TW201040136A - Alicyclic compound, method for manufacturing same, composition containing same and resist pattern formation method using same - Google Patents

Alicyclic compound, method for manufacturing same, composition containing same and resist pattern formation method using same Download PDF

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TW201040136A
TW201040136A TW99102443A TW99102443A TW201040136A TW 201040136 A TW201040136 A TW 201040136A TW 99102443 A TW99102443 A TW 99102443A TW 99102443 A TW99102443 A TW 99102443A TW 201040136 A TW201040136 A TW 201040136A
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Shinji Tanaka
Miki Murakami
Kazuya Fukushima
Naoya Kawano
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Idemitsu Kosan Co
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07JSTEROIDS
    • C07J9/00Normal steroids containing carbon, hydrogen, halogen or oxygen substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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Abstract

Disclosed are an alicyclic compound in which a cholic acid ester structure-containing group is bound to an adamantane skeleton, method for manufacturing the same, composition containing the same, and resist pattern formation method using the same, that provide an alicyclic compound which has superior solvent properties, light exposure sensitivity, resolution, roughness, and heat resistance, etc., and especially excellent dissolution inhibiting effect against development fluids, and is useful as a positive photoresist monomer or dissolution inhibitor used in semiconductor device fabrication, and that provide a method for manufacturing the same, composition containing the same, and resist pattern formation method using the same.

Description

201040136 六、發明說明: 【發明所屬之技術領域】 本發明係關於脂環式化合物、該化合物的製造方法、 含有該化合物的組成物及使用其之光阻圖型的形成方法, 更詳言之,此係關於具正型光阻機能之脂環式化合物,意 即’通常爲具有對鹼溶液之溶解抑制效果,但會因受到光 酸產生劑等所導致之酸分解而成爲鹼可溶性之脂環式化合 0 物、該化合物的製造方法、含有該化合物的組成物及使用 其之光阻圖型的形成方法。 【先前技術】 近年來,隨著半導體元件的微細化之進展,在其製造 中之光微影步驟中,隨之也被要求更加微細化,而種種使 用對應於KrF、ArF或是F2準分子雷射光等之短波長的照 射光之光阻材料來使微細圖型形成之方法,備受檢討。而 〇 且,可對應前述準分子雷射光等之短波長的照射光之新光 阻材料的出現更是備受期望。 光阻材料方面,以往雖有爲數頗多的以苯酚樹脂作爲 基底之聚合物陸續地開發而來,但此等之材料因含芳香族 環,故光的吸收大,而未能獲得僅可因應微細化之圖型精 度。 又,在具有溶解抑制效果之化合物方面,雖亦可使用 以二疊氮萘醌(DNQ )爲代表之苯酚系化合物,但與上述 聚合物同樣地,因在短波長的照射光即發生光的吸收,故 -5- 201040136 在微細圖型的形成上有其界限。 因此,在以ArF準分子雷射所行之半導體製造中的感 光性光阻方面,係提案有使如2-甲基-2-金剛烷基甲基丙 烯酸酯之類的具有脂環式骨架之聚合性化合物共聚所成之 聚合物(例如,參考專利文獻1 )。 但是,伴隨著微細加工技術更進一步的發展,現階段 若僅以過往的技術而欲實現3 2nm以下之線寬幅,並不能 解決在曝光感度、解像度、圖型形狀、曝光深度、表面粗 糙等之種種要求要有的性能。具體而言,稱爲LER、LWR 之圖型表面的粗度(粗糙度)或隆起等平滑性的問題之存 在已曰漸凸顯。又,近年來在液浸曝光之方法上,也常見 起因於液浸媒介物所導致之光阻圖型的瑕疵=缺陷等之顯 像不良。再者,在使用13.5nm之極端紫外線(EUV )的 半導體製造步驟中,爲了使生產量向上提昇,更希望開發 高感度的光阻。 因習知技術的驅使,雖可改善各自所要求之性能,但 要同時達成位在互相權衡(trade-off )的關係下之「曝光 感度、解像度、表面粗糙」困難重重。其中,被稱爲低分 子光阻之單分子化合物係與習知之聚合物系化合物不同, 不僅是在曝光感度與解像度方面,更期待能作爲來自其分 子大小之表面粗糙大幅減低之材料。 低分子光阻方面,例如專利文獻2〜7中,係開發有 酣甲酉荃環狀聚合物(caHxarene) 、calixresorcinarene 等 之聚苯酚系的低分子化合物作爲微影用之半導體製造用材 -6- 201040136 料。此等雖容易合成,但因具有芳香環而於KrF或ArF之 短波長的光源上會吸收光而無法使用。通常,可用於曝光 之波長限於高壓水銀燈之g線或i線、或是軟X線。 因而,提案有幾個關於應可適用現行之最先端的量產 用曝光技術ArF準分子雷射的種種脂環式低分子化合物( 參考專利文獻8〜1 1 )。再者,本發明者們亦開發全脂環 式之低分子化合物(參考專利文獻1 2 )。此等中所記載之 〇 化合物群因是全脂環式化合物而具有高透明性,可以任意 之光源進行微影。尙且,以具有金剛烷骨架在熱安定性上 表現優異之材料,係可組合耐熱性之製程。但是,在特定 的化合物(參考專利文獻1 2之化合物編號G R - 5 )中,係 有必須使用對顯像液之溶解性高、會導致膜削減之已稀釋 的顯像液之課題。 另一方面’在既存的聚合物系光阻之微影技術上,係 提案有各種低分子化合物作爲溶解抑制劑(參考專利文獻 〇 1 3〜1 5 )。但是’此等之化合物因分子量過小而耐熱性低 ,在古今受高溫化之半導體製造製程中可說是不受採用之 材料.。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開平4-39665號公報 〔專利文獻2〕美國專利第6,〇93,517號說明書 〔專利文獻3〕特開2004-191913號公報 〔專利文獻4〕特開2005-075767號公報 201040136 〔專利文獻5〕特開2007-197389號公報 〔專利文獻6〕專利第4 0 7 6 7 8 9號 〔專利文獻7〕特開2008-089709號公報 〔專利文獻8〕特開2007-191468號公報 〔專利文獻9〕特開2007-193328號公報 〔專利文獻10〕特開2007-210996號公報 〔專利文獻1 1〕特開2 0 0 7 - 3 1 6 5 0 8號公報 〔專利文獻12〕國際公開W02007/094784號 〔專利文獻1 3〕特開2 0 0 1 - 1 8 3 8 3 9號公報 〔專利文獻I 4〕特開2 0 0 5 - 0 5 5 8 6 4號公報 〔專利文獻15〕特開2008- 1 1 6720號公報 【發明內容】 〔發明所欲解決之課題〕 本發明的目的在於提供一種如上述之狀況下,在作爲 半導體裝置製造中所用之正型光阻用單體或是溶解抑制劑 等有用的,於溶解特性、曝光感度、解像度、粗糙度、耐 熱性等方面優異,特別是對顯像液之溶解抑制效果優異的 脂環式化合物、該化合物的製造方法、含有該化合物的組 成物及使用其之光阻圖型的形成方法。 〔解決課題之方法〕 本發明者們,爲了達成前述目的而一再專致於硏究之 結果發現,以使用在金剛烷骨架上有含膽酸類酯構造之基 -8 - 201040136 鍵結的脂環式化合物係得以解決上述課題,因而完成本發 明。 意即,本發明係提供下述發明: 1.—種下述以一般式(丨)所示之脂環式化合物, 〔化1〕 R*2201040136 VI. Description of the Invention: [Technical Field] The present invention relates to an alicyclic compound, a method for producing the compound, a composition containing the compound, and a method for forming a photoresist pattern using the same, and more specifically This is an alicyclic compound having a positive photoresist function, which means that it is usually a solution which has a dissolution inhibitory effect on an alkali solution, but which is decomposed by an acid generated by a photoacid generator to become an alkali-soluble fat. A cyclic compound, a method for producing the compound, a composition containing the compound, and a method for forming a photoresist pattern using the same. [Prior Art] In recent years, as the miniaturization of semiconductor elements progresses, in the photolithography step in the manufacture thereof, it is required to be more refined, and various uses correspond to KrF, ArF or F2 excimers. A method of forming a fine pattern by a short-wavelength light-shielding material such as laser light is reviewed. Further, the appearance of a new photoresist material which can correspond to short-wavelength illumination light such as excimer laser light is more desirable. In terms of photoresist materials, although a large number of polymers based on phenol resins have been developed in the past, these materials have a large absorption of light due to the inclusion of aromatic rings, and they have not been obtained. The accuracy of the pattern is determined in accordance with the miniaturization. Further, in the case of the compound having a dissolution-inhibiting effect, a phenol-based compound typified by diazonaphthoquinone (DNQ) may be used. However, similarly to the above-mentioned polymer, light is generated by irradiation light of a short wavelength. Absorption, so -5 - 201040136 has a limit on the formation of fine patterns. Therefore, in terms of photosensitive photoresist in semiconductor fabrication by ArF excimer laser, it is proposed to have an alicyclic skeleton such as 2-methyl-2-adamantyl methacrylate. A polymer obtained by copolymerizing a polymerizable compound (for example, refer to Patent Document 1). However, with the further development of microfabrication technology, at this stage, if only the line width of 32 nm or less is desired with the prior art, the exposure sensitivity, resolution, pattern shape, exposure depth, surface roughness, etc. cannot be solved. All kinds of requirements require performance. Specifically, the problem of smoothness such as the roughness (roughness) or the ridge of the surface of the pattern called LER and LWR has become more prominent. Further, in recent years, in the method of liquid immersion exposure, it is also common to cause image defects due to 光 = defects such as a photoresist pattern caused by a liquid immersion medium. Further, in the semiconductor manufacturing process using the extreme ultraviolet (EUV) of 13.5 nm, in order to increase the throughput, it is more desirable to develop a high-sensitivity photoresist. Due to the driving force of the prior art, although the required performance can be improved, it is difficult to achieve the "exposure sensitivity, resolution, and surface roughness" under the trade-off relationship at the same time. Among them, a monomolecular compound called a low molecular resist is different from a conventional polymer compound in that it is expected to be a material which is greatly reduced in surface roughness from its molecular size, not only in terms of exposure sensitivity and resolution. In the case of the low molecular resistance, for example, in the patent documents 2 to 7, a polyphenol-based low molecular compound such as caHxarene or calixresorcinarene has been developed as a semiconductor manufacturing material for lithography-6- 201040136 material. Although these are easy to synthesize, they absorb light due to an aromatic ring and a short-wavelength light source of KrF or ArF, and cannot be used. Generally, the wavelength that can be used for exposure is limited to the g-line or i-line of a high-pressure mercury lamp, or a soft X-ray. Therefore, there are several alicyclic low molecular compounds which are applicable to the most advanced mass production exposure technique ArF excimer lasers (refer to Patent Documents 8 to 1 1). Furthermore, the present inventors have also developed a low-molecular compound of a full-aliphatic ring type (refer to Patent Document 12). The ruthenium compound group described in these is highly transparent due to a full-alicyclic compound, and can be lithographically formed by any light source. Further, a material excellent in thermal stability with an adamantane skeleton can be combined with a heat resistance process. However, in the case of a specific compound (refer to the compound number G R - 5 of Patent Document 12), it is necessary to use a dilute developing solution which has high solubility in a developing liquid and which causes a film to be reduced. On the other hand, various oligo-molecular compounds have been proposed as dissolution inhibitors in the lithography technique of the existing polymer-based photoresist (refer to Patent Documents 〇 13 to 15). However, such compounds have low heat resistance due to their low molecular weight, and are not considered to be used in semiconductor manufacturing processes that have been subjected to high temperature in ancient and modern times. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei-4-39665 (Patent Document 2) U.S. Patent No. 6, pp. 93,517 (Patent Document 3) JP-A-2004-191913 (Patent Literature) (4) Patent No. 2007-197389 (Patent Document 5) JP-A-2007-197389 (Patent Document 6) Patent No. 4 0 7 6 7 8 9 [Patent Document 7] JP-A-2008-089709 Japanese Laid-Open Patent Publication No. 2007-193328 (Patent Document 10) JP-A-2007-210996 (Patent Document 1) Opens 2 0 0 7 - 3 1 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei 2 0 0 5 - 1 8 3 8 3 9 (Patent Document I 4) Special Opening 2 0 0 5 [Patent Document 15] [Patent Document 15] JP-A-2008- 1 1 6720 SUMMARY OF INVENTION [Problem to be Solved by the Invention] An object of the present invention is to provide a situation as described above. A positive photoresist or a dissolution inhibitor used in the manufacture of a semiconductor device It is excellent in solubility characteristics, exposure sensitivity, resolution, roughness, heat resistance, and the like, and particularly an alicyclic compound excellent in dissolution inhibitory effect on a developing solution, a method for producing the compound, and a composition containing the compound. And a method of forming a photoresist pattern using the same. [Means for Solving the Problem] The present inventors have found that in order to achieve the above-mentioned object, it has been found that an alicyclic ring having a structure of a bile acid ester-containing group - 8 - 201040136 bonded to an adamantane skeleton is used. The compound of the formula solves the above problems, and thus the present invention has been completed. That is, the present invention provides the following inventions: 1. An alicyclic compound represented by the following formula (丨), [Chemical Formula 1] R*2

(式中’ Ral〜係各自獨立地爲下述以一般式(& )所 示之含膽酸類酯構造之基) 〔化2〕(wherein Ral~ are each independently a group containing a cholic acid ester structure represented by the following general formula (&)) [Chemical 2]

(式中’Rb表示羥基或下述以—般式(Μ)〜(b5)之任 Ο 一所不的碳數2〜30之含氧有機基;11°及Rd係各自獨立 地表示氫原子、羥基或下述以—般式〜(b5)之任 一所不的碳數2〜30之含氧有機基;^及Rf係各自獨立 地表示氫原子、或是可具有雜原子之碳數1〜1〇的直鏈狀 、分支狀或環狀之烴基;η表示1或2;a表示單鍵或碳 數1〜5之—價的烴基;惟,Rb、RC及Rd係無3個同時爲 羥基的情況) 〔化3〕 ζι 义〇A (b1) -9 - 201040136 C式中,Z1表示可具有雜原子之碳數1〜ι5的直鏈狀、分 支狀或環狀之烴基) 〔化4 z^°Y°v (b2) Ο (式中,Ζ2表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基) 〔化5〕 Ζ3(In the formula, Rb represents a hydroxyl group or an oxygen-containing organic group having a carbon number of 2 to 30 as defined in the general formula (Μ)~(b5); 11° and Rd each independently represent a hydrogen atom; And a hydroxyl group or an oxygen-containing organic group having a carbon number of 2 to 30 as defined in any one of the following formulas (b5); and Rf each independently represents a hydrogen atom or a carbon number which may have a hetero atom a linear, branched or cyclic hydrocarbon group of 1 to 1 ;; η represents 1 or 2; a represents a single bond or a hydrocarbon group having a carbon number of 1 to 5; however, there are no 3 Rb, RC and Rd systems. In the case of a hydroxyl group at the same time) [Chemical 3] ζι 〇 A (b1) -9 - 201040136 In the formula C, Z1 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to ι 5 of a hetero atom) [Chemical 4 z^°Y°v (b2) Ο (wherein Ζ2 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 of a hetero atom) [Chemical 5] Ζ3

(b 3) (式中,Z3表示可具有雜原子之碳數1〜9的直鏈狀、分 支狀或環狀之烴基;Rg及Rh係各自獨立地表示氫原子或 是可具有雜原子之碳數1〜10的直鏈狀、分支狀或環狀之 烴基)(b 3) (wherein Z3 represents a linear, branched or cyclic hydrocarbon group which may have a carbon number of 1 to 9 of a hetero atom; and Rg and Rh each independently represent a hydrogen atom or may have a hetero atom a linear, branched or cyclic hydrocarbon group having 1 to 10 carbon atoms)

(b 4) (式中,Z4表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基) 〔化7〕 Z5—(b 4) (wherein Z4 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 which may have a hetero atom) [Chemical 7] Z5-

(b 5) (式中,Z5〜Z7係各自獨立地表示可具有雜原子之碳數1 〜10的直鏈狀、分支狀或環狀之烴基); 2-如上述1之脂環式化合物’其中’前述一般式(a)中 -10- 201040136 之Re及。爲氫原子,且八爲單鍵; 3. 如上述1或2之脂環式化合物’其中’前述一般式(a )中之η爲1,而Re及。各自獨立地爲氫原子或經基; 4. 如上述1〜3中任一項之脂環式化合物’其中’前述一 般式(a)中之Rb係前述以一般式(bl)所示之含氧有機 基,而Re及Rd爲羥基; 5. 如上述1〜3中任一項之脂環式化合物,其中,前述一 般式(a)中之Rb爲羥基; 6. 一種上述1、2、3或5之脂環式化合物的製造方法, 其特徵係’使下述以一般式(cl)〜(C4)之任一所示的 膽酸類與自1,3,5-參(乙烯氧基)金剛烷、丨,3,5_參(鹵 代甲氧基)金剛烷、1,3,5 -參(乙烯氧基甲基)金剛烷及 1,3,5 -參(甲基硫代甲氧基)金剛烷所選出之1種以上反 應;(b 5) (wherein, Z5 to Z7 each independently represent a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 10 which is a hetero atom); 2- an alicyclic compound as described above 'Where' in the above general formula (a) -10- 201040136 Re and. It is a hydrogen atom, and VIII is a single bond; 3. The alicyclic compound as in the above 1 or 2 wherein η in the above general formula (a) is 1, and Re is. The alicyclic compound of any one of the above 1 to 3, wherein Rb of the above general formula (a) is as defined by the general formula (bl) The alicyclic compound according to any one of the above 1 to 3, wherein Rb in the above general formula (a) is a hydroxyl group; A method for producing an alicyclic compound of 3 or 5, which is characterized in that 'the following bile acids are represented by any one of the general formulae (cl) to (C4) and from 1,3,5-paran (ethyleneoxy) Adamantane, anthracene, 3,5-g (halomethoxy) adamantane, 1,3,5-gin (vinyloxymethyl)adamantane and 1,3,5-paran (methylthio One or more reactions selected from methoxy) adamantane;

