TW201101364A - System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes - Google Patents

Abstract

An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementary aperture located downstream of the mass analyzer and along the beam path, the beam complementary aperture having a size and shape corresponding to a cross-sectional beam envelope of the ion beam.

Description

201101364 VI. INSTRUCTIONS OF THE INVENTION: FIELD OF THE INVENTION The present invention relates generally to ion implantation systems and, more particularly, to matching the beam defining aperture size of ion implantation systems to ion beam shape to reduce particle and contamination. A system and method.

L 兀刖孜 J 于 于 In the manufacture of semiconductor components, ion implantation uses wafers and/or workpieces with impurities or dopants. The ion beam implanter utilizes an ion beam to process the stone workpiece to produce a U p type outer 2 material or a passivation layer during fabrication of the integrated circuit. When used to dope a semiconductor, the ion beam implants the selected external ion species to produce the desired semiconductor material. A workpiece produced from a source material such as germanium, arsenic or phosphorus that causes an "n-type" separation and a right-looking "?" exogenous material, typically ions from a source material such as ng or gallium. , = implanted non-doped applications, which can benefit ion beams such as gas. A crack in a non-doped application, which can be established by embedding a buried layer of chlorine: removing the top layer of the layer for the roundness, and picking up the layer of the layer for the subsequent heat. The oxygen production ion implantation system has a unique implant. - Above: Most of the implanters implemented by the implanter have higher energy, so as to produce -... the current dose requirement from d is compared to the "ion/square fill depth of the implant layer. Secondly, /wv 10 ions / square centimeter to lxl 〇 1? A range of typical implants of the knife is a sub-division / a thousand squares to support the full production of 5 201101364 3 〇 mA to 60 mA, high dose requirements The implant system operates, for example, at a beam current. The ion implantation apparatus for semiconductor processing of Dessert 1^1 T LJ-Θ is required for the mass selectivity of the element, whereby the implant assists the 矽 = π The type of g in the period m to the workpiece J. Reduces the degree of contamination caused by other elements. 皙眚 搂 4 + 选择性 选择性 selectivity through the use of electromagnets to bend the charged ion beam and then through a mass selection Analyze the hole and achieve it. Together with the beam enveloping (envelGpe) and the electromagnet, the ruler of the hole is solved.

The inch and shape also determine the ion analysis ability of the ion-enhanced 51 4 4 I 卞 植 植 植 植. The size and shape of the hole affects the location where the ion strikes, and the quality resolution and cross-section encapsulation of the selected surface. A typical high current implanter with a horizontal dispersion plane is designed as a rectangular analytical aperture having a non-uniform 该. Associated with the mass analysis electromagnet, the width of the hole is typically defined to define the mass resolution of the system and the height of the hole is only the maximum height of the beam defined by the workpiece target. The system can be designed to have additional beam forming or forming holes upstream or downstream of the analytical aperture that define the final dimensions of the ion beam of the guard. These holes are typically caused by the uneven passage of the beam as the beam passes through the opening. Accordingly, a need exists for an improved system and method for defining the shape of a hole in an ion implantation system that defines the shape of the hole to match the shape of the ion beam to reduce particle and contamination. SUMMARY OF THE INVENTION A simplified overview of the present invention is set forth below to provide a basic understanding of the teachings of the present invention. This summary is not an extensive overview of the invention, and is not intended to identify key or critical elements of the invention, and is not intended to limit the scope of the invention. Rather, the <Desc/Clms Page number>>> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; In accordance with the teachings of the present invention, an ion implantation system includes an ion source mounted to generate an ion beam along a beam path. A mass 〇 * The analyzer is located downstream of the ion source. Ten, the mass analyzer is installed to perform mass analysis of the ion beam. The beam complementary aperture is located downstream of the analyzer and along the beam path, wherein the beam complementary aperture eight has a size and shape corresponding to the cross-sectional beam envelope of the ion beam. In other words, the beam complementary aperture corresponds to the beam cross section to match the beam cross section; wherein the plane of the beam complementary aperture is perpendicular to the ion beam path axis. According to another aspect of the invention, the fused _^n-ion source is installed to produce (4) (4) systems comprising: Ο 乂 乂 / 口 口 口 口 口 口 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : Installed in the mass = the: the electronic overflow group downstream of the analyzer, and includes, the assembly component is filled with / a beam to fill the hole. The shot is separated from each other, / the distance is the branch of the parsing hole and at least one swim, wherein : = :: the parsing hole is below the mass analyzer member. The hole below the parsing hole along the beam path has a corresponding cross-sectional bread seal at the complementary beam of the two beams from one of the ion beams. A size and shape. 7 201101364 In accordance with yet another aspect of the present invention, a method of matching beam complementary pores to - ion beam cross-sectional size and shape to reduce particle and contamination is provided. The method comprises: (a) selecting The ion beam source parameter; (b) selects the mass kerometer parameter 'which includes the field strength; 丨 (C) selects an analytical hole position. Thereafter, the method comprises: (4) determining that the complementary hole in the beam will be positioned Cross section of the ion beam The position of the seal; (〇 fabricating a complementary ion beam of the transversely sealed beam of the envelope and setting the complementary hole of the beam, (7) measuring the critical ion beam factor; if the critical ion beam factor of the measurement is not acceptable, return </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The invention is described with reference to the drawings, wherein like reference numerals are used to refer to the like elements in the drawings, and A system and method for matching beam complementary holes with actual measured/determined ion beam shapes to reduce particle and contamination. The replacement beam complementary holes correspond to a beam cross-sectional bread seal or substantially a mating two-path axis. The plane of the beam complementary aperture dog is perpendicular to the ion beam. Returning now to Figure b, an ion implantation system 100 in accordance with one aspect of the present invention is shown for an example. Processing of the device. System 100 201101364 utilizes a beam of complementary apertures 133 and is presented for illustrative purposes, it being understood that the aspects of the present invention are not limited to the ion implantation system described above, but may be applied to other suitable variations. A configured ion implantation system. It should be understood that in this embodiment, the beam complementary aperture 133 is attached to an analytical aperture 132.

