TW201040616A - Active device array substrate, repairing method thereof and liquid crystal display device - Google Patents

Active device array substrate, repairing method thereof and liquid crystal display device Download PDF

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Publication number
TW201040616A
TW201040616A TW98115027A TW98115027A TW201040616A TW 201040616 A TW201040616 A TW 201040616A TW 98115027 A TW98115027 A TW 98115027A TW 98115027 A TW98115027 A TW 98115027A TW 201040616 A TW201040616 A TW 201040616A
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Taiwan
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layer
substrate
disposed
array substrate
active device
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TW98115027A
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Chinese (zh)
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Po-Hsin Huang
Yu-Wen Huang
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Chi Mei Optoelectronics Corp
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Priority to TW98115027A priority Critical patent/TW201040616A/en
Publication of TW201040616A publication Critical patent/TW201040616A/en

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Abstract

A method for laser repairing an active device array substrate including at least the following steps is provided. First, a substrate is provided. And a first patterned conductive layer, a gate insulating layer, a plurality of channels, a second patterned conductive layer and a passivation layer are formed on the substrate in proper order. The first patterned conductive layer includes a plurality of scan lines and gates, and the second patterned conductive layer includes a plurality of data lines and sources/drains. After the scan and data lines are formed on the substrate, detecting if the defect lines are formed. After all, forming a repairing line on the passivation layer to repair the active device array substrate.

Description

201040616201040616

iZITW 24342twf.doc/n 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種液晶顯示裝置,且特別是有關於 -種液晶顯7F裝置及其杨元件陣列基板的修補方法。 【先前技術】 雖然目前液晶顯示器技術已趨成熟’但液晶顯示面板 ❹ 在製造過程之中難免會產生一些瑕疵(defect),而這些瑕疵 在液晶顯示器顯示影像時會造成感官上的不適,若直接報 廢丟棄這些有瑕疵的液晶顯示面板,將會使得製造成本大 幅增加。通常’只依賴改善製程技術來實現零瑕疵率是非 常困難的,因此液晶顯示面板的瑕症修補技術變得相當的 重要。 一般而言,液晶顯示器主要包括一液晶顯示面板與一 用以提供足夠光源的背光模組。液晶顯示面板主要包括一 薄膜電晶體陣列基板與一彩色濾、光基板。薄膜電晶體陣列 ❹ 基板在製造的過程之中難免會產生一些斷線瑕疫。這些斷 線瑕疯可藉由陣列測試(array test)檢測出,並可在薄膜電晶 體陣列基板的製造過程中以雷射化學氣相沈積法(laser chemical vapor deposition,laser CVD)將其修復。 習知利用雷射化學氣相沈積法以修補斷線瑕疫的流程 如下:當第一金屬層形成於基板上之後,先利用陣列測試 檢測出第一金屬層的斷線’並藉由雷射化學氣相沈積法修 復斷線。然後,清洗基板’以避免基板上有碎屑或雜粒附 3 201040616 a w ; rW 24342twf.doc/n 耆。接者,於基板上再依序形成閘絕緣層以及第二金屬 並且檢測及修復第二金屬層的斷線。之後,也需 洗基板。之後,於第二金屬層上形成保護層以^晝^凊 層,以形成薄膜電晶體陣列基板。 極 由上述可知,習知利用雷射化學氣相沈積法以 膜電晶體陣列基板的斷線瑕疵,需要進行兩次的雷j 氣相沈積以及兩次的清洗。因此,自動化物料處理匕予 (Automated Material Handling Systems,AMHS)需要夕 ΐ 統 運薄膜電晶體陣列基板至機台上清洗及沈積。不但ζ二搬 晶體陣列基板的製作循環時程繁複且長,且自純物j 理系統也會耗費成本。崎,由於需要額外的兩次产= ^ ’耗費清洗麵設備成本,且清洗所t求之^ ^ =錢昂責’因此使得薄膜電晶體陣列基板的成本也居g 然而,並非所有的斷線瑕疵都適用雷射化 ^來修補。例如當斷線瑕症是發生在第—金屬層^但= =二金屬層時才被發現,且斷線區域正好位於 層父接區域,則此時由於第二金屬層上 =情況下若對第-金屬層做修補,則;屬 層與第一金屬層的短路發生。 、 【發明内容】 ^發明提供—種修補良率高的主動元件陣列某板。 本發明提供一種可節省成本的液晶_ 201040616iZITW 24342 twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display 7F device and a repair method thereof. [Prior Art] Although the current liquid crystal display technology has matured, the liquid crystal display panel will inevitably produce some defects during the manufacturing process, and these defects may cause sensory discomfort when displaying images on the liquid crystal display. Discarding these defective LCD panels will result in a significant increase in manufacturing costs. It is often difficult to rely solely on improved process technology to achieve zero defect rate, so the hysteresis patching technology for liquid crystal display panels has become quite important. In general, a liquid crystal display mainly includes a liquid crystal display panel and a backlight module for providing a sufficient light source. The liquid crystal display panel mainly comprises a thin film transistor array substrate and a color filter and an optical substrate. Thin Film Transistor ❹ The substrate will inevitably produce some disconnection plague during the manufacturing process. These wire breaks can be detected by an array test and can be repaired by laser chemical vapor deposition (laser CVD) during the fabrication of the thin film transistor array substrate. The procedure for repairing a plague by laser chemical vapor deposition is as follows: after the first metal layer is formed on the substrate, the first metal layer is detected by an array test and the laser is detected by laser Chemical vapor deposition repairs broken wires. Then, the substrate is cleaned to avoid debris or debris on the substrate; 20100416 aw; rW 24342twf.doc/n 耆. Then, the gate insulating layer and the second metal are sequentially formed on the substrate and the disconnection of the second metal layer is detected and repaired. After that, the substrate needs to be washed. Thereafter, a protective layer is formed on the second metal layer to form a thin film transistor array substrate. From the above, it is known that the laser CVD of the film transistor array substrate by laser chemical vapor deposition requires two times of vapor deposition and two cleanings. Therefore, Automated Material Handling Systems (AMHS) needs to transport the thin film transistor array substrate to the machine for cleaning and deposition. Not only does the production cycle of the crystal array substrate be complicated and long, but it is also costly from the pure material processing system. Saki, because it requires an additional two production = ^ 'cost of cleaning surface equipment, and the cleaning is required ^ ^ = money blame' so the cost of the thin film transistor array substrate is also g, however, not all broken lines瑕疵 All are suitable for laser repair ^ to repair. For example, when the disconnection sputum is found in the first metal layer ^ but = = two metal layers, and the broken line area is located in the layer parent connection area, then the second metal layer is on the case = if When the first metal layer is repaired, a short circuit between the genus layer and the first metal layer occurs. [Invention] The invention provides a board for repairing an active component array with high yield. The invention provides a liquid crystal which can save cost _ 201040616

iZITW 24342twf.doc/n 本發明提供—種主動元件陣列基板的雷射修補方法, 其可減少主動元件陣列基板的製作循環時程。 ★本發明提出-種主動元件陣列基板,其包括一基板、 一第-圖案化導電層、—閘絕緣層、多個通道層、二 =化導電層、—保護層以及至少—修補線。第一圖案化iZITW 24342twf.doc/n The present invention provides a laser repairing method for an active device array substrate, which can reduce the manufacturing cycle time of the active device array substrate. The present invention provides an active device array substrate comprising a substrate, a first patterned conductive layer, a gate insulating layer, a plurality of channel layers, a second conductive layer, a protective layer, and at least a repair line. First patterning

