TW201104911A - LED lighting apparatus and LED array chip - Google Patents

Abstract

A LED lighting apparatus includes a base, an LED array chip and a rectification unit. The LED array chip has a growth substrate and a plurality of light emitting diodes which is electrically connected disposed on the growth substrate. Each of the light emitting diodes has a plurality of semiconductor layers stacked on the growth substrate. The rectification unit is electrically connected to the light emitting diodes, and it converts an alternating current signal into a direct current signal. The light emitting diodes emit the light as receiving the direct current signal provided from the rectification unit. Furthermore, the rectification unit and the LED array chip are separately disposed on different regions of the base.

Description

201104911 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode lighting device and a light-emitting diode array chip, and particularly relates to a light-emitting diode that is converted into a direct current driving using alternating current Illumination device and LED array wafer. [Prior Art] With the continuous development of optoelectronic technology, the light-emitting diodes, which are one of the light-emitting sources, have been widely used in various fields and occupy a pivotal position in the optoelectronic industry. At present, the power source generally available around the world is AC. Since the voltage polarity of the AC & electric power changes alternately with time, it is difficult to apply it directly to the LED, especially if the LED is used for illumination. The purpose of the light source. Taiwan Patent No. 1302039 proposes an alternating current loop light-emitting diode structure comprising a set of alternating current micro-crystal light-emitting diode modules formed on a chip, and the alternating micro-grain light-emitting diode The body module is connected in parallel with the two micro-crystal light-emitting diodes in a reverse direction, and an alternating current can be applied to cause the two micro-crystal light-emitting diodes to be illuminated by positive and negative half-waves. However, in the conventional light-emitting diode structure having an alternating current loop, since each of the light-emitting diode micro-crystals can emit light only under the condition of forward 戋 reverse bias in each alternating current period, in other words, Each hair product only accounts for -half of the surface area of the wafer, while the minute crystal grains in the other half area do not emit light, thus causing waste of the light-emitting area. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode illumination device and a light-emitting diode array wafer, which have the advantages of high luminous efficiency, large light-emitting area, and easy replacement of damaged elements of 201104911. An embodiment of the present invention provides a light emitting diode illumination device including a bottom plate, a light emitting diode array chip, and a rectifying unit. The light emitting diode array chip has a growth substrate and a long substrate. And a plurality of light emitting diodes electrically connected to each other, each of the light emitting diodes has a plurality of semiconductor layers stacked on the growth substrate, the rectifying unit is electrically connected to the light emitting body, and the rectifying unit transmits an AC power signal The light source is converted into a direct current power signal, so that the light emitting diodes receive a direct current power signal and emit a light source, wherein the rectifying unit and the light emitting diode array chip are separately disposed on different regions of the bottom plate. In an embodiment of the invention, the semiconductor layer of each of the light-emitting diodes includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially stacked on the growth substrate, wherein each of the light-emitting diodes is further A first bonding pad is formed on the n-type semiconductor layer, and a second pad is formed on the p-type semiconductor layer. In an embodiment of the invention, the 'rectifier unit includes a Wheatstone Bridge composed of at least four rectifying elements, each of which is fixed to the bottom plate by solder bonding or adhesive bonding, respectively. . In one embodiment of the present invention, the Wheatstone bridge includes a first current path and a second current path, and a first rectifying element, a light emitting diode array chip, and a third rectifying element are located at the first current. And a fourth rectifying element, a light emitting diode array chip and a second rectifying element are located on the second current path and are connected in series in series. In one embodiment of the present invention, the rectifying unit further includes a first conductive 201104911 pattern and a second conductive pattern ′ respectively disposed on the bottom plate, wherein the first conductive pattern is electrically connected to one end of the AC power signal and the first And a second rectifying element, wherein the second conductive pattern is electrically connected to the other end of the AC power signal and the third rectifying element and the fourth rectifying element. In one embodiment of the present invention, the rectifying unit further includes a third conductive pattern and a fourth conductive pattern respectively disposed on the bottom plate, and the third conductive pattern is electrically connected to one of the LED arrays. The electrode is connected to the first choke element and the fourth rectifying element, and the fourth conductive pattern is electrically connected

The other electrode of the photodiode array wafer is connected to the second rectifying element and the third rectifying element. In one embodiment of the invention, the rectifying elements are Schottky Barrier Diodes (SBDs). In an embodiment of the invention, the rectifying elements comprise germanium semiconductor components or III-V compound semiconductor components. In one embodiment of the invention, the AC power signal is 90-120 volts, 180-240 volts, or 270-330 volts.