-11 - 201040136-11 - 201040136

(c4) 7. 一種上述1〜6中任一項之脂環式化合物的製造方法’ 其特徵係’使下述以一般式(1 - 1 )所示之脂環式化合物 與下述以一般式(dl)〜(d5)之任一所示之含氧有機化 合物的1種以上反應, 〔化9〕(c4) 7. The method for producing an alicyclic compound according to any one of the above 1 to 6 which is characterized by the following alicyclic compound represented by the general formula (1 - 1) and the following One or more kinds of reactions of the oxygen-containing organic compound represented by any one of the formulas (d1) to (d5), [Chem. 9]

(1-1) (式中,Ra4〜Ra6各自獨立地爲下述以一般式( 之含膽酸類酯構造之基) 〔化 1 〇〕(1-1) (In the formula, Ra4 to Ra6 are each independently a general formula (the group containing a cholic acid ester structure) [Chemical 1 〇]

(式中,Rh及各自獨立地爲氫原子或羥基) 〔化"〕 (d1)(wherein Rh and each independently are a hydrogen atom or a hydroxyl group) [Chemical "] (d1)

z1 乂 X (式中,Z1表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基;X表示鹵素原子) 〔化 1 2〕 汝〇丫〇Y〇'z2 (d2) ο ο -12- 201040136 狀、分 (式中,Z2表示可具有雜原子之碳數〗〜15的直鍵 支狀或環狀之烴基) 〔化 1 3〕Z1 乂X (wherein Z1 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 of a hetero atom; X represents a halogen atom) [Chemical 1 2] 汝〇丫〇Y〇'z2 (d2) ο ο -12- 201040136 状,分分(wherein, Z2 represents a straight-bonded or cyclic hydrocarbon group which may have a carbon number of a hetero atom of ~15) [Chemical Formula 1]

(d3) 狀、分 子或是 狀之烴 (式中,Z3表示可具有雜原子之碳數1〜9的直鍵 支狀或環狀之烴基;Rg及Rh各自獨立地表示氫原 0 可具有雜原子之碳數1〜10的直鏈狀、分支狀或環 基;X表不鹵素原子) 〔化 1 4〕 广0 丫、 (d4) 0 狀、分 (式中,Z4表示可具有雜原子之碳數1〜15的直鏈 支狀或環狀之烴基;X表示鹵素原子) 〔化 1 5〕 Z*(d3) a hydrocarbon having a shape, a molecule or a shape (wherein Z3 represents a straight-bonded or cyclic hydrocarbon group which may have a carbon number of 1 to 9 of a hetero atom; and Rg and Rh each independently represent a hydrogenogen 0 may have a linear, branched or cyclic group having a carbon number of 1 to 10 in a hetero atom; X is a halogen atom; (1) a broad 0 丫, (d4) 0 shape, and a fraction (wherein Z4 represents a miscellaneous a linear branched or cyclic hydrocarbon group having 1 to 15 carbon atoms; X represents a halogen atom) [Chemical 1 5] Z*

Zs-Si—X (d5) z7 數 1〜 子); 前述一 所示之 (式中,Z5〜Z7各自獨立地表示可具有雜原子之碳 1〇的直鏈狀、分支狀或環狀之烴基;x表示鹵素原 8.如上述7之脂環式化合物的製造方法’其中’ 般式(1 -1 )中之Ra4〜Ra6係下述以一般式(a·2 ) 含膽酸類酯構造之基; -13- 201040136 〔化 1 6〕Zs-Si—X (d5) z7 number 1 to sub); as shown in the above (wherein, Z5 to Z7 each independently represent a linear, branched or cyclic group of carbon which may have a hetero atom; a hydrocarbon group; x represents a halogen precursor. 8. A method for producing an alicyclic compound according to the above 7, wherein Ra4 to Ra6 in the general formula (1 -1) is a structure containing a cholic acid ester of the following general formula (a.2). Base; -13- 201040136 〔化1 6〕

9. 一種組成物,其特徵係含有上述1〜5中任一項之脂環 式化合物; 1 〇 ·如上述9之組成物,其係進一步含有溶媒及酸產生劑 t 11.如上述9或1 0之組成物,其係進一步含有消化體( quencher) ; 1 2 _如上述9〜1 1中任一項之組成物,其係正型光阻組成 物;以及, 13. —種光阻圖型之形成方法,其係含有:使用上述9〜 1 2中任一項之組成物作爲正型光阻而於支持體上形成光阻 膜之步驟、使該光阻膜進行曝光之步驟、使該光阻膜進行 鹼顯像而形成光阻圖型之步驟。 〔發明之效果〕 本發明之脂環式化合物係在溶解特性 '曝光感度、解 像度、粗糙度、耐熱性等方面表現優異,特別是對顯像液 之溶解抑制效果上表現優異。 【實施方式】 〔用以實施發明之形態〕 -14- 201040136 本發明係提供一種下述以一般式(1)所示之脂環式 化合物。 〔化 1 7〕9. A composition comprising the alicyclic compound of any one of the above 1 to 5; 1 〇. The composition of the above 9, further comprising a solvent and an acid generator t 11. as described above 9 or a composition of 10, further comprising a digestor; 1 2 _ a composition according to any one of the above 9 to 1 1 which is a positive photoresist composition; and, 13. A method for forming a pattern, comprising: a step of forming a photoresist film on a support by using the composition of any one of the above 9 to 12 as a positive photoresist; and exposing the photoresist film, The photoresist film is subjected to alkali development to form a photoresist pattern. [Effects of the Invention] The alicyclic compound of the present invention is excellent in solubility characteristics, exposure sensitivity, resolution, roughness, heat resistance, and the like, and is particularly excellent in the effect of suppressing dissolution of a developing solution. [Embodiment] [Formation for carrying out the invention] -14- 201040136 The present invention provides an alicyclic compound represented by the following formula (1). 〔化1 7〕

(式中,Ral〜Ra3係各自獨立地爲下述以一般式(a )所 示之含膽酸類酯構造之基。) 上述一般式(1)中之Ral〜Ra3雖可互爲相同或相異 ,但以Ra 1〜Ra3全爲相同的含膽酸類酯構造之基者爲佳。 〔化 1 8〕(In the formula, Ral to Ra3 are each independently a group having a cholic acid ester structure represented by the following general formula (a).) Ral to Ra3 in the above general formula (1) may be the same or each other. It is preferable that the base containing the cholic acid ester is all the same as Ra 1 to Ra 3 . 〔化1 8〕

上述一般式(a)中之Rb表示羥基或下述以一般式( Q bl)〜(b5)之任一所示之碳數2〜30之含氧有機基,更 佳爲羥基或下述以一般式(bl)所示之碳數2〜15之含氧 有機基。 上述一般式(a)中之1^及Rd係各自獨立地表示氫 原子、羥基或下述以一般式(bl)〜(b5)之任一所示的 碳數2〜30之含氧有機基,較佳爲氫原子、羥基或下述以 一般式(bl)〜(b5)之任—所示之碳數2〜15之含氧有 機基,更佳爲氫原子或羥基。 上述一般式(a)中之Re及Rf係各自獨立地表示氫原 子、或是可具有雜原子之碳數1〜1〇的直鏈狀、分支狀或 -15- 201040136 環狀之烴基’較佳爲氫原子、或是可具有雜原子之碳數1 〜6的直鏈狀、分支狀或環狀之烴基,更佳爲氫原子。 上述一般式(a)中之η表示1或2,較佳爲1。 上述一般式(a)中之Α表示單鍵或碳數丨〜5之二價 烴基,較佳爲單鍵。 惟’上述一般式(a )中’ Rb、R。及Rd係無3個同時 爲羥基的情況。 上述一般式(a)中,Re及1^所示之可具有雜原子之 碳數1〜1 〇的直鏈狀、分支狀或環狀之烴基的具體例方面 ,可舉出甲基、乙基、η-丙基、η-丁基、n_戊基、n_己基 、η-庚基等之直鏈狀烴基、異丙基、sec-丁基、tert-丁基 、異戊基、新戊基等之分支狀烴基、環戊基、環己基、金 剛烷基等之環狀烴基。Re及Rf所具有之雜原子的具體例 方面,可舉出氮原子、氧原子、硫原子等。 上述一般式(a)中,以A所示之碳數1〜5之二價烴 基的具體例方面,可舉出伸甲基、伸乙基、伸丙基、伸丁 基及伸戊基。 〔化 1 9〕 ζΛΛ (b1) 上述一般式(bl)中之Z1表示可具有雜原子之碳數1 〜15的直鏈狀、分支狀或環狀之煙基,較佳爲碳數1〜5 的直鏈狀、分支狀或環狀之烴基。 -16- 201040136 〔化 20〕Rb in the above general formula (a) represents a hydroxyl group or an oxygen-containing organic group having 2 to 30 carbon atoms represented by any one of the general formulas (Q bl) to (b5), more preferably a hydroxyl group or the following An oxygen-containing organic group having a carbon number of 2 to 15 represented by the general formula (bl). In the above general formula (a), 1 and R each independently represent a hydrogen atom, a hydroxyl group or an oxygen-containing organic group having a carbon number of 2 to 30 represented by any one of the general formulae (b1) to (b5). Preferably, it is a hydrogen atom, a hydroxyl group or an oxygen-containing organic group having a carbon number of 2 to 15 represented by the general formula (b1) to (b5), and more preferably a hydrogen atom or a hydroxyl group. Re and Rf in the above general formula (a) each independently represent a hydrogen atom or a linear, branched or -15-201040136 cyclic hydrocarbon group having a carbon number of 1 to 1 杂 having a hetero atom. It is preferably a hydrogen atom or a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 6 which is a hetero atom, and more preferably a hydrogen atom. η in the above general formula (a) represents 1 or 2, preferably 1. The above formula (a) represents a single bond or a divalent hydrocarbon group having a carbon number of 丨5, preferably a single bond. However, in the above general formula (a), 'Rb, R. And there are no three cases in which the Rd system is a hydroxyl group at the same time. In the above general formula (a), specific examples of the linear, branched or cyclic hydrocarbon group which may have a carbon number of 1 to 1 杂 of a hetero atom represented by Re and 1 are a methyl group and a a linear hydrocarbon group such as a η-propyl group, an η-butyl group, an n-pentyl group, an n-hexyl group or an η-heptyl group, an isopropyl group, a sec-butyl group, a tert-butyl group, an isopentyl group, A cyclic hydrocarbon group such as a branched hydrocarbon group such as a neopentyl group, a cyclopentyl group, a cyclohexyl group or an adamantyl group. Specific examples of the hetero atom of Re and Rf include a nitrogen atom, an oxygen atom, and a sulfur atom. In the above general formula (a), specific examples of the divalent hydrocarbon group having 1 to 5 carbon atoms represented by A include a methyl group, an ethyl group, a propyl group, a butyl group and a pentyl group. [Chemical Formula 1] ζΛΛ (b1) Z1 in the above general formula (b1) represents a linear, branched or cyclic ketone group having a carbon number of 1 to 15 which may have a hetero atom, preferably a carbon number of 1~ a linear, branched or cyclic hydrocarbon group of 5. -16- 201040136 〔化20〕

(b2) 上述一般式(μ)中之z2表示可具有雜原子之碳數1 〜15的直鏈狀、分支狀或環狀之烴基,較佳爲碳數1〜8 的直鏈狀、分支狀或環狀之烴基。 〔化 2 1〕(b2) The z2 in the above general formula (μ) represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 which is a hetero atom, preferably a linear or branched carbon number of 1 to 8. Hydrocarbon group or cyclic. 〔化 2 1〕

〇早ο、〆 (b3) 上述一般式(b3)中之Z3表示可具有雜原子之碳數i 〜9的直鏈狀、分支狀或環狀之烴基,較佳爲碳數1〜4的 直鏈狀、分支狀或環狀之烴基。 上述一般式(b3)中之Rg及Rh係各自獨立地表示氫 原子或是可具有雜原子之碳數1〜10的直鏈狀、分支狀或 環狀之煙基,較佳爲氫原子或是碳數1〜5的直鏈狀、分 支狀或環狀之烴基。 〇 〔化 22〕 z4/Oyv〇A (b4) 上述一般式(b4)中之Z4表示可具有雜原子之碳數1 〜1 5的直鏈狀、分支狀或環狀之烴基,較佳爲碳數1〜8 的直鏈狀、分支狀或環狀之烴基。 〔化 23〕 ze Z*—SiO Ί ( b 5 ) -17- 201040136 上述一般式(b5)中之Z5〜Z7各自獨立地表示可具 有雜原子之碳數1〜10的直鏈狀、分支狀或環狀之烴基’ 較佳爲碳數1〜5的直鏈狀、分支狀或環狀之烴基。 上述一般式(bl)中Z1所示之可具有雜原子之碳數1 〜的直鏈狀、分支狀或環狀之烴基 '上述一般式(b2) 中Z2所示之可具有雜原子之碳數丨〜15的直鏈狀、分支 狀或環狀之烴基 '上述一般式(b3)中Z3所示之可具有 雜原子之碳數1〜9的直鏈狀、分支狀或環狀之烴基、上 述一般式(b3)中RS及Rh所示之可具有雜原子之碳數1 〜1〇的直鏈狀、分支狀或環狀之烴基、上述一般式(b4) 中Z4所示之可具有雜原子之碳數1〜15的直鏈狀、分支 狀或環狀之烴基' 及上述一般式(b5 )中Z5〜Z7所示之 可具有雜原子之碳數1〜1 0的直鏈狀、分支狀或環狀之烴 基的具體例方面,可舉出甲基、乙基、η -丙基、η -丁基、 η-戊基、η-己基、η-庚基等之直鏈狀烴基、異丙基、sec_ 丁基、tert-丁基、異戊基、新戊基等之分支狀烴基、環戊 基、環己基、金剛烷基等之環狀烴基。Z1〜Z7所具有之雜 原子的具體例方面'可舉出氮原子、氧原子、硫原子等。 本發明之含脂環構造之化合物係可藉由種種的方法來 製造’具代表性的例子方面,係可舉出以下之製造方法A 〜D ’但非僅限於此等。 製造方法A : 藉由使含金剛烷構造之醇在醛類之存在下,以鹵化氫 氣體使其反應而得鹵化烷基醚體後,進行此鹵化烷基醚體 -18· 201040136 與膽酸類之酯化反應的方法。 製造方法B : 使含金剛烷構造之醇在烷基亞颯及酸酐的存在下得烷 基硫代烷基醚體,藉由鹵化劑來成爲鹵化烷基醚體,進一 步進行此鹵化烷基醚體與膽酸類之酯化反應的方法。 製造方法C : 在酸觸媒存在下,進行含金剛烷構造之乙烯基醚與膽 〇 酸類之酯化反應的方法。 製造方法D : 使用含氧有機化合物,進行前述製造方法A〜C所得 脂環式化合物之羥基保護反應的方法。 (製造方法A ) 上述製造方法A中之含金剛烷構造之醇方面,可舉例 如1,3,5-金剛烷三醇、1,3,5-參(羥基甲基)金剛烷等。 Ο 製造方法A中之醛類方面,可舉例如甲醛,三聚甲醛 ’乙醛、丙醛、丁醛、異丁醛等之直鏈狀或分支狀的脂肪 族醛,且可使用1種或2種以上。 製造方法A中之鹵化氫氣體方面,可舉例如氟化氫氣 體、氯化氫氣體、溴化氫氣體之類的單體氣體或此等之混 合氣體。 製造方法A中之膽酸類方面,可舉例如下述以式(c〇 )所示之膽酸 '下述以式(Cl)所示之石膽酸( lithocholic acid ) '下述以式(c2)所示之去氧膽酸( -19- 201040136 deoxycholic acid)、下述以式(C3)所示之熊去氧膽酸( Ursodeoxycholic acid)、下述以式(C4)所示之鵝去氧膽 酸(Chenodeoxycholic acid )等之飽和膽酸衍生物,且可 使用1種或2種以上。 惟,膽酸類方面’若使用下述以式(c 0 )所示之膽酸 時,因無法得到滿足上述一般式(a)之本發明之脂環式 化合物,而必須進一步進行後述之製造方法D。 〔化 24〕〇早, 〆 (b3) Z3 in the above general formula (b3) represents a linear, branched or cyclic hydrocarbon group which may have a carbon number i to 9 of a hetero atom, preferably a carbon number of 1 to 4. a linear, branched or cyclic hydrocarbon group. Rg and Rh in the above general formula (b3) each independently represent a hydrogen atom or a linear, branched or cyclic ketone group having a carbon number of 1 to 10 which may have a hetero atom, preferably a hydrogen atom or It is a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms. 4 [Chemical Formula 22] z4/Oyv〇A (b4) Z4 in the above general formula (b4) represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 which may have a hetero atom, preferably A linear, branched or cyclic hydrocarbon group having 1 to 8 carbon atoms. ZE Z*—SiO Ί ( b 5 ) -17- 201040136 Z5 to Z7 in the above general formula (b5) each independently represent a linear or branched shape having a carbon number of 1 to 10 which may have a hetero atom. The cyclic hydrocarbon group ' is preferably a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms. a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 1 represented by Z1 in the above general formula (bl), which may have a hetero atom as shown by Z2 in the above general formula (b2) a linear, branched or cyclic hydrocarbon group having a number of 丨-15, which is a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 9 which may have a hetero atom as represented by Z3 in the above general formula (b3). The linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 1 杂 of a hetero atom represented by RS and Rh in the above general formula (b3), and Z4 shown in the above general formula (b4) a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 of a hetero atom and a linear chain having a carbon number of 1 to 10 which may have a hetero atom as shown by Z5 to Z7 in the above general formula (b5) Specific examples of the hydrocarbon group in the form of a branched, branched or cyclic ring include a linear chain of a methyl group, an ethyl group, an η-propyl group, an η-butyl group, an η-pentyl group, an η-hexyl group, and an η-heptyl group. a cyclic hydrocarbon group such as a branched hydrocarbon group such as a hydrocarbon group, an isopropyl group, an sec-butyl group, a tert-butyl group, an isopentyl group or a neopentyl group; a cyclic hydrocarbon group such as a cyclopentyl group, a cyclohexyl group or an adamantyl group; Specific examples of the hetero atom of Z1 to Z7 include a nitrogen atom, an oxygen atom, a sulfur atom and the like. The alicyclic structure-containing compound of the present invention can be produced by various methods. Representative examples are the following production methods A to D', but are not limited thereto. Production Method A: After the halogenated alkyl ether body is obtained by reacting an alcohol containing an adamantane structure in the presence of an aldehyde with a hydrogen halide gas, the halogenated alkyl ether body-18·201040136 and the cholic acid are carried out. The method of esterification reaction. Production method B: an alkylthioalkyl ether body obtained by using an adamantane-structured alcohol in the presence of an alkylarylene and an acid anhydride, and a halogenated alkyl ether body by a halogenating agent, further performing the halogenated alkyl ether A method of esterification of a body with a bile acid. Production Method C: A method of performing an esterification reaction of a vinyl ether having an adamantane structure with a cholesteric acid in the presence of an acid catalyst. Production Method D: A method of performing a hydroxy protecting reaction of the alicyclic compound obtained by the above Production Methods A to C using an oxygen-containing organic compound. (Production Method A) The alcohol containing the adamantane structure in the above Production Method A may, for example, be 1,3,5-adamantane triol or 1,3,5-parax (hydroxymethyl)adamantane.方面 The aldehyde in the production method A may, for example, be a linear or branched aliphatic aldehyde such as formaldehyde, trioxane, acetaldehyde, propionaldehyde, butyraldehyde or isobutyraldehyde, and one type or 2 or more types. The hydrogen halide gas in the production method A may, for example, be a hydrogen fluoride gas, a hydrogen chloride gas or a monomer gas such as hydrogen bromide gas or a mixed gas thereof. The bile acid in the production method A may, for example, be a cholic acid represented by the following formula (c): lithocholic acid represented by the following formula (Cl), and the following formula (c2) Deoxycholic acid (-19-201040136 deoxycholic acid), ursodeoxycholic acid represented by formula (C3), and gooseoxycholic acid represented by formula (C4) below A saturated bile acid derivative such as an acid (Chenodeoxycholic acid) may be used alone or in combination of two or more. However, in the case of the bile acid, when the following bile acid represented by the formula (c 0 ) is used, the alicyclic compound of the present invention which satisfies the above general formula (a) cannot be obtained, and the production method described later must be further carried out. D. 〔化 24〕

