TW201101924A - Image display device and organic electroluminescent element - Google Patents

Image display device and organic electroluminescent element Download PDF

Info

Publication number
TW201101924A
TW201101924A TW099104784A TW99104784A TW201101924A TW 201101924 A TW201101924 A TW 201101924A TW 099104784 A TW099104784 A TW 099104784A TW 99104784 A TW99104784 A TW 99104784A TW 201101924 A TW201101924 A TW 201101924A
Authority
TW
Taiwan
Prior art keywords
film
group
organic
carbon atoms
substrate
Prior art date
Application number
TW099104784A
Other languages
Chinese (zh)
Other versions
TWI501696B (en
Inventor
Takayuki Uchida
Makoto Wakana
Hideo Suzuki
Takahiro Noda
Original Assignee
Tokyo Polytechnic University
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Polytechnic University, Nissan Chemical Ind Ltd filed Critical Tokyo Polytechnic University
Publication of TW201101924A publication Critical patent/TW201101924A/en
Application granted granted Critical
Publication of TWI501696B publication Critical patent/TWI501696B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075Partially aromatic polyimides
    • C08G73/1078Partially aromatic polyimides wholly aromatic in the diamino moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

Disclosed are an image display device and an organic EL element, each of which involves at least a polyimide film substrate and an ITO electrode formed on the substrate, wherein the ITO electrode is a polycrystalline ITO electrode and the polyimide film contains a repeating unit represented by formula [1] in an amount of at least 10 mol%. Each of the image display device and the organic EL element involves a flexible polyimide film and has excellent element properties including light emission luminance. (In the formula, R1 and R2 independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 5 carbon atoms; R3, R4 and R5 independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, an alkoxyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 7 carbon atoms, a nitril group, or a carboxyl group; and n represents a integer.)

Description

201101924 六、發明說明: 【發明所屬之技術領域】 本發明係關於影像顯示裝置及有機電致發光元件。 【先前技術】 過去各種電子裝置中之電氣絕緣膜、有機電致發光( 以下簡稱爲有機EL)顯示器用基板、液晶顯示器用基板、 0 電子紙用基板及太陽電池用基板皆使用玻璃。 然而,最近隨著這些裝置之大畫面化,使用玻璃基板 時有著重量增大化之問題、或隨著手機、電子手帳、筆記 型電腦等個人數位助理等移動型情報通信機器用顯示裝置 之薄膜化,玻璃基板之破損問題等變的嚴重。 因此,其爲輕量且柔軟之同時,具有耐衝撃性,亦容 易成型加工之塑質基板的採用正被需求。 透明下柔軟且強靭之塑質基板可實現可彎曲或捲曲下 〇 收納的撓性顯示板。 在有機EL顯示器用基板領域中,已知使用聚萘二甲酸 乙二酯(PEN )之例子(專利文獻丨)。PEN的耐熱溫度爲 1 5〇°C ’雖必須低溫成膜,但尙未確立該實用性之製造法 〇 s此’聚醯亞胺樹脂因具有較高機械性強度、耐熱性 '絕緣性'耐溶劑性,故於液晶顯示元件或半導體中廣泛 _作爲保護材料、絕緣材料、彩色過濾器等電子材料用薄膜 使用。 -5- 201101924 然而’過去的全芳香族聚醯亞胺樹脂必須經著色成呈 現濃琥珀色,故對於要求高透明性之電子裝置分野的厚膜 而言產生問題。 作爲實現透明性之其中一方法,已知藉由如3,4-二殘 基-1,2,3,4 -四氫-1-萘琥珀酸二酐(以下簡稱爲TDA)之脂 環式四羧酸二酐與芳香族二胺之聚縮合反應得到聚醯亞胺 前驅物,將該前驅物經亞胺化製造聚醯亞胺時,可比較少 著色,得到高透明性聚醯亞胺(專利文獻2及3 )。 然而,這些聚醯亞胺係適用於液晶配向膜厚度爲1 μιη 以下之特定領域的膜,故製膜爲1〇〇μηι前後之厚膜成爲困 難之問題。 又,藉由式[5]所示TDΑ化合物、與式[6]所示取代雙 (胺基苯氧)苯化合物(以下簡稱爲BAPB化合物)之聚 縮合所得的TDA-BAPB化合物聚醯亞胺,雖無具體記載, 該物性爲未知,且對於該用途面上,可發揮如何特性亦爲 未知。 [化1]201101924 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to an image display device and an organic electroluminescence device. [Prior Art] In the past, electrical insulating films, organic electroluminescence (hereinafter referred to as organic EL) display substrates, liquid crystal display substrates, 0 electronic paper substrates, and solar cell substrates used in various electronic devices have used glass. However, recently, with the large screen of these devices, there has been a problem of an increase in weight when using a glass substrate, or a film of a display device for a mobile information communication device such as a personal digital assistant such as a mobile phone, an electronic PDA, or a notebook computer. The problem of damage to the glass substrate is severe. Therefore, the use of a plastic substrate which is lightweight and soft, and which is resistant to squeezing, and which is easy to mold, is being demanded. The flexible and tough plastic substrate under transparent can realize flexible display panels that can be bent or curled down. In the field of substrates for organic EL displays, an example of using polyethylene naphthalate (PEN) is known (Patent Document No.). The heat-resistant temperature of PEN is 15 °C. Although it is necessary to form a film at a low temperature, the manufacturing method of this practicality has not been established. The 'polyimine resin' has high mechanical strength and heat resistance 'insulation'. Since it is solvent-resistant, it is widely used as a film for electronic materials, such as a protective material, an insulating material, and a color filter, in a liquid crystal display element or a semiconductor. -5- 201101924 However, the past all-aromatic polyimine resins have to be colored to a solid amber color, which poses a problem for thick films of electronic devices that require high transparency. As one of the methods for achieving transparency, an alicyclic ring such as 3,4-di residue-1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride (hereinafter abbreviated as TDA) is known. Polycondensation reaction of tetracarboxylic dianhydride with aromatic diamine to obtain a polyimide precursor, and when the precursor is imidized to produce a polyimine, the coloring can be relatively small, and a highly transparent polyimide can be obtained. (Patent Documents 2 and 3). However, these polyimines are suitable for use in a specific field of a liquid crystal alignment film having a thickness of 1 μm or less, so that it is difficult to form a thick film of 1 〇〇 μηι. Further, a TDA-BAPB compound obtained by polycondensation of a TDΑ compound represented by the formula [5] and a substituted bis(aminophenoxy)benzene compound (hereinafter abbreviated as BAPB compound) represented by the formula [6] Although there is no specific description, the physical properties are unknown, and it is unknown how the properties can be exerted on the application surface. [Chemical 1]

(式中,R1及R2各獨立表示氫原子、鹵素原子、或碳數1 〜5的烷基,R3' R4及R5各獨立表示氫原子、鹵素原子、 碳數1〜10的烷基、碳數2〜5的鏈烯基、碳數1〜5的烷氧 201101924 基、碳數3〜7的環烷基、腈基、或羧基。) 且,雖已有報告具備聚醯亞胺基板及多結晶ITO電極 之有機電致發光元件,但該元件特性爲,在電壓14V時爲 電流密度100A/m2、及在電流密度100A/m2時發光效率 1 1 m/W爲極低,其爲缺乏實用性者(非專利文獻1 )。 [先行技術文獻] 0 [專利文獻] [專利文獻1]特開2006-7363 6號公報 [專利文獻2]特開2004-3 7962號公報 [專利文獻3]特開2005- 1 203 43號公報 [非專利文獻] [非專手lj 文獻 1 ]Adv. Mater·, 2002, 14, (18) 127 〇 【發明內容】 本發明係有鑑於如此情事所得者,以提供同時具備撓 性聚醯亞胺薄膜、及發光亮度等元件特性優良影像顯示裝 置及有機EL元件爲目的。 本發明者們,已發現含有藉由上述式[5]所示TDA化合 物、與式[6]所示BAPB化合物的聚縮合及亞胺化所得之 TDA-BAPB化合物聚醯亞胺之薄膜爲高光透過性、高耐熱 性、高靭性且在低吸水率下具有撓性,可作爲有機EL顯示 器或液晶顯示器等影像顯示裝置用基板(光學薄膜)使用 201101924 (特願2〇08-271947),但對於具有該薄膜之元件的特性 亦有著改善之空間。 於此,本發明者們對於提高該TDA-BAPB化合物聚醯 亞胺薄膜作爲基板具備的元件之特性,進行重複詳細檢討 結果,藉由使層合於該基板上作爲陽極使用的ITO進行多 結晶化,發現以發光亮度爲開端的元件特性比使用非晶質 ITO電極時更爲提高,而完成本發明。 即本發明爲提供 1.一種影像顯示裝置,其特徵爲至少具備聚醯亞胺薄 膜基板、與於該基板上所形成之ITO電極所構成,前述IT Ο 電極爲多結晶IT◦電極,前述聚醯亞胺薄膜爲含有至少10 莫耳%以上的式[1 ]所示重複單位; [化2](wherein R1 and R2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 5 carbon atoms, and R3' R4 and R5 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and carbon. 2 to 5 alkenyl groups, 1 to 5 carbon atoms of alkoxy 201101924, a cycloalkyl group having 3 to 7 carbon atoms, a nitrile group, or a carboxyl group.) Further, it has been reported to have a polyimide substrate and An organic electroluminescence device of a polycrystalline ITO electrode, which has a current density of 100 A/m 2 at a voltage of 14 V and an extremely low luminous efficiency of 1 1 m/W at a current density of 100 A/m 2 , which is a lack thereof. Practicality (Non-Patent Document 1). [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-7363 No. [Non-patent literature] [Non-specialized lj document 1] Adv. Mater·, 2002, 14, (18) 127 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 挠性 挠性An image display device and an organic EL device are excellent in element characteristics such as an amine film and a light-emitting luminance. The present inventors have found that a film containing a TDA-BAPB compound polyimine obtained by polycondensation and imidization of a TDA compound represented by the above formula [5] and a BAPB compound represented by the formula [6] is a high gloss. It is used as a substrate (optical film) for an image display device such as an organic EL display or a liquid crystal display, and it is used as a substrate (optical film) such as an organic EL display or a liquid crystal display, but it has flexibility, high heat resistance, high toughness, and flexibility at a low water absorption rate, but it is used in 201101924 (Japanese Patent Application No. 2 08-271947). There is also room for improvement in the characteristics of the components having the film. In order to improve the characteristics of the element of the TDA-BAPB compound polyimide film as a substrate, the inventors of the present invention conducted a detailed review of the characteristics of the device, and the polycrystalline silicon used as an anode was laminated on the substrate. Further, it has been found that the characteristics of the element starting with the luminance of the light are more improved than when the amorphous ITO electrode is used, and the present invention has been completed. That is, the present invention provides a video display device comprising at least a polyimide film substrate and an ITO electrode formed on the substrate, wherein the IT Ο electrode is a polycrystalline IT ◦ electrode, and the concentrating The quinone imine film is a repeating unit represented by the formula [1] containing at least 10 mol% or more; [Chemical 2]