In one embodiment of the invention, the light emitting diode systems formed in the array of light emitting diode arrays are connected in series or in parallel. BB In one embodiment of the invention, the light emitting diode systems formed in the array of light emitting diode arrays are connected in series and in parallel. In an embodiment of the invention, the material of the growth substrate comprises sapphire, lanthanum carbide (SiC), shixi (Si), zinc oxide (Zn 〇), 绅化录 ((5) 八 and spinel ( In one embodiment of the present invention, the bottom plate is made of a thermal conductive material 201104911. In one embodiment of the invention, the bottom plate is a circuit board, a germanium substrate, a -Taman substrate or A metal substrate. In one embodiment of the invention, the bottom plate further includes a heat s". The light emitting diode array chip is disposed on the heat dissipation block to provide heat dissipation for the light emitting diode chip. The bottom plate is a circuit board, a stone substrate or a ceramic substrate. • In the embodiment of the invention, the material of the semiconductor layers of the light-emitting diodes includes gallium nitride, gallium nitride, germanium nitride At least one of gallium and copper gallium nitride. In an embodiment of the invention, the semiconductor layer of the light-emitting diode is formed by a stupid crystal. In one embodiment of the invention, the light-emitting diode array The wafer is fixed to the bottom plate by solder bonding or adhesive bonding In an embodiment of the invention, the light emitting diode systems formed in the LED array wafer have the same wavelength or different wavelengths. • In an embodiment of the invention, the LED array wafer is further included in At least one phosphor material is disposed on the light emitting diodes. In an embodiment of the invention, the light emitted by the light emitting diodes is mixed with the light emitted by the phosphor material to form white light. In one embodiment, the light emitted by the light-emitting diodes includes blue light and ultraviolet light. In one embodiment of the invention, 'when the light emitted by the light-emitting diodes is blue light, the fluorescent powder material is yellow fluorescent light. Powder or red fluorescent powder plus green 201104911 fluorescent powder. In one embodiment of the invention, when the light emitted by the light emitting diodes is ultraviolet light, the fluorescent powder material is yellow fluorescent powder plus blue fluorescent light. Powder or red fluorescent powder plus green fluorescent powder and blue fluorescent powder. One embodiment of the present invention provides a light emitting diode lighting device comprising a light emitting diode array chip and a rectifying unit, the light emitting The diode array fin has a growth substrate and a plurality of light-emitting diodes disposed on the growth substrate and electrically connected, each of the light-emitting diodes having a plurality of semiconductor layers stacked on the growth substrate The rectifying unit is electrically connected to the light emitting diodes, and the rectifying unit converts an alternating current power signal into a direct current power signal to enable the light emitting diodes to receive the direct current power signal and emit a light source. The rectifying unit is not disposed on the growth substrate. In an embodiment of the invention, the rectifying unit comprises a Wheatstone Bridge composed of at least four t elements, wherein the rectifying elements are not Further, an embodiment of the present invention provides a light emitting diode array chip for receiving a DC power signal and emitting a light source, the LED array chip including a growth substrate and a plurality of light emitting a diode, the light emitting diodes are disposed on the growth substrate and electrically connected to each other, and each of the light emitting diodes has a plurality of semiconductor layers stacked on the growth substrate . In one embodiment of the invention, the semiconductor layer of each of the light-emitting diodes includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and is sequentially stacked on the growth substrate. In one embodiment of the present invention, each of the light emitting diodes further includes a bonding pad of 201104911 formed on the n-type semiconductor layer, and a second germanium pad formed on the p On the semiconductor layer. In an embodiment of the invention, the material of the growth substrate comprises sapphire, bismuth carbide (SiC), bismuth (Si), zinc oxide (Zn〇), bismuth; gallium (GaAs) and spinel. (MgA1204). In one embodiment of the invention, the light emitting diode systems are connected in series or in parallel. / In an embodiment of the invention, the light emitting diode packages

Connected groups, each of which has a plurality of aforementioned light-emitting diodes connected in series. X In one embodiment of the invention, the light-emitting diodes comprise a plurality of front-connected diodes in a plurality of series connected to each other having a complex & parallel connection. In an embodiment of the invention, the light emitting diodes comprise a plurality of series connected in series, wherein each "group" has a plurality of parallel connections

