201032366 六、發明說明： 【發明所屬之技術領域】 本發明係有關-種製作平台式_SA)晶片之技術，特別是指—種壓電 石英振盈子晶片之結構及其製作方法。 【先前技術】 按’石英振盪子⑼如卿咖触）是缝電路巾決定紐頻率的關 鍵料’其係制單晶石英晶體赠狀切财式並峨械加王方式予以 表面研磨，由於單結晶之石英晶體結構具有壓電效應（咖〇游⑻特性， ®故掌握住石英晶體之壓電效應及其發生共振辭之特性即可設計出各類頻 率信號之石英振盪器。 石奂B曰片之外型切割流程如第1圖所示，包括頻率研磨、外型切割研 磨、圓邊及浸餘等步驟。當石英振盪子微小化或是使用於低頻產品時，單 純平面式的晶片振盪波會由邊緣消散使得阻抗值極高，為了降低阻抗通常 以圓邊方式將石英晶片放入滾筒中使其邊緣磨成圓弧形，用以侷限振動能 量達到降低阻抗之目的，但隨著石英振盪子尺寸不斷縮小，傳統圓邊方式 ❹ 所能達到之效果已逐漸受限，因此利用浸蝕製作平台式石英晶片的方式逐 漸受到重視。一般製程係使用黃光來製作平台式石英晶片，黃光製程與傳 統單片式石英晶片製程並不相容，且黃光製程成本高昂。 因此’本發明即提出一種壓電石英振盪子晶片之結構及其製作方法， 使用遮罩方式來製作平台式之石英晶片，以有效克服上述之該等問題，具 體架構及其實施方式將詳述於下❶ 【發明内容】 本發明之主要目的在提供一種壓電石英振盪子晶片之製作方法’其係 3 201032366 使用遮罩方式定義凸起部，製作出平台式之石英晶片。 本發明之另-目的在提供一種壓電石英振盈子晶片之製作方法，其所 使用之以遮軍方式定義凸起部之方法可相容於傳統之石英晶片製程，以取 代高成本之黃光製程，同樣可達到降低阻抗之目的。 本發明之再—目的在提供—種壓電石英振盪子晶片之結構，其凸起部 係形成於石英晶體之單面或雙面。 〇 本發明之再-目的在提供―種壓電盪子晶片之結構及其製作方 0 其係·上膠於平台低部’主減區於凸起部，防止振紐從點膠處 失。 為達上述之目的，本發明提供一種壓電石英振盤子晶片之結構，匕 一石英晶體以及至少—凸起部，此凸起部係位於石英晶體之表面中央，; 有-凸起αΡ則分別位於石英晶體相對面之二表面上。 參 本發料提供-種遷電石英振i子晶片之製作方法其係包括下州 驟.將至少-石英晶體研磨至一預設之厚度並切割至預設之外型；於1 姓★液中_ ’於石英晶體上形成至少—保護層；_石英晶體，使保言 層所覆蓋之區域凸出，形於至少—凸起部；以及去除保護層。 底下藉由具體實施例詳加，當更容嫌解本發明之目的技射 容、特點及其所達成之功效。 【實施方式】 月提供觀電石英振盪子晶片之結構及其製 ^代傳統成梅之黃咖，且綱單、穩定、可控性佳、效率高 更可相容於_之碎晶片製程。 201032366 第2圖所示為本發明帽電石英絲子晶片之製作方法之流程圖以 將石英晶體製作成所需之平台式錢石英減子晶心如圖所示步驟⑽ 為頻率研磨，將石英晶體研磨至—預設之厚度，此厚度與最終成品所需之 鮮有關’ ϋ此相當於龍電石英振盪子晶片之鮮進行_ ;接著於步 驟S12進行外型切割研磨’再於步驟SM中將石英晶趙置入—浸钱溶液進 行_，此步驟之用意在於使其頻率特性一致；接著進行步驟训以遮罩 (mask)方式進行平“域定義，於石英晶體上形成至少—雜護層此 ©紐層係用以定義出平台區域，其可為金屬層或高分子層且此保護層之 範圍係以群蚊義；麵S18將辟晶體断侧，赋侧或濕式敍 刻皆可’用意在於將沒有被保護層所覆蓋之區域去除，使被保護層所覆蓋 之區域凸出’形成凸起部，此凸起部即為本發明帽欲定義之平台區域， 最後於步驟S20中將保護層去除，即完成壓電石英振好晶片之製作。 其中，步驟S10係利用一平面研磨機研磨石英晶體，由於石英之厚度 會影響其共振頻率，亦即要得到所需求的共振頻率便需調整石英之厚度， © 在步驟S10中先以研磨粗調至一大概厚度後，再於步驟训控制浸餘時間 對石英晶體之厚度進行微調，當;5英晶體整體鮮調整為—致後再製作平 台區域（亦即凸起部）’完成本發明之壓電石英振盪子晶片。 本發明與先前技術之不同處在於以遮罩方式定義平台區域取代傳統之 圓邊，具有製程穩定、可於小尺寸石英晶片上應用、生產效率高等優點； 此外’以遮罩方式定義平台區域，與利用黃光製程來定義平台區域相較之 下，由於黃光製程無法與傳統石英晶片製程相容，製葶步驟必然會增加， 再者黃光製程成本高昂，而以遮罩方式定義平台區域之成本較黃光製程低 201032366 廉許多。 本發明之遮罩結構如第3圖所示，於一間隔物（spacer) 2〇上下各上一 層遮罩22，再於遮罩22外層再各加一壓板（h〇丨der) 24，每一層間隔物2〇、 遮罩22及壓板24上皆具有相同數量之圖紋2〇2、222及242，其中間隔物 的圓紋2〇2縣置入並固定晶片，而遮罩a之圖紋222係用以定義保護 層之範圍。 平。式石英晶體結構請參考第从圖，在石英晶體1〇上形成保護層η ©做為遮罩’此保護層12位於石英晶體1()之上；當石英晶體⑺經過餘刻後 會形成如第4B圖所示之形狀的壓電石英振盈子晶片16，此時石英晶體 會留下保護層所覆蓋之區域未被_，從而形成凸起部14，保護層周圍之 石英晶體10則被蝕刻而變薄。 凸起部14可單面形成於石英晶體1〇上，亦可雙面形成如第5a圖所 示，於保護層12之相對表面亦設有—保護層12，，因此侧、去除保護層 U後’形成如第5B圖所示之壓電石英振虚子晶片^，，具有凸起部μ φ 及14’兩個平台區域。 本發明之壓電石英織子晶片可單片製作，亦可大片製作後再切割， 先在大片之石英晶體上進行遮罩、侧、去除保護層等步驟形成複數組凸 起部，使每-組凸起部包括一個或兩個凸起部，再將石英晶體切割為複數 麼電石英振盈子晶片，使每—壓電石英振藍子晶片上皆具有—組凸起部。 第6圖為本發明中以遮罩方式產生凸起部晶片製成石英振好成品之 示意圖’如圖所示，此石英振盪子成品包括壓合而成之封裝底層30，最上 方即為利用本發明方法所製作之壓電石英振盡子晶片16，其上設有電極、 6 201032366 佈線等（圖中未示）’壓電石英振盈子晶片16上方凸起處即為本發明甲以 钱刻方式產生之凸起部14 » 綜上所述，本發明所提供之壓電石英振盪子晶片之結構及其製作方法 係使用於平台式之石英晶片製作，以遮罩方式進行平台區域之定義，可免 除成本高昂之黃光製程並可與傳統石英晶片製程相容，且本發明所提供之 壓電石英振堡子晶片之結構係上膠於凸起部外圍較低區域，主振盈區於凸 起部’防止振盪波從點勝處散失，並藉由此凸起部之結構降低壓電石英振 〇 I子晶>1之阻抗’製程簡單、製程時間短、成本低，並可達到良好之可控 性。 唯以上所述者，僅為本拥之擁實施例而已，並義紐定本發明 實施之範圍。故即歧本發日种請所述之碰及精撕為之均等變化 或修飾，均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 第1圖為先前技術巾製健電;5英減子晶#之流程圖。 ⑩第2圖為本發明中製作壓電石英振盈子晶片之流程圖。 第3圖為本發明所使用之遮罩結構示意圖。 第4八圖及第4B圖為本發明中以遮罩方式產生單面凸起部之示意圖。 第5A圖及第5B圖為本發明中以遮罩方式產生雙面凸起部之示意圖。 第6圖為本發明中以遮罩方式產生凸起部晶片製成石英振好成品之示、 圓。 不意 【主要元件符號說明】 1〇 石英晶體 7 201032366 12、12’ 保護層 14、14, 凸起部 16、16, 壓電石英振盪子晶片 20 間隔物（spacer) 22 遮罩（mask) 24 壓板（holder) 30 封裝底層 〇 8201032366 VI. Description of the Invention: [Technical Field] The present invention relates to a technique for fabricating a wafer type _SA wafer, and more particularly to a structure of a piezoelectric quartz vibration sub-wafer and a method of fabricating the same. [Prior Art] Pressing 'Quartz Oscillator (9) such as Qingcha Touch) is the key material for determining the frequency of the stitching of the circuit to be used for the circuit of the single crystal quartz crystal, and the surface is ground by the mechanical method. The