201104891 四、指定代表圓： 圖為：第 件符號簡 (1 單說明 (一） 本案指定代表 (二） 本代表圖之元 1:透明基板 2:石夕化合物膜（樹脂棋） 3 :透明導電膜 4 :光電轉換層 5 :背面電極 10:附有薄膜的基板 2 0 :太陽電池 21 :凹凸形成面 31 :凹凸面 五、本案若有化學式時， 徵的化學式： 請揭示最能顯示發明特 六、發明說明： 【發明所屬之技術領域】 本發明特別是關於使用於太陽電池（so丨ar ce 11)的基 板（substrate)，且適於使太陽電池的光電轉換效率 (photoelectric conversion efficiency)提高之附有薄膜 的基板（substrate with thin film)及使用該基板之太陽 電池。 【先前技術】 201104891 一以往使用矽膜的太陽電池的研究被進行，達到實用化。 廷種太陽電池如下述專利文獻1所示，藉由在以透明的構件 幵y成的透明基板上疊層（laminate)氧化鋅等的透明導電膜 並形成附有薄膜的基板，更進一步依將光轉換成電的光電 轉換層（photoelectric conversion layer)與背面電極的 順序使其疊層而形成。具體上如目3所示，太陽電池1〇〇 是在由透明基板101與透明導電膜1〇2構成的附有薄膜的 基板110疊層有光電轉換層103與背面電極1〇4而構成， 可藉由太陽等的光（圖3中的箭頭）透過透明基板1(Π、透明 導電膜102且被光電轉換層1〇3吸收而取出電。 然後’為了以光電轉換層1 〇 3提高光的吸收，透明導 電膜102與光電轉換層1〇3的界面被形成凹凸形狀（凹凸構 造（textured structure) l〇2a)，據此可有效地進行光吸 收。亦即’藉由利用凹凸使由透明基板1 〇丨入射到透明導 電膜102的光散射，使入射到透明導電膜1〇2的光在透明導 電膜102與光電轉換層103的界面一樣地被反射，抑制光 不被光電轉換層103吸收而逸出（區域a)。藉由該凹凸構 造102a ’發揮所謂的光侷限效應（ligh1: confinement effect)’光被有效地吸收於光電轉換層1〇3。 [專利文獻1 ]日本國特開2006-5021號公報 【發明内容】 但是’在習知的太陽電池100中有即使光侷限效應被 發揮’光的吸收也不充分之問題。亦即，如圖3所示雖然 201104891 到達透明導電膜102的光如上述一碰撞凹凸形狀就藉由光 偏限效應被光電轉換層1 〇 3吸收，但因透明基板1 〇 1與透 明導電膜102折射率不同，故入射到透明基板1〇1的光如以 圖3中的R所示般’在透明基板ι〇1與透明導電膜ι〇2的界 面被反射。因該被反射的光R到達凹凸構造為止由透明基 板1〇1逸出，故不管凹凸構造的有無，無法使其吸收於光 電轉換層1 0 3。亦即，有如下的問題：上述的光侷限效應被 發揮者為對入射到透明導電膜1〇2的光發揮效果，在透明 基板101與透明導電膜1〇2的界面被反射的光已經損失 (loss)。 而且’凹凸構造的凹凸是藉由化學的钱刻（chemical etching)處理或 cVD(Chemical Vapor Deposition:化學氣 相沉積）法、賤鑛法（sputtering method)等形成。但是， 在該等方法中控制凹凸形狀成規定形狀或均勻地成形凹凸 的形狀很困難。而且也有如下的問題：假設於在凹凸形狀存 在形成不良部分（圖3中的區域C)的情形下，有碰撞該形 成不良部分的凹凸的光不被入射到光電轉換層1〇3而被反 射到透明基板1 〇 1側的情形，即使配設凹凸構造1 〇 2 a也很 難依照設計使到光電轉換層1 〇 3的光的吸收提高。 本發明乃是鑒於上述的問題點所進行的創作，其目的為 提供一種附有薄膜的基板及使用該附有薄膜的基板之太陽 電池，藉由極力抑制入射到透明基板的光在途中的路徑被 反射，充分發揮光侷限效應，使到光電轉換層的光的吸收 性提高。 201104891 基板 特徵 凹凸 反侧 且， 率的 原封 在光 折射 板與 且， 凸構 射， 之與 的凹 導電 層。 以奈 壓成 狀的 明導 為了解決上述課題，本發明的附有薄膜的基板是透明 與矽化合物膜與透明導電膜依此順序被疊層形成，其 為：前述矽化合物膜之透明導電膜側具有形成凹凸的 形成面’並且前述透明導電膜之與前述矽化合物膜相 的面具有沿著前述凹凸形成面的形狀的凹凸面，而 前述透明基板與石夕化合物膜是以具有約略同一的折射 材料形成。 依照上述附有薄膜的基板，藉由入射到透明基板的光 不動地入射到疊層於透明導電膜的光電轉換層，可使 電轉換層的光的吸收提高。 亦即’因透明基板與石夕化合物膜是以具有約略同—的 率的材料形成，故入射到透明基板的光不會在透明基 石夕化合物膜的邊界反射而被入射到矽化合物膜。而 因在矽化合物膜之透明導電膜側形成有凹凸形成面（凹 造）’故入射到矽化合物膜的光藉由該凹凸形成面散 有效地入射到透明導電膜。而且，因在該透明導電膜 矽化合物膜相反側的面形成有沿著凹凸形成面的形狀 凸面（凹凸形成面），故可藉由該凹凸面使入射到透明 膜的光有效地入射到形成於透明導電膜的光電轉換 此處石夕化合物膜可藉由模壓成形（press molding) 米級（nano-order)控制其表面形狀。因此，若藉由模 形等成形矽化合物膜的凹凸形成面，則可形成規定形 均勻的凹凸構造。然後，藉由疊層於矽化合物膜的透 電膜的凹凸面具有沿著該凹凸形成面的形狀，形成於 IS] 5 201104891 石夕化合物膜與透明導電膜的界面及透明導電臈與光電轉換 層的界面的凹凸構造與利用習知的製法形成的凹凸構造比 較，被控制成均勻的形狀。因此，因可極力抑制入射到透 明基板的光在途中被反射’並且可形成均勻形狀的凹凸構 造，故可充分發揮光侷限效應，使到光電轉換層的光的吸 收性提高。 而且.，前述石夕化合物膜是以包含妙氧烧（sil〇xane)的 石夕樹脂（silicone resin)形成的構成較佳。 依照該構成，包含矽氧烷的矽樹脂可藉由適切地進行 其分子設計，控制並製造折射率成因此，例如 透明基板使用玻璃的情形，因其折射率為15，故藉由以 包含調節折射率成1.5的碎氧炫的矽樹脂形成矽化合物 膜，使透明基板與矽化合物膜的折射率成約略同一。據此， 可極力抑制入射到透明基板的光在與石夕化合物膜的界面被 反射。 而且犯以如下之構成：前述矽化合物膜含有具有與該 •石夕化合物膜的折射率不同的折射率的微粒（partieuiate)£ 依照該構成，若入射到矽化合物膜的光碰撞微粒，則 由於石夕化合物膜與微粒的折射率的不同，該入射的光在石夕 化合物膜内散射。亦即’因入射到石夕化合物膜的光可得到 與凹凸構造同樣的光侷限效應’故可抑制入射到矽化合物 膜的光被反射到透明基板側’並可使到光電轉換層的光的 吸收性提高。 而且，為了解決上述課題’本發明的太陽電池，其特 6201104891 IV. Designated representative circle: Pictured: The first symbol is simple (1 single explanation (1) The designated representative of the case (2) The representative figure of the element 1: Transparent substrate 2: Shi Xi compound film (resin chess) 3 : Transparent conductive Film 4: photoelectric conversion layer 5: back electrode 10: substrate with film 2 0: solar cell 21: uneven surface 31: uneven surface 5. 6. Description of the Invention: [Technical Field] The present invention relates in particular to a substrate for use in a solar cell and is suitable for improving the photoelectric conversion efficiency of a solar cell. A substrate with a thin film and a solar cell using the same. [Prior Art] 201104891 A research on a solar cell using a ruthenium film has been carried out and has been put into practical use. The solar cell of the genus is as follows. As shown in Fig. 1, a transparent conductive film such as zinc oxide is laminated on a transparent substrate formed of a transparent member 并y, and a film-attached film is formed. The board is further formed by