The second group, each of the second groups has a plurality of the aforementioned diodes connected in series. In one embodiment of the present invention, the light emitting diodes include at least one first group and a plurality of parallel connected second groups, and the first group is connected in series with the two groups, the first group The group has at least one of the series connected light emitting diodes, and the second group has at least a series connected light diode. In an embodiment of the invention, the light emitting diodes have the same wavelength. 201104911. In an embodiment of the invention, the method further includes disposing at least one phosphor material on the light emitting diodes. In an embodiment of the invention, the light emitted by the light-emitting diodes is mixed with the light emitted by the phosphor material to form white light. In an embodiment of the invention, the light emitted by the light emitting diodes includes blue light and ultraviolet light. In an embodiment of the invention, when the light emitted by the light emitting diodes is blue light, the fluorescent powder material is yellow fluorescent powder or red fluorescent powder plus green fluorescent powder. In an embodiment of the invention, when the light emitted by the light emitting diodes is ultraviolet light, the fluorescent powder material is yellow fluorescent powder plus blue fluorescent powder or red fluorescent powder plus green fluorescent powder. Add blue phosphor powder. Based on the above, the LED device of the embodiment of the present invention separates the LED array and the rectifying unit from different regions of the substrate, and thus, when the rectifying device or the LED array is damaged, In this case, only the damaged electronic components in the device need to be replaced, so that it is easy to rework. In addition, since the LED lighting device of the embodiment of the present invention is rectified by using a Wheatstone bridge composed of at least four rectifying elements, the rectified DC power signal can make each of the LEDs The array continues to emit light, which can increase the luminous efficiency of the illumination device and the overall uniform illumination effect. The above described features and advantages of the present invention will be more apparent from the following detailed description of the appended claims. [Embodiment] 201104911 FIG. 1 is a plan view of a light-emitting diode lighting device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the light-emitting diode lighting device of FIG. 1, and FIG. 3 is a light-emitting diode of FIG. 1 and FIG. The equivalent circuit diagram of the polar lighting device. First, the light-emitting diode illuminating device of the present invention mainly includes a bottom plate 10, a light-emitting diode array chip 2, a rectifying unit 30' rectifying unit 30, and a light-emitting diode. The array wafer 2 is disposed on the substrate 10, and the rectifying unit 3 and the LED array 2 are electrically connected to each other by the wires L. In the present embodiment, the substrate 10 is a circuit board, a substrate or a ceramic substrate for carrying the LED array 2 and the rectifying unit 30'. The ceramic substrate material is alumina (A1203). In other embodiments, a heat dissipating block 50 is disposed in the bottom plate 10, and the light emitting diode array chip 20 is disposed on the heat dissipating block 5〇. Therefore, when the light emitting diode array chip 20 generates heat during operation, The thermal block 50 is quickly excluded from the device by the heat sink block 50, thereby improving the reliability of the light-emitting diode lighting device of the present invention. In addition, in other embodiments, the bottom plate may be formed of a heat conductive material such as a metal substrate, and the heat conductive material provides a good heat dissipation path for the light emitting diode array chip 20 and the rectifying unit 3 . In addition, the light-emitting diode array chip 2 includes a growth substrate 21 and first light-emitting diodes 20-1 to η light-emitting diodes disposed on the growth substrate 21 and connected in series to each other. 2〇·η. The light emitting diode may be a blue light emitting diode or an ultraviolet light emitting diode, and the blue light emitting diode emits a wavelength range of, for example, 430 nm to 480 nm, and the ultraviolet light emitting diode & 201104911 emitting wavelength range For example, at 360 nm to 415 nm. Each of the light-emitting diodes includes an n-type semiconductor layer 25, an active layer 26, and a p-type semiconductor layer 27 which are sequentially stacked on the growth substrate 21. In the present embodiment, the material of the growth substrate 21 may be, for example but not limited to, sapphire (tetra) pphire), tantalum carbide (SiC), bismuth (si), oxidized (Zn), gallium arsenide (GaAs), and spinel. (MgAl2〇4), etc., and the material of the n-type semiconductor layer 25, the active layer %, and the p-type semiconductor layer 27 is a binary, ternary or quaternary semiconductor material including, not limited to, gallium nitride, aluminum nitride Gallium, indium gallium nitride or aluminum indium gallium nitride, etc., in other embodiments, the n-type semiconductor layer 25, the active layer 26, and the p-type semiconductor layer 27 may be composed of other materials. It is to be noted that the light-emitting diode structure used in the light-emitting diode illuminating device of the invention uses the growth substrate 21 as a substrate, and forms an n-type semiconductor layer 25 of a stacked structure in an epitaxial manner. The layer 26 and the germanium-type semiconductor layer 27 are grown on the substrate 21, however, the semiconductor layer of the light-emitting diode of the present invention is not limited to being fabricated in a crystal form, and other