201034263 六、發明說明： . 【發明所屬之枝術領域】 本發明係關於一種發光裝置，特別關於一種發光二極 體（LED)之聲光裝置。 【先前技術】 靜電放電（Electrostatic Discharge, ESD)是大多數的 半‘體元件义到過度電性應力（Eiectricai 〇verstress, E〇§ ) 破壞^主要因素。這種破壞會導致半導體元件形成永久性 的室又壞進而影響積體電路（Integrated Circuit，1C)的電 路功此，使彳于電子產品工作不正常。然而靜電放電破壞的 產生夕半疋由於人為因素所形成，且難於避免，如在製 造、生產、級裴、測試、存放及搬運等的過程。由於靜電 會累積在人體、儀器及儲放設備等之中，甚至半導體元件 本身也會累積靜電，而人們在不知情的情況下，將這些元 件及物體相互接觸，形成了—放電路徑，使 遭到靜電放電的破壞。 體兀件 光極體（LED)因其半導體元件特性而易 破壞:習知技術中，請參照圖1所示，其為發光二極體康 用於背光模組或照日月設備之發光二極體封I结構〗之一二 面圖’一般發光二極體11會在蠢晶或封料加入靜電: 護元，二以達到靜電保護之功效，通常在封裝發光::: 11 k取常使用—稽納二極體（Zener Di〇de) 12與發光〜 極體11逆向並聯’此作法雖可增加發光二極體1:抗靜； 201034263 能力，但是於封裝内增‘稽納二極體12不僅製程繁複， 且造成材料數量增加而提高成本，也會因為稽納二極體12 本身吸光及干涉發光二極體11在封裝内光線反射路徑， 而造成發光二極體封裝結構1之發光強度衰減。 另外，在設計發光二極體的應用產品時，若選用的發 光二極體本身不具有抗靜電能力，故必須重新設計發光二 極體的驅動電路，以達到靜電保護之功效。因此為了不同 的發光二極體，業者必須設計不同的驅動電路板，如此一 ❹ 來，不僅提高成本也耗費設計時間。 因此，如何提供一種發光裝置，以靈活適用於不同態 樣的發光二極體，且能夠達到靜電保護功效，正是當前的 重要課題之一。 【發明内容】 有鑑於上述課題，本發明之目的為提供一種能靈活適 $ 用於不同態樣的發光二極體，且能夠達到靜電保護功效之 發光裝置。 為達上述目的，本發明提供一種發光裝置，其包含一 基板、至少一發光單元、一電容器及一導電圖案。基板具 有一表面，發光單元設置於基板之表面。電容器設置於基 板之表面。導電圖案設置於基板之表面，並具有一靜電保 護區域，靜電保護區域係與發光單元及電容器電性連接。 承上所述，因依本發明之發光裝置係將電容器、靜電 保護區域及發光單元並聯。另外，靜電保護區域具有二連 4 201034263 接墊，可靈活運用於連接靜電保護元件。當高頻靜電傳輸 至發光裝置，電容會形成短路，使得高頻靜電會經由電容 短路之路徑，傳送至接地端；而當低頻靜電傳輸至發光裝 置，則經由靜電保護元件將高壓靜電抑制至安全值。此能 避免靜電破壞發光二極體，及減少靜電保護元件之數量以 節省成本，且發光裝置能靈活適用於不同態樣的發光二極 體，並能夠達到靜電保護功效。 • 【實施方式】 以下將參照相關圖式，說明依本發明較佳實施例之發 光裝置，其中相同的元件將以相同的參照符號加以說明。 請參照圖2所示，本發明實施例之發光裝置2係可應 用於顯示設備或照明設備，發光裝置2包含一基板21、至 少一發光單元22、一電容器23及一導電圖案24。本實施 例中，發光裝置2係以一組發光單元22為例，當然在不 廉 同實施例中，發光裝置2亦可包含複數發光單元22。 基板21具有一表面。基板21之材質係為樹脂、陶兗 或玻璃纖維等其他材質。 發光單元22設置於基板21之表面。發光單元22包 含至少一發光二極體221，另外，發光單元22也可包含複 數發光二極體221，該等發光二極體221為串聯、並聯或 其組合。本實施例中，發光單元22係以具有三個發光二 極體221為例，且該等發光二極體221為_聯。 電容器23設置於基板21之表面，且與發光單元22 5 201034263 並聯。當南頻靜電輸入至發光裝置2時，由於電容器之3 之容抗Xc = 1 /c〇C ( ω為角頻率==2πί ’ C為電容值，單位 為法拉）的特性，所以電容器23會形成短路，且為—趣 路將高頻靜電導向至接地端。本實施例中，電容器23為 一無極性電容器。 魯 請同時參照圖2及圖3所示，圖3為發光裝置2之― 等效電路圖。導電圖案24設置於基板21之表面，並具有 —靜電保護區域241及複數導線242，靜電保護區域241 藉由該等導線242與發光單元22及電容器23電性連接。 本實施例中，靜電保護區域241、發光單元22及電容器 23係為並聯。另外，靜電保護區域241包含二連接墊（Pads) 241a、241b ’連接墊241a藉由導線242連接發光單元22 之正極端，連接墊241b藉由導線242連接發光單元22之 負極端。 本實施例中，發光裝置2更可包含一靜電保護單元 25 ’設置於靜電保護區域241，並與該等連接塾241a、241b t性連接。其中，靜電保護單元25係為一稽納二極體， 袼納二極體之負極端與連接墊241&電性連接，稽納二極體 <正極端與連接墊241b電性連接。 請參照圖4至圖10所示，以針對發光裝置的變化態 像來說明。 請同時參照® 4及圖5所示，圖4為本發明實施例之 光裝置3之-不忌圖’圖5為本發明實施例之發光裝置 之-等效電路圖’與發輕置2 Μ的是，發光單元22 6 201034263 l 3至乂 ~'靜電保護元件222，靜電俘士馨_ 二極體221並聯。本實施例中，發光簞\几件222與發光 電保護元件222,且分別與相對應^ ^ 22包含三個靜 其中，靜電保護元件從係為一稽納二^並聯。 之正極端電性連接發光二極體22 ?，稽納二極體201034263 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device, and more particularly to an acousto-optic device for a light-emitting diode (LED). [Prior Art] Electrostatic discharge (ESD) is the main factor for most of the half-body elements to the Eicctricai 〇verstress (E〇§) damage. This damage causes the semiconductor device to form a permanent chamber and deteriorates, thereby affecting the circuit function of the integrated circuit (1C), which causes the electronic product to malfunction. However, the occurrence of electrostatic discharge damage is due to human factors and is difficult to avoid, such as in the manufacturing, production, leveling, testing, storage and handling processes. Since static electricity accumulates in the human body, instruments, storage devices, etc., even the semiconductor components themselves accumulate static electricity, and people unwittingly contact these components and objects to form a discharge path. To the destruction of electrostatic discharge. The body element (LED) is easily broken due to the characteristics of its semiconductor components: in the prior art, please refer to FIG. 1 , which is a light-emitting diode used for a backlight module or a light-emitting device according to the sun and the