O 描配上,其中第一圖案化導電層包括多條掃 =線及夕個閘極,而至少其中—條掃描配線斷線。間絕 爲0配置於基板上’其中閘絕緣層覆蓋第—圖案化導電 ;絕=配置:閘絕緣層上。第二圖案化導電層配置於 個、/S ’而第二圖案化導電層包括多條資料配線及多 第保護層配置於_緣層上,其中保護層覆蓋 穿==層’且具有多個接觸窗,而部分接觸窗貫 犀:’、、、邑以暴露出斷線之掃描配線。修補線配置於保護 i線/中修補線填人位於贼線上的接_,以修補瑕In the O-picking, the first patterned conductive layer includes a plurality of scan lines and a night gate, and at least one of the scan lines is broken. Between the two, it is disposed on the substrate, where the gate insulating layer covers the first patterned conductive; the absolute = configuration: the gate insulating layer. The second patterned conductive layer is disposed on the first layer, and the second patterned conductive layer includes a plurality of data lines and a plurality of protective layers disposed on the edge layer, wherein the protective layer covers the through layer and has a plurality of layers Contact window, and part of the contact window through the rhythm: ',,, 邑 to expose the broken wiring. The repair line is configured to protect the i line/middle repair line and fill it in the thief line to repair 瑕

O 氮化實施财,上述之閘絕緣層的材質包括 晶4ΐ::之—實施例中,上述之通道層的材質包括非 在本發明之-實關t,上叙絲元基板更 匕括一配置於保護層上的平坦層。 機光^本發明之—實關中,上狀平坦層的材質包括有 在本發明之-實施例中,上述之主動元件陣列基板更 5 201040616 IW 24342twf.doc/n 平坦層上的畫素電極層,其中畫素電極層透 過邻刀接觸窗與汲極電性連接。 包括狀r實施财,上述之絲元件陣列基板更 -置於保濩層上的圖案化晝素電極層,Α中圭 極層透過部分接觸窗歧極電性連接。、旦’、 在本發日狀—實麟彳巾,上述之主動元件陣列基板更 已括一配置於晝素電極層上的彩色濾光層。 一本發明提出-種液晶顯示裝置,其包括一對向基板、 -上述之絲元件陣板以及—液晶層。主動元件陣列 基板配置於對向基板下,其包括-基板、-第-圖案化導 電層、—閘絕緣層、多個通道層、一第二圖案化導電層、 保濩層以及至少一修補線。第一圖案化導電層配置於基 板上其中第一圖案化導電層包括多條掃描配線及多個閘 極,而至少其中一條掃描配線斷線。閘絕緣層配置於基板 上,其中閘絕緣層覆蓋第一圖案化導電層。通道層配置於 閘絕緣層上。第二圖案化導電層配置於閘絕緣層上,而第 一阖案化導電層包括多條資料配線及多個源極/汲極。保護 層配置於閘絕緣層上,其中保護層覆蓋第二圖案化導電 層,且具有多個接觸窗,而部分接觸窗貫穿閘絕緣層以暴 路出斷線之掃描配線。修補線配置於保護層上,其中修補 線填入暴露掃描配線的接觸窗,以修補掃描配線。液晶層 配置於對向基板與主動元件陣列基板之間。 在本發明之一實施例中,上述之閘絕緣層的材質包括 氮化石夕。 201040616O nitriding implementation, the material of the above-mentioned gate insulating layer includes crystal 4:: - In the embodiment, the material of the above-mentioned channel layer includes the non-invention of the present invention, and the upper substrate is further included A flat layer disposed on the protective layer. In the present invention, the material of the upper flat layer includes the pixel electrode layer on the flat layer of the active device array substrate in the embodiment of the present invention. The pixel electrode layer is electrically connected to the drain through the adjacent blade contact window. Including the shape r, the above-mentioned silk element array substrate is further disposed on the patterned halogen element layer on the protective layer, and the germanium layer is electrically connected through a partial contact window. In the present invention, the active device array substrate further includes a color filter layer disposed on the halogen electrode layer. A liquid crystal display device comprising a pair of substrates, a wire element array plate and a liquid crystal layer. The active device array substrate is disposed under the opposite substrate, and includes a substrate, a first-patterned conductive layer, a gate insulating layer, a plurality of channel layers, a second patterned conductive layer, a protective layer, and at least one repairing line . The first patterned conductive layer is disposed on the substrate, wherein the first patterned conductive layer comprises a plurality of scan lines and a plurality of gates, and at least one of the scan lines is broken. The gate insulating layer is disposed on the substrate, wherein the gate insulating layer covers the first patterned conductive layer. The channel layer is disposed on the gate insulating layer. The second patterned conductive layer is disposed on the gate insulating layer, and the first patterned conductive layer includes a plurality of data wirings and a plurality of source/drain electrodes. The protective layer is disposed on the gate insulating layer, wherein the protective layer covers the second patterned conductive layer and has a plurality of contact windows, and a part of the contact window penetrates the gate insulating layer to blast the broken scan lines. The repair line is disposed on the protective layer, wherein the repair line fills the contact window exposing the scan wiring to repair the scan wiring. The liquid crystal layer is disposed between the opposite substrate and the active device array substrate. In an embodiment of the invention, the material of the gate insulating layer comprises nitride nitride. 201040616

liZITW 24342twf.doc/n 在本發明之一實施例中’上述之通道層的材質包括非 晶石夕或多晶石夕。 在本發明之一實施例中,上述之液晶顯示裝置更包括 一配置於保護層上的平坦層。 在本發明之一實施例中,上述之平坦層之材質包括有 機光阻。 〇 在本發明之一實施例中,上述之主動元件陣列基板更 包括-配置於平坦層上的晝素電極層,其巾晝素電極層透 過部分接觸窗與汲極電性連接。 在本發明之-實施例中,上述之主動元件陣列基板更 包括-配置於保護層上的圖案化晝素電極層,其中晝素電 極層透過部分接觸窗與汲極電性連接。 在本發明之-實施例中,上述之主動元件陣列基板更 匕括一配置於晝素電極層上的彩色溏光。 基板在本發日狀—實施财,上狀對向基缺彩色遽光liZITW 24342twf.doc/n In one embodiment of the invention, the material of the channel layer described above includes a non-crystalline or polycrystalline stone. In an embodiment of the invention, the liquid crystal display device further includes a flat layer disposed on the protective layer. In an embodiment of the invention, the material of the flat layer comprises an organic photoresist. In an embodiment of the invention, the active device array substrate further includes a halogen electrode layer disposed on the flat layer, wherein the cover electrode layer is electrically connected to the drain through a part of the contact window. In an embodiment of the invention, the active device array substrate further includes a patterned halogen electrode layer disposed on the protective layer, wherein the halogen electrode layer is electrically connected to the drain through the partial contact window. In an embodiment of the invention, the active device array substrate further includes a color neon disposed on the halogen electrode layer. The substrate is in the shape of the hair - the implementation of the wealth, the upper shape of the opposite base lacks color

