201105818 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種於基板之主表面上使薄膜氣相成長或 者真空4鍍之成膜裝置，本發明更特定地係關於一種於半 導體基板之主表面上使薄膜成膜時，控制半導體晶圓之主 表面因加熱而彎曲之成膜裝置。 【先前技術】 於基板、例如半導體基板之一方之主表面上，為了形成 半導體元件而使薄膜成長時，通常係使用如下方法：一面 加熱-面使半導體基板之一方之主表面上暴露於構成要形 成的薄膜之原料氣體中。作為原料氣體’例如可使用作為 陽離子之m族氮化物半導體之有機金屬化合物、或作為陰 離子之3有V知兀素之原料氣體。藉由將該等原料氣體供 給至加熱後之半導體基板之主表面上’而使薄膜於半導體 基板之一方之主表面上成長。 此處，作為加熱半導體基板之方法，先前以來，如「出 族氮化物半導體」（非專敎獻1)所*，例如存有RF(radi0 frequency ’射頻）加&、電阻加熱、紅外線燈加熱等方 、'字使用上述原料氣體（氣相）而於加熱後之半導體基板 上使薄膜成長之技術稱作氣相成長，用以進行氣相成長之 裝置八備阳座，該晶座作為安放半導體基板、且加熱半導 體基板之構件。於非專利文獻1中所揭示之加熱半導體基 板之方法’均係於晶座上安放要加熱的半導體基板。 圖6係表示先前以來所使用之利用氣相成長之成膜裝置 142497.doc 201105818 卩概要的概略圖。如圖6所示，先前以來所使用之利 7氣相成長之成膜裝置⑽相對於用以安放基板、例如半 V體基板1G之晶座i之主表面方向而於下側（圖6中，係與 安放半導肢基板1 〇之側為相反側之與主表面相對向之方 向），具備作為加熱構件之加熱器2。#，自晶座i之下侧 加熱晶座!及半導體基板1〇。並且’於晶座!之上側(圖6 中，係與安放半導體基板10之側相對向之方向），設置有 用以抓動原料氣體之流道3。一面由加熱器2加&晶座工及 其上之半導體基板1〇，一面自設置於流道3之一方之端部 (上游側）的原料氣體噴嘴4，肖流道3之内部流入構成要成 膜之薄膜的原料氣體，並使半導體基板1〇之一方之主表面 二圖6所不之上側之主表面)處於能夠暴露該原料氣體之狀 態。如此，於經加熱之半導體基板1〇之主表面上，使由所 供給之原料氣體構成之薄膜成膜。此時，可使用自設置於 成膜裝置100之内部之頂部（上側）之模組5所照射之雷射 光’而測疋下述半導體基板1G之曲率、即沿半導體基板W 之主表面之方向相關之彎曲程度。 又’於「處理商品」（非專利文獻2)中，利用資料來表 示作為半導體基板之晶圓即便僅升溫亦會產生相當之翹曲 (彎曲半導體基板之翹曲係由於半導體基板之升溫產生 之熱之流動引起半導體基板之上下側出現溫度差而產生 者。 先前技術文獻 非專利文獻 142497.doc 201105818 非專利文獻1 :赤崎勇編，「III族氮化物半導體」，培風 館，1994年，P.147-165 非專利文獻2 ·「處理商品」，[oniine]，丸文股份有限公 司’[平成20年3月17曰檢索]，網際網路<http://www.marubun.jp/ product/thinfilm/other/qgcl8e0000000db3.html> 【發明内容】 '發明所欲解決之問題 於用以使上述薄膜成長之成膜裝置中，作為安放半導體 基板、並加熱半導體基板之構件之晶座，現狀係於晶座之 上側安放要使薄膜成長之半導體基板，並於晶座之下側設 置有用以加熱晶座之加熱器β並且，藉由利用加熱器自下 側來加熱晶座，而加熱設置於晶座之上側之半導體基板。 而且，使用在半導體基板之上側流動構成要形成之薄膜之 原料氣體的方法。再者，於面朝下（face d〇wn)之情形時， 上下與上述情形相反。即，於晶座之下側安放要使薄膜成 長之半導體基板，於晶座之上側設置有用以加熱晶座之加 熱器。並且，藉由利用加熱器自上側加熱晶座，而加熱設 -置於aa座之下側之半導體基板。而且，使用在半導體基板 之下側流動構成要形成之薄膜之原料氣體的方法。 於以上之情形、例如於晶座之下側設置有加熱器之情形 時’加熱器之熱係自晶座之下側傳遞至上側，並自安放於 晶座之上側之半導體基板之下側傳遞至上側。進而，藉由 向半導體基板之上方之輻射、或向原料氣體之傳熱而使熱 流動。如此’於相對於半導體基板之主表面方向上之上下 142497.doc 201105818 間會出現溫度差。因此，作為半導體基板之晶圓於沿主表 面之方向上會產生翹曲（彎曲）。於晶座之下側設置有加熱 态之情形時，由於晶圓之下側之溫度較上側之溫度高，因 此以晶圓之下側凸起（朝下凸起）之方式而產生翹曲。又， 例如，如面朝下之情形般，當於晶座之上側設置有加熱器 之情形時，由於晶圓之上側之溫度較下側之溫度高，因此 以晶圓之上側凸起（朝上凸起）之方式而產生翹曲。 作為半導體基板之晶圓若其主表面上成長彳薄膜之正中 產生翹曲，則晶圓之主表面與晶座之接觸情況會因晶圓之 主表面上之位置而不同。例如，於晶座之下側設置有加熱 -而使B曰圓以朝下凸起之方式產生翹曲之情形時，晶圓之 主表面之中央附近與晶座接觸，但隨著接近主表面之邊緣 部，而晶圓與晶座之距離變大。因此，於該情形時，晶圓 之中央邛刀之溫度較晶圓之邊緣部之溫度高。如此，由於 曰曰圓之主表面上產生溫度分布’故存在晶圓上成長之薄膜 之均質性劣化之情形。 又’根據於作為半導體基板之晶圓之主表面上成長之薄 膜的種類’例如於邦〇基板之主表面上使氮化鎵（⑽）氣 成長之it形時等，若成膜後之晶圓之麵曲（朝下凸起之 〜曲)曰艾大’則存在晶圓產生龜裂之情形。如上所述，由 二沿晶圓之主表面之方向在上側與下側之間產生熱之移動 或溫度差，故存在產生晶圓之趣曲、均質性之劣化、、有時 會產生龜裂之問題之情形。 本發月係馨於為解決上述問題研製而成者，其目的在於 142497.doc 201105818 提供一種成膜裝置，於半導體基板之主表面上使薄膜成膜 時控制半導體基板之主表面因加熱而彎曲。 解決問題之技術手段 本發明之成膜裝置具備：晶座，其保持基板；第丨加熱 構件其以與晶座之一方之主表面相對向之方式而配置； 第2加熱構件，其以與位於與晶座之一方之主表面為相反 側的他方之主表面相對向的方式而配置；以及控制部，其 可獨立地控制第丨加熱構件及第2加熱構件各自之加熱溫 度。 · 藉由使用如上所述具備以與晶座之一方之主表面相對向 之方式而配置的第丨加熱構件、以及以與位於與晶座之一 方之主表面為相反側的他方之主表面相對向的方式而配置 之第2加熱構件的成膜裝置，安放於晶座之一方之主表面 半V體基板，可藉由加熱構件而自上側與下側此兩側 進行加熱。如此，與僅於半導體基板之上側或下側之任一 方"X置加熱構件而加熱之情形相比，上側與下側之溫度差 變小。因此，與僅於半導體基板之上側或下側之任—方設 置加熱構件而加熱之情形相比，可減小於半導體基板上使 薄膜成長時之翹曲之量。又’藉由減小半導體基板之上側 與下側之溫度差，並減小半導體基板之翹曲的量，可提高 半導體基板之溫度均勻性，使成膜後之薄膜遍及半導體基 板之整個主表面而大致均質化。 .又，本發明之成膜裝置具備：晶座，其保持基板；第i …、構件，其以與晶座之一方之主表面相對向之方式而配 142497.doc 201105818 置，·第2加熱構件，其以與位於與晶座之一方之主表面為 相反側之他方的主表面相對向的方式而配置；以及、控制 部’其可獨立地控制第！加熱構件及第2加熱構件各自之加 熱溫度，但可僅使第1加熱構件及第2加熱構件之其中一方 加熱’亦可使兩方加熱。即，即便本發明之成膜裝置僅使 第！加熱構件或第2加熱構件中之卜方加熱，亦具有實現 良好的成膜之能力。因此，可任意地控制成膜裝置之内部 中之熱之流動。 又’藉由減小半導體基板之翹曲，可減小半導體基板產 生龜裂之可能性。進而，藉由相對於半導體基板之主表面 方向而以與-方及他方此兩方之主表面相對向之方式來配 置加熱構件’可使與半導體基板之主表面相對向之環境中 之原料氣體的、因溫度差而產生之濃度梯度變小，並且可 抑制原料氣體之對流之產生。因此’可提高經成膜之薄膜 之膜質。 ' 又，本發明之成膜裝置進而具備測定基板之曲率或翹曲 之測定部，亦可進而具備如下功能：根據測定基板之曲率 或翹曲後之結果，藉由控制部而獨立地控制第1加熱構件 及第2加熱構件各自之加熱溫度。藉由具備如上所述之功 能’可—面即時測定半導體基板之曲率之量及方向，—面 由控制°卩將該測定結果反饋至第1加熱構件及第2加熱構 件，攸而可即時地控制第1加熱構件及第2加熱構件之溫 度以減小半導體基板之曲率。由於只要減小曲率便可減 J L曲故藉由以上可進而減小半導體基板之勉曲。又， 142497.doc 201105818 例如亦可使用雷射 亦可代替上述曲率 代替測定成膜中之半導體基板之曲率， 光來測定成膜中之半導體基板之翹曲， 而使用起曲來進行控制。 於本發明t，係使用上述晶座及加熱構件而進行半導體 基板之加熱，一面加熱一面向半導體基板之一方之主表面 上供給構成要形成的薄膜之成分之原料氣體。藉由使用如 此之方法（氣相成長），可形成結晶排列於半導體基板之晶 面上整齊之高品質的薄膜。作為用於上述方法(氣相成長) :原料氣體’例如亦可使用氯化物氣體、或非金屬材料之 氫化物氣體。或者’亦可使用有機金屬化合物之蒸汽。 又’亦可使用如下之利用真空蒸鍍之方法：即-面使用 上述晶座及加熱構件來加熱半導體基板，_面使基板之一 方之主表面上要歧的、例如構成πι族氮化物半導體之薄 膜之成分的蒸汽於真空中堆積。藉由使用該方法可使成 腠之速度變慢、或者-面成膜-面當場觀察薄膜。 發明之效果201105818 VI. Description of the Invention: [Technical Field] The present invention relates to a film forming apparatus for vapor-phase growing or vacuum-coating a thin film on a main surface of a substrate, and more particularly to a semiconductor substrate When a film is formed on the surface of the main surface, a film forming apparatus that controls the main surface of the semiconductor wafer to be bent by heating is controlled. [Prior Art] When a thin film is grown on a main surface of a substrate, for example, a semiconductor substrate, in order to form a semiconductor element, a method of heating a surface to expose a main surface of one side of the semiconductor substrate to a constituent is usually used. In the raw material gas of the formed film. As the material gas, for example, an organometallic compound of a m-type nitride semiconductor as a cation or a material gas of a V-agroin which is an anion of 3 can be used. The film is grown on the main surface of one of the semiconductor substrates by supplying the material gases to the main surface of the heated semiconductor substrate. Here, as a method of heating a semiconductor substrate, for example, "existing nitride semiconductor" (not exclusively) 1 includes, for example, RF (radio frequency "radio frequency" plus & resistance heating, infrared lamp The technique of heating the film by using the above-mentioned source gas (gas phase) and heating the film on the semiconductor substrate after heating is referred to as vapor phase growth, and the device for performing vapor phase growth is used as a device for the gas phase growth. A member for mounting a semiconductor substrate and heating the semiconductor substrate. The method of heating a semiconductor substrate disclosed in Non-Patent Document 1 is to place a semiconductor substrate to be heated on a crystal holder. Fig. 6 is a schematic view showing an outline of a film forming apparatus 142497.doc 201105818, which has been used in the past. As shown in FIG. 6, the film forming apparatus (10) which has been used for the vapor phase growth has been used on the lower side with respect to the main surface direction of the crystal substrate i for mounting the substrate, for example, the half V body substrate 1G (FIG. 6). The heater 2 is provided as a heating member, in a direction opposite to the main surface on the side opposite to the side on which the semiconductor substrate 1 is placed. #, Heating the crystal holder from the lower side of the crystal holder i! and the semiconductor substrate 1〇. Further, on the upper side of the crystal holder (the direction opposite to the side on which the semiconductor substrate 10 is placed in Fig. 6), a flow path 3 for gripping the material gas is provided. The raw material gas nozzle 4 provided on one end (upstream side) of one of the flow paths 3 is supplied from the heater 2 and the semiconductor substrate 1 on the side of the flow path 3, and the internal flow of the Xiao flow path 3 is formed. The material gas of the film to be formed is formed such that the main surface of the main surface of the semiconductor substrate 1 is not exposed to the material gas. Thus, a film made of the supplied source gas is formed on the main surface of the heated semiconductor substrate 1A. At this time, the curvature of the semiconductor substrate 1G, that is, the direction along the main surface of the semiconductor substrate W, can be measured using the laser light 'irradiated from the module 5 provided on the top (upper side) inside the film forming apparatus 100. The degree of bending associated. Further, in the "processed product" (Non-Patent Document 2), it is indicated by the data that the wafer as the semiconductor substrate is warped even if only the temperature is raised (the warpage of the curved semiconductor substrate is caused by the temperature rise of the semiconductor substrate). The flow of heat causes a temperature difference to occur on the lower side of the semiconductor substrate. Prior Art Document Non-Patent Document 142497.doc 201105818 Non-Patent Document 1: Chisaki Yongbian, "Group III Nitride Semiconductor", Pei Feng Museum, 1994, P. 147-165 Non-Patent Document 2 · "Processing Products", [oniine], Maruwen Co., Ltd. [Searching for March 17th, 2013], Internet <http://www.marubun.jp/ product/ Thin film/other/qgcl8e0000000db3.html> [Invention] The problem to be solved by the invention is that in a film forming apparatus for growing the above-mentioned film, a crystal holder which is a member for mounting a semiconductor substrate and heating the semiconductor substrate is currently a semiconductor substrate on which the film is grown is placed on the upper side of the crystal holder, and a heater β for heating the crystal seat is disposed on the lower side of the crystal holder, and by using a heater The side is heated to heat the crystal holder, and the semiconductor substrate disposed on the upper side of the crystal holder is heated. Further, a method of flowing the material gas constituting the film to be formed on the upper side of the semiconductor substrate is used. Further, face down (face d〇wn In the case of the above, the upper and lower sides are opposite to the above case, that is, a semiconductor substrate on which the film is to be grown is placed on the lower side of the crystal holder, and a heater for heating the crystal holder is provided on the upper side of the crystal holder. The crystal holder is heated from the upper side, and the semiconductor substrate placed under the aa