semiconductor layer deposition methods well known in the art are also Within the scope of the invention. Of course, the light-emitting diode of this embodiment may comprise a homogenous structure or a heterostructure. In addition, each of the light-emitting diodes of the illumination device of the present invention has a first bonding pad 28 and a second bonding pad 29 formed on the n-type semiconductor layer 25 and the p-type semiconductor layer, respectively. On the 27th, the first light-emitting diode 2 (the first one of the M-type pads is electrically connected to the second pad 29 of the adjacent light-emitting diode by the wire L, and so on, the n-th light-emitting diode The first pad of the body is electrically connected to the second pad 29 of the nth light emitting diode 2〇-n by the wire L. 201104911 In addition, the light emitting diode of the light emitting diode device of the present invention The polar array wafer 20 includes forming at least one phosphor layer 22 on each of the LEDs, and the phosphor layer 22 is formed by, for example, gas spraying, ultrasonic vibration or dispensing. If the method of gas spraying is used, a thickness of the phosphor powder material layer 22 is formed on the surface of each of the light-emitting diodes of the light-emitting diode array wafer 20. The phosphor powder material layer 22 is filled with At least one phosphor material, the phosphor material is exposed to the LED array 20 After the excitation, it will be converted into light of different wavelengths emitted by the LED array 20, such as yellow, red, and green visible light. The phosphor material of the phosphor material layer 22 may be pushed by the yttrium garnet. The transcript 'for example is TAG:Ce or YAG:Ce; or a phosphor based on citrate, such as (SrBa)Si04:Eu2+, (SrBa)Si(OCl)4:Eu2+, (SrBa)Si04_xClx :Eu2+; or oxynitride phosphor 'for example, (SrBaCa)Si202N2, (SrBaCa)Si2(OCl)2N2. In the light-emitting diode lighting device of the present invention, the light-emitting diode array chip 20 emits light two The light source emitted by the polar body mixes the phosphor material of the phosphor powder material layer 22 after being excited and converted to a light source to obtain a white light illumination device. For example, when the light emitted by the light emitting diode is blue light, the fluorescent powder material is The yellow fluorescent powder, or when the light emitted by the light emitting diode is blue light, the fluorescent powder material is red fluorescent powder plus green fluorescent powder, and when the light emitted by the light emitting diode is ultraviolet light, the fluorescent powder The material is yellow fluorescent powder plus blue fluorescent powder or red fluorescent powder plus green fluorescent powder plus Fluorescent powder. In addition, in consideration of factors such as luminous efficiency or color rendering index, it is possible to select a combination of two or more kinds of phosphors. 13 201104911 Undertake the above-mentioned light-emitting diodes After the array wafer 20 is fabricated, the LED array 20 is fixed to the substrate 1 by solder bonding or adhesive bonding, and the rectifying unit 3 is also disposed on the substrate 10 but is illuminated. The diode array wafer 20 is located in different regions: wherein the 'rectifier unit 30 is fixed to the substrate 10 by solder bonding or adhesive bonding and is disposed at a distance from the LED array wafer 20. 'When the rectifying unit 30 or the LED array is damaged, when the 丨 wafer 2 〇 is damaged, it is only necessary to replace the damaged electronic components in the device, so it is much simpler in heavy work. §1, FIG. 2 and FIG. 3, in a preferred embodiment of the illumination device of the present invention, the rectifying unit 30 is composed of at least a first rectifying element 301, a second rectifying element 302, and a third Wheatstone bridge composed of rectifying element 303 and a fourth rectifying element 304 (heatston

Bridge), and each of the rectifying elements 301, 302, 303, and 304 is disposed on the bottom plate 10, respectively. In this embodiment, the rectifying elements 301-304 may be Schottky Barrier Diodes (SBDs). In other embodiments, the rectifying elements 301-304 may be germanium semiconductor components or III-V compound semiconductor components. . It is to be noted that, since the reverse breakdown voltage of the germanium semiconductor element is 3000V-6000V, and the reverse breakdown voltage of the III-V compound semiconductor is 20V-30V, in the present invention, the rectifying elements 301-304 are preferably used. In this way, the semiconductor element can withstand relatively high reverse surges, thereby improving the reliability of the illumination device of the present invention. The rectifying unit 30 of the present invention is configured to convert the received AC power signal 201104911 (AC) into a Nuo Wei shouting (DC), and a plurality of LEDs of the LED to the LED array 2G. Each _light-emitting diode receives a DC power signal after the job change and turns on and emits a light. In the embodiment of the present invention, Qian (4) Xunxian 9 (M2 〇 volt, just -240 volts or 270 _ 33 volts. The preferred embodiment of the plurality of rectifying elements 301-304 of the rectifying unit 3 系 is as shown in the figure] As shown in FIG. 2 and FIG. 3, it should be noted that the number of implementations of the rectifying elements 301-304 of the rectifying unit 3 of the present invention can be adjusted according to actual needs, and FIG. 2 and FIG. 3 only show A preferred embodiment of the rectifying unit