201101524 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種太陽能電池之電極製造設備，特 別是指一種於一玻璃基板上鍍上透明導電材料並蝕刻出預 定外型之太陽能電池之電極製造設備。 【先前技術】 一般的太陽能電池之電極製造設備包含：依序連接之 一真空濺鍍裝置及一蝕刻裝置。其主要功用是在於一玻璃 基板上濺鍍上一層導電材料後，送入蝕刻裝置中以蝕刻該 導電材料。 上述真空濺鑛裝置中完全是於保持真空狀態下進行電 極製作的作業，且玻璃基板一進入真空濺鍍裝置後首先需 經過加溫程序，以使所述玻璃基板達到一預定之溫度，再 予以濺鍍、熱處理與冷卻。 目前一般之玻璃基板厚度約為0.5〜l lmm，為因應市 %需求玻璃基板的尺寸範圍越來越大，厚度範圍也越來 越大，甚至厚度高it 6mm，所以如果直接將大尺寸與較厚 之玻璃基板送入真空狀態並予以執行加溫程序時，容易因 瞬間溫度過高或加熱不平均等因素造成玻璃基板内部溫度 不平均，且因熱漲冷縮不均勻而使玻璃基板產生裂痕，造 成不良率過高的問題。 【發明内容】 因此，本發明之目的即在提供一種可以避免製程中因 溫度不平均造成玻璃基板產生裂痕，提高生產良率的太陽 201101524 能電池之電極製造設備。 於是，本發明太陽能電池 璃基板上成形一電極，太陽能 依序連接之一常壓預熱裝置、 置’及一姓刻裝置。 之電極製造設備適用於一玻 電池之電極製造設備包含： —真空濺鍍裝置、一持溫裝 該常壓預熱裝置具有-内部維持—大氣壓力的預熱腔 室’及-裝設於該預熱腔室中並輸出熱量的加熱件。該真 空滅鑛裝置㈣維持於真空狀態並進行加溫、雜，以於 所述玻璃基板表面麟上-層透明導電材料。該持溫裝置 接收鑛上透明導電㈣之基板，並保持—預定溫度。該敍 刻裝置蝕刻該基板上之透明導電材料。 本發明之功效在於利用設置於真空濺鍍裝置之前的常 壓預熱裝置’使玻璃基板於常壓狀態下先預熱升溫，避免 玻璃基板進入真空濺鍍裝置中時，瞬間高溫或受熱不均造 成裂痕，提高生產良率。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中將可 清楚的呈現。 參閱圖1、圖2與圖3，本發明太陽能電池之電極製造 設備適用於一玻璃基板2上成形一預定外型之電極，太陽 能電池之電極製造設備包含：依序連接之—常壓預熱裝置4 、一真空濺鍍裝置5、一持溫裝置6、一蝕刻裝置7,及一 載運玻璃基板2進行各項製程之承載座3。需先說明的是， 201101524 本=施例中，相關抽取腔室内氣體與供應原料之管路及設 備白非本發明之特徵’故於相關圖式中，上述管路與設備 皆予以省略’以求簡化圖式，使圖式易於瞭解。201101524 VI. Description of the Invention: [Technical Field] The present invention relates to an electrode manufacturing apparatus for a solar cell, and more particularly to a solar cell in which a transparent conductive material is plated on a glass substrate and a predetermined outer shape is etched. Electrode manufacturing equipment. [Prior Art] A general solar cell electrode manufacturing apparatus includes a vacuum sputtering apparatus and an etching apparatus which are sequentially connected. Its main function is to sputter a conductive material on a glass substrate and then feed it into an etching device to etch the conductive material. In the above vacuum sputtering device, the electrode fabrication operation is completely performed under the vacuum state, and after the glass substrate enters the vacuum sputtering device, the heating process is first performed to bring the glass substrate to a predetermined temperature, and then Sputtering, heat treatment and cooling. At present, the thickness of the general glass substrate is about 0.5~1 lmm. In view of the increasing demand of the glass substrate, the size range of the glass substrate is getting larger and larger, and the thickness range is also larger and larger, even the thickness is 6 mm, so if the size is directly larger than When the thick glass substrate is sent to a vacuum state and the heating program is performed, it is easy to cause uneven temperature inside the glass substrate due to excessive temperature or uneven heating, and the glass substrate is cracked due to uneven heat and shrinkage. , causing problems of excessive non-performing rates. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an electrode manufacturing apparatus for a solar cell 201101524 capable of avoiding cracks in a glass substrate due to temperature unevenness in the process and improving production yield. Thus, an electrode is formed on the solar cell substrate of the present invention, and the solar energy is sequentially connected to a normal pressure preheating device, a device and a device. The electrode manufacturing apparatus is suitable for a glass cell electrode manufacturing apparatus comprising: a vacuum sputtering device, a temperature holding device, the atmospheric pressure preheating device having an internal maintenance-atmospheric pressure preheating chamber and - mounted thereon A heating element that preheats