(式中’ R1及R2各獨立表示氫原子、鹵素原子、或碳數1 〜5的烷基、R3、R4及R5各獨立表示氫原子、鹵素原子、 碳數1〜10的烷基、碳數2〜5的鏈烯基、碳數1〜5的烷氧 基、碳數3〜7的環烷基、腈基、或羧基,n表示整數)。 2.如1_的影像顯示裝置,其中前述聚醯亞胺薄膜含有 至少10莫耳。/❶以上的式[2]所示重複單位; [化3](wherein R1 and R2 each independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 5 carbon atoms, and R3, R4 and R5 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and carbon. An alkenyl group of 2 to 5, an alkoxy group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 7 carbon atoms, a nitrile group or a carboxyl group, and n is an integer. 2. An image display apparatus according to 1 wherein said polyimine film contains at least 10 moles. /❶ repeating the unit shown in the formula [2]; [Chemical 3]

C2] -8 - 201101924 (式中,η表示與前述相同意思)。 3.—種有機EL元件’其特徵爲至少具備聚醯亞胺薄膜 基板、與形成於該基板上之ITO電極所構成,前述ITO電極 爲多結晶ITO電極’前述聚醯亞胺薄膜爲含有至少1〇莫耳 %以上的式Π ]所示重複單位;C2] -8 - 201101924 (where η represents the same meaning as described above). 3. An organic EL device characterized by comprising at least a polyimide film substrate and an ITO electrode formed on the substrate, wherein the ITO electrode is a polycrystalline ITO electrode, and the polyimide film contains at least 1〇 More than 5% of the formula Π] repeat unit shown;

[化4][Chemical 4]

[1] (式中,R1〜R5、及η表示與前述相同意思)。 4.如3.之有機EL元件,其中前述聚醯亞胺薄膜爲含有 至少10莫耳%以上的式[2]所示重複單位; [化5][1] (wherein R1 to R5 and η have the same meanings as described above). 4. The organic EL device according to 3., wherein the polyimine film is a repeating unit represented by the formula [2] containing at least 10 mol% or more; [Chemical 5]

❹ (式中,η表示與前述相同意思。) 5. 如3.或4.之有機EL元件,其中於前述多結晶ΙΤΟ電極 上具備以電洞注入層、電洞輸送層、由有機物所成之發光 層、電子注入層及陰極之順序所層合者。 6. 如5.之有機EL元件,其中前述電洞注入層含有聚( 苯乙烯磺酸酯)/聚[2,3-二氫吩(.3,41〇-1,4-戴奧辛)’ 前述電洞輸送層含有雙[Ν-(卜萘基)-Ν-苯基]聯苯胺’由 - 前述有機物所成之發光層及電子注入層含有參(8-羥喹啉 )鋁,前述陰極爲Al-Li及Α1之層合電極。 201101924 7. 如4.〜6.中任一有機EL元件,其中前述多結晶ITO電 極爲,於前述聚醯亞胺薄膜基板上層合非晶質ΙΤ0膜後, 將該非晶質ΙΤΟ膜進行加熱處理後所形成。 8. 如7.之有機EL元件,其中前述加熱處理在1〇4〜1〇_4η (wherein η represents the same meaning as described above.) 5. The organic EL device according to 3. or 4. wherein the polycrystalline germanium electrode is provided with a hole injection layer, a hole transport layer, and an organic substance. The layers of the light-emitting layer, the electron injecting layer, and the cathode are laminated. 6. The organic EL device according to 5. wherein the hole injection layer contains poly(styrenesulfonate)/poly[2,3-dihydrophene (.3,41〇-1,4-dioxine)' The hole transport layer contains bis[(-naphthyl)-fluorenyl-phenyl]benzidine'. The light-emitting layer and the electron injection layer formed of the above organic substance contain ginseng (8-hydroxyquinoline) aluminum, and the cathode is Al- Laminated electrodes of Li and Α1. The organic EL device of any one of the above-mentioned polycrystalline ITO electrodes, wherein the amorphous ruthenium film is laminated on the polyimine film substrate, and then the amorphous ruthenium film is heat-treated. Formed afterwards. 8. The organic EL device as in 7, wherein the aforementioned heat treatment is at 1〇4~1〇_4

Pa之減壓下進行。 9. 如7.或8.之有機EL元件,其中前述加熱處理在100〜 3 0 0 °C下進行。 10. 如9.之有機EL元件,其中前述加熱處理在120〜 2 4 0 °C下進行。 11. —種如5.之有機EL元件的製造方法,其特徵爲於 前述聚醯亞胺薄膜基板上層合非晶質ITO膜,將該非晶質 IT Ο膜進行加熱處理而製作多結晶IT0電極後,以電洞注入 層、電洞輸送層、由有機物所成之發光層、電子注入層及 陰極的順序進行層合。 12. 如11.之有機EL元件的製造方法,其中將前述加熱 處理在104〜l(T4Pa之減壓下進行。 13. 如1 1 ·或12.之有機EL元件的製造方法,其中將前述 加熱處理在100〜300 °C下進行。 14. 如13.之有機EL元件的製造方法,其中將前述加熱 處理在120〜240°C下進行。 [發明之效果] 本發明爲可提供同時具備撓性聚醯亞胺薄膜、以及發 光亮度等元件特性優良之影像顯示裝置及有機電致發光元 -10- 201101924 件。 實施發明的形態 以下對於本發明做更詳細說明。 首先’對於構成本發明之元件的基板之聚醯亞胺薄膜 ' 做說明。 本發明中’構成聚醯亞胺薄膜基板之聚醯亞胺薄膜爲 〇 3有至少ίο莫耳%以上的上述式[1]所示重複單位者。 其中’式[1]中,作爲鹵素原子,可舉出氟原子、氯原 子、溴原子、碘原子。 碳數1〜10的烷基可爲直鏈、或分支任一,作爲該具 體例可舉出甲基、乙基、η -丙基、i -丙基、η -丁基、i -丁基 、s-丁基、t-丁基、η-戊基、i-戊基、t_戊基、ne0-戊基、 η -己基、庚基、辛基、壬基、癸基等。 作爲碳數2〜5的鏈烯基,例如可舉出乙烯基、丙烯基 〇 、丁烯基、戊烯基等。 作爲碳數1〜5的烷氧基,例如可舉出甲氧基、乙氧基 、η-丙氧基、i-丙氧基、η-丁氧基、s-丁氧基' t-丁氧基、 η-戊氧基等。 作爲碳數3〜7的環烷基,可舉出環丙基、環丁基、環 戊基、環己基、環庚基等。 且上述中,η表示正’丨表示異’ s表示第二’ t表示第 三 0 本發明中,聚醯亞胺之數平均分子量,若考慮到成爲 -11 - 201101924 薄膜時的柔軟性等時’以5,〇〇〇以上爲佳,以6,000〜 100,000爲更佳。 因此,上述式[1]及[2]中之η爲使聚醯亞胺的數平均分 子量成爲5,000以上之整數時爲佳。具體爲以8〜180爲佳 ,特別以1 〇〜1 〇 〇爲適合。 本發明所使用的聚醯亞胺薄膜爲,若含有10莫耳%以 上的上述式所示重複結構者即可,特別具有高耐熱性及透 明性,欲使其成爲柔軟性優良的聚醯亞胺薄膜時’含有5 0 莫耳%以上的上述結構者爲佳,以含有7 0莫耳%以上者爲 較佳,以含有90莫耳%以上者爲最適。 具有上述式Π]及[2]所示重複單位的聚醯亞胺可由將 具有下述式[3 ]及[4]所示重複單位的聚醯胺酸進行亞胺化 而得到。 [化6]Pa is carried out under reduced pressure. 9. The organic EL device according to 7. or 8. wherein the aforementioned heat treatment is carried out at 100 to 300 °C. 10. The organic EL device according to 9. wherein the aforementioned heat treatment is carried out at 120 to 240 °C. 11. A method of producing an organic EL device according to the invention, characterized in that an amorphous ITO film is laminated on the polyimide film substrate, and the amorphous IT film is heat-treated to form a polycrystalline IT0 electrode. Thereafter, lamination is performed in the order of the hole injection layer, the hole transport layer, the light-emitting layer made of the organic material, the electron injection layer, and the cathode. 12. The method of producing an organic EL device according to 11., wherein the heat treatment is carried out at a pressure of 104 to 1 (T4Pa under reduced pressure. 13. The method for producing an organic EL device according to 1 1 or 12. The heat treatment is carried out at 100 to 300 ° C. 14. The method for producing an organic EL device according to 13., wherein the heat treatment is carried out at 120 to 240 ° C. [Effects of the Invention] The present invention is provided with both A flexible polyimide film and an image display device having excellent device characteristics such as light-emitting luminance and an organic electroluminescence device-10-201101924. MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail. The polyimine film of the substrate of the element is described. In the present invention, the polyimide film constituting the polyimide film substrate has a repeat of the above formula [1] in which 〇3 has at least ίο mol % or more. In the formula [1], examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkyl group having 1 to 10 carbon atoms may be a straight chain or a branch. Specific examples include methyl and ethyl groups. Η-propyl, i-propyl, η-butyl, i-butyl, s-butyl, t-butyl, η-pentyl, i-pentyl, t-pentyl, ne0-pentyl, Η-hexyl, heptyl, octyl, decyl, decyl, etc. Examples of the alkenyl group having 2 to 5 carbon atoms include a vinyl group, a propenyl hydrazine, a butenyl group, a pentenyl group and the like. The alkoxy group of 1 to 5 may, for example, be a methoxy group, an ethoxy group, a η-propoxy group, an i-propoxy group, an η-butoxy group or an s-butoxy 't-butoxy group. And η-pentyloxy. The cycloalkyl group having a carbon number of 3 to 7 may, for example, be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or a cycloheptyl group.丨 indicates that 's' indicates that the second 't indicates the third zero. In the present invention, the number average molecular weight of the polyimine is considered to be 5 or more when considering the flexibility when the film is -11 - 201101924. Preferably, it is more preferably 6,000 to 100,000. Therefore, it is preferable that η in the above formulas [1] and [2] is such that the number average molecular weight of the polyimine is 5,000 or more. Specifically, it is 8 to 180. Preferably, it is particularly suitable for 1 〇~1 。. The polyimine film used in the above formula may have a repeating structure of the above formula, and particularly has high heat resistance and transparency, and is intended to be a polyimide film having excellent flexibility. 'The above structure is preferably 50% by mole or more, preferably 70% by mole or more, and most preferably 90% by mole or more. It is represented by the above formulas Π] and [2]. The polyimine of the repeating unit can be obtained by imidating polylysine having a repeating unit represented by the following formulas [3] and [4]. [Chemical 6]

(式中,R1〜R5、及η表示與上述相同意思。) [化7](wherein R1 to R5 and η have the same meanings as described above.) [Chem. 7]