of the present invention, but the number of rectifying elements is not limited to that shown in the drawings. _ It is noted that the rectifying unit of the present invention has a first current path from Ia and a second current. The path Ib, wherein the first rectifying element 3 〇丨, the illuminating: the polar body array chip 20 and the third rectifying element 3 〇 3 are located on the first current path Ia and connected in series, and the fourth rectifying element 3 〇 2 The light-emitting diode array chip 2 and the second rectifying element are located on the second flow path pinch lb and are connected in series in series. Thus, when an alternating voltage signal is applied to the illumination device of the present invention, the time is If the point is, for example, a positive period, the current will flow through the first The path turns on the light-emitting diode array chip 20 and emits light. When the next time point is, for example, a negative period, a current flows through the second path Ib to turn on the light-emitting diode array chip 2G and emit light. Therefore, the illumination device of the present invention is provided by the first rectifying element 3 (1), the second integral (9) member 3, the second rectifying portion 303, and the fourth rectifying element of the rectifying unit 30 when the light source voltage signal is supplied. After the rectification of 3〇4, the light-emitting diode of the light-emitting diode_chip can be turned on, so that the state of illumination can be maintained for 15201104911, thereby improving the overall luminous efficiency of the illumination device. The lighting device further includes a first conductive pattern

40 and a fourth conductive pattern 43 are respectively disposed on the bottom plate 10, and the first conductive pattern 40 is electrically connected to the first rectifying element 301 and the second rectifying element 302 by the wire L. The alternating current signal is input to the first rectifying element 301 via the first conductive pattern 40 and flows through the light emitting diode array chip 20 and the third rectifying element 303. The fourth conductive pattern 43 is electrically connected to the third rectifying element 303 and the fourth rectifying element 3〇4 via the wire L, and the alternating current signal is input from the fourth conductive pattern 43 to the fourth rectifying element 3〇4, and flows through the light. The diode array chip 20 and the second rectifying element 302. In addition, the rectifying unit of the present invention further includes a second conductive pattern 41 and a third conductive pattern 42 respectively disposed on the bottom plate 1 , and the second conductive pattern 41 is electrically connected to the LED array 20 by the wire L. One of the electrodes is connected to the first rectifying element 301 and the fourth rectifying element 〇4, and the third conductive pattern 42 is electrically connected to the other electrode of the illuminating diode array chip 2 and the second rectifying element 302 by the wire L Three rectifying elements. Next, please refer to FIG. 4, which is an equivalent circuit diagram of a light-emitting diode according to another embodiment of the present invention. The difference between the embodiment and the above embodiment is that the light-emitting diodes in the light-emitting diode array chip 2 are not limited to the series connection of the light-emitting diode array of the light-emitting diode array chip in FIG. Double-row series_parallel connection, as such, the light-emitting diode used in the illumination device of the present invention may be monochromatic light or multi-color light, so the quantity side but the smoke wavelength, such as the light-emitting diode of the record Achieve the effect of mixing light. 201104911 Of course, the light-emitting diodes in the LED array are not limited to single-row series connection or double-row series array parallel connection, and the light-emitting diodes can be connected in series and in parallel with each other, as shown in the figure. 6 and Figure 7 are shown. 5 is an equivalent circuit diagram of a light-emitting diode lighting device according to still another embodiment of the present invention, wherein the light-emitting diode includes at least one first group and a plurality of second groups connected in parallel, the first group Connecting with the second group in series with each other in the first group having two LEDs connected in series, respectively located in the upper and lower positions of the second group, and having multiple series in each second group Connected light-emitting diodes. * FIG. 6 is a diagram showing an equivalent of a light-emitting diode lighting device according to still another embodiment of the present invention, wherein the light-emitting diode includes a plurality of groups connected in series, and two parallel groups in the parent group Connected light-emitting diodes. FIG. 7 is not an equivalent circuit diagram of the light-emitting diode P-recording of the present invention. The light-emitting diode includes a plurality of first groups connected in series, and each of the first groups has a parallel connection. A plurality of second groups, and in each of the second groups, a plurality of light-emitting diodes connected in series. h, since most of the light-emitting diodes of the LED array of the present invention are connected in series in a single row 'as shown in FIG. 3; or in a double-row series connected in parallel as shown in FIG. 4; or in series and in parallel For the connection method, refer to FIG. 6 and FIG. 7. Therefore, the voltage and the current received by each of the LED arrays will be fixed to the 'then', so that the expected life of each of the LEDs can be lifted. Time) is roughly the same. In summary, the LED lighting device of the embodiment of the present invention is 17 201104911