laminating the photoelectric conversion layer and the back electrode in the order of converting the light into electricity. Specifically, as shown in FIG. 3, the solar cell 1 is in the transparent substrate 101. The film-attached substrate 110 including the transparent conductive film 1〇2 is formed by laminating the photoelectric conversion layer 103 and the back surface electrode 1〇4, and can be transmitted through the transparent substrate 1 by light such as the sun (arrow in FIG. 3). The transparent conductive film 102 is absorbed by the photoelectric conversion layer 1〇3 to extract electricity. Then, in order to increase the absorption of light by the photoelectric conversion layer 1 〇3, the interface between the transparent conductive film 102 and the photoelectric conversion layer 1〇3 is formed into a bump. The shape (textured structure l〇2a) can be used to efficiently absorb light, that is, to scatter light incident on the transparent conductive film 102 from the transparent substrate 1 by using the unevenness, so that the light is incident on the transparent The light of the conductive film 1〇2 is reflected in the same manner as the interface between the transparent conductive film 102 and the photoelectric conversion layer 103, and the light is prevented from being absorbed by the photoelectric conversion layer 103 to escape (region a). The concave-convex structure 102a' functions as a so-called of The light confinement effect (ligh1: confinement effect) 'light is efficiently absorbed in the photoelectric conversion layer 1〇3. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-5021 [Abstract] However, the conventional solar cell 100 There is a problem that even if the optical confinement effect is exerted, 'the absorption of light is insufficient. That is, as shown in FIG. 3, although the light reaching the transparent conductive film 102 as 201104891 is as described above, the collision concavo-convex shape is photoelectrically induced by the optical bias effect. The conversion layer 1 〇 3 is absorbed, but since the refractive indices of the transparent substrate 1 〇 1 and the transparent conductive film 102 are different, the light incident on the transparent substrate 1 〇 1 is as shown by R in FIG. 3 'on the transparent substrate ι 〇 1 The interface with the transparent conductive film ι 2 is reflected. Since the reflected light R escapes from the transparent substrate 1〇1 until it reaches the uneven structure, it cannot be absorbed by the photoelectric conversion layer 103 regardless of the presence or absence of the uneven structure. That is, there is a problem that the above-mentioned optical confinement effect is exerted by the light incident on the transparent conductive film 1〇2, and the light reflected at the interface between the transparent substrate 101 and the transparent conductive film 1〇2 has been lost. (loss). Further, the unevenness of the concavo-convex structure is formed by a chemical chemical etching treatment, a cVD (Chemical Vapor Deposition) method, a sputtering method, or the like. However, it is difficult to control the uneven shape into a predetermined shape or uniformly shape the unevenness in these methods. Further, there is a problem that, in the case where there is a defective portion (region C in FIG. 3) in the uneven shape, light having irregularities that collide with the defective portion is not incident on the photoelectric conversion layer 1〇3 and is reflected. In the case of the side of the transparent substrate 1 〇1, even if the uneven structure 1 〇 2 a is disposed, it is difficult to improve the absorption of light to the photoelectric conversion layer 1 〇 3 in accordance with the design. The present invention has been made in view of the above problems, and an object thereof is to provide a substrate with a film and a solar cell using the substrate with the film, and to suppress the path of light incident on the transparent substrate as much as possible It is reflected and fully exerts the optical confinement effect to improve the absorbability of light to the photoelectric conversion layer. 