crystalline quartz crystal structure has a piezoelectric effect (the characteristics of the curry (8), so that the quartz effect of the quartz crystal and its resonance characteristics can be used to design a quartz oscillator of various frequency signals. The sheet-out cutting process, as shown in Figure 1, includes frequency grinding, profile cutting, rounding, and immersion. When the quartz resonator is miniaturized or used in low-frequency products, the simple planar wafer oscillation The wave will be dissipated by the edge so that the impedance value is extremely high. In order to reduce the impedance, the quartz wafer is usually placed into the drum in a rounded manner, and the edge is ground into a circular arc shape to limit the vibration energy to reduce the impedance, but with the quartz. The size of the oscillator has been shrinking, and the effect of the traditional round-edge method has been gradually limited. Therefore, the method of making a platform-type quartz wafer by etching has been gradually paid attention to. The program uses yellow light to make a platform-type quartz wafer. The yellow light process is incompatible with the conventional monolithic quartz wafer process, and the yellow light process is expensive. Therefore, the present invention proposes a structure of a piezoelectric quartz resonator chip and The manufacturing method uses a mask method to fabricate a platform-type quartz wafer to effectively overcome the above problems, and the specific architecture and its implementation will be described in detail below. SUMMARY OF THE INVENTION The main object of the present invention is to provide a piezoelectric A method for fabricating a quartz crystal oscillator chip, the system 3 201032366, defines a convex portion by using a mask method, and produces a quartz crystal wafer. Another object of the present invention is to provide a method for fabricating a piezoelectric quartz vibration sub-wafer. The method of defining the convex portion by means of occlusion can be compatible with the conventional quartz wafer process to replace the high-cost yellow light process, and the impedance can also be reduced. The re-purpose of the present invention is provided. The structure of the piezoelectric quartz oscillator chip has a convex portion formed on one side or both sides of the quartz crystal. The structure of the piezoelectric wafer is prepared and spliced to the lower part of the platform, and the main reduction zone is in the convex portion to prevent the vibration from being lost from the dispensing. For the above purpose, the present invention Provided is a structure of a piezoelectric quartz crystal plate wafer, a quartz crystal and at least a convex portion, the convex portion is located at a center of a surface of the quartz crystal; and the convex-arc α is respectively located on two surfaces of the opposite surface of the quartz crystal The present invention provides a method for fabricating a regenerative quartz vibrating i-sub-wafer which includes a lower state. The at least quartz crystal is ground to a predetermined thickness and cut to a preset shape; ★ In the liquid _ 'form at least the protective layer on the quartz crystal; _ quartz crystal, the area covered by the layer of the layer is convex, shaped at least - the convex portion; and the protective layer is removed. Adding, when it is more difficult to understand the purpose of the present invention, the characteristics of the technology, the characteristics and the effect achieved. [Embodiment] monthly to provide the structure of the observation quartz crystal oscillator chip and its traditional generation into the yellow, and Outline, stable, controllable, and efficient _ May be compatible with the broken wafer process. 