TW201033733A - Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same - Google Patents

Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same Download PDF

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TW201033733A
TW201033733A TW98142468A TW98142468A TW201033733A TW 201033733 A TW201033733 A TW 201033733A TW 98142468 A TW98142468 A TW 98142468A TW 98142468 A TW98142468 A TW 98142468A TW 201033733 A TW201033733 A TW 201033733A
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group
atom
repeating unit
resin
alkyl
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TW98142468A
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TWI471688B (en
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Shuji Hirano
Kaoru Iwato
Hiroshi Saegusa
Yusuke Iizuka
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Fujifilm Corp
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Abstract

An actinic ray-sensitive or radiation-sensitive resin composition, includes: (A) a resin capable of increasing the solubility of the resin (A) in an alkali developer by the action of an acid; and (C) a resin having at least either a fluorine atom or a silicon atom and containing (c) a repeating unit having at least two or more polarity conversion groups.

Description

201033733 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種感光化射線或感放射線樹脂組成 物,其使用在半導體(諸如1C)的製造方法中’或使用在液 晶用電路板、熱感應頭及其類似物之製造或其它光製造的 微影蝕刻方法中;及使用其之圖案形成方法。更具體而言’ 本發明係關於一種合適於藉由沉浸投射曝光裝置’使用發 射出波長3 00奈米或較短的遠紫外光射線之光源來曝光的 © 正光阻組成物;及使用其之圖案形成方法。 【先前技術】 與半導體元件的微型化一起,趨勢正朝向較短波長的 曝光光源及較高數値孔徑(較高NA)的投影鏡頭移動’且已 知一種在投影鏡頭與樣品間裝塡高折射率液體(於此之後 有時指爲”沉浸液體")之所謂的沉浸方法’以試圖藉由更縮 短波長來提高解析度。沉浸方法對全部的圖案外形有效, 再者,其可與在目前硏究下的超解析技術(諸如’相位移方 〇 法及經修改的照明方法)結合。 因爲用於KrF準分子雷射(248奈米)的光阻出現,已使 用稱爲化學放大的影像形成方法作爲光阻之影像形成方 法,以便補償因光吸收所造成的靈敏度減低。例如,藉由 正化學放大作用的影像形成方法爲一種在曝光後,於曝光 區域中的酸產生劑分解而產生酸,使用所產生的酸作爲反 應觸媒,在曝光後的烘烤(PEB :曝光後烘烤)中,將鹼不溶 基團轉換成鹼可溶基團’及藉由鹼性顯影來移除曝光區域 201033733 的影像形成方法。 用於ArF準分子雷射(193奈米)的光阻目前佔絕大多 數使用此化學放大機制,但是當該光阻經沉浸曝光時,其 會包括造成所形成的線條圖案倒塌而在元件製造時引起缺 陷之圖案倒塌問題,或更無法滿足就圖案側壁被粗糙化之 線條邊緣粗糙度來說的性能。 同樣地,已指出當將該化學放大光阻應用至沉浸曝光 時,該光阻層會在曝光時接觸到沉浸液體,結果,該光阻 層會損壞或受該沉浸液體相反地影響之組分會從該光阻層 © 中流出。爲了解決此問題,在1?-八-2006-309245(如於本文 中所使用,名稱"JP-A"意謂著"未審查的公告日本專利申請 案·,) 、 JP-A-2007-3045 37 、 J P - A - 2 0 0 7 -1 8 2 4 8 8 及 JP-A-2007-153982中已描述出藉由加入包含矽原子或氟原 子的樹脂來防止該流出之實施例》 再者,在沉浸曝光方法中,當使用掃描型式沉浸曝光 機器來進行曝光時,除非該沉浸液體隨著鏡片移動而移 動,否則曝光速度會減低及此可影響生產力。在該沉浸液 ® 體爲水的實例中,該光阻薄膜疏水較佳,因爲會有好的水 流動性。 在JP-A-2008-111103中,已指示出該光阻圖案外形使 用特定的降萡烷內酯衍生物改良。 但是,甚至當使用上述描述的技術來進行沉浸曝光 時,進一步需要更減少稱爲BLOB缺陷的顯影缺陷或浮 渣、顆粒或氣泡缺陷產生及改良圖案外形。 -4- 201033733 【發明內容】 本發明之目標爲提供一種感光化射線或感放射線樹脂 組成物,其能形成一改良線條邊緣粗糙度及浮渣產生、減 少顯影缺陷、保證僅些微酸溶析進入沉浸液體中、對沉浸 液體有好的流動性、及多種就顆粒抑制、圖案外形及氣泡 缺陷防止而論好的性能之圖案;及使用其之圖案形成方法。 由於爲了達到上述描述的目標之密集硏究,本發明家 已達成描述在下列的本發明。 本發明具有下列構成物。 (1) 一種感光化射線或感放射線樹脂組成物,其包含: (A)能藉由酸作用增加該樹脂(A)在鹼性顯影劑中的溶 解度之樹脂;及 (C)樹脂’其具有至少氟原子或矽原子的任一個及包括 —在由式(KA-1)或(KB-1)所表示的結構中具有至少二或更 多個由-COO-所表示的極性轉換基團之重覆單元(c):201033733 VI. Description of the Invention: [Technical Field] The present invention relates to a sensitized ray or radiation sensitive resin composition which is used in a manufacturing method of a semiconductor (such as 1C) or used in a circuit board for liquid crystal, heat In the manufacture of inductive heads and the like, or in other photolithographic etching methods; and pattern forming methods using the same. More specifically, the present invention relates to a positive photoresist composition suitable for exposure by a light source emitting a wavelength of 300 nm or shorter far-ultraviolet rays by an immersion projection exposure apparatus; and using the same Pattern forming method. [Prior Art] Along with the miniaturization of semiconductor components, the trend is moving toward a shorter wavelength exposure source and a higher number of aperture (higher NA) projection lenses' and it is known that the projection lens and the sample are mounted high. The refractive index liquid (hereafter referred to as the "immersion liquid") is called "immersion method" in an attempt to improve the resolution by shortening the wavelength. The immersion method is effective for all pattern shapes, and further, it can be In combination with the current super-analytical techniques (such as 'phase shifting method and modified lighting method). Because of the appearance of photoresist for KrF excimer laser (248 nm), it has been called chemical amplification. The image forming method is used as a photoresist image forming method to compensate for the sensitivity reduction caused by light absorption. For example, an image forming method by positive chemical amplification is an acid generator decomposition in an exposed region after exposure. The acid is generated, and the generated acid is used as a reaction catalyst. In the post-exposure baking (PEB: post-exposure baking), the alkali-insoluble group is converted into an alkali. The group's image formation method by removing the exposed area 201033733 by alkaline development. The photoresist used for the ArF excimer laser (193 nm) currently accounts for the vast majority of the use of this chemical amplification mechanism, but when the light When immersed in immersion exposure, it may include a pattern collapse that causes the formed line pattern to collapse to cause defects during component fabrication, or a performance that is less than the roughness of the line edge of the pattern sidewall being roughened. It has been pointed out that when the chemically amplified photoresist is applied to an immersion exposure, the photoresist layer contacts the immersion liquid upon exposure, and as a result, the photoresist layer may be damaged or the components adversely affected by the immersion liquid may In the photoresist layer ©. In order to solve this problem, in 1?-八-2006-309245 (as used in this article, the name "JP-A" means "unexamined announcement of Japanese patent application· , by JP-A-2007-3045 37, JP-A-2 0 0 7 -1 8 2 4 8 8 and JP-A-2007-153982, by adding a resin containing a halogen atom or a fluorine atom To prevent the outflow of the embodiment" In the immersion exposure method, when the scanning type immersion exposure machine is used for exposure, unless the immersion liquid moves as the lens moves, the exposure speed is lowered and this may affect productivity. The immersion liquid is water. In the examples, the photoresist film is preferably hydrophobic because of good water flow. In JP-A-2008-111103, it has been indicated that the photoresist pattern profile is improved using a specific norbornane lactone derivative. However, even when immersion exposure is performed using the techniques described above, there is a further need to further reduce development defects or scum, particle or bubble defect formation and improved pattern profile known as BLOB defects. -4-201033733 SUMMARY OF THE INVENTION An object of the present invention is to provide a sensitized ray or a radiation-sensitive resin composition capable of forming an improved line edge roughness and scum generation, reducing development defects, and ensuring only a slight acid dissolution. In the immersion liquid, good fluidity to the immersion liquid, and various patterns of properties in terms of particle suppression, pattern shape and bubble defect prevention; and a pattern forming method using the same. The present inventors have reached the present invention described below in order to achieve the intensive study of the objectives described above. The present invention has the following constitutions. (1) A photosensitive ray or radiation sensitive resin composition comprising: (A) a resin capable of increasing the solubility of the resin (A) in an alkali developer by an acid action; and (C) a resin having Any one of at least a fluorine atom or a ruthenium atom and including - at least two or more of a polarity-converting group represented by -COO- in a structure represented by formula (KA-1) or (KB-1) Repeat unit (c):

其中Zka代表烷基、環烷基、醚基團、羥基、醯胺基 團、芳基、內酯環基團或吸電子基團;及當存在有複數個 Zka時,該複數個zka可相同或不同; 每個zka可與每個其它Zka結合以形成環; 201033733 nka代表整數0至10 ;Wherein Zka represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a guanamine group, an aryl group, a lactone ring group or an electron withdrawing group; and when a plurality of Zka are present, the plurality of zkas may be the same Or different; each zka can be combined with each other Zka to form a ring; 201033733 nka represents an integer 0 to 10;

Xkbl及Xkb2各者各自獨立地代表吸電子基團; nkb及nkb’各者各自獨立地代表0或1;及 Rkbi至Rfcb4各者各自獨立地代表氫原子、烷基、環烷 基、芳基或吸電子基團;Rkbl、Rkb2及Xkbi之至少二個成 員可彼此結合以形成環;及Rkb3、Rkw及Xkb2之至少二個 成員可彼此結合以形成環。 (2) 如在上述(1)中所描述的感光化射線或感放射線樹 脂組成物, ❹ 其中該重覆單元(c)爲在一側鏈上具有至少二或更多 個極性轉換基團及至少氟原子或矽原子的任一個之重覆單 元(C,卜 (3) 如在上述(1)中所描述的感光化射線或感放射線樹 脂組成物, 其中該重覆單元(c)爲具有至少二或更多個極性轉換 基團且不具有氟原子或矽原子的重覆單元(C*);及 該樹脂(C)進一步包括具有至少氟原子或矽原子的任 © 一個之重覆單元。 (4) 如在上述(1)中所描述的感光化射線或感放射線樹 脂組成物, 其中該重覆單元(c)爲重覆單元(c”),其在一側鏈上具 有至少二或更多個極性轉換基團,同時在相同重覆單元 中’於與該側鏈不同的側鏈上具有至少氟原子或矽原子的 任一個。 -6- 201033733 (5)如在上述(1)至(4)之任何一項中所描述的感光化射 線或感放射線樹脂組成物, 其中該重覆單元(c)具有由下列式(KY-1)所表示的結Each of Xkbl and Xkb2 independently represents an electron withdrawing group; each of nkb and nkb' independently represents 0 or 1; and each of Rkbi to Rfcb4 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group. Or an electron withdrawing group; at least two members of Rkbl, Rkb2 and Xkbi may be bonded to each other to form a ring; and at least two members of Rkb3, Rkw and Xkb2 may be bonded to each other to form a ring. (2) The sensitized ray or radiation sensitive resin composition as described in the above (1), wherein the repeating unit (c) has at least two or more polar switching groups on one side chain and a repetitive unit of at least one of a fluorine atom or a ruthenium atom (C, (3) is a sensitized ray or a radiation-sensitive resin composition as described in the above (1), wherein the repetitive unit (c) has a repeating unit (C*) having at least two or more polar converting groups and having no fluorine atom or germanium atom; and the resin (C) further comprising a repeating unit having at least one of fluorine atoms or germanium atoms (4) The sensitized ray or radiation sensitive resin composition as described in the above (1), wherein the repeating unit (c) is a repeating unit (c") having at least two on one side chain Or more than one polarity-switching group, while having at least one of a fluorine atom or a ruthenium atom on a side chain different from the side chain in the same repeating unit. -6- 201033733 (5) as in the above (1) The sensitized ray or radiation sensitive resin described in any one of (4) Into the composition, wherein the repeating unit (c) having a junction (KY-1) represented by the following formula

其中Rkyl及Rky4各者各自獨立地代表氫原子、鹵素原 〇 子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚基團、 羥基、氰基、醯胺基團或芳基;Rkyl與Rky4可鍵結至相同 原子以形成雙鍵;Wherein each of Rkyl and Rky4 independently represents a hydrogen atom, a halogen pronator, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, a guanamine group or an aromatic group. a group; Rkyl and Rky4 may be bonded to the same atom to form a double bond;

Rky2及Rky3各者各自獨立地代表吸電子基團;或Rkyl 與Rky2結合以形成內酯環,同時 Rky3爲吸電子基團;Each of Rky2 and Rky3 independently represents an electron withdrawing group; or Rkyl combines with Rky2 to form a lactone ring, while Rky3 is an electron withdrawing group;

Rkyl、Rky2及Rky4之至少二個成員可彼此結合以形成 單環或多環結構;及At least two members of Rkyl, Rky2 and Rky4 may be bonded to each other to form a monocyclic or polycyclic structure;

Rkbi至Rkb4、nkb及nkb’具有與在式(KB-1)中相同的 (6)如在上述(1)至(5)之任何一項中所描述的感光化射 線或感放射線樹脂組成物, 其中該重覆單元(c)具有一由下列式(KY-2)所表示的結Rkbi to Rkb4, nkb, and nkb' have the same (6) as in the formula (KB-1), the sensitized ray or radiation-sensitive resin composition as described in any one of the above (1) to (5) Wherein the repeating unit (c) has a knot represented by the following formula (KY-2)

201033733 其中Rky6至RkylO各者各自獨立地代表氫原子、鹵素 原子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚基團、 羥基、氰基、醯胺基團或芳基;201033733 wherein each of Rky6 to RkylO independently represents a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, a guanamine group or an aryl group. ;

Rky6至RlcylO之二或更多個成員可彼此結合以形成單 環或多環結構;Two or more members of Rky6 to RlcylO may be bonded to each other to form a monocyclic or polycyclic structure;

Rky5代表吸電子基團:及Rky5 represents an electron withdrawing group: and

Rkbi、Rkb2及nkb具有與在式(KB-1)中相同的意義。 (7)如在上述(1)至(6)之任何一項中所描述的感光化射 線或感放射線樹脂組成物, © 其中該樹脂(C)具有至少一個由式(F2)至(F4)及式 (CS-1)至(CS-3)之任何一種所表示的基團: R明Rkbi, Rkb2, and nkb have the same meanings as in the formula (KB-1). (7) The sensitized ray or radiation sensitive resin composition as described in any one of the above (1) to (6), wherein the resin (C) has at least one of the formulae (F2) to (F4) And a group represented by any one of the formulae (CS-1) to (CS-3): R

其中R„至KM各者各自獨立地代表氫原子、氟原子、〇 線性或分支烷基或芳基,其限制條件爲R57至R61之至少一 個、R62至R64之至少一個及Re 5至R68之至少一個各者各 自獨立地代表氟原子或含有至少一個氫原子由氟原子置換 的烷基;及R62與R63可彼此結合以形成環: 201033733Wherein each of R „ to KM independently represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group or an aryl group, and the limitation is at least one of R57 to R61, at least one of R62 to R64, and Re 5 to R68. At least one each independently represents a fluorine atom or an alkyl group containing at least one hydrogen atom replaced by a fluorine atom; and R62 and R63 may be bonded to each other to form a ring: 201033733

I 、Ό Rie-S.〇^Sf-R19I, Ό Rie-S.〇^Sf-R19

(CS-3) (CS-2) (CS-1) 其中Rl2至R26各者各自獨立地代表線性或分支烷基 或環烷基; L3至L5各者代表單鍵或二價連結基團;及 η代表整數1至5。 (8) 如在上述(7)中所描述的感光化射線或感放射線樹 脂組成物, 其中該樹脂(C)包括至少一個具有由式(F2)至(F4)及式 (CS-1)至(CS-3)之任何一種所表示的基團之丙烯酸酯或甲 基丙烯酸酯重覆單元。 (9) 如在上述(1)至(8)之任何一項中所描述的感光化射 線或感放射線樹脂組成物, 其中該樹脂(C)的含量從0.01至10質量%,以在該感 光化射線或感放射線樹脂組成物中的全部固體含量爲準。 (10) 如在上述(1)至(9)之任何一項中所描述的感光化 射線或感放射線樹脂組成物,其更包含: (Β)能在以光化射線或輻射照射後產生酸的化合物。 (11) 如在上述(1)至(1〇)之任何一項中所描述的感光化 射線或感放射線樹脂組成物’ 201033733 其中該樹脂(A)包括含內酯結構的重覆單元。 (12) 如在上述(1)至(11)之任何一項中所描述的感光化 射線或感放射線樹脂組成物, 其中該樹脂(A)具有單環或多環之可酸分解的基團。 (13) —種光阻薄膜,其從如在上述(1)至(12)之任何一 項中所描述的感光化射線或感放射線樹脂組成物形成。 (14) —種圖案形成方法,其包括: 沉浸曝光及顯影如在上述(13)中所描述的光阻薄膜。 【實施方式】 具體實施例之說明 本發明詳細描述在下列。 附隨地’在本發明中’當所表示出的基團(原子基團) 沒有具體指出是否經取代或未經取代時,該基團包括不具 有取代基的基團及具有取代基的基團二者。例如,"院基” 不僅包括不具有取代基的烷基(未經取代的烷基),而且亦 包括具有取代基的烷基(經取代的烷基)。 在本發明中,名稱"光化射線"或"輻射”指爲例如汞燈 的亮線光譜、爲準分子雷射的典型之遠紫外光射線、極紫 外光、X射線或電子束。同樣地,在本發明中,"光"意謂 著光化射線或輻射。 再者’在本發明中,除非其它方面指示出,否則”曝光 "不僅包括以汞燈、爲準分子雷射的典型之遠紫外光射線、 X射線、EUV光或其類似能量來曝光,而且亦包括以粒子 束(諸如電子束及離子束)微影蝕刻。 201033733 本發明之感光化射線或感放射線樹脂組成物包括(A) 能藉由酸作用增加在鹼性顯影劑中的溶解度之樹脂,及(C) 具有至少氟原子或矽原子的任一個且包含具有至少二或更 多個極性轉換基團之重覆單元的樹脂,及進一步包括(B)能 在以光化射線或輻射照射後產生酸的化合物較佳。 [1]能藉由酸作用增加在鹼性顯影劑中的溶解度之樹脂(A) 該組分(A)的樹脂爲一種能藉由酸作用增加在鹼性顯 影劑中的溶解度之樹脂,及此爲在該樹脂的主鏈及側鏈之 © —或二者上具有一能藉由酸作用分解以產生可溶於鹼的基 團之基團(於此之後有時指爲"可酸分解的基團")之樹脂。 該可溶於鹼的基團之實施例包括酚羥基、羧基、氟化 的醇基團、磺酸基團、磺醯胺基團、颯基醯亞胺基團、(烷 基颯基)(烷基羰基)亞甲基、(烷基砸基)(烷基羰基)醯亞胺 基團、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基團、雙 (烷基礪基)亞甲基、雙(烷基碾基)醯亞胺基團、三(烷基羰 基)亞甲基及三(烷基颯基)亞甲基。 © — 該可溶於鹼的基團之較佳實施例包括羧基、氟化的醇 基團(六氟異丙醇較佳)及磺酸基團。 較佳作爲該可酸分解的基團之基團爲上述可溶於鹼的 基團之氫原子由能藉由酸作用離去的基團置換之基團。 該能藉由酸作用離去的基團之實施例包括 -C(R36)(R37)(R38)及- C(R〇i)(R〇2)(〇R39)。 在該式中,R3 6至R3 9各者各自獨立地代表烷基、環烷 基、芳基、芳烷基或烯基;及R3 6與R3 7可彼此結合以形成 201033733 R〇1及R〇2各者各自獨立地代表氫原子、烷基、環烷基、 芳基、芳烷基或烯基。 該可酸分解的基團爲芡基酯基團、烯醇酯基團、乙縮 醛酯基團、三級烷基酯基團或其類似基團較佳’三級烷基 酯基團更佳。 該組分(A)的樹脂具有單環或多環之可酸分解的基團 較佳。至於該單環或多環之可酸分解的基團’Ru至r39之 任何一個爲環烷基或R36與R37結合以形成環的結構較佳。 © 該組分(A)的樹脂包括具有可酸分解的基團之重覆單 元較佳。該具有可酸分解的基團之重覆單元爲由下列式(AI) 所表示的重覆單元較佳:(CS-3) (CS-2) (CS-1) wherein each of Rl2 to R26 independently represents a linear or branched alkyl group or a cycloalkyl group; each of L3 to L5 represents a single bond or a divalent linking group; And η represents an integer of 1 to 5. (8) The sensitized ray or radiation sensitive resin composition as described in the above (7), wherein the resin (C) includes at least one of the formula (F2) to (F4) and the formula (CS-1) to An acrylate or methacrylate repeating unit of the group represented by any of (CS-3). (9) The sensitized ray or radiation sensitive resin composition as described in any one of the above (1) to (8), wherein the content of the resin (C) is from 0.01 to 10% by mass in the sensitization The total solid content in the ray or radiation sensitive resin composition is correct. (10) The sensitized ray or radiation sensitive resin composition as described in any one of the above (1) to (9), further comprising: (Β) capable of generating an acid after irradiation with actinic rays or radiation compound of. (11) A sensitized ray or radiation sensitive resin composition as described in any one of the above (1) to (1), wherein the resin (A) comprises a repeating unit having a lactone structure. (12) A photosensitive ray or radiation sensitive resin composition as described in any one of the above (1) to (11), wherein the resin (A) has a monocyclic or polycyclic acid-decomposable group . (13) A photoresist film formed from the sensitized ray or radiation sensitive resin composition as described in any one of the above (1) to (12). (14) A pattern forming method comprising: immersing exposure and developing a photoresist film as described in the above (13). [Embodiment] Description of Specific Embodiments The present invention is described in detail below. Incidentally, in the present invention, when a group (atomic group) represented does not specifically indicate whether it is substituted or unsubstituted, the group includes a group having no substituent and a group having a substituent. both. For example, "hospital based" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In the present invention, the name " Actinic ray " or "radiation" refers to, for example, a bright line spectrum of a mercury lamp, a typical far ultraviolet ray, an extreme ultraviolet light, an X-ray, or an electron beam that is a quasi-molecular laser. Similarly, in the present invention, "light" means actinic radiation or radiation. Further, 'in the present invention, unless otherwise indicated, the "exposure" includes not only a mercury lamp, a typical far ultraviolet ray, a X-ray, an EUV light or the like which is excimer laser light, but also exposure. It also includes lithographic etching with a particle beam such as an electron beam and an ion beam. 201033733 The sensitized ray or radiation sensitive resin composition of the present invention comprises (A) an increase in solubility in an alkaline developer by an acid action. a resin, and (C) a resin having at least one of a fluorine atom or a ruthenium atom and comprising a repeating unit having at least two or more polar conversion groups, and further comprising (B) capable of actinic ray or radiation A compound which generates an acid after irradiation is preferred. [1] A resin which can increase the solubility in an alkaline developer by an acid action (A) The resin of the component (A) is an alkali which can be increased by an acid action. a solubility resin in the developer, and thus has a group capable of decomposing by an acid to produce an alkali-soluble group in the main chain and the side chain of the resin. Sometimes referred to as " The resin of the acid-decomposable group "). Examples of the alkali-soluble group include a phenolic hydroxyl group, a carboxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a fluorenyl group Imine group, (alkylalkyl)(alkylcarbonyl)methylene, (alkylalkyl)(alkylcarbonyl)indolide group, bis(alkylcarbonyl)methylene group, bis(alkane) a carbonyl iodide group, a bis(alkylindenyl)methylene group, a bis(alkyl fluorenyl) fluorenylene group, a tris(alkylcarbonyl)methylene group, and a tris(alkyl fluorenyl group) Methylene. © — The preferred embodiment of the alkali-soluble group includes a carboxyl group, a fluorinated alcohol group (preferably hexafluoroisopropanol), and a sulfonic acid group. The group of the group is a group in which the hydrogen atom of the above-mentioned alkali-soluble group is replaced by a group which can be removed by an acid action. Examples of the group which can be removed by an acid include - C(R36)(R37)(R38) and -C(R〇i)(R〇2)(〇R39). In the formula, each of R3 6 to R3 9 independently represents an alkyl group or a cycloalkyl group. , aryl, aralkyl or alkenyl; and R3 6 and R3 7 This combination to form 201033733 R〇1 and R〇2 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group. The acid-decomposable group is a mercapto ester group. Preferably, the group, the enol ester group, the acetal ester group, the tertiary alkyl ester group or the like is preferably a 'trialkyl ester group. The resin of the component (A) has a single The acid-decomposable group of the ring or polycyclic ring is preferred. As for the monocyclic or polycyclic acid-decomposable group 'Ru to r39', any one of them is a cycloalkyl group or R36 is bonded to R37 to form a ring. Preferably, the resin of the component (A) comprises a repeating unit having an acid-decomposable group. The repeating unit having an acid-decomposable group is a repeat represented by the following formula (AI) The unit is better:

Rx, (冲 cr^o--rx2 在式(AI)中,Xai代表氫原子、可具有取代基的甲基或 〇 由-CHz-R9所表示的基團。R9代表羥基或單價有機基團, 及該單價有機基團的實施例包括具有碳數5或較少的院基 及具有碳數5或較少的醯基。該單價有機基團爲具有碳數 3或較少的烷基較佳,甲基更佳。又^爲氫原子、甲基、三 氟甲基或羥甲基較佳。 Τ代表單鍵或二價連結基團。Rx, (rushing cr^o--rx2 In the formula (AI), Xai represents a hydrogen atom, a methyl group which may have a substituent or a group represented by -CHz-R9. R9 represents a hydroxyl group or a monovalent organic group. And examples of the monovalent organic group include a group having a carbon number of 5 or less and a fluorenyl group having a carbon number of 5 or less. The monovalent organic group is an alkyl group having a carbon number of 3 or less Preferably, the methyl group is more preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. Τ represents a single bond or a divalent linking group.

Rxi至RX3各者各自獨立地代表烷基(線性或分支)或環 -12- 201033733 烷基(單環或多環)。 出自Ru至RX3的二個成員可結合以形成環烷基(單環 或多環)。 該T的二價連結基團之實施例包括伸烷基、-CO〇-Rt-基團及-Ο-Rt-基團,其中Rt代表伸烷基或伸環烷基。 T爲單鍵或- COO-Rt-基團較佳。Rt爲具有碳數1至5 的伸烷基較佳,-CH2_基團或-(CH2)3-基團更佳。 該尺^至Rx3的烷基爲具有碳數1至4的烷基較佳, 〇 諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及三 級丁基。 該1^!至Rx3的環烷基爲下列較佳:單環的環烷基, 諸如環戊基及環己基;或多環的環烷基,諸如降萡基、四 環癸基、四環十二烷基及金剛烷基。 該藉由結合出自Rxi至Rx3的二個成員所形成之環烷 基爲下列較佳:單環的環烷基,諸如環戊基及環己基;或 多環的環烷基,諸如降萡基、四環癸基、四環十二烷基及 φ 金剛烷基。具有碳數5至6之單環的環烷基更佳。Each of Rxi to RX3 independently represents an alkyl group (linear or branched) or a ring -12-201033733 alkyl (monocyclic or polycyclic). Two members from Ru to RX3 may be combined to form a cycloalkyl group (monocyclic or polycyclic). Examples of the divalent linking group of T include an alkylene group, a -CO〇-Rt- group, and a -Ο-Rt- group, wherein Rt represents an alkylene group or a cycloalkyl group. It is preferred that T is a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a -CH2_ group or a -(CH2)3- group. The alkyl group of the ruthenium to Rx3 is preferably an alkyl group having 1 to 4 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and tert-butyl. The cycloalkyl group of 1^! to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclic fluorenyl group or a tetracyclic ring. Dodecyl and adamantyl. The cycloalkyl group formed by combining two members derived from Rxi to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a decyl group. , tetracyclic fluorenyl, tetracyclododecyl and φ adamantyl. A cycloalkyl group having a single ring having 5 to 6 carbon atoms is more preferable.

Rxi爲甲基或乙基及Rx2與Rx3結合以形成上述描述的 環烷基之具體實施例較佳。 上述每個基團可具有取代基;及該取代基的實施例包 括院基(具有碳數1至4)、鹵素原子、羥基、院氧基(具有 碳數1至4)、羧基及烷氧基羰基(具有碳數2至6)。該碳數 爲8或較少較佳。 該含可酸分解的基團之重覆單元的總含量從20至70 -13- 201033733 莫耳%較佳,從30至50莫耳%更佳,以在該樹脂中的全部 重覆單元爲準。 下列提出該具有可酸分解的基團之重覆單元的特定較 佳實施例,但是本發明不限於此。 在特定的實施例中,Rx及Xai各者代表氫原子、CH3、 CF3或CH2OH’及Rxa與Rxb各者代表具有碳數!至4的 烷基。z代表(當存在有複數個Z時,各者各自獨立地代表) 極性基團或含極性基團的取代基。特別是,Z包括與之後 描述的式(2-1)之R1G相同的那些,p代表〇或正整數。 ©Particular embodiments in which Rxi is a methyl or ethyl group and Rx2 is combined with Rx3 to form a cycloalkyl group as described above are preferred. Each of the above groups may have a substituent; and examples of the substituent include a group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (having a carbon number of 1 to 4), a carboxyl group, and an alkoxy group. A carbonyl group (having a carbon number of 2 to 6). The carbon number is 8 or less. The total content of the repeating unit containing the acid-decomposable group is preferably from 20 to 70 -13 to 201033733, and more preferably from 30 to 50 mol%, so that all the repeating units in the resin are quasi. A specific preferred embodiment of the repeating unit having the acid-decomposable group is proposed below, but the invention is not limited thereto. In a particular embodiment, each of Rx and Xai represents a hydrogen atom, CH3, CF3 or CH2OH' and each of Rxa and Rxb represents a carbon number! Alkyl group up to 4. z represents (when there are a plurality of Z, each of them independently represents a polar group or a substituent containing a polar group). Specifically, Z includes the same ones as R1G of the formula (2-1) described later, and p represents 〇 or a positive integer. ©

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重覆單元之樹脂更佳Repeated unit resin is better

Ri R3Ri R3

在式(1)及(2)中,Ri及R3各者各自獨立地代表氫原 子、可具有取代基的甲基或由-ch2-r9所表示的基團。R9 代表羥基或單價有機基團。 R2、R4、R5及R6各者各自獨立地代表烷基或環烷基。 R代表與該碳原子一起形成脂環族結構所需要的原子 基團。 1爲氫原子、甲基、三氟甲基或羥甲基較佳° -17. 201033733 該在R2中的烷基可爲線性或分支及可具有取代基。 該在r2中的環烷基可爲單環或多環及可具有取代基。 R2爲烷基較佳,具有碳數1至10的烷基更佳,具有 碳數1至5的烷基又更佳,及其實施例包括甲基及乙基。 R代表與該碳原子一起形成脂環族結構所需要的原子 基團。 由R形成的脂環族結構爲單環的脂環族結構較佳,及 其碳數從3至7較佳,5或6更佳。 R3爲氫原子或甲基較佳,甲基更佳。 ® 在R4、R5及R6中的烷基可爲線性或分支及可具有取 代基。該烷基爲具有碳數1至4的烷基較佳,諸如甲基、 乙基、正丙基、異丙基、正丁基、異丁基及三級丁基。 在R4、115及R6中的環烷基可爲單環或多環及可具有 取代基。該環烷基爲下列較佳:單環的環烷基,諸如環戊 基及環己基;或多環的環烷基,諸如降萡基、四環癸基、 四環十二烷基及金剛烷基。 該有機基團或R9的特定實施例及較佳實施例與對式 ® (AI)之R9所描述的那些相同。 由式(1)所表示的重覆單元之實施例包括由下列式(1-1) 所表示的重覆單元。在該式中,Ri及具有與在式(1)中 的那些相同之意義。In the formulae (1) and (2), each of Ri and R3 independently represents a hydrogen atom, a methyl group which may have a substituent or a group represented by -ch2-r9. R9 represents a hydroxyl group or a monovalent organic group. Each of R2, R4, R5 and R6 independently represents an alkyl group or a cycloalkyl group. R represents an atomic group required to form an alicyclic structure together with the carbon atom. 1 is a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. -17. 201033733 The alkyl group in R2 may be linear or branched and may have a substituent. The cycloalkyl group in r2 may be monocyclic or polycyclic and may have a substituent. R2 is preferably an alkyl group, more preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group. R represents an atomic group required to form an alicyclic structure together with the carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and its carbon number is preferably from 3 to 7, more preferably 5 or 6. R3 is preferably a hydrogen atom or a methyl group, and more preferably a methyl group. The alkyl group in R4, R5 and R6 may be linear or branched and may have a substituent. The alkyl group is preferably an alkyl group having a carbon number of 1 to 4, such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, and a tertiary butyl group. The cycloalkyl group in R4, 115 and R6 may be monocyclic or polycyclic and may have a substituent. The cycloalkyl group is preferably the following: a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclononyl group, a tetracyclododecyl group, and a diamond. alkyl. Specific examples and preferred embodiments of the organic group or R9 are the same as those described for R9 of formula ® (AI). The embodiment of the repetitive unit represented by the formula (1) includes a repetitive unit represented by the following formula (1-1). In the formula, Ri has the same meaning as those in the formula (1).

-18- 201033733 由式(2)所表示的重覆單元爲由下列式(2-1)所表示的 重覆單元較佳: R3 人(2-1) R5 p 在式(2-1)中,R3至Rs具有與在式(2)中的那些相同之 〇 意義。 R1()代表極性基團或含極性基團的取代基。在存在有;^ 數個Rio的實例中,每個R1()可與每個其它R1()相同或不 同。該極性基團爲例如羥基、氰基、胺基、烷基醯胺基_ 或磺醯胺基團。該含極性基團的取代基爲具有此極性基團 的線性或分支烷基或環烷基較佳,具有羥基的烷基更佳, 具有羥基的分支烷基又更佳,及該分支烷基爲異丙基較佳。 ^ P代表整數〇至15 op爲整數0至2較佳,0或1更佳。 ❹ 該樹脂(A)可包括複數個含可酸分解的基團之重覆單 元。 如上所述,該樹脂(A)爲包含由式(1)所表示的重覆簞 元及由式(2)所表示的重覆單元之至少任一種作爲該由武 (AI)所表示的重覆單元之樹脂較佳。在另—個具體實施例 中,該樹脂(A)爲包含至少二種由式所表示的重覆單元 或由式(1)所表示的重覆單元與由式(2)所表示的重覆單元 二者作爲該由式(AI)所表示的重覆單元之樹脂較佳。 -19- 201033733 同樣地,本發明之光阻組成物可包含複數種樹脂(A), 及包含在該複數種樹脂(A)中之含可酸分解的基團之重覆 單元可彼此不同。例如,可組合著使用包含由式(1)所表示 的重覆單元之樹脂(A)與包含由式(2)所表示的重覆單元之 樹脂(A)。-18- 201033733 The repeating unit represented by the formula (2) is preferably a repeating unit represented by the following formula (2-1): R3 person (2-1) R5 p in the formula (2-1) R3 to Rs have the same meanings as those in the formula (2). R1() represents a polar group or a substituent containing a polar group. In the case where there are; several Rios, each R1() may be the same or different from every other R1(). The polar group is, for example, a hydroxyl group, a cyano group, an amine group, an alkylguanamine group or a sulfonamide group. The polar group-containing substituent is preferably a linear or branched alkyl group or a cycloalkyl group having such a polar group, an alkyl group having a hydroxyl group is more preferable, a branched alkyl group having a hydroxyl group is more preferable, and the branched alkyl group is more preferable. It is preferably an isopropyl group. ^ P represents an integer 〇 to 15 op is an integer 0 to 2 is preferable, and 0 or 1 is more preferable. ❹ The resin (A) may comprise a plurality of repeating units containing acid-decomposable groups. As described above, the resin (A) is at least one of the repeating unit represented by the formula (1) and the repeating unit represented by the formula (2) as the weight represented by the AI. The resin of the covering unit is preferred. In another specific embodiment, the resin (A) is a repeating unit comprising at least two types represented by the formula or a repeating unit represented by the formula (1) and a repeat represented by the formula (2) Both of the units are preferably used as the resin of the repeating unit represented by the formula (AI). -19- 201033733 Similarly, the photoresist composition of the present invention may comprise a plurality of resins (A), and the repeating units containing the acid-decomposable groups contained in the plurality of resins (A) may be different from each other. For example, a resin (A) comprising a repeating unit represented by the formula (1) and a resin (A) containing a repeating unit represented by the formula (2) can be used in combination.

下列提出當該樹脂(A)包含複數個含可酸分解的基團 之重覆單元時,及當複數種樹脂(A)包含不同含可酸分解的 基團之重覆單元時的組合之較佳實施例。在下列式中,每 個R各自獨立地代表氫原子或甲基。The following is a summary of the combination when the resin (A) comprises a plurality of repeating units containing acid-decomposable groups, and when the plurality of resins (A) comprise different repeating units containing acid-decomposable groups. A good example. In the following formula, each R independently represents a hydrogen atom or a methyl group.

_ 編 _ ^ «« _ 1 冬1 , • *. CTO 0^0 C古 • _ -e4* 論 1 a 一 _ .冷作 >· • · _ ΰ^τη-m — _ — _ _ 作•峰· • «, •命冰 1¾¾] •崎· .<^1* -20- 201033733 該組分(A)的樹脂進一步包括具有至少一個選自於內酯 基團、羥基、氰基及可溶於鹼的基團之基團的重覆單元較 佳。 下列描述出該可包含在該組分(A)的樹脂中之含內酯 基團的重覆單元。 至於該內酯基團,可使用任何基團’只要其具有內酯 結構,但是該內酯結構爲5至7員環的內酯結構較佳’及 ® 另一個環結構以形成雙環或螺結構的形式稠和至5至7員 環內酯結構之結構較佳。該樹脂包括具有由下列式(LC 1-1) 至(LC 1-17)之任何一種所表示的內酯結構之重覆單元更 佳。該內酯結構可直接鍵結至主鏈。在這些內酯結構當中’ (LC1-1)、(LC1-4)、(LC1-5)、(LC1-6)、(LC1-13)、(LC1-14) 及(LC1-17)較佳。藉由選擇最理想的內酯基團’改良圖案 外形、孤立/密集偏差、線條邊緣粗糙度及顯影缺陷。_ 编_ ^ «« _ 1 Winter 1 , • *. CTO 0^0 C Ancient • _ -e4* On 1 a _ . Cold work >· • · _ ΰ^τη-m — _ — _ _ • Peak · • «, • Life Ice 13⁄43⁄4] • Saki · . <^1* -20- 201033733 The resin of the component (A) further comprises at least one selected from the group consisting of a lactone group, a hydroxyl group, a cyano group and A repeating unit of a group soluble in a base group is preferred. The repeating unit containing the lactone group which may be contained in the resin of the component (A) is described below. As the lactone group, any group 'may be used as long as it has a lactone structure, but the lactone structure is preferably a lactone structure of 5 to 7 membered rings, and the other ring structure is formed to form a bicyclic or spiro structure. The structure is fused to a structure of 5 to 7 membered cyclic lactone structures. The resin preferably comprises a repeating unit having a lactone structure represented by any one of the following formulae (LC 1-1) to (LC 1-17). The lactone structure can be directly bonded to the backbone. Among these lactone structures, '(LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), (LC1-14) and (LC1-17) are preferred. . Pattern shape, isolated/dense deviation, line edge roughness, and development defects are improved by selecting the most desirable lactone group.

-21- 201033733 該內酯結構部分可或可不具有取代基(Rb2)。該取代基 (Rbz)的較佳實施例包括具有碳數1至8的烷基、具有碳數 4至7的環烷基、具有碳數1至8的烷氧基、具有碳數2 至8的烷氧基羰基、羧基、鹵素原子、羥基、氰基及可酸 分解的基團。在這些當中’具有碳數1至4的烷基、氰基 及可酸分解的基團更佳。Μ代表整數〇至4。當„2爲整數 2或更大時,每個取代基(Rb〇可與每個其它取代基(Rb2)相 同或不同;同樣地’每個取代基(RbO可與每個其它取代基 (Rb2)結合以形成一環。 具有由式(LC 1-1)至(LC1-17)之任何一種所表示的內 酯結構之重覆單元包括由下列式(ΑΠ)所表示的重覆單元:-21- 201033733 The lactone moiety may or may not have a substituent (Rb2). Preferred examples of the substituent (Rbz) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, and having 2 to 8 carbon atoms. Alkoxycarbonyl group, carboxyl group, halogen atom, hydroxyl group, cyano group and acid-decomposable group. Among these, the alkyl group having a carbon number of 1 to 4, a cyano group and an acid-decomposable group are more preferable. Μ represents an integer 〇 to 4. When „2 is an integer of 2 or more, each substituent (Rb〇 may be the same as or different from each other substituent (Rb2); likewise 'each substituent (RbO may be associated with each other substituent (Rb2) Combining to form a ring. The repeating unit having a lactone structure represented by any one of the formulae (LC 1-1) to (LC1-17) includes a repeating unit represented by the following formula (ΑΠ):

COOAb-V 在式(All)中’ Rb〇代表氫原子' 鹵素原子或具有碳數1 至4之可具有取代基的烷基。該RbQ的烷基可具有之取代 〇 基的較佳實施例包括羥基及鹵素原子。Rbo的鹵素原子包 括氟原子、氯原子、溴原子及碘原子。至於Rbo,氫原子' 甲基、羥甲基或三氟甲基較佳,氫原子或甲基更佳。COOAb-V In the formula (All) 'Rb 〇 represents a hydrogen atom 'halogen atom or an alkyl group having a carbon number of 1 to 4 which may have a substituent. Preferred examples of the alkyl group of the RbQ which may have a substituted fluorenyl group include a hydroxyl group and a halogen atom. The halogen atom of Rbo includes a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. As for Rbo, a hydrogen atom 'methyl group, a methylol group or a trifluoromethyl group is preferred, and a hydrogen atom or a methyl group is more preferred.

Ab代表單鍵、伸烷基、具有單環或多環脂環烴結構的 二價連結基團、醚基團、酯基團、羰基或包含其組合之二 價連結基團’及單鍵或由-Ah-CO2-所表示的二價連結基團 較佳。 -22- 201033733Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group or a divalent linking group including a combination thereof, and a single bond or The divalent linking group represented by -Ah-CO2- is preferred. -22- 201033733

Ah代表線性或分支伸烷基或單環或多環伸環烷基’ 且亞甲基、伸乙基、伸環己基、伸金剛烷基或伸降萡基較 佳。 V代表具有由式(LC1-1)至(LC1-17)之任何一種所表示 的結構之基團。 具有內酯基團的重覆單元通常具有光學異構物’但是 可使用任何光學異構物。可單獨使用一種光學異構物或可 使用複數種光學異構物的混合物。在主要使用一種光學異 ® 構物的實例中,其光學純度(ee)爲90%或更大較佳,95%或 更大更佳》 該具有內酯基團的重覆單元爲由下列式(3)所表示之 含內醋結構的重覆單元較佳:Ah represents a linear or branched alkyl group or a monocyclic or polycyclic cycloalkyl group and a methylene group, an ethyl group, a cyclohexylene group, an adamantyl group or a stretched fluorenyl group is preferred. V represents a group having a structure represented by any one of the formulae (LC1-1) to (LC1-17). The repeating unit having a lactone group usually has an optical isomer' but any optical isomer can be used. One optical isomer may be used alone or a mixture of a plurality of optical isomers may be used. In the case of mainly using an optical heterostructure, the optical purity (ee) is preferably 90% or more, more preferably 95% or more. The repeating unit having a lactone group is represented by the following formula: (3) The repeated unit containing the internal vinegar structure is preferably:

在式(3)中,A代表酯鍵(-COO-)或醯胺鍵(-CONH-)。 R〇代表(當存在有複數個R〇時,各者各自獨立地代表) 伸烷基、伸環烷基或其組合。 Z代表(當存在有複數個Z時,各者各自獨立地代表) 醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或尿素鍵。 R8代表具有內酯結構的單價有機基團。 η爲在式(3)之重覆單元中由-R〇-Z-所表示的結構之重 覆數目及代表整數1至5。 h代表氫原子、鹵素原子或可具有取代基的烷基。 -23- 201033733 該R〇的伸烷基及伸環烷基各者可具有取代基。 Z爲醚鍵或酯鍵較佳,酯鍵更佳。 該的烷基爲具有碳數1至4的烷基較佳,甲基或乙 基更佳,甲基又更佳。在R7中的烷基可經取代,及該取代 基的實施例包括鹵素原子(諸如氟原子、氯原子及溴原 子)、锍基團、羥基、烷氧基(諸如甲氧基、乙氧基 '異丙 氧基、三級丁氧基及苄氧基)、及醯氧基(諸如乙醯氧基及 丙醯氧基)。尺7爲氫原子、甲基、三氟甲基或羥甲基較佳。 在R〇中的鏈伸烷基爲具有碳數1至10的鏈伸烷基較 佳,具有碳數1至5的鏈伸烷基更佳,及其實施例包括亞 甲基、伸乙基及伸丙基。該伸環烷基爲具有碳數4至20的 伸環烷基較佳,及其實施例包括伸環己基、伸環戊基、伸 降萡基及伸金剛烷基。爲了使本發明的效應出現,鏈伸烷 基更佳及亞甲基仍然更佳。 該由Rs所表示的含內酯結構取代基無限制,只要其具 有內酯結構。其特定實施例包括由式(LC1-1)至(LC1-17)所 表示的內酯結構’及在這些當中,由(LC1-4)所表示的結構 較佳。在(LC1-1)至(LC1-17)中的n2爲整數2或較少之結構 更佳。In the formula (3), A represents an ester bond (-COO-) or a guanamine bond (-CONH-). R 〇 represents (when a plurality of R 存在 are present, each independently represents) an alkyl group, a cycloalkyl group or a combination thereof. Z represents (when there are a plurality of Z, each of them independently represents an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond). R8 represents a monovalent organic group having a lactone structure. η is the number of overlaps of the structure represented by -R〇-Z- in the repeating unit of the formula (3) and represents the integers 1 to 5. h represents a hydrogen atom, a halogen atom or an alkyl group which may have a substituent. -23- 201033733 The alkylene and cycloalkyl groups of the R〇 may have a substituent. Z is preferably an ether bond or an ester bond, and the ester bond is more preferred. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and more preferably a methyl group. The alkyl group in R7 may be substituted, and examples of the substituent include a halogen atom (such as a fluorine atom, a chlorine atom, and a bromine atom), a hydrazine group, a hydroxyl group, an alkoxy group (such as a methoxy group, an ethoxy group). 'Isopropoxy, tert-butoxy and benzyloxy), and anthraceneoxy (such as ethoxylated and propyloxy). The ruler 7 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. The alkyl group in R 为 is preferably a chain alkyl group having 1 to 10 carbon atoms, more preferably a chain alkyl group having 1 to 5 carbon atoms, and examples thereof include methylene group and ethyl group. And stretch propyl. The cycloalkyl group is preferably a cycloalkyl group having 4 to 20 carbon atoms, and examples thereof include a cyclohexylene group, a cyclopentylene group, an extended fluorenyl group and an adamantyl group. In order for the effect of the present invention to occur, the alkylene group is more preferred and the methylene group is still better. The lactone-containing structural substituent represented by Rs is not limited as long as it has a lactone structure. Specific examples thereof include the lactone structure represented by the formulae (LC1-1) to (LC1-17) and among these, the structure represented by (LC1-4) is preferred. The structure in which n2 in (LC1-1) to (LC1-17) is an integer of 2 or less is more preferable.

Rs爲具有未經取代的內酯結構之單價有機基團或包含 具有甲基、氰基或烷氧基羰基作爲取代基的內酯結構之單 價有機基團較佳’包含具有氟基作爲取代基的內酯結構(氰 基內酯)之單價有機基團更佳。 該含內酯結構的重覆單元爲由下列式(3_υ所表示的重 覆單元較佳: 201033733The monovalent organic group having a monovalent organic group having an unsubstituted lactone structure or a lactone structure having a methyl group, a cyano group or an alkoxycarbonyl group as a substituent preferably contains a fluorine group as a substituent. The monovalent organic group of the lactone structure (cyanolactone) is more preferred. The repeating unit having a lactone structure is preferably a repeating unit represented by the following formula (3_υ: 201033733

在式(3-1)中’ R7、a、R〇、Z及η具有與在式(3)中相 同的意義。 以代表(當存在有複數個119時,各者各自獨立地代表) 院基、環烷基、烷氧基羰基、氰基、羥基或烷氧基;及當 © 存在有複數個R9時,其二個成員可結合以形成環。 X代表伸烷基、氧原子或硫原子。 m爲取代基數目及代表整數〇至5。m爲0或1較佳。 該R9之烷基爲具有碳數1至4的烷基較佳,甲基或乙 基更佳及甲基最佳。該環烷基包括環丙基、環丁基、環戊 基及環己基。該烷氧基羰基的實施例包括甲氧基羰基、乙 氧基羰基、正丁氧基羰基及三級丁氧基羰基。該烷氧基的 實施例包括甲氧基、乙氧基、丙氧基及丁氧基。這些基團 〇 可具有取代基,及該取代基包括羥基、烷氧基(諸如甲氧基 及乙氧基)' 氰基及鹵素原子(諸如氟原子)。r9爲甲基、烷 氧基羰基或氰基較佳,氰基更佳。 該X的伸烷基之實施例包括亞甲基及伸乙基。X爲氧 原子或亞甲基較佳,亞甲基更佳。 當m爲整數1或更大時,至少一個R9取代在該內酯的 羰基之α -位置或A -位置處較佳,在a -位置處更佳。 下列提出該具有內酯基團的重覆單元之特別佳的實施例。 在這些特定實施例中,Rx代表h、ch3、ch2oh或cf3。 -25- 201033733 R代表氫原子、可具有取代基的烷基或鹵素原子,及 氫原子、甲基或具有取代基的烷基(也就是說,三氟甲基、 羥甲基或乙醯基氧基甲基)較佳。In the formula (3-1), 'R7, a, R〇, Z and η have the same meanings as in the formula (3). Represented (when there are a plurality of 119, each of which is independently represented by each), a cycloalkyl, alkoxycarbonyl, cyano, hydroxy or alkoxy group; and when a plurality of R9 are present, Two members can combine to form a ring. X represents an alkyl group, an oxygen atom or a sulfur atom. m is the number of substituents and represents an integer 〇 to 5. It is preferred that m is 0 or 1. The alkyl group of R9 is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group. The cycloalkyl group includes a cyclopropyl group, a cyclobutyl group, a cyclopentyl group and a cyclohexyl group. Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a n-butoxycarbonyl group, and a tertiary butoxycarbonyl group. Examples of the alkoxy group include a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. These groups 〇 may have a substituent, and the substituent includes a hydroxyl group, an alkoxy group such as a methoxy group and an ethoxy group, a cyano group, and a halogen atom such as a fluorine atom. R9 is preferably a methyl group, an alkoxycarbonyl group or a cyano group, and a cyano group is more preferred. Examples of the alkylene group of X include a methylene group and an ethyl group. X is preferably an oxygen atom or a methylene group, and a methylene group is more preferred. When m is an integer of 1 or more, at least one R9 substitution is preferably at the α-position or the A-position of the carbonyl group of the lactone, and more preferably at the a-position. A particularly preferred embodiment of the repeating unit having a lactone group is set forth below. In these particular embodiments, Rx represents h, ch3, ch2oh or cf3. -25- 201033733 R represents a hydrogen atom, an alkyl group or a halogen atom which may have a substituent, and a hydrogen atom, a methyl group or an alkyl group having a substituent (that is, a trifluoromethyl group, a hydroxymethyl group or an ethyl fluorenyl group) Oxymethyl group is preferred.

-26- 201033733 該具有內酯基團的重覆單元之含量從15至60莫耳% 較佳,從20至50莫耳%更佳,從30至50莫耳%又更佳, 以在該樹脂中的全部重覆單元爲準。 該樹脂(A)可包含一種含內酯基團之重覆單元或複數 種含內酯基團之重覆單元。 亦可組合著使用二或更多種選自於式(3)的內酯重覆 單元來提高本發明之效應。當組合使用時,組合使用二或 ® 更多種選自於η爲1、出自式(3)的內酯重覆單元之重覆單 元較佳。組合著使用在式(All)中的Ab爲單鍵之內酯重覆 單元及η爲1、出自式(3)的內酯重覆單元亦較佳。 該組分(Α)的樹脂包含具有羥基或氰基的重覆單元較 佳,其與由式(ΑΙ)所表示的重覆單元及含內酯基團之重覆 單元分開(當這些重覆單元包含羥基或氰基時)。由於此重 覆單元,對基材的黏附力及對顯影劑的親和力提高。該具 有羥基或氰基的重覆單元爲具有由羥基或氰基取代之脂環 烴結構的重覆單元較佳,且不包含可酸分解的基團較佳。 在由羥基或氰基取代的脂環烴結構中之脂環烴結構爲金剛 烷基、雙金剛烷基或降萡烷基團較佳。該由羥基或氰基取 代的脂環烴結構之較佳實施例包括單羥基金剛烷基、二羥 基金剛烷基、單羥基二金剛烷基、二羥基二金剛烷基及經 氰基取代的降萡基。 該由羥基或氰基取代的脂環烴結構爲由下列式(Vila) 至(Vlld)所表示的部分結構較佳: -27- 201033733-26- 201033733 The content of the repeating unit having a lactone group is preferably from 15 to 60 mol%, more preferably from 20 to 50 mol%, even more preferably from 30 to 50 mol%. All repeating units in the resin shall prevail. The resin (A) may comprise a repeating unit containing a lactone group or a plurality of repeating units containing a lactone group. It is also possible to use two or more lactone repeating units selected from the formula (3) in combination to enhance the effect of the present invention. When used in combination, it is preferred to use two or more in combination with a repeating unit selected from a lactone repeating unit of the formula (3). It is also preferred to use a lactone repeating unit in which Ab in the formula (All) is a single bond, and a lactone repeating unit derived from the formula (3). The resin of the component (Α) preferably comprises a repeating unit having a hydroxyl group or a cyano group, which is separate from the repeating unit represented by the formula (ΑΙ) and the repeating unit containing a lactone group (when these repeats are repeated) When the unit contains a hydroxyl group or a cyano group). Due to this overlapping unit, the adhesion to the substrate and the affinity for the developer are improved. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group, and preferably does not contain an acid-decomposable group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group is preferably an adamantyl group, a bisadamantyl group or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure substituted by a hydroxy group or a cyano group include monohydroxyadamantyl, dihydroxyadamantyl, monohydroxydiadamantyl, dihydroxydiadamantyl and cyano substituted萡基. The alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group is preferably a partial structure represented by the following formulas (Vila) to (Vlld): -27- 201033733

在式(VIIa)至(Vlie)中,R2C至R4C各者各自獨立地代 表氫原子、翔基或氰基,其限制條件爲R2c至R4c之至少 一個代表羥基或氰基。出自R2C至R4c之一或二個成員爲 羥基且剩餘爲氫原子的結構較佳。在式(VIIa)中,出自R2c 至R4c的二個成員爲羥基及剩餘爲氫原子更佳。 該具有由式(VI la)至(VI Id)所表示的部分結構之重覆 單元包括由下列式(Alla)至(Alld)所表示的重覆單元:In the formulae (VIIa) to (Vlie), each of R2C to R4C independently represents a hydrogen atom, a sulfhydryl group or a cyano group, with the limitation that at least one of R2c to R4c represents a hydroxyl group or a cyano group. A structure derived from one or two of R2C to R4c is a hydroxyl group and the remainder is a hydrogen atom. In the formula (VIIa), two members derived from R2c to R4c are a hydroxyl group and the remainder is preferably a hydrogen atom. The repeating unit having a partial structure represented by the formulae (VI la ) to (VI Id) includes a repeating unit represented by the following formulas (Alla) to (Alld):

在式(Alla)至(Alld)中,RlC代表氫原子、甲基、三氟 甲基或羥甲基。 R2c至R4c具有與在式(Vila)至(Vile)中的R2c至R4c 相同的意義。 該具有羥基或氰基的重覆單元之含量從5至40莫耳。/。 較佳,從5至30莫耳%更佳,從10至25莫耳%又更佳, 以在該樹脂(A)中的全部重覆單元爲準。 -28- 201033733 下列提出該具有羥基或氰基的重覆單元之特定實施 例,但是本發明不限於此。In the formulae (Alla) to (Alld), R1C represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. R2c to R4c have the same meanings as R2c to R4c in the formulas (Vila) to (Vile). The content of the repeating unit having a hydroxyl group or a cyano group is from 5 to 40 moles. /. Preferably, it is more preferably from 5 to 30 mol%, more preferably from 10 to 25 mol%, and all of the repeating units in the resin (A) are taken as the standard. -28-201033733 A specific embodiment of the repeating unit having a hydroxyl group or a cyano group is proposed below, but the invention is not limited thereto.