201104891 Substrate features Concave-convex reverse side, and the rate is the same as the concave conductive layer between the light-refractive plate and the convex structure. In order to solve the above problems, the film-attached substrate of the present invention is formed by laminating a transparent ruthenium compound film and a transparent conductive film in this order, which is a transparent conductive film of the ruthenium compound film. The side having the formation surface of the uneven surface and the surface of the transparent conductive film facing the ruthenium compound film has a concave-convex surface along the shape of the uneven surface, and the transparent substrate and the shi compound film are approximately the same A refractive material is formed. According to the substrate having the film, the light incident on the transparent substrate is incident on the photoelectric conversion layer laminated on the transparent conductive film, whereby the light absorption of the electric conversion layer can be improved. That is, since the transparent substrate and the Si-Yi compound film are formed of a material having a similar ratio, the light incident on the transparent substrate is not reflected at the boundary of the transparent base compound film and is incident on the ruthenium compound film. On the other hand, since the unevenness forming surface (concave) is formed on the side of the transparent conductive film of the ruthenium compound film, the light incident on the ruthenium compound film is efficiently incident on the transparent conductive film by the uneven surface formation. Further, since the convex surface (concave-convex forming surface) along the uneven surface is formed on the surface on the opposite side of the transparent conductive film 矽 compound film, the light incident on the transparent film can be efficiently incident on the surface by the uneven surface. In the photoelectric conversion of the transparent conductive film, the stone compound film can be controlled by the press molding nano-order. Therefore, when the uneven surface forming surface of the ruthenium compound film is formed by molding or the like, a concave-convex structure having a predetermined shape can be formed. Then, the uneven surface of the transparent film laminated on the ruthenium compound film has a shape along the uneven surface, and is formed at the interface of the IS compound film and the transparent conductive film, and the transparent conductive iridium and photoelectric conversion. The uneven structure of the interface of the layer is controlled to have a uniform shape as compared with the uneven structure formed by a conventional method. Therefore, since the light incident on the transparent substrate can be suppressed as much as possible, and the uneven structure of the uniform shape can be formed, the optical confinement effect can be sufficiently exerted, and the light absorbability to the photoelectric conversion layer can be improved. Further, the above-mentioned Shishi compound film is preferably formed of a silicone resin containing siloxane. According to this configuration, the ruthenium resin containing a decane can be controlled and manufactured by appropriately performing molecular design thereof. Therefore, for example, in the case where a transparent substrate is made of glass, since the refractive index is 15, it is adjusted by inclusion. The ruthenium resin having a refractive index of 1.5 forms a ruthenium compound film, and the refractive index of the transparent substrate and the ruthenium compound film are approximately the same. According to this, it is possible to suppress light incident on the transparent substrate to be reflected at the interface with the compound film. Further, the ruthenium compound film contains a particle having