TW201042251A - Thermal conductivity measurement system for one dimension material and measurement method thereof - Google Patents

Thermal conductivity measurement system for one dimension material and measurement method thereof Download PDF

Info

Publication number
TW201042251A
TW201042251A TW98117906A TW98117906A TW201042251A TW 201042251 A TW201042251 A TW 201042251A TW 98117906 A TW98117906 A TW 98117906A TW 98117906 A TW98117906 A TW 98117906A TW 201042251 A TW201042251 A TW 201042251A
Authority
TW
Taiwan
Prior art keywords
measured object
thermal conductivity
peak frequency
suspended portion
center point
Prior art date
Application number
TW98117906A
Other languages
Chinese (zh)
Inventor
Qing-Wei Li
Chang-Hong Liu
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW98117906A priority Critical patent/TW201042251A/en
Publication of TW201042251A publication Critical patent/TW201042251A/en

Links

Landscapes

  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

The invention relates to a thermal conductivity measurement system for one dimension material. The system includes an object placing device, a geometric parameter obtaining module, a characteristic peak frequency value of the Raman-spectra obtaining module, a thermal power obtaining module, a comparing module and a calculation module. The characteristic peak frequency value of the Raman-spectra obtaining module is used to obtain a characteristic peak frequency value of the Raman-spectra of a middle area of the suspended parts of the object which is regarded as an initial value, and to obtain a characteristic peak frequency value of the Raman-spectra of any end point of the suspended parts of the object when the object is self-heated by current and reach a heat balance. The calculation module is used to calculate the thermal conductivity of the object according to the temperature difference between the middle area and the any end point of the suspended parts of the object, the geometric parameters of the object and the thermal power of the object. The invention also relates to a method for using the thermal conductivity measurement system to obtain the thermal conductivity of the object.

Description

201042251 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種測量系統及測量方法,尤其涉及一種一 維材料熱導率測量系統及方法。 【先前技術】 [0002] 熱導率係反應材料熱學性質之重要參數,因此在工程散 熱等應用領域,選擇具有合適熱導率之材料尤為重要, 故準確測量各種材料之熱導率對於材料之工程應用具有 重要意義。 [0003] 當需要測量熱導率之被測物為一維奈米材料時,如奈米 絲、單根奈米碳管、奈米碳管束或奈米碳管線等,其熱 導率之測量一直比較困難。因為在熱導率測量中,需要 得到被測物在某一區域之溫度差。然對於一維奈米材料 ,由於它們橫截面之特徵寬度在100奈米以内,需要對被 測物測溫之區域在微米量級(卜20微米),傳統測溫工 具不具有如此精確之測量解析度。因此,用傳統測溫工 具難以測量一維奈米材料在某一區域之溫度差,即使測 得了也很不精確。 [0004] 物質之熱容量正比於其質量。通常,一維之奈米材料在 小尺度測溫區域内之品質很小,因此一維之奈米材料在 該區域之熱容量也很小。如果用直接接觸式之測溫方法 ,當溫度計之溫度探頭與該一維奈米材料接觸時,該一 維奈米材料之局域溫度就會被迅速之改變,直到與溫度 探測裝置接觸部分之溫度相同。而溫度探頭通常係宏觀 體,熱容量很大,在小尺度測溫區域内該一維奈米材料 098117906 表單編號A0101 第4頁/共36頁 0982030438-0 201042251 釋放之熱量對探頭溫度之改變係微乎其微。這樣,傳統 測溫方法不僅無法測量一維奈米材料之溫度,而且會嚴 重影響一維奈米材料之熱學狀態。另外,由於一維奈米 材料之尺寸报小導致被測物各點之溫差無法準確測量, 從而導致與溫差相關之熱導率之測量都無法進行。同理 —維奈米材料的熱導率測量問題,一維微米材料之熱導 率測量也存在同樣之問題。 【發明内容】 〇 [0005]有鑑於此,提供一種一維材料熱導率之測量系統及其測 量方法實為必要,該測量系統及其測量方法可測量被測 物為一維奈米材料或一維微米材料之熱導率。 [0006]本發明涉及一維材料熱導率測量系統,,用於侧量一被測 物之熱導率。該一維材料熱導率測量系統,其包括一被 測物放置裝置’、一幾何尺寸獲取模塊、’ 一拉曼光譜 特徵峰頻值獲取模塊、,一熱功率獲取模塊、,一比較201042251 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a measurement system and a measurement method, and more particularly to a one-dimensional material thermal conductivity measurement system and method. [Prior Art] [0002] Thermal conductivity is an important parameter of the thermal properties of reactive materials. Therefore, in applications such as engineering heat dissipation, it is especially important to select materials with suitable thermal conductivity, so the thermal conductivity of various materials can be accurately measured. Engineering applications are important. [0003] When the measured object whose thermal conductivity needs to be measured is a one-dimensional nano material, such as a nanowire, a single carbon nanotube, a carbon nanotube bundle or a nanocarbon pipeline, the thermal conductivity is measured. It has been difficult. Because in the thermal conductivity measurement, it is necessary to obtain the temperature difference of the measured object in a certain area. However, for one-dimensional nanomaterials, since the characteristic width of their cross-section is within 100 nm, the area where the temperature of the measured object needs to be measured is on the order of micrometers (20 micrometers), and the conventional temperature measuring tool does not have such accurate measurement. Resolution. Therefore, it is difficult to measure the temperature difference of a one-dimensional nanomaterial in a certain area with a conventional temperature measuring tool, even if it is measured, it is not accurate. [0004] The heat capacity of a substance is proportional to its mass. Generally, the quality of a one-dimensional nanomaterial in a small-scale temperature measurement region is small, so that the heat capacity of the one-dimensional nanomaterial in this region is also small. If the direct contact type temperature measurement method is used, when the temperature probe of the thermometer is in contact with the one-dimensional nano material, the local temperature of the one-dimensional nano material is rapidly changed until it contacts the temperature detecting device. The temperature is the same. The temperature probe is usually a macroscopic body with a large heat capacity. In the small-scale temperature measurement area, the one-dimensional nanomaterial 098117906 Form No. A0101 Page 4 / Total 36 page 0982030438-0 201042251 The heat released is very small for the probe temperature. . Thus, the traditional temperature measurement method can not only measure the temperature of the one-dimensional nanomaterial, but also seriously affect the thermal state of the one-dimensional nanomaterial. In addition, because the size of the one-dimensional nanomaterial is small, the temperature difference between the points of the measured object cannot be accurately measured, and the measurement of the thermal conductivity related to the temperature difference cannot be performed. In the same way, the thermal conductivity measurement of the Vennite material has the same problem as the thermal conductivity measurement of the one-dimensional micron material. SUMMARY OF THE INVENTION [0005] In view of this, it is necessary to provide a one-dimensional material thermal conductivity measuring system and a measuring method thereof, and the measuring system and the measuring method thereof can measure the measured object as a one-dimensional nano material or The thermal conductivity of a one-dimensional micron material. The present invention relates to a one-dimensional material thermal conductivity measuring system for measuring the thermal conductivity of a measured object. The one-dimensional material thermal conductivity measuring system includes a measured object placing device, a geometric size acquiring module, a Raman spectral characteristic peak frequency value acquiring module, a thermal power acquiring module, and a comparison.