該組分(A)的樹脂包括具有可溶於鹼的基團之重覆單 元較佳。該可溶於鹼的基團包括羧基、磺醯胺基團、颯基 醯亞胺基團、雙碾基醯亞胺基團及-位置由吸電子基團取 代的脂肪族醇(諸如六氟異丙醇基團)。包含具有羧基的重 覆單元更佳。藉由包含具有可溶於鹼的基團之重覆單元, 在形成接觸孔洞的用途上之解析度增加。至於該具有可溶 於鹼的基團之重覆單元,可溶於鹼的基團直接鍵結至該樹 脂主鏈的重覆單元(諸如藉由丙烯酸或甲基丙烯酸的重覆 單元)、可溶於鹼的基團經由連結基團鍵結至樹脂主鏈之重 覆單元、及在聚合時使用含可溶於鹸的基團之聚合起始劑 或鏈轉移劑將可溶於鹼的基團引進聚合物鏈終端中之重覆 單元全部較佳。該連結基團可具有單環或多環的環烴結 構。特別是,藉由丙烯酸或甲基丙烯酸的重覆單元較佳。 該具有可溶於鹼的基團之重覆單元的含量從〇至20莫 耳%較佳,從3至15莫耳%更佳,從5至10莫耳%又更佳, 以在該樹脂(A)中的全部重覆單元爲準。 -29- 201033733 下列提出該具有可溶於鹼的基團之重覆單元的特定實 施例’但是本發明不限於此。Rx代表氫原子、CH3、CF3 或 ch2oh。The resin of the component (A) preferably comprises a repeating unit having a group soluble in a base. The alkali-soluble group includes a carboxyl group, a sulfonamide group, a mercaptoquinone group, a bis-indenylene imine group, and an aliphatic alcohol (such as hexafluorofluoride) substituted at an electron withdrawing group. Isopropyl alcohol group). It is more preferable to include a repeating unit having a carboxyl group. The resolution in the use of forming contact holes is increased by including a re-fraction unit having a group soluble in a base. As for the repeating unit having a base which is soluble in a base, the alkali-soluble group is directly bonded to the repeating unit of the resin main chain (such as a repeating unit by acrylic acid or methacrylic acid), The alkali-soluble group is bonded to the repeating unit of the resin main chain via a linking group, and the base is soluble in the polymerization using a polymerization initiator or a chain transfer agent containing a hydrazine-soluble group. It is preferred that the group introduces repeating units in the polymer chain terminal. The linking group may have a monocyclic or polycyclic cyclic hydrocarbon structure. In particular, a repeating unit made of acrylic acid or methacrylic acid is preferred. The content of the repeating unit having an alkali-soluble group is preferably from 〇 to 20 mol%, more preferably from 3 to 15 mol%, still more preferably from 5 to 10 mol%, and more preferably in the resin. All repeating units in (A) shall prevail. -29-201033733 The following is a specific embodiment of the repeating unit having the alkali-soluble group, but the present invention is not limited thereto. Rx represents a hydrogen atom, CH3, CF3 or ch2oh.

該具有至少一種選自於內酯基團、羥基、氰基及可溶 於鹼的基團之基團的重覆單元爲具有至少二個選自於內酯 基團、羥基、氰基及可溶於鹼的基團之成員的重覆單元較 佳’具有氰基及內酯基團的重覆單元更佳。特別是,具有 氰基取代在(LC1-4)的內酯結構上之結構的重覆單元較佳。 該組分(A)的樹脂進一步包括由不具有羥基或氰基之 式⑴所表示的重覆單元較佳。The repeating unit having at least one group selected from the group consisting of a lactone group, a hydroxyl group, a cyano group and a base soluble group has at least two selected from the group consisting of a lactone group, a hydroxyl group, a cyano group, and The repeating unit of the member of the alkali-soluble group is preferably more preferably a repeating unit having a cyano group and a lactone group. In particular, a repeating unit having a structure in which a cyano group is substituted with a lactone structure of (LC1-4) is preferred. The resin of the component (A) further preferably comprises a repeating unit represented by the formula (1) having no hydroxyl group or cyano group.

在式(I)中,R5代表具有至少一個環狀結構且不具有羥 基或氰基的烴基團。In the formula (I), R5 represents a hydrocarbon group having at least one cyclic structure and having no hydroxyl group or cyano group.

Ra代表氫原子、烷基或_CIl2-〇_Ra2基團,其中Ra2代 -30- 201033733 表烷基或醯基。Ra的實施例包括H、CH3及CF3。 由R5所擁有的環狀結構包括單環烴基團及多環烴基 團。該單環烴基團的實施例包括具有碳數3至12的環烷 基,諸如環戊基、環己基、環庚基及環辛基;及具有碳數 3至12的環烯基,諸如環己烯基。該單環烴基團爲具有碳 數3至7的單環烴基團較佳,環戊基或環己基更佳。 該多環烴基團包括環積聚的烴基團及交聯的環狀烴基 團。該環積聚的烴基團之實施例包括雙環己基及全氫萘 ^ 基。該交聯的烴環之實施例包括雙環的烴環,諸如蒎烷環、 萡烷環、降蒎烷環、降萡烷環及雙環辛烷環(例如,雙環 [2.2.2]辛烷環、雙環[3_2.1]辛烷環);三環烴環,諸如升布 雷烷(homobledane)環、金剛烷環、三環[5.2.1.02,6]癸烷環 及三環[4.3.1 .I2’5]十一烷環;及四環烴環,諸如四環 [4.4.0.12’5.17,1()]十二烷環及全氫-1,4-甲烷基-5,8-甲烷并 萘環。該交聯的環狀烴環亦包括稠和的環狀烴環,例如, 藉由稠和複數個5至8員環烷環所形成的稠環,諸如全氫 萘(萘烷)環、全氫蒽環、全氫菲環、全氫乙烷合萘環、全 氫莽環、全氫茚環及全氫葩環。 該交聯的環狀烴環之較佳實施例包括降范基、金剛院 基、雙環辛烷基及三環[5.2.1. 02>6]癸烷基,且降萡基及金 剛烷基更佳。 此脂環烴基團可具有取代基,及該取代基的較佳實施 例包括鹵素原子、烷基、由保護基團保護的經基及由保護 基團保護的胺基。該鹵素原子爲溴原子、氯原子或氟原子 -31- 201033733 較佳;及該烷基爲甲基、乙基、丁基或三級丁基較佳。此 烷基可進一步具有取代基,及該烷基可進一步具有的取代 基包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。 該保護基團的實施例包括烷基、環烷基、芳烷基、經 取代的甲基、經取代的乙基、烷氧基羰基及芳烷氧基羰基。 該烷基爲具有碳數1至4的烷基較佳;該經取代的甲基爲 甲氧基甲基、甲氧基硫甲基、苄氧基甲基、三級丁氧基甲 基或2-甲氧基乙氧基甲基較佳;該經取代的乙基爲1-乙氧 Ο 基乙基或1-甲基-1·甲氧基乙基較佳;該醯基爲具有碳數1 至6的脂肪族醯基較佳,諸如甲醯基、乙醯基、丙醯基、 丁_基、異丁醯基、戊醯基及特戊醯基;及該烷氧基羰基 爲具有碳數2至4的烷氧基羰基較佳。 該由不具有羥基或氰基之式(I)所表示的重覆單元之含 量從0至40莫耳%較佳,從〇至20莫耳%更佳,以在該樹 脂(A)中的全部重覆單元爲準。 〇 下列提出由式(I)所表示的重覆單元之特定實施例,但 w 是本發明不限於此。在該等式中,Ra代表H、CH3或CF3。Ra represents a hydrogen atom, an alkyl group or a _CIl2-〇_Ra2 group, wherein Ra2 represents -30-201033733 an alkyl group or a fluorenyl group. Examples of Ra include H, CH3, and CF3. The cyclic structure possessed by R5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having a carbon number of 3 to 12, such as a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group; and a cycloalkenyl group having a carbon number of 3 to 12, such as a ring. Hexenyl. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having 3 to 7 carbon atoms, more preferably a cyclopentyl group or a cyclohexyl group. The polycyclic hydrocarbon group includes a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group. Examples of the hydrocarbon group accumulated in the ring include a dicyclohexyl group and a perhydronaphthalenyl group. Examples of the crosslinked hydrocarbon ring include bicyclic hydrocarbon rings such as a decane ring, a decane ring, a norbornane ring, a norbornane ring, and a bicyclooctane ring (for example, a bicyclo[2.2.2]octane ring. , bicyclo[3_2.1]octane ring); tricyclic hydrocarbon ring, such as homobredane ring, adamantane ring, tricyclo[5.2.1.02,6]nonane ring and tricyclic ring [4.3.1. I2'5] undecane ring; and tetracyclic hydrocarbon ring, such as tetracyclo[4.4.0.12'5.17,1()]dodecane ring and perhydro-1,4-methylalkyl-5,8-methane Naphthalene ring. The crosslinked cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring, for example, a fused ring formed by condensing a plurality of 5 to 8 membered cycloalkane rings, such as a perhydronaphthalene (decalin) ring, Hydroquinone ring, perhydrophenanthrene ring, perhydroethane naphthalene ring, perhydroindene ring, perhydroindole ring and perhydroindole ring. Preferred examples of the crosslinked cyclic hydrocarbon ring include a descending group, a diamond base, a bicyclooctyl group, and a tricyclo[5.2.1.02>6]decyl group, and a thiol group and an adamantyl group. Better. The alicyclic hydrocarbon group may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a trans group protected by a protecting group, and an amine group protected by a protecting group. The halogen atom is preferably a bromine atom, a chlorine atom or a fluorine atom -31 to 201033733; and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The alkyl group may further have a substituent, and the substituent which the alkyl group may further have includes a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. Examples of such protecting groups include alkyl groups, cycloalkyl groups, aralkyl groups, substituted methyl groups, substituted ethyl groups, alkoxycarbonyl groups, and aralkyloxycarbonyl groups. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms; the substituted methyl group is a methoxymethyl group, a methoxythiomethyl group, a benzyloxymethyl group, a tertiary butoxymethyl group or 2-methoxyethoxymethyl is preferred; the substituted ethyl group is 1-ethoxyanthoylethyl or 1-methyl-1.methoxyethyl; the fluorenyl group has carbon The aliphatic sulfhydryl groups of 1 to 6 are preferably, such as a methyl fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl group, an isobutyl fluorenyl group, a pentamidine group and a pentamidine group; and the alkoxycarbonyl group has carbon Alkoxycarbonyl groups of 2 to 4 are preferred. The content of the repeating unit represented by the formula (I) having no hydroxyl group or cyano group is preferably from 0 to 40 mol%, more preferably from 〇 to 20 mol%, in the resin (A). All repeating units shall prevail.特定 A specific embodiment of the repeating unit represented by the formula (I) is proposed below, but w is not limited thereto. In the equation, Ra represents H, CH3 or CF3.

-32- 201033733 爲了控制抗乾蝕刻性、對標準顯影劑的適應性、對基 材的黏附力、光阻外形及光阻通常需要的性質(諸如解析 度、耐熱性及靈敏度)之目的,除了上述描述的重覆結構單 元外,該組分(A)的樹脂可包括多種重覆結構單元。 此重覆結構單元的實施例包括(但不限於)與描述在下 列的單體相應之重覆結構單元。 由於此重覆結構單元,特別可巧妙地控制該組分(A) 的樹脂所需要之性能: (1) 在塗布溶劑中的溶解度; (2) 薄膜形成性質(玻璃轉換點); (3) 鹼性顯影能力; (4) 薄膜損失(親水性、疏水性或可溶於鹼的基團之選 擇); (5) 未曝光區域對基材之黏附力; (6) 抗乾蝕刻性: 及其類似性質。 該單體的實施例包括選自於下列具有一個可加成聚合 的不飽和鍵之化合物:丙烯酸酯類、甲基丙烯酸酯類、丙 烯醯胺類、甲基丙烯醯胺類、烯丙基化合物、乙烯醚類及 乙烯基酯類。 除了這些外,可共聚合可和與上述描述的多種重覆結 構單元相應之單體共聚合的可加成聚合之不飽和化合物。 在該組分(A)的樹脂中,適當地決定所包含之各別重覆 結構單元的莫耳比率,以控制光阻的抗乾蝕刻性、對標準 -33- 201033733 顯影劑的適應性、對基材的黏附力、光阻外形及光阻通常 需要的性能(諸如解析度、耐熱性及靈敏度)。 在將本發明之感光化射線或感放射線樹脂組成物使用 於ArF曝光的實例中,考慮到對ArF光之穿透度,該組分 (A)的樹脂不具有芳香基團較佳(特別在該樹脂中,含芳香 基團的重覆單元之比率爲5莫耳%或較少較佳,3莫耳%或 較少更佳及理想爲〇莫耳%,也就是說,不含芳香基團), 及該樹脂(A)具有單環或多環的脂環烴結構較佳。 同樣地,本發明之組分(A)的樹脂爲與樹脂(C)不同之 © 樹脂較佳,及考慮到與該樹脂(C)的相容性,不包含氟原子 及砂原子較佳。 該組分(A)的樹脂爲全部的重覆單元由以(甲基)丙烯 酸酯爲基礎的重覆單元組成之樹脂較佳。於此實例中,全 部重覆單元可爲以甲基丙烯酸酯爲基礎的重覆單元、全部 重覆單元可爲以丙烯酸酯爲基礎的重覆單元、或全部重覆 單元可由以甲基丙烯酸酯爲基礎的重覆單元與以丙烯酸醋 爲基礎的重覆單兀組成,但是該以丙烯酸酯爲基礎的重覆 © 單元之含量爲50莫耳%或較少較佳’以全部的重覆單元爲 準。該樹脂爲共聚合的聚合物更佳,其包含從2〇至50莫 耳%之由式(AI)所表示之以含酸可分解的基團之(甲基)丙 烯酸酯爲基礎的重覆單元、從20至50莫耳%之以含內醋 基團之(甲基)丙嫌酸醋爲基礎的重覆單元、從5至30莫耳 %之具有由羥基或氣基取代之脂環烴結構的以(甲基)丙烧 酸醋爲基礎的重覆單兀、及從0至20莫耳%之其它以(甲基) -34- 201033733 丙烯酸酯爲基礎的重覆單元。 在以KrF準分子雷射光、電子束、X射線或波長奈 米或較短的高能量束(例如,EUV)照射本發明之感光化射線 或感放射線樹脂組成物的實例中,除了由式(AI)所表示的 重覆單元外,該組分(A)的樹脂進一步包括以羥基苯乙燦爲 基礎的重覆單元較佳,且以羥基苯乙烯爲基礎的重覆單 元、由可酸分解的基團保護之以羥基苯乙烯爲基礎的重覆 單元及可酸分解的重覆單元(諸如(甲基)丙烯酸三級烷酯) ❹更佳。 該具有可酸分解的基團之重覆單元的較佳實施例包括 由三級丁氧基羰氧基苯乙烯、1-烷氧基乙氧基苯乙烯或(甲 基)丙嫌酸三級院酯組成之重覆單元。由(甲基)丙稀酸2 -院 基-2-金剛烷酯或(甲基)丙烯酸二烷基(1_金剛烷基)甲醋組 成的重覆單元更佳〃 該組分(A)的樹脂可藉由普通方法(例如,自由基聚合) 合成。該合成方法的實施例通常包括批次聚合方法,其將 〇 單體物種與起始劑溶解在溶劑中及加熱該溶液,因此達成 聚合;及滴入聚合方法,其在1至10小時內,將包含單體 物種與起始劑的溶液逐滴加入至熱溶劑。滴入聚合方法較 佳。該反應溶劑的實施例包括醚類,諸如二異丙基酸、四 氫呋喃、1,4 -二噚烷;酮類,諸如甲基乙基酮及甲基異丁 基酮;酯溶劑,諸如醋酸乙酯;醯胺溶劑,諸如二甲基甲 醯胺及二甲基乙醯胺;及之後描述能溶解本發明之組成物 的溶劑,諸如醋酸丙二醇單甲基醚酯(PGMEA,亦已知爲 -35- 201033733 1-甲氧基-2-乙醯氧基丙烷)、丙二醇單甲基醚(pgme,亦已 知爲1-甲氧基-2-丙醇)及環己酮。使用與在本發明之感光 化射線或感放射線樹脂組成物中所使用的溶劑相同之溶劑 進行聚合更佳。藉由使用此溶劑,可抑制在儲存期間產生 顆粒。 在惰性氣體環境(諸如氮或氬)中進行聚合反應較佳。 至於該聚合起始劑,使用可商業購得的自由基起始劑(例 如,以偶氮爲基礎的起始劑、過氧化物)開始聚合。該自由 基起始劑爲以偶氮爲基礎的起始劑較佳,及具有酯基團、 © 氰基或羧基之以偶氮爲基礎的起始劑較佳。該起始劑的較 佳實施例包括偶氮二異丁腈、偶氮雙二甲基戊腈及二甲基 2,2’-偶氮雙(2-甲基丙酸酯)。若須要時,額外或逐部分地 加入該起始劑。在反應完成後,將反應產物充入溶劑中, 及藉由諸如粉末或固體回收方法來回收想要的聚合物。該 反應濃度從5至5 0質量%,且從1 0至3 0質量%較佳,及 該反應溫度通常從10至150°C,且從30至120°C較佳,從 60至100°C更佳。(在此專利說明書中,質量比率等於重量 ® 比率。) 該組分(A)的樹脂之重量平均分子量從 1,〇〇〇至 200,000 較佳,從 2,000 至 20,000 更佳,從 3,000 至 15,000 又更佳,而從5,000至13,000又更佳,就聚苯乙烯藉由GPC 方法而論。當重量平均分子量從1,〇〇〇至200,000時,可防 止耐熱性、抗乾蝕刻性及顯影能力降低;及由於黏度增加’ 可防止薄膜形成性質降低。 -36- 201033733 多分散性(分子量分布)通常從1至3,且從1至2.6較 佳,從1至2更佳,從1.4至1.7又更佳。當分子量分布較 小時,解析度及光阻外形更優良,光阻圖案的側壁較平順, 及更改良粗糙度。 在本發明之感光化射線或感放射線樹脂組成物中,該 摻合之組分(A)的樹脂在全部組成物中之量從50至99質量 %較佳,從70至98質量%更佳,從70至95質量%又更佳, 以全部固體含量爲準。 在本發明中,關於該組分(A)的樹脂,可使用一種種類 或可組合著使用複數種種類(聚合物摻合物)。 [2]能在以光化射線或輻射照射後產生酸的化合物(B) 本發明之感光化射線或感放射線樹脂組成物包括能在 以光化射線或輻射照射後產生酸的化合物(於此之後有時 指爲”酸產生劑")較佳。 可使用的酸產生劑可適當地選自於下列:用於陽離子 光聚合的光起始劑、用於自由基光聚合的光起始劑、用於 染料的光去色劑、光脫色劑、已知在以光化射線或輻射照 射後產生酸及使用於微光阻或其類似物之化合物、及其混 合物。 此化合物的實施例包括重氮鹽、鐃鹽、锍鹽、鎮鹽、 醯亞胺磺酸鹽、磺酸肟、重氮二楓、二楓及磺酸鄰·硝基苄 酯。 同樣地,可使用已將此能在以光化射線或輻射照射後 產生酸的基團或化合物引進該聚合物之主或側鏈中的化合 -37- 201033733 物,例如,描述在美國專利3,849,137、德國專利3,9 1 4,407、 JP-A-63-26653 、 JP-A-55-1 64824 、 JP-A - 62 - 69263 、 JP-A-63- 1 4603 8 、 JP-A-63 - 1 63452 、 JP-A-62- 1 5 3 8 5 3 及 JP-A-63-146029中的化合物。 再者,亦可使用描述例如在美國專利3,7 7 9,7 7 8及歐洲 專利126,7 12中之能藉由光效應產生酸的化合物。 出自該酸產生劑,由下列式(ZI)、(ZII)及(ZIII)所表示 的化合物較佳。 0 II •s—R207 0 0 II ^206-S· 0 •^201 R202~S+ z~ R204—R205 R203 z-32- 201033733 In addition to the properties required for resistance to dry etching, compatibility with standard developers, adhesion to substrates, photoresist shapes, and photoresist properties such as resolution, heat resistance and sensitivity, In addition to the above-described repetitive structural unit, the resin of the component (A) may include a plurality of repetitive structural units. Embodiments of this repetitive structural unit include, but are not limited to, repetitive structural units corresponding to the monomers described below. Due to this repetitive structural unit, in particular, the properties required for the resin of the component (A) can be skillfully controlled: (1) solubility in a coating solvent; (2) film forming properties (glass transition point); (3) Alkaline developing ability; (4) Film loss (selection of hydrophilic, hydrophobic or alkali-soluble groups); (5) Adhesion of unexposed areas to the substrate; (6) Dry etching resistance: Its similar nature. Examples of the monomer include compounds selected from the group consisting of an addition polymerizable unsaturated bond: acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds , vinyl ethers and vinyl esters. In addition to these, an addition polymerizable unsaturated compound copolymerizable with a monomer corresponding to the various rectifying unit units described above may be copolymerized. In the resin of the component (A), the molar ratio of the respective repetitive structural units included is appropriately determined to control the dry etching resistance of the photoresist, the compatibility with the standard -33-201033733 developer, The adhesion to the substrate, the shape of the photoresist, and the properties normally required for the photoresist (such as resolution, heat resistance, and sensitivity). In the example in which the sensitized ray or radiation sensitive resin composition of the present invention is used for ArF exposure, the resin of the component (A) is preferably free of aromatic groups in consideration of the transmittance to ArF light (especially In the resin, the ratio of the aromatic group-containing repeating unit is 5 mol% or less, 3 mol% or less is better and ideally 〇 mol%, that is, no aromatic group The resin (A) preferably has a monocyclic or polycyclic alicyclic hydrocarbon structure. Similarly, the resin of the component (A) of the present invention is preferably a resin different from the resin (C), and in view of compatibility with the resin (C), it is preferred that the fluorine atom and the sand atom are not contained. The resin of the component (A) is preferably a resin composed of a repeating unit based on (meth) acrylate. In this example, all of the repeating units may be methacrylate-based repeating units, all of the repeating units may be acrylate-based repeating units, or all of the repeating units may be methacrylated The base-based repeating unit is composed of a repeating unit based on acrylic vinegar, but the content of the acrylate-based repeating unit is 50% by mole or less preferably 'to all of the repeating units Prevail. The resin is more preferably a copolymerized polymer, which comprises from 2 to 50 mol% of a (meth) acrylate based on the (meth) acrylate represented by the formula (AI) containing an acid-decomposable group. a unit, from 20 to 50 mol% of a repeating unit based on a (meth)acrylic acid vinegar containing an internal vinegar group, from 5 to 30 mol% of an alicyclic ring substituted with a hydroxyl group or a gas group A repeating unit based on (meth) succinic acid vinegar of a hydrocarbon structure, and a repeating unit based on (meth)-34-201033733 acrylate from 0 to 20 mol%. In the example of irradiating the sensitized ray or radiation sensitive resin composition of the present invention with KrF excimer laser light, electron beam, X-ray or wavelength nanometer or a shorter high energy beam (for example, EUV), in addition to the formula ( In addition to the repeating unit represented by AI), the resin of the component (A) further comprises a repeating unit based on hydroxyphenylene, and the hydroxystyrene-based repeating unit is decomposed by acid The group is protected by a hydroxystyrene-based repeating unit and an acid-decomposable repeating unit such as a tertiary alkyl (meth)acrylate. A preferred embodiment of the repeating unit having an acid-decomposable group includes three stages of tertiary butoxycarbonyloxystyrene, 1-alkoxyethoxystyrene or (meth)acrylic acid A repeating unit consisting of a mixture of esters. A repeating unit consisting of (meth)acrylic acid 2-homoyl-2-adamantyl ester or dialkyl (1-adamantyl)methyl methacrylate, preferably 〃 (A) The resin can be synthesized by an ordinary method (for example, radical polymerization). Examples of the synthesis method generally include a batch polymerization method in which a hydrazine monomer species and an initiator are dissolved in a solvent and heating the solution, thereby achieving polymerization; and a dropping polymerization method in 1 to 10 hours, A solution containing the monomer species and the starter is added dropwise to the hot solvent. The dropping polymerization method is preferred. Examples of the reaction solvent include ethers such as diisopropyl acid, tetrahydrofuran, 1,4-dioxane; ketones such as methyl ethyl ketone and methyl isobutyl ketone; ester solvents such as ethyl acetate An ester; a guanamine solvent such as dimethylformamide and dimethylacetamide; and a solvent which is capable of dissolving the composition of the present invention, such as propylene glycol monomethyl ether acetate (PGMEA, also known as - 35-201033733 1-methoxy-2-ethenyloxypropane), propylene glycol monomethyl ether (pgme, also known as 1-methoxy-2-propanol) and cyclohexanone. It is more preferable to carry out polymerization using the same solvent as that used in the photosensitive ray or radiation sensitive resin composition of the present invention. By using this solvent, generation of particles during storage can be suppressed. The polymerization is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As the polymerization initiator, polymerization is started using a commercially available radical initiator (e.g., an azo-based initiator, a peroxide). The free radical initiator is preferably an azo-based initiator, and an azo-based initiator having an ester group, a cyano group or a carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile and dimethyl 2,2'-azobis(2-methylpropionate). The starter is added additionally or in part, if necessary. After the reaction is completed, the reaction product is charged into a solvent, and the desired polymer is recovered by a method such as powder or solid recovery. The reaction concentration is from 5 to 50% by mass, and preferably from 10 to 30% by mass, and the reaction temperature is usually from 10 to 150 ° C, and preferably from 30 to 120 ° C, from 60 to 100 °. C is better. (In this patent specification, the mass ratio is equal to the weight® ratio.) The weight average molecular weight of the resin of this component (A) is preferably from 1, 200 to 200,000, more preferably from 2,000 to 20,000, and from 3,000 to 15,000. More preferably, from 5,000 to 13,000 is better, in terms of polystyrene by the GPC method. When the weight average molecular weight is from 1, 〇〇〇 to 200,000, heat resistance, dry etching resistance, and developing ability can be prevented from being lowered; and since the viscosity is increased, the film formation property can be prevented from being lowered. -36- 201033733 The polydispersity (molecular weight distribution) is usually from 1 to 3, and preferably from 1 to 2.6, more preferably from 1 to 2, still more preferably from 1.4 to 1.7. When the molecular weight distribution is small, the resolution and the resistive shape are better, the sidewalls of the photoresist pattern are smoother, and the good roughness is changed. In the sensitized ray or radiation sensitive resin composition of the present invention, the amount of the resin of the blended component (A) is preferably from 50 to 99% by mass, more preferably from 70 to 98% by mass, based on the total composition. From 70 to 95% by mass, more preferably, based on the total solids content. In the present invention, as the resin of the component (A), one kind or a plurality of kinds (polymer blend) may be used in combination. [2] A compound capable of generating an acid after irradiation with actinic rays or radiation (B) The sensitized ray or radiation-sensitive resin composition of the present invention includes a compound capable of generating an acid after irradiation with actinic rays or radiation (here) It is sometimes referred to as "acid generator". It is preferable to use an acid generator which can be suitably selected from the following: a photoinitiator for cationic photopolymerization, a photoinitiator for radical photopolymerization Agents, photodegraders for dyes, photodecolorizers, compounds known to produce acids upon irradiation with actinic radiation or radiation, and compounds useful for micro-resistance or the like, and mixtures thereof. Examples of such compounds Including diazonium salt, strontium salt, strontium salt, strontium salt, sulfhydrazine sulfonate, sulfonium sulfonate, diazo bismuth, diflavonoid and o-nitrobenzyl sulfonate. A group or compound capable of generating an acid upon irradiation with actinic radiation or radiation is introduced into the main or side chain of the polymer - 37-201033733, for example, as described in U.S. Patent 3,849,137, German Patent 3,9. 1 4,407, JP-A-63-26653, JP-A-55-1 64824, JP-A - 62-69263, JP-A-63- 1 4603 8 , JP-A-63 - 1 63452 , JP-A-62- 1 5 3 8 5 3 and compounds in JP-A-63-146029. Compounds which are capable of generating an acid by photoeffects, such as those described in U.S. Patent No. 3,7,7,7,7,8, and European Patent No. 126,7,12, can also be used. From the acid generator, by the following formula (ZI), The compounds represented by ZII) and (ZIII) are preferred. 0 II • s—R207 0 0 II ^206-S· 0 • ^201 R202~S+ z~ R204—R205 R203 z

Z1IIZ1II

ZI ZII 在式(ZI)中,R2Q1、R2 02及R2Q3各者各自獨立地代表 有機基團。 在作爲R2〇l、R202及R2 0 3的有機基團中之碳數通常從 1至30,且從1至20較佳。 出自R201至R2Q3的二個成員可結合以形成環結構’及 ◎ 該環可包括氧原子、硫原子、酯鍵、醯胺鍵或羰基。藉由 W 結合出自R2Q1至R2Q3的二個成員所形成的基團之實施例包 括伸烷基(例如,伸丁基、伸戊基)。 代表非親核性陰離子。 該作爲z —之非親核性陰離子的實施例包括磺酸鹽陰離 子、羧酸鹽陰離子、颯基醯亞胺陰離子、雙(烷基颯基)醯 亞胺陰離子及三(烷基颯基)甲基陰離子。 該非親核性陰離子爲具有極低造成親核性反應能力的 -38- 201033733 陰離子,及由於分子內親核性反應,此陰離子可抑制隨著 時效分解。由於此陰離子,光阻的時效穩定性提高。 該磺酸鹽陰離子的實施例包括脂肪族磺酸鹽陰離子、 芳香族磺酸鹽陰離子及樟腦磺酸鹽陰離子。 該羧酸鹽陰離子的實施例包括脂肪族羧酸鹽陰離子、 芳香族羧酸鹽陰離子及芳烷基羧酸鹽陰離子。 在該脂肪族磺酸鹽陰離子中的脂肪族部分可爲烷基或 環烷基,但是具有碳數1至30的烷基或具有碳數3至30 〇 的環烷基較佳,及其實施例包括甲基、乙基、丙基、異丙 基、正丁基、異丁基、二級丁基、戊基、新戊基、己基、 庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷 基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷 基、十九烷基、廿烷基、環丙基、環戊基、環己基、金剛 烷基、降萡基及萡基。 在該芳香族磺酸鹽陰離子中的芳香基團爲具有碳數6 至14的芳基較佳,及其實施例包括苯基、甲苯基及萘基。 ^ 在該脂肪族磺酸鹽陰離子及芳香族磺酸鹽陰離子中的 烷基、環烷基及芳基各者可具有取代基。在該脂肪族磺酸 鹽陰離子及芳香族磺酸鹽陰離子中的烷基、環烷基及芳基 之取代基的實施例包括硝基、鹵素原子(例如,氟、氯、溴、 碘)、羧基、羥基、胺基、氰基、烷氧基(具有碳數1至15 較佳)、環烷基(具有碳數3至15較佳)、芳基(具有碳數6 至14較佳)、烷氧基羰基(具有碳數2至7較佳)、醯基(具 有碳數2至12較佳)、烷氧基羰基氧基(具有碳數2至7較 -39- 201033733 佳)、烷硫基(具有碳數1至15較佳)、烷基楓基(具有碳數 1至15較佳)、烷基亞胺基颯基(具有碳數丨至15較佳)、 芳基氧基碾基(具有碳數6至20較佳)、烷基芳基氧基楓基 (具有碳數7至20較佳)、環烷基芳基氧基碾基(具有碳數 10至20較佳)、烷基氧基烷基氧基(具有碳數5至20較佳) 及環烷基烷基氧基烷基氧基(具有碳數8至20較佳)。至於 在每個基團中的芳基或環結構,該取代基的實施例進一步 包括烷基(具有碳數1至15較佳)。 在該脂肪族羧酸鹽陰離子中的脂肪族部分之實施例包 括與在該脂肪族磺酸鹽陰離子中的烷基及環烷基相同之那 些。 在該芳香族羧酸鹽陰離子中的芳香基團之實施例包括 與在該芳香族磺酸鹽陰離子中的芳基相同之那些。 在該芳烷基羧酸鹽陰離子中的芳烷基爲具有碳數6至 12之芳烷基較佳,及其實施例包括苄基、苯乙基、萘基甲 基、萘基乙基及萘基丁基。 在該脂肪族羧酸鹽陰離子、芳香族羧酸鹽陰離子及芳 © 烷基羧酸鹽陰離子中的烷基、環烷基、芳基及芳烷基各者 可具有取代基。在該脂肪族羧酸鹽陰離子、芳香族羧酸鹽 陰離子及芳烷基羧酸鹽陰離子中的烷基、環烷基、芳基及 芳烷基之取代基的實施例包括與在該芳香族磺酸鹽陰離子 中的鹵素原子、烷基、環烷基、烷氧基及烷硫基相同之那 些 〇 該颯基醯亞胺陰離子的實施例包括糖精陰離子。 -40- 201033733 在該雙(烷基颯基)醯亞胺陰離子及三(烷基i 陰離子中的烷基爲具有碳數1至5的烷基較佳, 例包括甲基、乙基、丙基、異丙基、正丁基、異 級丁基、戊基及新戊基。此烷基的取代基之實施 素原子、經鹵素原子取代的烷基、烷氧基、烷硫 氧基碾基、芳基氧基碾基及環烷基芳基氧基颯基 原子取代的烷基較佳。 該非親核性陰離子的其它實施例包括氟化的 〇 的硼及氟化的銻。 該之非親核性陰離子爲在磺酸的α-位置 子取代之脂肪族磺酸鹽陰離子、由氟原子或含氟 取代的芳香族磺酸鹽陰離子、具有烷基由氟原子 (烷基颯基)醯亞胺陰離子、或具有烷基由氟原子 (烷基碾基)甲基陰離子較佳。該非親核性陰離子 數4至8的全氟脂肪族磺酸鹽陰離子或具有氟原 酸鹽陰離子更佳,九氟丁烷磺酸鹽陰離子、全氟 〇 鹽陰離子、五氟苯磺酸鹽陰離子或3,5-雙(三氟 酸鹽陰離子又更佳。ZI ZII In the formula (ZI), each of R2Q1, R2 02 and R2Q3 independently represents an organic group. The carbon number in the organic group as R2〇1, R202 and R2 0 3 is usually from 1 to 30, and preferably from 1 to 20. Two members from R201 to R2Q3 may be bonded to form a ring structure ' and ◎ The ring may include an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbonyl group. Examples of groups formed by combining two members derived from R2Q1 to R2Q3 include an alkylene group (e.g., butyl group, pentyl group). Represents a non-nucleophilic anion. Examples of the non-nucleophilic anion as z include a sulfonate anion, a carboxylate anion, a mercaptoquinone anion, a bis(alkylindenyl)quinone anion, and a tris(alkylfluorenyl) group. Methyl anion. The non-nucleophilic anion is an -38 to 201033733 anion having a very low nucleophilic reactivity, and the anion inhibits decomposition with age due to intramolecular nucleophilic reaction. Due to this anion, the aging stability of the photoresist is improved. Examples of the sulfonate anion include an aliphatic sulfonate anion, an aromatic sulfonate anion, and a camphorsulfonate anion. Examples of the carboxylate anion include an aliphatic carboxylate anion, an aromatic carboxylate anion, and an aralkyl carboxylate anion. The aliphatic moiety in the aliphatic sulfonate anion may be an alkyl group or a cycloalkyl group, but an alkyl group having 1 to 30 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms is preferred, and its implementation Examples include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, secondary butyl, pentyl, neopentyl, hexyl, heptyl, octyl, decyl, decyl, ten Monoalkyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, decyl, cyclopropane Base, cyclopentyl, cyclohexyl, adamantyl, norbornyl and fluorenyl. The aromatic group in the aromatic sulfonate anion is preferably an aryl group having from 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group and a naphthyl group. ^ Each of the alkyl group, the cycloalkyl group and the aryl group in the aliphatic sulfonate anion and the aromatic sulfonate anion may have a substituent. Examples of the substituent of the alkyl group, the cycloalkyl group and the aryl group in the aliphatic sulfonate anion and the aromatic sulfonate anion include a nitro group, a halogen atom (for example, fluorine, chlorine, bromine, iodine), A carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (having preferably a carbon number of 3 to 15), and an aryl group (having a carbon number of 6 to 14 are preferred). Alkoxycarbonyl (preferably having 2 to 7 carbon atoms), mercapto (preferably having 2 to 12 carbon atoms), alkoxycarbonyloxy group (having a carbon number of 2 to 7 and preferably -39 to 201033733), An alkylthio group (having preferably a carbon number of 1 to 15), an alkyl maple group (having preferably a carbon number of 1 to 15), an alkyl imino fluorenyl group (having a carbon number of preferably 15), an aryl oxygen group Base mill base (having a carbon number of 6 to 20 is preferred), alkylaryloxy maple group (having a carbon number of 7 to 20 is preferred), cycloalkylaryloxy running base (having a carbon number of 10 to 20) Further, an alkyloxyalkyloxy group (having preferably 5 to 20 carbon atoms) and a cycloalkylalkyloxyalkyloxy group (having preferably 8 to 20 carbon atoms). As for the aryl or ring structure in each group, the embodiment of the substituent further includes an alkyl group (having preferably a carbon number of 1 to 15). Examples of the aliphatic moiety in the aliphatic carboxylate anion include the same alkyl groups and cycloalkyl groups in the aliphatic sulfonate anion. Examples of the aromatic group in the aromatic carboxylate anion include the same as those in the aromatic sulfonate anion. The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group and Naphthylbutyl. Each of the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group in the aliphatic carboxylate anion, the aromatic carboxylate anion and the aryl © alkyl carboxylate anion may have a substituent. Examples of substituents of alkyl, cycloalkyl, aryl and aralkyl groups in the aliphatic carboxylate anion, aromatic carboxylate anion and aralkyl carboxylate anion include and Examples of the sulfonate anion having the same halogen atom, alkyl group, cycloalkyl group, alkoxy group and alkylthio group as the anthracene quinone anion include saccharin anions. -40-201033733 Preferably, the alkyl group in the bis(alkylindenyl) quinone anion and the tri(alkyl i anion is an alkyl group having a carbon number of 1 to 5, and examples include methyl, ethyl, and propyl groups. Base, isopropyl, n-butyl, isobutyl, pentyl and neopentyl. The substituent atom of this alkyl group, the alkyl group substituted by a halogen atom, the alkoxy group, the alkylthio group The alkyl group substituted with a aryloxy group and a cycloalkylaryloxyfluorenyl group is preferred. Other examples of the non-nucleophilic anion include fluorinated bismuth boron and fluorinated ruthenium. The non-nucleophilic anion is an aliphatic sulfonate anion substituted at the α-position of the sulfonic acid, an aromatic sulfonate anion substituted by a fluorine atom or fluorine, and having an alkyl group derived from a fluorine atom (alkyl sulfhydryl group) The quinone imine anion, or having an alkyl group derived from a fluorine atom (alkyl group) methyl anion. The non-nucleophilic anion having a number of 4 to 8 perfluoroaliphatic sulfonate anions or having a fluoroorthoester anion Good, nonafluorobutane sulfonate anion, perfluoroanthracene anion, pentafluorobenzene sulfonate anion or 3,5- (Trifluoromethyl anions and better.

該作爲R2〇1、R2 0 2及R2 0 3的有機基團之實方 之後描述的化合物(ZI-1)至(ZI-4)中之相應的基D 該化合物可爲具有複數個由式(ZI)所表示的 合物,例如,具有在由式(ZI)所表示的化合物中 R2〇3的至少一個鍵結至在由式(ZI)所表示的另-中之Κ·201至R2G3的至少一個之結構的化合物。 風基)甲基 及其實施 丁基、二 例包括鹵 基、院基 ,且經氟 磷、氟化 處由氟原 原子基團 取代的雙 取代的三 爲具有碳 :子的苯磺 辛烷磺酸 甲基)苯磺 i例包括在 g 〇 結構之化 之β·2 0 1至 •種化合物 -41- 201033733 在式(ZII)及(ZIII)中,R2〇4至R2 07各者各自獨立地代 表芳基、烷基或環烷基。 該R204至R2G7的芳基爲苯基或萘基較佳,苯基更佳。 該R2〇4至R2G7的芳基可爲具有雜環結構而包含氧原子、氮 原子、硫原子或其類似原子的芳基。該具有雜環結構的芳 基之實施例包括吡咯殘基(藉由從吡咯移除一個氫原子所 形成的基團)、呋喃殘基(藉由從呋喃移除一個氫原子所形 成的基團)、噻吩殘基(藉由從噻吩移除一個氫原子所形成 的基團)、吲哚殘基(藉由從吲哚移除一個氫原子所形成的 © 基團)、苯并呋喃殘基(藉由從苯并呋喃移除一個氫原子所 形成的基團)及苯并噻吩殘基(藉由從苯并噻吩移除一個氫 原子所形成的基團)。 在R204至R207中的烷基及環烷基爲具有碳數1至10 的線性或分支烷基(例如,甲基、乙基、丙基、丁基、戊基) 及具有碳數3至10的環烷基(例如,環戊基、環己基、降 萡基)較佳。 該R2G4至R2Q7的芳基、烷基及環烷基各者可具有取代 ® 基。該R204至R207的芳基、烷基及環烷基可具有的取代基 之實施例包括烷基(例如,具有碳數1至15)、環烷基(例如, 具有碳數3至15)、芳基(例如,具有碳數6至15)、烷氧基 (例如,具有碳數1至15)、鹵素原子、羥基及苯硫基。 Z_代表非親核性陰離子,及其實施例與在式(ZI)中的那 些非親核性陰離子Z_相同。 至於該組分(ZI),描述在下列的化合物(ZI-1)至(ZI-4) -42- 201033733 更佳》 該化合物(ΖΙ-l)爲在式(zi)中的R2()1至R2Q3之至少~ 個爲芳基的芳基锍化合物,也就是說,具有芳基銃作爲陽 離子的化合物。 在該芳基锍化合物中,R2G1至R2G3全部可爲芳基,或 R2(M至r2Q3的一部分可爲芳基與剩餘爲烷基或環烷基。 該芳基鏑化合物的實施例包括三芳基鏑化合物、二芳 基烷基鏑化合物、芳基二烷基毓化合物、二芳基環烷基锍 〇 化合物及芳基二環烷基锍化合物。 在該芳基锍化合物中的芳基爲苯基或萘基較佳,苯基 更佳。該芳基可爲具有雜環結構而包含氧原子、氮原子、 硫原子或其類似原子的芳基。該具有雜環結構的芳基之實 施例包括吡咯殘基(藉由從吡咯移除一個氫原子所形成的 基團)、呋喃殘基(藉由從呋喃移除一個氫原子所形成的基 團)、噻吩殘基(藉由從唾吩移除一個氫原子所形成的基 團)、吲哚殘基(藉由從吲哚移除一個氫原子所形成的基 〇 團)、苯并呋喃殘基(藉由從苯并呋喃移除一個氫原子所形 成的基團)及苯并噻吩殘基(藉由從苯并噻吩移除一個氫原 子所形成的基團)。在該芳基銃化合物具有二或更多個芳基 的實例中,這二或更多個芳基可相同或不同。 若須要時,存在於該芳基锍化合物中的烷基或環烷基 爲具有碳數1至15的線性或分支烷基或具有碳數3至15 的環烷基較佳,及其實施例包括甲基、乙基、丙基、正丁 基、二級丁基、三級丁基、環丙基、環丁基及環己基。 -43- 201033733 該R2〇l至R2〇3的芳基、烷基及環烷基各者可具有下列 作爲取代基:烷基(例如,具有碳數1至丨5 )、環烷基(例如, 具有碳數3至I5)、芳基(例如,具有碳數6至14)、烷氧基 (例如’具有碳數1至15)、鹵素原子、羥基或苯硫基。該 取代基爲具有碳數1至12的線性或分支烷基、具有碳數3 至12的環烷基、或具有碳數1至12的線性、分支或環狀 院氧基較佳’具有碳數1至4的烷基、或具有碳數1至4 的院氧基更佳。該取代基可取代至三個成員r2()i至r2()3之 任何一個,或可取代至全部這些三個成員。在r2()1至r2Q3 © 爲芳基的實例中,該取代基取代在該芳基的對-位置處較 佳。 下列描述該化合物(ZI-2)。 該化合物(ZI-2)爲在式(ZI)中的R2(n至R2〇3各者各自 獨立地代表無芳香環的有機基團之化合物。如於本文中所 使用,該芳香環包括包含雜原子的芳香環。 該作爲心”至R2〇3的無芳香環有機基團具有碳數通常 從1至30,且從1至20較佳。 © R201至R2 03各者各自獨立地代表烷基、環烷基、烯丙 基或乙烯基較佳,線性或分支的2 -側氧烷基、2 -側氧環烷 基或烷氧基羰基甲基更佳,線性或分支的2 -側氧烷基又更 佳。 該R2(n至R2D3的烷基及環烷基爲具有碳數1至10的 線性或分支烷基(例如,甲基、乙基、丙基、丁基、戊基) 及具有碳數3至10的環烷基(例如,環戊基、環己基、降 -44 - 201033733 萡基)較佳。該烷基爲2-側氧烷基或烷氧基羰基甲基更佳。 該環烷基爲2 -側氧環烷基更佳。 該2 -側氧烷基可爲線性或分支,及在上述描述的烷基 之2 -位置處具有>C = 〇的基團較佳。 該2-側氧環烷基爲在上述描述的環烷基之2_位置處具 有〉C = 0的基團較佳。 在該烷氧基羰基甲基中的烷氧基爲具有碳數1至5的 烷氧基(例如’甲氧基、乙氧基、丙氧基、丁氧基、戊氧基) 較佳。 R2(n至R2G3各者可進一步由鹵素原子、烷氧基(例如, 具有碳數1至5)、羥基、氰基或硝基取代。 該化合物(ZI-3)爲由下列式(ZI-3)所表示的化合物,及 此爲具有苯醯甲锍鹽結構的化合物。The compound (ZI-1) to (ZI-4) described later as the solid of the organic group of R2〇1, R2 0 2 and R2 0 3 may have a plurality of compounds The compound represented by (ZI), for example, has at least one bond of R 2 〇 3 in the compound represented by the formula (ZI) to 另 201 to R 2 G 3 in the other - represented by the formula (ZI) At least one structure of the compound. Methyl group and its butyl group, two cases including a halogen group, a hospital group, and a disubstituted three substituted by a fluorine atom in the fluorine atom and a fluorinated atom is a benzenesulfonane having a carbon: The sulfonic acid methyl)benzenesulfonate i is included in the g 〇 structure of β·2 0 1 to • the compound -41- 201033733 In the formulas (ZII) and (ZIII), each of R2〇4 to R2 07 Independently represents an aryl group, an alkyl group or a cycloalkyl group. The aryl group of R204 to R2G7 is preferably a phenyl group or a naphthyl group, and the phenyl group is more preferred. The aryl group of R2〇4 to R2G7 may be an aryl group having a heterocyclic structure and containing an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by removing a hydrogen atom from a pyrrole), a furan residue (a group formed by removing a hydrogen atom from a furan) , a thiophene residue (a group formed by removing a hydrogen atom from thiophene), a hydrazine residue (a group formed by removing a hydrogen atom from hydrazine), a benzofuran residue (a group formed by removing one hydrogen atom from benzofuran) and a benzothiophene residue (a group formed by removing one hydrogen atom from benzothiophene). The alkyl group and the cycloalkyl group in R204 to R207 are a linear or branched alkyl group having a carbon number of 1 to 10 (for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group) and having a carbon number of 3 to 10 A cycloalkyl group (e.g., cyclopentyl, cyclohexyl, norbornyl) is preferred. Each of the aryl group, the alkyl group and the cycloalkyl group of R2G4 to R2Q7 may have a substituted group. Examples of the substituent which the aryl group, the alkyl group and the cycloalkyl group of R204 to R207 may have include an alkyl group (for example, having a carbon number of 1 to 15) and a cycloalkyl group (for example, having a carbon number of 3 to 15). An aryl group (for example, having a carbon number of 6 to 15), an alkoxy group (for example, having a carbon number of 1 to 15), a halogen atom, a hydroxyl group, and a phenylthio group. Z_ represents a non-nucleophilic anion, and the examples thereof are the same as those of the non-nucleophilic anion Z_ in the formula (ZI). As for the component (ZI), it is described in the following compounds (ZI-1) to (ZI-4) -42 - 201033733. The compound (ΖΙ-1) is R2()1 in the formula (zi) At least one aryl fluorene compound which is an aryl group to R2Q3, that is, a compound having an aryl hydrazine as a cation. In the arylsulfonium compound, R2G1 to R2G3 may all be an aryl group, or R2 (a part of M to r2Q3 may be an aryl group and the remainder is an alkyl group or a cycloalkyl group. Examples of the arylsulfonium compound include a triaryl group An anthracene compound, a diarylalkylhydrazine compound, an aryldialkylfluorene compound, a diarylcycloalkylfluorene compound, and an arylbicycloalkylsulfonium compound. The aryl group in the arylsulfonium compound is benzene The phenyl group is preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure and containing an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure Including a pyrrole residue (a group formed by removing a hydrogen atom from a pyrrole), a furan residue (a group formed by removing a hydrogen atom from a furan), a thiophene residue (by sputum) Removal of a group formed by a hydrogen atom), a residue of hydrazine (a group formed by removing a hydrogen atom from hydrazine), a benzofuran residue (by removing one from benzofuran) a group formed by a hydrogen atom) and a benzothiophene residue (by benzothiazide) a group formed by removing a hydrogen atom. In the case where the aryl fluorene compound has two or more aryl groups, the two or more aryl groups may be the same or different. If necessary, present in The alkyl or cycloalkyl group in the arylsulfonium compound is preferably a linear or branched alkyl group having 1 to 15 carbon atoms or a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a methyl group and an ethyl group. , propyl, n-butyl, secondary butyl, tert-butyl, cyclopropyl, cyclobutyl and cyclohexyl. -43- 201033733 aryl, alkyl and naphthenic groups of R2〇1 to R2〇3 The group may have the following substituents: an alkyl group (for example, having a carbon number of 1 to 丨5), a cycloalkyl group (for example, having a carbon number of 3 to I5), and an aryl group (for example, having a carbon number of 6 to 14). Alkoxy (for example, 'having a carbon number of 1 to 15), a halogen atom, a hydroxyl group or a phenylthio group. The substituent is a linear or branched alkyl group having a carbon number of 1 to 12 and a cycloalkane having a carbon number of 3 to 12. The base, or a linear, branched or cyclic alkoxy group having a carbon number of 1 to 12 is preferably 'having an alkyl group having 1 to 4 carbon atoms, or a group having a carbon number of 1 to 4, more preferably. It may be substituted to any one of the three members r2()i to r2()3, or may be substituted for all three members. In the case where r2()1 to r2Q3 © is an aryl group, the substituent is substituted in the The p-position of the aryl group is preferred. The compound (ZI-2) is described below. The compound (ZI-2) is R2 in the formula (ZI) (n to R2〇3 each independently represents no fragrance) a compound of an organic group of a ring. As used herein, the aromatic ring includes an aromatic ring containing a hetero atom. The aromatic ring-free organic group as a core to R2〇3 has a carbon number of usually from 1 to 30, And preferably from 1 to 20. © R201 to R2 03 each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, a linear or branched 2-side oxyalkyl group, a 2-side oxygen group. A cycloalkyl or alkoxycarbonylmethyl group is more preferred, and a linear or branched 2-sided oxyalkyl group is more preferred. The alkyl group and the cycloalkyl group of R2 (n to R2D3 are a linear or branched alkyl group having a carbon number of 1 to 10 (for example, methyl group, ethyl group, propyl group, butyl group, pentyl group) and having a carbon number of 3 to A cycloalkyl group of 10 (e.g., a cyclopentyl group, a cyclohexyl group, a -44 - 201033733 fluorenyl group) is preferred. The alkyl group is preferably a 2-sided oxyalkyl group or an alkoxycarbonylmethyl group. More preferably, it is a 2-oxocycloalkyl group. The 2-sided oxyalkyl group may be linear or branched, and a group having > C = 〇 at the 2-position of the alkyl group described above is preferred. The -oxycycloalkyl group is preferably a group having >C = 0 at the 2-position of the cycloalkyl group described above. The alkoxy group in the alkoxycarbonylmethyl group has a carbon number of 1 to 5. Alkoxy groups (e.g., 'methoxy, ethoxy, propoxy, butoxy, pentyloxy) are preferred. R2 (n to R2G3 each may further be a halogen atom, an alkoxy group (for example, having The compound (ZI-3) is a compound represented by the following formula (ZI-3), and is a compound having a benzoguanidine salt structure.

在式(ZI-3)中,Ri。至R5e各者各自獨立地代表氫原子、 烷基、環烷基、芳基、烷氧基、芳氧基、烷氧基羰基、烷 基羰氧基、環烷基羰基氧基、羥基、硝基或鹵素原子。 尺^及R7c各者各自獨立地代表氫原子、烷基或環烷基。 1^及Ry各者各自獨立地代表烷基、環烷基、烯丙基或 乙烯基。 -45- 201033733 出自Rlc至R5e、R6e與R7c對及心與Ry對之任何二或 更多個成員可結合在一起以各別形成環結構。此環結構可 包含氧原子、硫原子、酯鍵或醯胺鍵。 上述的環結構包括芳香族或非芳香族烴環、芳香族或 非芳香族雜環、及藉由結合二或更多個這些環所形成的多 環稠環。該環結構爲3至10員環,且4至8員環較佳,5 或6員環更佳》 藉由結合出自Ric至R5c、R6c與R7c對及與Ry對之 任何二或更多個成員所形成的基團之實施例包括伸丁基及 © 伸戊基。 代表非親核性陰離子,及其實施例與在式(ZI)中的 那些非親核性陰離子Z·相同。 該作爲Rle至R7。的烷基可爲線性或分支,及例如爲具 有碳數1至20的烷基,且具有碳數1至12的線性或分支 烷基(例如,甲基、乙基、線性或分支丙基、線性或分支丁 基、線性或分支戊基)較佳。該環烷基爲例如具有碳數3至 Ο 8的環烷基(例如,環戊基、環己基)。 該作爲Rle至R5e的芳基爲具有碳數5至15的芳基較 佳,及其實施例包括苯基及萘基。 該作爲Rle至R5e的烷氧基可爲線性、分支或環狀’及 爲例如具有碳數1至10的烷氧基,且具有碳數1至5的線 性或分支烷氧基(例如,甲氧基、乙氧基、線性或分支丙氧 基、線性或分支丁氧基、線性或分支戊氧基)或具有碳數3 至8的環狀烷氧基(例如,環戊氧基、環己氧基)較佳。 -46 - 201033733 在該作爲Ri。至R5e的烷氧基羰基中之烷氧基的特定實 施例與上述Rlc至R5e的烷氧基之特定實施例相同。 在該作爲R!。至R5。的烷基羰氧基中之烷基的特定實施 例與上述Rle至R5。的烷基之特定實施例相同。 在該作爲R!。至R5。的環烷基羰基氧基中之環烷基的特 定實施例與上述Rle至R5e的環烷基之特定實施例相同。 在該作爲Ri。至R5e的芳氧基中之芳基的特定實施例與 上述Rle至R5。的芳基之特定實施例相同。 ® •。至R5。之任何一個爲線性或分支烷基、環烷基或線 性、分支或環狀烷氧基的化合物較佳,及Rle至R5。的碳數 總和從2至15之化合物更佳。由於此化合物,更提高溶劑 溶解度及可抑制在儲存期間產生顆粒。 可藉由結合R!。至R5。之任何二或更多個成員形成的環 結構爲5或6員環較佳,6員環(例如,苯基環)更佳。 該作爲1^及Ry的烷基及環烷基之實施例與在Ric至 ^ R7c中的那些烷基及環烷基相同。在這些當中,2-側氧烷 ❹ 基、2-側氧環烷基及烷氧基羰基甲基較佳。 該2·側氧烷基及2-側氧環烷基的實施例包括在該作爲 Rlc至R7e的烷基或環烷基之2-位置處具有>C = 0的基團。 在該烷氧基羰基甲基中的烷氧基之實施例與在Ric至 R5c中的那些烷氧基相同。 1^及Ry各者爲具有碳數4或更多的烷基或環烷基較 佳,6或更多更佳,8或更多又更佳。 該烯丙基無特別限制,但是未經取代的烯丙基或由單 -47- 201033733 環或多環的環烷基(具有碳數3至10的環烷基較佳)取代之 烯丙基較佳。 該乙烯基無特別限制,但是未經取代的乙烯基或由單 環或多環的環烷基(具有碳數3至10的環烷基較佳)取代之 乙烯基較佳。 該化合物(ZI-4)爲一由下列式(ZI-4)所表示的化合物:In the formula (ZI-3), Ri. Each of R5e independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a hydroxyl group, a nitrate Base or halogen atom. Each of the ruthenium and R7c independently represents a hydrogen atom, an alkyl group or a cycloalkyl group. Each of 1^ and Ry independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group. -45- 201033733 Any two or more members from the Rlc to R5e, R6e and R7c pairs and the core and Ry pairs may be combined to form a ring structure. This ring structure may contain an oxygen atom, a sulfur atom, an ester bond or a guanamine bond. The above ring structure includes an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocyclic ring, and a polycyclic fused ring formed by combining two or more of these rings. The ring structure is a 3 to 10 membered ring, and a 4 to 8 membered ring is preferred, and a 5 or 6 membered ring is preferred by combining any two or more of Ric to R5c, R6c and R7c pairs, and Ry pairs. Examples of groups formed by members include butyl and pentyl groups. Representative of non-nucleophilic anions, and examples thereof, are the same as those of the non-nucleophilic anion Z. in formula (ZI). This is as Rle to R7. The alkyl group may be linear or branched, and is, for example, an alkyl group having a carbon number of 1 to 20 and having a linear or branched alkyl group having 1 to 12 carbon atoms (for example, a methyl group, an ethyl group, a linear or branched propyl group, Linear or branched butyl, linear or branched pentyl groups are preferred. The cycloalkyl group is, for example, a cycloalkyl group having a carbon number of 3 to ( 8 (e.g., a cyclopentyl group, a cyclohexyl group). The aryl group as Rle to R5e is preferably an aryl group having 5 to 15 carbon atoms, and examples thereof include a phenyl group and a naphthyl group. The alkoxy group as Rle to R5e may be linear, branched or cyclic 'and is, for example, a linear or branched alkoxy group having a carbon number of 1 to 10 and having a carbon number of 1 to 5 (for example, A) An oxy group, an ethoxy group, a linear or branched propoxy group, a linear or branched butoxy group, a linear or branched pentyloxy group) or a cyclic alkoxy group having a carbon number of 3 to 8 (for example, a cyclopentyloxy group, a ring) Hexyloxy) is preferred. -46 - 201033733 In the case of Ri. A specific embodiment of the alkoxy group in the alkoxycarbonyl group to R5e is the same as the specific embodiment of the above alkoxy group of Rlc to R5e. In that as R!. To R5. Specific examples of the alkyl group in the alkylcarbonyloxy group are the above Rle to R5. The specific embodiment of the alkyl group is the same. In that as R!. To R5. Specific examples of the cycloalkyl group in the cycloalkylcarbonyloxy group are the same as the specific examples of the above cycloalkyl group of Rle to R5e. In this as Ri. Specific examples of the aryl group in the aryloxy group of R5e are as described above with Rle to R5. The specific embodiment of the aryl group is the same. ® •. To R5. Any one of linear or branched alkyl, cycloalkyl or linear, branched or cyclic alkoxy groups is preferred, and Rle to R5. The sum of carbon numbers is preferably from 2 to 15 compounds. Due to this compound, solvent solubility is further improved and generation of particles during storage can be suppressed. Can be combined with R!. To R5. The ring structure formed by any two or more members is preferably a 5 or 6 membered ring, and a 6 membered ring (e.g., a phenyl ring) is more preferred. Examples of the alkyl group and the cycloalkyl group as 1 and Ry are the same as those in Ric to R7c. Among these, a 2-oxoalkyl group, a 2-sided oxocycloalkyl group and an alkoxycarbonylmethyl group are preferred. Examples of the 2' side oxyalkyl group and the 2-sided oxocycloalkyl group include a group having > C = 0 at the 2-position of the alkyl group or the cycloalkyl group as Rlc to R7e. The examples of the alkoxy group in the alkoxycarbonylmethyl group are the same as those in Ric to R5c. Each of 1^ and Ry is preferably an alkyl group or a cycloalkyl group having 4 or more carbon atoms, more preferably 6 or more, still more preferably 8 or more. The allyl group is not particularly limited, but an unsubstituted allyl group or an allyl group substituted by a mono-47-201033733 ring or a polycyclic cycloalkyl group (having preferably a cycloalkyl group having 3 to 10 carbon atoms). Preferably. The vinyl group is not particularly limited, but an unsubstituted vinyl group or a vinyl group substituted by a monocyclic or polycyclic cycloalkyl group (having preferably a cycloalkyl group having 3 to 10 carbon atoms) is preferred. This compound (ZI-4) is a compound represented by the following formula (ZI-4):

Z 0 (ZI-4) ❹ 在式(ZI-4)中,R13代表氫原子、氟原子、羥基、烷基、 環烷基、烷氧基或烷氧基羰基。Z 0 (ZI-4) ❹ In the formula (ZI-4), R13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group or an alkoxycarbonyl group.