seat is heated. Further, a method of flowing a material gas constituting a film to be formed on the lower side of the semiconductor substrate is used. In the above case, for example, crystal When the heater is disposed on the lower side of the seat, the heat of the heater is transmitted from the lower side of the crystal holder to the upper side, and is transmitted to the upper side from the lower side of the semiconductor substrate placed on the upper side of the crystal holder. Radiation above the semiconductor substrate or heat transfer to the material gas causes heat to flow. Thus 'between 142497.doc 201105818 in the direction of the main surface of the semiconductor substrate There is a temperature difference. Therefore, the wafer as the semiconductor substrate is warped (bent) in the direction along the main surface. When the heating state is set on the lower side of the crystal holder, the temperature on the lower side of the wafer The temperature is higher than that of the upper side, so warpage occurs in such a manner that the lower side of the wafer is convex (projecting downward). Further, for example, as in the case of face down, a heater is provided on the upper side of the wafer holder. In the case where the temperature on the upper side of the wafer is higher than the temperature on the lower side, warping occurs in such a manner that the upper side of the wafer is convex (projected upward). The wafer as the semiconductor substrate is on the main surface. When the film is grown in the middle of the growth of the film, the contact between the main surface of the wafer and the wafer is different depending on the position on the main surface of the wafer. For example, when heating is provided on the lower side of the crystal holder, and the B-circle is warped in a downward direction, the vicinity of the center of the main surface of the wafer is in contact with the crystal holder, but as the main surface is approached The edge portion and the distance between the wafer and the crystal seat become larger. Therefore, in this case, the temperature of the central trowel of the wafer is higher than the temperature of the edge portion of the wafer. As a result, the temperature distribution on the surface of the main circle is reduced, so that the homogeneity of the film grown on the wafer deteriorates. Further, 'the type of the film grown on the main surface of the wafer as the semiconductor substrate', for example, when the gallium nitride ((10)) gas is grown in the shape of the main surface of the substrate, if the film is formed, The round face song (the bulge that is raised downwards) is a case where the wafer is cracked. As described above, since the movement or temperature difference between the upper side and the lower side occurs in the direction of the main surface of the wafer, there is a possibility that the wafer is deteriorated in homogeneity, homogeneity, and cracking sometimes occurs. The situation of the problem. The present invention is developed to solve the above problems, and its purpose is 142497.doc 201105818. A film forming apparatus is provided for controlling the main surface of a semiconductor substrate to be bent by heating when a film is formed on a main surface of a semiconductor substrate. . Means for Solving the Problem A film forming apparatus of the present invention includes: a crystal holder that holds a substrate; and a second heating member that is disposed to face a main surface of one of the crystal holders; and a second heating member that is located It is disposed in such a manner as to face the other main surface on the opposite side of the main surface of the crystal seat; and a control portion that can independently control the heating temperatures of the second heating member and the second heating member. And by using the second heating member disposed to face the main surface of one of the crystal mats as described above, and to be opposite to the main surface of the other side opposite to the main surface of one of the crystal mats The film forming apparatus of the second heating member disposed in the manner of being placed on the main surface half V-body substrate on one of the crystal holders can be heated from the upper side and the lower side by the heating member. As described above, the temperature difference between the upper side and the lower side becomes smaller as compared with the case where only one of the upper side or the lower side of the semiconductor substrate is heated by the heating member. Therefore, the amount of warpage when the film is grown on the semiconductor substrate can be reduced as compared with the case where the heating member is provided only on the upper side or the lower side of the semiconductor substrate. Moreover, by reducing the temperature difference between the upper side and the lower side of the semiconductor substrate and reducing the amount of warpage of the semiconductor substrate, the temperature uniformity of the semiconductor substrate can be improved, and the film after film formation is spread over the entire main surface of the semiconductor substrate. And roughly homogenized. Further, the film forming apparatus of the present invention includes: a crystal holder that holds the substrate; and a member that is disposed so as to face the main surface of one of the crystal holders, 142497.doc 201105818, and the second heating a member disposed in such a manner as to oppose the other main surface on the opposite side to the main surface of one of the crystal holders; and the control portion 'which can independently control the first! The heating temperature of each of the heating member and the second heating member may be heated by heating only one of the first heating member and the second heating member. That is, even the film forming apparatus of the present invention only makes the first! The heating of the heating member or the second heating member also has the ability to achieve good film formation. Therefore, the flow of heat in the inside of the film forming apparatus can be arbitrarily controlled. Further, by reducing the warpage of the semiconductor substrate, the possibility of cracking of the semiconductor substrate can be reduced. Further, by arranging the heating member 'with respect to the main surface of the semiconductor substrate so as to face the main surfaces of the square and the other side, the material gas in the environment facing the main surface of the semiconductor substrate can be made The concentration gradient due to the temperature difference becomes small, and the convection of the material gas can be suppressed. Therefore, the film quality of the film formed can be improved. Further, the film forming apparatus of the present invention further includes a measuring unit that measures the curvature or warpage of the substrate, and further has a function of independently controlling the control unit based on the curvature of the measuring substrate or the result of the warpage. 1 heating temperature of each of the heating member and the second heating member. By measuring the amount and direction of the curvature of the semiconductor substrate with the function 'surface as described above, the surface is controlled by the control 卩, and the measurement result is fed back to the first heating member and the second heating member. The temperature of the first heating member and the second heating member is controlled to reduce the curvature of the semiconductor substrate. Since the curvature can be reduced as long as the curvature is reduced, the distortion of the semiconductor substrate can be further reduced by the above. Further, for example, 142497.doc 201105818 may be used instead of the above curvature instead of measuring the curvature of the semiconductor substrate in the film formation, and the warpage of the semiconductor substrate in the film formation may be measured by light, and the control may be performed using the curve. In the present invention, the semiconductor substrate is heated by the above-described crystal holder and the heating member, and a material gas which is a component constituting the film to be formed is heated on the main surface facing one of the semiconductor substrates. By using such a method (vapor phase growth), it is possible to form a film of high quality which is crystallized and arranged on the crystal surface of the semiconductor substrate. As the above method (vapor phase growth): the source gas 'e., for example, a chloride gas or a hydride gas of a non-metal material may be used. Alternatively, steam of an organometallic compound can also be used. Further, a vacuum evaporation method may be used in which the semiconductor substrate is heated by using the above-mentioned crystal holder and the heating member, and the surface of one of the substrates is dissimilar, for example, a π-type nitride semiconductor is formed. The vapor of the constituents of the film is deposited in a vacuum. By using this method, the speed of the crucible can be slowed, or the film can be observed on the spot. Effect of invention
