201028783 ' 六、發明說明： 【發明所屬之技術領域】 本發明涉及-種調焦模組及調焦模組的製造方法。 【先前技術】 隨著電子產品朝著小型化、微型化方向發展，微型數 位鏡頭模組已廣泛利於手機以及手提電腦等多項產品 中。然而由於微型數位鏡頭模組過於微小，傳統相機所使 ©用的調焦以及對焦功能的機構，如馬達以及齒輪等元件， 由於體積以及重量等限制’並不能運用於微型數位鏡頭模 組内=而大部分微型數位鏡頭模組都不具備調焦功能。、 ;Ik著人們物貝需求的增長，人們越來越希望一種具備 調焦功能的微型數字鏡頭出現。 八 魯 焦模組 【發明内容】有鑒於此，有必要提供一種結構緊凑、 積微小的調 二種難模組’其包括基座、保 片固定於所述伴拉駚u 兄乃尸坏適產兄 里.. '、、上，所述保持體與所述基座相針μ 置，所述保持體能夠相對所述基 =叹 所述基座哼罟古笙丄 土压，口蜆月九軸方向移動。 ㈣隹禮^ ’所述保持體橫截面係矩形，所 述凋焦摈組還包括彈性件 ^所 於所述保持體上，所、一 ，所述第二磁體固定 rr肢工所述第二磁體一 述彈性件呈長條狀 、 磁體相對，所 長條狀，所述彈性件包㈣—端部、第二端部 4 201028783 及至少一個“〔”型弯折，所述彈性件設置於所述保持體邊 緣’、所述彈性件的“〔”型彎折的兩條織與所述保持體邊 緣平行，所述彈性件的橫截面垂直於所述鏡片的光軸，所 述彈性件的第-端固定於所述保持體上，所述彈性件的第 二端固定於所述基座上，所述第一磁體及第二磁體中至少 有一個磁體極性可變。 ❹ 參 一種凋焦模組製造方法，其包括以下步驟：提供一個 =二晶圓’該第一晶圓具有一個第一晶圓第一表面及一個 :=曰圓第二表面；在第一晶圓第一表面—側採用鍍膜及 微影絲刻技術定義通光孔的位置；在第—晶圓第二表面 = Ξ =術製作第一絕緣層；在第一絕緣層上用先 磁體與外界連通的導線；利用賴技術製作第二絕=了 在第一絕緣層上湘微景彡光偏彳技術製作連接 :Γ:=導通槽;在第二絕緣層上利用微影技術；義 出再電鍍金屬製作第二磁體；根據定義 二=加工通光孔；提供一個第二晶圓，該第 面曰曰：㈣-晶圓第-表面及-個第二晶圓第二表 的位置’再電㈣製作出第一磁體;在第二晶== 側利用微影光刻技術製作彈性件及載鏡孔 :定將鏡孔"彈性件，對所： 本發明所提供的調焦模組通過第一磁體及第二磁體磁 5 201028783 性相斥或相吸來改變保持體與基座之間的距離，以此實現 鏡片位置的變化，達到調焦的功能，由於省去傳統的馬達 齒輪等零件’所以大大的減小了調焦模組的體積。 【實施方式】 下面將結合附圖，對本發明作進一步的詳細說明。 請參閱圖1及圖2’本發明實施方式提供的一種調焦模 組1 ’其包括基座10、框架21、保持體22、彈性體23、第 ❿二磁體24及鏡片30。所述鏡片30固定於保持體22上，所 述保持體22與所述基座10相對，所述保持體22能夠相對 所述基座10沿鏡片30光軸〇〇’方向移動。 本實施方式中，所述基座10係由半導體制程技術製成 的多層複合基板。所述基座10的橫截面係矩形。 所述基座10包括四個第一磁體U，所述第一磁體U 固定於基座10的第一表面10a上，所述基座1〇中心加工 瘳有圓形通光孔10b。戶/f述四個第一磁體u沿通光孔1〇b邊 緣呈矩形排列。所述第―磁冑n可以係電磁線圈或永磁 體。本實施方式中，所述第一磁體u係在基座10上利用 半導體制程電鑛銅製成的線圈。所述第—磁體丨〗具有兩個 電訊號輸入端子Ua、llb。所述電訊號輸入端子iia、 通過半導體制程在所述基座10内佈設的導電層與所述第一 磁體11連接。當.電，訊號輸入端子11a、lib接入不同極性的 電壓，所述第一磁體11產生不同的磁極性。 所述框架21、保持體22及彈性件23為一體結構。本 6 201028783 ^施方式中，所述框架21、保持體22及彈性件23通過半 =體制程利用朴工而成。所述框架21利用膠枯結於所述 基座ίο的電訊號輸入端子lla、llb上。 所述保持體22容置於所述框架21内。所述框架2i及 保持體22橫截面均為矩形。所述框架21與所述保持體22 之間通過所述彈性件23連接。所述保持體22包括第二表 面22a、載鏡孔22b及側s 22c，所述鏡# 3〇容置於所述 載鏡孔22以。本實施方式中，利用膠將所述鏡片％固定 於所述載鏡孔22b内。所述第二表面咖面向所述基座ι〇 的第-表面10a’所述載鏡孔22b中心、鏡片3〇中心及所 述基座H)的通光孔10b中心均位於同一光軸〇〇，上。所述 框架21包括内表面21a。 所述彈性件23連接於所述框架21與保持體22之間。 所述彈性體23呈長條狀，所述彈性件23的橫截面垂直於 所述鏡片30的光軸00，。所述彈性件23包括第一端2仏、 ❹第二端23b及至少一個“匚，，型彎折23c。所述彈性件 的型青折23c的兩條側邊23〇c、231c與所述保持體 22邊緣22c平行。本實施方式中，戶斤述彈性體23為長片狀 結構’且包含-個型㈣。所述彈性件23的第一端 23a固疋於所述保持體22侧面22c上，所述彈性件的第二 端23\岐於所述基座1()上。本實施方式中，所述彈性 23的第二端23b固定於所述框架21的内表面2U上。可以 理解，所述彈性件的第二端23b也可以固定於固定所述基 座10的鏡筒（圖中未標示）内。 7 201028783201028783 'VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for manufacturing a focusing module and a focusing module. [Prior Art] As electronic products are moving toward miniaturization and miniaturization, miniature digital lens modules have been widely used in mobile phones and laptops. However, since the miniature digital lens module is too small, the components of the focusing and focusing functions used by the conventional camera, such as the motor and the gear, are limited in size and weight, and cannot be used in the miniature digital lens module. Most of the miniature digital lens modules do not have the focus adjustment function. Ik is growing in demand for people's goods, and people are increasingly looking for a miniature digital lens with focusing function. Eight-Ruju Module [Invention] In view of the above, it is necessary to provide a compact and small-sized two-difficult module, which includes a pedestal, and a security plate fixed to the accompaniment. In the maternity brother: ',, the holding body and the pedestal phase pin, the holding body can be opposite to the base = sigh the base 哼罟 ancient earth pressure, mouth 蚬The axis moves in the direction of the moon. (4) 隹 ^ ^ 'the retaining body is rectangular in cross section, the detent group also includes an elastic member on the holding body, one, the second magnet fixed rr limbs said second The elastic member is in the form of a strip, a magnet, and a strip, and the elastic member (four) - the end portion, the second end portion 4 201028783 and at least one "[" type bent portion, the elastic member is disposed at the The holder edge ', the two wovens of the "["-shaped bend of the elastic member are parallel to the edge of the holder, the cross section of the elastic member is perpendicular to the optical axis of the lens, the elastic member The first end is fixed to the holding body, and the second end of the elastic member is fixed on the base, and at least one of the first magnet and the second magnet is of a variable polarity.