TW201100946A - Method of evaluating a multi-tone photomask - Google Patents

Abstract

For a transfer pattern of a multi-tone photomask, spatial image data under exposure conditions are acquired. For the spatial image data, a threshold value of a predetermined effective transmittance is determined. By the use of the threshold value, the spatial image data are converted into binary spatial image data. By the use of the binary spatial image data, the transfer pattern is evaluated.

Description

201100946 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an evaluation method of a multi-tone mask used in the photolithography step. [Prior Art] In the manufacture of an electronic device such as a liquid crystal display device, a photomask having a specific pattern is formed on a resist film formed on a layer to be etched by a photolithography step. The pattern is transferred by exposure under specific exposure conditions, and the resist film is developed, thereby forming a resist pattern. Then, the anti-surname pattern is used as a mask, and the surname is engraved into the layer. In the reticle, there is a multi-tone mask having a light-shielding region for blocking light, a light-transmitting region for transmitting the exposed light, and a semi-transmissive region for transmitting a part of the exposure light. Using such a multi-mode mask including a light-shielding region, a semi-transmissive region, and a light-transmitting region, the desired pattern is transferred to the etched film on the transferred body, and the light-transmitting region of the tunable mask is The semi-transparent area 照射 illuminates the light. At this time, the amount of light irradiated through the semi-transmissive region is smaller than the amount of light irradiated through the light-transmitting region. Therefore, when the resist film thus irradiated with light is developed, the residual film value of the resist film differs depending on the amount of light to be irradiated. In other words, if it is a positive resist, the value of the anti-gubric film remaining in the region where the light is irradiated through the semi-transmissive region of the multi-mode mask is thinner than the resist film value in the region where the light-shielding region is shielded. Further, the residual film value of the resist film in the region where the light is irradiated through the light-transmitting region is 〇 (zero). Thus, exposure and development are performed using a multi-tone mask, whereby a resist pattern having a residual film value (including a residual film value 〇) of at least 3 thicknesses can be formed. When a resist film having a region having a different residual film value is used and etching is performed to form a transfer target of a 146463.doc 201100946 resist film, first, a region where the residual film value 〇 is etched (the region where the transfer target is exposed) : Corresponding to the region γ I of the light-transmitting region of the multi-mode mask, the film is resisted by ashing, thereby removing the region of the thickness (4) which is relatively thin (corresponding to the semi-transparent mask) a region of the light region), exposing the portion of the object to be transferred. Then, etching the exposed film, the film, and a multi-tone mask having a plurality of resist patterns having different residual film values, The number of sheets of the photomask used is reduced, whereby the photolithography step can be made efficient, and it is very useful. The defect inspection of the gray scale mask is disclosed in Japanese Laid-Open Patent Publication No. 2004-309327 (Patent Document 1). The method of producing an image data of a gray scale portion, and performing image processing for recognizing a defect of a gray scale portion, and performing a defect inspection method. [SUMMARY OF THE INVENTION] (Problems to be Solved by the Invention) As described above, Semi-transmissive area in multi-mode mask The region becomes a region in which the thickness of the resist film is relatively thin with respect to the light-shielding region. For example, in a TFT (Thin Film Transistor) for a liquid crystal display device, the portion can form a region corresponding to the channel portion, and, on the other hand, The light-shielding region can form a region corresponding to the source, the drain, etc. The portion formed by the semi-transmissive region greatly affects the performance of obtaining an electronic device such as a liquid crystal display device. Specifically, if not strictly controlled half The line width of the light-transmitting region and the transmittance of the exposure light may cause problems in the accuracy or yield of the device to be obtained. Therefore, it is necessary to predict in advance the exposure/transfer process of the semi-transmissive region. The shape of the resist pattern formed on the transfer target body is evaluated, and 146463.doc 201100946 is easily and accurately performed. However, in the patent document!, only the image data is subjected to Gaussian blur processing to perform defect inspection. The reticle is not evaluated in a state reflecting the irradiation condition or the optical condition when the reticle is actually used. Therefore, it is practically impossible to implement the formation according to the reticle to be rotated. The present invention is based on the above-mentioned problems, and the object of the present invention is to provide a multi-mode mask evaluation method capable of grasping a multi-tone mask. The spatial image formed under the actual transfer conditions, and the multi-mode mask is evaluated by correctly reflecting the image data of the anti-I-worm pattern formed on the transfer body by the multi-tone mask. ' (Technical means for solving the problem) The method for evaluating a multi-mode mask according to an aspect of the present invention, wherein the multi-tone mask II is formed by patterning at least a light-shielding film formed on a transparent substrate, and includes a light-transmitting region, a light-shielding region, and a half The above-mentioned evaluation method is characterized in that the method for evaluating the transfer of the light-transmissive area includes the following steps: acquiring spatial image data of the transfer pattern of the transfer pattern as the evaluation target under exposure conditions; determining the spatial image data a specific effective transmittance threshold; and binarizing the above spatial image data using the above threshold, and using the above binarized spatial image Like the data, evaluate the above transfer pattern. According to this method, the actual transfer condition can be used to accurately reflect the image data of the resist pattern formed on the transfer target by the multi-mode mask, and the multi-mode mask can be evaluated. 146463.doc 201100946 In the evaluation method of the tuned mask, the aerial image data in the normal portion having the normal transfer pattern can be obtained in advance, and the above-mentioned threshold value is determined using the spatial image data of the normal portion. In the evaluation method of the multi-tone mask, the threshold value may be a threshold value determined by using the above-mentioned mask mask based on the target line width after the transfer pattern is transferred onto the transfer target. In the evaluation method of the ’ multi-type reticle, the above threshold may also be based on