製造方法A中之鹵化烷基醚體係可藉由使含金剛烷構 造之醇在醒類的存在下’以鹵化氫氣體使其反應而得。此 時,雖可於有機溶媒之存在或不存在下予以進行,但在使 -20- 201040136 用有機溶媒的情況時’若爲含金剛烷構造之醇的飽和溶解 度以下則不特別限定,係以調節基質濃度至01莫耳/升 〜10莫耳/升爲佳。基質濃度若爲〇.〗莫耳/升以上,因 在一般的反應器即可獲得必須的量,故在經濟性上較佳, 而右基質濃度爲1 〇莫耳/升以下’則反應液的溫度控制 容易而較佳。 可使用之有機溶媒方面,可舉出己烷、庚烷、環己烷 、乙基環己烷、苯、甲苯、二甲苯等之烴系溶媒;二乙基 醚、二丁基醚、四氫呋喃(THF)、二噁烷、二甲氧基乙 烷(DME )等之醚系溶媒;二氯甲烷、四氯化碳等之鹵素 系溶媒’其中以鹵化氫氣體之溶存量高的鹵素系溶媒爲佳 ,且此等係可使用1種或混合2種以上使用之。 又,反應溫度雖可採用任意溫度,但若溫度過高,則 鹵化氫氣體之溶解度會降低,若溫度過低,則反應本身的 進行會變慢,因此,以〇°C〜4〇°C爲佳。 壓力雖可採用任意壓力,但因在加壓條件下亦必須控 制副反應之故,而以常壓爲佳。又,壓力過高時,必須要 有特別的耐壓裝置,在經濟性上不佳。 如此所得之鹵化烷基醚體的具體例方面’可舉出 1 3,5 -參(鹵代甲氧基)金剛院等。 製造方法A中之酯化反應係可藉由使_化院基醚體與 膽酸類反應來進行。又,雖可於有機溶媒之存在或不存在 下予以進行,但在使用有機溶媒的情況時’係以調節基質 濃度至〇·ι莫耳/升〜10莫耳/升爲佳。基質濃度若爲 -21 - 201040136 0.1莫耳/升以上,因在一般的反應器即可 ,故在經濟性上較佳,而若基質濃度爲10 ,則反應液的溫度控制容易而較佳。可使用 面’可舉出己烷、庚烷、環己烷、乙基環己 、二甲苯等之烴系溶媒;二乙基醚、二丁基 (THF )、二噁烷、二甲氧基乙烷(DME ) 媒;二氯甲烷、四氯化碳等之鹵素系溶媒; 甲基甲醯胺)、二甲基亞颯(DMSO ) 、N- 酮(NMP)、六甲基磷酸三醯胺(HMPA) 酸三醯胺(HMPT )、二硫化碳等之非質子 此等係可使用1種或混合2種以上使用之。 ,係可使用氫化鈉、氫氧化鈉、氫氧化鋰、 鋰 '碳酸氫鈉、碳酸氬鋰、氧化銀、燐酸鈉 酸一氫二鈉、燐酸一氫二鋰、燐酸二氫一鈉 鋰、鈉甲氧化物、鋰t - 丁氧化物、三乙基胺 三辛基胺、吡啶、N , N -二甲基胺基吡啶、1 〔4,3,0〕壬-5-烯(DBN) 、:l·, 8 -二氮雜雙環 碳-7-烯(DBU)等之無機鹼基及有機胺。 上述酯化反應後,反應生成液係分離成 可視需要而自水層萃取出生成物。自反應液 餾去溶媒,而可得本發明之脂環式化合物。 化,亦可不予純化下將反應液供給下一反1 面,係可由蒸餾、萃出洗淨、晶析、再沈1 、二氧化矽膠體管柱層析等一般的純化方沒 獲得必須的量 莫耳/升以下 的有機溶媒方 烷、苯、甲苯 醚、四氫呋喃 ’等之醚系溶 DMF ( n,N-二 甲基-2-吡略垸 、六甲基亞磷 極性溶媒,且 上述鹼基方面 碳酸鈉、碳酸 、燐酸鋰、燐 、燐酸二氫一 …三丁基胺、 ,5 -二氮雜雙環 〔5,4,0 〕十一 水與有機層, 中藉由減壓來 可視需要而純 。純化方法方 、活性碳吸附 之中,考慮製 -22- 201040136 造規模、必要的純度來予以選擇,但因可於較低溫下操作 ,且可一次處理多量的樣品之故’係以卒出洗淨、晶析或 再沈澱之方法爲佳。特別是將使用之原料從本發明之脂環 式化合物去除之方法方面,雖可採用種種方法,但由操作 性或經濟性的觀點來看,係以使用對脂環式化合物而言之 貧溶媒來洗淨原料之方法爲佳。對脂環式化合物而言之貧 溶媒中,更以沸點低者爲佳,具代表性的可舉出二乙基醚 0 、甲醇、乙醇、η-己烷、η-庚烷等。 (製造方法Β ) 上述製造方法Β中之含金剛烷構造之醇及膽酸類方面 ,係可使用與前述製造方法Α同樣者。 製造方法B中之烷基亞颯方面,可舉例如二甲基亞颯 、二乙基亞颯、二-η-丙基亞颯、二異丙基亞颯、二-η-丁 基亞颯、二異丁基亞颯、二-sec-丁基亞颯、二-ter t-丁基 ❹ 亞碾、二異戊基亞楓、甲基乙基亞颯、甲基-tert-丁基亞 颯等之對稱或非對稱的脂肪族亞颯,雖可使用1種或2種 以上,但因考慮反應生成物之單一性,較佳爲對稱脂肪族 亞颯,且以短鏈長烷基之二甲基亞颯更佳。 製造方法B中之酸酐方面,可舉例如乙酸酐、丙酸酐 、丁酸酐、異丁酸酐、吉草酸酐、三甲基乙酸酐、安息香 酸酐、氯乙酸酐、三氟乙酸酐等之脂肪族或芳香族羧酸酐 ,且可使用1種或2種以上。 製造方法B中之鹵化劑方面,可舉例如氯化硫醯基、 -23- 201040136 氯化磺醯基、溴化硫醯基、溴化磺醯基、氯化溴化硫醯基 、氯化溴化磺醯基等之鹵化硫化合物,或三氯化磷、三溴 化磷、三碘化磷、三氯化磷酸、三溴化磷酸、五氯化磷、 五溴化磷等之鹵化磷化合物,且可使用1種或2種以上。 製造方法B中之院基硫代院基醚體係可藉由使含金剛 烷構造之醇於烷基亞碾及酸酐的存在下反應而得。此時, 雖可於有機溶媒之存在或不存在下予以進行,但通常,係 大量過剩地使用烷基亞颯及酸酐作爲反應試劑及溶媒來進 行反應。特別是在使用有機溶媒的情況時,係以調節基質 濃度至1莫耳/升〜10莫耳/升者爲佳。基質濃度若爲1 莫耳/升以上,因在一般的反應器即可獲得必須的量,故 在經濟性上較佳,而若基質濃度爲1 0莫耳/升以下,則 反應液的溫度控制容易而較佳。可使用的有機溶媒方面, 可舉出己烷、庚烷、環己烷、乙基環己烷、苯、甲苯、二 甲苯等之烴系溶媒;二乙基醚、二丁基醚、THF(四氫呋 喃)、二噁烷、DM E (二甲氧基乙烷)等之醚系溶媒;二 氯甲烷、四氯化碳等之鹵素系溶媒,而此等係可使用1種 或混合2種以上使用之。反應溫度雖可採用任意溫度,但 若溫度過高,則會發生副反應所致之選擇率降低,若溫度 過低,則因反應本身的進行會變慢之故,而以室溫〜6 0 °C 爲佳。壓力雖可採用任意壓力,但因在加壓條件下亦必須 控制副反應之故,而以常壓爲佳。壓力過高時,必須要有 特別的耐壓裝置,在經濟性上不佳。 如此所得之烷基硫代烷基醚體的具體例方面,係可舉 -24- 201040136 出1,3,5-參(甲基硫代甲氧基)金剛烷等。 製造方法B中之鹵化烷基醚體係可藉由使上述烷基硫 代烷基醚體與鹵化劑反應而得。此時,雖可於有機溶媒之 存在或不存在下予以進行,但亦可大量過剩地使用鹵化劑 來作爲反應試劑及溶媒。特別是在使用有機溶媒的情況時 ’係以調節基質濃度至0.1莫耳/升〜10莫耳/升爲佳。 基質濃度若爲0.1莫耳/升以上,因在一般的反應器即可 0 獲得必須的量,故在經濟性上較佳,而若基質濃度爲10 莫耳/升以下,則反應液的溫度控制容易而較佳。可使用 的有機溶媒方面,可舉出己烷、庚烷、環己烷、乙基環己 烷、苯、甲苯、二甲苯等之烴系溶媒;二乙基醚、二丁基 醚、四氫呋喃(THF )、二噁烷、二甲氧基乙烷(DME ) 等之醚系溶媒;二氯甲烷、四氯化碳等之鹵素系溶媒,而 此等係可使用1種或混合2種以上使用之。反應溫度雖可 採用任意溫度,但若溫度過高,則會發生副反應所致之選 〇 擇率降低,若溫度過低,則因反應本身的進行會變慢之故 ,以室溫〜1 0 0 °c爲佳。壓力雖可採用任意壓力,但因在 加壓條件下亦必須控制副反應之故’而以常壓爲佳。壓力 過高時,必須要有特別的耐壓裝置,在經濟性上不佳。 如此所得之鹵化烷基醚體的具體例方面,係可舉出 1,3,5-參(鹵代甲氧基)金剛烷等。 製造方法B中之酯化反應係可與前述製造方法a中之 酯化反應同樣地進行。 -25- 201040136 (製造方法c) 上述製造方法c中之含金剛烷構造之乙烯基醚方面’ 可舉例如1,3,5-參(乙烯氧基)金剛烷、1,3,5-參(乙烯 氧基甲基)金剛院等。 製造方法C中之膽酸類方面,係可使用與上述製造方 法A同樣者。 製造方法C中之酸觸媒方面,雖可舉出以路易士酸、 布忍斯特酸、阿瑞尼斯酸等所定義之任意有機及無機的酸 ’但較佳可舉出甲酸、乙酸、鹽酸、硫酸、硝酸、甲烷磺 酸、對甲苯磺酸、三氟乙酸、三氟甲烷磺酸等之布忍斯特 酸。 上述製造方法C中,係於酸觸媒存在下,使含金剛烷 構造之乙烯基醚與膽酸類反應。此時,雖可於有機溶媒之 存在或不存在下予以進行,但在使用有機溶媒的情況時’ 若爲含金剛烷構造之乙烯基醚的飽和溶解度以下的話,並 無特別限定,但以調節基質濃度至〇. 1莫耳/升〜1 0莫耳 /升爲佳。基質濃度若爲0.1莫耳/升以上,因在一般的 反應器即可獲得必須的量,故在經濟性上較佳,而若基質 濃度爲1 〇莫耳/升以下,則反應液的溫度控制容易而較 佳。 可使用的有機溶媒方面,可舉出己烷、庚烷、環己烷 、乙基環己烷、苯、甲苯、二甲苯等之烴系溶媒;二乙基 醚、二丁基醚、四氫呋喃(THF)、二噁烷、二甲氧基乙 烷(DM E )等之醚系溶媒;二氯甲烷、四氯化碳等之鹵素 -26- 201040136 系溶媒’其中以鹵化氫氣體之溶存量高的鹵素系溶媒爲佳 ,且此等係可使用1種或混合2種以上使用之。 又’反應溫度雖可採用任意溫度,但若溫度過高,則 含金剛烷構造之乙烯基醚彼此會聚合而導致副反應的發生 ’若溫度過低,反應本身的進行會變慢,因此,以〇乞〜 4 0 °C爲佳。 壓力雖可採用任意壓力,但因在加壓條件下亦必須控 0 制副反應之故,而以常壓爲佳。又,壓力過高時,必須要 有特別的耐壓裝置,在經濟性上不佳。 (製造方法D ) 對以上述製造方法A〜C所得之脂環式化合物而言, 係可進行以下所示之羥基保護反應。特別是,上述製造方 法A〜C中’在使用以上述式(c〇)所示之膽酸作爲膽酸 類的情況等’當脂環式化合物之上述一般式(a )中的Rb 〇 、Re及Rd3個同時爲羥基時,有必要進行以下之羥基保護 反應。 製造方法D中所用的脂環式化合物方面,係下述以一 般式(1 -1 )所示者爲佳。 〔化 2 5〕The halogenated alkyl ether system in the production method A can be obtained by reacting an alcohol containing an adamantane in the presence of a wake-up with a hydrogen halide gas. In this case, the organic solvent may be used in the presence or absence of the organic solvent. However, when the organic solvent is used in the case of -20-201040136, the amount of the alcohol having the adamantane structure is not particularly limited, and is not particularly limited. It is preferred to adjust the substrate concentration to 01 mol/l to 10 m/l. If the substrate concentration is 〇. Moer / liter or more, since the necessary amount can be obtained in a general reactor, it is economically preferable, and the right substrate concentration is 1 〇 mol / liter or less 'the reaction liquid Temperature control is easy and preferred. Examples of the organic solvent that can be used include hydrocarbon-based solvents such as hexane, heptane, cyclohexane, ethylcyclohexane, benzene, toluene, and xylene; diethyl ether, dibutyl ether, and tetrahydrofuran ( An ether-based solvent such as THF), dioxane or dimethoxyethane (DME); a halogen-based solvent such as dichloromethane or carbon tetrachloride; wherein the halogen-based solvent having a high dissolved amount of hydrogen halide gas is It is preferable to use one type or a mixture of two or more types. Further, although the reaction temperature may be any temperature, if the temperature is too high, the solubility of the hydrogen halide gas may be lowered. If the temperature is too low, the progress of the reaction itself may be slow, so that 〇°C~4〇°C It is better. Although the pressure can be any pressure, it is necessary to control the side reaction under pressure, and it is preferable to use normal pressure. Also, when the pressure is too high, it is necessary to have a special pressure-resistant device, which is not economically good. Specific examples of the halogenated alkyl ether body thus obtained include, for example, a 1,3-, 5-thio(halomethoxy) fused house. The esterification reaction in Production Method A can be carried out by reacting a sulfonate group with a cholic acid. Further, it may be carried out in the presence or absence of an organic solvent, but in the case of using an organic solvent, it is preferred to adjust the substrate concentration to ι·m mole/liter to 10 m/liter. If the substrate concentration is -21 - 201040136 0.1 mol/liter or more, it is economical because it is in a general reactor, and if the substrate concentration is 10, the temperature control of the reaction liquid is easy and preferable. The surface to be used may be a hydrocarbon-based solvent such as hexane, heptane, cyclohexane, ethylcyclohexyl or xylene; diethyl ether, dibutyl (THF), dioxane or dimethoxy group. Ethane (DME) medium; halogen-based solvent such as dichloromethane or carbon tetrachloride; methyl formamidine, dimethyl hydrazine (DMSO), N-ketone (NMP), trimethyl hexamethyl phosphate Apron (HMPA) Aminoproline (HMPT), a disulfide, or the like may be used alone or in combination of two or more. Sodium hydride, sodium hydroxide, lithium hydroxide, lithium 'sodium hydrogencarbonate, lithium argon carbonate, silver oxide, sodium citrate monohydrogenate, lithium dihydrogen citrate, lithium monohydrogen citrate, sodium Methoxide, lithium t-butoxide, triethylamine trioctylamine, pyridine, N,N-dimethylaminopyridine, 1 [4,3,0]non-5-ene (DBN), An inorganic base such as l,8-diazabicyclocarbon-7-ene (DBU) or an organic amine. After the above esterification reaction, the reaction product liquid is separated to extract the product from the water layer as needed. The alicyclic compound of the present invention can be obtained by distilling off the solvent from the reaction liquid. Alternatively, the reaction solution may be supplied to the next reverse side without purification, and may be obtained by distillation, extraction, washing, crystallization, re-precipitation, cerium oxide colloidal column chromatography, and the like. An alcohol-soluble DMF (n,N-dimethyl-2-pyrrolidine or hexamethylphosphorous polar solvent) of the organic solvent pentane, benzene, toluene, tetrahydrofuran or the like Base, sodium carbonate, carbonic acid, lithium niobate, ruthenium, dihydrogen monobutyrate, tributylamine, 5-diazabicyclo[5,4,0] eleven water and organic layer, by decompression It can be purely as needed. Purification method, activated carbon adsorption, considering the production scale of -22-201040136, the necessary purity to choose, but because it can be operated at a lower temperature, and can process a large number of samples at a time' It is preferred to use a method of washing, crystallization or reprecipitation, especially in the method of removing the raw material used from the alicyclic compound of the present invention, although various methods can be employed, but it is operative or economical. From the point of view, it is based on the use of alicyclic compounds. The method of washing the raw material with a poor solvent is preferred. Among the poor solvents for the alicyclic compound, the lower boiling point is preferred, and representative examples include diethyl ether 0, methanol, ethanol, η- Hexane, η-heptane, etc. (Production Method Β) The alcohol and the bile acid having the adamantane structure in the above production method can be used in the same manner as the above-mentioned production method. The hydrazine side may, for example, be dimethyl hydrazine, diethyl hydrazine, di-η-propyl fluorene, diisopropyl hydrazine, di-η-butyl fluorene, diisobutyl fluorene, Symmetrical or asymmetrical symmetry or asymmetry of di-sec-butyl hydrazine, di-ter t-butyl fluorene, triisoamyl sulfoxide, methyl ethyl hydrazine, methyl-tert-butyl fluorene The aliphatic hydrazine may be used singly or in combination of two or more kinds. However, considering the unity of the reaction product, a symmetrical aliphatic fluorene is preferable, and a dimethyl fluorene having a short chain length alkyl group is more preferable. Examples of the acid anhydride in the production method B include acetic anhydride, propionic anhydride, butyric anhydride, isobutyric anhydride, geishic anhydride, trimethyl acetic anhydride, benzoic anhydride, and chlorine B. An aliphatic or aromatic carboxylic acid anhydride such as an anhydride or a trifluoroacetic acid anhydride may be used alone or in combination of two or more. Examples of the halogenating agent in the production method B include sulfonium chloride, -23-201040136 chlorination. a halogenated sulfur compound such as a sulfonyl group, a sulfonium bromide group, a brominated sulfonium sulfonate group, a sulfonium bromide sulfonate group, a brominated sulfonium sulfonate group, or a phosphorus trichloride, phosphorus tribromide or triiodide A phosphorus halide compound such as phosphorus, trichlorophosphoric acid, phosphorous tribromide, phosphorus pentachloride or phosphorus pentabromide may be used alone or in combination of two or more. The system can be obtained by reacting an alcohol having an adamantane structure in the presence of an alkyl sub-milling and an acid anhydride. In this case, although it can be carried out in the presence or absence of an organic solvent, it is usually used in a large excess. The alkyl hydrazine and the acid anhydride are reacted as a reaction reagent and a solvent. Particularly in the case of using an organic solvent, it is preferred to adjust the substrate concentration to 1 mol/l to 10 m/l. If the substrate concentration is 1 mol/L or more, the necessary amount can be obtained in a general reactor, so it is economically preferable, and if the substrate concentration is 10 mol/liter or less, the temperature of the reaction liquid Control is easy and better. Examples of the organic solvent that can be used include hydrocarbon-based solvents such as hexane, heptane, cyclohexane, ethylcyclohexane, benzene, toluene, and xylene; diethyl ether, dibutyl ether, and THF ( An ether-based solvent such as tetrahydrofuran), dioxane or DM E (dimethoxyethane); or a halogen-based solvent such as dichloromethane or carbon tetrachloride; and one type or a mixture of two or more types may be used. Use it. Although the reaction temperature can be any temperature, if the temperature is too high, the selectivity caused by the side reaction will decrease. If the temperature is too low, the reaction itself will be slowed down, and the room temperature will be ~60. °C is better. Although the pressure can be any pressure, it is necessary to control the side reaction under pressurized conditions, and it is preferable to use normal pressure. When the pressure is too high, it is necessary to have a special pressure-resistant device, which is not economically good. Specific examples of the alkylthioalkyl ether body thus obtained include -24-201040136, 1,3,5-glycol(methylthiomethoxy)adamantane and the like. The halogenated alkyl ether system in Production Process B can be obtained by reacting the above alkylthioalkyl ether body with a halogenating agent. In this case, the halogenating agent may be used in a large amount as a reaction reagent and a solvent, although it may be carried out in the presence or absence of an organic solvent. Particularly in the case of using an organic solvent, it is preferred to adjust the substrate concentration to 0.1 mol/l to 10 m/l. If the substrate concentration is 0.1 mol/L or more, since it is necessary to obtain a necessary amount in a general reactor, it is economically preferable, and if the substrate concentration is 10 mol/liter or less, the temperature of the reaction liquid is higher. Control is easy and better. Examples of the organic solvent that can be used include hydrocarbon-based solvents such as hexane, heptane, cyclohexane, ethylcyclohexane, benzene, toluene, and xylene; diethyl ether, dibutyl ether, and tetrahydrofuran ( An ether-based solvent such as THF), dioxane or dimethoxyethane (DME); a halogen-based solvent such as dichloromethane or carbon tetrachloride; and one or a mixture of two or more of them may be used. It. Although the reaction temperature can be any temperature, if the temperature is too high, the selectivity caused by the side reaction will decrease. If the temperature is too low, the reaction itself will slow down, and the room temperature will be ~1. 0 0 °c is preferred. Although the pressure can be any pressure, it is preferable to control the side reaction because of the pressure under the pressurized condition. When the pressure is too high, it is necessary to have a special pressure-resistant device, which is not economically good. Specific examples of the halogenated alkyl ether body thus obtained include 1,3,5-gin(halomethoxy)adamantane and the like. The esterification reaction in the production method B can be carried out in the same manner as in the esterification reaction in the above production method a. -25-201040136 (Manufacturing Method c) The vinyl ether structure of the adamantane structure in the above production method c is exemplified by 1,3,5-glycol (ethyleneoxy)adamantane, 1,3,5-parameter (Vinyloxymethyl) King Kong Institute and the like. In the case of the cholic acid in the production method C, the same method as the above production method A can be used. Examples of the acid catalyst in the production method C include any organic and inorganic acid defined by Lewis acid, Brucenic acid, and arrhenic acid, but preferably, formic acid, acetic acid, and hydrochloric acid are mentioned. , sulphuric acid, nitric acid, methanesulfonic acid, p-toluenesulfonic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, and the like. In the above production method C, a vinyl ether having an adamantane structure is reacted with a cholic acid in the presence of an acid catalyst. In this case, the organic solvent may be used in the presence or absence of an organic solvent. However, when the organic solvent is used, it is not particularly limited as long as it is equal to or less than the saturated solubility of the vinyl ether having an adamantane structure. The substrate concentration is 〇. 1 mol / liter ~ 1 0 m / liter is preferred. If the substrate concentration is 0.1 mol/L or more, since the necessary amount can be obtained in a general reactor, it is economically preferable, and if the substrate concentration is 1 〇 mol/liter or less, the temperature of the reaction liquid Control is easy and better. Examples of the organic solvent that can be used include hydrocarbon-based solvents such as hexane, heptane, cyclohexane, ethylcyclohexane, benzene, toluene, and xylene; diethyl ether, dibutyl ether, and tetrahydrofuran ( An ether-based solvent such as THF), dioxane or dimethoxyethane (DM E ); halogen-26-201040136-based solvent of methylene chloride or carbon tetrachloride, wherein the dissolved amount of hydrogen halide gas is high. The halogen-based solvent is preferable, and one type of these may be used or two or more types may be used in combination. Further, although the reaction temperature may be any temperature, if the temperature is too high, the vinyl ethers containing the adamantane structure will polymerize each other to cause the occurrence of side reactions. If the temperature is too low, the progress of the reaction itself becomes slow. It is better to use 〇乞 ~ 4 0 °C. Although the pressure can be any pressure, it is necessary to control the side reaction under pressure conditions, and it is preferable to use normal pressure. Also, when the pressure is too high, it is necessary to have a special pressure-resistant device, which is not economically good. (Production Method D) For the alicyclic compound obtained by the above Production Methods A to C, the hydroxy protection reaction shown below can be carried out. In particular, in the above production methods A to C, 'in the case where cholic acid represented by the above formula (c〇) is used as the cholic acid, etc., 'Rb 〇, Re in the above general formula (a) of the alicyclic compound. When the three Rd groups are simultaneously hydroxyl groups, it is necessary to carry out the following hydroxy protection reaction. The alicyclic compound used in the production method D is preferably the one represented by the general formula (1-1). [Chem. 2 5]

