201037330 HM-2008-0109-TW 30364twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種微粒檢測方法及其裝置，且特另】 是有關於一種在晶片上檢測微粒之方法及其裝置。 【先前技術】 隨著消費性電子產品的發展，對於電子產品尺寸 〇 求越來越嚴格。導因於半導體製程的進步，晶片尺寸可= 達到奈米(nano-meter)等級。然而，隨著晶片尺寸越小以2 製私越精密，製程中所產生的微粒(particle)將會影響到 子產品良率以及電路特性。因此，在製程過程當中T必 將存有微粒之電路檢測出來。 <、 圖1為檢測晶片上微粒之示意圖。請參照圖^，在一 般的微粒檢測方法中，通常會施加電壓於晶片上其— L1並量測相鄰之引腳L2上的電壓，來得知引腳u ❹=L2之間的電阻性阻抗，進而判斷兩引腳之間是否存在 微粒。但是，實際上微粒不一定會與兩引腳接觸而呈現電 阻性阻抗，也有可能形成非接觸性的電容性阻抗。 圖2為另-檢測晶片上微粒之示意圖。請參照圖2， 在此微粒檢測方法中，經由施加電壓於其-引腳u且旦 測相鄰之引腳L2上電壓隨時間變化的速度大小，可以二 斷是否有微粒存在。然而，微粒所形成之電容性阻抗可能 Ϊ二2有正負極性之分。當所施加之電壓‘ 付a引腳U或L2之極性時’便會量測不到微粒所形成之 201037330 HM-2008-0109-TW 30364twf.doc/n =谷性阻抗。另外，在晶片内部引腳也可能耦接具極性之 電子元件，例如：保護二極體以作靜電防護之用。當所施 加之電壓使電子元件作動而漏電時，也會量測不到微粒所 开7成之電谷性阻抗。因此，單向量測電容性阻抗容易造成 檢測微粒失誤。 另一方面，為了檢測晶片上的微粒，通常會參考一臨 ^值與相鄰⑽L2上電壓進行比較。也就是說，經由判 又電阻) 生阻抗或電容性阻抗影響所量測到的電壓是否超 ，,可以得知是否存在微粒。'然而，臨界值的設定 木而i的不同而因應改變，甚至在相同製程下受晶 =不同電路之元件特性的影響，臨界值職定也會有所 臨二枯為了維持出礙之晶片的可用性，往往會設定嚴苛的 於制炎也因此合易會誤判晶片内存有微粒而將良好電路 :2 =良電路’不僅造成時間與資源的浪費，也降低了 日日片之良率0 【發明内容】 微拉供—觀粒檢測綠及錄置，其可以提高 準確性’以及降低判斷微粒存在與否所參考之 q值X不同製程或晶片内電路特性的影響。 ，發明提供-種微粒檢測方法 至複數條引腳中第—引腳，廿… 无徒供脈衝笔棱 引腳中笛-21、 引腳並經取樣時間後擷取複數條 1腳.垃“ 1 其中第二引腳相鄰第 ’接者’提供脈衝電駐第二！丨腳並且經取樣時間 201037330 -2υυϊ -嶋-TW30364twfd〇c/n 引腳上多個的一第二取樣電壓;之後，依據複數條 第一取樣電η電壓之統計值，分別調整第—取樣電壓及 電壓為基準之第-制電壓及第二 定範圍/ ίΐ —偵測電壓或第二債測電壓超出預 明Γ斷第一引腳與第二引腳之間存有微粒。 Ο 〇 -=1供~種微粒檢雜置，其包括電壓產生單 70、電壓I測早元與處理單元。電壓產生單元在不同時間 :分：共脈衝電壓至複數條引腳中第一引 二曰 中弟：引腳相鄰第-引腳。電壓量測單元刪壓 =早兀。4壓產生單元提供脈衝電壓至第—引腳時， =壓1測早兀經取樣時間後量測第二引腳上的第一取樣電 ^而且，當電壓產生單元提供脈衝電壓至第二引腳時， %壓量測單元經取樣時間後量測第一引 接電壓量測單元。處理單元依二 腳上夕個取k電壓之統靠，分卿整第―取樣電壓及第 取樣電/C至以預疋電壓為基準之第—彳貞測電壓及 測電壓。當第-_電壓或第二_電壓超出預域圍 時，處理單元則判斷第-引腳與第二引聊之間存有微粒。 基於上述’本發明之微粒檢測方法及其裝置在不同時 間下分別施加脈衝電壓於兩相㈣腳，並且雙向量測兩引 腳上電壓的變化速度，以確保兩引腳間所量測之電容性阻 杬正確，以及提南微粒檢測之準確性。另外，本發明之微 粒檢測方法及其裝置更依據複數條引腳上取樣電^之统叶 值’調整取樣電壓為以預定電壓為基準的偵測電壓。此摘 5 201037330 HM-2008-0109-TW 30364twf.doc/n 測電壓為其縣之取樣電壓與複數條㈣上統計電 的相對關係。藉此’依據偵測電㈣預定範圍之 ^ 來判斷餘是否存在的料，可提高此錄制方法2201037330 HM-2008-0109-TW 30364twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a method and device for detecting particles, and in particular to a method for detecting on a wafer Method and device for particles. [Prior Art] With the development of consumer electronic products, the size of electronic products is becoming more and more strict. Due to advances in semiconductor manufacturing, the wafer size can be up to the nano-meter rating. However, as the size of the wafer is smaller, the precision of the process is affected, and the particles generated in the process will affect the yield of the sub-product and the circuit characteristics. Therefore, during the process, T must detect the circuit with the particles. <, Figure 1 is a schematic view of detecting particles on a wafer. Referring to FIG. 2, in the general particle detecting method, a voltage is usually applied to the L-l on the wafer and the voltage on the adjacent pin L2 is measured to know the resistive impedance between the pins u ❹=L2. And then determine whether there are particles between the two pins. However, in reality, the particles do not necessarily come into contact with the two pins to exhibit a resistive