根據本發明之成腺担里 __ L 成联裝置，可減小基板產生翹曲或龜裂之 可能性，且可提高如 士 Ε ^ 门所成長之薄膜之膜質。 【實施方式】 面參妝圖式，一面說明本發明之實施形態。再 者’於各實施形態中， 對發揮相同功能之部位附上相同之 參照符號，若無特別命 、行⑺而要’則不重複其說明。 (實施形態1) 如圖1所示，本發明 之實施形態1中之利用氣相成長之成 142497.doc 201105818 圓之曰⑥ 基板、例如料何體基板丨〇之晶 日日座1的上側’具備作為第！加熱構件之加敎哭7,里 以與晶座1之上側之主表 '、 圖心乃式而配置。又，如 存在於晶座1之上側之加熱器7、與晶座-:持之…配置有加熱夹具6。再者，此處所謂主表 糸.曰例如半導體基板10或晶座1等之表面中面積最 且安放於沿水平方向上之方向上之表面。X，此處成 長與成膜係作為大致相同之含義而使用。 成膜裝置200之其他構成與上述圖6所示之成膜裝置⑽ 相同。即，於晶座!之下側亦具備作為第2加熱構件之加熱 益2 ’其以與晶座1之下侧之主表面相對向之方式而配置。 並且於BB座1之上侧設置有用以流動原料氣體之流道3。 面由加熱器7及加熱器2加熱晶座1及其上之半導體基板 10’ 一面自設置於流道3之一方之端部（上游側）的原料2體 喷嘴4向流道3之内部流入構成要成膜之薄膜之成分的原料 軋體’使半導體基板10之一方之主表面（圖i所示之上側之 主表面）處於暴露於該原料氣體中之狀態。如此，於經加 熱之半導體基板10之主表面上，形成由所供給之原料氣體 而構成的薄膜。此時，可使用自設置於成膜裝置2〇〇之内 部之頂部（上側）之模組5所照射的雷射光，來測定下述半導 體基板10之曲率或翹曲、即沿半導體基板1〇之主表面之方 向上的彎曲程度。再者，此處曲率及翹曲均係半導體基板 10之彎曲程度之定量指標，所謂曲率係指表示半導體基板 10之主表面上之某1點中之彎曲程度的指標，所謂翹曲係 142497.doc •10· 201105818 指表示半導體基板ίο之整個主表面之彎曲程度、或伴隨彎 曲之半導體基板10之主表面之形狀的指標。 再者，於圖1中，加熱夾具6及加熱器7、流道3係於左右 方向上一部分不連續，其原因在於，使自模組5所照射之 雷射光於半導體基板10之主表面上傳播之影像變得容易。 因此，若可透過來自模組5之雷射光，則亦可使用加熱夾 具6及加熱器7之左右方向連續的構件。又，於圖1中係 自上方,日、?、射來自模組5之雷射光，但是例如亦可於流道3之 側面附近安放模組5，並自模組5相對於半導體基板丨〇之主 表面上，自相對於半導體基板10之主表面之方向傾斜之方 向，照射能夠透過流道3之雷射光。此時，加熱夾具6及加 熱器7之左右方向理所當然地變得連續。無論於哪個情形 時，由於圖1係剖面圖，故實際上加熱夾具6、加熱器7、 流道3共為一個構件。 如上所述，晶座1係用以安放半導體基板丨〇者。但是， 除此之外，晶座1及加熱夾具6均具備將加熱器之熱均勻地 傳遞至半導體基板10之作用。具體而言，加熱夾具6將加 熱器7所產生之熱均勻地傳播至半導體基板1〇，晶座丨將加 熱器2所產生之熱均勻地傳播至半導體基板1〇。晶座丨、加 熱夾具6均係由例如塗佈有碳化矽（Sic)之碳（c)所形成。由 於碳化矽之導熱性較高、且耐熱性優異，故可順暢地使熱 傳播至半導體基板1〇。再者，除了上述材質之外，作為晶 座1加熱夹具6之材質’可使用例如石英、藍寶石、 SiC、塗佈有熱解碳之碳、氮化硼⑺、及碳化鈕（hC)。 142497.doc 201105818 流道3係用以向半導體基板1〇之主表面上供給原料氣體 而設置之配管。作為該流道3之材質，例如使用石英，除 此之外可使用例如塗佈有sic之薄膜之碳、藍寶石、Sic、 塗佈有熱解碳之碳、BN、TaC、SUS(Stainless以“丨，不鏽 鋼）、鎳（Ni)。又，自原料氣體噴嘴4向流道3之内部供給構 成要形成之薄膜之原料氣體。此時，若藉由加熱器7及加 熱器2而加熱半導體基板1〇 ’則供給至半導體基板之主 表面上之原料氣體被熱解，從而可於半導體基板1〇之主表 面上形成結晶（薄膜）。 例如，考慮了使用藍寶石基板卜面）作為半導體基板1〇， 於藍寶石基板之一方之主表面上形成ΠΙ族化合物半導體之 薄膜的情形。於該情形時，作為自原料氣體噴嘴4供給至 半導體基板10之主表面上之氣體，可使用藉由在構成薄膜 之金屬上加成甲基（-CH3)而形成之、常溫下具有較高蒸汽 壓之液體或者固體的有機金屬化合物之蒸汽、與非金屬材According to the adenosene __ L forming device of the present invention, the possibility of warpage or cracking of the substrate can be reduced, and the film quality of the film grown by the sputum can be improved. [Embodiment] An embodiment of the present invention will be described with reference to a facet pattern. In the respective embodiments, the same reference numerals are attached to the parts that perform the same functions, and the description is not repeated unless there is no special life or line (7). (Embodiment 1) As shown in Fig. 1, in the first embodiment of the present invention, the vapor-phase growth is carried out into a 142497.doc 201105818 round 曰6 substrate, for example, the upper side of the crystal substrate 1 of the substrate. 'Become as the first! The heating member is twisted and cried, and is arranged in the same manner as the main table ' on the upper side of the crystal holder 1'. Further, the heater 7 is placed on the upper side of the crystal holder 1, and the heating jig 6 is disposed in the crystal holder. Further, the main surface of the semiconductor wafer 10 or the crystal substrate 1 or the like is the surface having the largest area and placed in the direction in the horizontal direction. X, where the growth length and the film formation system are used in substantially the same meaning. The other configuration of the film forming apparatus 200 is the same as that of the film forming apparatus (10) shown in Fig. 6 described above. In other words, the heating element 2' as the second heating member is disposed on the lower side of the crystal holder, and is disposed to face the main surface on the lower side of the crystal holder 1. Further, a flow path 3 for flowing the material gas is provided on the upper side of the BB seat 1. The surface of the semiconductor substrate 10' on which the heater 1 and the heater 2 are heated by the heater 7 and the heater 2 flows from the inside of the flow path 3 from the raw material 2 nozzle 4 provided at one end (upstream side) of the flow path 3 The raw material rolling body constituting the component of the film to be formed is in a state in which one of the main surfaces of the semiconductor substrate 10 (the main surface on the upper side shown in Fig. i) is exposed to the material gas. Thus, a thin film composed of the supplied source gas is formed on the main surface of the heated semiconductor substrate 10. At this time, the curvature or warpage of the semiconductor substrate 10 described below, that is, along the semiconductor substrate 1 can be measured using laser light irradiated from the module 5 provided on the top (upper side) of the inside of the film forming apparatus 2A. The degree of bending in the direction of the main surface. In addition, the curvature and the warpage here are quantitative indexes of the degree of bending of the semiconductor substrate 10, and the curvature means an index indicating the degree of bending in a certain point on the main surface of the semiconductor substrate 10, and the warpage system is 142497. Doc •10· 201105818 refers to an index indicating the degree of bending of the entire main surface of the semiconductor substrate ίο or the shape of the main surface of the semiconductor substrate 10 that is bent. Further, in FIG. 1, the heating jig 6, the heater 7, and the flow path 3 are partially discontinuous in the left-right direction because the laser light irradiated from the module 5 is irradiated onto the main surface of the semiconductor substrate 10. The image of the spread becomes easy. Therefore, if the laser light from the module 5 can be transmitted, the member in which the heating jig 6 and the heater 7 are continuous in the left-right direction can be used. Moreover, in FIG. 1, the laser light from the module 5 is emitted from above, and the module 5 is placed, for example, the module 5 can be placed near the side of the flow path 3, and the module 5 is opposed to the semiconductor substrate. On the main surface of the main surface, laser light that can pass through the flow path 3 is irradiated from a direction inclined with respect to the direction of the main surface of the semiconductor substrate 10. At this time, the right and left directions of the heating jig 6 and the heater 7 are of course continuous. In any case, since Fig. 1 is a cross-sectional view, the heating jig 6, the heater 7, and the flow path 3 are actually one member. As described above, the crystal holder 1 is used to house a semiconductor substrate. However, in addition to this, both the crystal holder 1 and the heating jig 6 have a function of uniformly transferring the heat of the heater to the semiconductor substrate 10. Specifically, the heating jig 6 uniformly propagates the heat generated by the heater 7 to the semiconductor substrate 1 , and the crystal holder 均匀 uniformly propagates the heat generated by the heater 2 to the semiconductor substrate 1 . The crystal holder 加 and the heating jig 6 are each formed of, for example, carbon (c) coated with ruthenium carbide (Sic). Since tantalum carbide has high thermal conductivity and excellent heat resistance, heat can be smoothly transmitted to the semiconductor substrate 1〇. Further, in addition to the above materials, as the material of the crystal holder 1 heating jig 6, for example, quartz, sapphire, SiC, carbon coated with pyrolytic carbon, boron nitride (7), and carbonization button (hC) can be used. 142497.doc 201105818 The flow channel 3 is a pipe provided for supplying a material gas to the main surface of the semiconductor substrate 1 . As the material of the flow path 3, for example, quartz is used, and for example, carbon coated with a film of sic, sapphire, Sic, carbon coated with pyrolytic carbon, BN, TaC, SUS (Stainless) can be used.丨, stainless steel), nickel (Ni). Further, the material gas constituting the film to be formed is supplied from the material gas nozzle 4 to the inside of the flow path 3. At this time, the semiconductor substrate is heated by the heater 7 and the heater 2. The material gas supplied onto the main surface of the semiconductor substrate is pyrolyzed to form a crystal (thin film) on the main surface of the semiconductor substrate 1 . For example, a sapphire substrate is considered as the semiconductor substrate 1 In the case where a film of a bismuth compound semiconductor is formed on the main surface of one of the sapphire substrates, in this case, the gas supplied to the main surface of the semiconductor substrate 10 from the material gas nozzle 4 can be used by A vapor or non-metal material formed by adding a methyl group (-CH3) to a metal of a film and a liquid or solid organometallic compound having a high vapor pressure at a normal temperature.