The ion implantation system 100 is operable to reciprocally scan a workpiece 102 (eg, a semiconductor substrate, a wafer, and the like) with respect to an ion beam, for implanting ions to the workpiece 102. For example, an ion implantation system _ Further controlled by the control 3 150 'where the functionality of the ion implantation system and a workpiece scanning system 138 is controlled via the controller 150. As described above, various aspects of the invention may be associated with any type of ion implantation The device is implemented, including but not limited to the exemplary system (10) of the figure. The non-standard ion implantation system 100 comprises: a terminal 1〇6, a beam assembly (10) and an end station that generally forms a processing tU2&quot; In the basin, the ion beam (10) is generally directed to the work #1〇2 positioned at a workpiece location 114. An ion source for the self-ionizable source material at the terminal 106 to generate positively charged ions is supplied by a power source. The source 118 provides a removed ion beam 120 to the beam assembly 1 8 , wherein the ion source ι 6 includes one or more extraction electrodes 122 to extract ions from the source chamber and thereby direct the removal Departure The beam is directed toward the beamline assembly 1 〇 8. To generate ions, one of the dopant gases (not shown) to be ionized is positioned within the peak of the ion source 116 &amp; ^ ^ _ housing. And §, the doping gas can be fed into the chamber from a gas source (not shown). In addition to the power supply ιΐ8, it will be understood that any number of suitable mechanisms (none shown) can be used to excite the ions. Generating free electrons within the chamber, such as: RF ("9 201101364 or microwave excitation source, electron beam injection source, electromagnetic source, and/or a cathode source, for example, 'establishing an arc discharge within the chamber. Excitation The electrons collide with the dopant gas molecules and thus generate ions. In general, positive ions are generated, although the disclosure herein can also be applied to generate negative ions within the system. For example, the beam assembly 丨〇8 includes one The inlet 126 is connected to a beam guide 124 of an outlet 128 adjacent to the source 116, and the outlet 128 is adjacent to an analytical aperture assembly 135 within the end station. The analytical aperture assembly 135 can include a plasma electron. overflow (not shown). The plasma electrons overflow from the ion beam to produce neutralized electrons in one of the regions and will be detailed in the associated subsequent pattern. The ion beam implant system i can include extensions to A beam forming and forming structure between the ion source 116 and the end station of the implant system 。1〇. The beam forming and forming structure of the analytical hole assembly 135 maintains the ion beam 104 and defines the beam 1〇4 on the way Through it to the end of the implant system 4 U0 - the elongated internal cavity or channel. When operating the Emperor's first 100 channels can be vacuumed to reduce the probability of ions deflecting from the predetermined beam path due to collision with gas molecules In one example, the beam guide 124 includes a mass analyzer 130 (e.g., a mass analysis magnet) that receives the ion beam 120 from the source and establishes a bipolar magnetic field so that only the proper one is! The ions of the Bellow ratio or range pass through an analytical hole i 32 to the workpiece analytic hole 132 in various beam shapes associated with the beamline assembly 1 〇 8: upstream of the shaped structure (not shown), and when the ion ray I 104 is transported to the workpiece 1 along the desired beam path #136 to maintain and define the ion beam 1〇4. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , For example, the component sweep also includes the "serial "erial"" type of end station 110 can be "the end of the main eight", which: at == the workpiece: mechanical · where, the piece scanning system or other The workpiece is mechanically translated through the beam path 136 via a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The desired ion beam 134 (eg, also known as a first spot beam) or "pen beam system is usually associated with stationary: the end station of the workpiece scan can be used instead, the /::, in the basin is: Batches or other types of erections 102 can be scanned simultaneously, and the end stations are expected to belong to the present example, the system _ can contain a static. The other can be operated along the relative to the workpiece (not Shown), its ion beam 104. Scanning on one or more scanning planes of the electrostatic radiation and scanning over the scanner, beam shaping or defining a hole will sweep the arm r 140. Figure 1 further illustrates - The scanning arm 140 and a Faraday cup arm 14 are used to make the workpiece 1 〇 2 134, 孰Α μ· &amp; &Amp;&lt; complex motion through the desired ion beam quantity ion beam properties Faraday cup 152 is one of the scanning and/or inventions intended for measuring or non-scanning ion beam... According to this - Fan view, ion cloth