The light-emitting diode array chip and the rectifying unit are separately disposed on different regions of the bottom plate. Therefore, when the rectifying element or the LED array chip is damaged, only the damaged electronic components in the device are replaced, so that it is easy to rework or Renovation. In addition, since the LED lighting device of the embodiment of the present invention is rectified by using a Wheatstone bridge composed of at least four rectifying elements, the rectified DC power signal can make each of the LEDs The array continues to emit light, which can increase the luminous efficiency of the illumination device and the overall uniform illumination effect. The present invention has been disclosed in the above embodiments, and it is not intended to limit the invention to those skilled in the art, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the present invention is defined by the scope of the appended claims. [FIG. 1 is a schematic plan view of a light-emitting diode according to an embodiment of the present invention. x Figure 2 is a schematic cross-sectional view of the illuminating diode lighting device of Figure 1. 3 is an equivalent circuit diagram of a light-emitting diode lighting device of FIG. 1 of FIG. 1. FIG. 4 is an equivalent circuit diagram of a light-emitting diode according to another embodiment of the present invention. FIG. 5 is an equivalent circuit diagram of a light-emitting diode according to still another embodiment of the present invention. FIG. 6 is a circuit diagram of a light-emitting diode illumination according to still another embodiment of the present invention. 201104911 FIG. 7 is an equivalent circuit diagram of a light-emitting diode lighting device according to a further embodiment of the present invention. [Main component symbol description] 10 bottom plate 20 light-emitting diode array wafer 25 n-type semiconductor layer 26 active layer 27 p-type semiconductor layer 28 first pad 29 second pad 30 rectifying unit 301 first rectifying element 302 second rectification Element 303 third rectifying element 304 fourth rectifying element 40 first conductive pattern 41 second conductive pattern 42 third conductive pattern 43 fourth conductive pattern 50 heat sink block Ia first current path 19 201104911 ib second current path L wire

20

Claims (1)

201104911 VII. Patent application scope: 1. A light-emitting diode lighting device comprising: a bottom plate; a light-emitting diode array chip having a growth substrate and being disposed on the growth substrate and electrically Connecting the plurality of light-emitting diodes each of the light-emitting diodes has a plurality of semiconductor layers stacked on the growth substrate; and a rectifying unit electrically connected to the light-emitting diodes, the rectifying unit will be an alternating current The power signal is converted into a DC power signal, so that the LEDs emit a light source after receiving the DC power signal, wherein the rectifying unit and the LED array are separately disposed on different areas of the bottom plate. 2. The LED lighting device of claim 1, wherein the semiconductor layer of each of the LEDs comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer and are sequentially stacked on The growth substrate is on. The illuminating diode illuminating device of claim 2, wherein each of the illuminating diodes further includes a first bonding pad formed on the n-type semiconductor layer, and A second pad is formed on the p-type semiconductor layer. 4. The illuminating diode lighting device of claim 1, wherein the rectifying unit comprises a Wheatstone Bridge composed of at least four rectifying elements, and each of the rectifying elements is They are respectively disposed on the bottom plate. 5. The illuminating diode lighting device of claim 4, wherein 21 201104911 each of the rectifying elements is fixed to the bottom plate by solder bonding or adhesive bonding. 6. The illuminating diode lighting device of claim 4, wherein the rectifying elements are Schottky Barrier Diodes (SBDs). 7. The light-emitting diode lighting device of claim 4, wherein the rectifying elements comprise a germanium semiconductor component or a III-V compound semiconductor component. 8. The illuminating diode lighting device of claim 4, wherein the Wheatstone bridge comprises a first current path and a second current path, and a first rectifying element, the illuminating diode The body array chip and a third rectifying component are located on the first current path and are sequentially connected in series, and a fourth rectifying component, the LED array chip and a second rectifying component are located in the second current path Connected in series and in series. 9. The illuminating diode lighting device of claim 8, wherein the rectifying unit further comprises a first conductive pattern and a second conductive pattern respectively disposed on the bottom plate, wherein the first conductive pattern is used Electrically connecting one end of the AC power signal to the first rectifying element and the second rectifying element, and the second conductive pattern is electrically connected to the other end of the AC power signal and the third rectifying element and the first Four rectifying elements. 