料之氫化物氣體。使用有機金屬氣相成長法（M〇vpE (Metal Organic Vapour Phase即心“叫法）、即將該等氣體 喷附於經加熱之半導體基板10之主表面上，使其熱解而獲 得半導體結晶，藉此可使III族化合物半導體之薄膜於半導 體基板10之主表面上成膜。如上所述利用加熱器進行之加 熱係用以使所供給之氣體熱解並使結晶作為薄膜成膜而進 行者。 或者，亦可使用氣相成長法（VPE(vapour Phase Epitaxial)法）’其使用氣化物氣體作為自原料氣體噴嘴4供 142497.doc 12 201105818 給至半導體基板1 〇之主表面上之氣體。特別係將使用氯化 物氣體、與非金屬材料之氫化物氣體之氣相成長法稱作氫 化物氣相成長法（H-VPE(Hydride Vapor Phase Epitaxy) 法）。將該等原料氣體噴附至經加熱之半導體基板1 〇之主 表面上’使其熱解而獲得半導體結晶。若使用成膜裝置 200 ’則亦可使用上述河〇^1^法、vPE法、H-VPE法中之 * 任一者。 此處’若使用例如圖6所示之先前之僅存在配置於晶座1 下側之加熱器2之成膜裝置100而於1050°C下成膜，則加熱 器2所產生之熱會自晶座i之下侧傳遞至上側，並自安放於 晶座1上側之半導體基板丨0(藍寶石基板）之下側傳遞至上 側。進而，由於向半導體基板10之上方之輻射、或向原料 氣體之傳熱，而大量之熱流失。該自下側朝向上側之大量 之熱亦自藍寳石基板之主表面之下側傳播至上側。此時， 於藍寶石基板之主表面之下側與上側之溫度產生梯度，由 於該藍寶石基板之主表面之下側與上側之溫度梯度（溫度 差），而藍寶石基板之主表面之曲率變大，因此沿藍寶石 基板之主表面之方向上產生輕曲。 又，由於自晶座1之下側朝向上側之輻射熱等，所供給 至流道3之内部的原料氣體亦會產生氣體之溫度之梯度， 其、纟σ果導致釓體之對流加劇。如此，自原料氣體喷嘴4所 供給之原料氣體穿過半導體基板10之主表面上時，由於氣 體之對流而一面於上下方向上重複運動一面穿過。如此之 氣體之對流阻礙向半導體基板10之主表面上之穩定的氣相 r 广. 142497.doc 201105818 成長。 猎由以上，若減小半導體基板10(藍寶石基板）之主表面 =下側與上側之溫度梯度（溫度差），減小原料氣體之對 則可面抑制半導體基板10之翹曲，一面向半導體基 表面上進行良好的氣相成長。因此，於本發明 中使用圖1所示之成膜裝置200來進行半導體基板10之加 ' L成膜裝置係構成為於圖ό所示之先前之成膜裝 置100中’具備以與晶座！之上側之主表面相對向之方式而 配置的作為第1加熱構件之加熱器7，於由存在於晶座i 之上側之加熱器7、與晶座1所夾持之區域中配置有加埶夾 具ό。 … 如此，係#由加熱構件自上側與下側此兩#來加熱安放 於晶座1之一方之主表面上之半導體基板10。如此，例如 與如圖6所示之成膜裝置100般僅於半導體基板10之上側或 下側中之壬；ίτ β又置加熱構件並加熱之情形相比，上側與 下側之溫度差變小。因此，與僅於半導體基板10之上側或 下側中之任一方設置加熱構件並加熱之情形相，可減小 於半導體基板10上成長薄膜時之半導體基板1〇之主表面之 彎曲程度即曲率，且可減小翹曲之量。 再者’於成膜裝置200中，根據需要，亦可僅使例如加 熱器7與加熱器2中之任一方進行加熱。例如，於成膜裝置 200中若不使加熱器7運轉而僅使加熱器2加熱則可進行 與圖6所示之成膜裝置1〇〇㈣之運營。換而言之，即便成 臈裝置200僅使用加熱器7與加熱器2中之任一方亦可具有 -Μ Ι 42497.doc 201105818 能夠良好地成膜之能力。又，加熱器7及加熱器2之加熱溫 度可分別獨立地設定成任意之加熱溫度。因此，可任意地 控制成膜裝置200之内部之熱之流動。 再者，如上所述，於該情形時，存在相對於半導體基板 1〇之主表面而上側與下側之溫度差變大，半導體基板10之 勉曲之里變大的可能性。但是，例如，為了與成膜同時橋 正自最初(自成膜之前)具有相當之翹曲之半導體基板⑺之 翹曲，可僅使加熱器7與加熱器2中之任一方進行加熱。如 此，包含僅使加熱器7與加熱器2中之任—方進行加熱之情 形在内’可將加熱H 7與加熱器2分別獨立地設定成任意之 加熱溫度* 〜 又，相對於半導體基板1〇之主表面方向，以盘一方（上 側）及他方（下側）此兩方之主表面相對向之方式而配置p 加熱構件，藉此可使與半導體基板1〇之主表面相對向之環 境中之原料氣體的、因溫度差而引起的濃度梯度變小，並 且可抑制原料氣體之對流之產生。因此，原料氣體於流道 3之配管内穩定地自上游側流向下流側。因此， :基板1〇之主表面上穩定地進行氣相成長，且可提高所成 長之薄膜之膜質。 取 又’藉由減小半導體基板1〇之主表面之彎曲程度即曲 率、且減小赵曲之量，可使半導體基板1〇之主表面盘曰座 !之接觸情況，與半導體基板1〇之主表面上之位置無二 即無論料導體基板1G之中央部分抑或邊緣部均大致固 定。因此’可使半導體基板1〇之主表面之溫度與主表面上 142497.doc 15 201105818 之位置.，，、關而大致固定。如此，藉由將半導體基板之主 表面上之溫度分布保持為大致固$，可使半導體基板10上 成膜之薄膜大致均質。 進而，藉由控制於半導體基板1〇上成膜時之翹曲，來減 J成膜後及降溫後之半導體基板i G之勉曲，藉此可減小半 導體基板1G產生龜裂之可能性。例如，—般而f，於基板 (半V體基板10)與基板上所成長之膜之熱膨脹係數不同之 隋形％ ®成膜後降溫時，存在基板之輕曲變大、基板產 生龜裂之情形。但是，藉由成膜中產生例如與根據該基板 之物丨生所產生之翹曲之方向為相反方向之想曲，可減小 (矯正）成膜中根據基板之物性所產生的翹曲。因此，可抑 制成膜後之基板中之翹曲或龜裂之產生。此情況可藉由如 下情況而實現，即如上所述成膜裝置2〇〇亦可僅使加熱器7 與加熱器2中之任-方進行加熱，可獨立且自由地控制加 熱器7及加熱器2各自之溫度。 再者，作為使薄膜成膜之半導體基板1〇之材質，例如除 了使用藍寶石基板、Si晶圓之外，亦可使用化合物半導體 即GaN或SiC、氮化鋁（A1N)或氮化鋁鎵（AiGaN)之晶圓（基 板）。 藉由加熱器2及加熱器7而加熱’且用以把握於半導體美 板10上產生之翹曲之量之、半導體基板1〇的主表面上之某 1點中之沿主表面之方向上的彎曲程度即曲率，例如可使 用自設置於成膜裝置200之内部之頂部（上側）' 作為測定部 的模組5所照射之雷射光來测定。再者，如上所述，例如 142497.doc -16- 201105818 亦可於流道3之側面附近安放模組5，自模組 板10之主#而u A 7干¥體基 ： 表面上自相對於半導體基板10之主表面之方向傾 / 、方向肊射能夠透過流道;3之雷射光。 成膜中之羊導體基板10之鍾曲可根據模組5(in-situ(原 位）现控杰）所測定之曲率，藉由模組5運算而求得。作為用 、測定成膜中之半導體基板10之翹曲之模組5，亦可使用 市售者。又，可使用測定半導體基板10之主表面上之某i 之曲率後藉由運算而算出㈣的類型之模組5，亦可使 用月b夠測疋半導體基板10整體之翹曲（形狀）之類型的模組 5。又，為了測定成膜後之半導體基板1〇整體之翹曲，可 使用上述模挺5，但亦可使用例如階差計或表面 計。 圖2所不之成膜裝置2〇1係構成為於圖丨所示之成膜裝置 20〇中進而具備控制加熱器7及加熱器2之溫度的控制部 3〇控制部30係連接於模組5，其可根據模組5所測定出之 沿半導體基板10之主表面之方向上之曲率的結果，而即時 也獨立控制加熱器7及加熱器2之加熱溫度，以使半導體基 板10之曲率為特定值。藉由將連接於模組5之控制部川連 接至加熱器7及加熱器2，並即時地獨立控制加熱器7及加 熱器2之加熱溫度，而控制半導體基板1〇之曲率（翹曲），其 結果為可設為能夠減小半導體基板10之翹曲之量的加熱溫 度。藉由重複如此之控制，可一面控制沿半導體基板1〇之 主表面之方向上之曲率及翹曲之量，一面於半導體基板1〇 之一方之主表面上形成薄膜。 142497.doc •17- 201105818 (實施形態2) 如圖3所示，本發明之實施形態2中之利用氣相成長之成 膜裝置301係構成為具備材料容器’其於用以照射構成於 基板、例如半導體基板1〇之一方之主表面上要成膜之薄膜 的成刀之蒸〉气之被稱作努特生池71及努特生池7 2的筒狀之 前端空出有針孔，又，雖未圖示但成膜裝置3〇1具備使裝 置内成為真空之功能β 努特生池71及努特生池72係如下者：藉由自針孔使於較 宇宙空間更高之真空中使材料加熱蒸發並使蒸發分子之飛 散方向一致之噴流（分子束）照射至經加熱的半導體基板1〇 之主表面上，而使於半導體基板10之主表面上要成膜之例 如III族氮化物半導體之薄膜結晶成長。如此，將藉由於真 空中照射使構成要成膜之薄膜之成分之蒸汽的飛散方向一 致之分子束，而於基板之一方之主表面上堆積的成膜方法 稱作分子束蟲晶法（MBE(molecular beam epitaxy)法）。 例如，於要使A1N之薄膜於半導體基板1〇之一方之主表 面上成膜的情形時，首先，分別向努特生池7丨及努特生池 72中填充銘（A1)及氮（N)。接著’加熱努特生池7丨而使八1蒸 發。再者，由於努特生池7 2中填充之N於常溫下係氣體故 無需加熱，此處例如填充金屬材料等時，與努特生池71同 樣地進行加熱而使材料蒸發。然後，自努特生池之前端部 之針孔將喷流（分子束）於真空中照射至經加熱之半導體基 板10之一方之主表面上。如此，到達半導體基板10之主表 面上之AI及N之分子附著於經加熱之半導體基板1〇之主表 142497.doc -18- 201105818 面上並鍵結，從而形成ain結晶。#，其成為I空蒸鐘之 如之4膜。由於MBE法係非平衡系且不經過化學反應過 程之方法，因此其係適於結晶成長之機制解析、或超薄膜 之成長之成膜方法。 再者，於圖3中之成膜裝置3〇1中設置有2台努特生池， 但亦可根據要成膜之薄罕之種類而增加努特生池之台數。 例如’於要使3成分系之鎵㈣（GaAlAs)之薄膜成膜之情 形時’設置3台努特生池即可。 、本欹明之實施形態2與本發明之實施形態丨之不同點僅在 於’使用利用上述真空蒸鍍之MBE法之成膜裝置3〇ι。 :如圖3所不，於成膜裝置3〇1中，亦係於晶座1之上側 安放半導體基板U)，且具備以與晶心之上侧之主表面相 寸向之方式而配置的作為第!加熱構件之加熱器7，及以盥 晶座i之下側之主表面相對向之方式而配置的作為第2加熱 構件之加熱器2。2台加熱器分別經由晶…及加熱夾具㈣ 將熱傳播至半導體基板10。如此，自上側及下側此兩方藉 由加熱構件而加熱安放於晶座1之一方之主表面上之半導 體基板10之構成，與例如圖1所示之成膜裝置200或圖2所 示之成膜裝置201相同。 僅以上所述之各點與本發明之實施形態〗不同。即，本 發明之實施形態2中上述未提及之構成及條件'次序及效 果等全部依照本發明之實施形態1。 實施例1 而使所成膜之薄膜 實施例1係藉由本發明之成膜裝置 I42497.doc -19- 201105818 之均質性、及積層構造之曲率改善的實施例。藉由以下所 示之方式而形成：於圖4所示之作為半導體基板10(參照圖 1〜圖3)之6英吋之藍寶石基板ll(c面）之一方之主表面上（圖 4中之上側），分別積層膜厚為25 nm之低溫GaN21、於其上 積層膜厚為2 μιη之GaN22、進而於其上積層膜厚為25 nm 且含有25質量％之A1之AlGaN42之薄膜而成的作為磊晶積 層構造的藍寶石積層構造50之樣品。 樣品1係使用圖6所示之自先前使用之成膜裝置100，而 形成圖4所示之藍寶石積層構造50。此處，使用圖6中未圖 示之熱電偶，測定藍寶石積層構造50中之藍寶石基板11之 主表面之溫度T，於低溫GaN21成膜時之T為500°C、且 GaN22及AlGaN42分別成膜時之T為1050°C之狀態下，使用 有機金屬氣相成長法（MOVPE法），藉此使GaN22及 AlGaN42成膜。 樣品2係使用圖1所示之本發明之實施形態1中之成膜裝 置200，於僅使加熱器2進行加熱、而加熱器7不進行加熱 之狀態下，形成圖4所示之藍寶石積層構造50。加熱器2之 加熱溫度係依照準備樣品1時之加熱溫度，具體而言，使 用圖1中未圖示之熱電偶，測定藍寶石積層構造50中之藍 寶石基板11之主表面之溫度T，於低溫GaN21成膜時之T為 500°C、且GaN22及AlGaN42分別成膜時之T為1050°C之狀 態下，使用有機金屬氣相成長法（MOVPE法），藉此使 GaN22及AlGaN42成膜。關於其他成膜條件係依照樣品1之 成膜時。 142497.doc •20- 201105818 樣品3係使用圖1所示之本發明之實施形態1中之成膜裝 置200，一面使加熱器2及加熱器7兩者進行加熱，一面形 成圖4所示之藍寶石積層構造50。此時之藍寶石積層構造 50之主表面之溫度T係依照準備樣品1及樣品2時之溫度， 具體而言，使用圖1中未圖示之熱電偶，測定藍寶石積層 構造50中之藍寶石基板11之主表面之溫度T，於低溫 GaN21成膜時之T為500°C、且GaN22及AlGaN42分別成膜 時之T為1 050°C之狀態下’使用有機金屬氣相成長法 (MOVPE法）’藉此使GaN22及AlGaN42成膜。一面以T成 為上述溫度之方式’調整加熱器7及加熱器2之功率（加熱 溫度）’以加熱器7與加熱器2之功率大致相同之方式進行 調整，一面進行成膜。關於其他成膜條件係依照樣品i之 成膜時。 樣品4係使用圖1所示之本發明之實施形態J中之成膜裝 置200，一面使加熱器2及加熱器7兩者進行加熱，—面形 成圖4所示之藍寶石積層構造5〇。此時之藍寶石積層構造 50中之藍寶石基板丨丨之主表面之溫度τ，係依照準備上述 樣口口 1 3時之皿度。又’此處亦使用有機金屬氣相成長法 (MOVPE法）來進行成膜。以τ成為上述溫度之方式而調敕 加熱H7及加熱器2之功率（加熱溫度），且以顏中之^ 石積層構造5G之曲率（或大致為零之方式，具 以加熱器7及加熱器2之功率之比約為67: 33之方式來進二 調整。關於其他成膜條件係依照樣品i之成膜時。 仃 對於藉由以上之順序進行準備 之樣品1〜4 測定沿藍寶 142497.doc •21 - 201105818 石積層構造50之主表面之方向之曲率（基板的曲率）、藍寶 石積層構造50之翹曲之方向（基板之翹曲）、薄片電阻（薄片 電阻之分布）及藍寶石基板11之主表面之中央部分之薄片 電阻（中央部分的薄片電阻）。再者，基板之曲率係使用作 為模組5(參照圖2)之就地監控器而於AlGaN42之成膜中進 行測定。又，關於薄片電阻，於成膜結束後使用非接觸之 薄片電阻測定裝置而評估二維電子氣體特性。下述表1表 示測定結果。表1係總結實施例1中之樣品1〜4之構成及測 定資料之表。 [表1] 樣品1 樣品2 樣品3 樣品4 成膜裝置 先前 本發明用 本發明用 本發明用 加熱器加熱 僅加熱器 2(下） 僅加熱器 2(7) 加熱器7(上)及加熱器 2(下） 加熱器7(上)及加熱器 2(下） 加熱器之功 率比率 - - 加熱器7(上)與加熱器 2(下)大致相同 加熱器Λ上)與加熱器 2(下)之比為67 : 33 基板之曲率 120 km'1 110 km'1 25 km] 0 km'1 基板之翹曲 凹方向 凹方向 凹方向 無 薄片電阻之 分布 491士62 Ω/sq 485士52 Ω/sq 431 士Π Ω/sq 426土4 Ω/sq 中央部分之 薄片電阻 433 Ω/sq 431 Ω/sq 426 Ω/sq 423 Ω/sq 根據表1，使用自先前所使用之僅於晶座1之下側設置有 加熱器2之成膜裝置100的情形（樣品1)、與一面使用本發明 之成膜裝置200 —面僅使晶座1之下側之加熱器2加熱的情 形（樣品2)獲得同樣之结果。具體而言，於AlGaN42之成膜 中，藍寶石積層構造50之主表面以向凹方向、即朝下凸起 之方式，以較大之曲率而彎曲。又，關於薄片電阻，亦可 知樣品1之分布為土 62 Ώ/sq ’樣品2之分布為土 52 Ω/sq ’無 法確保所成長之薄膜之均質性。關於樣品1，主表面之中 142497.doc •22· 201105818 央部分之薄片電阻之值約為433 Q/sq’係比較良好的結 果，但隨著自中央部分接近邊緣部，而薄片電阻之值變 大y分布惡化。關於樣品2亦同樣地，主表面之中央部分 :薄片電阻之值約為431 n/sq，係比較良好的結果，但隨 著自中央。p刀接近邊緣部，而薄片電阻之值變大，分布惡 化因此可知右僅加熱晶座1之下側，則藍寶石積層構 k 0之下側與上側之溫度梯度（溫度差）變大，由此彎曲較 大且藍寶石積層構造50之主表面内之溫度分布變大，薄 片電阻之分布惡化。 相對於此，例如如樣品3般，藉由使晶座丨之上侧及下側 此兩方之加熱器進行加熱，A1GaN42之成膜中之藍寶石積 層構造50之曲率變小。又’薄片電阻之分布亦改善為±ιι ω/ν，所成長之薄膜之均質性得以改善。中央部分之薄片 電阻之值亦為426 Ω，變得良好。 然而，若使晶座1之上側之加熱器7與下側之加熱器2之 功率大致相同，則曲率雖較低但仍向凹方向彎曲。又隨 著自主表面之中央部分接近邊緣部，而薄片電阻之值顯著 增加。根據樣品1〜3之結果，可知當存在主表面之下側與 上側之溫度梯度（溫度差）之情形時，藍寶石積層構造5〇之 中央部分向溫度較高之一側彎曲。因此，為了使曲率為〇 而增強溫度較低之上側之加熱器7之功率時，如樣品4般， 曲率及翹曲之值大致為〇，薄片電阻之分布亦得以特別地 改善，為±4 Ω/sq。中央部分之薄片電阻之值亦為423卩， 變得良好。於該情形時’確認到即便自主表面之中央部分 142497.doc •23· 201105818 接近邊緣部，薄片電阻之值亦不會顯著增加。 如上所述，藉由利用可以使用能夠獨立地控制作為第1 加熱構件之加熱器7及作為第2加熱構件之加熱器2各自之 加熱溫度的控制部30來進行獨立控制之M〇vpE裝置，可 大幅度地提高藍寶石積層構造5〇之主表面上所形成之薄膜 之均質性。 藉由使晶座1之主表面之下側及上側此兩方之加熱器進 行加熱而減小/;IL道3(參照圖2)之下側與上側之溫度梯度 (溫度差），藉此可抑制與藍寶石積層構造5〇之主表面相對 向之％境中之原料氣體之對流的產生。因此，原料氣體於 机道3之配管内穩定地自上游側流向下流側。由此，本發 明者認為可於藍寶石積層構造50之主表面上穩定地進行成 膜，藍寶石積層構造50之薄片電阻之分布等之特性提高。 又，除此之外，若抑制熱對流，則可抑制因對流所引起 之加成反應或聚合反應。如此本發明者認為藉由抑制加成 反應或聚合反應，亦具有特性提高之效果。 又，右藉由使晶座1之主表面之下側與上側此兩方之加 熱态進行加熱，而減小藍寶石積層構造5〇之主表面之下側 一上側之溫度梯度（溫度差），則可減小作為彎曲程度之曲 率。藉由減小曲率，可使藍寶石積層構造5〇之主表面與晶 座1之接觸情況，與藍寶石積層構造50之主表面上之位置 無關、即藍寶石積層構造50之中央部分、邊緣部均大致固 定。因此’可使主表面之溫度與主表面上之位置無關而大 致固定。本發明者認為如此藉由使主表面上之溫度分布保 142497.doc •24· 201105818 持大致固定，可使所成長之薄膜大致均質。The hydride gas of the material. An organic metal vapor phase growth method (M〇vpE (Metal Organic Vapour Phase), that is, a gas is sprayed on the main surface of the heated semiconductor substrate 10, and pyrolyzed to obtain a semiconductor crystal. Thereby, the film of the group III compound semiconductor can be formed on the main surface of the semiconductor substrate 10. The heating by the heater as described above is for pyrolyzing the supplied gas and allowing the crystal to be formed as a film. Alternatively, a vapor phase growth method (VPE (Vapour Phase Epitaxial) method) may be used, which uses a gasification gas as a gas supplied from the raw material gas nozzle 4 to the main surface of the semiconductor substrate 1 by 142497.doc 12 201105818. In particular, a vapor phase growth method using a chloride gas and a hydride gas of a non-metal material is referred to as a Hydride Vapor Phase Epitaxy method. The raw material gases are sprayed to On the main surface of the heated semiconductor substrate 1 ', it is pyrolyzed to obtain a semiconductor crystal. If the film forming apparatus 200 is used, the above-mentioned river 〇 method, vPE method, H-VPE can also be used. Any of them. Here, if a film forming apparatus 100 having only the heater 2 disposed on the lower side of the crystal holder 1 as shown in FIG. 6 is used, and film formation is performed at 1050 ° C, the heater is used. The heat generated by the second side is transmitted from the lower side of the crystal holder i to the upper side, and is transmitted to the upper side from the lower side of the semiconductor substrate 丨0 (sapphire substrate) placed on the upper side of the crystal holder 1. Further, since it is above the semiconductor substrate 10 Radiation, or heat transfer to the material gas, and a large amount of heat loss. The large amount of heat from the lower side toward the upper side also propagates from the lower side of the main surface of the sapphire substrate to the upper side. At this time, the main sapphire substrate The temperature of the lower side and the upper side of the surface generates a gradient. Due to the temperature gradient (temperature difference) between the lower side and the upper side of the main surface of the sapphire substrate, the curvature of the main surface of the sapphire substrate becomes large, so that the main surface of the sapphire substrate is The light is generated in the direction. Further, due to the radiant heat from the lower side of the crystal holder 1 toward the upper side, the material gas supplied to the inside of the flow path 3 also generates a gradient of the temperature of the gas, which causes the corpus callosum Convection In this case, when the material gas supplied from the material gas nozzle 4 passes through the main surface of the semiconductor substrate 10, it is traversed