The threshold value determined by the line width design value of the transfer pattern formed in the multi-mode mask described above. In the N-month type hood sweat estimation method, the above-mentioned transfer pattern is evaluated, and the above-mentioned binarized $ image data having a normal transfer pattern is acquired in advance, and the obtained image is obtained. Compare with image data as the above. d. The binarized spatial image data of the object is included in the evaluation of the multi-tone mask. In the following: :: and W just one print pattern method, as the above-mentioned evaluation object, the semi-transparent Master the above-mentioned transfer pattern with light passing through the defect. The evaluation map of the evaluation target of the multi-mode reticle includes: the spatial image data of the above-mentioned part of the broken & value is compared with the above-mentioned positive, and two-valued spatial image data. Whether the transfer pattern of the evaluation object is corrected. As a method for evaluating the multi-tone mask, it is preferable to include the line width calculation step 146463.doc 201100946 - the money is calculated based on the binarized spatial image data of the transfer pattern as the evaluation target The line width of the above-described defective portion when the transfer pattern is transferred onto the transfer target. In this case, it is preferable that the line width calculated as described above is different from the line width obtained by binarizing the spatial image data based on the normal portion, and is different from the specific range, and is corrected for the defect. In the method for evaluating a multi-mode mask, the semi-transmissive region may be formed by forming a fine pattern under the exposure machine on the light-shielding film formed on the transparent substrate, and in the method of (4) of the multi-tone mask. The semi-transmissive region may be formed on the transparent substrate by a semi-transmissive film that transmits a portion of the exposure light. In the method for evaluating the multi-mode mask, the step of acquiring the spatial image data preferably includes: irradiating the reticle formed with the transfer pattern onto the exposure light under the exposure condition, and capturing the image by the imaging mechanism. The transmitted light of the transfer pattern. According to another aspect of the present invention, in a method of manufacturing a multi-tone mask, the multi-tone mask is provided with a light-transmitting region, a light-shielding region, and a half by patterning at least a light-shielding film formed on a transparent substrate. The transfer pattern of the light-transmitting region is characterized by: a pattern forming step of performing the patterning to form the transfer pattern, and an evaluation step of evaluating the formed transfer pattern; and the evaluation step is The method of evaluating the method. = The method 'is evaluated by the image data of the anti-money pattern that correctly reflects the multi-tone mask formed on the transferred p body', so it can be manufactured without any problem in the use of the 146463.doc 201100946 reticle. Adjustable mask. In the method of manufacturing the multi-mode mask, it is preferable that the photomask having a line width distribution in the plane of the transfer pattern when transferred onto the transfer target is 0.15 μm or less by the evaluation method 2 described above. . According to still another aspect of the present invention, in the pattern transfer method, the transfer pattern is transferred onto the transfer target by using a photomask using the above-described multi-mode mask manufacturing method. According to the method, since the multi-mode mask which is used to accurately reflect the image data of the anti-(4) case in which the multi-tone mask is formed on the transfer target is used, it can be correctly applied to the object to be transferred. Transfer transfer pattern. (Effect of the Invention) The method for evaluating a multi-mode mask of the present invention is a pattern of a light-shielding film formed on a transparent substrate, a transfer pattern of a region, a light-shielding region, and a semi-transmissive region, == : estimating the spatial image data of the transfer pattern under the exposure condition of the transfer pattern of the object, and determining a threshold value of the specific effective transmittance for the spatial image data, and using the above threshold value to use the above-mentioned threshold value The data is binarized, and the binarized spatial image data is used to evaluate the transfer pattern', so that the transfer conditions can be used to accurately reflect the resistance of the multi-mode mask formed on the transferred body. The image data of the etch pattern is evaluated by a multi-tone mask. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The inventor of the present invention has the objective of obtaining the desired resist residue on the II print 146463.doc 201100946