[4] 這些式[3]及[4]所示聚醯胺酸如上述,可藉由式[5]所 示TDΑ化合物、與以式[6]所示ΒΑΡΒ化合物之聚縮合而合 成。 本發明中,作爲TDA化合物,可舉出3,4-二羧基- -12- 201101924 1.2.3.4- 四氫-1-萘琥珀酸二酐(丁0人)、2-甲基-3,4-二羧 基-1,2,3,4-四氫-1-萘琥珀酸二酐'2-乙基-3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐、2-11-丙基-3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐、2-11-丁基-3,4-二羧基- 1.2.3.4- 四氫-卜萘琥珀酸二酐、2-11-戊基-3,4-二羧基- 1.2.3.4- 四氫-卜萘琥珀酸二酐、5-甲基-3,4-二羧基- 1.2.3.4- 四氫-1-萘琥珀酸二酐、6-甲基-3,4-二羧基- 0 1,2,3,4-四氫-1-萘琥珀酸二酐、7-甲基-3,4-二羧基- 1.2.3.4- 四氫-1-萘琥珀酸二酐、8 -甲基-3,4-二羧基-1,2,3,4·四氫-1-萘琥珀酸二酐、5,8-二甲基-3,4-二羧基- 1.2.3.4- 四氫-1-萘琥珀酸二酐、5-氯-3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐、6-氯-3,4-二羧基-1,2,3,4 -四氫-1-萘琥珀酸二酐等。彼等中由容易獲得之觀點來看以TD A爲 佳。 另一方面,作爲BAPB化合物,可舉出1,3-雙(4-胺基 〇 苯氧)苯(以下簡稱爲1,3-BAPB ) 、1,4_雙(4-胺基苯氧 )苯、1,3-雙(4-胺基-3-甲基苯氧)苯、1,3-雙(4-胺基 苯氧)_5·甲基苯、3-雙(4_胺基苯氧)-5-癸基苯、1,3-雙 (4·胺基苯氧)-5-二十烷基苯、3-雙(4-胺基-3-十二烷基 苯氧)-5-苯、1,3-雙(4-胺基苯氧)-5-氰基苯、1,3-雙( 4-胺基苯氧)-5-氯苯、1,3-雙(4-胺基苯氧)_5_癸基苯、 1,3-雙(4_胺基苯氧)-5-甲氧基苯、1,3-雙(4_胺基苯氧 )-5-乙烯基苯、1,3-雙(4-胺基苯氧)-5-烯丙基苯、1,3-雙(4-胺基苯氧)-5-羧基苯、1,3-雙(4-胺基苯氧)-5-環 -13- 201101924 丙基苯、3-雙(4-胺基苯氧)_5_環己基苯、1,3-雙(4_胺 基苯氧)苯、1,4-雙(3-胺基苯氧)苯、1,3-雙(3-胺基-4-甲基苯氧)苯、3-雙(3-胺基苯氧)-5_甲基苯、1,3-雙 (3-胺基苯氧)-5-癸基苯、1,3-雙(3-胺基苯氧)-5-二十 烷基苯、3-雙(3-胺基-4-十二烷基苯氧)-5-苯、1,3-雙( 3-胺基苯氧)_5_氰基苯、1,3-雙(3-胺基苯氧)-5-氯苯、 3-雙(3-胺基苯氧)-5-癸基苯、1,3-雙(3-胺基苯氧)-5-甲氧基苯、1,3-雙(3 -胺基苯氧)-5 -乙烯基苯、I,3-雙( 3 -胺基苯氧)-5 -烯丙基苯、1,3 -雙(3 -胺基苯氧)-5 -羧基 苯、1,3 -雙(3 -胺基苯氧)-5 -環丙基苯、3 -雙(3 -胺基苯 氧)-5-環己基苯等。彼等中,由所得之薄膜物性面來看以 1 , 3 - B A P B 爲佳。 且,本發明所使用的聚醯亞胺薄膜中,含有1 0莫耳% 以上的上述式Π]及[2]之任一重複單位的同時,不會影響 到對於所得之聚醯亞胺薄膜的物性下,可同時使用上述 TD A化合物以外的一般聚醯亞胺的合成所使用之四羧酸化 合物及其衍生物。 作爲該具體例,可舉出1,2,3,4-環丁烷四羧酸、 2,3,4,5-四氫呋喃四羧酸、1,2,4,5-環己烷酸、3,4-二羧基-1-環己基琥珀酸、3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸、 雙環[3.3.0]辛烷-2,4,6,8-四羧酸等脂環式四羧酸、及這些 二酐以及這些二羧酸二酸鹵化物等。 又,亦可舉出焦蜜石酸、2,3,6,7-萘四羧酸、l,2,5,6-萘四羧酸、l,4,5,8-萘四羧酸、2,3,6,7-蒽四羧酸、l,2,5,6- -14 - 201101924 恵四殘酸、3,3 ’,4,4 ’ -聯苯基四殘酸、2,3,3 ’,4 -聯苯基四羧 酸、雙(3,4-二羧基苯基)醚、3,3’,4,4’-二苯甲酮四羧酸 、雙(3,4-二羧基苯基)甲烷、2,2-雙(3,4-二羧基苯基) 丙烷、1,1,1,3,3,3-六氟- 2,2-雙(3,4-二羧基苯基)丙院、 雙(3,4-二羧基苯基)二甲基矽烷、雙(3,4-二竣基苯基 )二苯基矽烷、2,3,4,5-吡啶四羧酸、2,6-雙(3,4·二殘基 苯基)吡啶等芳香族四羧酸及這些酸二酐、以及這些二殘 0 酸二酸鹵化物等。且,這些四羧酸化合物可單獨使用1種 或亦可混合2種以上後使用。 另一方面,作爲二胺含有上述式[1]及[2]之任一重複 單位1 〇莫耳%以上之同時,不會對於所得之聚醯亞胺薄膜 的物性產生影響下,可使用上述BAPB化合物以外的其他 二胺化合物。 作爲該具體例,可舉出p_伸苯基二胺、m_伸苯基二胺 、2,5·二胺基甲苯、2,6 -二胺基甲苯、4,4,-二胺基聯苯基 〇 、3,3二甲基_4,4’-二胺基聯苯基、3,3,-二甲氧基-4,4’-二 胺基聯苯基、二胺基二苯基甲烷、二胺基二苯基醚、2,2,_ 二胺基二苯基丙烷、雙(3,5_二乙基胺基苯基)甲烷、 二胺基二苯基颯、二胺基二苯甲酮、二胺基萘、i,4_雙( 4_胺基苯氧)苯、I,4-雙(4_胺基苯基)苯、9,1〇_雙(4_ 胺基苯基)蒽、13 —雙(4_胺基苯氧)苯、4,4,_雙(4 -胺 基苯氧)二苯基颯、2,2 -雙[4-(4 -胺基苯氧)苯基]丙烷、 2,2’-三氟甲基_4,4,_二胺基聯苯基等芳香族二胺;雙(4_ 胺基環己基)甲烷、雙(4_胺基-3_甲基環己基)甲烷、 -15- 201101924 4,4’-伸甲基雙(2-甲基環己基胺)等脂環式二胺化合 四伸甲基二胺、六伸甲基二胺等脂肪族二胺化合物等 些二胺化合物可單獨使用1種、或亦可混合2種以上後 〇 合成上述聚醯胺酸時的全四羧酸二酐化合物之莫 與全二胺化合物之莫耳數的比以羧酸化合物/二胺化 = 0.8〜1.2爲佳。與一般的聚縮合反應同樣地,該莫 越接近1,所生成之聚合物的聚合度越大。若聚合度 時,聚醯亞胺塗膜的強度會變的不充分,又聚合度過 ,聚醯亞胺塗膜形成時之作業性會有變差的情況。 因此,本反應中之生成物的聚合度以聚醯胺酸溶 還原黏度換算下,以〇.〇5〜5.0dl/g(30°C的N-甲基-2-烷酮中之濃度0.5g/dl)爲佳。 作爲使用於聚醯胺酸合成之溶劑,例如可舉出m -、N -甲基-2-吡咯烷酮(NMP) 、:Ν,Ν -二甲基甲醯胺( )、Ν,Ν-二甲基乙醯胺(DMAc) 、N-甲基己內醯胺 甲基亞楓_、四甲基尿素、吡啶、二甲基碾、六甲基膦 、r - 丁內酯等。這些可單獨使用、亦可混合使用。 即使爲不溶解聚醯胺酸之溶劑,在可得到均勻溶液之 內亦可與上述溶劑一起使用。 聚縮合反應的溫度爲-2 0〜1 5 0 °C,較佳爲選自 I00°c之任意溫度。 本發明所使用的聚醯亞胺可由將如以上所示合成 醯胺酸藉由加熱後經脫水閉環(熱亞胺化)而得。且 物; ,這 使用 耳數 合物 耳比 過小 大時 液的 吡咯 甲酚 DMF 醯胺 且, 範圍 -5〜 之聚 ,此 -16- 201101924 時亦可將聚醯胺酸在溶劑中轉化爲亞胺,作爲溶劑可溶性 聚醯亞胺使用。 又’亦可採用使用公知脫水閉環觸媒使其化學性閉環 的方法。 藉由加熱的方法可在100〜300〇C,較佳爲120〜2501 之任意溫度下進行。 化學性閉環方法,例如可在吡啶或三乙基胺等、與乙 0 酸酐等存在下進行,此時的溫度可選自_2〇〜200 °C之任意 溫度。 如此所得之聚醯亞胺溶液亦可直接使用,又亦可加入 甲醇、乙醇等貧溶劑使其沈澱,將此分離後的聚醯亞胺作 爲粉末’或亦可將該聚醯亞胺粉末溶解於適當溶劑中再使 用。 再溶解用溶劑若爲可溶解所得之聚醯亞胺者即可,並 無特別限定,例如可舉出m-甲酚、2-吡咯烷酮、NMP、N-〇 乙基-2-吡咯烷酮、N-乙烯基-2-吡咯烷酮' DMAc、DMF、 γ-丁內酯等。 又’即使爲在單獨下無法溶解聚醯亞胺的溶劑’若爲 不損害其溶解性之範圍下可加入上述溶劑後使用。作爲該 具體例可舉出乙基賽路蘇、丁基賽路蘇、乙基卡必醇、丁 基卡必醇、乙基卡必醇乙酸酯、乙二醇、1-甲氧基-2-丙醇 、1-乙氧基-2-丙醇、1-丁氧基-2-丙醇、1-苯氧-2-丙醇、 ' 丙二醇單乙酸酯、丙二醇二乙酸酯、丙二醇-1-單甲基醚-2-乙酸酯、丙二醇-1-單乙基醚-2-乙酸酯、二丙二醇、2- -17- 201101924 (2 -乙氧基丙氧基)丙醇、乳酸甲基酯、乳酸乙基酯、乳 酸η-丙基酯、乳酸η-丁基酯、乳酸異戊基酯等。 本發明所使用的聚醯亞胺薄膜可藉由將聚合所得之聚 醯胺酸溶液或將此經化學亞胺化後’使其再沈澱所得之聚 醯亞胺的有機溶劑溶液塗佈於玻璃板等基材上,將溶劑蒸 發後而製作。 此時較佳在1〜l,〇〇〇Pa之減壓下在50〜100°C進行1〜5 小時預備燒成後,藉由採用在超過l〇〇°C〜160 °C下進行1〜 5小時,其次在超過1 6 0 °C〜2 0 0 °C下進行1〜5小時,進一步 在超過200°C〜3 00°C下進行1〜5小時燒成的多階段昇溫法 ,可製造出著色較少且均勻表面平滑性高的聚醯亞胺薄膜 〇 如此所製作之聚醯亞胺薄膜其爲膜厚5〇〜5 00 μιη,在 400nm之光透過率爲70%以上,減少10%重量之溫度3 00°C 以上,吸水率1%以下,楊氏係數1.5GP a以上,最大伸率 5 %以上的高透明性、高機械性強度、高耐熱性、低吸水性 、且兼具柔軟性者。 該聚醯亞胺薄膜可作爲有機EL顯示器用基板、液晶顯 示器用基板等影像顯示裝置用基板適用。 本發明的影像顯示裝置及有機EL元件因具有使用作爲 上述聚醯亞胺薄膜及陽極的多結晶ITO電極之該特徵,故 作爲其他構成構件可由過去公知者做適宜選擇使用即可。 作爲代表例’如下述所述的對有機EL顯示器裝置之應 用例。 -18- 201101924 本發明的有機EL元件爲具有由上述聚醯亞胺薄膜所成 之基板、與形成於該基板上的多結晶ITO電極者,作爲該 具體構成一例,可舉出於聚醯亞胺薄膜基板上將以多結晶 ITO電極(陽極)、電洞注入層、電洞輸送層、由有機物 所成之發光層、電子注入層、透明陰極的順序層合者。 作爲上述多結晶ITO電極,雖無特別限定,但本發明 中’使用於聚醯亞胺薄膜基板上,一旦層合非晶質ITO膜 〇 後’將該非晶質ITO膜進行加熱處理後使ITO多結晶化後者 爲佳。 其中’作爲加熱處理溫度,若考慮到更提高結晶化度 時’作爲最終到達溫度以1 0 0〜3 0 0 °c爲佳,以1 2 0〜2 7 0 t: 爲較佳,以1 2 0〜2 4 (TC爲更佳。 加熱處理時間於上述最終到達溫度以〇. 1〜30小時爲 佳,以0 · 2〜2 0小時爲較佳。 又’加熱處理在104〜l(T4Pa之減壓下進行爲佳。 〇 且’非晶質IT0膜可藉由一般濺鍍法或離子鍍敷法製 作。 作爲構成上述電洞注入層之材料,例如可舉出C up c、 H2Pc等酞花青系材料;4,4,,4,,_參[N- ( 3_甲基苯基)-N — 苯 基月女基]二本基 fee (m-MTDATA) 、TPTE、FTPD1 〜7、 OTPAC1〜5、OTPAC6等芳香族胺系材料、聚(苯乙烯磺 酸醋)/聚[2,3-—氫吩(3,4^))-1,4-戴奧辛)(PEDOT-PSS)等局分子系材料等’但本發明中特別以pED〇T-PSS 爲佳。 -19- 201101924 作爲構成上述電洞輸送層之材料,例如可舉出雙[N-(1-萘基)-N-苯基]聯苯胺(NPB)[別名:4,4,-雙[N-( 卜萘基)-N -苯基-胺基]-聯苯基](α-NPD)]、TPD、2Me-TPD、PDA、TPAC、PAA、Diamine、TPM等芳香族胺系材 料等,但本發明中特別以NPB爲佳。 作爲構成上述發光層之有機物材料,可使用低分子發 光材料、高分子發光材料之任一者。 作爲低分子發光材料’可爲螢光材料、燐光材料之任 一者。 作爲螢光材料’例如可舉出參(8 -羥唾啉)鋁(A1 q 3 )、參(4-甲基-8-羥喹啉)鋁(Almq3 ) 、Bebq2、DPVBi 、H2Pc、N,N’-雙(2,5-二第三丁 基苯基)-3,4,9,10-茈二 羧基亞胺(BPPC) 、QD、4-(二氰基伸甲基)-2 -甲基- 6-(p-二甲基胺基苯乙烯基)_4H_吡喃(Dcm) 、 (1,1〇-菲 繞啉)-參-(4,4,4 -三氟-1- ( 2 -噻吩基)-丁烷_丨,3_二酸) 銪[Eu(TTA)3(Phen)]、ppCp、紅螢烯、Zn(BQ〇EH)等。 作爲燐光材料’例如可舉出f a c _參(2 _苯基啦B定)f衣 (III)(Ir(ppy)3) 、 I r (pp y) 3 ( a c a c) 、 I r (Fp p y) 3 (a c ac)、 btp2Ir(acac)、FIrpic、Gllr、PtOEP 等。 另一方面’作爲高分子發光材料,例如可舉出PPV、 MEH-PPV等聚對伸苯基伸乙烯系材料;ppp、R〇_ppp等聚 ¥寸伸本基系材料,PAT、PCHMT、pdcHT、P0PT等聚酿吩 系材料’ PDAF、PFBT等聚芴系材料;pMp等聚矽烷系材 料;P V K等昨Π坐系材料等。 -20- 201101924 彼等中,本發明中特別以A1 q3爲佳。 作爲構成上述電子注入層之材料,例如可舉出2_(4_ 聯本基)-5- (4 -第二丁基苯基)惡二哩(pBD)、 BND、BMD、MBSQ、MBDQ、BDD、BBOT、BAPD、Alq3 等’本發明中特別以可得到發揮兼具發光材料之性能的 Alq3爲佳。[4] The polylysine represented by the above formulas [3] and [4] can be synthesized by the polycondensation of the TD oxime compound represented by the formula [5] and the hydrazine compound represented by the formula [6] as described above. In the present invention, as the TDA compound, 3,4-dicarboxy--12-201101924 1.2.3.4-tetrahydro-1-naphthalene succinic dianhydride (but 0 person), 2-methyl-3, 4 may be mentioned. -Dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride '2-ethyl-3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene amber Acid dianhydride, 2-11-propyl-3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride, 2-11-butyl-3,4-dicarboxyl - 1.2.3.4- Tetrahydro-naphthalene succinic dianhydride, 2-11-pentyl-3,4-dicarboxy- 1.2.3.4-tetrahydro-naphthalene succinic dianhydride, 5-methyl-3, 4-Dicarboxy-1.2.3.4- Tetrahydro-1-naphthalene succinic dianhydride, 6-methyl-3,4-dicarboxy- 0 1,2,3,4-tetrahydro-1-naphthalene succinic acid Anhydride, 7-methyl-3,4-dicarboxy- 1.2.3.4-tetrahydro-1-naphthalene succinic dianhydride, 8-methyl-3,4-dicarboxy-1,2,3,4·4 Hydrogen-1-naphthalene succinic dianhydride, 5,8-dimethyl-3,4-dicarboxy- 1.2.3.4-tetrahydro-1-naphthalene succinic dianhydride, 5-chloro-3,4-dicarboxyl -1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride, 6-chloro-3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic dianhydride, etc. . Among them, TD A is preferred from the viewpoint of easy availability. On the other hand, examples of the BAPB compound include 1,3-bis(4-aminoindenyloxy)benzene (hereinafter abbreviated as 1,3-BAPB) and 1,4-bis(4-aminophenoxyl). Benzene, 1,3-bis(4-amino-3-methylphenoxy)benzene, 1,3-bis(4-aminophenoxy)-5-methylbenzene, 3-bis(4-aminobenzene) Oxy)-5-mercaptobenzene, 1,3-bis(4.aminophenoxy)-5-eicosylbenzene, 3-bis(4-amino-3-dodecylphenoxy)- 5-Benzene, 1,3-bis(4-aminophenoxy)-5-cyanobenzene, 1,3-bis(4-aminophenoxy)-5-chlorobenzene, 1,3-double (4 -aminophenoxy)_5_mercaptobenzene, 1,3-bis(4-aminophenoxy)-5-methoxybenzene, 1,3-bis(4-aminophenoxy)-5-ethylene Benzobenzene, 1,3-bis(4-aminophenoxy)-5-allylbenzene, 1,3-bis(4-aminophenoxy)-5-carboxybenzene, 1,3-double (4 -aminophenoxy)-5-cyclo-13- 201101924 propylbenzene, 3-bis(4-aminophenoxy)_5-cyclohexylbenzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,3-bis(3-amino-4-methylphenoxy)benzene, 3-bis(3-aminophenoxy)-5-A Benzobenzene, 1,3-bis(3-aminophenoxy)-5-mercaptobenzene, 1,3-bis(3-aminobenzene) )-5-Eicosylbenzene, 3-bis(3-amino-4-dodecylphenoxy)-5-benzene, 1,3-bis(3-aminophenoxy)_5-cyano Benzene, 1,3-bis(3-aminophenoxy)-5-chlorobenzene, 3-bis(3-aminophenoxy)-5-mercaptobenzene, 1,3-bis(3-aminobenzene) Oxy)-5-methoxybenzene, 1,3-bis(3-aminophenoxy)-5-vinylbenzene, I,3-bis(3-aminophenoxy)-5-allylbenzene 1,3 -bis(3-aminophenoxy)-5-carboxybenzene, 1,3-bis(3-aminophenoxy)-5-cyclopropylbenzene, 3-bis(3-aminobenzene) Oxygen)-5-cyclohexylbenzene and the like. Among them, 1 , 3 - B A P B is preferred from the viewpoint of the physical properties of the obtained film. Further, the polyimine film used in the present invention contains 10 mol% or more of any of the above repeating units of the formulae [] and [2], and does not affect the obtained polyimide film. Under the physical properties, the tetracarboxylic acid compound and its derivative used in the synthesis of a general polyimine other than the above TD A compound can be used at the same time. Specific examples of this include 1,2,3,4-cyclobutanetetracarboxylic acid, 2,3,4,5-tetrahydrofurantetracarboxylic acid, 1,2,4,5-cyclohexane acid, and 3 , 4-dicarboxy-1-cyclohexyl succinic acid, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinic acid, bicyclo[3.3.0]octane-2,4, An alicyclic tetracarboxylic acid such as 6,8-tetracarboxylic acid, and these dianhydrides and these dicarboxylic acid diacid halides. Further, pyroic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 2,3,6,7-decanetetracarboxylic acid, l,2,5,6- -14 - 201101924 恵tetraresidic acid, 3,3 ',4,4 '-biphenyltetrahydro acid, 2,3 , 3 ',4-diphenyltetracarboxylic acid, bis(3,4-dicarboxyphenyl)ether, 3,3',4,4'-benzophenonetetracarboxylic acid, bis(3,4- Dicarboxyphenyl)methane, 2,2-bis(3,4-dicarboxyphenyl)propane, 1,1,1,3,3,3-hexafluoro-2,2-bis(3,4-di Carboxyphenyl)propylidene, bis(3,4-dicarboxyphenyl)dimethyloxane, bis(3,4-dimercaptophenyl)diphenylnonane, 2,3,4,5-pyridine tetra An aromatic tetracarboxylic acid such as a carboxylic acid or a 2,6-bis(3,4.di residue phenyl)pyridine; and these acid dianhydrides, and these dicarboxylic acid diacid halides. Further, these tetracarboxylic acid compounds