(式中’以4〜Ra6係各自獨立地爲下述以一般式(a-Ι )所 不之含膽酸類酯構造之基’較佳爲下述以式(a-2)所示 -27- 201040136 之含膽酸類酯構造之基。) 〔化 2 6〕(In the formula, '4 to Ra6 are each independently a group containing a cholic acid ester structure which is not represented by the general formula (a-Ι), and is preferably represented by the following formula (a-2)-27 - 201040136 The base of the cholic acid ester structure.) [Chem. 2 6]

(式中’ Rh及Ri各自獨立地爲氫原子或羥基。) 〔化 2 7〕(wherein 'R and Ri are each independently a hydrogen atom or a hydroxyl group.) [Chem. 2 7]

製造方法D中之含氧有機化合物係可使用由下述以一 般式(dl)所示之羧酸鹵化物類、下述以一般式(d2)所 示之碳酸酯無水物、下述以一般式(d3 )所示之鹵化烷基 酸類、下述以一般式(d4 )所示之鹵化乙酸酯類及下述以 -般式(d5 )所示之鹵化矽烷類所選出之丨種以上。 〔化 2 8〕 A W1) (式中,Z1表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基;X表示鹵素原子。) 〔化 2 9〕 Z2〆The oxygen-containing organic compound in the production method D can be a carboxylic acid halide represented by the following formula (d1), a carbonate anhydrate represented by the following formula (d2), and the following The halogenated alkyl acids represented by the formula (d3), the halogenated acetates represented by the general formula (d4), and the halogenated decanes represented by the following formula (d5) are selected from the above. [Chem. 2 8] A W1) (wherein Z1 represents a linear, branched or cyclic hydrocarbon group having 1 to 15 carbon atoms which may have a hetero atom; X represents a halogen atom.) [Chem. 2 9] Z2〆

(d2) (式中,Z2表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基。) -28- 201040136 〔化 3 0〕(d2) (wherein Z2 represents a linear, branched or cyclic hydrocarbon group which may have a carbon number of 1 to 15 of a hetero atom.) -28- 201040136 [Chemical 3 0]

(式中’ Ζ3表示可具有雜原子之碳數1〜9的直鏈狀、分 支狀或環狀之烴基;及Rh各自獨立地表示氫原子或是 可具有雜原子之碳數1〜1 〇的直鏈狀、分支狀或環狀之烴 基;X表示鹵素原子。)(wherein Ζ3 represents a linear, branched or cyclic hydrocarbon group which may have a carbon number of 1 to 9 of a hetero atom; and Rh each independently represents a hydrogen atom or a carbon number which may have a hetero atom of 1 to 1 〇 a linear, branched or cyclic hydrocarbon group; X represents a halogen atom.)

(式中,Z4表示可具有雜原子之碳數丨〜15的直鏈狀、分 支狀或環狀之烴基;χ表示鹵素原子。) 〔化 3 2〕(wherein Z4 represents a linear, branched or cyclic hydrocarbon group which may have a carbon number of 杂 15 of a hetero atom; χ represents a halogen atom.) [Chemical 3 2]