impedance, and it is also possible to form a non-contact capacitive impedance. Figure 2 is a schematic view of another - detecting particles on a wafer. Referring to Fig. 2, in the particle detecting method, whether or not particles are present can be interrupted by applying a voltage to its - pin u and measuring the speed of the voltage on the adjacent pin L2 with time. However, the capacitive impedance formed by the particles may have a positive or negative polarity. When the applied voltage 'pays the polarity of the a pin U or L2', the particle formation is not measured. 201037330 HM-2008-0109-TW 30364twf.doc/n = grain impedance. In addition, the internal pins of the chip may also be coupled with electronic components of polarity, such as protecting the diode for electrostatic protection. When the applied voltage causes the electronic component to actuate and leaks, the electric valley impedance of the particle is also not measured. Therefore, a single vector measurement of capacitive impedance is likely to cause detection of particle errors. On the other hand, in order to detect particles on the wafer, a comparison is made with a voltage on the adjacent (10) L2. That is to say, whether the measured voltage is excessive or not by the resistance or the capacitive impedance affects whether or not the particles are present. 'However, the setting of the threshold value is different from that of the wood, and even if it is affected by the characteristics of the components of the different circuits under the same process, the threshold value will be fixed in order to maintain the wafer. Usability, often set toughness in the production of inflammation, so it will be misjudged that there are particles in the chip memory and good circuit: 2 = good circuit' not only causes waste of time and resources, but also reduces the yield of day film 0 [ SUMMARY OF THE INVENTION Micro-drawing - Granulation detection of green and recording, which can improve the accuracy 'and reduce the influence of determining the presence or absence of particles in the q-value X process or circuit characteristics in the wafer. The invention provides a kind of particle detection method to the first pin of the plurality of pins, 廿... No pulse for the pulse pen edge pin, the pin, and after the sampling time, the plurality of pins are taken. 1 wherein the second pin adjacent to the 'connector' provides a pulsed current in the second! pin and has a sampling time of 201037330 -2 υυϊ - 嶋 - TW30364twfd 〇 c / n pin on a second sampling voltage; According to the statistical value of the first sampling electric η voltage of the plurality of strips, respectively adjusting the first sampling voltage and the voltage as the reference first voltage and the second constant range / ΐ ΐ - detecting voltage or second debt measuring voltage exceeds the preamble There is a particle between the first pin and the second pin. Ο 〇-=1 is used to detect the impurity, which includes the voltage generating unit 70, the voltage I, and the processing unit. The