在本毛月之實施例中,上述之液晶 :背光模組,其中主動元件陣列基板、液晶層4= 配置於背光漁JL方。 I、對向基板 -第種主動元件陣列基板,其包括-基板、 二保護層以及至少一修補線。第—圖案化 描配i及、上,其令弟一圖案化導電層包括多條掃 線及夕個閘極。閘絕緣層配置於基板上,其中閘絕緣 201040616 ru/uuDUAiz^iTW 24342twf.doc/n 層覆蓋第一圖案化導電層。通道層配置於閘絕緣層上。第 一圖案化導电層配置於閘絕緣層上,而第二圖案化導電層 包括多條資料配線及多個源極/没極,且至少其中一條資料 配線斷線。保護層配置於閘絕緣層上,其中保護層覆蓋第 一圖案化導電層,且具有多個接觸窗,而部分接觸窗暴露 出斷線之資料配線。修補魏置於保護層上,其中修補線 填入暴露資料配線的接觸窗,以修補資料配線。 在本發明之-實施例中,上述之閑絕緣層的材質包括 氮化矽。 在本發明之-貫施例中,上述之通道層的材質包括非 晶石夕或多晶石夕。 在本發明之一實施例中 包括一配置於保護層上的平 在本發明之一實施例中 機光阻。 ’上述之主動元件陣列基板更 坦層。 ’上述之平坦層的材質包括有 勺二Γί '臀,上述之主動元件陣列基㈣ 過邙八=觸::4"層上的晝素電極層,其中晝素電極層这 過邛分接觸*與汲極電性連接。 ^括-配置於賴層上的圖案 極層透過部分接觸窗與汲極紐連^ 中旦素^ 包括中’上述之主動元件陣列基板受In the embodiment of the present invention, the liquid crystal: backlight module, wherein the active device array substrate and the liquid crystal layer 4 are disposed on the backlight JL side. I. Counter substrate—The first active device array substrate includes a substrate, a second protective layer, and at least one repair line. The first patterning i and the upper layer of the patterned conductive layer comprises a plurality of sweep lines and a gate. The gate insulating layer is disposed on the substrate, wherein the gate insulating layer 201040616 ru/uuDUAiz^iTW 24342twf.doc/n covers the first patterned conductive layer. The channel layer is disposed on the gate insulating layer. The first patterned conductive layer is disposed on the gate insulating layer, and the second patterned conductive layer includes a plurality of data wires and a plurality of source/drain electrodes, and at least one of the data wires is broken. The protective layer is disposed on the gate insulating layer, wherein the protective layer covers the first patterned conductive layer and has a plurality of contact windows, and the partial contact window exposes the broken data wiring. The repairing layer is placed on the protective layer, and the repairing line is filled in the contact window of the exposed data wiring to repair the data wiring. In an embodiment of the invention, the material of the above-mentioned dummy insulating layer comprises tantalum nitride. In the embodiment of the present invention, the material of the channel layer includes a non-crystallite or a polycrystalline stone. In one embodiment of the invention, a photoresist disposed on a protective layer in accordance with an embodiment of the present invention is included. The active element array substrate described above is more uniform. The material of the above flat layer includes a scoop two Γ 'hip, the above-mentioned active element array base (four) 邙 = = touch:: 4" the layer of the halogen electrode on the layer, wherein the halogen electrode layer is over-contacted* Electrically connected to the bungee. Included - the pattern disposed on the lamella layer, the pole layer is transmitted through the partial contact window and the 汲 纽 ^ ^ 中 中 中 ^ Included in the above-mentioned active device array substrate

Hi電極層上的彩色濾'光層。 X日出種液晶|貞示裝置,其包括—對向基板、 Z1TW 24342twf.doc/n 201040616A color filter 'light layer' on the Hi electrode layer. X sunrise liquid crystal | display device, including - opposite substrate, Z1TW 24342twf.doc/n 201040616