a refractive index different from that of the ruthenium compound film. According to this configuration, when light incident on the ruthenium compound film collides with the particles, The difference between the refractive index of the Shihua compound film and the particles is that the incident light is scattered in the film of the compound. In other words, the light having the same light confinement effect as that of the uneven structure can be obtained by the light incident on the compound film of the stone compound, so that the light incident on the ruthenium compound film can be suppressed from being reflected to the side of the transparent substrate and the light to the photoelectric conversion layer can be made. Increased absorption. Further, in order to solve the above problems, the solar cell of the present invention is characterized in particular.
Γ C 201104891 徵為：使光電轉換層與背面電極 %此順痒最a ,, 附有薄膜的基板之透明導電膜側。 a胃形成於上述 依照上述太陽電池，藉由 光在途中的路徑被反射，可形 充分發揮光侷限效應，可使到 南0 力抑制入射到透明基板的 岣勻形狀的凹凸構造，可 電轉換層的光的吸收性提 【發明的功效】 依照本發明的附有薄膜的基板；3估由— 土瑕及使用該附有薄膜的基 板之太陽電池’藉由極力抑制入射到透明基板的光在途中 的路徑被反射，並且充分發揮光侷限效應，可使到光電轉 換層的光的吸收性提高。 【實施方式】 圖1是本發明的一實施形態中的太陽電池20之構成部 分别面圖。 如圖1所示’太陽電池20具有透明基板1與矽化合物 膜2與透明導電膜3與光電轉換層4與背面電極5，藉由 該等透明基板1與矽化合物膜2與透明導電膜3與光電轉 換層4與背面電極5依此順序被疊層而形成。而且，藉由 太陽光等的光（圖1中的箭頭）一由透明基板1側入射，就 透過矽化合物膜2與透明導電膜3且入射到光電轉換層4, 使入射的光被轉換成電。 透明基板1是保護透明導電膜3和光電轉換層4。而 201104891 且，透明基板 具有透明性， 性。在本實施 大致平坦的的 則也能使用塑 繞（wind)的生 石夕化合物 明導電膜3的 成凹凸構造的 射到矽化合物 被反射，使其 本實施形 含矽氧烷的矽 俾其折射率與 率約略同·一。 矽化合物膜2 板1的折射率 率被形成約略 基板1與樹脂 樹脂膜2。因 的情形比較， 電轉換層4中 此處，若 玻璃被使用作 1為了供給太陽光等的光至光電轉換層4而 並且具有耐光電轉換層4中的發熱的耐熱 形態中使用一般容易得到的玻璃，具有表面 平板形狀。此外，若具有透明性及耐熱性， 膠祺（plastic film)。在此情形下因利用捲 產為可能，故可加快生產速度。 膜2 (以下也僅稱為樹脂膜2)是用以形成透 凹凸構造，在與透明導電膜3接觸的側具有形 凹凸形成面21»藉由該凹凸形成面21抑制入 膜2的光在樹脂膜2與透明導電膜3的界面 有效地入射到透明導電膜3。 態的矽化合物膜2為矽系的樹脂膜，藉由包 樹脂形成。該包含矽氧烷的矽樹脂被調整， 透明基板1 (在本實施形態中為玻璃）的折射 具體上，因玻璃的折射率為約1.5，故形成 的樹脂也被調整成約1. 5。亦即，因透明基 與矽化合物膜2 (以下也稱為樹脂膜2)的折射 同一，故入射到透明基板1的光不會在透明 膜2的界面被反射，而是原封不動地入射到 此，和透明基板1與樹脂膜2的折射率不同 因供給至光電轉換層4的光變多，故可使光 的光的吸收性提高。 與圖3的習知的太陽電池10 〇比較，則以往 為透明基板101，在該玻璃基板上疊層有氧化 201104891 鋅作為透明導電膜1〇2。此情形因玻璃基板的折射率為 1·5氧化鋅的折射率為1.9，故反射率為約1.4%。因此， 入射到透明基板1的光的i · 4%就會被反射。亦#，在使透 明基板1與樹脂模2的折射率大致相同的本實施形態的構 j中，與習知的構成比較，可單純地使丨· 4%的光的吸收性 提问此點右由太陽電池2〇的轉換效率（conversion efficiency)—般被考慮為6~8%，14%的提高為大的提高。 此外，因透明基板1與樹脂膜2其材料不同，故很難 使該等透明基板1與樹脂膜2的折射率完全一致，惟約略 同一是指對透明基板丨的折射率，樹脂膜2的折射率位於 0.1 +0.1的範圍，更佳是指位於0.05〜+ 0.05的範圍。若 為該折射率的範圍，則可考慮為大概沒有在界面被反射的 損失。 而且，因包含矽氧烷的矽樹脂與不包含矽氧烷的矽樹 脂比較，分子構造穩定，故加工後的形狀穩定性佳。因此， 即使對光侷限效應有效的凹凸構造為微細且複雜者，也能 穩定進行加工形成。 該樹脂膜2中的凹凸形成面21的形成可藉由壓印 (imprint)進行。亦即，在將未硬化的包含矽氧烷的矽樹脂 塗佈於形成有凹凸構造的凹凸形狀的不同體的壓印基材 (printed substrate)後，藉由加熱緊壓或紫外線照射使其 硬化。然後，藉由使壓印基材剝離，藉由在該石夕樹脂轉印 有凹凸構造的凹凸形狀，形成有凹凸形成面21。據此，例 如若在壓印基材形成奈米級（nan〇_level)的凹凸圖案 201104891 (pattern) 的化學的蝕 成所要的凹 應，可使光 而且， 折射率的微 2 2的樹脂思 在本實施形 有於樹脂膜 收於透明導 亦即， 膜2的折射 反射。然後 入射到透明 導電膜3反 到透明導電 於樹脂膜2 光的吸收性 該微粒 透明導電膜 存在於凹凸 面被反射的 的機率變高 如此，禮 則該凹凸圖案被轉印到矽樹脂。據此，與習知 刻處理或CVD法、濺鍍比較，可容易均勻地形 凸構造。據此，可容易依照設計得到光雋限效 電轉換層4中的光吸收性提高。 樹脂膜2為含有與該樹脂膜2的折射率不同的 粒22者也可以。此處，圖2是具有含有微粒 、2的附有薄膜的基板1 〇之構成部分剖面圖。 態中使將高純度的氧化鋅微粒化成奈米級者含 2 °據此’可使入射到樹脂膜2的光有效地吸 電膜3進而光電轉換層4。 因入射到樹脂膜2的光一碰撞微粒22，對樹脂 率丨·5’微粒22的折射率為1.9，故入射的光 ’藉由入射的光藉由微粒22反射而更進一步被 導電膜3 ( 部分），而且即使假設是藉由透明 射的情形’也透過藉由微粒22反射，再度入射 膜3的機率變高（7部分）。因此，可藉由含有 的微粒2 2的光侷限效應，使光電轉換層4中的 提高。 22 一樣地存在於樹脂膜2而構成也可以，惟在 3附近更多數存在較佳。亦即，藉由微粒2 2 干> 成面21附近，使得於在與透明導電膜3的界 光藉由微粒22再度反射時被透明導電膜3吸收 結果可使光電轉換層4中的光的吸收性提高。 微粒2 2更多數存在於透明導電膜3側的樹脂 201104891 膜2，例如在使矽樹脂塗佈於上述的壓 分成複數次塗佈矽樹脂而 ▲材_ ,可藉由 ^ , 成亦即’首先將包含料物99 的矽樹脂塗佈於形成有上…政粒22 格,M 1收^ 凸構造的壓印基材。缺 後，藉由將不含微粒22的矽樹脂塗佈於 7 明導電膜3侧微粒22更多數存| 、、 ° /成在透 歎存在的樹脂骐此外，不评 於兩次的塗佈，藉由在進行 卜不限 罪近壓印基材側，濃度越高“包3越 Μ fn Ά sj. 幻微粒22的矽樹脂，隨著接近 壓印基材側，微粒22逐漸增& ^ i 者接近 抽⑹ή 而形成者也可以。據此，可 抑制入射到樹脂膜2的光立g 象此了 山aL 即破撞微粒22且被反射。 此外，該微粒22也可以為每儿 m ^ ^ u 辱氧化錫的微粒，若為透明且 具有與樹脂膜2的折射率不同&边月且 卜的折射率者也可以。 而且，透明導電膜3是 Φ ^ ^ 馬了取出藉由光電轉換層4發 電的電的電極膜。該透明導電 + 有ig明^ ^ 犋3疋錯由氧化鋅形成，具 戈逯明性。而且，在透明導雷 膘3之與樹脂膜2相反側的 向形成有凹凸面31。 該凹凸面31具有凹凸構拌 A 敖上 再入射到透明導電膜3的光 错由光侷限效應被有效地入射 ^ 对到光電轉換層4。該凹凸面 d 1具有沿著凹凸形成面21的彤仙 + β ^ 形狀。亦即，透明導電膜3 错由以濺鍍法等成膜於樹脂膜9 、 , 碼2的凹凸形成面21，在凹凸 形成面2 1 —樣地形成有微小厚 年度的氧化鋅膜。據此，形成 有沿著凹凸形成面21的一定厘电& 4 ^ 心厚度的透明導電膜3。