Rm代表(當存在有複數個R14時,各者各自獨立地代 表)羥基、烷基、環烷基、烷氧基、烷基楓基或環烷基颯基。 每個r15各自獨立地代表烷基、環烷基或萘基。二個 Ris可結合以形成環。 1代表整數0至2。 Γ代表整數0至1 0。 L代表非親核性陰離子,及其實施例與在式(ΖΙ)中的那 些非親核性陰離子Ζ·相同。 在式(ΖΙ-4)中,該作爲R13、R14及R15的烷基爲具有碳 數:1至10之線性或分支烷基較佳,及其實施例包括甲基、 乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙 -48 - 201033733 基、三級丁基、正戊基、新戊基、正己基、正庚基、正辛 基、2-乙基己基、正壬基及正癸基。在這些烷基當中,甲 基、乙基、正丁基及三級丁基較佳。 該Rl3、Rl4及R15的環烷基之實施例包括環丙基、環 丁基、環戊基、環己基、環庚基、環辛基、環十二烷基、 環戊烯基、環己烯基、環辛二烯基、降萡基、三環癸基、 四環癸基及金剛烷基。尤其是,環丙基、環戊基、環己基、 環庚基及環辛基較佳。 〇 該R13及R14的烷氧基爲具有碳數1至10的線性或分 支烷氧基較佳,及其實施例包括甲氧基、乙氧基、正丙氧 基、異丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、 三級丁氧基、正戊氧基、新戊氧基、正己氧基、正庚氧基、 正辛氧基、2-乙基己基氧基、正壬氧基及正癸氧基。在這 些烷氧基當中,甲氧基、乙氧基、正丙氧基及正丁氧基較 佳。 該R13的烷氧基羰基爲具有碳數2至11之線性或分支 ^ 烷氧基羰基較佳,及其實施例包括甲氧基羰基、乙氧基羰 基、正丙氧基羰基、異丙氧基羰基、正丁氧基羰基、2-甲 基丙氧基羰基、1-甲基丙氧基羰基、三級丁氧基羰基、正 戊氧基羰基、新戊氧基羰基、正己氧基羰基、正庚氧基羰 基、正辛氧基羰基、2-乙基己氧基羰基、正壬氧基羰基及 正癸氧基羰基。在這些烷氧基羰基當中,甲氧基羰基、乙 氧基羰基及正丁氧基羰基較佳。 該Rm的烷基硒基及環烷基碾基爲線性、分支或環狀 -49- 201033733 及具有碳數1至10較佳,及其實施例包括甲磺醯基、乙磺 醯基、正丙磺醯基、正丁磺醯基、三級丁磺醯基、正戊磺 醯基、新戊磺醯基、正己磺醯基、正庚磺醯基、正辛磺醯 基、2-乙基己磺醯基、正壬磺醯基、正癸磺醯基、環戊磺 醯基及環己磺醯基。在這些烷基颯基當中,甲磺醯基、乙 磺醯基、正丙磺醯基、正丁磺醯基、環戊磺醯基及環己磺 醯基較佳。 1爲〇或1較佳,1更佳;及r爲數字0至2較佳。 R13、Rm及R15之基團各者可具有的取代基之實施例 © 晳括鹵素原子(例如,氟)、羥基、羧基、氰基、硝基、烷 氧基、烷氧基烷基、烷氧基羰基及烷氧基羰基氧基。 該烷氧基的實施例包括具有碳數1至20之線性、分支 或環狀烷氧基,諸如甲氧基、乙氧基、正丙氧基、異丙氧 基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、三級丁氧 基、環戊氧基及環己氧基。 該烷氧基烷基的實施例包括具有碳數2至21之線性、 分支或環狀烷氧基烷基,諸如甲氧基甲基、乙氧基甲基、 ❹ 1-甲氧基乙基、2-甲氧基乙基、1-乙氧基乙基及2-乙氧基 乙基。 該烷氧基羰基的實施例包括具有碳數2至21之線性、 分支或環狀烷氧基羰基,諸如甲氧基羰基、乙氧基羰基、 正丙氧基羰基、異丙氧基羰基、正丁氧基羰基、2-甲基丙 氧基羰基、1-甲基丙氧基羰基、三級丁氧基羰基、環戊氧 基羰基及環己氧基羰基》 -50- 201033733 該烷氧基羰基氧基的實施例包括具有碳數2至21的線 性、分支或環狀烷氧基羰基氧基,諸如甲氧基擬基氧基、 乙氧基羰基氧基、正丙氧基羰基氧基、異丙氧基簾基氧基、 正丁氧基羰基氧基、三級丁氧基羰基氧基、環戊氧基擬基 及環己氧基羰基。 至於該可藉由結合二個Rl5所形成的環結構’能與在 式(ZI-4)中的硫原子一起形成5或6員環之基團較佳’及能 形成5員環的基團(也就是說,四氫噻吩環)更佳。在環結 〇 構上的取代基之實施例包括羥基、羧基、氰基、硝基、烷 氧基、烷氧基烷基、烷氧基羰基及烷氧基羰基氧基。可於 該環結構上存在複數個取代基,及這些取代基可結合以形 成環(芳香族或非芳香族烴環、芳香族或非芳香族雜環、或 藉由結合這些環的二或更多個所形成之多環稠環)》 R15爲例如甲基、乙基、萘基、或結合二個Ri5以與硫 原子一起形成四氫噻吩環結構的二價基團較佳。 如上所述,該Ri 3的烷基、環烷基、烷氧基及烷氧基 ❹ 羰基及該Rm的烷基、環烷基、烷氧基、烷基颯基及環烷 基颯基各者可經取代,及該取代基爲羥基、烷氧基、烷氧 基锻基或鹵素原子(特別是氟原子)較佳。 下列提出在由式(ZI-4)所表示的化合物中之陽離子的 特定較佳實施例。 -51 - 201033733Rm represents (when a plurality of R14 are present, each independently represents) a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkyl maple group or a cycloalkyl group. Each r15 independently represents an alkyl group, a cycloalkyl group or a naphthyl group. Two Ris can be combined to form a loop. 1 represents an integer of 0 to 2. Γ represents an integer from 0 to 1 0. L represents a non-nucleophilic anion, and the examples thereof are the same as those of the non-nucleophilic anion in the formula (ΖΙ). In the formula (ΖΙ-4), the alkyl group as R13, R14 and R15 is preferably a linear or branched alkyl group having a carbon number of from 1 to 10, and examples thereof include a methyl group, an ethyl group, and a n-propyl group. , isopropyl, n-butyl, 2-methylpropyl, 1-methylpropanyl-48 - 201033733, tributyl, n-pentyl, neopentyl, n-hexyl, n-heptyl, n-octyl , 2-ethylhexyl, n-decyl and n-decyl. Among these alkyl groups, a methyl group, an ethyl group, a n-butyl group and a tertiary butyl group are preferred. Examples of the cycloalkyl group of Rl3, R14 and R15 include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclododecyl, cyclopentenyl, cyclohexyl Alkenyl, cyclooctadienyl, norbornyl, tricyclodecyl, tetracyclodecyl and adamantyl. In particular, a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group and a cyclooctyl group are preferred. The alkoxy group of R13 and R14 is preferably a linear or branched alkoxy group having a carbon number of 1 to 10, and examples thereof include a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, and a positive electrode. Butoxy, 2-methylpropoxy, 1-methylpropoxy, tert-butoxy, n-pentyloxy, neopentyloxy, n-hexyloxy, n-heptyloxy, n-octyloxy, 2-Ethylhexyloxy, n-decyloxy and n-decyloxy. Among these alkoxy groups, a methoxy group, an ethoxy group, a n-propoxy group and a n-butoxy group are preferred. The alkoxycarbonyl group of R13 is preferably a linear or branched alkoxycarbonyl group having 2 to 11 carbon atoms, and examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, a n-propoxycarbonyl group, and an isopropoxy group. Carbocarbonyl, n-butoxycarbonyl, 2-methylpropoxycarbonyl, 1-methylpropoxycarbonyl, tert-butoxycarbonyl, n-pentyloxycarbonyl, neopentyloxycarbonyl, n-hexyloxycarbonyl , n-heptyloxycarbonyl, n-octyloxycarbonyl, 2-ethylhexyloxycarbonyl, n-decyloxycarbonyl and n-decyloxycarbonyl. Among these alkoxycarbonyl groups, a methoxycarbonyl group, an ethoxycarbonyl group and a n-butoxycarbonyl group are preferred. The alkyl selenyl group and the cycloalkyl group of the Rm are linear, branched or cyclic -49-201033733 and have a carbon number of 1 to 10, and examples thereof include a methylsulfonyl group, an ethylsulfonyl group, and a positive Propisulfonyl, n-butylsulfonyl, tert-butylsulfonyl, n-pentylsulfonyl, neopentylsulfonyl, n-hexylsulfonyl, n-heptylsulfonyl, n-octylsulfonyl, 2-B A hexyl sulfonyl group, a sulfonium sulfonyl group, a sulfonium sulfonyl group, a cyclopentyl sulfhydryl group, and a cyclohexylsulfonyl group. Among these alkylthio groups, a methylsulfonyl group, an ethylsulfonyl group, a n-propylsulfonyl group, a n-butylsulfonyl group, a cyclopentylsulfonyl group and a cyclohexylsulfonyl group are preferred. 1 is 〇 or 1 is preferred, 1 is more preferred; and r is preferably 0 to 2 in number. Examples of substituents which each of the groups of R13, Rm and R15 may have include a halogen atom (e.g., fluorine), a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an alkoxy group, an alkoxyalkyl group, and an alkane group. Oxycarbonyl and alkoxycarbonyloxy. Examples of the alkoxy group include linear, branched or cyclic alkoxy groups having a carbon number of 1 to 20, such as methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, 2 -methylpropoxy, 1-methylpropoxy, tert-butoxy, cyclopentyloxy and cyclohexyloxy. Examples of the alkoxyalkyl group include a linear, branched or cyclic alkoxyalkyl group having a carbon number of 2 to 21, such as methoxymethyl, ethoxymethyl, oxime 1-methoxyethyl. , 2-methoxyethyl, 1-ethoxyethyl and 2-ethoxyethyl. Examples of the alkoxycarbonyl group include a linear, branched or cyclic alkoxycarbonyl group having a carbon number of 2 to 21, such as a methoxycarbonyl group, an ethoxycarbonyl group, a n-propoxycarbonyl group, an isopropoxycarbonyl group, n-Butoxycarbonyl, 2-methylpropoxycarbonyl, 1-methylpropoxycarbonyl, tert-butoxycarbonyl, cyclopentyloxycarbonyl and cyclohexyloxycarbonyl" -50- 201033733 The alkoxy Examples of the carbonyloxy group include a linear, branched or cyclic alkoxycarbonyloxy group having a carbon number of 2 to 21, such as a methoxy pseudoyloxy group, an ethoxycarbonyloxy group, a n-propoxycarbonyloxy group. Base, isopropoxyloxy, n-butoxycarbonyloxy, tert-butoxycarbonyloxy, cyclopentyloxy, and cyclohexyloxycarbonyl. As for the ring structure formed by combining two R15, a group capable of forming a 5- or 6-membered ring together with a sulfur atom in the formula (ZI-4) is preferable, and a group capable of forming a 5-membered ring. (That is, the tetrahydrothiophene ring) is better. Examples of the substituent on the ring structure include a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an alkoxy group, an alkoxyalkyl group, an alkoxycarbonyl group, and an alkoxycarbonyloxy group. There may be a plurality of substituents on the ring structure, and these substituents may be combined to form a ring (aromatic or non-aromatic hydrocarbon ring, aromatic or non-aromatic heterocyclic ring, or two or more by combining these rings) A plurality of formed polycyclic fused rings) R15 is preferably a methyl group, an ethyl group, a naphthyl group, or a divalent group in which two Ri5 groups are bonded together to form a tetrahydrothiophene ring structure together with a sulfur atom. As described above, the alkyl group, the cycloalkyl group, the alkoxy group and the alkoxy fluorenylcarbonyl group of Ri 3 and the alkyl group, the cycloalkyl group, the alkoxy group, the alkyl fluorenyl group and the cycloalkyl fluorenyl group of the Rm are each The substituent may be substituted, and the substituent is preferably a hydroxyl group, an alkoxy group, an alkoxy group or a halogen atom (particularly a fluorine atom). Specific preferred embodiments of the cations in the compounds represented by the formula (ZI-4) are set forth below. -51 - 201033733

-52- 201033733 該酸產生劑的其它實施例包括由下列式(ZIV)、(zv)及 (ZVI)所表示的化合物: ϊ-52-201033733 Other examples of the acid generator include compounds represented by the following formulae (ZIV), (zv) and (ZVI): ϊ

Ar3*S〇2~S〇2~Ar4 ZIV Ο R208"S〇2*〇*~N, ζνAr3*S〇2~S〇2~Ar4 ZIV Ο R208"S〇2*〇*~N, ζν

ZVI 在式(ZIV)至(ZVI)中,Ar3及Ar4各者各自獨立地代表 ❹芳基。 尺2〇8、R2〇9及R210各者各自獨立地代表烷基、環烷基 或芳基。 A代表伸烷基、伸烯基或伸芳基。 該Ar3、Ar4、R2G8、R2Q9及R21Q之芳基的特定實施例 與在式(ZI-.1)中之Rm、r2Q2及R2Q3的芳基之特定實施例 相同。 該Κ·2〇8、R2〇9及R^o的院基及環院基之特定實施例與 ❹ 在式(ZI-2)中該作爲Rm、Rm及r2Q3的烷基及環烷基之 特定實施例相同。 該A之伸烷基包括具有碳數丨至12的伸烷基(例如, 亞甲基、伸乙基、伸丙基、伸異丙基、伸丁基、伸異丁基); 該A之伸烯基包括具有碳數2至12的伸烯基(例如,伸乙 炔基、伸丙烯基、伸丁烯基);及該A之伸芳基包括具有碳 數6至1 〇的伸芳基(例如,伸苯基、伸甲苯基、伸萘基)。 在該酸產生劑當中’由式(ZI)至(ZIII)所表示的化合物 -53- 201033733 更佳。 從酸產生劑所產生的陽離子之特定的較佳實施例包括 由下列式指出的陽離子。ZVI In the formulae (ZIV) to (ZVI), each of Ar3 and Ar4 independently represents an anthracene group. Each of the ruthenium 2, 8, R2, and R210 independently represents an alkyl group, a cycloalkyl group or an aryl group. A represents an alkyl group, an alkenyl group or an aryl group. Specific examples of the aryl groups of Ar3, Ar4, R2G8, R2Q9 and R21Q are the same as the specific examples of the aryl groups of Rm, r2Q2 and R2Q3 in the formula (ZI-.1). Specific examples of the base and ring base of the Κ·2〇8, R2〇9 and R^o and ❹ in the formula (ZI-2) as the alkyl group and cycloalkyl group of Rm, Rm and r2Q3 The specific embodiments are the same. The alkylene group of the A includes an alkylene group having a carbon number of 丨 to 12 (for example, a methylene group, an exoethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group); The alkenyl group includes an alkenyl group having 2 to 12 carbon atoms (for example, an ethynyl group, a propenyl group, a butenyl group); and the exoaryl group of the A includes an exoaryl group having a carbon number of 6 to 1 Å. (for example, phenyl, tolyl, and naphthyl). Among the acid generators, the compound -53-201033733 represented by the formula (ZI) to (ZIII) is more preferable. Specific preferred embodiments of the cation produced from the acid generator include cations indicated by the following formula.

-54 201033733-54 201033733

-55- 201033733 -〇作 【分- CeHl3H0^-I C8H17^Q X;k X>0 上〇 丄o 0.0 丄cc >X;s〇 ^X;s〇 >^C° Ο^8。〇^+〇 〇r^〇.0^-55- 201033733 -〇作[分- CeHl3H0^-I C8H17^Q X;k X>0 〇 丄o 0.0 丄cc >X;s〇 ^X;s〇 >^C° Ο^8. 〇^+〇 〇r^〇.0^

9 +r"9 +r"

-56- 201033733-56- 201033733

-57- 201033733-57- 201033733

-58- 201033733-58- 201033733

ΟΟ

該酸產生劑爲能產生具有一個磺酸基團或醯亞胺基團 的酸之化合物較佳,能產生單價全氟烷磺酸的化合物、能 產生由氟原子或含氟原子基團取代的單價芳香族磺酸之化 合物、或能產生由氟原子或含氟原子基團取代的單價醯亞 胺酸之化合物更佳,經氟取代的烷磺酸、經氟取代的苯磺 酸、經氟取代的醯亞胺酸或經氟取代的甲基化物酸之锍鹽 -59- 201033733 又更佳。特別是,可使用的酸產生劑爲能產生經氟取代的 烷磺酸、經氟取代苯磺酸或經氟取代醯亞胺酸之化合物較 佳,其中所產生的酸之PKa爲-1或較少,及於此實例中, 可提高靈敏度》 該能產生上述描述的酸之化合物爲能產生由下列式(I) 所表示的酸之化合物較佳: ho3sThe acid generator is preferably a compound capable of producing an acid having a sulfonic acid group or a quinone imine group, a compound capable of producing a monovalent perfluoroalkanesulfonic acid, and capable of being substituted by a fluorine atom or a fluorine atom-containing group. a compound of a monovalent aromatic sulfonic acid or a compound capable of producing a monovalent imidic acid substituted by a fluorine atom or a fluorine atom-containing group, a fluorine-substituted alkanesulfonic acid, a fluorine-substituted benzenesulfonic acid, a fluorine Substituted quinucin or fluorinated methic acid bismuth salt - 59 - 201033733 is even better. In particular, an acid generator which can be used is preferably a compound which can produce a fluorine-substituted alkanesulfonic acid, a fluorine-substituted benzenesulfonic acid or a fluorine-substituted sulfimine, wherein the acid produced has a PKa of -1 or Less, and in this case, the sensitivity can be improved. The compound which produces the acid described above is preferably a compound capable of producing an acid represented by the following formula (I): ho3s

-or9 m5 (1)-or9 m5 (1)

在式(1)中,1至R8各者各自獨立地代表氫原子、烷 基、環烷基、鹵素原子或羥基。R9代表氫原子、烷基、環 烷基、烯基、-CORx或- S02Rs。A代表含雜原子的二價連 結基團或單鍵。Rx代表烷基、環烷基、芳基或雜芳基。Rs 代表烷基、環烷基或芳基。ml至m4各者各自獨立地代表 整數〇至12,其限制條件爲m3+m4g 1。m5代表整數1至 3。當任何ml至m5爲整數2或更大時,複數個1^至R8 及A成員各者可相同或不同。 於此,該烷基、環烷基及烯基可具有氟原子作爲取代 基。同樣地,Rs可進一步具有一或多個取代基’及該取代 基的實施例包括烷基(具有碳數1至4的線性或分支烷基較 佳)及烷氧基(具有碳數1至4的線性或分支烷氧基較佳)。 該A之含雜原子的二價連結基團包括氧原子、-CO-、 -CONR-、-S02NR-、-CONRCO-、-S02NRC0-、-S02NRS02_ -60- 201033733 及-OCONR-,其中R代表氫原子、烷基或環烷基。In the formula (1), each of 1 to R8 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom or a hydroxyl group. R9 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, -CORx or -S02Rs. A represents a divalent linking group or a single bond containing a hetero atom. Rx represents an alkyl group, a cycloalkyl group, an aryl group or a heteroaryl group. Rs represents an alkyl group, a cycloalkyl group or an aryl group. Each of ml to m4 independently represents an integer 〇 to 12 with a constraint of m3 + m4g 1. M5 represents an integer of 1 to 3. When any of ml to m5 is an integer of 2 or more, each of the plurality of 1^ to R8 and A members may be the same or different. Here, the alkyl group, the cycloalkyl group and the alkenyl group may have a fluorine atom as a substituent. Similarly, Rs may further have one or more substituents ' and examples of the substituent include an alkyl group (a linear or branched alkyl group having a carbon number of 1 to 4 is preferred) and an alkoxy group (having a carbon number of 1 to A linear or branched alkoxy group of 4 is preferred). The hetero atom-containing divalent linking group of A includes an oxygen atom, -CO-, -CONR-, -S02NR-, -CONRCO-, -S02NRC0-, -S02NRS02_-60-201033733 and -OCONR-, wherein R represents A hydrogen atom, an alkyl group or a cycloalkyl group.

Ri至Rjt各者各自獨立地爲氫原子、全氟烷基或氟原子 較佳,全氟烷基或氟原子更佳。A爲單鍵或氧原子較佳。 R9爲由-CORx所表示的醯基較佳。Rx爲環烷基或芳基較 佳。在式(1)中,毗連至S03H的碳原子由氟原子或三氟甲 基取代較佳。 該能產生具有由式(1)所表示的結構之酸的化合物爲 由下列式(1-A)所表示的結構較佳: 〇 .Each of Ri to Rjt is independently a hydrogen atom, a perfluoroalkyl group or a fluorine atom, and a perfluoroalkyl group or a fluorine atom is more preferred. A is preferably a single bond or an oxygen atom. R9 is preferably a fluorenyl group represented by -CORx. Rx is preferably a cycloalkyl group or an aryl group. In the formula (1), a carbon atom adjacent to S03H is preferably substituted by a fluorine atom or a trifluoromethyl group. The compound capable of producing an acid having a structure represented by the formula (1) is preferably a structure represented by the following formula (1-A): 〇 .

在式(1-A)中,^至r9、A及ml至m5各別具有與在 式(1)中的Ri至R?、A及ml至m5相同之意義;及M +代表 有機抗衡陽離子。 該由M +所表示的有機抗衡離子爲鍈或毓離子較佳,銃 離子更佳。 該由M +所表示的有機抗衡離子之實施例包括在式(ZI) 及(ZII)中的陽離子及由之後描述之式(Hd)所表示的陽離 子。 該鐵陽離子M+爲在由式(ZI-4)所表示的化合物中之陽 離子更佳。 由式(1)所表示的酸爲由下列式(1-B)至(1_D)所表示的 結構更佳: -61 - 201033733 F cf3 f f h h f f / f f\ f HO3S—I—j—0R9 HO3S—(—|—I_L〇r9 HO3S—I~|4〇—f~|4-0— FH F F Η H F F \ CFS F/m6 (1-B) (1-C) (1-D) 在式(1-B)至(1-D)中,r9具有與在式(1)中的R9相同的 意義;及m6代表整數0至2。 該能產生由式(1)所表示的酸之化合物爲由下列式(1-E) 至U-G)所表示之結構更佳: —J~(-0¾ 能3S—~|~I~[―j-ORg MOjS—I~[i〇-J~l-X〇—l==CF2 ." F F H H ^ ^ ^ l 約 (1_E) (1-F) (1-G) 〇 在式(1-E)至(1-G)中,m6具有與在上述式(1-D)中的 m6相同的意義;及汉9與m +具有與在上述式(1_入)中的 及M +相同的意義。 下列提出該能產生由式(1)所表示的酸之酸產生劑的 特定實施例’但是本發明不限於此。在特定的實施例中, M +代表上述描述的有機抗衡陽離子。 ❹ -62- 201033733 o ©In the formula (1-A), ^ to r9, A and ml to m5 each have the same meaning as Ri to R?, A and ml to m5 in the formula (1); and M + represents an organic counter cation . The organic counter ion represented by M + is preferably ruthenium or osmium ion, and the ruthenium ion is more preferable. Examples of the organic counter ion represented by M + include a cation in the formulae (ZI) and (ZII) and a cation represented by the formula (Hd) described later. The iron cation M+ is more preferably a cation in the compound represented by the formula (ZI-4). The acid represented by the formula (1) is more preferably represented by the following formulas (1-B) to (1_D): -61 - 201033733 F cf3 ffhhff / ff\ f HO3S—I—j—0R9 HO3S—( —|—I_L〇r9 HO3S—I~|4〇—f~|4-0—FH FF Η HFF \ CFS F/m6 (1-B) (1-C) (1-D) In Equation (1- In B) to (1-D), r9 has the same meaning as R9 in the formula (1); and m6 represents an integer of 0 to 2. The compound which can produce the acid represented by the formula (1) is as follows The structure represented by formula (1-E) to UG) is better: —J~(-03⁄4 can 3S—~|~I~[―j-ORg MOjS—I~[i〇-J~lX〇—l= =CF2 ." FFHH ^ ^ ^ l Approx. (1_E) (1-F) (1-G) 〇 In the formula (1-E) to (1-G), m6 has the above formula (1-D) M6 has the same meaning; and Han 9 and m + have the same meaning as M + in the above formula (1_in). The following is proposed to produce acid production of acid represented by formula (1) Particular embodiments of the agent 'but the invention is not limited thereto. In a particular embodiment, M + represents the organic counter cation described above. ❹ -62- 201033733 o ©

onsnoOnsno

-63- 201033733-63- 201033733

-64- 201033733-64- 201033733

。-〇4-。-!卄。切. -〇4-. -!卄. cut

由下列式(I)所表示的化合物作爲該酸產生劑亦較佳。A compound represented by the following formula (I) is also preferable as the acid generator.

在式(I)中,X +代表有機抗衡離子及R代表氫原子或有 機基團。 -65- 201033733 R代表氫原子或有機基團及爲具有碳數1至40的有機 基團較佳,具有碳數3至20的有機基團更佳,及由下列式 (Π)所表示的有機基團最佳。 該R的有機基團若其具有一或多個碳原子足夠。該有 機基團爲該鍵結至顯示於式(I)的酯鍵中之氧原子的原子爲 碳原子之有機基團較佳,及其實施例包括烷基、環烷基、 芳基、芳烷基及具有內酯結構的基團》該有機基團可在鏈 中包含雜原子,諸如氧原子及硫原子。同樣地,這些基團 之可具有另一個作爲取代基;或該有機基團可具有取代 © 基,諸如羥基、醯基、醯氧基、側氧基團( = 0)或鹵素原子。 -(CH2)n-Rc-(Y)m (II) 在式(II)中,Rc代表單環或多環的有機基團(具有碳數 3至30較佳),其可包括環醚、環狀硫醚、環酮、環狀碳酸 鹽、內酯或內醯胺結構。 Y代表羥基、鹵素原子、氰基、羧基、烴基團(具有碳 數1至10較佳)、羥烷基(具有碳數1至10較佳)、烷氧基(具 有碳數1至10較佳)、醯基(具有碳數2至10較佳)、烷氧 〇 基羰基(具有碳數2至10較佳)、醯氧基(具有碳數2至10 較佳)、烷氧基烷基(具有碳數2至10較佳)或鹵烷基團(具 有碳數1至8較佳)。 m代表整數0至6;及當存在有複數個Y時,每個Y 可與每個其它Y相同或不同。 η代表整數0至1〇〇 構成由式(II)所表示的有機基團之碳原子總數爲40或 -66- 201033733 較少較佳。 最好η爲整數0至3及Rc爲具有碳數7至16的單環 或多環有機基團。 由式(I)所表示的化合物之分子量通常從 300至 1,000 -從400至800較佳,從500至700更佳。 該有機抗衡離子X+的實施例包括銃陽離子及碘陽離 子。 由式(I)所表示的化合物之較佳具體實例包括由式 ® (ZSC1)及(ZIC1)所表示的化合物。In the formula (I), X + represents an organic counter ion and R represents a hydrogen atom or an organic group. -65- 201033733 R represents a hydrogen atom or an organic group and is preferably an organic group having a carbon number of 1 to 40, more preferably an organic group having 3 to 20 carbon atoms, and is represented by the following formula (Π). The organic group is the best. The organic group of R is sufficient if it has one or more carbon atoms. The organic group is preferably an organic group in which the atom bonded to the oxygen atom in the ester bond of the formula (I) is a carbon atom, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, and an aromatic group. Alkyl group and group having a lactone structure. The organic group may contain a hetero atom such as an oxygen atom and a sulfur atom in the chain. Likewise, these groups may have another substituent as a substituent; or the organic group may have a substituent such as a hydroxyl group, a decyl group, a decyloxy group, a pendant oxygen group (= 0) or a halogen atom. -(CH2)n-Rc-(Y)m (II) In the formula (II), Rc represents a monocyclic or polycyclic organic group (having preferably having a carbon number of 3 to 30), which may include a cyclic ether, Cyclic thioether, cyclic ketone, cyclic carbonate, lactone or indoleamine structure. Y represents a hydroxyl group, a halogen atom, a cyano group, a carboxyl group, a hydrocarbon group (having preferably having a carbon number of 1 to 10), a hydroxyalkyl group (having preferably 1 to 10 carbon atoms), and an alkoxy group (having a carbon number of 1 to 10). Preferably, a mercapto group (having preferably a carbon number of 2 to 10), an alkoxycarbonylcarbonyl group (having preferably a carbon number of 2 to 10), a decyloxy group (having preferably a carbon number of 2 to 10), an alkoxyalkyl group The base (having preferably a carbon number of 2 to 10) or a haloalkyl group (having preferably a carbon number of 1 to 8). m represents an integer of 0 to 6; and when there are a plurality of Ys, each Y may be the same or different from each other Y. η represents an integer of 0 to 1 〇〇 The total number of carbon atoms constituting the organic group represented by the formula (II) is 40 or -66 to 201033733, which is less preferred. Preferably, η is an integer of 0 to 3 and Rc is a monocyclic or polycyclic organic group having a carbon number of 7 to 16. The molecular weight of the compound represented by the formula (I) is usually from 300 to 1,000 - preferably from 400 to 800, more preferably from 500 to 700. Examples of the organic counterion X+ include phosphonium cations and iodine cations. Preferable specific examples of the compound represented by the formula (I) include compounds represented by the formulae ® (ZSC1) and (ZIC1).

在式(zscl)中,該R的定義及較佳範圍與在式(I)中的 那些定義相同。 R2(M、R2G2及R2G3各者各自獨立地代表有機基團。 該R2()1、R2Q2及R2 0 3的有機基團之特定實施例、較佳 具體實例及其類似物與在式(ZI)中的那些R2G1、r2G2及r203 相同。 在式(ZIC1)中,該R的定義及較佳範圍與在式(I)中的 那些定義相同。 R2 04及R2 05各者各自獨立地代表芳基、烷基或環烷基。 該R2G4及R2G5的芳基、烷基及環烷基之特定實施例及 較佳具體實施例與上述對在式(ZII)及(ZIII)中的 R2C)4及 R2〇 5之芳基、烷基及環烷基所描述的那些相同。. -67- 201033733 該化合物可爲具有複數個由式(Z sc ,)所表示的結構之 化合物。例如,該化合物可爲具有在由式(ZSC1)所表示的化 合物中之R2(H至R2〇3的至少一個鍵結至在由式(zscl)所表 示的另一種化合物中之R2()1至R2G3的至少一個之結構的化 合物。 由式(I)所表示的化合物可藉由已知方法(例如,根據描 述在JP-A-2007- 1 6 1 707中的方法)合成。In the formula (zscl), the definition and preferred range of the R are the same as those in the formula (I). Each of R2 (M, R2G2 and R2G3 independently represents an organic group. Specific examples, preferred specific examples and analogs of the organic groups of R2()1, R2Q2 and R2 0 3 are in the formula (ZI) Those in R2G1, r2G2 and r203 are the same. In the formula (ZIC1), the definition and preferred range of R are the same as those defined in formula (I). R2 04 and R2 05 each independently represent aryl Specific examples and preferred embodiments of the R2G4 and R2G5 aryl, alkyl and cycloalkyl groups and the above-mentioned R2C)4 in the formulae (ZII) and (ZIII) And the same as those described for the aryl, alkyl and cycloalkyl groups of R2〇5. -67- 201033733 The compound may be a compound having a plurality of structures represented by the formula (Z sc ,). For example, the compound may be R2 (having at least one bond of H to R2〇3 in the compound represented by the formula (ZSC1) to R2()1 in another compound represented by the formula (zscl) A compound of the structure of at least one of R2G3. The compound represented by the formula (I) can be synthesized by a known method (for example, according to the method described in JP-A-2007-61 1 707).

至於該酸產生劑,能在以光化射線或輻射照射後產生 由式(1-A)或(1-B)所表示的酸之化合物亦較佳。As the acid generator, a compound which can produce an acid represented by the formula (1-A) or (1-B) after irradiation with actinic rays or radiation is also preferred.

(I-A)(I-A)

(1·Β) 在式(1-Α)及(1-Β)中,1至R8各者各自獨立地代表氫 原子、烷基、環烷基、鹵素原子或羥基,其限制條件爲Rl Ο 至R8之至少一個爲氟原子或含氟原子基團。 八!及八2各各者自獨立地代表二價連結基團或單鍵。 R代表取代基。當存在有複數個R時,二或更多個R 可結合以形成環。 k代表整數0至5, η代表整數0至5,及ml至m4各 者各自獨立地代表整數0至12,其限制條件爲ml至m4 之至少一個爲整數1或更大。 -68- 201033733 該Αι及A2的二價連結基團之實施例包括- 0-、-S-、 羰基、酯基團、亞碾基、楓基、亞甲基、1,1-伸乙基、1,2-伸乙基、伸丙基、1-甲基伸丙基、1-乙基伸丙基、三亞甲 基、二氟亞甲基、四氟-1,2-伸乙基、1,2-伸苯基、1,3-伸苯 基、1,4-伸苯基、及藉由結合這些基團之二或更多個所形 成的基團。在這些二價基團當中,羰基、酯基團、亞甲基、 二氟亞甲基及四氟-1,2-伸乙基較佳》 該R的取代基之實施例包括側氧基團( = 0)、羥基、羧 ❹ 基、甲醯基、烷基(線性或分支,具有碳數1至10較佳)、 亞乙烯基(線性或分支,具有碳數1至10較佳)、單價環狀 有機基團(具有碳數3至12較佳)、芳基(具有碳數6至20 較佳)、院氧基(線性或分支,具有碳數1至10較佳)、芳氧 基(具有碳數6至20較佳)、烷基羰基(線性或分支,具有碳 數2至10較佳)、芳基羰基(具有碳數7至20較佳)、烷氧 基羰基(線性或分支,具有碳數2至10較佳)及芳氧基羰基 (具有碳數7至20較佳)。 〇 該R的取代基爲側氧基團( = 〇)、烷基、烷氧基、烷基 羰基(線性或分支,具有碳數2至10較佳)或烷氧基羰基較 佳。 該烷基的實施例包括甲基、乙基、正丙基、異丙基、 正丁基、三級丁基、正戊基、正己基、正庚基、正辛基、 正壬基及正癸基。 該亞乙烯基的實施例包括碳烯基(carbenyl)、1,卜亞乙 基、亞丙基、1-甲基亞丙基及1-乙基亞丙基。 -69- 201033733 該單價環狀有機基團的實施例包括環戊基、環己基、 金剛院基、降宿基及茨醯基(campholoyl)。 該芳基的實施例包括苯基、鄰-甲苯基、間-甲苯基、 對-甲苯基、對-羥基苯基、1·萘基、1-蒽基及苄基。 該烷氧基的實施例包括甲氧基、乙氧基、正丙氧基、 異丙氧基、正丁氧基及三級丁氧基。 該芳氧基的實施例包括苯氧基、對-羥基苯氧基、鄰、 甲苯基氧基、間-甲苯基氧基及對-甲苯基氧基。 該烷基羰基的實施例包括甲基羰基、乙基羰基、正丙 0 基羰基、異丙基羰基、正丁基羰基及三級丁基羰基。 該芳基羰基的實施例包括苯基羰基及苄基羰基。 該院氧基羯基的實施例包括甲氧基羯基、乙氧基幾 基、正丙氧基羰基、異丙氧基羰基、正丁氧基羰基及三級 丁氧基羰基。 該芳氧基羰基的實施例包括苯氧基羰基及苄氧基幾 基。這些取代基可進一步具有任意的取代基,例如,—或 多個上述提及的取代基。 ❹ R可鍵結至構成降萡烯環或降佰烷環的任何碳原子, 及當存在有複數個R時’每個可與每個其它R相同或不 同。同樣地’當存在有複數個R時,二或更多個r可結合 以形成一環。也就是說,至少二或更多個尺可與這些R所 鍵結的碳原子一起彼此結合以形成一環。 k爲0較佳及η爲〇或1較佳。 出自由式(1-Α)所表示的結構及由式(1_Β)所表示的炉 -70- 201033733 其類似波長下的吸收強度, 構,考慮到在波長193 〇 該由式(1-A)所表示的結檎較 g的酸之較佳實施例包括由下 由式(1·Α)及(1·Β)所表" 列式所顯示的結構。(1·Β) In the formulae (1-Α) and (1-Β), each of 1 to R8 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom or a hydroxyl group, and the restriction condition is R1 Ο At least one of to R8 is a fluorine atom or a fluorine atom-containing group. Eight! And each of the eight and two independently represents a divalent linking group or a single bond. R represents a substituent. When there are a plurality of Rs, two or more Rs may combine to form a ring. k represents an integer of 0 to 5, η represents an integer of 0 to 5, and ml to m4 each independently represent an integer of 0 to 12, with a constraint that at least one of ml to m4 is an integer of 1 or more. -68-201033733 Examples of the divalent linking group of the oxime and A2 include -0-, -S-, carbonyl, ester group, arylene, maple, methylene, 1,1-extended ethyl 1,2-extended ethyl, propyl, 1-methylpropyl, 1-ethylpropyl, trimethylene, difluoromethylene, tetrafluoro-1,2-extended ethyl, 1 , 2-phenylene, 1,3-phenylene, 1,4-phenylene, and a group formed by combining two or more of these groups. Among these divalent groups, a carbonyl group, an ester group, a methylene group, a difluoromethylene group, and a tetrafluoro-1,2-extended ethyl group are preferred. Examples of the substituent of the R include a pendant oxygen group. (= 0), hydroxy, carboxymethyl, methylidene, alkyl (linear or branched, preferably having a carbon number of 1 to 10), vinylidene (linear or branched, preferably having a carbon number of 1 to 10), Monovalent cyclic organic group (having preferably having a carbon number of 3 to 12), aryl group (preferably having a carbon number of 6 to 20), an alkoxy group (linear or branched, preferably having a carbon number of 1 to 10), and an aryloxy group a base (having preferably a carbon number of 6 to 20), an alkylcarbonyl group (linear or branched, preferably having a carbon number of 2 to 10), an arylcarbonyl group (having preferably a carbon number of 7 to 20), an alkoxycarbonyl group (linear Or a branch having a carbon number of 2 to 10 is preferred) and an aryloxycarbonyl group (having preferably a carbon number of 7 to 20). The substituent of R is a pendant oxygen group (= 〇), an alkyl group, an alkoxy group, an alkylcarbonyl group (linear or branched, preferably having a carbon number of 2 to 10) or an alkoxycarbonyl group. Examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-decyl and癸基. Examples of the vinylidene group include a carbenyl group, a vinylidene group, a propylene group, a 1-methylpropylene group, and a 1-ethylpropylene group. -69-201033733 Examples of the monovalent cyclic organic group include a cyclopentyl group, a cyclohexyl group, a diamond base, a sulphate group, and a campholoyl group. Examples of the aryl group include a phenyl group, an o-tolyl group, a m-tolyl group, a p-tolyl group, a p-hydroxyphenyl group, a 1-naphthyl group, a 1-indenyl group, and a benzyl group. Examples of the alkoxy group include a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, and a tertiary butoxy group. Examples of the aryloxy group include a phenoxy group, a p-hydroxyphenoxy group, an o-, a tolyloxy group, a m-tolyloxy group, and a p-tolyloxy group. Examples of the alkylcarbonyl group include a methylcarbonyl group, an ethylcarbonyl group, a n-propylcarbonyl group, an isopropylcarbonyl group, a n-butylcarbonyl group, and a tertiary butylcarbonyl group. Examples of the arylcarbonyl group include a phenylcarbonyl group and a benzylcarbonyl group. Examples of the oxiranyl group of the present invention include a methoxyindenyl group, an ethoxylated group, a n-propoxycarbonyl group, an isopropoxycarbonyl group, a n-butoxycarbonyl group, and a tertiary butoxycarbonyl group. Examples of the aryloxycarbonyl group include a phenoxycarbonyl group and a benzyloxy group. These substituents may further have any substituent, for example, - or a plurality of the above-mentioned substituents. ❹ R may be bonded to any carbon atom constituting the norbornene ring or the norbornane ring, and when there are a plurality of R's, each may be the same as or different from each other R. Similarly, when there are a plurality of Rs, two or more rs may be combined to form a ring. That is, at least two or more scales may be bonded to each other together with the carbon atoms to which these R are bonded to form a ring. k is preferably 0 and η is 〇 or 1 is preferred. The structure represented by the free-form (1-Α) and the furnace-70-201033733 represented by the formula (1_Β) have an absorption intensity at a similar wavelength, considering that at the wavelength 193 〇, the equation (1-A) The preferred embodiment of the acid represented by the g g of the crucible includes the structure shown by the following formulas (1·Α) and (1·Β).

-71- 201033733 該能產生由式(1-A)或(l-Β)所表示的酸之化合物爲由 下列式(11 - A)或(11 - B)所表示的結構更佳。-71- 201033733 The compound capable of producing an acid represented by the formula (1-A) or (l-Β) is more preferably a structure represented by the following formula (11-A) or (11-B).

在式(II-A)及(II-B)中’ Zi及Z2各者各自獨立地代表 氟原子、全氟烷基或全氟環烷基。 Υι代表單鍵或二價連結基團。 R代表取代基。當存在有複數個R時,二或更多個R 可結合以形成環。 M +代表單價鎗陽離子。 k代表整數0至5及η代表整數〇至5。 Ζι及Ζ2的全氟院基可爲線性或分支,及具有碳數1至 10的全氟烷基較佳。 該2!及Z2的全氟環烷基可爲單環或多環,及例如, 全氟環己基或全氟環戊基較佳。 該Yi的二價基團之實施例與在式(1-A)及(1_B)中的那 些Αι及八2相同。R、k及η與在式(1-A)及(l-Β)中的那 相同。 由M +所表示的單價鑰陽離子爲銚或銃離子較佳,鏡離 子更佳。其特定實施例包括在式(ZI)及(ZII)中的陽離子, 且在式(ZI)中的陽離子較佳。 由下列式(Illd)所表示的陽離子亦較佳。 201033733In the formulae (II-A) and (II-B), each of 'zi and Z2' independently represents a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group. Υι stands for a single bond or a divalent linking group. R represents a substituent. When there are a plurality of Rs, two or more Rs may combine to form a ring. M + represents a monovalent gun cation. k represents an integer of 0 to 5 and η represents an integer 〇 to 5. The perfluorol base of Ζι and Ζ2 may be linear or branched, and a perfluoroalkyl group having 1 to 10 carbon atoms is preferred. The perfluorocycloalkyl group of 2! and Z2 may be monocyclic or polycyclic, and, for example, perfluorocyclohexyl or perfluorocyclopentyl is preferred. The examples of the divalent group of Yi are the same as those of the formulas (1-A) and (1_B). R, k and η are the same as those in the formulae (1-A) and (l-Β). The monovalent key cation represented by M + is preferably ruthenium or osmium ion, and the mirror ion is better. Specific examples thereof include cations in the formulae (ZI) and (ZII), and cations in the formula (ZI) are preferred. A cation represented by the following formula (Illd) is also preferred. 201033733

(llld) 在式(Illd)中,P1G至P21各者各自獨立地代表氫原子、 羥基、烷基(具有碳數1至12較佳)、環烷基(具有碳數3 Ο 至12較佳)、烷氧基(具有碳數1至12較佳)或鹵素原子 (氣、氣、溴、碗)。 Y代表硫原子或氧原子。 m代表0或1。 該至Pu的烷基、環烷基及烷氧基之實施例與在式 (ZI-3)中的那些Rlc至R5e相同。 這些基團各者可進一步具有取代基,及每個基團可進 一步具有的取代基包括有機基團(具有碳數丨至4〇的有機 〇 基團較佳,具有碳數3至20的有機基團更佳)。該有機基 團的實施例包括烷基、環烷基、芳基、芳烷基及含內酯結 構基團’及該有機基團可在鏈中包含雜原子,諸如氧原子 及硫原子。 在式(II-A)及(II-B)中’該作爲m +的銃離子之一個較佳 具體實例爲由下列式(111 e)所表示的毓離子: -73- 201033733(llld) In the formula (Illd), each of P1G to P21 independently represents a hydrogen atom, a hydroxyl group, an alkyl group (having preferably a carbon number of 1 to 12), and a cycloalkyl group (having a carbon number of 3 Torr to 12). ), an alkoxy group (having preferably a carbon number of 1 to 12) or a halogen atom (gas, gas, bromine, bowl). Y represents a sulfur atom or an oxygen atom. m stands for 0 or 1. Examples of the alkyl, cycloalkyl and alkoxy groups to the same are those of Rlc to R5e in the formula (ZI-3). Each of these groups may further have a substituent, and the substituent which each group may further have includes an organic group (an organic sulfonium group having a carbon number of 丨 to 4 Å is preferable, and an organic group having a carbon number of 3 to 20) Better group). Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and a lactone-containing structural group' and the organic group may contain a hetero atom such as an oxygen atom and a sulfur atom in the chain. A preferred specific example of the cerium ion as the m + in the formulae (II-A) and (II-B) is a cerium ion represented by the following formula (111 e): -73- 201033733

在該式中,P22至P24各者各自獨立地代表氫原子或烷 基(具有碳數1至12較佳)。 該P22至I»24的院基之實施例與在式(ZI_3)中的那些Ric 至R 5 c相同。 這些基團各者可進一步具有取代基,及每個基團可進 © 一步具有的取代基之實施例與在式(IIId)中每個基團可進 一步具有的取代基之特定實施例相同。 出自該酸產生劑,下列提出特別佳的實施例。In the formula, each of P22 to P24 independently represents a hydrogen atom or an alkyl group (having preferably having a carbon number of 1 to 12). The embodiment of the hospital base of P22 to I»24 is the same as those of Ric to R5c in the formula (ZI_3). Each of these groups may further have a substituent, and the examples in which each group may have a substituent in one step are the same as the specific examples of the substituent which each group in the formula (IIId) may further have. From the acid generator, the following particularly preferred embodiments are presented.

-74- 201033733 (Q^s+CFsS〇r (0-3- (: (03- (Z1)-74- 201033733 (Q^s+CFsS〇r (0-3- (: (03- (Z1)

C”F23COO* (^S+ CAS〇J-(22) ^s^sH0C"F23COO* (^S+ CAS〇J-(22) ^s^sH0

o (Z7) (z5) (z«) (Or (z3) -^^s+CeFi7S〇r (ζβΓ5^ C^Pt7S〇3> S+ CHaCOO- Qύ (Z9)o (Z7) (z5) (z«) (Or (z3) -^^s+CeFi7S〇r (ζβΓ5^ C^Pt7S〇3> S+ CHaCOO- Qύ (Z9)

OJF^SOr 9 4F*SOrOJF^SOr 9 4F*SOr

Q (Z12) (z13) (z14) ◎ -j-Q-^^eSOa- But>O-(215) (z16) (z17) 崎. 〇4FgSOj- (z18)Q (Z12) (z13) (z14) ◎ -j-Q-^^eSOa- But>O-(215) (z16) (z17) 崎. 〇4FgSOj- (z18)

F^V (219) (220) 75- 201033733 CF8S〇r (221) CF3SO3* (z24) C^gSOgr CaFnSOv (222) (z23) CJr^SOz- CsFitSOs-' (Z25) (226) o-s-cf3 Φ^Ν'( (227)F^V (219) (220) 75- 201033733 CF8S〇r (221) CF3SO3* (z24) C^gSOgr CaFnSOv (222) (z23) CJr^SOz- CsFitSOs-' (Z25) (226) os-cf3 Φ ^Ν'( (227)

MeOMeO

9^9 S-C-* (z30) ?N 0 (z28)9i^9 /~\ V y /-Λ 〇-|-c-|-〇 (231) i3^n-〇tcf3 °(z29) I 9 !?* 9 I -rrc"|T" ❹ 〇"|"CF9 H3CH2CH2C-|-〇.nA^^9^9 SC-* (z30) ?N 0 (z28)9i^9 /~\ V y /-Λ 〇-|-c-|-〇(231) i3^n-〇tcf3 °(z29) I 9 !?* 9 I -rrc"|T" ❹ 〇"|"CF9 H3CH2CH2C-|-〇.nA^^

(z32) o ^-O-S-CHiCHiCHj (r33) (234) (z35) (236) "Ό- S+C4Ft> F&SQr (z38) ;--〇}r (z30) οφ o(z32) o ^-O-S-CHiCHiCHj (r33) (234) (z35) (236) "Ό- S+C4Ft>F&SQr(z38);--〇}r (z30) οφ o

7S03-(Z37) OBU ❹ C4pgS〇3* (240) 6s2〇, σΐ;£ (r41) (242) £ C4F,S〇r-fXs〇 (z43) -76- 2010337337S03-(Z37) OBU ❹ C4pgS〇3* (240) 6s2〇, σΐ; £ (r41) (242) £ C4F,S〇r-fXs〇 (z43) -76- 201033733

(z44)(z44)

(z45)(z45)

C4.F9SO)-» Ο (247)C4.F9SO)-» Ο (247)

ο^1' C4F〇S< <zSO> C4H, "C4H* Orο^1' C4F〇S<<zSO> C4H, "C4H* Or

(z51) (z46)(z51) (z46)

〇 u 0=S—〇2Fs S+ *M 〇—s—C2F5 0 (zS9) 〇〇 u 0=S—〇2Fs S+ *M 〇—s—C2F5 0 (zS9) 〇

(a (261) [Otr 5—c4F* sS一C4Pd li o (z62) -77- 201033733(a (261) [Otr 5—c4F* sS-C4Pd li o (z62) -77- 201033733

(〇)r •O3S °t C4F9SO3- (263) (z64) (〇)·, -〇3S-CF2CFaCFa O /^v f〇(〇)r •O3S °t C4F9SO3- (263) (z64) (〇)·, -〇3S-CF2CFaCFa O /^v f〇

(266) (^3)^ wcF2CF*CF*t0 又》'(z68>(266) (^3)^ wcF2CF*CF*t0 again"'(z68>

(z65> 9 /—s, S+ -O^-CFiCFjCFa-S-N 〇 3 〇 W(z67) o o o S+ F3C-S-N-S-CF2CF2CFa^S-F 3 〇 - 〇(269》 〇(z65> 9 /—s, S+ -O^-CFiCFjCFa-S-N 〇 3 〇 W(z67) o o o S+ F3C-S-N-S-CF2CF2CFa^S-F 3 〇 - 〇 (269) 〇

S+ F3C-S-N-S-<^2CFiCF2-S-0-^J— 〇 II 〇=s—c3f7 (0-r 0 - 0(Z70> o -〇3S-CF2CF2CFz-S-0 (3C72) ©S+ F3C-S-N-S-<^2CFiCF2-S-0-^J- 〇 II 〇=s-c3f7 (0-r 0 - 0(Z70> o -〇3S-CF2CF2CFz-S-0 (3C72) ©

(〇); 0—8一C3F7 fl(271) 〇 S+ -O3S—CF2CF2CF2·· IO (z73)(〇); 0—8—C3F7 fl(271) 〇 S+ -O3S—CF2CF2CF2·· IO (z73)

(^s+c-(|(z77>(^3)^s+CaFsS〇!r<z79)(^s+c-(|(z77>(^3)^s+CaFsS〇!r<z79)

-C2Fe 奶S£V(z»〇) CASOr(z81) ❹ -78 201033733 〇 c〇* (z82) ❹-C2Fe Milk S£V(z»〇) CASOr(z81) ❹ -78 201033733 〇 c〇* (z82) ❹

(z83)(z83)

〇 o Μ M -S-N-S- M II O - o (z90> FjC-S-N-S-CFjCFiCFi-S-N^^ {0r〇 o Μ M -S-N-S- M II O - o (z90> FjC-S-N-S-CFjCFiCFi-S-N^^ {0r

s+-oss^~VQ(z91) -79- 201033733s+-oss^~VQ(z91) -79- 201033733

201033733201033733

-81 · 201033733-81 · 201033733

-82- 201033733-82- 201033733

〜c ω 3:、、卜λ )驭以_ b )所表 施例包括(但不限於)下列化合物。 •83- 201033733~c ω 3:, , λ ) 驭 _ b ) The following examples include, but are not limited to, the following compounds. •83- 201033733

-84- 201033733-84- 201033733

至於該酸產生劑,可單獨使用一種種類或可組合著使 〇 用二或更多種種類。 在該感光化射線或感放射線樹脂組成物中的酸產生劑 之含量從0.1至30質量%較佳,從0.1至20質量%更佳, 從0.5至15質量%又更佳,而從1至13質量%又更佳,以 該感光化射線或感放射線樹脂組成物的全部固體含量爲 準。 [3]具有至少氟原子或矽原子的任一個且包含具有至少二 或更多個極性轉換基團的重覆單元之樹脂(C) 〇 本發明之感光化射線或感放射線樹脂組成物包含(C) 樹脂,其具有至少氟原子或矽原子的任一個及包含具有至 少二或更多個極性轉換基團的重覆單元(c)。該樹脂(C)具有 疏水性,及考慮到減少顯影缺陷,加入樹脂(C)特別佳。 該氟原子可爲在之後描述的極性轉換基團中作爲吸電 子基團之氟原子,或與作爲吸電子基團的氟原子不同之氟 原子。 該重覆單元(C)爲一重覆單元(c,)較佳,其在一側鏈上 -85- 201033733 具有至少二或更多個極性轉換基團及至少氟原子或砂原子 的任一個,也就是說,具有至少氟原子或矽原子的任一個 存在於具有複數個極性轉換基團之側鏈上的結構之重覆單 元。 該重覆單元(C)爲重覆單元(C*)亦較佳,其具有至少二 或更多個極性轉換基團及不具有氟原子或矽原子,且該樹 脂(C)進一步包括具有至少氟原子或矽原子的任一個之重 覆單元。 再者,最好該重覆單元(C)爲重覆單元(C”),其在一側 ® 鏈上具有至少二或更多個極性轉換基團,同時在相同重覆 單元中,在與上述側鏈不同的側鏈上具有至少氟原子或矽 原子的任一個。於此實例中,該具有極性轉換基團的側鏈 與具有至少氟原子或矽原子的任一個之側鏈,經由在主鏈 上的碳原子,呈在α-位置處面對之位置關係(也就是說, 呈下列式(4)的位置關係)較佳。在該式中,Β1代表具有極 性轉換基團的部分結構,及Β2代表具有至少氟原子或矽原 子的任一個之部分結構。 ® Β1 (4) Β2 出自該樹脂(C)的這些具體實施例’具有重覆單元(c’) 更佳。 於此,該極性轉換基團爲能藉由驗性顯影劑之作用分 解以增加在鹼性顯影劑中的溶解度之基團’及爲在式(KA-1 ) -86 - 201033733 或(ΚΒ-l)的結構中由-COO-所表示之部分結構。 至於由式(KA-1)所表示的內酯結構,可使用任何基 團’只要其具有內酯環,但是該基團爲具有5至7員環內 酯結構的基團較佳,及另一個環結構以形成雙環或螺結構 的形式稠和至5至7員環內酯結構之基團較佳。 附隨地’在重覆單元中直接鍵結至樹脂主鏈的酯基團 (例如,在丙烯酸酯中的-COO-)在作爲極性轉換基團的功能 上差,而不包含在本發明之極性轉換基團中。 ^ 該重覆單元(c)可不具有分別由(KA-1)或(KB-1)所表示 的二個完整結構,但是甚至當該等結構部分重疊(例如,呈 由二個酯結構夾一個吸電子基團的形式或採用之後描述的 式(KY-1)之具體實例)時,此推斷爲包含二個極性轉換基 團。 同樣地,在該重覆單元(C*)與重覆單元(C")中,該極性 轉換基團爲在式(KA-1)的結構中由-COO-所表示的部分結 構更佳。As the acid generator, one type may be used alone or in combination of two or more kinds. The content of the acid generator in the sensitized ray or radiation sensitive resin composition is preferably from 0.1 to 30% by mass, more preferably from 0.1 to 20% by mass, still more preferably from 0.5 to 15% by mass, and from 1 to More preferably, 13% by mass, based on the total solid content of the sensitized ray or the radiation-sensitive resin composition. [3] Resin (C) having at least one of a fluorine atom or a ruthenium atom and comprising a repeating unit having at least two or more polarity-switching groups 〇 The sensitized ray or radiation-sensitive resin composition of the present invention comprises ( C) a resin having at least one of a fluorine atom or a ruthenium atom and a repeating unit (c) having at least two or more polar conversion groups. The resin (C) is hydrophobic, and it is particularly preferable to add the resin (C) in view of reducing development defects. The fluorine atom may be a fluorine atom as an electron-withdrawing group in a polarity-switching group described later, or a fluorine atom different from a fluorine atom as an electron-withdrawing group. The repeating unit (C) is preferably a repeating unit (c,) having at least two or more polar converting groups and at least one of a fluorine atom or a sand atom on one side chain -85 to 201033733, That is, a repeating unit having a structure in which at least a fluorine atom or a ruthenium atom exists on a side chain having a plurality of polarity-converting groups. The repeating unit (C) is also preferably a repeating unit (C*) having at least two or more polar converting groups and having no fluorine atom or germanium atom, and the resin (C) further comprising at least A repeating unit of either a fluorine atom or a germanium atom. Furthermore, it is preferred that the repeating unit (C) is a repeating unit (C") having at least two or more polarity-switching groups on one side of the chain, while in the same repeating unit, The side chain having a different side chain has at least one of a fluorine atom or a ruthenium atom. In this example, the side chain having a polar conversion group and a side chain having at least one of a fluorine atom or a ruthenium atom are passed through The carbon atom in the main chain is preferably in a positional relationship at the α-position (that is, in a positional relationship of the following formula (4)). In the formula, Β1 represents a moiety having a polarity-switching group. The structure, and Β2, represents a partial structure having at least one of a fluorine atom or a ruthenium atom. ® Β 1 (4) Β 2 These specific examples from the resin (C) have a repetitive unit (c'). The polar conversion group is a group which can be decomposed by the action of the test developer to increase the solubility in the alkaline developer, and is in the formula (KA-1) -86 - 201033733 or (ΚΒ-l) Part of the structure represented by -COO- in the structure. As for the formula (KA-1) As the lactone structure shown, any group can be used as long as it has a lactone ring, but the group is preferably a group having a 5- to 7-membered ring lactone structure, and the other ring structure is formed to form a bicyclic or spiro structure. Preferably, the group is fused to a 5- to 7-membered ring lactone structure. Attached is an ester group directly bonded to the resin backbone in the repeating unit (for example, -COO- in an acrylate) It is poor in function as a polarity converting group and is not included in the polarity converting group of the present invention. ^ The overlapping unit (c) may not have a symbol represented by (KA-1) or (KB-1), respectively. Two complete structures, but even when the structures partially overlap (for example, in the form of an electron withdrawing group sandwiched by two ester structures or a specific example of the formula (KY-1) described later), this is inferred to be Containing two polarity-switching groups. Similarly, in the repeating unit (C*) and the repeating unit (C"), the polarity-switching group is -COO- in the structure of formula (KA-1) The part of the structure represented is better.