O o 上述之主動元件陣列基板以及—液晶層。主動元件陣列 基板,其包括一基板、一第一圖案化導電層、一閘絕緣層、 多個通道層、一第二圖案化導電層、一保護層以及至 修補線。第一圖案化導電層配置於基板上,其中第—圖案 化導電層包括多條掃描配線及多個閘極。閘絕緣層配置於 基板上,其t閘絕緣層覆蓋第一圖案化導電層。通道層配 置於閘絕緣層上。第二酸化導電層配置於閘絕緣層丄, 而第二圖案化導電層包括多條資料配線及多個源極/没 ^ ’且至少其中—條資料配線崎。㈣層配置於閘絕緣 2 ’其中保護層覆蓋第二_化導電層,^具有多個接 二,而部分些接_暴露㈣線之:#料配線。修補線配 ^呆制上’其巾修獅填人暴露資料配線的接觸窗, 料配線。液晶層配置於對向基板與主動元件陣列 上述之閘絕緣層的材質包括 上述之通道層的材質包括非 上述之液晶顯示襄置更包括 上述之平坦層之材質包括有 在本發明之一實施例中 氣化石夕。 在本發明之一實施例中 晶矽或多晶矽。 在本發明之一實施例中 配置於保護層上的平坦層 在本發明之一實施例中 機光阻。 在本發明之—實_巾,上述之线元料列基板; 匕括-配置於平坦層上的圖案化晝素電極層,其中晝素喝 201040616 ru/uu^u/\iz,i 1W 24342twf.doc/n 極層透過部分接觸窗與汲極電性連接。 在本發明之-實施例中’上述之主動元件陣列基板更 包括-配置於保護層上的晝素電極層,其中晝素電極層透 過部分接觸窗與汲極電性連接。 在本發明之-實施例中,上述之主動元件陣列基板更 包括一配置於晝素電極層上的彩色濾光層。 在本發明之-實施例中,^述之對純板為彩色滤光 基板。 —在本發明之-實施例中,上述之液晶顯示裝置更包括 動元件陣列基板、液晶層與對向基板 本發明提出-種主動元件陣列基板的修補方法, :第==先提供一基板,並於基板上依序形成 圖案化V電層、一閘絕緣層、多個通道層、— θ案化導電層以及—保護層,其中第—圖案化 多個閑極’而第二圖案化導電層包括 =配線及多悔極/_。之後’於掃描配線與資料配: 後於基板上後’檢測掃描配線與資料配線是否斷線。最 修積法於保護層上形成-修補線- 氮化5本發明之—實施财,上述之閘絕緣層的材質包括 晶石夕tr 一實施例中’上述之通道層的材質包括非 201040616 ---------IZ.1TW 24342twf.doc/n 隹尽發明之 於保護層形成多個接觸窗 在本發明之一實施例中,部分接觸窗貫穿保護層,並 暴路出貧料配線。 在本發明之一實施例中,部分接觸窗貫穿保護層及閘 絕緣層’並暴露出掃描配線。 o o 在本發明之一實施例中,形成修補線的方法包括雷射 化學氣相沉積法或是注入金屬薄臈法(InjectMetalFilm) 在本發明之一貫施例中,於修補主動元件陣列基板後 更包括於保護層上形成一平坦層。 在本發明之一實施例中,上述之平坦層的材質包括有 機光阻。 ' 本發明之—實施财,域之絲元件_基板的 :射修補方法更包括於平坦層场成—畫素f極層,里中 旦素電極層並藉由部分接職以歧極電性連接。 干在本發明之-實施例中,上述之主動元件陣列基板的 :射修補方法更包括於保護層上形成—晝素電極層,盆中 至素電極層並藉由部分接觸t以與汲極電性連接。曰…、 在本發明之-實施例中,更包括 一彩色濾、光層。 極層上形成 本發明於第一、第二圖案化導電声 =二 否有掃^^ 一尺之後再利用修補線,在—個製程步驟 兀件陣列基板。因此,本發明 是主動 發月之主動疋件陣列基板及其雷 201040616 rvTW 24342twf.doc/n 射修補方法與液晶顯不裝置,具有節省成本、製作循環時 程且修補成功率高等優點。 為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉較佳實施例’並配合所附圖式,作詳細說明如下。 【實施方式】 圖1為本發明一實施例之主動元件陣列基板的修補方 法步驟流程圖、圖2為本發明一實施例之主動元件陣列基 板的上視圖,而圖3A〜3E為沿著圖2之主動元件陣列基 板A-A’剖面線的製作流程示意圖。請同時參考圖i及圖 3A,首先如步驟S100,提供一基板21〇 ,並於基板21〇上 形成一第一圖案化導電層22〇。此第一圖案化導電層22〇 包括多條掃描線222以及多個與掃描線222對應相連的閘 極 224。 ”接著如圖1及圖3B示,於基板210上依序形成一閘 ,緣層230以及多個通道層(圖未示閘絕緣層23〇覆蓋 第了圖案化導電層220’且閘絕緣層23〇的材質為氮化矽。 通道層(圖未不)配置於閘絕緣層230上,且通道層(圖未示) 的材質包括非晶矽或多晶矽。 之後凊同時參考圖1、圖2及圖3C,於閘絕緣層23〇 ^依序形成了第二圖案化導電層240,以及一保護層250。 第-圖案化導電層24〇包括多條資料配線242以及多個源 極244/=極246。保護層250會覆蓋第二圖案化導電層240。 值知留意的是,如步驟Si1〇,於形成保護層25〇之後, 12 201040616O o The active device array substrate and the liquid crystal layer described above. The active device array substrate includes a substrate, a first patterned conductive layer, a gate insulating layer, a plurality of channel layers, a second patterned conductive layer, a protective layer, and a repair line. The first patterned conductive layer is disposed on the substrate, wherein the first patterned conductive layer comprises a plurality of scan lines and a plurality of gates. The gate insulating layer is disposed on the substrate, and the t gate insulating layer covers the first patterned conductive layer. The channel layer is placed on the gate insulating layer. The second acidified conductive layer is disposed on the gate insulating layer 丄, and the second patterned conductive layer includes a plurality of data wirings and a plurality of source/no ’ and at least one of the data lines. (4) The layer is disposed in the gate insulation 2', wherein the protective layer covers the second conductive layer, and has a plurality of connections, and some of the connections are exposed (four) lines: #料线路. The repair line is matched with the contact window of the towel and the lion filling the exposed data wiring. The material of the liquid crystal layer disposed on the opposite substrate and the active device array is composed of a material including the above-mentioned channel layer, including a liquid crystal display device not including the above-mentioned flat layer, and includes a material in the embodiment of the present invention. In the gas fossil eve. In one embodiment of the invention, germanium or polysilicon is used. The planar layer disposed on the protective layer in one embodiment of the invention is a photoresist in one embodiment of the invention. In the present invention, the above-mentioned wire element substrate; the pattern-formed halogen electrode layer disposed on the flat layer, wherein the vegetarian drink 201040616 ru/uu^u/\iz, i 1W 24342twf The .doc/n pole layer is electrically connected to the drain through a partial contact window. In the embodiment of the present invention, the active device array substrate further includes a halogen electrode layer disposed on the protective layer, wherein the halogen electrode layer is electrically connected to the drain through a portion of the contact window. In an embodiment of the invention, the active device array substrate further includes a color filter layer disposed on the halogen electrode layer. In the embodiment of the present invention, the pair of pure plates is a color filter substrate. In the embodiment of the present invention, the liquid crystal display device further includes a dynamic element array substrate, a liquid crystal layer, and a counter substrate. The present invention provides a method for repairing an active device array substrate, and the first method provides a substrate. Forming a patterned V-electrode layer, a gate insulating layer, a plurality of channel layers, a θ-positive conductive layer, and a protective layer, wherein the first patterning the plurality of idle electrodes and the second patterned conductive layer are sequentially formed on the substrate Layers include = wiring and more remarks / _. After that, the scan wiring and the data are arranged: after the substrate is mounted, and then the scan wiring and the data wiring are broken. The most-stacking method is formed on the protective layer - the repairing line - the nitriding 5 - the implementation of the invention, the material of the insulating layer of the above-mentioned gate includes a crystal stone trtr. In an embodiment, the material of the above-mentioned channel layer includes non-201040616 - --------IZ.1TW 24342twf.doc/n Having completed the invention to form a plurality of contact windows in the protective layer. In one embodiment of the invention, part of the contact window penetrates the protective layer and violently flows out of the material. Wiring. In one embodiment of the invention, a portion of the contact window extends through the protective layer and the gate insulating layer' and exposes the scan lines. Oo In one embodiment of the present invention, the method of forming the repair line includes laser chemical vapor deposition or injection of metal thin film (InjectMetalFilm). In the consistent embodiment of the present invention, after repairing the active device array substrate, A flat layer is formed on the protective layer. In an embodiment of the invention, the material of the flat layer comprises an organic photoresist. The invention of the invention, the implementation of the money, the domain of the silk component _ substrate: the shot repair method is further included in the flat layer field - the pixel f-pole layer, the inner-dano-electrode layer and by partial replacement with the polarity connection. In the embodiment of the present invention, the method for repairing the active device array substrate further includes forming a halogen element layer on the protective layer, and the layer of the electrode in the basin is connected to the drain electrode by a partial contact t Electrical connection. In the embodiment of the present invention, a color filter and a light layer are further included. Forming on the pole layer The present invention is used in the first and second patterned conductive sounds = two or not, and then the repair line is used, and the array substrate is processed in a process step. Therefore, the present invention is an active active element array substrate and its lightning 201040616 rvTW 24342twf.doc/n shot repairing method and liquid crystal display device, which has the advantages of cost saving, manufacturing cycle time and high repair success rate. The above described features and advantages of the present invention will become more apparent from the following description. 1 is a flow chart of a method for repairing an active device array substrate according to an embodiment of the present invention, and FIG. 2 is a top view of an active device array substrate according to an embodiment of the present invention, and FIGS. 3A to 3E are along the same. 2 schematic diagram of the manufacturing process of the active component array substrate A-A' hatching. Referring to FIG. 1 and FIG. 3A simultaneously, first, in step S100, a substrate 21 is provided, and a first patterned conductive layer 22 is formed on the substrate 21A. The first patterned conductive layer 22A includes a plurality of scan lines 222 and a plurality of gates 224 connected to the scan lines 222. Then, as shown in FIG. 1 and FIG. 3B, a gate, an edge layer 230 and a plurality of channel layers are formed on the substrate 210 (the gate insulating layer 23 is covered with the patterned conductive layer 220' and the gate insulating layer is formed). The material of the 23 〇 is tantalum nitride. The channel layer (not shown) is disposed on the gate insulating layer 230, and the material of the channel layer (not shown) includes amorphous germanium or polycrystalline germanium. After that, reference is also made to FIG. 1 and FIG. 2 . And in FIG. 3C, a second patterned conductive layer 240 is formed on the gate insulating layer 23, and a protective layer 250. The first patterned conductive layer 24 includes a plurality of data lines 242 and a plurality of sources 244/ = pole 246. The protective layer 250 will cover the second patterned conductive layer 240. It is to be noted that, as in step Si1, after forming the protective layer 25, 12 201040616