Vanderpot et al., pp. 3, U.S. Patent No. 7, pp. 35,691, which is incorporated herein by reference. Further, ion implantation system 100 can include other systems, such as the Optima HD scanning system manufactured by Axcelis Technologies, Inc. of Beverly, MA. According to another embodiment of the present month, referring now to Fig. 2, a reciprocating drive system 2A is shown in a front view according to the present invention. It will be understood that: Fig. 2 夕-#, α 2 does not dry the reciprocating drive system 2 〇〇 can operate on two = sweep through the - ion beam 2G5H216, as will be more detailed: two: people below. According to an exemplary aspect of the present invention, a reciprocating drive system W-motor (not shown), wherein the motor processing chamber (also referred to as an end-to-end sub-beam 2. 5 is used as an example) In the case of Zhe Zheng y, the ion beam 205 can include a "pen beam" that travels along a nearly parallel, substantially parallel trajectory, which takes a light spot or a combined ion implantation system. Any of the known techniques of this technology are formed. (not shown), the details of which will not be discussed in accordance with the present invention, in which two or two of the processing chambers are located: a normally closed vacuum chamber, a processing chamber The outer side - the outer ring: the brother has operated to universally isolate from the empty room to maintain the internal environment in terms of columns, can be installed and the real processing room can enter a ... "low power (eg vacuum). The progress is lightly connected to - or more, the workpiece 216 can be transported to the shore, locked to the battle (not shown), without actually losing the chamber (4) environment and the external environment - the "vacuum inside" Can replace the rabbit ★ ★ ★ 门通: rational space ( The display is composed of... The second is usually associated with the external environment. ', Τ #处12 201101364 Invention:: The embodiment 'the processing chamber can be rotated in relation to the external environment. The present invention is expected to be transportable. Any processing chamber and space that handles the workpiece 216. The processing chamber is closed, non-closed, fixed, or temporary, and the processing chambers and processing media are expected to belong to the present invention. An example of a processing chamber is described in U.S. Patent No. 7,135,691, the disclosure of which is incorporated herein by reference.