〇 在式(KA-1)及(KB-1)中,Zka代表烷基、環院基、醚基 團、羥基、醯胺基團、芳基、內酯環基團或吸電子基團, 及當存在有複數個Zka時,該複數個Zka可相同或不同。 每個Zka可與每個其它Zka結合以形成環。該藉由Zka -87- 201033733 彼此結合所形成的環之實施例包括環烷基環及雜環 如,環醚環、內酯環)。 nka代表整數0至10及整數0至8較佳,整數0 更佳,整數1至4又更佳及整數1至3最佳。In the formulae (KA-1) and (KB-1), Zka represents an alkyl group, a ring-based group, an ether group, a hydroxyl group, a guanamine group, an aryl group, a lactone ring group or an electron-withdrawing group. And when there are a plurality of Zkas, the plurality of Zkas may be the same or different. Each Zka can be combined with each other Zka to form a ring. Examples of the ring formed by bonding with each other by Zka-87-201033733 include a cycloalkyl ring and a heterocyclic ring such as a cyclic ether ring or a lactone ring). Nka represents an integer of 0 to 10 and an integer of 0 to 8, preferably, an integer of 0 is more preferable, an integer of 1 to 4 is more preferably, and an integer of 1 to 3 is most preferable.

Xkbl及Xkb2各者各自獨立地代表吸電子基團。 nkb及nkb’各者各自獨立地代表〇或1。於此,當 及nkb’爲0時,此指示出Xkbl及Xkb2各者直接鍵結至 團(-COO-)。Each of Xkbl and Xkb2 independently represents an electron withdrawing group. Each of nkb and nkb' independently represents 〇 or 1. Here, when nkb' is 0, this indicates that each of Xkbl and Xkb2 is directly bonded to the group (-COO-).

Rkbi至Rkb4各者各自獨立地代表氫原子、烷基、 基、芳基或吸電子基團;Rkb丨、Rkb2及Xkbl之至少二 員可彼此結合以形成環;及R k b 3、R k b 4及X k b 2之至少 成員可彼此結合以形成環。 該可藉由Rkb3、Rkb4及Xkb2之至少二個成員彼此 所形成的環爲環烷基或雜環基團較佳,及該雜環基團 酯環基團較佳。該內酯環的實施例包括由之後描述 (KA-1-1)至(KA-1-17)所表示的結構。 附隨地,當在由式(KA-1)所表示的結構及由 Xk Xkb2爲單價之式(KB-1)所表示的結構之實例中時,該 (KA-1)或(KB-1)所表示的結構爲(當不具有鍵結時)產 移除在結構中之至少一個任意的氫原子之單價或較大 的部分結構。 在Zka、Xkbl、Xkb2及Rkbi至Rkb4中的吸電子基 括鹵素原子、氰基、氧基團、羰基、羰氧基、氧基羰 腈基團、硝基、颯基、亞颯基、由_C(Rfl)(Rf2)-Rf3所 (例 至5 nkb 酯基 環烷 個成 二個 結合 爲內 之式 bi與 由式 生自 價數 團包 基、 表示 201033733 的鹵(環)烷基或鹵芳基、及其組合。 名稱"鹵(環)烷基"指爲至少一部分經鹵化的烷基或環 烷基。在該吸電子基團爲二價或較大價數的基團之實例 中,剩餘鍵與任意的原子或取代基形成鍵結及可經由進一 步取代基與該樹脂(C)的主鏈結合。 在上述式中,Rfi代表鹵素原子、全鹵烷基、全鹵環烷 基或全鹵芳基,及氟原子、全氟烷基或全氟環烷基較佳, 氟原子或三氟甲基更佳。 ® Rn及Rn各者各自獨立地代表氫原子、鹵素原子或有 機基團;及Rf2與Rf3可結合以形成環。該有機基團的實施 例包括烷基、環烷基及烷氧基。Each of Rkbi to Rkb4 independently represents a hydrogen atom, an alkyl group, a aryl group or an electron withdrawing group; at least two members of Rkb丨, Rkb2 and Xkbl may be bonded to each other to form a ring; and R kb 3, R kb 4 And at least members of X kb 2 may be combined with each other to form a ring. Preferably, the ring formed by at least two members of Rkb3, Rkb4 and Xkb2 is a cycloalkyl group or a heterocyclic group, and the heterocyclic group ester ring group is preferred. Examples of the lactone ring include structures represented by (KA-1-1) to (KA-1-17) described later. Incidentally, when in the example of the structure represented by the formula (KA-1) and the structure represented by the formula (KB-1) in which Xk Xkb2 is a unit price, the (KA-1) or (KB-1) The structure represented is (when there is no bond) a monovalent or larger partial structure that removes at least one arbitrary hydrogen atom in the structure. The electron withdrawing group in Zka, Xkbl, Xkb2 and Rkbi to Rkb4 includes a halogen atom, a cyano group, an oxygen group, a carbonyl group, a carbonyloxy group, an oxycarbonylnitrile group, a nitro group, a fluorenyl group, an anthranylene group, and _C(Rfl)(Rf2)-Rf3 (example to 5 nkb ester cycloalkane in two combinations of internal formula bi and halo (cyclo)alkyl group represented by formula Or a haloaryl group, and combinations thereof. The name "halo(cyclo)alkyl" refers to at least a portion of a halogenated alkyl or cycloalkyl group. The electron withdrawing group is a divalent or larger valent group. In the examples of the group, the remaining bond forms a bond with any atom or substituent and may be bonded to the main chain of the resin (C) via a further substituent. In the above formula, Rfi represents a halogen atom, a perhaloalkyl group, A halocycloalkyl group or a perhaloaryl group, and a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group are preferred, and a fluorine atom or a trifluoromethyl group is preferred. Each of Rn and Rn independently represents a hydrogen atom, a halogen atom or an organic group; and Rf2 and Rf3 may be bonded to form a ring. Examples of the organic group include an alkyl group, a cycloalkyl group, and an alkoxy group. .

Rn至Rn之至少二個成員可結合以形成環,及所形成 的環之實施例包括(鹵)環烷基環及(鹵)芳基環。 在Rn至Rn中的(鹵)烷基爲例如在Zka中的烷基或藉 由鹵化其所形成的結構。 在Rn至Rf3中或在藉由結合Rf2與Rf3所形成的環中 之(全)鹵環烷基或(全)鹵芳基爲例如藉由鹵化在zka中的環 烷基所形成之結構,且由-Cu)F(2n_2)H所表示的氟環烷基或 由-C(n)F(n.u所表示的全氟芳基較佳。於此,碳數η無特別 限制,但是從5至1 3較佳,6更佳。At least two members of Rn to Rn may be bonded to form a ring, and examples of the ring formed include a (halo)cycloalkyl ring and a (halo)aryl ring. The (halo)alkyl group in Rn to Rn is, for example, an alkyl group in Zka or a structure formed by halogenation. The (per)halocycloalkyl or (per)haloaryl group in Rn to Rf3 or in the ring formed by bonding Rf2 and Rf3 is a structure formed, for example, by halogenation of a cycloalkyl group in zka, Further, a fluorocycloalkyl group represented by -Cu)F(2n_2)H or a perfluoroaryl group represented by -C(n)F (nu is preferable. Here, the carbon number η is not particularly limited, but from 5 Preferably, it is preferably 1 and 6 is better.

Rf2代表與Rfi相同的基團較佳,或與Rf3結合以形成 環。 該吸電子基團爲鹵素原子或由上述-C(Rfl)(Rf2)-Rf3所 表示的鹵(環)烷基或鹵芳基較佳,-C(CF3)2H或- C(CF3)2CH3 -89- 201033733 更佳。 在上述吸電子基團中,一部分的氟原子可由另一個吸 電子基團置換。Rf2 represents the same group as Rfi or is bonded to Rf3 to form a ring. The electron withdrawing group is a halogen atom or a halogen (cyclo)alkyl group or a halogen aryl group represented by the above -C(Rfl)(Rf2)-Rf3, -C(CF3)2H or -C(CF3)2CH3. -89- 201033733 Better. In the above electron withdrawing group, a part of the fluorine atom may be replaced by another electron withdrawing group.

Zka爲烷基、環烷基、醚基團、羥基或吸電子基團較佳, 烷基、環烷基或吸電子基團更佳。該醚基團爲例如由烷基 或環烷基取代之醚基團較佳,也就是說,烷基醚基團或其 類似基團較佳。該吸電子基團具有與上述相同的意義。 該作爲zka的鹵素原子包括氟原子、氯原子、溴原子 及碘原子,及氟原子較佳。 該作爲zka的烷基可具有取代基及可爲線性或分支。 該線性烷基爲具有碳數1至30的烷基較佳,從1至20更 佳,及其實施例包括甲基、乙基、正丙基、正丁基、正戊 基、正己基、正庚基、正辛基、正壬基及正癸烷基。該分 支烷基爲具有碳數3至30的烷基較佳,從3至20更佳, 及其實施例包括異丙基、異丁基、二級丁基、三級丁基、 異戊基、三級戊基、異己基、三級己基、異庚基、三級庚 基、異辛基、三級辛基、異壬基及三級癸烯醯基。具有碳 數1至4的烷基較佳,諸如甲基、乙基、正丙基、異丙基、 正丁基、異丁基及三級丁基。 該Zka的環烷基可爲單環或多環。在後者實例中’該 環烷基可經交聯。也就是說,於此實例中,該環烷基可具 有橋接結構。附隨地,在該環烷基中的一部分碳原子可由 雜原子(諸如氧原子)置換。 該單環的環烷基爲具有碳數3至8的環烷基較佳’及 -90- 201033733 其實施例包括環丙基、環丁基、環戊基、環己基及環辛基。 該多環的環烷基之實施例包括具有雙環、三環或四環 結構及具有碳數5或更多的基團。具有碳數6至20之多環 的環烷基較佳,及其實施例包括金剛烷基、降萡基、異萡 基、莰基、二環戊基、α-畫素(α-pinel)基團、三環癸基、 四環十二烷基及雄甾烷基。 此環烷基的實施例包括由下式顯示出的那些。 π> Ο 〇 w a) Pi [=〇COC〇 w (S) (f> CO CO coo ω m mZka is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group or an electron withdrawing group, and an alkyl group, a cycloalkyl group or an electron withdrawing group is more preferable. The ether group is preferably an ether group substituted with, for example, an alkyl group or a cycloalkyl group, that is, an alkyl ether group or a group thereof is preferred. This electron withdrawing group has the same meaning as described above. The halogen atom as zka includes a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferred. The alkyl group as zka may have a substituent and may be linear or branched. The linear alkyl group is preferably an alkyl group having 1 to 30 carbon atoms, more preferably from 1 to 20, and examples thereof include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, N-heptyl, n-octyl, n-decyl and n-decyl. The branched alkyl group is preferably an alkyl group having 3 to 30 carbon atoms, more preferably from 3 to 20, and examples thereof include isopropyl, isobutyl, secondary butyl, tert-butyl, isopentyl. , tertiary pentyl, isohexyl, tertiary hexyl, isoheptyl, tertiary heptyl, isooctyl, tertiary octyl, isodecyl and tertiary terpene fluorenyl. The alkyl group having 1 to 4 carbon atoms is preferred, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and tert-butyl. The cycloalkyl group of Zka may be monocyclic or polycyclic. In the latter example, the cycloalkyl group can be crosslinked. That is, in this example, the cycloalkyl group may have a bridge structure. Incidentally, a part of the carbon atoms in the cycloalkyl group may be replaced by a hetero atom such as an oxygen atom. The monocyclic cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 8 and -90 to 201033733. Examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group and a cyclooctyl group. Examples of the polycyclic cycloalkyl group include a group having a bicyclic, tricyclic or tetracyclic structure and having a carbon number of 5 or more. A cycloalkyl group having a polycyclic number of 6 to 20 carbon atoms is preferred, and examples thereof include an adamantyl group, a decyl group, an isodecyl group, a fluorenyl group, a dicyclopentyl group, and an α-pinel. a group, a tricyclic fluorenyl group, a tetracyclododecyl group, and an androstylene group. Examples of such cycloalkyl groups include those shown by the following formulas. π> Ο 〇 w a) Pi [=〇COC〇 w (S) (f> CO CO coo ω m m

a9 66 °Q <M) (11) ⑽A9 66 °Q <M) (11) (10)

(15) 〇 Oc7 cx> A a«) 〇7) im(15) 〇 Oc7 cx> A a«) 〇7) im

<^\ (M) 网 (站) 〇!) (3«) (37) <38> (3¾ i6> i& ^ (40) («) (42> (43) °s> ® Λ (44> (4S) (46) 〇 〇 o〇 (47) (48) (49) (50) (2¾ (M) (22) (») A ^ 〇b <c^ (2S) (2«) (27) 較佳的脂環烴部分包括金剛烷基、降金剛烷基、萘烷 基團、三環癸基、四環十二烷基、降萡基、雪松醇基團、 環己基、環庚基、環辛基、環癸烷基及環十二烷基。金剛 烷基、萘烷基團、降萡基、雪松醇基團、環己基、環庚基、 -91- 201033733 環辛基、環癸烷基、環十二烷基及三環癸基更佳。 該脂環族結構的取代基包括烷基、鹵素原子、羥基、 烷氧基、羧基及烷氧基羰基。該烷基爲低碳烷基較佳,諸 如甲基、乙基、丙基、異丙基及丁基,且甲基、乙基、丙 基或異丙基更佳。該烷氧基爲具有碳數1至4的烷氧基較 佳,諸如甲氧基、乙氧基、丙氧基及丁氧基。該烷基及烷 氧基可具有的取代基之實施例包括羥基、鹵素原子及烷氧 基(具有碳數1至4較佳)。 該Zka的芳基之實施例包括苯基及萘基。 © 該Zka之烷基、環烷基及芳基可進一步具有的取代基 之實施例包括羥基、鹵素原子、硝基、氰基、上述描述的 烷基、烷氧基(諸如甲氧基、乙氧基、羥基乙氧基、丙氧基、 羥基丙氧基、正丁氧基、異丁氧基、二級丁氧基及三級丁 氧基)、烷氧基羰基(諸如,甲氧基羰基及乙氧基羰基)、芳 烷基(諸如苄基、苯乙基及芡基)、芳烷基氧基、醯基(諸如 甲醯基、乙醯基、丁醯基、苄醯基、桂皮基及戊醯基)、醯 氧基(諸如丁醯氧基)、烯基、烯氧基(諸如乙烯基氧基、丙 烯基氧基、烯丙氧基及丁烯基氧基)、上述描述的芳基、芳 氧基(諸如苯氧基)及芳氧基羰基(諸如苄醯氧基)° 該極性轉換基團藉由鹼性顯影劑之作用分解以達成極 性轉換,藉此可減小該樹脂組成物薄膜在鹼性顯影後與水 的後退接觸角。 該樹脂組成物薄膜在鹸性顯影後,於曝光期 (通常在室溫23±3°c下)及濕度45±5%下’與水之後退接觸 -92- 201033733 角爲50°或較小較佳,40°或較小更佳,35°或較小又更佳 及3 0 °或較小最佳。 該後退接觸角爲當在液滴-基材界面上的接觸線縮回 時所測量之接觸角,及此通常已知在模擬液滴於動態狀態 下的移動率上有用。以簡單的方式來說,後退接觸角可定 義爲當液滴從針尖噴出登陸在基材上,然後再次將液滴吸 入針中時,在液滴界面後縮那時的接觸角。通常來說,該 後退接觸角可藉由稱爲膨脹/收縮方法的接觸角測量方法 ❹來測量。 該樹脂(C)對鹼性顯影劑之水解速率爲0.001奈米/秒 或更大較佳,〇·〇1奈米/秒或更大更佳,0.1奈米/秒或更大 又更佳及1奈米/秒或更大最佳。 該樹脂(C)對鹼性顯影劑之水解速率爲該單獨由樹脂 (C)所形成的薄膜之厚度,當在23°c下以ΤΜΑΗ(氫氧化四 甲基銨水瑢液)(2.38質量%)顯影時,其減少的速率。 Λ 至於該在式(ΚΑ-1)中的內酯環結構,具有由下列式 〇 (ΚΑ-1-1)至(ΚΑ-1-17)之任何一種所表示的內酯結構之基 團更佳.。該含內酯結構基團可直接鍵結至主鏈。較佳的內 酯結構有(ΚΑ-1-1)、(ΚΑ-1-4)、(ΚΑ-1-5)、(ΚΑ-1-6)、 (ΚΑ-1-13)、(ΚΑ-1-14)及(ΚΑ-1-17)。 下列提出該含內酯結構骨架的特定實施例,但是本發 明不限於此。 -93- 201033733<^\ (M) Network (station) 〇!) (3«) (37) <38> (33⁄4 i6>i& ^ (40) («) (42> (43) °s> ® Λ ( 44> (4S) (46) 〇〇o〇(47) (48) (49) (50) (23⁄4 (M) (22) (») A ^ 〇b <c^ (2S) (2«) (27) Preferred alicyclic hydrocarbon moieties include adamantyl, norantantyl, naphthyl, tricyclodecyl, tetracyclododecyl, norbornyl, cedarol, cyclohexyl, ring Heptyl, cyclooctyl, cyclodecyl and cyclododecyl. adamantyl, naphthyl group, thiol group, cedar group, cyclohexyl, cycloheptyl, -91- 201033733 Cyclooctyl More preferably, cycloalkyl, cyclododecyl and tricyclodecyl. The substituent of the alicyclic structure includes an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group and an alkoxycarbonyl group. Preferred are lower alkyl groups such as methyl, ethyl, propyl, isopropyl and butyl, and more preferably methyl, ethyl, propyl or isopropyl. The alkoxy group has a carbon number of 1. Alkoxy groups to 4 are preferred, such as methoxy, ethoxy, propoxy and butoxy. Substituents which the alkyl and alkoxy groups may have Examples include a hydroxyl group, a halogen atom and an alkoxy group (preferably having a carbon number of 1 to 4.) Examples of the aryl group of the Zka include a phenyl group and a naphthyl group. © The alkyl group, the cycloalkyl group and the aryl group of the Zka may be used. Examples of further substituents include a hydroxyl group, a halogen atom, a nitro group, a cyano group, an alkyl group as described above, an alkoxy group (such as a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxy group). Oxyl, n-butoxy, isobutoxy, secondary butoxy and tertiary butoxy), alkoxycarbonyl (such as methoxycarbonyl and ethoxycarbonyl), aralkyl (such as benzyl) , phenethyl and fluorenyl), aralkyloxy, fluorenyl (such as formazan, ethyl fluorenyl, butyl fluorenyl, benzhydryl, cinnamyl and amyl), decyloxy (such as butyl oxy) Alkenyl, alkenyl, alkenyloxy (such as vinyloxy, propenyloxy, allyloxy, and butenyloxy), aryl, aryloxy (such as phenoxy) and aryl described above An oxycarbonyl group (such as benzhydryloxy group). The polar conversion group is decomposed by the action of an alkaline developer to achieve polarity conversion, thereby Reducing the receding contact angle of the resin composition film with water after alkaline development. The film of the resin composition is exposed to the smear, during exposure (usually at room temperature 23±3°c) and humidity 45±5 % lower 'receives contact with water-92-201033733 The angle is 50° or less is better, 40° or smaller is better, 35° or smaller and better and 30° or smaller is best. The contact angle is the contact angle measured when the contact line on the droplet-substrate interface is retracted, and is generally known to be useful in simulating the mobility of droplets in a dynamic state. In a simple manner, the receding contact angle can be defined as the contact angle at which the droplets are retracted at the droplet interface as they are ejected from the tip of the needle onto the substrate and then again aspirated into the needle. Generally, the receding contact angle can be measured by a contact angle measuring method called an expansion/contraction method. The hydrolysis rate of the resin (C) to the alkaline developer is preferably 0.001 nm/sec or more, more preferably 〇·〇1 nm/sec or more, and more preferably 0.1 nm/sec or more. And 1 nanometer / second or more is best. The rate of hydrolysis of the resin (C) to the alkaline developer is the thickness of the film formed by the resin (C) alone, when 23 (tetramethylammonium hydroxide hydrazine) at 23 ° C (2.38 mass) %) The rate at which it is reduced during development. Λ As for the lactone ring structure in the formula (ΚΑ-1), the group having a lactone structure represented by any one of the following formulae (ΚΑ-1-1) to (ΚΑ-1-17) is more good.. The lactone-containing structural group can be directly bonded to the main chain. Preferred lactone structures are (ΚΑ-1-1), (ΚΑ-1-4), (ΚΑ-1-5), (ΚΑ-1-6), (ΚΑ-1-13), (ΚΑ- 1-14) and (ΚΑ-1-17). The specific embodiment of the lactone-containing structural skeleton is proposed below, but the present invention is not limited thereto. -93- 201033733

該內酯結構部分可或可不具有取代基。該取代基的較 佳實施例包括具有碳數1至8的烷基、具有碳數4至7的 環烷基、具有碳數1至8的烷氧基、具有碳數2至8的烷 氧基羰基、羧基、鹵素原子、羥基、氰基及可酸分解的基 團。在這些當中,具有碳數1至4的烷基、具有碳數5至 6的環烷基、氰基、具有碳數2至4的烷氧基羰基、羧基、 _素原子、羥基及可酸分解的基團更佳。當存在有複數個 取代基時,這些可相同或不同,同樣地,一個取代基可與 ® 另一個取代基結合以形成環》 某些內酯結構具有光學異構物,但是可使用任何光學 異構物。可單獨使用一種光學異構物或可使用複數種光學 異構物之混合物。在主要使用一種光學異構物的實例中, 其光學純度(ee)爲90%或更大較佳,95%或更大更佳及98% 或更大最佳。 由(KB-1)所表示的結構具有高極性轉換能力,因爲吸 •94- 201033733 電子基團存在於靠近該酯結構的位置處。The lactone moiety may or may not have a substituent. Preferred examples of the substituent include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, and an alkoxy group having 2 to 8 carbon atoms. a carbonyl group, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group, and an acid-decomposable group. Among these, an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 5 to 6 carbon atoms, a cyano group, an alkoxycarbonyl group having 2 to 4 carbon atoms, a carboxyl group, a sulfonium atom, a hydroxyl group, and an acid group The decomposed group is better. When a plurality of substituents are present, these may be the same or different, and likewise, one substituent may be bonded to another substituent to form a ring. Some lactone structures have optical isomers, but any optical difference may be used. Structure. One optical isomer may be used alone or a mixture of a plurality of optical isomers may be used. In the case of mainly using one optical isomer, the optical purity (ee) is preferably 90% or more, more preferably 95% or more, and most preferably 98% or more. The structure represented by (KB-1) has a high polarity conversion ability because the electron group of the absorption of 94-201033733 exists at a position close to the ester structure.

Xkb2爲鹵素原子或由上述-C(Rn)(Rf2)-Rf3所表示的鹵 (環)烷基或鹵芳基較佳。 至於在重覆單元(C)中的至少二個極性轉換基團,具有 由下列式(KY-1)所表示的二個極性轉換基團之部分結構更 佳。由式(KY-1)所表示的結構爲一產生自移除在該結構中 之至少一個任意的氫原子而具有單價或較大價數的基團之 基團。 〇Xkb2 is preferably a halogen atom or a halogen (cyclo)alkyl group or a halogen aryl group represented by the above -C(Rn)(Rf2)-Rf3. As for at least two polarity-switching groups in the repeating unit (C), a partial structure having two polarity-converting groups represented by the following formula (KY-1) is more preferable. The structure represented by the formula (KY-1) is a group derived from a group having a monovalent or larger valence number obtained by removing at least one arbitrary hydrogen atom in the structure. 〇

(KY-1) 在式(KY-1)中,Rkyi及 R k y 4各者各自獨_LL地代表氮原 子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、 醚基團、羥基、氰基、醯胺基團或芳基。再者,Rkyl及Rky4 可鍵結至相同原子以形成雙鍵。例如,Rkyl及Rky4可鍵結 至相同氧原子以形成羰基的一部分( = 〇)。(KY-1) In the formula (KY-1), each of Rkyi and R ky 4 represents a nitrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, or the like. An ether group, a hydroxyl group, a cyano group, a guanamine group or an aryl group. Furthermore, Rkyl and Rky4 can be bonded to the same atom to form a double bond. For example, Rkyl and Rky4 can be bonded to the same oxygen atom to form a portion of the carbonyl group (= 〇).

Rky2及Rky3各者各自獨立地代表吸電子基團;或Rkyl 與Rky2結合以形成內酯環,同時Rky3爲吸電子基團。所形 成的內酯環爲結構(KA-1-1)至(KA-1-17)較佳。該吸電子基 團的實施例與在式(KB-1)中的那些Xkbi相同,且鹵素原子 及由上述- C(Rfl)(Rf2)-Rf3所表示的鹵(環)烷基或鹵芳基較 佳。 -95- 201033733Each of Rky2 and Rky3 independently represents an electron withdrawing group; or Rkyl combines with Rky2 to form a lactone ring, while Rky3 is an electron withdrawing group. The lactone ring formed is preferably a structure (KA-1-1) to (KA-1-17). Examples of the electron withdrawing group are the same as those of Xkbi in the formula (KB-1), and a halogen atom and a halogen (cyclo)alkyl group or a halogen group represented by the above -C(Rfl)(Rf2)-Rf3 The base is preferred. -95- 201033733

Rkyl、Rky2及Rky4之至少二個成員可彼此結合以形成 單環或多環結構。At least two members of Rkyl, Rky2 and Rky4 may be bonded to each other to form a monocyclic or polycyclic structure.

Rkbi至Rkb4、nkb及nkb,具有與在式(KB-1)中相同的 意義。Rkbi to Rkb4, nkb and nkb have the same meanings as in the formula (KB-1).

Rkyl及Rky4特別包括與在式(KA-1)中的那些Zka相同 之基團。 該藉由結合Rkyl與Rky2所形成的內酯環爲(KA-1-1)至 (尺八-1-17)之結構較佳。該吸電子基團包括與在式(1:6-1)中 的那些Xkbi相同的基團。 © 由式(KY-1)所表示的結構爲由下列式(KY-2)所表示的 結構較佳。於此,由式(KY-2)所表示的結構爲一產生自移 除在該結構中的至少一個氫原子而具有單價或較大價數的 基團之基團。Rkyl and Rky4 particularly include the same groups as those of ZKA in the formula (KA-1). The lactone ring formed by combining Rkyl and Rky2 is preferably a structure of (KA-1-1) to (foot 8-1-17). The electron withdrawing group includes the same groups as those of Xkbi in the formula (1:6-1). The structure represented by the formula (KY-1) is preferably a structure represented by the following formula (KY-2). Here, the structure represented by the formula (KY-2) is a group which gives a group having a monovalent or larger valence number from at least one hydrogen atom removed in the structure.

在式(KY-2)中’ Rky6至RkylO各者各自獨Ai·地代表氮原 子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、 醚基團、羥基、氰基、醯胺基團或芳基。In the formula (KY-2), each of Rky6 to RkylO represents a nitrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, and a cyanogen. a base, a guanamine group or an aryl group.

Rky6至RkylO之二或更多個成員可彼此結合以形成單 環或多環結構。 -96- 201033733Two or more members of Rky6 to RkylO may be bonded to each other to form a monocyclic or polycyclic structure. -96- 201033733

Rky5代表吸電子基團。該吸電子基團包括與在式(ΚΒ-1) 中的那些Xkbl相同的基團,且鹵素原子及由上述 _C:(Rfl)(Rf2)'Rf3所表示的鹵(環)院基或鹵芳基較佳。Rky5 represents an electron withdrawing group. The electron withdrawing group includes the same groups as those of Xkbl in the formula (ΚΒ-1), and a halogen atom and a halogen (ring) group represented by the above _C:(Rfl)(Rf2)'Rf3 or Haloaryl is preferred.

Rkbl、Rkb2及nkb具有與在式(KB-1)中相同的意義。Rkbl, Rkb2, and nkb have the same meanings as in the formula (KB-1).

Rky5至Rkyl<)特別包括與在式(KA-1)的那些Zka相同之 基團。Rky5 to Rkyl<) specifically include the same groups as those of ZKA of the formula (KA-1).

由式(KY-2)所表示的結構爲由下列式(κγ_3)所表示的 部分結構較佳。The structure represented by the formula (KY-2) is preferably a partial structure represented by the following formula (κγ_3).

在式(ΚΥ-3)中,及nka具有與在式(ΚΑ-1)中相同的 意義。Rkys具有與在式(KY-2)中相同的意義。In the formula (ΚΥ-3), and nka have the same meaning as in the formula (ΚΑ-1). Rkys has the same meaning as in the formula (KY-2).

Rkbl、Rkb2及nkb具有與在式(尺^彡中相同的意義。 Lky代表伸烷基、氧原子或硫原子。該Lky的伸烷基之 ^ 實施例包括亞甲基及伸乙基。Lky爲氧原子或亞甲基較佳, 亞甲基更佳。Rkbl, Rkb2 and nkb have the same meanings as in the formula (Lyke represents an alkyl group, an oxygen atom or a sulfur atom. Examples of the alkyl group of the Lky include a methylene group and an ethyl group. Lky Preferably, it is an oxygen atom or a methylene group, and a methylene group is more preferable.

Rs代表鏈或環狀伸烷基,及當存在有複數個1^時,這 些可相同或不同。Rs represents a chain or a cyclic alkyl group, and when a plurality of groups are present, these may be the same or different.

Ls代表單鍵、醜鍵、酯鍵、酿胺鍵、胺基甲酸醋鍵或 尿素鍵;及當存在有複數個Ls時,這些可相同或不同。 ns爲由-(Rs-Ls)-所表示的連結基團之重覆數目及代表 整數0至5。 -97- 201033733 該重覆單元(c)具有由式(K0)所表示的結構較佳: (Κ0) —R^2 在該式中,Rkl代表氫原子、鹵素原子、羥基、烷基、 環烷基、芳基或具有極性轉換基團的基團。Ls represents a single bond, an ugly bond, an ester bond, a urethane bond, a urethane bond or a urea bond; and when a plurality of Ls are present, these may be the same or different. Ns is the number of repeats of the linking group represented by -(Rs-Ls)- and represents an integer of 0 to 5. -97- 201033733 The repeating unit (c) has a structure represented by the formula (K0): (Κ0) - R^2 In the formula, Rkl represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a ring An alkyl group, an aryl group or a group having a polar conversion group.

Rk2代表烷基、環烷基、芳基或具有極性轉換基團的基 團,其限制條件爲Rkl及Rk2全部具有二或更多個極性轉換 基團。 ❹ 附隨地,如上所述,當使用在本發明中時,該直接鍵 結至由式(K0)所表示的重覆單元之主鏈的酯基團不包含在 該極性轉換基團中》 該重覆單元(c)無限制,只要其爲藉由聚合(諸如加成聚 合、縮合聚合及加成縮合)所獲得的重覆單元,但是藉由碳 -碳雙鍵之加成聚合所獲得的重覆單元較佳。其實施例包括 以丙烯酸酯爲基礎的重覆單元(包括在ct-或/3-位置處具有 取代基之系統)、以苯乙烯爲基礎的重覆單元(包括在α-或 @ 冷-位置處具有取代基之系統)、以乙烯基醚爲基礎的重覆 單元、以降萡烯爲基礎的重覆單元及馬來酸衍生物(例如, 馬來酸酐或其衍生物、馬來醯亞胺)重覆單元。以丙烯酸酯 爲基礎的重覆單元、以苯乙烯爲基礎的重覆單元、以乙烯 基醚爲基礎的重覆單元及以降萡烯爲基礎的重覆單元較 佳;以丙烯酸酯爲基礎的重覆單元、以乙烯基醚爲基礎的 重覆單元及以降萡烯爲基礎的重覆單元更佳;及以丙烯酸 -98- 201033733 酯爲基礎的重覆單元最佳。 包含在本發明之感光化射線或感放射線樹脂組成物中 的樹脂(C)包括具有至少氟原子或矽原子的任一個之重覆 單元。 由於此重覆單元,該樹脂(C)不均勻地分布至該感光化 射線或感放射線樹脂薄膜的表面層,及當該沉浸媒質爲水 時,所形成的感光化射線或感放射線樹脂薄膜可提高在光 阻薄膜表面上對水之後退接觸角和該沉浸液體的流動性。 該感光化射線或感放射線樹脂薄膜的後退接觸角在曝 光期間的溫度(通常在室溫23±3°c下)及濕度45±5%下從60 至90°較佳,65°或更大更佳,70°或更大又更佳。 可藉由適當地調整在該感光化射線或感放射線樹脂組 成物中的樹脂(C)之含量來使用其,以提供具有後退接觸角 在上述範圍內的感光化射線或感放射線樹脂薄膜,但是其 含量從0.01至10質量%較佳,從0.1至5質量%更佳,以 該感光化射線或感放射線樹脂組成物的全部固體含量爲 準。如上所述,該樹脂(C)不均勻地分布至界面,但是不像 界面活性劑,其在分子中不需要具有必需的親水性基團及 可不促成極性/非極性物質的均勻混合。 在該沉浸曝光步驟中’該沉浸液體需要隨著以高速掃 。 重而 動角描 移觸掃 上接速 圓的高 晶下的 在態頭 而狀光 動態曝 移動該 之在隨 頭膜追 光薄滴 曝阻液 的光讓 案該有 圖與具 光體要 曝液需。 成浸阻能 形沉光性 及該該之 圓,及餘 晶此’殘 描因要無 -99- 201033733 該樹脂(C)具有至少氟原子或矽原子的任一個,藉此提 高在該光阻表面上的疏水性(水流動性)及減少顯影殘餘物 (浮渣)。 當該樹脂(C)爲具有複數個極性轉換基團及具有至少 氟原子或矽原子的任一個之樹脂時,該氟原子可爲在式 (KB-1)中的XkM及Xkb2之吸電子基團。 在該樹脂(C)中的氟原子或矽原子可存在於該樹脂的 主鏈中或可取代在側鏈上。 該樹脂(C)爲具有含氟原子的烷基、含氟原子的環烷基 β 或含氟原子的芳基作爲該含氟原子部分結構之樹脂較佳。 該含氟原子的烷基(具有碳數1至10較佳,從1至4 更佳)爲具有至少一個氫原子由氟原子置換之線性或分支 烷基及可進一步具有其它取代基。 該含氟原子的環烷基爲具有至少一個氫原子由氟原子 置換之單環或多環的環烷基及可進一步具有其它取代基。 該含氟原子的芳基爲具有至少一個氫原子由氟原子置 換之芳基(例如,苯基、萘基)及可進一步具有其它取代基。® 該含氟原子的烷基、含氟原子的環烷基及含氟原子的 芳基之較佳實施例包括由下列式(F2)至(F4)所表示的基 團,但是本發明不限於此。Rk2 represents an alkyl group, a cycloalkyl group, an aryl group or a group having a polar conversion group, with the proviso that Rk1 and Rk2 all have two or more polar conversion groups.附 Incidentally, as described above, when used in the present invention, the ester group directly bonded to the main chain of the repeating unit represented by the formula (K0) is not contained in the polarity converting group. The repeating unit (c) is not limited as long as it is a repeating unit obtained by polymerization (such as addition polymerization, condensation polymerization, and addition condensation), but obtained by addition polymerization of a carbon-carbon double bond. The repeating unit is preferred. Examples thereof include an acrylate-based repeating unit (including a system having a substituent at a ct- or /3-position), a styrene-based repeating unit (included in an alpha- or @cold-position) a system having a substituent), a vinyl ether-based repeating unit, a decene-based repeating unit, and a maleic acid derivative (for example, maleic anhydride or a derivative thereof, maleimide) ) Repeat the unit. Acrylate-based repeating unit, styrene-based repeating unit, vinyl ether-based repeating unit, and decene-based repeating unit; acrylate-based weight The coating unit, the vinyl ether-based repeating unit and the decene-based repeating unit are more preferable; and the repeating unit based on the acrylic acid-98-201033733 ester is the best. The resin (C) contained in the sensitized ray or radiation sensitive resin composition of the present invention includes a repeating unit having at least one of a fluorine atom or a ruthenium atom. Due to the repetitive unit, the resin (C) is unevenly distributed to the surface layer of the sensitized ray or the radiation-sensitive resin film, and when the immersion medium is water, the formed sensitized ray or radiation-sensitive resin film can be formed. The water receding contact angle and the fluidity of the immersion liquid on the surface of the photoresist film are increased. The receding contact angle of the photosensitive ray or the radiation sensitive resin film is preferably from 60 to 90 °, 65 ° or more at a temperature during exposure (usually at room temperature of 23 ± 3 ° C) and a humidity of 45 ± 5%. More preferably, 70° or more is better. It can be used by appropriately adjusting the content of the resin (C) in the sensitized ray or the radiation sensitive resin composition to provide a sensitized ray or a radiation sensitive resin film having a receding contact angle within the above range, but The content thereof is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 5% by mass, based on the total solid content of the sensitized ray or the radiation-sensitive resin composition. As described above, the resin (C) is unevenly distributed to the interface, but unlike the surfactant, it does not need to have a necessary hydrophilic group in the molecule and may not contribute to uniform mixing of the polar/nonpolar substance. In the immersion exposure step, the immersion liquid needs to be swept with high speed. The moving and moving angles are touched by the high-crystal under the high-speed crystal. The dynamic exposure of the light is moved in the light of the thin film of the film with the head film. To be exposed. The immersion resistance-shaped luminescence and the circle, and the residual crystals are not-99-201033733. The resin (C) has at least one of a fluorine atom or a ruthenium atom, thereby enhancing the light. Hydrophobicity (water flow) on the surface and reduction of development residue (scum). When the resin (C) is a resin having a plurality of polarity-converting groups and having at least one of a fluorine atom or a ruthenium atom, the fluorine atom may be an electron-withdrawing group of XkM and Xkb2 in the formula (KB-1). group. The fluorine atom or the ruthenium atom in the resin (C) may be present in the main chain of the resin or may be substituted on the side chain. The resin (C) is preferably a resin having a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl β group or a fluorine atom-containing aryl group as the fluorine atom-containing partial structure resin. The fluorine atom-containing alkyl group (having preferably having a carbon number of 1 to 10, more preferably 1 to 4) is a linear or branched alkyl group having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. The fluorine atom-containing cycloalkyl group is a monocyclic or polycyclic cycloalkyl group having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. The fluorine atom-containing aryl group is an aryl group (e.g., phenyl group, naphthyl group) having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. Preferred examples of the fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group include groups represented by the following formulas (F2) to (F4), but the invention is not limited thereto. this.

ReeRee

^ ResH—«Θ7^ ResH—«Θ7

Re3--OHRe3--OH

Rfi2 Ree (F3) (F4) -100- 201033733 在式(F2)至(F4)中,R57至R68各者各自獨立地代表氫 原子、氟原子、線性或分支烷基(具有碳數1至4的線性或 分支烷基較佳)或芳基(具有碳數6至14的芳基較佳),其限 制條件爲R57至R61之至少一個、R62至R64之至少一個及 R65至R68之至少一個爲氟原子或具有至少一個氫原子由氟 原子置換的烷基(具有碳數1至4較佳)。最好R57至R6I及 R65至R67全部爲氟原子。R62、R63及R68各者爲具有至少 一個氫原子由氟原子置換的烷基較佳(具有碳數1至4較 〇 佳),具有碳數1至4的全氟烷基更佳。R62及R63可彼此 結合以形成環。 由式(F2)所表示的基團之特定實施例包括對-氟苯 基、五氟苯基及3, 5-二(三氟甲基)苯基。 由式(F3)所表示的基團之特定實施例包括三氟甲基、 五氟丙基、五氟乙基、七氟丁基、六氟異丙基、七氟異丙 基、六氟(2-甲基)異丙基、九氟丁基、八氟異丁基、九氟己 基、九氟三級丁基、全氟異戊基、全氟辛基、全氟(三甲基) ® 己基、2,2,3,3-四氟環丁基及全氟環己基。在這些當中’六 氟異丙基、七氟異丙基、六氟(2 -甲基)異丙基、八氣異丁基、 九氟三級丁基及全氟異戊基較佳’且六氟異丙基及七氟異 丙基更佳。 由式(F4)所考示的基團之特定實施例包括 -c(cf3)2oh 、 -C(C2F5)2OH 、 -c(cf3)(ch3)oh 及 -ch(cf3)oh,且-c(cf3)2oh 較佳。 該樹脂(C)爲具有烷基矽烷基結構(三院基砂院基較佳) -101- 201033733 或環狀矽氧烷結構作爲該含矽原子的部分結構之樹脂較 佳。 該烷基矽烷基結構及環狀矽氧烷結構的特定實施例包 括由下列式(CS-1)至(CS-3)所表示的基團,但是本發明不限 於此。Rfi2 Ree (F3) (F4) -100- 201033733 In the formulae (F2) to (F4), each of R57 to R68 independently represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group (having a carbon number of 1 to 4) Preferably, the linear or branched alkyl group or the aryl group (the aryl group having 6 to 14 carbon atoms) is at least one of R57 to R61, at least one of R62 to R64 and at least one of R65 to R68. It is a fluorine atom or an alkyl group having at least one hydrogen atom replaced by a fluorine atom (preferably having a carbon number of 1 to 4). Preferably, all of R57 to R6I and R65 to R67 are fluorine atoms. Each of R62, R63 and R68 is preferably an alkyl group having at least one hydrogen atom substituted by a fluorine atom (having preferably a carbon number of 1 to 4), and more preferably a perfluoroalkyl group having a carbon number of 1 to 4. R62 and R63 may be bonded to each other to form a ring. Specific examples of the group represented by the formula (F2) include p-fluorophenyl, pentafluorophenyl and 3,5-bis(trifluoromethyl)phenyl. Specific examples of the group represented by the formula (F3) include trifluoromethyl, pentafluoropropyl, pentafluoroethyl, heptafluorobutyl, hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro ( 2-methyl)isopropyl, nonafluorobutyl, octafluoroisobutyl, nonafluorohexyl, nonafluorotributyl, perfluoroisopentyl, perfluorooctyl, perfluoro(trimethyl) Hexyl, 2,2,3,3-tetrafluorocyclobutyl and perfluorocyclohexyl. Among these, 'hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro(2-methyl)isopropyl, octaisobutyl, nonafluorotributyl and perfluoroisopentyl are preferred' and Hexafluoroisopropyl and heptafluoroisopropyl are preferred. Specific examples of groups to be evaluated by formula (F4) include -c(cf3)2oh, -C(C2F5)2OH, -c(cf3)(ch3)oh, and -ch(cf3)oh, and -c (cf3) 2oh is preferred. The resin (C) is preferably a resin having an alkyl fluorenyl group structure (preferably a three-compartment based sand yard base) - 101 - 201033733 or a cyclic siloxane structure as a partial structure of the ruthenium atom-containing. Specific examples of the alkyl fluorenyl structure and the cyclic siloxane structure include groups represented by the following formulae (CS-1) to (CS-3), but the invention is not limited thereto.

Sl~Rl4 (CS-1) 在式(CS-1)至(CS-3)中,R12至R26各者各自獨立地代 表線性或分支烷基(具有碳數1至20較佳)或環烷基(具有碳 數3至20較佳)。 L3S L5各者代表單鍵或二價連結基團。該二價連結基 團爲選自於由下列所組成之群的單獨基團或二或更多個基 團之組合:伸烷基、伸環烷基、伸苯基、醚基團、硫醚基 團 '羰基、酯基團、醯胺基團、胺基甲酸酯基團及伸脲基。 η代表整數1至5。η爲整數2至4較佳。 由式(F2)至(F4)及式(CS-1)至(CS-3)所表示的基團被 包含在丙烯酸酯或甲基丙烯酸酯重覆單元中較佳。 下列提出重覆單元(c)的特定實施例,但是本發明不限 於此。Ra代表氫原子、氟原子、甲基或三氟甲基。 -102- 201033733Sl~Rl4 (CS-1) In the formulae (CS-1) to (CS-3), each of R12 to R26 independently represents a linear or branched alkyl group (having preferably a carbon number of 1 to 20) or a naphthenic ring. Base (having a carbon number of 3 to 20 is preferred). Each of L3S L5 represents a single bond or a divalent linking group. The divalent linking group is a single group selected from the group consisting of or a combination of two or more groups: an alkyl group, a cycloalkyl group, a phenyl group, an ether group, a thioether. The group 'carbonyl, ester group, guanamine group, urethane group and ureido group. η represents an integer of 1 to 5. It is preferable that η is an integer of 2 to 4. The groups represented by the formulae (F2) to (F4) and the formulae (CS-1) to (CS-3) are preferably contained in the acrylate or methacrylate repeating unit. The specific embodiment of the repeating unit (c) is proposed below, but the invention is not limited thereto. Ra represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. -102- 201033733

-103- 201033733-103- 201033733

-104- 201033733 ❹-104- 201033733 ❹

OO

.Ra 作 0^0.Ra for 0^0

Ο、Oh,

RaRa

Jr-γτTJr-γτT

C3F7C3F7

^l^J> 〇^C3F7 F3°Y° Ογ cf3^l^J> 〇^C3F7 F3°Y° Ογ cf3

CeF7 JC^\) -r^rCeF7 JC^\) -r^r

。七:' f3c-(. Seven: 'f3c-(

P3C J ^cf3P3C J ^cf3

FaC 0人。FaC 0 people.

在該樹脂(C)由, )甲 M重覆單元(c)的含量從10至1〇〇莫 耳%較佳’從2〇至1〇〇替tr 王 U冥耳。/«更佳,從30至100莫耳%又 更佳及從40至l〇〇:^-B*n _ 臭耳%最佳,以在該樹脂(C)中的全部重 覆單元爲準。 -105- 201033733 該重覆單元(c,)的含量從10至100莫耳%較佳從2〇 至1〇0莫耳%更佳’從30至100莫耳%又更佳及從4〇至1〇〇 莫耳%最佳,以在該樹脂(C)中的全部重覆單元爲準。 該重覆單兀(c*)的含量從1 〇至90莫耳%較佳從1 5 至85莫耳%更佳,從20至80莫耳%又更佳及從25至75 莫耳%最佳,以在該樹脂(C)中的全部重覆單元爲準。該具 有至少氟原子或矽原子的任一個之重覆單元(其與重覆單 元(c*)—起使用)的含量從10至9〇莫耳%較佳,從Η至85 莫耳/。更佳,從20至80旲耳%又更佳及從25至75莫耳% Q 最佳’以在該樹脂(C)中的全部重覆單元爲準。 該重覆單兀(C”)的含量從10至1〇〇莫耳%較佳,從20 至1〇〇莫耳%更佳’從30至100莫耳%又更佳及從4〇至1〇〇 莫耳%最佳,以在該樹脂(C)中的全部重覆單元爲準。 該樹脂(C)可進一步包括重覆單元(cl),其具有至少氟 原子或矽原子的任一個及與該重覆單元(c,)及(c,,)不同。 在該重覆單元(cl)中的氟原子或矽原子可存在於樹脂 主鏈中或可取代在側鏈上。 © 在該重覆單元(cl)中的含氟原子部分結構包括與上述 描述的那些相同’及氟原子可直接鍵結至該部分結構或可 經由選自於由下列所組成之群的單獨基團或二或更多個基 團之組合來鍵結:伸烷基、伸苯基、醚基團、硫醚基團、 鑛基、酯基團、醢胺基團、胺基甲酸酯基團及伸脲基。該 含氟原子的部分結構爲由式(F2)至(F4)所表示之基團較佳。 下列爲合適於作爲該重覆單元(cl)的含氟原子部分結 -106- 201033733 構。In the resin (C), the content of the M-recovering unit (c) is from 10 to 1 mol%, preferably from 2 〇 to 1 〇〇. /«Better, from 30 to 100 mol% and more preferably from 40 to l〇〇: ^-B*n _ odor % is optimal, based on all repeating units in the resin (C) . -105- 201033733 The content of the repeating unit (c,) is from 10 to 100 mol%, preferably from 2 〇 to 1 〇 0 mol%, more preferably from 30 to 100 mol%, and more preferably from 4 〇. The optimum amount to 1 mol% is based on all the repeating units in the resin (C). The content of the repeating unitary crucible (c*) is preferably from 1 90 to 90 mol%, more preferably from 15 to 85 mol%, even more preferably from 20 to 80 mol% and more preferably from 25 to 75 mol%. Most preferably, all of the repeating units in the resin (C) are taken as the standard. The content of the repeating unit having at least one of fluorine atoms or germanium atoms (used in combination with the repeating unit (c*)) is preferably from 10 to 9 mol%, from Η to 85 mol%. More preferably, from 20 to 80 %% and more preferably from 25 to 75 mol%, Q is optimally determined by all the repeating units in the resin (C). The content of the repeated single crucible (C") is preferably from 10 to 1 mol%, more preferably from 20 to 1 mol%, from 30 to 100 mol%, and more preferably from 4 to 1 mol% is optimal, which is based on all the repeating units in the resin (C). The resin (C) may further include a repeating unit (cl) having at least a fluorine atom or a halogen atom. One and different from the repeating units (c,) and (c,.) The fluorine atom or the halogen atom in the repeating unit (cl) may be present in the resin main chain or may be substituted on the side chain. The fluorine atom-containing partial structure in the repeating unit (cl) includes the same as those described above and the fluorine atom may be directly bonded to the partial structure or may be via a separate group selected from the group consisting of the following: Or a combination of two or more groups to bond: alkyl, phenyl, ether, thioether, ortho, ester, guanamine, urethane groups And a urea group. The partial structure of the fluorine atom is preferably a group represented by the formulae (F2) to (F4). The following is suitable for the fluorine as the repeating unit (cl) -106-201033733 junction structure sub-portions.