一种 A method for manufacturing a dew point module, comprising the steps of: providing one = two wafers; the first wafer has a first surface of the first wafer and a: a second surface of the rounded surface; The first surface of the circle—the side is defined by the coating and lithography technique to define the position of the light-passing hole; the second surface of the first wafer = Ξ = the first insulating layer is fabricated; the first insulating layer is used with the first magnet and the outside Connected wires; using the Lai technology to make the second absolute = on the first insulating layer, Hunan micro-viewing light-biasing technology to make the connection: Γ: = conduction channel; using lithography technology on the second insulation layer; Electroplating metal to make a second magnet; according to definition 2 = processing through hole; providing a second wafer, the first surface: (4) - wafer first surface and - second wafer second table position ' again Electric (4) to produce a first magnet; on the second crystal == side using lithography technology to fabricate the elastic member and the mirror hole: the mirror hole "elastic member, the: the focusing module provided by the invention Changing the holding body and the base by the first magnet and the second magnet magnetic 5 201028783 The distance between, in order to achieve a change of the lens position to achieve the focusing function, due to eliminating conventional motor gear and other parts' so greatly reduces the volume of the focusing module. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. 1 and 2', a focus mode module 1' includes a base 10, a frame 21, a holder 22, an elastic body 23, a second magnet 24, and a lens 30. The lens 30 is fixed to the holder 22, and the holder 22 is opposed to the base 10, and the holder 22 is movable relative to the base 10 in the optical axis 〇〇' direction of the lens 30. In the present embodiment, the susceptor 10 is a multilayer composite substrate made of a semiconductor process technology. The base 10 has a rectangular cross section. The base 10 includes four first magnets U that are fixed to a first surface 10a of the base 10, the base 1 being centrally machined with a circular light-passing aperture 10b. The four first magnets u are arranged in a rectangular shape along the edges of the light-passing holes 1〇b. The first magnetic field n may be an electromagnetic coil or a permanent magnet. In the present embodiment, the first magnet u is a coil made of a semiconductor process electric ore copper on the susceptor 10. The first magnet has two electric signal input terminals Ua, 11b. The electrical signal input terminal iia is connected to the first magnet 11 by a conductive layer disposed in the susceptor 10 by a semiconductor process. When the electric signal input terminals 11a, lib are connected to voltages of different polarities, the first magnets 11 generate different magnetic polarities. The frame 21, the holding body 22, and the elastic member 23 are of unitary structure. In the embodiment of the present invention, the frame 21, the holding body 22, and the elastic member 23 are formed by using a half-institutional process. The frame 21 is glued to the electrical signal input terminals 11a, 11b of the base. The holder 22 is housed in the frame 21. The frame 2i and the retaining body 22 are both rectangular in cross section. The frame 21 and the holding body 22 are connected by the elastic member 23. The holder 22 includes a second surface 22a, a mirror hole 22b and a side s 22c, and the mirror #3 is disposed in the mirror hole 22. In the present embodiment, the lens % is fixed in the lens