因此， 該透明導電膜3在樹脂膜2側沾；也，而& ^ „ 列的面與光電轉換層4側的面 的兩方形成有凹凸構造。 如上述’藉由使樹脂層2 Λ策an w π <及透明導電膜3依此順序疊 201104891 層於透明基板1，形成有附有薄膜的基板1 〇。然後，藉由 使光電轉換層4及背面電極5依此順序疊層於該附有薄膜 的基板1 0的透明導電膜3，可得到太陽電池2〇。 光電轉換層4具有ΡΝ接合（PN juncti〇n)或ρΐΝ接合 (PIN junction)，將入射的光轉換成電。該光電轉換層^ 可使用矽材料等，可藉由CVD法等成膜於透明導電膜3而 形成。 背面電極5是為了取出藉由光電轉換層4發電的電的 電極膜，並且使不被光電轉換層4吸收而透過的光返回到 光電轉換層4。具體上，使用鋁或銀等的具有反射性的金 屬膜，可藉由金屬反射使透過光電轉換層4的光返回到光 電轉換層4。此外，背面電極5也可以使用使氧化鋅等的 透明導電膜疊層於金屬層者。 、 若太陽光被照射於上述的太陽電池2 〇，則光會入射至 透明基板1’不會在透明基板1與樹脂膜2的界面被反射 而是原封不動地入射到樹脂膜2 (圖1、圖2中的α部分） 然後’入射到樹脂膜2的光藉由碰撞形成於樹脂膜2與这 明導電膜3的凹凸構造的凹凸而發散，藉由光偶限效應/ 射到透明導電膜3。亦即，入射到透明基板i的 ~ 元無因邊 層異種構件間造成的反射的損失，直接到達形 八}脂堪 2與透明導電膜3的凹凸構造的凹凸，藉由光偈限效 射到透明導電膜3。然後，入射到透明導電膜q " 、^的光藉i 碰撞形成於透明導電膜3與光電轉換層4的界面& 面的凹凸才| 造的凹凸，受到光侷限效應入射到光電轉換層4 曰Η且破吸收 201104891 以上，依照本實施形態中的附有薄膜 該附有薄膜的基板ίο之太陽電池2〇’ β 到逸明基板1的光在途中被反射，並且5 四办構造，故可充分發揮光侷限效應，令 $ $的吸收性提高。 式簡單說明】 圖1是本發明的一實施形態中的太Ιί 杳,J面圖。 圖2是使微粒含有於上述太陽電池合 有薄膜的基板之構成部分剖面圖。 圖3是顯示被使用於習知的太陽電池 【主要元件符號說明】 1、1 0 1 :透明基板 2 :石夕化合物膜（樹脂膜） 3、 102:透明導電膜 4、 103 :光電轉換層 5 :背面電極 10、110:附有薄膜的基板 2〇、100:太陽電池 21 :凹凸形成面 2 2 :微粒 31:凹凸面 的基板10及使用 丨可極力抑制入射 t形成均句形狀@ L到光電轉換層4 電池之構成部分 矽化合物膜的附 的太陽電池之圖。 201104891 102a:凹凸構造Γ C 201104891 Signs: Make the photoelectric conversion layer and the back electrode % This is the most a, and the transparent conductive film side of the substrate with the film attached. The stomach is formed in the above-described solar cell, and the light is reflected by the path in the middle of the light, and the optical confinement effect can be fully exerted, so that the southerly force can suppress the uneven structure of the uniform shape incident on the transparent substrate, and can be electrically converted. Absorbance of light of a layer [Effect of the invention] A film-attached substrate according to the present invention; 3 estimated by the solar cell and the solar cell using the film-attached substrate by suppressing light incident on the transparent substrate The path on the way is reflected, and the light confinement effect is fully exerted, and the absorbability of light to the photoelectric conversion layer can be improved. [Embodiment] FIG. 1 is a plan view showing a configuration of a solar cell 20 according to an embodiment of the present invention. As shown in FIG. 1 , the solar cell 20 has a transparent substrate 1 and a ruthenium compound film 2 and a transparent conductive film 3, and a photoelectric conversion layer 4 and a back surface electrode 5, and the transparent substrate 1 and the ruthenium compound film 2 and the transparent conductive film 3 are provided. The photoelectric conversion layer 4 and the back surface electrode 5 are laminated in this order. Further, when light such as sunlight (arrow in FIG. 1) is incident on the side of the transparent substrate 1, the ruthenium compound film 2 and the transparent conductive film 3 are transmitted and incident on the photoelectric conversion layer 4, so that the incident light is converted into Electricity. The transparent substrate 1 is a protective transparent conductive film 3 and a photoelectric conversion layer 4. And 201104891, the transparent substrate has transparency and properties. In the case where the present embodiment is substantially flat, it is also possible to use a sinusoidal compound having a concave-convex structure of a corundum-like compound conductive film 3 to be reflected, and to refract the yttrium-containing yttrium of the present embodiment. The rate and rate are about the same. The refractive index of the ruthenium compound film 2 plate 1 is formed approximately in the substrate 1 and the resin resin film 2. In the electric conversion layer 4, it is generally easy to obtain the glass in the heat-resistant form in which the glass is used for supplying light such as sunlight to the photoelectric conversion layer 4 and having heat resistance in the photoelectric conversion layer 4. The glass has a flat plate shape. Further, if it has transparency and heat resistance, it is a plastic film. In this case, the use of the coil is possible, so the production speed can be accelerated. The film 2 (hereinafter also referred to simply as the resin film 2) is for forming a transflective structure, and has a concave-convex forming surface 21 on the side in contact with the transparent conductive film 3, and the light entering the film 2 is suppressed by the uneven forming surface 21 The interface between the resin film 2 and the transparent conductive film 3 is efficiently incident on the transparent conductive film 3. The ruthenium compound film 2 is a ruthenium-based resin film formed of a resin. 