201105597 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種硫化鎘薄膜製作方法，尤其是利用 化學水浴沉積法。 【先前技術】 硫化鎘是一種寬能隙（Eg=2.26〜2.5eV)的II-VI族 半導體材料。主要應用於太陽電池、發光二極體、光導 _ 體（Photoconductor)感應器、光觸媒以及其他光電元 件領域。目前已知的製備硫化鎘薄膜的方法有：化學水 浴沈積法（chemical bath deposition)、微波加熱化 學水浴沈積法（microwave-assisted chemical bath deposition)、真空蒸鍍法（vacuum evaporation)、 濺鑛法（sputtering)、化學氣相沈積法（chemicai vapor deposition)以及喷霧熱解法（spraypyr〇iySis)等方 法。 • 化學水浴沈積法是將玻璃基板浸泡於含有鎘離子與硫離 子的稀釋溶液中，使硫化鎘薄膜自動沈積在玻璃基板上。化學 水浴沈積法的優點為成本低、易於大規模量產、製程簡單且操 作容易。 因此，本發明提出一種能精確控制硫化鎘薄膜製作方 法，以形成厚度均一的高品質硫化鎘薄膜，並提高硫化鎘 薄膜對玻璃基板的附著力。 201105597 【發明内容】 本發明之主要目的在提供一種硫化鎘薄膜製作方法， 利用化學浴沈積法形成硫化锅薄膜，該化學浴包括含硫化 合物與含錢化合物，藉氨水調節化學浴成驗性，並添加緩 衝鹽，同時餅並加熱’再將玻璃基板浸泡至化學浴中， 使得浸泡時間增加時’硫化鑛薄膜厚度的增加不會形成雙 重結構，藉以強化硫化鎘薄膜對玻璃基板的附著力，提高 • 硫化锅薄膜的品質。化學浴中錢離子的總含量為硫化錢薄 膜中鑛含量的ίο〜_倍，硫離子的齡量為硫化鶴薄膜 中硫含量的5〜1〇〇倍。氨水的濃度為2〇~3〇%，化學浴的最 佳pH值為pH8〜11’加熱溫度為60〜9〇ΐ，且浸泡時間為5 6〇 分。 因此’本發明的方法可形成厚度1〇〜1〇〇〇測的硫化鎘 薄膜，且對玻璃基板具有良好的附著力。 _ 【實施方式】 以下配合圖式及元件符號對本發明之實施方式做更 詳細的說明，俾使熟習該項技藝者在研讀本說明書後能據 以實施。 參閱第一圖，本發明硫化鎘薄膜製作方法的流程圖。 如第一圖所示，本發明的硫化鑛薄獏製作方法係由步驟 S10開始，在步驟S10中，添加含録離子之化學藥品與含 硫離子之化學藥品於純水中，其中含鎘離子之化學藥品可 為硫酸錫、醋酸鎘、硝酸鎘以及氣化鎘的至少其中之一， 201105597 而含硫離子之化學藥品可為硫脲、硫化鈉以及硫代乙醯氨 的至少其中之一。鎘離子的總含量為硫化鎘薄膜中鎘含量 的10〜500倍，硫離子的總含量為硫化鎘薄膜中硫含量的 5〜100倍。接著進入步驟s2〇，添加氨水以保持最佳pH 值，其中最佳pH值為8〜11 ,並進入步驟S30。在步驟S30 中，添加緩衝鹽以改善鍍膜品質，其中緩衝鹽可為氣化 銨、醋酸銨、硝酸銨以及硫酸録的至少其中之一。接著在 步驟S40中，進行攪拌並加熱以形成化學浴，其中加熱溫 • 度為6〇〜90°C，並進入步驟S50，將玻璃基板置入化學浴 中浸泡5〜60分以進行鍍膜，並在玻璃基板上形成硫化鎘 薄膜，並在步驟S60中，以純水清洗玻璃基板與硫化鎘薄 膜，以去除殘留的雜質與化藥品，最後在步驟中，以 氮氣吹乾玻璃基板與硫化鑛薄膜而完成硫化錦薄膜的製 作。 步驟S10與步驟S60中所使用的純水可為去離子水， 而步驟S20中所使用的氨水可為濃度2〇〜3〇%。本發明的硫 • 化鎘薄膜製作方法可製作出厚度為KHOOOnm的硫化鎘薄 膜’且對玻璃基板具有良好的附著力。 以上所述者僅為用以解釋本發明之較佳實施例，並非 企圖據以對本發明做任何形式上之限制，是以，凡有在相 同之發明精神下所作有關本發明之任何修飾或變更，皆仍 應包括在本發明意圖保護之範疇。 【圖式簡單說明】 第一圖為本發明硫化鎘薄膜製作方法的流程圖。 201105597 【主要元件符號說明】 S10添加含鎘離子之化學藥品與含硫離子之化學藥品 S20添加氨水以保持最佳pH值 S30添加緩衝鹽 S40攪拌並加熱以形成化學浴 S50將玻璃置入化學浴中浸泡以進行鍍膜 S60以純水清洗 S70以氮氣吹乾201105597 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for producing a cadmium sulfide film, in particular, a chemical water bath deposition method. [Prior Art] Cadmium sulfide is a II-VI semiconductor material having a wide energy gap (Eg = 2.26 to 2.5 eV). Mainly used in solar cells, light-emitting diodes, photoconductor sensors, photocatalysts and other optoelectronic components. Currently known methods for preparing cadmium sulfide films are: chemical bath deposition, microwave-assisted chemical bath deposition, vacuum evaporation, splashing ( Methods such as sputtering), chemical vapor deposition (chemicai vapor deposition) and spray pyrolysis (spraypyr〇iySis). • Chemical bath deposition is performed by immersing a glass substrate in a dilute solution containing cadmium ions and sulfur ions to deposit a cadmium sulfide film on a glass substrate. Chemical water bath deposition has the advantages of low cost, easy mass production, simple process and easy operation. Therefore, the present invention proposes a method for precisely controlling the cadmium sulfide film to form a high-quality cadmium sulfide film having a uniform thickness and to improve the adhesion of the cadmium sulfide film to the glass substrate. 