(式中’Z5〜Z7各自獨立地表示可具有雜原子之碳數1〜 1 0的直鏈狀、分支狀或環狀之烴基;X表示齒素原子。) 上述製造方法D中之羥基保護反應,係對上述製造方 法A〜C中所得之脂環式化合物的經基,使含氧有機化合 物反應。此時’雖可於有機溶媒之存在或不存在下予以進 行’但在使用有機溶媒的情況時’若爲脂環式化合物之飽 和溶解度以下的話’則無特別限定,係以調節基質濃度至 0.1莫耳/升〜10莫耳/升爲佳。基質濃度若爲莫耳 /升以上,因在一般的反應器即可獲得必須的量,故在經 濟性上較佳’而若基質濃度爲10莫耳/升以下,則反應 201040136 液的溫度控制容易而較佳。 可使用的有機溶媒方面,可舉出己烷、庚烷、環己烷 、乙基環己烷、苯、甲苯、二甲苯等之烴系溶媒;二乙基 醚、二丁基醚、四氫呋喃(THF)、二噁烷、二甲氧基乙 烷(DME )等之醚系溶媒;二氯甲烷、四氯化碳等之鹵素 系溶媒,其中以鹵化氫氣體之溶存量高的鹵素系溶媒爲佳 ,且此等係可使用1種或混合2種以上使用之。 又,反應溫度雖可採用任意溫度,但若溫度過高,會 導致既存的酯鍵結或縮醛鍵結的分解,若溫度過低,反應 本身的進行會變慢,因此,以0 °C〜4 0 °C爲佳。 壓力雖可採用任意壓力,但因在加壓條件下亦必須控 制副反應之故,而以常壓爲佳。又,壓力過高時,必須要 有特別的耐壓裝置,在經濟性上不佳。 本發明又提供一種含有上述本發明之脂環式化合物的 組成物。 本發明之組成物係以進一步含有溶媒、酸產生劑、消 化體(quencher)、各種添加劑等爲佳。 本發明之組成物係可利用於種種的用途,例如電路形 成材料(半導體製造用光阻、印刷配線板等)、影像形成 材料(印刷版材、立體(relief )影像等)等,特別是以 用爲光阻組成物者爲佳,用爲正型光阻組成物者更佳。 本發明尙提供一種由上述本發明之組成物所構成之正 型光阻組成物。 本發明之正型光阻組成物若爲含有本發明之含脂環構 -30- 201040136 造之化合物者,並無特別限定,在本發明之正型光阻組成 物的全量基準下,本發明之含脂環構造之化合物係以含有 2〜50質量%者爲佳,以含有5〜15質量%者更佳。 本發明之正型光阻組成物,除了上述含脂環構造之化 合物以外,係可添加光酸產生劑(PAG )或有機胺等之消 化體(q u e n c h e r )、驗可溶性樹脂(例如酣酸清漆樹脂、 苯酚樹脂、醯亞胺樹脂、含羧基樹脂等)等之鹼可溶成分 0 、著色劑(例如染料等)、有機溶媒(例如烴類、鹵化烴 類、醇類、酯類、酮類、醚類、溶纖劑類、卡必醇類、甘 醇醚酯類、此等之混合溶媒等)等。 光酸產生劑方面,係藉由曝光而可效率佳地生成酸之 慣用化合物,可舉例如二疊氮鐵鹽、鋏鹽(例如六氟磷酸 二苯基捵鹽等)、锍鹽(例如六氟銻酸三苯基鏑鹽、六氟 磷酸三苯基鏑鹽、甲烷磺酸三苯基銃鹽等)、磺酸鹽〔例 如1-苯基-1- ( 4-甲基苯基)磺醯基氧基-1-苯甲醯基甲烷 〇 、1,2,3-三磺醯基氧基甲基苯、1,3-二硝基-2-(4-苯基磺 醯基氧基甲基)苯、1-苯基-1-(4-甲基苯基磺醯基氧基甲 基)-1-羥基-1-苯甲醯基甲烷等〕、氧雜噻唑衍生物、s-三嗪衍生物、二碾衍生物(二苯基二颯等)、醯亞胺化合 物、肟磺酸鹽、二疊氮萘醌、安息香甲苯磺酸鹽等。 此等之光酸產生劑係可單獨使用或組合2種以上使用 之。再者,此等之光酸產生劑亦可使用作爲熱酸產生劑。 本發明之正型光阻組成物中之光酸產生劑的使用量, 可視藉光照射所生成之酸的強度或前述含脂環構造之化合 -31 - 201040136 物的含量等來適當地選擇,例如對前述含脂環構造之化合 物的全量1〇〇質量份而言,較佳爲含有光酸產生劑0.1〜 30質量份、更佳爲1〜25質量份、再更佳爲2〜20質量份 〇 消化體(quencher )係可任意地使用脂肪族胺、環式 胺、芳香族胺等之公知者,其中更以脂肪族胺,特別是第 2級脂肪族胺或第3級脂肪族胺爲佳。在此,所謂脂肪族 胺,係指具有〗個以上之脂肪族基的胺,而該脂肪族基係 以碳數爲1〜20者爲佳。 脂肪族胺方面,可舉例如使氨NH3的氫原子之至少1 個經碳數20以下之烷基或羥基烷基所取代之胺(烷基胺 或烷基醇胺)或環式胺。 烷基胺及烷基醇胺的具體例方面,可舉出η-己基胺、 η-庚基胺、η-辛基胺、η-壬基胺、η_癸基胺等之單烷基胺 ;二乙基胺、二-η -丙基胺、二-η-庚基胺、二-η-辛基胺、 一環己基fee #之—院基胺;三甲基胺、三乙基胺、三-n —丙 基胺、三-η-丁基胺、三_n_己基胺、三-n_戊基胺、三-n_庚 基胺、三-η -辛基胺、三-n_壬基胺、三-n_癸基胺 '三-n_ + 二烷基胺等之三烷基胺;二乙醇胺、三乙醇胺、二異丙醇 胺、三異丙醇胺、二-n_辛醇胺、三-η·辛醇胺、硬脂醯二 乙醇胺、月桂基二乙醇胺等之烷基醇胺。此等之中,以碳 數5〜10之三烷基胺或烷基醇胺爲佳,而三-n_戊基胺、二 乙醇胺 '硬脂醯二乙醇胺則特別佳。 環式胺方面’可舉例如含有氮原子作爲雜原子之雜環 -32- 201040136 化合物。該雜環化合物方面,可爲單環式者(脂肪族單環 式胺)或多環式者(脂肪族多環式胺)。 脂肪族單環式胺方面,具體而言,可舉出哌啶、哌嗪 等。 脂肪族多環式胺方面係以碳數爲6〜10者爲佳,具體 而言’可舉出I,5-二氮雜雙環〔4.3.0〕_5·壬烯、1,8-二氮 雜雙環〔5.4.0〕_7_十一碳烯、六甲撐四胺、1,4-二氮雜雙 〇 環〔2.2.2〕辛烷等。 芳香族胺方面,可舉出苯胺、吡啶、4-二甲基胺基吡 陡、吡咯、吲哚 '吡嗖、咪唑或此等之衍生物、二苯基胺 '三苯基胺、三苯甲基胺等。 其他的脂肪族胺方面,可舉出參(2-甲氧基甲氧基乙 基)胺、參{2-(2-甲氧基乙氧基)乙基}胺、參{ 2-( 2_甲氧基乙氧基甲氧基)乙基}胺、參{2-(1-甲氧基乙 氧基)乙基}胺、參{2-(1-乙氧基乙氧基)乙基}胺、 Ο 參M2-(l-乙氧基丙氧基)乙基}胺、三〔2-{2-(2-羥 基乙氧基)乙氧基}乙基胺等。 此等可單獨使用,亦可組合2種以上使用之。 本發明之光阻組成物中之消化體(quencher )的使用 量會爲了使光阻圖型形狀、拉伸放置之經時安定性等向上 提升而可適當地選擇,例如對前述脂環式化合物1 00質量 份而言,較佳爲含有消化體(quencher) 0〜10質量份、 更佳爲0.01〜5.0質量份。 本發明之正型光阻組成物係混合前述含脂環構造之化 -33- 201040136 合物與光酸產生劑、消化體(qUencher )及因應需 合前述有機溶媒等,且可視需要藉由過濾器等之慣 體分離手段去除夾雜物而得以調製。將此正型光阻 塗佈於基材或基板上,且經乾燥後,透過規定的光 塗膜(光阻膜)上讓光線曝光(或進一步進行曝光 )而形成潛像圖型,接著可藉由顯像,以高精密度 細圖型。 本發明亦提供一種光阻圖型形成方法,其係含 要而於支持體上進行疏水化處理之步驟、使用上述 阻組成物而於支持體上形成光阻膜之步驟、使該光 擇性曝光之步驟以及將經選擇性曝光之光阻膜予以 處理而形成光阻圖型之步驟。 上述疏水化處理中所使用之疏水化處理劑,係 知者任意地使用,例如較佳爲雙(烷基矽烷基)胺 爲六甲基二矽氮烷(HMDS)。 上述支持體方面,可舉出矽晶圓、金屬、塑膠 、陶瓷等。光阻組成物的塗佈係可使用旋轉塗佈、 佈、輥筒塗佈等之慣用的塗佈手段來進行。塗膜的 例如較佳爲0.0 1〜2 0 μπι、更佳爲0.0 5〜1 μηι。 在使光阻膜選擇性曝光之步驟中,係可利用種 的光線,例如紫外線、X線等,而在半導體光阻用 通常可使用g線、i線、準分子雷射(例如XeCl、 KrCl、ArF、ArCl等)、軟X線等。曝光能量係例 〜1000mJ/cm2、較佳爲1〜i〇〇mJ/cm2之程度。 要而混 用的固 組成物 罩,在 後烘烤 形成微 有視需 正型光 阻膜選 鹼顯像 可從公 、更佳 、玻璃 浸漬塗 厚度, 種波長 方面, KrF、 丨如0.1 -34 - 201040136 上述正型光阻組成物中所含的脂環式化合物因具有縮 醛構造之故,而有酸分解之機能。因此,藉由上述選擇性 曝光而自光酸產生劑生成酸,且藉由此酸,根據前述脂環 式化合物的構造,其中縮醛構造部分會快速地速脫離,而 生成有助於可溶化之羧基或羥基。因此,藉使用水或鹼顯 像液進行顯像處理,而可精度佳地形成規定的圖型。 0 〔實施例〕 以下有關本發明,係顯示出實施例及比較例以更具體 地進行說明,但本發明並不受任何此等所限制。 此外,各種分析方法係如以下所示來實施。 〔氣體層析(GC)〕 使用Agilent公司製之6 8 50系列進行分析。 〔核磁共振分光法(N M R )〕 溶媒方面係使用氯仿-d或二甲基亞碾-d6,且以曰本 〇 電子股份公司製之JNM-ECA500進行測定。 〔氣體層析-質量分析(GC-MS)〕 使用股份公司島津製作所製GCMS-QP2010,以EI法 進行測定。 〔衰減全反射紅外線分光法(ATR-FTIR)〕 使用PerkinElmer公司製Spectrum One’以傅利葉變 換-全反射法(FT-ATR)進行測定。 〔膠體滲透層析(GPC)〕 以TOSOH股份公司製HLC-8220GPC進行測定。 -35- 201040136 〔示差掃瞄熱量分析(DSC )〕 使用 SII NanoTechnology 股份公司製 EXSTAR DSC7020進行測定。 〔熱重量/示差熱分析(TG/DTA)〕 使用 SII NanoTechnology 股份公司製 EXSTAR TG / DTA7200進行測定。 〔膜厚及規格化膜厚〕 使用光學式膜厚計(FILMETRICS股份公司製F20-UV、或大塚電子股份公司製FE-3 000 )或接觸式膜厚計( 股份公司小坂硏究所製ET-4000A )來測定膜厚,令顯像 前之膜厚爲1.00來算出規格化膜厚。 實施例1 (三石膽酸 金剛烷-1, 3,5 -三基參氧基甲基酯的 合成) 於 50mL 二口燒瓶中,置入以國際公開公報 W〇2〇〇7〇947 8 4A中記載之方法所合成而得之ι,3,5-參(甲 基硫代甲氧基)金剛烷〔分子量:364.59,1823mg, 5mmo1〕 ’緩慢地滴下氯化硫醯基〔分子量:1 18.97, l-32mL· ’ 18mm〇l〕後攪拌2小時。將殘留的氯化硫醯基 以真空泵浦予以法除。 將溶於四氦呋喃(THF ) 20mL中之石膽酸( lithocholic acid)〔分子量:3 76.5 7,5 649mg,15mmol, 1.0當量〕使用套管(cannula )進行滴下,再洗入 THF5mL2次。接著,當滴下三乙基胺〔分子量:101.19, -36- 201040136 d= 0.726,2.51mL,18.0mmol,1.2 當量〕時,反應液會 快速地變白濁,且可觀察到少許發熱。持續攪拌20小時 之後,加入水50mL使反應停止。於反應混合液中加入 THF20mL與二乙基醚1 00mL,予以震盪、靜置之後,分 成水層與有機層。在水層中再加入二乙基醚50mL且予以 震盪、靜置之後,分成水層與有機層。將此操作再重複進 行2次。使所得之有機層以硫酸鎂乾燥且過濾之後,餾去 〇 溶媒。將去除溶媒後的殘澄溶解於THF20mL並滴入二乙 基醚5 00mL中,即得目的物之三石膽酸金剛烷-1,3,5-三 基參氧基甲基醋的白色固體〔3.051mg,2.26mmol,單離 產率 4 5 · 2 %〕。 <物性數據> 熱重量/示差熱分析法(TG/DTA): Td5 = 164.8 °C 衰減全反射紅外線分光法(ATR-FTIR) : 3313.6,2926.6 ❹ ,2863.3 > 1706.1 , 1100.3 > 1034.5 核磁共振分光法(N M R ): 'H-NMR: 0.62 (s,9Η) 0.87 〜0.89( m,18Η) , 1.06 〜 2.21 ( m,97H) ,3.42 〜3.5 2 ( b r - s,3 Η ) ,3.60 〜3.63 (m > 3 Η ) ,4.58 〜4.80( m,6H) ,3C-NMR : 1 1.8 1 ( a2 ) ,18.07 ( al) ,20.40,23.16 ( a3 ),23.79 , 25.13 , 26.86 , 27.70 , 29.50 - 30.64 , 30.68 ,34.27,34.79,3 5.33,39.65 - 39.94,4 1.48,42.26, 43.00,52.3 0,55.53,56.04,65.70,67.0 1 , 7 5.5 6, -37- 201040136(In the formula, 'Z5 to Z7 each independently represent a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 10 which is a hetero atom; X represents a dentate atom.) Hydroxyl protection in the above production method D The reaction is carried out by reacting the oxygen-containing organic compound with the radical of the alicyclic compound obtained in the above Production Methods A to C. In this case, 'it may be carried out in the presence or absence of an organic solvent', but in the case of using an organic solvent, 'if the saturated solubility of the alicyclic compound is below', there is no particular limitation, and the substrate concentration is adjusted to 0.1. Moer / liter ~ 10 m / liter is better. If the substrate concentration is more than mol/L, the necessary amount can be obtained in a general reactor, so it is economically preferable. And if the substrate concentration is 10 mol/L or less, the temperature control of the reaction 201040136 liquid Easy and better. Examples of the organic solvent that can be used include hydrocarbon-based solvents such as hexane, heptane, cyclohexane, ethylcyclohexane, benzene, toluene, and xylene; diethyl ether, dibutyl ether, and tetrahydrofuran ( An ether-based solvent such as THF), dioxane or dimethoxyethane (DME); a halogen-based solvent such as dichloromethane or carbon tetrachloride; wherein a halogen-based solvent having a high dissolved amount of hydrogen halide gas is It is preferable to use one type or a mixture of two or more types. Further, although the reaction temperature may be any temperature, if the temperature is too high, decomposition of the existing ester bond or acetal bond may occur, and if the temperature is too low, the progress of the reaction itself may be slow, so 0 ° C ~ 4 0 °C is preferred. Although the pressure can be any pressure, it is necessary to control the side reaction under pressure, and it is preferable to use normal pressure. Also, when the pressure is too high, it is necessary to have a special pressure-resistant device, which is not economically good. The present invention further provides a composition comprising the above alicyclic compound of the present invention. The composition of the present invention preferably further contains a solvent, an acid generator, a quener, various additives and the like. The composition of the present invention can be used for various applications such as circuit forming materials (photoresist for semiconductor manufacturing, printed wiring boards, etc.), image forming materials (printing plates, relief images, etc.), etc., particularly It is preferably used as a photoresist composition, and is preferably used as a positive photoresist composition. The present invention provides a positive resist composition comprising the above composition of the present invention. The positive resist composition of the present invention is not particularly limited as long as it contains the compound of the present invention containing the alicyclic structure-30-201040136, and the present invention is based on the full amount of the positive resist composition of the present invention. The compound having an alicyclic structure is preferably 2 to 50% by mass, more preferably 5 to 15% by mass. In addition to the above-mentioned compound containing an alicyclic structure, the positive-type photoresist composition of the present invention may be a photo-acid generator (PAG) or a quencher of an organic amine or the like, and a soluble resin (for example, a phthalic acid varnish resin). An alkali soluble component such as a phenol resin, a quinone imine resin or a carboxyl group-containing resin, a coloring agent (for example, a dye), and an organic solvent (for example, a hydrocarbon, a halogenated hydrocarbon, an alcohol, an ester, a ketone, or the like). Ethers, cellosolves, carbitols, glycol ether esters, mixed solvents, etc.). The photoacid generator is a conventional compound which can efficiently form an acid by exposure, and examples thereof include a diazide iron salt, a phosphonium salt (for example, diphenylphosphonium hexafluorophosphate), and a phosphonium salt (for example, six). Triphenylsulfonium fluoroantimonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium methanesulfonate, etc.), sulfonate [eg 1-phenyl-1-(4-methylphenyl)sulfonate Mercaptooxy-1-benzylidene methane oxime, 1,2,3-trisulphonyloxymethylbenzene, 1,3-dinitro-2-(4-phenylsulfonyloxy) Methyl)benzene, 1-phenyl-1-(4-methylphenylsulfonyloxymethyl)-1-hydroxy-1-benzomethylmethane, etc., oxathiazole derivatives, s- A triazine derivative, a second mill derivative (diphenyldifluorene, etc.), a quinone imine compound, an anthracene sulfonate, a diazonaphthoquinone, a benzoin tosylate or the like. These photoacid generators may be used singly or in combination of two or more. Further, these photoacid generators can also be used as a thermal acid generator. The amount of the photoacid generator to be used in the positive resist composition of the present invention can be appropriately selected depending on the strength of the acid generated by the irradiation of light or the content of the above-mentioned compound containing the alicyclic structure -31 - 201040136, and the like. For example, the total amount of the alicyclic structure-containing compound is preferably 0.1 to 30 parts by mass, more preferably 1 to 25 parts by mass, still more preferably 2 to 20 parts by mass of the photoacid generator. The quencher may optionally use an aliphatic amine, a cyclic amine, an aromatic amine or the like, among which an aliphatic amine, particularly a secondary aliphatic amine or a third aliphatic amine, is further used. It is better. Here, the aliphatic amine means an amine having at least one or more aliphatic groups, and the aliphatic group is preferably a carbon number of from 1 to 20. The aliphatic amine may, for example, be an amine (alkylamine or alkylolamine) or a cyclic amine in which at least one hydrogen atom of ammonia NH3 is substituted with an alkyl group having 20 or less carbon atoms or a hydroxyalkyl group. Specific examples of the alkylamine and the alkylolamine include monoalkylamines such as η-hexylamine, η-heptylamine, η-octylamine, η-decylamine, and η-decylamine. Diethylamine, di-n-propylamine, di-η-heptylamine, di-η-octylamine, monocyclohexylfee#-household amine; trimethylamine, triethylamine, Tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-heptylamine, tri-n-octylamine, tri-n a trialkylamine such as decylamine, tri-n-decylamine 'tri-n- + dialkylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n_ An alkyl alcohol amine such as octanolamine, tri-n-octanolamine, stearin diethanolamine or lauryl diethanolamine. Among these, a trialkylamine or an alkylolamine having 5 to 10 carbon atoms is preferred, and tris-n-pentylamine and diethanolamine 'stearyl bismuth diethanolamine are particularly preferred. The cyclic amine aspect may, for example, be a heterocyclic ring-32-201040136 compound containing a nitrogen atom as a hetero atom. The heterocyclic compound may be a monocyclic one (aliphatic monocyclic amine) or a polycyclic one (aliphatic polycyclic amine). Specific examples of the aliphatic monocyclic amine include piperidine and piperazine. The aliphatic polycyclic amine is preferably a carbon number of 6 to 10, and specifically, 'I,5-diazabicyclo[4.3.0]-5 perylene, 1,8-diaza Heterobicyclo[5.4.0]_7_undecene, hexamethylenetetramine, 1,4-diazabiguanide ring [2.2.2] octane, and the like. Examples of the aromatic amine include aniline, pyridine, 4-dimethylaminopyrrolidine, pyrrole, 吲哚'pyridinium, imidazole or derivatives thereof, diphenylamine 'triphenylamine, triphenylene Methylamine, etc. Other aliphatic amines include gin(2-methoxymethoxyethyl)amine, gin {2-(2-methoxyethoxy)ethyl}amine, and {2-( 2 _methoxyethoxymethoxy)ethyl}amine, gin {2-(1-methoxyethoxy)ethyl}amine, gin {2-(1-ethoxyethoxy)B Amine, hydrazine M2-(l-ethoxypropoxy)ethyl}amine, tris[2-{2-(2-hydroxyethoxy)ethoxy}ethylamine, and the like. These may be used alone or in combination of two or more. The amount of the quencher used in the photoresist composition of the present invention can be appropriately selected in order to increase the shape of the resist pattern, the stability over time of stretching, and the like, for example, the aforementioned alicyclic compound. The amount of the 00 parts by mass is preferably 0 to 10 parts by mass, more preferably 0.01 to 5.0 parts by mass, based on the quencher. The positive-type photoresist composition of the present invention is obtained by mixing the above-mentioned alicyclic structure-containing compound-33-201040136 compound with a photoacid generator, a digestive body (qUencher), and the above-mentioned organic solvent, and the like, and filtering as needed. The inertial separation means such as a device removes inclusions and is modulated. Applying the positive photoresist to the substrate or the substrate, and drying, and then exposing (or further exposing) the light through a predetermined light coating film (photoresist film) to form a latent image pattern, and then By visualization, fine patterns are made with high precision. The present invention also provides a method for forming a photoresist pattern, comprising the steps of performing a hydrophobic treatment on a support, and forming a photoresist film on the support by using the resist composition, and making the photoselectivity The step of exposing and the step of treating the selectively exposed photoresist film to form a photoresist pattern. The hydrophobization treatment agent used in the above hydrophobization treatment is preferably used arbitrarily. For example, the bis(alkyl decyl)amine is preferably hexamethyldioxane (HMDS). Examples of the support include silicon wafers, metals, plastics, and ceramics. The coating of the photoresist composition can be carried out by a conventional coating means such as spin coating, cloth, or roll coating. The coating film is, for example, preferably 0.01 to 2 0 μm, more preferably 0.0 5 to 1 μm. In the step of selectively exposing the photoresist film, light of a species such as ultraviolet rays, X-rays, or the like can be utilized, and g-line, i-line, excimer laser (for example, XeCl, KrCl) can be generally used for semiconductor photoresist. , ArF, ArCl, etc.), soft X-ray, etc. The exposure energy is preferably -1000 mJ/cm2, preferably 1 to i〇〇mJ/cm2. The solid composition cover to be mixed and used for post-baking to form a micro-image of the positive-type resist film can be selected from the public, better, glass dip coating thickness, wavelength, KrF, such as 0.1-34 - 201040136 The alicyclic compound contained in the above positive resist composition has an acetal structure and has an acid decomposition function. Therefore, an acid is generated from the photoacid generator by the selective exposure described above, and by the acid, according to the configuration of the alicyclic compound, the acetal structure portion is rapidly detached, and the formation contributes to solubilization. Carboxyl or hydroxy. Therefore, by performing development processing using water or an alkali developing solution, a predetermined pattern can be formed with high precision. [Examples] Hereinafter, the present invention will be described more specifically by way of examples and comparative examples, but the present invention is not limited thereto. In addition, various analytical methods are implemented as follows. [Gas Chromatography (GC)] Analysis was carried out using a 6 8 50 series manufactured by Agilent. [Nuclear Magnetic Resonance Spectrometry (N M R )] The solvent was measured using chloroform-d or dimethyl arylene-d6, and JNM-ECA500 manufactured by Sigma-Aldrich Co., Ltd. [Gas chromatography-mass spectrometry (GC-MS)] The GCMS-QP2010 manufactured by Shimadzu Corporation was used for the measurement by the EI method. [Attenuated total reflection infrared spectroscopy (ATR-FTIR)] Measurement was carried out by Fourier transform-total reflection (FT-ATR) using a Spectrum One' manufactured by PerkinElmer. [Colloidal Permeation Chromatography (GPC)] Measured by HLC-8220GPC manufactured by TOSOH Co., Ltd. -35- 201040136 [Differential Scanning Thermal Analysis (DSC)] Measurement was carried out using EXSTAR DSC7020 manufactured by SII NanoTechnology Co., Ltd. [Thermal weight/differential thermal analysis (TG/DTA)] The measurement was carried out using EXSTAR TG / DTA7200 manufactured by SII NanoTechnology Co., Ltd. [Thickness and normalized film thickness] An optical film thickness meter (F20-UV manufactured by FILMETRICS Co., Ltd., or FE-3 000 manufactured by Otsuka Electronics Co., Ltd.) or a contact film thickness meter (ET produced by the company) -4000A) The film thickness was measured, and the film thickness before development was 1.00, and the normalized film thickness was calculated. Example 1 (Synthesis of adamantane-1,3,5-trisyloxymethyl ester) was placed in a 50 mL two-necked flask, and placed in International Gazette W〇2〇〇7〇947 8 4A i,3,5-parade (methylthiomethoxy)adamantane synthesized by the method described in the above [molecular weight: 364.59, 1823 mg, 5 mmo1] 'slowly dropping thiosulfanyl group [molecular weight: 1. 18.97 , l-32mL· '18mm〇l〕, and stirred for 2 hours. The residual sulfonium chloride is removed by vacuum pumping. Lithocholic acid (molecular weight: 3 76.5 7,5 649 mg, 15 mmol, 1.0 equivalent) dissolved in 20 mL of tetrahydrofuran (THF) was dropped using a cannula, and washed with THF 5 mL twice. Next, when triethylamine (molecular weight: 101.19, -36 - 201040136 d = 0.726, 2.51 mL, 18.0 mmol, 1.2 equivalent) was dropped, the reaction liquid quickly became cloudy, and a little heat was observed. After stirring continuously for 20 hours, 50 mL of water was added to stop the reaction. After adding 20 mL of THF and 100 mL of diethyl ether to the reaction mixture, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. Repeat this operation twice more times. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The residue after removal of the solvent was dissolved in 20 mL of THF and added dropwise to 500 mL of diethyl ether to obtain a white solid of the target product of adamantane-1,3,5-trisyloxymethyl vinegar [ 3.051 mg, 2.26 mmol, isolated yield 4 5 · 2 %]. <Physical data> Thermal weight/differential thermal analysis (TG/DTA): Td5 = 164.8 °C Attenuated total reflection infrared spectroscopy (ATR-FTIR): 3313.6, 2926.6 ❹ , 2863.3 > 1706.1 , 1100.3 > 1034.5 Nuclear magnetic resonance spectroscopy (NMR): 'H-NMR: 0.62 (s, 9 Η) 0.87 to 0.89 (m, 18 Η), 1.06 to 2.21 (m, 97H), 3.42 to 3.5 2 (br - s, 3 Η), 3.60 to 3.63 (m > 3 Η ) , 4.58 to 4.80 ( m, 6H) , 3C-NMR : 1 1.8 1 ( a2 ) , 18.07 ( al ) , 20.40 , 23.16 ( a3 ), 23.79 , 25.13 , 26.86 , 27.70 , 29.50 - 30.64 , 30.68 , 34.27 , 34.79 , 3 5.33 , 39.65 - 39.94 , 4 1.48 , 42.26 , 43.00 , 52.3 0,55.53 , 56.04 , 65.70 , 67.0 1 , 7 5.5 6, -37- 201040136