the chamber and outputs heat. The vacuum ore killing device (4) is maintained in a vacuum state and is heated and mixed to form a layer-layer transparent conductive material on the surface of the glass substrate. The temperature holding device receives the substrate of the transparent conductive (4) on the ore and maintains a predetermined temperature. The etching device etches the transparent conductive material on the substrate. The utility model has the advantages that the glass substrate is preheated and heated in a normal pressure state by using an atmospheric pressure preheating device disposed before the vacuum sputtering device to prevent an instantaneous high temperature or uneven heating when the glass substrate enters the vacuum sputtering device. Cause cracks and increase production yield. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 1 , FIG. 2 and FIG. 3 , the electrode manufacturing device for a solar cell of the present invention is suitable for forming a predetermined shape electrode on a glass substrate 2 , and the electrode manufacturing device for the solar cell comprises: sequentially connecting the atmospheric pressure preheating The device 4, a vacuum sputtering device 5, a temperature holding device 6, an etching device 7, and a carrier 3 carrying the glass substrate 2 for performing various processes. It should be noted that, 201101524, in the example, the relevant pipelines and equipment for extracting the chamber gas and supplying raw materials are not the features of the present invention. Therefore, in the related drawings, the above pipelines and equipment are omitted. Find a simplified schema to make the schema easy to understand.
該常壓預熱裝置4具有-隔熱外壁41、一由該隔熱外 壁41所界定出的預熱腔室42、—形成於該隔熱外壁η 一 側面之輸送孔43、—形成於該隔熱外壁41另―側面之輸入 孔46、-裝設於該預熱腔室42中並輸出—定;力率熱量的加 熱件44 一連通輸送孔43並與該真空⑽裝置$連通之輸 送管道45，及一蓋設於該輸入孔46上之蓋門47。 該f壓預㈣置4之預熱腔室42内部是始終維持一大 氣壓力’且該加熱件44維持-定輸出熱量，使用者可依據 所述玻璃基板2之厚度，控制加熱件44之輸出功率，以調 整所述玻璃基板2於預熱腔室42中之時間，致使該玻璃基 板2可均句地受熱升溫達到最終之溫度。上述升溫過程中 之玻璃基板2之最終溫度可依該真空濺鑛裝置5之溫度需 求而定，於此不提供詳細溫度數據做說明。 該真空濺鑛裝置5内部是維持於真空狀態，並具有依 序排列之-加溫單元51、-濺鑛單元52、一熱處理單元^ 濺鍍、熱處理與冷卻， 面濺鑛上一層透明導電 ，及一冷卻單元54，以進行加溫、 主要目的就是於所述玻璃基板2表 材料。 該加溫單元51具有三個真空加溫箱5ιι、多數設置於 真空加溫箱511間與該輸送管道45眙w„ Έ遇45臨界處之氣密閥門514 ，及多數設置於真空加溫箱511中之 甲之加溫件515。本實施例 201101524 中每-真空加溫箱511内界定出一個真空加溫室5i2，且該 真空濺鍍裝置5可依製程而增減真空加溫室512之數量。 鄰近常壓預熱裝置4之真空加溫箱511的—側邊上形成 -與該常壓預熱裝置4之輸送管道45相連通的入口孔513 ’該氣密閥門514是設置於真空加溫室512外並與輸送管 道45結合，以達到可氣密封閉輸送管道45之功能。 該雜單元52主要是於該玻璃基板2表^上一層透 明導電材料，本實施射是將透料電材質軸於該玻璃 基板2之表面，上述透明導電材f如氧化銦錫、氧化麵辞 、氧化鋅、銘氧化辞等材質。另外本實施例於圖式中是以 「個濺鑛之腔室為例做說明，但實際實施時可依需求增加 減鑛之腔至，實施範圍不以賤鑛之腔室數量為限。該熱處 理單元53是以適當之溫度使鑛上之透明導電材料組織重整 而更細腻，該冷卻單元54是詩逐步降溫，上述之滅鑛單 元52、熱處理單元53及冷卻單元M非本發明之特徵以 下不再對其構造詳細說明。 該持溫裝置6具有一内部維持常壓之持溫室Μ，及一 設置於持溫室61中之加熱器62。該加熱器62輸出一定之 熱量使該持溫室61中維持約6G〜7Gt，鑛上透明導電材料 之基板2通常溫度較尚，玻璃基板2進入持溫室a〗中於常 壓環境下降至上述之預定溫度，避免上述玻璃基板2因厚 _厚或尺寸較大，且環境溫度瞬間降至室溫而造成散熱 不平均的問題’防止玻璃基2因冷熱膨脹不平衡造成的 裂痕瑕H也就是說，該持溫裝置6也是利用常壓環境 201101524 供該玻璃基板2緩慢降溫，避免_溫 該蝕刻裝置7將Α拓,l ° 清洗等製程，使上«” 電㈣經過餘刻及 „aL , 導電材枓上形成凹凸不平榦+主 面外f上述透明導電材料作為太陽能電池 ，凹凸不平整之表面可降低 ·夺 。該餘刻裝置7非本發明之提高光源之吸收 多做說明。^…特徵，以下不再對其詳細構造 ❹ Ο 遠承載座3 ±衫料料柄練2，並纟 熱裝置4之㈣腔室42巾輸送玻璃基板2至該真^鍛裝 置5、持溫裝置6及_裝置7中，本實施例是以驅動滾輪 的方式推動該承餘3運載玻璃基板2運動，以進行後續 減鍍、姓刻之製程，但實施時亦可用輸送帶或滚輪等裝置 直接輸送玻璃基板2,且該承餘3非本發明之特徵以;就 不再詳細說明，實施範圍也不以承載座3型式與驅動方式 為限。 使用時，是先將所述玻璃基板2經由該輸入孔46進入 預熱腔室42，並關上蓋門47，利用該加熱件44輪出之熱 能對所述玻璃基板2加熱，直到玻璃基板2之溫度達到最 終溫度，本實施例中是以關上蓋門47 ’使該預熱腔室42與 常溫環境隔絕的方式進行預熱，但實際實施時亦可不關上 蓋門47’以方便將玻璃基板2連續輸送進入預熱腔室42。 玻璃基板2之溫度達到最終溫度後才開啟該真空濺鍍裝置5 之氣密閥門514,並以驅動滚輪方式驅動承載座3經由輸送 管道45進入真空加溫箱5 11中’並封蓋該氣密閥門514， 201101524 同時將真空加溫室512抽為真空狀態，再以該加溫件515 繼續對所述玻璃基板2加熱，以及進行後續之濺鍍、蝕刻 等製程，後續濺鍍、蝕刻等製程是一般半導體產業中常見 之製程，以下不再贅述。 