maximum current by 10X to 0.1 liters, as described with respect to the equivalent circuit 1〇2〇 in Figure 〇C. CMODE = 200 pF, as explained in relation to the equivalent circuit 1〇2〇 in Figure i〇c. The activated (ON) non-volatile nanotube protection device 81 has a resistance (Rsw/2+Rc/2)/N=2.5 ohms and has a reduced maximum current of 〇·ι amps, and traverses the resistance. The maximum voltage drop is negligible at 〇25 volts to maintain the ground pad 855 at almost zero volts. Therefore, the maximum ESD induced voltage on the common connector 870 causes the ESD induced voltage demand to meet the maximum value of 5 volts, which is the same as that calculated for the equivalent circuit 1〇2〇 of Figure 1〇c. The equivalent circuit 1050 shown in Fig. 10F corresponds to the output terminals 910 and 920 of the ESD equivalent circuit source 900, which are connected to the power supply pad 865 and the pad 830, thereby generating a discharge current 930. The discharge current 93 〇 flows through Rps (here, RPS = 15,000 ohms) and reduces the maximum current by 10X to 0.1 pp, as explained in relation to the equivalent circuit 1〇3〇 in Figure 〇D. CPS = 200 pF ' as explained with respect to the equivalent circuit 1〇3〇 in Fig. i〇D. The activated (ON) non-volatile nanotube protection device has 81 〇, with 34 201106408 resistance (Rsw / 2 + Rc / 2) / N - 2 · 5 I m ' and has a maximum current of ο ampere reduction, The maximum voltage drop across the resistor is negligible at 0,25 volts to maintain the ground pad 855 at almost zero volts. Therefore, the maximum ESD induced voltage on the common connector 860 causes the ESD induced voltage demand to meet the maximum value of 5 volts, which is the same as the equivalent circuit 1〇3〇 of Figure i〇D. Typically, at least 2,000 pF of the decoupling capacitor Cdec* load discharge current 930 is partially remote from the common connector 86A such that the ESD induced maximum voltage of the common connector 860 is reduced below 5 volts. Again, the power supply pad 865 relative to the ground pad 855 is less than 5 volts pad to ground maximum voltage as illustrated with respect to the equivalent circuit 1030 of Figures 1A. The equivalent circuit 1 〇 6 所示 shown in Fig. 10G corresponds to the output terminals 910 and 920 of the ESD equivalent circuit source 900, which are connected to the mode pad 875 and the power supply pad 865 to generate a discharge current 93 。. The discharge current 93〇 flows through the resistor Rmode=15,000 ohms and Rps=i5,000 ohms, so that the maximum current flow is reduced by 20X, from 1 amp to ampere ampere, and the pattern 塾875 and the power supply part are soldered 865 The ESD induced voltage between them does not exceed 5 volts. Since cDEC connects ground pad 855 to power pad 865 and provides an additional current flow path, the maximum ESD induced voltage will be less than 5 volts. Non-volatile nanotube protection device capacitors during wafer operation During non-volatile nanotube protection, the non-volatile nanotube protection is not activated, as shown by the non-activated non-volatile nanotubes in Figure 8C. Device 35 is shown on 201106408 810 and 820". The non-activated nanotube protection device corresponds to the non-activated non-volatile nanotube protection device 750" schematically shown in Figure 7D, and the corresponding non-activated (〇FF) non-volatile display in cross section in Figure 7E. Nanotube protection device 795. The value of the non-volatile nanotube device tantalum capacitor c〇UT similar to the non-volatile nanotube protection device 795 can be illustrated in US Provisional Patent Application No. 6/581, 〇74 (Similar devices in the name "NVOC Out-of-Chip Drivers", June 18, 2004), for nanotube channels with 15 individual SWNTs For a device fabricated with a nanotube channel element 426 (Figs. 4A and B) in component position 43 (Fig. 6A), the COUT is approximately 0..030 fF (or 30 aF), and the density of the nanotube fabric is There are approximately 10 individual SWNTs per 200 x 200 mm area. The number N of individual SWNTs required for ESD protection as further explained above has been determined. Thus it is possible to scale non-activated non-volatile nanotube protection.

Device capacitance value. If N=4,000 individual SWNTs, then 2CWT=16 fF (2 x 0.030 x 4000/15); if N=8,000 individual swnts, then 2C〇ut=32 fF; and if N=12,000 individual SWNTs, then 2C 〇ut=48 fi^CwiRE is further estimated to be 0.2 fF as above, which is negligible compared to the value of 2c〇UT. Non-volatile nanotube protection devices add less than 50 fF to the capacitive load of the circuits they protect. In contrast, conventional protective diodes may increase by 1.5 pF, or 1,500 fF, as described in U.S. Patent 6,141,245 to Bertin et al. The non-volatile nanotube protection device does not use a semiconductor diode (or transistor) and may therefore be placed on any of the electronic components, such as wafers, wafer carriers, cards or boards. Several non-volatile nanotube protection devices may be used in parallel on one input of an electronic component, because they increase the ESD protection of the electronic components because they increase the capacitance of the conventional protection device. Integrating the V-Nei tube forwarding Nerima device into various layers of the e-plants The non-volatile carbon nanotube protection device 722 shown in Figure 7A can be placed at any level of the assembly, such as a wafer, module , card or board level substrate. Fig. 11 shows a simplified cross-section of a semiconductor wafer 1 having a conventional protective substrate (PD) 11G2 in a semiconductor substrate UG1. The protective device 11G2 corresponds to the protection shown in Fig. 1. The compliant device 1102 is mounted by conductive in the insulator 11 〇 4; and is connected to the solder 〇 6 ′ on the surface of the semiconductor substrate 导体 ΐ 导体 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 It is possible that the lightning protection type diffusion portion 1107 forms the protected ι1 〇8, - °p77 as schematically shown in Fig. 1. The diffusion portion η 〇 7 can be connected to the protection device 1102 by the conductor 1105 by a conductive embedded layer contact. Pad 1106 can be placed in an array around the target or possibly in the area on the semiconductor wafer 11A. The connection between the pad 1106 and the other layers of the component is directly connected to the pad 11 〇 6 (not shown) or the pad 塾 U 〇 6 and the wire 隆 ι 〇 9 ( For example, as a flux solder, as shown in Figure 11Α, (KGt) is in the reference C. Bertin et al., "Known Qualified Chips", 4 in the middle of the morning, which belongs to Kluwer Academic, 2001, 2011. Puttlitv r> π , t , 匕 and P. T〇tta edited the reference book "Regional Array Interconnects to the South" on pages 149-151. Simplified depiction of the B-11 surface of the Bethes semiconductor (or hybrid semiconductor/nanotube) wafer. This non-volatile nanotube protection device FQnf ^ is applied to the semiconductor wafer 1UG for an additional half of the diffusion portion U°7. In the industry, semiconductor wafers are well known in the industry. For example, the conductor/nanotube wafer example may be found in the following U.S. Patent "2: U.S. Patent Application Serial No. 11/033,089, entitled "Hybrid Carbon Nanotube" Logic (NLOGIC) and CMOS inverters", 1 1/033 2η > ^ 10 曰; and the US patent application f tiger is called "combined NLOGIC and CMOS dual-track non-receiver circuit" The application was filed on June 10, 2005, and both were included for reference. The non-volatile nanotube protection device Ul2 (iv) d nm conductor 1 is connected to the town layer contact 1108 and connected to the second electrode and connected to the pad 1117 by the conductor 1115. In ^ , the connection between other levels of the component, # may be lined with =, 1117 (not shown) or welded as shown in Figure (4). Device 1U4 is a white technology protection device (PD), similar to PD10 in Figure i. Figure UC shows a simplified depiction of a semiconductor (or hybrid semi-conductor 1120 in which the conventional technique is placed: to protect the diffuser 11 () 7, the ( (4) / 4 device 1G no longer use the hair tube _ t m7__ non-Zang Zhibao 5 Chu to avoid the influence of ESD. State 38 201106408 Volatile Nanotube Protection Device 1122 Intrusive (10) ( (10) 1 1 ί Inlaid into the layer 1108 and connected to the diffusion ^ 1124 and connected To the solder pad 1126. In the solder 塾 ' '牛; =, 2:: = r "directly connected to the solder two lie as shown. ^ ridge 1128 (such as spot solder), as shown, 11D shows only · nano tube The cross section of the wafer (4) is depicted on the insulating substrate 1131, and the memory substrate 1131 may be ceramic, ceramic or organic. The only-tube device and An example of a function may be found in the following U.S. Patent Application: U.S. Patent Application Serial No. 17,794, entitled "Nano-Tube Switching Element", filed on August 13, 2004; US Patent Application No. 10/918,085, entitled "Nano-tube Switching Components with Multiple Controls"' application date is August 13, 2004 U.S. Patent Application Serial No. 11/33,215, entitled "Non-volatile Carbon Nanotube Logic (NL〇GIC) Receiver Circuit," filed January 10, 2005; and U.S. Patent Application Serial No. 11/ 033,216, entitled "NVOIC Out-of-Chip Driver", applied for the month of January 2005. Since the insulator substrate 1131 is not a semiconductor substrate, it is not possible to use a conventional protective device such as the device 1 of Fig. 1 which requires a semiconductor type diode. Instead, the required protection means does not require a diode, such as a non-volatile nanotube protection device 1133 corresponding to the protection device 722 shown in Figure 7A. Non-volatile nanotube protection device 39 201106408 1133 is connected to the mattress 1136 by a conductor 1135. Non-volatile protection device 1133 is also coupled to the nanotube device and circuitry (not shown) to provide esd protection, as further described below. Figure 11E shows a cross section of wafer carrier 1140 in which one or more wafers may be physically and electrically bonded to wafer carrier 114A. Substrate 1141 includes surface conductors such as 1143, 1144, and 1146, and internal wiring (not shown) fills the via holes 1145 of the conductors, connecting the conductors on one side to those on the other side. The non-volatile nanotube protection device 1142 corresponds to the nanotube protection device 722 shown in Figure 7A and is coupled to the pad 1144 by a conductor 1143. The non-volatile nanotube protection device 1142 protects the wafer carrier 114 from ESD damage during processing and also provides additional protection to the wafer containing the sx to wafer carrier 1140. Pad 1144 is connected to terminal pad 1146 by a via hole 1145 filled with a conductor. Conductive bumps 1147 are connected to terminal pads 1146 and to conductors (not shown) on another level of the assembly. The guides used at the wafer level and the wafer carrier level can be used in the following paragraphs: Chapter 4 of the "Knowledge Qualified Chips (KGD)" by C. Bertin et al., which belongs to 2001. Kluwer Academic Press, κ. Puttlitz and p

Totta edited the reference book "Regional Array Interconnect Guide" on page i62_i65. Figure UF shows the semiconductor wafer n〇〇 shown in Figure 11A and the flip chip mounted to wafer carrier 1140 shown in Figure nE to form electronic component 1150. In addition to the chip package function, the electronic component "% has passed the non-volatile nanotube protection device 1142 in the wafer carrier 1140 via 201106408 from the conductor 1143, the pad 1144, the conductive bump 1109, the solder 11 〇 6, the conductor Connected to the diffusion portion 11G7 with the junction 1 (10) to increase the diffusion of the semiconductor wafer 11GG. This external ESD can be combined with the semiconductor wafer (1) in Figure UB, which will be non-volatile nano The tube protection device 1112 is attached to the semiconductor leopard: the protection device of the conventional device can be attached with sufficient additional capacitive load to limit the performance of the wafer. If the coffee protection can be achieved by other hand wires, the device The sub-assembly _' contains the semiconductor wafer 2 in which the de-protection of the diffusion portion 11 〇 7 is achieved by using the low-capacity non-volatile nanotube protection device 2 of the lower parent in the second 40. The protection device UG2 replaces the electron-to-electronic component 1150 with a lower solder bump "+ conductor wafer 1161" because the wafer protection is eliminated. In the installation to 曰 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The Nerve Tube Protection is provided by Nongfang 1142. The nano-f protection device 1142 is connected to the inspection unit by a conductor 1143, a pad 1144, a conductive bump 1162, a pad 1163, a conductor 1165, and a town level layer 1167. The electronic components 1160 ... and the other levels of connections of the components are as described with respect to electronic component U5Q. 201106408 FIG. 11H shows an electronic component 117A comprising a wafer-only wafer H71 and a wafer carrier 1140, wherein the ESD protection of the nanotube device and circuit (not shown) connected to the pad 1166 is performed by using a wafer. The lower capacitance non-volatile nanotube protection device ι 68 in the carrier 1140 is implemented. The only-nanotube wafer 1171 is similar to the only-tube wafer 1130 shown in Figure UD, except that the non-volatile nanotube protection device 1133 has been eliminated from the conductor η%. A special esd processing alert is required when processing the V-Nano wafer 1171 prior to installation to the wafer carrier 114. The protection of the nanotube device and circuit (not shown) connected to the mattress 1166 is provided by the non-volatile nanotube protection device 1168 on Form 1H0. The nanotube protection device 1168 is connected to the pad 1166 by a conductor m3, a pad 1144 and a conductive bump 1172. The electronic components", and other levels of connection of the components, are as described with respect to the electronic component 115. A non-volatile nanotube protection device may be used in a more sturdy, and more hierarchical than the wafer carrier, for example Cards and boards. Card-level electronic components 118〇 generally include Tao Jing or organic substrates, pads to attach components (not shown), wiring and terminals. Figure (1) shows the non-volatile nanotube protection device A plan view of the card level electronic component 118G is shown and a cross section is shown in Fig. 111. The terminal 1182 on the card substrate 1181 is used to connect to the under-level of the component and is exposed to ESD during processing. Non-volatile nanotubes The protection device 1184 is pegically protected from ESD by the conductor 1183 being connected to the terminal 1182. The non-volatile nanotube protection device 1184 corresponds to the non-volatile nanotube protection device 42 in Fig. 7A 201106408 722 Fig. 11J shows a board level electric j190 'consisting of ceramic or organic matter, which is counted to support 8 days and direct mounting of the connector: the card-drawing substrate' as further described below. 4 bis ^ nin, who's "known good wafers (KGD)" of = ^ 2001 ^ Kluwer Academic, κ Putting;. The first postal ⑽ 〇ttaj4 series of reference books "area array interconnect Guide" of. The connector 1192 93 mounted on the board base 1191 (which is connected to the pluggable card level electronic component 118) is exposed to the coffee during processing. Also, the borrower (4): rr film 1196 contact Weld 119 a =. In order to increase the protection from the effects of ESD, the non-volatile helium device 1195 is connected by a conductor 1194, and the water-protected non-volatile nanotube protection device (4): contacts the solder pad 1198. Non-volatile nanotube protection in the non-volatile nanotubes weiwei ii95 f... The cymbal U96 may be a hybrid semiconductor wafer BS such as a semiconductor wafer conductor/nanotube wafer (10), or for example 'Nano tube wafer measurement only - nano tube properties = Figure 7A shows the non-swing possible use of two snow: non-volatile nanotube protection device,