The film value is insufficient if only the film transmittance of the semi-transmissive film for the light transmitting portion of the multi-mode mask is insufficient, that is, it is found that the desired residual film residual film value σ is obtained on the transferred body. When determining the residual film value, it is necessary to control not only the semi-transmissive film used for the photomask as the film (the film composition or the film thickness), but also the light transmittance. The shape of the pattern of the cover, or the optical characteristics of the light source used for exposure, "Characteristics of the system #, control the transmittance of the diffraction phenomenon of the generated light. The present inventors have proposed to replace the film transmittance of the semi-transmissive film by eight, and to specify the effective light transmittance (effective transmittance) τ 透射 of the transmission mask, and to control the effective transmittance. Further, the effective transmittance ΤΑ is in the actual (d) exposure condition τ, and the transmittance of the exposure light, for example, the semi-transmissive region can be considered. Actually, since the light transmittance of the semi-transmissive region has a distribution as shown in FIG. Ub) due to the influence of the adjacent light-shielding portion or the like, the transmittance value corresponding to the peak of the light transmission curve in the region can be taken as The representative value of the effective transmittance. Since the transmissive transmittance τ 为 is an index of optical conditions or pattern design in addition to the transmittance of the film @, the light intensity of the exposure on the transferred body is correctly reflected, and therefore, the resistance formed for management is The index of the residual film value of the button pattern is suitable. Further, the effective transmittance ' as the semi-transmissive region' may be such that the exposure light transmittance in the it light region is (10). /. The light intensity of the transmissive semi-transmissive region is the transmittance of the portion of the maximum value. The reason for this is that, for example, when the mask is formed with a positive anti-surname agent on the transfer target, it is related to the minimum value of the residual film residual film value generated in the semi-transmissive region. In the case of such a range management system, for example, when a thin film transistor (4) is manufactured using a multi-mask, the semi-transmissive region is set to correspond to: I46463.doc 201100946, and the channel region of the TFT is particularly effective when the width of the channel is 5 μm or less. Further, "Ch-L (channel length)" in Fig. 3 and the like means the width of the channel portion. Further, as described above, as the effective transmittance TA, here, the maximum value of the light intensity distribution curve in the semi-transmissive region (if a positive-type anti-caries agent is used, it corresponds to the residual film value of the resist film) The transmittance at the bottom (minimum) is representative. That is, in the case of being sandwiched between two light-shielding regions and adjacent to the semi-transmissive regions of the light-shielding regions, the light intensity distribution curve of the transmitted light becomes a bell-shaped curve, and the effective transmittance Τα means corresponding to The transmittance of its peak. The effective transmittance is determined by the film transmittance Tf, the actual exposure conditions (optical parameters, the spectral characteristics of the illumination light), and the actual shape of the mask pattern. However, in actual evaluation, it is simplified. As the exposure conditions, model conditions can be represented. This condition can be set to use, for example, an optical system in which the numerical aperture (NA) is 〇.〇8 and the homology (4) is 〇8, and the illumination light of the g line, the h line, and the i line intensity of 1: 1:! Exposure conditions. On the other hand, the film transmittance Tf can be set to a transmittance at which the semi-transmissive region has a sufficiently large area with respect to the analysis limit of the exposure conditions when the semi-transmissive film is formed into a semi-transmissive region on the transparent substrate. When the semi-transparent region is provided with a semi-transparent space in which the fine line width of the light-shielding pattern is used as a semi-transmissive region, the "film transmittance" of the space in the region where the read-through mourning region is equal is equal. It is 1〇〇Q/p, and the transmittance of the actual domain according to the evaluation side described later is affected by the line width of the pattern, etc., so the exposure light transmittance of the 1 θ ', the light-transmitting region is based on the actual transmittance. Derogatory and effective. And thousand ^ 146463.doc 201100946 As described above, the evaluation of the multi-tone mask must be performed to reflect the resist pattern on the transferred body obtained through the actual exposure transfer process, and it is necessary to evaluate the mask easily and with high precision. The quality, and inspection (evaluation) whether there is a problem in the processing of the processed layer. The present inventors focused on this problem and found that spatial image data is obtained under actual exposure conditions, and the spatial image data is used to determine the threshold value of the specific effective transmittance, and the spatial image data is binarized by the threshold value. The transfer pattern is evaluated by the 空间-valued space image data, whereby the image data of the resist pattern formed on the transfer target by the yang ray mask can be reflected, and the multi-tone light grass can be evaluated. That is, the light-shielding film formed on the transparent substrate is patterned, thereby providing a transfer pattern of the light-transmitting region, the light-shielding region, and the semi-transmissive region of the package 3, and the transfer pattern as the evaluation target is obtained. The spatial image data of the transfer pattern under light conditions determines the threshold value of the specific effective transmittance for the spatial image data, and uses the above-mentioned threshold to binarize the spatial image image = bead material and use The binarized spatial image data is used to evaluate the transfer pattern, thereby accurately reflecting the image data of the resist pattern formed on the transfer target under the actual exposure conditions, and evaluating Multi-tone mask. The multi-tone mask which is the object of the evaluation method of the embodiment of the present invention is formed by patterning at least the light-shielding film formed on the transparent substrate, and the light-transmitting region, the light-shielding region, and the semi-transmissive region are turned. The mask of the week above the printed pattern. That is, in the multi-mode reticle, a semi-transmissive region is provided in addition to the light-shielding region and the light-transmitting region, whereby a resist pattern formed on the transfer-receiving body 146463.doc 201100946 is formed with a plurality of film thicknesses. region. The light-shielding area can be shielded from light, and the light-transmissive area can expose the transparent substrate. The semi-transmissive region is a portion in which the transmittance is relatively smaller than that of the light-transmitting region, and is a region in which a desired anti-surname film is formed on the object to be transferred. The semi-transmissive region can be formed, for example, by forming a semi-transmissive film having a specific film transmittance on a transparent substrate. The film transmittance of the semi-transmissive film is 10% to 70% when the transmittance of the light-transmitting region is "ο%, and is more preferably 2% to 6〇%. Further, the light-shielding film formed on the transparent substrate forms a pattern of line widths below the resolution limit of the exposure machine, and can also be used as a semi-transmissive region. Further, the multi-tone mask which is the object of the evaluation method may be a light having a resist pattern of three or more anti-removal film values (excluding the residual film value of the resist film). cover. Further, as a transparent substrate, a glass substrate or the like can be exemplified as a light-shielding exposure.