* I 模塊,及一計算模塊。所述被測物放置裝置至少包括間 0 隔設置之四個電極’被測物設置於該四個電極之表面, 且被測物位於中間兩個電極之間的部分懸空設置。所述 拉曼光譜特徵峰頻值獲取模塊,用於獲取被測物在電流 作用下自加熱並達到熱平衡後其懸空部分中心點拉曼光 譜之特徵峰頻值作為初始值及被測物懸空部分任一端點 之拉曼光譜之特徵峰頻值。所述熱功率獲取模塊用於獲 取沿被測物懸空部分傳導之熱功率《所述幾何尺寸獲取 模塊用於獲取所需之被測物之幾何尺寸。所述比較模塊 用於比較被測物懸空部分中心點與任—端點之拉曼光譜 098117906 表單編號 A0101 第 5 頁/共 36 頁 0982030438-0 201042251 之特徵峰頻值之差以獲取所述被測物懸空部分中心點及 任一端點之溫差。所述計算模塊用於根據被測物懸空部 分中心點與任一端點之溫差、幾何尺寸及熱功率計算所 述被測物之熱導率。 [0007] —種一維材料熱導率測量方法,其包括以下步驟:提供 一被測物放置裝置,該被測物放置裝置至少包括間隔設 置之四個電極;獲取所需之被測物之幾何尺寸;將被測 物放置於被測物放置裝置之四個電極之表面,被測物位 於中間兩個電極之間的部分懸空設置,通過外側之兩個 電極給被測物通入恒定電流,被測物在電流之作用下自 加熱,並在一段時間後達到熱平衡;獲取被測物懸空部 _ 分中心點拉曼光譜之特徵峰頻值作為初始值及被測物懸 空部分任一端點拉曼光譜之特徵峰頻值,並比較被測物 懸空部分中心點與任一端點拉曼光譜之特徵峰頻值之差 ;獲取沿被測物懸空部分軸向傳導之熱功率;利用所述 被測物懸空部分中心點與任一端點拉曼光譜之特徵峰頻 值之差獲取所述被測物懸空部分中心點及任一端點之溫 ί ^ 差;根據被測物懸空部分中心點與任一端點之溫差、幾 何尺寸及熱功率計算所述被測物之熱導率。 [0008] 與先前技術相比較,本發明提供之熱導率測量系統及測 量方法利用非接觸之光譜測量方法可以避免具有較大熱 容量之物體與一維材料接觸,使一維材料之溫度保持穩 定,進而使測量結果更加準確。 【實施方式】 [0009] 以下將結合附圖對本發明實施例提供之一維材料熱導率 098117906 表單編號Α0101 第6頁/共36頁 0982030438-0 201042251 [0010] Ο ❹ [0011] 098117906 測量系統及其測量方法作進一步之說明。 請一併參閱圖1及圖2,為本發明實施例提供之一種熱導 率測量系統100,用於測量一被測物220之熱導率。該熱 導率測量系統1 〇 〇包括一被測物放置裝置1 〇、一幾何尺寸 獲取模塊20、一拉曼光譜特徵峰頻值獲取模塊3〇、一 功率獲取模塊40、一比較模塊50及一計算模塊6〇。所述 該被測物放置裝置10至少包括間隔設置之四個電極,被 測物2 2 0設置於該四個電極之表面,且被測物2 2 〇位於中 間兩個電極之間的部分懸空設置《所述幾何尺寸獲取模 塊20用於獲取所需之被測:物220:义幾飾愚寸:。所述拉曼光 譜特徵峰頻值獲取模塊30用於獲取被測物220在電流作用 下自加熱並達到熱平衡後其懸空部分中心點拉曼光譜之 特徵峰頻值作為初始值及被測物懸空部分任一端點之拉 曼光譜之特徵峰頻值^所述熱功率獲取模塊40用於獲取 沿被測物220懸空部分轴向傳導之熱功率》所述比較模塊 50用於比較被測物220懸空部分中心點與#一端點之拉曼 光譜之特徵峰頻值之差以獲取所述被測物220懸空部分中 心點及任一端點之溫差。所述計算模塊60用於根據被測 物220懸空部分中心點與任〆端點之溫差、幾何尺寸及熱 功率計算所述被測物220之熱導率。 所述被測物220為一維材料,該一維材料為一維奈米材料 或一維微米材料。一維奈米材料為奈米管、奈米棒、奈 米線、奈米纖維或奈米帶等。具體地,本實施例中所述 被測物2 2 0為單壁奈米碳管。 請參閱圖2,該被測物放置裝置10包括一基底111、,第 表單編號Α0101 第7頁/共36 S 0982030438 〇 [0012] 201042251 一載具1U' —第二載具1〗5、一第一絕緣層112、一第 一絕緣層113、一第一電極116、一第二電極117、一第 二電極118及一第四電極H9。所述第一載具114、第二 載具115間隔設置於基底in之表面。第一絕緣層112設 置於第一載具114之表面。第二絕緣層113設置於第二載 具115之表面。本實施例中,所述第一載具114、第二載 具115間隔並排設置於基底hi之表面,且第一載具114 、第一載具115及基底111 一體成型。所述四個電極間隔 設置,被測物220與所述四個電極均接觸,且被測物22〇 位於中間兩個電極之間的部分懸空設置。本實施例中, 所述第一電極116及第二電極117間隔並琳設置在第一絕 緣層112之表面。所述第三電極丨18及第四電極119間隔 並排設置在第二絕緣層113之表面、所惠被測物220之一 端放置在所述第一電極116及第二電極117之表面,其另 一端放置在所述第三電極118及第四電極119之表面。所 述一維被測物220垂直於被測物放置裝置1〇之四個電極。 所述第一電極116及第四電極lig通過一電源(圖未示)及 一電流表(圖未示)串聯連接’與被測物220共同組成一回 路。所述第二電極117及第三電極118連接一電壓表。此 時,與第二電極117、第三電極118相接觸之兩個點成為 被測物220懸空部分之兩個端點。被測物220懸空部分之 第一端點標記為、,第二端點標記為、,相對應地,這 兩個端點之中心點標記為〇。 所述絕緣層113之材料為絕電、絕熱材料。本實施例中, 所述絕緣層213為二氧化矽。 098117906 表單編號A0101 第8頁/共36頁 0982030438-0 [⑻ 13] 201042251 [0014] [0015] 所迷第一電極U6、第二電極117、第三電極11 8及第四 $極119之材料可以為鉬、鉑或鎳等。在本實施例中所述 電極116、第二電極117、第三電極118及第四電極 119為鉬電極。 所述幾何尺寸獲 取模塊20,用於測量被測物220懸空部分 之長度AL, 及被測物220之橫截面積等幾何尺寸。其中* I module, and a calculation module. The object placement device includes at least four electrodes disposed between the spacers. The object to be tested is disposed on the surface of the four electrodes, and a portion of the object to be tested between the two electrodes is suspended. The Raman spectral characteristic peak frequency value obtaining module is configured to obtain a characteristic peak frequency value of a Raman spectrum of a suspended point central point of the suspended object after self-heating by a current and a thermal equilibrium as an initial value and a suspended portion of the measured object The characteristic peak frequency of the Raman spectrum at either end. The thermal power acquisition module is configured to obtain thermal power transmitted along a suspended portion of the object to be tested. The geometry acquisition module is configured to acquire a desired geometric size of the measured object. The comparison module is configured to compare the difference between the characteristic peak frequency values of the center point of the suspended portion of the test object and the Raman spectrum of the any end point, 098117906, Form No. A0101, Page 5 of 36, 0982030438-0 201042251, to obtain the The temperature difference between the center point and any end point of the suspended portion of the object. The calculation module is configured to calculate a thermal conductivity of the measured object according to a temperature difference, a geometric size, and a thermal power of a center point and an end point of the suspended portion of the measured object. [0007] A one-dimensional material thermal conductivity measuring method, comprising the steps of: providing a measured object placing device, the measuring object placing device comprising at least four electrodes arranged at intervals; obtaining a desired object to be tested Geometry; the object to be tested is placed on the surface of the four electrodes of the device to be tested, and the portion of the object to be measured between the two electrodes is suspended, and the two electrodes on the outside pass a constant current to the object to be tested. The measured object self-heats under the action of current, and reaches the heat balance after a period of time; obtains the characteristic peak frequency value of the Raman spectrum of the dangling point of the measured object as the initial value and any end point of the suspended part of the measured object The characteristic peak frequency value of the Raman spectrum, and comparing the difference between the characteristic peak frequency value of the center point of the suspended portion of the measured object and the Raman spectrum of any end point; obtaining the thermal power transmitted along the axial direction of the suspended portion of the measured object; The difference between the characteristic peak frequency of the floating point of the measured object and the Raman spectrum of any end point obtains the temperature difference between the center point and any end point of the suspended portion of the measured object; according to the center of the suspended portion of the measured object The thermal conductivity of the test object is calculated from the temperature difference, the geometric size, and the thermal power of the point. [0008] Compared with the prior art, the thermal conductivity measuring system and the measuring method provided by the present invention can avoid the contact of an object having a large heat capacity with a one-dimensional material by using a non-contact spectral measuring method, so that the temperature of the one-dimensional material is stable. To make the measurement results more accurate. Embodiments [0009] Hereinafter, a dimensional material thermal conductivity 098117906 will be provided in accordance with an embodiment of the present invention with reference to the accompanying drawings. Form No. 1010101 Page 6/36 pages 0992030438-0 201042251 [0010] Ο ❹ [0011] 098117906 Measurement System And its measurement methods are further explained. Referring to FIG. 1 and FIG. 2, a thermal conductivity measuring system 100 for measuring the thermal conductivity of a measured object 220 is provided. The thermal conductivity measuring system 1 〇〇 includes a measured object placing device 1 , a geometric size acquiring module 20 , a Raman spectral characteristic peak frequency obtaining module 3 , a power acquiring module 40 , a comparing module 50 , and A calculation module 6〇. The object placement device 10 includes at least four electrodes disposed at intervals, and the object to be tested 220 is disposed on the surface of the four electrodes, and the portion of the object to be measured 2 2 悬 between the two electrodes is suspended. The geometric dimension acquisition module 20 is configured to obtain the required measured object: the object 220: The Raman spectral characteristic peak frequency value obtaining module 30 is configured to obtain the characteristic peak frequency value of the Raman spectrum of the dangling portion of the datum portion after the self-heating of the measured object 220 and the thermal equilibrium is reached as an initial value, and the measured object is suspended. The characteristic peak frequency value of the Raman spectrum of any of the endpoints is used to obtain the thermal power conducted along the axial portion of the suspended portion of the object under test 220. The comparison module 50 is configured to compare the object to be tested 220. The difference between the characteristic peak frequency values of the Raman spectrum of the dangling portion center point and the #-end point is obtained to obtain the temperature difference between the center point and any end point of the suspended portion of the object to be tested 220. The calculation module 60 is configured to calculate the thermal conductivity of the object to be tested 220 according to the temperature difference, the geometric size, and the thermal power of the center point and the end point of the suspended portion of the object 220. The object to be tested 220 is a one-dimensional material, and the one-dimensional material is a one-dimensional nano material or a one-dimensional micro material. The one-dimensional nanomaterial is a nanotube, a nanorod, a nanowire, a nanofiber or a nanobelt. Specifically, in the embodiment, the object to be tested 2 2 0 is a single-walled carbon nanotube. Referring to FIG. 2, the DUT 10 includes a substrate 111, a form number Α0101, a page 7/36 S 0982030438 〇[0012] 201042251 A carrier 1U'-a second carrier 1 〖5, a The first insulating layer 112, a first insulating layer 113, a first electrode 116, a second electrode 117, a second electrode 118, and a fourth electrode H9. The first carrier 114 and the second carrier 115 are spaced apart from each other on the surface of the substrate in. The first insulating layer 112 is disposed on the surface of the first carrier 114. The second insulating layer 113 is disposed on the surface of the second carrier 115. In this embodiment, the first carrier 114 and the second carrier 115 are arranged side by side on the surface of the substrate hi, and the first carrier 114, the first carrier 115 and the substrate 111 are integrally formed. The four electrodes are spaced apart, and the object to be tested 220 is in contact with the four electrodes, and a portion of the object to be tested 22 located between the two electrodes is suspended. In this embodiment, the first electrode 116 and the second electrode 117 are spaced apart from each other and disposed on the surface of the first insulating layer 112. The third electrode 丨18 and the fourth electrode 119 are disposed side by side on the surface of the second insulating layer 113, and one end of the object to be tested 220 is placed on the surface of the first electrode 116 and the second electrode 117. One end is placed on the surface of the third electrode 118 and the fourth electrode 119. The one-dimensional object to be tested 220 is perpendicular to the four electrodes of the device to be placed. The first electrode 116 and the fourth electrode lig are connected in series with the object to be tested 220 by a power source (not shown) and an ammeter (not shown) to form a circuit. The second electrode 117 and the third electrode 118 are connected to a voltmeter. At this time, the two points in contact with the second electrode 117 and the third electrode 118 become the two end points of the suspended portion of the object to be tested 220. The first end point of the suspended portion of the object to be tested 220 is marked as , and the second end point is marked as , and correspondingly, the center points of the two end points are marked as 〇. The material of the insulating layer 113 is an electrically insulating and heat insulating material. In this embodiment, the insulating layer 213 is cerium oxide. 098117906 Form No. A0101 Page 8/36 Page 0992030438-0 [(8) 13] 201042251 [0015] [0015] The materials of the first electrode U6, the second electrode 117, the third electrode 11 8 and the fourth $ pole 119 It may be molybdenum, platinum or nickel. In the present embodiment, the electrode 116, the second electrode 117, the third electrode 118, and the fourth electrode 119 are molybdenum electrodes. The geometry acquisition module 20 is configured to measure the length AL of the suspended portion of the object to be tested 220, and the geometrical dimensions such as the cross-sectional area of the object to be tested 220. among them

被挪物2 2 0懸空部分之長度△[即為被測物放置裝置1 〇 之第二電極117及第三電極118之間之距離。所述幾何尺 寸獲取模塊20通過被測物放置裝置1〇、顯微鏡來實現其 剛量功能。如果所述被測物220之橫截面為圓形,則測量 圓之直徑d,可得圓形橫載面之面積S=0. 257r(i2。如果所 述被測物220之橫截面為圓環形,則測量圓環橫截面之外 徑R及環壁厚度b,可得圓環橫截面之面積The length Δ of the suspended portion of the object 2 2 is the distance between the second electrode 117 and the third electrode 118 of the device to be placed 1 . The geometric size acquisition module 20 realizes its function by the measuring object placing device 1 and the microscope. If the cross-section of the object to be tested is circular, the diameter d of the circle is measured, and the area of the circular cross-sectional surface is S=0. 257r (i2. If the cross-section of the object 220 is a circle Ring, measure the outer diameter R of the cross section of the ring and the thickness b of the ring wall to obtain the area of the cross section of the ring

。在本實施例中,所述被測物220為單壁奈米碳管,所述 奈米碳管懸空f分之長度. In this embodiment, the object to be tested 220 is a single-walled carbon nanotube, and the length of the carbon nanotube is suspended by f.