may be used singly or in combination of two or more kinds. On the other hand, when the diamine contains at least 1% by mole of the repeating unit of the above formulas [1] and [2], the above properties may not be affected by the physical properties of the obtained polyimide film. Other diamine compounds other than the BAPB compound. Specific examples of this include p-phenylenediamine, m-phenylenediamine, 2,5-diaminotoluene, 2,6-diaminotoluene, and 4,4,-diamino group. Biphenyl hydrazine, 3,3 dimethyl-4,4'-diaminobiphenyl, 3,3,-dimethoxy-4,4'-diaminobiphenyl, diaminodi Phenylmethane, diaminodiphenyl ether, 2,2,-diaminodiphenylpropane, bis(3,5-diethylaminophenyl)methane, diaminodiphenylphosphonium, two Aminobenzophenone, diaminonaphthalene, i,4_bis(4-aminophenoxy)benzene, I,4-bis(4-aminophenyl)benzene, 9,1〇_double (4_ Aminophenyl)anthracene, 13-bis(4-aminophenoxy)benzene, 4,4,_bis(4-aminophenoxy)diphenylanthracene, 2,2-bis[4-(4- Aromatic diamines such as aminophenoxy)phenyl]propane, 2,2'-trifluoromethyl-4,4,-diaminobiphenyl; bis(4-aminocyclohexyl)methane, bis (4) _Amino-3_methylcyclohexyl)methane, -15- 201101924 4,4'-extended methyl bis(2-methylcyclohexylamine) and other alicyclic diamine compound tetramethylamine, six Some diamine compounds such as methyl diamine and other aliphatic diamine compounds can be used alone. The ratio of the total tetracarboxylic dianhydride compound to the molar ratio of the total diamine compound in the case of using one or two or more kinds of the above polyfluorene to form the carboxylic acid compound/diamine = 0.8 to 1.2 is preferred. As in the case of the general polycondensation reaction, the closer to 1, the greater the degree of polymerization of the resulting polymer. When the degree of polymerization is increased, the strength of the polyimide film is insufficient, and the degree of polymerization is too high, and the workability at the time of formation of the polyimide film may be deteriorated. Therefore, the degree of polymerization of the product in the present reaction is 0.5% to 5.0 dl/g (concentration of 0.5% in N-methyl-2-alkanone at 30 ° C) in terms of polyphosphoric acid-reducing viscosity. g/dl) is better. Examples of the solvent used for the synthesis of polylysine include m-, N-methyl-2-pyrrolidone (NMP), hydrazine, hydrazine-dimethylformamide ( ), hydrazine, hydrazine-dimethyl methacrylate. Ethyl amide (DMAc), N-methyl caprolactam methyl flavonoid, tetramethyl urea, pyridine, dimethyl milling, hexamethylphosphine, r-butyrolactone, and the like. These can be used singly or in combination. Even if it is a solvent which does not dissolve polyamic acid, it can be used together with the above solvent in a uniform solution. The temperature of the polycondensation reaction is -2 0 to 150 ° C, preferably any temperature selected from I00 ° C. The polyimine used in the present invention can be obtained by synthesizing lysine as shown above by heating, followed by dehydration ring closure (thermal imidization). And the use of the auricular compound to the ear of the small molar solution of pyrrole cresyl DMF decylamine and the range of -5 to the poly, this -16,019,019,24 can also convert the poly-proline to the solvent The imine is used as a solvent-soluble polyimine. Further, a method of chemically ring-closing using a known dehydration ring-closing catalyst can also be employed. The heating can be carried out at any temperature of 100 to 300 ° C, preferably 120 to 2501. The chemical ring closure method can be carried out, for example, in the presence of pyridine or triethylamine or the like in the presence of acetaldehyde anhydride, and the temperature at this time can be selected from any of _2 Torr to 200 °C. The polyimine solution thus obtained may also be used as it is, or may be precipitated by adding a poor solvent such as methanol or ethanol, and the separated polyimine may be used as a powder' or the polyimine powder may be dissolved. Re-use in a suitable solvent. The solvent for re-dissolution is not particularly limited as long as it can dissolve the obtained polyimine, and examples thereof include m-cresol, 2-pyrrolidone, NMP, N-fluorenyl-2-pyrrolidone, and N- Vinyl-2-pyrrolidone 'DMAc, DMF, γ-butyrolactone, and the like. Further, even if it is a solvent which cannot dissolve polyimine in a single unit, it can be used by adding the above solvent in a range which does not impair the solubility. As such a specific example, ethyl sirolius, butyl siroliol, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, ethylene glycol, 1-methoxy- 2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol, 1-phenoxy-2-propanol, 'propylene glycol monoacetate, propylene glycol diacetate, Propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate, dipropylene glycol, 2- -17- 201101924 (2-ethoxypropoxy) propyl Alcohol, methyl lactate, ethyl lactate, η-propyl lactate, η-butyl lactate, isoamyl lactate, and the like. The polyimine film used in the present invention can be coated on the glass by a polylysine solution obtained by polymerization or an organic solvent solution of the polyimine obtained by chemically imidating it. It is produced by evaporating a solvent on a substrate such as a plate. In this case, it is preferably carried out at a temperature of 50 to 100 ° C for 1 to 5 hours after the preliminary calcination at a pressure of 〜Pa under reduced pressure of 〇〇〇Pa, by using at a temperature exceeding 1 ° C to 160 ° C. ~5 hours, followed by a multi-stage heating method of 1 to 5 hours at a temperature exceeding 1600 ° C to 200 ° C for 1 to 5 hours, and further at 200 ° C to 300 ° C for 1 to 5 hours. It is possible to produce a polyimide film having less coloration and high surface smoothness. The polyimide film thus produced has a film thickness of 5 Å to 50,000 μm and a light transmittance of 70% or more at 400 nm. 10% by weight of temperature above 300 °C, water absorption of 1% or less, Young's modulus of 1.5GP a or more, maximum elongation of 5% or more, high transparency, high mechanical strength, high heat resistance, low water absorption, And both soft. The polyimide film can be used as a substrate for an image display device such as a substrate for an organic EL display or a substrate for a liquid crystal display. Since the image display device and the organic EL device of the present invention have such a feature as a polycrystalline ITO electrode which is used as the polyimide film and the anode, the other constituent members may be appropriately selected and used by a person skilled in the past. As a representative example, an application example to an organic EL display device as described below. -18-201101924 The organic EL device of the present invention is a substrate having the above polyimide film and a polycrystalline ITO electrode formed on the substrate, and as an example of the specific configuration, On the amine film substrate, a polycrystalline ITO electrode (anode), a hole injection layer, a hole transport layer, a light-emitting layer made of an organic substance, an electron injection layer, and a transparent cathode are laminated in this order. The polycrystalline ITO electrode is not particularly limited, but in the present invention, 'on the polyimide film substrate, once the amorphous ITO film is laminated, the amorphous ITO film is heat-treated to form ITO. The latter is preferred for polycrystallization. Wherein 'as the heat treatment temperature, if it is considered to increase the degree of crystallization more', the final temperature is preferably 10 to 300 ° C, preferably 1 2 0 to 2 70 t: to 1 2 0~2 4 (TC is better. The heat treatment time is at the above final temperature to 〇. 1~30 hours is better, and 0 · 2~2 0 hours is better. Also 'heat treatment at 104~l ( It is preferable to carry out the pressure reduction under the pressure of T4Pa. The amorphous IT0 film can be produced by a general sputtering method or an ion plating method. Examples of the material constituting the hole injection layer include C up c and H2Pc. Isobaric cyanine material; 4, 4, 4,, _ gin [N-( 3_methylphenyl)-N — phenyl phenyl group] bis-fee (m-MTDATA), TPTE, FTPD1 ~7, OTPAC1~5, OTCAC6 and other aromatic amine materials, poly(styrenesulfonate)/poly[2,3-hydropheno(3,4^)-1,4-dioxine) (PEDOT- PSS) such as a molecular material or the like 'But in the present invention, pED〇T-PSS is particularly preferred. -19-201101924 As a material constituting the above-mentioned hole transport layer, for example, bis[N-(1-naphthyl)-N-phenyl]benzidine (NPB) can be cited [alias: 4, 4, - double [N] -(p-naphthyl)-N-phenyl-amino]-biphenyl](α-NPD)], TPD, 2Me-TPD, ARA, TPAC, PAA, Diamine, TPM, etc. In particular, NPB is preferred in the invention. As the organic material constituting the light-emitting layer, any of a low molecular light-emitting material and a polymer light-emitting material can be used. The low molecular luminescent material' may be either a fluorescent material or a calendering material. Examples of the fluorescent material ' include argon (8-hydroxysallium) aluminum (A1 q 3 ), ginseng (4-methyl-8-hydroxyquinoline) aluminum (Almq3), Bebq2, DPVBi, H2Pc, and N, N'-bis(2,5-di-t-butylphenyl)-3,4,9,10-decanedicarboxyimine (BPPC), QD, 4-(dicyanomethyl)-2 - -6-(p-dimethylaminostyryl)_4H-pyran (Dcm), (1,1〇-phenanthroline)-para-(4,4,4-trifluoro-1-( 2 -Thienyl)-butane _ 丨, 3 - diacid) 铕 [Eu(TTA) 3 (Phen)], ppCp, erythritol, Zn (BQ 〇 EH) and the like. Examples of the calendering material include fac _ ginseng (2 _phenyl b b ding) f (III) (Ir (ppy) 3), I r (pp y) 3 ( acac), and I r (Fp py). 3 (ac ac), btp2Ir (acac), FIrpic, Gllr, PtOEP, etc. On the other hand, examples of the polymer light-emitting material include polyparaphenylene-extended vinyl materials such as PPV and MEH-PPV, and polyphenylene-based materials such as ppp and R〇_ppp, PAT, PCHMT, and pdcHT. , P0PT and other materials such as polystyrene materials such as PDAF and PFBT; polydecane-based materials such as pMp; and other materials such as PVK. -20- 201101924 Among them, in particular, A1 q3 is preferred in the present invention. Examples of the material constituting the electron injecting layer include 2—(4—biphenyl)-5-(4-t-butylphenyl)oxadiazine (pBD), BND, BMD, MBSQ, MBDQ, BDD, BBOT, BAPD, Alq3, etc. In the present invention, in particular, Alq3 which exhibits the performance of a light-emitting material is particularly preferable.