The shaft-executive rotation 244 is for a shaft, wherein a scanning arm 232, an end effector 278 and a workpiece 216 are in turn rotated about the first shaft 224. Therefore, the workpiece 216 can be reciprocally translated along an ith path 246 associated with an ion beam 2〇5 (eg, reversal through one or more cycles of the first axis 224 via the axis of rotation), wherein The ion beam 2〇5 is shown as entering the page of Figure 2. The shaft 228 is on the first axis? "The rotation 244 (and/or reversal) may be advantageous for control whereby an end effector 278 is oscillated or reciprocated in a uniform manner along the first scan path 246, as will be discussed below. Figure 2 illustrates the end execution The 278 is rotated 248 by one of the second shafts 240, as described above, wherein the rotation of the end effector 278 (and thus the workpiece 216) on the second shaft 240 can be further controlled to maintain the workpiece 216 in relation to the first axis. 224 or the rotational orientation of the ion beam 2〇5 (for example, the workpiece 216 is in relation to the rotational orientation of the ion beam 2〇5, and the extraction electrode is shown by a triangle 25〇 associated with the workpiece 216). In order to average process the workpiece 216' such as: the average implant of ions supplied from the ion beam 2〇5 to the workpiece 216' while traveling along the first scan path 246 13 201101364 while maintaining the end of the row n 278 _ articulated action It is important, for example, to shift the speed or the controlled beam 205 to maintain the end effector 278. The fielding action of the field near the umbrella member through the ion shot provides a fixed speed or controlled call The average processing is completed as follows: the workpiece is separated from the workpiece 216. The first scanning path 246 is traveled to achieve the same. By separation, it is generally desirable to have a fixed (four) fan 254 for the movement of the closed beam, which is usually the actual size of the workpiece 216 (for example, the scan range is larger than the workpiece two) In this example, the predetermined scan range (5) is usually *

The diameter of the nine workpieces 216 plus the ion beam 205: I and - the distance defined by 'where the workpiece 216 travels along the first known path 246 (four) the sub-shot H is added The opposite end of the workpiece Chuan 256. Within the ion beam =: real... defines the desired speed profile for the predetermined scan range -', where the desired speed == complex drive one configuration. For example, 疋 No depends on whether the scanning arm 232 is fixed or rotatable, and a normal fixed speed or variable speed of the rotation 244 of the W 232 can be viewed (and thus the work along the first scanning path) 216 - usually fixed or variable speed). For example, if the guard 216 is related to the scanning arm 232 to maintain the rotational orientation along the first scanning path 246, the round ion beam 205 is close to the predetermined scanning range 254 &amp; two ends (5), then: Change 14 201101364 Scan arm 232 at the rotational speed of the first-vehicle 224 (eg, near the end of the predetermined range), thereby providing a generally uniform dose of ions along the meandering path to the workpiece. 216. Alternatively, or in addition to changing the speed of the scanning arm 232, the properties of the ion beam 205, such as ion beam current, can be varied to produce a normal amount of ions to the workpiece 216. Ο