moon. One of the two parts of the polar body I structure〗 'General light-emitting diode 11 will add static electricity in the stupid crystal or sealing material: protect the element, the second to achieve the effect of electrostatic protection, usually in the package light::: 11 k Use - Zener Di〇de 12 and illuminate ~ polar body 11 reverse parallel 'This method can increase the light-emitting diode 1: anti-static; 201034263 ability, but increase the 'Jenner two poles in the package The body 12 not only has a complicated process, but also increases the amount of materials and increases the cost. It also causes the light-emitting diode package structure 1 to be caused by the absorption of the diode 12 itself and the interference of the light-reflecting path of the light-emitting diode 11 in the package. The luminous intensity is attenuated. In addition, when designing the application product of the light-emitting diode, if the selected light-emitting diode itself does not have anti-static capability, the driving circuit of the light-emitting diode must be redesigned to achieve the effect of electrostatic protection. Therefore, in order to have different light-emitting diodes, the operator must design different driving circuit boards, which not only increases the cost but also the design time. Therefore, how to provide a light-emitting device to be flexibly applied to different kinds of light-emitting diodes and to achieve electrostatic protection effect is one of the current important topics. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a light-emitting device that can be flexibly applied to different light-emitting diodes and that can achieve electrostatic protection. To achieve the above object, the present invention provides a light emitting device comprising a substrate, at least one light emitting unit, a capacitor, and a conductive pattern. The substrate has a surface, and the light emitting unit is disposed on the surface of the substrate. The capacitor is placed on the surface of the substrate. The conductive pattern is disposed on the surface of the substrate and has an electrostatic protection area electrically connected to the light emitting unit and the capacitor. As described above, the light-emitting device according to the present invention has a capacitor, an electrostatic protection region, and a light-emitting unit in parallel. In addition, the electrostatic protection area has two connection 4 201034263 pads, which can be flexibly used to connect electrostatic protection components. When high-frequency static electricity is transmitted to the light-emitting device, the capacitor will form a short circuit, so that the high-frequency static electricity will be transmitted to the ground through the path of the short-circuit of the capacitor; and when the low-frequency static electricity is transmitted to the light-emitting device, the high-voltage static electricity is suppressed to the safety via the electrostatic protection element. value. This can avoid electrostatic damage to the light-emitting diodes and reduce the number of electrostatic protection components to save costs, and the light-emitting device can be flexibly applied to different types of light-emitting diodes, and can achieve electrostatic protection. [Embodiment] Hereinafter, a light-emitting device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals. Referring to FIG. 2, the light-emitting device 2 of the embodiment of the present invention can be applied to a display device or a lighting device. The light-emitting device 2 includes a substrate 21, at least one light-emitting unit 22, a capacitor 23, and a conductive pattern 24. In the