1Z1TW 24342twf.doc/n 我們便可以對基板21G進行陣列測試,以檢測掃描配線2 2 2 及資料配線242的斷線。特別的是,由於掃描配線222與 負料配線242已形成於基板21〇上,因此當我們在對基板 210進行陣列測试時,可以同時察覺到掃描配線與資 料配線242的斷線。與習知須於對第一金屬層與第二 金屬層140分別進行兩次的陣列測試相較,我們僅對基板 210進行一次陣列測試即可,不但可以減少主動元件陣列 ❹ 基板的製作循環時程,也可減少自動化物料處理系統搬運 主動元件陣列基板的次數。 當檢測到基板210上的掃描配線222或資料配線242 斷線時我們會於保瘦層250上形成—修補線260,以修 補斷線的掃描配線222或資料配線242 ’如步驟S120。 詳細地來說,請參考圖1及圖3D,如步驟S112 ,當 k測到基板210上的掃描配線222斷線,我們可以利用雷 射钕刻於保護層250形成多個接觸窗252。 ❼值得留意的是,接觸窗252會貫穿閘絕緣層230,並 暴硌出斷線的掃描配線222。然後,利用雷射化學氣相沉 積法或是注入金屬薄膜法,於保護層250上形成一修補線 26〇修補線260會填入接觸窗252,以修補斷線的掃描配 線 222。 圖4為圖2之B-B’剖面線的資料配線修補過後的剖面 圖。請參考圖4,當檢測到基板210上的資料配線242斷 線,修補資料配線242與修補掃描配線222的步驟大致相 同。其不同之處在於:當利用雷射蝕刻以形成接觸窗252, 13 201040616 1 \j i rw 24342twf.doc/n 2異?!雷!1功率使得接觸窗252,僅貫穿保護層25〇,便 會暴露出貧料配線242。 之後’同樣地利用雷射化學氣相 薄膜法於保護層25〇上形祕 f疋/主入孟屬 的資料配線242 〇 7私補線,便能修補斷線 —別!!疋,當同時檢測到掃描配線222與資料配線242 !射ϊ刻可同時戦僅貫穿保護層250的接 觸向252及更向下貫穿閘絕緣層挪之接觸窗252。因此, 於同-製程步驟中,可同時修補斷線的掃描配線222與資 料配線242。此外,當作完此—雷射修補製程後,由於後 續是黃光微影製歸h_ithGgmphyp職㈣,在黃光 製程時將會先清洗餘,仙並不需要在卜洗 製程,可以有效的節省製作成本。 月无 由上述可知’我們車父習知減少了 一次的陣列測試以及 兩次清洗的步驟,同時也減少了利用自動化物料處理系統 搬運基板的:欠數,S此能達卿省成本及製作循環時程之 工時的目的。 此外,利用雷射化學氣相沉積法或是注入金屬薄膜 法,都是將修補線260或260,填入接觸窗252或252, 中’避免如先前技射若在第二金屬層發生第—金屬層斷 線處位於第一金屬層與第二金屬層跨線區域,修補會造成 短路的缺點。因此可確實地修復掃描配線222或資二配線 242,提升主動元件陣列基板的修補良率。 之後請參考圖1、圖2及圖3E,如步驟S122,於保護 14 201040616 Z1TW 24342twf.doc/n 層250上依序形成平坦層280及畫素電極層270,其中平 坦層280的配置是為了避免修補線26〇會與畫素電極層 270電性連接。此外’平坦層28〇更可以使晝素電極層27〇 配置在較高之平坦的表面,有助於降低金屬導線與晝素電 極間之寄生電容的產生,所以在設計上可以設計較大面積 的晝素電極,可以有效的提高開口率。 另外’晝素電極層270會藉由部分的接觸窗252與汲 ❹ 極246電性相連。如此,便製作出本實施例之主動元件陣 列基板200。 我們更可將此主動元件陣列基板2〇〇與一對向基板 300組立’並在主動元件陣列基板200與對向基板300之 間貫注液晶分子,以形成一液晶顯示裝置35〇,如圖5示。 對向基板300可為一彩色濾光基板。此外,我們也可 以如步驟S124’在晝素電極層270上形成一彩色濾光層(未 圖示)’而對向基板3〇〇便為一透明基板。 另外,若液晶顯示裝置350採用穿透式或半穿透半反 〇 射式設計時,還可包括一背光模組360,而主動元件陣列 基板200、對向基板3〇〇與液晶層310配置於背光模組36〇 上方。液晶顯示裝置350便可以使用背光模組36〇所提供 之光線進行顯示。 〃 綜上所述,本發明之主動元件陣列基板及其修補方法 與液晶顯示裝置,至少具有下列優點: 一、於掃描配線及資料配線皆配置於基板上後才需進行陣 列測試及修補,可減少製作循環時程。 15 24342twf.doc/n 201040616 、於修補後可叫㈣續黃光微影 洗,避免額外清洗設備設置。 野基板進仃清 僅需一次的陣列測試及修補,有效 ==板的次數’進而達到節省電:料處 =ϊ率的方式將修補線填入接觸窗中,有效1Z1TW 24342twf.doc/n We can perform an array test on the substrate 21G to detect the disconnection of the scan wiring 2 2 2 and the data wiring 242. In particular, since the scan wiring 222 and the negative wiring 242 are formed on the substrate 21, when the array test is performed on the substrate 210, the disconnection of the scan wiring and the data wiring 242 can be simultaneously perceived. Compared with the conventional array test of the first metal layer and the second metal layer 140, we can perform only one array test on the substrate 210, which can reduce the fabrication cycle of the active device array 基板 substrate. The process also reduces the number of times the automated material handling system handles the active component array substrate. When it is detected that the scan wiring 222 or the data wiring 242 on the substrate 210 is broken, a repair line 260 is formed on the thinned layer 250 to repair the broken scan wiring 222 or the data wiring 242' as in step S120. In detail, referring to FIG. 1 and FIG. 3D, in step S112, when k detects that the scan wiring 222 on the substrate 210 is broken, we can use the laser to etch the protective layer 250 to form a plurality of contact windows 252. It is worth noting that the contact window 252 will penetrate the gate insulating layer 230 and smash the broken scan wiring 222. Then, a repair line is formed on the protective layer 250 by a laser chemical vapor deposition method or a metal thin film method. The repair line 260 is filled in the contact window 252 to repair the broken scan wiring line 222. Fig. 4 is a cross-sectional view showing the data wiring of the line B-B' of Fig. 2 after repair. Referring to FIG. 4, when it is detected that the data wiring 242 on the substrate 210 is broken, the steps of repairing the data wiring 242 and repairing the scanning wiring 222 are substantially the same. The difference is that when laser etching is used to form the contact window 252, 13 201040616 1 \j i rw 24342twf.doc/n 2? ! The Thunder! 1 power causes the contact window 252 to penetrate only the protective layer 25A, exposing the poor wiring 242. After that, the same method can be used to repair the broken line by using the laser chemical vapor film method on the protective layer 25 形 秘 疋 主 主 主 主 主 主 私 — — — — — — — — — — — — — — — — — — — — — — Detecting the scan wiring 222 and the data wiring 242 can simultaneously traverse only the contact 252 of the protective layer 250 and the contact window 252 that penetrates the gate insulating layer downward. Therefore, in the same-process step, the broken scan wiring 222 and the material wiring 242 can be repaired at the same time. In addition, as a result of this - after the laser repair process, because the follow-up is the yellow light micro-shadow system h_ithGgmphyp job (four), in the Huangguang process will be cleaned first, Xian does not need to be in the process, can effectively save production costs . There is no such thing as the above. 'Our car father knows that the array test and the two cleaning steps are reduced once, and the substrate handling by the automated material handling system is reduced: the number of the substrate is reduced. The purpose of the time of work. In addition, the laser chemical vapor deposition method or the metal thin film method is used to fill the repair line 260 or 260 into the contact window 252 or 252, to avoid the occurrence of the first metal layer if the prior art is generated. The breakage of the metal layer is located in the area where the first metal layer and the second metal layer are over the line, and repairing may cause short circuit. Therefore, the scanning wiring 222 or the secondary wiring 242 can be reliably repaired, and the repairing yield of the active device array substrate can be improved. Referring to FIG. 1 , FIG. 2 and FIG. 3E , in step S122 , a flat layer 280 and a pixel electrode layer 270 are sequentially formed on the protection layer 14 201040616 Z1TW 24342 twf.doc/n layer 250, wherein the flat layer 280 is configured for The repair line 26 is prevented from being electrically connected to the pixel electrode layer 270. In addition, the 'flat layer 28' can make the halogen electrode layer 27〇 disposed on a higher flat surface, which helps to reduce the generation of parasitic capacitance between the metal wire and the halogen electrode, so a larger area can be designed in design. The halogen electrode can effectively increase the aperture ratio. In addition, the germanium electrode layer 270 is electrically connected to the germanium electrode 246 by a portion of the contact window 252. Thus, the active device array substrate 200 of the present embodiment is fabricated. The active device array substrate 2 can be assembled with the pair of substrates 300 and the liquid crystal molecules can be injected between the active device array substrate 200 and the opposite substrate 300 to form a liquid crystal display device 35, as shown in FIG. Show. The opposite substrate 300 can be a color filter substrate. Further, we may form a color filter layer (not shown) on the pixel electrode layer 270 as in step S124' and the counter substrate 3 may be a transparent substrate. In addition, when the liquid crystal display device 350 adopts a transmissive or transflective half-back radiation design, a backlight module 360 may be further included, and the active device array substrate 200, the opposite substrate 3〇〇, and the liquid crystal layer 310 are disposed. Above the backlight module 36〇. The liquid crystal display device 350 can display the light provided by the backlight module 36. In summary, the active device array substrate and the repairing method thereof and the liquid crystal display device of the present invention have at least the following advantages: 1. After the scan wiring and the data wiring are all disposed on the substrate, the array test and repair are required. Reduce the production cycle time. 15 24342twf.doc/n 201040616, after repairing, you can call (4) to continue the yellow light micro-washing to avoid additional cleaning equipment settings. The field substrate is cleaned and only needs to be tested and repaired once. It is effective == the number of plates' and then saves electricity. The material = the rate of the defect fills the repair line into the contact window.