實施例2 (參(3-乙醯基膽酸)金剛烷-1,3,5-三基參氧基 甲基酯的合成) 於 200mL 二口燒瓶中,置入國際公開公報 W02007094784A中記載之方法所合成而得之三膽酸 金 剛烷-1,3,5-三基參氧基甲基〔分子量:1 44 5.98,434 0m g ,3mmol〕,並使其溶解於THF45mL。 在上述溶液中緩慢地滴下氯化乙醯基〔分子量: 78.50,d = 1.104,〇.64mL,9mmol〕。接著,當滴下三乙 基胺〔分子量:101.19,d = 0.726,1.5mL,10_8mmol, 1.2當量〕時,反應液會快速地變白濁,且可觀察到少許 發熱。持續攪拌2 0小時之後,加入水5 0m L使反應停止。 在反應混合液中加入THF5〇mL與二乙基醚1 OOmL且予以 震盪、靜置之後,分成水層與有機層。在水層中再加入二 乙基醚50mL且予以震盪、靜置之後,分成水層與有機層 。將此操作再重複進行2次。使所得之有機層以硫酸鎂乾 燥且過濾之後,餾去溶媒。將已去除溶媒之殘渣溶解於 THF60mL並滴入二乙基醚5 0 0 m L中,即得目的物之參( 3 -乙醯基膽酸)金剛烷-1,3,5 -三基參氧基甲基酯的白色固 體〔 4233mg,2.693mmol,單離產率 89_8%〕。 -38- 201040136 <物性數據> 熱重量/示差熱分析法(TG/DTA): Td5 = 24 9.8 °C 衰減全反射紅外線分光法(ATR-FTIR ) : 3 45 0.1,293 5 _0 ,2859.6 > 1725.5 , 1090.7 , 1034.1 核磁共振分光法(N M R ): h-NMRiO.SS^OWCsm) ,0.82(s,9H) - 0.93 (Example 2 (Synthesis of ginseng (3-ethylmercaptocholic acid) adamantane-1,3,5-trisyloxymethyl ester) In a 200 mL two-necked flask, it was placed in the international publication WO2007094784A. The obtained method was carried out to obtain adamantane tris, 1,3,5-trisyloxymethyl group (molecular weight: 1 44 5.98, 434 0 m g, 3 mmol), and dissolved in 45 mL of THF. The ethyl sulfonate group (molecular weight: 78.50, d = 1.104, 〇.64 mL, 9 mmol) was slowly added dropwise to the above solution. Next, when triethylamine (molecular weight: 101.19, d = 0.726, 1.5 mL, 10-8 mmol, 1.2 equivalent) was dropped, the reaction liquid quickly became cloudy, and a little heat was observed. After stirring for 20 hours, water was added at 50 ml to stop the reaction. After adding THF 5 〇 mL and diethyl ether 100 mL to the reaction mixture, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. This operation was repeated twice more. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The solvent-removed residue was dissolved in 60 mL of THF and dropped into diethyl ether 500 ml, to obtain the target (3-ethoxycholic acid) adamantane-1,3,5-tribasic ginseng. A white solid of oxymethyl ester [4233 mg, 2.693 mmol, isolated yield 89-8%]. -38- 201040136 <Physical data> Thermal weight/differential thermal analysis (TG/DTA): Td5 = 24 9.8 °C Attenuated total reflection infrared spectroscopy (ATR-FTIR): 3 45 0.1,293 5 _0 ,2859.6 > 1725.5 , 1090.7 , 1034.1 Nuclear Magnetic Resonance Spectroscopy (NMR): h-NMRiO.SS^OWCsm), 0.82(s,9H) - 0.93 (

s,9H) ,1.10 〜2.40(m,87H) - 2.50 ( s - 1Η ) ,3.19 (br-s,3H) ,3.3 3 ( br-s,3H ) ,3.6 2 ( b r-s,3 H ), 3.78 ( br-s,3 H ) ,4.09 ( m,6H ) ,4 · 6 5 ( m,3 H ), 5.22 ( s,6H )s,9H),1.10~2.40(m,87H) - 2.50 ( s - 1Η ) , 3.19 (br-s,3H) ,3.3 3 ( br-s,3H ) ,3.6 2 ( b rs,3 H ), 3.78 ( br-s,3 H ) ,4.09 ( m,6H ) ,4 · 6 5 ( m,3 H ), 5.22 ( s,6H )

13c -NMR : 10. 58 , 12.24 ,1 6.86 ,22.52 ,22 • 72, 26 • 13 26. 69 ’27. 20 ,2 8.43, 3 0. 35, 30. .50, 30. 80, 3 4. 30 34. 42 ,34_ 80 ,3 4.8 9, 3 5. 25, 36. .02, 4 1. 28, 4 1 . 47 45 . 50 > 45. 7 1 ,46.0 1 , 6 6. 19, 70. .39, 70. 9 5, 76. 57 86. 47, 1 72 • 64 ,174.89 〔化 3 4〕 實施例3 (參(3 - ( 1 -金剛烷基羰基)膽酸)金剛烷- 1,3,5-三基參氧基甲基酯的合成) 於 200mL 二口燒瓶中,置入國際公開公報 W02007094784A中記載之方法所合成而得之三膽酸 金 -39 - 201040136 剛烷-1,3,5-三基參氧基甲基〔分子量:1445.98,2895mg ,2mmol〕,並使其溶解於THF45mL。 在上述溶液中緩慢地滴下1 -金剛烷基羰基氯化物〔分 子量:198.69,1788mg,9mmol〕。接著,當滴下三乙基 胺〔分子量:101.19,d = 0.726 ’ 1.5mL,10.8mmol ’ 1.2eq〕時,反應液會快速地變白濁,且可觀察到少許發 熱。持續攪拌20小時之後,加入水50mL使反應停止。在 反應混合液中加入THF50mL與二乙基醚100mL且予以震 盪、靜置之後,分成水層與有機層。在水層中再加入二乙 基醚50mL且予以震盪、靜置之後,分成水層與有機層。 將此操作再重複進行2次。使所得之有機層以硫酸鎂乾燥 且過濾之後,餾去溶媒。將已去除溶媒之殘渣溶解於 THF60mL,且滴入二乙基醚 5 00mL中即可得目的物之參 (3- ( 1-金剛烷基羰基)膽酸) 金剛烷-1,3,5-三基參氧 基甲基酯的白色固體〔2 3 89mg,l.24mmol,單離產率 6 1.8%〕。 <物性數據> 熱重量/示差熱分析法(TG/DTA): Td5 = 270.5 °C 衰減全反射紅外線分光法(A T R - F T IR ) : 3 4 6 0.1,2 9 3 5.6 ,2870.6 , 1727.2 , 1090.7 , 1033.9 -40 - 201040136 〔化 3 5〕13c-NMR: 10.58, 12.24,1 6.86, 22.52, 22 • 72, 26 • 13 26. 69 '27. 20 , 2 8.43, 3 0. 35, 30. .50, 30. 80, 3 4. 30 34. 42 , 34_ 80 , 3 4.8 9, 3 5. 25, 36. .02, 4 1. 28, 4 1 . 47 45 . 50 > 45. 7 1 , 46.0 1 , 6 6. 19, 70 .39, 70. 9 5, 76. 57 86. 47, 1 72 • 64 , 174.89 [Chem. 3 4] Example 3 (Ref. (3 - (Adamantylcarbonyl) cholic acid) adamantane - 1 Synthesis of 3,5-trisyloxymethyl ester) The tricholic acid-39-201040136-cyclohexane-1 was synthesized by a method described in International Publication WO0094094784A in a 200 mL two-necked flask. 3,5-Trisyloxymethyl group [molecular weight: 1454.98, 2895 mg, 2 mmol), and dissolved in 45 mL of THF. 1 -adamantylcarbonyl chloride was slowly dropped in the above solution [molecular weight: 198.69, 1788 mg, 9 mmol]. Then, when triethylamine (molecular weight: 101.19, d = 0.726 '1.5 mL, 10.8 mmol' 1.2 eq) was added dropwise, the reaction liquid became cloudy quickly, and a little heat was observed. After stirring continuously for 20 hours, 50 mL of water was added to stop the reaction. After adding 50 mL of THF and 100 mL of diethyl ether to the reaction mixture, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. This operation was repeated twice more. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The solvent-removed residue was dissolved in 60 mL of THF, and the mixture was added dropwise to 500 mL of diethyl ether to obtain the target (3-(1-adamantylcarbonyl)cholate)adamantan-1,3,5- Trisyloxymethyl ester as a white solid [2 3 89 mg, 1.24 mmol, mp. <Physical data> Thermal weight/differential thermal analysis (TG/DTA): Td5 = 270.5 °C Attenuated total reflection infrared spectroscopy (ATR - FT IR ) : 3 4 6 0.1, 2 9 3 5.6 , 2870.6 , 1727.2 , 1090.7, 1033.9 -40 - 201040136 〔化3 5〕