作爲構成上述陰極之材料’例如可舉出A1 - L i、A1 - L i F Ο 、AUCe、A1、Mg-Ag等’本發明中特別以Al-Li與A1之層 合體爲佳。 上述各層的製作法爲任意,可使用一般濺鍍法或離子 鍍敷法。又’對於電洞注入層,亦可使用溶液或分散液藉 由轉動塗佈法等塗佈法而製作。 將上述電洞注入層、電洞輸送層、由有機物所成之發 光層、及電子注入層層合於多結晶ITO陽極及陰極間之元 件,以矩陣狀形成於聚醯亞胺薄膜基板上,於陽極及陰極 Ο 間外加電壓於有機E L層流入電流,使畫素發光。所產生的 光由陽極電極側取出於外部。 【實施方式】 [實施例] 以下舉出製造例、實施例及比較例,對本發明做更具 體說明,但本發明並爲限定於下述實施例。實施例中之各 物性的測定裝置如以下所示。 -21 - 201101924 [1 ]分子量 裝置:常溫GPC測定裝置(SSC-7200,(股)Senshu科 學製)Examples of the material constituting the cathode include, for example, A1 - L i, A1 - L i F Ο , AUCe, A1, Mg-Ag, etc. In the present invention, a laminate of Al-Li and A1 is particularly preferable. The above-mentioned respective layers can be produced by any conventional method, and a general sputtering method or an ion plating method can be used. Further, the hole injection layer can also be produced by a coating method such as a spin coating method using a solution or a dispersion. The hole injection layer, the hole transport layer, the light-emitting layer made of an organic substance, and the electron injection layer are laminated on the polycrystalline ITO anode and the cathode, and are formed in a matrix on the polyimide film substrate. A voltage is applied between the anode and the cathode to inject a current into the organic EL layer to cause the pixel to emit light. The generated light is taken out from the anode electrode side to the outside. [Embodiment] [Examples] Hereinafter, the present invention will be further described by way of Production Examples, Examples and Comparative Examples, but the present invention is not limited to the following examples. The measurement device for each physical property in the examples is as follows. -21 - 201101924 [1]Molecular weight Device: Normal temperature GPC measuring device (SSC-7200, (share) Senshu science system)