在該等式中,Rio及Rii各者各自獨立地代表氫原子、 氟原子或烷基(具有碳數1至4的線性或分支烷基較佳;該 〇 具有取代基的烷基特別包括氟化的烷基)。 W3至W6各者各自獨立地代表包含至少一或多個氟原 子的有機基團。特別是,該有機基團包括(F2)至(F4)之原子 基團。 除了這些重覆單元外,具有下列單元的樹脂亦可合適。 R4 RgIn the formula, each of Rio and Rii independently represents a hydrogen atom, a fluorine atom or an alkyl group (a linear or branched alkyl group having a carbon number of 1 to 4 is preferred; the alkyl group having a substituent of the oxime particularly includes fluorine Alkyl). Each of W3 to W6 independently represents an organic group containing at least one or more fluorine atoms. In particular, the organic group includes atomic groups of (F2) to (F4). In addition to these repetitive units, a resin having the following units may also be suitable. R4 Rg

(C-II) (ΟΙΠ) 在該等式中,R4至R7各者各自獨立地代表氫原子、氟 原子或烷基(具有碳數1至4的線性或分支烷基較佳;該具 有取代基的烷基特別包括氟化的烷基),其限制條件爲R4 至R7之至少一個代表氟原子。R4與R5或R6與r7可形成 環。 Q代表脂環族結構。該脂瓌族結構可爲單環或多環及 -107- 201033733 可具有取代基。該單環脂環族結構爲具有碳數3至9的環 烷基較佳,及其實施例包括環戊基、環己基、環丁基及環 辛基。該多環脂環族結構的實施例包括具有雙環、三環或 四環結構及具有碳數5或更多的基團。具有碳數6至20的 環烷基較佳,及其實施例包括金剛烷基、降萡基、二環戊 基、三環癸基及四環十二烷基。附隨地,在該環烷基中的 部分碳原子可由雜原子(諸如氧原子)置換。該Q的脂環族 結構爲具有碳數5至9之脂環族結構較佳。 W2代表包含至少一個氟原子的有機基團。特別是,該 有機基團包括(F2)至(F4)之原子基團。 L2代表單鍵或二價連結基團。該二價連結基團爲經取 代或未經取代的伸芳基、經取代或未經取代的伸烷基、經 取代或未經取代的伸環烷基、-〇-、-S02-、-CO-、-N(R)-(其 中R代表氫原子或烷基)、-NHS02-、或藉由結合複數個這 些基團所形成的二價連結基團。 在該重覆單元(cl)中之含矽原子的部分結構包括與上 述描述的那些相同,及由式(CS-1)至(CS-3)所表示的基團較 佳。 該重覆單元(cl)爲以(甲基)丙烯酸酯爲基礎的重覆單 元較佳。 下列提出該重覆單元(cl)的特定實施例,但是本發明 不限於此。在特定的實施例中,Xi代表氫原子、-CH3、-F 或- CF3;及X2代表-F或- CF3。 -108- 201033733(C-II) (ΟΙΠ) In the formula, each of R4 to R7 independently represents a hydrogen atom, a fluorine atom or an alkyl group (a linear or branched alkyl group having a carbon number of 1 to 4 is preferred; The alkyl group includes, in particular, a fluorinated alkyl group, with the proviso that at least one of R4 to R7 represents a fluorine atom. R4 and R5 or R6 and r7 form a ring. Q represents an alicyclic structure. The lipid steroid structure may be monocyclic or polycyclic and -107-201033733 may have a substituent. The monocyclic alicyclic structure is preferably a cycloalkyl group having 3 to 9 carbon atoms, and examples thereof include a cyclopentyl group, a cyclohexyl group, a cyclobutyl group and a cyclooctyl group. Examples of the polycyclic alicyclic structure include a group having a bicyclic, tricyclic or tetracyclic structure and having a carbon number of 5 or more. The cycloalkyl group having 6 to 20 carbon atoms is preferred, and examples thereof include adamantyl group, norbornyl group, dicyclopentyl group, tricyclodecyl group and tetracyclododecyl group. Incidentally, a part of the carbon atoms in the cycloalkyl group may be replaced by a hetero atom such as an oxygen atom. The alicyclic structure of the Q is preferably an alicyclic structure having a carbon number of 5 to 9. W2 represents an organic group containing at least one fluorine atom. In particular, the organic group includes atomic groups of (F2) to (F4). L2 represents a single bond or a divalent linking group. The divalent linking group is a substituted or unsubstituted extended aryl group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted stretched alkyl group, -〇-, -S02-,- CO-, -N(R)- (wherein R represents a hydrogen atom or an alkyl group), -NHS02-, or a divalent linking group formed by combining a plurality of these groups. The partial structure of the ruthenium containing atom in the repeating unit (cl) includes the same as those described above, and the groups represented by the formulae (CS-1) to (CS-3) are preferred. The repeating unit (cl) is preferably a (meth) acrylate based repeating unit. A specific embodiment of the repeating unit (cl) is proposed below, but the present invention is not limited thereto. In a particular embodiment, Xi represents a hydrogen atom, -CH3, -F or -CF3; and X2 represents -F or -CF3. -108- 201033733

FsFs

-109- 201033733-109- 201033733

Ο-^ΟΟ-^Ο

οο

f3c-4-cf3 十 α=3F3c-4-cf3 ten α=3

^c+cf3 5。十 CF3 OH^c+cf3 5. Ten CF3 OH

R=CH3i C2H5. C3Hr, C4H9R=CH3i C2H5. C3Hr, C4H9

-110- 201033733 該樹脂(c)可進一步包括至少一個選自於下列基團 (X)、(y)及(Z)的基團: (X)可溶於鹼的基團; (y) 能藉由鹼性顯影劑之作用分解’以增加在驗性顯影 劑中的溶解度之基團;及 (z) 能藉由酸作用分解的基團。 該(X)可溶於鹼的基團之實施例包括酚羥基、羧酸基 〇 團、氟化的醇基團、磺酸基團、磺醯胺基團、楓基醯亞胺 基團、(烷基颯基)(烷基羰基)亞甲基、(烷基楓基)(烷基羰 基)醯亞胺基團、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞 胺基團、雙(烷基颯基)亞甲基、雙(烷基颯基)醯亞胺基團、 三(烷基羰基)亞甲基及三(烷基碾基)亞甲基。 較佳可溶於鹼的基團包括氟化的醇基團(六氟異丙醇 較佳)、磺醯亞胺基團及雙(羰基)亞甲基。 Q 該具有(x)可溶於鹼的基團之重覆單元包括可溶於鹼 的基團直接鍵結至樹脂主鏈之重覆單元(諸如藉由丙烯酸 或甲基丙嫌酸的重覆單元)、可溶於鹼的基團經由連結基團 鍵結至樹脂主鍵的重覆單元、及在聚合時使用含可溶於鹼 的基團之聚合起始劑或鏈轉移劑將可溶於鹼的基團引進聚 合物鏈終端中之重覆單元,且這些重覆單元全部較佳。 該具有(X)可溶於鹼的基團之重覆單元的含量從1至5〇 莫耳%較佳,從3至35莫耳%更佳,從5至3〇莫耳%又更 佳,以在該樹脂(C)中的全部重覆單元爲準。 -111- 201033733 下列提出該具有(X)可溶於鹼的基團之重覆單元的特 定實施例,但是本發明不限於此。在特定的實施例中,Rx 代表 H、CH3、CH2OH 或 CF3。-110- 201033733 The resin (c) may further comprise at least one group selected from the group consisting of the following groups (X), (y) and (Z): (X) a group soluble in a base; (y) capable a group which decomposes by the action of an alkali developer to increase the solubility in the test developer; and (z) a group which can be decomposed by an acid action. Examples of the (X) alkali-soluble group include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a maple quinone imine group, (alkyl mercapto) (alkylcarbonyl) methylene, (alkyl maple) (alkylcarbonyl) fluorenylene group, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl) fluorene An amine group, a bis(alkylindenyl)methylene group, a bis(alkylmercapto)anthracene group, a tri(alkylcarbonyl)methylene group, and a tris(alkyl-based)methylene group. Preferred base-soluble groups include fluorinated alcohol groups (preferably hexafluoroisopropanol), sulfonimide groups, and bis(carbonyl)methylene groups. Q The repeating unit having (x) a base-soluble group includes a repeating unit in which an alkali-soluble group is directly bonded to a resin main chain (such as by repeated acid or acrylic acid) a unit), a repeating unit in which a base-soluble group is bonded to a resin primary bond via a linking group, and a polymerization initiator or a chain transfer agent containing a base which is soluble in a base to be soluble in a polymerization The groups of the base are introduced into the repeating unit in the terminal of the polymer chain, and all of these repeating units are preferred. The content of the repeating unit having (X) an alkali-soluble group is preferably from 1 to 5 mol%, more preferably from 3 to 35 mol%, and even more preferably from 5 to 3 mol%. The total repeating unit in the resin (C) shall prevail. -111-201033733 The specific embodiment of the repeating unit having the (X) alkali-soluble group is proposed below, but the invention is not limited thereto. In a particular embodiment, Rx represents H, CH3, CH2OH or CF3.

該包含在樹脂(C)中、能藉由鹼性顯影劑之作用分解以 增加在鹼性顯影劑中的溶解度之基團(y)的實施例包括含 內酯結構的基團、酸酐基團及醯亞胺基團,且含內酯結構 -112- 201033733 的基團較佳。 該具有能藉由鹼性顯影劑之作用分解以增加在鹼性顯 影劑中的溶解度之基團(y)的重覆單元爲在具有至少二或 更多個極性轉換基團的重覆單元(c)中僅具有一個極性轉 換基團之重覆單元較佳;及能藉由鹼性顯影劑之作用分解 以增加在鹼性顯影劑中的溶解度之基團(y)鍵結至樹脂主 鏈的重覆單元(諸如,藉由丙烯酸酯或甲基丙烯酸酯的重覆 單元),與在聚合時使用包含基團(y)的聚合起始劑或鏈轉移 〇 劑將能增加在鹼性顯影劑中的溶解度之基團(y)引進聚合 物鏈終端中的重覆單元二者較佳。 該具有能增加在驗性顯影劑中的溶解度之基團(y)的 重覆單元之含量從1至50莫耳%較佳,從3至35莫耳%更 佳’從5至20莫耳%又更佳,以在該樹脂(C)中的全部重覆 單元爲準。 該具有能增加在鹼性顯影劑中的溶解度之基團(y)的 重覆單元之特定實施例與具有對該組分(A)的樹脂所描述 之內酯結構的那些重覆單元相同。 該包含在樹脂(C)中、具有能藉由酸作用分解的基團(z) 之重覆單元的實施例與具有對該組分(A)的樹脂所描述之 可酸分解的基團之那些重覆單元相同。該可酸分解的基團 爲芡基酯基團、烯醇酯基團、乙縮醛酯基團、三級烷基酯 基團或其類似基團較佳,三級烷基酯基團更佳。 該具有可酸分解的基團之重覆單元爲由下列式(CAI) 所表示的重覆單元較佳: -113- 201033733 f Rx, (_ cr^o--rx2 RX3 在式(CAI)中,Xat代表氫原子、甲基或由-CH2-R9所 表示的基團。R9代表羥基或單價有機基團,及其實施例包 括具有碳數5或較少的烷基及醯基。該單價有機基團爲具 有碳數3或較少的烷基較佳,甲基更佳。Xai爲氫原子、甲 基、三氟甲基或羥甲基較佳。 T代表單鍵或二價連結基團。Examples of the group (y) which is contained in the resin (C) and which can be decomposed by the action of an alkali developer to increase the solubility in the alkaline developer include a group having a lactone structure, an acid anhydride group The group having a quinone imine group and having a lactone structure of -112 to 201033733 is preferred. The repeating unit having a group (y) capable of decomposing by an action of an alkali developer to increase solubility in an alkali developer is a repeating unit having at least two or more polar converting groups ( c) a repeating unit having only one polarity converting group; and a group (y) capable of decomposing by an action of an alkali developer to increase solubility in an alkali developer to the resin backbone Repeating unit (such as by repeating unit of acrylate or methacrylate), and using a polymerization initiator or chain transfer agent containing a group (y) during polymerization, can increase the alkali development It is preferred that the solubility group (y) in the agent is introduced into the repeating unit in the polymer chain terminal. The content of the repeating unit having a group (y) capable of increasing the solubility in the test developer is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, and from 5 to 20 mol. % is even better, based on all the repeating units in the resin (C). The specific embodiment of the repeating unit having the group (y) capable of increasing the solubility in the alkaline developer is the same as those having the lactone structure described for the resin of the component (A). An embodiment of the repeating unit comprising a group (z) capable of decomposing by an acid in the resin (C) and an acid-decomposable group described by the resin of the component (A) Those repeating units are the same. The acid-decomposable group is preferably a mercaptoester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like, and the tertiary alkyl ester group is more good. The repeating unit having an acid-decomposable group is preferably a repeating unit represented by the following formula (CAI): -113- 201033733 f Rx, (_cr^o--rx2 RX3 in the formula (CAI) Xat represents a hydrogen atom, a methyl group or a group represented by -CH2-R9. R9 represents a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having a carbon number of 5 or less and a mercapto group. The organic group is preferably an alkyl group having a carbon number of 3 or less, and more preferably a methyl group. Xai is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. T represents a single bond or a divalent linking group. group.

Rx!至Rx3各者各自獨立地代表烷基(線性或分支)或環 烷基(單環或多環)。 出自Rm至Rx3的二個成員可結合以形成環烷基(單環 或多環)》 該T的二價連結基團之實施例包括伸烷基、-COO-Rt-基團及-O-Rt-基團,其中Rt代表伸烷基或伸環烷基。 T爲單鍵或- COO-Rt-基團較佳。Rt爲具有碳數1至5 的伸烷基較佳,-CH2-基團或-(CH2)3-基團更佳。 該11\1至Rx3的烷基爲具有碳數1至4的烷基較佳, 諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及三 級丁基。 該11\1至Rx3的環烷基爲下列較佳··單環的環烷基, 諸如環戊基及環己基;或多環的環烷基,諸如降萡基、四 環癸基、四環十二烷基及金剛烷基。 -114- 201033733 藉由結合出自Rxi至Rx3的二個成員所形成的環烷基 爲下列較佳:單環的環烷基,諸如環戊基及環己基;或多 環的環烷基,諸如降萡基、四環癸基、四環十二烷基及金 剛烷基;具有碳數5至6之單環的環烷基更佳。Each of Rx! to Rx3 independently represents an alkyl group (linear or branched) or a cycloalkyl group (monocyclic or polycyclic). Two members from Rm to Rx3 may be combined to form a cycloalkyl group (monocyclic or polycyclic). Examples of the divalent linking group of T include an alkylene group, a -COO-Rt- group, and -O- An Rt- group wherein Rt represents an alkylene or cycloalkyl group. It is preferred that T is a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a -CH2- group or a -(CH2)3- group. The alkyl group of 11\1 to Rx3 is preferably an alkyl group having a carbon number of 1 to 4, such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group and a tertiary butyl group. The cycloalkyl group of 11\1 to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclic fluorenyl group, or a tetraalkyl group. Cyclododecyl and adamantyl. -114-201033733 The cycloalkyl group formed by combining two members derived from Rxi to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as A thiol group, a tetracyclic fluorenyl group, a tetracyclododecyl group, and an adamantyl group; a cycloalkyl group having a monocyclic ring having 5 to 6 carbon atoms is more preferable.

Rxi爲甲基或乙基及Rx2與Rx3結合以形成上述描述的 環烷基之具體實施例較佳。 這些基團各者可具有取代基,及該取代基的實施例包 括烷基(具有碳數1至4)、鹵素原子、羥基、烷氧基(具有 〇 碳數1至4)、羧基及烷氧基羰基(具有碳數2至6)。該取代 基的碳數爲8或較少較佳。 在該樹脂(C)中’該具有能藉由酸作用分解的基團(z) 之重覆單元的含量從1至80莫耳%較佳,從10至80莫耳 %更佳,從2 0至6 0莫耳%又更佳,以在該樹脂(c )中的全 部重覆單元爲準。藉由具有能藉由酸作用分解的基團(z), 可改良LWR » 該樹脂(C)可進一步包含其它重覆單元。其它重覆單元 d ^ 的較佳具體實例包括下列: (cyl)具有氟原子及/或矽原子且對酸安定及略微可溶 或不溶於鹼性顯影劑中之重覆單元; (cy2)不具有氟原子及矽原子且對酸安定及略微可溶 或不溶於鹼性顯影劑中的重覆單元; (cy3)具有氟原子及/或矽原子且具有除了上述(x)及(z) 外的極性基團之重覆單元;及 (cy4)不具有氟原子及矽原子且具有除了上述(x)& (z) -115- 201033733 外的極性基團之重覆單元。 在(cyl)及(cy2)之重覆單元中的用詞"略微可溶或不溶 於鹼性顯影劑中"意謂著(cyl)及(cy 2)不包含可溶於鹸的基 團或能藉由酸或鹼性顯影劑之作用產生可溶於鹼的基團之 基團(例如,可酸分解的基團或極性轉換基團)。 該重覆單元(cyl)及(cy2)具有不含極性基團的脂環烴 結構較佳》 下列描述該重覆單元(cyl)至(cy4)的較佳具體實例。 該重覆單元(cyl)及(cy2)爲由下列式(CIII)所表示的重 覆單元較佳:Particular embodiments in which Rxi is a methyl or ethyl group and Rx2 is combined with Rx3 to form a cycloalkyl group as described above are preferred. Each of these groups may have a substituent, and examples of the substituent include an alkyl group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (having a carbon number of 1 to 4), a carboxyl group and an alkane. Oxycarbonyl (having a carbon number of 2 to 6). The substituent has a carbon number of 8 or less. In the resin (C), the content of the repeating unit having the group (z) capable of decomposing by acid action is preferably from 1 to 80 mol%, more preferably from 10 to 80 mol%, from 2 0 to 60% of the mole % is more preferable, which is based on all the repeating units in the resin (c). The LWR can be modified by having a group (z) which can be decomposed by an acid action. The resin (C) can further comprise other resurfacing units. Preferred specific examples of the other repeating unit d ^ include the following: (cyl) a repeating unit having a fluorine atom and/or a halogen atom and which is stable to the acid and slightly soluble or insoluble in the alkaline developer; (cy2) a repeating unit having a fluorine atom and a germanium atom and which is stable to the acid and slightly soluble or insoluble in the alkaline developer; (cy3) has a fluorine atom and/or a germanium atom and has in addition to the above (x) and (z) a repeating unit of a polar group; and (cy4) a repeating unit having no fluorine atom or germanium atom and having a polar group other than the above (x) & (z) -115 - 201033733. The term "slightly soluble or insoluble in alkaline developer" in the repetitive unit of (cyl) and (cy2) means that (cyl) and (cy 2) do not contain a group soluble in hydrazine. The group may be a group capable of producing a base-soluble group (for example, an acid-decomposable group or a polar conversion group) by the action of an acid or an alkali developer. The repeating units (cyl) and (cy2) have an alicyclic hydrocarbon structure having no polar group. Preferred Embodiments of the repeating units (cyl) to (cy4) are described below. The repeating units (cyl) and (cy2) are preferably the repeating unit represented by the following formula (CIII):

U3 (cni)U3 (cni)

在式(CIII)中,Re31代表氫原子、可由氟取代的烷基、 氰基或- CH2-0-Rae2基團,其中Rae2代表氫原子、烷基或醯 基。Re31爲氫原子、甲基、羥甲基或三氟甲基較佳,氫原 子或甲基更佳。In the formula (CIII), Re31 represents a hydrogen atom, an alkyl group which may be substituted by fluorine, a cyano group or a -CH2-0-Rae2 group, wherein Rae2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Re31 is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and a hydrogen atom or a methyl group is more preferred.

Rc32代表烷基、環烷基、烯基、環烯基或芳基。這些 基團各者可由一包含矽原子或氟原子等等的基團取代。Rc32 represents an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group or an aryl group. Each of these groups may be substituted by a group containing a halogen atom or a fluorine atom or the like.

Lc3代表單鍵或二價連結基團。 在式(CIII)中,該Re32的烷基爲具有碳數3至20之線 性或分支烷基較佳。 該環烷基爲具有碳數3至20的環烷基較佳。 -116- 201033733 該烯基爲具有碳數3至20的烯基較佳。 該環烯基爲具有碳數3至20的環烯基較佳。 該芳基爲具有碳數6至20的芳基較佳,苯基或萘基更 佳,及這些基團每個可具有取代基。Lc3 represents a single bond or a divalent linking group. In the formula (CIII), the alkyl group of Re32 is preferably a linear or branched alkyl group having 3 to 20 carbon atoms. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. -116-201033733 The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The aryl group is preferably an aryl group having 6 to 20 carbon atoms, more preferably a phenyl group or a naphthyl group, and each of these groups may have a substituent.

Rc3 2爲未經取代的烷基或經氟原子取代的烷基較佳。 該Le3的二價連結基團爲伸烷基(具有碳數1至5較 佳)、氧基、伸苯基或酯鍵(由-COO-所表示的基團)較佳。 該重覆單元(cyl)及(cy2)爲由下列式(C4)或(C5)所表 © 示的重覆單元較佳:Rc3 2 is preferably an unsubstituted alkyl group or an alkyl group substituted with a fluorine atom. The divalent linking group of Le3 is preferably an alkylene group (preferably having a carbon number of 1 to 5), an oxy group, a phenyl group or an ester bond (a group represented by -COO-). The repeating units (cyl) and (cy2) are preferably the repeating unit shown by the following formula (C4) or (C5):

(Rc6)n 在該等式中,R。5代表真有至少一個環狀結構且不具有 羥基或氰基的烴基團。(Rc6)n In this equation, R. 5 represents a hydrocarbon group which has at least one cyclic structure and does not have a hydroxyl group or a cyano group.

Rac代表氫原子、可由氟取代的烷基、氰基或 -CH2_0-Rac2基團,其中Rac2代表氫原子、烷基或醯基。Rac 爲氫原子、甲基、羥甲基或三氟甲基較佳,氫原子或甲基 更佳。 由R。5所擁有的環狀結構包括單環烴基團及多環烴基 團。該單環烴基團的實施例包括具有碳數3至12的環烷基 及具有碳數3至12的環烯基。該單環烴基團爲具有碳數3 至7的單環烴基團較佳。 該多環烴基團包括環積聚的烴基團及交聯的環狀烴基 -117- 201033733 團。該交聯的環狀烴環之實施例包括雙環的烴環、三環的 烴環及四環的烴環。該交聯的烴環亦包括稠和的環狀烴環 (例如,藉由稠和複數個5至8員環烷環所形成的稠環)。 該交聯的環狀烴環之較佳實施例包括降萡基及金剛烷基。 此脂環烴基團可具有取代基,及該取代基的較佳實施 例包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。該鹵素原子爲溴原子、氯原子或氟原子 較佳;及該烷基爲甲基、乙基、丁基或三級丁基較佳。此 烷基可進一步具有取代基,及該烷基可進一步具有的取代 © 基包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。 該保護基團的實施例包括烷基、環烷基、芳烷基、經 取代的甲基、經取代的乙基、烷氧基羰基及芳烷氧基羰基。 該烷基爲具有碳數1至4的烷基較佳;該經取代的甲基爲 甲氧基甲基、甲氧基硫甲基、苄氧基甲基、三級丁氧基甲 基或2-甲氧基乙氧基甲基較佳;該經取代的乙基爲1-乙氧 基乙基或1-甲基-1-甲氧基乙基較佳;該醯基爲具有碳數1 W 至6的脂肪族醯基較佳,諸如甲醯基、乙醯基、丙醯基、 丁醯基、異丁醸基、戊醯基及特戊醯基;及該烷氧基羰基 爲具有碳數1至4的烷氧基羰基較佳。Rac represents a hydrogen atom, an alkyl group which may be substituted by fluorine, a cyano group or a -CH2_0-Rac2 group, wherein Rac2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Rac is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and a hydrogen atom or a methyl group is more preferred. By R. The ring structure possessed by 5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having 3 to 12 carbon atoms and a cycloalkenyl group having 3 to 12 carbon atoms. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having 3 to 7 carbon atoms. The polycyclic hydrocarbon group includes a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group -117-201033733. Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, and a tetracyclic hydrocarbon ring. The crosslinked hydrocarbon ring also includes a fused cyclic hydrocarbon ring (e.g., a fused ring formed by condensing a plurality of 5 to 8 membered cycloalkane rings). Preferred examples of the crosslinked cyclic hydrocarbon ring include a thiol group and an adamantyl group. The alicyclic hydrocarbon group may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. The halogen atom is preferably a bromine atom, a chlorine atom or a fluorine atom; and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The alkyl group may further have a substituent, and the substituent further further possessed by the alkyl group includes a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. Examples of such protecting groups include alkyl groups, cycloalkyl groups, aralkyl groups, substituted methyl groups, substituted ethyl groups, alkoxycarbonyl groups, and aralkyloxycarbonyl groups. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms; the substituted methyl group is a methoxymethyl group, a methoxythiomethyl group, a benzyloxymethyl group, a tertiary butoxymethyl group or 2-methoxyethoxymethyl is preferred; the substituted ethyl group is preferably 1-ethoxyethyl or 1-methyl-1-methoxyethyl; the fluorenyl group has a carbon number 1 W to 6 aliphatic fluorenyl groups are preferred, such as formazan, ethyl fluorenyl, propyl fluorenyl, butyl fluorenyl, isobutyl decyl, pentylene and pentylene; and the alkoxycarbonyl group has a carbon number of 1 The alkoxycarbonyl group to 4 is preferred.

Rc6代表院基、環院基 '嫌基、環嫌基、院氧基碳基或 烷基羰氧基。這些基團每個可由包含矽原子或氟原子等等 之基團取代。 該的烷基爲具有碳數1至20的線性或分支烷基較 -118- 201033733 佳,及該環烷基爲具有碳數3至20的環烷基較佳。 該烯基爲具有碳數3至20的烯基較佳。 該環烯基爲具有碳數3至20的環烯基較佳。 該烷氧基羰基爲具有碳數2至20的烷氧基羰基較佳。 該烷氧基羰基氧基爲具有碳數2至20的烷氧基羰基氧 基較佳。 η代表整數0至_ 5。當η爲整數2或更大時’每個Rc6 可與每個其它Re6相同或不同。 〇 Re6爲未經取代的烷基或經氟原子取代的烷基較佳,三 氟甲基或三級丁基更佳。 該重覆單元(cyl)及(cy2)爲由下列式(CII-AB)所表示 的重覆單元亦較佳:Rc6 represents the base of the hospital, the base of the hospital, the suspected base, the ring base, the oxycarbyl group or the alkylcarbonyloxy group. These groups may each be substituted by a group containing a halogen atom or a fluorine atom or the like. The alkyl group is preferably a linear or branched alkyl group having 1 to 20 carbon atoms, more preferably from -118 to 201033733, and the cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The alkoxycarbonyl group is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms. The alkoxycarbonyloxy group is preferably an alkoxycarbonyloxy group having 2 to 20 carbon atoms. η represents an integer of 0 to _ 5. When η is an integer of 2 or more, 'each Rc6 may be the same as or different from each other Re6. 〇 Re6 is preferably an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom, and a trifluoromethyl group or a tertiary butyl group is more preferable. The repeating units (cyl) and (cy2) are also preferably the repeating unit represented by the following formula (CII-AB):

(C I I -AB) Ο 在式(CII-AB)中,Rcll’及Rcl2’各者各自獨立地代表氫 原子、氰基、鹵素原子或烷基。 zc’代表用來形成包含二個鍵結的碳原子(C-C)之脂環 族結構的原子基團。 式(CII-AB)爲下列式(CII-AB1)或(CII-AB2)較佳: -119- 201033733(C I I -AB) Ο In the formula (CII-AB), each of Rcll' and Rcl2' independently represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group. Zc' represents an atomic group used to form an alicyclic structure of a carbon atom (C-C) containing two bonds. The formula (CII-AB) is preferably the following formula (CII-AB1) or (CII-AB2): -119- 201033733

在式(CII-AB1)及(CII-AB2)中,Rcl3’至 rc16’各者各自 獨立地代表氫原子、鹵素原子、烷基或環烷基。 出自Rcl3’至Re 16’的至少二個成員可結合以形成環。 η代表0或1。 下列提出(cyl)及(cy2)的特定實施例’但是本發明不限 於此。在該等式中,Ra代表H、CH3、CH2〇H、CF3或CN。In the formulae (CII-AB1) and (CII-AB2), each of Rcl3' to rc16' independently represents a hydrogen atom, a halogen atom, an alkyl group or a cycloalkyl group. At least two members from Rcl3' to Re 16' may be combined to form a ring. η represents 0 or 1. Specific embodiments of (cyl) and (cy2) are presented below, but the invention is not limited thereto. In the equation, Ra represents H, CH3, CH2〇H, CF3 or CN.

-120- 201033733 至於(cy3)及(cy4),包含具有羥基或氰基作爲該極性基 團的重覆單元較佳。由於此重覆單元,對顯影劑的親和力 提高。該具有羥基或氰基的重覆單元爲具有由羥基或氰基 取代之脂環烴結構的重覆單元較佳。在已由羥基或氰基取 代的脂環烴結構中之脂環烴結構爲金剛烷基、雙金剛烷基 或降萡基較佳。該已由羥基或氰基取代的脂環烴結構之較 佳實施例包括單羥基金剛烷基、二羥基金剛烷基、單羥基 二金剛烷基、二羥基二金剛烷基及由氰基取代的降萡基。 Ο 該具有此原子基團的重覆單元包括由下列式(CAIIa) 至(CAIId)所表示的重覆單元:-120-201033733 As for (cy3) and (cy4), it is preferred to include a repeating unit having a hydroxyl group or a cyano group as the polar group. Due to this repetitive unit, the affinity for the developer is increased. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure which has been substituted by a hydroxyl group or a cyano group is preferably an adamantyl group, a bisadamantyl group or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure which has been substituted by a hydroxy group or a cyano group include monohydroxyadamantyl, dihydroxyadamantyl, monohydroxydiadamantyl, dihydroxydiadamantyl and substituted by a cyano group. Lowering the base.重 The repeating unit having this atomic group includes a repeating unit represented by the following formulas (CAIIa) to (CAIId):

在式(CAIIa)至(CAIId)中,R!c代表氫原子、甲基、三 氟甲基或羥甲基。 R2c至R4c各者各自獨立地代表氫原子、羥基或氰基, 其限制條件爲R2c至R4c之至少一個代表羥基或氰基。出 自R2c至R4C的一或二個成員爲羥基而剩餘爲氫原子之結 構較佳。在式(CAIIa)中,出自R2c至R4c的二個成員爲羥 基及剩餘爲氫原子更佳。 下列提出該具有羥基或氰基的重覆單元之特定實施 例,但是本發明不限於此。 -121 - 201033733In the formulae (CAIIa) to (CAIId), R!c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. Each of R2c to R4c independently represents a hydrogen atom, a hydroxyl group or a cyano group, with the proviso that at least one of R2c to R4c represents a hydroxyl group or a cyano group. A structure in which one or two members of R2c to R4C are a hydroxyl group and a remaining hydrogen atom is preferred. In the formula (CAIIa), two members derived from R2c to R4c are a hydroxyl group and the remainder is preferably a hydrogen atom. A specific embodiment of the repeating unit having a hydroxyl group or a cyano group is proposed below, but the invention is not limited thereto. -121 - 201033733

^ ηΡ i&OH J&OK^ ηΡ i&OH J&OK

$ 0 oh m 該由(cyl)至(cy4)所表示的重覆單元之含量從5至4〇 莫耳%較佳,從5至30莫耳%更佳,從1〇至25莫耳%又更 佳’以在該樹脂(C)中的全部重覆單元爲準。該樹脂(c)可 具有複數個由(cyl)至(Cy4)所表示的重覆單元。 在該樹脂(C)包含氟原子的實例中,該氟原子含量從5 至8 0質量%較佳’從10至8〇質量%更佳,以該樹脂((:)的 分子量爲準。同樣地,該含氟原子重覆單元佔有從1〇至 1〇〇質量%較佳’從30至1〇〇質量%更佳,以在該樹脂(c) 中的全部重覆單元爲準。 在該樹脂(C)包含矽原子的實例中,該矽原子含量從2 至50質量%較佳,從2至30質量%更佳,以該樹脂(〇:)的 分子量爲準。同樣地,該含砂原子重覆單元佔有從10至 90質量%較佳,從20至80質量%更佳,以在該樹脂(c)中 的全部重覆單元爲準。 該樹脂(C)之標準聚苯乙烯還原的重量平均分子量從 looo 至 100,000 較佳,從 1,〇〇〇 至 50,000 更佳,從 2 000 至15,000又更佳。 類似於該組分(A)的樹脂’在該樹脂(C)中,雜質(諸如 -122- 201033733 金屬)量少當然較佳,但是同樣地,殘餘的單體或寡聚物組 分之含量從0至10質量%較佳,從〇至5質量%更佳,從〇 至1_質量%又更佳。藉由滿足這些條件,可獲得在液體中 無外來物質或靈敏度及其類似性質不隨著時效改變之光阻 組成物。再者’考慮到解析度、光阻外形、側壁光阻圖案、 粗糖度及其類似性質,分子量分布(Mw/Mn,亦稱爲多分散 性)從1至3較佳’從1至2更佳,從1至ι·8又更佳,及 從1至1 · 5最佳。 Ο 至於該樹脂(C)’可使用多種可商業購得的產物,或該 樹脂可藉由普通方法(例如,自由基聚合))合成。該合成方 法的實施例通常包括批次聚合方法,其將單體物種與起始 劑溶解在溶劑中及加熱該溶液,因此達成聚合;及滴入聚 合方法,其在1至10小時內,將包含單體物種與起始劑的 溶液逐滴加入至熱溶劑。滴入聚合方法較佳。該反應溶劑 的實施例包括醚類,諸如二異丙基醚、四氫呋喃、1,4-二 噚烷;酮類,諸如甲基乙基酮及甲基異丁基酮;酯溶劑, ® 諸如醋酸乙酯;醯胺溶劑,諸如二甲基甲醯胺及二甲基乙 醯胺;及之後描述能溶解本發明之組成物的溶劑,諸如醋 酸丙二醇單甲基醚酯(PGME A,亦已知爲1·甲氧基-2-乙醯 氧基丙烷)、丙二醇單甲基醚(PGME,亦已知爲1-甲氧基-2-丙醇)及環己酮。使用與在本發明之感光化射線或感放射線 樹脂組成物中所使用的溶劑相同之溶劑進行聚合更佳。藉 由使用相同溶劑,可抑制在儲存期間產生顆粒。 在惰性氣體環境(諸如氮或氬)中進行該聚合反應較 -123- 201033733 佳。至於該聚合起始劑,使用可商業購得的自由基起始劑 (例如,以偶氮爲基礎的起始劑、過氧化物)開始該聚合。 該自由基起始劑爲以偶氮爲基礎的起始劑較佳,.及具有酯 基團、氰基或羧基之以偶氮爲基礎的起始劑較佳。該起始 劑的較佳實施例包括偶氮二異丁腈、偶氮雙二甲基戊腈及 二甲基2,2’·偶氮雙(2-甲基丙酸酯)。該反應濃度通常從5 至5 0質量%,從3 0至5 0質量%較佳,及該反應溫度通常 從10至150 °C,從30至120 °C較隹,從60至100 °C更佳。 在反應完成後,讓該反應溶液冷卻至室溫及純化。可 © 藉由正常方法進行純化,例如,液體-液體萃取方法,其施 加水洗滌或結合適當溶劑來移除殘餘的單體或寡聚物組 分;在溶液狀態下的純化方法,諸如藉由僅提取具有分子 量不多於特定値的那些來移除之超微濾法;再沉澱方法, 其將該樹脂溶液逐滴加入不良溶劑中以在該不良溶劑中固 化該樹脂’因此移除殘餘的單體及其類似物·,及在固態狀 態下的純化方法’諸如讓藉由過濾分離的樹脂漿體接受以 不良溶劑洗滌的方法。例如,該樹脂藉由讓該反應溶液與 © 一該樹脂略微可溶或不溶的溶劑(不良溶劑,其體積量爲該 反應溶液的1 0倍或較少,從1 〇至5倍較佳)接觸而以固體 沉澱。 在從聚合物溶液中沉澱或再沉澱的操作中所使用之溶 齊!!(沉澱或再沉澱溶劑),若其對聚合物爲不良溶劑時可足 夠’及可使用的溶劑可根據聚合物的種類從例如烴、鹵化 的烴、硝基化合物、醚、酮、酯、碳酸鹽、醇、羧酸、水 -124- 201033733 及包含此溶劑的混合溶劑中適當地選擇。在這些溶劑當 中’包含至少醇(特別是甲醇或其類似物)或水的溶劑作爲 該沉澱或再沉殿溶劑較佳。 可考慮效率、產率及其類似性能適當地選擇所使用的 沉澱或再沉澱溶劑之量,但是通常來說,所使用的量爲每 100質量份的聚合物溶液從100至10,000質量份,從200 至2,000質量份較佳,從300至1,000質量份更佳。 可考慮效率或可操作性來適當地選擇在沉澱或再沉澱 ® 時的溫度,但是其通常在級數0至50 °c下,在鄰近室溫(例 如,大約從20至35 °C)處較佳。可使用普通使用的混合容 器(諸如攪拌槽),藉由已知的方法(諸如批次系統及連續系 統)來進行該沉澱或再沉澱操作。 該經沉澱或再沉澱的聚合物通常接受普通使用的固體 •液體分離(諸如過濾及離心),然後乾燥及使用。使用耐溶 劑性過濾器元件,較佳在壓力下進行過濾。在大氣壓或減 壓下(在減壓下較佳),在溫度大約從30至100 °C下(在級數 3〇至50°C下較佳)進行乾燥。 附隨地,在該樹脂一旦經沉澱及分離後,可再次將該 樹脂溶解於溶劑中,然後讓其與該樹脂略微可溶或不溶的 溶劑接觸。也就是說,於此可使用的方法包括在完成自由 基聚合反應後*將該聚合物帶至與該聚合物略微可溶或不 溶的溶劑接觸,以沉澱出樹脂(步驟a);從該溶液分離出該 樹脂(步驟b);再一次將該樹脂溶解於一溶劑中,以製備一 樹脂溶液A(步驟c);將該樹脂溶液A帶至與該樹脂略微可 -125- 201033733 溶或不溶的溶劑(其體積量少於該樹脂溶液A的l〇倍(5倍 或較少較佳))接觸,以沉澱出一樹脂固體(步驟d);及分離 所沉澱的樹脂(步驟e)。 下列提出該樹脂(C)的特定實施例,但是本發明不限於 此°同樣地,在每種樹脂中之重覆單元(與從在該結構式中 的左邊算起之重覆單元相應)的莫耳比率、重量平均分子量 (Mw)及多分散性(Mw/Mn)顯示在下列表中。 -126- 201033733$ 0 oh m The content of the repeating unit represented by (cyl) to (cy4) is preferably from 5 to 4 〇 mol%, more preferably from 5 to 30 mol%, from 1 25 to 25 mol%. More preferably, the total repeating unit in the resin (C) is taken as the standard. The resin (c) may have a plurality of repeating units represented by (cyl) to (Cy4). In the example in which the resin (C) contains a fluorine atom, the fluorine atom content is preferably from 5 to 80% by mass, more preferably from 10 to 8% by mass, based on the molecular weight of the resin ((:). Preferably, the fluorine atom-containing repeating unit is preferably from 1 〇 to 1% by mass, more preferably from 30 to 1% by mass, based on all of the repeating units in the resin (c). In the example in which the resin (C) contains a halogen atom, the content of the germanium atom is preferably from 2 to 50% by mass, more preferably from 2 to 30% by mass, based on the molecular weight of the resin (〇:). The sand atom-containing repeating unit is preferably from 10 to 90% by mass, more preferably from 20 to 80% by mass, based on all of the repeating units in the resin (c). The standard polyphenylene of the resin (C) The weight average molecular weight of ethylene reduction is preferably from looo to 100,000, more preferably from 1, 〇〇〇 to 50,000, more preferably from 2 000 to 15,000. A resin similar to the component (A) is in the resin (C) Of course, the amount of impurities (such as -122-201033733 metal) is preferably less, but similarly, the residual monomer or oligomer component The amount is preferably from 0 to 10% by mass, more preferably from 〇 to 5% by mass, even more preferably from 〇 to _质量%. By satisfying these conditions, it is possible to obtain no foreign substance or sensitivity and the like in the liquid. A photoresist composition that does not change with aging. In addition, considering the resolution, photoresist profile, sidewall photoresist pattern, coarse sugar content, and the like, the molecular weight distribution (Mw/Mn, also known as polydispersity) is derived from 1 to 3 is preferably 'preferably from 1 to 2, more preferably from 1 to ι·8, and most preferably from 1 to 1-5. Ο As for the resin (C)', a variety of commercially available products can be used. Or the resin can be synthesized by a conventional method (for example, radical polymerization). Examples of the synthesis method generally include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heating the solution, thereby achieving polymerization; and a dropping polymerization method which takes 1 to 10 hours, A solution comprising the monomer species and the starter is added dropwise to the hot solvent. The dropping polymerization method is preferred. Examples of the reaction solvent include ethers such as diisopropyl ether, tetrahydrofuran, 1,4-dioxane; ketones such as methyl ethyl ketone and methyl isobutyl ketone; ester solvents, such as acetic acid Ethyl ester; guanamine solvent such as dimethylformamide and dimethylacetamide; and a solvent which is capable of dissolving the composition of the present invention, such as propylene glycol monomethyl ether acetate (PGME A, also known) It is 1 methoxy-2-ethoxypropane propane), propylene glycol monomethyl ether (PGME, also known as 1-methoxy-2-propanol) and cyclohexanone. It is more preferable to carry out polymerization using the same solvent as that used in the photosensitive ray or the radiation sensitive resin composition of the present invention. By using the same solvent, generation of particles during storage can be suppressed. The polymerization is carried out in an inert gas atmosphere such as nitrogen or argon, preferably from -123 to 201033733. As for the polymerization initiator, the polymerization is started using a commercially available radical initiator (for example, an azo-based initiator, a peroxide). The radical initiator is preferably an azo-based initiator, and an azo-based initiator having an ester group, a cyano group or a carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis(2-methylpropionate). The reaction concentration is usually from 5 to 50% by mass, preferably from 30 to 50% by mass, and the reaction temperature is usually from 10 to 150 ° C, from 30 to 120 ° C, from 60 to 100 ° C. Better. After the reaction was completed, the reaction solution was allowed to cool to room temperature and purified. Purification can be carried out by a normal method, for example, a liquid-liquid extraction method, which employs water washing or a suitable solvent to remove residual monomer or oligomer components; a purification method in a solution state, such as by Extracting only the ultrafiltration method having those having a molecular weight of not more than a specific hydrazine for removal; a reprecipitation method, which adds the resin solution dropwise to a poor solvent to cure the resin in the poor solvent' thus removing residual Monomers and analogs thereof, and purification methods in a solid state, such as a method in which a resin slurry separated by filtration is subjected to washing with a poor solvent. For example, the resin is obtained by allowing the reaction solution to be slightly soluble or insoluble in the resin (poor solvent, the volume of which is 10 times or less of the reaction solution, preferably from 1 to 5 times) It is precipitated and precipitated as a solid. The solvent used in the precipitation or reprecipitation from the polymer solution! ! (precipitating or reprecipitating the solvent), if it is a poor solvent for the polymer, it is sufficient and the solvent which can be used may be, for example, a hydrocarbon, a halogenated hydrocarbon, a nitro compound, an ether, a ketone, an ester, or a carbonate depending on the kind of the polymer. A salt, an alcohol, a carboxylic acid, water-124-201033733, and a mixed solvent containing the solvent are appropriately selected. Among these solvents, a solvent containing at least an alcohol (particularly methanol or the like) or water is preferred as the precipitation or re-sinking solvent. The amount of the precipitation or reprecipitation solvent to be used may be appropriately selected in consideration of efficiency, productivity, and the like, but generally, the amount used is from 100 to 10,000 parts by mass per 100 parts by mass of the polymer solution. It is preferably from 200 to 2,000 parts by mass, more preferably from 300 to 1,000 parts by mass. The temperature at the time of precipitation or reprecipitation® may be appropriately selected in consideration of efficiency or operability, but it is usually at a level of 0 to 50 ° C, adjacent to room temperature (for example, from about 20 to 35 ° C) Preferably. This precipitation or reprecipitation operation can be carried out by a known method such as a batch system and a continuous system using a commonly used mixing vessel such as a stirring tank. The precipitated or reprecipitated polymer is typically subjected to conventionally used solids • liquid separation (such as filtration and centrifugation), followed by drying and use. The solvent-resistant filter element is preferably used, preferably under pressure. Drying is carried out at atmospheric pressure or under reduced pressure (preferably under reduced pressure) at a temperature of from about 30 to 100 ° C (preferably from 3 Torr to 50 ° C). Incidentally, once the resin is precipitated and separated, the resin may be dissolved again in a solvent and then brought into contact with a solvent in which the resin is slightly soluble or insoluble. That is, the method usable herein includes contacting the polymer with a solvent which is slightly soluble or insoluble with the polymer after completion of the radical polymerization reaction to precipitate the resin (step a); from the solution Separating the resin (step b); once again dissolving the resin in a solvent to prepare a resin solution A (step c); bringing the resin solution A to a slightly soluble or insoluble state with the resin -125-201033733 The solvent (having a volume less than 10 times (5 times or less) of the resin solution A) is contacted to precipitate a resin solid (step d); and the precipitated resin is separated (step e). Specific examples of the resin (C) are set forth below, but the invention is not limited thereto. Similarly, the repeating unit in each resin (corresponding to the repeating unit from the left side in the structural formula) The molar ratio, weight average molecular weight (Mw), and polydispersity (Mw/Mn) are shown in the following table. -126- 201033733

-127- 201033733-127- 201033733

-128- 201033733-128- 201033733

-CFg (C-32)-CFg (C-32)

(C-36)(C-36)

-129- 201033733-129- 201033733

-130- 201033733-130- 201033733

ΟΟ

(C-δΟ)(C-δΟ)

131 201033733131 201033733

-132- 201033733-132- 201033733

-133- 201033733-133- 201033733

(C-156)(C-156)

-134 201033733-134 201033733

-135- 201033733-135- 201033733

-136- 201033733-136- 201033733

-137- 201033733-137- 201033733

FaC (C-236)FaC (C-236)

138- 201033733 表1138- 201033733 Table 1

樹脂 組成物 Mw Mw/Mn C-1 100 6000 1.5 C-2 100 7500 1.4 C-3 100 6000 1.4 06 50/50 6500 1.4 C-7 90/10 8000 1.4 C-8 60/40 8000 1.3 C-9 30/30/30/10 9500 1.4 C-10 70/30 7000 1.4 C-11 50/10/40 9000 1.6 C-12 80/20 6000 1.4 C-14 50/50 8000 1.4 C-16 100 6000 1.4 C-17 100 8000 1.4 C-18 40/20/40 6000 1.4 C-21 40/40/10/10 6000 1.4 C-22 100 5500 1.4 C-23 100 9500 1.5 C-24 70/30 8500 1.4 C-25 50/30/20 5000 1.4 C-26 50/20/30 5500 1.4 C-27 50/50 9000 1.5 C-28 50/40/10 9000 1.4 C-30 70/30 6500 1.4 031 70/30 9000 1.5 C-32 90/10 9000 1.5 C-33 70/20/10 7000 1.4 C-34 80/10/10 8500 1.5 C-35 60/30/10 7500 1.4 C-36 50/50 5000 1,5 C-38 50/50 4500 1.4 樹脂 組成物 Mw Mw/Mn C-39 80/20 5000 1.4 C-40 100 5000 1.4 C-43 90/10 8500 1.4 C-44 30/30/30/10 5500 1.4 C-49 60/30/10 6000 1.4 C-50 60/40 8000 1.5 C-51 50/50 9500 1.4 C-53 100 7000 1.5 C-54 70/10/10/10 5500 1.4 C-55 80/20 6500 1.4 C-56 30/30/40 6000 1.4 C-62 100 6500 1.4 C-63 80/10/10 7000 1,5 C-64 90/10 9000 1.5 C-67 100 6500 1.4 C-68 80/20 6500 1.4 C-69 70/20/10 7000 1.4 070 60/30/10 9000 1.5 C-71 60/20/20 8000 1.4 C-72 100 9500 1.5 C-73 40/60 8000 1.4 C-74 60/10/30 7000 1,5 C-75 100 5500 1.5 C-76 90/10 6500 1.4 C-77 90/10 7500 1.3 C-80 70/10/20 8500 1.5 C-81 80/20 5500 1.3 C-88 40/30/30 6000 1.3 C-89 70/30 6500 1.3 C-96 100 6000 1.5 -139- 201033733 表ι(繼續) 樹脂 組成物 Mw Mw/Mn 樹脂 組成物 Mw Mw/Mn C-101 80/20 7000 1.3 C-201 80/20 8000 1.5 C-102 50/20/30 4500 1.3 C-205 80/20 7000 1.4 C-114 80/20 7000 1.5 C-207 80/15/5 10000 1.4 C-115 90/10 6000 1.2 C-208 85/10/5 5000 1.5 C-117 50/50 6000 1.5 C-209 90/8/2 13000 1.5 C-118 100 9500 1.5 C-210 85/10/5 6000 1.5 C-119 50/20/20/10 8000 1.5 C-211 90/8/2 8000 1.4 C-120 75/10/10/5 7000 1.3 C-212 50/50 12000 1.5 C-121 30/30/10/30 5500 1.3 C-213 50/50 8000 1.3 C-131 60/20/20 4000 1.4 C-214 85/15 6500 1.5 0132 50/30/20 6500 1.4 C-215 85/15 4000 1.5 C-133 70/10/20 7000 1.4 C-216 90/10 7500 1.6 C-134 80/10/10 9000 1.4 C-217 90/10 3500 1.5 C-135 60/40 8000 1.5 C-218 95/5 5500 1.4 C-136 30/70 9000 1.4 C-219 85/10/5 5000 1.5 C-143 50/40/10 7000 1.4 C-220 88/10/2 13000 1.4 C-146 50/50 9000 1.5 C-221 90/8/2 12000 1.5 C-147 48/50/2 6000 1.4 0222 90/8/2 11000 1.4 C-148 50/50 9000 1.5 0223 90/8/2 9000 1.5 C-149 50/25/25 6000 1.4 0224 50/50 6000 1.5 C-155 50/50 6000 1.5 C-225 50/50 8000 1.5 C-156 50/50 4000 1.5 C-226 80/20 4500 1.3 C-164 25/50/25 6000 1.5 C-227 85/15 8500 1.6 C-165 40/40/10/10 6500 1.4 C-228 90/10 10000 1.4 0171 100 4500 1.4 C-229 90/10 3500 1.5 C-172 100 3500 1.4 C-230 95/5 4500 1.5 C-173 60/40 5000 1.4 C-231 50/50 4000 1.5 C-174 90/10 6000 1.4 C-232 80/18/2 6000 1.5 C-179 100 6000 1.4 C-233 90/8/2 9500 1.5 C-180 100 7000 1.3 C-234 80/20 6500 1.4 C-191 90/10 5500 1.4 C-235 90/10 8000 1.5 C-192 75/25 9000 1.4 C-236 100 8000 1.5 C-193 70/30 10000 1.5 C-237 95/5 4500 1.5 C-194 70/30 5000 1.4 C-238 90/10 10000 1.5 C-199 100 5000 1.4 C-239 100 6500 1.7 C-200 80/20 6000 1.4 C-240 40/20/20/20 12000 1.8 -140- 201033733 至於該樹脂(C),可單獨使用一種種類或可組合著使用 二或更多種種類。 同樣地,組合著使用具有至少氟原子或矽原子的任一 個且與樹脂(C)不同之樹脂(CP)較佳。 具有至少氟原子或矽原子的任一個之樹脂(CP) 本發明之感光化射線或感放射線樹脂組成物可進一步 包括具有至少氟原子或矽原子的任一個且與樹脂(C)有分 別之樹脂(CP)。藉由包含該樹脂(C)與樹脂(CP),該樹脂(C) 〇 與樹脂(CP)會不均勻地分布至該薄膜表面層,及當該沉浸 媒質爲水時,所形成的薄膜可提高在光阻薄膜表面上對水 之後退接觸角和該沉浸液體的流動性。該薄膜的後退接觸 角從60至90°較佳,70°或更大更佳》該樹脂(CP)可藉由 適當地調整其含量而使用,以提供具有後退接觸角在上述 範圍內的薄膜,但是該含量從0.01至10質量%較佳,從 0.1至5質量%更佳,從0.1至4質量%又更佳,而從0.1 至3質量%又更佳,以該感光化射線或感放射線樹脂組成 Ο w 物的全部固體含量爲準。如上所述,該樹脂(CP)不均勻地 分布至界面,但是不像界面活性劑,其不需要在分子中具 有必需的親水性基團及可不促成極性/非極性物質的均勻 混合。 在該沉浸曝光步驟中,該沉浸液體需要隨著以高速掃 描晶圓及形成曝光圖案的曝光頭之移動而在晶圓上移動。 因此,該沉浸液體與該薄膜在動態狀態下的接觸角重要, 及該光阻需要具有能讓液滴追隨該高速掃描的曝光頭且無 -141- 201033733 殘餘之性能。 由於組合著使用該樹脂(C)與樹脂(CP),在薄膜表面上 的疏水性(水流動性)提高及顯影殘餘物(浮渣)減少。 在具有至少氟原子或矽原子的任一個之(CP)樹脂中的 氟原子或矽原子可存在於樹脂主鏈中或可取代在側鏈上。 該樹脂(CP)爲具有含氟原子的烷基、含氟原子的環烷 基或含氟原子的芳基作爲該含氟原子的部分結構之樹脂較 佳。 該含氟原子的烷基(具有碳數1至10較佳,從1至4 更佳)爲具有至少一個氫原子由氟原子置換之線性或分支 烷基及可進一步具有其它取代基。 該含氟原子的環烷基爲具有至少一個氫原子由氟原子 置換之單環或多環的環烷基及可進一步具有其它取代基。 該含氟原子的芳基爲具有至少一個氫原子由氟原子置 換之芳基(例如,苯基、萘基)及可進一步具有其它取代基。 該含氟原子的烷基、含氟原子的環烷基及含氟原子的 芳基之較佳實施例包括上述關於樹脂(C)所描述之由式(F2) 至(F4)所表示的基團,但是本發明不限於此。 在本發明中,由式(F2)至(F 4)所表示的基團被包含在以 (甲基)丙烯酸酯爲基礎的重覆單元中較佳。 下列提出具有氟原子的重覆單元之特定實施例,但是 本發明不限於此。 在特定的實施例中,Χι代表氫原子、-ch3、-f或-cf3。 X2代表-F或-CF3 » -142- 201033733Resin composition Mw Mw/Mn C-1 100 6000 1.5 C-2 100 7500 1.4 C-3 100 6000 1.4 06 50/50 6500 1.4 C-7 90/10 8000 1.4 C-8 60/40 8000 1.3 C-9 30/30/30/10 9500 1.4 C-10 70/30 7000 1.4 C-11 50/10/40 9000 1.6 C-12 80/20 6000 1.4 C-14 50/50 8000 1.4 C-16 100 6000 1.4 C -17 100 8000 1.4 C-18 40/20/40 6000 1.4 C-21 40/40/10/10 6000 1.4 C-22 100 5500 1.4 C-23 100 9500 1.5 C-24 70/30 8500 1.4 C-25 50/30/20 5000 1.4 C-26 50/20/30 5500 1.4 C-27 50/50 9000 1.5 C-28 50/40/10 9000 1.4 C-30 70/30 6500 1.4 031 70/30 9000 1.5 C -32 90/10 9000 1.5 C-33 70/20/10 7000 1.4 C-34 80/10/10 8500 1.5 C-35 60/30/10 7500 1.4 C-36 50/50 5000 1,5 C-38 50/50 4500 1.4 Resin composition Mw Mw/Mn C-39 80/20 5000 1.4 C-40 100 5000 1.4 C-43 90/10 8500 1.4 C-44 30/30/30/10 5500 1.4 C-49 60 /30/10 6000 1.4 C-50 60/40 8000 1.5 C-51 50/50 9500 1.4 C-53 100 7000 1.5 C-54 70/10/10/10 5500 1.4 C-55 80/20 6500 1.4 C- 56 30/30/40 6000 1.4 C-62 100 6500 1.4 C-63 80/10/10 7000 1,5 C-64 90/10 9000 1.5 C-67 100 6500 1.4 C-68 80/20 6500 1.4 C-69 70/20/10 7000 1.4 070 60/30/10 9000 1.5 C-71 60/20/20 8000 1.4 C-72 100 9500 1.5 C -73 40/60 8000 1.4 C-74 60/10/30 7000 1,5 C-75 100 5500 1.5 C-76 90/10 6500 1.4 C-77 90/10 7500 1.3 C-80 70/10/20 8500 1.5 C-81 80/20 5500 1.3 C-88 40/30/30 6000 1.3 C-89 70/30 6500 1.3 C-96 100 6000 1.5 -139- 201033733 Table 1 (continued) Resin composition Mw Mw/Mn resin Composition Mw Mw/Mn C-101 80/20 7000 1.3 C-201 80/20 8000 1.5 C-102 50/20/30 4500 1.3 C-205 80/20 7000 1.4 C-114 80/20 7000 1.5 C- 207 80/15/5 10000 1.4 C-115 90/10 6000 1.2 C-208 85/10/5 5000 1.5 C-117 50/50 6000 1.5 C-209 90/8/2 13000 1.5 C-118 100 9500 1.5 C-210 85/10/5 6000 1.5 C-119 50/20/20/10 8000 1.5 C-211 90/8/2 8000 1.4 C-120 75/10/10/5 7000 1.3 C-212 50/50 12000 1.5 C-121 30/30/10/30 5500 1.3 C-213 50/50 8000 1.3 C-131 60/20/20 4000 1.4 C-214 85/15 6500 1.5 0132 50/30/20 6500 1.4 C- 215 85/15 4000 1.5 C-133 70/10/20 7000 1.4 C-216 90/10 7500 1.6 C-134 80/10/10 9000 1.4 C-217 90/10 3500 1.5 C-135 60/40 8000 1.5 C-218 95/5 5500 1.4 C-136 30/70 9000 1.4 C-219 85/10/5 5000 1.5 C-143 50/40/10 7000 1.4 C-220 88/10/2 13000 1.4 C-146 50/50 9000 1.5 C-221 90/8/2 12000 1.5 C-147 48/50/2 6000 1.4 0222 90/8/2 11000 1.4 C-148 50/50 9000 1.5 0223 90/8/2 9000 1.5 C-149 50/25/25 6000 1.4 0224 50/50 6000 1.5 C-155 50/50 6000 1.5 C- 225 50/50 8000 1.5 C-156 50/50 4000 1.5 C-226 80/20 4500 1.3 C-164 25/50/25 6000 1.5 C-227 85/15 8500 1.6 C-165 40/40/10/10 6500 1.4 C-228 90/10 10000 1.4 0171 100 4500 1.4 C-229 90/10 3500 1.5 C-172 100 3500 1.4 C-230 95/5 4500 1.5 C-173 60/40 5000 1.4 C-231 50/50 4000 1.5 C-174 90/10 6000 1.4 C-232 80/18/2 6000 1.5 C-179 100 6000 1.4 C-233 90/8/2 9500 1.5 C-180 100 7000 1.3 C-234 80/20 6500 1.4 C-191 90/10 5500 1.4 C-235 90/10 8000 1.5 C-192 75/25 9000 1.4 C-236 100 8000 1.5 C-193 70/30 10000 1.5 C-237 95/5 4500 1.5 C-194 70 /30 5000 1.4 C-238 90/10 10000 1.5 C-199 100 500 0 1.4 C-239 100 6500 1.7 C-200 80/20 6000 1.4 C-240 40/20/20/20 12000 1.8 -140- 201033733 As for the resin (C), one type may be used alone or in combination. More or more types. Similarly, it is preferred to use a resin (CP) having at least one of fluorine atoms or germanium atoms and different from the resin (C). Resin (CP) having at least one of a fluorine atom or a ruthenium atom The photosensitive ray or radiation sensitive resin composition of the present invention may further comprise a resin having at least one of fluorine atoms or ruthenium atoms and having a difference from the resin (C) (CP). By including the resin (C) and the resin (CP), the resin (C) and the resin (CP) are unevenly distributed to the surface layer of the film, and when the immersion medium is water, the formed film can be The water receding contact angle and the fluidity of the immersion liquid on the surface of the photoresist film are increased. The receding contact angle of the film is preferably from 60 to 90°, more preferably 70° or more. The resin (CP) can be used by appropriately adjusting the content thereof to provide a film having a receding contact angle within the above range. However, the content is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 5% by mass, still more preferably from 0.1 to 4% by mass, and more preferably from 0.1 to 3% by mass, with the sensitized ray or sensation The total solid content of the radioactive resin composition is the standard. As described above, the resin (CP) is unevenly distributed to the interface, but unlike the surfactant, it does not need to have a necessary hydrophilic group in the molecule and may not contribute to uniform mixing of the polar/nonpolar substance. In the immersion exposure step, the immersion liquid needs to move on the wafer as the exposure head scans the wafer at high speed and forms an exposure pattern. Therefore, the contact angle of the immersion liquid with the film in a dynamic state is important, and the photoresist needs to have an exposure head capable of following the high-speed scanning of the liquid droplets without the residual performance of -141-201033733. Due to the combination of the resin (C) and the resin (CP), the hydrophobicity (water fluidity) on the surface of the film is improved and the development residue (scum) is reduced. The fluorine atom or the ruthenium atom in the (CP) resin having at least one of fluorine atoms or ruthenium atoms may be present in the resin main chain or may be substituted on the side chain. The resin (CP) is preferably a resin having a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl group or a fluorine atom-containing aryl group as a partial structure of the fluorine atom. The fluorine atom-containing alkyl group (having preferably having a carbon number of 1 to 10, more preferably 1 to 4) is a linear or branched alkyl group having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. The fluorine atom-containing cycloalkyl group is a monocyclic or polycyclic cycloalkyl group having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. The fluorine atom-containing aryl group is an aryl group (e.g., phenyl group, naphthyl group) having at least one hydrogen atom replaced by a fluorine atom and may further have other substituents. Preferred examples of the fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group include the groups represented by the above formulas (F2) to (F4) for the resin (C). Group, but the invention is not limited thereto. In the present invention, the groups represented by the formulae (F2) to (F 4) are preferably contained in the (meth) acrylate-based repeating unit. The specific embodiment of the repetitive unit having a fluorine atom is proposed below, but the invention is not limited thereto. In a particular embodiment, Χι represents a hydrogen atom, -ch3, -f or -cf3. X2 stands for -F or -CF3 » -142- 201033733

