201033411 ’ 六、發明說明： 【發明所屬之技術領域】 本發明係提供一種矽料之純化方法，尤指一種可藉由本發明之方法即 可得到純化後之固體矽料’進而達到矽料純化之目的。 【先前技術】 按，目前太陽能晶圓使用的矽原料係以西門子法（Simens meth〇d)所 生產的多晶砍（polysiliCQn)為主；該西門子法係以冶金級料原料與純 參鹽酸（HC1)加熱作用生成三氣梦甲院（SiHcl3)，經過多次分館，而將石夕 料内所含之雜質降至lppm以下，最後再通入氫氣（HO在11〇〇它下將該三 氣石夕甲烧還原成多晶碎；惟’以間子法生產多㈣，當欲新增生產線時 其時間約需兩年方能投產，且該一條產線須耗費相當龐大的資金、以及高 耗能高環評標準之需求，因而增加擴產之困難； 再者，進而有人利用方向性凝固法（Direction SoUdmcaUon)， 來降低矽料之雜質濃度達到矽料純化之目的；但方向性凝固其熔融/再結晶 過程僅為單次性，其純化效果不佳；而且方向性凝固製程須使用石英坩堝 承受熔融矽原料，高溫環境下會污染坩堝周邊的矽熔湯，且在方向性凝固 製程中必須使用大量電能用於加熱爐體，因而增加生產成本； 又如，中華民國專利公報申請第096112048號，一種矽之純化方法， 請參閱第六圖所示，其步驟係為：由矽u與溶劑金屬12混合形成第一熔 融液13 ’將第一熔融液13與第一氣體14接觸形成浮渣16及第二熔融液 15，並將浮渣16與第二熔融液15各別分離，且係將第二熔融液15冷卻形 成第一矽晶體17及第一母液18’最後再將第一矽晶體π與第一母液18分 201033411 離，即可獲得純化之發晶體； 該上述之一種矽之純化方法，其雖可將矽料加以純化，惟其純化過程 中必須添加溶劑金屬12及第一氣體14,且必須經過冷卻才可得到矽晶體， 因此其矽料之純化程序較複雜、及耗費工時，故較不符合經濟效益； 因此’本案發明人鑑於上述之缺失，因而乃亟思加以創新開發，研發 出一種矽料之純化方法。 【發明内容】 鲁 本發明之主要目的係提供一種發料之純化方法，其包含下列步驟： 第一步驟：備料，準備含雜質之冶金級固體矽料； 第二步驛：填人，將第—步驟之固體砍料置人受熱裝置容器内，該容 器之内徑大於該固體矽料之外徑； 第二步驟·加熱，將第二步驟中已置入固趙石夕料之受熱裝置容器以熱 源加熱’該熱源為加練置，又該熱晴應之@财料位置形成溶融區， 又該熔融區為帶狀高溫區’且娜融區内之隨補形成_之溶湯俾 鲁使該固體石夕料内之雜質熔融於液態之熔湯内，又該熱源與固财料移開 後’細體石夕料其液態之溶湯即會因溫度下降而再次結晶； 第四步驟：熱驗移，係將第三麵巾已置設有固财料之受熱裝置 容器固定，再職聽沿著該受絲置容^歸加熱，贿贿源位置， 俾使該液S之麟在體;^制轉，而可财勒之雜質可逐 漸往該固财料之-_中_成雜質區塊； 第五步称·切除’將已經完成第四步驟之固趙德取iij，再將該固體 碎料之雜質區塊切除’即可得到純化之固體梦料； 4 201033411 藉由本發明之方法即可得到純化後之固體矽料，進而達到矽料純化 目的。 ，'、之 【實施方式】 為使責審査員方便簡捷瞭解本發明之其他特徵内容與優點及其所達 成之功效能夠更為顯現，茲將本發明配合附圖，詳細說明如下： 請參閱第-圖、第二圖所示，本發明之主要目的係提供_種石夕料之純 化方法’其包含下列步驟： ® 第一步驟：備料21，準備含雜質34之冶金級固體矽料，又該固想梦料 31可為條棒狀； 第二步驟：填入22，將第一步驟之固體矽料31置入受熱裝置容器犯 内，該受熱裝置容器32之内徑大於該固艘石夕料31之外徑，又該固體石夕料 31之梵熱裝置容器32内抽成真空，再將惰性氣體注入該受熱裝置容器π 内’該惰性氣體可為氬氣； 第三步驟：加熱23，請配合參閱第三圖所示，將第二步驟中已置入固 〇 體洲31之受熱裝置容器32以熱源加熱，該熱源可為加熱裝置33、或加 熱線圈、或石墨加熱器，又該熱源所對應之固體石夕料31位置可形成一熔融 區35，又該熔融區35係為一帶狀高溫區，該帶狀高溫區其溫度為14〇〇»c 〜1600 C，且該熔融區35内之固體矽料31可因高溫而熔融形成液態之熔 湯’使得該固體矽料31内之雜質34可熔融於液態之熔湯内； 第四步驟：熱源位移24，請參閱第三圖並搭配第四圖所示，係將第三 步驟中已置設有固體矽料31之受熱裝置容器32固定，再將該熱源沿著該 受熱裝置容器32位移加熱’以改變熱源加熱位置，俾藉由改變熱源加熱位 201033411 置，使得該第三步驟6受熱過之受歸置容ϋ 32其ϋ體補31之液態溶 河可因"、、源離開、概度下降而再次結晶，此時該雜質34較易活動於液態熔 湯内的特性’俾使得該雜f 34可隨著液態之料位移聚集也因而可使得 該液態之溶濟可在該固體石夕料31内位移，進而可將該固體發料幻内之雜 質34可逐漸往該固體石夕料31之一端集中而形成雜質區塊36，而如第五圖 - 所示； 第五步驟.姆25 ’將已經完成第四步驟之固體梦料31取出，再將該 _ ®體石夕料31之雜質區塊36切除，即可得到純化之固體石夕料μ ; 藉由本發鴨含雜質34之冶金級gj财料3卜峨騎固體石夕料 31逐漸位移加熱，而可將該固體矽料3丨内之雜質弘往固體矽料3丨一端位 移聚集而形成雜質區塊36，再將雜質區塊36切除，即可得到純化後之固體 矽料31 ’而可達到石夕料純化之目的，且可再藉由重複第三步驟及第四步驟， 俾可更加純化該矽料之效果； 再者’本發明也可令第四步驟中熱源位移24替換為受熱裝置容器位移 〇 26 ’而如第一A圖所:if： ’也即將該熱源固定不動，而該置設有固體石夕料31 之受熱裝置容器32沿著熱源位移，以改變受熱裝置容器32其受熱位置， 俾藉由改變受熱裝置容器32受熱位置，使得該第三步驟已受熱過之受熱裝 置容器其固體矽料31之液態熔湯可因熱源離開、溫度下降而再次結晶，此 時該雜質34較易活動於液態熔湯内的特性，俾使得該雜質34可隨著液態 之熔湯位移聚集，也因而可使得該液態之熔湯可在該固體矽料31内位移， 進而可將該固體矽料31内之雜質34可逐漸往該固體石夕料31之一端集中而 形成雜質區塊36，而如第五圖所示。 6 201033411 為使本發明更加顯現出其進步性與實用性，兹與先前技術作一比較分 析如下： 習用缺失： 1、 須耗費相當龐大的資金。 2、 増加生產成本。 3、 純化程序較複雜。 本發明優點： 1、 利用熱源加熱方式純化矽料。 2、 其加熱裝置設備成本較低。 3、 步驟流程較簡便。 【圖式簡單說明】 第一圖係為本發明之步驟流程示意圖。 第--A圖係為本發明之另一步驟流程示意圖。 第二圖係為本發明中第二步驟之置入受熱裝置容器示意圖。 第三圖係為本發明中第三步驟之對秒晶加熱示意圖。 第四圖係為本發明中第四步驟之改變矽晶受熱位置示意圖。 第五圓係為本發明中第五步驟之取出固體矽料示意圖。 第六圖係為中華民國專利公報申請第〇96112〇48號之流程示意圖。 【主要元件符號說明】 11.. 矽 12·.溶劑金屬 13.. 第一溶融液 201033411 14.. 第一氣體 15.. 第二熔融液 16.. 浮逢 17.. 第一矽晶體 18.. 第一母液 21.. 備料 22.. 填入 H 23..加熱 24.. 熱源位移 25.. 切除 26.. 受熱裝置容器位移 31.. 固體矽料 32.. 受熱裝置容器 33.. 加熱裝置 φ 34..雜質 35.. 熔融區 36..