AL 通過掃描電子顯微鏡測量,得到為3〇微米。所述央米碳 管之橫截面為圓環形,通過原子力顯微鐘(Λϋι,、' 佩規(AFM)測量所 述奈米碳管之外徑R,R為1. 8奈米。對於單壁$米山管 壁厚b近似為一個常數’ b=0.34奈米。田 固此,所獲取之被 測物2 2 0之面積 098117906AL was measured by scanning electron microscopy to give a thickness of 3 μm. The inner diameter of the carbon nanotubes is 1. 8 nm. For the inner diameter of the carbon nanotubes, the outer diameter R of the carbon nanotubes is measured by an atomic force microscopy (A, the 'AFM). The wall thickness of the single-walled m-meter tube is approximately a constant 'b=0.34 nm. Tian Gu, the area of the measured object 2 2 0 098117906

第9頁/共36頁 表單編號A0101 0982030438-0 201042251 [0016] 所述拉曼光譜特徵峰頻值獲取模塊30,用於獲取被測物 2 2 0在電流作用下自加熱並達到熱平衡後其懸空部分中心 點〇拉曼光谱之特徵峰頻值作為初始值及被測物2 2 〇懸空 部分任一端點、或、之拉曼光譜之特徵峰頻值。所述拉 曼光譜特徵峰頻值獲取模塊30通過被測物放置裝置10、 測量電路、拉曼光譜儀及一個真空腔體230獲取上述資料 依據被測物220材料之不同,所需測量之拉曼光譜之特 徵峰頻值也不同。對於奈米破管而言,所需測量之拉曼 光譜之特徵峰頻值為其(;峰。所述被測物22〇 '被測物放 置裝置10及測量電路位於真聳腔體2 3 0中-。該真空腔體 230為一真空石英管或具有石英窗之不銹鋼真空腔體。 所述被測物220位於被測物放置裝置10之第一電極116、 第二電極117、第三電極118及第四電極119之表面。電 "il經由第一電極116流入被測物22〇並經由第四電極jig 流出被測物220。第二電極11 7及第三電極118連接電壓 表以測量被測物220懸空部分之電壓[j。所述真空腔體230 内之真空度為10 4托,因此被測物22〇通過周圍空氣傳導 之熱能可以忽略。相對於加熱功率,所述被測物2 2 〇之紅 外輻射能也很微小,從而可確保被測物2 2 〇懸空部分之熱 學狀態不變。被測物220在電流之作用下自加熱,加熱一 段時間後,被測物220懸空部分上之各點有了穩定溫度分 佈,即被測物220之中間溫度高,兩邊溫度低。因此,沿 被測物220軸向傳導之熱功率就等於電流產生之總熱功率 。通過所述拉曼光譜儀獲取被測物220懸空部分之任一端 098117906 表單編號Α0101 第10頁/共36頁 0982030438-0 201042251 點L〗或1^及被測物220懸空部分中心點〇之拉曼光譜。所 述拉曼光譜中之複數個波峰中,峰值最高之為其6峰。本 實施例中,被測物220為單壁奈米碳管,所需測量之特徵 峰為奈米碳管之拉曼光譜之G峰頻值,採用514. 5奈米之 雷射作為激發光源。請參閱圖3,單壁奈米碳管懸空部分 中〜點0之拉曼光譜G峰對應之拉曼頻值係1567. 6cffl-i ’ 壬—端點處、或、之拉曼光譜G峰對應之拉曼頻值係 1577.7 cm-1 » ❹ #述熱功率獲取模塊40可絲獲取沿制物220懸空部分 向傳導之熱功率。所述熱功率獲取模4〇通過被測物放 - =1G、測量電路及真空腔體23Q實現。所述被測物 内告被測物放置裝置1〇及測量電路均位於真空腔體 入=通過第-電極116及第四電極119給被測物⑽通 電机後,所產生之總熱能為沿所述被測物22〇軸向傳導 =熱量、紅外轄射能及周圍空氣傳導之熱能之總及。本 图施例中真空腔體讓之真空度為10-4托,因此通過周 空氣傳導之熱能可以忽略'本實施例中通入被測物220 電机I為0.298微安,由第二i極117及第三電極118連 之電壓表測得之被測物220懸空部分之電壓1]為1. 175 伏,從而可計算加熱功率為 ^外轄射能卩叫…⑽^化’此時應用斯蒂芬—玻 爾茲曼定律(Stef an-Bol tzmann)F= σ τ4,其中 σ 098117906 米5’ 67 xl0_8ff/(m2 · κ4)係一個常數,s係懸空單壁奈 ^之表面積,S=7rdx2L。假定整個懸空單壁奈米碳 0982030 單鵠號A0101 第11頁/共36頁 ΠΟ) 201042251 [0018] [⑻ 19] [0020] 098117906 管之溫度為700K,經計算紅外輻射能為Pradiati〇n =3. 15xlO_9W ’僅係加熱功率之百分之一。因此,當懸空 之被測物220通過電流自加熱’產生之總熱能P=U1 就等於沿被測物220懸空部分轴向傳導之熱量。這樣軸向 傳導之熱功率就等於電流加熱之功率卜^。 所述比較模塊50用於獲取所述被測物220中心點0及任一 端點1^或19之溫差。利用被測物220之拉曼光譜特徵峰頻 值隨溫度變化曲線及被測物220懸空部分之中心點〇及任 一端點h或1^之拉曼光譜中孓特徵峰頻值之差得到被測 物220中心點0及任一端點1^或1^2之間之溫度,差。本實施 例中,請參閱圖8,被測物220為單壁奈米碳管,奈米碳 管之拉曼光譜中之G峰頻值隨溫度變化之曲線為一直線, 該直線之斜率為K。因此’所述奈米碳管懸空部分中心點 0及任一端點、或、之顇之溫差可滿足以下關係式:AT = ΚΔΟ 其中,K為奈米*反管之拉曼光譜之(j峰頻值隨溫度變化之 直線之斜率;ΔΤ為奈米碳管懸空部分中心點〇及任一端 點[1或、之溫差;Δ(ϊ為奈米碳管懸空部分中心點〇及任 一端點L,1L2之G峰頻值差。本實施例中,經測量單壁奈 米碳管懸空部分中心點G及任1點、或、之拉曼光譜中 G峰頻值之差異=1567· 6cm—i_1577. 7cm2-1=_1〇 lcm_】 ,單壁奈米碳管之拉曼光譜之G峰頻值隨溫度變化之直線 之斜率K = -0.0257 cnf^K»因此,奈米碳管懸空部分中 第12頁/共36頁 表單編號Α0101 0982030438-0 201042251 心點〇及任一端點h或、之溫度差△ Τ=(-10· lcm-1 )(-0. 0257 ¢:^/1() = 3931(。 [0021] 所述計算模塊60用於計算所述被測物220熱導率,熱導率 之計算滿足以下關係式: [0022] 其中’ k為被測物220之熱導率;u為被測物220懸空部分 之電壓;I為流過被測物220之電流;為被測物220懸 空部分之長度;S為被測物220之橫截面積;ΔΤ為被測 物220懸空部分之中心點0及任一端點、或1^之溫差。本 實施例中,將上述各個模塊分別獲取之奈米碳管之橫截 面面積S=TT(2R-b)b=l. 1084 ΤΓ 平方奈米、ΔΤ =393K、 △ L= 30微米、及P=UI = 3.5xl〇-7w代入熱專率所滿足 之關係式中,得到所述奈米破管之.熱導.率.為: [0023] 因此,單壁奈米碳管之熱導率為2400W/m K。 [0024] 請參閱圖4,為所述一維材料熱導率測量本法流程圖。該 . ....故 1 ' f 熱導率測量方法包括以下步驟: [0025] 步驟S101,提供一被測物置裝置1〇,該被測物放置裝 置10至少包括間隔設置之四個電極。 [0026] 步驟S102,獲取所需之被測物220之幾何尺寸。 [0027] 步驟S103,將被測物220放置於被測物放置裝置10四個 電極之表面,被測物220位於中間兩個電極之間的部分懸 空設置,通過外侧兩個電極給被測物220通入恒定電流’ 被測物220在電流之作用下自加熱,並在一段時間後達到 熱平衡。 0982030438-0 098117906 表單編號A0101 第13頁/共36頁 201042251 [0028] [0029] [0030] [0031] [0032] 步驟S104,獲取被測物220懸空部分中心點0及任一端點 、或、之拉曼光譜之特徵峰頻值,並比較被測物220懸空 部分中心點〇與任一端點、或、之拉曼光譜之特徵峰頻值 之差。 步驟S105 ’獲取沿被測物220懸空部分軸向傳導之熱功率 〇 步驟S106,利用所述被測物220懸空部分中心點〇與任一 端點\或1^拉曼光譜之特徵峰頻值之差獲取所述被測物 220懸空部分中心點〇及任一端點^或^之溫差; 步驟S107,根據被測物220懸空部分中心點〇與任一端點 ^或^之溫差、幾何尺寸及熱功率計算所述被測物22〇之 熱導率。 - 在步驟S101中’該被測物放置裝置10包括一基底lu、 —第一載具114、一第二載具115、一第一絕緣層112、 —第二絕緣層113、一第一電極116、一第二電極117、 一第三電極118及一第四電極119。所述第一載具114、 第一載具115間隔設置於基底111之表面。本實施例中所 述第一載具114、第二載具115間隔並排設置於基底^ 之表面。第一絕緣層112設置於第一載具114之表面。第 二絕緣層113設置於第二載具115之表面。本實施例中第 一載具114、第二載具115及基底111 一體成型。所述四 個電極間隔設置,被測物2 2 0與所述四個電極均接觸,且 被測物220位於中間兩個電極之間的部分懸空設置。本實 施例中’所述第一電極116及第二電極117間隔並排設置 098117906 表單編號A0101 第14頁/共36頁 0982030438-0 201042251 在第一絕緣層112之表面。所述第三電極118及第四電極 119間隔並排設置在第二絕緣層113之表面。 [0033] 在步驟S102中,所需獲取之被測物220之幾何尺寸為被測 物220懸空部分之長度及被測物220之橫截面積。其中, 被測物220懸空部分之長度Page 9 of 36 Form No. A0101 0982030438-0 201042251 [0016] The Raman spectral characteristic peak frequency value acquisition module 30 is configured to acquire the measured object 2 2 0 self-heating under the action of current and reach thermal equilibrium. The characteristic peak frequency value of the Raman spectrum of the center point of the suspended portion is taken as the initial value and the characteristic peak frequency value of the Raman spectrum of any end point of the object 2 2 〇 floating portion. The Raman spectral characteristic peak frequency value obtaining module 30 obtains the above data according to the material of the measured object 220 by the object placing device 10, the measuring circuit, the Raman spectrometer and a vacuum chamber 230, and the required Raman is measured. The characteristic peak frequency values of the spectrum are also different. For the nanotube, the characteristic peak frequency of the Raman spectrum to be measured is its (peak. The measured object 22 〇 'the object placement device 10 and the measurement circuit are located in the true cavity 2 3 The vacuum chamber 230 is a vacuum quartz tube or a stainless steel vacuum chamber having a quartz window. The object to be tested 220 is located at the first electrode 116, the second electrode 117, and the third of the object placing device 10. The surface of the electrode 118 and the fourth electrode 119. The electric current flows into the object to be tested 22 via the first electrode 116 and flows out of the object to be tested 220 via the fourth electrode jig. The second electrode 11 7 and the third electrode 118 are connected to the voltmeter. To measure the voltage of the suspended portion of the object to be tested 220 [j. The degree of vacuum in the vacuum chamber 230 is 10 4 Torr, so the heat energy transmitted by the object 22 〇 through the surrounding air can be neglected. With respect to the heating power, The infrared radiant energy of the measured object 2 2 也 is also very small, so as to ensure that the thermal state of the suspended portion of the measured object 2 2 不变 is unchanged. The measured object 220 self-heats under the action of the current, after being heated for a period of time, is measured Each point on the suspended portion of the object 220 has a stable temperature distribution, that is, The intermediate temperature of the object 220 is high, and the temperature on both sides is low. Therefore, the thermal power transmitted along the axial direction of the object to be tested 220 is equal to the total heat power generated by the current. The Raman spectrometer is used to obtain either end of the suspended portion of the object to be tested 220. 098117906 Form No. 1010101 Page 10/36 Page 0992030438-0 201042251 Point L or 1^ and the Raman spectrum of the center point of the suspended portion of the object 220. The highest peak of the complex peaks in the Raman spectrum 5纳米。 In the present embodiment, the measured object 220 is a single-walled carbon nanotube, the characteristic peak to be measured is the carbon peak frequency of the Raman spectrum of the carbon nanotubes, using 514.5 nm The laser is used as the excitation source. Please refer to Figure 3. The Raman spectrum of the single-walled carbon nanotube in the suspended portion of the Raman spectrum corresponds to the Raman frequency system 1567. 6cffl-i ' 壬 - the end point, or The Raman frequency value corresponding to the G-peak of the Raman spectrum is 1577.7 cm-1 » ❹ # The thermal power acquisition module 40 can obtain the thermal power transmitted along the suspended portion of the workpiece 220. The thermal power acquisition module 4〇 It is realized by the object to be measured - =1G, the measuring circuit and the vacuum chamber 23Q. The test object placement device 1 and the measurement circuit are both located in the vacuum cavity. After the first electrode 116 and the fourth electrode 119 pass the test object (10) to the motor, the total thermal energy generated is along the object 22 〇Axial conduction = the sum of heat, infrared ray energy and ambient heat conduction. In the example of this figure, the vacuum chamber gives a vacuum of 10-4 Torr, so the heat energy transmitted through the air can be ignored. In the embodiment, the motor of the test object 220 is 0.298 microamperes, and the voltage of the suspended portion of the test object 220 measured by the voltmeter connected to the second i pole 117 and the third electrode 118 is 1. 175 volts. Therefore, the heating power can be calculated as ^the external eigen energy squeaking...(10)^化' At this time, the Stef an-Bol tzmann law (F = σ τ4) is applied, where σ 098117906 m 5' 67 xl0_8ff/ (m2 · κ4) is a constant, s is the surface area of a single-walled suspension, S = 7rdx2L. Assume that the entire suspended single-walled nanocarbon 0902030 single nickname A0101 page 11 / 36 pages ΠΟ) 201042251 [0018] [(8) 19] [0020] 098117906 The temperature of the tube is 700K, the calculated infrared radiation energy is Pradiati〇n = 3. 15xlO_9W 'only one percent of the heating power. Therefore, when the suspended object 220 is subjected to self-heating by current, the total thermal energy P = U1 is equal to the amount of heat conducted along the axial portion of the suspended portion of the object 220. The thermal power of the axial conduction is equal to the power of the current heating. The comparison module 50 is configured to acquire a temperature difference between the center point 0 of the object to be tested 220 and any one of the terminals 1 or 19. The difference between the peak frequency value of the Raman spectrum characteristic of the measured object 220 and the temperature point curve and the center point 悬 of the suspended portion of the object 220 and the peak frequency value of the 孓 characteristic of the Raman spectrum of any end point h or 1^ are obtained. The temperature between the center point 0 of the object 220 and either end point 1^ or 1^2 is the difference. In this embodiment, referring to FIG. 8 , the object to be tested 220 is a single-walled carbon nanotube. The curve of the peak value of the G peak in the Raman spectrum of the carbon nanotube is a straight line, and the slope of the line is K. . Therefore, the temperature difference between the center point 0 and any end point of the suspended portion of the carbon nanotube can be satisfied by the following relationship: AT = ΚΔΟ where K is the Raman spectrum of the nanometer *reverse tube (j peak The slope of the line whose frequency changes with temperature; ΔΤ is the center point of the suspended portion of the carbon nanotube and any end point [1 or the temperature difference; Δ(ϊ is the center point of the suspended portion of the carbon nanotube and any end point L The difference of the G peak frequency value of 1L2. In this embodiment, the difference between the G peak frequency value of the Raman spectrum of the center point G of the single-walled carbon nanotube and the 1st point or the Raman spectrum is 1567·6cm— I_1577. 7cm2-1=_1〇lcm_], the slope of the straight line of the G-peak frequency of the Raman spectrum of the single-walled carbon nanotube with temperature changes K = -0.0257 cnf^K» Therefore, the carbon nanotube is suspended in the portion Page 12 of 36 Form No. Α0101 0982030438-0 201042251 The temperature difference between the heart point and any end point h or △ Τ = (-10· lcm-1 ) (-0. 0257 ¢: ^/1() = 3931 (. [0021] The calculation module 60 is used to calculate the thermal conductivity of the measured object 220, and the calculation of the thermal conductivity satisfies the following relationship: [0022] where 'k is the heat of the measured object 220 Rate; u is the voltage of the suspended portion of the test object 220; I is the current flowing through the test object 220; the length of the suspended portion of the test object 220; S is the cross-sectional area of the test object 220; ΔΤ is the measured object The temperature difference between the center point 0 of the suspended portion and any one end point, or 1^. In this embodiment, the cross-sectional area of the carbon nanotubes obtained by each of the above modules is S=TT(2R-b)b=l. 1084 平方 square nanometer, ΔΤ = 393K, △ L = 30 μm, and P = UI = 3.5xl 〇 -7w substituted into the relationship of the thermal specific rate, the thermal conductivity rate of the nano tube is obtained. [0023] Therefore, the thermal conductivity of the single-walled carbon nanotube is 2400 W/m K. [0024] Please refer to FIG. 4, which is a flow chart of the method for measuring the thermal conductivity of the one-dimensional material. Therefore, the method of measuring 1 'f thermal conductivity includes the following steps: [0025] Step S101, a device 1 is provided, and the device to be tested 10 includes at least four electrodes arranged at intervals. In step S102, the required geometric shape of the object to be tested 220 is obtained. [0027] Step S103, the object to be tested 220 is placed on the surface of the four electrodes of the object to be tested device 10, and the object to be tested 220 A portion of the middle electrode is suspended, and a constant current is applied to the object to be tested 220 through the two outer electrodes. The object 220 is self-heated by the current and reaches a thermal equilibrium after a period of time. 0982030438-0 098117906 Form No. A0101 Page 13 / Total 36 Page 201042251 [0028] [0032] Step S104, obtaining the center point 0 and any end point of the suspended portion of the object to be tested 220, or Raman The characteristic peak frequency value of the spectrum, and compares the difference between the characteristic peak frequency value of the center point 悬 of the suspended portion of the object 220 and the Raman spectrum of either end point or. Step S105 'Acquiring the thermal power transmitted along the axial portion of the suspended portion of the object to be tested 220, step S106, using the measured object 220 to vacate a portion of the central point 〇 with the characteristic peak frequency value of any end point or 1 ^ Raman spectrum The difference between the center point of the suspended portion of the measured object 220 and the temperature difference of any of the terminals ^ or ^ is obtained; Step S107, according to the temperature difference, geometric size and heat of the center point 悬 of the object to be tested 220 and any end point ^ or ^ The thermal conductivity of the measured object 22 is calculated. - In step S101, the device to be tested 10 includes a substrate lu, a first carrier 114, a second carrier 115, a first insulating layer 112, a second insulating layer 113, and a first electrode. 116, a second electrode 117, a third electrode 118 and a fourth electrode 119. The first carrier 114 and the first carrier 115 are spaced apart from each other on the surface of the substrate 111. In this embodiment, the first carrier 114 and the second carrier 115 are arranged side by side on the surface of the substrate. The first insulating layer 112 is disposed on a surface of the first carrier 114. The second insulating layer 113 is disposed on the surface of the second carrier 115. In this embodiment, the first carrier 114, the second carrier 115, and the substrate 111 are integrally formed. The four electrodes are spaced apart, and the object to be tested 220 is in contact with the four electrodes, and a portion of the object to be tested 220 between the two electrodes is suspended. In the present embodiment, the first electrode 116 and the second electrode 117 are arranged side by side at the same time. 098117906 Form No. A0101 Page 14/36 Page 0982030438-0 201042251 On the surface of the first insulating layer 112. The third electrode 118 and the fourth electrode 119 are disposed side by side on the surface of the second insulating layer 113. [0033] In step S102, the geometric shape of the object to be detected 220 to be acquired is the length of the suspended portion of the object to be tested 220 and the cross-sectional area of the object to be tested 220. Wherein, the length of the suspended portion of the object to be tested 220