溶離液:DMFDissolved solution: DMF

[2]TG/DTA (差示熱熱量同時測定裝置) 裝置:Thermoplus TG8120((股)理學電機製)[2] TG/DTA (differential thermal heat simultaneous measuring device) Device: Thermoplus TG8120 ((stock) physics electrical mechanism)

[3]FT-IR[3]FT-IR

裝置:NICOLET 5700 ( Thermo ELECTRON CORPORATIONDevice: NICOLET 5700 ( Thermo ELECTRON CORPORATION

[4] 膜厚 測定器:Micrometer ((股)Santop 製) [5] UV-Vis 光譜 裝置:UV-VIS-NIR SCANNING SPECTROPHOTOMETER ( 自記分光光度計)((股)島津製作所製) [6] X線繞射 裝置:RINT-2000 ( Rigaku公司製) [7] 導電性 裝置:Loresta-GP MCP-T610 (三菱化學(股)製) -22- 201101924 [製造例1]TDA/1,3-BAPB聚醯胺酸及聚醯亞胺之合成、以 及聚醯亞胺薄膜之製作 [化8][4] Film thickness measuring device: Micrometer (manufactured by Santop) [5] UV-Vis spectroscopy device: UV-VIS-NIR SCANNING SPECTROPHOTOMETER (self-recording spectrophotometer) (manufactured by Shimadzu Corporation) [6] X Line diffraction device: RINT-2000 (manufactured by Rigaku Co., Ltd.) [7] Conductive device: Loresta-GP MCP-T610 (manufactured by Mitsubishi Chemical Corporation) -22- 201101924 [Manufacturing example 1] TDA/1,3-BAPB Synthesis of polyaminic acid and polyimine, and production of polyimine film [Chemical 8]

TDA / 1,3-BAPB Polyamic acid +TDA / 1,3-BAPB Polyamic acid +

TDA 1,3>BAPBTDA 1,3>BAPB

於設置於25 t水浴中而附有攪拌機的50mL四口反應燒 瓶中,裝入 l,3-BAPB1.95g(7_0mmol)及 DMAcl6.0g,使 1,3-BAPB溶解於DMAc。繼續一邊攪拌該溶液,一邊溶解 TDA2.10g(7.0mmol)而徐徐添加。其次在26°C下進行24 小時攪拌之聚合反應,得到固體成分20質量%之聚醯胺酸 溶液。 〇 將該溶液流延至75mmxl00mm的玻璃板上後,放入於 減壓乾燥機(壓力1 0 OP a ),進行8 0 °C /4小時、1 4 0 °C /1 . 5小 時、190°C/1.5小時及24(TC/2小時之段階性燒成。其後將附 有薄膜之玻璃基板於8 0 °C湯浴中進行1小時浸漬,由玻璃 板剝離薄膜。將經剝離的薄膜再次放入減壓乾燥機中,減 壓下進行1 00 °C /2小時乾燥。所得之薄膜爲著色少,高透明 •撓性下且強靭平滑性優良的薄膜,各物性値如以下所示 μιη 膜厚:101 -23- 201101924 光透過率( 400nm) : 75% 5 %重量減少溫度(T d 5 :。(:): 374.4 [比較例1 ]有機E L元件之製作及評估 將製造例1所製作之丁0八/1,3-6八?8聚醯亞胺薄膜作爲 基板’以以下各條件製作出高分子型有機E L元件。且,在 以下陽極成膜步驟所製作之IT0於成膜後不進行高溫燒成 ’在低溫、低傷害製程下成膜成非晶質膜。 (a )洗淨步驟:U V臭氧洗淨 (b )陽極成膜步驟 裝置:RF圓錐形標靶濺鍍(ALS技術公司製) 基板溫度:室溫(2 5 °C ) 到達真空度:S5.0xl(T4Pa 成膜真空度:Sl.OxlOdpa 出力:2 0 0 W 預濺鍍時間:5min. 濺鍍時間:120min. 氣體流量:Ar ( lO.Osccm) (c )有機蒸鍍膜步驟 真空度:$ 7.0x1 0_4Pa 蒸鍍速度:S〇.2nm/sec -24- 201101924 (d )陰極成膜條件 真空度:S 7.0x1 (T4Pa 蒸鍍速度:S 0.7 n m / s e c (e )有機EL元件結構 薄膜基板 /ITO ( 3 00nm) /PEDOT-PSS ( 70nm) /NPB (3 0 nm ) /Alq3 ( 40nm ) /Al-Li ( 40nm) / A1 ( 1 〇〇nm ) 0 且PEDOT-PSS ( Aldrich製)係由轉動塗佈法所成膜。 成膜條件」2750rpm,30sec 成膜後乾燥條件:大氣中,燒成溫度:200°C、燒成 時間:10分鐘 且該步驟之燒成條件中,無法觀測到ITO之結晶化波 峰。 [實施例1 ] Ο 將在製造例1所製作之TDA/1,3-BAPB聚醯亞胺薄膜作 爲基板,將比較例1 ( b )陽極成膜步驟所製作之ITO在下 述條件下進行加熱處理以外,於與比較例1相同各條件下 製作出有機EL元件。 <加熱處理條件> 將在陽極成膜步驟所製作之附有非晶質ITO膜的聚醯 亞胺基板,放入真空(旋轉幫浦下連續排氣使爲壓力 4-〇Pa)的爐心管中,在以下條件下進行加熱處理,使非 -25- 201101924 晶質IΤ 0結晶化。 室溫至200°C ( 2_3°c /分鐘) 200°(:〜250°(:(1.3°(:/分鐘) 2 5 0 °C ( 1 2 0分鐘保持) 2 5 0 °C〜室溫(Μ、時、自然冷卻) 對於上述實施例1及比較例1所製作之1Τ 0膜’藉由Χ線 繞射(CuKα )對結晶化之判定、光透過率及導電性進行測 定·評估。X線繞射圖型如圖1所示’ U V _ V1 S光譜(光透 過率)如圖2所示。 如圖1所示,在比較例1所製作之非晶質ITO元件中顯 示結晶狀態(格子之規則序列)’但未見到陡帷波峰。於 低角度側僅觀測到非晶質特有之擴大山型波峰’則明確顯 示ΙΤΟ爲非晶質。 另一方面,在實施例1所製作之加熱處理後的Χ線繞射 圖型爲,觀測到I τ Ο固有之明確波峰(2 2 2 ) 、 ( 4 0 0 )、 ( 440) 、( 622),此明確顯示該ΙΤΟ爲結晶化。 這些薄片電阻在非晶質ΙΤΟ (加熱前)下約150Ω/□’ 在多結晶IΤ Ο (加熱後)下約3 0 Ω / □’藉由施予加熱處理 可提高導電性。 又,如圖2所示,平均透過率在聚醯亞胺基板爲82%’ 在比較例1之非晶質〗τ0下爲68% ’在實施例1的多結晶1το 下爲5 5 %。The 1,3-BAPB was dissolved in DMAc in a 50 mL four-port reaction flask equipped with a stirrer in a 25 t water bath, and charged with 1,3 BAPB 1.95 g (7_0 mmol) and DMACl 6.0 g. While stirring the solution, TDA2.10 g (7.0 mmol) was dissolved and gradually added. Next, polymerization was carried out by stirring at 26 ° C for 24 hours to obtain a polyamine solvent solution having a solid content of 20% by mass. 〇The solution was cast onto a 75 mm x 100 mm glass plate, placed in a vacuum dryer (pressure 1 0 OP a ), and subjected to 80 ° C / 4 hours, 140 ° C / 1.5 hours, 190 ° C/1.5 hours and 24 (TC/2 hours of stepwise firing. Thereafter, the glass substrate with the film was immersed in a 80 °C soup bath for 1 hour, and the film was peeled off from the glass plate. The peeled film was peeled off. The film was again placed in a vacuum dryer and dried at 100 ° C for 2 hours under reduced pressure. The obtained film was a film having less coloration, high transparency, flexibility, and excellent toughness and smoothness, and the physical properties were as follows. Μιη Film thickness: 101 -23- 201101924 Light transmittance (400 nm): 75% 5% weight reduction temperature (T d 5 :. (:): 374.4 [Comparative Example 1] Production and evaluation of organic EL device Production example 1 The produced D-80/1,3-6 octa-8-polyimine film was used as a substrate to produce a polymer-type organic EL device under the following conditions. The IT0 produced in the following anode film formation step was completed. After the film is not fired at a high temperature, the film is formed into an amorphous film under a low temperature and low damage process. (a) Washing step: UV ozone washing (b) Anode film forming step device: RF conical target sputtering (manufactured by ALS Technologies) Substrate temperature: room temperature (2 5 °C) Reaching degree of vacuum: S5.0xl (T4Pa film forming vacuum: Sl.OxlOdpa Output: 2 0 0 W Pre-sputtering time: 5min. Sputtering time: 120min. Gas flow rate: Ar ( lO.Osccm) (c) Organic vapor deposition film step Vacuum: $ 7.0x1 0_4Pa Evaporation speed: S〇.2nm /sec -24- 201101924 (d) Cathode film formation conditions Vacuum degree: S 7.0x1 (T4Pa evaporation rate: S 0.7 nm / sec (e) Organic EL element structure film substrate / ITO (300 nm) / PEDOT-PSS ( 70 nm) / NPB (30 nm) / Alq3 (40 nm) / Al-Li (40 nm) / A1 (1 〇〇 nm) 0 and PEDOT-PSS (manufactured by Aldrich) was formed by a spin coating method. Conditions: 2750 rpm, 30 sec. Drying conditions after film formation: At room temperature, firing temperature: 200 ° C, firing time: 10 minutes, and the crystallization peak of ITO was not observed in the firing conditions of this step. [Example 1 T The TDA/1,3-BAPB polyimide film produced in Production Example 1 was used as a substrate, and the ITO produced in the anode film formation step of Comparative Example 1 (b) was subjected to the following conditions. An organic EL device was produced under the same conditions as in Comparative Example 1, except that heat treatment was carried out. <heat treatment conditions> The polyimide substrate having the amorphous ITO film produced in the anode film formation step was placed in a vacuum (continuous exhaust gas under a rotary pump to a pressure of 4 〇 Pa) In the furnace core tube, heat treatment was carried out under the following conditions to crystallize non--25-201101924 crystal IΤ0. Room temperature to 200 ° C (2_3 ° c / min) 200 ° (: ~ 250 ° (: (1.3 ° (: / min) 2 5 0 ° C (1 2 0 min hold) 2 5 0 ° C ~ room temperature (Μ, 、, and natural cooling) The 1 Τ 0 film produced in the above-mentioned Example 1 and Comparative Example 1 was measured and evaluated for crystallization, light transmittance, and conductivity by enthalpy diffraction (CuKα). The X-ray diffraction pattern is as shown in Fig. 1. The UV _ V1 S spectrum (light transmittance) is shown in Fig. 2. As shown in Fig. 1, the amorphous state is shown in the amorphous ITO element produced in Comparative Example 1. (The regular sequence of the lattices) 'but no steep peaks were observed. Only the amorphous mountain peaks unique to the amorphous side were observed on the low angle side, and it is clearly shown that the germanium is amorphous. On the other hand, in the first embodiment The enthalpy diffraction pattern after the heat treatment was observed, and the distinct peaks (2 2 2 ), (400), (440), and (622) inherent to I τ 观测 were observed, which clearly showed that the ΙΤΟ was crystallized. These sheet resistances are about 150 Ω/□ under amorphous ΙΤΟ (before heating) and about 30 Ω / □' under polycrystalline I Τ (after heating) by applying heat Further, as shown in Fig. 2, the average transmittance was 82% on the polyimide substrate and 68% in the amorphous τ0 of Comparative Example 1 'under the polycrystal 1τ of Example 1. It is 5 5 %.