201032366 Fig. 2 is a flow chart showing a method for fabricating a capped quartz wire wafer according to the present invention to prepare a quartz crystal into a desired platform type quartz quartz subtractor crystal center as shown in the step (10) for frequency grinding, quartz The crystal is ground to a predetermined thickness which is related to the freshness required for the final product ' ϋ 相当于 相当于 相当于 相当于 相当于 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Quartz crystal Zhao is placed into the immersion solution for _, the purpose of this step is to make the frequency characteristics consistent; then the steps are masked to perform a flat "domain definition, forming at least - the protection on the quartz crystal The layer is used to define the platform region, which may be a metal layer or a polymer layer and the protective layer is in the form of a group of mosquitoes; the surface S18 will open the crystal side, the side or the wet pattern It can be used to remove the area not covered by the protective layer, so that the area covered by the protective layer protrudes to form a convex portion, which is the platform area to be defined by the cap of the present invention, and finally in step S20. Lieutenant protection After the removal, the fabrication of the piezoelectric quartz vibrating wafer is completed. Among them, step S10 uses a plane grinder to grind the quartz crystal. Since the thickness of the quartz affects the resonant frequency, it is necessary to adjust the quartz to obtain the required resonant frequency. The thickness, © in the step S10, first coarsely adjusted to a rough thickness, and then in the step control to control the dipping time to fine-tune the thickness of the quartz crystal, when the 5 inch crystal is freshly adjusted to the nearest post-production platform The region (i.e., the raised portion) 'completes the piezoelectric quartz oscillator chip of the present invention. The difference between the present invention and the prior art is that the platform region is defined by a mask to replace the conventional rounded edge, and the process is stable and can be small in size. Quartz wafer application, high production efficiency; In addition, the definition of the platform area by mask, compared with the use of the yellow light process to define the platform area, because the yellow light process can not be compatible with the traditional quartz wafer process, the preparation step Inevitably will increase, and the cost of the yellow light process is high, and the cost of defining the platform area by masking is lower than that of the yellow light process 201032366 The mask structure of the present invention is as shown in FIG. 3, and a mask 22 is placed on top of and below a spacer 2, and a pressure plate is added to the outer layer of the mask 22 (h〇丨der). 24, each of the spacers 2 〇, the mask 22 and the pressure plate 24 have the same number of patterns 2 〇 2, 222 and 242, wherein the spacer 2 〇 2 county is placed and fixed to the wafer, and the mask The pattern 222 of a is used to define the range of the protective layer. For the flat quartz crystal structure, please refer to the figure from the figure, and form a protective layer η on the quartz crystal 1 © as a mask 'This protective layer 12 is located in the quartz crystal 1 Above (); when the quartz crystal (7) is passed through, a piezoelectric quartz oscillator wafer 16 having a shape as shown in FIG. 4B is formed, and the quartz crystal leaves the area covered by the protective layer without _, Thereby, the convex portion 14 is formed, and the quartz crystal 10 around the protective