AL Ο ο 即為被測物放置裝置10之第二電極117及第三電極118之 間之距離。本實施例中,單壁奈米碳管之橫截面為一圓 環形,圓環之橫截面之計算公式為S=tt (2R-b)b,其中R 為單壁奈米碳管之外徑,b為單壁奈米碳管之壁厚。然而 ,對於單壁奈米碳管而言,b近似為一常數,b=0. 34奈米 。因此僅需獲取單壁奈米碳管之懸空部分之長度與外徑 。本實施例中,所述獲取單壁奈米碳管之長度及外徑之 方法包括以下步驟:提供放置有奈米碳管之被測物放置 裝置10 ;通過原子力顯微鏡拍攝奈米碳管之原子力顯微 鏡照片,使得奈米碳管懸空部分全部被清晰地顯現在照 片中;通過掃描電子顯微鏡拍攝奈米碳管之掃描電子顯 微鏡照片,使得奈米碳管懸空部分全部被清晰地顯現在 照片中;測量奈米碳管之原子力顯微鏡照片中奈米碳管 之外徑並利用照片之比例尺計算奈米碳管之外徑R ;測量 奈米碳管之掃描電子顯微鏡照片中奈米碳管懸空部分之 長度並利用照片之比例尺獲取奈米碳管懸空部分之長度AL Ο ο is the distance between the second electrode 117 and the third electrode 118 of the device to be placed 10 . In this embodiment, the cross-section of the single-walled carbon nanotube is a circular ring, and the cross-section of the ring is calculated as S=tt (2R-b)b, where R is a single-walled carbon nanotube. The diameter of b is the wall thickness of a single-walled carbon nanotube. However, for a single-walled carbon nanotube, b is approximately a constant, b = 0.34 nm. Therefore, it is only necessary to obtain the length and outer diameter of the suspended portion of the single-walled carbon nanotube. In the embodiment, the method for obtaining the length and the outer diameter of the single-walled carbon nanotube includes the following steps: providing a device to be placed 10 with a carbon nanotube; and recording the atomic force of the carbon nanotube by an atomic force microscope Microscopic photographs, so that the suspended portion of the carbon nanotubes are all clearly visible in the photograph; scanning electron micrographs of the carbon nanotubes are taken by scanning electron microscopy, so that the suspended portions of the carbon nanotubes are all clearly visible in the photograph; Measure the outer diameter of the carbon nanotube in the atomic force microscope photograph of the carbon nanotube and calculate the outer diameter R of the carbon nanotube by using the scale of the photograph; measure the suspended portion of the carbon nanotube in the scanning electron microscope photograph of the carbon nanotube Length and use the scale of the photo to obtain the length of the suspended portion of the carbon nanotube