present embodiment, the light-emitting device 2 is exemplified by a group of light-emitting units 22. Of course, in the same embodiment, the light-emitting device 2 may also include a plurality of light-emitting units 22. The substrate 21 has a surface. The material of the substrate 21 is made of other materials such as resin, ceramics or glass fiber. The light emitting unit 22 is disposed on the surface of the substrate 21. The light emitting unit 22 includes at least one light emitting diode 221, and the light emitting unit 22 may also include a plurality of light emitting diodes 221, which are connected in series, in parallel, or a combination thereof. In this embodiment, the light-emitting unit 22 is exemplified by having three light-emitting diodes 221, and the light-emitting diodes 221 are connected. The capacitor 23 is disposed on the surface of the substrate 21 and is connected in parallel with the light emitting unit 22 5 201034263. When the south frequency static electricity is input to the light-emitting device 2, since the capacitive reactance of the capacitor 3 is Xc = 1 /c 〇 C ( ω is the angular frequency == 2πί 'C is the capacitance value, the unit is the farad), the capacitor 23 will A short circuit is formed, and the - interesting path directs the high-frequency static electricity to the ground. In this embodiment, the capacitor 23 is a non-polar capacitor. Please refer to FIG. 2 and FIG. 3 at the same time, and FIG. 3 is an equivalent circuit diagram of the light-emitting device 2. The conductive pattern 24 is disposed on the surface of the substrate 21 and has an electrostatic protection region 241 and a plurality of wires 242. The electrostatic protection region 241 is electrically connected to the light emitting unit 22 and the capacitor 23 by the wires 242. In the present embodiment, the electrostatic protection region 241, the light-emitting unit 22, and the capacitor 23 are connected in parallel. In addition, the electrostatic protection region 241 includes two connection pads (Pads) 241a, 241b. The connection pad 241a is connected to the positive terminal of the light-emitting unit 22 via a wire 242, and the connection pad 241b is connected to the negative terminal of the light-emitting unit 22 by a wire 242. In this embodiment, the illuminating device 2 further includes an electrostatic protection unit 25 ′ disposed on the electrostatic protection region 241 and t-connected to the connection ports 241a and 241b. The electrostatic protection unit 25 is a semiconductor diode, and the negative terminal of the Cannes diode is electrically connected to the connection pad 241 & the Zener diode is electrically connected to the connection pad 241 b. Referring to Figures 4 to 10, a description will be given of a change image of the light-emitting device. Please refer to FIG. 4 and FIG. 5 at the same time. FIG. 4 is a diagram of an optical device 3 according to an embodiment of the present invention. FIG. 5 is an equivalent circuit diagram of a light-emitting device according to an embodiment of the present invention. The light-emitting unit 22 6 201034263 l 3 to 乂 ~ 'electrostatic protection element 222, electrostatic trap _ 221 diode 221 in parallel. In this embodiment, the illuminating device 222 and the illuminating electrical protection component 222, respectively, and the corresponding ^^22 comprise three statics, and the electrostatic protection component is connected in a parallel manner. The positive terminal is electrically connected to the light-emitting diode 22?, the Zener diode