The light-shielding film can be exemplified by a metal film such as a chromium film, a stone film, a metal oxide film, a metal-7 film such as a divalent (4), or the like. Further, the light-shielding film preferably has an anti-reflection film on its surface, and examples of the material of the anti-reflection film include chromium oxide, nitride, carbide, fluoride, and the like. As the semi-transmissive film ‘through which the exposure light is partially transmitted, chromium oxide, nitride 'carbide oxynitride, nitron oxycarbide, or metal cerium compound can be used. In particular, it is preferably an emulsified road film, a chromium nitride film, a metal film such as a 7-indium film, or an oxide, a nitride, an oxynitride or a carbide thereof. More preferably, an oxide of bismuth molybdenum oxide can be used. a film of a nitride, a compound, or the like. The transfer pattern of the oxynitride, the carbide, and the oxynitride as the multi-tone mask can be formed by forming a semi-transparent film and a light-shielding film on a transparent substrate, and separately patterning them. Forming the transfer PM case' or forming a light-shielding film on the transparent substrate, and patterning into a fine pattern having a resolution equal to or lower than the exposure machine, and transferring the intermediate transfer transfer pattern or the like by the light diffraction effect. ❹

In the evaluation method of the multi-tone mask of the embodiment of the invention, the spatial image of the transfer pattern of the transfer pattern under the exposure condition of the transfer target is obtained, and the specific effect is determined for the spatial image. The threshold of the transmittance 'binarizes the spatial image (4) with the (four) threshold, and evaluates the transfer pattern using the binarized image data. In the evaluation method, the silk is used as a target for the calculation of the object to be evaluated (4) the spatial image data of the transfer pattern under the exposure conditions. That is, when the aerial image data is acquired, the exposure light under the exposure condition is irradiated to the photomask on which the transfer pattern is formed, and the transmitted light of the transfer pattern is imaged by the imaging mechanism. Here, the exposure condition 6 is an exposure member when the multi-mode mask is used. Specifically, the exposure strip (4) enables the optical purity (number, aperture), σ (coherence), and illumination wavelength of the 贱(四) 乡光料. Here, when the spatial image is exposed to the exposure condition, the image is applied to the image (light intensity distribution) on the transfer body. For example, the transfer pattern of the FT shown in Fig. 3 (4) (channel length: 5 〇 _ 'membrane transmittance side) is 0.08, σ - 〇 · 8, and the intensity ratio of each wavelength of the exposure light is g line (four) 仏 line When the exposure is performed under the exposure condition, the obtained spatial image is as shown in Fig. 3(b). Further, in Fig. 3(a), the reference symbol _ is the light shielding film, and the reference numeral 22 is a semi-transmissive film. In this evaluation method, the spatial image data determines the specific effective transmission 146463.doc •13· 201100946 rate threshold. For example, in the transfer pattern as shown in (4), that is, in the transfer pattern in which the semi-transmissive medium 22 is provided between the two light-shielding films, if the effective transmittance between a B is obtained, it will be as shown in the figure. The threshold of the actual drink transmittance of the step 1(b) is relative to the threshold (TH1, TH2, TH3) of the characteristic curve shown in Fig. 1(b). The difference between the thresholds is the difference in the amount of exposure given to the mask. The threshold must be used as a basis for evaluating the transfer pattern, making the method of its decision important. As described above, the effective transmittance ta means the transmittance of the exposure light, for example, the semi-transmissive region of the reticle under actual exposure conditions. The effective transmittance varies according to the line width as described above. If not, the threshold value of the effective transmittance corresponds to a partial threshold (CD (Critical Dimension) corresponding to the semi-transmissive region, and the corresponding threshold is large. The line width of the portion of the semi-transmissive region is small. The effective penetration limit can be a mask, based on the transfer of the transfer pattern onto the transfer target: the line width design value 丄 based on the transfer pattern formed on the mask =, can be determined in advance to have normal Spatial image data of normal T-light conditions of the transfer pattern. The effective transmittance of the above-mentioned target line width (e.g., the target line width to be formed as a half-transmission of the channel portion) can be given with reference to the spatial image data 2 as a threshold value. Or ~ ~ take the space image of the normal part of the 逑, and find the light effect value (such as 'corresponding to the line of the semi-transmissive area of the channel part), or as a threshold . Then, the binarized spatial image data can be obtained by binarizing the spatial image data of the transfer pattern to be evaluated by 146463.doc 201100946 using the threshold value of the effective transmittance determined above. The transferred pattern was evaluated using the binarized spatial image data. For example, the absolute value of the line width, the presence or absence of white defects, and black defects can be judged based on the binarized spatial image data. For example, based on the binarized spatial image data as the transfer pattern of the evaluation object, the line width (line width calculation step) of the defective portion when the transfer pattern is transferred onto the transfer target is calculated, Ο