As indicated by one of the above embodiments, the workpiece is typically expected to maintain the substantially uniform exposure of the workpiece 216 to the ion beam 205 by maintaining a substantially constant velocity 'within a predetermined scan range 254 of the first scan path 246. However, due to the reciprocal alternating reversal of the workpiece 216 along the first scan path, acceleration and deceleration of the #216 are inevitable, such as clockwise and counterclockwise rotation of the shaft 228 on the first axis 224 (eg, : Reverse). Thus, to accommodate acceleration and deceleration of scan f 232, end effector = 78, and workpiece 216, a maximum scan between the opposite ends of workpiece 216 along first scan path 246 between maximum positions 26 and 262 Distance 258 can be further defined. Acceleration and fading may occur in the overshoot region 264 when the ion beam 2〇5 is not in contact with the workpiece 216, or when at least a portion of the ion beam is not in contact with the workpiece 216. It is important to point out that in the conventional two-dimensional scanning system, the allowable amount of acceleration and deceleration during the reversal of the workpiece direction is substantially limited, so that the inertial force transmitted to the rest of the system is associated with the reaction force. To minimize. U.S. Patent No. 7,135,691 describes a reciprocating actuator for traversing an ion beam to scan a workpiece and is incorporated herein by reference. 15 201101364 Referring to Figures 3, 4A, 4B, 5 and 5, various decompositions: said = according to one aspect of the invention utilized in the ion implantation system. A class of analytical components, using a quality analyzer (not shown) for quality = analysis and angle correction. The parsing component of Figure 3 is provided as a real: 'and it is to be understood that other variations and configurations can be applied to the alternative of the present invention. Although not shown, a quadrupole lens or other focusing mechanism can be positioned downstream of the mass analyzer 130 (Fig.!) to compensate or mitigate the effects of beam amplification on the ion beam (Fig. The event typically caused by the ion implantation process charges the workpiece 102, wherein positive ions from the ion beam ι4 strike the workpiece 102 and accumulate in the mask layer. This can cause the excess charge build-up of the workpiece 1〇2, resulting in a charge imbalance of the ion beam 1〇4 t and a known case of beam amplification (bi〇w-up), which is caused by crossing the workpiece 1 The change in the ion distribution of 〇2. Excessive charge build-up can also damage surface oxides (including: gate oxides), resulting in device reliability issues, resulting in breakdown of the insulating layer and the like within the workpiece 1〇2 and reducing device throughput. 3 illustrates a perspective view of a resolution component 3 (FIG. 1 is illustrated as component 135) in accordance with at least one embodiment of the present invention. Since the parsing component is well known to those skilled in the art, the parsing component 3 will not be described in detail. The resolution component includes a plasma electron flood (PEF) component 302. The charging of the workpiece 102 can be controlled using a plasma electronic overflow assembly 3〇2, wherein the workpiece is in a stable, high-density plasma environment. A suitable apparatus for generating and transporting an ion beam through a charge-neutralization system to a planting station is disclosed, for example, in U.S. Patent No. 5, 164, 599 issued to Benveniste, and U.S. Patent No. 5,531, issued to Benveniste. No. 420, U.S. Patent No. 5, 633, 537 to B., and U.S. Patent No. 5, 703, 375 to Chen et al. An arc chamber (not shown) can be positioned below the plasma electronics overflow assembly 3〇2, and the plasma electronics overflow assembly 302 is attached to a PEF box base 331 (Fig. 5), as shown in the beta arc chamber. A filament, a gas introduction crucible and an arc chamber PEF cover 339 (Fig. 5) are included. The cover 339 has a lead-out hole for exposing the arc chamber to the inner surface of a PEF box. It is to be understood that the resolution component 300 can be made in different configurations and all such configurations are contemplated here. The illustrated embodiments are not to be construed as limiting the scope of the illustrated embodiments. The low-energy electrons are taken from the plasma of the arc chamber and introduced into the ion beam 104, which carries the electrons to the workpiece 102, such that the surface of the workpiece 1〇2

The surface charge is neutral. The energy of the electrons is sufficiently low to prevent negative charging of the workpiece i 〇 2 . The plasma electronic overflow assembly 302 for neutralizing the positive charge of the ion implanting workpiece 102 includes a PEF box 303 having serrated sidewalls 312 to prevent adhesion of insulating contaminants to the entire surface of the inner wall. Attached to a part of the wall. The PEF box 303 defines an interior region 222 through which the ion beam Η# (Fig. 1) passes from the ion beam source 116 to the processing chamber 112, as shown in FIG. At least one embodiment of the analysis assembly 300 (shown in perspective view) is positioned between the outlet 128 (Fig. 质量) of the mass analyzer 130 and the processing chamber ι 2, 17 201101364 and contains: «Electronic overflow assembly 3 () 2' - Analytical hole 3〇4, _ postal high current feedthrough assembly 306' - Insulator PEF fitting 3 () 7, - Beam guide exit shield 308 and - Beam guide exit hole 31 〇 (Fig. 4 Magic. Analytical component Further included is a nose-shaped tower 314 that is partially surrounded by a nose-like tower shield 316 and that is connected to the analytical aperture 3〇4 by a spacer-shaped member 314. The spacer 318 is bolted The analytic hole 304 and the nose tower 314 are arranged coaxially within the reel tower 322 to be mechanically maintained, and the turret of the nose is fixed by bolts. To the reel tower 322. A 〇-shaped ring (Fig. 4A) is positioned and solid; t is between the reel tower 322 and the tower ring diaphragm mount. The beam guide exit hole, the hole 31 〇 together with the beam The guide is shielded 3 〇 8 and assembled to the end of the reel tower 322. A front shield PEF 327 can be connected to the front shield spacer pE F 329 and the ore-toothed (four) 312 are attached to the bottom PE1F box base 331, the top wall PEF box 337 and the rear shield spacer PEF 335 using screws and similar (four) pieces. The bundle assembly exit hole PEF (for example: graphite) Or the beam complementary aperture 330 is a key component of the present invention and can be coupled to the rear shield spacer PEF 335 such that it is properly positioned to the analytical component 33. The inventors have recognized that by utilizing close correspondence to the shot In the beam shape (for example, "banana"), one of the beam complementary holes 33〇, the number of particles and contamination can be greatly reduced. In this case, the size and shape of the hole are fixed. There is a typical method to measure the ion beam cross section. Encapsulation, comprising a cross section of an ion beam that strikes a plane perpendicular to one of the ion beam paths. This can be achieved using a system with a segmented detector that is vertical and 18 201101364 The beam. The alternative method can be made by rotating the patterned, plate-spiral hole through the beam, which is provided in two dimensions.