10. The illuminating diode lighting device of claim 8, wherein the rectifying unit further comprises a third conductive pattern and a fourth conductive pattern respectively disposed on the bottom plate. Electrically connecting one of the electrodes of the LED array chip with the first rectifying element and the 22 201104911 fourth rectifying element, and the fourth conductive pattern is electrically connected to the other of the LED array chip An electrode and the second rectifying element and the third rectifying element. 11. The light-emitting diode lighting device of claim 1, wherein the material of the growth substrate comprises sapphire, bismuth carbide (si〇, bismuth (Si), zinc oxide (ZnO), arsenic. Gallium (GaAs) and spinel (MgAl204) 12. The LED lighting device of claim 1, wherein the AC power signal is 90-120 volts, 180-240 volts or 270- The illuminating diode illuminating device of claim 1, wherein the illuminating diode circuits formed in the illuminating diode array chip are connected in series or in parallel. The illuminating diode illuminating device of claim 1, wherein the illuminating diodes formed in the illuminating diode array chip comprise series and parallel connections. A device for illuminating a diode (4), wherein the substrate is made of a thermally conductive material. 16. The illuminating diode device of claim 1, wherein The chip is disposed on the heat dissipation block to provide a way for the light emitting diode to dissipate heat. The light-emitting diode lighting device of claim 17, wherein the bottom plate is a substrate, a circuit board or a ceramic substrate. 19. The illuminating diode illuminating device of claim 2, wherein the semiconductor layers of the luminescent diodes comprise gallium nitride, aluminum gallium nitride, indium gallium nitride and aluminum indium. At least one of gallium nitride. 20. The light-emitting diode lighting device of claim 19, wherein the semiconductor layer of the light-emitting diode is formed by epitaxy. 21. The LED lighting device of claim 1, wherein the LED array chip is attached to the substrate by solder bonding or adhesive bonding. The illuminating diode illuminating device of claim 1, wherein the illuminating diodes formed in the illuminating diode array wafer have the same wavelength or different wavelengths. The light-emitting diode array device of claim 1, wherein the light-emitting diode array chip further comprises at least one phosphor material on the light-emitting diodes. The light-emitting diode lighting device of claim 23, wherein the light emitted by the light-emitting diodes is mixed with the light emitted by the phosphor material into white light. The light-emitting diode illumination device of claim 24, wherein the light emitted by the light-emitting diodes includes blue light and ultraviolet light. 26. The illuminating diode lighting device of claim 25, wherein when the light emitted by the illuminating diodes is blue light, the phosphor material is yellow fluorescing powder or red fluorescing powder. Add green fluorescent powder.广24 201104911 27. If the patent application range is μ, + which is the light-emitting diode (4) Γ Γ 体 照明 照明 , , , Γ Γ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Fluorescent powder with blue scent ♦, powdered with blue enamel powder. _4 red fluoroscopy plus green fluorescent 28. A kind of illuminating diode lighting device, including · · light body array wafer, with - growing the substrate and setting it in a plurality of connected light-emitting diodes, each of the light-emitting diodes having a stack 4=a plurality of semiconductor layers on the grown substrate; and a rectifying unit electrically connected to the light-emitting diodes, the rectification unit The AC power signal is converted into a DC power signal, so that the LEDs emit a light source after receiving the DC power signal, wherein the rectifying unit is not disposed on the growing substrate. 29. The illuminating diode lighting device of claim 28, wherein the rectifying unit comprises a Wheatstone Bridge consisting of at least four rectifying elements, wherein each of the rectifying elements does not It is placed on the growth substrate. The illuminating diode illuminating device of claim 28, wherein each of the semiconductor layers of the illuminating diode comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer, and is sequentially stacked on The growth substrate is on. The illuminating diode illuminating device of claim 3, wherein each of the illuminating diodes further includes a first pad (iing pad) formed on the n-type semiconductor And a second solder pad is formed on the germanium-type semiconductor layer. 32. The light-emitting diode lighting device according to claim 29, 25 201104911 wherein the rectifying elements are Xiaoji A light-emitting diode lighting device according to claim 29, wherein the rectifying elements comprise a germanium semiconductor element or a m_v compound semiconductor element. The illuminating diode illuminating device of claim 29, wherein the Wheatstone bridge comprises a first current path and a second current path, wherein the first rectifying element and the illuminating diode array chip And a third rectifying component is located on the first current path and connected in series, and a fourth rectifying component, the LED array chip and a second rectifying component are located on the second current path and The light-emitting diode lighting device of claim 28, wherein the material of the growth substrate comprises sapphire, SiC, bismuth (Si), zinc oxide ( Zn0), gallium arsenide (GaAs), and spinel (MgAl204). The light-emitting diode lighting device of claim 28, wherein the AC power signal is 90-120 volts, 180-240 The illuminating diode illuminating device of claim 28, wherein the illuminating diode systems formed in the illuminating diode array chip are connected in series or in parallel. The illuminating diode illuminating device of claim 28, wherein the illuminating diodes formed in the illuminating diode array chip comprise series and parallel connections. 