AL 。本實施例中,所述奈米碳管懸空部分之長度為30微米 098117906 ,奈米碳管之外徑為1. 8奈米。因此,奈米碳管之橫截面 表單編號A0101 第15頁/共36頁 0982030438-0 201042251 積 ^ = — i?)& = 1.1084Jr 平方奈米。 [0034] 在步驟Sl〇3中,所述被測物22〇之一端放置在所述第一電 極116及第二電極117之表面,其另一端放置在所述第三 電極118及第四電極u 9之表面。在這裡還需要說明的係 ,當將被測物220放置在所述被測物放置裝置1〇上時,與 第一電極117、第二電極丨18相接觸之兩個點成為被測物 220懸空部分之兩個端勒。通過第一電極116及第四電極 119給被測物220輸入電流。被測物22〇在電流作用下開 始自加熱並在一段時間後達到.熱平衡》測物220達到熱 平衡後被測物2 2 0之各點上有了穩定溫度·分佈,即中間溫 度尚,兩邊溫度低。本實施例中在所述被測物放置裝置 10之四個電極之表面設置單根單壁奈米碳管,該單根單 壁奈米碳管之一端位於被測物放置裝置1〇之第一電極U6 及第二電極117,另一端位於被測物放置裝置丨〇之第三電 極118及第四電極220。被測..物220位於第二電極η?及第 三電極118之間之部分懸空設置。本實施例中,單壁奈米 碳管垂直於被測物放置裝置10之四個電極。本實施例中 ,如圖5所示為在所述被測物放置裝置10之四個電極之表 面設置單根單壁奈米碳管之製備方法流程圖,其具體包 括以下步驟: [0035] 步驟S2 01,在所述被測物放置裝置1 0之臨近第一電極 116或臨近第四電極119之一側提供一二氧化矽基底,並 098117906 表單編號Α0101 第16頁/共36頁 0982030438-0 201042251 [0036] 將二者置於一反應室中。 步驟S202,提供濃度為10 作為催化劑之前驅體。由於所採用 摩爾/升之氣化鐵溶液 氯化鐵溶液之濃度較 低’因此可以保證在四個電極之表面生長單根奈米碳管 。本實施例中,於基底上生長之奈米碳管為單壁奈米碳 管0 [0037]Ο [0038] ❹ [0039] [0040] 步驟S203,將上述氣化鐵溶液加熱至95(rc,與氫氣及 氦氣之混合氣體形成催化劑氣體並以6〇_2〇〇立方釐米/分 之速率通入反應室中。 步驟S204,通入氫氣及甲烷作,為碳源氣芩混合氣體,從 而在被測物放置裝置10之四丨電根奈米 碳管。在所述被測物放置裝置10上生根奈米碳管時 ,可通過控制破源氣之氣流方向使該奈米碳管傾倒在所 述被測物放置裝置10之四個電極之表面。由於單根奈米 碳管之周圍沒有其他支撐,因此在碳源歲;之作用下很容 易傾倒。 · 可選擇地’所述於被測物放置裝置10之四個電極之表面 設置奈米碳管之方法可以為將製備好之單壁奈米碳管直 接放置於被測物放置裝置10之四個電極之表面。 在步驟S104中,請參閱圖6,獲取被測物220懸空部分中 心點0及任一端點1^或1^之拉曼光譜之特徵峰頻值之方法 包括圖6所示以下步驟: 步驟S301,將所述放置有被測物220之被測物放置裝置 10及測量電路置於一真空腔體230中並將所述真空腔體 098117906 表單編號A0101 第Π頁/共36頁 0982030438-0 [0041] 201042251 230抽真空,使被測物放置裝置10及被測物220處於真空 狀態。被測物220在電流自加熱一段時間後達到熱平衡。 [0042] 步驟S302 ’通過拉曼雷射照射被測物22〇懸空部分之中心 點0及任一端點、或、,獲取被測物220懸空部分中心點〇 及任一端點或、之拉曼光譜特徵峰頻值。對被測物22〇 懸空部分中心點〇及任一端點L丨或L 2之測量均進行複數次 測量’即進行三次或三次以上之測量,取複數次測量結 果之平均值。最終獲取之被測物220懸空部分中心點〇及 任一端點1^或1^之拉曼光譜特徵峰頻值為至少三次以上 測量所得結果之平均值。所需獲取之特徵峰頻值依據被 測物220之材料不同而不同。對於奈米碳管所需獲取之特 徵峰頻值為其G峰頻值。獲取奈米碳管之懸空部分中心點 0及任一端點1^或1^之拉曼光譜,拉曼光譜由複數個波峰 組成’其中峰值最高的為其G峰。請參閱圖3,單壁奈米 碳管懸空部分中心點〇之拉曼光譜G峰對應之拉曼頻值係 1567. 6αη_1,任一端點處l或L之拉曼光譜G峰對應之 1 L· 拉曼頻值係1577. 7 cm_1。 [0043] 步驟S105中,在被測物放置裝置1〇中電流由第一電極 116流入被測物220,通過第四電極119流出。由於被測 物220位於第二電極in及第三電極118之間之部分懸空 設置’因此通過第二電極117及第三電極118連接電壓表 可測量被測物220懸空部分之電壓U。被測物220在電流I 之作用下,溫度逐漸升高。被測物2 2 0由電流加熱產生之 熱量主要沿著材料懸空部分之中心點0向兩侧傳導。經過 一段時間後,被測物220懸空部分上之各點有了穩定溫度 098117906 表單編號A0101 第18頁/共36頁 0982030438-0 201042251 分佈,即中間溫度高,兩邊溫度低。被測物2 2 〇懸空部分 加熱功率滿足關係式:P=UI。該被測物220懸空部分加熱 功率即等於沿被測物220懸空部分傳導之熱功率。在本實 施例中,獲取沿奈米碳管轴向傳導之熱功率之方法包括 以下步驟:讀取第一電極116及第四電極119所連接之電 流表之數值I,I為0.298微安;讀取第二電極117及第三 電極118所連接之電壓表之數值u,U為1. 175伏;計算奈 米碳管之熱功率AL. 8纳米。 The outer diameter of the carbon nanotubes is 30 microns 098117906, the outer diameter of the carbon nanotubes is 1. 8 nanometers. Therefore, the cross section of the carbon nanotubes Form No. A0101 Page 15 of 36 0982030438-0 201042251 Product ^ = — i?) & = 1.1084Jr Square nanometer. [0034] In step S13, one end of the object 22 is placed on the surface of the first electrode 116 and the second electrode 117, and the other end is placed on the third electrode 118 and the fourth electrode. u 9 surface. It is also to be noted that when the object to be tested 220 is placed on the object to be tested 1 , the two points in contact with the first electrode 117 and the second electrode 18 become the object to be tested 220 . The two ends of the suspended portion. A current is input to the object to be tested 220 through the first electrode 116 and the fourth electrode 119. The measured object 22 starts to self-heat under the action of current and reaches after a period of time. The thermal equilibrium "the temperature of the measured object 220 reaches a stable temperature and distribution at each point of the measured object 2 2 0, that is, the intermediate temperature is still, both sides Low temperature. In the embodiment, a single single-walled carbon nanotube is disposed on the surface of the four electrodes of the device to be tested, and one end of the single-walled carbon nanotube is located at the top of the device to be tested. One electrode U6 and the second electrode 117 have the other end located at the third electrode 118 and the fourth electrode 220 of the device to be placed. The object 220 is located at a portion of the second electrode η? and the third electrode 118 is suspended. In this embodiment, the single-walled carbon nanotubes are perpendicular to the four electrodes of the device 10 to be tested. In this embodiment, as shown in FIG. 5, a flow chart of a method for preparing a single single-walled carbon nanotube on the surface of the four electrodes of the device to be tested 10 includes the following steps: [0035] Step S2 01, providing a cerium oxide substrate on the side of the first object 116 adjacent to the first electrode 116 or adjacent to the fourth electrode 119, and 098117906 Form No. 1010101 Page 16/36 pages 0992030438- 0 201042251 [0036] The two are placed in a reaction chamber. In step S202, a concentration of 10 is provided as a catalyst precursor. Since the concentration of the ferric chloride solution in the mole/liter of the iron chloride solution is low, it is ensured that a single carbon nanotube is grown on the surface of the four electrodes. In this embodiment, the carbon nanotubes grown on the substrate are single-walled carbon nanotubes. [0037] [0040] [0040] Step S203, heating the above-mentioned gasification solution to 95 (rc) Forming a catalyst gas with a mixed gas of hydrogen and helium and introducing the catalyst gas into the reaction chamber at a rate of 6 〇 2 〇〇 cubic cents per minute. Step S204, introducing hydrogen gas and methane as a carbon source gas mixture gas, Therefore, the electric carbon nanotubes of the device 10 are placed on the object to be tested. When the carbon nanotubes are rooted on the object placing device 10, the carbon nanotubes can be controlled by controlling the flow direction of the source gas. Pour on the surface of the four electrodes of the device to be placed 10. Since there is no other support around the single carbon nanotube, it is easy to dump under the action of the carbon source; The method of disposing the carbon nanotubes on the surface of the four electrodes of the analyte placing device 10 may be to directly place the prepared single-walled carbon nanotubes on the surface of the four electrodes of the device to be tested 10 . In S104, please refer to FIG. 6 , and obtain the center point 0 of the suspended portion of the measured object 220 and any The method for the characteristic peak frequency value of the Raman spectrum of the endpoint 1^ or 1^ includes the following steps shown in FIG. 6: Step S301, placing the object placement device 10 and the measuring circuit on which the object to be tested 220 is placed A vacuum chamber body 230 and the vacuum chamber body 098117906 form number A0101 page/36 pages 0982030438-0 [0041] 201042251 230 vacuum, so that the object placement device 10 and the object under test 220 are in a vacuum state The measured object 220 reaches a thermal equilibrium after the current is self-heated for a period of time. [0042] Step S302 'Immediately irradiate the center point 0 and any end point of the suspended object by the Raman laser, or obtain the measured object The peak frequency value of the Raman spectral characteristic of the center point 220 of the suspended portion of 220 and any end point or y. The measurement of the center point 〇 of the suspended portion of the object 22 〇 and the measurement of either end point L 丨 or L 2 are performed multiple times ' Performing three or more measurements, taking the average of the number of measurements. The peak value of the Raman spectral characteristic of the center point of the suspended portion of the measured object 220 and any endpoint 1^ or 1^ is at least three times. The average of the results obtained was measured. The characteristic peak frequency value to be obtained varies according to the material of the object to be tested 220. The characteristic peak frequency value required for the carbon nanotube is the peak frequency value of the G. The center point 0 of the suspended portion of the carbon nanotube is obtained. The Raman spectrum of either end 1^ or 1^, the Raman spectrum consists of a plurality of peaks, where the highest peak is its G peak. See Figure 3, the single-walled carbon nanotubes are suspended at the center point of Raman. The Raman frequency value corresponding to the G peak of the spectrum is 1567. 6αη_1, and the L peak of the Raman spectrum of 1 or L at either end corresponds to 1 L. Raman frequency system 1577. 7 cm_1. [0043] In step S105, a current flows from the first electrode 116 into the object to be tested 220 in the object to be placed, and flows out through the fourth electrode 119. Since the portion of the object to be tested 220 is located between the second electrode in and the third electrode 118, the voltage U of the suspended portion of the object to be tested 220 can be measured by connecting the voltmeter to the second electrode 117 and the third electrode 118. Under the action of the current I, the temperature of the object to be tested 220 gradually increases. The heat generated by the heating of the measured object 2 2 0 is mainly conducted to the both sides along the center point 0 of the suspended portion of the material. After a period of time, the points on the suspended portion of the object to be tested 220 have a stable temperature. 098117906 Form No. A0101 Page 18 of 36 0982030438-0 201042251 Distribution, that is, the intermediate temperature is high and the temperature on both sides is low. The measured object 2 2 〇 vacant part The heating power satisfies the relationship: P = UI. The heating power of the suspended portion of the object to be tested 220 is equal to the thermal power conducted along the suspended portion of the object to be tested 220. In this embodiment, the method for obtaining the thermal power transmitted along the axial direction of the carbon nanotube comprises the steps of: reading the value I of the current meter connected to the first electrode 116 and the fourth electrode 119, I is 0.298 microamperes; Taking the value of the voltmeter connected to the second electrode 117 and the third electrode 118, u, is 1. 175 volts; calculating the thermal power of the carbon nanotube