Q When the line width calculated here differs beyond the specific range, it can also be used as the defect correction target. In the evaluation of the transfer pattern, (4) the binarized spatial image data of the normal portion of the normal transfer pattern may be obtained and compared with the binarized spatial image data of the evaluation object. Then, based on the comparison result 'whether or not the use is the basis of the defect', the line width distribution of the mask is evaluated, and depending on the situation, it is determined whether or not the defect correction is required. The binarized spatial image data of the transfer pattern to be evaluated is compared with the binarized spatial image data of the normal portion, thereby judging the quality of the transfer pattern as the evaluation pair: Whether it needs to be corrected. Here, as a reference for whether or not it is a defect, for example, an inspection image of a black defect portion may be generated in the above method, and a semi-transmissive region sandwiched in the light-shielding region (4) (4) = ^ 21) (half of the light transmission of FIG. 1 (4) In the case of the film 22), in the case of the island pattern of one turn, the above-mentioned threshold value is set as the maximum effective transmission of the semi-transmissive region. For example, when the semi-transparent measurement is performed, the transfer pattern to be evaluated as the basis of the correction may be the same as the above-mentioned normal transfer pattern 146463.doc 15-201100946 The mask 3 is the same as the mask. For example, the mask evaluation in the case where the repeat pattern of the unit pattern is arranged, represented by tft, can be compared with each other based on simple patterns located in different regions of the same mask. Further, it is useful to determine whether or not there is a defect. The transfer pattern which is the object of s flat evaluation may be compared with the normal portion to grasp that the semi-transmissive portion having the transfer pattern contains a defective portion. For example, borrowing & Cover pattern shape defect inspection device When a pattern defect is found in the multi-tone mask, 'according to the above evaluation method, it is known in advance whether the pattern of the reticle formed on the object to be transferred is a problem under actual exposure conditions. It has the advantage that it can be grasped before the actual exposure step, that is, the stage of mask evaluation. The inventors have found that it has been widely used to judge the presence or absence of defects only according to the pattern of the mask pattern, but the defect transfer is judged by the method. The present invention has a case where there is no problem under the actual exposure conditions, or the opposite. Further, the inventors have found that: # is determined by a normal pattern shape defect inspection as a black defect (excessive defect), according to the actual The use of the photomask also has a function as a white defect (deficient defect), which is considered to be caused by a synergistic effect of an exposure wavelength range called an i-line to a g-line, a pattern shape, a size, and the like. Including the above-mentioned evaluation method, at least a light-shielding film is formed on the multi-plate, and the film on the transparent substrate is patterned to form a transfer pattern. The above method evaluates the formed transfer case and 'in this evaluation, if defect correction is required, the defect correction can be performed and then the method is evaluated in a simple manner. By such evaluation 146463.doc -16- 201100946 d In the evening, the tunable mask is evaluated by the image data of the resist pattern formed on the rotated and pm by the multi-tone mask. Therefore, there is no problem in the actual use of the reticle. In particular, it is possible to manufacture a high quality of a line & Multi-mode mask. 