5。 The resin is also adjusted to a thickness of about 1.5, the refractive index of the glass is also about 1.5. In other words, since the transparent group and the bismuth compound film 2 (hereinafter also referred to as the resin film 2) have the same refraction, the light incident on the transparent substrate 1 is not reflected at the interface of the transparent film 2, but is incident as it is. Since the refractive index of the transparent substrate 1 and the resin film 2 is different depending on the refractive index of the transparent substrate 1 and the resin film 2, the light absorbability of light can be improved. In comparison with the conventional solar cell 10 of Fig. 3, the transparent substrate 101 is conventionally laminated, and oxidized 201104891 zinc is laminated as the transparent conductive film 1〇2 on the glass substrate. In this case, since the refractive index of the glass substrate was 1.5, the refractive index of zinc oxide was 1.9, so the reflectance was about 1.4%. Therefore, i · 4% of the light incident on the transparent substrate 1 is reflected. In the configuration j of the present embodiment in which the refractive index of the transparent substrate 1 and the resin mold 2 are substantially the same, compared with the conventional configuration, it is possible to simply raise the absorbance of light of 丨·4%. The conversion efficiency of the solar cell is generally considered to be 6 to 8%, and the improvement of 14% is a large increase. In addition, since the transparent substrate 1 and the resin film 2 are different in material, it is difficult to completely match the refractive indices of the transparent substrate 1 and the resin film 2, but approximately the same means the refractive index of the transparent substrate ,, and the resin film 2 The refractive index is in the range of 0.1 + 0.1, more preferably in the range of 0.05 to + 0.05. If it is the range of the refractive index, it is considered that there is probably no loss of reflection at the interface. Further, since the ruthenium resin containing a siloxane is stable in molecular structure as compared with a ruthenium resin containing no siloxane, the shape stability after processing is good. Therefore, even if the concavo-convex structure effective for the optical confinement effect is fine and complicated, the formation can be stably performed. The formation of the unevenness forming surface 21 in the resin film 2 can be performed by imprinting. That is, after the unhardened decane-containing yttrium resin is applied to a printed substrate of a different body in which the uneven shape of the uneven structure is formed, it is hardened by heat pressing or ultraviolet irradiation. . Then, by peeling off the imprint substrate, the concavo-convex forming surface 21 is formed by transferring the concavo-convex shape of the concavo-convex structure to the resin. According to this, for example, if the imprint of the chemical etching of the nano-scale (nan〇_level) concave-convex pattern 201104891 is formed on the imprinted substrate, the light and the resin having a refractive index of 2 2 can be obtained. In this embodiment, the resin film is exposed to a transparent guide, that is, the refractive reflection of the film 2. Then, the light is incident on the transparent conductive film 3, and the light is transparently transmitted to the resin film 2. The transparency of the