"Body level, layer and: two == J 43 201106408 one or multiple wafers. Figure shows a non-volatile nanotube protection device that does not start. It has 8B, showing the chip in the ESD protection state, such as V The non-volatile nanotube protection device in the non-(:) state is movable non-volatile nanotube protection device _ with 82 (V. crystal package from the electric device before the removal by the device, or In the wafer or the sealed state, it is in ESD protection mode by a system before starting and removing: one or several hairpins J may be connected to the common connector 85G in the electronic component. The connection details are shown in In Fig. 7C, the power supply pad 865 and the mode pad 8 are protected by a triple capacitor, or a resistor and a parallel capacitor, as shown in Figure 8B. For calculation of various pads and power supply parts. The equivalent circuit of the ESD voltage for solder pads, mode pads and grounding is shown in Figure 1. Please note that 'mode pads may be shared with other pads (not shown). Some wafers are manufactured. During the process, it is lost due to ESD induced voltage and current stress. Figure 12 shows A method 1200 showing the use of a non-volatile nanotube protection device during manufacturing to reduce ESD-related settling (FALLOUT) during processing. Preferred method step 1210 is to fabricate multiple wafers on a common substrate. For example, ' The common substrate may be a ceramic, ceramic or organic material. The semiconductor wafer is fabricated by using known semiconductor technology, and includes a protective device known in Japanese Patent No. 44 201106408, which includes a semiconductor diode. ESD protection of the semiconductor wafer can be Adding a non-volatile nanotube protection device to one or more levels of the electronic component as shown in Figure 11 without increasing the overall capacitive load, since the nanotube protection device has less than 1/10 The capacitance of the conventional protection device is further described above. The only-nanotube logic function is manufactured as described in U.S. Patent Application Serial No. 10/918,181. Receiver and output driver circuits in U.S. Patent Application Serial No. 11/033,215, and U.S. Patent Application Serial No. 11/033,216 To the pad and protected from ESD voltage by using a activated non-volatile nanotube protection device. For example, since the only-nanotube function may be formed on an insulating substrate, conventional protection The device is not available and may replace the use of a non-volatile nanotube protection device that does not require a semiconductor diode. Hybrid wafers with hybrid semiconductor and nanotube functions can also be protected with non-volatile nanotubes. The non-volatile nanotube protection device has a much lower capacitance (less than 1/10) than the conventional protection device and is suitable for high-speed operation of the circuit, and this capacitive load is a problem. Method step 1220 uses a tester to initiate ESD protection of the non-volatile nanotube protection device by switching the protection device to a startup (Ο N) state, as shown in Figures 8B, 8B' and 7C, while the wafer is still located, for example, in the crystal On a common carrier such as a circle or a substrate. Non-volatile nanotube protection devices may be activated in the following manner. Included with ground pad, power supply 45 201106408 All pads of the pad and mode pad are grounded. The mode pad is ramped up or pulsed (possibly using one or more pulses) to, for example, the power supply unit vDD, positive voltage. All non-volatile nanotube protection devices are in the g (ON) state as shown in Figures 8B and 8B. The non-volatile nanotube support device is not used between the mode material and the ground material, as shown in Table 2 Figures 8B and 8B'. Instead, the current flow can be minimized by a combination of shunt capacitors and series resistors, as shown in Figure 8. , SB's six-person ^ Ί Ί 叼 叼 〇 〇 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 123 The secret method step (10) is to fabricate the wafer on the lower-level package by the conventional interconnect method. Reverse deep hand The method step 125° of the seal is used. Ten loaded scorpion women's clothing on the tester for the final module (seal wafer) test protection method (four) 126G money _ hairy nano tube capture start 1 sudden to make the _ hairy tube is not set 'As shown in Figure 13 and further steps are explained below. Only the test is not tested and then the 'best method step (4) is performed for the package W. The preferred method step 128 is to use a good package (by the final test, the method 1220 is placed against the protection device ESD). ;^装==„The tube is made of a pulse wave, 46 201106408 several pulse waves or most pulse waves to start the protection device. The test field can test the signal = to the grounding path Lx to confirm the installation of the device (〇n) 'The sequence of activations is repeated as needed until all protection devices are activated. - Next, the preferred method step 1290 carries the ESD protection device to the consumer by using known industrial practices. The member shows that in the system, the activated non-volatile nanotubes are used to protect the f(4) bare or domain crystals to reduce the ESD-related FALL〇UT during the installation of the components in the system. The system is not activated by the system after installation. The method step 1310 of the method is to protect the wafer in the OFF state of the system. The two t +, the security is set by using the preferred method step 1320 k or the option 2 without being activated, to Allow system operation. Ray option ^ then - better method steps to remove the grounding, power supply and mode voltage to the disaster 5 ν 令 volt. The power supply voltage VPS is from 0 ^ ^ ^ hair tube protection device from Start (ON) Switch to non-start (OFF), and the protection will be removed. = 'Better method step 135 〇 start system operation. Item 2, _ surface method step (10) will be electric volt, mode power plant The ceramic-like volatile nanotube protection device is kept at the start (ON). Secondly, the power supply is powered by the system. The V pressure of the Et system is raised from Vdd to Q, so that the non-volatile nanotubes can be made. Bao 47 201106408 Protection device switches from ON (ON) to OFF (OFF) state. Secondly, the preferred method step 1350 begins system operation. Figure 14 shows the use of non-volatile nanoparticles in the system's ESD-protected packaged wafer. The tube protection device, method 1400 for reducing ESD-related FALLOUT during removal of components from the system. The preferred method step 141 is to suspend system operation (to put the system in an OFF state). 'Next, the preferred method steps丨4 2 启动 Start E s D for the selected wafer 5. That is, the selected wafer will change from an operational state to an ESD-protected non-operational state during system operation for removal from the system and subsequent processing. Alternatively, the wafer may be switched to a non-operational protection state. To protect the wafer from radiation field, system operation problems, etc., and stay in one of the system for a period of time, then, when the system operation restarts, 'return to the operating state. ESD protection system in Vm〇de When =0, it is activated, and the power supply voltage vPS rises from Vdd to zero. Secondly, Vm〇de rises from 0 to VDD, and the non-volatile nanotube protection device switches from non-start (OFF) to start ( ON) status. VM0DE then rises from Vdd to zero, while the chip (or electronic component) remains protected by ESD. Note that non-volatile nanotube protection devices may be integrated into the chip design (not shown) to protect particularly sensitive internal circuitry. These non-volatile nanotube protection devices are activated and not activated by the use of internal circuitry (not shown) that implements methods 1200, 1300 and 14. Next, a preferred method step 1430 removes the protected wafer or electronic component from the system. 48 201106408 Only-nanotube volatile nanotube protection device Volatile nanotube protection farm is usually in the 〇ff position. A non-volatile nanotube protection device that is activated before the ESD senses voltage and current or is turned-off, in the case of electronic components such as the handling of volatile nanotube protection I It is 〇ff and is only activated if connected to an ESD source (such as the ESD equivalent circuit source 900 in Figure 9). The volatile nano-f protection device keeps the ESD-induced voltage during the period, prevents the coffee-induced voltage from exceeding a predetermined value (for example, 5 volts), and then returns to their normal 〇ff (normally closed) state. The electrical characteristics of both the non-volatile and volatile nanotube protective devices are controlled by the geometry of the device, as shown in Figures 4a and 4B. However, since the ratio of the length of the nanotube channel element suspension (LSUSP) to the gap for the non-volatile operation is approximately 10/1 (as shown in Figure 7E), the suspension length of the nanotube device with respect to the volatile operation is The ratio of gaps is approximately 5/1 of the volatile nanotube protection device structure 1595 (as shown in Figure 15A). The ratio of the suspension length to the gap of the 5/1 nanotube channel element is 'from the gap between the nanotube inlet channel element and the insulation input (and the insulation discharge) electrode gap from the non-volatile nanotube protection device shown in FIG. 7E 795 of 25 nrn is increased to 5 〇 nm of the nanotube channel element to the insulation input (with insulation discharge) electrode gap (distance between Figure 15A) to achieve. The signal electrodes 1522 and 1524 shown in Fig. 15A correspond to the signal electrodes 422 and 424 shown in Figs. 4A, 4B and 7E, respectively; the input electrode 1511 corresponds to the input electrode 411; and the discharge electrode 1512 corresponds to the discharge electrode 4U; 201106408 output electrodes 1513 and 1515 correspond to output electrodes 413 and 4i5, respectively, and counter electrodes 1514 and 1516 correspond to counter electrodes '4i4 and 416, respectively. The nanotube channel element 1526 corresponds to the nanotube channel element 426. The nanotube channel element 1526 is in electrical contact with the signal electrodes 1522 and 1524 and corresponds to the nanotube channel element 426 in electrical contact with the signal electrodes 422 and 424. The output electrode 1513 is connected to the counter electrode as schematically shown by the connection portion iWO; the output electrode counter electrode 1516 is connected to the volatile operation by the connection system, and the heart (four)/summary is not shown. Further, for 1522 and 1524, it is schematically connected by the connection A electric "12 series to the signal electrode channel member 1526 and &" to make it in the nanometer. The voltage between the Wei-Qin tube device and the electrode 1512 is zero volt case number 11/033, 215. The characterization of the device is described in the US patent application (NLQGIC). The receiver name is "non-volatile carbon nanotubes." The logic is all included for reference.", the application date is January 10, 2005, and the volatile nanotubes have been omitted from the discharge of the battery. The 1595X system is shown in Figure 15B. the same. The nanotube channel element discharge electrode 1512 in Fig. 15A is in the operation of Fig. 15B and Fig. 15 8 1526 and the discharge electrode operation except for the Fig. 15B geometry. The voltage difference between the two is zero, so the electrical structure of the 1595X may be omitted: one will understand the volatile nanotube protection device 1595. Similar systems may be used to replace the volatile nanotubes to maintain volatility operation. The name of the only-nanotube device that does not have a discharge gate is "Nemitubes in US Patent Application No. 1〇/ In 917,794, the switching element "application" was August 2004. 13 50 201106408 = Only the versatile tube-type nano tube protection device is integrated in the conventional semi-conductor _, hybrid semiconductor / nanotube or Wei - nano The majority of the non-volatile=濩 device structure 1595 shown in Figure 15A and corresponding to Figures 4A and 4b in the tube wafer design may be used to provide electrostatic Esd protection for the device two circuits in the electronic assembly. As further described below, the device "1" can be attached to the wafer ' and/or the substrate, and/or the card, and/or the board level of the module. The volatile nanotube protection device is tilted by the ESD money voltage during which discharge event, and is not activated or activated before the ESD discharge event, as further described above with respect to Figure 7 The condition of the volatile nanotube protection device, and therefore the volatile nanotube protection device will be integrated differently into the electronic component, as explained further below. Also, since the ESD induced voltage activates the volatile nanotube protection device, their threshold voltage is designed to be higher than the operating voltage of the electronic component. For example, the activation threshold of a volatile nanotube protection device may be set at 5 volts, but the operating voltage may be, for example, 3 volts. . Figure 16A shows a volatile nanotube protection device 1622 integrated in an electronic component at the wafer, substrate, card or board level, which corresponds to the volatile nanotube protection device 1595 shown in Figure 15A, which also corresponds to the figure 4 and 4B, except for the distance between the larger nanotube channel components and the insulation input (with insulation discharge) electrode gap. Volatile protection device 1622 is coupled to pad 1626 and common conductor 1630. Pad 1626, common conductor 163〇51 201106408 and all other conductors used for interconnection, and conductors used as electrodes in volatile nanotube protection device 1595, may have a thickness in the range of 5 to 500 nm. The thickness error is well controlled by the use of known preferred conductor deposition methods, and may be, for example, from Ru, Ti, Cr, Al, Au, Pd, Ni, W, Cu, Mo, Ag, In, Ir, Pb, The metal of Sn, and other suitable metals, and combinations of these. Metal alloys (eg TiAu, TiCu, TiPd, Pbln, TiW) and other suitable conductors (including CNTs themselves (eg single-walled, multi-walled and/or double-walled)), or conductive nitrides, oxides, or A lithium compound such as RuN, RuO, TiN, TaN, C〇Six and TiSix can be used. Other types of conductors or semiconductors or materials can also be used. A preferred method of patterning the conductors is to use well-known photolithographic techniques and well-known etching techniques, such as wet etching and reactive ion button etching (RIE), the output electrodes 1625 and 1625 of the volatile nanotube protection device 1622. 'Connected in parallel by a common conductor 163〇 that is typically connected to the ground. Contacts 1645 and 1645' electrically connect output electrodes 1625 and 1625, respectively, to their corresponding counter electrodes (not shown). The signal electrodes 1629 and 1629 in contact with the nanotube channel element 1628 are connected in parallel by a conductor 1624, and the conductor 1624 is also connected to the pad (terminal) 1620 by a contact 1623. The discharge electrode 1640 is also connected by a conductor 1632. Contact 1638 and conductor 1624 are coupled to signal electrodes 1629 and 1629. Input electrode 1642 is coupled to common conductor 163 by conductor 1636. Volatile nano tube protection. The vine device 1622 is typically in the non-activated (〇 ff) state shown by the map μα. If the positive or negative ESD induced voltage is applied to the pad 1626 with respect to the common conductor 163〇52 201106408, the nanotube channel element will switch from the #OFF state to the ON state, in which the nanometer The tube channel component 1628 is in contact with the output electrodes 1625 and 1625 to connect the pad 1626 to the common conductor 1630. The contact resistance Rsw between the output electrodes 1625 or 1625 and one of the individual SWNTs of the nanotube channel member 1628 is typically 10,000 ohms. The nanotube channel element 1628 is formed by using multiple individual SWNTs in parallel. The volatile nanotube protection shock 1622 is maintained in the ON state until the ESD induced voltage is below 5 volts. The volatility operation of a similar V-tube device without a discharge gate is described in U.S. Patent Application Serial No. 1/917,794, entitled "Zimai Tube Switching Element", filed in August 2004. 13th. D. Fig. 16 is a schematic diagram of the volatile nanotube protection device 165. The connection portion to the pad and the common conductor is included, which corresponds to the volatile nanotube protection device 1622 and the connection portion shown in Fig. 16. The volatile nanotube protection device 1622 shown in Figure i6 corresponds to the volatile nanotube protection device 1650 of Figure iB. The rice tapping ^^ 1664 corresponds to the nanotube channel element 1628. Vertically to the second element, the element 1664 is used to indicate a volatile operation, a number of points in the direction of the channel force. Electric 造 s 国 钱 钱 回复 挥发性 挥发性 挥发性 挥发性 挥发性 挥发性 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 595 595 595 595 595 595 595 595 595 595 595 595 1 595 1 595 595 1 595 595 The number of the towel is connected to the eyepiece 1 (4), and corresponds to the parallel combination of the counter electrode and the 1625' and the associated counter electrode. Parallel signal electrode (6) 9 *, no); signal parallel combination; insulated input electrode 1670 corresponds to insulation 1629' V to 1 input 201106408 pole 1642; insulated discharge electrode 1686 corresponds to insulated discharge 1640. Output electrode 1655 Connected to the common via 1675 by the connection portion corresponding to the extension of the output electrode 1625 and the Ϊ 625': the protected path 1657 is connected to the pad 1656, and the signal electrode drain is connected to the pad by the device 1654 1656, which corresponds to signal electrodes 1629 and 1629, conductor 1624 and contacts 1623 of the inductive nano-protection device 1622 shown in Figure 7A. Conductor element 1668 connects electrode \686 to common node 1660. Element 1670 is an input Electrode. Element 166 is connected to 1668 and 1654 The common node, where the discharge electrode μ% is connected to the nanotube 1664' to ensure that there is no electric field between 1686 and 1664 to ensure volatile operation. The common connector 1675 in Fig. 16B corresponds to the one in Fig. 16A. Common conductor 1630. The term "conductor" is used to denote a conductive structure that is shown in cross-section and plan view, and the term "connector" refers to a wiring interconnect that is shown in a schematic view corresponding to a conductor. Figure 16C shows, in schematic form, an ON (ON) volatile nanotube protection device 1650' having ESD protection initiated by an ESD induced voltage between pad 1656 and common connector 1675, The nanotube channel element 1664 is brought into contact with the common electrode 1675 via the conductor 1662 and the output electrode 1655. The electrostatic charge applied to the solder fillet 1656 is discharged via conductor 1654 to signal electrode 1660, to nanotube via channel component 1664, to output electrode 1655 and conductor 1662 to common connector 1675. After the solder fillet 1656 has been discharged, the 'ON' of the volatile nanotube protection device 1650' is returned to the non-activated (OFF) volatile nanotube protection device 1650. 54 201106408 . Figure I shows a wafer 1700 with a peripheral pad, although it is also possible to make a = domain array pad. The day and day film may be a semiconductor wafer, or a hybrid wafer having a conductor and a nanotube, or a wafer. ^ Unless otherwise stated, otherwise the term "pad" means signal pads, 代表 stands for pads 173〇 and 174〇, which may be either input pads, output pads or output pads. Each individual pad has a volatile nanotube, as per the device. _言' welding # 173. It is protected by ESD on behalf of the volatile nano-I protection device 171, and the pad is protected by a representative 172 〇 2ESD. Each pad is connected to the signal electrode of the volatile nanotube protection device, and the output electrode is connected to the common connector (4), as shown in Figure 17 = •. The volatile nanotube protection devices 17iq and ^ correspond to the volatile nanotube protection device 165() shown in the figure and 1622 of Figure i6A. The operation of the volatility protection devices 171 and 172 corresponds to the operation described further above with respect to FIG. 16, and furthermore, in the U.S. Patent Application Serial No. (10) 33,215, the name is "non-volatile Meter f logic (NLOGIC) receiver circuit. The power supply part pad 1765 uses a volatile nanotube protection device 760' which is the same type as the other used pads 173 () and i74g used as a representative of the signal welding, the raw volatile tube protection device 171 ESD protection. 'Negative tube protection device 2 ^Volatilization required to process the discharge current 55 201106408 ESD equivalent circuit NASA Human Body Model (HBM) 9 〇〇 is illustrated in Figure 900. The discharge current 93〇 flows from the circuit 900 to the terminals, such as pads, pins and ridges on the electronic components. Figure 17 shows a schematic view of a wafer Π00 in which, for example, the volatile nanotube protective devices of the volatile nanotube protective devices 1710 and 1720 are in a normally non-activated (OFF) state, which corresponds to the volatilization shown in Figure 16B. The tube protection device 165〇. In this example, the voltage induced by the ESD on the solder fillet 1656 and applied to the protected circuit 1657 is converted from the 0FF state shown in FIG. 16B to the volatile state shown in FIG. 16 (the ON state shown). The nanotube protection device is assumed to be limited to a maximum allowable voltage of 5 volts. The ESD current path is from the pad ι656 via the conductor (wiring) 1654 to the signal electrode 1660, via the nanotube channel element 1664 to the output electrode 1655. 'via conductor (wiring) 1662 to common conductor 1675. The path resistance of the individual SWNT is mainly the conductor to the s WNT contact resistance Rsw/2 in series with the conductor to SWNT contact resistance Rc/2, which is because the resistance of other contacts is small. Much (such as milliohms), and the electrical phase of individual SWNTs is also small compared to the contact resistance scales (10) and Rc between the conductor and the SWNT. Start (Ο N) non-volatile nanotube protection device The resistance is a function of the number N of individual SWNTs of the moxibustion and may be lifted by 2 (Rsw/2+Rc/2)/N. The ESD pulse can be applied to the wafer in various ways. For example, $ Pad to pad, pad to ground and more Step by step, his method. Because the current flows through two activated volatile nanotube protection pens>, (such as series protection devices 1710 and 1720), so esd induction two, 56 201106408 is applied in the ESD pulse wave The two zen mats (such as the outlines shown in Figure 17 of the solder fillets 30 and 1740) are produced. Therefore, the total resistance between the solder bumps 173〇 and 1740 is 2 X (Rsw/2+r/2 ) / n or (RSW + RC) / N, as outlined by the equivalent circuit 18 图 in Figure 18A, and the total resistance between the solder mo or mo to the common connector 175 譬 is ( Rsw/2+Rc/2)/N. Because the common connector! 75〇 is connected to the large capacitor Cdec that can transfer the ESD current flow, the maximum induced generation pad RF energy is less than the estimated maximum voltage 1 The equivalent circuit drawing corresponds to the ESD equivalent circuit source 9〇〇' applied between the two pads (weld to pad) as described above. ESD ESD equivalent circuit source 9〇 The output 9〇 and 92〇 are connected to the soldering iron (4) and the bonding pad 174G, respectively, as shown in the outlines of Figures 17 and 18a. The equivalent circuit]8〇〇 corresponds to the output terminals 91〇 and 92〇 of the ESD equivalent circuit source 9〇〇 shown in FIG. 9, which are connected to the pads Π30 and 1740' for protection by the volatile nanotubes. When the device (for example, i7i〇 or 172〇) is activated (turned_〇N) in response to the ESD induced voltage, the discharge current 930 shown in Fig. 9 is generated. The resistance value (Rsw/2+Rc/2)/N is expressed in The start (0N) state of the volatile nanotube protection devices 1710 and 1720 after switching from the 0 FF state to the 〇N state. The volatile nanotube protection devices 1710 and 1720 typically switch to the peak current of the ESD induction current 930 shown in Fig. 9B at a sub-nanosecond speed faster than the 1 ns rise time. The swing-like nanotube protection device starts (〇N) state equivalent circuit i (Fig. 18). The system is activated with a non-volatile nanotube protection device (0N) equivalent circuit 1〇〇〇 (Fig. 57 201106408 10A) The same 'to generate the same only-nano tube device requirements. Therefore, the value of the '(Rsw+rc)/n volatile nanotube protection device as discussed further above with respect to FIG. 10A is adjusted to 5 ohms, and the ESD induced voltage can be made when Imax = 1 ampere. No more than 5 volts. If, for example, 'Rsw=Rc=l〇, 〇〇〇 ohm, then N=4, 0 个别 individual SWNTs with a channel element width of Wnt=87 um; if Rsw=Rc=20,000 ohms, then N = 8,000 individual SWNTs with a channel element width of WNT = 174 um. The volatile nanotube protection device is a relatively large device that is placed adjacent to the pad and over a circuit such as an off-chip driver (OCD). The equivalent circuit 1810 shown in Fig. 18B corresponds to the output terminals 910 and 920 of the ESD equivalent circuit source 900, which are connected to the pad 173A and the ground pad 1755, thereby generating a discharge current 930. The discharge current 930 flows through an on-state volatile nanoman protection device 1710 between the pad 1730 and the common conductor 1750, which is represented by a resistance (rsw/2+Rc/2)/N (in this example) It is 2.5 ohms), which is connected to the ground pad 1755, as shown in Figure 17. The maximum esd induced voltage on pad 1730 relative to ground pad 1755 is 2.5 volts, which is equivalent to half the maximum pad voltage of the pads. The equivalent circuit 181 of Fig. 18B is the same as the equivalent circuit 1_ of Fig. 1B, and is in an ON state in both the transmissive and transmissive nanotube protection devices. The equivalent circuit 1820 shown in Fig. 18C corresponds to the wheel-out terminals 910 and (4) of the ESD equivalent circuit source 900, which are connected to the power supply portion pad 65 and the ground pad 1755' to generate a discharge current. The discharge current 58 201106408 930 flows through the activated (ON) volatile nanotube protection device 176 位于 between the power supply pad 1765 and the common conductor 175 , with a resistance (Rsw / 2 + Rc / 2) / N indicates (2.5 ohms in this example) which is connected to ground pad 1755, as also shown in FIG. For ΐΜΑχ=1 amps, the maximum ESD induced voltage on the power supply pad 1765 relative to the ground pad 1755 is 2_5 volts, which is the same as the induction on the pad 1730 in the equivalent circuit 181〇. . The maximum ESD induced voltage on the power supply pad 1765 will be less than 2_5 volts because the decoupling capacitor CDEC will transfer a portion of the ESD induced current 930. The equivalent circuit 184 shown in Fig. 18D corresponds to the output terminals 91A and 920 of the ESD equivalent circuit source 900, which are connected to the power supply pad 1765 and the pad 1730, thereby generating a discharge current 93A. The discharge current 93〇 flows through the activated (ON) volatile nanotube protection device 176 located between the power supply pad 1765 and the common conductor 175A, and has a resistance (Rsw/2+Rc/2)/N. Indicates (25 ohms in this example) that is connected to the grounding pad 1755 'and is connected to the activated (qN) shaped volatile nanotube protection device ,), which is _(Rsw/2+Rg) /2) / n means (2.5 ^ m in this U) 'It is connected to the pad 173Q. The maximum ESD induced voltage on the power supply pad 1765 will be 5 volts, ΐΜΑχ = 1 amp through 5 ohms. Then, the de-lighting capacitor CDEC between the power supply portion solder #1765 and the ground pad 1755 will transfer some of the coffee induced discharge current 93G' to lower the maximum voltage to a maximum of 5 volts. Volatile nanotube protection device capacitors during wafer fabrication 59 201106408 For example, the volatile nanotube protection devices of 710, 1720 and 1760 shown in Figure 7 correspond to the volatile nanotubes shown in Figure 16B. The volatile nanotube protection device 1622 shown in Fig. 1650 and Fig. 16A is maintained in a non-start (OFF) state during wafer operation. The volatile nanotube protection device 1622 (Fig. 16A) in the non-activated (OFF) state does not exceed the non-activated (0FF) state of the non-volatile nanotube protection device 722 (Fig. 7A), as described above The description has been estimated to be less than 5〇岱. This is because the volatile nanotube protection device structure uses the same dimensions as the non-volatile nanotube protection structure, but has a large gap that may reduce the capacitance of the volatile nanotubes.电容 A capacitive load attached to the circuit they are backed up. In contrast, conventional protective diodes may be supplemented with 1·5 pF or 1,500 fF as described in U.S. Patent 6,141,245 to Bertin et al. The volatile nanotube protection device does not use a semiconductor diode (or transistor) and can therefore be placed at any level of the electronic component, such as a wafer, wafer carrier, card or board. On one input of an electronic component, several volatile nanotube protection devices may be used in parallel because they add less than a rigid capacitor to the conventional protection device to increase the ESD protection of the electronic component. The various hierarchical diagrams (1) of the integration of the (n) sub-assembly of the V-nanotube touch-sensitive nanotube tilting device show the heterogeneous nanotube device integrated from the wafer level to the plate level integrated into various different levels of the electronic component. . A non-volatile nanotube protection device similar to the non-volatile nanotube protection device 722 shown in Fig. 7A of 201106408 is used. The following non-volatile nanotube protection devices are used in Figures 11B-11J: non-volatile nanotube protection device 1112 is used in Figure 11B; 1122 is used in Figure 11C; 1133 is used in Figure 11D; Figure 11E, F and G 1142 is used; 1168 is used in Figure 11H; 1184 is used in Figure 111; and 1195 and 1195' are used in Figure 11J. The non-volatile nanotube protection devices used in Figures 11B-11J are activated prior to the ESD event, and the electronic components are operated by the preferred methods 1200, 1300, and 1400 shown in Figures 12, 13 and 14, respectively. Not activated before. A volatile nanotube protection device similar to the volatile nanotube protection device 1622 of Figure 16A may be used instead of replacing the non-volatile nanotube protection devices 1112, 1122, 1133, 1142, 1168, 1184, 1195. With 1195 丨. The volatile nanotube protection device replacing the non-volatile protection devices 1112, 1122, 1133, 1142, 1168, 1184, 1195 and 1195' in FIGS. 11B-11J is activated by the ESD induced voltage, and is not required They are activated and not activated, respectively, by using the preferred methods 1200, 1300 and 1400 shown in Figures 12, 13 and 14. The various layers of volatile and non-volatile nanotube protection devices that integrate the V-Nano volatile and non-volatile nanotube protection devices into the electronic components may be used together (mixed) to provide wider coverage. Scope to combine the best features of both. 61 201106408 Volatile and non-volatile nanotube protection devices may be placed at the same electronic component level or at different electronic component levels. The present invention is to be understood as being limited by the scope of the invention, and is not intended to limit the scope of the invention. For example, the steps of the flowcharts may be employed in the sequence, and more or fewer components may be used in the drawings. The non-volatile nanotube protection device of the simplified-nanotube tube is integrated into conventional semiconductors, hybrid semiconductor/nanotubes, only nanotube wafers and/or components such as modules, cards and boards. Most of the simplified non-volatile protection device structures 1910 and 1920, which are not shown in Figure 19, can be used to provide electrostatic discharge (ESD) discharge protection for devices and circuits in electronic components such as wafer 19 in Figure 19. . As described above, it is possible to add simplified non-volatile protective devices 1910 and 1920 to the wafer, and/or substrate, and/or card, and/or board level of the module. As further described above with respect to Figures 12 and 13, the simplified non-volatile nanotube protection device is activated and not activated prior to the ESD sensing flow. Simplified facial hair protection, electricity 1910 and 1920 series are further described below, and are similar to; non-volatile device structure of the structure application: US Patent No. 10/864,186, entitled "Non-volatile electric field "Effective device and circuit" and its method of formation", the US Provisional Patent Application No. 6G/624,297, which was filed on June 9, 2002, is entitled "Day;