雖然本發明已以較佳實施例揭露如上,然其 限定本發明,任何所屬技術領域巾具有通料識者 脫離本發明之精神和範圍内,當可作些許之更動與潤 因此本發明之賴範圍當視後附之_料鄕騎界定者 急進。 【圖式簡單說明】 圖1為本發明一實施例之主動元件陣列基板的修補方 法步驟流程圖。 圖2為本發明一實施例之主動元件陣列基板的上視 圖。 圖3Α〜3Ε為沿著圖2之主動元件陣列基板Α-Α,剖面 、線的雷射修補方法的流程示意圖。 圖4為圖2之Β-Β,剖面線的資料配線修補過後的剖面 圖。 圖5為液晶顯示裝置的示意圖。 16 201040616 ^ 1TW 24342twf.doc/n Ο ο 【主要元件符號說明】 S100 ··提供基板,並於基板上依序形成第— 電層、間絕緣層、通道層、第二_化導電相及保護芦 S11G .於掃描配線與資料輯形成於基板 ^ 知描配線與資料配線是否斷線 檢和 S112 :於保護層形成接觸窗 S120 :於保護層上形成修補線,以修補主動元件 暴板 S122 :於賴層上依序軸平坦層及4素電極層 S124 :於晝素電極層上形成彩色濾光層 θ 100 :薄膜電晶體陣列基板 110 120 130 140 150 200 220 222 224 230 240 242 210 ·基板 第一金屬層 閘絕緣層 閘絕緣層 保護層 主動元件陣列基板 第一圖案化導電層 掃描線 閘極 閘絕緣層 第一圖案化導電層 資料配線 244/246 :源極/没極 17 24342twf.doc/n 201040616 250 :保護層 252、252’ :接觸窗 260、260’ :修補線 270 :晝素電極層 280 :平坦層 300 :對向基板 310 :液晶層 350 :液晶顯示裝置 〇While the invention has been described above in terms of the preferred embodiments of the present invention, the scope of the present invention is intended to be within the spirit and scope of the invention. When the attached _ 鄕 界定 界定 界定 界定 界定 界定 界定 界定 界定 界定BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing the steps of a repair method of an active device array substrate according to an embodiment of the present invention. Fig. 2 is a top plan view of an active device array substrate in accordance with an embodiment of the present invention. 3Α-3Ε are schematic flow diagrams of the laser repairing method of the active device array substrate Α-Α, the cross section and the line along the FIG. Fig. 4 is a cross-sectional view of the 配线-Β of Fig. 2 after the data line of the hatching is repaired. Fig. 5 is a schematic view of a liquid crystal display device. 16 201040616 ^ 1TW 24342twf.doc/n Ο ο [Description of main component symbols] S100 ·· Providing a substrate, and sequentially forming a first layer, an interlayer insulating layer, a channel layer, a second conductive phase and protection on the substrate Lu S11G. The scanning wiring and the data are formed on the substrate. ^Whether the wiring and the data wiring are disconnected and S112: The contact window S120 is formed on the protective layer: a repairing line is formed on the protective layer to repair the active component storm board S122: Forming an axis flat layer and a 4-element electrode layer S124 on the layer: forming a color filter layer θ 100 on the pixel electrode layer: thin film transistor array substrate 110 120 130 140 150 200 220 222 224 230 240 242 210 · substrate First metal layer gate insulating layer gate insulating layer protective layer active device array substrate first patterned conductive layer scanning line gate gate insulating layer first patterned conductive layer data wiring 244/246: source/dice pole 17 24342twf.doc /n 201040616 250 : Protective layer 252, 252': contact window 260, 260': repair line 270: halogen electrode layer 280: flat layer 300: opposite substrate 310: liquid crystal layer 350: liquid crystal display device

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Claims (1)