-143- 201033733-143- 201033733

該樹脂(CP)爲具有烷基矽烷基結構(三烷基矽烷基較 佳)或環狀矽氧烷結構作爲該含矽原子的部分結構之樹脂 較佳。 該烷基矽烷基結構及環狀矽氧烷結構的特定實施例包 括上述關於樹脂(C)所描述之由式(CS-1)至(CS-3)所表示的 基團。 再者,該樹脂(CP)可包含至少一個選自於由下列(X)至 (z)所組成之群的基團: (X)可溶於鹼的基團、(y)能藉由鹼性顯影劑之作用分解 以增加在鹼性顯影劑中的溶解度之基團、及(z)~能藉由酸 作用分解的基團。 這些基團的特定實施例與上述關於樹脂(c)所描述之 -144- 201033733 那些相同。 該具有能增加在鹼性顯影劑中的溶解度之基團(y)的 重覆單元之含量從1至50莫耳%較佳,從3至35莫耳%更 佳’從5至20莫耳%又更佳’以在該樹脂(cp)中的全部重 覆單元爲準。 該具有能增加在鹼性顯影劑中的溶解度之基團的 重覆單元之特定實施例與具有對該組分(A)的樹脂所描述 之內酯結構的那些重覆單元相同。 包含在該樹脂(CP)中、具有能藉由酸作用分解的基團 (z)之重覆單元的實施例與對該組分(A)的樹脂所描述之那 些具有可酸分解的基團之重覆單元相同。在該樹脂(CP) 中’該具有能藉由酸作用分解的基團(z)之重覆單元的含量 從1至80莫耳。/。較佳,從1 0至80莫耳%更佳,從20至60 莫耳%又更佳,以在該樹脂(CP)中的全部重覆單元爲準。 該樹脂(CP)可進一步具有由上述關於樹脂(C)所描述 _ @式(III)所表示之重覆單元。 在該樹脂(CP)包含氟原子的實例中,其氟原子含量從5 至80質量%較佳,從1〇至80質量%更佳,以該樹脂(CP) 的分子量爲準。同樣地,該含氟原子重覆單元佔有從10至 Wo質量%較佳,從30至100質量%更佳,以在該樹脂(CP) 中的全部重覆單元爲準。 在該樹脂(CP)包含矽原子的實例中,該矽原子含量從2 至50質量%較佳,從2至30質量%更佳,以該樹脂(CP)的 分子量爲準。同樣地,該含矽原子的重覆單元佔有從10至 -145- 201033733 100質量%較佳,從20至100質量%更佳,以在該樹脂(CP) 中的全部重覆單元爲準。 該樹脂(CP)的標準聚苯乙烯當量平均分子量從1,000 至 100,000 較佳,從 1,000 至 50,000 更佳,從 2,000 至 15,000 又更佳。 類似於該組分(A)的樹脂,在該樹脂(CP)中,雜質(諸 如金屬)量少當然較佳,但是同樣地,該殘餘的單體或寡聚 物組分之含量從0至10質量%較佳,從〇至5質量%更佳, 從0至1質量%又更佳。藉由滿足這些條件,可獲得在液 體中無外來物質或靈敏度及其類似性質不隨著時效改變之 感光化射線或感放射線樹脂組成物。再者,考慮到解析度、 光阻外形、光阻圖案的側壁、粗糙度及其類似性質,分子 量分布(Mw/Mn,亦稱爲多分散性)從1至3較佳,從1至2 更佳,從1至1.8又更佳及從1至1.5最佳。 至於該樹脂(CP),可使用多種可商業購得的產物,或 該樹脂可藉由普通方法(例如,自由基聚合))合成。特別是, 該樹脂可以與樹脂(C)相同的方式合成。 下列提出該具有至少氟原子或矽原子的任一個之樹脂 (CP)的特定實施例。 -146- 201033733The resin (CP) is preferably a resin having a structure of an alkyl fluorenyl group (preferably a trialkyl decyl group) or a cyclic siloxane structure as a partial structure of the ruthenium atom. Specific examples of the alkyl fluorenyl structure and the cyclic siloxane structure include the groups represented by the above formula (CS-1) to (CS-3) described for the resin (C). Further, the resin (CP) may comprise at least one group selected from the group consisting of (X) a group soluble in a base, (y) capable of being a base The group of the developer is decomposed to increase the solubility in the alkaline developer, and (z) is a group which can be decomposed by the action of an acid. Specific examples of these groups are the same as those described above for the resin (c) -144-201033733. The content of the repeating unit having a group (y) capable of increasing the solubility in the alkaline developer is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, and from 5 to 20 mol. % is even better 'based on all repeating units in the resin (cp). The specific embodiment of the repeating unit having a group capable of increasing the solubility in the alkaline developer is the same as those having the lactone structure described for the resin of the component (A). Examples of the recoating unit contained in the resin (CP) having a group (z) capable of decomposing by an acid action and those having an acid-decomposable group described in the resin of the component (A) The repeating unit is the same. The content of the repeating unit in the resin (CP) which has a group (z) which can be decomposed by an acid action is from 1 to 80 mol. /. Preferably, it is preferably from 10 to 80 mol%, more preferably from 20 to 60 mol%, and all of the repeating units in the resin (CP) are used. The resin (CP) may further have a repeating unit represented by the above-mentioned formula (III) regarding the resin (C). In the example in which the resin (CP) contains a fluorine atom, the fluorine atom content thereof is preferably from 5 to 80% by mass, more preferably from 1 Å to 80% by mass, based on the molecular weight of the resin (CP). Similarly, the fluorine atom-containing repeating unit preferably occupies from 10 to Wo% by mass, more preferably from 30 to 100% by mass, based on all of the repeating units in the resin (CP). In the example in which the resin (CP) contains a halogen atom, the content of the germanium atom is preferably from 2 to 50% by mass, more preferably from 2 to 30% by mass, based on the molecular weight of the resin (CP). Similarly, the ruthenium-containing repeating unit occupies from 10 to -145 to 201033733, preferably 100% by mass, more preferably from 20 to 100% by mass, based on all of the repeating units in the resin (CP). The resin (CP) has a standard polystyrene equivalent average molecular weight of preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, even more preferably from 2,000 to 15,000. Similar to the resin of the component (A), in the resin (CP), a small amount of impurities such as a metal is of course preferable, but similarly, the content of the residual monomer or oligomer component is from 0 to 10% by mass is more preferable, more preferably from 〇 to 5% by mass, still more preferably from 0 to 1% by mass. By satisfying these conditions, a sensitized ray or a radiation sensitive resin composition in which no foreign matter or sensitivity and the like in the liquid do not change with aging can be obtained. Furthermore, considering the resolution, the photoresist profile, the sidewall of the photoresist pattern, the roughness, and the like, the molecular weight distribution (Mw/Mn, also referred to as polydispersity) is preferably from 1 to 3, from 1 to 2. More preferably, from 1 to 1.8 is better and from 1 to 1.5 is the best. As the resin (CP), a variety of commercially available products can be used, or the resin can be synthesized by a usual method (e.g., radical polymerization). In particular, the resin can be synthesized in the same manner as the resin (C). A specific embodiment of the resin (CP) having at least one of a fluorine atom or a ruthenium atom is proposed below. -146- 201033733

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[4]溶劑 可在藉由溶解上述描述的組分來製備該感光化射線或 感放射線樹脂組成物那時所使用之溶劑的實施例包括有機 溶劑,諸如羧酸伸烷基二醇單烷基醚酯、伸烷基二醇單烷 基醚、乳酸烷酯、烷氧基丙酸烷酯、環狀內酯(具有碳數4 至10較佳)、可包括環的單酮化合物(具有碳數4至10較 佳)、碳酸烷二酯、烷氧基醋酸烷酯及丙酮酸烷酯。 -151- 201033733 該羧酸伸烷基二醇單烷基醚酯的較佳實施例包括 丙二醇單甲基醚酯(PGMEA,亦已知爲1-甲氧基-2-乙 基丙烷)、醋酸丙二醇單乙基醚酯、醋酸丙二醇單丙 酯、醋酸丙二醇單丁基醚酯、丙酸丙二醇單甲基醚酯 酸丙二醇單乙基醚酯、醋酸乙二醇單甲基醚酯及醋酸 醇單乙基醚酯。 該伸烷基二醇單烷基醚的較佳實施例包括丙二醇 基醚(PGME,亦已知爲1-甲氧基-2-丙醇)、丙二醇單 醚、丙二醇單丙基醚、丙二醇單丁基醚、乙二醇單甲 及乙二醇單乙基醚。 該乳酸烷酯的較佳實施例包括乳酸甲酯、乳酸乙 乳酸丙酯及乳酸丁酯。 該烷氧基丙酸烷酯的較佳實施例包括3 -乙氧基丙 酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸甲酯及3-甲氧 酸乙酯。 該環狀內酯的較佳實施例包括丙內酯、冷_ 酯、r-丁內酯、α -甲基-r-丁內酯、/3 -甲基-r-丁户 7-戊內酯、7-己內酯、7-辛內醋及0:_徑基_7_丁内 該可包含環的單酮化合物之較佳實施例包括2_ 丁 3 -甲基丁酮、三級丁基乙酮、2-戊酮、3-戊酮、3 -甲 戊酮' 4-甲基-2-戊酮、2-甲基-3-戊酮、4,4-二甲基- 2-J: 2,4-二甲基-3-戊酮、2,2,4,4-四甲基-3-戊酮、2-己|1 己酮、5·甲基-3-己酮、2-庚酮、3-庚酮、4-庚酮、2-甲 庚酮、5-甲基-3-庚酮、2,6-二甲基-4-庚酮、2-辛酮、 醋酸 醯氧 基醚 、丙 乙二 單甲 乙基 基醚 酯、 酸乙 基丙 丁內 3酯、 丨酯。 酮、 基-2-ξ酮、 ί、3-基-3-3-辛 -152- 201033733 酮、2-壬酮、3-壬酮、5-壬酮、2-癸酮、3-癸酮、4-癸酮、 5-己烯-2-酮、3-戊烯-2-酮、環戊酮、2-甲基環戊酮、3-甲 基環戊酮、2,2-二甲基環戊酮、2,4,4-三甲基環戊酮、環己 酮、3-甲基環己酮、4-甲基環己酮、4-乙基環己酮、2,2-二 甲基環己酮、2,6-二甲基環己酮、2,2,6-三甲基環己酮、環 庚酮、2-甲基環庚酮及3-甲基環庚酮。 該碳酸烷二酯的較佳實施例包括碳酸丙二酯、碳酸亞 乙烯酯、碳酸乙二酯及碳酸丁二酯。 ❹ 該烷氧基醋酸烷酯的較佳實施例包括醋酸2-甲氧基乙 酯、醋酸2-乙氧基乙酯、醋酸2-(2-乙氧基乙氧基)乙酯、 醋酸3-甲氧基-3-甲基丁酯及醋酸1-甲氧基-2-丙酯。 該丙酮酸烷酯的較佳實施例包括丙酮酸甲酯、丙酮酸 乙酯及丙酮酸丙酯。 可較佳使用的溶劑爲在普通溫度下、在大氣壓下具有 沸點130 °C或更高之溶劑,及其特定實施例包括環戊酮、 7 •丁內酯、環己酮、乳酸乙酯、醋酸乙二醇單乙基醚酯、 © 醋酸丙二醇單甲基醚酯、3·乙氧基丙酸乙酯、丙酮酸乙酯、 醋酸2-乙氧基乙酯、醋酸2-(2-乙氧基乙氧基)乙酯及碳酸 丙二酯。 在本發明中,可單獨使用這些溶劑之一或可組合著使 用其二或更多種種類。 在本發明中,可使用藉由混合在結構中包含羥基的溶 劑與不包含羥基的溶劑所製備之混合溶劑作爲該有機溶 劑。 -153- 201033733 該包含羥基的溶劑之實施例包括乙二醇、乙二醇單甲 基醚、乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二 醇單乙基醚及乳酸乙酯。在這些當中,丙二醇單甲基醚及 乳酸乙醋較佳。 該不包含羥基的溶劑之實施例包括醋酸丙二醇單甲基 醚酯、乙氧基丙酸乙酯、2-庚酮、r-丁內酯、環己酮、.醋 酸丁酯、N-甲基吡咯烷酮、N,N-二甲基乙醯胺及二甲基亞 碾。在這些當中,醋酸丙二醇單甲基醚酯、乙氧基丙酸乙 酯、2-庚酮、7-丁內酯、環己酮及醋酸丁酯較佳’及醋酸 丙二醇單甲基醚酯、乙氧基丙酸乙酯及2-庚酮最佳。 該包含羥基的溶劑對不包含羥基的溶劑之混合比率 (以質量計)通常從1/99至99/1,從10/90至90/10較佳, 從20/8 0至60/40更佳。考慮到塗層均勻性,該混合溶劑 所包含之不包含羥基的溶劑之比率爲50質量%或更大特別 佳。 該溶劑爲二或更多種包含醋酸丙二醇單甲基醚酯 (PGMEA)之溶劑的混合溶劑較佳。 [5]鹼性化合物 本發明之感光化射線或感放射線樹脂組成物包含一鹼 性化合物較佳,用以減少性能隨著從曝光直到加熱的時效 而改變。 該鹼性化合物爲具有由下列式(A)至(E)所表示的結構 之化合物較佳: -154- 201033733[4] Solvents Examples of a solvent which can be used at the time of preparing the sensitized ray or radiation-sensitive resin composition by dissolving the components described above include an organic solvent such as a carboxylic acid alkylene glycol monoalkyl group. Ether ester, alkylene glycol monoalkyl ether, alkyl lactate, alkyl alkoxypropionate, cyclic lactone (preferably having a carbon number of 4 to 10), a monoketone compound which may include a ring (having carbon) Preferably, the number is from 4 to 10, the alkylene carbonate, the alkyl alkoxyacetate and the alkyl pyruvate. -151- 201033733 The preferred embodiment of the carboxylic acid alkylene glycol monoalkyl ether ester comprises propylene glycol monomethyl ether ester (PGMEA, also known as 1-methoxy-2-ethylpropane), acetic acid Propylene glycol monoethyl ether ester, propylene glycol monopropyl acetate, propylene glycol monobutyl ether acetate, propionic acid propylene glycol monomethyl ether propylene glycol monoethyl ether ester, ethylene glycol monomethyl ether ester and acetic acid alcohol Ethyl ether ester. Preferred examples of the alkylene glycol monoalkyl ether include propylene glycol ether (PGME, also known as 1-methoxy-2-propanol), propylene glycol monoether, propylene glycol monopropyl ether, propylene glycol single Butyl ether, ethylene glycol monomethyl and ethylene glycol monoethyl ether. Preferred examples of the lactate alkyl ester include methyl lactate, propyl lactate and butyl lactate. Preferred examples of the alkoxypropionic acid alkyl ester include 3-ethoxypropyl ester, methyl 3-methoxypropionate, methyl 3-ethoxypropionate and ethyl 3-methoxyacetate. Preferred examples of the cyclic lactone include propiolactone, cold-ester, r-butyrolactone, α-methyl-r-butyrolactone, /3-methyl-r-butan 7-pentane Preferred examples of the monoketone compound which may contain a ring include esters, 7-caprolactone, 7-octyl vinegar and 0:_diabase _7-butyl include 2-but-3-methylbutanone, tertiary butyl Ethyl ethyl ketone, 2-pentanone, 3-pentanone, 3-methylpentanone ' 4-methyl-2-pentanone, 2-methyl-3-pentanone, 4,4-dimethyl-2- J: 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexyl-1 hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methylheptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4-heptanone, 2-octanone, acetic acid Oxyl ether, propylenediethyl monoethyl ether ester, acid ethyl propane 3 ester, decyl ester. Ketone, ketone-2-ketone, ί, 3-yl-3-3-octyl-152-201033733 ketone, 2-nonanone, 3-fluorenone, 5-fluorenone, 2-nonanone, 3-fluorenone , 4-fluorenone, 5-hexen-2-one, 3-penten-2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethyl Cyclopentanone, 2,4,4-trimethylcyclopentanone, cyclohexanone, 3-methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2- Dimethylcyclohexanone, 2,6-dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone, and 3-methylcycloheptanone . Preferred examples of the alkylene carbonate include propylene carbonate, vinyl carbonate, ethylene carbonate, and butylene carbonate.较佳 Preferred examples of the alkyl alkoxyacetate include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2-(2-ethoxyethoxy)ethyl acetate, and acetic acid 3 -Methoxy-3-methylbutyl ester and 1-methoxy-2-propyl acetate. Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate and propyl pyruvate. The solvent which can be preferably used is a solvent having a boiling point of 130 ° C or higher at normal temperature and at atmospheric pressure, and specific examples thereof include cyclopentanone, 7 • butyrolactone, cyclohexanone, ethyl lactate, Ethylene glycol monoethyl ether acetate, © propylene glycol monomethyl ether acetate, ethyl ethoxy propionate, ethyl pyruvate, 2-ethoxyethyl acetate, 2-(2-ethyl acetate) Oxyethoxyethyl)ethyl ester and propylene carbonate. In the present invention, one of these solvents may be used alone or two or more kinds thereof may be used in combination. In the present invention, a mixed solvent prepared by mixing a solvent containing a hydroxyl group in the structure and a solvent containing no hydroxyl group can be used as the organic solvent. -153- 201033733 Examples of the solvent containing a hydroxyl group include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and ethyl lactate . Among these, propylene glycol monomethyl ether and lactic acid ethyl acetate are preferred. Examples of the solvent containing no hydroxyl group include propylene glycol monomethyl ether acetate, ethyl ethoxy propionate, 2-heptanone, r-butyrolactone, cyclohexanone, butyl acetate, N-methyl Pyrrolidone, N,N-dimethylacetamide and dimethyl submilling. Among these, propylene glycol monomethyl ether acetate, ethyl ethoxy propionate, 2-heptanone, 7-butyrolactone, cyclohexanone and butyl acetate are preferred 'and propylene glycol monomethyl ether acetate, Ethyl ethoxypropionate and 2-heptanone are most preferred. The mixing ratio of the solvent containing a hydroxyl group to a solvent containing no hydroxyl group (by mass) is usually from 1/99 to 99/1, preferably from 10/90 to 90/10, and from 20/80 to 60/40. good. In view of uniformity of the coating layer, the ratio of the solvent containing no hydroxyl group contained in the mixed solvent is particularly preferably 50% by mass or more. The solvent is preferably a mixed solvent of two or more solvents comprising propylene glycol monomethyl ether acetate (PGMEA). [5] Basic compound The photosensitive ray or radiation sensitive resin composition of the present invention preferably contains a basic compound for reducing the change in performance with aging from exposure to heating. The basic compound is preferably a compound having a structure represented by the following formulas (A) to (E): -154- 201033733

(A)(A)

=4-n4—i_l_ (C> (〇) (E) 在式(A)及(E)中,R2QG、R201及R2G2各者可相同或不 同’其代表氫原子、烷基(具有碳數1至20較佳)、環烷基 (具有碳數3至20較佳)或芳基(具有碳數6至20);及R2 〇1 與r2<)2可結合在一起以形成環》 R2〇3、r2Q4、r2〇5及r2Q6各者可相同或不同,其代表 〇 具有碳數1至20的烷基。 至於該烷基,該具有取代基的烷基爲具有碳數1至20 的胺烷基、具有碳數1至20的羥烷基或具有碳數1至20 的氰烷基較佳。 在式(A)及(E)中的烷基未經取代更佳。 該化合物的較佳實施例包括胍、胺基吡咯烷、吡唑、 吡唑啉、嚒畊、胺基嗎福啉、胺基烷基嗎福啉及哌啶。該 化合物的更佳實施例包括具有咪唑結構、二吖雙環結構、 〇 w 氫氧化鎗結構、羧酸鑰結構、三烷基胺結構、苯胺結構或 吡啶結構之化合物;具有羥基及/或醚鍵的烷基胺衍生物; 及具有羥基及/或醚鍵的苯胺衍生物。 該具有咪唑結構的化合物之實施例包括咪唑、2,4,5-三苯基咪唑、苯并咪唑及2-苯基苯并咪唑。該具有二吖雙 環結構的化合物之實施例包括1,4-二吖雙環[2,2,2]辛烷、 1,5-二吖雙環[4,3,0]壬-5-烯及1,8-二吖雙環[5,4,0]十一-7-=4-n4—i_l_ (C> (〇) (E) In the formulae (A) and (E), each of R2QG, R201 and R2G2 may be the same or different 'it represents a hydrogen atom, an alkyl group (having a carbon number of 1) Preferred to 20), a cycloalkyl group (having preferably a carbon number of 3 to 20) or an aryl group (having a carbon number of 6 to 20); and R2 〇1 and r2<)2 may be bonded together to form a ring" R2〇 3. Each of r2Q4, r2〇5 and r2Q6 may be the same or different and represents an alkyl group having a carbon number of 1 to 20. As the alkyl group, the alkyl group having a substituent is preferably an amine alkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms or a cyanoalkyl group having 1 to 20 carbon atoms. The alkyl group in the formulae (A) and (E) is preferably unsubstituted. Preferred examples of the compound include anthracene, aminopyrrolidine, pyrazole, pyrazoline, hydrazine, aminomorphine, aminoalkylmorpholine and piperidine. More preferred embodiments of the compound include compounds having an imidazole structure, a dioxonium bicyclic structure, a hydrazone hydroxide structure, a carboxylate structure, a trialkylamine structure, an aniline structure or a pyridine structure; having a hydroxyl group and/or an ether bond An alkylamine derivative; and an aniline derivative having a hydroxyl group and/or an ether bond. Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. Examples of the compound having a diterpene bicyclic structure include 1,4-dioxabicyclo[2,2,2]octane, 1,5-dioxabicyclo[4,3,0]non-5-ene and 1 , 8-terpene double ring [5,4,0] eleven-7-

烯。該具有氫氧化鑷結構的化合物之實施例包括氫氧化H -155- 201033733 丁基銨、氫氧化三芳基锍、氫氧化苯醯甲锍及具有2-側氧 烷基的氫氧化锍,特別是,氫氧化三苯基锍、氫氧化三(三 級丁基苯基)锍、氫氧化雙(三級丁基苯基)碘、氫氧化苯甲 醯甲基噻吩鎗及氫氧化2-側氧丙基噻吩鍮。該具有羧酸鎗 結構的化合物之實施例包括該具有氫氧化鑰結構的化合物 之陰離子部分變成羧酸鹽的化合物,諸如醋酸鹽、金剛烷 •1·羧酸鹽及羧酸全氟烷酯。該具有三烷基胺結構的化合物 之實施例包括三(正丁基)胺及三(正辛基)胺。該苯胺化合物 的實施例包括2,6-二異丙基苯胺、N,N-二甲基苯胺、N,N-二丁基苯胺及N,N-二己基苯胺。該具有羥基及/或醚鍵的烷 基胺衍生物之實施例包括乙醇胺、二乙醇胺、三乙醇胺、 N·苯基二乙醇胺及三(甲氧基乙氧基乙基)胺。該具有羥基 及/或醚鍵的苯胺衍生物之實施例包括Ν,Ν-雙(羥乙基)苯 胺。 其它較佳的鹼性化合物.包括含苯氧基的胺化合物、含 苯氧基的銨鹽化合物、含磺酸酯基團的胺化合物及含磺酸 酯基團的銨鹽化合物。 至於該胺化合物,可使用一級、二級或三級胺化合物, 及至少一個烷基鍵結至氮原子的胺化合物較佳。該胺化合 物爲三級胺化合物更佳。在該胺化合物中,只要至少一個 烷基(具有碳數1至20較佳)鍵結至氮原子,除了烷基外, 環烷基(具有碳數3至20較佳)或芳基(具有碳數6至12較 佳)可鍵結至氮原子。該胺化合物在烷基鏈中具有氧原子以 形成氧伸烷基較佳。在分子內的氧伸烷基數目爲1或更 -156- 201033733 多,從3至9較佳,從4至6更佳。在氧伸烷基當中,氧 伸乙基(-CH2CH20-)及氧伸丙基(-CH(CH3)CH2〇-或 -CH2CH2CH20-)較佳,及氧伸乙基更佳。 至於該銨鹽化合物,可使用一級、二級、三級或四級 銨鹽化合物,及至少一個烷基鍵結至氮原子的銨鹽化合物 較佳。在該銨鹽化合物中,只要至少一個烷基(具有碳數1 至20較佳)鍵結至氮原子,除了烷基外,環烷基(具有碳數 3至20較佳)或芳基(具有碳數6至12較佳)可鍵結至氮原 〇 子。該銨鹽化合物在烷基鏈中具有氧原子以形成氧伸烷基 較佳。在分子內的氧伸烷基數目爲1或更多,從3至9較 佳,從4至6更佳。在氧伸烷基當中,氧伸乙基(_CH2CH20-) 及氧伸丙基(-CH(CH3)CH20-或-CH2CH2CH20-)較佳,及氧 伸乙基更佳。 該銨鹽化合物的陰離子之實施例包括鹵素原子、磺酸 鹽、硼酸鹽及磷酸鹽,且鹵素原子及磺酸鹽較佳。該鹵素 原子爲氯、漠或碘較佳;及該磺酸鹽爲具有碳數丨至2〇的 ^ 有機礎酸鹽較佳。該有機磺酸鹽包括具有碳數1至20的烷 基磺酸鹽及芳基磺酸鹽。該烷基磺酸鹽的烷基可具有取代 基’及該取代基的實施例包括氟、氯、溴、烷氧基、醯基 及芳基。該院基磺酸鹽的特定實施例包括甲磺酸鹽、乙磺 酸鹽、丁擴酸鹽、己磺酸鹽、辛磺酸鹽、苄基磺酸鹽、三 m甲磺酸鹽、五氟乙磺酸鹽及九氟丁磺酸鹽。該芳基磺酸 鹽的芳基包括苯環、萘環及蒽環。該苯環、萘環及蒽環可 具有取代基’及該取代基爲具有碳數1至6的線性或分支 -157- 201033733 烷基,或具有碳數3至6的環烷基較佳。該線性或分支烷 基及環烷基的特定實施例包括甲基、乙基、正丙基、異丙 基、正丁基、異丁基、三級丁基、正己基及環己基。該取 代基的其它實施例包括具有碳數1至6的烷氧基、鹵素原 子、氰基、硝基、醯基及醯氧基。 該含苯氧基的胺化合物及含苯氧基的銨鹽化合物爲該 胺化合物或銨鹽化合物的烷基在與氮原子相對的終端處具 有苯氧基之化合物。該苯氧基可具有取代基。該苯氧基的 取代基之實施例包括烷基、烷氧基、鹵素原子、氰基、硝 基、羧基、羧酸酯基團、磺酸酯基團、芳基、芳烷基、醯 氧基及芳氧基。該取代基的取代位置可爲2至6位之任何 位置,及該取代基數目可爲在範圍從1至5內的任何一個。 該化合物在苯氧基與氮原子間具有至少一個氧伸烷基 較佳。在分子內的氧伸烷基數目爲1或更多,且從3至9 較佳’從4至6更佳。在氧伸烷基當中,氧伸乙基(-CH2CH2〇-及氧伸丙基(-ch(ch3)ch2o-或-ch2ch2ch2o-)較佳,且氧 伸乙基更佳。 在該含磺酸酯基團的胺化合物及含磺酸酯基團的銨鹽 化合物中之磺酸酯基團可爲烷基磺酸酯、環烷基磺酸酯及 芳基磺酸酯之任何一種。在烷基磺酸酯的實例中,該烷基 具有碳數1至20較佳;在環烷基磺酸酯的實例中,該環烷 基具有碳數3至20較佳;及在芳基磺酸酯的實例中,該芳 基具有碳數6至12較佳。該烷基磺酸酯、環烷基磺酸酯及 芳基磺酸酯可具有取代基,及該取代基爲鹵素原子、氰基、 -158- 201033733 硝基、羧基、羧酸酯基團或磺酸酯基團較佳。 該化合物在磺酸酯基團與氮原子間具有至少一個氧伸 烷基較佳。在分子內的氧伸烷基數目爲1或更多,且從3 至9較佳,從4至6更佳。在氧伸烷基當中,氧伸乙基 (-CH2CH20-)及氧伸丙基(-CH(CH3)CH20-或-CH2CH2CH2〇-) 較佳,且氧伸乙基更佳。 下列化合物作爲該鹼性化合物亦較佳。Alkene. Examples of the compound having a ruthenium hydroxide structure include H-155-201033733 butylammonium hydroxide, triarylsulfonium hydroxide, benzoquinone hydroxide and cesium hydroxide having a 2-sided oxyalkyl group, particularly , triphenylsulfonium hydroxide, tris(tert-butylphenyl)phosphonium hydroxide, bis(tributylphenyl)iodine hydroxide, benzamidine methylthiophene gun and 2-oxo hydroxide Propylthiophene. Examples of the compound having a carboxylic acid gun structure include a compound in which the anion portion of the compound having a KOH structure becomes a carboxylate such as acetate, adamantane-1 carboxylate, and perfluoroalkyl carboxylate. Examples of the compound having a trialkylamine structure include tri(n-butyl)amine and tris(n-octyl)amine. Examples of the aniline compound include 2,6-diisopropylaniline, N,N-dimethylaniline, N,N-dibutylaniline and N,N-dihexylaniline. Examples of the alkylamine derivative having a hydroxyl group and/or an ether bond include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, and tris(methoxyethoxyethyl)amine. Examples of the aniline derivative having a hydroxyl group and/or an ether bond include ruthenium, osmium-bis(hydroxyethyl)aniline. Other preferred basic compounds include phenoxy-containing amine compounds, phenoxy-containing ammonium salt compounds, sulfonate group-containing amine compounds, and sulfonate group-containing ammonium salt compounds. As the amine compound, a primary, secondary or tertiary amine compound, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom can be preferably used. The amine compound is more preferably a tertiary amine compound. In the amine compound, as long as at least one alkyl group (having preferably 1 to 20 carbon atoms) is bonded to a nitrogen atom, a cycloalkyl group (having preferably a carbon number of 3 to 20 or an aryl group) in addition to an alkyl group (having Preferably, the carbon number of 6 to 12 is bonded to the nitrogen atom. The amine compound preferably has an oxygen atom in the alkyl chain to form an oxygen alkyl group. The number of oxygen alkyl groups in the molecule is 1 or more -156 to 201033733, more preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an oxygen-extended ethyl group (-CH2CH20-) and an oxygen-extended propyl group (-CH(CH3)CH2〇- or -CH2CH2CH20-) are preferred, and an oxygen-extended ethyl group is more preferred. As the ammonium salt compound, a primary, secondary, tertiary or quaternary ammonium salt compound, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom can be preferably used. In the ammonium salt compound, as long as at least one alkyl group (having preferably 1 to 20 carbon atoms) is bonded to a nitrogen atom, a cycloalkyl group (having preferably 3 to 20 carbon atoms) or an aryl group (except for an alkyl group) It has a carbon number of 6 to 12, preferably bonded to the nitrogen proton. The ammonium salt compound preferably has an oxygen atom in the alkyl chain to form an oxygen alkyl group. The number of oxygen alkyl groups in the molecule is 1 or more, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an oxygen-extended ethyl group (_CH2CH20-) and an oxygen-extension propyl group (-CH(CH3)CH20- or -CH2CH2CH20-) are preferred, and an oxygen-extended ethyl group is more preferred. Examples of the anion of the ammonium salt compound include a halogen atom, a sulfonate, a borate and a phosphate, and a halogen atom and a sulfonate are preferred. The halogen atom is preferably chlorine, desert or iodine; and the sulfonate is preferably an organic acid salt having a carbon number of 丨 to 2 〇. The organic sulfonate includes an alkylsulfonate having from 1 to 20 carbon atoms and an arylsulfonate. The alkyl group of the alkyl sulfonate may have a substituent ' and examples of the substituent include fluorine, chlorine, bromine, alkoxy, decyl and aryl. Specific examples of the hospital base sulfonate include methanesulfonate, ethanesulfonate, butyrate, hexanoate, octanesulfonate, benzyl sulfonate, tri-methanesulfonate, five Fluoroethanesulfonate and nonafluorobutanesulfonate. The aryl group of the arylsulfonate includes a benzene ring, a naphthalene ring and an anthracene ring. The benzene ring, naphthalene ring and anthracene ring may have a substituent ' and the substituent is a linear or branched -157-201033733 alkyl group having a carbon number of 1 to 6, or a cycloalkyl group having a carbon number of 3 to 6 is preferred. Specific examples of such linear or branched alkyl and cycloalkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-hexyl and cyclohexyl. Other examples of the substituent include an alkoxy group having a carbon number of 1 to 6, a halogen atom, a cyano group, a nitro group, a fluorenyl group, and a decyloxy group. The phenoxy group-containing amine compound and the phenoxy group-containing ammonium salt compound are compounds in which the alkyl group of the amine compound or the ammonium salt compound has a phenoxy group at the terminal end opposite to the nitrogen atom. The phenoxy group may have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group, a sulfonate group, an aryl group, an aralkyl group, and an anthracene group. And aryloxy. The substitution position of the substituent may be any position from 2 to 6 positions, and the number of the substituents may be any one in the range of from 1 to 5. The compound preferably has at least one oxygen alkyl group between the phenoxy group and the nitrogen atom. The number of oxygen alkyl groups in the molecule is 1 or more, and more preferably from 3 to 9 is more preferably from 4 to 6. Among the oxygen alkyl groups, an oxygen-extended ethyl group (-CH2CH2〇- and an oxygen-extended propyl group (-ch(ch3)ch2o- or -ch2ch2ch2o-) is preferred, and an oxygen-extended ethyl group is more preferred. The sulfonate group in the amine compound of the ester group and the ammonium salt compound containing a sulfonate group may be any one of an alkyl sulfonate, a cycloalkyl sulfonate and an aryl sulfonate. In the example of the sulfonate, the alkyl group has a carbon number of 1 to 20; in the case of the cycloalkyl sulfonate, the cycloalkyl group has a carbon number of 3 to 20; and the aryl sulfonic acid In the example of the ester, the aryl group preferably has a carbon number of 6 to 12. The alkyl sulfonate, cycloalkyl sulfonate and aryl sulfonate may have a substituent, and the substituent is a halogen atom and a cyanogen. Base, -158-201033733 Preferably, a nitro group, a carboxyl group, a carboxylate group or a sulfonate group. The compound preferably has at least one oxygen-extended alkyl group between the sulfonate group and the nitrogen atom. The number of oxygen alkyl groups is 1 or more, and preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, oxygen-extended ethyl (-CH2CH20-) and oxygen-extended propyl (- CH(CH3)CH20- or -CH2CH2CH2〇-) Good, and the oxygen better stretch ethyl. Examples of the basic compound, the following compounds are also preferred.

可單獨使用這些鹼性化合物之一或可組合著使用其二 或更多種。 該鹼性化合物的使用量通常從0.001至10質量%,從 0.01至5質量%較佳,以該感光化射線或感放射線樹脂組 成物的全部固體含量爲準。 摻合在該組成物中的酸產生劑與鹼性化合物之比率爲 酸產生劑/鹼性化合物(以莫耳計)=從2.5至3 00較佳。也就 是說,考慮到靈敏度及解析度,該莫耳比率爲2.5或更大 較佳;及從抑制解析度由於光阻圖案在曝露至熱處理後隨 著時效增厚而減低的觀點來看,300或較少較佳。該酸產 生劑/鹼性化合物(以莫耳計)從5.0至200更佳,從7.0至 150又更佳。 就在下列描述之對具有能藉由酸作用離去的基團之低 -159- 201033733 分子化合物(D)的比率來使用此驗性化合物較佳,ioo/ο至 10/90的莫耳比率(具有能藉由酸作用離去的基團之低分子 化合物(D)/鹸性化合物),更特別是莫耳比率(具有能藉由酸 作用離去的基團之低分子化合物(D)/鹼性化合物)100/0至 3 0/70 ’莫耳比率(具有能藉由酸作用離去的基團之低分子 化合物(D)/鹼性化合物)ι〇〇/〇至50/50又更佳。 附隨地,於此之鹼性化合物不包括具有能藉由酸作用 離去的基團之低分子化合物(D),當此亦爲鹼性化合物時。 [6]具有能藉由酸作用離去的基團之低分子化合物(D) 本發明之組成物可包括具有能藉由酸作用離去的基團 之低分子化合物(D)(有時指爲組分(D))。該能藉由酸作用離 去的基團無特別限制,但是乙縮醛基團、碳酸鹽基團、胺 基甲酸酯基團、三級酯基團、三級羥基或半胺醛 (hemiaminal)醚基團較佳,胺基甲酸酯基團或半胺醛醚基團 更佳。 具有能藉由酸作用離去的基團之低分子化合物的分子 量從1〇〇至1,〇〇〇較佳,從1〇〇至700更佳,從1〇〇至500 又更佳。 在該具有能藉由酸作用離去的基團之低分子化合物具 有三級酯結構的實例中,該化合物爲由下列式(la)所表示 的羧酸酯或不飽和羧酸酯較佳:One of these basic compounds may be used alone or two or more of them may be used in combination. The amount of the basic compound to be used is usually from 0.001 to 10% by mass, preferably from 0.01 to 5% by mass, based on the total solid content of the sensitized ray or the radiation-sensitive resin composition. The ratio of the acid generator to the basic compound blended in the composition is an acid generator/basic compound (in terms of moles) = preferably from 2.5 to 300. That is, in view of sensitivity and resolution, the molar ratio is preferably 2.5 or more; and from the viewpoint of suppressing resolution, since the photoresist pattern is reduced with age thickening after exposure to heat treatment, 300 Or less preferred. The acid generator/basic compound (in terms of moles) is more preferably from 5.0 to 200, still more preferably from 7.0 to 150. It is preferred to use the test compound at a ratio of the low-159-201033733 molecular compound (D) having a group which can be removed by an acid as described below, and a molar ratio of ioo/o to 10/90. a low molecular compound (D)/an inert compound having a group capable of leaving by an acid action, more particularly a molar ratio (a low molecular compound having a group capable of leaving by an acid action (D) /Basic compound) 100/0 to 3 0/70 'Mole ratio (low molecular compound (D) / basic compound having a group which can be removed by acid) ι〇〇 / 〇 to 50/50 Better yet. Incidentally, the basic compound herein does not include the low molecular compound (D) having a group which can be removed by an acid, and when this is also a basic compound. [6] Low Molecular Compound (D) Having a Group Departable by Acid Action The composition of the present invention may include a low molecular compound (D) having a group capable of leaving by an acid action (sometimes referred to as For component (D)). The group which can be removed by acid is not particularly limited, but an acetal group, a carbonate group, a urethane group, a tertiary ester group, a tertiary hydroxy group or a hemiamine aldehyde (hemiaminal) The ether group is preferred, and the urethane group or the semi-amine aldehyde ether group is more preferred. The molecular weight of the low molecular compound having a group capable of leaving by acid action is preferably from 1 Torr to 1, preferably from 1 Torr to 700, more preferably from 1 Torr to 500. In the case where the low molecular compound having a group which can be removed by an acid has a tertiary ester structure, the compound is preferably a carboxylate or an unsaturated carboxylate represented by the following formula (la):

201033733 在式(la)中,每個R1各自獨立地代表單儈脂環烴基團 (具有碳數4至20較佳)或其衍生物或烷基(具有碳數1至4 較佳),同時至少一個R1爲脂環烴基團或其衍生物;或同 時任何二個R1彼此與它們所鍵結的碳原子一起結合以形 成二價脂環烴基團(具有碳數4至20較佳)或其衍生物,剩 餘的Ri代表烷基(具有碳數1至4較佳)或單價脂環烴基團 (具有碳數4至20較佳)或其衍生物。 每個X各自獨立地代表氫原子或羥基,及至少一個X 〇 爲羥基。 A代表單鍵或二價連結基團,且單鍵或由-D-COO-所表 示的基團(其中D代表伸烷基(具有碳數1至4較佳))較佳。 在式(la)中,該作爲A的二價連結基團之實施例包括 亞甲基、亞甲基羰基、亞甲基羰基氧基、伸乙基、伸乙基 羰基、伸乙基羰基氧基、伸丙基、伸丙基羰基、伸丙基羰 基氧基,且亞甲基羰氧基較佳。 在式(la)中,該R!的單價脂環烴基團(具有碳數4至 © 20較佳)及該藉由任何二個L彼此結合所形成之二價脂環 烴基團(具有碳數4至20較佳)的實施例包括由衍生自降范 烷、三環癸烷、四環十二烷或環烷(諸如環丁烷、環戊院、 環己烷、環庚烷及環辛烷)的脂環族環所組成之基團;及該 由脂環族環所組成的基團由一或多種或一或多組具有碳數 1至4的院基(諸如甲基、乙基 '正丙基、異丙基、正丁基、 2 -甲基丙基、1-甲基丙基及三級丁基)及環烷基取代之基 團。在這些脂環烴基團當中,由衍生自降范垸、三環癸院、 -161- 201033733 四環十二烷、金剛烷、環戊烷或環己烷的脂環族環所組成 之基團,及其中該由脂環族環所組成的基團由上述烷基取 代之基團較佳。 該脂環烴基團的衍生物之實施例包括具有一或多種或 一或多組下列取代基的基團,諸如羥基;羧基;側氧基團 (即,=0);具有碳數1至4的羥烷基,例如,羥甲基、h 羥乙基、2-羥乙基、1-羥丙基、2-羥丙基、3-羥丙基、1-羥丁基、2_羥丁基、3-羥丁基及4-羥丁基;具有碳數1至4 的烷氧基,例如,甲氧基、乙氧基、正丙氧基、異丙氧基、 正丁氧基、2-甲基丙氧基、1-甲基丙氧基及三級丁氧基; 氰基;及具有碳數2至5的氰烷基,例如,氰甲基、2_氰 乙基、3-氰丙基及4-氰丁基。在這些取代基當中,羥基、 羧基、羥甲基、氰基及氰甲基較佳。 該R1的烷基之實施例包括具有碳數1至4的烷基,諸 如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、 1-甲基丙基及三級丁基。在這些烷基當中,甲基、乙基、 正丙基及異丙基較佳。 特定的較佳實施例包括下列化合物。 -162- 201033733201033733 In the formula (1), each R1 independently represents a monoaliphatic cyclic hydrocarbon group (having preferably 4 to 20 carbon atoms) or a derivative thereof or an alkyl group (having preferably 1 to 4 carbon atoms), At least one R1 is an alicyclic hydrocarbon group or a derivative thereof; or at the same time, any two R1 groups are bonded to each other with a carbon atom to which they are bonded to form a divalent alicyclic hydrocarbon group (having preferably a carbon number of 4 to 20) or The derivative, the remaining Ri represents an alkyl group (having preferably a carbon number of 1 to 4) or a monovalent alicyclic hydrocarbon group (having a carbon number of 4 to 20 is preferred) or a derivative thereof. Each X independently represents a hydrogen atom or a hydroxyl group, and at least one X 〇 is a hydroxyl group. A represents a single bond or a divalent linking group, and a single bond or a group represented by -D-COO- (wherein D represents an alkylene group (having preferably a carbon number of 1 to 4) is preferable. In the formula (la), examples of the divalent linking group as A include a methylene group, a methylene carbonyl group, a methylene carbonyloxy group, an ethyl group, an ethyl carbonyl group, and an ethyl carbonyl group. A propyl group, a propyl propyl group, a propyl carbonyl group, and a methylene carbonyl group are preferred. In the formula (la), the R! monovalent alicyclic hydrocarbon group (having a carbon number of 4 to 20 is preferred) and the divalent alicyclic hydrocarbon group (having a carbon number) formed by combining any two Ls with each other Examples of 4 to 20 preferred) include derivatives derived from norvanane, tricyclodecane, tetracyclododecane or cycloalkane (such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane). a group consisting of an alicyclic ring of an alkane; and the group consisting of an alicyclic ring consisting of one or more or one or more groups having a carbon number of 1 to 4 (such as methyl or ethyl) 'N-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and tert-butyl) and cycloalkyl-substituted groups. Among these alicyclic hydrocarbon groups, a group consisting of an alicyclic ring derived from a dioxin, a tricyclic brothel, -161-201033733 tetracyclododecane, adamantane, cyclopentane or cyclohexane And a group in which the group consisting of the alicyclic ring is substituted by the above alkyl group is preferred. Examples of derivatives of the alicyclic hydrocarbon group include groups having one or more or one or more groups of the following substituents, such as a hydroxyl group; a carboxyl group; a pendant oxygen group (ie, =0); having a carbon number of 1 to 4 Hydroxyalkyl, for example, hydroxymethyl, h hydroxyethyl, 2-hydroxyethyl, 1-hydroxypropyl, 2-hydroxypropyl, 3-hydroxypropyl, 1-hydroxybutyl, 2-hydroxylated a 3-hydroxybutyl group and a 4-hydroxybutyl group; an alkoxy group having 1 to 4 carbon atoms, for example, a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, 2-methylpropoxy, 1-methylpropoxy and tert-butoxy; cyano; and cyanoalkyl having 2 to 5 carbon atoms, for example, cyanomethyl, 2-cyanoethyl, 3 - cyanopropyl and 4-cyanobutyl. Among these substituents, a hydroxyl group, a carboxyl group, a methylol group, a cyano group and a cyanomethyl group are preferred. Examples of the alkyl group of R1 include an alkyl group having a carbon number of 1 to 4, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropane. Base and tertiary butyl. Among these alkyl groups, a methyl group, an ethyl group, a n-propyl group and an isopropyl group are preferred. Specific preferred embodiments include the following compounds. -162- 201033733

在該低分子化合物爲不飽和羧酸酯的實例中,該化合 物爲(甲基)丙烯酸酯較佳。下列提出該具有三級烷基作爲 能藉由酸作用離去的基團之(甲基)丙烯酸三級酯的特定實 施例,但是本發明不限於此。(在該等式中,Rx代表H、 CH3、CF3或CH2OH,及Rxa與Rxb各者代表具有碳數1 至4的烷基。) -163- 201033733In the case where the low molecular compound is an unsaturated carboxylic acid ester, the compound is preferably a (meth) acrylate. A specific embodiment of the (meth)acrylic acid tertiary ester having a tertiary alkyl group as a group which can be removed by an acid is proposed below, but the invention is not limited thereto. (In the equation, Rx represents H, CH3, CF3 or CH2OH, and Rxa and Rxb each represent an alkyl group having a carbon number of 1 to 4.) -163- 201033733

至於該具有能藉由酸作用離去的基團之低分子化合物 (D),可使用可商業購得的產物或該化合物可藉由已知方法 合成β 同樣地,在氮原子上具有能藉由酸作用離去的基團之 胺衍生物作爲該組分D較佳。 該組分D可在氮原子上具有一含保護基團的胺基甲酸 酯基團。構成該胺基甲酸酯基團的保護基團可由下列式 (d-1)表示: -164- 201033733As the low molecular compound (D) having a group which can be removed by an acid, a commercially available product can be used or the compound can be synthesized by a known method. Similarly, it can be borrowed on a nitrogen atom. As the component D, an amine derivative of a group which is removed by an acid action is preferred. This component D may have a protecting group-containing urethane group on the nitrogen atom. The protecting group constituting the urethane group can be represented by the following formula (d-1): -164- 201033733

(d — 1 )(d - 1)

在式(d-1)中,每個R,各自獨立地代表氫原子、線性、 分支或環狀的烷基、芳基、芳烷基或烷氧基烷基。每個玟 可與每個其它R’結合以形成環。 R’爲線性或分支烷基、環烷基或芳基較佳,線 支烷基或環烷基更佳。In the formula (d-1), each R independently represents a hydrogen atom, a linear, branched or cyclic alkyl group, an aryl group, an arylalkyl group or an alkoxyalkyl group. Each 玟 can be combined with each other R' to form a ring. R' is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group, more preferably a branched alkyl group or a cycloalkyl group.

下列提出由式(d-Ι)所表示的基團之特定結構 >ΛΧ 人>〇^ 人义 Axq 气 Ά ΛΡ vVp 从 vVP ?人分vV分v^> ΆThe following describes the specific structure of the group represented by the formula (d-Ι) >ΛΧ人>〇^ 人义 Axq 气 Ά ΛΡ vVp from vVP ?人分vV分v^> Ά

Λ— ΛΧ- Λχ^ Kxoi^ \ΛΛ— ΛΧ- Λχ^ Kxoi^ \Λ

該組分D亦可藉由任意地結合 與由式(d-1)所表示的結構來組成。This component D can also be composed by arbitrarily combining with the structure represented by the formula (d-1).

八 A'Eight A'

〇Μ·〇Μ·

述插述的 鹼性化合物 -165- 201033733 該組分D爲具有由下列式(A)所表示的結構之化合物 更佳。 附隨地,該組分D可爲與上述描述的鹼性化合物相應 之化合物,只要其具有能藉由酸作用離去的基團之低分子 化合物。The intercalated basic compound -165- 201033733 This component D is more preferably a compound having a structure represented by the following formula (A). Incidentally, the component D may be a compound corresponding to the basic compound described above as long as it has a low molecular compound capable of leaving a group by acid action.