voltage generating unit is different. Time: minute: the total pulse voltage to the first number of pins in the first pin: the pin adjacent to the - pin. The voltage measuring unit is pressed = early 兀. The 4 voltage generating unit provides the pulse voltage to the first - When the pin is pressed, the first sample on the second pin is measured after the sampling time is measured. ^ Moreover, when the voltage generating unit supplies the pulse voltage to the second pin, the % pressure measuring unit measures the first lead voltage measuring unit after the sampling time. The processing unit takes the k voltage according to the two feet , the division of the whole - the sampling voltage and the sampling power / C to the pre-voltage based on the first - measured voltage and measured voltage. When the first -_ voltage or the second voltage exceeds the pre-domain, the processing unit Then, it is determined that there is a particle between the first pin and the second chatter. The particle detecting method and the device according to the above invention apply pulse voltage to the two-phase (four) pin at different times, and the two-vector two-pin is measured. The rate of change of the voltage to ensure the correct capacitive resistance measured between the two pins, and the accuracy of the detection of the particles in the south. In addition, the method and device for detecting particles according to the present invention are based on sampling on a plurality of pins. The voltage value of the system is adjusted to the detection voltage based on the predetermined voltage. This is the measurement voltage of the county and the sampling voltage (4). The relative relationship of statistical power. By using the ^ of the predetermined range of the detection power (4) to determine whether the remaining material exists, the recording method can be improved.
裝置於制不同製程下W的通祕，从降低微粒& 失誤。 J 為讓本發明之上述特徵和優點能更明顯易懂，下 舉實施例，並配合所附圖式作詳細說明如下。 寻 【實施方式】 圖3為本發明之-實關之錄檢崎㈣示意圖。 請參照圖3，微粒檢測裝置3〇2適於檢測晶片312 條引腳之間的微粒，於此僅綠示引腳u及[2示意之 粒檢測裝i 302包括電壓產生單元綱、電壓量測單元遍 與，理單元通。在本實補巾，微粒檢職置观為透 過夕工器310與晶片312上相鄰的兩引與引腳以連 接。喷參照圖4A ’為了檢測微粒是否存在於引腳。與引 腳1^之間，電麗產生單元304、經由多工器310之切換^如 多工斋310内貫線所示），而施加脈衝電壓於引腳上。 請參照圖4B ’經-取樣時間τ後，電壓量測單元3〇6便透 過多工器310之切換（如多工g31〇内實線所示），而量 測引腳L2上的取樣電壓vs丄，以得知引腳L2 間變化的速度。 微粒所形成之電容性阻抗可能使引腳L丨及引腳L 2有 正負極性之分。倘若所施加之脈衝電壓不符合引腳li或 201037330 HM-2008-0109-TW 30364twf.doc/n t之^生時，㈣量淋顺粒卿成之電紐阻抗。因 微粒檢測方法在不同時間下分別施加脈衝 产二被广腳’並且雙向量測兩引腳上電壓的變化速 兩引，電容性阻抗。也就是說 ‘ 4Α ‘產生單π 304亦經由多工器310之切 u上Γ-=3士 10内虛線所示），而施加脈衝電魔於引腳 3Η)之f Τ之後’電壓量測單元3〇6經由多工器 〇 上的取,雷上二工裔，内虛線所示）’而量測引腳L1 速度。d ，以得知弓I腳L1上電麗隨時間變化的 的曲二5為例兩圖;中引腳上所量測之電壓變化 電路而可^生有腳L1^2因連接晶片内部 間未存1碰彳^轉VC1便為兩引腳之 W為施加脈編於兩引腳L 化:= 腳L1及«曰 之其一時，從兩引 ❹當兩引腳L1及電壓變化。如曲線㈣所示， 阻抗备泛成引^之間存在微粒時，微粒所形成之電容性 f成引腳上所量測之電壓變化緩慢。 下，經取樣ΐϋ兩引ru及乙2之間未存有微粒的情況 之電壓VI二後所量測之取樣電壓應為曲線VC1所示 所量測之取樣電壓vsl；；t2^取樣㈣τ後從引腳L1/L2 用引腳上所_之取樣電壓來 =^V1。因此’可利 7 201037330 riivi-zuu6-WlvJ9-TW 30364twf.doc/n 圖6為本發明實施例圖3中 之取樣電壓的示意圖。請參照圖中聊量測 數條引腳進行上述實施例圖3 本只施例對曰曰片上複 1] - 处之微粒檢測並且取得取 ^ 測之取樣電壓高於其㈣丨^ 。_ 6可以得知’在弓丨腳之間未存有微粒情況 糾製程下所生產之晶片而言 5伏特與各引腳之取樣電壓進行比較，以檢 、j出弟11引腳與其相鄰引腳之間存有微粒。 