JTW 24342twf.doc/n 201040616 七、申請專利範圍: 1.—種主動元件陣列基板,包括: 一基板; 第圖案化導電層,配置於該基板上,其中該第一 圖案化導電層包括多條掃描配線及多個_,而至少其中 一條掃描配線斷線; 八 〇 ❹ 峡緣;I,配置於絲板上,其巾該舰緣層覆蓋 S亥第一圖案化導電層; 多,通道層,配置於該閘絕緣層上; 一 第—圖案化導電層,配置於該閘絕緣層上,而該第 —圖^化導電層包括乡條資料配線及乡觸極/没極; 配置於該閘層上,其中該保護層覆蓋 圖案化‘電層,且具有多個接觸窗,而部分該些接 觸向亚^該閘絕緣層以暴露出斷線之該掃描配線;以及 ’配置於該保護層上,其中該些修補線 鱗接職,讀麵掃描配線。 第1項所述之线元件陣列基板, ,、中該閘絕緣層之材質包括氮化石夕。 其二it:::1,,述之主動元件陣列基板’ 質匕括非晶梦或多晶秒。 更包括如利動元件陣列基板’ 其中圍二=,主動元件陣列基板’ 19 24342twf.doc/n 201040616 更包i如一=:圍第4項所述之主動元件陣列基板, 極層透過部分該些接觸窗與紐極電性連接^旦素包 更包==圍:1項所述之主動元件陣列基板, 晝素雷』Γ素層’配置於魏護層上,其中該 ’、極層透過部分該些接觸窗與該汲極電性連接。 更包括=專/Γ!圍第7項所述之主動元件陣列基板, 节色濾光層,配置於該晝素電極層上。 種液晶顯示裝置,包括: 對向基板; 一主動=件_基板,配置於該對向基板下,包括: 一基板; 第-圖化導電層’配置於該基板上,其中該 至小¥電層包括多條掃描配線及多個閘極,而 至夕其中—條掃描配線斷線; —閘絕緣層’配置於該基 覆盖該第-圖案化導電層; 緣層 f個通道層’配置於該閘絕緣層上; 診圖案化導電層’配置於該閘絕緣層上,而 心了0、化導電層包括多條資料配線及多個源極/ 覆蓋該安配緣層上’其中該保護層 分兮I接觸三木化¥電層,且具有多個接觸窗,而部 ι接觸心貫穿該閘絕緣層以暴露出斷線之該掃 20 201040616 -ί 1TW 24342twf.doc/n 描配線; 至少一修補線,配置於該保護層上 補線填入暴露該掃描配線之該些接該些修 描配線;以及 以修補該掃 之間:液晶層,配置於該對向基板與該主動元件陣列基板 10. 如申請專利範圍第9項所 Ο 〇 該閘絕緣層讀質包括氮切。 4 ^置,其甲 11. 如申請專利範圍第9項所述之液 該通道層之㈣包_轉❹㈣。喊置,其中 - 專利範園第9項所述之液晶 兀件^基由板更包括—平坦層,配置於該保護ί上動 13. 如申請專利範圍第12 中該平坦層之材質包括有機光阻。夜日曰,,、具不裝置,其 14. 如申請專利範圍第12項所述之液 動元件陣列基板更包括一金辛 顯不衣置,主 上,JL㈣圭丰w a素電極層’配置於該平坦層 連接 極層透過部分該些接觸窗與紐極電性 15. 如申請專利範圍第9項所述之液晶顯 兀件陣列基板更包括一圖荦化金 主動 S接層透過部分該些接觸窗與該汲極電 元件^範圍第9項所述之液晶顯示裝置,主動 土板更匕括-衫色濾光層,配置於該畫素電極層 201040616 w -_ ------ i W 24342twf.doc/n 17. 如申請專利範圍第9項所述之液晶顯示裝置,其中 該對向基板為彩色濾光基板。 18. 如申請專利範圍第9項所述之液晶顯示裝置,更包 括一背光模組,其中該主動元件陣列基板、該液晶層與該 對向基板配置於該背光模組上方。 19·一種主動元件陣列基板,包括: 一基板; 一第一圖案化導電層’配置於該基板上,其中該第一 圖案化導電層包括多條掃描配線及多個閘極; 一閘絕緣層’配置於該基板上,其中該閘絕緣層覆蓋 該第一圖案化導電層; 多個通道層,配置於該閘絕緣層上; 一第二圖案化導電層,配置於該閘絕緣層上,而該第 二圖案化導電層包括多條資料配線及多個源極\汲極,而至 少其中一條資料配線斷線; 一保護層’配置於該閘絕緣層上,其中該保護層覆蓋 該第二圖案化導電層,且具有多個接觸窗,而部分該些接 觸窗暴露出斷線之該資料配線;以及 至少一修補線’配置於該保護層上,其中該些修補線 填入暴露該資料配線之該些接觸窗,以修補該資料配線。 20. 如申請專利範圍第19項所述之主動元件陣列基 板,其中該閘絕緣層之材質包括氮化矽。 21. 如申請專利範圍第19項所述之主動元件陣列基 22 201040616 ^SITW 24342twf.doc/n 板,其中該通道層之㈣包麵砂或多晶石夕。 22.如申請專利範圍第19 板,更包括-平坦層,配置於該 動凡件陣列基 23·如令請專利範園第22 板,其中該平坦層之材質包括有^^主〜件陣列基 ^. &quot;L%VZ7 f 〇 又㈣極層’配置於坦 ^透申過分該些接觸窗與該沒極電^連接 板,=括項所述之主動ί件陣列基 過部分該接其 板 更包括^項所述之主動元件陣列基 --種液晶==該畫素電極層上。 一對向基板,· ❹ 一主動=陣職,配置物㈣板下,包括: 第—圖案化導電層’配置於該基板上,其㈣ 其中該閘絕緣層 =層包括多條掃描配線與多個問極; 閣錢層,配置於該基板上, 覆盖該第—圖案化導電層; 多=通道層,配置賴_ 該第二圖案化導μ包^配λ於該閑絕緣層上,而 祕,而至少其中」條資二:了二配線及多個源極、 23 24342twf.doc/n 201040616 保護層,配置於該閘絕緣層上,其中嗲 分,導電層’且具有多個接。::ΐ 刀該些接觸自暴露出斷線之該資料配線; μ 至少一修補線,配置於該保護層上,其 =線填入暴露該資料配線之該些接觸窗,以補^二 料配線;以及 丨/補这貝 之間 一液晶層’配置於轉向基板與該主動元件卩車列基板 0 t Μ專彳】範圍第27項所述之液Bag顯示I置,立 中该閘絕緣層之材質包括氮化秒。 ’、 29.如申3月專利範圍第27項所述之 中該通道層之材質包括非晶石夕或多晶石夕。裝置其 動元圍第+27項所述之液晶顯示裝置,主 更匕括—平坦層,配置於該保護層上。 ㈣购,其 動元二 二:之裝置’主 上,1㈣圭♦雷Μ A 4素電極層’配置於該平坦層 連接:中1素電極層透過部分該些接觸窗與概極電性 33.如申請專利範圍第27項所述之液晶顯 元件陣列基板更包括—圖宰 乂 幾層上,豆中呤蚩去^化旦素電極層,配置於該保 電性連接。極層透過部分該些接觸窗與紐極 24 201040616 21TW 24342twf.doc/n 34. 如申請專利範圍第27項所述之液晶顯示裝置,主 動元件陣列基板更包括一彩色濾光層,配置於該晝素電極 層上。 35. 如申請專利範圍第27項所述之液晶顯示裝置,其 中該對向基板為彩色濾光基板。 〃 36. 如申請專利範圍第27項所述之液晶顯示裝置,更 包括一背光模组,其中該主動元件陣列基板、該液晶層與 ❹ 該對向基板配置於該背光模組上方。 37. 種主動元件陣列基板的修補方法,包括: ♦提供一基板,並於該基板上依序形成一第一圖案化導 私層、一閘絕緣層、多個通道層、一第二圖案化導電層以 及:保護層,其中該第一圖案化導電層包括多條掃描西曰己線 及多個閘極’而該第二圖案化導電層包括多條資料配線及 多個源極/没極; 人於該些掃描配線與該些資料配線形成於該基板上後, 〇 檢測該些掃描配線與該些資料配線是否斷線; 保羞層上形成一修補線,以修補該主動元件陣列 基板。 38·如申請專利範圍帛37項所述之主動元件陣列基板 、夕補方法,其中該閘絕緣層之材質包括氮化矽。 39:如中請專鄉圍第37項所狀絲元件陣列基板 、夕補方法,其中該通道層之材質包括非晶石夕或多晶石夕。 的|40.如申凊專利範圍第37項所述之主動元件陣列基板 士二補方去,於形成該保護層之後,更包括於該保護層形 或多個接觸窗。 25 201040616iW 2一 41‘如申請專利範圍第4〇項所述之主動元件陣列基板 的修補方法’其中部分該些接觸窗貫穿該保護層,並暴露 出該資料配線。 ^ 42.如申請專利範圍第40項所述之主動元件陣列基板 的修補方法,其中部分該些接觸窗貫穿該保護層及該閘絕 緣層,並暴露出該掃描配線。 、 43.如申請專利範圍第37項所述之主動元件陣列基板 的修補方法’其中形成該修補線的方法包括雷射化學氣相 沉積法或是注入金屬薄膜法。 44·如申請專利範圍第37項所述之主動元件陣列基板 =補方法,於修觀主動元件_基板後,更包括於該 呆5蒦層上形成一平坦層。 如申請專·圍第44 _述之絲元件陣列基板 &gt;補方法’該平坦層的材質包括有機光阻。 的修ίΐ、;!請專利範圍第44項所述之主動元件陣列基板 中兮蚩去1,更包括於該平坦層上形成一晝素電極層,苴 接Ϊ電極層並藉由部分該些接觸s以與該汲極電性^ 的雷Ϊ專利範圍第37項所述之主動元件陣列基板 層,其,更包括於該保護層上形成一晝素電極 電性連接Υ旦’、電極層並藉由部分該些接觸窗以與該汲極 的修請專利範圍第47項所述之主動元件陣列基板 層。、更包括於該晝素電極層上形成一彩色濾光 26JTW 24342twf.doc/n 201040616 VII. Patent application scope: 1. An active device array substrate, comprising: a substrate; a patterned conductive layer disposed on the substrate, wherein the first patterned conductive layer comprises a plurality of strips Scanning wiring and a plurality of _, and at least one of the scanning wirings is broken; the octagonal gorge; I, disposed on the silk plate, the towel edge layer covering the first patterned conductive layer of the Shai; Disposed on the gate insulating layer; a first patterned conductive layer disposed on the gate insulating layer, wherein the first conductive layer comprises a township data wiring and a town pole/no pole; On the gate layer, wherein the protective layer covers the patterned 'electric layer, and has a plurality of contact windows, and some of the contacts are adjacent to the gate insulating layer to expose the scan line of the broken line; and 'configured in the protection On the layer, the repaired line scales are taken over, and the surface scan lines are read. The wire element array substrate according to item 1, wherein the material of the gate insulating layer comprises nitrite. The second it:::1, described in the active device array substrate, includes amorphous dreams or polycrystalline seconds. Further includes an array of substrate elements such as a slewing element, wherein the singularity of the active device array substrate is the same as that of the active device array substrate as described in item 4, and the polar layer is partially transparent. The contact window and the neopolar electrical connection are further included in the package: the active device array substrate described in item 1, the 昼素雷ΓΓ素 layer is disposed on the Wei layer, wherein the 'pole layer A portion of the contact windows are electrically connected to the drain. Furthermore, the active device array substrate, the color filter layer, and the color filter layer are disposed on the halogen electrode layer. The liquid crystal display device includes: a counter substrate; an active=piece_substrate disposed under the opposite substrate, comprising: a substrate; a first patterned conductive layer disposed on the substrate, wherein the small to electric The layer includes a plurality of scan lines and a plurality of gates, and wherein the scan lines are broken; the gate insulating layer is disposed on the base to cover the first patterned conductive layer; the edge layer f channel layers are disposed on The gate insulating layer is disposed on the gate insulating layer, and the core is 0. The conductive layer includes a plurality of data wires and a plurality of sources/covering the edge layer. The layer is divided into three layers to contact the three layers of wood, and has a plurality of contact windows, and the portion ι contacts the through the gate insulating layer to expose the wire to the wire. 2010/04/16 - ί 1TW 24342twf.doc/n a repairing line disposed on the protective layer, filling the wiring for exposing the scan wiring; and repairing the scan between the scan: a liquid crystal layer disposed on the opposite substrate and the active device array Substrate 10. As claimed The nine billion Ο the gate insulating layer comprises nitrogen reading quality cut. 4 ^ Set, its A 11. If the liquid mentioned in the scope of claim 9 is the (four) package of the channel layer _ turn ❹ (four). The liquid crystal element according to the ninth aspect of the patent garden, the base plate further includes a flat layer, which is disposed on the protection ί. 13. The material of the flat layer includes organic Light resistance. The nighttime 曰, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The liquid crystal display array substrate of the ninth aspect of the present invention further includes a gold-plated active S-layer transparent portion. The contact window and the liquid crystal display device of the ninth aspect of the present invention, the active earth plate further comprises a shirt color filter layer disposed on the pixel electrode layer 201040616 w -_ ----- The liquid crystal display device of claim 9, wherein the opposite substrate is a color filter substrate. 