The two images in the X帛 mode can be determined by simple beam burning on the palatable material, and the edges of the beam can also be detected by moving the floating holes to the vicinity of the beam. It should be understood by those skilled in the art that the beams are complementary, and the holes, holes 33G can be applied to many implant products and systems 6 for example, regarding ion beam beam or scanning ion beam implanter, The beam complementary aperture 330 will be applied to the collimator or scanning system 138 (upstream of the figure. It should also be understood that the beam complementary aperture 33 can encompass a variety of shapes and sizes and are contemplated herein. Another embodiment The ion beam shape and size can be accurately determined using a variable aperture (not shown) including a sensor and a control system variable and/or motor system and a field dynamic control, by measuring the shot The edges of the beam are detected by the complementary currents of the bundle and similar ones. In this embodiment, a variable ion beam complementary hole (not shown) can be mounted to adjust the hole to approximate the shape of the ion beam. Dimensions. The beam designed at the exit of the mass analyzer 130 defines a hole 123 to match its acceptance to the emittance of a beam originating from a seam having a narrow width and a height of two An ion source that produces an aberration within the beam by an optical element such as a group of electromagnets. For example, the aberration is caused by the gradient of the ion beam traveling through a magnetic field such that the aberration The curvature radius of the individual ion trajectories of the beam changes. As another example, a gradient in the height direction of the slit beam (such as caused by source magnetization or mass analysis bipolar with a large magnetic pole gap) will be 19 201101364 A beam is caused to be displaced as a function of the non-dispersing direction in the direction of the dispersion direction such that the resulting beam position is not curved as being curved toward the center of rotation of the ion beam of the polar field. Ideally, the beam complementary hole 33G (eg, the scent hole opening will match the shape of the ion beam, and the beam occurring in the hole will collide. Conversely, the system before the 尚未 has not considered these beam shapes and Designing a mass-analytical beam aperture with a rectangular shape. These holes are purely due to the mismatch of the two shapes and will over- or unevenly load the beam. Therefore, the beam complementary m3G can be designed to The degree of emissivity is provided and an optimum amount of beam is provided. It is to be understood that beam complementary holes that are sized and shaped to match any ion beam shape and size as known to those skilled in the art = 330 Furthermore, the beam complementary aperture 33() or other beam defining aperture may be an embodiment of a variable type motor that allows for field adjustment of the hole size to closely match the actual beam size, as discussed above. This beam size (4) method is useful (iv) by reducing the necessary workpiece for scanning to improve the t-production, and also limiting the beam size to prevent processing chamber areas = unwanted beam impact. In addition to beam limiting effects. The resolution and the boundary 截m cut into charged particles trapped in the ion beam. The edge t can thus block the trapped particles and reduce the amount of particles transported to the target chamber. Finally, Excessive beam impingement that utilizes conventional resolution and beam-defining holes can result in sputtered material and secondary electrons. Therefore, the design and beam define the holes to balance the traders that provide sufficient mass resolution, beam current, and particle cut while making the sputtered material the least. In this embodiment, for example, the radius and length of the banana shape have been constructed, 20 201101364, the operation of causing the minimum beam loss to occur at greater than, for example, 20 kiloelectron volts. According to yet another embodiment of the present invention, a beam-complementary complement is provided. A method in which the size and shape of the hole is matched to the size and shape of the ion beam to reduce particle and contamination, as shown in Figure 7 and labeled as reference numeral 7〇〇. Although the method 700 is illustrated and described below as a series of acts or events, it will be appreciated that the invention is not limited by the order of the acts or events. For example, some