hole 22b by glue. The second surface coffee faces the center of the mirror hole 22b of the first surface 10a' of the pedestal ι, the center of the lens 3〇, and the center of the light transmission hole 10b of the susceptor H) are all located at the same optical axis. Hey, on. The frame 21 includes an inner surface 21a. The elastic member 23 is coupled between the frame 21 and the holder 22. The elastic body 23 has an elongated shape, and the elastic member 23 has a cross section perpendicular to the optical axis 00 of the lens 30. The elastic member 23 includes a first end 2仏, a second end 23b and at least one “匚, a type of bend 23c. The two sides 23〇c, 231c of the elastic member 23c of the elastic member 23c The edge 22c of the holder 22 is parallel. In the present embodiment, the elastic body 23 is a long sheet-like structure and includes a type (four). The first end 23a of the elastic member 23 is fixed to the holder 22 On the side surface 22c, the second end 23 of the elastic member is disposed on the base 1 (). In the embodiment, the second end 23b of the elastic member 23 is fixed to the inner surface 2U of the frame 21. It can be understood that the second end 23b of the elastic member can also be fixed in a lens barrel (not shown) for fixing the base 10. 7 201028783
八所述彈性件23由於其形狀係“几,，字形，有力學知識 分析可以知道在長軸方向，即在χ方向剛性最強，而在短 車方向即圖中的γ軸方向稍弱。在垂直於橫截面的Ζ方 向剛欧最差’最容易產生變形。由此’該彈性件23連接在 所述保持體22及框架21之間時，可以保證保持體22在鏡 片30的光軸00,方向受到报小的力就可以實現鏡片儿的 移動，從而用於進行調焦。而由於彈性件23設計成“几” 字型，可以保證彈性件23在與鏡片3〇光軸〇〇,垂直的平 面上剛性強，從而在_發生晃動時有效的減低鏡片3〇的 偏移。在實現結構微型化的同時增強了抗抖動的能力。 請參閱圖3、圖4及圖5。所述第二磁體24可以係電 磁線圈或永磁體。本實施方式中，所述第二磁體24採用永 磁體制成的磁性薄膜。所述第二磁體以可以利㈣結劑枯 結於所述保持體22上，或利用機械力固定於㈣體^上。 本實施方式中’在所述保持體22的表面❿上利用電鍍鑛 一層具有磁性的鎳薄膜作為所述第二磁體％。 該調焦模組i固定於鏡筒（圖中未標示”。當所述 调焦模組1工作時’在第—磁體11的電訊號輸人端子lla、 11b接入不同極性的電壓，使得所述第一磁體n產生不同 的:極=由於所述第二磁體24也帶有磁極性，根據同性 相斥，異性相吸的原理，所述第二磁體24由於受到吸引或 排斥’從而！近或遠離所述第—磁體U，由此帶動鏡片％ 沿光轴00則後移動，從而用 本發明還提供-種調焦模造方法，其包_ 201028783 下步驟： (a)請參閲圖6,首先提供一個第一晶圓·，該第 -晶圓200具有第-晶圓第—表面加及第—晶圓第 面 202 ; e ⑴請參閲圖7’在第一晶圓第一表面2〇1 一側採用 鑛膜及微影光㈣技術定㈣光孔⑽的位置。首先在所 述第一晶圓第一表面201上形成一層第一金屬薄膜203。本 實施方式中，所述第一金屬薄膜2〇3採用金屬銘。該第一 金屬薄膜203可以採用濺鍍或蒸鑛的方式形成在所述第一 晶圓第-表面201上·。本實施方式中，所述第一金屬薄膜 2〇3採用濺錢的方式形成在所述第一晶圓第一表面洲 士’再通過微影光姓刻技術定義出通光孔⑽的位置。該 定義通光A l〇b的步驟具體包括以下幾個過程。首先，‘ =述第-金屬薄膜2〇3上塗布一層第一光阻劑層綱，所述 一絲劑204可以係正型光阻劑，也可以係負型光阻劑。 本實轭方式中，所述第一光阻劑層2〇4係負型光阻劑。對 3第—光阻劑層綱利用預先繪製的有圖案的光罩（圖 進行曝光’本實施方式中，將預先綠製有圖案 罩錢於所述第一光阻劑層204 -側的上方，採用黃 第^阻劑層綱進行曝光，再進行顯影。本實 》，採用耦合電漿蝕刻法將光罩的圖案轉寫到第一 7劑層咖上。最後進械刻，形成卜凹槽n 205 j以通過濕法化學蝕刻或耦合電漿蝕刻。本實施方 工，知用耦合電漿蝕刻第一金屬薄膜203，形成第一凹槽 201028783 2〇5定義出通光孔_的位置 (心參閲圖8,在第一晶：表二劑層：。 鑛臈技術製作第1緣層H ^侧^用 ：：：-：^ 積的方Hm，所述1絕緣層娜採用化學氣相沉 後2二')#參閱圖9,在第—絕緣層細上先#刻定義導 線職的位置再链金屬膜形成導線的方法製作第磁^導 與外界連通的導線2，。本實施方式中， 在m導第二磁體與外界的導線208a的位置。首先 氮rr206上塗布-層第二光二 ,这第一先阻劑2〇7可以係正型光阻劑，也可以孫査 光阻r對中’所述第二光阻劑層2〇7係負型 罩(圖中未標;繪製的有圖案的光 有電路圖的#置加曝先’本實方式中，將預先繪製 方：用=:於所述第二光阻劑層2。7 -側的上 顯影。本;施方=第二光阻劑層斯進行曝光，再進行 _寫到第二::劑;= 製作導線2G8a= = ^ _的位置。 薄膜_採用金屬麵鍍去第"金屬/ V08，所述第二金屬 -絕緣層206上的第劑層2〇7,留下鑛於第 外界的導線201 屬薄膜2〇8,形成導通第二磁體與 (e)6月參閱圖…利用鍍膜技術製作第二絕緣層209。 201028783 方式中’採用化學氣相沉積的方法鍍 膜作為第二絕緣層29〇。 乳化矽4 (f)请參閱圖1 、+、哲 u u在所逃第二絕緣層209上利用; 光蝕刻技術製作連接於邋綠〇nQ 〇 〜用破衫 、！柚川Μ &與第-磁體U之間的導 通才日21 〇 a。首先，方张；+、结_ 、 斤述第一絕緣層209上塗布一 a筮二 光阻劑層210，所述第.二# θ乐二 弟一先阻劑層210可以係正型光阻劑， 也可以係負型光阻劑。太眚始士 *山 ^ 別本實施方式中，所述第三光咀劑层 210係負型光阻劑。對上f笛一 知丨層 的有α第二光阻劑層210利用預先繪製 的有，案的先罩（圖中未標示）進行曝光。本實施方式中， 將預先緣製有圖案的光罩架設於所述第三光阻劑層2ι〇 一 側的上方，採用黃光光源對第三光阻劑層21G進行曝光， 再進行顯影。本實;4 Λ 頁施方式中，採用耦合電漿蝕刻法將光罩 的圖案轉寫到第三光阻劑層21f) μ — *山播 劁層210上，定義出導通槽210a的 位置。最後進行银刻，在所、+，赞 在所述第一絕緣層209上形成導通 槽210a。韻刻第二絕续：禺 參 、9 209可以通過濕法化學蝕刻或耦 合電聚触刻。本實施方垚由 ,Λ m .. 气中’採用搞合電漿姓刻第二絕緣 層209，形成導$槽2i〇a。 (g ) β月參閲圖.12，利用料旦3杜啦^t枚 不J用微衫技術疋義出第一磁體n 及電訊號輸入端子^ ^According to the shape of the elastic member 23, the shape of the elastic member 23 can be known in the long axis direction, that is, the rigidity in the radial direction is the strongest in the longitudinal direction, and is slightly weak in the direction of the short vehicle, that is, the γ axis in the figure. The direction perpendicular to the cross-section of the crucible is the worst of the 'Easily deformed. Thus, when the elastic member 23 is coupled between the holder 22 and the frame 21, the optical axis 00 of the holder 22 at the lens 30 can be ensured. The direction of the lens is small, so that the movement of the lens can be realized, thereby being used for focusing. Since the elastic member 23 is designed in a "several" shape, the elastic member 23 can be ensured to be in the axis of the lens 3, The rigidity of the vertical plane is strong, which effectively reduces the offset of the lens 3 when the sway occurs. The structure is miniaturized while enhancing the anti-jitter ability. Please refer to FIG. 3, FIG. 4 and FIG. The second magnet 24 may be an electromagnetic coil or a permanent magnet. In the embodiment, the second magnet 24 is a magnetic film made of a permanent magnet. The second magnet is dried in the holder. 22, or fixed to the (four) body by mechanical force In the present embodiment, a nickel film having a magnetic layer of electroplating is used as the second magnet % on the surface of the holding body 22. The focusing module i is fixed to the lens barrel (not shown) When the focusing module 1 is in operation, the electric signal input terminals 11a, 11b of the first magnet 11 are connected to voltages of different polarities, so that the first magnets n are different: pole = due to the The second magnet 24 also has a magnetic polarity. According to the principle of the same-sex repulsive, the opposite-phase attraction, the second magnet 24 is attracted or repelled 'by!! Near or away from the first-magnet U, thereby driving the lens% Moving along the optical axis 00, so that the present invention also provides a method of focusing molding, which includes the following steps: (a) Please refer to FIG. 6, first providing a first wafer, the first crystal The circle 200 has a first-wafer first surface plus a first wafer first surface 202; e (1) Please refer to FIG. 7' using a mineral film and lithography (four) technology on the first surface 2〇1 side of the first wafer Positioning (4) the position of the light hole (10). First, forming a first metal thin film on the first surface 201 of the first wafer The film 203. In the embodiment, the first metal film 2〇3 is made of metal. The first metal film 203 may be formed on the first surface of the first wafer 201 by sputtering or steaming. In this embodiment, the first metal film 2〇3 is formed on the first surface of the first wafer by using a splashing method, and the position of the light-passing hole (10) is defined by the micro-photo-lighting technique. The step of defining the pass light A l〇b specifically includes the following processes. First, a layer of the first photoresist layer is coated on the metal film 2〇3, and the wire agent 204 can be positive type. The photoresist may be a negative photoresist. In the conjugate mode, the first photoresist layer 2〇4 is a negative photoresist. The 3rd photoresist layer is pre-drawn. A patterned mask (exposure in the drawing). In the present embodiment, a pre-green patterned pattern is overlaid on the side of the first photoresist layer 204 side, and exposure is performed using a yellow resist layer layer. Development is carried out. In this paper, the pattern of the reticle is transferred to the first 7-layer layer coffee by a coupled plasma etching method. Finally, the groove n 205 j is formed by wet chemical etching or coupled plasma etching. In the embodiment, it is known that the first metal film 203 is etched by the coupling plasma to form a first groove 201028783 2〇5 to define the position of the light-passing hole _ (see FIG. 8 in the first crystal: the second layer of the table) The mineral layer technology produces the first edge layer H ^ side ^:::-:^ The square of the product Hm, the 1 insulation layer Na after chemical vapor deposition 2 2 ') # see Figure 9, in the first - The insulating layer is finely first. The method of defining the position of the wire and re-chaining the metal film to form the wire is to make the wire 2 which is connected to the outside. In the present embodiment, the position of the second magnet and the external wire 208a is guided at m. First, the second light II is coated on the nitrogen rr206, and the first first resist 2〇7 may be a positive photoresist, or the solar resistance may be a pair of the second photoresist layer 2〇7 negative type. Cover (not shown in the figure; drawn patterned light with circuit diagram #置增 exposure first) In this real mode, the square will be drawn in advance: with =: on the second photoresist layer 2. 