(A) 在式(A)中,每個Ra各自獨立地代表氫原子、烷基、 環烷基、芳基或芳烷基。同樣地,當n = 2時,二個Ra可相 同或不同,及二個Ra可彼此結合以形成雜環烴基團(具有 碳數20或較少較佳)或其衍生物。 每個Rb各自獨立地代表氫原子、烷基、環烷基、芳基 或芳烷基。 至少二個Rb可結合以形成脂環烴基團、芳香烴基團、 雜環烴基團或其衍生物。 η代表整數0至2,m代表整數1至3及n + m = 3。 在式(A)中,該Ra及Rb的院基、環院基、芳基及芳院 基各者可由下列官能基代替,諸如羥基、氰基、胺基、吡 咯啶基、哌啶基、嗎福啉基及側氧基團、烷氧基或鹵素原 子。 該Ra及Rb的烷基、環烷基、芳基及芳烷基(這些烷基、 環烷基、芳基及芳烷基各者可由上述描述的官能基、烷氧 基或鹵素原子取代)之實施例包括: -166- 201033733 衍生自線性或分支烷烴(諸如甲烷、乙烷、丙烷、丁烷、 戊烷、己烷、庚烷、辛烷、壬烷、癸烷、十一烷及十二烷) 的基團;或該衍生自烷烴的基團由一或多種或一或多組環 烷基(諸如環丁基、環戊基及環己基)取代之基團; 衍生自環烷(諸如環丁烷、環戊烷、環己烷、環庚院、 環辛烷、降萡烷、金剛烷及降金剛烷)的基團;或該衍生自 環烷的基團由一或多種或一或多組線性或分支烷基(諸如 甲基、乙基、正丙基、異丙基、正丁基、2 -甲基丙基、ΙΟ 甲基丙基及三級丁基)取代之基團; 衍生自芳香族化合物(諸如苯、萘及蒽)的基團;或一 該衍生自芳香族化合物的基團由一或多種或一或多組線性 或分支烷基(諸如甲基、乙基、正丙基、異丙基、正丁基、 2-甲基丙基、1-甲基丙基及三級丁基)取代之基團; 衍生自雜環化合物(諸如吡咯啶、哌啶、嗎福啉、四氫 呋喃、四氫哌喃、吲哚、吲哚啉、喹啉、全氫喹啉、吲唑 及苯并咪唑)的基團;或該衍生自雜環化合物的基團由一或 &多種或一或多組線性或分支烷基或芳香族化合物衍生出的 基團取代之基團;該衍生自線性或分支烷烴的基團或該衍 生自環烷的基團由一或多種或一或多組芳香族化合物衍生 出的基團(諸如苯基、萘基及蒽基)取代之基團;及上述取 代基由官能基(諸如羥基、氰基、胺基、吡咯啶基、哌啶基、 嗎福啉基及側氧基團)取代的基團。 該藉由Ra彼此結合所形成的二價雜環烴基團(具有碳 數1至20較佳)或其衍生物之實施例包括衍生自下列雜環 -167- 201033733 化合物的基團,諸如吡略陡、哌旋、嗎福啉、丨,4,5,6 -四氫 嘧啶、1,2,3,4 -四氫唾啉、1,2,3,6 -四氫吡啶、升哌阱、4-V苯并咪哩、苯并二哩、5-tTf苯并三哩' ih-i,2,3 -三哩、 1,4,7 -三吖環壬院、四哩、7 -吖Π引映、0引哩、苯并咪哩、咪 哩[1,2-&]吡11定、(18,48)-( + )- 2,5-二吖雙環[2.2.1]庚院、 1,5,7-三吖雙環[4.4.0]癸-5-烯、吲哚、吲哚啉、12,3,4_四 氫喹喏琳、全氫唾啉及丨,5,9-三吖環十二院;及該衍生自 雜環化合物的基團由一或多種或一或多組下列基團取代之 基團:線性或分支烷烴衍生出的基團、環烷衍生出的基團、 芳香族化合物衍生出的基團、雜環化合物衍生出的基團、 及下列官能基:諸如羥基、氰基、胺基 '吡咯啶基、哌啶 基、嗎福啉基及側氧基團。 在本發明中之特別佳的特定實施例包括N -三級丁氧基 羰基二正辛胺、N-三級丁氧基羰基二正壬胺、N-三級丁氧 基羰基二正癸胺、N-三級丁氧基羰基二環己胺、N-三級丁 氧基羰基-1-金剛烷基胺、N-三級丁氧基羰基-2-金剛烷基 胺、N-三級丁氧基羰基-N-甲基-1-金剛烷基胺、 (S)-(-)-l-(三級丁氧基羰基)·2·吡咯聢甲醇、(R)-( + )-l-(三 級丁氧基羰基)-2 -吡咯啶甲醇、N -三級丁氧基羰基-4-羥基 哌啶、N-三級丁氧基羰基吡咯啶、N-三級丁氧基羰基嗎福 啉、N-三級丁氧基羰基哌阱、N,N-雙三級丁氧基羰基-1-金 剛烷基胺、N,N-雙三級丁氧基羰基-N-甲基-卜金剛烷基 胺、N-三級丁氧基羰基_4,4’-二胺基二苯基甲烷、N,N,-雙 三級丁氧基羰基己二胺、n,n,n,,n’-四-三級丁氧基羰基己 -168 - 201033733 二胺、N,N’-雙三級丁氧基羰基-1>7_二胺基庚烷、n,n’-雙 三級丁氧基幾基-1,8-二胺基辛烷、n,N’-雙三級丁氧基羰基 -1,9-二胺基壬院、N,N’·雙三級丁氧基羰基二胺基癸 焼、N,N’-雙二級丁氧基羰基^,丨,·二胺基十二烷、n,n,_ 二-三級丁氧基羰基-4,4’-二胺基二苯基甲烷、n-三級丁氧 基羰基苯并咪唑、N-三級丁氧基羰基_2_甲基苯并咪唑及 N-三級丁氧基羰基-2-苯基苯幷咪哩。(A) In the formula (A), each Ra each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Similarly, when n = 2, the two Ras may be the same or different, and the two Ras may be bonded to each other to form a heterocyclic hydrocarbon group (having a carbon number of 20 or less) or a derivative thereof. Each Rb independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. At least two Rbs may be combined to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof. η represents an integer of 0 to 2, and m represents an integer of 1 to 3 and n + m = 3. In formula (A), the Ra, Rb, and the aryl group and the aryl group may be replaced by the following functional groups, such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, A morpholinyl group and a pendant oxygen group, an alkoxy group or a halogen atom. The alkyl, cycloalkyl, aryl and aralkyl groups of Ra and Rb (each of which may be substituted by a functional group, an alkoxy group or a halogen atom as described above) Examples include: -166-201033733 Derived from linear or branched alkanes (such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, decane, decane, undecane, and ten a group of a dialkyl); or a group derived from an alkane substituted by one or more or one or more groups of cycloalkyl groups such as cyclobutyl, cyclopentyl and cyclohexyl; derived from a cycloalkane ( a group such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane, and adamantane; or the group derived from cycloalkane is composed of one or more or One or more groups of linear or branched alkyl groups (such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, decylmethyl, and tert-butyl) substituted groups a group derived from an aromatic compound such as benzene, naphthalene, and anthracene; or a group derived from an aromatic compound consisting of one or more or one Or a plurality of groups of linear or branched alkyl groups (such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and tert-butyl) substituted groups a group derived from a heterocyclic compound such as pyrrolidine, piperidine, morpholine, tetrahydrofuran, tetrahydropyran, hydrazine, porphyrin, quinoline, perhydroquinoline, oxazole, and benzimidazole. Or a group substituted with a group derived from a heterocyclic compound by a group derived from one or more groups or one or more groups of linear or branched alkyl or aromatic compounds; the group derived from a linear or branched alkane a group or a group derived from a cycloalkane group substituted with one or more groups derived from one or more groups of aromatic compounds, such as a phenyl group, a naphthyl group and an anthracenyl group; and the above substituents are functional groups a group substituted with a group such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group, and a pendant oxygen group. Examples of the divalent heterocyclic hydrocarbon group (having preferably having a carbon number of 1 to 20) or a derivative thereof formed by bonding Ra to each other include a group derived from a compound of the following heterocyclic ring-167-201033733, such as pyridine Steep, piperazine, morpholine, indole, 4,5,6-tetrahydropyrimidine, 1,2,3,4-tetrahydropyrazine, 1,2,3,6-tetrahydropyridine, liters, 4-V benzopyrene, benzodiazepine, 5-tTf benzotrimium ih-i, 2,3 - triterpenoid, 1,4,7 - tricyclic ring broth, four 哩, 7 -吖Π, 0 哩, benzopyrene, imipen [1,2-&]pyridine, (18,48)-( + )- 2,5-diguanidine [2.2.1]g Institute, 1,5,7-triazine bicyclo[4.4.0]non-5-ene, anthracene, porphyrin, 12,3,4_tetrahydroquinoxaline, perhydropipeline and hydrazine, 5, 9-三吖环十二院; and the group derived from the heterocyclic compound is substituted by one or more groups or groups of the following groups: linear or branched alkane derived groups, naphthenic derived a group derived from an aromatic compound, a group derived from a heterocyclic compound, and the following functional groups: such as a hydroxyl group, a cyano group, an amino group 'pyrrolidinyl group, a piperidine group , It Fu oxo group and morpholinyl. Particular embodiments which are particularly preferred in the present invention include N-tertiary butoxycarbonyldi-n-octylamine, N-tertiary butoxycarbonyldi-n-decylamine, N-tertiary butoxycarbonyldi-n-decylamine , N-tertiary butoxycarbonyldicyclohexylamine, N-tertiary butoxycarbonyl-1-adamantylamine, N-tertiary butoxycarbonyl-2-adamantylamine, N-third Butoxycarbonyl-N-methyl-1-adamantylamine, (S)-(-)-l-(tertiary butoxycarbonyl)·2·pyrrole methanol, (R)-( + )- L-(tertiary butoxycarbonyl)-2-pyrrolidinemethanol, N-tertiary butoxycarbonyl-4-hydroxypiperidine, N-tertiary butoxycarbonylpyrrolidine, N-tertiary butoxy Carbonylmorpholine, N-tertiary butoxycarbonyl pipe trap, N,N-bis-tertiary butoxycarbonyl-1-adamantylamine, N,N-di-tertiary butoxycarbonyl-N- Base-b-adamantylamine, N-tertiary butoxycarbonyl-4,4'-diaminodiphenylmethane, N,N,-bis-tert-butoxycarbonylhexamethylenediamine, n,n, n,,n'-tetra-tertiary butoxycarbonylhexyl-168 - 201033733 diamine, N,N'-bis-tertiary butoxycarbonyl-1>7-diaminoheptane, n,n'- Double three-stage butoxy -1,8-diaminooctane, n,N'-bis-tertiary butoxycarbonyl-1,9-diamino fluorene, N,N'.di-tertiary butoxycarbonyldiamine hydrazine焼,N,N'-bis-two-butoxycarbonyl, hydrazine, diaminododecane, n,n,_di-tertiary butoxycarbonyl-4,4'-diaminodiphenyl Methane, n-tertiary butoxycarbonylbenzimidazole, N-tertiary butoxycarbonyl-2-methylbenzimidazole and N-tertiarybutoxycarbonyl-2-phenylbenzoquinone.

下列提出在本發明中特別佳的組分D之特定實施例, 但是本發明不限於此。Specific embodiments of component D which are particularly preferred in the present invention are set forth below, but the invention is not limited thereto.

'169. 201033733'169. 201033733

(D-37)(D-37)

(D-3Q(D-3Q

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々N人。火^ 。久 ό (1>42)个 (D-38)々N people. Fire ^. Long time (1 > 42) (D-38)

ΗΝ" Ό ΟΗΝ" Ό Ο

ό (045) eό (045) e

ο ο •Λ Ν 人ο ο •Λ Ν people

P-47) 又。七 (D-46) (D-4B) 0二w。w》0又。兮 HCTv HO (D-4S) P-50) (D-51) (D-52) 由式(A)所表示的化合物可藉由描述例如在”在有機合 成中的保護基(Protective Groups in Organic Synthesis) ’ 第 4版”中之方法,從可商業購得的胺容易地合成。最一般的 方法爲造成二碳酸酯或鹵甲酸酯作用在可商業購得的胺上 來獲得該化合物的方法。在該等式中,X代表鹵素原子, 及1^與Rb具有與在上述式(A)中的Ra與Rb相同的意義。 -170- 201033733P-47) Again. Seven (D-46) (D-4B) 0 two w. w》0 again.兮HCTv HO (D-4S) P-50) (D-51) (D-52) The compound represented by the formula (A) can be described by, for example, "Protective Groups in Organic" (Protective Groups in Organic Synthesis) The method in '4th Edition' is readily synthesized from commercially available amines. The most general method is a method for causing a dicarbonate or a haloformate to act on a commercially available amine to obtain the compound. In the equation, X represents a halogen atom, and 1 and Rb have the same meanings as Ra and Rb in the above formula (A). -170- 201033733

成Α>Ά或人々 ... Rb gA人或 a —κιι-L. ·_ i . v>- Ra—N 在本發明中’可單獨使用一種具有能藉由酸作用離去 Ο 的基團之低分子化合物(D),或可混合及使用二或更多種該 等化合物。 在本發明中’該具有能藉由酸作用離去的基團之低分 子化合物(D)的使用量通常從o.ooi至20質量%,且從0.001 至10質量%較佳’從0.01至5質量%更佳,以該組成物與 下列提及的鹼性化合物結合之全部固體化合物爲準。 當在該組成物中使用該酸產生劑與該具有能藉由酸作 用離去的基團之低分子化合物時,於此之間的比率爲酸產 m% 生劑/[具有能藉由酸作用離去的基團之低分子化合物(D) + 上述描述的鹼性化合物](以莫耳計)=從2.5至3〇 〇較佳。也 就是說’考慮到靈敏度及解析度,該莫耳比率爲2.5或更 大較佳;及從抑制解析度由於光阻圖案在曝露至熱處理後 隨著時效增厚而減低的觀點來看,3〇〇或較少較佳。該酸 產生劑/ [具有能藉由酸作用離去的基團之低分子化合物 (D) +上述描述的驗性化合物](以莫耳計)從5 〇至2〇〇更 佳,從7.0至150又更佳。 -171- 201033733 [7]界面活性劑 本發明之感光化射線或感放射線樹脂組成物可進一步 包括界面活性劑,及在包含界面活性劑的實例中,該組成 物包括含氟及/或含矽界面活性劑(含氟界面活性劑、含矽 界面活性劑及包含氟原子及矽原子二者之界面活性劑)的 任何一種、或其二或更多種較佳。 藉由將上述描述的界面活性劑倂入本發明之感光化射 線或感放射線樹脂組成物中,當使用25 0奈米或較短(特別 是220奈米或較短)的曝光光源時,可提供就靈敏度、解析 度及黏附力和較少顯影缺陷來說具有好的性能之光阻圖 案。 另一方面,當該界面活性劑的加入量少(例如,設定至 10 ppm或較少)時,更成功地允許該組分(C)對表面的不均 勻分布,以便該光阻薄膜表面可製成更疏水性及可提高在 沉浸曝光時的水流動性》 該含氟及/或含矽界面活性劑的實施例包括描述在下 列中的界面活性劑:JP-A-62-36663、 JP-A-61-226746、 JP-A-61 -226745 、 JP-A-62- 1 709 5 0 、 JP-A-63 - 3 4 5 40 、 JP-A-7-23 0 1 65 、 JP-A- 8-628 3 4 、 JP-A-9- 5 44 3 2 、 JP-A-9-5988、 JP-A-2002-277862 及美國專利 5,405,720、 5,360,692 ' 5,529,88 1 ' 5,296,3 3 0 > 5,43 6,09 8 ' 5,5 76,1 43 -5,294,5 1 1及5,824,45 1。下列可商業購得的界面活性劑每 種亦可如其所是般使用。 可使用之可商業購得的界面活性劑之實施例包括含氟 -172- 201033733 界面活性劑及含矽界面活性劑,諸如愛夫脫普 (EFtop)EF301 及 EF3 03 (由新秋田化成(股)(Shin-Akita KaseiK. Κ·)製造);浮羅雷德(Florad)FC430、431 及 4430(由 住友 3M 公司(Sumitomo 3 M Inc.)製造);美加費斯 (Megaface)F171、 F173、 F176、 F189、 F113、 F110、 F177、 F120及 R〇8(由大日本油墨及化學公司(Dainippon Ink & Chemicals, Inc.)製造);蛇浮隆(Surflon)S-3 82、SC101、 102、103、104、105及106(由朝日玻璃有限公司(As ah i Glass 〇 Co.,Ltd.)製造);錯伊梭(Troysol)S-366(由錯伊化學(Troy Chemical)製造);GF-3 00及GF-150(由東亞合成化學工業 有限公司(Toagosei Chemical Industry Co.,Ltd·)製造);蛇 浮隆S-393(由清美化學有限公司(Seimi Chemical Co.,Ltd·) 製造);愛夫脫普 EF121、EF122A、EF122B、RF122C、 EF125M、EF135M、EF35 卜 EP352、EF8(H、EF802 及 EF601(由 傑姆柯公司(JEMCO Inc.)製造);PF636、PF656、PF6320 及 PF6520(由歐諾瓦(OMNOVA)製造);及 FTX-204G、 © 208G、2 1 8G、230G、204D、208D、2 1 2D、2 1 8D 及 222D(由 尼歐斯有限公司(NEOS Co.,Ltd.)製造此外,亦可使用 聚矽氧烷聚合物KP-341(由信越化學有限公司(Shin-Etsu Chemical Co., Ltd.)製造)作爲該含矽界面活性劑。 至於該界面活性劑,除了這些已知的界面活性劑外, 可使用使用具有衍生自氟-脂肪族化合物的氟-脂肪族基團 之聚合物的界面活性劑,其中該氟-脂肪族化合物藉由調節 聚合方法(亦稱爲調聚物方法)或寡聚化方法(亦稱爲寡聚物 -173- 201033733 方法)製造。該氟-脂肪族化合物可藉由描述在 JP-A-2002-90991中的方法合成。 該具有氟-脂肪族基團的聚合物爲含氟-脂肪族基團的 單體與(聚(氧伸烷基))丙烯酸酯及/或(聚(氧伸烷基))甲基 丙烯酸酯之共聚物較佳;及該聚合物可具有不規則的分布 或可爲嵌段共聚物。該聚(氧伸烷基)的實施例包括聚(氧伸 乙基)、聚(氧伸丙基)及聚(氧伸丁基)。此基團亦可爲在相 同鏈內具有不同鏈長的伸烷基之單元,諸如嵌段連結的聚 (氧伸乙基、氧伸丙基及氧伸乙基)及嵌段連結的聚(氧伸乙 基及氧伸丙基)。再者,該含氟-脂肪族基團的單體與(聚(氧 伸烷基))丙烯酸酯(或甲基丙烯酸酯)之共聚物不僅限於二 元共聚物,而且亦可爲藉由同步地共聚合二或更多種不同 的含氟-脂肪族基團之單體或二或更多種不同的(聚(氧伸烷 基))丙烯酸酯(或甲基丙烯酸酯)所獲得之三元或更多元共 聚物。 其實施例包括下列作爲可商業購得的界面活性劑:美 加費斯 F178 ' F-470、 F-473、 F-475、 F-476 及 F-472(由大 曰本油墨及化學公司製造):及進一步包括含C6F13基團的 丙烯酸酯(或甲基丙烯酸酯)與(聚(氧伸烷基))丙烯酸酯(或 甲基丙烯酸酯)之共聚物,及含C3F7基團的丙烯酸酯(或甲 基丙烯酸酯)與(聚(氧伸乙基))丙烯酸酯(或甲基丙烯酸酯) 及(聚(氧伸丙基))丙烯酸酯(或甲基丙烯酸酯)之共聚物。 在本發明中,亦可使用除了含氟及/或含矽界面活性劑 外的界面活性劑。其特定實施例包括非離子界面活性劑’ -174- 201033733 諸如聚氧伸乙基烷基醚類(例如,聚氧伸乙基月桂基酸、聚 氧伸乙基硬脂基醚、聚氧伸乙基鯨蠟基醚、聚氧伸乙基油 烯基醚)、聚氧伸乙基烷基芳基醚類(例如,聚氧伸乙基辛 基酚醚、聚氧伸乙基壬基酚醚)、聚氧伸乙基•聚氧伸丙基 嵌段共聚物、脫水山梨糖醇脂肪酸酯類(例如,單月桂酸脫 水山梨糖醇酯、單棕櫚酸脫水山梨糖醇酯、單硬脂酸脫水 山梨糖醇酯、單油酸脫水山梨糖醇酯、三油酸脫水山梨糖 醇酯、三硬脂酸脫水山梨糖醇酯)、及聚氧伸乙基脫水山梨 〇 糖醇脂肪酸酯類(例如,聚氧伸乙基單月桂酸脫水山梨糖醇 酯、聚氧伸乙基單棕櫚酸脫水山梨糖醇酯、聚氧伸乙基單 硬脂酸脫水山梨糖醇酯、聚氧伸乙基三油酸脫水山梨糖醇 酯、聚氧伸乙基三硬脂酸脫水山梨糖醇酯)。 可單獨使用此界面活性劑之一或可組合著使用其一 些。 該界面活性劑的使用量從0至2質量%較佳,從0.00 0 1 至2質量%更佳,從0.0005至1質量%又更佳,以該感光 〇 化射線或感放射線樹脂組成物的全部固體含量爲準(全部 的量排除溶劑)。 [8]羧酸鎗 本發明之感光化射線或寧放射線樹脂組成物可包括羧 酸鎗。該羧酸鑰的實施例包括羧酸锍、羧酸鎭及羧酸銨。 特別是,該羧酸鑰爲碘鹽或鏑鹽較佳。再者,該使用在本 發明中的羧酸鑰之羧酸鹽殘基不包含芳香基團且無碳-碳 雙鍵較佳。該陰離子部分爲具有碳數1至30之線性或分 -175- 201033733 支、單環或多環的烷基羧酸酯陰離子較佳,上述含有烷基 的羧酸鹽陰離子部分或全部經氟取代更佳。該烷基鏈可包 括氧原子。由於此架構,保證對22 0奈米或較短的光之穿 透度、提高靈敏度及解析度、及改良孤立/密集偏差及曝光 邊緣。 該經氟取代的羧酸鹽陰離子之實施例包括氟醋酸鹽、 二氟醋酸鹽、三氟醋酸鹽、五氟丙酸鹽、七氟丁酸鹽、九 氟戊酸鹽、全氟十二烷酸鹽、全氟十三烷酸鹽、全氟環己 烷羧酸鹽及2,2-雙三氟甲基丙酸鹽陰離子。 這些羧酸鑰可藉由在適當的溶劑中讓氫氧化锍、碘或 銨及羧酸與氧化銀反應而合成。 在該組成物中的羧酸鑰含量通常從0.1至20質量%, 且從0 · 5至1 0質量%較佳,從1至7質量%更佳,以該組 成物的全部固體含量爲準。 [9]具有分子量3,000或較少且能藉由酸作用分解以增加在 鹼性顯影劑中的溶解度之溶解抑制化合物 本發明之感光化射線或感放射線樹脂組成物可包括具 有分子量3,000或較少且能藉由酸作用分解以增加在鹼性 顯影劑中的溶解度之溶解抑制化合物(於此之後,有時指爲 ”溶解抑制化合物”)。該溶解抑制化合物爲包含可酸分解的 基團之脂環族或脂肪族化合物較佳(諸如,描述在SPIE的 會議記錄’ 2724,3 55( 1 996)中之含可酸分解的基團之膽酸 衍生物),如此不減低對220奈米或較短的光之穿透度。該 可酸分解的基團及脂環族結構之實施例與上述關於該組分 -176- 201033733 (A)的樹脂之那些描述相同。 在藉由KrF準分子雷射或以電子束照射來曝光本發明 之感光化射線或感放射線樹脂組成物的實例中,該組成物 包括一該酚化合物的酚羥基由可酸分解的基團取代之結構 較佳。該酚化合物爲包含從1至9個酚骨架的化合物較佳, 從2至6個酚骨架更佳。 該使用在本發明中之溶解抑制化合物的分子量爲 3,000或較低,從300至3,000較佳,從500至2,500更佳。 Ο 該溶解抑制化合物的加入量從2至50質量%較佳,從 3至3 0質量%更佳,從5至1 0質量%又更佳,以該感光化 射線或感放射線樹脂組成物的全部固體含量爲準。 下列提出該溶解抑制化合物的特定實施例,但是本發 明不限於此。Α Α Ά R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R The low molecular compound (D), or two or more of these compounds may be mixed and used. In the present invention, the amount of the low molecular compound (D) having a group capable of leaving by acid action is usually from o.ooi to 20% by mass, and from 0.001 to 10% by mass, preferably from 0.01 to More preferably, 5 mass%, based on the total solid compound in which the composition is combined with the basic compound mentioned below. When the acid generator is used in the composition and the low molecular compound having a group capable of leaving by acid action, the ratio between the two is an acid-producing agent/[having an acid by acid The low molecular compound (D) which acts on the leaving group + the basic compound described above (in terms of moles) = preferably from 2.5 to 3 Å. That is to say, 'the molar ratio is preferably 2.5 or more in consideration of sensitivity and resolution; and from the viewpoint of suppressing the resolution, since the photoresist pattern is reduced with age thickening after exposure to heat treatment, 3 〇〇 or less preferred. The acid generator / [low molecular compound (D) having a group capable of leaving by acid action + the above-mentioned test compound] (in terms of mole) is more preferably from 5 〇 to 2 , from 7.0 It is better to 150. -171- 201033733 [7] Surfactant The sensitized ray or radiation sensitive resin composition of the present invention may further comprise a surfactant, and in the case of including a surfactant, the composition includes fluorine-containing and/or ruthenium-containing Any one or two or more of a surfactant (a fluorine-containing surfactant, a ruthenium-containing surfactant, and a surfactant containing both a fluorine atom and a ruthenium atom) is preferable. By incorporating the above-described surfactant into the sensitized ray or radiation sensitive resin composition of the present invention, when an exposure light source of 25 nm or shorter (especially 220 nm or shorter) is used, Provides a photoresist pattern with good performance for sensitivity, resolution, and adhesion and less development defects. On the other hand, when the amount of the surfactant added is small (for example, set to 10 ppm or less), the uneven distribution of the surface of the component (C) to the surface is more successfully allowed, so that the surface of the photoresist film can be Made more hydrophobic and can improve water flow during immersion exposure. Examples of the fluorine-containing and/or cerium-containing surfactant include surfactants described in JP-A-62-36663, JP -A-61-226746, JP-A-61-226745, JP-A-62- 1 709 5 0 , JP-A-63 - 3 4 5 40 , JP-A-7-23 0 1 65 , JP- A- 8-628 3 4 , JP-A-9- 5 44 3 2 , JP-A-9-5988, JP-A-2002-277862 and US Patent 5,405,720, 5,360,692 ' 5,529,88 1 ' 5,296,3 3 0 > 5,43 6,09 8 ' 5,5 76,1 43 -5,294,5 1 1 and 5,824,45 1. The following commercially available surfactants can also be used as they are. Examples of commercially available surfactants that may be used include fluorine-172-201033733 surfactants and cerium-containing surfactants, such as EFtop EF301 and EF3 03 (by New Akita Chemicals Co., Ltd.) ) (made by Shin-Akita Kasei K. Κ·); Florad FC430, 431 and 4430 (manufactured by Sumitomo 3 M Inc.); Megaface F171, F173, F176, F189, F113, F110, F177, F120 and R〇8 (manufactured by Dainippon Ink & Chemicals, Inc.); Surflon S-3 82, SC101, 102 , 103, 104, 105 and 106 (manufactured by As ah i Glass 〇 Co., Ltd.); Troysol S-366 (manufactured by Troy Chemical); GF-3 00 and GF-150 (manufactured by Toagosei Chemical Industry Co., Ltd.); Snake Fulong S-393 (Seimi Chemical Co., Ltd.) Manufacturing); EF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF35, EP352, E F8 (H, EF802 and EF601 (manufactured by JEMCO Inc.); PF636, PF656, PF6320 and PF6520 (manufactured by OMNOVA); and FTX-204G, © 208G, 2 1 8G 230G, 204D, 208D, 2 1 2D, 2 1 8D and 222D (manufactured by NEOS Co., Ltd.) In addition, polyoxyalkylene polymer KP-341 (by Shin-Etsu Chemical Co., Ltd.) Ltd. (manufactured by Shin-Etsu Chemical Co., Ltd.) as the cerium-containing surfactant. As for the surfactant, in addition to these known surfactants, it may be used to have a derivative derived from a fluorine-aliphatic compound. a surfactant of a polymer of a fluorine-aliphatic group, wherein the fluorine-aliphatic compound is adjusted by a polymerization method (also referred to as a telomer method) or an oligomerization method (also referred to as an oligomer-173) - 201033733 Method) Manufactured. The fluoro-aliphatic compound can be synthesized by the method described in JP-A-2002-90991. The fluoro-aliphatic group-containing polymer is a fluorine-containing aliphatic group monomer and (poly(oxyalkylene)) acrylate and/or (poly(oxyalkylene)) methacrylate The copolymer is preferred; and the polymer may have an irregular distribution or may be a block copolymer. Examples of the poly(oxyalkylene) group include poly(oxyethyl), poly(oxypropyl) and poly(oxybutylene). The group may also be an alkylene group having different chain lengths in the same chain, such as block-bonded poly(oxyethyl, ethyloxy, and oxyethyl) and block-linked poly( Oxygen extended ethyl and oxygen extended propyl). Furthermore, the copolymer of the fluorine-containing aliphatic group monomer and (poly(oxyalkylene)) acrylate (or methacrylate) is not limited to the binary copolymer, but may also be synchronized by Copolymerizing two or more different fluorine-fatty group monomers or two or more different (poly(oxyalkylene)) acrylates (or methacrylates) Or more or more copolymers. Examples thereof include the following commercially available surfactants: Mecafes F178 'F-470, F-473, F-475, F-476 and F-472 (manufactured by Otsuka Ink and Chemical Co., Ltd.) And further comprising a copolymer of a C6F13 group-containing acrylate (or methacrylate) and (poly(oxyalkylene)) acrylate (or methacrylate), and an acrylate having a C3F7 group ( Or a copolymer of (methacrylate) and (poly(oxyethylidene)) acrylate (or methacrylate) and (poly(oxypropyl)) acrylate (or methacrylate). In the present invention, a surfactant other than the fluorine-containing and/or barium-containing surfactant may also be used. Specific examples thereof include nonionic surfactants - 174 - 201033733 such as polyoxyethylene ethyl ethers (eg, polyoxyethylidene laurate, polyoxyethylidene ether, polyoxyalkylene) Ethyl cetyl ether, polyoxyethylene ethyl olefin ether), polyoxyethylene ethyl aryl ether (for example, polyoxyethylene ethyl octyl phenol ether, polyoxyethyl decyl phenol) Ether), polyoxyethylene ethyl/polyoxypropyl propyl block copolymer, sorbitan fatty acid esters (for example, sorbitan monolaurate, sorbitan monopalmitate, monostearyl) Acid sorbitan ester, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, and polyoxyethyl sorbitan sorbitol fatty acid ester (For example, polyoxyethylene ethyl laurate sorbitan ester, polyoxyethylene ethyl palmitate sorbitan ester, polyoxyethylene ethyl monostearate sorbitan ester, polyoxyethylene A sorbitan ester of trioleic acid, polysorbate sorbitan ester of ethyl tristearate). One of the surfactants may be used alone or in combination. The surfactant is preferably used in an amount of from 0 to 2% by mass, more preferably from 0.0001 to 2% by mass, even more preferably from 0.0005 to 1% by mass, based on the photosensitive ray-ray or radiation-sensitive resin composition. The total solids content is correct (the total amount excludes the solvent). [8] Carboxylic acid gun The sensitized ray or radiant resin composition of the present invention may comprise a carboxylic acid gun. Examples of the carboxylic acid key include cerium carboxylate, cerium carboxylate, and ammonium carboxylate. In particular, the carboxylate is preferably an iodide salt or a phosphonium salt. Further, the carboxylate residue of the carboxylate used in the present invention does not contain an aromatic group and is preferably free from a carbon-carbon double bond. The anion moiety is preferably an alkylcarboxylate anion having a linear number of carbon atoms of 1 to 30 or a branch of -175 to 201033733, a monocyclic or polycyclic ring, and the alkoxide-containing carboxylate anion partially or completely substituted by fluorine. Better. The alkyl chain can include an oxygen atom. Thanks to this architecture, penetration of 22 nm or less is ensured, sensitivity and resolution are improved, and isolated/dense deviations and exposure edges are improved. Examples of the fluorine-substituted carboxylate anion include fluoroacetate, difluoroacetate, trifluoroacetate, pentafluoropropionate, heptafluorobutyrate, nonafluoropentanoate, perfluorododecane An acid salt, a perfluorotridecanoate, a perfluorocyclohexane carboxylate, and a 2,2-bistrifluoromethylpropionate anion. These carboxylate salts can be synthesized by reacting cesium hydroxide, iodine or ammonium and a carboxylic acid with silver oxide in a suitable solvent. The carboxylate content in the composition is usually from 0.1 to 20% by mass, and preferably from 0.5 to 10% by mass, more preferably from 1 to 7% by mass, based on the total solid content of the composition. . [9] A dissolution inhibiting compound having a molecular weight of 3,000 or less and capable of decomposing by an acid action to increase solubility in an alkali developer. The photosensitive radiation or radiation sensitive resin composition of the present invention may include a molecular weight of 3,000 or less. And a dissolution inhibiting compound which can be decomposed by an acid action to increase the solubility in an alkaline developer (hereinafter, referred to as "a dissolution inhibiting compound"). The dissolution inhibiting compound is preferably an alicyclic or aliphatic compound comprising an acid-decomposable group (such as the acid-decomposable group described in the SPIE meeting record '2724, 3 55 (1 996)). Cholic acid derivatives), so as not to reduce the penetration of light of 220 nm or shorter. Examples of the acid-decomposable group and the alicyclic structure are the same as those described above for the resin of the component -176-201033733 (A). In an example of exposing the sensitized ray or radiation sensitive resin composition of the present invention by KrF excimer laser or by electron beam irradiation, the composition includes a phenolic hydroxyl group of the phenol compound substituted by an acid-decomposable group The structure is preferred. The phenol compound is preferably a compound containing from 1 to 9 phenol skeletons, more preferably from 2 to 6 phenol skeletons. The solubility-inhibiting compound used in the present invention has a molecular weight of 3,000 or less, preferably from 300 to 3,000, more preferably from 500 to 2,500. The amount of the dissolution inhibiting compound to be added is preferably from 2 to 50% by mass, more preferably from 3 to 30% by mass, even more preferably from 5 to 10% by mass, based on the composition of the sensitizing ray or the radiation-sensitive resin. The total solids content is correct. Specific examples of the dissolution inhibiting compound are set forth below, but the present invention is not limited thereto.

[10]其它添加劑 若須要時,本發明之感光化射線或感放射線樹脂組成 物可進一步包括例如染料、塑化劑、光敏劑、光吸收劑及 用來加速溶解在顯影劑中的化合物(例如,具有分子量 1,000或較低的酚化合物,或含羧基的脂環族或脂肪族化合 -177- 201033733 物)。 該具有分子量1,000或較低的酚化合物可藉由熟習該 項技術者參考描述例如在JP-A-4-122938、 JP-A-2-28531、 美國專利4,916,210及歐洲專利219294中的方法容易地合 成》 該含羧基脂環族或脂肪族化合物的特定實施例包括 (但不限於)具有類固醇結構的羧酸衍生物(諸如膽酸、去氧 基膽酸及石膽酸)、金剛烷羧酸衍生物、金剛烷二羧酸、環 己烷羧酸及環己烷二羧酸。 @ [1 1 ]圖案形成方法 本發明亦關於一種使用本發明之感光化射線或感放射 線樹脂組成物形成的光阻薄膜。 再者,本發明之圖案形成方法包括沉浸曝光及顯影該 光阻薄膜的步驟。 從提高解析度的觀點來看,本發明之感光化射線或感 放射線樹脂組成物以膜厚30至250奈米使用較佳,從30 至200奈米更佳。此膜厚可藉由將在該感光化射線或感放 〇 射線樹脂組成物中的固體含量濃度設定至適當範圍,因此 授予適當黏度及提高塗布能力與薄膜形成性質而獲得。 在該感光化射線或感放射線樹脂組成物中的全部固體 含量濃度通常從1.0至10質量%,從1.0至8.0質量%較佳, 從1.0至6.0質量%更佳。 本發明之感光化射線或感放射線樹脂組成物藉由下列 方式使用:將上述組分溶解在預定的有機溶劑中(在上述描 -178- 201033733 述的混合溶劑中較佳),過濾該溶液,及將其塗布在如下的 預定載體上。該使用於過濾的過濾器爲聚四氟乙烯、聚乙 烯或耐綸製得、具有孔洞尺寸0.1微米或較小的過濾器較 佳,0.05微米或較小更佳,0.03微米或較小又更佳。 例如,當使用在製造精密積體電路元件時,藉由適當 的塗布方法(諸如離心塗布機或塗布機),將該感光化射線 或感放射線樹脂組成物塗布在此基材(例如,塗敷矽/二氧 化矽的基材)上,及乾燥以形成光阻薄膜。 Ο 以光化射線或輻射經由預定遮罩照射該光阻薄膜,然 後較佳經烘烤(加熱),接受顯影及沖洗,藉此可獲得好的 圖案。 該光化射線或輻射的實施例包括紅外光、可見光、紫 外光、遠紫外光、極紫外光、X射線及電子束,但是該輻 射爲波長250奈米或較短的遠紫外光較佳,220奈米或較 短更佳,從1至200奈米又更佳。其特定實施例包括KrF 準分子雷射光(248奈米)、ArF準分子雷射光(193奈米)、 © F2準分子雷射光(157奈米)、X射線及電子束,且ArF準分 子雷射光、?2準分子雷射光及EUV(13奈米)較佳。 附隨地,在本發明中,該輻射包括電磁波,諸如紫外 光及X射線。 在形成光阻薄膜前,可藉由塗布在該基材上預先提供 抗反射薄膜。 所使用的抗反射薄膜可爲無機薄膜型式,諸如鈦、二 氧化鈦、氮化鈦、氧化鉻、碳及非晶矽;或由光吸收劑及 -179- 201033733 聚合物材料組成的有機薄膜型式。至於該有機抗反射薄 膜’於此亦可使用可商業購得的有機抗反射薄膜,諸如由 布魯爾科學有限公司(Brewer Science, Inc.)製造的DUV30 系列及DUV-40系列,及由施普莉有限公司(Shipley Co.,[10] Other Additives The sensitized ray or radiation sensitive resin composition of the present invention may further include, for example, a dye, a plasticizer, a photosensitizer, a light absorbing agent, and a compound for accelerating dissolution in a developer, if necessary. , having a phenolic compound having a molecular weight of 1,000 or less, or a carboxy-containing alicyclic or aliphatic compound -177-201033733). The phenolic compound having a molecular weight of 1,000 or less can be described by those skilled in the art, for example, in JP-A-4-122938, JP-A-2-28531, U.S. Patent 4,916,210, and European Patent No. 219,294. The method is readily synthesized. Specific examples of the carboxyl group-containing alicyclic or aliphatic compound include, but are not limited to, carboxylic acid derivatives having a steroid structure (such as cholic acid, deoxycholic acid, and lithocholic acid), Adamantanecarboxylic acid derivative, adamantane dicarboxylic acid, cyclohexanecarboxylic acid, and cyclohexanedicarboxylic acid. @ [1 1 ] Pattern forming method The present invention also relates to a photoresist film formed using the sensitized ray or radiation sensitive resin composition of the present invention. Further, the pattern forming method of the present invention comprises the steps of immersing exposure and developing the photoresist film. The photosensitive ray or radiation absorbing resin composition of the present invention is preferably used in a film thickness of 30 to 250 nm from the viewpoint of improving the resolution, and more preferably from 30 to 200 nm. This film thickness can be obtained by setting the solid content concentration in the sensitized ray or the sensitizing ray ray resin composition to an appropriate range, thereby imparting appropriate viscosity and improving coating ability and film forming property. The total solid content concentration in the photosensitive ray or radiation sensitive resin composition is usually from 1.0 to 10% by mass, preferably from 1.0 to 8.0% by mass, more preferably from 1.0 to 6.0% by mass. The sensitized ray or radiation sensitive resin composition of the present invention is used by dissolving the above components in a predetermined organic solvent (preferably in the mixed solvent described in the above-mentioned -178-337337), and filtering the solution. And coating it on a predetermined carrier as follows. The filter for filtration is preferably made of polytetrafluoroethylene, polyethylene or nylon, preferably having a pore size of 0.1 μm or less, preferably 0.05 μm or less, 0.03 μm or less and more. good. For example, when a precision integrated circuit component is used, the sensitized ray or radiation sensitive resin composition is coated on the substrate by a suitable coating method such as a centrifugal coater or a coater (for example, coating) The ruthenium/ruthenium dioxide substrate is dried and dried to form a photoresist film.照射 The photoresist film is irradiated with actinic radiation or radiation through a predetermined mask, and then preferably baked (heated), subjected to development and rinsing, whereby a good pattern is obtained. Examples of the actinic ray or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-ray, and electron beam, but the radiation is preferably a far-ultraviolet light having a wavelength of 250 nm or shorter. 220 nm or shorter is better, from 1 to 200 nm and even better. Specific examples thereof include KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), ©F2 excimer laser light (157 nm), X-ray and electron beam, and ArF excimer thunder. Shooting light,? 2 excimer laser light and EUV (13 nm) are preferred. Incidentally, in the present invention, the radiation includes electromagnetic waves such as ultraviolet light and X-rays. An antireflection film may be provided in advance on the substrate by coating before forming the photoresist film. The antireflection film used may be an inorganic film type such as titanium, titanium oxide, titanium nitride, chromium oxide, carbon and amorphous germanium; or an organic thin film type composed of a light absorber and a polymer material of -179-201033733. As for the organic anti-reflective film, commercially available organic anti-reflective films such as DUV30 series and DUV-40 series manufactured by Brewer Science, Inc., and Lily Co., Ltd. (Shipley Co.,

Ltd·)製造的 AR-2、AR-3 及 AR-5。 在顯影步驟中,如下使用鹼性顯影劑。可使用於正光 阻組成物的鹼性顯影劑爲下列之鹼性水溶液:例如,無機 鹸,諸如氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸 鈉及氨水溶液;一級胺,諸如乙胺及正丙胺;二級胺,諸 0 如二乙胺及二正丁胺;三級胺,諸如三乙基胺及甲基二乙 基胺;醇胺,諸如二甲基乙醇胺及三乙醇胺;四級銨鹽, 諸如氫氧化四甲基銨及氫氧化四乙基銨;或環胺,諸如吡 咯及哌啶。 再者,此外可加入適當量的醇類及界面活性劑各者後 使用此鹼性顯影劑。 該鹼性顯影劑的鹼濃度通常從〇. 1至20質量%。 該鹼性顯影劑的pH通常從10.0至15.0。 〇 同樣地,此外可加入適當量的醇類及界面活性劑各者 後使用上述描述的鹼性水溶液。 至於該洗液,使用純水,且此外可加入適當量的界面 活性劑後使用該純水。 在顯影或沖洗後,可藉由超臨界流體處理來進行移除 黏附在該圖案上的顯影劑或洗液。 亦可在以光化射線或輻射照射時,藉由在光阻薄膜與 -180- 201033733 鏡片間裝塡具有折射率高於空氣的液體(沉浸媒質)來進行 曝光(沉浸曝光)。藉由此曝光’可提高解析度。所使用的 沉浸媒質可爲任何液體,只要其具有高於空氣的折射率, 但是純水較佳。 下列描述出在沉浸曝光中所使用的沉浸液體。 該沉浸液體爲可穿透在曝光波長下的光及具有儘可能 小的折射率溫度係數之液體較佳’以便減少投射在光阻薄 膜上的光學影像變形。特別是,當該曝光光源爲ArF準分 〇 子雷射(波長:193奈米)時’除了上述描述之觀點外’考慮 到容易可用度及容易運用性,使用水較佳。 再者,從可更提高折射率的觀點來看,亦可使用具有 折射率1 . 5或更大的媒質。此媒質可爲水溶液或有機溶劑。 在使用水作爲沉浸液體的實例中,爲了減低水的表面 張力及增加表面活性之目的,可加入小比率的添加劑(液 體),其中該添加劑不會溶解在晶圓上的光阻薄膜,同時僅 在鏡片元件的底面處之光學塗層上提供可忽略的效應。該 〇 添加劑爲具有折射率幾乎等於水之脂肪族醇較佳’及其特 定實施例包括甲醇、乙醇及異丙醇。藉由加入具有折射率 幾乎等於水的醇,甚至當在水中的醇組分蒸發及其含量濃 度改變時,可有利地將整體液體的折射率變化製成非常 小。另一方面,若交互混合對193奈米的光不透明之物質 或折射率與水大大不同的雜質時,此將招致投射在光阻薄 膜上的光學影像變形。因此,所使用的水爲蒸餾水較佳。 亦可使用藉由將蒸餾水進一步過濾過離子交換過濾器或其 -181- 201033733 類似物而獲得的純水。 水的電阻爲18.3MQcm或更大較佳,及TOC(總有機碳) 爲20 ppb或較少較佳。同樣地,該水接受除氣處理較佳。 可藉由增加沉浸液體的折射率來提高微影蝕刻性能。 從此觀點來看,可將用來增加折射率的添加劑加入至水, 或可使用氘水(D20)取代水。 爲了防止光阻薄膜與沉浸液體直接接觸,可在該沉浸 液體與該由本發明之感光化射線或感放射線樹脂組成物所 形成的光阻薄膜間提供略微可溶於沉浸液體之薄膜(於此 之後,有時指爲”表面覆蓋層”)。該表面覆蓋層所需要的功 能有對作爲光阻覆蓋層之塗層的適應性、對光化射線或輻 射(特別在193奈米下)之穿透度、及在沉浸液體中缺乏溶 解度。該表面覆蓋層不可與光阻混合且能均勻地塗布作爲 該光阻覆蓋層較佳。 考慮到對193奈米的光之穿透度,該表面覆蓋層爲不 大量包含芳香族的聚合物較佳,及其特定實施例包括烴聚 合物、丙烯酸酯聚合物、聚甲基丙烯酸、聚丙烯酸、聚乙 烯醚、含矽聚合物及含氟聚合物。上述描述的疏水性樹脂 (C)亦合適作爲該表面覆蓋層。若雜質從該表面覆蓋層溶解 出而進入沉浸液體中時,光學透鏡受污染。在此觀點中, 包含在該表面覆蓋層中的聚合物之殘餘的單體組分量較小 較佳。 在剝除表面覆蓋層時,可使用顯影劑或可分別地使用 離形劑。該離形劑爲較少滲透光阻薄膜的溶劑較佳。從該 -182- 201033733 剝落步驟可與該光阻薄膜的顯影步驟同步進行之觀點來 看,該表面覆蓋層可以鹼性顯影劑剝離較佳,及爲了能夠 以鹼性顯影劑剝除,該表面覆蓋層呈酸性較佳,但是考慮 到不與該光阻薄膜交互混合,該表面覆蓋層可爲中性或鹼 性。 隨著在該表面覆蓋層與該沉浸液體間之折射率無差 異,解析度提高。在使用水作爲在以 ArF準分子雷射(波 長:193奈米)曝光時的沉浸液體之實例中,該用於ArF沉 浸曝光的表面覆蓋層具有折射率接近沉浸液體之折射率較 佳。從將折射率製成接近沉浸液體的觀點來看,該表面覆 蓋層包含氟原子較佳。同樣地,考慮到穿透度及折射率, 該表面覆蓋層爲薄膜較佳。 該表面覆蓋層不可與光阻薄膜混合及進一步不可與沉 浸液體混合較佳。從此觀點來看,當該沉浸液體爲水時, 該表面覆蓋層溶劑爲略微可溶於使用在正光阻組成物之溶 劑及不溶於水的媒質較佳。再者,當該沉浸液體爲有機溶 劑時,該表面覆蓋層可溶於水或不溶於水。 實施例 本發明藉由參照實施例更詳細地描述在下列,但是本 發明之內容應該不解釋爲限制於此。 單體合成實施例1(化合物(4)之合成): 藉由描述在國際公告案號WO 07/037213,細則中的方 法來合成下列化合物(1)。 在35.00克的化合物(1)中,加入150.00克的水及進一 -183- 201033733 步加入27.30克的NaOH。在加熱及迴流條件下攪拌所獲得 的混合物9小時,藉由加入鹽酸將其製成酸性,然後以醋 酸乙酯萃取。結合及濃縮有機層,以獲得36.90克的化合 物(2)(產率:93%)。 1H-NMR(400 MHz,在(CD3)2CO 中): δ (ppm)=l .5 6- 1.5 9( 1 Η) > 1 . 6 8 - 1.7 2 ( 1 Η) > 2 . 1 3 - 2.1 5 (1 Η) > 2.13-2·47(2Η),3·49-3·51(1Η),3·68(1Η),4.45 -4.46( 1 Η)。 在20.00克的化合物(2)中,加入200毫升的CHC13及 進一步加入5 0.90克的1,1,1,3,3,3-六氟異丙基醇及30.00 克的4_二甲基胺基吡啶。攪拌所獲得的混合物,及在所產 生的溶液中加入22.00克的1-乙基-3-(3-二甲基胺基丙基) 碳二醯亞胺鹽酸。在攪拌3小時後,將該反應溶液加入至 500毫升的IN HC1及終止反應。進一步以IN HC1清洗該 有機層,然後以水清洗及濃縮,以獲得3 0 · 0 0克的化合物 (3)(產率:85%)。 1H-NMR(400 MHz , 在(CD3)2CO 中) : 5(ppm)=l .62(1H) 1.91-1,95(1Η) , 2.21-2.24(1 Η), 2·45-2.53(2Η),3·61-3·63(1Η),3.76(1Η),4.32-4.58(1Η), 6.46·6.53(1Η)。 在15.00克的化合物(3)中,加入300.00克的甲苯及進 一步加入3.70克的甲基丙烯酸與4.2〇克的對-甲苯磺酸單 水合物。迴流所獲得的混合物1 5小時,同時藉由共沸性移 除所產生的水。濃縮該反應溶液,及藉由管柱層析法純化 該濃縮物’以獲得1 1 · 7 0克的化合物(4 )(產率:6 5 %)。 -184 - 201033733 iH-NMRWOO MHz,在(CD3)2CO 中): 5(ppm)=l . 76- 1 .79(1 Η) , 1.93(3H) > 2.1 6 - 2.2 2 (2 Η) ’ 2.57-2.61(1Η) ♦ 2.7 6-2.8 1 (1 Η) > 3.7 3 - 3.7 4 ( 1 Η) > 4.73(1Η)-4.84-4.86(1Η) * 5.6 9 - 5.7 Ο (1 Η) > 6.12(1Η)> 6.5 Ο - 6.5 6 (1 Η) °AR-2, AR-3 and AR-5 manufactured by Ltd.). In the developing step, an alkaline developer is used as follows. The alkaline developer which can be used for the positive photoresist composition is an alkaline aqueous solution of, for example, inorganic hydrazine such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, and aqueous ammonia; primary amine , such as ethylamine and n-propylamine; secondary amines, such as diethylamine and di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcoholamines such as dimethylethanolamine and Triethanolamine; a quaternary ammonium salt such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; or a cyclic amine such as pyrrole and piperidine. Further, in addition, an alkaline developer may be used after adding an appropriate amount of an alcohol and a surfactant. The alkali concentration of the alkaline developer is usually from 0.1 to 20% by mass. The pH of the alkaline developer is usually from 10.0 to 15.0. Similarly, an aqueous alkaline solution described above may be used after adding an appropriate amount of an alcohol and a surfactant. As the washing liquid, pure water is used, and in addition, an appropriate amount of the surfactant may be added and the pure water may be used. After development or rinsing, the developer or lotion adhered to the pattern can be removed by supercritical fluid treatment. It is also possible to perform exposure (immersion exposure) by mounting a liquid having a higher refractive index than air (immersion medium) between the photoresist film and the lens of -180-201033733 when irradiated with actinic rays or radiation. By this exposure, the resolution can be improved. The immersion medium used may be any liquid as long as it has a refractive index higher than that of air, but pure water is preferred. The following describes the immersion liquid used in immersion exposure. The immersion liquid is preferably a liquid that can penetrate light at an exposure wavelength and a liquid having a refractive index temperature coefficient as small as possible to reduce optical image distortion projected on the photoresist film. In particular, when the exposure light source is an ArF quasi-divided laser (wavelength: 193 nm), 'in addition to the above-described description', it is preferable to use water in consideration of ease of availability and ease of use. Further, from the viewpoint of further increasing the refractive index, a medium having a refractive index of 1.5 or more can also be used. This medium can be an aqueous solution or an organic solvent. In the case of using water as the immersion liquid, a small ratio of the additive (liquid) may be added for the purpose of reducing the surface tension of the water and increasing the surface activity, wherein the additive does not dissolve the photoresist film on the wafer, and only A negligible effect is provided on the optical coating at the bottom surface of the lens element. The hydrazine additive is preferably an aliphatic alcohol having a refractive index almost equal to water' and specific examples thereof include methanol, ethanol and isopropanol. By adding an alcohol having a refractive index almost equal to water, even when the alcohol component in water evaporates and its content concentration changes, it is advantageous to make the refractive index change of the entire liquid very small. On the other hand, if the 193 nm light opaque substance or the impurity having a refractive index greatly different from that of water is alternately mixed, this will cause the optical image projected on the photoresist film to be deformed. Therefore, the water used is preferably distilled water. Pure water obtained by further filtering distilled water through an ion exchange filter or its -181-201033733 analog can also be used. The water resistance is preferably 18.3 MQcm or more, and the TOC (total organic carbon) is 20 ppb or less. Likewise, the water is preferably subjected to a degassing treatment. The lithographic etching performance can be improved by increasing the refractive index of the immersion liquid. From this point of view, an additive for increasing the refractive index may be added to the water, or water may be replaced with hydrophobic water (D20). In order to prevent direct contact between the photoresist film and the immersion liquid, a film slightly soluble in the immersion liquid may be provided between the immersion liquid and the photoresist film formed of the sensitized ray or radiation sensitive resin composition of the present invention (after this) , sometimes referred to as "surface overlay"). The functions required for the surface covering layer are adaptability to the coating as a photoresist coating, penetration to actinic rays or radiation (especially at 193 nm), and lack of solubility in the immersion liquid. The surface covering layer is not compatible with the photoresist and can be uniformly coated as the photoresist coating layer. Considering the penetration of light of 193 nm, the surface covering layer is preferably a polymer which does not contain a large amount of aromatics, and specific examples thereof include a hydrocarbon polymer, an acrylate polymer, a polymethacrylic acid, a poly Acrylic acid, polyvinyl ether, cerium-containing polymer and fluoropolymer. The hydrophobic resin (C) described above is also suitable as the surface covering layer. The optical lens is contaminated if impurities are dissolved from the surface covering layer into the immersion liquid. In this regard, the amount of the residual monomer component of the polymer contained in the surface covering layer is preferably small. When the surface covering layer is peeled off, a developer may be used or a release agent may be used separately. The release agent is preferably a solvent which is less permeable to the photoresist film. From the viewpoint that the peeling step of the -182 to 201033733 can be performed in synchronism with the developing step of the photoresist film, the surface covering layer can be preferably peeled off by an alkali developer, and in order to be peeled off by an alkali developer, the surface The cover layer is preferably acidic, but the surface cover layer may be neutral or basic in view of not intermixing with the photoresist film. As the refractive index between the surface covering layer and the immersion liquid is not different, the resolution is improved. In the case of using water as an immersion liquid upon exposure with an ArF excimer laser (wavelength: 193 nm), the surface covering layer for ArF immersion exposure has a refractive index close to that of an immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, the surface covering layer preferably contains a fluorine atom. Similarly, the surface covering layer is preferably a film in consideration of the transmittance and the refractive index. The surface covering layer may not be mixed with the photoresist film and further preferably not mixed with the immersion liquid. From this point of view, when the immersion liquid is water, the surface coating layer solvent is preferably a solvent which is slightly soluble in the positive photoresist composition and a water-insoluble medium. Further, when the immersion liquid is an organic solvent, the surface covering layer is soluble in water or insoluble in water. EXAMPLES The present invention is described in more detail below with reference to examples, but the contents of the present invention should not be construed as being limited thereto. Monomer Synthesis Example 1 (Synthesis of Compound (4)): The following compound (1) was synthesized by the method described in the International Publication No. WO 07/037213, the specification. In 35.00 g of the compound (1), 150.00 g of water was added and 27.93 g of NaOH was added in a step -183-201033733. The obtained mixture was stirred under heating and reflux for 9 hours, made acidic by the addition of hydrochloric acid, and then extracted with ethyl acetate. The organic layer was combined and concentrated to obtain 36.90 g of compound (2) (yield: 93%). 1H-NMR (400 MHz, in (CD3) 2CO): δ (ppm) = l. 5 6- 1.5 9 ( 1 Η) > 1 . 6 8 - 1.7 2 ( 1 Η) > 2 . 1 3 - 2.1 5 (1 Η) > 2.13-2·47(2Η), 3·49-3·51(1Η), 3.68(1Η), 4.45 -4.46( 1 Η). In 20.00 g of the compound (2), 200 ml of CHC13 was added, and further, 5.90 g of 1,1,1,3,3,3-hexafluoroisopropyl alcohol and 30.00 g of 4-dimethylamine were added. Pyridine. The obtained mixture was stirred, and 22.00 g of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride was added to the resulting solution. After stirring for 3 hours, the reaction solution was added to 500 ml of IN HC1 and the reaction was terminated. The organic layer was further washed with IN HCl, and then washed with water and concentrated to obtain 3 0·0 g of Compound (3) (yield: 85%). 1H-NMR (400 MHz, in (CD3)2CO): 5 (ppm) = 1.62 (1H) 1.91-1, 95 (1Η), 2.21-2.24 (1 Η), 2·45-2.53 (2Η) ), 3·61-3·63 (1Η), 3.76 (1Η), 4.32-4.58 (1Η), 6.46·6.53 (1Η). In 15.00 g of the compound (3), 300.00 g of toluene was added, and 3.70 g of methacrylic acid and 4.2 g of p-toluenesulfonic acid monohydrate were further added. The obtained mixture was refluxed for 15 hours while removing the produced water by azeotropy. The reaction solution was concentrated, and the concentrate was purified by column chromatography to obtain 1 1 · 70 g of Compound (4) (yield: 65 %). -184 - 201033733 iH-NMRWOO MHz, in (CD3)2CO): 5(ppm)=l . 76- 1.79(1 Η) , 1.93(3H) > 2.1 6 - 2.2 2 (2 Η) ' 2.57-2.61(1Η) ♦ 2.7 6-2.8 1 (1 Η) > 3.7 3 - 3.7 4 ( 1 Η) > 4.73(1Η)-4.84-4.86(1Η) * 5.6 9 - 5.7 Ο (1 Η) >6.12(1Η)> 6.5 Ο - 6.5 6 (1 Η) °

單體合成實施例2(化合物(8)之合成): 〇 在17.09克的羥乙酸甲酯(5)(由TCI製造)中’加入 3 0.00克的THF及進一步加入21.15克的三乙基胺。將所獲 得的混合物冷卻至〇°C,且此外逐滴加入2 0.8 5克的氯化甲 基丙烯酸。讓所產生的溶液返回室溫,攪拌2小時,及在 加入碳酸氫鈉水溶液後,以醋酸乙酯萃取。收集有機層, 且此外加入MgS04。過濾此混合物及濃縮,以獲得28.51 克的化合物(6)(產率:95%)。 !Η-ΝΜΚ(400 MHz , 在 (CD3)2CO 中 ) : 〇 6(ppm) = l .94-2.04(3H) ,3.7 1 - 3.7 2 (3 Η) ,4.73(2Η), 5.72(1Η),6.1 5(1Η)。 在28.5克的化合物(6)中,加入180毫升的丙酮。將所 得的混合物冷卻至〇°C及逐滴加入至1 80毫升的IN NaOH 水溶液。在攪拌30分鐘後,藉由加入鹽酸將該溶液製成酸 性,然後以醋酸乙酯萃取。收集有機層且此外加入Mg S04。 過瀘此混合物及濃縮,以獲得21.2克的化合物(7)(產率: 8 2%) ° -185- 201033733 1H-NMR(400 MHz , 在(CD3)2CO 中) : 5(ppm)=l .94- 1.97(3H) » 4.7 1 - 4.7 2 ( 2 H) > 5.7 0 - 5.7 1 (1 H) > 6·15(1 H)。 在15.00克的化合物(7)中,加入300克的甲苯及進一 步加入7.00克的化合物(3)與3.80克的對-甲苯磺酸單水合 物。迴流所獲得的混合物6小時,同時藉由共沸性移除所 產生的水。濃縮該反應溶液,及藉由管柱層析法純化該濃 縮物,以獲得13.52克的化合物(8)(產率:71%)。 1H-NMR(400 MHz , 在 (CD3)2CO 中 ) ·· 3(ppm)=l.77- 1.7 8 ( 1 H),1.9 5 - 1.96 (3Η),2·11-2·20(2Η), 2.56-2.61(1Η) , 2 _ 7 3 - 2.7 4 ( 1 Η) , 3.7 3 - 3.7 5 ( 1 Η), 4·77-4.82(4Η),5·74(1Η),6.16(1Η),6.52-6.5 3( 1 Η)。Monomer Synthesis Example 2 (Synthesis of Compound (8)): 〇In 17.09 g of methyl glycolate (5) (manufactured by TCI), '30.000 g of THF was added and 21.15 g of triethylamine was further added. . The obtained mixture was cooled to 〇 ° C, and further, 2 0.8 5 g of chlorinated methacrylic acid was added dropwise. The resulting solution was returned to room temperature, stirred for 2 hours, and extracted with ethyl acetate. The organic layer was collected and additionally MgS04 was added. This mixture was filtered and concentrated to give 28.51 g of Compound (6) (yield: 95%). !Η-ΝΜΚ (400 MHz, in (CD3)2CO): 〇6 (ppm) = l .94-2.04(3H) , 3.7 1 - 3.7 2 (3 Η) , 4.73 (2 Η), 5.72 (1 Η) , 6.1 5 (1Η). In 28.5 g of the compound (6), 180 ml of acetone was added. The resulting mixture was cooled to 〇 ° C and added dropwise to a solution of 1 80 mL of IN NaOH. After stirring for 30 minutes, the solution was made acidic by the addition of hydrochloric acid, and then extracted with ethyl acetate. The organic layer was collected and additionally Mg S04 was added. This mixture was concentrated and concentrated to obtain 21.2 g of the compound (7) (yield: 8 2%). -185-201033733 1H-NMR (400 MHz, in (CD3)2CO): 5 (ppm) = l .94- 1.97(3H) » 4.7 1 - 4.7 2 ( 2 H) > 5.7 0 - 5.7 1 (1 H) > 6·15(1 H). In 15.00 g of the compound (7), 300 g of toluene was added, and 7.00 g of the compound (3) and 3.80 g of p-toluenesulfonic acid monohydrate were further added. The obtained mixture was refluxed for 6 hours while removing water produced by azeotropy. The reaction solution was concentrated, and the concentrate was purified by column chromatography to afford 13.52 g of Compound (8) (yield: 71%). 1H-NMR (400 MHz, in (CD3)2CO) ·· 3 (ppm)=l.77- 1.7 8 ( 1 H), 1.9 5 - 1.96 (3Η), 2·11-2·20 (2Η) , 2.56-2.61(1Η) , 2 _ 7 3 - 2.7 4 ( 1 Η) , 3.7 3 - 3.7 5 ( 1 Η), 4·77-4.82 (4 Η), 5·74 (1 Η), 6.16 (1 Η) , 6.52 - 6.5 3 ( 1 Η).