雜質區塊201033411 ' VI. Description of the invention: [Technical field to which the invention pertains] The present invention provides a method for purifying a dip, in particular, a solid dip which can be obtained by the method of the invention to further purify the dip. purpose. [Prior Art] According to the current, the raw materials used in solar wafers are mainly polysili CQn produced by Siemens (Simens meth〇d); the Siemens method uses metallurgical grade raw materials and pure ginseng hydrochloric acid ( HC1) heating to produce three gas Mengjiayuan (SiHcl3), after many times, the impurities contained in the stone material are reduced to less than 1ppm, and finally hydrogen is introduced (HO is under 11〇〇, the three The gas stone is reduced to polycrystalline crush; however, it is produced by the inter-method method. When it is desired to add a new production line, it takes about two years to start production, and the production line costs a considerable amount of money, and High energy consumption and high environmental impact assessment standards, thus increasing the difficulty of expansion; in addition, some people use Directional Solidification (Direction SoUdmcaUon) to reduce the impurity concentration of the feed to the purpose of purification of the feed; but directional solidification The melting/recrystallization process is only a single-pass, and the purification effect is not good; and the directional solidification process must use quartz crucible to withstand the melting of the raw material, and the high temperature environment will contaminate the crucible soup around the crucible, and directional condensation In the process, a large amount of electric energy must be used for heating the furnace body, thereby increasing the production cost. For example, in the Republic of China Patent Gazette Application No. 096112048, a purification method of the crucible is shown in the sixth figure, and the steps are as follows: u is mixed with the solvent metal 12 to form the first melt 13'. The first melt 13 is brought into contact with the first gas 14 to form the dross 16 and the second melt 15, and the dross 16 and the second melt 15 are separated from each other. And cooling the second molten liquid 15 to form the first tantalum crystal 17 and the first mother liquid 18', and finally separating the first tantalum crystal π from the first mother liquid 18 by 201033411, thereby obtaining a purified hair crystal; A method for purifying hydrazine, which can purify the mash, but must add the solvent metal 12 and the first gas 14 during the purification process, and must be cooled to obtain the ruthenium crystal, so the purification procedure of the mash is complicated. And it takes less time and labor, so it is less economical; therefore, in view of the above-mentioned shortcomings, the inventor of this case has developed and developed a method for purifying the dip. The main object of the present invention is to provide a method for purifying a hairdressing comprising the following steps: First step: preparing a material to prepare a metallurgical grade solid material containing impurities; second step: filling, cutting the solid of the first step The material is placed in a container of the heating device, the inner diameter of the container is larger than the outer diameter of the solid material; the second step is heating, and the container of the heating device that has been placed in the second step is heated by a heat source. The heat source is added, and the hot spot should be formed into a melting zone, and the melting zone is a strip-shaped high temperature zone, and the compounding in the Narong zone is formed. The impurities in the melt are melted in the liquid molten soup, and after the heat source and the solid material are removed, the liquid soup of the fine stone will be crystallized again due to the temperature drop; the fourth step: thermal