藉此’當所述玻璃基板2於進入該真空滅鑛裝置$之 前，先進入常壓預熱裝置4之預熱腔室42中加熱，且由於 於常壓環境中具有輻射之效用，再加上該加熱件44是以一 定之輸出功率輸出熱量對所述玻璃基板2加熱，可讓所述 玻璃基板2均勻受熱而升高至預定之溫度，使所述玻璃基 板2進入真空加溫箱511中時，避免玻璃基板2因瞬間溫度 改變過高導致受熱不平均與產生裂痕的問題。同理，當所 述玻璃基板2經過該真空濺鍍裝置5濺鍍、熱處理與冷卻 之後，亦先進入該持溫裝置6之持溫室61中，利用常壓環 境供該玻璃基板2緩慢降溫，避免瞬間溫差造成瑕疵，提 高本發明太陽能電池之電極製造設備之生產良率。 综上所述，本發明太陽能電池之電極製造設備利用設 置於真空濺鍍裝置5之前的常壓預熱裝置4與真空濺鍍裝 置5後之持溫裝置6,使玻璃基板2於常壓狀態下先預熱升 溫及緩慢降溫，避免玻璃基板2進出真空濺鍍裝置5時， 瞬間環境溫差過大而造成裂痕，提高生產良率，故確實能 達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 月色以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 201101524 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是本發明太陽能電池之電極製造設備 啊 < 較佳實雜 例的正面視圖； 圖2是該較佳實施例的一常壓預熱裝置與一真空濺鍍 裝置的部分正面剖視圖；及 圖3是該較佳實施例的一持溫裝置的部分正面剖視圖 0 ΟThe atmospheric pressure preheating device 4 has a heat insulating outer wall 41, a preheating chamber 42 defined by the heat insulating outer wall 41, and a conveying hole 43 formed on a side surface of the heat insulating outer wall η. The other side of the heat insulating outer wall 41 is mounted in the preheating chamber 42 and is outputted. The heating element 44 of the heat rate is connected to the conveying hole 43 and is connected to the vacuum (10) device. The pipe 45 and a cover door 47 are disposed on the input hole 46. The inside of the preheating chamber 42 of the f pressure pre-four (4) is always maintained at an atmospheric pressure 'and the heating member 44 maintains a constant output heat, and the user can control the output of the heating member 44 according to the thickness of the glass substrate 2. The power is adjusted to adjust the time of the glass substrate 2 in the preheating chamber 42, so that the glass substrate 2 can be uniformly heated up to the final temperature. The final temperature of the glass substrate 2 during the above temperature rise may be determined by the temperature requirements of the vacuum sputtering apparatus 5, and detailed temperature data is not provided for explanation. The vacuum sputtering device 5 is internally maintained in a vacuum state and has sequential arrangement - a heating unit 51, a sputtering unit 52, a heat treatment unit, sputtering, heat treatment and cooling, and a transparent conductive layer on the surface splashing. And a cooling unit 54 for heating, the main purpose is to the surface material of the glass substrate 2. The heating unit 51 has three vacuum heating boxes 5 ιι, a plurality of airtight valves 514 disposed between the vacuum heating tanks 511 and the conveying pipe 45 眙 w Έ 45 45 critical points, and most of them are arranged in the vacuum heating box A heating member 515 of 511. In this embodiment 201101524, a vacuum adding greenhouse 5i2 is defined in each vacuum heating box 511, and the vacuum sputtering device 5 can increase or decrease the vacuum plus the greenhouse 512 according to the process. The number of the inlets 513 of the vacuum heating tank 511 adjacent to the atmospheric pressure preheating device 4 is connected to the conveying pipe 45 of the atmospheric pressure preheating device 4, and the airtight valve 514 is disposed at The vacuum is added to the outside of the greenhouse 512 and combined with the conveying pipe 45 to achieve the function of the gas sealable conveying pipe 45. The hybrid unit 52 is mainly a layer of transparent conductive material on the glass substrate 2, and the implementation is transparent. The material of the material is on the surface of the glass substrate 2, and the transparent conductive material f is made of indium tin oxide, oxidized surface, zinc oxide, oxidized, etc. In addition, the embodiment is in the figure