其次將在上述實施例1及比較例1所製作之有機E L元件 的特性使用有機EL發光效率測定裝置(ELI 003 ' PRECISE -26- 201101924 GAUGES (股)製)進行測定並評估這些性肯g 。 [評估結果] (1 )元件之外觀 將在實施例1所製作之元件的亮度測定時之發光樣子 如圖3所示。亮度爲2,000cd/m2。 〇 ( 2 )發光亮度-電壓特性 發光亮度-電壓之關係如圖4所示。在電壓10V下比較 例1之元件的發光亮度爲610cd/m2,實施例1之元件的發光 亮度爲 2,〇〇〇cd/m2。 (3 )電流密度-電壓特性 電流密度-電壓的關係如圖5所示。在電壓1 0V下比較 例1之電流密度爲1 1 mA/cm2,在實施例1之元件的電流密度 〇 爲 7 0m A/cm2。 (4 )發光效率-電流密度特性 發光效率-電流密度之關係如圖6所示。在電流密度 10mA/cm2之比較例1的元件的發光效率爲5.7cd/A ’在實施 例1之元件的發光效率爲4.0cd/A。 又,在電流密度20mA/cm2下比較例1的元件之發光效 率爲4.2cd/A,實施例1的元件中之發光效率爲4.5cd/A。 -27- 201101924 [實施例2 ] 在以下條件下進行加熱處理以外,與實施例1同樣地 使非晶質ITO結晶化,製作出有機EL元件。 室溫至200°C ( 2.3°C/分鐘) 200°C 〜240°C ( 1.3°C/分鐘) 240°C ( 120分保持) 240°C〜室溫(8小時,自然冷卻) 對於上述實施例2所製作之IΤ Ο膜’進行光透過率之測 定•評估。將UV-VIS光譜(光透過率)倂入圖2中表示。 如圖2所示,實施例2的多結晶ITO中,平均透過率爲 8 0%。 其次,將在上述實施例2所製作之有機EL元件的特性 以與上述相同方法進行測定並評估其性能。 [評估結果] (η元件之外觀 將實施例2所製作之元件亮度測定時的發光樣子如圖7 所示。 (2 )發光亮度·電壓特性 發光亮度-電壓之關係如圖8所示。在電壓10V下發光 亮度爲 2,000cd/m2。 (3 )電流密度-電壓特性 -28- 201101924 將電流密度-電壓的關係如圖9所示。在電壓〇. 8〜2 V 間之電流密度約4mA/cm2,在電壓1 0V之電流密度到達約 7 Om A/cm2。 (4 )發光效率-電流密度特性 將發光效率-電流密度之關係如圖1 〇所示。在電流密 度15mA/cm2下,發光效率爲5cd/A。 〇 如以上,使用多結晶IΤ Ο電極的實施例1、2之元件中 ,可實現在電壓10V之2,000cd/m2的高發光亮度、在電壓 10V爲70mA/cm2 (實施例1)或電壓0.8〜2V間約4mA/cm2 (實施例2 )的高電流密度、及在電流密度20mA/cm2之 .4.5cd/A的高發光效率(實施例1 )或在電流密度l5mA/cm2 之5cd/A的高發光效率(實施例2 ),與使用非晶質ITO電 極的比較例1之元件比較其具有優良之各性能,特別最高 發光亮度之2,000cd/m2係爲格外優良之結果。 ❹ 【圖式簡單說明】 [圖1 ]表示以實施例1及比較例1所製作之聚醯亞胺基板 上ITO的X線繞射圖型圖。 [圖2]表示以實施例1、2及比較例1所製作之聚醯亞胺 基板上ITO的光透過率圖。 [圖3]表示以實施例1所製作之有機EL元件的發光時外 ' 觀圖。 [圖4]表示以實施例1及比較例1所製作之有機EL元件 -29- 201101924 的發光亮度-電壓特性圖,其中♦表示實施例1之結果,〇 表示比較例1之結果。 [圖5]表示以實施例1及比較例1所製作之有機EL元件 的電流密度-電壓特性圖’其中籲表示實施例1之結果’〇 比少比較例1之結果。 [圖6]表示以實施例1及比較例1所製作之有機EL元件 的發光效率-電流密度特性圖’其中鲁表示實施例1之結果 ,〇表示比較例1之結果。 [圖7]表示以實施例2所製作之有機EL元件的發光時之 外觀圖。 [圖8]表示以實施例2所製作之有機EL元件的發光亮 度-電壓特性圖。 [圖9]表示以實施例2所製作之有機EL元件的電流密 度-電壓特性圖。 [圖10]表示以實施例2所製作之有機EL元件的發光效 率-電流密度特性圖。 -30-Next, the characteristics of the organic EL elements produced in the above-mentioned Example 1 and Comparative Example 1 were measured using an organic EL luminous efficiency measuring apparatus (ELI 003 ' PRECISE -26-201101924 GAUGES Co., Ltd.), and these properties were evaluated. [Evaluation Result] (1) Appearance of Element The illuminating state when the brightness of the element produced in Example 1 was measured is shown in Fig. 3. The brightness is 2,000 cd/m2. 〇 ( 2 ) Luminance brightness - voltage characteristics Luminous brightness - voltage relationship is shown in Figure 4. The luminance of the element of Comparative Example 1 was 610 cd/m2 at a voltage of 10 V, and the luminance of the element of Example 1 was 2, 〇〇〇cd/m2. (3) Current density-voltage characteristics The relationship between current density and voltage is shown in Fig. 5. The current density of Comparative Example 1 was 1 1 mA/cm 2 at a voltage of 10 V, and the current density 〇 of the element of Example 1 was 70 μm/cm 2 . (4) Luminous efficiency - current density characteristics The relationship between luminous efficiency and current density is shown in Fig. 6. The luminous efficiency of the element of Comparative Example 1 having a current density of 10 mA/cm 2 was 5.7 cd/A'. The luminous efficiency of the element of Example 1 was 4.0 cd/A. Further, the luminous efficiency of the element of Comparative Example 1 at a current density of 20 mA/cm 2 was 4.2 cd/A, and the luminous efficiency in the element of Example 1 was 4.5 cd/A. -27-201101924 [Example 2] An amorphous ITO was crystallized in the same manner as in Example 1 except that the heat treatment was carried out under the following conditions to produce an organic EL device. Room temperature to 200 ° C (2.3 ° C / min) 200 ° C ~ 240 ° C (1.3 ° C / min) 240 ° C (120 min hold) 240 ° C ~ room temperature (8 hours, natural cooling) For the above The I Τ film made in Example 2 was measured and evaluated for light transmittance. The UV-VIS spectrum (light transmittance) is shown in Figure 2. As shown in Fig. 2, in the polycrystalline ITO of Example 2, the average transmittance was 80%. Next, the properties of the organic EL device produced in the above Example 2 were measured and evaluated in the same manner as described above. [Evaluation Result] (Appearance of η Element The illuminating state at the time of measuring the luminance of the element produced in Example 2 is as shown in Fig. 7. (2) Light-emitting luminance, voltage characteristic, luminance, and voltage are as shown in Fig. 8. The luminance at a voltage of 10 V is 2,000 cd/m 2 . (3 ) Current density - voltage characteristic -28 - 201101924 The relationship between current density and voltage is shown in Fig. 9. The current density between voltages 8 8 to 2 V is about 4 mA. /cm2, the current density at a voltage of 10 V reaches about 7 Om A/cm 2 . (4 ) Luminous efficiency - current density characteristic The relationship between luminous efficiency and current density is shown in Fig. 1. At a current density of 15 mA/cm 2 , The luminous efficiency is 5 cd/A. For example, in the elements of Examples 1 and 2 using a polycrystalline I Τ electrode, a high luminance of 2,000 cd/m 2 at a voltage of 10 V can be achieved, and a voltage of 10 V is 70 mA/cm 2 ( Example 1) High current density of about 4 mA/cm 2 (Example 2) between voltages of 0.8 to 2 V, and high luminous efficiency of 4.5 cd/A at a current density of 20 mA/cm 2 (Example 1) or current density High luminous efficiency of 5 cd/A at 15 mA/cm 2 (Example 2), and the element of Comparative Example 1 using an amorphous ITO electrode Compared with the 2,000 cd/m2 which has excellent performance, especially the highest luminous brightness, it is particularly excellent. ❹ [Simplified description of the drawing] [Fig. 1] shows the polyfluorene produced in the first embodiment and the comparative example 1. The X-ray diffraction pattern of ITO on the imide substrate. [Fig. 2] Fig. 2 is a graph showing the light transmittance of ITO on the polyimide substrates prepared in Examples 1 and 2 and Comparative Example 1. [Fig. 3] The light-emitting luminance-voltage characteristic diagram of the organic EL element produced in the first embodiment and the comparative example 1 is shown in Fig. 4, and Fig. 4 is a graph showing the light-emitting luminance-voltage characteristics of the organic EL element -29-201101924 produced in the first embodiment and the comparative example 1. ♦ indicates the result of the first embodiment, and 〇 indicates the result of the comparative example 1. [Fig. 5] shows a current density-voltage characteristic diagram of the organic EL element produced in the first embodiment and the comparative example 1 As a result, the results of Comparative Example 1 were reduced. [Fig. 6] Fig. 6 is a graph showing the luminous efficiency-current density characteristic of the organic EL device produced in Example 1 and Comparative Example 1, wherein Lu indicates the result of Example 1, and 〇 indicates The result of the comparative example 1. [Fig. 7] shows the organic EL element produced in Example 2. [Fig. 8] Fig. 8 is a graph showing the light-emitting luminance-voltage characteristics of the organic EL device produced in Example 2. [Fig. 9] shows the current density-voltage characteristics of the organic EL device fabricated in Example 2. Fig. 10 is a graph showing the luminous efficiency-current density characteristics of the organic EL device produced in Example 2. -30-

Claims (1)