inspection, the system will The third face towel has been fixed with the heat-receiving device container of the solid material, and the re-acquisition is heated along the wire, and the position of the bribe is taken, so that the liquid S is in the body; And the impurities of the company can gradually go to the solid material - _ _ into the impurity block; Five-step weighing and cutting 'will take the fourth step of Gu Zhaode to take iij, and then cut the impurity block of the solid scrap to obtain a purified solid dream material; 4 201033411 can be obtained by the method of the present invention The purified solid dip is further purified for the purpose of purification. [Embodiment] In order to make it easier for the examiner to understand the other features and advantages of the present invention and the effects achieved thereby, the present invention will be described in detail with reference to the accompanying drawings: - Figure 2, the main object of the present invention is to provide a method for purifying a stone material, which comprises the following steps: ® First step: preparing 21, preparing a metallurgical grade solid waste containing impurities 34, The imaginary dream material 31 may be in the form of a bar; the second step: filling in 22, placing the solid material 31 of the first step into the container of the heating device, the inner diameter of the heat receiving device container 32 being larger than the solid stone The outer diameter of the evening material 31, and the vacuum chamber container 32 of the solid stone material 31 is evacuated, and then an inert gas is injected into the container π of the heating device. The inert gas may be argon; the third step: heating 23, please refer to the third figure, the heat-receiving device container 32 which has been placed in the solid body 31 in the second step is heated by a heat source, which may be a heating device 33, or a heating coil, or a graphite heater. And the solid corresponding to the heat source The location of the stone material 31 can form a melting zone 35, and the melting zone 35 is a strip-shaped high temperature zone having a temperature of 14 〇〇»c 1600 1600 C, and the solid in the melting zone 35 The material 31 can be melted to form a liquid molten soup due to high temperature, so that the impurities 34 in the solid material 31 can be melted in the liquid molten soup; Fourth step: heat source displacement 24, please refer to the third figure and match the fourth As shown in the figure, the heat receiving device container 32 in which the solid waste material 31 has been disposed in the third step is fixed, and then the heat source is displaced along the heat receiving device container 32 to change the heat source heating position, by changing the heat source. The heating position 201033411 is set such that the third step 6 is subjected to the heat of the accommodating volume 32. The liquid solvating river of the corpus callosum 31 can be recrystallized due to the falling away from the source, and the impurity is 34. The property of the liquid melt in the liquid melt is such that the miscellaneous f 34 can be displaced as the liquid material is displaced, so that the liquid solvent can be displaced within the solid stone material 31, and the solid can be The impurity 34 in the illusion may gradually go to one of the solid stone materials 31 The ends are concentrated to form the impurity block 36, as shown in the fifth figure - the fifth step. The second step 25' takes the solid dream material 