评估 ” Body and °纟 transfer pattern evaluation, pre-acquired binarized spatial image data of the normal part of the normal transfer pattern, and the above-mentioned = flattened object d-value Compare the spatial image data. Since the binarized spatial image data of the normal portion having the normal transfer pattern is previously obtained in comparison with the spatial image data, the correct mask can be evaluated and the transfer pattern of the evaluation object is compared. It is preferably included in the same mask together with the above normal transfer pattern. The line width in the plane is η ^ ς knife 〇·15 μΓη or less, which can be the line width distribution with respect to the line width standard value (the absolute value of the difference between the line width maximum and the line width minimum) is ( Μ5 is hereinafter referred to as follows. For example, the line width design value of the transfer pattern of the photomask or the transfer width of the target transfer pattern to the object to be transferred (the processed body) may not be a standard value. Or can be a wire c ^ seven - between the same pattern in the transfer pattern, so that its line is distributed as 〇. 1 5 or less. The multi-mode reticle thus obtained can be transferred on the transfer body The multi-tone light grass is recognized by the 丄 ( ( ( ( ( ( ( ( ( 多 多 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 ... ... “ “ “ “ “ “ “ “ “ “ “ “ The transfer pattern is correctly transferred on the transfer body. Here, as a device for converting a transfer pattern into a space image data, for example, the device shown in Fig. 2 can be exemplified. The light source 1, the illumination optical system 2 that irradiates light from the light source 1 to the reticle 3, and the light that transmits the reticle 3 The mirror system 4 and the imaging mechanism 5 that images the image obtained by the objective lens system 4. The light source 1 is a light beam that emits a specific wavelength, and for example, a sensible lamp, a metal gutta lamp, a UHP lamp (ultra-high pressure mercury lamp), or the like can be used. The illuminating optical system 2 guides the light from the light source , and irradiates the light to the reticle 3. The sigma illuminating optical system 2 is provided with an aperture mechanism (aperture aperture 7) so as to have a variable numerical aperture (NA). 2 is preferably provided with a view aperture 6 for illuminating the illumination range of the entire illuminator 3. The light passing through the illumination optical system 2 is irradiated to the reticle 3 held by the reticle holder 3a. 2 is disposed in the casing 13. The mask 3 is held by the mask holder 3a. The mask holder 3a supports the lower end of the mask 3 while keeping the main plane of the mask 3 substantially vertical. And the vicinity of the side edge portion, and the reticle 3 is kept fixed obliquely. The reticle holder 3a can be kept as a large size of the reticle 3 (for example, a main plane of 122 〇 mm x 1400 mm, a thickness of 13 mm), and various sizes Photomask 3. Again, 'substantially vertical refers to Figure 2 The angle perpendicular to the distance indicated by θ is approximately 10 degrees or less. Light irradiated to the reticle 3 is transmitted through the reticle 3, incident on the objective lens system 4, and the objective lens system 4 includes, for example, light incident on the transmission illuminator 3, the light beam The infinity correction is applied to make the first group (simulator lens) 4a of the parallel light, and the second group (imaging lens) 4t^ simulator lens 4a for imaging the light beam passing through the first group is provided with an aperture mechanism ( The aperture stop 7) makes the numerical aperture (NA) 146463.doc -18·201100946 variable. The light beam passing through the objective lens system 4 is received by the imaging mechanism 5. The objective lens system 4 is disposed in the housing 13. The imaging mechanism 5 The image of the image mask 3. As the imaging unit 5, an imaging element such as a CCD can be used. In the apparatus, since the numerical aperture of the illumination optical system 2 and the numerical aperture of the objective lens system 4 are respectively variable, the ratio of the numerical aperture of the illumination optical system 2 to the numerical aperture of the objective lens system 4, that is, the sigma value, can be changed. (σ: homology). The above conditions are suitably selected whereby the optical conditions at the time of exposure can be reproduced or approximated. Further, in the apparatus, the arithmetic unit 11 that performs image processing, calculation, comparison with a specific threshold value, display, and the like of the captured image obtained by the imaging unit 5 is provided; and control of the display unit 12 is provided. The mechanism 14; and the movement operating mechanism 15 that changes the position of the frame 13. Therefore, you can use the