of "spraying" The chamber is taken as an example, but it can be implemented according to the requirements. Adding or reducing the cavity of the mine until the implementation range is not limited to the number of chambers of the antimony ore. The heat treatment unit 53 is more delicate to reform the transparent conductive material on the ore at a suitable temperature, and the cooling unit 54 is a poem step by step. The temperature of the above-mentioned ore-exchanging unit 52, the heat-treating unit 53 and the cooling unit M are not described in detail below. The temperature-holding device 6 has an internal greenhouse maintained at normal pressure, and a Holding the heater 62 in the greenhouse 61. The heater 62 outputs a certain amount of heat to maintain about 6 G~7 Gt in the holding greenhouse 61. The substrate 2 of the transparent conductive material on the ore is usually at a higher temperature, and the glass substrate 2 enters the greenhouse. In the normal pressure environment, the temperature is lowered to the predetermined temperature to avoid the problem that the glass substrate 2 is thick or thick, and the ambient temperature is instantaneously lowered to room temperature, thereby causing uneven heat dissipation. The crack caused by the balance 也就是说H means that the temperature holding device 6 also uses the normal pressure environment 201101524 for the glass substrate 2 to slowly cool down, avoiding the temperature of the etching device 7 to be Α, l ° cleaning, etc. On the «« electric (4) after the engraving and „aL, the conductive material is formed on the 枓 凹凸 + + + main surface outside f the above transparent conductive material as a solar cell, the surface of the uneven surface can be reduced and won. The remaining device 7 is not The invention improves the absorption of the light source, and the description is made. The feature is not detailed in the following. 远 远 far bearing seat 3 ± woven material handle 2, and 4 (4) chamber 42 of the heat device 4 to transport the glass substrate 2 In the true forging device 5, the temperature holding device 6 and the device 7, the embodiment is to drive the roller 3 to carry the movement of the glass substrate 2 in a manner of driving the roller to perform the subsequent plating and the process of surname cutting, but In the implementation, the glass substrate 2 can be directly transported by a device such as a conveyor belt or a roller, and the residual member 3 is not characterized by the present invention; the detailed description is not repeated, and the implementation range is not limited to the type of the carrier 3 and the driving method. In use, the glass substrate 2 is first introduced into the preheating chamber 42 via the input hole 46, and the cover door 47 is closed, and the glass substrate 2 is heated by the heat energy of the heating member 44 until the glass substrate 2 is heated. The temperature reaches the final temperature. In this embodiment, the preheating chamber 42 is preheated by closing the door 47' from the normal temperature environment, but in practice, the door 47' may not be closed to facilitate the glass substrate. 