單體合成實施例3(化合物(9)之合成): 使用與在單體合成實施例1中相同的方式來合成化合 物(9),除了使用2,2,3,3,4,4,4-七氟-1- 丁醇取代 1,1,1,3,3,3-六氟異丙基醇外(三個步驟的產率:30%)。 1 H-NMR(400 MHz ’ 在(CD3)2CO 中): -186 - 201033733 5(ppm)=l .73 - 1 .76(1 H) , 1.93(3H) > 2.1 3 - 2.1 7 ( 1 H) ’ 2.57-2.61(lH) , 2 · 7 1 - 2 · 7 2 (1 H ) , 2.7 7 - 2.8 1 (1 H) ’ 3·65-3·67(1Η),4.69(1H)’ 4.79-4·80(1Η),4.9 卜 5.00(2H), 5.68-5.69(1Η),6.1 1 - 6 · 1 2 (1 H )。Monomer Synthesis Example 3 (Synthesis of Compound (9)): Compound (9) was synthesized in the same manner as in Monomer Synthesis Example 1, except that 2, 2, 3, 3, 4, 4, 4 were used. - Heptafluoro-1-butanol was substituted for 1,1,1,3,3,3-hexafluoroisopropyl alcohol (yield in three steps: 30%). 1 H-NMR (400 MHz ' in (CD3) 2CO): -186 - 201033733 5 (ppm) = 1.73 - 1.76 (1 H) , 1.93 (3H) > 2.1 3 - 2.1 7 ( 1 H) ' 2.57-2.61(lH) , 2 · 7 1 - 2 · 7 2 (1 H ) , 2.7 7 - 2.8 1 (1 H) ' 3·65-3·67(1Η), 4.69(1H)' 4.79-4·80 (1Η), 4.9 5.00 (2H), 5.68-5.69 (1Η), 6.1 1 - 6 · 1 2 (1 H ).

O 單體合成實施例4(化合物(10)之合成): 使用與在單體合成實施例1中相同的方式來合成化合 物(10),除了使用ΙΗ,ΙΗ-十三氟-卜庚醇取代^1,1,3,3,3-六氟異丙基醇外(三個步驟的產率:4 2%)。 1H-NMR(400 MHz , 在(CD3)2C〇 中) 5(ppm) = l .73-1 ·88(1Η) , 1.93(3Η) , 2 · 〇 8 · 2 · 1 7 ( 1 Η) ’ 2.56-2.61(1Η) , 2.71 -2.72(1Η) , 2.7 7 - 2.8 1 (1 Η) ’ 3·66-3·68(1Η),4.69(1Η)’ 4.79-4.81(1Η),4.93-5.01(2Η), ❹ 5·68-5·69(1Η),6.1 1-6.12(1Η)。O Monomer Synthesis Example 4 (Synthesis of Compound (10)): Compound (10) was synthesized in the same manner as in Monomer Synthesis Example 1, except that hydrazine, decyl-trifluoro-p-heptanol was used. ^1,1,3,3,3-hexafluoroisopropyl alcohol (yield in three steps: 42%). 1H-NMR (400 MHz, in (CD3)2C〇) 5 (ppm) = l .73-1 ·88 (1Η) , 1.93 (3Η) , 2 · 〇8 · 2 · 1 7 ( 1 Η) ' 2.56-2.61(1Η) , 2.71 -2.72(1Η) , 2.7 7 - 2.8 1 (1 Η) ' 3·66-3·68(1Η), 4.69(1Η)' 4.79-4.81(1Η),4.93-5.01 (2Η), ❹ 5·68-5·69 (1Η), 6.1 1-6.12 (1Η).

單體合成實施例5(化合物(11)之合成): 使用與在單體合成實施例1中相同的方式來合成化合 物(11),除了使用2,3,5,6-四氟-4-(三氟甲基)酚取代 -187- 201033733 1,1,1,3,3,3-六氟異丙基醇外(三個步驟的產率:23%)。 1 H-NMR(4〇〇 MHz ’ 在(CD3)2CO 中): 5(ppm)=1.88-1.9l(lH) ’ 1.94(3H) , 2.1 0 - 2.2 8 (2 Η) ’ 2.66-2.71(1Η) * 2.80(1Η) > 3.9 2 - 3.9 3 ( 1 Η) - 4.77(1H) > 4.90-4.92(lH),5.70-5·71(1Η) ’ 6.13-6·14(1Η)。Monomer Synthesis Example 5 (Synthesis of Compound (11)): Compound (11) was synthesized in the same manner as in Monomer Synthesis Example 1, except that 2,3,5,6-tetrafluoro-4- was used. (Trifluoromethyl)phenol substituted -187-201033733 1,1,1,3,3,3-hexafluoroisopropyl alcohol (yield in three steps: 23%). 1 H-NMR (4 〇〇 MHz ' in (CD3) 2CO): 5 (ppm) = 1.88-1.9 l (lH) ' 1.94 (3H) , 2.1 0 - 2.2 8 (2 Η) ' 2.66-2.71 ( 1Η) * 2.80(1Η) > 3.9 2 - 3.9 3 ( 1 Η) - 4.77(1H) > 4.90-4.92(lH), 5.70-5·71(1Η) ' 6.13-6·14(1Η).

合成實施例1 :樹脂(C-8)之合成 在氮環境中,將6.4克的醋酸丙二醇單甲基醚酯 (PGMEA)充入三頸燒瓶中及加熱至80°C。於此,在4小時 內,逐滴加入一藉由將17·5克的化合物(1)、4.0克的化合 物(2)及比率 5.0莫耳%(以該單體爲準)的聚合起始劑 V-601(由和光純化學工業有限公司(Wako Pure Chemical Industries,Ltd.)製造)溶解在58.0克的PGM EA中所製備之 溶液。在完成逐滴加入後,在80°C下進一步進行該反應4 小時。讓所產生的反應溶液遺留靜置至冷卻,然後在20分 鐘內,將其逐滴加入至1,300克的甲醇/150克的蒸餾水之 混合溶液,及藉由過濾收集沉澱的粉末及乾燥,結果,獲 得15.2克的聚合物(C-8)。 所獲得的聚合物(C-8)之重量平均分子量爲8,0〇()(就標 準聚苯乙烯而論)及多分散性(Mw/Mn)爲1.3。 -188- 201033733Synthesis Example 1: Synthesis of Resin (C-8) Under a nitrogen atmosphere, 6.4 g of propylene glycol monomethyl ether acetate (PGMEA) was charged into a three-necked flask and heated to 80 °C. Here, within 4 hours, a polymerization initiation by adding 17.5 g of the compound (1), 4.0 g of the compound (2), and a ratio of 5.0 mol% (based on the monomer) was added dropwise. Agent V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) was dissolved in a solution prepared in 58.0 g of PGM EA. After completion of the dropwise addition, the reaction was further carried out at 80 ° C for 4 hours. The resulting reaction solution was left to stand until it was cooled, and then added dropwise to a mixed solution of 1,300 g of methanol/150 g of distilled water in 20 minutes, and the precipitated powder was collected by filtration and dried. As a result, 15.2 g of a polymer (C-8) was obtained. The obtained polymer (C-8) had a weight average molecular weight of 8,0 〇 (in terms of standard polystyrene) and a polydispersity (Mw/Mn) of 1.3. -188- 201033733

以相同方式合成顯示在上述表中的其它樹脂(c)。 合成實施例2 :樹脂(1)之合成 Q 在氮環境中,將8.6克的環己酮充入三頸燒瓶中及加 熱至80 °C。於此,在6小時內,逐滴加入藉由將9.8克的 甲基丙烯酸2-金剛烷基-異丙酯、4.4克的甲基丙烯酸二經 基金剛烷酯、8.9克的降萡烷內酯甲基丙烯酸酯及比率8 莫耳%(以該單體爲準)的聚合起始劑V-601 (由和光純化學 工業有限公司製造)溶解在79克的環己酮中所製備之溶 液。在完成逐滴加入後,在80°C下進一步進行該反應2小 時。讓所產生的反應溶液遺留靜置至冷卻,然後在20分鐘 Q 內’將其逐滴加入至800毫升的已烷/2 00毫升的醋酸乙酯 之混合溶液’及藉由過濾收集沉澱的粉末及乾燥,結果, 獲得19克的樹脂(1)。所獲得的樹脂之重量平均分子量爲 8,800(就標準聚苯乙烯而論)及多分散性(Mwmn)爲1.9。 以相同方式合成顯示在下列的其它樹脂(A)。 下列顯示出在實施例中所使用之可酸分解的樹脂(A) 之結構。同樣地,在每種樹脂中之重覆單元(從在結構式中 的左邊算起)的莫耳比率、重量平均分子量(Mw)及多分散性 (Mw/Mn)顯示在下列表中。 -189 - 201033733The other resin (c) shown in the above table was synthesized in the same manner. Synthesis Example 2: Synthesis of Resin (1) Q In a nitrogen atmosphere, 8.6 g of cyclohexanone was charged into a three-necked flask and heated to 80 °C. Here, within 6 hours, 9.8 g of 2-adamantyl-isopropyl methacrylate, 4.4 g of methacrylic acid di-m-cyclohexane, and 8.9 g of norbornane were added dropwise. Ester methacrylate and a ratio of 8 mol % (based on the monomer) of a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries Co., Ltd.) dissolved in 79 g of cyclohexanone . After completion of the dropwise addition, the reaction was further carried out at 80 ° C for 2 hours. The resulting reaction solution was left to stand until it was cooled, and then it was dropwise added to 800 ml of a mixed solution of hexane/200 ml of ethyl acetate in 20 minutes Q and the precipitated powder was collected by filtration. And dried, as a result, 19 g of a resin (1) was obtained. The obtained resin had a weight average molecular weight of 8,800 (in terms of standard polystyrene) and a polydispersity (Mwmn) of 1.9. The other resin (A) shown below was synthesized in the same manner. The structure of the acid-decomposable resin (A) used in the examples is shown below. Similarly, the molar ratio, weight average molecular weight (Mw), and polydispersity (Mw/Mn) of the repeating unit (from the left side in the structural formula) in each resin are shown in the following table. -189 - 201033733

-190- (11)201033733-190- (11)201033733

(13)(13)

(14)(14)

-191- 201033733-191- 201033733

表2 樹脂(A) 組成物 Mw Mw/Mn (1) 50/10/40 8800 1.9 (2) 40/20/40 7000 1.6 (3) 40/10/35/5/10 10000 1.7 (4) 40/10/40/10 11000 1.8 (5) 40/15/20/25 8500 1.6 ⑹ 10/40/25/25 12000 1.8 ⑺ 50/20/30 6500 1.6 (B) 40/10/50 8000 1.7 (9) 25/25/50 9000 1.8 (10) 50/10/40 11000 1.8 (Π) 50/10/40 8000 1.7 樹脂(A) 組成物 Mw Mw/Mn (12) 40/10/40/10 7000 1.7 (13) 20/15/35/30 10000 i·7 If (14) 45/10/35/10 8500 1.7 (15) 50/40/10 10000 1.6 (16) 10/40/40/10 9000 1.8 (17) 55/10/35 12000 1.8 (18) 40/15/20/25 9000 1.7 (19) 15/30/10/28/17 10000 1.7 (20) 40/10/32.5/17.5 9200 1.8 (21) 40/10/30/20 8500 1.7 -192- 201033733 <光阻之製備> 將顯示在下列表中的組分溶解於溶劑中,以製備一具 有固體含量濃度5質量%之溶液,及讓所獲得的溶液過濾 過具有孔洞尺寸0.1微米之聚乙烯過濾器,以製備一正光 阻組成物。藉由下列方法評估所製備的正光阻組成物,及 結果顯示在表中。在表中,在"樹脂(2克)"中的樹脂意謂著 樹脂(A)。 <影像性能測試> © [曝光條件:ArF沉浸曝光] 在直徑12英吋的矽晶圓上塗布一有機抗反射薄膜 (ARC29A,由日產化學工業有限公司(Nissan Chemical Industries,Ltd.)製造),及在205 °C下烘烤60秒,以形成 98奈米厚的抗反射薄膜,及在上面塗布上述製備的正光阻 組成物及在120 °C下烘烤60秒,以形成120奈米厚的光阻 薄膜。經由具有線寬75奈米之1: 1線與間隔圖案的6%半 色調遮罩,藉由使用 ArF準分子雷射沉浸掃瞄器 Q (XT1250i,由ASML製造,NA: 0.85)來曝光所獲得的晶圓》 至於該沉浸液體,使用超純水。之後,在120°C下加熱該 晶圓60秒,以氫氧化四甲基銨水溶液(2.38質量%)顯影30 秒,以純水沖洗及旋乾,以獲得光阻圖案。 [線條邊緣粗糙度(LER)] 關於在具有線寬75奈米之1: 1線與間隔圖案的縱方 向中的 5微米邊緣範圍,藉由臨界尺寸(Critical Dimension)SEM(S-8840,由日立有限公司(Hitachi Ltd·)製 -193- 201033733 造)’在50點處測量離邊緣應該顯現的參考線條之距離, 及在決定標準偏差之後,計算3 σ。當該値(奈米)少於5.0 時,該樣品的等級A ;當從5.0至少於7.0時,等級Β ;及 當7.0或更大時,等級C。値較小指示出性能較高。 [浮渣] 使用掃描式電子顯微鏡(S-4800,由日立有限公司製造) 來觀察在具有線寬75奈米的光阻圖案中之顯影殘餘物(浮 渣),及當根本不產生浮渣時,該樣品的等級A ;當強烈地 產生浮渣時,等級D ;及當浮渣程度於此之間時,等級B 或C。 [顯影缺陷之評估] 使用由KLA天克有限公司(1〇^!^11〇〇1*1^(1.)所製造之 缺陷檢驗裝置(KL A 2360(商品名稱)’藉由將該缺陷檢驗裝 置之畫素尺寸設定爲0.16微米及閾値設定爲20,以隨機模 式進行測量,以便偵測從當疊置畫素單元與參考影像時所 產生的差異所提取之顯影缺陷。計算每單位面積(1平方公 分)的顯影缺陷數目。當該値少於〇.5時’該樣品的等級A ; 當從0.5至少於0.7時,等級B;當從〇·7至少於1.0時, 等級C ;及當1 · 〇或更大時’等級D °値較小指示出性能較 高。 [氣泡缺陷] 在直徑12英吋的矽晶圓上塗布有機抗反射薄膜 (ARC29A,由日產化學工業有限公司製造)’及在2〇5°C下 烘烤60秒,以形成78奈米厚的抗反射薄膜’及在上面塗 -194- 201033733 布上述製備的正光阻組成物,及在加熱板上於120 °c下加 熱及乾燥60秒,以形成100奈米厚的光阻薄膜。 經由具有線寬75奈米之1 : 1線與間隔圖案的6%半色 調遮罩,使用 ArF準分子雷射沉浸掃瞄器(XT 1 2 5 0i,由 ASML製造,NA: 0.85)來曝光所獲得的晶圓。 至於該沉浸液體,使用超純水。 之後,在加熱板上於Π 〇°C下加熱該晶圓60秒’進~ 步在2 3 °C下以具有濃度2.3 8質量%的氫氧化四甲基銨水溶 0 液顯影60秒,以純水沖洗40秒’然後乾燥,以獲得光阻 圖案。 藉由裝置KLA2 3 60(由KLA天克有限公司製造)來測量 從而獲得的樣品晶圓之顯影缺陷數目。 使用由日立有限公司所製造的臨界尺寸SEMS9380來 觀察所偵測之顯影缺陷部分,及測量氣泡缺陷數目。 當氣泡缺陷數目爲〇/平方公分時’該樣品的等級A ; 當從多於〇至0.01/平方公分或較少時’等級B;當從多於 〇 0.01至0.1/平方公分時,等級C;及當多於0.1/平方公分 時,等級D。 [圖案外形] 觀察使用與在氣泡缺陷評估中相同方式所形成之85 奈米的分離圖案,及當該圖案外形爲矩形時,該樣品的等 級A;當幾乎矩形時,等級B;當稍微成錐形時,等級C; 及當產生薄膜遺失時,等級D。 <其它性能之測試> -195- 201033733 [所產生的酸之溶析量] 將所製備的正光阻組成物塗布在直徑8英吋的矽晶圓 上及在120 °C下烘烤60秒,以形成160奈米厚的光阻薄膜。 隨後,使用 ArF準分子雷射曝光機器(PAS5500/ 1 1 〇0,由 ASML製造),在30毫焦耳/平方公分下曝光8英吋晶圓的 全部表面。將該晶圓浸泡此外在已加入100毫升、已使用 超純水產生裝置(米里(Milli)-Q,由日本米里坡(股)(Nihon MilliporeK.K.)製造)去離子化的純水之石英容器中,及收 集已溶析進入水中的物質。藉由LC-MS定量地測量此酸溶 析進入水溶液中的量。 LC裝置:2695由瓦特斯(Waters)製造 MS裝置:艾斯奎爾(esquire) 3000,由布魯克道耳吞尼 克斯(Brucker Daltonics)製造 藉由LC-MS裝置來測量具有質量299的離子物種(與 九氟丁基磺酸鹽陰離子相應)之偵測強度,及計算九氟丁烷 磺酸的溶析量。亦使用相同方式來計算其它陰離子的溶析 量。當溶析量爲1.0 χιό-1 Q莫耳/平方公分/秒或更多時’該 樣品的等級c;當從ι·〇χΐ(τ12莫耳/平方公分/秒至少於 ι.〇χΐο·1ϋ莫耳/平方公分/秒時,等級β;及當少於ι·〇χ w12 莫耳/平方公分/秒時,等級Α。 [後退接觸角] 將所製備的正光阻組成物塗布在直徑8英吋的砍晶圓 上及在1 2 0。(:下烘烤6 0秒,以形成1 6 0奈米厚的光阻薄膜。 在室溫23 ±3 X:及濕度45±5 %下,使用動態接觸角計量器(由 -196- 201033733 協和界面科學有限公司(Kyowa Interface Science Co.,Ltd.) 製造)’藉由膨脹-收縮方法來測量水滴的後退接觸角。以 速率6微升/秒吸入具有35微升的起始小滴尺寸之小滴5 秒’及採用當該動態接觸角在吸入期間穩定時的値作爲該 後退接觸角。當此後退接觸角的數値較大時,水可在較高 速度下追隨該掃描。 [顆粒(時效穩定性)] 關於上述製備的正光阻組成物,藉由里翁股份有限公 〇 司(RION Co.,Ltd·)所製造的顆粒計數器來計數於緊接在製 備後之溶液中的顆粒數目(顆粒起始値)及在溶液在4°C下 靜置1星期後之顆粒數目(在時效後的顆粒數目),並測量 藉由(在時效後之顆粒數目)-(顆粒起始値)所計算的顆粒數 目增加。於此,計數包含在1毫升溶液中之具有顆粒直徑 0.25微米或更大的顆粒。 當顆粒數目增加爲0.2顆粒/毫升或較少時,該樣品的等 級A;當從多於0.2顆粒/毫升至1/毫升時,等級B;當從 〇 多於1顆粒/毫升至5顆粒/毫升時,等級C;及當多於5頼 粒/毫升時,等級D。 -197- 評估結果 氣泡缺 陷 < < < < < < < < c < < <c < < < < < < < < < < < < < u 〇 CQ o 圖案外 形 < < < < < < < < < < < < < < < < < < < < < < < < < CQ 0Q 03 m 顆粒 C0 0Q CQ 0Q PQ 03 CQ 0Q m CQ ca CQ CQ ca m QQ CQ CQ ca QQ CQ 0Q CQ < < < < < 後退接觸角 (度) Ο R vn in 〇 vn S S VO R vn vn Ϊ0 o VQ S S VQ 1^1 〇 S 酸的溶 析董 < < < < < < < < < < < < < < < < < < < < < < < < < 0Q < < < 顯影缺 陷 CQ < PQ CQ < < DQ < < 0Q CQ < < CQ CQ < QQ CO < PQ < CO < QQ 0Q CQ < < < 浮渣 < < < < < < < < < < < PQ < 〇 < < < < < < < < < < < < < < < LER < < < < < < < < < < < < < c < < < < < < < < < < < < < < < 光阻組成物 界面活性劑(毫 克) W-4(2) W-K3) W-K3) W-3⑶ W-6(3) W-5(4) W-l(4) W-6(4) i W-3(3)丨 W-4(2) W-4⑵ W-4(2) W-4⑵ 1 W-4 ⑵ \ W-6(3) W-6(2) W-6(2) W-6⑵ W-6⑵ W-6(2) W*6⑵ W-4(2) W-l/W-4(l/l) W-4⑵ W-5(2) W-2⑶ W-4(2) W-4(2) W-4⑵ 樹脂(〇/(〇>)(毫克) C-7(80) C-8(80) C-72(80) C-l(40) C-6(80) C-9(80) C-50(40) | 0-56(80) CM 2(50) C-14(80) 072(80) C-7(160) C-7(80) C-7{240) C-19K80) i C-6(80) C-9(80) 0212(80) 1 C-209/CP-75(80/8) C-237(80) C-232(80) C-7/CP-75(75/5) C-8(80) C-7(80) C-2(XX80) C-l 55(80) 0155(80) C-172(80) G155/CP-23(40/40) 麯性化合物淹 克) N-5/N-K7/7) Ν-5⑺ N-3(6) N-6(10) N‘3⑹ N-6(10) N-l(7) ! N-4(I3) | N-2(9) N-5/N-1W) N-5/N-K7/7) N-5/N-K7/7) N-5/N-ia/7) N-5/N-K7/7) N-7⑺ N-3(10) N-3(10) _0) 1 N-3/N-8C7/7) 1 N-3/N-8(7/7) N-3/N-8W) N-5/N-K7/7) N-5(7) N-5/N-H7A7) N-l(IO) N-3⑹ N-5/N-U7") N-5/N-K7/7) N-5/N-K7/7) 溶劑(比率,以質置計) SL-2/SL-4 60/40 SL-4/SL-2 40/60 SL-4/SL-2 40/60 SL-^M/SL-G 40/59/1 SL-2/SL-4 70/30 SL-3/SL-4 30^70 SL-^L^/SL-S 40/58/2 SL-I/SL-2 60/40 SL-2^L-4/SL-6 40/59/1 丨 SL-2/SL-4 60/40 丨 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 1 SL-4ySL-2 40/60 | SL-2/SL-4 70/30 ! SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-4/SL-2 40/60 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-l/SL-2 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 光酸產生劑(亳克) z38(100) ζ55(90) Y-7(100) z55(100) z2(100) Y-3(100) 280(100) z66(100) I 767(100) ] Z66/Y-65(60/40) z66(100) z66(100) z66(100) z66(100) z46(90) Y-l(lOO) PAG24(100) z55(100) i- 1 z80/z66(50/50) 1 PAG 丨 6(100) z80/266(5Q/50) z38(100) z55(90) Z38(100) Y-l(lOO) zl(lOO) z66(100) z66(100) z66(100) 樹脂(2 克) —1 卜 〇0 二 2 12 QO — \r\ V*» w-l OO OO 寸 1-1 VI 1/5(1/1) tj- vn vn 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 實施例8 1 實施例9 i 1實施例 1實施例li 實施例12 實施例13 實施例14 實施例15 實施例16 實施例17 實施例18 實施例19 實施例20 實施例21 實施例22 實施例23 實施例24 實施例25 實施例26 實施例27 賁施例28 I實施例29 1 201033733 -i m ° e 瓤璀)m* i 1Table 2 Resin (A) Composition Mw Mw/Mn (1) 50/10/40 8800 1.9 (2) 40/20/40 7000 1.6 (3) 40/10/35/5/10 10000 1.7 (4) 40 /10/40/10 11000 1.8 (5) 40/15/20/25 8500 1.6 (6) 10/40/25/25 12000 1.8 (7) 50/20/30 6500 1.6 (B) 40/10/50 8000 1.7 (9 25/25/50 9000 1.8 (10) 50/10/40 11000 1.8 (Π) 50/10/40 8000 1.7 Resin (A) Composition Mw Mw/Mn (12) 40/10/40/10 7000 1.7 (13) 20/15/35/30 10000 i·7 If (14) 45/10/35/10 8500 1.7 (15) 50/40/10 10000 1.6 (16) 10/40/40/10 9000 1.8 ( 17) 55/10/35 12000 1.8 (18) 40/15/20/25 9000 1.7 (19) 15/30/10/28/17 10000 1.7 (20) 40/10/32.5/17.5 9200 1.8 (21) 40/10/30/20 8500 1.7 -192- 201033733 <Preparation of photoresist> The components shown in the following list are dissolved in a solvent to prepare a solution having a solid content concentration of 5% by mass, and The obtained solution was filtered through a polyethylene filter having a pore size of 0.1 μm to prepare a positive photoresist composition. The prepared positive photoresist composition was evaluated by the following method, and the results are shown in the table. In the table, the resin in "resin (2g)" means resin (A). <Image Performance Test> © [Exposure Condition: ArF Immersion Exposure] An organic anti-reflection film (ARC29A, manufactured by Nissan Chemical Industries, Ltd.) was coated on a 12-inch diameter silicon wafer. And baking at 205 ° C for 60 seconds to form a 98 nm thick anti-reflective film, and coating the positive photoresist composition prepared above and baking at 120 ° C for 60 seconds to form 120 Nai A thick photoresist film. Exposure was performed by using a 6% halftone mask with a line width of 75 nm and a spacing pattern of 5% by using an ArF excimer laser immersion scanner Q (XT1250i, manufactured by ASML, NA: 0.85) Obtained wafers As for the immersion liquid, ultrapure water is used. Thereafter, the wafer was heated at 120 ° C for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38 mass%) for 30 seconds, rinsed with pure water and spin dried to obtain a photoresist pattern. [Line Edge Roughness (LER)] Regarding the 5 μm edge range in the longitudinal direction of the 1:1 line and the spacer pattern having a line width of 75 nm, by a Critical Dimension SEM (S-8840, Hitachi Ltd. (193-201033733) "Measures the distance from the reference line that should appear from the edge at 50 o'clock, and calculates 3 σ after determining the standard deviation. When the 値 (nano) is less than 5.0, the grade A of the sample; when it is at least 7.0 from 5.0, the grade Β; and when it is 7.0 or more, the grade C. A small size indicates a higher performance. [Scum] A scanning electron microscope (S-4800, manufactured by Hitachi, Ltd.) was used to observe development residue (scum) in a resist pattern having a line width of 75 nm, and when no scum was generated at all The grade A of the sample; grade D when the scum is strongly produced; and grade B or C when the scum level is between. [Evaluation of development defect] Using the defect inspection device (KL A 2360 (trade name)' manufactured by KLA Tianke Co., Ltd. (1〇^!^11〇〇1*1^(1.)] The pixel size of the inspection device is set to 0.16 μm and the threshold is set to 20, and the measurement is performed in a random mode to detect development defects extracted from the difference when the superimposed pixel unit and the reference image are generated. (1 square centimeter) of the number of development defects. When the 値 is less than 〇5, 'the grade A of the sample; when it is from 0.5 at least 0.7, grade B; when from 〇7 to at least 1.0, grade C; And when 1 · 〇 or greater, the lower level D ° 指示 indicates higher performance. [Bubble Defect] Coated organic anti-reflective film (ARC29A) on a 12-inch diameter 矽 wafer, by Nissan Chemical Industry Co., Ltd. Manufactured] and baked at 2 〇 5 ° C for 60 seconds to form a 78 nm thick anti-reflective film 'and coated with a positive photoresist composition prepared above - 194-201033733, and on a hot plate Heating and drying at 120 ° C for 60 seconds to form a 100 nm thick photoresist film. Line width 75 nm 1: 6% halftone mask with 1 line and spacer pattern, obtained using an ArF excimer laser immersion scanner (XT 1 2 5 0i, manufactured by ASML, NA: 0.85) For the immersion liquid, ultrapure water is used. Thereafter, the wafer is heated on a hot plate at Π ° C for 60 seconds ' at a step of 2 3 ° C to have a concentration of 2.3 8 mass % The tetramethylammonium hydroxide aqueous solution was developed for 60 seconds, rinsed with pure water for 40 seconds, and then dried to obtain a photoresist pattern. The sample obtained by measuring KLA2 3 60 (manufactured by KLA Sky Co., Ltd.) was used. Number of development defects of the wafer. The critical dimension SEMS9380 manufactured by Hitachi, Ltd. was used to observe the detected defective portion of the defect, and the number of bubble defects was measured. When the number of bubble defects was 〇/cm 2 'the grade A of the sample Level B when more than 〇 to 0.01/cm 2 or less; level C when more than 〇0.01 to 0.1/cm 2 ; and level D when more than 0.1/cm 2 . Shape] Observed use is formed in the same way as in bubble defect assessment a separation pattern of 85 nm, and a grade A of the sample when the shape of the pattern is rectangular; a grade B when almost rectangular; a grade C when slightly tapered; and a grade D when a film is missing <Test of other properties> -195-201033733 [Amount of acid produced by dissolution] The prepared positive photoresist composition was coated on a 8 inch diameter tantalum wafer and baked at 120 °C. 60 seconds to form a 160 nm thick photoresist film. Subsequently, the entire surface of the 8-inch wafer was exposed at 30 mJ/cm 2 using an ArF excimer laser exposure machine (PAS 5500/1 1 〇0, manufactured by ASML). The wafer was immersed in addition to the pure deionization of 100 ml of ultrapure water generating device (Milli-Q, manufactured by Nihon Millipore K.K.). In the quartz container of water, and collecting the substances that have been dissolved into the water. The amount of this acid solution into the aqueous solution was quantitatively measured by LC-MS. LC device: 2695 MS device manufactured by Waters: esquire 3000, manufactured by Brucker Daltonics to measure ionic species with mass 299 by LC-MS device ( The detection intensity corresponding to the nonafluorobutanesulfonate anion), and the amount of segregation of nonafluorobutanesulfonic acid. The same method was also used to calculate the amount of elution of other anions. When the amount of dissolution is 1.0 χιό-1 Q mol/cm 2 /s or more, the grade c of the sample; when from ι·〇χΐ (τ12 mol/cm 2 / sec at least ι.〇χΐο· 1 ϋ mol / cm ^ 2 / sec, grade β; and when less than ι · 〇χ w12 mol / cm ^ 2 / sec, grade Α. [Reverse contact angle] The prepared positive photoresist composition is coated in diameter 8 inches on the chopped wafer and at 1 2 0. (: Bake for 60 seconds to form a 160 mm thick photoresist film. 23 ± 3 X at room temperature: and 45 ± 5 % humidity Next, a dynamic contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) was used to measure the receding contact angle of water droplets by an expansion-contraction method at a rate of 6 μm. Liters per second inhalation of droplets having a starting droplet size of 35 microliters for 5 seconds' and using the enthalpy when the dynamic contact angle is stable during inhalation as the receding contact angle. When the number of receding contact angles is large At this time, water can follow the scan at a higher speed. [Particles (Aging Stability)] With respect to the positive photoresist composition prepared above, A particle counter manufactured by RION Co., Ltd. to count the number of particles in the solution immediately after preparation (particle starting enthalpy) and to stand in the solution at 4 ° C The number of particles after 1 week (the number of particles after aging), and the increase in the number of particles calculated by (number of particles after aging) - (particle starting enthalpy) is measured. Here, the count is contained in 1 ml of solution. a particle having a particle diameter of 0.25 μm or more. When the number of particles is increased to 0.2 particles/ml or less, the grade A of the sample; when from more than 0.2 particles/ml to 1/ml, grade B; Grade C when more than 1 granule/ml to 5 granules/ml from 〇; and grade D when more than 5 granules/ml. -197- Evaluation result bubble defect <<<<<<<< c <<<c<<<<<<<<<<<<<<<<<<<<<<<<<<<><<<<<<<<<<<<<<<<<<<<<<<<<<<<> One C0 0Q CQ 0Q PQ 03 CQ 0Q m CQ ca CQ CQ ca m QQ CQ CQ ca QQ CQ 0Q CQ <<<<< Back contact angle (degrees) Ο R vn in 〇vn SS VO R vn vn Ϊ0 o VQ SS VQ 1^1 溶S acid soluble Dong <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<><<<>><<>< PQ < CO < QQ 0Q CQ <<< scum <<<<<<<<<<<<<<<<<<<<;<<<<<<<<<<<<<<<<<<<<<<<<<<< c <<<<<<<<<<<<<<<<<<<<<<<<<<> -K3) W-K3) W-3(3) W-6(3) W-5(4) Wl(4) W-6(4) i W-3(3)丨W-4(2) W-4(2) W -4(2) W-4(2) 1 W-4 (2) \ W-6(3) W-6(2) W-6(2) W-6(2) W-6(2) W-6(2) W*6(2) W-4 (2) Wl/W-4(l/l) W-4 W-5(2) W-2(3) W-4(2) W-4(2) W-4(2) Resin (〇/(〇>)(mg) C-7(80) C-8(80) C- 72(80) Cl(40) C-6(80) C-9(80) C-50(40) | 0-56(80) CM 2(50) C-14(80) 072(80) C- 7(160) C-7(80) C-7{240) C-19K80) i C-6(80) C-9(80) 0212(80) 1 C-209/CP-75(80/8) C-237(80) C-232(80) C-7/CP-75(75/5) C-8(80) C-7(80) C-2(XX80) Cl 55(80) 0155(80 ) C-172(80) G155/CP-23(40/40) Curved compound flooded) N-5/N-K7/7) Ν-5(7) N-3(6) N-6(10) N' 3(6) N-6(10) Nl(7) ! N-4(I3) | N-2(9) N-5/N-1W) N-5/N-K7/7) N-5/N-K7 /7) N-5/N-ia/7) N-5/N-K7/7) N-7(7) N-3(10) N-3(10) _0) 1 N-3/N-8C7/7 ) 1 N-3/N-8(7/7) N-3/N-8W) N-5/N-K7/7) N-5(7) N-5/N-H7A7) Nl(IO) N-3(6) N-5/N-U7") N-5/N-K7/7) N-5/N-K7/7) Solvent (ratio, by mass) SL-2/SL-4 60/ 40 SL-4/SL-2 40/60 SL-4/SL-2 40/60 SL-^M/SL-G 40/59/1 SL-2/SL-4 70/30 SL-3/SL- 4 30^70 SL-^L^/SL-S 40/58/2 SL-I/SL-2 60/40 SL-2^L-4/SL-6 40/59/1 丨SL-2/SL -4 60/40 丨SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 1 SL-4ySL -2 40/60 | SL-2/SL-4 70/30 ! SL-2/SL-4 60 /40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60 /40 SL-4/SL-2 40/60 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-l/SL-2 60/40 SL-2/SL-4 60 /40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 Photoacid generator (gram) z38(100) ζ55(90) Y-7(100) z55(100) z2( 100) Y-3(100) 280(100) z66(100) I 767(100) ] Z66/Y-65(60/40) z66(100) z66(100) z66(100) z66(100) z46( 90) Yl(lOO) PAG24(100) z55(100) i- 1 z80/z66(50/50) 1 PAG 丨6(100) z80/266(5Q/50) z38(100) z55(90) Z38( 100) Yl(lOO) zl(lOO) z66(100) z66(100) z66(100) Resin (2g) —1 Buddy 0 2 2 12 QO — \r\ V*» wl OO OO inch 1-1 VI 1/5(1/1) tj- vn vn Embodiment 1 Embodiment 2 Embodiment 3 Embodiment 4 Embodiment 5 Embodiment 6 Embodiment 7 Embodiment 8 1 Embodiment 9 i 1 Embodiment 1 Embodiment li Implementation Example 12 Example 13 Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 Example 25 Example 26 Example 27 Example 28 I embodiment 29 1 201033733 -im ° e 瓤璀)m* i 1

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s震 K -i 6£i owi *«)£* 評估結果 氣泡缺 陷 Q Q 〇 Q Ο u Q u o u 圖案外 形 Q Q 〇 Q Q u Q u u u 顆粒 Q Q U Q Q u Q o o u 後退接觸角 渡) S VQ S JO vn vn o 酸的溶 析量 U U CQ U 03 < CQ PQ < < 顯影缺 陷 〇 U U Q U o U U CQ m 浮渣i _I Q Q Q Q Q OQ Q D QQ m LER 〇 03 CJ CJ 〇 < U 〇 < < 光随成物 界面活性劑(毫克) W-4(2) i W-4⑵ W-4⑵ W-4⑵ W-2(3) W-2(3) W-4(3) W-4(3) W-6⑵ W-6(2) 樹脂 (〇/(CP)(毫克) * H-K80) Η-2(80) H-3(80) H-2(80) H-4(80) H-5(80) !聚合物2(80) 聚潍4(80) 鹺性化合物(毫克): 1 ________J N-5/N-K7 ⑺ N-5/N-K7") Ν-5/Ν-Κ7/7) N-5/N-K7") N-3⑹ N-3⑹ N-5/N-K7/7) N-5/N-l(7") N-8(10) N-3/N-8(7/7) 溶劑(比率’以質量 計) SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-l/SL-2 60/40 SL-l/SL-2 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 i- SL-2/SL-4 60/40 光酸產生劑(毫克) z66(100) z80(100) ζ66(100) z66(100) z80(110) z80(110) z66(110) 1 266(110) 1 z55(100) PAG16(100) 樹脂(2 . 克) vn w-» S 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 比較例9 比較例10 661 201033733 在表中的意義如下。 該酸產生劑及樹脂(C)與上述作爲實施例的那些闡明 相應。s shock K -i 6£i owi *«)£* Evaluation result Bubble defect QQ 〇Q Ο u Q uou Pattern shape QQ 〇QQ u Q uuu Particle QQUQQ u Q oou Back contact angle crossing) S VQ S JO vn vn o Acid elution amount UU CQ U 03 < CQ PQ << development defect 〇UUQU o UU CQ m scum i _I QQQQQ OQ QD QQ m LER 〇03 CJ CJ 〇< U 〇<< Synthetic surfactant (mg) W-4(2) i W-4(2) W-4(2) W-4(2) W-2(3) W-2(3) W-4(3) W-4(3) W- 6(2) W-6(2) Resin (〇/(CP)(mg) * H-K80) Η-2(80) H-3(80) H-2(80) H-4(80) H-5( 80) !Polymer 2 (80) Poly 4 (80) Inert Compound (mg): 1 ________J N-5/N-K7 (7) N-5/N-K7") Ν-5/Ν-Κ7/7 N-5/N-K7") N-3(6) N-3(6) N-5/N-K7/7) N-5/Nl(7") N-8(10) N-3/N-8(7 /7) Solvent (ratio 'by mass) SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/ 40 SL-l/SL-2 60/40 SL-l/SL-2 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/40 SL-2/SL-4 60/ 40 i- SL-2/SL-4 60/40 Photoacid generator (mg) z66(100) z80(100) ζ66(100) z66(100) Z80(110) z80(110) z66(110) 1 266(110) 1 z55(100) PAG16(100) Resin (2. g) vn w-» S Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparison Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 Comparative Example 10 661 201033733 The meanings in the table are as follows. The acid generator and the resin (C) correspond to those exemplified above as the examples.

39 tt5939 tt59

61 (聚合物4) Mw=7600 Mw/Mn^l.e OH C¥tf^C (聚合物2) MW*7600 MwAiiFl0 0人。61 (Polymer 4) Mw=7600 Mw/Mn^l.e OH C¥tf^C (Polymer 2) MW*7600 MwAiiFl0 0 persons.

OH CCM) Mw«6000 -200- 201033733OH CCM) Mw«6000 -200- 201033733

[鹼性化合物] N-l : N,N-二丁 基苯胺 N-2 : N,N-二己基苯胺 N-3 : 2,6-二異丙基苯胺 © N-4 :三正辛胺 N-5 : N,N-二羥基乙基苯胺 N-6 : 2,4,5-三苯基咪唑 N-7 : 2-[2-{2-(2,2-二甲氧基-苯氧基乙氧基)乙基}-雙 -(2-甲氧基乙基)]·胺 N-8 : 2,4,6-三三級丁基苯胺 N-9 : N-三級戊氧基羰基-4-羥基哌啶 [界面活性劑] 〇 W-1 :美加費斯F176(由大日本油墨及化學公司製造, 含氟) W-2:美加費斯R08(由大日本油墨及化學公司製造’ 含氟及矽) W-3:聚矽氧烷聚合物KP-341(由信越化學有限公司製 造,含矽) W-4:錯伊梭S-366(由錯伊化學製造) W-5: PF65 6(由歐諾瓦製造,含氟) -201 - 201033733 W-6: PF6320(由歐諾瓦製造,含氟) [溶劑] SL-1 :環己酮 SL-2:醋酸丙二醇單甲基醚酯(PGMEA) SL-3 :乳酸乙酯 SL-4 :丙二醇單甲基醚(PGME) SL-5 : r •丁內酯 , SL-6 :碳酸丙二酯 如從表3看見,就線條邊緣粗糙度、浮渣、顯影缺陷、 酸的溶析量、在沉浸曝光時對沉浸液體的流動性、顆粒、 圖案外形及氣泡缺陷全部而論’使用本發明之正光阻組成 物所形成的光阻圖案具有優良的性能。 工業可行性 根據本發明,可提供一種感光化射線或感放射線樹脂 組成物,其能夠形成改良線條邊緣粗糙度及浮渣產生、減 少顯影缺陷、保證僅些微酸溶析進入沉浸液體中、對沉浸 液體有好的流動性、及多種就顆粒抑制、圖案外形及氣泡 缺陷防止而論好的性能之圖案;及使用其之圖案形成方法。 本申請案以2008年12月12日提出的曰本專利申請案 案號 JP 200 8 -3 1 77 5 4、2009年 3月 6日提出的 JP 2009-054291、20.09 年 4 月 3 日提出的 JP 2009-091616、2009 年5月29日提出的JP 2009-131275及2009年10月30曰 提出的JP 2009-251478爲主’其全部內容如若詳細地提出 般藉此以參考方式倂入本文。 -202- 201033733 【圖式簡單說明】 無。 【主要元件符號說明】 無。[Basic compound] Nl : N,N-dibutylaniline N-2 : N,N-dihexylaniline N-3 : 2,6-diisopropylaniline © N-4 : Tri-n-octylamine N- 5 : N,N-dihydroxyethylaniline N-6 : 2,4,5-triphenylimidazole N-7 : 2-[2-{2-(2,2-dimethoxy-phenoxy) Ethoxy)ethyl}-bis-(2-methoxyethyl)]-amine N-8 : 2,4,6-tris-tert-butylaniline N-9 : N-tertiary pentyloxycarbonyl -4-hydroxypiperidine [surfactant] 〇W-1 : Mecan Fiss F176 (manufactured by Dainippon Ink and Chemical Co., Ltd., Fluoride) W-2: Mecca Fiss R08 (manufactured by Dainippon Ink and Chemical Co., Ltd.) 'Fluorine and lanthanum>> W-3: Polyoxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd., containing yttrium) W-4: Wrong Iso S-366 (manufactured by Misaki Chemical) W-5 : PF65 6 (manufactured by Onova, fluorine) -201 - 201033733 W-6: PF6320 (manufactured by Onova, fluorine) [Solvent] SL-1: cyclohexanone SL-2: propylene glycol monomethyl acetate Ethyl ether ester (PGMEA) SL-3: ethyl lactate SL-4: propylene glycol monomethyl ether (PGME) SL-5 : r • butyrolactone, SL-6: propylene carbonate, as seen in Table 3, Line edge roughness, scum, development lack , Analysis of the amount of acid solution, immersed in the exposure of flowability, particle shape and pattern of the whole liquid immersion bubble defects terms' resist pattern using the positive resist composition of the invention is formed has excellent performance. Industrial Applicability According to the present invention, it is possible to provide a sensitized ray or a radiation-sensitive resin composition capable of forming improved line edge roughness and scum generation, reducing development defects, ensuring that only slightly acid is dissolved into the immersion liquid, and immersing The liquid has good fluidity, and various patterns of properties in terms of particle suppression, pattern shape, and bubble defect prevention; and a pattern forming method using the same. This application is filed on December 12, 2008, filed on December 2, 2008, filed on JP 200 8 -3 1 77 5 4, March 6, 2009, JP 2009-054291, April 3, 2009. JP 2009-091616, JP 2009-131275, filed May 29, 2009, and JP 2009-251478, filed on Jan. 29, 2009, the entire disclosure of which is hereby incorporated by reference in its entirety. -202- 201033733 [Simple description of the diagram] None. [Main component symbol description] None.

-203--203-

Claims (1)

201033733 七、申請專利範圍: 1 · 一種感光化射線或感放射線樹脂組成物,其包含: (A)能藉由酸作用增加樹脂(A)在鹼性顯影劑中的溶解度 之樹脂;及 (C)樹脂,其具有至少氟原子或矽原子的任一個且包含一 在由式(KA-1)或(KB-1)所表示的結構中具有至少二 或更多個由-COO-所表示的極性轉換基團之重覆單 元(C):201033733 VII. Patent application scope: 1 · A photosensitive ray or radiation sensitive resin composition comprising: (A) a resin capable of increasing the solubility of the resin (A) in an alkaline developer by an acid action; and (C) a resin having at least one of a fluorine atom or a ruthenium atom and comprising one having at least two or more represented by -COO- in a structure represented by formula (KA-1) or (KB-1) Repeating unit (C) of polarity converting group: 其宁Zka代表烷基、環烷基、醚基團、羥基、醯胺 基團、芳基、內酯環基團或吸電子基團,及當存在有複 數個Zka時,該複數個Zka可相同或不同; 每個Zka可與每個其它zka結合以形成環; nka代表整數0至10 ; 〇 xkbl及xkb2各者各自獨立地代表吸電子基團; nkb及nkb’各者各自獨立地代表0或1 ;及 Rkti至Rkb4各者各自獨立地代表氫原子、烷基、環 烷基、芳基或吸電子基團;、Rk»2及Xkbl之至少二 個成員可彼此結合以形成環;及Rkb3、Rkb4及Xkb2之至 少二個成員可彼此結合以形成環。 2.如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, -204- 201033733 其中該重覆單元(C)爲在一側鏈上具有至少二或更 多個極性轉換基團及至少氟原子或矽原子的任一個之 重覆單元(C’)。 3 .如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該重覆單元(c)爲具有至少二或更多個極性轉 換基團且不具有氟原子或矽原子的重覆單元(c*);及 該樹脂(C)進一步包括具有至少氟原子或矽原子的 任一個之重覆單元。 4·如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該重覆單元(〇爲重覆單元(C"),其在一側鏈上 具有至少二或更多個極性轉換基團,同時在相同重覆單 元中,於與該側鏈不同的側鏈上具有至少氟原子或矽原 子的任一個。 5 .如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該重覆單元(c)具有由下列式(KY-1)所表示的 結構:Its ZZ represents an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a guanamine group, an aryl group, a lactone ring group or an electron withdrawing group, and when a plurality of Zka are present, the plurality of Zka may The same or different; each Zka may be combined with each other zka to form a ring; nka represents an integer of 0 to 10; each of 〇xkbl and xkb2 independently represents an electron withdrawing group; nkb and nkb' each independently represent 0 or 1; and Rkti to Rkb4 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an electron withdrawing group; and at least two members of Rk»2 and Xkbl may be bonded to each other to form a ring; And at least two members of Rkb3, Rkb4 and Xkb2 may be combined with each other to form a ring. 2. The sensitized ray or radiation sensitive resin composition of claim 1, wherein the repeating unit (C) has at least two or more polar switching groups on one side of the chain and A repeating unit (C') of at least one of a fluorine atom or a helium atom. 3. The photosensitive ray or radiation sensitive resin composition of claim 1, wherein the repeating unit (c) is a weight having at least two or more polar converting groups and having no fluorine atom or germanium atom The covering unit (c*); and the resin (C) further include a repeating unit having at least one of a fluorine atom or a ruthenium atom. 4. The sensitized ray or radiation sensitive resin composition of claim 1, wherein the repeating unit (C" is a repeating unit (C") having at least two or more polarities on one side chain a conversion group having at least one of a fluorine atom or a ruthenium atom in a side chain different from the side chain in the same repeating unit. 5. A sensitizing ray or a radiation sensitive resin as claimed in claim 1 a composition, wherein the repeating unit (c) has a structure represented by the following formula (KY-1): 其中Rkyl及Rky4各者各自獨立地代表氫原子、鹵 素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚 -205- 201033733 基團 結至 Rky 1 團; 成一 © 的意 6.如申 成物 的結 ❿ * 素原 基團 單環 、羥基、氰基、酿胺基團或芳基;Rkyl及Rky4可鍵 相同原子以形成雙鍵; Rky2 及 Rky3 各者各自獨立地代表吸電子基團;或 與Rky2結合以形成內酯環,同時Rky3爲吸電子基 Rkyl、Rky2及Rky4之至少二個成員可彼此結合以形 單環或多環結構;及 Rkbi至Rkb4、nkb及nkb’具有與在式(KB-1)中相同 義。 請專利範圍第1項之感光化射線或感放射線樹脂組 9 其中該重覆單元(C)具有一由下列式(KY-2)所表示 雄 · 構·Wherein each of Rkyl and Rky4 independently represents a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether-205-201033733 group united to a Rky 1 group; Such as the crusting of the product * primogen monocyclic, hydroxy, cyano, aryl or aryl; Rkyl and Rky4 can be bonded to the same atom to form a double bond; Rky2 and Rky3 each independently represent An electron withdrawing group; or a combination of Rky2 to form a lactone ring, and at least two members of Rky3 being an electron withdrawing group Rkyl, Rky2, and Rky4 may be bonded to each other to form a monocyclic or polycyclic structure; and Rkbi to Rkb4, nkb, and Nkb' has the same meaning as in the formula (KB-1). The photosensitive ray or radiation sensitive resin group of the first aspect of the patent range 9 wherein the repeating unit (C) has a structure represented by the following formula (KY-2). 其中Rky6至Rky 10各者各自獨立地代表氫原子、鹵 子、烷基、環烷基、羰基、羰氧基、氧基羰基、醚 、羥基、氰基、醯胺基團或芳基; Rky6至RkylO之二或更多個成員可彼此結合以形成 或多環結構; Rky5代表吸電子基團;及 Rkbi、Rkb2及nkb具有與在式(KB-1)中相同的意義。 -206- 201033733 7 .如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該樹脂(C)具有至少一個由式(F2)至(F4)及式 (CS-1)至(CS-3)之任何一種所表示的基團: ReeWherein each of Rky6 to Rky 10 independently represents a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, a guanamine group or an aryl group; Two or more members to RkylO may be bonded to each other to form a polycyclic structure; Rky5 represents an electron withdrawing group; and Rkbi, Rkb2 and nkb have the same meanings as in the formula (KB-1). -206-201033733. The photosensitive ray or radiation sensitive resin composition of claim 1, wherein the resin (C) has at least one of the formulae (F2) to (F4) and (CS-1) a group represented by any of (CS-3): Ree (F2) (F3) (F4) -一Κβ7 〜OH ❹ 其中R57至R6 8各者各自獨立地代表氫原子、氟原 子、線性或分支烷基或芳基’其限制條件爲r57至r61 之至少一個、R62至R64之至少一個及R65至r68之至少 一個各者各自獨立地代表氟原子或含有至少一個氫原 子由氟原子置換的院基,及R·62與R63可彼此結合以形 成環:(F2) (F3) (F4) - a Κβ7 ~OH ❹ wherein each of R57 to R6 8 independently represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group or an aryl group, and the restriction condition is at least r57 to r61 At least one of R62 to R64 and at least one of R65 to r68 each independently represent a fluorine atom or a hospital group containing at least one hydrogen atom replaced by a fluorine atom, and R.62 and R63 may be bonded to each other to form a ring: O Ls R12—Sl-R14 Rl$ (CS-1) 其中Riz至R26各者各自獨立地代表線性或分支烷 基或環烷基; L:}至L5各者代表單鍵或二價連結基團;及 η代表整數1至5。 -207- 201033733 8 ·如申請專利範圍第7項之感光化射線或感放射線樹脂組 成物* 其中該樹脂(C)包括至少一個具有由式(F2)至(F4) 及式(CS-1)至(CS-3)之任何一種所表示的基團之丙烯酸 酯或甲基丙烯酸酯重覆單元。 9.如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該樹脂(C)的含量從〇.〇1至1〇質量%’以在該 感光化射線或感放射線樹脂組成物中的全部固體含量 爲準。 1 〇.如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物,其更包含: (B)能在以光化射線或輻射照射後產生酸的化合物。 1 1 .如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該樹脂(A)包括含內酯結構的重覆單元。 1 2.如申請專利範圍第1項之感光化射線或感放射線樹脂組 成物, 其中該樹脂(A)具有單環或多環之可酸分解的基 團。 13. —種光阻薄膜,其從如申請專利範圍第1項之感光化射 線或感放射線樹脂組成物形成。 14. 一種圖案形成方法,其包括: 沉浸曝光及顯影如申請專利範圍第13項之光阻薄 膜。 -208- 201033733 四、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: Μ 〇 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:O Ls R12—Sl-R14 Rl$ (CS-1) wherein each of Riz to R26 independently represents a linear or branched alkyl or cycloalkyl group; and each of L:} to L5 represents a single bond or a divalent linking group; ; and η represent integers 1 to 5. -207- 201033733 8 - Photosensitive ray or radiation sensitive resin composition as claimed in claim 7 wherein the resin (C) includes at least one of the formulae (F2) to (F4) and (CS-1) An acrylate or methacrylate repeating unit of the group represented by any of (CS-3). 9. The photosensitive ray or radiation sensitive resin composition according to claim 1, wherein the resin (C) is contained in an amount of from 0.1 to 1% by mass in the composition of the sensitized ray or the radiation sensitive resin. The total solids content in the product is correct. 1 . The photosensitive ray or radiation sensitive resin composition of claim 1, further comprising: (B) a compound capable of generating an acid after irradiation with actinic rays or radiation. The photosensitive ray or radiation sensitive resin composition of claim 1, wherein the resin (A) comprises a repeating unit having a lactone structure. 1. The photosensitive ray or radiation sensitive resin composition of claim 1, wherein the resin (A) has a monocyclic or polycyclic acid-decomposable group. A photoresist film formed from a photosensitive ray or a radiation sensitive resin composition as in the first aspect of the patent application. A pattern forming method comprising: immersing exposure and developing a photoresist film as in claim 13 of the patent application. -208- 201033733 IV. Designation of Representative Representatives: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: Μ 〇 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
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TWI799392B (en) * 2016-10-04 2023-04-21 日商富士軟片股份有限公司 Actinic radiation-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and manufacturing method of electronic component

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JP6134539B2 (en) * 2013-02-28 2017-05-24 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
JP6014517B2 (en) * 2013-02-28 2016-10-25 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method

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US10331031B2 (en) 2013-09-12 2019-06-25 Jsr Corporation Resin composition, resist pattern-forming method and polymer
TWI799392B (en) * 2016-10-04 2023-04-21 日商富士軟片股份有限公司 Actinic radiation-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and manufacturing method of electronic component

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