in the vertical direction due to the convection of the gas, and the convection of the gas hinders the semiconductor substrate. The stable gas phase r on the surface of the main surface of 10 is wide. 142497.doc 201105818 Growth. If the above is reduced, the main surface of the semiconductor substrate 10 (sapphire substrate) = the temperature gradient (temperature difference) between the lower side and the upper side, minus The pair of small material gases can suppress the warpage of the semiconductor substrate 10 and perform good vapor phase growth on the surface of the semiconductor substrate. Therefore, in the present invention, the film forming apparatus 200 shown in FIG. 1 is used to form the semiconductor substrate 10, and the L-film forming apparatus is configured to be provided with the crystal holder in the prior film forming apparatus 100 shown in FIG. ! The heater 7 as the first heating member disposed on the upper surface of the upper surface is disposed in a region sandwiched by the heater 7 present on the upper side of the crystal holder i and the crystal holder 1 Fixture ό. Thus, the heating substrate is heated from the upper side and the lower side to heat the semiconductor substrate 10 placed on the main surface of one of the crystal holders 1. Thus, for example, as in the film forming apparatus 100 shown in FIG. 6, only in the upper side or the lower side of the semiconductor substrate 10; the temperature difference between the upper side and the lower side is changed as compared with the case where the heating member is heated and heated. small. Therefore, the degree of curvature of the main surface of the semiconductor substrate 1 when the film is grown on the semiconductor substrate 10, that is, the curvature, can be reduced in the case where the heating member is provided on only one of the upper side or the lower side of the semiconductor substrate 10 and heated. And can reduce the amount of warpage. Further, in the film forming apparatus 200, only one of the heater 7 and the heater 2 may be heated as needed. For example, in the film forming apparatus 200, if only the heater 2 is not operated and the heater 2 is heated, the operation of the film forming apparatus 1 (4) shown in Fig. 6 can be performed. In other words, even if only one of the heater 7 and the heater 2 is used, the enthalpy device 200 can have the ability to form a film well. Further, the heating temperatures of the heater 7 and the heater 2 can be independently set to any heating temperature. Therefore, the flow of heat inside the film forming apparatus 200 can be arbitrarily controlled. In this case, as described above, the temperature difference between the upper side and the lower side increases with respect to the main surface of the semiconductor substrate 1 , and the distortion of the semiconductor substrate 10 becomes large. However, for example, in order to simultaneously warp the semiconductor substrate (7) having a warpage equivalent to that of the film (before film formation), it is possible to heat only one of the heater 7 and the heater 2. In this manner, the heating H 7 and the heater 2 can be independently set to an arbitrary heating temperature* including the case where only the heater 7 and the heater 2 are heated only. In the main surface direction of the crucible, the p-heating member is disposed such that the main surfaces of the two sides of the disc (upper side) and the other side (lower side) face each other, thereby making it possible to face the main surface of the semiconductor substrate 1 The concentration gradient of the material gas in the environment due to the temperature difference becomes small, and the generation of the convection of the material gas can be suppressed. Therefore, the material gas flows stably from the upstream side to the downstream side in the piping of the flow path 3. Therefore, vapor phase growth is stably performed on the main surface of the substrate 1 and the film quality of the grown film can be improved. By reducing the curvature of the main surface of the semiconductor substrate 1 , that is, the curvature, and reducing the amount of the curvature, the contact surface of the main surface of the semiconductor substrate 1 can be made, and the semiconductor substrate 1 The position on the main surface is the same regardless of whether the central portion or the edge portion of the conductor substrate 1G is substantially fixed. Therefore, the temperature of the main surface of the semiconductor substrate 1 can be substantially fixed to the position of the main surface 142497.doc 15 201105818. Thus, by maintaining the temperature distribution on the main surface of the semiconductor substrate at substantially solid cost, the film formed on the semiconductor substrate 10 can be made substantially uniform. Further, by controlling the warpage at the time of film formation on the semiconductor substrate 1 to reduce the distortion of the semiconductor substrate i G after the film formation and after the temperature reduction, the possibility of cracking of the semiconductor substrate 1G can be reduced. . For example, in general, when the substrate (half V-body substrate 10) and the film grown on the substrate have different coefficients of thermal expansion, the shape of the film is lowered, and when the film is cooled, the substrate is slightly curled and the substrate is cracked. The situation. However, it is possible to reduce (correct) the warpage caused by the physical properties of the substrate during film formation by causing, for example, a desired curvature in a direction opposite to the direction of warpage caused by the growth of the substrate. Therefore, warpage or cracking in the substrate after the film formation can be suppressed. This can be achieved by the film forming apparatus 2 being able to heat only the heater 7 and the heater 2 as described above, and independently and freely control the heater 7 and the heating. The respective temperatures of the devices 2. Further, as a material of the semiconductor substrate 1 which is used to form a thin film, for example, in addition to a sapphire substrate or a Si wafer, a compound semiconductor such as GaN or SiC, aluminum nitride (A1N) or aluminum gallium nitride (for example) may be used. AiGaN) wafer (substrate). Heated by the heater 2 and the heater 7 and used to grasp the amount of warpage generated on the semiconductor board 10, in a direction along the main surface of a certain point on the main surface of the semiconductor substrate 1 The degree of curvature, that is, the curvature, can be measured, for example, by using laser light irradiated from the module 5 of the measuring unit from the top (upper side) of the inside of the film forming apparatus 200. Furthermore, as described above, for example, 142497.doc -16-201105818 can also place the module 5 near the side of the flow channel 3, from the main # of the module board 10 and u A 7 dry body base: surface self-phase The direction of the main surface of the semiconductor substrate 10 is tilted, and the direction of the radiation is transmitted through the flow path; The bell of the sheep conductor substrate 10 in the film formation can be obtained by the operation of the module 5 according to the curvature measured by the module 5 (in-situ). As the module 5 for measuring the warpage of the semiconductor substrate 10 in the film formation, a commercially available one can also be used. Further, the module 5 of the type of (4) can be calculated by calculation after measuring the curvature of a certain surface on the main surface of the semiconductor substrate 10, and the warpage (shape) of the entire semiconductor substrate 10 can be measured using the month b. Type module 5. Further, in order to measure the warpage of the entire semiconductor substrate 1 after film formation, the above-mentioned mold 5 may be used, but a step meter or a surface meter may be used, for example. The film forming apparatus 2〇1 shown in Fig. 2 is configured to further include a control unit 3 for controlling the temperature of the heater 7 and the heater 2 in the film forming apparatus 20A shown in Fig. 2, and the control unit 30 is connected to the mold. In the group 5, the heating temperature of the heater 7 and the heater 2 can be independently and independently controlled according to the result of the curvature in the direction of the main surface of the semiconductor substrate 10 measured by the module 5, so that the semiconductor substrate 10 is The curvature is a specific value. Controlling the curvature (warpage) of the semiconductor substrate 1 by connecting the control unit connected to the module 5 to the heater 7 and the heater 2, and instantly controlling the heating temperatures of the heater 7 and the heater 2 independently. As a result, it is possible to set the heating temperature which can reduce the amount of warpage of the semiconductor substrate 10. By repeating such control, a film can be formed on the main surface of one of the semiconductor substrates 1 while controlling the curvature and the amount of warpage in the direction along the main surface of the semiconductor substrate 1 . 