摄像 The captured image, or light intensity distribution or transmittance. Device

The exposure conditions are as shown in Fig. 2 having such a configuration. Here, the above evaluation will be specifically described. First, evaluate m;

The ratio is a pattern of 40% of the translucent area. The method determines whether or not there is a defect correction, and the transfer pattern for 疋ur manufacture. The length is 5·〇 μηι, and the film transmission is exposed using the device shown in Figure 2.

H6463.dOJ _ 19- 201100946 The transfer pattern and the image are obtained as a space image as shown in Fig. 3(b), and are set as spatial image data. The first condition of this selection is ΝΑ=0·08, σ=0·8, and the intensity of each wavelength of the exposure light is greater than the gas line/丨 line ^^. First, obtain a spatial image of the normal exposure/L I β solid system &normal; under the above exposure conditions. Use this space to be foolish and careful. 7. Two-dimensional J1 豕 抖 ,, can obtain the effective transmittance of the target line width after transfer, so as to determine its threshold. For example, if the target line width of the channel length after transfer is set to Ο _, the effective transmittance is 0 · 1 8 3, so the combination of Yuan anti-up and wind-hepatic equipment will be used as a threshold. Figure 3(c) applies to this Pro

Binary spatial image of the limit.

If it is applied to the spatial image data of the transfer pattern to be evaluated, the spatial image f can be valued. This is shown in Figures 4(b) to (1). Alternatively, in the spatial image data of the above normal pattern, instead of the target line width after the transfer, the effective transmittance of the line width design value given to the mask may be obtained as a threshold. For example, if the line width design value is set to 5.0 μηι, the effective transmittance of the line width is 〇122 (the figure can be used, therefore, the threshold value can be used to evaluate the transfer pattern spatial image data of the object. Fig. 5(b) to (i) show the binarized space image. Further, the Thrsehold value (threshold value) of Th effective transmission rate in Figs. 3(c) and (4). As described above, the normal portion will be used. The binarized spatial image data (Fig. 4(a), Fig. 5(a)), and the binarized spatial image data of the evaluation object (Fig. 4(b)~(1), Fig. 5(b)~ (1)) The comparison can be made to determine whether it is necessary to correct the black defect and the white defect. The present invention is not limited to the above embodiment, and can be appropriately modified. For example, the material, the pattern configuration, the number of members, and the ruler of the above embodiment 146463.doc •20· 201100946 Various changes can be made, and the order and processing order can be taken as an example. [Simple description of the drawing] Fig. 1 (4) shows a diagram of a transfer pattern, (b) shows the transfer rate and (4) the transfer pattern. The relationship between the position and the exposure limit between the positions.

Fig. 2 is a view showing an example of a device for reproducing exposure conditions of an exposure machine. Fig. 3(a) is a view showing an example of a transfer pattern, (8) is a view showing a spatial image of the transfer pattern, and (4) is used ( b), showing a map based on the target line width after the transfer pattern = transfer onto the transfer target to determine the threshold value, and (d) using (b), based on the design line of the mask A binarized spatial image obtained by widening the threshold. 4(a) to (i) are binarized space images of the normal portion and the evaluation target obtained based on the target line width on the transfer target. Fig. 5 (a) to (i) are binarized space images of the normal portion and the evaluation target obtained based on the design line width determination threshold. [Main component symbol description] 1 Light source 2 Irradiation optical system 3 Photomask 3a Photoreceptor holder 4 Objective lens system 4a Simulator lens 4b Imaging lens 5 Imaging mechanism 146463.doc 201100946 6 Field of view aperture 7 Aperture aperture 11 Calculation mechanism 12 Display mechanism 13 Frame 14 Control mechanism 15 Movement operating mechanism 21 Light shielding film 22 Semi-transmissive film 146463.doc - 22