Ο P = U1 = 3.5 X 10_? iF 〇 [0044]在步驟S106中,如圖7所示為通過比較被測#220懸空部 分中心點及任一端點之拉曼光譜之特徵峰頻值之差獲取 所述被測物220懸空部分中心點及任一端點之溫差之 方法流程圖。該獲取所述被測物220懸全部分中心點及任 一端點之溫差ΔΤ之方法包括以下步驟: Q [0045]步驟S401,獲取被測物220在複數個不同已知溫度下之拉 曼光譜之特徵峰頻值’得到複數個與不同溫度值對應之 拉曼光譜特徵峰頻值之資料點。 [0046] 可將被測物放置裝置10置於一溫度控制儀之上,在一段 時間後,被測物放置裝置1〇及被測物220之溫度等同於溫 度控制儀所設定之溫度。因此可通過該溫度控制儀控制 所述被測物放置裝置1〇及被測物220之溫度◊通過溫度控 制儀設定複數個不同溫度,並測量在所設定之溫度下被 測物220之拉曼光譜之特徵峰頻值。在本實施例中,請參 098117906 表單編號A0101 第19頁/共36頁 0982030438-0 201042251 閱圖8 ’圖中複數悔I备姑 〇 數據點為早壁奈米碳管在不同溫度下 其拉曼光譜G峰頻值。 [0047] /驟⑽2擬°所述複數個數據點得到表徵被測物220之 拉曼光譜特徵峰頻值隨溫度變化之函數_之曲線。通 過線丨生日#非線性回歸或樣條擬合等數學方法擬合被 測物220之之特徵峰頻紐溫度變化之函數關係 本實施例中’對所述各個數據點進行線性擬合得到圖8 令所不之虛線’輕計算該虛線之斜率為K = -G· G257CHT1/ [0048] 步驟S403 ’比較被測物22{)懸空部分之中心點〇及任一端 點、或1^之拉曼光譜特徵♦頻值之差。本實施例中利 用拉曼光譜,測量懸空奈米碳管之中心、點G及任-端點Li 或、之溫度差。用於探測之拉曼雷射聚焦在奈米碳管之1 某個點上,由於拉曼雷射之空間解析度可達丨微米這足 以測量懸空部分為30微米長之懸空奈米碳管各點之溫度 。請一併參閱圖3,為單壁奈米碳管懸空部分中心點及任 一端點之拉曼譜中G峰頻值,之變化轉異。分析圖3即可知 單壁奈米碳管懸空部分中心點〇及任一端點L丨或L之拉曼 譜中G峰頻值之差△Gt-lO. lcnf1。 [0049] 098117906 步驟S404,利用表徵被測物220之拉曼光譜特徵峰頻值隨 溫度變化之函數關係之曲線及被測物220懸空部分之中心 點0及任一端點、或、之拉曼光譜之特徵峰頻值之差計算 得出被測物220中心點0及任一端點1^或1^之間之溫度差 。在本實施例中,單壁奈米碳管懸空部分中心點〇及任一 端點 1^或1^2之溫度差=(-10. lcm 4(-0.0257^11^/ 第20頁/共36頁 表單編號A0101 0982030438-0 201042251 [0050] [0051] [0052]Ο [0053]Ο [0054] [0055] Κ)=393Κ 。 在步驟S1 07中,經上述測量方法,可μ — * 可计异得到室溫下被 測物220之熱導率為2400W/m κ。 由於本發明提供之解率測”从枝非接觸之 光讀測量方法,這樣可以避免具有大熱容量之物體與待 測材料接觸,使被測物溫度保持穩定,也使測量結果更 加準確β 本發明所提供的-維材料熱導率測量方法中,步驟sl〇4 ,步驟S i 0 5及步驟S10 6这爲个步燦的猶序可以为步驟 S104、步驟SU)5、步驟S106 ;步驟S1G5、步驟sl〇4、 步驟S106或步驟S104、步驟Sl〇6、步驟S1(i5。即上述 三个步骤的顺序只需满足步骤S106在步骤S1 〇4之后即可 〇 另外,本領域技術人員還可在本發明精神内作其他變化 ....ΐ11 £ .¾ 1皆..匀 .··:.....-.s h ,當然這些依據本發明精神所作之變化,都應包含在本 發明所要求保護之範圍内。 【圖式簡單說明】 圖1係本發明實施例提供之熱導率測量系統之功能模塊组 成示意圖。 圖2係本發明實施例提供之熱導率測量系統中被測物放置 裝置之結構示意圖。 圖3係本發明實施例提供之被測物懸空部分之中心點及任 一端點之拉曼光譜圖。 098117906 表單編號A0101 第21頁/共36頁 0982030438-0 [0056] 201042251 [0057] [0058] [0059] [0060] [0061] 圖4係本發明實施例提供之一維材料熱導率測量方法之流 程圖。 圖5係本發明實施例製備奈米碳管作為被測物之方法流程 圖。 圖6係本發明實施例提供之測量被測物懸空部分中心點及 任一端點之拉曼光譜之特徵峰頻值之方法之流程圖。 圖7係本發明實施例提供之利用拉曼光譜測量被測物懸空 部分之中心點及任一端點溫度差之方法之流程圖。 圖8係本發明實施例提供之單壁奈米碳管之拉曼光譜G峰 頻值隨溫度變化之關係曲線。 【主要元件符號說明】 [0062] 被測物放 10 幾何尺寸 20 置裝置 獲取模塊 拉曼光譜 30 熱功率獲 40 特徵峰頻 取模塊 值獲取模 塊 比較模塊 50 計算模塊 60 熱導率測 100 基底 111 量系統 第一絕緣 112 第二絕緣 113 層 層 第一載具 114 第二載具 115 第一電極 116 第二電極 117 表單編號A0101 第22頁/共36頁 0982030438-0 098117906 201042251 第三電極 118 第四電極 119 被測物 220 真空腔體 230 Ο 098117906 表單編號Α0101 第23頁/共36頁 0982030438-0Ο P = U1 = 3.5 X 10_? iF 〇 [0044] In step S106, as shown in FIG. 7, the difference between the characteristic peak frequency values of the Raman spectra of the center point and the end point of the suspended portion of the measured #220 is compared. A flowchart of a method for obtaining a temperature difference between a center point of the suspended portion of the measured object 220 and any one of the end points. The method for obtaining the temperature difference ΔΤ of the whole object center point and any end point of the object to be tested 220 includes the following steps: Q [0045] Step S401, obtaining a Raman spectrum of the object to be tested 220 at a plurality of different known temperatures The characteristic peak frequency value 'obtains a plurality of data points of the peak frequency values of the Raman spectra corresponding to different temperature values. [0046] The object placement device 10 can be placed on a temperature controller. After a period of time, the temperature of the object placement device 1 and the object to be tested 220 is equal to the temperature set by the temperature controller. Therefore, the temperature of the object to be tested 1 and the temperature of the object to be tested 220 can be controlled by the temperature controller, and a plurality of different temperatures are set by the temperature controller, and the Raman of the object to be tested 220 is measured at the set temperature. The characteristic peak frequency of the spectrum. In this embodiment, please refer to 098117906 Form No. A0101 Page 19 / Total 36 Page 0982030438-0 201042251 Read Figure 8 'The plural number of repentance I prepared aunts for the early wall carbon nanotubes at different temperatures Mann spectrum G peak frequency value. [0047] / (10) 2 The plurality of data points are obtained to obtain a curve characterizing the peak frequency value of the Raman spectrum characteristic of the object to be tested 220 as a function of temperature. A functional relationship between the characteristic peak frequency and the temperature change of the measured object 220 by a mathematical method such as a nonlinear regression or spline fitting, in this embodiment, 'linearly fitting the respective data points to obtain a graph 8 Let the dotted line 'light' calculate the slope of the dotted line as K = -G· G257CHT1/ [0048] Step S403 'Compare the measured object 22{) with the center point of the suspended portion and any end point, or 1 ^ pull Mann spectrum characteristics ♦ frequency difference. In the present embodiment, the Raman spectrum was used to measure the temperature difference between the center of the suspended carbon nanotube, the point G, and the end-end point Li or . The Raman laser used for detection is focused at a certain point of the carbon nanotube. Since the spatial resolution of the Raman laser is up to 丨 micron, it is enough to measure the suspended carbon nanotubes with a floating length of 30 microns. The temperature of the point. Please refer to FIG. 3 together, and the change of the G-peak frequency value in the Raman spectrum of the center point and the one end point of the single-walled carbon nanotube suspension portion is diversified. Analysis of Fig. 3 shows the difference between the center point 悬 of the suspended portion of the single-walled carbon nanotube and the peak value of the G peak in the Raman spectrum of either end L丨 or L ΔGt-lO. lcnf1. 098117906 Step S404, using a curve that characterizes the Raman spectral characteristic peak frequency value of the measured object 220 as a function of temperature, and a center point 0 of the suspended portion of the measured object 220 and any end point, or Raman The difference between the characteristic peak frequency values of the spectra is calculated as the temperature difference between the center point 0 of the object 220 and either end point 1^ or 1^. In the present embodiment, the temperature difference between the center point of the suspended portion of the single-walled carbon nanotube and the end point 1 or 1^2 = (-10. lcm 4 (-0.0257^11^/ page 20/total 36) Page Form No. A0101 0982030438-0 201042251 [0052] [0052] [0054] [0055] Κ) = 393 。 In step S1 07, by the above measurement method, μ - * can be counted The thermal conductivity of the analyte 220 at room temperature is 2400 W/m κ. Since the solution of the present invention provides a light-reading measurement method from a branch non-contact, it is possible to avoid an object having a large heat capacity and a material to be tested. Contact, so that the temperature of the measured object remains stable, and the measurement result is more accurate. In the method for measuring the thermal conductivity of the dimensional material provided by the present invention, step sl 〇 4, step S i 0 5 and step S10 6 are steps. The order of the three steps can be step S104, step SU) 5, step S106; step S1G5, step s1〇4, step S106 or step S104, step S1〇6, step S1 (i5) Step S106 is satisfied after step S1 〇 4, and other changes can be made by those skilled in the art within the spirit of the present invention. Ϊ́11 £ .3⁄4 1 are all..·::..-.sh, of course, these changes in accordance with the spirit of the present invention should be included in the scope of the claimed invention. Figure 1 is a schematic diagram showing the structure of a functional module of a thermal conductivity measuring system according to an embodiment of the present invention. Figure 2 is a schematic structural view of a device for placing a measured object in a thermal conductivity measuring system according to an embodiment of the present invention. The Raman spectrum of the center point and any end point of the suspended portion of the test object provided by the embodiment. 098117906 Form No. A0101 Page 21 / Total 36 page 0992030438-0 [0056] 201042251 [0058] [0059] 4 is a flow chart of a method for measuring thermal conductivity of a dimensional material according to an embodiment of the present invention. FIG. 5 is a flow chart of a method for preparing a carbon nanotube as a measured object according to an embodiment of the present invention. A flowchart of a method for measuring a characteristic peak frequency value of a Raman spectrum of a center point and a single end point of a suspended portion of a test object according to an embodiment of the present invention. FIG. 7 is a method for measuring a measured object by using Raman spectroscopy according to an embodiment of the present invention. Center point and any end point of the suspended portion Flowchart of the method for temperature difference. Fig. 8 is a graph showing the relationship between the peak frequency of the Raman spectrum of the single-walled carbon nanotubes according to the embodiment of the present invention as a function of temperature. [Key element symbol description] [0062] 10 10 size 20 device acquisition module Raman spectroscopy 30 thermal power acquisition 40 characteristic peak frequency acquisition module value acquisition module comparison module 50 calculation module 60 thermal conductivity measurement 100 substrate 111 quantity system first insulation 112 second insulation 113 layer First carrier 114 second carrier 115 first electrode 116 second electrode 117 form number A0101 page 22 / total 36 page 0992030438-0 098117906 201042251 third electrode 118 fourth electrode 119 object 220 vacuum chamber 230 Ο 098117906 Form NumberΑ0101 Page 23/36 Page 0992030438-0