142497.doc • 17-201105818 (Embodiment 2) As shown in FIG. 3, the film forming apparatus 301 which uses the vapor phase growth in the second embodiment of the present invention is configured to include a material container for illuminating the substrate. For example, the vaporization of the film to be formed on the main surface of one of the semiconductor substrates 1 is called the Nutsson cell 71 and the cylindrical end of the Knott cell 7 2 is vacant with a pinhole. Further, although not shown, the film forming apparatus 3〇1 has a function of making the inside of the apparatus a vacuum. The Nututs pool 71 and the Nuosheng pool 72 are as follows: by the pinhole, the space is made higher than the space. In the vacuum, the material is heated and evaporated, and a jet (molecular beam) having a uniform scattering direction of the evaporating molecules is irradiated onto the main surface of the heated semiconductor substrate 1 to be formed on the main surface of the semiconductor substrate 10, for example. The thin film of the group III nitride semiconductor grows crystal. In this manner, a film forming method in which a molecular beam which is in a direction in which the vapor of a film to be formed into a film is uniformly dispersed by irradiation in a vacuum is deposited on a main surface of one of the substrates is called a molecular beam crystallization method (MBE). (molecular beam epitaxy) method). For example, in the case where a film of A1N is to be formed on the main surface of one of the semiconductor substrates, first, the Nousson cell 7 and the Knott pool 72 are filled with the inscription (A1) and nitrogen ( N). Then, the No. 5 pool was heated to evaporate. Further, since the N filled in the Nuts Pool 7 is heated at a normal temperature, heating is not required. When, for example, a metal material is filled, the material is evaporated in the same manner as the Nuts Pool 71 to evaporate the material. Then, a jet (molecular beam) is irradiated to the main surface of one of the heated semiconductor substrates 10 in a vacuum from the pinhole at the front end of the Nuosheng pool. Thus, molecules of AI and N reaching the main surface of the semiconductor substrate 10 are attached to the main surface of the heated semiconductor substrate 1 142497.doc -18-201105818 and bonded to form ain crystals. #, It becomes the membrane of the I empty steamer. Since the MBE method is a non-equilibrium system and does not undergo a chemical reaction process, it is suitable for a mechanism for crystal growth growth or a film formation method for super thin film growth. Further, in the film forming apparatus 3〇1 in Fig. 3, two Nuosheng pools are provided, but the number of Nuosheng pools may be increased depending on the type of thin film to be formed. For example, when three films of gallium (tetra) (GaAlAs) are formed into a film, it is sufficient to set three sets of Nuter's pool. The second embodiment of the present invention differs from the embodiment of the present invention only in the use of the film forming apparatus 3〇 using the MBE method using the vacuum deposition described above. As shown in FIG. 3, in the film forming apparatus 3A1, the semiconductor substrate U) is placed on the upper side of the crystal holder 1, and is disposed so as to be aligned with the main surface on the upper side of the crystal center. The heater 7 as the heating element and the heater 2 as the second heating member disposed so that the main surface on the lower side of the crystal seat i is opposed to each other. The two heaters are respectively passed through the crystal and the heating jig (4) Propagating heat to the semiconductor substrate 10. Thus, the semiconductor substrate 10 placed on the main surface of one of the crystal holders 1 is heated by the heating member from the upper side and the lower side, and is formed, for example, by the film forming apparatus 200 shown in FIG. 1 or as shown in FIG. The film forming apparatus 201 is the same. Only the above points are different from the embodiment of the present invention. That is, in the second embodiment of the present invention, the above-mentioned configuration and condition 'order and effect' are all in accordance with the first embodiment of the present invention. Example 1 Film formed film Example 1 is an example in which the homogeneity of the film forming apparatus of the present invention I42497.doc -19-201105818 and the curvature of the laminated structure are improved. It is formed by the following method: on the main surface of one of the six-inch sapphire substrate 11 (c surface) of the semiconductor substrate 10 (see FIGS. 1 to 3) shown in FIG. 4 (FIG. 4) On the upper side, a low-temperature GaN 21 having a film thickness of 25 nm, a GaN 22 having a film thickness of 2 μm, and a film of AlGaN 42 having a film thickness of 25 nm and containing 25% by mass of A1 are formed thereon. A sample of sapphire laminate structure 50 as an epitaxial laminate structure. Sample 1 was formed using the film forming apparatus 100 previously used as shown in Fig. 6 to form the sapphire laminate structure 50 shown in Fig. 4. Here, the temperature T of the main surface of the sapphire substrate 11 in the sapphire laminate structure 50 is measured using a thermocouple (not shown) in FIG. 6, and T is 500 ° C when the low-temperature GaN 21 is formed, and GaN 22 and AlGaN 42 are respectively formed. In the state where the film T is 1050 ° C, GaN 22 and AlGaN 42 are formed by using an organometallic vapor phase growth method (MOVPE method). In the sample 2, the film forming apparatus 200 according to the first embodiment of the present invention shown in Fig. 1 is used, and the sapphire layer shown in Fig. 4 is formed in a state where only the heater 2 is heated and the heater 7 is not heated. Construction 50. The heating temperature of the heater 2 is determined according to the heating temperature at the time of preparing the sample 1, specifically, the temperature T of the main surface of the sapphire substrate 11 in the sapphire laminate structure 50 is measured at a low temperature by using a thermocouple not shown in Fig. 1 . In the state in which T is 500 ° C when GaN 21 is formed, and T is 1050 ° C when GaN 22 and AlGaN 42 are formed separately, GaN 22 and AlGaN 42 are formed by using an organometallic vapor phase growth method (MOVPE method). The other film forming conditions were based on the film formation of Sample 1. 142497.doc • 20-201105818 Sample 3 uses the film forming apparatus 200 of the first embodiment of the present invention shown in FIG. 1 to heat both the heater 2 and the heater 7 to form the same as shown in FIG. Sapphire laminate construction 50. The temperature T of the main surface of the sapphire laminate structure 50 at this time is determined in accordance with the temperature at which the sample 1 and the sample 2 are prepared. Specifically, the sapphire substrate 11 in the sapphire laminate structure 50 is measured using a thermocouple (not shown) in FIG. The temperature T of the main surface is a state in which T is 500 ° C when the low-temperature GaN 21 is formed, and T is 1 050 ° C when GaN 22 and AlGaN 42 are respectively formed. 'The use of the organometallic vapor phase growth method (MOVPE method) 'This allows GaN 22 and AlGaN 42 to be formed into a film. The power of the heater 7 and the heater 2 (heating temperature) is adjusted so that T is the above temperature, and the film is formed while the heater 7 and the heater 2 are substantially equal in power. The other film forming conditions were based on the film formation of the sample i. In the sample 4, the film forming apparatus 200 according to the embodiment J of the present invention shown in Fig. 1 was used, and both the heater 2 and the heater 7 were heated to form a sapphire laminate structure 5 shown in Fig. 4. The temperature τ of the main surface of the sapphire substrate in the sapphire laminate structure 50 at this time is in accordance with the degree of preparation of the above-mentioned mouth 13 . Further, the film formation by the organometallic vapor phase growth method (MOVPE method) is also carried out here. The heating power of H7 and heater 2 (heating temperature) is adjusted in such a manner that τ becomes the above temperature, and the curvature of 5G is formed by the texture of the stone in the color (or substantially zero, with heater 7 and heating) The ratio of the power of the device 2 is about 67:33. The other film forming conditions are based on the film formation of the sample i. 仃 For the sample 1 to 4 prepared by the above sequence, the determination along the sapphire 142497.doc •21 - 201105818 The curvature of the main surface of the stone laminate structure 50 (the curvature of the substrate), the direction of the warpage of the sapphire laminate structure 50 (warpage of the substrate), the sheet resistance (distribution of the sheet resistance), and sapphire The sheet resistance (sheet resistance of the central portion) of the central portion of the main surface of the substrate 11. Further, the curvature of the substrate was measured in the film formation of AlGaN 42 using the local monitor as the module 5 (see Fig. 2). Further, regarding the sheet resistance, the two-dimensional electron gas characteristics were evaluated using a non-contact sheet resistance measuring device after the film formation was completed. Table 1 below shows the measurement results. Table 1 summarizes the sample 1 in Example 1. Table 4 Composition and Measurement Data Table [Table 1] Sample 1 Sample 2 Sample 3 Sample 4 Film Forming Apparatus Previously, the present invention used the present invention to heat only the heater 2 (bottom) with the heater of the present invention (only) 2 (7) Heater 7 (upper) and heater 2 (lower) Heater 7 (top) and heater 2 (bottom) Heater power ratio - - Heater 7 (top) is heated approximately the same as heater 2 (bottom) The ratio of the heater to the heater 2 (bottom) is 67: 33 The curvature of the substrate is 120 km'1 110 km'1 25 km] 0 km'1 The warp concave direction of the substrate is concave. 