7 - side Upper development; this; the application of the second photoresist layer is exposed, and then _written to the second:: agent; = the position of the wire 2G8a = = ^ _. The film _ is plated with a metal surface " Metal / V08, the first layer 2〇7 on the second metal-insulating layer 206, leaving the outer conductor 201 to be a thin film 2〇8, forming a second magnet and (e) seeing the figure in June ...the second insulating layer 209 is formed by the coating technique. 201028783 In the method, the method of chemical vapor deposition is used as the second insulating layer 29〇. Emulsified 矽4 (f) Please refer to Fig. 1, 、, 哲uu in the escape The second insulating layer 209 is used; the photo-etching technique is used to make a connection between the green 〇nQ 〇~ with a broken shirt, the pomelo Μ & and the first magnet U 21 〇a. A sheet of photoresist layer 210 is coated on the first insulating layer 209, and the first resist layer 210 of the second layer can be a positive photoresist. It is also possible to use a negative-type photoresist. In the present embodiment, the third photo-cavity layer 210 is a negative-type photoresist. The second photoresist layer 210 is exposed by a pre-painted hood (not shown). In the embodiment, a mask having a pattern is preliminarily mounted on the third photoresist layer. On the upper side of the 2 〇 side, the third photoresist layer 21G is exposed by a yellow light source, and then developed. In the fourth embodiment, the pattern of the reticle is transferred to the reticle by means of coupled plasma etching. The third photoresist layer 21f) μ - * on the mountain seed layer 210, defines the position of the via 210a. Finally, silver etching is performed, and a conduction groove 210a is formed on the first insulating layer 209. The second continuation of rhyme: 禺 , 9 209 can be etched by wet chemical etching or coupled to electro-convex. In the embodiment, the second insulating layer 209 is formed by using the plasma paste to form a guide groove 2i〇a. (g) β month see Fig. 12, using the material Dandan 3 du la ^ t piece No J micro-shirt technology to deny the first magnet n and the telecommunication input terminal ^ ^
Ub的位置，再電鍍金屬製作第一 磁體11及電訊號輸入端不n 1.1L· 机别八鳊子Ua、Ub。由於銅結合強度很差， 為使隨後的銅電鍍層結合车同。 σ牛固。本實施方式中，鍵一層第 電鑛起始層211。所述第一電鑛起始層叫可以係金或 欽本貝施方式中，所述第一電鑛起始層211採用金。Ub position, and then electroplated metal to make the first magnet 11 and the electric signal input end is not n 1.1L · machine 鳊 鳊 U U, Ub. Due to the poor bonding strength of copper, the subsequent copper plating layer is combined with the same. σ cattle solid. In the present embodiment, a layer of the first ore initial layer 211 is bonded. The first electric ore starting layer may be in the form of a gold or a smear, and the first electric ore starting layer 211 is made of gold.
通過微影技術定義山哲__ Μ M q ^ U 一磁體11的位置。該制程包 201028783 括.首先在所述第一電鍍起始層 劑層m，所述第四光阻劑層2 _—層第四光阻 以係負型光阻劑。本實施方式中27:第，^ 係負型光阻劑。對上述第四光阻劑212 右阁安从止®, w層212利用預先繪製的 圖案的先罩（圖中未標示）進行曝光4 將預先繪製有線圈圖案的光罩 ^ ’ 犯一側的上方，採用黃光先H第又於/斤述第四光阻劑層 ί罩== 方式中，採用輕合電㈣刻法將 先罩的線圈圖案轉寫到第四光阻劑層212上形成用 成第一磁體11的線圈槽212a。 ； :所述線圈槽213内電鍍鋼形成第一磁體n。本實施 =中=述線圈槽213内電鍍銅形成線圈作為第一磁 =去=四光阻劑層212，刻第一電鍍起始層2ιι， 留下第一钱起始層211被第-磁體Π覆蓋的部分。在第 -磁體11上加工電訊號輸入端子lla、llb。 第 (h)請參_ 13，根據定義出的通光孔1Gb的位置加 工通先孔1〇卜本實施方式中，根據步驟b定義出的通光孔 l〇b的位置，在备個其亦“丄 成基座10。基座1〇 _心開孔形成通光孔⑽，製 S · (〇明參閱圖14，提供一個第二晶圓3〇〇，該二曰 圓·具有-個第二晶圓第一表面301及一個第二晶；第曰 一表面302。 (J)明參閱圖15，通過微影技術定義出金屬層的位 再電鑛錄製作出第二磁體24。