Claims (1)

201042251 七、申請專利範圍: 1 . 一種一維材料熱導率測量系統,用於測量一被測物之熱導 率,其中,該一維材料熱導率測量系統包括: 一被測物放置裝置,該被測物放置裝置至少包括間隔設置 之四個電極,該被測物設置於該四個電極之表面,且被測 物位於中間兩個電極之間的部分懸空設置, 一幾何尺寸獲取模塊,用於獲取所需之該被測物之幾何尺 寸; 一拉曼光請特徵蜂頻值獲取模塊’用於獲取被測物在電流 作用下自加熱並達到熱平衡後其懸空部分中心點拉曼光譜 之特徵峰頻值作為初始值及被測物懸空部分任一端點拉曼 光譜之特徵峰頻值; 一熱功率獲取模塊,用於獲取沿該被測物懸空部分軸向傳 導之熱功率; 比較板塊’用於比較該被測物懸空部分中心點與懸空部 分任-端點之拉曼光譜之特徵峰頻值之差以獲取所述被測 物中心點及任一端點之溫差; 算模A帛於根據所述被測物懸空部分中心點與任一 端點之'皿差#何尺寸及熱功率計算所述被測物之熱導率 〇 2 .201042251 VII. Patent application scope: 1. A one-dimensional material thermal conductivity measuring system for measuring the thermal conductivity of a measured object, wherein the one-dimensional material thermal conductivity measuring system comprises: a measured object placing device The object placement device includes at least four electrodes disposed at intervals, the object to be tested is disposed on the surface of the four electrodes, and a portion of the object to be tested located between the two electrodes is suspended, a geometric size acquisition module For obtaining the required geometric size of the measured object; a Raman light please feature the bee frequency acquisition module 'for obtaining the measured object self-heating under the action of current and reaching the thermal equilibrium, the central point of the suspended portion is Raman The characteristic peak frequency value of the spectrum is used as an initial value and a characteristic peak frequency value of any end point Raman spectrum of the suspended portion of the object; a thermal power acquisition module for obtaining thermal power transmitted along the axial direction of the suspended portion of the object to be tested; Comparing the plate 'for comparing the difference between the characteristic peak frequency values of the Raman spectrum of the center point of the suspended portion of the measured object and the arbitrary-end point of the suspended portion to obtain the center point of the object to be tested and any The temperature difference between point; A silk count mode according to the measured object to the center point of any suspended portion of a terminal '# Ho dish size and the difference between the thermal power calculating the thermal conductivity of the measured object 2 billion. 、、申明專利範圍第1項所述之熱導率測量系統,其中,所 、乂5Γ f獲取模塊所獲取之幾何尺寸包括被測物之橫截 面積及被測物懸空部八 刀之長度0 如申請專利範圍第 喝所述之熱導率測量系統,其中 述被測物為—轉料 1 7\\ yp|- ο 所 098117906 表單編號 Α0101 « 〇 0982030438-0 第24 I共36頁 201042251 4 .如申請專利範圍第3項所述之熱導率測量系統,其中,所 述被測物包括奈米管、奈米棒、奈米線、奈米纖維或奈米 帶。 5 .如申請專利範圍第4項所述之熱導率測量系統,其中,所 述被測物為奈米碳管。 6 .如申請專利範圍第5項所述之熱導率測量系統,其中,所 述被測物之拉曼光譜之特徵峰頻值為拉曼光譜之G峰頻值 〇 7 .如申請專利範圍第6項所述之熱導率測量系統,其中,所 0 述奈米碳管之懸空部分中心點及任一端點之溫差與奈米碳 管中心點與任一端點之G峰頻值之差滿足以下關係式: ΔΤ = ΚΔΟ 其中,K為奈米碳管之拉曼光譜G峰頻值隨溫度變化之直線 之斜率; △ T為奈米碳管懸空部分中心點及任一端點之溫差; 〇 △ G為奈米碳管懸空部分中心點及任一端點之G峰頻值之差 〇 8 .如申請專利範圍第1項所述之熱導率測量系統,其中,所 述被測物之熱導率與被測物中心點與任一端點之溫度差、 被測物幾何尺寸及被測物熱功率滿足以下關係式: 其中,k為被測物之熱導率; U為被測物懸空部分之電壓; I為流經被測物之電流; △ L為被測物懸空部分之長度; 098117906 表單編號A0101 第25頁/共36頁 0982030438-0 201042251 s為被測物之橫截面積; △ τ為被測物懸空部分之中心點及任一端點之溫差。 9 .如申請專利範圍第1項所述之熱導率測量系統,其中,所 述被測物放置裝置包括一基底、一第一載具、一第二載具 、一第一絕緣層、一第二絕緣層、一第·一電極、一第二電 極、一第三電極及一第四電極,所述第一載具、第二載具 間隔設置於基底之表面,第一絕緣層設置於第一載具之表 面,第二絕緣層設置於第二載具之表面,所述四個電極間 隔設置。 10 .如申請專利範圍第9項所述之熱導率測量系統,其中,所 述第一電極及第二電極間隔並排設置在所述第一絕緣層之 表面,所述第三電極及第四電極間隔並排設置在所述第二 絕緣層之表面。 11 . 一種一維材料熱導率測量方法,其包括以下步驟: 提供一被測物放置裝置,該被測物放置裝置至少包括間隔 設置之四個電極; 獲取所需之被測物之幾何尺寸; 將被測物放置於被測物放置裝置之四個電極之表面,被測 物位於中間兩個電極之間的部分懸空設置,通過外側兩個 電極給被測物通入恒定電流,被測物在電流作用下自加熱 ,並在一段時間後達到熱平衡; 獲取被測物懸空部分中心點及任一端點之拉曼光譜之特徵 峰頻值,並比較被測物懸空部分中心點與任一端點拉曼光 譜之特徵峰頻值之差; 獲取沿被測物懸空部分軸向傳導之熱功率; 利用所述被測物懸空部分中心點與任一端點拉曼光譜之特 098117906 表單編號A0101 第26頁/共36頁 0982030438-0 201042251 徵峰頻值之差獲取所述被測物懸空部分中心點及任一端點 之溫差, 12 . Ο 13 . 14 .Ο 15 . 根據被測物懸空部分中心點與任一端點之溫差、幾何尺寸 及熱功率計算所述被測物之熱導率。 如申請專利範圍第11項所述之一維材料熱導率測量方法, 其中,所述獲取被測物懸空部分中心點及任一端點之拉曼 光譜之特徵峰頻值之方法包括以下步驟: 將所述放置有被測物之被測物放置裝置置於一真空腔體中 並將所述真空腔體抽真空,以使被測物放置裝置及被測物 處於真空狀態; 通過拉曼雷射照射被測物懸空部分中心點及任一端點,獲 取被測物懸空中心點及任一端點之拉曼光譜特徵峰頻值。 如申請專利範圍第12項所述之一維材料熱導率測量方法, 其中’所述被測物懸空部分中心點及任一端點之拉曼光譜 特徵峰頻值為至少三次測量結果之平均值。 如申請專利範圍第11項所述之一維材料4率測量方法, 其中,所述被測物為單壁奈米碳管r所述獲取單壁奈米碳 管之幾何尺寸包括以下步驟:提供放置有奈米碳管之被測 物放置裝置;通過原子力顯微鏡獲取奈米碳管之外徑;通 過掃描電子顯微鏡獲取奈米碳管懸空部分之長度。 如申請專利範圍第11項所述之一維材料熱導率測量方法, 其中,所述利用被測物懸空部分中心點及任一端點之拉曼 光譜之特徵峰頻值之差計算所述被測物懸空部分中心點及 任一端點之溫差之方法具體包括以下步驟: 獲取被測物在複數個不同溫度下之拉曼光譜之特徵峰頻值 得到複數個與不同溫度值對應之拉曼光譜特徵峰頻值之 098117906 表單編號A0101 第27頁/共36頁 0982030438-0 201042251 數據點; 擬合所述複數個數據點得到表徵被測物之拉曼光譜特徵峰 頻值隨溫度變化之函數關係之曲線; 比較被測物懸空部分之中心點及任一端點之特徵峰頻值之 差; 利用表徵被測物之拉曼光譜特徵峰頻值隨溫度變化之函數 關係之曲線及被測物懸空部分之中心點及任一端點之拉曼 光譜之特徵峰頻值之差計算得出被測物懸空部分中心點及 任一端點之間之溫度差。 16 .如申請專利範圍第15項所述之一維材料熱導率測量方法, 其中,所述擬合複數個數據點得到表徵被測物之拉曼光譜 特徵峰頻值隨溫度變化之函數關係之曲線的方法為線性回 歸、非線性回歸或樣條擬合等數學方法。 17 .如申請專利範圍第15項所述之一維材料熱導率測量方法, 其中,所述被測物為奈米碳管時,奈米碳管之懸空部分中 心點及任一端點之溫差與奈米碳管懸空部分中心點與任一 端點之G峰頻值之差滿足以下關係式: Δ7=ΚΔσ 其中,κ為奈米碳管之拉曼光譜g峰頻值隨溫度變化之直線 之斜率; △ τ為奈米碳管懸空部分中心點及任一端點之溫差; △ G為奈米碳管懸空部分中心點及任一端點之G峰頻值之差 〇 18 .如申請專利範圍第15項所述之一維材料熱導率測量方法, 098117906 表單編號Α0101 第28頁/共36頁 0982030438-0 201042251 其中,所述獲取被測物在複數個不同溫度下之拉曼光譜之 特徵峰頻值的方法為通過溫度控制儀控制所述被測物放置 裝置及被測物之溫度。 19 . 如申請專利範圍第11項所述之一維材料熱導率測量方法, 其中,所述被測物之熱導率與被測物中心點與任一端點之 溫度差、被測物幾何尺寸及被測物熱功率滿足以下關係式 其中,k為被測物之熱導率; ύ U為被測物懸空部分之電壓; I為流經被測物之電流; △ L為被測物懸空部分之長度; S為被測物之橫截面積; △ T為被測物懸空部分之中心點及任一端點之溫差。 ❹ 098117906 表單編號A0101 第29頁/共36頁 0982030438-0The thermal conductivity measuring system according to claim 1, wherein the geometrical dimensions acquired by the acquisition module include the cross-sectional area of the measured object and the length of the eight-knife of the suspended portion of the measured object. For example, the thermal conductivity measuring system described in the patent application scope is as follows: the measured object is - the transfer material 1 7\\ yp|- ο 098117906 form number Α 0101 « 〇0982030438-0 24th I 36 pages 201042251 4 The thermal conductivity measuring system according to claim 3, wherein the measured object comprises a nanotube, a nanorod, a nanowire, a nanofiber or a nanobelt. 5. The thermal conductivity measuring system according to claim 4, wherein the object to be tested is a carbon nanotube. 6. The thermal conductivity measuring system according to claim 5, wherein the characteristic peak frequency of the Raman spectrum of the measured object is a G peak frequency value of the Raman spectrum 〇7. The thermal conductivity measuring system according to Item 6, wherein the difference between the temperature difference between the center point and the end point of the suspended portion of the carbon nanotube and the G peak frequency value of the carbon nanotube center point and any end point is The following relationship is satisfied: ΔΤ = ΚΔΟ where K is the slope of the line of the peak frequency of the Raman spectrum of the carbon nanotube with temperature; Δ T is the temperature difference between the center point of the suspended portion of the carbon nanotube and any end point; 〇 Δ G is the difference between the center point of the hollow portion of the carbon nanotube and the G peak frequency value of any of the end points. The thermal conductivity measuring system according to claim 1, wherein the object to be tested The thermal conductivity and the temperature difference between the center point and any end point of the object to be tested, the geometrical dimensions of the measured object, and the thermal power of the measured object satisfy the following relationship: where k is the thermal conductivity of the measured object; U is the measured object The voltage of the suspended portion; I is the current flowing through the measured object; △ L is the suspended object The length of the portion; Form Number A0101 098 117 906 Page 25/36 0982030438-0 201042251 s Total cross-sectional area of the measured object; △ τ is the center point of the overhang was measured and the temperature difference between either end of the point. 9. The thermal conductivity measuring system of claim 1, wherein the device to be tested comprises a substrate, a first carrier, a second carrier, a first insulating layer, and a first a second insulating layer, a first electrode, a second electrode, a third electrode, and a fourth electrode, wherein the first carrier and the second carrier are spaced apart from each other on a surface of the substrate, and the first insulating layer is disposed on the second insulating layer The surface of the first carrier, the second insulating layer is disposed on the surface of the second carrier, and the four electrodes are spaced apart. The thermal conductivity measuring system of claim 9, wherein the first electrode and the second electrode are disposed side by side on a surface of the first insulating layer, the third electrode and the fourth electrode The electrodes are spaced apart side by side on the surface of the second insulating layer. 11. A one-dimensional material thermal conductivity measuring method, comprising the steps of: providing a measured object placing device, the measuring object placing device comprising at least four electrodes arranged at intervals; obtaining a desired geometric shape of the measured object The object to be tested is placed on the surface of the four electrodes of the device to be tested, and the portion of the object to be tested is placed between the two electrodes, and a constant current is applied to the object through the two outer electrodes. The object self-heats under the action of current, and reaches the heat balance after a period of time; obtains the characteristic peak frequency value of the Raman spectrum of the center point and any end point of the suspended portion of the measured object, and compares the center point and either end of the suspended portion of the measured object The difference between the characteristic peak frequency values of the point Raman spectrum; the thermal power of the axial conduction along the suspended portion of the measured object; the special point of the Raman spectrum of the suspended point of the measured object and the end point of any of the endpoints 098117906 Form No. A0101 26 pages/total 36 pages 0982030438-0 201042251 The difference between the peak frequency values of the peaks of the measured object is obtained from the center point of the suspended portion of the measured object and the temperature difference between any of the end points, 12 . Ο 13 . 14 .Ο 1 5. Calculate the thermal conductivity of the measured object according to the temperature difference, geometric size and thermal power of the center point and any end point of the suspended portion of the measured object. The method for measuring a thermal conductivity of a dimension material according to claim 11, wherein the method for obtaining a characteristic peak frequency value of a Raman spectrum of a center point and a single end point of the suspended portion of the object to be tested includes the following steps: Place the device to be tested in which the object to be tested is placed in a vacuum chamber and evacuate the vacuum chamber so that the device to be tested and the object to be tested are in a vacuum state; The center point and any end point of the suspended portion of the object to be measured are irradiated to obtain the Raman spectral characteristic peak frequency value of the dangling center point and any end point of the object to be tested. The method for measuring thermal conductivity of a dimensional material according to claim 12, wherein the peak frequency of the Raman spectral characteristic of the center point and any end point of the suspended portion of the measured object is an average of at least three measurements. . The one-dimensional material 4 rate measuring method according to claim 11, wherein the measured object is a single-walled carbon nanotube, and the geometrical dimensions of the single-walled carbon nanotubes include the following steps: A device for placing a sample of a carbon nanotube is placed; an outer diameter of the carbon nanotube is obtained by an atomic force microscope; and a length of the suspended portion of the carbon nanotube is obtained by a scanning electron microscope. The method for measuring thermal conductivity of a dimensional material according to claim 11, wherein the calculating the difference between the characteristic peak frequency values of the Raman spectra of the center point of the suspended portion of the measured object and any of the end points is The method for measuring the temperature difference between the center point and the end point of the suspended portion of the measuring object specifically comprises the following steps: obtaining characteristic peak frequency values of the Raman spectrum of the measured object at a plurality of different temperatures to obtain a plurality of Raman spectra corresponding to different temperature values Characteristic peak frequency value 098117906 Form No. A0101 Page 27 / Total 36 page 0992030438-0 201042251 Data points; fitting the plurality of data points to obtain a function of the peak frequency value of the Raman spectrum characteristic of the measured object as a function of temperature Curve; compares the difference between the characteristic peak frequency values of the center point and any end point of the suspended portion of the measured object; and uses the curve which characterizes the peak frequency value of the Raman spectrum characteristic of the measured object as a function of temperature and the object to be suspended The difference between the characteristic peak frequency values of the Raman spectrum of the center point of any part and the end point of any part is calculated as the temperature difference between the center point and any end point of the suspended portion of the measured object. 16. The method for measuring thermal conductivity of a dimensional material according to claim 15, wherein the fitting the plurality of data points to obtain a function of the peak frequency value of the characteristic Raman spectrum of the measured object as a function of temperature The method of the curve is a mathematical method such as linear regression, nonlinear regression or spline fitting. 17. The method for measuring thermal conductivity of a dimensional material according to claim 15, wherein when the measured object is a carbon nanotube, a temperature difference between a center point of the suspended portion of the carbon nanotube and any end point The difference between the G-peak frequency value of the center point and the end point of the suspended portion of the carbon nanotube satisfies the following relationship: Δ7=ΚΔσ where κ is the Raman spectrum of the carbon nanotubes. Slope; Δ τ is the temperature difference between the center point and any end point of the suspended portion of the carbon nanotube; Δ G is the difference between the center point of the hollow portion of the carbon nanotube and the G peak frequency value of any end point .18. Method for measuring thermal conductivity of one-dimensional material of 15 items, 098117906 Form No. 1010101 Page 28/36 pages 0982030438-0 201042251 Wherein, the characteristic peak of the Raman spectrum of the measured object at a plurality of different temperatures is obtained The frequency value is controlled by the temperature controller to control the temperature of the device to be placed and the object to be tested. 19. The method for measuring thermal conductivity of a dimensional material according to claim 11, wherein the thermal conductivity of the measured object and the temperature difference between the center point of the measured object and any of the end points, the geometry of the measured object The size and the thermal power of the measured object satisfy the following relationship, where k is the thermal conductivity of the measured object; ύ U is the voltage of the suspended portion of the measured object; I is the current flowing through the measured object; Δ L is the measured object The length of the suspended portion; S is the cross-sectional area of the measured object; Δ T is the temperature difference between the center point of the suspended portion of the measured object and any end point. ❹ 098117906 Form No. A0101 Page 29 of 36 0982030438-0
TW98117906A 2009-05-27 2009-05-27 Thermal conductivity measurement system for one dimension material and measurement method thereof TW201042251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98117906A TW201042251A (en) 2009-05-27 2009-05-27 Thermal conductivity measurement system for one dimension material and measurement method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98117906A TW201042251A (en) 2009-05-27 2009-05-27 Thermal conductivity measurement system for one dimension material and measurement method thereof