使用錄是轉在醇奴臨界值會隨製程上 林同或W電路特性而有所不同。絲臨界值設 易造成過度誤排除微粒，導致良好的晶片 用j為2。因此’為了提高微粒檢測於不同製程下的通 整各引施例依據複數條引腳上取樣賴之統計值，調 使t> 為以—狀電廢為基準之侧電壓， 表示其對應之取樣電壓與複數條⑽上統計 电ιa的相對關係，並且進一步地進行微粒之判別。 =的不思圖。凊參照圖7，假設上述之統計值為複數 將=上取樣電壓之平均值’然並不侷限於此。本實施例 驗引腳上所量測之取樣電壓與上述平均值之差作為各引 Z之偵戦壓’賴整各⑽上取樣電壓為關定電壓（例 .〇伏特）為基準之偵測電壓。藉此，本實施例之微粒 双測在不同晶片製程下具有通用性’可不受引腳上所量測 201037330 WM-2uu«-〇i〇9-tw 30364twf.doc/n 之取樣^在不同晶片製程下可能位於不同位準電壓的影 響。接著，當引腳所對應之γ貞測電麼超出一預定範圍時， 便可判斷此引腳與其相鄰之引腳之間存有微粒。 依據上述實關，在此可歸納為下_方法流程。圖 :、、本發明之實補之微粒檢測方法的流程圖。請參昭圖 8，首先，將脈衝電壓提供至第—引腳（步驟_)…，並 且2樣時間後從相鄰第一引腳之第二引腳上操取對應第 〇 樣電壓（步驟_)。接著’將脈衝電賴供 驟S8G3)，並雜取樣時間後從第一引腳 麻對應第-引腳之取樣電壓（步驟聊4)。之 ⑽上之取樣電__值，將各 （ 則判斷第，與該第二 綜上所述，上述實施例之微粒檢測方法及1 © 測引腳之間是否存在微粒。在不^裝置可檢 壓於兩相鄰引腳，並且雙向量測兩引腳上二 =之準確性。另外，上述 ==3腳所對應之取樣電壓調整為二ί 準之偵權。經由將各引腳所對應之_ J J η預疋範圍進行比較，便可判斷 :、“ 4 間是否存在騎。兹《* _及其相鄰之引腳之 /、胃，可以提高微粒檢測於不同製程或 9 201037330 WM-^υυδ-υ 1U9-TW 30364twf.d〇c/n 者不同電路特性下的通用性，以及降低微粒檢測失誤。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為檢測晶片上微粒之示意圖。 圖2為另一檢測晶片上微粒之示意圖。 圖3本發明之一實施例之微粒檢測裝置的示意圖。 圖4A為本發明實施例圖3中脈衝電壓之曲線圖。 圖4B為本發明實施例圖3中引腳電壓變化之曲線圖。 圖5為本發明實施例圖3中引腳上所量測之電壓 的曲線圖。 圖6為本發明實施例圖3中複數條引腳上所分別量 之取樣電壓的示意圖。 里 中分別對應複數條引腳之偵 圖7為本發明實施例圖6 測電壓的示意圖。 圖8為本發明之一實施例之微粒檢測方法的流裎圖 【主要元件符號說明】 L1、L2 :引腳 302 ·微粒檢測裝置 304 :電壓產生單元 10 201037330 ηινι·ζυυδ-ui09-TW 30364twf.doc/n 306 :電壓量測單元 308 :處理單元 310 :多工器 312 :晶片 S801〜S806 :本發明之一實施例之微粒檢測方法的步The device is used to make the secrets of W under different processes, from reducing particles & errors. The above features and advantages of the present invention will be more apparent from the following description. [Embodiment] FIG. 3 is a schematic diagram of the recording of the real-time recording of the invention (4). Referring to FIG. 3, the particle detecting device 3〇2 is adapted to detect particles between the pins of the wafer 312. Here, only the green pin u and the [2 schematically particle detecting device i 302 include a voltage generating unit and a voltage amount. The measuring unit is connected to the unit. In the actual package, the microparticle inspection is connected to the two leads and pins adjacent to the wafer 312 through the circumscribing device 310. The spray is referred to Fig. 4A' in order to detect whether or not particles are present at the pins. Between the pin 1 and the pin, the switch generating unit 304, via the multiplexer 310, is shown as the internal line of the multi-chip 310, and a pulse voltage is applied to the pin. Referring to FIG. 4B after the 'sampling time τ, the voltage measuring unit 3〇6 is switched by the multiplexer 310 (as indicated by the solid line in the multiplex g31), and the sampling voltage on the pin L2 is measured. Vs丄 to know the speed of change between pins L2. The capacitive impedance formed by the particles may cause the pin L丨 and the pin L 2 to have positive and negative polarities. If the applied pulse voltage does not meet the pin li or 201037330 HM-2008-0109-TW 30364twf.doc/n t, then (4) the amount of the granules into the electric impedance. Because the particle detection method applies a pulse separately at different times, the second is measured by the