CNT 62 201106408 Switching operation", the application date is 2 months in 2004, and both of them are included in the test. The control electrode 1915 is electrically connected to, for example, a pad of the illustrated pad 1930 requiring ESD protection; the nanotube element 1917 is connected to the common ground connector 1950, and the common ground connector 195 is connected to the ground pad 1955; And the discharge electrode 1918 is connected to the common mode connector 1960, and the common mode connector 196 is connected to the mode pad 1975. The simplified protection structures 191 and 192 are designed such that the switching voltage V is sufficiently higher than the operating voltage of the electronic component to enable the instantiated simplified non-volatile nanotube protection device 191 or 192. The method of calculating the switching voltage V is further described below. Figure 19 shows a wafer 19 with a peripheral pad, although a regional array pad can also be used. Unless otherwise stated, the term "pad" means a signal pad, such as a pad 193 and 194, which may be an input pad, an output pad or an input/output pad. Each individual pad has a simplified non-volatile protection. For example, pad 193 is subjected to ESD protection representative of a simplified non-volatile nanotube protection device 191, while pad 1940 is protected by ESD representing a simplified non-volatile nanotube protection device 1920. Simplified non-volatile nanotube protection devices 1910 and 1920 are further described below. For example, power supply, dry pad 1965 and mode pad 1975 use other structures for ESD protection, such as described above with respect to Figure 8B. The power supply pad 1965 is connected to a number of on-wafer circuits (not shown). The ground pad 1955 is connected to a number of on-wafer circuits (not shown) and is also connected to the common ground connector 1950. Mode Control Welding 1975 Series 63 201106408 Connected to ^Mongmo (4) 196G, the money is replaced by a non-volatile non-Muller device such as the device 191〇 and 192〇 insulated discharge board. During the operation of the wafer, the simplified non-volatile nanotube protection device, such as the simplified non-volatile nanotube protection device 191() and 192, must be in a non-starting state, as further described above. Explain. A simplified non-volatile material protection device may be turned-off by applying a voltage (positive or negative) to a common connection 196 196 with respect to the common connection II 195G, wherein, for example, the control electrode of the control electrode 1915 Maintained at ground. Integrating a simplified nanotube-protected device with a simple-nanotube tube into a higher level of conventional semiconductors, hybrid semiconductor/nanotubes, only nanotube wafers and/or components such as modules, cards and boards Most of the simplified volatile protection device structures 2010 and 2020, which are not shown in Figure 20 of the hierarchy, can be used to provide electrostatic discharge (ESD) discharges for devices and circuits in electronic components such as wafers 2 in Figure 2A. . As described above, it is possible to add a simplified volatile protection device structure to the wafer, and/or the substrate, and the domain card, and/or the board level. Simplified volatile money-savings are initiated by ESD money surges, but are not activated prior to processing for the simplified non-volatile nanotubes described above. . The simplified volatile nanoman protection devices 2010 and 2020 are similar to the non-volatile device structure of the following patent application: U.S. Patent Application Serial No. 64,186, entitled Non-Volatile Electric Field Effect Device and Circuit Using the Same And the formation of the party 64 201106408 Act" 'Shenzhen is June 9th, 2004; and US Provisional Patent Application 60/624,297, the name is r enhanced CNT switching operation", the application date is November 2, 2004, However, a discharge electrode having omitted insulation is further described below. . Figure 20 shows a wafer 2000 having a peripheral pad, although a regional array pad can also be used. Unless otherwise stated, the term "weld" means that the pad, such as the pads 2030 and 2040, may be either an input pad or an in/out pad. Each individual soldering iron has a simplified wave tube protection device. For example, the soldering iron 2 is said to be protected by a representative volatile nanotube protection device. 2 〇 es es D soldering 塾 2〇40 series is represented by a simplified volatile nano tube protection device-part ESD protection. The nanotube element 2017 forms the second line of PD 2010 connected to the simplified miscellaneous tube ===? Nylon tube protection _ Nylon one or two; = connector connected to the grounding pad

Device 2〇Π: ΡΓ pad 2〇65 uses simplified volatile nanotube protection for the 'heart', which is simplified for the signal soldering 2_ and 2_ representatives to simplify the protection of the neon tube protection device 4 _ with 2_The same type of ESD pipe protection: the sub-level force for non-volatile and volatile nano-Lub. The device design method for the vine device is to be described as follows: four types of nanotube protection devices are used, which use seven sub-component wafers, and/or modules, and/or cards, and/or plates 65 201106408 level For ESD protection. The structure and method for optimizing the electromechanical and atomic level design of the four nanotube protection devices is further described below with respect to four corresponding nanotube switches. The design optimization is based on the structure and method of the application, and the extension of the structure and method is described in U.S. Provisional Patent Application No. 60/624,297, entitled "Enhanced CNT Switching Operation" on November 2, 2004. These nanotube switches may be applied to the nanotube protection devices described further above and may also be applied to the nanotube memory and logic components of the following patent applications: US Patent Application No. 10 /864,186, entitled "Non-volatile electric field effect device and its use and its formation method", the application date is June 9, 2004; U.S. Patent Application No. 10/917,794, entitled "Nano Tube" "Switching element", filed on August 13, 2004; US Patent Application No. 10/918,085, entitled "Nano-tube Switching Element with Multiple Controls", was filed on August 13, 2004; Patent Application No. 10/918,181, entitled "Nano-tube Construction Structure and Manufacturing Method", the application date is August 13, 2004. The simplified non-volatile nanotube protection devices 191 and 1920 shown in Figure 19 correspond to the first non-volatile nanotube switch as further explained below; the simplified volatile nanotube protection shown in Figure 20 The devices 2〇ι〇, 202-0 and 2060 correspond to the second volatile nanotube switch as described further below; the non-volatile nanotube protection device 8\〇A 820• shown in FIG. 8A corresponds to the following The second non-volatile nanotube switch, further illustrated; and the volatile nanotube protective device i7i〇 shown in FIG. 17, corresponds to the second volatile nanotube 66 as further described below. 201106408 switch. For example, the non-volatile or volatile nanotube switch operation and the corresponding switching voltage of the nanotube switch electrical features are designed, for example, by using methods such as those described below, based on control such as spring force.

Felas and power FELEC 'and the electromechanical power of the atomic level of the Lennard, the FALAS, the FELEC, and the atomic level Fu power based on the nanotube switch structure, material, size, individual SWNT length The control and direction are estimated along with other significant parameters described further below. Apparatus for Electromechanical and Atomic Level Forces for First Non-Volatile and Volatile Nanotube Switches SETTINGS Ten Methods Figure 21 shows a simplified cross section of the first non-volatile nanotube switch 2100 of the prior art. Described as 'U.S. Patent Application Serial No. 10/864,186', entitled "Non-Volatile Electric Field Effect Device and Circuit Using the Same, and Method of Forming the Same", the application date is June 9, 2004; In the patent, the case secretary 24,297, entitled "Enhanced CNT Switching Operation", is filed on November 2nd. In this example, the non-volatile, sexual nanoswitch 21 has two individual SWNTs (NT1 and NT2) ^ and the insulator 2150 on the discharge electrode 2145 is separated by a gap 2' and each _ and control The electrode 2140 is separated by a gap 1 between the gap 1 and the gap 2," the page shows the green distance corresponding to the non-extended individual NT1 and NT2. In this example, the individual SWNTs and ΝΤ2 are formed, and the object 2155. NT1 And NT2 may be extended to position A, as shown by NT1-A and ΝΤ2·Α, while NT1_A and nt2_a are in contact with insulator 2150 as shown in the prior art 67 201106408 2 2; or extended to 1-Β As shown by the 2-Β-Ν, and ΝΤ1-Β盥ΝΤ2-Β system: the pole 2140 contact 'as in the diagram of the conventional technology 仙 and Xian S, 1 touch t ί tube NT1 and NT2 both with the signal electrode _ and α, only one electrical contact 2160 or 2160 is needed, and the two contacts in parallel reduce the contact resistance between the signal electrode and the individual. The nanotubes NT1 and ΝΤ2 are pinned (fixed) to each A pin-pinned nanotube read suspension structure, and may be referred to as a suspended nanotube ion beam structure. Dielectric material and 2 clear shape One part of the swnt pinned (supported) structure. The insulator 215〇 may be placed on the electrode above or below the SWNT layer so that the control electrode can instead be placed on the S WNT layer (not The insulating discharge electrode may be located below the SWNT layer (not shown). US Patent Application No. 10/864,186, entitled "Non-volatile electric field effect device and circuit using the same and method of forming the same "Applicants are June 9th, 2004; and US Provisional Patent Application 60/624,297, entitled "Enhanced CNT Switching Operation", the application date is November 2, 2004, which shows that it corresponds to being in ΟN and Non-volatile nanotube switch of the first non-volatile nanotube switch 2100 with a 0 FF state or a transition between states. In this example, Figures 21A-21C show that the first non-volatile nanotube switch 2100 switches from a 〇 FF state 2100-1 of a logic state such as "0" to an ON state 2100-3 of a logic state such as "1". 21D-21F show that the first non-volatile nanotube switch 2100 is switched from a state of "1" logic state s] [state 2100-3, to a state of "0", FF state 2100-1. 68 201106408 Figure 21A shows that the first nanotube switch in the off position uooq has no conduction path between the signal electrode deletion, Xiao and the control NT1 δ 2140. The extended individual SWNT _A and NT2-A systems Contact with insulator 2150. Thunder plate Γ individual let NT1 and NT2 may be in the gap between the insulating electrodes by insulation! In the gap region formed by gap 2, H = long OFF (〇 logic) state (not shown) The example of the non-extended (10) H is displayed in the temporary secret of the money, the name of the second is "enhanced CNT switching operation", the application for the toilet is 2nd month, and the description is in the US patent application. Case No.} ◦ , , , , , , , , 冉 「 「 转发 转发 转发 转发 转发 转发 转发 转发 转发 转发 转发 转发 转发 转发The road and its method of formation" applied on June 9, 2004. The White Technology® 21B shows that it is over 21〇〇_2 (switching from the squeaking state to the ON state) - = closing: relative to the heart of the zero (grounding) voltage J, pole 2140 Having the application to the control electrode 2140, as exemplified in US Provisional Patent Application No. 00/624,297, the name is "enhanced CNT switching operation", and the date of the request is the year of reading; It is explained that under the electrostatic force Felec (not shown /,), 羯 21A shows that both NT1_A and ΝΤ2·α are attracted to the control, and the pole is 214G. The local switching position 21 (10) shows a transitional switch that transitions to contact with the control electrode 2140: 2 has not been converted and maintained in position] STT2-A. In this example, since NT1 has a lower threshold voltage than ΝΤ2 (which may be due to geometric differences between 69 201106408), NT1 transitions before NT2. Since the gap size is essentially the same, the difference in threshold voltage may result from the length variation of the individual SWNTs where NT1 has a longer length than NT2. Figure 21C of the prior art shows a first non-volatile nanotube switch 2100 in an ON state 2100-3, where NT1 is in the NT1-B position and NT2 is in the NT2-B position. Both the individual SWNT NT1 at position NT1-B and the NT2 at position NT2-B are in contact with control electrode 2140 to form two parallel electrical paths between signal electrodes 2160, 2160' and control electrode 2140. For example, the switch 2100 in the ON state 21 〇〇_3 stores the "1" state. Figure 21D of the prior art shows a first non-volatile nanotube switch 21A corresponding to Figure 21C in an ON state 2100-3, where NT1 is in the NT1-B position and NT2 is in the NT2-B position. The individual SWNTNTs located at the location NT1_B are in contact with the control electrode 2140, thereby forming two parallel electrical paths between the signal electrodes 2160, 2160' and the control electrode 2140. 21E of the prior art diagram shows that the first non-volatile nano-switch 2100' in the transitional local switching position = 00-2 (switching from the ON state to the 〇 FF state) is relative to the zero (ground) dust Both the signal electrode m 2160 and the control electrode 2140 have a voltage ν' applied to the discharge electrode 2i45 as shown in the U.S. Provisional Patent Application Serial No. 24,297, entitled "Enhanced CNT Switching Operation", the application date is 2 to 4 years. The applied voltage V is constructed to further describe the electrostatic force FELEC (not shown as 201106408), which attracts both NT1-B and NT2_B shown in FIG. 21D to the discharge electrode 2145. The local switching position 2100_2 shows a transition switch in which NT1 has transitioned from the position NT1_B to the bit SNT1_A in contact with the insulator 2150 on the discharge electrode, and NT2 has not been converted and maintained in the position NT2-B. NT1 has a lower threshold voltage than NT2 (which may be due to geometric differences), so NTl is traversed at NTf. Because the gap size is essentially the same, the difference in threshold voltage may be due to the length of the individual SWNTs. Variation, wherein Ντι has a longer length than NT 2. Figure 21F corresponding to the prior art of Figure 21A shows that switch 2100' at 〇FF position 2100-1 does not have between signal electrodes 2160, 2160 and control electrode 2140 Conduction path. The extended individual SWNT NT1-A and NT2-A are in contact with the insulator 2150. Alternatively, the individual SWNTNT1 and NT2 may be in the gap region formed by the gap i and the gap 2 between the insulated discharge electrode and the control electrode. In the non-extended 0FF state (not shown). For example, the switch 21 in the OFF state 2100-丨 stores the "〇" logic state. Non-extended OFF An example of this is shown in U.S. Provisional Patent Application Serial No. 60/624,297, entitled "Improved CNT Switching Operation", filed on November 2, 2004; and in the U.S. Patent Application Serial No. 10/864J86, the name of which is incorporated herein by reference. The application date is June 9th, 2004, for the "non-volatile electric field effect device and the circuit using the same and its forming method". Figure 22A shows a cross-section 22 of the prior art, as shown in U.S. Provisional Patent Application Serial No. 6/624,297, entitled "Enhanced cnt Cut 71 201106408 Replacement Operation", and Cap Day is the second day of the brain year. The three independent terminal splitting cross sections 2200 are corresponding to the cross section of the switch in Fig. 21, where the nanotube element 2255 corresponds to the nanotube element 2155; the nanotube signal contacts 226G and 226GI correspond to the respectively. The meter f signal contact brain and the 2160 'control electrode 2240 are corresponding to the control electrode 214 〇; the discharge electrode 2245 having the absolute and the 彖 body 225 对应 corresponds to the discharge electrode having the insulator 2 2145 ° nano tube element plus It is the nanostructure of the individual SWNTs, as shown in U.S. Patent No. 6, 921, entitled "Nanotube Films and Products", or the nanotube element 2255 may be an individual SWNT of 2 The structure of the nanometer is shown in the US Linyi Ming case 6〇/624,297, and the name is “Enhanced CNT Switching Application Date November 2, 2004. The structure of Figure 22a is that 70 pieces of 2255 are removed from the sacrificial layer. The gap 1 : f is formed as described in U.S. Patent Application No. _, 186, 々 々 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 day. Alternatively, the cross section / this statement is along the individual nanotubes to show that the SWNT element 2255 is in the OFF state. The individual SWNTs in the 〇N state will be in contact with the control electrode 2240 (not shown). The SWNT 2255 is pinned to each end and suspended in the gap V? over the length L_; the gap 2 is above. The suspension length L of the SWNT element 2255, the spacing of the gaps 2, the thickness of the insulator of the insulator 2250, and the phase of the tomb; the tenth of the electric current, the length of the contact electrode 2240 and the discharge electrode 2245, the characteristics, and the other structure of the cross section 2200 The characteristic determines the operating voltage of the three independent terminal devices of the cross-section 72 201106408 face 2200 and forms the first non-volatile nanotube device. For example, the conductor may comprise RU, butyl i'Cr, Abu Au, Pd, Νι, W, Cu, Mo, Ag, In, Ir, Pb, Sn, TiPd, Pbln, TiW, TiAu, TiCu, CrCuAu, RuN, Ru〇, TiN, TaN, c〇Six and TiSix. For example, the insulator may comprise Si〇2, SixNj Al2〇3. For example, a nanotube element can comprise individual SWNTs having a diameter ranging from 〇·6 to 2 nm and a suspension length ranging from 20 nm to 400 nm, or individual swnts in a substantially parallel direction. For example, the gap region may be in the range of 2 to 50 nm. The inventors contemplate that a similar configuration can be produced by using a double wall or multi-walled nanotube having a length and gap adjusted to maximize performance. An important device design parameter is the ratio of the levitation length to the gap size (such as LSUSP/gap 1), as shown in Figure 22A, because the extended individual SWNT's elastic force is the levitation length and displacement (resulting in individual SWNTs). The function of the extension, where the maximum displacement (and extension) is determined by the gap size. For the same maximum displacement (extension) corresponding to the same size gap, the elastic force increases as the suspension length Lsusp of the nanotube element increases, as explained in the following article. Reference 1: Rueckes, T et al. Carbon Nanotube Non-volatile Random Access Memory for Molecular Calculations 'Science', Vol. 289, July 7, 2000, pp. 94-97; References 2: Dequesnes, et al., “Calculation of the Adsorption Voltage for Carbon Nanotubes for Nano Electromechanical Switches”, Nanotechnology, 13, 2002, pp. 120-131, and Reference 3 · Dequesnes, Μ Chen Nai 73 et al. 201106408 Static and Dynamic Analysis of Meter Tubular Switches, ASME Report, Vol. 126, July 2004, pp. 230_237. Fig. 22B shows a cross-sectional view 2000 of the prior art, as shown in U.S. Provisional Patent Application Serial No. 6/624,297, entitled "Enhanced CNT Switching Operation". The filing date is 2, 4 years, 2 months. The gaps and gaps 2 shown in Fig. 22B are shaped after the sacrificial layer is removed, and the gaps 2, as described in U.S. Patent Application Serial No. 10/86V86, the name of "non-volatile electric field effect devices and their use" The circuit and the method of forming the same, the day of the request is 2 (10) June 9 and the same as the county in Fig. 22A, but the suspension length in the head 22B: the Lsusp in the hidden picture 22A has been reduced, which is by using The reduced 电极 电极 electrode spacing 226 〇, and 226 (), and the extension of the insulator region 2270 by the additional insulator period and the extension of the insulator region by the addition of the insulator. The length of the discharge electrode 具有 with the insulator bribe has been reduced Μ conforms to the signal electrode 226 〇 " and 22, the = mouth. In the face 22 ' 'the control electrode 22 (four) has been held two: However, it is also possible to reduce the length of the control electrode 2240. Nano suspension length and clearance Ratio setting (switch) design parameter, which determines the size of the force that the nanotube element recovers. Another important factor is whether the Persian operation will be volatile or non-singular = open relationship Volatile; Fruit F elas Fu 'sexuality. Volatile device is normally closed: state:: at::= 〇FF transitions to 〇N state, but returns to == 74 when the voltage is removed 201106408 Non-volatile device may be OFF The state is in the ON state. When the voltage is removed, the non-volatile device is maintained in the OFF state or the ON state. The non-volatile nanotube device generally has a large nanotube suspension length to clearance ratio, such as 10 or more. More, as further shown below. Volatile nanotube devices generally have a smaller nanotube suspension length to gap ratio, such as 5 or less, as further shown below. Even for random orientation The same signal electrodes of individual SWNT nanotube elements are separated, and the length of the individual SWNTs shown in cross sections 2200 and 2200' may vary, as explained further below. When using individual SWNTs with random alignment The change may be reduced by the use of an improved layout and design method, as shown in U.S. Provisional Patent Application Serial No. 60/624,297, entitled "Improved CNT Switching Operation", Application The date is November 2, 2004 and is further explained below. However, for a nanotube element having substantially parallel individual SWNTs, the levitation length will be substantially the same as that shown in U.S. Provisional Patent Application Serial No. 60/624,297, entitled "Improved CNT Switching Operation", application date 2004. November 2, and as further explained below. For a volatile nanotube switch such as the first volatile nanotube switch 2300 shown in FIG. 23A and the first volatile nanotube switch 2300' shown in FIG. 23B, the discharge electrode having the insulator 2250 may be omitted. 2245 and having an insulator 225 (discharge electrode 2245' of V. This is because the first volatile nanotube switches 2300 and 2300' return to the OFF state when the voltage is removed, so that the discharge electrode is not required. 75 201106408 The first-volatile nanotube switch 23GG shown in 23A has two: = control: the electrode is connected to the signal electrodes 2360 and 2360 having a total length of 355 of the suspension length, and the B-7 5 is separated from the control electrode 2340. A gap J body 2370 盥 conductor % « , insulator /, 〇 is used to pin the suspended nano tube element on one end too ^ insulator 23W and the conductor is pinned to the opposite end of the core nano tube element 2355. In operation, v can be applied to the control electrode with grounded (zero) volts of signalable electrodes 2360 and 2360. Alternatively, (d) f can be applied to signal electrodes 2360 and 2360 to ground to control electrode 2340. Although showing two letters Electrode 2360 and, but only one of signal electrodes 2360 or 2360' is required. Figure 2. The length of the suspension length portion of the nanotube element f% relative to the Lsusp has been reduced by using the signal electrode spacing 2360', = - and the extension of the insulator region 237A by the additional insulator 2375, the hunting by the additional insulator 2375, extending the insulator region 237", and reducing to & ,, the first volatile nanotube switch shown in Figure 23B 2300, "^ in the tube 2300. In the cross section 2300, the control electrode has been maintained unchanged; however, the length of the control electrode 2340 may also be reduced as the first volatile nanotube switch shown in phase = 23B The operating system γ of 2300 is illustrated for the first volatile nanotube switch 23A shown in Fig. 23A. The layout of the first non-volatile and volatile nanotube switch is designed by Tian Yi. 76 201106408 Structure and method diagram 24 is a plan view 240 of a conventional technique for displaying a conductive photo frame signal electrode structure in contact with individual SWNTs in a random direction, which corresponds to a cross section 2200 in FIG. 22A prior to forming the discharge electrode 2245 and the insulator 2250. Conductive The signal electrode structure and manufacturing method are shown in U.S. Patent Application Serial No. 1/864,186, entitled "Non-Volatile Machine Field Effect Device and Circuit Using the Same and Its Forming Method J' Application Date is June 2004 9 曰, and shown in US Provisional Patent Application No. 60/624,297, entitled "Enhanced CNT Switching Operation", the filing date is November 2, 2004. The prior art control electrode 2440 shown in plan view 2400 corresponds to the control electrode 2240 shown in the conventional cross section 2200 of FIG. 22A; and the individual nanotube elements 2455-: 1, 2455-2, 2455-3 and The conductive photo frame signal electrodes 2460, which are electrically contacted by the two pin terminals of the other individual nanotube elements, correspond to the signal electrodes 2260 and 2260' of the prior art cross section 2200 shown in FIG. 22A. Plan view 2400 shows the individual SWNT levitation lengths due to the random orientation of individual SWNTs. Individual SWNTs 2455-1 have the shortest suspension length of the individual SWNTs shown. The horizontal SWNT 2455-2 is more than 100% longer than the nanotube 2455-1, while the SWNT 2455-3 is longer than the 40% of the nanotube 2455-2. Changes in the length of individual SWNTs will result in changes in device characteristics, such as switching voltage and performance. Note that the sacrificial layer between the individual SWNTs and the control electrode 2440 is not shown in FIG. Modifying the plan view 2400 to limit the number of individual SWNTs that are in contact with the conductive photo frame signal electrodes 246, will reduce the length variation, as shown in U.S. Provisional Patent Application Serial No. 60/624,297, entitled "Improved CNT Switching Operation". The application deadline is November 2, 2004. The prior art plan view 2500 of Figure 25A shows an insulator frame 2510 as part of a nanotube pinned structure. All individual SWNTs are electrically isolated after a preferred process step of insulator deposition by patterning using known industry techniques. Note that the sacrificial layer between the individual SWNTs and the control electrode 244A is not shown in FIG. Next, the preferred method patterns and etches (removes) the insulator 251 to form the openings 2520 and 2520 by using a preferred nanomanipulation method as described in the incorporated reference, thereby exposing the selected The end of individual SWNTs. For electrical contact purposes, the plan view 2535 shown in Figure 25B shows selected nanotubes having selected exposed end regions of individual swNTs 2455-2, 2455-4, 2455-5, and 2455-6. E.g