之負極端電性連接發光二極體221之正鸲，稽納二極體 施例中，該等連接塾241a、241b無電性連H另外，本實 清參照圖6所示，其為本發明實施例電保護早兀。 一電路圖’與發光裝置3不同的是，發光置$裝置4之 靜電保護單元25，設置於靜議董區域⑷，並 接^ 24U、蠢1性連接。其中，靜電保護單元25係為 一稽納二極體’稽納二極體之負極端與連接墊24ia電性連 接，稽納二極體之正極端與連接塾241b電性連接。 請參照圖7所示，其為本發明實施例之發光裝置5之 -電路圖，與發光裝置4不同的是，發光裝置5包含三發 光單元22,且該等發光單元22相並聯。另外，發光單元 22可不具有靜電保護元件222，但其發光裝置2需包含靜 電保護單元25，才可使發光裝置2具有靜電保護之功效。 請參照圖8所示，其為本發明實施例之發光裝置6之 一電路圖，與發光裝置5不同的是，發光裝置6包含複數 發光單元22、複數電容器23及複數靜電保護單元25，該 等發光單元22為串聯，該等電容器23與該等發光單元22 並聯。另外’導電圖案24具有複數靜電保護區域241，該 等靜電保護單元25設置於該等靜電保護區域214内。 7 201034263 請參照圖9所不，其鼻太双dd 、马本發明實施例之發光裝置 一電路圖，與發光裝置6不P1从B 之 • Μ的是，發光裝置7包含-發 光單元22、二電容器23及-毯命 0 —發 及一靜電保護單元25，其中，一 發光單元22與一電容器23 _ 久 ％電保護早兀25相並聪， 並形成一第一發光模組A，另一 & 一 發光單元22與另一電交哭 23及另一靜電保護單元25 平 乃i谷盜 並聯，並形成一第二發光模 組B。第一發光模組A及篥_ 1 , 尤棋 弟一發光模組B連接至相同的正 電壓，但連接至不同的負電壓， 丘 • 陽極發光裝置。 a々八 Μ參照圖10所’其為本發明實施例之發光裝置8 J一電路圖’與^光裝置7不同的是，第-發先模組Α及 ί:發光模組：連接至相同的負電壓，但連接至不同的正 電麗’使得此發光裝置8為一共陰極發光裝置。 值得一提的是，本實施例之發光裝置除了可以作為背 光模組的光源之外，還可以應用於廣告看板、燈箱、顯示 鲁 I置、照明裝置或其他電子裝置的光源。 ，’’、 綜上所述’因依本發明之發光裝置係將電容哭兩 保護區域及發光單元並聯。另外，靜電保護:J 接塾’可靈活運用於連接靜電保護元件。“= 會形成短路，使得高頻靜電會=電: .^經由靜電保護元件將高壓靜電抑制至安二： μ免frf：破壞發光二極體，及減少靜電保護t件之數量以 即省成本，且發光裝置能靈活適用於不同態後的發光二極The negative terminal is electrically connected to the positive electrode of the light-emitting diode 221, and in the embodiment of the second-pole body, the connection ports 241a and 241b are electrically connected to H. In addition, the present invention is shown in FIG. The example is electrically protected early. The circuit diagram ' differs from the illuminating device 3 in that the electrostatic protection unit 25 of the illuminating device 4 is disposed in the static area (4), and is connected to the 24U. The electrostatic protection unit 25 is electrically connected to the connection terminal 24ia of the negative terminal of the semiconductor diode, and the positive terminal of the diode is electrically connected to the connection port 241b. Referring to FIG. 7, which is a circuit diagram of a light-emitting device 5 according to an embodiment of the present invention, the light-emitting device 5 includes three light-emitting units 22, and the light-emitting units 22 are connected in parallel. In addition, the light-emitting unit 22 may not have the electrostatic protection element 222, but the light-emitting device 2 needs to include the electrostatic protection unit 25, so that the light-emitting device 2 can have the effect of electrostatic protection. Referring to FIG. 8 , it is a circuit diagram of a light-emitting device 6 according to an embodiment of the present invention. Unlike the light-emitting device 5 , the light-emitting device 6 includes a plurality of light-emitting units 22 , a plurality of capacitors 23 , and a plurality of electrostatic protection units 25 . The light emitting units 22 are connected in series, and the capacitors 23 are connected in parallel with the light emitting units 22. Further, the conductive pattern 24 has a plurality of electrostatic protection regions 241, and the electrostatic protection units 25 are disposed in the electrostatic protection regions 214. 7 201034263 Please refer to FIG. 9 , which is a circuit diagram of a light-emitting device of the embodiment of the present invention, and a light-emitting device 6 that does not have P1 from B. The light-emitting device 7 includes a light-emitting unit 22 and two. Capacitor 23 and - blanket 0 - and an electrostatic protection unit 25, wherein a light-emitting unit 22 and a capacitor 23 _ long-term electrical protection as early as 25 phase and Cong, and form a first lighting module A, another & A lighting unit 22 is connected in parallel with another electric power crying 23 and another electrostatic protection unit 25, and forms a second lighting module B. The first lighting module A and the 篥_1, and the illuminating module B are connected to the same