wide-foot and the double-vector is used to measure the voltage change on both pins, and the capacitive impedance. That is to say, '4Α' yields a single π 304 which is also indicated by the multiplexer 310, which is shown by the dashed line in the multiplexer-=3±10, and the pulse is applied to the pin 3Η) after the f Τ The unit 3〇6 measures the speed of the pin L1 via the multiplexer, the upper part of the work, and the dotted line. d, in order to know that the curve II of the bow I pin L1 changes with time as an example of two figures; the voltage change circuit measured on the middle pin can be generated with the foot L1^2 due to the connection between the inside of the wafer There is no 1 touch 彳 ^ turn VC1 is the two pins W is applied to the two pins L: = pin L1 and « 曰 one of the two, when the two pins L1 and voltage changes. As shown in the curve (4), when there is a particle between the impedance and the impurity, the voltage measured by the particle f changes slowly on the pin. The sampled voltage measured after the voltage VI of the case where there is no particle between the two leads ru and B2 shall be the sampled voltage vsl measured by the curve VC1; t2^ after sampling (four) τ From the pin L1/L2, use the sampled voltage on the pin to =^V1. Therefore, 'Kelly 7 201037330 riivi-zuu6-WlvJ9-TW 30364twf.doc/n FIG. 6 is a schematic diagram of the sampling voltage in FIG. 3 according to an embodiment of the present invention. Please refer to the figure for the measurement of the number of pins to carry out the above embodiment. Figure 3 This example only detects the particle at the 1] - and the sampled voltage is higher than the (4) 丨^. _ 6 can know that there is no particle between the bow and the foot. In the case of the wafer produced under the correction process, 5 volts is compared with the sampling voltage of each pin to check, and the eleventh pin is adjacent to it. There are particles between the pins. The use of the record is a change in the alcohol slave threshold will vary with the process of the same or W circuit characteristics. The wire threshold is set to cause excessive misidentification of the particles, resulting in a good wafer with a j of 2. Therefore, in order to improve the particle detection in different processes, the various examples are based on the statistical values of the samples on the plurality of pins, and t> is the side voltage based on the electric waste, indicating the corresponding sampling. The voltage is correlated with the statistical power ι on the plurality of bars (10), and the discrimination of the particles is further performed. = not thinking. Referring to Fig. 7, it is assumed that the above statistical value is a complex number = the average value of the upsampled voltages is not limited thereto. In this embodiment, the difference between the sampling voltage measured on the pin and the average value is used as the detection voltage of each Z (the detection voltage of each (10) is a reference voltage (eg, volts) as the reference detection