The additional individual SWNTs of 2455-1, 2455-3 have insulated end regions 'with other individual SWNTs' to avoid electrical contact.

Second, the preferred method deposits and patterns the conductor layer by using a preferred nanotube processing method as described in the incorporated references. The plane view 2545 displayed is electrically contacted and pinned to individual SWNT 2455-2, 2455-4, 2455-5 盥 24SS < 夕道 + _ , , ^455·6 conductive photo frame signal electrode 2560. For example, the other individual swnts of Xiang], 2455_3 and the other individual SWNTs have the (4) end pure domain, which avoids electrical contact with the conductive photo frame signal electrode 2560. Then, the use of the name of the "non-volatile electric field effect device and its use circuit and its formation method", the application date is June 4, 2014, the United States 78 201106408 National Patent Application No. 1_4,186 A preferred method (not shown) is to complete the switch structure corresponding to the cross section 2200 of Figure 22A having a nanotube element 225 comprised of individual swNi comprising 2455-2, 2455.4, 2455_5 and 2455_6. 5. Please note that Figure 2 5 corresponds to Figure 2 2 A or Figure 22B. By the intrinsically parallel individual SWNTs 2655-1, 2655-2, 2655-3, 2655-4 and 2655-5 (shown in US Provisional Patent Application No. 60/624,297, the name is "Enhanced CNT Switching Operation" The application is 11 November 2, 2004) replacing the individual SWNTs of the random alignment to modify the plan view 2500 in FIG. 25A, and the plan view 2600 shown in FIG. 26A eliminates the change in the suspension length caused by the random direction of the individual SWNTs. . The prior art plan view 2600 includes an insulator frame 261 as part of a nanotube pinned structure. All individual SWNTs are electrically isolated after a preferred process step of insulator deposition and patterning using known industry techniques. Note that the sacrificial layer between the individual SWNTs and the control electrode 2440 is not shown in FIG. Also, please note that the figure % corresponds to FIG. 22A or FIG. 22B. Next, the preferred method forms the regions of the insulators 2610 of the openings 2620 and 2620' by using the preferred nanotube processing method described in the incorporated reference, to expose the selected individual. The end of the SWNT. The plan view 2635 shown in Figure 26B shows the selected nanotubes having the exposed end regions of the selected individual nanotubes 2655-2, 2655-3 and 2655-4. For example, an additional individual SWNT of 2655-1 and 2655-5 has an insulated end region' to avoid electrical contact. 79 201106408 The preferred nanotube treatment is based on the displayed product and the patterned conductor layer is shown in the reference. 2645-2, 2655-3 and 2655-4

Figure 26C electrically contacts and pinches the individual S WNTs such as 2655-1, 265^ conductive photo frame signal electrodes 2660. For example, the region that avoids the de-energization phase 2 =; the insulated terminal structure 2645 is used to select the electrical contact of the U-genus. The son of the SWNT, the field and the soil ~ are physically and electrically connected in parallel to determine the electrical resistance between the frame signal electrode 2660 and the control wide pole 2440. Because the main parallel is the main change, the structure 2645 is required to reduce the individual nanotube changes in suspension. Xi Yu then uses the name "face-effect machine electric field effect device and its use And the US method for the shouting method, please use the preferred method (not shown) of Qianlan 64, 186 to complete the switch structure corresponding to the horizontal J2 2200 in Fig. 22A, which has 2655_2, 2655·3 and 2655. A nanotube element 2255 consisting of -4 individual SWNTs. The planar view 2645 shown in Figure 26C shows an individual SWNT that is essentially parallel 'which is essentially perpendicular to the photo frame signal electrode 266. However, the individual SWNTs are not required to be substantially perpendicular to the photo frame signal electrode 2660, so that control is essentially The suspension length of the parallel SWNTs varies. The structure 2645 may be modified to reduce the openings 2620 and 2620' to 2620" and 2620...' as shown by the plan view 2650 of Figure 26D. The plan view 2650 shown in Figure 26D shows electrical contact. And pinned a conductive photo frame signal electrode 2660 of SWNT 2655-3. Other individual SWNTs such as 2655-1, 201106408 2655-2, 2655-4 and 2655-5 have insulated end regions, which avoid signal electrodes with conductive photo frames 266. Electrical contact. Figure 27A shows a plan view 2700 of the signal electrode structure in contact with individual SWNTs in substantially parallel directions, where the preferred method would be substantially parallel to SWNT 2655-b 2655-2, 2655-3, 2655 -4 and 2655-5 are deposited on the lower pinned structures 2725 and 2725, which correspond to the cross section in Fig. 22, respectively, before forming the discharge electrode 2245 having the insulator 2250 The lower pinned structures 2227 and 227A of 2200. Note that the sacrificial layer between the individual SWNTs and the control electrode 2710 is not shown. ^Secondly, the preferred method is by using the reference as incorporated A preferred nanomanipulation process is illustrated to pattern and etch (remove) individual swnts 2655-1 and 2655-5, and known industrial methods are used to define lower pinned structures 2725 and 2725' and control electrodes The corresponding portion of 2710, thereby resulting in a lower width of the pinned structure 2725" and 2725, " and control electrode 2710'' as shown in the plan view 2735 of Figure 27B. Next, the preferred method is incorporated by use. A preferred nanotube treatment method as described in the reference, depositing, patterning, and etching signal electrodes 2750 and 2750' in contact with substantially parallel SWNTs. Then, using the name "non-volatile machine field effect device and use" The circuit and the method of forming the same are described in the preferred method (not shown) of U.S. Patent Application Serial No. 10/864,186, which is incorporated herein by reference. Cross section 2200 Structure having a SWNT 2655-2,2655-3 nm and individual 2655-4 element 2255 composed of the officer. Note that FIG. 27 corresponds to FIG. 22A or FIG. 22B. 81 201106408 By using the selected structure, size and other U + level force to set the switch operating voltage, the n-th atomic electromechanical and atomic device design material non-volatile nanotube switch corresponds to Figure 28, Figure 28A shows 〇FF state A simplified cross-sectional view of a first-non-volatile nano (four) switch 2_ of three separate terminals having a suspended nanotube element 2855 in a non-extended state of length LSUSP2. The nanotube element 2855 is composed of individual diameters. Signal terminals 2860 and 2860' correspond to signal terminals 2260 and 2260, respectively, in Figure 22, and are located at the same voltage and form one terminal of three unique 2-terminal first non-volatile nanotube switches 2800. The nanotube element 2855 is pinned to both ends by a known 彳s electrode 2860 and the corresponding insulator 2870 and the signal electrode 286〇 at the other end and the corresponding insulator 2 8 70f (a kind of Pin-pinned nano tube component suspension structure). The nanotube element 2855 corresponds to the nanotube element 2255 shown in Figure 22A. The nanotube element 2855 may, for example, be a random alignment SWNT of SWNTs 2455-2, 2455-4, 2455-5 and 2455-6 as shown, for example, in Figure 25C, or SWNT 2655-2, 2655- as shown, for example, in Figure 27B. 3 is composed of SWNTs that are essentially parallel to 2655-4. The control electrode 2840 of length LEFF in Fig. 28A corresponds to the control electrode 2240 in Fig. 22A. In the OFF state, the control electrode 2840 is isolated from the nanotube element 2855 by a gap 1 of dimension z'. In the ON state, control electrode 2840 is in contact with nanotube element 2855, as further shown below. The discharge electrode 82 201106408 2845 having the insulator 2850 having a thickness of TiNS in Fig. 28A corresponds to the discharge electrode 2245 having the insulator 225 显示 shown in Fig. 22A. s 月庄思, Figure 28a corresponds to Figure 22A or 22B. Regarding the 〇FF to 〇N state transition of the first-nonvolatile tube switch in operation, the switching force shown in 1 28B is 28 〇〇, (corresponding to the first-nonvolatile nanotube switch in Fig. 28A) 2_), in response to: the elastic force FELAS from the displacement (extension) of the nanotube element; the electrostatic force 1W due to the electric field between the control electrode and the nanotube element 2855; and as explained above - The reference provided in the step Κ3 is due to the atomic level LennanW() nes force of the interaction between the nanotube element 2855 and the van der Waals under the control atomic level. The felas is schematically represented by a spring and a support portion 288 having a spring coefficient k, as explained further below. During the qff to 〇N state transition, FLi is negligible because of the separation distance, and only feel and FELAS are involved, wherein the nanotube element 2855 of diameter dcNT has Felas proportional to the =shift (deflection distance) z, and The electrostatic force FELEC determined by the separation distance y is as shown in Fig. 28B. For this example, the individual ^WNT diameter dCNT =: l. The powers felas, Felec, and Fu are estimated by using s as one of the dimensional approximation models provided in reference ι_3, and from 〇FF to ON state switching voltages in references 1-3 as further explained below. The power multiplication factor of 10 is calculated. The one-dimensional approximation model is summarized in Table 1 on Felas, Table 2 on Felec, and Table 3 on the atomic hierarchy of individual SWNTs. Regarding the tube-pin-pin-switching force summary 2800' of the tube, using the formula of the felas 83 201106408 of Table 1, the individual SWNTs having the diameter dCNT=:i nm are included, and the displacement z=z' of the nano-device 2855 = 2 〇 nm, and the suspension length of 200 rnn can be obtained as FELAS = 〇.56x 1 〇 · 10 Newtons. Utilizing the table 2800 for the pin-and-pin switch force of the nanotube, (including the individual swnt having the diameter dcNT=1, the relative dielectric constant sR=l of the gap i, and the interval of y==2〇ηη) The formula of FELEC of 2 can be obtained as Felec=37x 1〇-12v2 Newton, which is the voltage applied to the control electrode 284〇 with respect to the ground voltage (zero volts) applied to the electrodes 286〇 and 286〇. The discharge electrode 2845f is at ground voltage. Using factor 1 〇 as a force multiplier's example, let FELEC = l〇FELAS, and V = 3.9 volts, which is separate from the fixed-fixed suspended first non-volatile nanotube switch 28〇〇 structure. The switching voltage of the SWNT and the ratio of LSUSP/z'"i〇/i in the above reference are further explained. When the nanotube element 2855 is in the ON position shown in Fig. 28C, the 〇FF to 〇N transition is completed. Table 1 k=384EI/L3 FELAS=kz (384 EI/L3) z For CNTs: E « 1.2 TPa Ι=(π/64) (D〇4 — Dj4) For individual SWNTs of 1 nm diameter: E=1.2 TPa D〇=dCNT=l nm

Dj =0 84 201106408 L=LSusp z = displacement from non-extended position FELAS=-22.3 x ΙΟ.24 z/(LSUSP)3 Newton Table 2 For cylindrical diameter d & interval y: UELEc=(1/ 2) C V2 C»27i^Rs0L/y In (y/d)2, about y>2d

Felec=_ d (UELEc)/dy

Felec =7t^R^〇LV2/[y In (y/d)2] ^0=8.85 x ΙΟ'12 F/m About individual SWNTs with a diameter of 1 nm: π = material & geometry compliance L = LEFF effective length for electrostatic force y = separation distance between individual SWNTs and electrodes d = DCNT = l nm individual SWNT diameter V = applied voltage

Felec" 27·8χ ΙΟ·]2 sRLEFFV2/[y ln(y/dCNT)2]Newton Table 3

Ulj=^ [(σ/^)12 - (σ/^)6]Ν

Flj^· d (ULj)/dl'=6 (f/σ) [2(σ/γ)13 - (σ/γ)7]Ν About the atomic level force of carbon to carbon atom: σ=0.35 X 10' 9 m=0.35 nm 85 201106408 ¢=4.6 χ 1(Γ22 Jol N=# Atom = Natoms

Flj=(6 x 4.6 x 1(Γ22/3·5 xl〇-,[2 (〇35/y)13 _ (0.35/y)7 ]Natoms About y=rF-MAX=0.45 nm The maximum power of carbon atoms Separate FLJ=(6x 4.6 xl〇-22/3.5x ΙΟ-iO) [2 (〇35/〇(0.35/0.45)7]Natqms

Flj=0.76 x 1 (T12 Natoms Newton first non-volatile nanotube switch non-volatile state in order to let the first-nonvolatile nanotube switch 28〇〇 operate in a two-sex mode, which is removed at the voltage with Felec =〇日寺 maintains the ON state of ^28C, then the sum of the atomic level forces Fu of the extended portion of the nanotube element 28 must be greater than the recovery elastic force Felas. The individual contained in the nanotube element 2855 The SWNT may perform a power comparison. The atomic level of the Lennard-Jones form is the Vaerwal = the interaction force ELj is the atomic level force between the extended nanotube element π" and the control electrode 2840 in the LEFF region. With the use of a material for the (4) electrode 2840-like conductor or semiconductor, a change is made. The atomic-level force between any pair of atoms of atoms of different materials may cause turbidity and waste when the atomic/molecular level computer simulation To estimate this. In this example, a graphite ground plane is assumed to perform a fairly simple calculation based on the force of carbon on carbon atoms using the Eu force equation of Table 3 to evaluate the first non-volatile nanotube. The energy of the switch 28 (9) 86 201106408 force to retain the information in the element 2855 shown in Figure 28c is in contact with the control electrode 2840., the middle does not come to assume that the individual SWNT has (10, value. The first; ^, then too half of its The chirality of the monument p 〇) and 丨nm, the direct official is not the official spiral periodicity is almost Μ·' and the number ^3 provides contribution, U can be estimated as follows: LEFF=(10) 伽' has 88 Position, here in the example, the six carbon atoms of τ take into account the six carbon 在 on the graphite substrate, so NATOMS 530 (53 〇 carbon vs. carbon pair). The corresponding atomic-level Lermani.Icmes force for the 53 〇 carbon atom It is calculated as Fy=4 χΐ〇_1〇Newton. Using FELEC=0 'in the individual SW of the position shown in (10) of Figure 28c: T's spear force is F『Felas=4 χ 1〇-丨, ο .5 X 1〇-1ί>=3.5 X 10 Newton. Because Elj>Felas', the device is non-volatile. About the first non-volatile nanotube switch ο N to 〇 FF state transitions to operation, shown in The switching force profile 2800 of Figure 28D corresponds to the first non-volatile nanotube switch 2800 shown in the on position of Figure 28C and is shown The electrostatic force FELEC applied to the elongated nanotube element 2855 to overcome the atomic level of the 530 pair of atomic layers of the Lennard-jones force eu, using the elastic force Felas which is schematically represented by the extended spring and the support portion 288〇 Assist, in this case, the spring k is displaced to the position k. The force multiplication factor of 1〇 used above is used to estimate the 〇FF to on switch transition voltage, and the FELEC=i〇(Fu. Felas) 0 87 about the ON to OFF transition. 201106408 Electrostatic force Felec is generated by applying a voltage v to the discharge electrode 2845, applying a ground voltage (zero volts) to the signal electrodes 2860 and 2860', and applying a ground f to the control electrode 284G. In order to calculate the Felec, first calculate the effective dielectric between the dielectric material and the air gap structure 2800 using two series capacitors having a phase # area, with respect to the distance y between the negative and negative electrodes 2855 and the discharge electrode 2845. The effective number of dielectric hangs may be calculated as follows: y/Gn=Tm/em+y/i For y=4〇nm, insulator 285〇 material Si〇2 has insulator phase electric & number ~-4 and T 〖NS=i5 nm, and y'=25 nm, about y=40

Ιΐΐϊΐ 3^· J « 1.4 Using the formula of the feec of Table 2, for example, fecel=3〇x 10]2 V2_1fwr· ρ v —ιυ (Fu-FELAS)=36 χ ι〇·10 Newton, and 〇N The switching voltage to FF may be V=ii volts. ", to achieve a sufficient electrostatic force FELEC V = ll volt switching voltage on the graphite plane control electrode 284, however, 'control electrode 284 匕疋 匕疋 匕疋 metal' such as RU, Ti, cr, A Bu Au, Pd, Ni , W, Cu,

Mo N A T T TTV

Ag, In, Ir, Pb, Sn, and other suitable metals, and combinations thereof. Metal alloys such as TiAu, TiCu, TiPd, PWn and TiW may also be used, and their suitable conductors include their own CNTs (such as having a single wall, multiple walls and/or double walls), or conductive nitride layers, oxides, 5 Telluride 'such as ruN, Ru〇, TiN, TaN, c〇 Λ /, Α Α ^ ΑΧ One ° use other types of conductors or semiconductor materials. Semi-conductive materials such as Si, Ge, GaN, GaAs, and others can also be used. The atomic level force between the individual SWNT' and the atoms of the control electrode 284G may result in a cut-off of 201106408, "the pressure is greater than, for example, 11 volts. Again, changes in the control electrode material that may be used by different manufacturing methods may be Resulting in a change in the switching voltage v of the first non-volatile nano switch 2800. Control of the Lennard-Jones atomic level force on the first non-volatile nanotube switch by adding an atomic layer on the control electrode