actions may occur in different orders and/or concurrently with other acts or events other than those illustrated and described herein in accordance with one or more aspects of the present invention. Moreover, not all illustrated steps may be required to implement a method in accordance with the present invention. Furthermore, the methods in accordance with the present invention may be implemented in connection with the formation and/or processing of the structures illustrated and described herein, and in conjunction with other structures not illustrated. This method will be described with reference to the other Figures 1 to 3, 4a, 4b, 5a, 5B and 6. The method 700 begins at 7〇2 and includes selecting ion beam source parameters within, for example, an ion source (Fig. 1). At 7〇2, an ion beam [&gt; 104 is taken and directed toward a mass analyzer 130 (Fig. 1). The ion beam 104 can be a pencil beam, a scattering beam, a ribbon beam, and the like. Select the mass analyzer 13〇(图() parameters at 7〇4', such as: production and similar. Also, write, select the hole position, except for the beam complementary hole 33 of the ion implantation system 〇 This allows the resulting ion beam 1〇4 to travel through the ion implantation system 1〇〇 such that at no, the size and cross-sectional shape of the ion 'beam can be measured and accurately determined by the end station 11〇. In this embodiment, the beam complementary hole 33 is a fixed or constant size and shape 21 201101364. It will be understood that this embodiment is shaped as a banana shaped hole 600, however, a hole can be made. 6〇〇 to match the size and cross-sectional shape of any ion beam. As discussed above, there is a typical method to measure the cross-section of the ion beam, including the impact perpendicular to the plane of the ion beam path. One of the cross sections of the ion beam. This can be achieved by a system with a segmented detector that sweeps the beam vertically and horizontally. In an alternative method, it can be borrowed Rotational patterning A spiral aperture of the plate is formed by the beam, which provides an image in two dimensions. In yet another way, the image can be determined by a simple beam burning of a suitable material, and the edge of the beam It can also be detected by moving a floating hole to the vicinity of the beam. In yet another embodiment, a variable beam complementary hole (not shown) is mounted to adjust the size and shape of the hole. The ion beam shape can be Accurately determined by using a sensor system and a control system-motor system, and a field dynamic control; variable hole (not shown), by measuring the current intercepted by the complementary holes of the beam and the like Measuring the edge of the beam. At 7丨2, a beam complementary hole corresponding to the cross-sectional shape of the ion beam is fabricated, or the shape of the hole is generated by a motor system mounted to adjust the hole so that it corresponds to the ion beam The cross-sectional shape and dimensions of 104. At 714, the critical ion beam factor is measured, and if it is unacceptable, method 7 = returns to 712, otherwise the process ends. Critical ion beam factor package Beam current, particle contamination, and the like. Although the invention has been shown and described with respect to one or more implementations, variations and/or modifications may be made in the examples described without departing from the appended application. The spirit and scope β, in particular, the various functions performed by the above-described components or structures (blocks, units 'engines, components, devices, circuits', etc.) are used to describe the terms of such components (including: Reference to "institution" is intended to mean any component or structure (ie, functionally equivalent) that corresponds to (unless otherwise specified) the specified function of the component, even if the structure is equivalent to the practice of the invention. The disclosed structure of the functions embodied in the examples described herein. Further, although a particular feature of the present invention may be disclosed as being relevant to only one of the several embodiments that may be desired and advantageous for any given or particular application, Combine one or more of his other features with one feature. The term "exemplary" refers to an instance relative to the best or excellent. In other words, the terms "including", ;; includes = (includes), "having", " Having ((8))", having (with) or its variants is beneficial to the detailed description and the patent application