Claims (1)

201100946 VII. Patent application scope: 1. A method for evaluating a multi-mode mask, wherein the multi-mode mask is formed by patterning a light-shielding film formed on a transparent substrate, and having a light-transmitting region and a light-shielding region. And the transfer pattern of the semi-transmissive region, wherein the evaluation method is characterized by comprising the steps of: acquiring spatial image data of the transfer pattern of the transfer pattern as an evaluation target under exposure conditions; The image data determines the threshold of the specific effective transmittance. The above-mentioned threshold value is used to binarize the above-mentioned spatial image data, and the above-mentioned binary image data is used to evaluate the above-mentioned transfer pattern. • 2. The method for evaluating the multi-mode mask of the request item is to obtain the spatial image data of the positive t portion of the normal transfer pattern in advance, and use the spatial image data of the normal portion to determine the above threshold. . 3. The evaluation method of the multi-mode optical sheet of the requester, wherein the threshold value 〇', using the multi-mode mask described above is determined based on the target line width after transferring the transfer pattern onto the transfer target The threshold. The method for evaluating a multi-mode mask of the item i, wherein the threshold value 2 is a threshold value determined by setting a line width of the transfer pattern of the multi-mode mask. 5. The method for evaluating a multi-mode mask, wherein the step of evaluating the above-mentioned rotation: the step of: the pre-acquisition of the above-mentioned binarized spatial image data having a normal transfer pattern, and obtaining the space image data obtained by the method It is compared with the binarized spatial image data of the above-mentioned evaluation object 146463.doc 201100946. 6. If the request item 2 is more than the yin y g g 夕 式 光 光 评估 仗 仗 仗 仗 仗 仗 仗 估 估 估 估 估 估 估 估 M M M M M M M M M M M M M M M M M M M ’ ’ ’ ’ ’ ’ The transfer pattern is included in the phase 7. As in the request item 5, the evaluation method of the Hu 4 stop macro reticle is used to evaluate the transfer of the target & - as the evaluation pattern before the above comparison, master the above The semi-transmissive portion in the transfer case contains a defective portion. 8 · As requested in item 2 - stop $.,, the evaluation method of the modulating hood, which includes: the transfer pattern to be the object of the evaluation and the above-mentioned legitimate Qiu " one / value two shirt For example, the 'important' and the valued m image data are tbi compared, and the transfer pattern to be evaluated is required to be corrected. • The evaluation method of the multi-mode mask of the spray item 7 includes a line width calculation A, which is calculated based on the binary value of the transfer pattern as the evaluation target (7) The line width of the above-mentioned defective portion when the transfer pattern is transferred onto the transferred limb. 10. The multi-mode mask f-estimation method of claim 9 is obtained from the above-mentioned line calculated by the binarized spatial image data based on the above-mentioned legitimate part. When the special and the special range are different, the object is corrected for the defect. 11. The method according to claim i, wherein the semi-transmissive & field is formed on the transparent light-drawing substrate formed on the transparent substrate, forming an exposure limit of the exposure machine Made of fine patterns. 12. The evaluation method of the multi-mode mask of the requester, wherein the semi-transmissive region is on the transparent substrate to form a portion of the transmitted exposure light, 146463.doc 201100946, which is semi-transparent. 13' The method for evaluating the multi-module reticle of the present invention, wherein the step of obtaining the spatial image data comprises: forming an exposure light under the condition of the above-mentioned turn (4): The transmitted light of the transfer pattern is imaged by an imaging unit. 14) A method of manufacturing a multi-tone mask, wherein the multi-tone mask is patterned by a light-shielding film formed on a transparent substrate, and has a light-shielding region, a light-shielding region, and a semi-transparent wire. In the transfer pattern of the domain, the manufacturing method is characterized by comprising: performing the above-described patterning to form an evaluation step of the transfer pattern formed by the pattern formation evaluation of the transfer pattern; and the evaluation step is using the request item 1 to the evaluation method of claim 13. 15. y, 7U early < 16. Estimation Method 'The above-described masks in which the line width in the plane of the transfer pattern when transferred onto the object to be transferred is distributed to the rabbit η κ , and the horse is 0.15 μm or less. The transfer pattern method is characterized in that the transfer pattern is produced by using the photomask manufactured by the method of manufacturing the photomask of the present invention. 146463.doc