為使隨後的錄電鑛層結 12 201028783 合效果更好，在所述第二晶 4^ ^ λλ a 第表面3〇丨上形成第二電 緞起始層302,所述第二電 ^电 眚絲古由.罨鍍起始層302可以係金或鈦。本 ^ 述第二電鍍起始層3〇2採用妙 微影技術定義出第-磁俨 、，^後通過 先，在所诚笛Ϊ 的位置。該微影财包括··首 在斤边第一電鍵起始層302 F·淨;?fc· m. λ*· 3〇3。所述第五光阻劑二!^塗布-層第五光阻劑層 %丨d層303可以係正型光阻劑， 2光阻劑。本實施方式中，所述第五光阻齊mThe position of the mountain __ Μ M q ^ U a magnet 11 is defined by lithography. The process package 201028783 includes first the first plating initiation layer layer m, and the fourth photoresist layer 2_-layer fourth photoresist is a negative photoresist. In the present embodiment, 27: the first type is a negative type resist. For the fourth photoresist 212, the right layer of the right barrier, the w layer 212 is exposed by a hood (not shown) of a pre-drawn pattern, and the reticle with the coil pattern drawn in advance is used. Above, using the yellow light first H and then the fourth photoresist layer ί cover == mode, using the light and electric (four) engraving method to transfer the coil pattern of the first cover to the fourth photoresist layer 212 for forming The coil groove 212a of the first magnet 11 is formed. ; : The coiled steel in the coil groove 213 forms a first magnet n. In the present embodiment, the copper coil is formed in the coil groove 213 to form a coil as the first magnetic=de=four photoresist layer 212, and the first plating starting layer 2 is etched, leaving the first money starting layer 211 to be the first magnet. The part covered by Π. The electric signal input terminals 11a, 11b are processed on the first magnet 11. (h) Please refer to _13, and according to the defined position of the light-passing hole 1Gb, the through-hole 1 is processed. In the present embodiment, the position of the light-passing hole l〇b defined in step b is prepared. Also, the pedestal 10 is formed. The pedestal 1 〇 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a second wafer first surface 301 and a second crystal; a second surface 302. (J) Referring to Figure 15, the second magnet 24 is made by re-mineral recording of the metal layer defined by lithography. Subsequent recording layer 12 201028783 has a better effect, forming a second electrospinning starting layer 302 on the second surface 4^^ λλ a first surface 3〇丨, the second electric wire The ruthenium-plated starting layer 302 can be made of gold or titanium. The second electroplating starting layer 3 〇 2 defines the first magnetic enthalpy by using the lithography technique, and then passes through the first, in the celestial flute The position of the micro-film includes: · first in the jin side first key start layer 302 F · net; ? fc · m. λ * · 3 〇 3. The fifth photoresist two! ^ coating - layer The fifth photoresist layer % 丨d layer 303 can a positive photoresist, a photoresist. In the embodiment, the fifth photoresist is m
=二對上述第五光阻劑層3〇3利用 有： f的先罩（圖中未標示）進行曝光。本實施方式中，將Ξ 、·’曰衣有圖案的光罩架設於所述第五光阻劑層如一側的 上方，採用黃光光源對第五綠劑層則進行曝光， 用於形成第二磁體24的第二凹槽遍。在所述第二凹槽 3〇3a内電鍍鎳，去除第五光阻劑層3〇3及第五光阻劑層刊3 下對應的部分第二電鍍起始層302，形成第二磁體24。= Two pairs of the above fifth photoresist layer 3〇3 are exposed by using a first cover (not shown) of f. In this embodiment, a mask having a pattern of Ξ, 曰 架 is mounted on one side of the fifth photoresist layer, and the fifth green layer is exposed by a yellow light source for forming The second groove of the two magnets 24 passes. Nickel is electroplated in the second recess 3〇3a, and a portion of the second electroplating starting layer 302 corresponding to the fifth photoresist layer 3〇3 and the fifth photoresist layer 3 is removed to form the second magnet 24 .