The first non-volatile nanotube switch 29A, which is not shown in Fig. 29, corresponds to the first-nonvolatile nanotube switch 22A shown in Fig. 22A, and shows an atomic layer changed to the atomic level. , Len bribe (Εω power structure, so that the switching voltage is independent of the control electrode material. A method of modifying the structure of the non-volatile nanotube _ 29 (9) shown in the ® 29 at the atomic level, using the switch structure 2200 In the modification, the individual SWNTs 2942 which are substantially parallel are added to be close to the control electrode 294, and the 1 corresponds to the control electrode 224A shown in Fig. 22A. Essentially parallel, SWNT 2942 is shown as a sectional view, and corresponds to To individual layers of nanotube fabrics, these SWNTs are, for example, those of the NE tubes 2655-2, 2655-3 and 2655-4. At one atomic level, the SWNT 2942 is accessible (less) Yu Ruru·5 nm) controls the electrode u牝仃 and also makes electrical contact with the control electrode 2940. Under less than 〇5 nm distance, the electron orbitals will overlap, so the conduction is generated in a very close situation, so it is Electrical contact. Shown in parallel in Figure 29. The space between the individual SWNT 2942 and the control electrode 2940 is not drawn to scale, but is intended to indicate an atomic level spacing. The nanotube element 2955 is pinned to both ends (pinning_pinning nanotube 89 201106408 suspension) The signal electrode 296A and the insulator 2970 in FIG. 29 respectively form a pin-pin structure corresponding to the signal electrode 2 and the insulator 2270 in FIG. 22A, and the signal electrode 2_ is formed corresponding to FIG. 22A, respectively. The electrode 2260 and the insulator 2270 are mounted on the insulator 2950 of FIG. 29 and have a different pin-and-pin structure with the discharge of the insulator 2250. The display has an electrical electrode 2945 corresponding to the electrode 2245 of FIG. 22a. Figure 30A shows a cross-sectional view of the first non-volatile nanotube switch 3000 with three juxta (five) vertical terminals, each corresponding to the first non-volatile nanotube switch 29 in the OFF state. 〇, 甘和ώτ ^ , has a length of LSUSP in the non-extended state of the nanotube element i 目女古 π j ★ 加. 丨 3055. Nano tube element 3055 is composed of an individual with direct dCNT, NT Composition The signal terminals 3060 and 3060' respectively correspond to the λ^^ ls terminal 2960 and 2960· of FIG. 29, are at the same voltage, and form three terminals ΟΟΛΛ μ * 7 θ the first non-volatile nanotube switch 2900 One terminal is shown in Figure 30. The insulators 3070 and 3070' correspond to the insulators shown in Figure 29, _ 啕 啕 2970 and 2970. The nanotube element 3055 is deficient by one end. The electrode 3060 is connected to the corresponding insulators 070 and 3#, and the corresponding insulator is connected to the (four) component suspension structure. The nanotube element 3055 is intended to be shown in Figure 29 of the nanotube element 2955. The nanotube element 3〇5s ST ^ may contain, for example, a randomly aligned SWNT, as shown, for example, in Figure 25C, Ul < SWNT 2455-2, 2455-4, 2455-5, and 2455-6, or contain the essence of μ. Parallel S WNTs on the shell, for example, are not shown in SWNT 2655-2, M55-3 and 2655-4 of Figure 27B. 201106408 In Fig. 30A, the control electrode 3〇4 having the length LEFF corresponds to the control electrode 2940 of the figure. In the 0FF state, the control electrode 3〇4 〇 奈 nanotube element 3055 is separated by a gap i having a dimension z. In the case of N-shaped L, the nano-member 3055 is in contact with the substantially parallel SWNT 3〇42, and the SWNT 3042 forms an atomic-level varnish control layer, which is thus in contact with the control electrode 3040. The discharge electrode 3045 of the insulator 3〇5 having the thickness TINS of Fig. 30A corresponds to the discharge electrode 2945 having the insulator 2950 shown in Fig. 29. Regarding the OFF to ON transition of the first non-volatile nanotube switch having the atomic layer on the control electrode, an electrostatic force of sufficient magnitude is applied to the first non-volatile naphthalene shown in FIG. 30A. The rice tube switch 3〇〇〇 structure overcomes the FELAS and switches the device 3000 from OFF to the 〇N state. The increase in nanotube element 3042 is sufficiently porous such that the Felec system is essentially the same as calculated for the first non-volatile nanotube switch 28〇〇 structure shown in Figure 28A. Because of the separation distance, the atomic power of Lennard-Jones is negligible. Therefore, the applied voltage V = 3.9 volts is the same as that calculated for Fig. 28A. The non-volatile state of the first non-volatile nanotube switch having an atomic layer on the control electrode is such that the first non-volatile 91 201106408 nanotube switch 3000 in the ON state shown in FIG. 30B is non-volatile. Operating in mode, which is maintained in the 〇N state shown in Figure 30B when the voltage is removed and felec=o, then the sum of the atomic force Fu in the Leff length portion of the elongated nanotube element 3055 Must be greater than the recovery elastic force Felas. A power comparison may be made for individual SWNTs included in the nanotube element 3055. The atomic layer and the Lennard·j〇nes format of the Val-French interaction force Fu are essentially parallel to the formation of the atomic-level Lennard_J〇nes power control layer in the elongated nanotube element 3055. The atomic level force between SWNT 3〇42 is determined. The Fu between the nanotube element 3〇55 and the control electrode 3〇4〇 is negligible because of the additional spacing as further explained below, and is essentially independent of the control element 3〇4〇 The choice of conductor or semiconductor material. Table 3 provides the FLJi formula, which contains parameter values specific to carbon atoms. Assuming that the substantially parallel SWOT 3042 forming the atomic-level Fu-force control layer has a periodicity of 5 nm, there are 32 positions for Leff=16〇nm, and 6 T in the individual SWNT3〇42 The carbon atom system is, for example, coupled to six slave atoms in individual nanotube elements 3〇55, for a total of NATOMS=192 carbon bonded pairs. The atomic level SWNT to SWNT Unnanl_J()nes force corresponding to 192 carbon atoms is calculated as FLJ = 1.5 x 10.1 〇 Newton. In the ON position shown in Fig. 27B, the net force on the individual SWNTs is Flj _ FFLAS=1.5 X ΙΟ—丨0 - 0.5 χ 1〇-ι〇=1.〇χ 1〇-丨〇 Newton . Because 〉

Felas, so the first-nonvolatile tube switch 3_ is non-volatile and is maintained in the 〇N state when the voltage V is removed (FELEC=〇). 92 201106408 The presence of an essentially parallel individual SWNT 3042 results in an increase in the spacing between the SWNT element 3055' and the control electrode 3040. For computational purposes, the hypothetical control element 3040 is a graphite' carbon-pair spacer with a spacing of 19 nm (2 X 0·45 nm carbon to carbon spacing +1.0 nm SWNT direct), and the number of carbon atoms is 532-192=340 Atom, and by using the formula in Table 3, is approximately FLJ=1.9 X 1〇-] 4 Newtons between SWNT 3055' and the graphite control element 3〇4〇. The layers of the individual SWNTs 3〇42 which are substantially parallel are introduced to reduce the FLJ between the SWNT element 3055 and the graphite control electrode 3〇4〇 by 5,000 times (l.〇x 1〇-i4) or more. This reduction of more than three levels means that the second electrode used for the control electrode 3〇4= may be changed to a variety of different conductors or semiconductors for various manufacturing methods, while in the first-non-volatile nai There is no significant change in the rice tube switch _. ... the first to the tube switch on the control electrode - ON to OFF of the tube switch - dry / in the wood / in operation ' Figure 30B shows the electrostatic force felec applied to the extended nanotube element to take advantage of the elastic force Felas "The carbon is only expected to ride Len__ force ^. ^ = Speed is further advanced - Step makes the force multiplication factor of _iG to the ON switch transition voltage, and 〇N to 〇FF to °T to (Fu-felas). s 'felec=io Electrostatic force Eelec is applied by applying voltage v to the grounding voltage (zero volts) to the signal electrodes 3060 and 3060, and the pole is 5 and the application of 93 201106408 grounding voltage to the control electrode 3〇4 Exit; ^ New Zealand people for the Ye FELec, first t. By using two series capacitors of the same area two =: i: can be calculated as follows: _ distance ^ effective dielectric constant y / ^ ^ TjNs / ^ + y. / i gate distance two half ^ _ The diameter is about 2 nm from the control electrode, and the negative is not in the case of 3G55. For example, y=37 5 nm. For =4 Γ-ΒτΤΓ^ Si〇2 ^ ^, for a formula, 0 (FLj-FELAS) = 10 x 10-IQ Newton, where the second target is _ _ the first non-volatile nanotube switch The volatilization is stable and is calculated further as described above. F bauxite U reached enough electrostatic force FELEC to overcome SWN1^ SWNT type II:. The iN estimated leaf's 0N to off switching voltage is v=6.3. The hunting introduces the essentially parallel SWNT 3042, the switching voltage ^volt has been derived from, and the essentially parallel SWNT 3〇42 η volts is estimated. Subtract) and is independent of the material selected for control electrode 3. The conductive material for the control electrode 3040 may be further listed as described above. In addition to the properties of the conductive material, the material for the control electrode 3 may also be selected 'so that the atomic level force between the substantially parallel SWNT 3Q42 and the control electrode is greater than that of the SWNT 3042 and the nanotube element 3055'. Between the atomic level of the SWNT to SWNT force, used for 94 201106408 = swNT purchase position in the switch 3_, during the operation of the switch = use the structure, size, material to control the electromechanical and atomic level force 'and borrow The device design diagram A of the first volatile nanotube switch with the additional atomic layer layer controlling the second switch = voltage corresponds to the figure 23 A ' having the atomic level layer applied to the control electrode 234 , and is shown in 〇 FF Makeup can be whistle, T. The state of the slinger tube element 3155. The nanotube element is composed of individual SWNTs of diameter "signal terminals 3160 and 3160, respectively corresponding to signal terminals 2360 and 2360 in Fig. 23A, and the system bits = the same voltage and form two terminal switches. 31 — - a terminal. The nano-manufacture member 3155 is pinned to the corresponding insulator 3, 170 and the corresponding insulator 317 0 '' by the signal electrode 一端 on one end and the corresponding insulator 3, 170 and the other end of the signal electrode 316 ' On both ends (a pin-pinned nanotube element suspension structure). The nanotube element 3155 corresponds to the nanotube element 2355 shown in Figure 23A. The nanotube element 3155 may be as "for example" The SWNT 2455-2, 2455-4, 2455-5 and 2455-6 random alignment SWNT's are shown or consist of SWNTs substantially parallel to SWNT 2655_2, 2655_3 and 2655-4 as shown in Fig. 27B. The control electrode 314 of the length lff in Fig. 31A corresponds to the control electrode 2340 in Fig. 23A. The volatile nanotube switch 31A also includes an individual SWNT 3142 that is substantially parallel to the control electrode 3140 (not included 95 201106408 f") to switch to the map for the Lennard-Jones (Fu) force at the switch 3100. In Fig. 23A), the ON position is used. ' ^ 3lB shows the atomic level control of the volatile nanotubes on the control electrode with the atomic level of the first switch of the switch to the 0N state transition to the operation, the voltage V is applied to the control IIS) is applied to Signal electrode

Ps Η; & 2 3155, which is shown in Fig. 3, is not separated from the control electrode 3140 by a distance y. During the 0FF to 〇N transition, the nanotube element is broken and removed by, for example, the distance z, and the spacing of the nanotube element MM盥 control electrode 3140 is y as shown in FIG. _ Wei Jin ^ ^ ^ is summarized in Table 1 of FELAS, Table 4 (F), Table 2 of the F dirty, and Table 3 on the atomic layer, 'and FLJ. Fu because the separation distance is negligible, and only Felec and Felas involve the diameter of the dcNT nanotube element 3155, which has the displacement distance z and the separation distance y as shown in Fig. 31B, and the electrostatic force FELEC Proportional FELAS. For this example, the individual swnt diameter dCNT = l. The forces FELAS, FELEC and Fl_j are estimated by using a one-dimensional approximation model as provided in references 1-3, and from the OFF to ON state switching voltages in references 1-3 as further explained below. The power multiplication factor of 10 is calculated. In this example, the first volatile nanotube switch 3100 has

Lsusp = 2 〇〇 nm, LEFF = 160 nm, and z = 40 nm. Since the essentially parallel SWNT 3142 layer is porous and approximately has the same voltage as the control electrode 96 201106408 3140, Felec is unchanged. In this example, the calculation is based on the size of the first volatile nanotube switch 3100 and the formulas in Tables 1 and 2 'Felas = 1 x 1 〇 10 Newtons and FELEC = 15 X 1 〇 V Newtons. The 〇fF to ON transition is produced by using a 1 〇 magnification of 'FELEc = i 〇 felas ' as described further above. The volatilization state of the first volatile nanotube switch having an atomic layer on the control electrode is such that the first volatile nanotube switch 3100 is inserted in the volatile mode as 'when the voltage is removed and Felec=〇 'Not maintained in the ON state shown in Fig. 31B, but instead returned to the 〇fF state shown in Fig. 31A, then applied to the elongated nanotube element 3155, the sum of the atomic level forces Fu must be less than the recovery elastic force. FELAS. A power comparison may be made for individual SWNTs included in the nanotube element 3155'. The Lennard-Jones format of the atomic-level van der Waals interaction force Fu is determined by the atomic level force between the elongated nanotube element 3155 and the SWNT 3142 which is essentially parallel to the atomic-level Lermard-J0nes force control layer. . The Fu force between the nanotube element 3155 and the control electrode 3040 is negligible because of the additional spacing as further explained above and is essentially independent of the choice of conductor or semiconductor material of the (4) it piece 3Η(). . Table 3 provides the formula for Flj, which contains the parameter values specific to carbon atoms. Assuming that the sub-levels of the vantage _ force control SWNT3142 have a density of 10 nm and ten ,, then for LEFF=i6〇nm 97 201106408 =» there is a total of NAT 〇 MS = 96 carbon joint pairs. 96 carbon atoms corresponding to the atomic level Swnt to SWNT Lennard-Jones force Newton. Using Felec=〇, and because Fe is=1.〇χ 1〇-ιο Newton's calculated further by the above-mentioned ten-formed Fu=0.7 χ 1〇, so in the 〇N position shown in Fig. 27B The net power on individual SWNTs is Felas _ Fu=l.〇χ ι〇-ιο _ 〇7 χ 1〇-ι〇=〇3 χ 1〇_10 Newton. Because the first non-volatile nanotube switch 3100 is therefore volatile H, there is no contribution between the nanos element 3155' and the control electrode 314A because of the additional spacing as discussed further above. The ON to OFF transition of the first volatile nanotube switch having an atomic level layer on the control electrode, because of FELAS> Fu as further described above, when V is reduced to and Felec == q , a QN to OFF state transition will occur. Off device design method

Controlling the electromechanical and original g, and force by using the selected structure, size, and material, and opening the second non-volatile nanotube with a switching operating voltage on the insulated input and output electrodes by adding an atomic layer The non-volatile (four) lower-floor non-volatile nanotube switch can be used on August 13, 2011, and the manufacturing system is described in U.S. Patent Application Serial No. 10/918,181, entitled "Nanotube Device Structure and Manufacturing Method", the application date is August 13, 2004. The four terminal device can have an output at the center of the switch and an input and discharge electrode between the output and the signal electrode, wherein the signal electrode is coupled to the nanotube channel member, which is switched to contact the output electrode in the ON state And is switched to be out of contact with the output electrode in the OFF state. Moreover, the four-terminal device can have input and discharge electrodes at the center of the switch, and a plurality of outputs between the input field and the signal electrode, wherein the signal electrode is connected to the tube channel element, which is switched to be at (10) State wheel output = :, switch to detachment and the wheel electrode in the 0FF state: The second non-volatile switch operation is determined by the design of four independent terminal switches including atomic level touch, and the atomic layer: the force of force Use the Len gambling (10) force in Table 3: Valli is out. The wheeled electrode and the output electrode (terminal) may be calculated in the form of a suspension, and the lower electrode may be at least one end or above the k-electrode contacting the nanotube channel element above the suspension channel element, and The nanotube channel element may be in a non-extended state. In the state of the coffee and the output electrode - the discharge of the money and the contact of the ^ can be extended by the edge of the '(9) balance and the output on the output terminal of the II 2:?, Μ display - a four-terminal switch structure C. = cross section of the crucible having the insulation opposite pole 3213 and the counter electrode respectively located above and below the non-volatile open card tube channel element 3215. The insulated input power, such as the 3211, 99, 201106408, and the insulated discharge electrodes 3212 and 3212, are located on opposite sides of the nano, which are used to apply the voltage input electrodes 32n and 3211 to the signal electrode 3214. 32i4|, in the insulated discharge electrodes 3212 and 3212, and the signal electrodes are applied to the channel element 3215. Signal electrode 3214 disk 214 is coupled to nanotube channel member 3215 as illustrated in Figure 32A. The switch 3 is partially buried with a dielectric material & the dielectric material 3218 is used to sew the product 3211 (4) the input electrode 3211, insulated by the dielectric material 3218, and the nanotube channel element 32丨5 is separated by a gap; the discharge electrodes 3212, 3212 are insulated from the counter electrode system by a dielectric material and are separated from the nanotube channel element 3215 by another gap. The insulator 322G and the insulator 3217 form a pinned structure of the nanotube tube 70 member 3215, and the insulator 3220 forms another one with the insulator 3217. The wheel electrode is separated from the output electrode 3213 by an insulating body input electrode 3211, which is separated from the output electrode 3213. The discharge electrode 3212 and the counter electrode are the body burn discharge electrode 3212, and the opposite electrode is insulated. 3224' °. FIG. 32B shows the second non-volatile switch 3, which has a disc insulator # 3218' as a coulomb. The substantially parallel swnt layers 3242 and 3242·' of the contact and the layer 3242" that are in contact with the output electrode. The essentially parallel drain layers 3242, welcoming, and 3242 are used to control the atomic level version (2) in the (10) state by using methods similar to those used in FIG. 201106408 Force. In this example, the lengths of the input electrodes 3211 and 3211, the discharge electrodes 3212 and 3212', the output electrode 3213, and the counter electrode 3213 were all 65 nm. For example, 3222, 3222', 3224, and 3224, the dielectric insulators of the 65 nm° nanotube channel elements 3215 have a corresponding suspension length Lsusp of 325 nm. The first non-volatile nanotube switch having an atomic level layer on the insulated input and output electrodes is turned into operation, and the output electrode 3213 and the counter electrode 3213 are in gas contact (not shown). The opposing electrostatic forces generated on the suspended nanotube channel element 3215 are not at the poles 32U and 32U in the transition from the state to (10), at voltage V, and the signal electrode 3214 is grounded (zero volts), It can make the nanotube channel components special. Zero volts' while discharge electrodes 3212 and 3212 are also at zero volt electrodes 3211 and 3211, with nanotube channel elements 3215 phantom 218^ 2〇η*"" (gap oxide), insulator oxide 3218 ^ wide ',,, Cong' is essentially parallel SWNT 3242 and 3242丨 is 1 nm _, then the elastic force W=(UX 10, Newton. = 2 2B of the second non-volatile switch 3200, the 325 nm suspension m connection In the case of the suspension structure 3215 of the Nylon tube, it is calculated by the formula of the elastic force in (4) Table 1. The formula for the Felec in the second table of the method is at the input electrode 3211, too much of the meter/channel element The interval between 3215 is about 20 dirty, the inlet & channel several pieces 3215 have individual SWNT diameter dCNT=l ιοί 201106408 Π::1, the input electrode 3211 and the length of each coffee is 65 nm' #电力FELEC,χ 10·12 V2. Please note that 'the essentially parallel diced layer is porous and does not significantly modify the electric field and the corresponding power Felec. By using FELEC=l〇FELAS=l.〇x 1〇-1 〇, V=1 85 Because the separation distance is too large, the atomic level Lennard_j〇n F. is not the cause of the transition to 0N. Atomic layer = Lennard-Jones force applied to the spacer 1 nm level. ... means having a non-volatile state of the second hierarchical layer of atoms of the non-volatile nanotube switch on the wheel human insulated electrode and an output electrode

The second non-volatile switch 32A is operated in the non-volatile mode - when the voltage v is removed and feelc = ,, it is maintained in the ON state of the figure shown in Figure 32c, and then extended. The sum of the atomic level forces on the nanotube channel element 3215 must be greater than the recovery elastic force FELAS. It may be compared to the individual SWNTs included in the nanotube element 3215. The atomic-level van der Waals interaction force Fu< Lennard J〇nes ^ is derived from the portion of the elongated nanotube element 3215, the input electrodes 3211 and 3211 that have a contribution to the atomic level Fu, and the output electrode 3213. The atomic level of force is determined. In general, the atomic level force Fu is produced in the extended nanotube element 3215, one portion (represented by LEFF_U) and substantially parallel to the SWNTs 3242, 3242, and 3242", with a spacing of less than 1 nm. For purposes of illustration, the Lennard-Jones atomic level force region of the elongated nanotube element 3215' shown in Figure 32c has been darkened. In this case, LEFF-LJ = 65 / 2 + 65 + 65 / 2 = 130 nm. For this 102 201106408

For the parallel SWNT layers 3242, 3242, and 3242, the 5 nm pitch, the number of carbon atom pairs contributing to FLj may be estimated as follows. For the SWNT pitch of LEFF-LJ=130 nm and 5 nm, which is essentially parallel, there are 26 positions with 6 carbon atoms, which are very close to Figure 32C.