fine transparent conductive film is reflected on the uneven surface. Thus, the uneven pattern is transferred to the resin. According to this, it is possible to easily and uniformly form the convex structure as compared with the conventional etching process, the CVD method, and the sputtering. According to this, it is possible to easily obtain an improvement in light absorption in the aperture-limited power conversion layer 4 in accordance with the design. The resin film 2 may be a pellet 22 having a refractive index different from that of the resin film 2. Here, Fig. 2 is a cross-sectional view showing a configuration of a substrate 1 having a film containing fine particles and 2, respectively. In the state, the high-purity zinc oxide is atomized to a nanometer level, so that the light incident on the resin film 2 can efficiently absorb the film 3 and the photoelectric conversion layer 4. Since the light incident on the resin film 2 collides with the fine particles 22, the refractive index of the resin ratio 丨·5' fine particles 22 is 1.9, so that the incident light 'is further reflected by the fine particles 22 by the incident light to be further conductive film 3 ( Partly), and even if it is assumed to be reflected by the particles 22 by the case of transparent radiation, the probability of re-entry of the film 3 becomes high (7 parts). Therefore, the improvement in the photoelectric conversion layer 4 can be achieved by the optical confinement effect of the contained particles 2 2 . 22 may be formed in the resin film 2 in the same manner, but it is preferable to have a larger number in the vicinity of 3. That is, by the particles 2 2 dry > in the vicinity of the face 21, the light in the photoelectric conversion layer 4 can be made to be absorbed by the transparent conductive film 3 when the boundary light with the transparent conductive film 3 is again reflected by the particles 22. The absorption is improved. More of the fine particles 2 2 are present in the resin 201104891 film 2 on the side of the transparent conductive film 3, for example, by applying a ruthenium resin to the above-mentioned pressure-packed ruthenium resin and ▲ material _, which can be formed by 'First, the ruthenium resin containing the material 99 was applied to an embossed substrate formed with a top layer of 22 grains and a M 1 structure. After the defect, the ruthenium resin containing no fine particles 22 is coated on the side of the conductive film 3 on the side of the conductive film 3, and the number of the fine particles 22 is more than 5%. Cloth, by the side of the imprinted substrate, the higher the concentration, the higher the concentration of the package, the more the 矽 Μ Μ Μ s s 22 22 , , , , , , , , , , , , , , , , , , , , 随着 随着 随着 随着 随着 随着 随着 随着^ i is close to the pumping (6) ή and the formation is also possible. Accordingly, it is possible to suppress the light incident on the resin film 2 such that the mountain aL is the colliding particle 22 and is reflected. Further, the particle 22 may be each m ^ ^ u The particles of the tin oxide are transparent, and have a refractive index different from that of the resin film 2, and the refractive index of the side of the moon is also acceptable. Moreover, the transparent conductive film 3 is Φ ^ ^ An electric electrode film generated by the photoelectric conversion layer 4. The transparent conductive + ig is formed by zinc oxide, and has a clearness. Moreover, the transparent conductive thunder 3 and the resin film 2 An uneven surface 31 is formed on the opposite side. The uneven surface 31 has a concave-convex structure and is incident on the transparent conductive film 3 The optical confinement effect is effectively incident on the photoelectric conversion layer 4. The uneven surface d1 has a shape of a +仙+β^ along the unevenness forming surface 21. That is, the transparent conductive film 3 is formed by sputtering or the like. The film is formed on the unevenness forming surface 21 of the resin film 9 and the code 2, and a zinc oxide film having a small thickness is formed on the uneven surface 21. Thus, a certain centimeter of electricity along the uneven surface 21 is formed. 