positive voltage, but connected to different negative voltages, the agate anode lighting device. Referring to FIG. 10, the illuminating device 8 J is a circuit diagram of the embodiment of the present invention, which is different from the illuminating device 7. The first-and-first module Α and the illuminating module are connected to the same A negative voltage, but connected to a different positive voltage, makes the illumination device 8 a common cathode illumination device. It should be noted that the light-emitting device of the embodiment can be applied to a light source of an advertising billboard, a light box, a display device, a lighting device or other electronic devices, in addition to being used as a light source of the backlight module. In view of the above, the light-emitting device according to the present invention connects the capacitors to the two protection regions and the light-emitting units in parallel. In addition, electrostatic protection: J connection 可 can be used flexibly to connect electrostatic protection components. “= A short circuit will be formed, so that the high-frequency static electricity will be=electric: .^ suppress the high-voltage static electricity to the second via the electrostatic protection component: μ-free frf: destroy the light-emitting diode, and reduce the number of static-protection t-pieces to save costs And the light-emitting device can be flexibly applied to the light-emitting diodes after different states
S 201034263 體，並能夠達到靜電保護功效。 以上所述僅為舉例性，而非為限制性者。任何未脫離 本發明之精神與範疇，而對其進行之等效修改或變更，均 應包含於後附之申請專利範圍中。 【圖式簡單說明】 圖1為習知發光二極體封裝結構之一剖面圖； 圖2為本發明較佳實施例之發光裝置之一示意圖； ❹ 圖3為本發明較佳實施例之發光裝置之一電路圖； 圖4為本發明較佳實施例之發光裝置之一示意圖； 圖5為本發明較佳實施例之發光裝置之一電路圖； 圖6為本發明較佳實施例之發光裝置之另一電路圖； 圖7為本發明較佳實施例之發光裝置之又一電路圖； 圖8為本發明較佳實施例之發光裝置之再一電路圖； 圖9為本發明較佳實施例之發光裝置之一電路圖；以 及 參 圖10為本發明較佳實施例之發光裝置之另一電路圖。 【主要元件符號說明】 1 :發光二極體封裝結構 2〜8 :發光裝置 11、221 :發光二極體 12:稽納二極體 21 :基板 201034263 22 :發光單元 222:靜電保護元件 23 :電容器 24 :導電圖案 241 :靜電保護區域 241a、241b :連接墊 242 :導線 25 :靜電保護單元 ❿ A:第一發光模組 B :第二發光模組 Vi、\^2 .電壓S 201034263 body and can achieve electrostatic protection. The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the present invention are intended to be included in the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a conventional light emitting diode package structure; FIG. 2 is a schematic view showing a light emitting device according to a preferred embodiment of the present invention; Figure 4 is a schematic diagram of a light-emitting device according to a preferred embodiment of the present invention; Figure 5 is a circuit diagram of a light-emitting device according to a preferred embodiment of the present invention; Figure 6 is a schematic view of a light-emitting device according to a preferred embodiment of the present invention; FIG. 7 is a circuit diagram of a light-emitting device according to a preferred embodiment of the present invention; FIG. 8 is a circuit diagram of a light-emitting device according to a preferred embodiment of the present invention; 1 is a circuit diagram; and FIG. 10 is another circuit diagram of a light-emitting device according to a preferred embodiment of the present invention. [Description of main component symbols] 1 : Light-emitting diode package structure 2 to 8 : Light-emitting device 11 , 221 : Light-emitting diode 12 : Generating diode 21 : Substrate 201034263 22 : Light-emitting unit 222 : Electrostatic protection element 23 : Capacitor 24: Conductive pattern 241: Electrostatic protection area 241a, 241b: Connection pad 242: Conductor 25: Electrostatic protection unit ❿ A: First illumination module B: Second illumination module Vi, \^2. Voltage
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