Each §WNT, or Natoms=156 carbon atom pair, is displayed by a non-volatile switch 3200'. By using the formula in Table 3, Fu = 12x ΙΟ · 10 Newtons. Using Felec=〇, in the position shown in Figure 32c, the net force on the individual SWNTs is Fu_Fflas=1 2 X 1〇·ΙΟ _ 〇1 X ι〇-10=ι.ι X 1〇-10 Newton. Because Fu>Fflas, the second non-volatile switch 32001 is a non-volatile switch. The ON to OFF of the second non-volatile nanotube switch with an atomic level on the input and output private poles is converted into operation. 'About the second non-volatile switch 32〇〇, the electrostatic force Fe^ of the (10) to the brain's elastic restoring force ELAS must overcome the atomic level of the Lennard_Jones force Fu. By using the above, the same force multiplication factor of = To estimate 〇ff to ^钱, for the (10) to 0FF transition, it is necessary to "two. This, in the middle of the description, further shows white" "ELAS.1 X 1 〇 Newton, so need · 1 from ON The state is switched to the 0FF state. The LEC Newton uses the voltage V to the moon b to apply the voltage V to the discharge electrode 3212. The disk also changes to the signal electrode 3214 and the magic U, and the bean and the material are zero volts of the nanotube element 3215. , contact; and apply the grounding voltage of the axe shown in Figure 103 201106408 32D to the wheel The electrode 32ij is produced in addition to the extended nanometer f_, training' for the purpose of illustration. In addition to the darkening of the region, Fig. 32D is a nanotube element 3215 with an electrostatic force of 15' facing the plane of Fig. 32C. The electrode is at zero volts. Because the output electrode 3213 and the counter electrode 13' are also at zero volts, the opposite electrode is also in the zero-volt 4 temple 3' electrical connection (not shown in two In the part, the '1 part is _=2, and the 3211 and 3211, the nanotube element 3215, the area (the other part of the input electrode is about the nanotube element 3215, the non-flat ~ Felec-)) Representation), then 吏Felec^Felec^+i^c』., "^ area (for Felec-2 in order to calculate Felecm 'corresponds to the thickness of the interval... and the air gap to the dielectric material of the dielectric The constant, Λ1, may be calculated by assuming two devices with a spacing of 3V from the same 219: 』Series capacitance of the search area -71 ^.^liNs/^+yi /1 For the pair, the button of the insulator 3219 C_^曰> with TlNsNS j-Sl02 has s 15 fine, and for y=35 nm, η, ~ = ΐ47. 3 219^Different FeLEC·2, corresponding to the thickness of the Tins, the remaining phase of the dielectric material f ^ is the interval between the air gap and the dielectric material 3219. The dielectric constant ~ may be caused by Suppose two series of equal areas are sold as follows: y2/e«, TiNS/fws+y2'/l For '27.5 nm, the material of insulator 3219 is Si〇2 with shoulder one, rINS=l5 Nm, and for y2=27.5 nm, y2, =12 5, 104 201106408 £Λ2=].69. Calculate the Felec component F by using the M corresponding to the relative dielectric constant at 0 尺寸 and the non-volatile 〇 320〇|, and FELEC-2=n.2 X ... 2V2 Tian "EC-2, F coffee", because the heart is as above [隹J this can get FELEdi〇-12v2. The selection of the step-by-step description requires F(10)=U χ 1frl. Newton's electrostatic force is from (10) to (four) npp" ELECUxlC) Newton 1〇Ύΐ1 X ίο-]. (9) state, so 'F-=28 X "1X10 Newton' and V=6_3 volts. Sub-bank = make:: Select the structure, size, material to control the electromechanical and the original ^ straw by the additional atomic layer in the insulated wheel Although the human electrode and the insufficiency are on the second volatility setting method of setting the switching operating voltage, FIG. 33A shows the second volatile switch 33〇〇 structure, which has the properties of respectively accommodating the insulators 3318 and 3318, respectively. The upper parallel SWNT layers 3342 and 3342' and the layer 3342" near the output electrode 33' are substantially parallel to the SWNT layers 3342, 3342, and 3342" by using methods similar to those used in Figure 32. To control the atomic level Lennard-Jones force in the ON state as further explained below. In this example, the lengths of the wheeled electrodes 3311 and 3311, the output electrode 3313, and the counter electrode 3313' are all 50 nm. 3322 and 3322, the intermediate oxide is all 50 nm. The corresponding suspension length Lsusp of the nanotube channel element 3 215 is 250 nm. Figure 33A shows a discharge electrode without 3212 and 3212', for example, in Figure 32. Second volatile opening Off 3300, because the second volatile nanometer 105 201106408 tube switch 3300 will change from 〇N to 〇FF when the voltage V is removed, and does not require a discharge electrode. An alternative is to use Figure 32 and to electrically connect the discharge electrodes 3212 and 3212' to the nanotube element 3215 via signal electrodes 3214 and 3214 (not shown). This ensures that the nanotube channel elements 3215 and the discharge electrodes are in place. The zero voltage difference between 3212 and 3212, and allows the operation of the second volatile nanotube switch when combined with the size and material in accordance with the volatility operation. Atomic level on the insulated input and output electrodes第二FF of the second volatile nanotube switch of the layer to the corpse in operation, the output electrode 3313 and the counter electrode 3313 are in electrical contact (not shown) to generate a pair of suspended nanotube channel elements 3315 It is not a factor in the electrostatic force and in the transition from 〇FF to 〇N. The input electrodes 3311 and 3311 are at voltage V, and the signal electrode 3314 is 3314 at ground (zero volts). The nanotube channel element ^ is at zero volts. It is assumed that the spacing between the input electrodes 3311 and 3311 and the nanotube pass I element 3315 is 5 〇 nm (gap plus oxide), and the insulator = compound 3218 and 3218' is 3. Nm, essentially parallel SWNT 3342, =2 is 1 nm diameter, displacement Z, w15 is thin, then elastic force felas=〇_7: Xiao 2 which is pinned by using the elastic force formula in Table 1 Connected to structure 3300 for calculation. By using the formula in Table 2, the interval between the transmission and the 331 Γ盥 氺 、, s electric /, no, no channel 3315 is about 5 〇 106 201106408 nm, the nanotube channel element 3315 Diameter dcNT = 1 nm, ~ = 1, the length of each of the input electrodes 3311 and 3311' is 5 〇 nm, and the electrostatic force is 11^ <: a 7.2 parent 10\?>. By using 1^1^(:=10?£1^=7\1〇-10, V=9.85 volts. Because the separation distance is too large, the atomic level Lennard-Jones force Fu is not in the 〇FF to ON transition. One of the factors. The atomic-level Lennard-Jones force is applied at intervals of 1 nm. The volatile device state of the second volatile nanotube switch with an atomic layer on the input and output electrodes is used to make the second volatility The nanotube switch 3300 operates in a volatile mode 'when the voltage is removed and FELEC=〇 is not maintained in the ON state shown in FIG. 33B, but instead returns to the 〇 ff state shown in FIG. 33A, then The sum of the atomic level forces FLj applied to the elongated nanotube channel element 3155 must be less than the recovery elastic force Felas. It is possible to make a force comparison for the individual SWNTs in the nanotube channel element 3155, the atomic level. The Lermard-Jones format of the interaction force FL>I is derived from the atomic level force between the elongated nanotube element 3315 and the portions of the input electrodes 3311 and 331 and the output electrode 3313 which contribute to the atomic level Fu. Decided.- f, atomic layer, level Fu force: born in the extended nanotube element 3315, one part (represented by LEFF-LJ) and the substantially parallel SWNT 3342, 3342, and 3342, between, the interval is less than 1 nm. For the purposes of this description, the extended nano-levels of the Lennard-Jones atomic force region of the 3315' shown in Figure 33B have been darkened. In this example, LEFF-LJ=50/2+50+ 50/2=l〇〇nm. For: 107 201106408 The parallel parallel SWNT layers 3342, 3342' and 3342, '10 nm pitch, the number of carbon atoms contributing to FLj is Nat〇 Ms=60. By using the formula 'X ι〇_10 Newtons in Table 3. Using FElec=〇, in the on position shown in Figure 33B, the net force on the individual SWNTs is F ELAS -Flj=〇. 7 X 1〇-10 . 0.5 X 1〇-10=〇.2 x 10'10 Newton. Because of FELAS>FLj, the second volatile nanotube switch 33 is a volatile switch. The ON to OFF transition of the second non-volatile nanotube switch having an atomic layer on the electrode to the ON state transition occurs when v is reduced to zero and Felec=〇, because it is further improved as described above Steps to describe Felas>Fu. The additional method of controlling the Lennard-Jones atomic level on the SWNT to form a nanotube (channel) element, except that the atomic layer 3444 has been applied to the insulated input electrode 3411, atomic layer 3444, The input electrode 3411, which has been applied to the anode, and the atomic layer 3444, have been added to the output 3413, and the type of Fig. 34A (structure 34) is similar to that of Fig. 32A. These atomic layers are added to ensure that the atomic-level Lennard-J〇neS (FLJ) force between the elongated nanotube channel elements 3415 and the substantially parallel SWNTs 3442, 3442, and 3442" Intrinsically parallel between SWNT 3442, 3442, and 3442, and between the insulating insulation guides. Intrinsically parallel nanowires (nano rods) of various materials may be used by 〇8 201106408 to replace the essentially parallel SWNT 2942 shown in Figure 29 with the essentially parallel SWNT shown in Figure 32B Ss 3242, 3242, and , to change the atomic level of the Lennard-Jones force Fu. Nanowires (examples of nanobars are oxidized H-coded, lithosparin, gallium nitride, :, gallium phosphide, antimony, bismuth, indium phosphide, magnesium oxide, manganese oxide, nickel, palladium, Stone reversal of bismuth, titanium, zinc oxide and other types of coated nanowires such as strontium or other coated species. One of the 'essentially parallel nanowires may be used as a reticle. For example, deposited on the raft The calcium fluoride nanowire may be used as a mask jade to etch a trench in a germanium electrode having a nanometer pitch and a nanometer depth to modulate the atomic level of the Lennard_J〇nes force. It may be formed by lithography to create a nanochannel. For example, a sacrificial layer of metal may be deposited on top of the sacrificial layer to be removed later, and the sacrificial layer establishes a switching gap. Layer 3414 is then deposited on the metal. The top of the sacrificial layer is then removed. The metal sacrificial layer is then removed by an etching process to modulate the atomic Lennard-Jones force under the 3415, _3413 interface. As shown in Figure 35A (Structure 3500): Displayed without the need to use the essence In the case of parallel individual SWNT layers, the atomic level between the nanotube (channel) element 3515 and the output electrode 3513 (in this case tungsten). The nanotubes can be covalently or non-covalently The ground is derivitized to produce a varying surface (R) 3530. The tungsten surface may also be a covalently or non-covalently altered surface having a degivitization molecule or atomic layer (r*) 353i. Used to alter the interaction with the van der Waals 109 201106408 of the nanotubes. The layers 3520, 3522 and 3522 are insulating layers. For example, during the deflection of the nanotube element 3515, the weak Lennard-Jones potential system is formed. Between 3530 and 3531. At the time of the interval, the weak Lennard-Jones potential is damaged between 3530 and 3531. Regarding another example, the functional molecule or atomic layer 3530 and 3531 form a tungsten atom chemically bonded to the output electrode 3513. And chemically bonded to the carbon atom in 3515. In this case, the 'interval and Lennard-Jones force is determined by the length of the molecule or the thickness of the atomic layer 3530-3531. In addition to the tungsten output electrode 3513 has been utilized dielectric material 3519 Insulation = Input electrode 3513, in addition to the replacement, Figure 35B shows the same parent interaction as 35 A. In this case, surface functionalization is accomplished using standard chemical surface modification techniques well known to those skilled in the art. In the example, the interval between 3515 and the input electrode 3513 is determined by the combination of the molecule or the atomic layer (R*) of the can'. #3530, in addition to the other atomic layer (R**) 3531, Increasing the interval between the half of the total r, g =) the piece 3515 and the crane output electrode 3513 shows the same interaction as the 35A. Country @ has added another layer to layer »**)3535" to increase the interval between nanometer==5 and insulated input electrode 3513, • Show the same interaction 35B. Layout non-volatile and volatile nanotube switch optimization Figure 36 shows a second non-volatile nanotube switch insulated above the nanotube channel element 3215 and parallel to the port, 110 201106408 edge 3 219 A plan view 3600 of a cross section of the discharge electrodes 3212 and 3212 of the 3 200 and the counter electrode 3213' (shown in FIG. 32A). Plan view 36 〇〇 shows an individual SWNT that reduces random alignment by limiting the number of individual SWNTs in the nanotube channel elements 3215 that are in contact with signal electrodes 3614 and 3614 (corresponding to signal electrodes 3214 and 3214', respectively). The method of length change. Insulator 369 corresponds to insulator 3219 in Figure 32D. The counter electrode 3613 corresponds to the counter electrode 3213 shown in cross section in Fig. 32A. The preferred method of fabricating the plan view 3600 is similar to the preferred method of fabricating the structure 2545 described further above with respect to FIG. A preferred method exposes the ends of the selected randomly aligned individual SWNTs for contact with signal electrodes 3614 and 3614', thereby reducing length variations, which may result in the flexibility described above and in Tables 2, 3, and 3, respectively. The corresponding change of the force Felas, the electrostatic force FELEC and the atomic level force fu. Reducing the change in force caused by dimensional changes can result in better control of, for example, the switching operating characteristics of the operating voltage v. The plan view 3600 shown in FIG. 36 shows the exposed ends of the individual SWNTs 3655-2, 2655-4, 3655-5, and 3655-6, which are in electrical and physical contact with the signal electrodes 3614 and 3614', and are shown in FIG. The switching characteristics of the second non-volatile nanotube switch 3200 contribute. E.g

The additional individual SWNTs of 3655-1, 3655-3, 3655-7, and 3655-8 have two ends or at least one end that are in contact with pinned insulators 3627 and 3627 and are not, for example, second non-volatile nano Operation of the tube switch 32〇〇| 201106408 The switching characteristic of the voltage v contributes. = the electrical conductivity of the volatile nanotube switch 3300 as shown, can also be hunted by the use of the above-mentioned diagram "oil dry*"

The number of individual SWNTs in the 3330

Individual SWNT length changes for Sit alignment. The preferred method illustrated with respect to Figure 36 may be used to increase the switching vessel, e.g., operating voltage, when Γ = twin nanotube switch 3300. This Wei Jiazhi may be lying down to the discharge electrodes 3612 and 3612 with the provincial display), the structure 3_. Figure 37 shows the discharge electrodes 3212 and 3212 of the second non-volatile nanotube switch 3 insulated from the nanotube channel element and parallel to the insulator 2019, and the counter electrode 3213, Figure 32 is a plan view of the cross section taken. Plan view 3 shows a method of using individual SWNTs that are substantially parallel to eliminate variations in the length of individual SWNTs in the nanotube interface elements 3215 that are in contact with signal electrodes 3714 and 3714' (corresponding to signal electrodes 3214 and 3214, respectively). Signal electrodes 3714 and 3714 are electrically coupled to form a signal electrode 374A. Insulator 3719 corresponds to insulator 3219' in Figure 32D and is also similar to insulator 3619 in Figure 36. The counter electrode 3713 corresponds to the counter electrode 3213 shown in cross section in Fig. 32B, and is also similar to the counter electrode 3613' in Fig. 36. The preferred method of fabricating the plan view 3700 is similar to the preferred method of fabricating the structure 2735 as further described above with respect to FIG. Preferably, the method of 201106408 exposes the ends of the selected substantially parallel individual SWNTs for contact with the signal electrodes 3714 and 3714', thereby controlling the elastic forces, static electricity, which are further described above and in Tables 2 and 3, respectively. The force FELEC and the atomic level force FLi provide the number of individual SWNTi contributions. Reducing the change in force can result in, for example, switching operation of the operating voltage V. Better control. The plan view 37 shown in Figure 37 shows the exposed ends of the individual 3755-2, 3755_3 and 3755-4, which are in electrical and physical contact with the signal electrode two, and the volatile nanotubes shown in Figure 32B. Switch 3200 has a switching feature that contributes.乐—Neither the volatile nanotube switch 33〇〇 shown in Figure 33A can be used, or by using the selection and signal electrode 3314

The f^e^, iSWNT method may be used to apply to an elevation with an omission (not shown) to control the number of individual SWNTs contributing to the electrical characteristics of the volatile nanotube switch 33. Compared with the $provide method illustrated in Figure 36, it may be used to apply 5 Beans to the X &