Publications (1)

Publication Number Publication Date
TW201042251A true TW201042251A (en) 2010-12-01

Family

ID=45000481

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98117906A TW201042251A (en) 2009-05-27 2009-05-27 Thermal conductivity measurement system for one dimension material and measurement method thereof

Country Status (1)

Country Link
TW (1) TW201042251A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103776814A (en) * 2014-01-28 2014-05-07 东南大学 Measurement method for heat conductivity of thin film material under stress effect of raman scattering
CN103901247A (en) * 2012-12-28 2014-07-02 清华大学 Electric potential difference measurement method
TWI490484B (en) * 2012-10-31 2015-07-01 Hon Hai Prec Ind Co Ltd Contacting thermal resistance measurement method for one dimension material
CN103364391B (en) * 2012-04-09 2015-12-02 财团法人工业技术研究院 Device for measuring thermal diffusivity and method for measuring thermal diffusivity
CN107845950A (en) * 2017-12-08 2018-03-27 珠海市运泰利自动化设备有限公司 A kind of high efficiency adds cooling system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103364391B (en) * 2012-04-09 2015-12-02 财团法人工业技术研究院 Device for measuring thermal diffusivity and method for measuring thermal diffusivity
TWI490484B (en) * 2012-10-31 2015-07-01 Hon Hai Prec Ind Co Ltd Contacting thermal resistance measurement method for one dimension material
CN103901247A (en) * 2012-12-28 2014-07-02 清华大学 Electric potential difference measurement method
TWI476413B (en) * 2012-12-28 2015-03-11 Hon Hai Prec Ind Co Ltd Method for measuring electric potential differrence
CN103901247B (en) * 2012-12-28 2016-08-31 清华大学 Potential difference measurements method
US9470722B2 (en) 2012-12-28 2016-10-18 Tsinghua University Method for measuring electric potential difference
CN103776814A (en) * 2014-01-28 2014-05-07 东南大学 Measurement method for heat conductivity of thin film material under stress effect of raman scattering
CN103776814B (en) * 2014-01-28 2016-01-06 东南大学 A kind of measuring method based on membraneous material thermal conductivity under the effect of stress of Raman scattering
CN107845950A (en) * 2017-12-08 2018-03-27 珠海市运泰利自动化设备有限公司 A kind of high efficiency adds cooling system
CN107845950B (en) * 2017-12-08 2024-02-13 珠海市运泰利自动化设备有限公司 High-efficiency heat adding and radiating system

Similar Documents

Publication Publication Date Title
CN101881741B (en) One-dimensional material thermal conductivity measurement method
Zhang et al. A review on principles and applications of scanning thermal microscopy (SThM)
Zeng et al. Thermally conductive reduced graphene oxide thin films for extreme temperature sensors
Shi et al. Measuring thermal and thermoelectric properties of one-dimensional nanostructures using a microfabricated device
Yue et al. Thermal transport in multiwall carbon nanotube buckypapers
US8628237B1 (en) Method for measuring contacting thermal resistance of one-dimensional structures
Guo et al. Thermal characterization of microscale conductive and nonconductive wires using transient electrothermal technique
CN102944573B (en) Method for simultaneously measuring laser absorptivity and thermal conductivity of single micro-nano wire rod
Kim et al. A four-probe thermal transport measurement method for nanostructures
Cho et al. Half-pipe palladium nanotube-based hydrogen sensor using a suspended nanofiber scaffold
Li et al. Thermal characterization of carbon nanotube fiber by time-domain differential Raman
TW201042251A (en) Thermal conductivity measurement system for one dimension material and measurement method thereof
Bifano et al. Effects of heat treatment and contact resistance on the thermal conductivity of individual multiwalled carbon nanotubes using a Wollaston wire thermal probe
Li et al. Temperature dependent thermal conductivity of a suspended submicron graphene ribbon
WO2019144396A1 (en) Method and apparatus for testing thermal conductivity of nanoscale material
Wang et al. Thermal transport across the interface between a suspended single-walled carbon nanotube and air
Wang et al. Raman measurements of optical absorption and heat transfer coefficients of a single carbon fiber in atmosphere environment
Ozawa et al. Boron-doped diamond as a new heating element for internal-resistive heated diamond-anvil cell
Lin et al. One-dimensional thermal characterization at the micro/nanoscale: review of the TET technique
Shahzad et al. Convective heat transfer enhancement for electronic device applications using patterned MWCNTs structures
Braun et al. Spatially mapping thermal transport in graphene by an opto-thermal method
Qiu et al. Experimental techniques overview
CN110031504B (en) Method for testing thermal contact resistance between circular-section one-dimensional nano structure
Hippalgaonkar et al. Experimental studies of thermal transport in nanostructures
Shapira et al. Segmented metal nanowires as nanoscale thermocouples