layer is etched and thinned. The convex portion 14 can be formed on the quartz crystal 1 单 on one side, or can be formed on both sides as shown in FIG. 5 a , and the protective layer 12 is also disposed on the opposite surface of the protective layer 12 , so the side and the protective layer U are removed. After that, a piezoelectric quartz imaginary sub-wafer, as shown in Fig. 5B, is formed, and has two land regions of convex portions μ φ and 14'. The piezoelectric quartz woven fabric of the present invention can be fabricated in a single piece, or can be cut after being fabricated in a large piece. First, a mask, a side, a protective layer are removed on a large piece of quartz crystal to form a complex array of convex portions, so that each - The group of convex portions includes one or two convex portions, and then the quartz crystal is cut into a plurality of electric quartz crystal vibrating sub-wafers, so that each of the piezoelectric quartz crystal blue sub-wafers has a group of convex portions. Figure 6 is a schematic view showing the production of a quartz vibrating finished product by masking the bump wafer in the present invention. As shown in the figure, the quartz oscillator finished product comprises a packaged underlayer 30 which is laminated, and the uppermost portion is utilized. The piezoelectric quartz vibrating sub-wafer 16 produced by the method of the present invention is provided with an electrode, a 6201032366 wiring, etc. (not shown), and the convex portion above the piezoelectric quartz vibrating sub-wafer 16 is the present invention. The convex portion generated by the money engraving method 14 » In summary, the structure of the piezoelectric quartz crystal oscillator chip provided by the present invention and the manufacturing method thereof are used for making a quartz wafer of a platform type, and the platform region is performed in a mask manner. By definition, the costly yellow light process can be eliminated and can be compatible with the conventional quartz wafer process, and the structure of the piezoelectric quartz vibration sub-wafer provided by the present invention is glued to the lower periphery of the convex portion, the main vibration area. In the convex portion, the oscillating wave is prevented from being lost from the point win, and the impedance of the piezoelectric quartz vibrating I seed crystal >1 is reduced by the structure of the convex portion, the process is simple, the processing time is short, and the cost is low, and Achieve good Sex. The above is only the embodiment of the present invention, and the scope of implementation of the present invention is determined. Therefore, it should be included in the scope of the patent application of the present invention. [Simple description of the figure] Fig. 1 is a flow chart of the prior art towel making power; 5 inch minus crystals #. 10 is a flow chart of the piezoelectric quartz vibrating sub-wafer produced in the present invention. Figure 3 is a schematic view showing the structure of the mask used in the present invention. FIGS. 4A and 4B are schematic views showing a single-sided convex portion in a mask manner in the present invention. 5A and 5B are schematic views showing the double-sided convex portion in a mask manner in the present invention. Fig. 6 is a view showing a circle in which a raised portion of a wafer is produced in a mask manner to form a quartz vibrating finished product in the present invention. Unexplained [Main component symbol description] 1〇 Quartz crystal 7 201032366 12, 12' Protective layer 14, 14, raised portion 16, 16, piezoelectric quartz oscillator chip 20 spacer 22 mask 24 plate (holder) 30 package bottom layer 〇 8