Within the limits of J, these terms are similar to the intent of the term "including (ca)" and are intended to be inclusive. [Simplified illustration of the drawing] Figure "An example of a viewpoint according to the present invention" Ion cloth is not straight system; Ming 2 is a reciprocating drive system according to one aspect of the invention of Gengen, said workpiece is a women's wear to a reciprocating arm; Figure 3 is applied to ions ~ according to a viewpoint of the present invention A perspective view and an assembled view of the analytical component and the electronic overflow of the slurry of the slurry; FIG. 4A and FIG. 4 are an exploded view of a portion of the analytical component according to an aspect of the present invention. 5A and 5B are exploded views and assembled in accordance with the present invention; FIG. 6 is a perspective view of one of the PEF cartridge assemblies in accordance with one embodiment of the present invention. A flow chart of a method for adjusting the size of a complementary hole of a beam of ionized cyanobacteria and engraving the shape and shape of the stalk. [Main component symbol description] 24

Claims (1)

201101364 VII. Patent application scope: 1. An ion implantation system comprising: an ion source 'constituting to generate a mass analyzer along the _beam path--position downstream of the ion source; The mass analyzer is configured to perform mass analysis of the ion beam. The ensemble is complementary to the beam, located below the mass analyzer, an eight-beam path having and along the Ο The Ο page corresponds to a size and shape of the ion beam exiting the envelope. κ 2: The ion implantation system of claim i, wherein the complementary holes of the beam are located upstream of the analytical hole. The ion implantation system of claim 1, wherein the complementary hole of the beam is located downstream of the analytical hole. 4. The ion implantation system of claim 1, wherein the beam complementary aperture is motor controlled to approximate the shape of the beam for size and shape. 5. The ion implantation system of claim 1, wherein the complementary hole of the beam approximates a banana shape. 6. If you apply for a patent range! The ion implantation system, wherein the ion beam shape can be accurately determined by using a sensor system and a motor system of a control system and a field dynamic control system, wherein the variable hole is accurately determined, wherein The motor system is mounted to sense the edge of the beam by, and in view of, the current intercepted by the variable aperture and adjusting the size and shape of the variable aperture. 7. The ion implantation system of claim 1, wherein the ion beam &amp; section encapsulation utilizes a system comprising a vertical and horizontal sweep of the beam 25 201101364 segment detector , patterned on a board and mounted to provide a two-dimensional ion beam of a scene of a rotating spiral hole, measured in a simple beam of material burning and moved by a floating hole to the vicinity of the beam It is measured by detecting the edge of the ion beam. 8. An ion implantation system comprising: a mailer to generate an ion beam along one of the beam paths; "a mass analyzer downstream of the ion source," a mass analyzer to perform mass analysis of the ion beam; and a resolution component downstream of the mass analyzer comprising a plasma electronic overflow assembly, an analytical aperture and at least one beam complementary aperture; and 'Installing the parsing component to support the parsing hole and the at least one beam complementary hole at a specified distance; wherein the parsing hole is located downstream of the mass analyzer member. wherein the at least one beam complementary hole edge The beam path is downstream of the analytic aperture; it: the at least one beam complementary aperture has a size and shape corresponding to one of the ion beams transverse to the bread seal. 9. As claimed in claim 8 The ion implantation system of the item has one less beam complementary hole located upstream of the analytical hole. μ to 10. As in the ion implantation system of the patent application 帛8, at least one beam complementary hole The hole is located downstream of the analytic hole. The ion implantation system of claim 8 is adapted to mount the at least one beam complementary hole to be variable and can be controlled by motor control. It corresponds approximately to the ion-ejecting 'J-size and &lt; cross-cutting bread 26 201101364. 12. The ion implantation system of claim 8, wherein the at least one beam complementary aperture approximates a banana shape. 13. The ion implantation system of claim 8, wherein the ion beam shape is accurately determined by using a sensor system and a motor system of one of the control systems and a field-dynamically controlled variable aperture. Wherein the motor system is mounted to detect the edge of the beam by measuring the current intercepted by the variable aperture and adjusting the size and shape of the variable aperture. 14. A method of matching beam size and ion beam size and shape to reduce particle and contamination, wherein the method comprises: (a) selecting an ion beam source parameter; (b) selecting a mass analyzer parameter , including field strength; (c) selecting an analytical hole location; (d) determining a cross-sectional bread seal of the ion beam; wide) fabricating a cross-bread beam complementary hole of the approximate ion beam and providing the beam Complementary holes; (f) Measure critical ion beam factor; return to the end of the method if the measured critical ion strikes the MI into a small factor that is unacceptable. The beam is complementary to the beam complementary. 15. The method of claim 14 wherein the hole is located upstream of the analytical hole. 16. The method of claim 14, wherein the hole is located downstream of the analytical hole. 27 201101364, the method of claim 14, wherein the beam complementary hole approximates a banana shape. The method of claim 14, wherein the ion beam shape can be accurately determined by using a sensor and a motor system and a field dynamic controlled variable hole, by measuring The current intercepted by the beam complements the hole to detect the edge of the beam. J9 is the method of claim 14, wherein the ion beam cross-section encapsulation uses vertical and water semi-, p-devices, patterned on a board and an:: lifting, ^ image-rotating spiral hole, measuring L material: measured by the two-dimensional ion beam. # Move to the vicinity of the beam to detect the edge of the ion beam. It corresponds approximately to the ion shot:::: two and the shape "Motor control makes eight, the pattern: (such as the next page) 28