18. The liquid crystal display device of claim 9, further comprising a backlight module, wherein the active device array substrate, the liquid crystal layer and the opposite substrate are disposed above the backlight module. An active device array substrate, comprising: a substrate; a first patterned conductive layer ′ disposed on the substrate, wherein the first patterned conductive layer comprises a plurality of scan lines and a plurality of gates; </ RTI> disposed on the substrate, wherein the gate insulating layer covers the first patterned conductive layer; a plurality of channel layers disposed on the gate insulating layer; a second patterned conductive layer disposed on the gate insulating layer The second patterned conductive layer includes a plurality of data wires and a plurality of source and drain electrodes, and at least one of the data wires is broken; a protective layer is disposed on the gate insulating layer, wherein the protective layer covers the first layer The second conductive layer is patterned, and has a plurality of contact windows, and some of the contact windows expose the data wiring of the broken line; and at least one repair line is disposed on the protective layer, wherein the repair lines are filled and exposed The contact windows of the data wiring are used to repair the data wiring. 20. The active device array substrate of claim 19, wherein the material of the gate insulating layer comprises tantalum nitride. 21. The active device array substrate 22 201040616 ^SITW 24342 twf.doc/n plate according to claim 19, wherein the channel layer is (4) coated sand or polycrystalline. 22. For example, the 19th board of the patent application scope, further includes a flat layer disposed on the movable object array base 23, such as the 22nd board of the patent application garden, wherein the flat layer material comprises a ^^ main-piece array The base ^. &quot;L%VZ7 f 〇 and (four) pole layer 'configuration in the Tan ^ 透 透 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到 到The board further includes an active device array base according to the item - liquid crystal == on the pixel electrode layer. a pair of substrates, ❹ an active = lineup, configuration (4) under the board, including: a first - patterned conductive layer 'disposed on the substrate, (4) wherein the gate insulating layer = layer includes a plurality of scanning wiring and a layer of money, disposed on the substrate, covering the first patterned conductive layer; a plurality of = channel layers, configured by _ the second patterned via λ is provided on the dummy insulating layer, and Secret, and at least one of the two: two wiring: two wiring and multiple sources, 23 24342twf.doc / n 201040616 protective layer, placed on the gate insulation layer, which split, conductive layer 'and has multiple connections. ::ΐThe contact with the data wire from the exposed wire breakage; μ at least one repairing wire is disposed on the protective layer, and the = wire is filled in the contact windows exposing the data wiring to supplement the two materials Wiring; and 丨/complementing a liquid crystal layer between the shells is disposed on the steering substrate and the active component of the brake train substrate 0 t ΜSpecial] The liquid Bag shown in item 27 of the range shows I, and the gate is insulated The material of the layer includes nitriding seconds. </ RTI> 29. The material of the channel layer as described in claim 27 of the patent scope of March includes amorphous or polycrystalline stone. The liquid crystal display device of the device of the present invention is further characterized in that the liquid crystal display device is arranged on the protective layer. (4) Purchase, its moving element 22: The device 'mainly, 1 (four) Gui ♦ Thunder A 4 element electrode layer 'disposed in the flat layer connection: the middle 1 electrode layer transmits part of the contact window and the electric potential 33 The liquid crystal display device array substrate according to claim 27, further comprising: a plurality of layers on the layer of the sputum, and the electrode layer of the decantine in the bean is disposed on the electrically conductive connection. The active layer array substrate further includes a color filter layer disposed on the liquid crystal display device according to claim 27, wherein the active device array substrate further comprises: On the halogen electrode layer. The liquid crystal display device of claim 27, wherein the opposite substrate is a color filter substrate. The liquid crystal display device of claim 27, further comprising a backlight module, wherein the active device array substrate, the liquid crystal layer and the opposite substrate are disposed above the backlight module. 37. A method for repairing an active device array substrate, comprising: ♦ providing a substrate, and sequentially forming a first patterned conductive layer, a gate insulating layer, a plurality of channel layers, and a second patterning on the substrate. a conductive layer and a protective layer, wherein the first patterned conductive layer comprises a plurality of scanning lines and a plurality of gates, and the second patterned conductive layer comprises a plurality of data lines and a plurality of source/dice After the scan lines and the data lines are formed on the substrate, the 〇 detects whether the scan lines and the data lines are broken; a repair line is formed on the shy layer to repair the active device array substrate . 38. The active device array substrate and the evening compensation method according to claim 37, wherein the material of the gate insulating layer comprises tantalum nitride. 39: For example, please refer to the 37th item of the silk element array substrate and the evening compensation method, wherein the material of the channel layer includes amorphous stone or polycrystalline stone. 40. The active device array substrate as described in claim 37 of the patent application, after the formation of the protective layer, is further included in the protective layer shape or a plurality of contact windows. A method of repairing an active device array substrate as described in claim 4, wherein a part of the contact windows penetrate the protective layer and expose the data wiring. The method of repairing an active device array substrate according to claim 40, wherein a part of the contact windows penetrate the protective layer and the gate insulating layer and expose the scanning wiring. 43. A method of repairing an active device array substrate as described in claim 37, wherein the method of forming the repairing wire comprises a laser chemical vapor deposition method or an injection metal thin film method. 44. The active device array substrate=compensation method according to claim 37, after the repairing the active device_substrate, further comprises forming a flat layer on the layer of the doped layer. For example, the material of the flat layer is made of an organic photoresist.修 ΐ ; ; ; ; ; ; 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动 主动The active device array substrate layer described in claim 37, which further includes a halogen electrode electrically connected to the protective layer, and the electrode layer is electrically connected to the electrode layer. And by means of a part of the contact windows, the active device array substrate layer described in claim 47 of the bungee. And further comprising forming a color filter on the halogen electrode layer.
TW98115027A 2009-05-06 2009-05-06 Active device array substrate, repairing method thereof and liquid crystal display device TW201040616A (en)

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CN114035384A (en) * 2021-10-27 2022-02-11 滁州惠科光电科技有限公司 Array substrate circuit repairing method and device and array substrate

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CN114035384A (en) * 2021-10-27 2022-02-11 滁州惠科光电科技有限公司 Array substrate circuit repairing method and device and array substrate
CN114035384B (en) * 2021-10-27 2023-09-01 滁州惠科光电科技有限公司 Array substrate circuit repairing method and device and array substrate

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