491 士 62 Ω/sq 485 士 52 Ω/sq 431 士 Ω/sq 426 土 4 Ω/sq The central part of the sheet resistance 433 Ω / sq 431 Ω / sq 426 Ω / sq 423 Ω / sq According to Table 1, use The case where the film forming apparatus 100 of the heater 2 is provided only on the lower side of the crystal holder 1 (sample 1), and the film forming apparatus 200 of the present invention are used only on the lower side of the crystal holder 1 The same result was obtained in the case where the heater 2 was heated (sample 2). Specifically, in the film formation of AlGaN 42, the main surface of the sapphire laminate structure 50 is curved with a large curvature so as to protrude in the concave direction, that is, downward. Further, regarding the sheet resistance, it is also known that the distribution of the sample 1 is soil 62 Ώ/sq ′. The distribution of the sample 2 is 52 Ω/sq ′ of the soil, and the homogeneity of the grown film cannot be ensured. Regarding sample 1, the value of the sheet resistance of the central portion of 142497.doc •22· 201105818 is about 433 Q/sq', which is a good result, but the value of the sheet resistance is close to the edge portion from the central portion. The y distribution becomes worse. Similarly, in the sample 2, the central portion of the main surface: the value of the sheet resistance was about 431 n/sq, which was a relatively good result, but was from the center. The p-knife is close to the edge portion, and the value of the sheet resistance becomes large, and the distribution is deteriorated. Therefore, it is known that the right side only heats the lower side of the crystal holder 1, and the temperature gradient (temperature difference) between the lower side and the upper side of the sapphire layer structure k 0 becomes larger. This bending is large and the temperature distribution in the main surface of the sapphire laminate structure 50 becomes large, and the distribution of sheet resistance is deteriorated. On the other hand, for example, as in the case of the sample 3, by heating the heaters on both the upper side and the lower side of the crystal holder, the curvature of the sapphire laminate structure 50 in the film formation of the A1GaN 42 becomes small. Further, the distribution of the sheet resistance was also improved to ± ι ω / ν, and the homogeneity of the grown film was improved. The sheet resistance in the center portion was also 426 Ω, which became good. However, if the power of the heater 7 on the upper side of the crystal holder 1 and the heater 2 on the lower side are substantially the same, the curvature is low but is curved in the concave direction. As the central portion of the autonomous surface approaches the edge, the value of the sheet resistance increases significantly. According to the results of the samples 1 to 3, it is understood that when there is a temperature gradient (temperature difference) between the lower side and the upper side of the main surface, the central portion of the sapphire laminate structure 5 is bent toward one side of the higher temperature. Therefore, in order to increase the power of the heater 7 on the upper side of the lower temperature in order to increase the curvature, as in the case of the sample 4, the curvature and the warpage value are substantially 〇, and the distribution of the sheet resistance is particularly improved to ±4. Ω/sq. The value of the sheet resistance in the center portion was also 423 卩, which became good. In this case, it was confirmed that even if the central portion of the autonomous surface 142497.doc •23·201105818 is close to the edge portion, the sheet resistance value does not increase significantly. As described above, the M〇vpE device can be independently controlled by using the control unit 30 that can independently control the heating temperature of the heater 7 as the first heating member and the heater 2 as the second heating member. The homogeneity of the film formed on the main surface of the sapphire laminate structure can be greatly improved. By heating the heaters on the lower side and the upper side of the main surface of the crystal holder 1, the temperature gradient (temperature difference) between the lower side and the upper side of the IL track 3 (refer to FIG. 2) is reduced. The generation of convection of the material gas in the % relative to the main surface of the sapphire laminate structure can be suppressed. Therefore, the material gas flows stably from the upstream side to the downstream side in the piping of the duct 3. Thus, the present inventors have considered that the film formation can be stably performed on the main surface of the sapphire laminate structure 50, and the characteristics such as the distribution of the sheet resistance of the sapphire laminate structure 50 are improved. Further, in addition to this, if the heat convection is suppressed, the addition reaction or the polymerization reaction due to the convection can be suppressed. Thus, the inventors of the present invention thought that the effect of improving the properties is also suppressed by suppressing the addition reaction or the polymerization reaction. Further, by heating the heating state of the lower side and the upper side of the main surface of the crystal seat 1, the temperature gradient (temperature difference) of the lower side of the main surface of the sapphire laminated structure 5 减小 is reduced, Then, the curvature as the degree of bending can be reduced. By reducing the curvature, the contact between the main surface of the sapphire laminate structure and the crystal seat 1 can be made independent of the position on the main surface of the sapphire laminate structure 50, that is, the central portion and the edge portion of the sapphire laminate structure 50 are substantially fixed. Therefore, the temperature of the main surface can be made substantially independent regardless of the position on the main surface. The inventors believe that the grown film can be substantially homogenized by keeping the temperature distribution on the main surface substantially fixed.
條件而變化。由此， 較好的是#當變更薄帛之成長條件時 使加熱器7及加熱器2之功率之比率獨立地變更 實施例2 而改善所成膜之積 例。藉由以下所示 實施例2係藉由本發明之成膜裝置，而 層構造之翹曲之量’並抑制龜裂的實施例 之方法而形成：於圖5所示之作為半導體基板1〇(參照圖^ 圖3)之5英吋之矽基板12(方位係沿（111)面之方向厚度為Change with conditions. Therefore, it is preferable that the ratio of the power of the heater 7 and the heater 2 is changed independently in the case of changing the growth condition of the thin layer, and the example of the film formation is improved. The second embodiment shown below is formed by the film forming apparatus of the present invention, and the method of the amount of warpage of the layer structure and the method of suppressing cracking is formed as the semiconductor substrate 1 shown in FIG. Refer to Fig. 3) for the 5 inch 矽 substrate 12 (the thickness of the orientation along the (111) plane is
nm之Α1Ν32、於其上積層40層膜厚為25 nm之GaN膜及膜厚 為5 nmiA1N膜之雙層積層62而使厚度共計為^ 。進 而於雙層積層62上積層膜厚為1>2 μηΐ2^Ν22之薄膜而成 之作為磊晶積層構造的矽積層構造6〇之樣品。 於矽基板12之主表面上成長氮化物半導體磊晶層之情形 4，由於成膜後之降溫時石夕基板12與所成長之氮化物半導 體磊晶層之熱膨脹係數不同，有時朝下凸起之翹曲會變 大’進而氮化物半導體磊晶層會產生龜裂。因此，於實施 例2中，對於矽基板12上成膜時之翹曲及龜裂之產生之有 無進行調查。 H2497.doc •25· 201105818 樣品5係使用圖6所示之自先前使用之成膜裝置100，而 形成圖5所示之石夕積層構造60。此處，使用圖6中未圖示之 熱電偶’測定石夕積層構造60中之矽基板12之主表面之溫度 T ’於上述分別使薄膜成膜時之T為1050°C之狀態下，使用 有機金屬氣相成長法（MOVPE法），藉此使A1N32、雙層積 層62及GaN22成臈。 樣品6係使用圖1所示之本發明之實施形態1中之成膜裝 置200 ’於僅使加熱器2加熱、而加熱器7不加熱之狀態 下’形成圖5所示之矽積層構造60。加熱器2之加熱溫度係 依照準備樣品5時之加熱溫度，具體而言，使用圖1中未圖 不之熱電偶’測定矽積層構造60中之矽基板12之主表面之 溫度Τ ’於上述分別成膜時之T為105(TC之狀態下，使用有 機金屬氣相成長法（M〇VPE&)，藉此使a1N32、雙層積層 62及GaN22成膜。關於其他成膜條件係依照樣品5之成膜 時。 樣品7係使用圖丨所示之本發明之實施形態1中之成膜裝 置 於僅使加熱器7進行加熱、而加熱器2不加熱之狀 態下’形成圖5所示之矽積層構造6〇〇加熱器7之加熱溫度 係依照準備樣品5時之加熱溫度，具體而言，使用圖i中未 圖不之熱電偶’測定矽積層構造60之矽基板12之主表面之 服度丁，於上述分別成膜時之T為1050。(：之狀態下，使用有 $金屬氣相^ι長法（M〇VpE；^)，藉此使A⑽2、雙層積層 62及GaN22成膜。關於其他成膜條件係依照樣品$之成膜 時。 H2497.doc • 26 - 201105818 對於藉由以上之次序而進行準備之樣品5〜7，測定沿矽 積層構造60之主表面之方向之、升溫時之翹曲之方向 (1050 c升溫時基板之魅曲）、升溫時之曲率（1〇5〇。〇升溫時 基板之曲率）、成膜後之翹曲之大小（成膜後之基板之翹曲 之里）、及龜裂之有無。曲率係使用作為模組5(參照.圖2)之 in-situ監控器而於矽基板12升溫至1〇5〇它為止之時間點進 行測定，關於翹曲則係於升溫至1〇5(rc為止之時間點、及 成膜結束之後，使用作為模組5iin_situ監控器來進行測 定。又，關於龜裂之有無係於成膜結束之後使用光學顯微 鏡來進行評估。下述表2表示測定至評估之結果。表2係總 結實施例2中之樣品5〜7之構成及測定資料之表。 [表2] ^"裝置 S品5 先前 " 加熱器加熱 1050°C升&_時基一 板之龜曲 僅加熱器2(下） 凹方向 不赞明用 僅加氣器2(下> 凹方向 本發明用 僅加熱器7(上） 凸方向 ilOU c升溫時基 板之曲率 成膜後之基板之— 勉曲之量 40 km"1 100 μηι 40 km'1 ------ 90 μηι -30 km'1 30 μιη 益 龜裂之為無 有 ϊ ' -------〜丨王"、明度1之卜側設置孝 加熱器2之成膜裝置⑽的情形（樣品5)、_面使用本發明之 成膜裝置2〇°一面僅使晶座1之下側之加熱器2加熱的㈣ (樣品…均為同樣之結果。具體而言，於石夕基板12升溫至 刪c為止之時間點’之後作為矽積層構造的之石夕基板1: 之主表面以向凹方向、即朝下㈣之方式，以較大之曲率 142497.doc •27· 201105818 (均為40 knT1)而彎曲。成膜結束後之樣品5及樣品6均產生 1 00 μπι左右之較大翹曲，且產生龜裂。 又’ 一面使用本發明之成膜裝置200—面僅使晶座1之上 側之加熱器7加熱的情形（樣品7)，於矽基板12升溫至 1050°C為止之時間點’之後作為矽積層構造60之矽基板12 之主表面以向凸方向、即中央部分向上側彎曲（朝上凸起） 的方式而彎曲，曲率之絕對值為30 km-〗。關於成膜結束後 之樣品7之翹曲為30 μιη，較樣品5、樣品6大幅度減小，且 未產生龜裂。 根據以上之結果，通常矽基板〗2上之氮化物半導體磊晶 層由於矽與氮化物半導體之熱膨脹係數的差，故而降溫時 谷易於凹方向產生翹曲、龜裂。但是，可知若進行通常之 成膜方法，即僅自矽積層構造6〇之下側進行加熱則矽積層 構造60會向凹方向較大·弯曲，而自矽積層構造的之上側進 行加熱’並抑制（矯正）矽積層構造6〇之凹方向上之彎曲， 使其反而向凸方向彎曲，可抑制成長後之矽積層構造60之 翹曲' 及龜裂之產生。又，藉由將樣品5、6與樣品7之彎 曲至翹曲之程度比較，由於矽積層構造6〇容易向凹方向翹 曲，故抑制凹方向上之翹曲亦可與抑制龜裂之產生相關 聯。 業者應考慮到此次所揭示之實施形態及實施例之全部均 為例示，而並非限制者。本發明之範圍並非由上述說明表 不’而是藉由中請專利範圍來表*，且與中請專利範圍均 等之含義及範圍内之所有變更均屬於本發明。 142497.doc -28· 201105818 產業上之可利用性 本發明之成膜裝置係藉由改善所成膜之基板之翹曲，而 改善基板之膜質之均質性，其作為抑制基板之龜裂之技術 而特別優異。 【圖式簡單說明】 圖1係表示本發明之實施形態丨中之利用氣相成長之成膜 裝置的内部之概要的剖面概略圖； 圖2係表示具備控制加熱器之溫度之控制部之成膜裝置 201的内部之概要的剖面概略圖； 圖3係表示本發明之實施形態2中之利用真空蒸鍍之成膜 裝置的内部之概要的剖面概略圖； 圖4係表示用以調查成膜後之薄膜之均質性之hemt磊晶 構造的積層構造之概略圖； 圖5係表示用以調查成膜後之薄膜之翹曲及龜裂之產生 的ΗΕΜΤ磊晶構造之積層構造的概略圖；及 圖6係表示自先前所使用之利用氣相成長之成膜裝置之 内部的概要之概略圖。 