When the voltages of V 3712, 3712 and 3740 are 3700, the switching characteristics of the operation are improved. % The device design method for creating a narrow switching gap in the non-volatile sub-switch via the non-conductive nanoparticle of the layer τ'MiTer diagrams 38A and 38B are shown corresponding to the nanotube switch 2200 shown in Fig. 22A. Simplified production of non-volatile switch 38 | | Acoustic and shown to provide a narrow (four) diagram under the nanotube element 3855, ', knot 113 201106408 structure. , 38A indicates the non-volatile switch 3_ in the ', 0FF' state, one of which has a non-extended state of the nanotube element 3855. The tube tube 3855 containing the diameter d, = other SWNT can be coated with several non- The conductivity i is not as good as 3842, and the money is placed in the horizontal (four) substrate τ 388G containing the control electrode 384 。. Or 'for example, the non-conductive nano particles can be dispersed on the substrate. We should use any semiconductor Or an insulating layer in place of the substrate. The semiconductor or insulating layer of the switch of Figures 38A-B or any of the switches described herein may even be substantially vertically positioned in a 3D structure. The substrate or any insulating system is substantially vertical. The structure of the switch can be realized. The signal electrodes 3860 and 3860' and the insulators 3870 and 3870' are used to fix the nanotube element 3855 at a certain position above the substrate 388 〇 and the control electrode 3840. The discharge electrode 3845 surrounded by the insulator 3850 is substantially shown to face the control electrode 3840. The non-conductive nanoparticle 3 842 can be provided on the nanotube element 3 8 5 5 and the control electrode 3840. An isolated stop, and may further provide a narrow switching gap 3842a across the control electrode 3840, and a portion of the nanotube element 3855 is suspended above the control electrode 3840. The switching gap 3842a is at a depth "z" The non-conductive nanoparticles 3842 are implemented, and the depth "z" is substantially equal to the diameter of the non-conductive nanoparticles 3842' and is substantially less than the corresponding switching gap depth achieved by previously known methods. . This reduced switching gap substantially reduces the switching power required to extend the position of the nanotube element 3855 into the position against the control electrode 3840. Fig. 38B illustrates the non-volatile switch 38A in the "(10)" state, which has the inner tube element 3855 in an extended state. This reduced switching interval = substantially reduces the elastic strain force present in the nanotube element 3855, which is compared to the elastic force present in a structure having a county float associated with a previously known method. In other words, the system is kept in a long-lasting cancer. For the discharge electrode 3840 and the electrode 386, the appropriate switch can return the switch 3800 to the OFF state and return the nanotube element to the non-extended state. Stone non-conductive nanoparticle 3842 can be obtained from several materials including but not limited to dioxane, oxidized IS, oxygen recording, nitrogen cutting and nitriding mosquito. Bonding to the unsupported component 3855, these methods include, but are not limited to: () during the formation of the non-tubular bath (as described above, such as the US patent for the Sen, the toilet Q224126, the system) Here, reference is made, or during the manufacture of the device proposed herein, a pre-functionalized nanoparticle having a heart consumption = surface to the nano-component is produced. Ab (2) shows the polymer entanglement on the surface of the meter element to produce a pre-existing surface which is then attached to the nanoparticles having complementary functional groups. Typical polymers used in the ear include, but are not limited to, double agglomerates, such as ionic polymers, polypeptides, and DNA. , P) The fluorination of the surface of the nanotube element to construct a sinter zone on the surface, which is attached to a chemical reticle for the cytoplasm to be attached to the surface 201106408. Eleven chemical masks can be used as positive or negative masks depending on the functional groups on the nanoparticles. (4) Nanoparticles are deposited on the electrode during manufacture, which allows the nanotube to be functionalized during subsequent processing. μ Figure 39 shows an exemplary process in which pre-functionalized non-conductive nanoparticles can be produced and coupled to the SWNT. These SWNTs coupled to the non-conductive nanoparticles can then be combined into a web element, such as depicted in Figures 38A and 38B. In the exemplary green process depicted in Figure 39, glycidol is combined with 3-aminopropyltriethoxysilane 3902 (commonly known in the industry as APTS) in the additive process. To produce a molecular structure 39〇3. The molecular structure 39〇3 undergoes a species-reduction process to produce amine terminated cerium oxide nanoparticles 3904' which becomes positively charged in the aqueous solution and easily allows adhesion to be negatively charged. Conductive nanotubes 39〇5. The area on the nanotube 3905 can be defined by selective application of a nanotube, where the nanoparticle 3904 is not adhered to the nanotube 3905. A gap similar to the 3842a shown in Figure 38A can thus be implemented. An additional functionalization mechanism for the nanotubes is set forth in U.S. Patent Application Publication No. 2005/00535, the entire disclosure of which is incorporated herein by reference. The nanoparticle 3904 may be attracted to the nanotube element 39〇5 due to the van der Waals force. These and other methods for adhering the nanoparticle structure to the nanotubes are well known to those skilled in the art. In addition, it is used to adhere the Neil granule 116 201106408 to the surface of the nanotube. So, Dali Day Ding Cheng < You Wumu and the invention have a clear ^ month should not be limited to the number of nano particles bonded to the unofficial structure selected by the special TJL in the sticky to the narrative At the end of the ^, Wang Xing people should also note that although the method of non-conductive nano particles to the conductive rice tube, but the method of Xuan Ling is not wood and /, the method is not limited to at this point. The latter 'for example, nanoparticle, · 占 占 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Yuanxiao 4 thousand soil Bu Nai is not official side. As the disclosure of the content of the game / column of the spin coating process 4004 can be scooped by the first section of the Luo Luo, the substrate component tube element 'which may be side off' Forming, for example, nano B兀仵3855, as shown in Fig. 38A. The side of the Bunet tube is first dispersed in the high-quality semiconductor: , and the fine-night side of the ruler, as described in the US Patent Application Publication No. 2008 /022·. This solution is then spin-coated—a procedure well known to those skilled in the art, in which t-substance (in this case, nanoparticle (tetra) nanotubes) is deposited on a substrate. Above - a thin and uniform layer over the substrate element 4004 to achieve a uniform single layer mesh of nanoparticle coated nanotubes. Lennard using conductive nanoparticles on non-volatile nanotube switches -Jones Atomic Level Force Control Figures 41A, 41B and 41C show non-volatile values corresponding to those shown in Figure 22A A simplified cross-sectional view of the non-volatile switch 41 of the nanotube switch 2200, and showing the structure of the effective reduced physical contact area between 117 201106408 between the nanotube element 4155 and the control electrode 4140. Figure 41A illustrates the " The non-volatile switch 41A of the OFF state has a nanotube element 4155 in a non-extended state. In Fig. 41A, a plurality of conductive nanoparticles 4142 made of, for example, but not limited to, elements of copper, aluminum, cobalt and nickel are sparsely dispersed and bonded to the substrate 418. A nanotube element 4155 comprising individual SWNTs of diameter dCNT is placed across the coated substrate element 4180, which contains the control electrode 414A. The electrodes 4160 and 4160, and the insulators 4170 and 4170, are used to secure the semiconductor element 4155 to a position above the control electrode 4140. Alternatively, the conductive nanoparticles can be bonded to the nanotube element 4155. The discharge electrode 4145 having the insulator 415A surrounded by the material 4190 is substantially opposite to the control electrode 4140. Figure 41B illustrates a non-volatile switch 41A in the 0N state with a nanotube element 4155 in an extended state. During the "〇N," state, the nanotube element 4155 is only electrically conductive. The surface of the nanoparticle 4142 is in physical contact without direct physical contact with the control electrode 414. Conductive non-rice particles 4142 provide sufficient electrical conductivity between the nanotube element 4155' and the control electrode 4140 while substantially minimizing the physical interface area. This reduced physical interface area 4175 can be used to substantially reduce the Lennard-Jones atomic level force (fu) present between the elongated nanotube element 4丨5 5 and the control electrode 4丨4 。. Proper stimulation of the discharge electrode 414 can cause the switch 4100 to return to the 〇FF state and return the nanotube element 4155 to the non-extended state. Adhesive nanoparticle 4142 is adhered to the surface of contact electrode 4140. 18 201106408 An advantage is that the electric field used to switch the nanotubes will increase due to switching contact electrodes 414 〇 4155 to an extended state. The use of "textured" electric and "textured" forms is well known to those skilled in the art, especially in the development of the EEPR(M). In addition to the car can be read-only memory, the meter tube element 4155 is switched to an extended state. The sigma of the switching gap is deep. We should note that although Figure 41a illustrates the adhesion to the remaining 4180 and the control will limit the conductive nanoparticle to this point. Indeed, the present day is on the side, but the present invention does not scatter and several conductive nanoparticles 4142 === minutes are achieved. Glycosides are not woody and the same figure = age non-volatile coffee side, which has a very narrow and side of the nanotube, the first - control electrode and the fourth electrode 4146, where the conductive nanoparticle is sticky It is connected to the substrate side ^: control electrode 4140, and is located below the second control electrode 4145 and the support 邛 4190. At least a suitable stimulus applied to one of the first or second control electrodes extends the nanotube element 4155 toward the first control electrode or the first control electrode, as shown in Figure 41C. The open relationship of Fig. 41C is a three-state switching element 'having a single "OFF" corresponding to the different extended state of the nanotube element 4155, the state and two "〇N," states. Layout design method for creating a narrow switching gap in a non-volatile nanotube switch via a non-conductive nanotube. 119 201106408 FIGS. 42A and 42B show a non-nanotube switch 2200 corresponding to that shown in FIG. 22A. A simplified cross-section of the volatile switch 42〇〇: Sexuality and display provides a narrow switching diagram below the nanotubes #4255. ' 乂 乂 * * ; ; ; ; ; ; ; ; ; ; 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ' Piece 4280, which includes control electrode 424G. A hole or space 4242a in the single layer mesh of the non-conducting = nanotube 4242 provides a switching gap above the control electrode 424G, while a portion of the nanof component milk 5 is suspended above the control electrode. The signal electrode side and the 4 shoulders and the = body 4270 are used to fix the nanotube element 4255 at a fixed position above the ^4240. The gap depth "z" in the present disclosure is substantially equal to the non-' in the single layer network 4242 and is substantially smaller than the corresponding switching gap depth that is achieved using previously known methods. The non-volatile switch 4200 in the "ΌΝ" state, the 4242a large towel field reduces the switching voltage required to extend the position of the nanotube element 425 4240, and further increases in one = in the nanotube element 4255, where y ^ is known The party correction __长4=, ^_)^ and the previous system are kept in the extension _'^ button element (4), a familiar procedure familiar to the person skilled in the art (where the material deposition 120 201106408 on the substrate The spin coating of the thin and uniform layer) establishes a single layer web of non-conductive nanotubes 4242. The single-layer network ship of 4242 is depicted as an aligned nanometer f. The maturing layer 4242 can be any non-conductive fabric with random spaces or gaps. Therefore, more than one gap may exist between the gate 4 soil 240 and the discharge electrode 4245, and the nanotube element may be extended to multiple positions of the tight control electrode. System, 42C is a simplified perspective view of the decomposition of the non-volatile switch 4. The non-conductive nanotube 4 ice suppression layer is deposited on the substrate element side as described above. A hole or space 4242a in the single layer mesh of the electrical tube 42 = provides a switching gap above the control electrode 424, while the nanotube element is located above the control electrode. For the purposes of clarity of illustration, discharge electrode 4245 and insulator 425 are not shown in Figure 42C. 42D and 42E are simplified perspective views of the first non-volatile switch 42A, respectively illustrating the switch in the OFF state (where the nanotubes are in a non-extended state) and the 0N state (wherein The nanotube element is in an extended state). As shown in Fig. 42C, for the purpose of illustration, discharge electrode 4245 and insulator 4250 are not shown in Fig. 42D and a plurality of insulated nanotube structures can be used to construct non-conductive nano-bismuth: two layers two It includes, but is not limited to, nitrided rotten "", ', metre, fluorinated single-walled carbon nanotubes and other oxide layers" nitrided nanotubes. The network can be insulated by several methods. These methods include but the county is limited by controlled exposure to reactivity = sub-meat chemistry, gas exposure, and wet chemical deformation. We should think of 'use The structure and method of insulating the nano-structures of the faces in which the conductive nanotubes are insulated are well known to those skilled in the art, and the disclosure should not be limited thereto. Indeed, the contents of the disclosure are The specific type of insulated nanotube structure used in the state is not specific to the disclosure. Thus, the disclosure should not be limited to the selection of a particular non-conductive nanotube structure. Created in a non-volatile nanotube switch Device design method for narrow switching gaps, and control of Lennard-Jones atomic level force using conductive nano particles. Figures 43A and 43B show non-volatile switches 43 corresponding to the non-volatile nanotube switch 2200 shown in Fig. 22A. The simplified cross-section of the crucible is shown and shows a structure that provides a narrow switching gap under the nanotube element 4355 and effectively reduces the physical contact area between the nanotube element 43 5 5 and the control electrode 43 40. Figure 43A A non-volatile switch 43A in a "0FF" state is illustrated, which has a nanotube element 4355 in a non-extended state. A nanotube element 4355 comprising individual SWNTs of diameter dcNT is coated with a plurality of non-conductive nai The rice particles 4342 are located across the substrate member 438, which includes the control electrode 4340. The signal electrodes 4360 and 436A, and the insulators 437A and 437A' are used to secure the nanotube element 4355 to the substrate 4380 and the control electrode. A certain position above the 4340. Conductive nanoparticle 4343 is dispersed 122 201106408 across the substrate and the control electrode, and may have a smaller diameter than the non-conductive nanoparticle. The discharge electrode 4345 of the edge 4350 is substantially opposite to the control electrode 4340. The non-conductive nanoparticle 4342 provides a _stop at the nanotube element 4355 and the control electrode 4340, and can provide a traverse control A narrow switching gap of 4340 (such as gap 4342a), and a nanotube element 4355 is located above the control electrode 4340. The switching gap 4342a is non-

4342 has a diameter substantially equal to the diameter of the non-conductive nanoparticle gamma minus the diameter of the conductive nanoparticle 4343, and is substantially smaller than the depth of the switching _depth corresponding to the previously known method. This reduced switching gap substantially reduces the switching voltage required to extend the nanof component to the position immediately adjacent to the control electrode 4340. Figure 43B „Non-volatile switch* in the state of 曰N曰

4300 returns to the 0FF state and causes the nanotube element to have an elongated tubular element in the extended position corresponding to the control electrode above the control electrode. The reduced switching gap further progressively reduces the 5 early strain forces present in the nanotube element 4355|, compared to the known method phase length, which is paid out of the extended state. Appropriate stimulation of discharge 4360' can cause switch $tube element 4355 to return to non-extended non-conductive nanoparticle 4342. 矽, alumina, titania, gas# can be included but not limited by diazotization It is realized by a plurality of materials of aluminum nitride layer 123 201106408. Device design method for creating a narrow switching gap in a non-volatile nanotube switch via a non-conductive nanotube, and control using a conductive nanoparticle Lennard-Jones atomic level force. Figures 44A and 44B are shown corresponding to the figure. A simplified cross-sectional view of the non-volatile switch 44A of the non-volatile nanotube switch 2200 shown at 22A, and showing the structure of the narrow switching gap provided below the nano-member 4455. Figure 44A illustrates a non-volatile switch 4400 in the "0FF" state having a nanotube element 4455 in a non-extended state. In Figure 44A, a single layer network of 'non-conductive nanotubes 4442 is placed. Crossing the substrate member 4480' includes the control electrode 444. The hole or space 44 in the single layer network of the non-conductive tube 4442 can provide a switching gap above the control voltage = 4440. 4455 is located above the control electrode 4440. In the gap defined by the mesh of the non-conductive nanotube, the electric nanoparticle 4443 is dispersed on the upper electrode of the substrate, and the 4460 and the insulators 4470 and 447 are used to Taiyi 4455 is fixed at a certain position above the control electrode 444. Within the state of the ^^e = valley, the gap depth is switched "z", the diameter of the non-conductive nanotube of the road 444^ Subtracting the conductive nanometer: sub-single = straight to live 'and significantly smaller than the previously known method to switch the gap depth. The corresponding figure shows the non-volatile switch side in the "0N" state, and its 124 201106408 has the nanotube element 4455' in the extended state. The reduced switching gap 4442a greatly reduces the lengthening of the nanotube element 4455 to the close Controlling the switching voltage required in the position of the electrode 4440, and further greatly reducing the elastic strain force (FELAS) present in the nanotube element 4455', compared to similar lengths associated with previously known methods, The rice tube element 4455' is held in an extended state. A spin coating process familiar to those skilled in the art, in which the material is deposited on a thin, uniform layer of the substrate, is quite suitable for establishing A single layer network of electrically conductive nanotubes 4442. The single layer network of non-conductive nanotubes 4442 is depicted as aligned nanotubes. Those skilled in the art will recognize that layer 4442 may have random spaces or gaps. Any random non-conductive fabric. Therefore, more than one gap may exist between the control electrode 4440 and the discharge electrode 4445, and the nanotube element may be extended to close control In the multiple positions of the electrodes, the following application is assigned to the assignee of the present application and is hereby incorporated by reference: U.S. Patent Application Serial No. 09/915,093, entitled "Electro-Mechanical Memory Using a Tube of Nanotubes "Arrays and methods", filed July 25, 2001, is currently US Patent No. 6,919,592; US Patent Application No. 10/850,100, "Electro-Mechanical Memory Arrays Using Nanotube Ribbons and Methods" The application date is May 20, 2004; US Patent Application No. 10/852,880, "Electromechanical Memory Arrays and Methods Using Nanotube Ribbons", application date is May 25, 2004, 125 125 201106408 曰; U.S. Patent Application Serial No. 09/915,173, "Electro-Mechanical Memory with Unit Selection Circuit Constructed Using Nanotube Technology", filed on July 25, 2002, is currently US Patent No. 6,643,165; U.S. Patent Application Serial No. 1/693,241, "Device Selection Circuit Constructed by Nanotube Technology," filed on October 24, 2003; U.S. Patent Application Serial No. 09/915,095, "U.S. Hybrid circuit", Please 1 day 2 billion billion years. July 25, saying, s

US Patent No. 6,574,130; US Patent Application No. 10/379,973, "Hybrid Circuit with Nanotube Electromechanical Memory", filed on March 5, 2003, currently US Patent No. 6,836,424; 疋 US Patent Application No. 10/964,150, "Hybrid Circuit with Nanotube Electromechanical Memory," filed on October 13, 2004. U.S. Patent Application Serial No. 10/128,118, "Nano Tube Film and Fame" was applied for April 23, 2002, and is currently US 6,706,402; ~ US Patent Application No. 10/774,682, "Nanotube Film and Products"' application for 2004 February 9曰; 'US Patent Application No. 10/776,573, "Nanotube Film and Wear" Product" applied for February 11, 2004, is currently US / Lee ^ 6,942,921; ~ US patent application No. 10/128,117, "Methods of Nanotube Films and Products"' application date is April 23, 2002, and is currently US $126 201106408 No. 6,835,591; US Patent Application No. 10/864,186, "Non-volatile Electric field effect device, circuit using the same and method of forming the same The application date is June 9th, 2004; US Patent Application No. 1〇/341,005, “Manufacturing Methods for Carbon Nanotube Films, Layers, Fabrics, Ribbons, Components and Products”, filed in 2003 January 13 曰; U.S. Patent Application Serial No. 10/341,055, "Method of Using Thin Metal Layers to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Components and Articles", filed on January 13, 2003 U.S. Patent Application Serial No. 10/34,054, "Methods of Using Preformed Nanotube Films, Layers, Fabrics, Ribbons, Components, and Articles," filed January 13, 2003; Patent Application No. 10/341,130, "Carbon nanotube film, layer, fabric, ribbon, component and article", filed on January 13, 2003; US Patent Application No. 10/917,794, "Nemi Tubular Switching Components", filed on August 13, 2004; US Patent Application No. 10/91 8,085, "Nano-tube Switching Components with Multiple Controls", filed on August 13, 2004; Patent Application No. 1〇/918,181, "Nanotube Installation Structure and Manufacturing Method" The application was filed on August 13, 2004; US Patent Application No. 60/581,075, "Non-volatile Carbon Nanotube Logic (NLOGJC) Receiver Circuit", filed on June 18, 2004, 201106408 曰; Patent Application No. 11/033,216, "Non-volatile Carbon Nanotube Logic (NLOGIC) Off-Chip Driver", filed on June 18, 2004; U.S. Patent Application Serial No. 11/032,983, "Non-Volatile Carbon Nanotube Logic (NLOGIC) Master-Slave Latch," filed January 10, 2005; and US Patent Application No. 11/032,823, "Non-volatile Carbon Nanotube Logic (NLOGJC) Three-State Circuitry "The application was issued on January 10, 2005." It is to be understood that the scope of the invention is not limited to the embodiments described above, but is defined by the scope of the following claims; 128 201106408 [Simplified illustration of the drawings] In the accompanying drawings, Figure 1 shows a schematic diagram of a conventional protection device of the prior art; Figures 2A and 2B show a cross section of a carbon nanotube resistance that may be used to replace a conventional series resistor. Figure 2C shows a schematic view of a conventional protective device having a series of carbon nanotube resistances, and Figure 3 shows a schematic view of a conventional integrated body protection device comprising a fuse that may be broken once to enable The protection device is isolated from the wafer circuit in the semiconductor wafer; Figures 4A and 4B show a cross-sectional and plan view of the structure of the non-volatile nanotube protection device; Figure 4C shows the non-volatile nanotube protection device of Figures 4A and 4B. Figure 5A shows a cross section of the non-volatile nanotube protection device shown in Figures 4A and 4B in an ON state; Figure 5B shows the activated ON non-volatile nanotube shown in Figure 5A. Figure 6A shows a cross section of the non-volatile nanotube protection device shown in Figures 4A and 4B in a non-activated (OFF) state; Figure 6B shows the non-starting (OFF) shown in Figure 6A. FIG. 7A is a plan view showing the integrated electronic component shown in FIGS. 4A and 4B, thereby contacting the non-volatile nanotube protection device of the bonding pad and the common electrode; 129 201106408 FIG. 7B shows Figure 7A is a schematic view; Figure 7C is a schematic view of Figure 7B in a startup (ON) state; Figure 7D is a schematic view of Figure 7B in a non-activated (〇FF) state;

Figure 7E shows a cross-sectional view of a non-single tube protection device 6A having a non-fourth (QFF) of a non-volatile tube device capacitance during operation of the circuit; X Figure 8A shows integration A schematic diagram of a non-volatile nanotube protection device and a power supply unit and a mode pad protection method for a wafer or package; and a schematic view showing the non-volatile nanotube protection device of FIG. 8A in an (ON) state; Figure 8C shows a schematic diagram of the non-volatile plant protection device in Figure 8A with a non-starting (〇FF) state; Figure 9Α and 9Β A schematic diagram showing a conventional technique nASa ESD model and associated esd induced current flow as a function of time; FIG. 10A shows an ESD source connected to two solder bumps (terminals) of a activated non-volatile nanotube protection device Granular electrical hybrid diagram, between the two pads is generally input, output, or input / output signal pads (terminals) Figure 10B shows the pads connected to the activated non-volatile nanotube protection device (such as signals) Solder pad) Equivalent schematic diagram of the ESD source between the ground pads, Figure 10C shows the schematic diagram of the equivalent circuit of the model 01 201106408 solder pad and ground pad connected to the activated non-volatile nanotube protection device显显科 is connected to the non-volatile nano-f protection of the starting source. The equivalent circuit of the source between the welding and the grounding of the source supply part: The equivalent circuit between the source and the soldering iron (such as the signal soldering wire) ^^^ is equivalent to the source of the electricity source (4) "(such as the starting of the non-electrical security signal welding wire)电 性 奈 奈 塾 模式 模式 模式 模式 模式 模式 模式 E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E The loss of mA makes (4) the volatile nuclei device have a muscle decoration. Only the cross-sectional view of Figure 11B; the (10) (four) version of the only fine (four) non-material silk rice bribery device u carrier Ge Θ F display does not have the wafer level and non-volatile nano tube installed! 131 201106408 A simplified cross-sectional view of a semiconductor wafer protected by a conventional protection device in parallel; ' Figure 11G shows a wafer-level protection device that does not have conventional wafer level protection at the wafer carrier level, and only a semiconductor protected by a non-volatile nanotube device Simplified cross-sectional view of the wafer\; Figure 11H shows that there is no non-volatile nanotube protection device at the wafer level, and only a non-volatile nanotube device at the wafer body level protects the wafer. FIG. 111 and FIG. 11 are simplified cross-sectional views of the card substrate of the non-volatile tube protection device attached to the card terminals; the figure shows the adhesion terminal and the connector terminal attached to the board wafer A simplified cross-sectional view of a volatile substrate (4) device read substrate; a preferred method for starting a neutral and moving non-volatile nanotube protection device associated with an electronic component such as a wafer or package; The wafer of the non-volatile nanotube protection device: Kai: placed in the system, and the non-volatile nanotube protection device is not activated to allow K 纟 叙 叙 ;; (4) (tuming, #material nanotubes = face 15; A shows that the horizontal display of the volatile nanotube protective device with typical dimensions is similar to Figure 15A but does not have a cross section of the unprotected tube; Figure 5A shows the plane 132 of the volatile na[iota] protection device shown in Fig. 15A. The view is integrated into the electronic component to contact the solder tab and the common electrode. The figure shows the schematic diagram of Fig. 16A; Figure 16B is in the startup (schematic diagram of the squeaking state; ^7 shows the integration of the wafer or the county's volatile nanotube management record between the ', the equivalent circuit schematic diagram, the two pads 四 (four) input, input Λ 'or input/output signal pad (terminal). = 'Negative tube protection device' is required; ) "Equivalent circuit of ESD source between ground pad" Supply material ^ County power supply diagram助示连# Source of the circuit schematic diagram; hairy nano-supply material (four) solder pad (• start-up schematic diagram; signal soldering) _ ESD source equivalent

Figure 19 shows an overview of the integrated 曰M protective device. 5. Simplified non-volatile nanotube protection in the installation. Figure 20 shows a schematic view of the integrated sputum device. 3. Simplified volatile nanotube protection in the flat 21A-F show a conventional technique for switching between the = state of the non-volatile nano-f switch, and the 22A.B display has a two-four (four) surface depiction; the conventional technique of the hair device _^ The three-terminal non-volatile 133 201106408 Figure 23A-B shows a three-terminal volatility device with varying nanotube suspension lengths; Figure 24 shows a conventional technical plan view of the conductive photo frame device structure; Figures 25A-C show A conventional art frame device structure for reducing the variation of the suspension length of a randomly selected individual single-walled nanotube (S WN T) selected in a nanotube element; Figures 26A-D show the selection of the reduced nanotube element Figure 7A-B shows the structure of a device for reducing the change in the levitation length of individual SWNTs selected in a substantially uniform arrangement of nanotube elements; 28A-D display has correlation Elastic force, power and atomic level Lannard-Jones force in the OFF and ON state - non-volatile nanotube switch structure; Figure 29 shows the modified conventional technique (Figure 22), three terminals The non-volatile device, '= constitutively attached to the control electrode, is essentially parallel to the = atomic level Lemiard-Jones force is determined independently of the control electrode material; Figure 30A_B shows the state in the OTF and (10) states - A non-volatile 3-off (Fig. 28) structure that attaches essentially parallel SWNTs to control so that the atomic-level Lennard_J〇nes force is determined independently of the control electrode material; the display is in the 〇FF and 〇N states— Volatile Nanotube Nose' which attaches essentially parallel SWNTs to the control electrode, 134 201106408 = Atomic level Lennankr〇nes force_record control of the bungee material and Figure 32? shows the state with 〇FF and (10) Essentially connected in parallel with the ^ electrode and the output electrode, so that the atomic level - independent of the insulating input electrode and the output electrode material; Figure 33 Α · Β _ has a clear and (10) switch structure, which will be Bless From the B electrode and the output electrode: = WNT is added to the insulated input and is determined by the insulated input and output electrode materials; the system is similar to Figure 32, except that an atomic layer has been added to improve the nature. Parallel SWNT viscous damper + shell: test input, and the input and output electrodes of the rim; 2. 丫 structure 'this atomic layer has been induced to form H = mechanical representation of R *) and nano The tube has been functionalized as the interaction of the van der Waals showing the change of S 36 and ; ί; the structure of the length of the suspension of the SWNT; Figure 37 is essentially parallel to the material of the channel element The structure of the individual SWNTs varies in length; the non-volatile nanotubes in the 0FF and 0N states open ΓνΤΓ ί conductive nanoparticles to provide shallow switching gaps; : not ''& 'Several pre-functionalized The non-conductive nanoparticle system is produced and bonded to s WKT; Figure 40 shows a spin coating process using a nanotube element coated with a nanoparticle coated 135 201106408 nanotube containing a substantially uniform layer; 41A-B shows the non-state of 0FF and 〇N Off, the money has a green button to record the reduced physical contact area between the nanotubes and the Lennard-Jones force; and the eve 41C shows the non-conducting particles with several conductive nano-particles: The second: product between the piece and the second control electrode is used to reduce the Lennard-Jones force; Figure 42A_E shows the first non-volatile telecommunication nanotube in the 0FF and (10) state, in the single layer two Figure 43A-B county g _Upper tube switch 0FF and 0N state exemplifies non-volatile Nai you +71 so ^ has several non-conducting and several conductive nano particles to provide reduced material gap and in the nanotube element and the first control "hard contact area between the electrodes to reduce the Lennard-Jones force; and Figure 44A-B翱 - celebrity long-term switch, which: the right disk is in the state of the example of non-volatile nano-features with several non-conductive A plurality of conductive nanoparticles are provided to provide a shallow 从! and a reduced contact area between the nanotube element and the first control electrode to reduce the Lennard-Jones force. 136 201106408 [Description of main component symbols] D1-D3: Insulator G1-G4: Clearance NT1, NT2: Nanotube SI, S2, S3, S4, S5: Segment