31 which has completed the fourth step, and then removes the impurity of the _® body stone material 31 Block 36 is excised to obtain a purified solid stone material μ; and the solid material 3 can be gradually displaced by the metallurgical grade gj material 3 of the hair duck containing impurities 34, and the solid stone material 31 is gradually displaced and heated. The impurity in the crucible is transferred to the solid crucible at one end to form an impurity block 36, and then the impurity block 36 is cut off to obtain a purified solid crucible 31', which can achieve the purpose of purifying the stone material. Moreover, by repeating the third step and the fourth step, the effect of the material can be further purified; in addition, the invention can also replace the heat source displacement 24 in the fourth step with the heat container displacement 〇26'. First A::if: 'The heat source is also fixed, and the heat-receiving device container 32 provided with the solid stone material 31 is displaced along the heat source to change the heat-receiving position of the heat-receiving device container 32, by changing The heat receiving device container 32 is heated to a position such that the third step has been The liquid melt of the solid waste material 31 of the heat-receiving device container may be recrystallized due to the heat source leaving and the temperature decreasing. At this time, the impurity 34 is more likely to move in the liquid melt, so that the impurity 34 can follow The molten liquid melts and accumulates, so that the liquid molten material can be displaced in the solid waste material 31, and the impurities 34 in the solid waste material 31 can be gradually concentrated toward one end of the solid stone material 31. The impurity block 36 is formed as shown in the fifth figure. 6 201033411 In order to make the invention more progressive and practical, a comparison with the prior art is as follows: Lack of use: 1. It takes a considerable amount of money. 2. Increase production costs. 3. The purification procedure is more complicated. Advantages of the invention: 1. Purification of the dip material by heat source heating. 2. The cost of the heating device is low. 3. The process of the steps is relatively simple. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic flow chart of the steps of the present invention. The first--A diagram is a schematic flow chart of another step of the present invention. The second figure is a schematic view of the container placed in the heat receiving device in the second step of the present invention. The third figure is a schematic diagram of the second step heating of the second step in the present invention. The fourth figure is a schematic diagram showing the change of the heating position of the twin crystal in the fourth step of the present invention. The fifth circle is a schematic diagram of the solid waste taken out in the fifth step of the present invention. The sixth drawing is a schematic diagram of the process of the Republic of China Patent Gazette Application No. 〇96112〇48. [Description of main component symbols] 11.. 矽12·. Solvent metal 13.. First molten liquid 201033411 14.. First gas 15.. Second melt 16: Floating point 17.. First 矽 crystal 18. First mother liquid 21.. Preparation 22: Filling in H 23. Heating 24: Heat source displacement 25.. Removal 26: Heater container displacement 31.. Solid material 32.. Heated device container 33.. Heating Device φ 34.. Impurity 35.. Melting zone 36.. Impurity block