實施例4(參(3-環己基羰基膽酸)金剛烷-1,3,5-三基參 氧基甲基酯的合成) 〇 於 200mL 二口燒瓶中,置入國際公開公報 W〇2〇07〇9478 4A中記載之方法所合成而得之三膽酸 金 剛烷-1,3,5 -三基參氧基甲基〔分子量:1445.98,29〇4mg ,2mmol〕,並使其溶解於THF4 5 mL。 在上述溶液中緩慢地滴下環己基羰基氯化物〔分子量 :146.61 ’ d = 1.096,1.2mL,9m mol〕。接著,當滴下三 乙基胺〔分子量:101.19,d = 0.726,1.5mL,10.8mmol ’ 1 .2當量〕時,反應液會快速地變白濁,且可觀察到少 Ο 許發熱。持續攪拌2 0小時之後,加入水5 0m L使反應停止 。在反應混合液中加入THF50mL與二乙基醚1 〇〇mL且予 以震盪、靜置之後’分成水層與有機層。在水層中再加入 二乙基醚50m L且予以震盪、靜置之後,分成水層與有機 層。將此操作再重複進行2次。使所得之有機層以硫酸鎂 乾燥且過濾之後’餾去溶媒。將已去除溶媒之殘渣溶解於 THF60mL,且滴入二乙基醚5 00mL中即可得目的物之參 (3 -環己基羰基膽酸)金剛烷-1,3,5 -三基參氧基甲基酯 的白色固體〔 2200mg,i_24mmol,單離產率61.7%〕。 -41 - 201040136 <物性數據> 熱重量/示差熱分析法(TG / DTA) : Td5= 165.3°C 衰減全反射紅外線分光法(ATR-FTIR ) : 3425.4,293 5.8 ,2868.3 , 1713.0 > 1091.7 > 1034.1 〔化 3 6〕Example 4 (Synthesis of ginseng (3-cyclohexylcarbonylcholic acid) adamantane-1,3,5-triyloxymethyl ester) 〇In a 200 mL two-necked flask, placed in International Publication W〇2三07〇9478 4A synthesized by the method described in the synthesis of adamantane-1,3,5-trisyloxymethyl group (molecular weight: 1445.98, 29〇4 mg, 2 mmol), and dissolved in THF4 5 mL. The cyclohexylcarbonyl chloride [molecular weight: 146.01' d = 1.096, 1.2 mL, 9 m mol) was slowly dropped in the above solution. Next, when triethylamine (molecular weight: 101.19, d = 0.726, 1.5 mL, 10.8 mmol' 1.2 equivalent) was dropped, the reaction liquid quickly became cloudy, and less heat was observed. After stirring for 20 hours, water was added at 50 m to stop the reaction. After adding 50 mL of THF and 1 mL of diethyl ether to the reaction mixture, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 m of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. This operation was repeated twice more. The resulting organic layer was dried over magnesium sulfate and filtered to remove solvent. The solvent-removed residue was dissolved in 60 mL of THF, and the mixture was added dropwise to 500 mL of diethyl ether to obtain the target (3-cyclohexylcarbonylcholic acid) adamantane-1,3,5-trienyloxy The white solid of the methyl ester [2200 mg, i_24 mmol, isolated yield 61.7%]. -41 - 201040136 <Physical data> Thermal weight/differential thermal analysis (TG / DTA) : Td5 = 165.3 °C Attenuated total reflection infrared spectroscopy (ATR-FTIR) : 3425.4, 293 5.8 , 2868.3 , 1713.0 > 1091.7 > 1034.1 [Chem. 3 6]

實施例5 (三去氧膽酸 金剛烷-1,3,5-三基參氧基甲基酯 的合成) 於 5〇mL 二口燒瓶中,置入國際公開公報 W〇2〇07094784A中記載之方法所合成而得之—參(甲 基硫代甲氧基)金剛院〔分子量:364.59,1823mg, 5mmol〕,緩慢地滴下氯化硫醯基〔分子量:ι ι 8.97, 1 _2mL,1 6.5mmol〕之後攪拌2小時。將殘留的氯化硫醯 基以真空栗浦予以去除。 將溶解於 THFlOmL中的去氧膽酸〔分子量:392.57 ’ 58 8 9mg,1 5mmol,1.0 當量〕使用套管(cannula )進行 滴下’再洗入THF5mL2次。接著,當滴下三乙基胺〔分 子量:101.19,d=0.726,2.3mL,16.5mmol,1.1 當量〕 時’反應液會快速地變白濁,且可觀察到少許發熱。持續 攪拌2 0小時之後,加入水ι 〇 〇 m l使反應停止。在反應混 -42- 201040136 合液中加入 THFlOOmL與二乙基醚200mL且予以震盪、 靜置之後,分成水層與有機層。在水層中再加入二乙基醚 50mL且予以震盪、靜置之後,分成水層與有機層。將此 操作再重複進行2次。使所得之有機層以硫酸鎂乾燥且過 濾之後,餾去溶媒。將已去除溶媒之殘渣溶解於TH F 3 0m L ,且滴入二乙基醚750mL中而得目的物之三去氧膽酸 金 剛烷-1,3,5-三基參氧基甲基酯的白色固體〔3 93 9mg, 2.82mmol,單離產率 56.4%〕。 <物性數據> 熱重量/示差熱分析法(TG/DTA): Td5=122.7°C 衰減全反射紅外線分光法(ATR-FTIR) : 3423.8 ’ 293 3.3 ,2863.0, 1709.6 > 1090.1, 1033.0 > 1017.3 〔化 3 7〕Example 5 (Synthesis of adamantane-1,3,5-trisyloxymethyl ester) The 5 mL mL two-necked flask was placed in International Publication No. WO 〇 〇 07094784A. The method was synthesized by the method - ginseng (methylthiomethoxy) Jingangyuan (molecular weight: 364.59, 1823 mg, 5 mmol), and slowly dropping thiosulfanyl chloride [molecular weight: ι 8.8.97, 1 _2 mL, 1 6.5 After stirring for 2 hours. The residual sulfonium chloride is removed by vacuum pumping. Deoxycholic acid (molecular weight: 392.57 '58 8 9 mg, 15 mmol, 1.0 equivalent) dissolved in THF 10 mL was dripped with a cannula and washed again with THF 5 mL twice. Next, when triethylamine was dropped (molecular weight: 101.19, d = 0.726, 2.3 mL, 16.5 mmol, 1.1 equivalent), the reaction liquid quickly became cloudy, and a little heat was observed. After stirring for 20 hours, water ι 〇 m l was added to stop the reaction. After adding THF 100 mL and diethyl ether 200 mL to the reaction mixture - 42 - 201040136, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. This operation was repeated twice more. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The solvent-removed residue was dissolved in TH F 3 0 m L and dropped into 750 mL of diethyl ether to obtain the desired product, adamantane-1,3,5-trisyloxymethyl ester. White solid [3 93 9 mg, 2.82 mmol, 56.4% yield. <Physical data> Thermal weight/differential thermal analysis (TG/DTA): Td5 = 122.7 °C Attenuated total reflection infrared spectroscopy (ATR-FTIR): 3423.8 '293 3.3, 2863.0, 1709.6 > 1090.1, 1033.0 &gt 1017.3 〔化3 7〕

實施例6 (三熊去氧膽酸(Ursodeoxycholic acid)金剛院-1,3,5-三基參氧基甲基酯的合成) 於 5〇mL 二口燒瓶中,置入國際公開公報 W02007094784A中記載之方法所合成而得之I,3,5-參(甲 基硫代甲氧基)金剛烷〔分子量:3 64.5 9,1 823mg, 5mmol ],緩慢地滴下氯化硫醯基〔分子量:1 1 8 _ 97, -43- 201040136 1 · 2 m L,1 6.5 m m ο 1〕之後搜伴2小時。將殘留的氛化硫釀 基以真空泵浦予以去除。將溶解於THFlOmL中之熊去氧 膽酸(Ursodeoxycholic acid)〔分子量·· 392.57,5889mg ,:15mmol,1.0當量〕使用套管(cannula)進行滴下,再 洗入 THF5mL2次。接著,當滴下三乙基胺〔分子量: 101.19,d= 0.726,2.3mL,16.5mmol,1.1 當量〕時,反 應液會快速地變白濁,且可觀察到少許發熱。持續攪拌2 0 小時之後,加入水1 OOmL使反應停止。在反應混合液中加 入THFlOOmL與二乙基醚200mL且予以震盪、靜置之後 ,分成水層與有機層。在水層中再加入二乙基醚50mL且 予以震盪、靜置之後,分成水層與有機層。將此操作再重 複進行2次。使所得之有機層以硫酸鎂乾燥且過濾之後, 餾去溶媒。將已去除溶媒之殘渣溶解於THF2 5 mL,且滴入 二乙基醚800mL中而得目的物之三去氧膽酸 金剛院-1,3,5-三基參氧基甲基酯的白色固體〔523〇1^,3.74111111〇1 ,單離產率7 4 _ 8 %〕。 <物性數據> 熱重量/示差熱分析法(TG/DTA): Td5 = 118.6 °C 衰減全反射紅外線分光法(A T R - F TIR ) : 3 4 2 3.8,2 9 3 2.0 ’ 2864.7’ 1709.1 , 1092.6, 1013.6 -44- 201040136 〔化 3 8〕Example 6 (Synthesis of Ursodeoxycholic acid - 1 ,3,5-trisyloxymethyl ester) was placed in a 5 〇 mL two-necked flask in International Publication WO 02007094784A I,3,5-parade (methylthiomethoxy)adamantane synthesized by the method described (molecular weight: 3 64.5 9,1 823 mg, 5 mmol), slowly dropping thiosulfanyl chloride [molecular weight: 1 1 8 _ 97, -43- 201040136 1 · 2 m L, 1 6.5 mm ο 1〕 After 2 hours of search. The residual sulfurized sulfur base was removed by vacuum pumping. Ursodeoxycholic acid (molecular weight · 392.57, 5889 mg, 15 mmol, 1.0 equivalent) dissolved in THF 10 mL was dropped using a cannula, and washed with THF 5 mL twice. Next, when triethylamine [molecular weight: 101.19, d = 0.726, 2.3 mL, 16.5 mmol, 1.1 equivalent) was dropped, the reaction solution quickly became cloudy, and a little heat was observed. After stirring for 20 hours, 100 mL of water was added to stop the reaction. To the reaction mixture, THF 100 mL and diethyl ether (200 mL) were added, shaken, and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 50 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. Repeat this operation twice more. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The solvent-removed residue was dissolved in 5 mL of THF 2 and added dropwise to 800 mL of diethyl ether to obtain white of the target product: dimethylglycolate -1,3,5-trisyloxymethyl ester. Solid [523〇1^, 3.74111111〇1, isolated yield 7 4 _ 8 %]. <Physical data> Thermal weight/differential thermal analysis (TG/DTA): Td5 = 118.6 °C Attenuated total reflection infrared spectroscopy (ATR - F TIR ) : 3 4 2 3.8, 2 9 3 2.0 ' 2864.7' 1709.1 , 1092.6, 1013.6 -44- 201040136 〔化3 8〕

實施例7(參(3-(氧基甲氧基-2,6-降冰片烷羧內酯羰基 )膽酸)金剛烷-1,3,5-三基參氧基甲基酯的合成) 0 於附有攪拌器、溫度計及氯化氫氣體導入用導入嘴之 2L的3 口燒瓶中,置入3 -羥基-2,6 -降冰片烷羧內酯〔分 子量:154.16,1.297mol,200g〕、三聚甲醒〔分子量: 30.03,1.687mol,50.64g〕、硫酸鎂〔分子量:120.37, 1.297mmol,1 5 6 · 1 g〕及二氯甲烷 1 , 3 OOmL,邊保持於 〇 °C 邊進行攪拌。將混合氯化鈉1,070g與濃硫酸9〇〇mL所產 生之氯化氫氣體通過導入嘴吹入二氯甲烷溶液中5小時。 經3小時攪拌後,進行反應液之GC_MS分析的結果,可 Q 確認獲得3_羥基_2,6·降冰片烷羧內酯已完全轉化,且以選 擇率9 6 %得到3 -氯甲氧基-2,6 -降冰片烷羧內酯。 <物性數據> 氣體層析-質量分析(GC-MS): 204 ( M+ ( 37C1 ) ,1 .83% ) ,202 ( M + ( 35C1 ) ,5.39% )> 174 ( 9.29% ) ,16 7 ( 4.01%) ,144 ( 1 5. Π % ) ,138 (25.31% ) ,119 ( 13.04% ) - 1 05 ( 1 00% ) 5 80 ( 60.96%) ,6 6 ( 44.62% ) ,5 5 ( 1 6.02%) -45- 201040136 〔化 3 9〕Example 7 (Synthesis of (3-(oxymethoxy-2,6-norbornanecarboxylactone)cholic acid) adamantane-1,3,5-triyloxymethyl ester) 0 In a 2-liter 3-neck flask equipped with a stirrer, a thermometer, and a hydrogen chloride gas introduction nozzle, 3-hydroxy-2,6-norbornanecarboxylactone (molecular weight: 154.16, 1.297 mol, 200 g) was placed. Trimerization (molecular weight: 30.03, 1.687 mol, 50.64 g), magnesium sulfate (molecular weight: 120.37, 1.297 mmol, 1 5 6 · 1 g) and dichloromethane 1,300 mL, while maintaining at 〇 ° C Stir. Hydrogen chloride gas generated by mixing 1,070 g of sodium chloride and 9 〇〇mL of concentrated sulfuric acid was blown into the dichloromethane solution through the introduction nozzle for 5 hours. After stirring for 3 hours, the result of GC_MS analysis of the reaction liquid was confirmed by Q to obtain that 3-hydroxy-2,6·norbornanecarboxyl lactone was completely converted, and 3-chloromethoxy was obtained at a selectivity of 96%. Base-2,6-norbornanecarboxylactone. <Physical data> Gas chromatography-mass analysis (GC-MS): 204 (M+ (37C1), 1.83%), 202 (M + (35C1), 5.39%) > 174 (9.29%), 16 7 ( 4.01%) , 144 ( 1 5. Π % ) , 138 ( 25.31% ) , 119 ( 13.04% ) - 1 05 ( 1 00% ) 5 80 ( 60.96% ) , 6 6 ( 44.62% ) , 5 5 ( 1 6.02%) -45- 201040136 〔化3 9〕

於 5 OmL二口燒瓶中’置入以國際公開公報 W02007094784A中記載之方法所合成而得之三膽酸 金 剛烷-1,3,5 -三基參氧基甲基酯〔分子量:1445.98, lOOOmg > 0.69mmol〕與如上述實施所合成之3 -氯甲氧基-2,6-降冰片院殘內醋〔分子量:202.63,558111§, 2.48mmol,1_2當量〕’且使其溶解於THFlOmL。接著, 當滴下三乙基胺〔分子量:101.19,d=0.726,0.4mL, 3.lmmol,1.25當量〕時,反應液會快速地變白濁,且可 觀察到少許發熱。持續攪拌20小時之後,加入水50mL使 反應停止。在反應混合液中加入THF30mL與二乙基醚 100mL且予以震盪、靜置之後’分成水層與有機層。在水 層中再加入二乙基醚5 OmL且予以震盪、靜置之後,分成 水層與有機層。將此操作再重複進行2次。使所得之有機 層以硫酸鎂乾燥且過濾之後,餾去溶媒。將去除溶媒後的 殘渣溶解於THF2 0mL中’滴入二乙基醚400mL而得目的 物之參(3-(氧基甲氧基-2,6-降冰片烷羧內酯羰基)膽酸 )金剛院-1,3,5 -二基參氧基甲基醋的白色固體〔1〇48mg, 0_54mmol,單離產率 78.2%〕。 <物性數據>Into a 5 OmL two-necked flask, the amantadine-1,3,5-trisyloxymethyl ester (molecular weight: 1445.98, 1000 mg) synthesized by the method described in International Publication No. WO2007094784A was placed. > 0.69 mmol] and 3 -chloromethoxy-2,6-norbornol vinegar (molecular weight: 202.63, 558111 §, 2.48 mmol, 1_2 equivalent) synthesized as described above and dissolved in THF lOmL . Next, when triethylamine (molecular weight: 101.19, d = 0.726, 0.4 mL, 3.lmmol, 1.25 equivalent) was dropped, the reaction liquid quickly became cloudy, and a little heat was observed. After continuously stirring for 20 hours, 50 mL of water was added to stop the reaction. After adding 30 mL of THF and 100 mL of diethyl ether to the reaction mixture, the mixture was shaken and allowed to stand, and then separated into an aqueous layer and an organic layer. Further, 5 mL of diethyl ether was added to the aqueous layer, and after shaking and standing, it was separated into an aqueous layer and an organic layer. This operation was repeated twice more. After the obtained organic layer was dried over magnesium sulfate and filtered, solvent was evaporated. The residue after removal of the solvent was dissolved in THF 2 mL, and 400 mL of diethyl ether was added dropwise to obtain a target (3-(oxymethoxy-2,6-norbornanecarboxylactone)cholate). The white solid of the genus-1,3,5-di-glycoloxymethyl vinegar [1〇48 mg, 0-54 mmol, 78.2% yield). <Physical data>