26 201104911 39. The illuminating diode device of claim 28, wherein the material of the semiconductor layer of the illuminating diode comprises at least one of gallium nitride, aluminum gallium nitride, indium gallium nitride and aluminum indium gallium nitride. 40. If you apply for a special The illuminating diode illuminating device of the ninth aspect, wherein the illuminating diode device of the illuminating diode is formed by the insect crystal method. The illuminating diode illuminating device of the illuminating diode array, wherein the illuminating diode array is formed in the illuminating diode array, wherein the illuminating diode array is The light emitting diode device is further provided on the light emitting diodes, wherein the light emitting diodes of the light emitting diodes and the light emitting diodes are The phosphor material is mixed with white light by the light emitted by the excitation. 44. The illuminating diode lighting device of claim 43, wherein the light emitted by the illuminating diodes comprises blue light and ultraviolet light. The light-emitting diode lighting device of claim 44, wherein when the light emitted by the light-emitting diodes is blue light, the fluorescent powder material is yellow fluorescent powder or red fluorescent powder plus Green fluorescent powder. The light-emitting diode lighting device of claim 44, wherein when the light emitted by the light-emitting diodes is ultraviolet light, the fluorescent powder material is yellow fluorescent powder plus blue fluorescent light. Powder or red fluorescent powder plus green fluorescent powder plus blue fluorescent powder. 47. A light-emitting diode array chip for receiving a DC power signal and transmitting a light source, the light-emitting diode array chip comprising: a growth substrate; and a plurality of light-emitting diodes disposed on the growth substrate And electrically connected, each of the light emitting diodes has a plurality of semiconductor layers stacked on the growth substrate. 48. The light-emitting diode array wafer according to claim 47, wherein the semiconductor layer of each of the four light-emitting diodes comprises an -n-type semiconductor layer, an active layer, and a --conductor conductor layer, and sequentially stacked S is on the axial length substrate. 49. The illuminating diode array wafer of claim 48, wherein each of the illuminating diodes further comprises a - bonding pad formed on the n-type semi-conducting county, and a second solder fillet formed on the P-type semiconductor layer. The light-emitting diode array wafer according to claim 47, wherein the material of the growth substrate comprises sapphire, sic, si, zinc oxide (Zn0), Gallium arsenide (GaAs) and spinel (MgAl204). The light-emitting diode array wafer of claim 47, wherein the light-emitting diode systems are connected in series or in parallel. The light-emitting diode array wafer of claim 47, wherein the light-emitting diodes comprise a plurality of groups connected in parallel, wherein each group has a plurality of the light-emitting diodes connected in series. The light-emitting diode array wafer of claim 47, wherein the light-emitting diodes comprise a plurality of groups connected in series, wherein each group has a plurality of the light-emitting diodes connected in parallel. The invention relates to the light-emitting diode array chip of claim 47, wherein the light-emitting diodes comprise a first group of a plurality of series connected, wherein each of the first groups has a plurality of parallel connected second Group, each of the second groups has a plurality of the aforementioned light emitting diodes connected in series. 55. The illuminating two according to claim 47 is extremely extreme; t the illuminating diodes include at least - the first group and the plural number; and J is connected to the second group, the first group and the The second group is contiguously connected, the first group has at least one of the light emitting diodes connected in series, and the second group has at least one of the light emitting diodes connected in series. The light-emitting diode array wafer of claim 47, wherein the light-emitting diode systems have the same wavelength or different wavelengths. The light-emitting diode array wafer of claim 47, further comprising at least one phosphor material disposed on the light-emitting diodes. The light-emitting diode array wafer of claim 57, wherein the light emitted by the light-emitting diodes is mixed with the light emitted by the phosphor material to form white light. The light-emitting diode array wafer of claim 58, wherein the light emitted by the light-emitting diodes comprises blue light and ultraviolet light. 60. The LED array of claim 59, wherein when the light emitted by the LEDs is blue light, the phosphor material is yellow phosphor or red phosphor. Green fluorescent powder. 61. The LED array according to claim 59, wherein when the light emitted by the LEDs is ultraviolet light, the phosphor material is yellow phosphor plus blue phosphor. Powder or red fluorescent powder plus green fluorescent 29 201104911 powder plus blue fluorescent powder.