201105597 SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for preparing a cadmium sulfide film, which comprises forming a vulcanization pot film by a chemical bath deposition method, the chemical bath comprising a sulfur compound and a money-containing compound, and adjusting the chemical bath by ammonia water, And adding the buffer salt, while the cake is heated and then immersing the glass substrate into the chemical bath, so that the increase of the thickness of the sulfide ore film does not form a double structure when the soaking time is increased, thereby strengthening the adhesion of the cadmium sulfide film to the glass substrate, Improve • Quality of vulcanized pan film. The total content of money ions in the chemical bath is ίο~_ times the content of the ore in the vulcanized money film, and the age of the sulfur ions is 5 to 1 times the sulfur content in the vulcanized crane film. The concentration of ammonia water is 2〇~3〇%, the optimum pH of the chemical bath is pH 8~11', the heating temperature is 60~9〇ΐ, and the soaking time is 5 6〇. Therefore, the method of the present invention can form a cadmium sulfide film having a thickness of 1 Å to 1 Å and has good adhesion to a glass substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described in more detail below with reference to the drawings and the reference numerals, which can be implemented by those skilled in the art after reading this specification. Referring to the first figure, a flow chart of a method for producing a cadmium sulfide film of the present invention. As shown in the first figure, the method for preparing a sulfide ore thinner according to the present invention is started in step S10, in which a chemical containing a recording ion and a chemical containing sulfur ions are added to pure water, wherein the cadmium ion is contained. The chemical may be at least one of tin sulfate, cadmium acetate, cadmium nitrate and cadmium gasification. 201105597 The chemical containing sulfur ions may be at least one of thiourea, sodium sulfide and thioacetammonium. The total content of cadmium ions is 10 to 500 times that of cadmium sulfide film, and the total content of sulfur ions is 5 to 100 times that of cadmium sulfide film. Next, the process proceeds to step s2, and ammonia water is added to maintain an optimum pH, wherein the optimum pH is 8 to 11, and the process proceeds to step S30. In step S30, a buffer salt is added to improve the coating quality, wherein the buffer salt may be at least one of vaporized ammonium, ammonium acetate, ammonium nitrate, and sulfuric acid. Next, in step S40, stirring and heating are performed to form a chemical bath, wherein the heating temperature is 6 〇 to 90 ° C, and the process proceeds to step S50, and the glass substrate is placed in a chemical bath to be immersed for 5 to 60 minutes for coating. And forming a cadmium sulfide film on the glass substrate, and in step S60, cleaning the glass substrate and the cadmium sulfide film with pure water to remove residual impurities and chemicals, and finally, in the step, drying the glass substrate and the sulfide ore with nitrogen gas The film is used to complete the production of a vulcanized film. The pure water used in the step S10 and the step S60 may be deionized water, and the ammonia water used in the step S20 may be a concentration of 2 〇 to 3 〇%. The method for producing a cadmium sulfide film of the present invention can produce a cadmium sulfide film having a thickness of KHOOOnm and has good adhesion to a glass substrate. The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a flow chart of a method for producing a cadmium sulfide film of the present invention. 201105597 [Description of main component symbols] S10 Adds cadmium-containing chemicals and sulfur-containing chemicals S20 Adds ammonia to maintain optimum pH S30 Add buffer salt S40 Stir and heat to form chemical bath S50 Place glass into chemical bath Soaking for coating S60 Washing S70 with pure water and drying with nitrogen