4 ^ The thickness of the transparent conductive film 3. Therefore, the transparent conductive film 3 is applied to the resin film 2 side; and the surface of the & ^ „ column and the surface of the photoelectric conversion layer 4 side are formed with a concave-convex structure. . As described above, the substrate 1 with the film attached is formed by laminating the resin layer 2 and the transparent conductive film 3 in this order on the transparent substrate 1. Then, the solar cell 2 is obtained by laminating the photoelectric conversion layer 4 and the back surface electrode 5 in this order on the transparent conductive film 3 of the film-attached substrate 10. The photoelectric conversion layer 4 has a PN junction or a PIN junction to convert incident light into electricity. The photoelectric conversion layer can be formed by forming a film on the transparent conductive film 3 by a CVD method or the like using a germanium material or the like. The back electrode 5 is for taking out an electric electrode film which is generated by the photoelectric conversion layer 4, and returns light which is not absorbed by the photoelectric conversion layer 4 to the photoelectric conversion layer 4. Specifically, by using a reflective metal film such as aluminum or silver, the light transmitted through the photoelectric conversion layer 4 can be returned to the photoelectric conversion layer 4 by metal reflection. Further, as the back surface electrode 5, a transparent conductive film such as zinc oxide may be laminated on the metal layer. When the sunlight is applied to the solar cell 2, the light is incident on the transparent substrate 1' and is not reflected at the interface between the transparent substrate 1 and the resin film 2, but is incident on the resin film 2 as it is (Fig. 1) The α portion in FIG. 2) Then, the light incident on the resin film 2 is diverged by the unevenness of the uneven structure of the resin film 2 and the bright conductive film 3 by the collision, by the light confinement effect/reflection to the transparent conductive Membrane 3. That is, the loss of reflection between the different elements of the transparent substrate i incident on the transparent substrate i directly reaches the unevenness of the concave and convex structure of the shape and the transparent conductive film 3, and is limited by the aperture To the transparent conductive film 3. Then, the light incident on the transparent conductive film q " , ^ is formed by the unevenness of the interface formed on the interface of the transparent conductive film 3 and the photoelectric conversion layer 4, and is incident on the photoelectric conversion layer by the optical confinement effect. 4 曰Η 破 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 104 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 Therefore, the optical limitation effect can be fully utilized to increase the absorption of $$. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a singular view of an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a part of a substrate in which fine particles are contained in a film of the above solar cell. 3 is a view showing a solar cell used in the prior art. [Main component symbol description] 1. 1 0 1 : Transparent substrate 2: A compound film (resin film) 3, 102: Transparent conductive film 4, 103: Photoelectric conversion layer 5: Back electrode 10, 110: Substrate with film 2, 100: Solar cell 21: Concave-convex forming surface 2 2: Particle 31: Concave-convex surface of the substrate 10 and the use of 丨 to suppress incident t to form a uniform sentence shape @ L A diagram of the attached solar cell to the constituent portion of the photoelectric conversion layer 4 battery. 201104891 102a: Concave structure