【主要元件符號說明】 晶座 2 3 4 5 6 加熱器 流道 原料氣體噴嘴 模組 加熱夾具 142497.doc -29- ^ 201105818 7 加熱器 10 半導體基板 11 盖寶石基板 12 矽基板 21 低溫GaN 22 GaN 30 控制部 32 A1N 42 AlGaN 50 藍寶石積層構造 60 石夕積層構造 62 雙層積層 71 努特生池 72 努特生池 100 成膜裝置 200 成膜裝置 201 成膜裝置 301 成膜裝置 142497.doc -30-The thickness of nm is 1Ν32, and 40 layers of a GaN film having a film thickness of 25 nm and a double layer of a film thickness of 5 nmiA1N film are laminated thereon to have a total thickness of ^. Further, a film having a film thickness of 1 > 2 μηΐ2^Ν22 was deposited on the double-layered laminate 62 to form a sample of the deposited layer structure of the epitaxial layer structure. In the case where the nitride semiconductor epitaxial layer is grown on the main surface of the germanium substrate 12, the thermal expansion coefficient of the litmus substrate 12 and the grown nitride semiconductor epitaxial layer are different depending on the temperature after film formation, and sometimes convex downward The warp will become larger, and the nitride semiconductor epitaxial layer will crack. Therefore, in Example 2, the presence or absence of warpage and cracking at the time of film formation on the ruthenium substrate 12 was investigated. H2497.doc • 25· 201105818 Sample 5 uses the film forming apparatus 100 shown in Fig. 6 from the prior art to form the stone layer structure 60 shown in Fig. 5 . Here, the temperature T′ of the main surface of the ruthenium substrate 12 in the shi-shi layer structure 60 is measured in a state in which the T at the time of forming the film is 1050° C., using the thermocouple ′ (not shown in FIG. 6 ). The organometallic vapor phase growth method (MOVPE method) is used to thereby form A1N32, the double layered layer 62, and the GaN 22 into a crucible. Sample 6 is formed by forming the deposition layer structure 60 shown in FIG. 5 in a state where only the heater 2 is heated and the heater 7 is not heated, using the film formation apparatus 200' in the first embodiment of the present invention shown in FIG. . The heating temperature of the heater 2 is determined according to the heating temperature at the time of preparing the sample 5, specifically, the temperature of the main surface of the crucible substrate 12 in the delamination layer structure 60 is measured using the thermocouple 'not shown in Fig. 1'. In the case of film formation, T is 105 (in the state of TC, an organic metal vapor phase growth method (M〇VPE &) is used, whereby a1N32, double layered layer 62, and GaN22 are formed into films. Other film forming conditions are in accordance with the sample. In the case of the film formation of 5, the sample 7 is formed by using the film forming apparatus according to the first embodiment of the present invention shown in Fig. 于 in a state where only the heater 7 is heated and the heater 2 is not heated. The heating temperature of the heater layer 7 is determined according to the heating temperature at the time of preparing the sample 5, specifically, the main surface of the crucible substrate 12 of the delamination layer structure 60 is measured using a thermocouple not shown in FIG. In the case of the above film formation, the T is 1050. In the state of the film, the metal gas phase method (M〇VpE; ^) is used, thereby making the A(10)2, the double layer laminate 62 and GaN 22 is formed into a film. Other film forming conditions are based on the film formation of the sample $ H2497.doc • 26 - 201105818 For the samples 5 to 7 prepared by the above procedure, the direction of warpage at the time of temperature rise in the direction of the main surface of the delamination layer structure 60 (the embossing of the substrate at the time of temperature rise of 1050 c), The curvature at the time of temperature rise (1〇5〇. the curvature of the substrate when the temperature is raised), the warpage after film formation (in the warpage of the substrate after film formation), and the presence or absence of cracks. The curvature is used as a mold. The in-situ monitor of group 5 (refer to Fig. 2) is measured at a time point when the substrate 12 is heated to 1 〇 5 〇, and the warpage is at a time point until the temperature is raised to 1 〇 5 (rc). After the completion of the film formation, the measurement was carried out using a monitor as a module 5iin_situ. The presence or absence of the crack was evaluated by using an optical microscope after the film formation was completed. Table 2 below shows the results of the measurement to the evaluation. 2 series summarizes the composition of the samples 5 to 7 in Example 2 and the table of the measurement data. [Table 2] ^"Device S product 5 Previous " Heater heating 1050 ° C liter & _ time base one turtle Song only heater 2 (bottom) concave direction is not praised with only aerator 2 (lower > Direction The present invention uses only the heater 7 (upper) convex direction ilOU c when the temperature of the substrate is filmed by the curvature of the substrate - the amount of distortion 40 km " 1 100 μηι 40 km'1 ------ 90 μηι - 30 km'1 30 μιη 益 裂 裂 ϊ - - - - - - - - - ϊ ϊ ϊ ϊ 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Using the film forming apparatus of the present invention, only the heater 2 on the lower side of the crystal holder 1 is heated (4) (samples are the same result). Specifically, the main surface of the Shih-hsien substrate 1 which is the structure of the raft layer after the temperature rises to the time point C after the removal of the stone substrate 12 is in the concave direction, that is, downward (four), with a large curvature. 142497.doc •27· 201105818 (both 40 knT1) and bent. Both Sample 5 and Sample 6 after the film formation were caused to have a large warpage of about 100 μπι, and cracks were generated. Further, when the film forming apparatus 200 of the present invention is used, only the heater 7 on the upper side of the crystal holder 1 is heated (sample 7), and the time after the temperature rise of the crucible substrate 12 to 1050 ° C is used as the accumulation layer. The main surface of the base plate 12 of the structure 60 is curved so as to be convex toward the convex direction, that is, the central portion is upwardly convex (upwardly convex), and the absolute value of the curvature is 30 km-〗. The warp of the sample 7 after the film formation was 30 μm, which was significantly smaller than that of the sample 5 and the sample 6, and no crack was generated. According to the above results, the nitride semiconductor epitaxial layer on the substrate 22 generally has a difference in thermal expansion coefficient between the ruthenium and the nitride semiconductor, so that the valley tends to be warped or cracked in the concave direction when the temperature is lowered. However, it is understood that when the normal film forming method is performed, that is, heating is performed only from the lower side of the entangled layer structure 6 矽, the entangled layer structure 60 is made larger and curved in the concave direction, and is heated from the upper side of the entangled layer structure. The bending of the entangled layer structure in the concave direction is suppressed (corrected) so as to be bent in the convex direction, and the occurrence of warpage and cracking of the grown layer structure 60 after growth can be suppressed. Further, by comparing the bending of the samples 5, 6 and the sample 7 to the degree of warpage, since the entangled layer structure 6 〇 is easily warped in the concave direction, suppression of warpage in the concave direction can also suppress generation of cracks. Associated. The embodiments and examples of the embodiments disclosed herein are intended to be illustrative and not restrictive. The scope of the present invention is defined by the scope of the claims and the scope of the claims, and all modifications within the meaning and scope of the claims are intended to be within the scope of the invention. 142497.doc -28·201105818 INDUSTRIAL APPLICABILITY The film forming apparatus of the present invention improves the film quality of the substrate by improving the warpage of the substrate to be formed, and serves as a technique for suppressing cracking of the substrate. Especially excellent. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an outline of a inside of a film forming apparatus using vapor phase growth in an embodiment of the present invention. Fig. 2 is a view showing a control unit having a temperature for controlling a heater. FIG. 3 is a schematic cross-sectional view showing an outline of the inside of a film forming apparatus using vacuum deposition in the second embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing the inside of the film forming apparatus using vacuum deposition in the second embodiment of the present invention. FIG. 5 is a schematic view showing a laminated structure of a germanium epitaxial structure for investigating warpage and cracking of a film after film formation; FIG. Fig. 6 is a schematic view showing an outline of the inside of a film forming apparatus which has been used in the vapor phase growth. [Main component symbol description] Crystal holder 2 3 4 5 6 Heater flow path material gas nozzle module heating jig 142497.doc -29- ^ 201105818 7 Heater 10 Semiconductor substrate 11 Gemstone substrate 12 矽 Substrate 21 Low temperature GaN 22 GaN 30 Control part 32 A1N 42 AlGaN 50 Sapphire laminated structure 60 Shixi laminated structure 62 Double layered layer 71 Nutte pool 72 Nurtsen pool 100 Film forming apparatus 200 Film forming apparatus 201 Film forming apparatus 301 Film forming apparatus 142497.doc - 30-