2 Continuously conveyed into the preheating chamber 42. After the temperature of the glass substrate 2 reaches the final temperature, the airtight valve 514 of the vacuum sputtering device 5 is opened, and the carrier 3 is driven to enter the vacuum heating box 5 11 via the conveying pipe 45 and the gas is sealed. The dense valve 514, 201101524 simultaneously draws the vacuum adding greenhouse 512 into a vacuum state, and then continues heating the glass substrate 2 with the heating member 515, and performs subsequent sputtering, etching, etc., subsequent sputtering, etching, etc. The process is a common process in the general semiconductor industry, and will not be described below. Thereby, when the glass substrate 2 enters the vacuum ore killing device $, it first enters the preheating chamber 42 of the atmospheric pressure preheating device 4 for heating, and because of the effect of radiation in the atmospheric environment, The heating element 44 heats the glass substrate 2 with a certain output power output heat, and the glass substrate 2 is heated uniformly to a predetermined temperature, so that the glass substrate 2 enters the vacuum heating box 511. In the middle, the problem that the glass substrate 2 is unevenly heated and cracked due to an excessive temperature change is avoided. Similarly, after the glass substrate 2 is sputtered, heat treated and cooled by the vacuum sputtering device 5, it is first entered into the holding chamber 61 of the temperature holding device 6, and the glass substrate 2 is slowly cooled by the atmospheric environment. The instantaneous temperature difference is avoided to cause defects, and the production yield of the electrode manufacturing equipment of the solar cell of the present invention is improved. In summary, the electrode manufacturing apparatus of the solar cell of the present invention uses the atmospheric pressure preheating device 4 disposed before the vacuum sputtering device 5 and the temperature holding device 6 after the vacuum sputtering device 5 to make the glass substrate 2 in a normal pressure state. The temperature is raised by the preheating and the temperature is slowly lowered to prevent the glass substrate 2 from entering and exiting the vacuum sputtering apparatus 5, and the temperature difference in the transient environment is too large to cause cracks, thereby improving the production yield, so that the object of the present invention can be achieved. However, the above is only a preferred embodiment of the present invention, and when it is not moonlight, the scope of the present invention is limited, that is, the simple equivalent change of the patent application scope and the description of the invention is Modifications are still within the scope of the invention patent 201101524. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view of a preferred embodiment of an electrode manufacturing apparatus for a solar cell of the present invention; FIG. 2 is an atmospheric pressure preheating apparatus and a vacuum sputtering apparatus of the preferred embodiment. Partial front cross-sectional view of FIG. 3; and FIG. 3 is a partial front cross-sectional view of a temperature holding device of the preferred embodiment.
9 201101524 【主要元件符號說明】 2 玻璃基板 511 真空加溫箱 3 承載座 512 真空加溫室 4 常壓預熱裝置 513 入口孔 41 隔熱外壁 514 氣密閥門 42 預熱腔室 515 加溫件 43 輸送孔 52 濺鍍單元 44 加熱件 53 熱處理單元 45 輸送管道 54 冷卻單元 46 輸入孔 6 持溫裝置 47 蓋門 61 持溫室 5 真空濺鏟裝置 62 加熱器 51 加溫單元 7 蝕刻裝置 109 201101524 [Explanation of main components] 2 Glass substrate 511 Vacuum heating box 3 Carrier 512 Vacuum plus greenhouse 4 Normal pressure preheating device 513 Entrance hole 41 Insulation outer wall 514 Airtight valve 42 Preheating chamber 515 Heating parts 43 Delivery hole 52 Sputtering unit 44 Heating element 53 Heat treatment unit 45 Conveying pipe 54 Cooling unit 46 Input hole 6 Temperature holding device 47 Door 61 Holding the greenhouse 5 Vacuum shovel device 62 Heater 51 Heating unit 7 Etching device 10