Voltage. Thereby, the dual-measurement of the microparticles of the embodiment has the versatility under different wafer processes, and can be sampled on the pin without measuring the measurement of 201037330 WM-2uu«-〇i〇9-tw 30364twf.doc/n. The process may be affected by different levels of voltage. Then, when the γ贞 corresponding to the pin exceeds a predetermined range, it can be determined that there is a particle between the pin and its adjacent pin. According to the above-mentioned actual customs, it can be summarized as the following method flow. Fig.: Flow chart of the method for detecting particles of the present invention. Please refer to FIG. 8. First, the pulse voltage is supplied to the first pin (step_), and after 2 time, the corresponding first sample voltage is taken from the second pin of the adjacent first pin (step _). Then, the pulse is supplied to the S8G3, and the sampling voltage of the first pin is made from the first pin after the sampling time (step 4). The sampling __ value on (10) will be used to determine whether or not there is a particle between the particle detecting method and the 1 © measuring pin of the above embodiment. Check the voltage on two adjacent pins, and double vector to measure the accuracy of the two pins on the two pins. In addition, the sampling voltage corresponding to the above ==3 pin is adjusted to the second-order detection. Corresponding _ JJ η pre-ratio range can be compared, you can judge: "Whether there is a ride between 4". "* _ and its adjacent pin /, stomach, can improve particle detection in different processes or 9 201037330 WM -^υυδ-υ 1U9-TW 30364twf.d〇c/n versatility under different circuit characteristics, and reducing particle detection errors. Although the invention has been disclosed above by way of example, it is not intended to limit the invention, any It is to be understood by those skilled in the art that the scope of the present invention is defined by the scope of the appended claims. Brief description of the diagram] Figure 1 is on the test wafer Fig. 2 is a schematic view of another particle detecting device according to an embodiment of the present invention. Fig. 4A is a graph showing a pulse voltage of Fig. 3 according to an embodiment of the present invention. FIG. 5 is a graph showing voltages measured on pins in FIG. 3 according to an embodiment of the present invention. FIG. 6 is a diagram showing multiple voltages in FIG. FIG. 8 is a schematic diagram of the voltage measurement of FIG. 6 in the embodiment of the present invention. FIG. 8 is a flow chart of the particle detecting method according to an embodiment of the present invention. 【图 [Main component symbol description] L1, L2: pin 302 · Particle detecting device 304: voltage generating unit 10 201037330 ηινι·ζυυδ-ui09-TW 30364twf.doc/n 306: voltage measuring unit 308: processing unit 310: Multiplexer 312: Wafers S801 to S806: Steps of the Particle Detection Method of an Embodiment of the Present Invention
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