Tins: thickness Dcnt: diameter 10: protection device 12: pad 14: protected circuit 16: resistor 17: node 18: semiconductor diode 20: protection device structure 21: pad 22: conductor 24: carbon nanotube Resistor 25: Conductor 30: Overview FIG. 35B: Interaction 36: Nanotube resistance 39: Conventional structure 40: Fuse 369: Insulator 400, 400': Non-volatile nanotube protection device 411, 41Γ: Input electrode 412, 412': discharge electrodes 413, 415, 413', 415 丨: output electrodes 414, 416: opposite electrodes 417: insulating layers 418, 418': contacts 422, 422': signal electrodes 422, 424, 424' : terminals 426, 426, 428, 428,: nanotube channel elements 430, 430': nanotube channel element position 722: nanotube protection device 723: contact 724: conductors 725, 725': control electrode 726 : pads (terminals) 728 : nanotube channel elements 729 , 729 ′ : signal electrodes 137 201106408 730, 734, 738 : common conductors 732 , 736 : conductor 740 : discharge electrodes 742 : input electrodes 745 , 745 ' : contacts 750, 750', 750 ": non-volatile nanotube protection device 754: connection portion 755: output electrode 75 5': counter electrode 756: pad 757: protected circuit 760: signal electrode 762: connection portion/conductor (wiring) 764: nanotube channel element 766: discharge electrode 768: connector 770: input electrode 772: connection 775: common electrode/common conductor/common connection 780, 785: common connector 790, 790': dashed line 795: non-volatile nanotube protection device 800: wafer 810, 810', 810 ", 820, 820' , 820 ": non-volatile nanotube protection device 830, 840: pad 850: common electrode / common conductor 855: ground pad 860: common connector 865: power supply pad 870: common connector / common conductor 875: Mode Control Pad/Mode Pad 900: ESD equivalent circuit source / Human Body Model (HBM) / Equivalent Circuit 910, 920: Output Terminal 922: Capacitor 925: Resistor 930: Current 1000, 1010, 1020, 1030, 1050, 1060: Etc. 138 201106408 Effective circuit 1100: Semiconductor wafer 1101: Semiconductor substrate 1102: Protective device 1103: Conductive mounting layer 1104: Insulator 1105: Conductor 1106: Solder pad 1107: Diffusion/diffusion node 1108: Insert splicing Point 1109: Conductive Long Portion 1110: semiconductor (or hybrid semiconductor/nanotube) wafers 1112, 1122, 1133, 1142, 1168, 1184, 1195, 1195, non-volatile nanotube protection device 1Π4: device 1115: conductor 1117: pad 1118 : Conductive ridges 1120 : Semiconductor / nanotube wafer 1124 : Conductor 1126 : Pad 1128 : Conductive ridge 1130 : Only - nanotube wafer 1131 : Insulating substrate 1135 : Conductor 1136 : Pad 1140 : Wafer carrier 1141 : Substrate 1142: Nanotube protection device 1143: Conductor 1144: Pad 1145: Channel hole 1146: Terminal pad 1147: Conductive bump 1150, 1160: Electronic component 1161: Semiconductor wafer 1162: Conductive bump 1163, 1166: Solder 1165 : Conductor 1167. Inserted layer contact 1168: Nano tube protection device 1170. Electronic device and member 1171: Only-nano tube wafer 1172: Conductive ridge portion 139 201106408 1180: Electronic component 1181: Card substrate 1182: Terminal 1183 : Conductor 1190 : Board level electronic component 1191 : Board substrate 1192 : Connector 1193 : Contact pad 1194 , 1199 : Conductor 1196 : Wafer 1197 : Conductive ridge 1198 : Contact pad 1200 , 1300 , 1400 : Method 1210-12 90: Steps 1310-1350: Steps 1410-1430: Steps 1511-1516: Electrodes 1522, 1524: Signal electrode 1526: Nanotube channel elements 1590, 1590', 1590": Connections 1595, 1595X, 1622: Volt Meter protection device 1623: contact 1624: conductor 1625, 1625': output electrode 1626: pad (terminal) 1628: nanotube channel element 1629, 1629': signal electrode 1630: common conductor 1632, 1636: conductor 1638: Contact 1640: discharge electrode 1642: input electrode 1645, 1645': contact 1650, 1650': volatile nanotube protection device 1654: connector / conductor (wiring) 1655, 1655 ^ electrode 1656: pad 1657: subject Protection circuit 1660: signal electrode/common node 1662: connection portion/conductor (wiring) 1664: nanotube channel element 140 201106408 1668: conductor element 1670: element/input electrode 1675: common connector/common electrode/common conductor 1686: Electrode 1700: Wafers 1710, 1720, 1760: Volatile Nanotube Protection Devices 1730, 1740: Weld 1750: Common Connector / Common Conductor 1755: Ground Pad 1765: Power Supply Pads 1800, 1810, 1820 1840 · Equivalent circuit 1900: Wafer 1910, 1920: Non-volatile protection device structure 1915: Control electrode 1917: Nano tube element 1918: Discharge electrode 1920: Non-volatile nanotube protection device 1930, 1940: Pad 1950 Common Grounding Connector / Common Connector 1955 : Grounding Pad I960 : Common Connector / Common Mode Connector 1965 : Power Supply Pad 1975 : Mode Control Pad / Mode Pad ' 2000 . Wafer 2010, 2020, 2060 : Volatile tube protection device 2015. Control electrode 2017: Nano tube element 2030, 2040: Soldering 2050 · Common grounding connector 2055: Grounding pad 2065: Power supply part soldering station 2100-2: Local switching position 2100 : nanotube switch 2140 : control electrode 2145 : discharge electrode 2150 : insulator 2155 : SWNT fabric / nanotube element 141 201106408 2160, 2160 ': signal electrode / 2400 : plane view nanotube signal contact 2455-2, 2455 -4, 2170, 2170': Dielectric material 2455-5 ' 2455-6 : SWNT 2200 : Non-volatile nanotube 2440: Control electrode switch 2455-1, 2455-2, 2240, 2245, 2245': Electricity 2455 -3 : Nano tube Piece 2460: Conductive photo frame signal 2250, 2250': insulator pole 2255: nanotube element 2500: plane view 2260 ' 2260' >2260"> 2510 : insulator / insulator phase 2260" ': signal electrode frame 2270, 2270': insulators 2520, 2520': openings 2275, 2275': insulators 2535, 2545, 2600, 2300, 2300': first volatilization 2635: plan view nanotube switch 2560: conductive photo frame signal 2340: control electrode Pole 2355: Nanotube element 2610: Insulator/Insulator phase 2360: Conductor frame 2360, 2360': Signal electrode / 2620, 2620,, 2620π: Open signal terminal port 2360", 2360"': Signal power 2655-1, 2655-2, Pole spacing 2655-3, 2655-4, 2370, 2375: Insulator 2370": Insulator area 2655-5: SWNT 2645, 2650: Plan view 142 201106408 2655-2, 2655-3, 2655-4: Nai Meter tube 2660: frame signal electrode 2700: plan view 2710: control electrode 2725, 2725', 2725", 2725"': pinned structure 2735: plan view 2750, 275 (^: signal electrode 2800: first A non-volatile nanotube switch 2800': Switching force summary 2840: Control electrode 2845: Discharge electrode 2850: Insulator 2855: Nano tube element 2860, 2860': Signal electrode / Signal terminal 2870, 2870': Insulator 2880: Support Part 2900: Nanotube switch 2940: Control electrode 2942: SWNT 2945: Discharge electrode 2950: Insulator 2955: Nanotube element 2960, 296 (Τ: Signal electrode / Signal terminal 2970: Insulator 2970': Insulator terminal 3000: Nano Tube switch 3000': switch 3040: control element / control electrode 3042: SWNT / nanotube element 3045: discharge electrode 3050: insulator 3055, 3055': nanotube element 3060, 3060': signal electrode / signal terminal 3070, 3070 ' : Insulator 3100 : Switch 3140 : Control element / Control electrode 3155 : Nano tube element 3160 , 3160 ' : Signal electrode / 143 201106408 Signal terminal 3170 , 3170 ' : Insulator 3200 , 3200 ' : Switch 3211 , 321 Γ : Input electrode 3212 3212': discharge electrodes 3213, 3213': electrodes 3214, 3214': signal electrode 3215: nanotube channel element 3215': nanotube elements 3217, 3218, 3218·, 32 19: Dielectric material/insulator 3220, 3222, 3224: Insulator 3242 ' 3242' ' 3242 ": SWNT layer 3300 : Switch 3311, 331 Γ : Input electrode 3313 : Output electrode 3314, 3314 ': Signal electrode 3315, 3315': Nai Meter tube channel elements 3318, 3318': insulator 3400: structure 3411, 341: input electrode 3413: output 3414: layer

3415': nanotube channel element 3442, 3442', 3442" SWNT 3444, 3444', 3444": atomic layer 3500: structure · 3513: tungsten output electrode 3513': input electrode 3515: nanotube element 3520, 3522, 3522': layer 3530: atomic layer 3531: atomic layer (R*) 353Γ: atomic layer (R**) 3535"·: atomic layer (R**) 3600: plan view 3612, 3612': discharge electrode 3613 ' : counter electrode 3614, 36141 : signal electrode 3619 : insulator 3627 , 3627 ' : pin insulators 3655-2 , 2655-4 , 144 201106408

3655-5 > 3655-6 : SWNT 3700 : Plan view 3722, 3712', 3740 : Discharge electrode 3713 ' : Counter electrode 3714, 3714': Signal electrode 3719: Insulator 3740: Signal electrode 3800: Switch 3840: Electrode 3842 : Non-conductive nanoparticle 3842a: switching gap 3845 : discharge electrode 3850 : insulator 3855 : nanotube element 3855 ' : nanotube element 3860, 3860 ': electrode 3870, 3870': insulator 3880: substrate 3890: support portion 3901: glycidol 3903: molecular structure 3904: nanoparticle 3905: nanotube 4001: semiconductor grade hydrolyzate 4002: nanoparticle coated nanotube 4003: spin coating process 4004: substrate component 4100: switch 4140, 4145 4146: Electrode 4142: Conductive nanoparticle 4150: Insulator 4155, 4155': Nanotube element 4160, 4160': Electrode 4170, 4170': Insulator 4175: Physical interface region 4180: Substrate 4190: Support 4200: Non-volatile Switch 4240: Control electrode 4242: Non-conductive nanotube/single-layer mesh 4242a: switching gap/hole or 145 201106408 Space 4245: Discharge electrode 4250: Insulator 4255, 4255': Nanotube element 4260, 4 260': signal electrode 4270, 4270': insulator 4280: substrate element 4300: switch 4340: electrode 4342: non-conductive nanoparticle 4342a: gap 4343: conductive nanoparticle 4345: discharge electrode 4350: insulator 4355: nanotube Element 4360, 4360': electrode 4370, 4370': insulator 4380: substrate 4400: non-volatile switch 4440: control electrode 4442: non-conductive nanotube / single layer net 4442a: gap 4443: conductive nanoparticle 4445: discharge Electrodes 4545, 4455': nanotube elements 4460, 446 (V: signal electrodes 4470, 4470': insulator 4480: substrate element 146

Claims (1)

201106408 VII. Patent application scope: L~ kinds of nano tube switch, comprising: a substrate; a first electrode and a second electrode; located in the first and the second plurality of non-conductive nano particles, located at 5 _=—the gap 'f the gap nanoparticle: 疋 throughout the electrode and the complex: a tube substrate, the control gas connection = the first - and the second electrode; / "in the care of the cattle system A fairy is applied to at least one of the first and the - and the "stimulus" of the control electrode, and the control electrode can be deflected to contact the control electrode via the gap. 2. The nanotube switch of claim 1, wherein the two switch elements are adapted to be applied to the first and second electrodes and the electrical stimulation source of the control electrode , ^ switches between the state and a startup state. 3. The nanotube switch of claim 2, further comprising a discharge electrode substantially opposite the control electrode, wherein the switching element is adapted to be applied to the first and second At least one of the electrodes and an electrical stimulation source of the discharge electrode switch between the activated state and the non-activated state. 4. The nanotube switch of claim 3, further comprising an insulator covering at least a portion of the discharge electrode 147 201106408 along a surface adjacent to the switching element. 5. If the scope of the patent application is 4th, the nanotubes are opened _ riding volatile / Suayi materials, which is 6. If the scope of application of the patent range j is negative, the relationship between the nanotubes is volatile. The "official switch" wherein 7. the nanotubes are single-walled nanotubes as described in the scope of the patent application. The river is not the official switch, of which 8. The utility model relates to a multi-walled nano tube. The tube switch according to the above item 1, wherein the non-conductive non-particles support the switching element. 10. A type of nanotube switch, comprising a substrate; a first electrode and a second electrode; between the first electrode and the second electrode; = conductive nanoparticle 'on the substrate; and an electrode tube located on the substrate, the control electrode The device is adapted to be applied to the first-and second-direction control electrodes to contact the conductive nano-particles and to deflect the nanotube switch according to item 10 of the second and second ranges. Switching between a non-activated state and an activated state in response to at least one of the first and second electrodes 148 201106408 and the electrical stimulation source of the control electrode. The tube switch according to item 11, Included as a discharge electrode, substantially on the opposite side of the control electrode, wherein the switching element is in response to being applied to at least one of the first and second electrodes and an electrical stimulation source of the discharge electrode 13. The switching of the non-activated state. The nanotube switch of claim 12, further comprising an insulator covering at least a portion of the discharge electrode along a surface adjacent to the switching element. 14. The nanotube switch of claim 13, wherein the nanotube relationship is non-volatile. 15. The nanotube switch of claim 10, wherein the nanotube switch The tube-opening relationship is volatile. 16. The nanotube switch according to claim 10, wherein the nanotubes are single-walled nanotubes. The nanotube switch, wherein the nanotube is a multi-walled nanotube. 18. A nanotube switch comprising: a substrate; a first electrode and a second electrode; a control electrode, located The first and the Between the two electrodes; a first plurality of conductive nanoparticles disposed on the substrate; and a switching element comprising a plurality of nanotubes is located in the substrate, the control 149 201 106 408 a discharge electrode, located above the switching element, substantially opposite the control electrode 1 'the discharge electrode has a surface adjacent to the switching element; and ▲ a second plurality of conductive nano particles, bonded to the switch a surface of the far discharge electrode adjacent to the component; wherein the switching element is adapted to be applied to at least one of the first and second electrodes and an electrical stimulation source of the control electrode; The electrode switches between a non-activated state and a -first state; wherein the S-switching element is adapted to be applied to at least one of the first and second electrodes and an electrical stimulus source of the discharge electrode, And deflecting to the δ-Hay discharge electrode to switch between the non-activated state and a second activated state. The semiconductor tube switch comprises: a substrate; a first electrode and a second electrode; a control electrode Between the first and the second electrode; a plurality of non-conductive nanotubes on the substrate, wherein the non-conductive nanotubes define at least one gap in the control Above the electrode, in the at least one gap, there is no non-conductive nanotube; a switching element comprising a plurality of conductive nanotubes, located above the substrate, the control 'electrode and the plurality of non-conductive nanotubes Wherein the opening 150 201106408 is electrically connected to the first and second electrodes; and wherein the switching element is adapted to be applied to at least one of the first and second electrodes and the control electrode A source of stimulation is deflectable toward the control electrode to contact the control electrode via the at least one gap. 20. The nanotube switch of claim 19, wherein the switching element is adapted to be applied to at least one of the first and second electrodes and the electrical stimulation source of the control electrode Switch between a non-start state and a start state. 21. The nanotube switch of claim 20, further comprising a discharge electrode substantially opposite the control electrode, wherein the switching element is applied to the first and second electrodes At least one of the electrical stimulation sources of the discharge electrode is switched between the activated state and the non-activated state. 22. The nanotube switch of claim 21, further comprising an insulator covering at least a portion of the discharge electrode along a surface adjacent the switching element. 23. The nanotube switch of claim 22, wherein the nanotube opening relationship is non-volatile. 24. The nanotube switch of claim 19, wherein the nanotube opening relationship is volatile. 25. The nanotube switch of claim 19, wherein the nanotubes are single-walled nanotubes. 26. The nanotube switch of claim 19, wherein the nanotube is a multi-walled nanotube. The nano-f switch of claim 19, wherein the plurality of non-conductive nanotubes support the switching element. 28. A nanotube switch comprising: a substrate; a first electrode and a second electrode; a control electrode between the first and the second electrode; and a plurality of non-conductive nanoparticles located at Above the control button, the conductive material is not charged with a plurality of conductive nano particles, located on the substrate and in the gap; & opening, the component comprising a plurality of nanotubes located on the substrate, the control a plurality of non-conductive nano particles and a plurality of conductive nanometers 1 above, wherein the switching element is electrically connected to the first and the first electrode; and wherein the switching element is adapted to be An electrical stimulation source applied to the first and second poles and to the control electrode, and deflectable to the control pole 1 'read by the contact with the electron nanoparticle. The nanotube switch of claim 28, wherein the switch element is applied to the first and second electrodes, and the electrical stimulation source of the control electrode And switch between a non-start state and a start state. 30. The switch as described in claim 29, wherein the third discharge electrode is substantially on the opposite side of the control electrode, wherein the switch element is applied to the first and the first At least one of the two electrodes and an electrical stimulation source of the discharge electrode are switched between the (four) state and the non-activated 152 201106408 dynamic state. 31. The nanotube switch of claim 30, further comprising an insulator covering at least a portion of the discharge electrode along a surface adjacent the switching element. 32. The nanotube switch of claim 31, wherein the nanotube opening relationship is non-volatile. 33. The nanotube switch of claim 28, wherein the nanotube opening relationship is volatile. 34. The nanotube switch of claim 28, wherein the nanotubes are single-walled nanotubes. 35. The nanotube switch of claim 28, wherein the nanotubes are multi-walled nanotubes. 36. The nanotube switch of claim 28, wherein the non-conductive nanoparticle supports the switching element. 37. A nanotube switch comprising: a substrate; a first electrode and a second electrode; a control electrode between the first electrode and the second electrode; and a plurality of non-conductive nanotubes located at the On the substrate, wherein the non-conductive nanotubes define at least one gap above the control electrode, in the at least one gap, there is no non-conductive nanotube; a plurality of conductive nano particles are located on the substrate and a switching element, comprising a plurality of conductive nanotubes, located on the substrate, the control electrode, the plurality of non-conductive nanotubes and the plurality of conductive 153 201106408 nano particles, wherein the switching element Electrically coupled to the first and second electrodes; and wherein the switching element is deflectable toward the electrical stimulus source applied to at least one of the first and second electrodes and the control electrode The electrode is controlled to contact the conductive nanoparticles via the at least one gap. 38. The nanotube switch of claim 37, wherein the switching element is adapted to be applied to at least one of the first and second electrodes and the electrical stimulation source of the control electrode Switch between a non-start state and a start state. 39. The nanotube switch of claim 38, further comprising a discharge electrode substantially opposite the control electrode, wherein the switching element is adapted to be applied to the first and second electrodes At least one of the electrical stimulation sources of the discharge electrode is switched between the activated state and the non-activated state. 40. The nanotube switch of claim 39, further comprising an insulator covering at least a portion of the discharge electrode along a surface adjacent the switching element. 41. The nanotube switch of claim 40, wherein the nanotube opening relationship is non-volatile. 42. The nanotube switch of claim 37, wherein the nanotube opening relationship is volatile. 43. The nanotube switch of claim 37, wherein the nanotubes are single-walled nanotubes. 154 201106408 44. The nanotube switch of claim 37, wherein the nanotubes are multi-walled nanotubes. 45. The nanotube switch of claim 37, wherein the non-conductive nanotube supports the switching element. 155