(k)請參閱圖16，利用微影光刻技術製作彈性件u 及載鏡孔22b。為使隨後的鋁電鍍層結合效果更好，電鍍第 三電鍍起始層304。本實施方式中，μ一層第三電鍍起始層 3〇4。所述第三電鍍起始層3〇4可以係金或鈦。本實施方^ 中’所述第三電鑛起始層304採用金。 在第二晶圓第二表面302上形成一層金屬鋁的第三金 屬薄膜305 ;該金，展鋁可以採用濺鍍或蒸鍍的方式進行。本 實施方式中，所述第三金屬薄膜3〇5採用濺鍍的方式進行 鍍膜。通過微影光刻技術定義出彈性件23、載鏡孔22b及 框架21的位置。通過微影光刻技術定義出彈性件23、載鏡 13 201028783 孔22b及框架21的位置。該微影光刻制程包括：首 述第二金屬薄膜305上塗布一層第六光阻劑層3〇6，所述 $阻劑層306可以係正型光阻劑，也可以係負型光阻劑。 實施方式中，所述第六光阻劑層雇係負型光阻劑 上述第六光阻劑層306利用預先繪製的有圖案的 進行曝光。本實施方式中，將預先纷製有圖案 的先罩架設於所述第六絲劑層则一㈣上方 ❹？光源對第六光阻劑層3〇6進行曝光。再進行顯影，本； 把方式中，採用趣合電聚蚀刻法將光罩的圖案轉 =阻劑層306上。最後進行触刻，形成第三凹槽斯。料 二：ΠΓ7可以通過濕法化學或輕合電聚進純刻。本 :凹样斯3輕合電隸刻第三金屬薄膜3°5’形成第 ^凹槽307’疋義出彈性件23、載鏡孔咖及框架η的位 ❺。在本所實Γ方又起始,304上形成第四金屬薄膜 通過機影伞w式所述第四金屬薄膜308材料採用鋁。 第四令二X,技術定義出彈性體23的形狀。首先，在所述 屬相烟上塗布—層第七光阻劑層3.所述第七 ==可以係正型光阻劑’也可以係負型光阻劑。 上述笛所述第七光阻劑層309係負型光阻劑。對 中：椤厂;阻巧層309利用預先繪製的有圖案的光罩（圖 的光^設本實施方式中’將預先綠製有圖案 光光源對第六光阻^光阻劑層—側的上方，採用黃 先阻刎層306進行曝光。再進行顯影，形成 14 201028783 彈性體凹槽309ae本實施 光星的閤安姑命以杜 如用耦合電漿蝕刻法將 先罩的圖案轉寫到第七光阻劑層烟 定義出彈性體的23位置。本實施…最後進仃蝕刻’ 屬彻域^ 貫％方式中，分別蝕刻第四金 屬溥膜308、第三電鍍起始屏μ ^ 貼益古，够入， 定義出彈性體的23的形 狀。蝕刻第四金屬薄膜308可 電隸刻。本實施方式巾，㈣=^化學_或麵合 四金屬薄膜谓。 用耦-電聚蝕刻技術蝕刻第 敍刻形成彈性件23、載鏡孔B J彡 戰鏡孔22b及框架21。本實施方 3Q7_第二晶圓’加工出彈性體 23的厚度及谷置鏡片3〇的載鏡孔咖。再利用利用彈性體 凹槽309a姓刻第二晶圓3〇〇形成彈性體23及週邊的框架 21 〇 去除第七光阻劑層3G9,去除第三電鍍起始層遍 膜及第三金屬薄膜305。 (1)請參閱圖Π，提供一個鏡片3〇,將鏡片％固定于 #載鏡孔22bM。本實施方式中，利用膠將所述鏡片％固定 於所述載鏡孔22b内。 ⑽請參閱圖18，將彈性件23—端相對所述基座ι〇 固定，製成調焦模組1。本實施方式中，由於所述彈性件 23的第二端23b與所述框架21相連接，所以利用膠將框架 21固定於所述基座1〇的電訊號輸入端子Ua、丨^上。所 述第二磁體24與所述第一磁體u相對。 通過該制程，可以製作出結構緊凑，體積微小的調焦 模組1。 - 15 201028783 另外，本領域技術人員可在本發明精神内做其他變 化，但是’凡依據本發明精神實質所做的變化，都應包含 在本發明所要求保護的範圍之内。 【圖式簡單說明】 圖1為本發明實施方式提供的調焦模組的示意圖； 圖2為圖1的調焦模組的分解圖； 圖3為圖1的調焦模組未通電的狀態示意圖； 圖4為圖1的調焦模組的保持體被排斥運動的示意圖； 圖5為圖1的調焦模組的保持體被吸引運動的示意圖； 圖6至圖1 8為本發明實施方式提供的調焦模組的製造 方法的示意圖。 【主要元件符號說明】 調焦拉組 1 基座 10 基座第一表面 10a 圓形通光孔 10b 第一磁體 11 電訊號輸入端子 11a 黪 lib 框架 21 内表面 21a 保持體 22 保持體第二表面 22a 載鏡孔 22b 保持體側面 22c 彈性件 23 彈性件第一端 23a 彈性件第二端 23b “C”型彎折 23c “匚”型彎折 230c、231c 第二磁體 24 16 201028783(k) Referring to Fig. 16, the elastic member u and the mirror hole 22b are formed by photolithography. In order to make the subsequent aluminum plating layer bonding better, the third plating starting layer 304 is plated. In the present embodiment, μ is a third plating initiation layer 3〇4. The third plating initiation layer 3〇4 may be gold or titanium. In the embodiment, the third electric ore starting layer 304 is made of gold. A third metal film 305 of metal aluminum is formed on the second surface 302 of the second wafer; the gold, the aluminum can be deposited by sputtering or evaporation. In the present embodiment, the third metal thin film 3〇5 is plated by sputtering. The positions of the elastic member 23, the mirror hole 22b, and the frame 21 are defined by lithography. The position of the elastic member 23, the carrier 13 201028783 hole 22b and the frame 21 is defined by lithography. The lithography process includes: coating a second photoresist film 305 on the second metal film 305, the resistive layer 306 may be a positive photoresist or a negative photoresist. Agent. In an embodiment, the sixth photoresist layer employs a negative photoresist. The sixth photoresist layer 306 is exposed using a pre-drawn patterned pattern. In the present embodiment, the hood having the pattern in advance is placed over the first (four) layer of the sixth agent layer. The light source exposes the sixth photoresist layer 3〇6. Further, in the mode, the pattern of the photomask is transferred to the resist layer 306 by using an electro-convex etching method. Finally, the contact is made to form a third groove. Material 2: ΠΓ7 can be integrated into pure engraving by wet chemical or light combined electricity. The concave portion 3 is lightly engraved to form a third metal film 3° 5' to form a second recess 307' to define the position of the elastic member 23, the mirror hole, and the frame η. At the beginning of the practice, a fourth metal film is formed on 304. The fourth metal film 308 is made of aluminum. The fourth command, X, defines the shape of the elastomer 23. First, the seventh photoresist layer is coated on the genus of the genus. The seventh == can be a positive photoresist or can be a negative photoresist. The seventh photoresist layer 309 of the above flute is a negative photoresist. Centering: 椤 factory; 308 layer using a pre-drawn patterned reticle (the light of the figure is set in the present embodiment, 'pre-green patterned light source to the sixth photoresist ^ photoresist layer - side Above, the yellow first blocking layer 306 is used for