熱重量/示差熱分析法(TG/DTA) : Td5 = 243.3 °C -46- 201040136 衰減全反射紅外線分光法(ATR_FTIR) : 3455·1,2937.0 2869.3 , 1780.9 , 1709.1 , 1089.5 , 1037.4Thermal Weight / Differential Thermal Analysis (TG/DTA) : Td5 = 243.3 °C -46- 201040136 Attenuated Total Reflection Infrared Spectrometry (ATR_FTIR): 3455·1, 2937.0 2869.3, 1780.9, 1709.1, 1089.5, 1037.4

^ 實施例8 (組成物的調製) 相對於實施例1所得之脂環式化合物1 00質量份而言 ,添加5質量份之九氟丁烷磺酸三苯基鏑鹽作爲光酸產生 劑,以環己酮溶解使此等成爲5質量%來調製組成物。在 經六甲基二矽氮烷(HMD S )處理之矽晶圓上,塗佈所調 製之組成物,於1 1 〇 t進行烘烤6 0秒鐘,形成了光阻膜。 將如此所得之晶圓以經水稀釋之氫氧化四甲基銨(TMAH )水溶液(2.3 8質量%)進行顯像3 0秒鐘。將此時膜厚Example 8 (Preparation of a composition) With respect to 100 parts by mass of the alicyclic compound obtained in Example 1, 5 parts by mass of a triphenylsulfonium nonafluorobutanesulfonate was added as a photoacid generator. The composition was prepared by dissolving with cyclohexanone to make these 5% by mass. The composition was coated on a ruthenium hexamethyldioxane (HMD S )-treated wafer and baked at 110 ° for 60 seconds to form a photoresist film. The wafer thus obtained was subjected to development with a water-diluted aqueous solution of tetramethylammonium hydroxide (TMAH) (2.38 mass%) for 30 seconds. Film thickness at this time

G 對TMAH濃度之變化顯示於第1表及圖1。 實施例9〜1 4 (組成物的調製) 各自使用實施例2〜7所得之脂環式化合物來取代實 施例1所得之脂環式化合物調製組成物,除了將已調製之 組成物塗佈於未處理之矽晶圓或經HMD S處理之矽晶圓上 之外,其餘係與實施例8同樣地實施,以形成光阻膜並予 以顯像。將此時膜厚對T M A Η濃度之變化顯示於第1表及 圖1。 -47- 201040136 比較例1 (比較組成物的調製) 實施例8中,使用下述式所示之化合物GR-5來取代 實施例1所得之脂環式化合物,且使用乳酸乙基酯來取代 環己酮以調製比較組成物,除了將已調製之比較組成物塗 佈於未處理的矽晶圓上外,其餘係與實施例8同樣地實施 ,以形成光阻膜並予以顯像。將此時膜厚對TMAH濃度之 變化顯示於第1表及圖1。 〔化 4 1〕The change in G concentration for TMAH is shown in Table 1 and Figure 1. Example 9 to 14 (Preparation of composition) The alicyclic compound obtained in Example 1 was used in place of the alicyclic compound obtained in Example 1, except that the prepared composition was applied to The same procedure as in Example 8 was carried out except that the untreated ruthenium wafer or the HMD S-treated ruthenium wafer was used to form a photoresist film and develop the image. The change in film thickness to the T M A Η concentration at this time is shown in Table 1 and Figure 1. -47-201040136 Comparative Example 1 (Preparation of Comparative Composition) In Example 8, the compound alicyclic compound represented by the following formula was used instead of the alicyclic compound obtained in Example 1, and replaced with ethyl lactate. The cyclohexanone was prepared in the same manner as in Example 8 except that the comparative composition was applied to an untreated tantalum wafer to form a photoresist film and developed. The change in film thickness to TMAH concentration at this time is shown in Table 1 and Figure 1. 〔化 4 1〕

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S ο ο ο ο ο ο ο 【ift s (I) i 丨(實施例2) i (實施例3) i (實施例4) 1 (實施例5) :(實施例6) (實施例7) 實施例9 1 實施例10 實施例11 實施例12 實施例13 : 實施例14 : i— so 瑶您爸《Μ ν (ί 震)is :(實施例2) (實施例3) (實施例4) :(實施例5) (實施例6) (實施例7) 實施例9 實施例10 : 實施例11 ! 實施例12 ! 實施例13 實施例14 so I ι fi—qq -49 - 201040136 如此可確認,使用本發明之實施例8〜1 4調製的組成 物所形成之光阻膜,與使用比較例1調製的比較組成物所 形成之光阻膜比較之下,即使在更高濃度的TMAH溶液中 ,仍可維持膜厚。特別是使用實施例1〜3及7調製的組 成物所形成之光阻膜,即使在TMAH標準濃度(2.38質量 %)中,仍可維持膜厚。 〔產業上之可利用性〕 如以上所詳述,本發明之脂環式化合物係有用於正型 光阻組成物用途。 【圖式簡單說明】 〔圖1〕將實施例7〜1 2及比較例1所形成之光阻膜 中的溶解抑制效果予以比較之圖。 -50-S ο ο ο ο ο ο ο [ift s (I) i 丨 (Embodiment 2) i (Embodiment 3) i (Embodiment 4) 1 (Embodiment 5): (Embodiment 6) (Embodiment 7) Embodiment 9 1 Embodiment 10 Embodiment 11 Embodiment 12 Embodiment 13: Embodiment 14: i-so Yao Your father "Μ ν (ί 震) is : (Example 2) (Example 3) (Example 4 : (Embodiment 5) (Embodiment 6) (Embodiment 7) Embodiment 9 Embodiment 10: Embodiment 11 ! Embodiment 12 ! Embodiment 13 Example 14 so I ι fi - qq -49 - 201040136 It was confirmed that the photoresist film formed by using the composition prepared in Examples 8 to 14 of the present invention was compared with the photoresist film formed by using the comparative composition prepared in Comparative Example 1, even at a higher concentration of TMAH. The film thickness can still be maintained in the solution. In particular, the photoresist film formed using the compositions prepared in Examples 1 to 3 and 7 can maintain the film thickness even in the standard concentration of TMAH (2.38 mass%). [Industrial Applicability] As described in detail above, the alicyclic compound of the present invention is used for a positive resist composition. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A comparison of the dissolution suppressing effects in the resist films formed in Examples 7 to 12 and Comparative Example 1. -50-

Claims (1)

201040136 七、申請專利範圍: 1 · 一種下述以一般式(丨)所示之脂環式化合物 〔化1〕 (式中,Ral〜Ra3係各自獨立地爲下述以一般式(a )所 示之含膽酸類酯構造之基) Ο 〔化 2〕201040136 VII. Patent application scope: 1 · An alicyclic compound represented by the general formula (丨1) (in the formula, Ral~Ra3 are each independently the following general formula (a) The basis of the structure containing the bile acid ester) Ο [Chemical 2] (式中’ Rb表示羥基或下述以—般式(bl)〜(b5)之任 —所示的碳數2〜30之含氧有機基;^及Rd係各自獨立 地表示氫原子、羥基或下述以—般式(bl)〜(b5)之任 一所不的碳數2〜30之含氧有機基;^及Rf係各自獨立 〇 地表示氫原子、或是可具有雜原子之碳數1〜10的直鏈狀 、分支狀或環狀之煙基;η表示1或2; A表示單鍵或碳 數1〜5之—價的烴基;惟’ Rb、Re及Rd係無3個同時爲 羥基的情況) 〔化3〕 21 又 〇A (b1) (式中’ Z1表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基) 201040136(wherein Rb represents a hydroxyl group or an oxygen-containing organic group having 2 to 30 carbon atoms represented by the following formula (b1) to (b5); and the Rd and the independently represent each independently represent a hydrogen atom or a hydroxyl group. Or an oxygen-containing organic group having 2 to 30 carbon atoms which are not in any of the general formulas (b1) to (b5); and the Rf groups each independently represent a hydrogen atom or may have a hetero atom. a linear, branched or cyclic group of cigarettes having a carbon number of 1 to 10; η represents 1 or 2; A represents a single bond or a hydrocarbon group having a carbon number of 1 to 5; but 'Rb, Re and Rd are not When three are simultaneously hydroxyl groups) [Chemical 3] 21 Further 〇A (b1) (wherein Z1 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 of a hetero atom) 201040136 ,〇Y0v (b2) Ο (式中’ ζ2表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基) 〔化5〕 (b3) (式中,z3表示可具有雜原子之碳數1〜9的直鏈狀、分 支狀或環狀之烴基;Rg及Rh係各自獨立地表示氫原子或 是可具有雜原子之碳數1〜10的直鏈狀、分支狀或環狀之 烴基), 〇Y0v (b2) Ο (wherein ζ2 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 15 of a hetero atom) [Chemical 5] (b3) (wherein z3 represents a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 9 of a hetero atom; Rg and Rh each independently represent a hydrogen atom or a linear or branched carbon number of 1 to 10 which may have a hetero atom Hydrocarbon group (b 4) (式中,Z4表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基)(b 4) (wherein Z4 represents a linear, branched or cyclic hydrocarbon group having 1 to 15 carbon atoms which may have a hetero atom) (b 5) (式中,Z5〜Z7係各自獨立地表示可具有雜原子之碳數1 〜1 0的直鏈狀、分支狀或環狀之烴基)。 2. 如請求項1之脂環式化合物,其中,前述一般式 (a)中之Re及。爲氫原子,且A爲單鍵。 3. 如請求項1或2之脂環式化合物,其中,前述一 -52- 201040136 般式(a)中之η爲1,而Re及Rd各自獨立地爲氫原子或 羥基。 4. 如請求項1〜3中任一項之脂環式化合物,其中, 前述一般式(a)中之1^係前述以一般式(bl)所示之含 氧有機基,而Re及Rd爲羥基。 5. 如請求項1〜3中任一項之脂環式化合物,其中, 前述一般式(a)中之以爲羥基。 0 6. 一種請求項1、2、3或5之脂環式化合物的製造 方法,其特徵係,使下述以一般式(c 1 )〜(c4 )之任一 所示的膽酸類與自1,3,5-參(乙烯氧基)金剛烷、1,3,5-參(鹵代甲氧基)金剛烷、1,3,5 -參(乙烯氧基甲基)金 剛烷及1,3,5-參(甲基硫代甲氧基)金剛烷所選出之1種 以上反應,(b 5) (wherein, Z5 to Z7 each independently represent a linear, branched or cyclic hydrocarbon group having a carbon number of 1 to 10 which is a hetero atom). 2. The alicyclic compound of claim 1, wherein Re and the above general formula (a). It is a hydrogen atom and A is a single bond. 3. The alicyclic compound of claim 1 or 2, wherein η in the above formula (a) is 1 and Re and Rd are each independently a hydrogen atom or a hydroxyl group. 4. The alicyclic compound according to any one of claims 1 to 3, wherein the above-mentioned general formula (a) is an oxygen-containing organic group represented by the general formula (bl), and Re and Rd It is a hydroxyl group. 5. The alicyclic compound according to any one of claims 1 to 3, wherein the general formula (a) is a hydroxyl group. A method for producing an alicyclic compound of claim 1, 2, 3 or 5, characterized in that the following bile acids are represented by any one of the general formulas (c1) to (c4) 1,3,5-glycol (ethyleneoxy) adamantane, 1,3,5-glycol(halomethoxy)adamantane, 1,3,5-gin(vinyloxymethyl)adamantane and 1 One or more reactions selected from 3,5-parade (methylthiomethoxy)adamantane, 53- 201040136 7. —種請求項1〜6中任一項之脂環式化合物的製造 方法,其特徵係,使下述以一般式(1-1)所不之脂環式 化合物與下述以一般式(dl)〜(d5)之任一所示之含氧 有機化合物的1種以上反應’ 〔化9〕 (式中,Ra 4〜Ra6各自獨立地爲下述以一般式(a-1)所示 之含膽酸類酯構造之基) 〔化 1 〇〕The method for producing an alicyclic compound according to any one of claims 1 to 6, which is characterized in that the following alicyclic compound which is not represented by the general formula (1-1) and the following One or more kinds of reactions of the oxygen-containing organic compound represented by any one of the general formulas (d1) to (d5)' (in the formula, Ra 4 to Ra6 are each independently the following general formula (a-). 1) The base of the bile-containing ester structure shown) (Chemical 1 〇) (式中,Rh及R'各自獨立地爲氫原子或羥基) 〔化1 &quot; (式中’ Z1表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之煙基;X表示鹵素原子) 〔化 1 2〕(wherein, Rh and R' are each independently a hydrogen atom or a hydroxyl group) [Chemical Formula 1 &quot; (wherein Z1 represents a linear, branched or cyclical smoke having a carbon number of 1 to 15 which may have a hetero atom) Base; X represents a halogen atom) [Chemical 1 2] (式中,Z2表示可具有雜原子之碳數1〜15的直鏈狀、分 支狀或環狀之烴基) -54- 201040136 〔化 1 3〕 (d3) (式中’ z3表示可具有雜原子之碳數 支狀或環狀之烴基;Rg及Rh各自獨工 可具有雜原子之碳數1〜1〇的直鏈狀、 基;X表示鹵素原子) 〔化 1 4〕 ^°Y^X (d4) Ο (式中,ζ4表示可具有雜原子之碳數1 支狀或環狀之烴基;X表示鹵素原子) 〔化 1 5〕 Z”i—X (d5) (式中,Ζ5〜Ζ7各自獨立地表示可具, 1 0的直鏈狀、分支狀或環狀之烴基;χ 8.如請求項7之脂環式化合物$ 前述一般式(1-1 )中之Ra4〜Ra6係丁 所示之含膽酸類酯構造之基’ 〔化 1 6〕 1〜9的直鏈狀、分 :地表示氫原子或是 分支狀或環狀之烴 〜1 5的直鏈狀、分 :雜原子之碳數1〜 表示鹵素原子)。 製造方法,其中, 述以' —般式(a-2)(wherein Z2 represents a linear, branched or cyclic hydrocarbon group which may have a carbon number of 1 to 15 of a hetero atom) -54 - 201040136 [Chemical Formula 1] (d3) (wherein z3 represents a miscellaneous a hydrocarbon group having a carbon number of a ring or a ring; Rg and Rh each independently may have a linear or basic group having a carbon number of 1 to 1 Å of a hetero atom; X represents a halogen atom) [Chemical 1 4] ^°Y^ X (d4) Ο (wherein ζ4 represents a hydrocarbon group having a carbon number of 1 or a ring of a hetero atom; X represents a halogen atom) [Chemical 1 5] Z"i-X (d5) (wherein Ζ5 ~7 each independently represents a linear, branched or cyclic hydrocarbon group which may have 10; χ 8. The alicyclic compound of claim 7 is Ra4 to Ra6 in the above general formula (1-1) The base of the bile acid ester-containing structure represented by the butyl group is a linear or sub-group of a hydrogen atom or a branched or cyclic hydrocarbon of ~1 5 . : the carbon number of the hetero atom is 1 to represent a halogen atom). The manufacturing method, wherein, the general formula (a-2) 9. 一種組成物’其特徵係含有§靑 -55- 項 1〜5中任一項 201040136 之脂環式化合物。 10. 如請求項9之組成物,其係進一步含有溶媒及酸 產生劑。 11. 如請求項9或1 0之組成物,其係進一步含有消 化體(quencher)。 1 2 ·如請求項9〜1 1中任一項之組成物,其係正型光 阻組成物。 1 3 · —種光阻圖型之形成方法,其係含有:使用請求 項9〜1 2中任一項之組成物作爲正型光阻而於支持體上形 成光阻膜之步驟、使該光阻膜進行曝光之步驟、使該光阻 膜進行鹼顯像而形成光阻圖型之步驟。 -56 -9. A composition </ RTI> characterized by an alicyclic compound of any one of § 靑 -55- Item 1 to 5, 201040136. 10. The composition of claim 9 further comprising a solvent and an acid generator. 11. The composition of claim 9 or 10, further comprising a quencher. The composition of any one of claims 9 to 1 which is a positive resistive composition. And a method for forming a photoresist pattern, comprising: forming a photoresist film on a support by using the composition of any one of claims 9 to 12 as a positive photoresist; The step of exposing the photoresist film, and performing the alkali development on the photoresist film to form a photoresist pattern. -56 -
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