201101924 七、申請專利範圍: 1· 一種影像顯示裝置,其特徵爲至少具備聚醯亞胺薄 膜基板、形成於該基板上的ITO電極所構成,前述ITO電極 爲多結晶ιτο電極,前述聚醯亞胺薄膜含有至少ίο莫耳% 以上的式[1]所示重複單位者; 〇 [化1]201101924 VII. Patent application scope: 1. An image display device comprising at least a polyimide film substrate and an ITO electrode formed on the substrate, wherein the ITO electrode is a polycrystalline ιτο electrode, and the poly The amine film contains at least 重复ο mol % or more of the repeating unit represented by the formula [1]; 〇[Chemical 1] [1] 〜5的烷基、R1、R2及R3各獨立表示氫原子、鹵素原子、 碳數1〜10的烷基、碳數2〜5的鏈烯基、碳數1〜5的烷氧 基、碳數3〜7的環烷基、腈基、或羧基,η表示整數)。 2 _如申請專利範圍第1項之影像顯示裝置,其中前述 聚醯亞胺薄膜含有至少1 0莫耳%以上的式[2 ]所示重複單位[1] The alkyl group of R5, R1, R2 and R3 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, and an alkoxy group having 1 to 5 carbon atoms. A group, a cycloalkyl group having a carbon number of 3 to 7, a nitrile group or a carboxyl group, and η represents an integer). The image display device of claim 1, wherein the polyimine film contains at least 10 mol% of a repeating unit represented by the formula [2] 者; [化2][2] -31 - 1 —種有機電致發光元件,其特徵爲至少具備聚醯亞 胺薄膜基板、與形成於此基板上的IΤ 0電極所構成,前述 2 IT 0電極爲多結晶ΙΤΟ電極,前述聚醯亞胺薄膜爲含有至少 3 10莫耳%以上的式[1]所示重複單位者; 201101924An organic electroluminescence device comprising at least a polyimide film substrate and an I Τ 0 electrode formed on the substrate, wherein the 2 IT 0 electrode is a polycrystalline ruthenium electrode, and the concentrating The quinone imine film is a repeating unit represented by the formula [1] containing at least 3 10 mol% or more; 201101924 (式中,R1及R2各獨立表示氫原子、鹵素原子 '或碳數1 〜5的烷基、R3、R4及R5各獨立表示氫原子、鹵素原子、 碳數1〜10的烷基、碳數2〜5的鏈烯基、碳數1〜5的烷氧 基、碳數3〜7的環烷基、腈基、或羧基’η表示整數)。 4 ·如申請專利範圍第3項之有機電致發光元件’其中 前述聚醯亞胺薄膜爲含有至少10莫耳%以上的式[2]所示重 複單位者; [化4](wherein R1 and R2 each independently represent a hydrogen atom, a halogen atom' or an alkyl group having 1 to 5 carbon atoms, and R3, R4 and R5 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms, and carbon. The alkenyl group of 2 to 5, the alkoxy group having 1 to 5 carbon atoms, the cycloalkyl group having 3 to 7 carbon atoms, the nitrile group, or the carboxyl group 'η represents an integer. 4. The organic electroluminescent device of claim 3, wherein the polyimine film is a repeating unit of the formula [2] containing at least 10 mol% or more; [Chemical 4] -〇— [2] .η (式中,η表示與前述相同意思)。 5 ·如申請專利範圍第3項或第4項之有機電致發光元件 ,其中前述多結晶ΙΤΟ電極上具備以下述順序所層合之電 洞注入層、電洞輸送層、由有機物所成之發光層、電子注 入層及陰極。 6 .如申請專利範圍第5項之有機電致發光元件,其中 前述電洞注入層含有聚(苯乙烯磺酸酯)/聚[2,3-二氫吩 (3,41〇-1,4-戴奧辛),前述電洞輸送層含有雙[N-U-萘 基)-Ν·苯基]聯苯胺,前述由有機物所成之發光層及電子 注入層含有參(8-羥喹啉)鋁,前述陰極爲A1-Li及Α1之層 合電極。 -32- 201101924 7 ·如申請專利範圍第4項至第6項中任一項之有機電致 發光元件’其中前述多結晶ITO電極爲於前述聚醯亞胺薄 膜基板上層合非晶質IΤ Ο膜後,將該非晶質I τ Ο膜經加熱處 理所形成者。 8 .如申請專利範圍第7項之有機電致發光元件,其中 前述加熱處理係在1〇4〜l〇'4Pa之減壓下進行。 9 ·如申請專利範圍第7項或第8項之有機電致發光元件 ❹ ,其中前述加熱處理係在100〜300 °c下進行。 10.如申請專利範圍第9項之有機電致發光元件,前述 加熱處理係在120〜240°C下進行。 1 1 _ 一種如申請專利範圍第5項之有機電致發光元件的 - 製造方法,其特徵爲於前述聚醯亞胺薄膜基板上層合非晶 質ITO膜,將該非晶質ITO膜進行加熱處理製造多結晶ITO 電極後,以電洞注入層、電洞輸送層、由有機物所成之發 光層、電子注入層及陰極的順序進行層合者。 Ο 12.如申請專利範圍第11項之有機電致發光元件的製 造方法’其中將前述加熱處理在l〇4〜1〇-4Pa之減壓下進行 〇 1 3 .如申請專利範圍第項或第i 2項之有機電致發光 兀件的製造方法,其中將前述加熱處理在1〇〇〜3〇〇°c下進 行。 1 4 ·如申請專利範圍第丨3項之有機電致發光元件的製 造方法’其中將前述加熱處理在120〜24〇它下進行。 -33-- 〇 - [2] . η (where η represents the same meaning as described above). 5. The organic electroluminescence device according to claim 3, wherein the polycrystalline germanium electrode has a hole injection layer, a hole transport layer, and an organic material laminated in the following order. A light emitting layer, an electron injecting layer, and a cathode. 6. The organic electroluminescent device according to claim 5, wherein the hole injection layer contains poly(styrenesulfonate)/poly[2,3-dihydrophene (3,41〇-1,4) - Dioxin), the hole transport layer contains bis [NU-naphthyl]-fluorenyl phenyl]benzidine, and the light-emitting layer and the electron injection layer made of the organic substance contain ginseng (8-hydroxyquinoline) aluminum, the aforementioned The cathode is a laminated electrode of A1-Li and Α1. The organic electroluminescent device of any one of the above-mentioned items of the present invention, wherein the polycrystalline ITO electrode is laminated on the polyimine film substrate to form an amorphous IΤ Ο After the film, the amorphous I τ film is formed by heat treatment. 8. The organic electroluminescence device according to claim 7, wherein the heat treatment is performed under a reduced pressure of 1〇4 to 1〇4Pa. 9. The organic electroluminescent device according to claim 7 or 8, wherein the heat treatment is carried out at 100 to 300 °C. 10. The organic electroluminescence device according to claim 9, wherein the heat treatment is carried out at 120 to 240 °C. 1 1 _ A method for producing an organic electroluminescence device according to claim 5, characterized in that an amorphous ITO film is laminated on the polyimide film substrate, and the amorphous ITO film is heat-treated After the polycrystalline ITO electrode is produced, the laminate is laminated in the order of the hole injection layer, the hole transport layer, the light-emitting layer made of the organic material, the electron injection layer, and the cathode. Ο 12. The method for producing an organic electroluminescence device according to claim 11, wherein the heat treatment is carried out under a reduced pressure of 10 to 4 Å to 4 Pa, as described in the patent application. The method for producing an organic electroluminescence element according to item i, wherein the heat treatment is performed at 1 〇〇 to 3 〇〇 ° c. A method of producing an organic electroluminescence device according to claim 3, wherein the heat treatment is carried out at 120 to 24 Torr. -33-
TW099104784A 2009-02-13 2010-02-12 An image display device and an organic electroluminescent element TWI501696B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009031178 2009-02-13

Publications (2)

Publication Number Publication Date
TW201101924A true TW201101924A (en) 2011-01-01
TWI501696B TWI501696B (en) 2015-09-21

Family

ID=42561853

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099104784A TWI501696B (en) 2009-02-13 2010-02-12 An image display device and an organic electroluminescent element

Country Status (5)

Country Link
JP (1) JP5682956B2 (en)
KR (1) KR101740947B1 (en)
CN (1) CN102273318B (en)
TW (1) TWI501696B (en)
WO (1) WO2010093013A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101903679B1 (en) 2012-02-08 2018-10-04 삼성디스플레이 주식회사 Organic light emitting diode display
KR102094729B1 (en) * 2012-09-27 2020-03-30 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 Display device production method
US9871228B2 (en) * 2012-11-30 2018-01-16 Lg Display Co., Ltd. Organic light emitting device comprising flexible substrate and method for preparing thereof
JP6378154B2 (en) 2015-10-08 2018-08-22 双葉電子工業株式会社 Organic EL display device
EP3660109B1 (en) * 2017-07-28 2023-12-27 Sumitomo Chemical Company Limited Ink composition, film, and display

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3586906B2 (en) * 1994-12-14 2004-11-10 凸版印刷株式会社 Method for manufacturing transparent conductive film
JP2002352956A (en) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp Thin-film light emitting substance and manufacturing method therefor
TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP2006318837A (en) * 2005-05-16 2006-11-24 Hitachi Displays Ltd Organic electroluminescent element and organic electroluminescent device
JP4961726B2 (en) * 2005-11-24 2012-06-27 新日本理化株式会社 Polyimide precursor and polyimide, and polyimide-based plastic substrate and method for producing the same.
WO2008072916A1 (en) * 2006-12-15 2008-06-19 Kolon Industries, Inc. Polyimide film
KR101167483B1 (en) * 2006-12-15 2012-07-27 코오롱인더스트리 주식회사 Colorless polyimide resin, and liquid crystal alignment layer and polyimide film using the same
US7947981B2 (en) * 2007-01-30 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2008231327A (en) * 2007-03-22 2008-10-02 Ihara Chem Ind Co Ltd Polyimide having high transparency and its manufacturing method
CN103319540B (en) * 2007-05-18 2016-01-13 株式会社半导体能源研究所 Organometallic complex, comprises composition and the luminous element of this organometallic complex
JP2008297362A (en) * 2007-05-29 2008-12-11 Mitsubishi Chemicals Corp Ester group-containing tetracarboxylic acid dianhydride, polyimide having high toughness, and its precursor

Also Published As

Publication number Publication date
CN102273318B (en) 2015-03-04
KR20110115123A (en) 2011-10-20
CN102273318A (en) 2011-12-07
JP5682956B2 (en) 2015-03-11
KR101740947B1 (en) 2017-05-29
JPWO2010093013A1 (en) 2012-08-16
TWI501696B (en) 2015-09-21
WO2010093013A1 (en) 2010-08-19

Similar Documents

Publication Publication Date Title
TWI808096B (en) Low-color polymers for use in electronic devices
TWI431077B (en) Charge transport varnish containing charge transport polymer and organic electroluminescent device using the same
CN1954031B (en) Charge-transporting varnish and organic electroluminescent device using same
CN110892003B (en) Low color polymers for flexible substrates in electronic devices
KR100788335B1 (en) Electroluminescence element
WO2017002663A1 (en) Polyimide film, organic electroluminescent element, transparent conductive laminate, touch panel, solar cell, and display device
JP2001023778A (en) Electroluminescent element having organic thin film layer containing polyimide
CN112424204B (en) Polymer for use in electronic devices
CN111032738A (en) Low color polymers for flexible substrates in electronic devices
TWI501696B (en) An image display device and an organic electroluminescent element
TWI843741B (en) Polymers for use in electronic devices
WO2016133019A1 (en) Polyimide film, organic electroluminescent element using same and organic electroluminescent display
Hsu et al. Electroluminescence and electron transport characteristics of aromatic polyimides containing 1, 3, 4-oxadiazole moiety
CN112513141B (en) Polymer for use in electronic devices
JP2016134374A (en) Substrate for transparent electrode lamination and organic electroluminescent element using the same
JP2016132103A (en) Laminate for substrate, substrate, production method of substrate, and organic electroluminescence element
JP7491902B2 (en) Polymers for use in electronic devices
TWI832882B (en) Polymers for use in electronic devices
JP5741884B2 (en) Image display device and flexible transparent organic electroluminescence element