exposure. Then development is carried out to form 14 201028783 Elastomer groove 309ae. The implementation of the light star's Heian's life is to use the coupled plasma etching method to transfer the pattern of the first cover to the first The seven photoresist layer smoke defines the 23 position of the elastomer. This embodiment...the last etch etch' belongs to the ^% mode, and the fourth metal ruthenium film 308, the third plating start screen μ ^ Ancient, enough to define the shape of the elastomer 23. The etched fourth metal film 308 can be electrically engraved. This embodiment of the towel, (4) = ^ chemical _ or faceted four metal film said. With coupling - electric poly etching technology The etching is performed to form the elastic member 23, the mirror hole BJ, the mirror hole 22b and the frame 21. The 3Q7_second wafer of the present embodiment processes the thickness of the elastic body 23 and the lens hole of the lens lens 3 Reusing the elastomer groove 309a to etch the second wafer 3 to form an elastomer 23 and the surrounding frame 21 〇 removing the seventh photoresist layer 3G9, removing the third plating starting layer and the third metal film 305. (1) Please refer to the figure, providing a lens 3〇, fixing the lens % In the present embodiment, the lens % is fixed in the lens hole 22b by means of glue. (10) Referring to Fig. 18, the elastic member 23-end is fixed relative to the base ι. The focusing module 1 is formed. In the embodiment, since the second end 23b of the elastic member 23 is connected to the frame 21, the frame 21 is fixed to the electric signal input of the base 1 by glue. The second magnet 24 is opposite to the first magnet u. Through the process, a compact and small-sized focusing module 1 can be fabricated. - 15 201028783 In addition, the technology in the field Other variations may be made by those skilled in the art, but any changes made in accordance with the spirit of the present invention are intended to be included in the scope of the present invention. Schematic diagram of the focusing module provided by the method; FIG. 2 is the schematic of FIG. FIG. 3 is a schematic view showing a state in which the focusing module of FIG. 1 is not energized; FIG. 4 is a schematic view showing a retracting movement of the holding body of the focusing module of FIG. 1; FIG. 6 to FIG. 18 are schematic diagrams showing a method for manufacturing a focus adjustment module according to an embodiment of the present invention. [Description of main component symbols] Focusing pull group 1 Base 10 base Seat first surface 10a circular light-passing hole 10b first magnet 11 electrical signal input terminal 11a 黪lib frame 21 inner surface 21a holding body 22 holding body second surface 22a mirror hole 22b holding body side 22c elastic member 23 elastic member One end 23a elastic member second end 23b "C" type bending 23c "匚" type bending 230c, 231c second magnet 24 16 201028783
侧邊 鏡片 30 第一晶圓 200 第一晶圓第一 201 第一晶圓第二 表 202 表面 面 第一金屬薄膜 203 第一光阻劑 204 第一凹槽 205 第一絕緣層 206 第二光阻劑層 207 第二金屬薄膜 208 導線 208a 第二絕緣層 209 第三光阻劑層 210 通槽 210a 第一電鐘起始 211 第四光阻劑層 212 層 線圈槽 212a 苐二晶圓 300 第二晶圓第一 301 第二晶圓第二 表 302 表面 面 第五光阻劑層 303 第二凹槽 303a 第三電鍍起始 304 第三金屬薄膜 305 層 第六光阻劑層 306 第三凹槽 307 第四金屬薄膜 308 第七光阻劑層 309 彈性體凹槽 309a 17Side lens 30 First wafer 200 First wafer First 201 First wafer Second table 202 Surface surface First metal film 203 First photoresist 204 First groove 205 First insulating layer 206 Second light Resistive layer 207 second metal film 208 wire 208a second insulating layer 209 third photoresist layer 210 through groove 210a first electric clock start 211 fourth photoresist layer 212 layer coil groove 212a second wafer 300 Second wafer first 301 second wafer second table 302 surface surface fifth photoresist layer 303 second groove 303a third plating start 304 third metal film 305 layer sixth photoresist layer 306 third concave Slot 307 fourth metal film 308 seventh photoresist layer 309 elastomer groove 309a 17