201028452 六、發明說明： 【發明所屬技彳，餘領域】 先前申請案之參考 本專利申請案主張於2008年1〇月30日提出申請之美國 專利臨時申請案第61/109,528號的優先權，其全文併入本案 做為參考。 本發明係有關於促進基材與圖案化層間黏著的技術。 L 前冬好]I φ 發明背景 奈米-製造包括製造具有特徵為100奈米或更小等級之 #常小結構的製造。具有相當衝擊之奈米_製造的一應用為 積體電路的製造。半導體製造工業持續致力於較大的產能 同時增加在一基材上每單位面積的電路；因此，奈米_製造 的重要性增加。奈米製造提供較大的製程控制，同時允許 於形成之結構的最小特徵尺寸之持續降低。已使用奈米·製 造發展之其他領域包括生物科技、光學技術、機械系統及 p 其相似者。 在今日使用的奈米-製造技術之一範例通常為如壓印 微影。例示之壓印微影製程揭露於數個文獻中，如美國專 利公開第2004/006^%號、美國專利公開第2〇〇4/〇〇65252 號及美國專利第6,936，194號，其等皆併入本案做為參考。201028452. </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The full text is incorporated into this case for reference. The present invention relates to techniques for promoting adhesion between a substrate and a patterned layer. BACKGROUND OF THE INVENTION Nano-manufacturing includes the manufacture of a #常小结构 having a rating of 100 nm or less. One application of nanotechnology with considerable impact is the manufacture of integrated circuits. The semiconductor manufacturing industry continues to focus on greater capacity while simultaneously increasing the number of circuits per unit area on a substrate; therefore, the importance of nano-manufacturing increases. Nanomanufacturing provides greater process control while allowing for a continuous reduction in the minimum feature size of the resulting structure. Other areas in which nanotechnology has been developed include biotechnology, optical technology, mechanical systems, and the like. One example of nano-manufacturing technology used today is typically embossing lithography. The exemplified embossing lithography process is disclosed in several documents, such as U.S. Patent Publication No. 2004/006, No., U.S. Patent Publication No. 2/4,652,522, and U.S. Patent No. 6,936,194. Both are incorporated into this case for reference.
揭露於前述美國專利公開案及專利的壓印微影包括在 ，可成形層(可聚合)中形成-離隙圖案並對應該離隙圖案 移轉圖案至在下層的基材。此基材可耦接至一移動平台Z 3 201028452 獲得預期之定位而促進圖案化製程。圖案化製程使用與該 基材分離隔開的一模板且在模板與基材間施用一可成形液 體。固化此可成形液體以形成一剛性層，其具有與該可成 形液體接觸之模板表面的形將一致的圖案。在固化後，此 模板由剛性層分離，故該模板與基材間隔分離。此基材與 該固化層接著進行額外的製程以移轉一離隙圖像至該基 材，其對應於在固化層的圖案。 t發明内容3 發明概要 依據本發明之一實施例，係特地提出一種施用一黏著 層至一基材的方法，其包含放置該基材入一處理室；注入 一洗淨劑至該處理室；排空該處理室的該洗淨劑；及注入 該黏著材料至該處理室，該黏著材料置於該基材上。 依據本發明之又一實施例，係特地提出一種施用黏著 層至基材的方法，其包含：沉積一中間層至該基材上；放 置該基材入一處理室；排空該處理室的氣體；注入一洗淨 劑至該處理室；排空該處理室的該洗淨劑；注入該黏著材 料至該處理室，該黏著材料沉積於該基材上；傳送水蒸氣 至處理室中；及排空該處理室的水。 依據本發明之再一實施例，係特地提出一種調節一基 材的方法，其包含：施用一黏著層至一基材上，其藉由： 放置該基材入一處理室，排空該處理室的氣體，注入一洗 淨劑至該處理室，排空該處理室的該洗淨劑，注入該黏著 材料至該處理室，該黏著材料沉積於該基材上，傳送水蒸 201028452 氣至該處理室中並排空該處理室的水；及壓印該基材。 圖式簡單說明 本發明提供一實施例的描述並配合在附圖中說明的實 施例，故本發明可更詳盡的瞭解。然而，需注意附圖僅為 說明本發明之-典型實施例，因此不應視為用於限制本發 明之範疇。 第1圖說明本發明之-實施例賴料統之簡單側視圖。 第2圖說明顯示在第1圖之基材的簡單側視圖，其具有 一圖案化層於其上。 第3圖說明用於原位臭氧處理一基材以施用黏著材料 的方法之流程圖。 - 第4圖說明本發明之一實施例的處理室之簡單側視圖。 第5圖為以原位臭氧處理與無原位臭氧處理的黏著圖 式比較。 第6圖說明一具有黏著層於其上的基材。 φ 第7圖說明在一基材中的圖案形成之簡單側視圖。The embossing lithography disclosed in the aforementioned U.S. Patent Publications and Patents includes forming a - relief pattern in a formable layer (polymerizable) and transferring the pattern to the underlying layer to the underlying substrate. The substrate can be coupled to a mobile platform Z 3 201028452 to achieve the desired positioning to facilitate the patterning process. The patterning process uses a template separated from the substrate and a formable liquid is applied between the template and the substrate. The formable liquid is cured to form a rigid layer having a pattern that will conform to the shape of the stencil surface in contact with the formable liquid. After curing, the template is separated by a rigid layer so that the template is spaced apart from the substrate. The substrate and the cured layer are then subjected to an additional process to transfer a relief image to the substrate corresponding to the pattern in the cured layer. SUMMARY OF THE INVENTION Summary of the Invention In accordance with one embodiment of the present invention, a method of applying an adhesive layer to a substrate is provided, comprising placing the substrate into a processing chamber; injecting a cleaning agent into the processing chamber; Evacuating the cleaning agent of the processing chamber; and injecting the adhesive material into the processing chamber, the adhesive material being placed on the substrate. According to still another embodiment of the present invention, a method for applying an adhesive layer to a substrate is specifically provided, comprising: depositing an intermediate layer onto the substrate; placing the substrate into a processing chamber; and evacuating the processing chamber a gas; injecting a detergent into the processing chamber; evacuating the cleaning agent of the processing chamber; injecting the adhesive material into the processing chamber, the adhesive material is deposited on the substrate; and delivering water vapor to the processing chamber; And draining the water from the processing chamber. According to still another embodiment of the present invention, a method for adjusting a substrate is specifically provided, comprising: applying an adhesive layer to a substrate by: placing the substrate into a processing chamber, and evacuating the treatment The gas in the chamber is injected with a detergent into the processing chamber, the cleaning agent of the processing chamber is evacuated, the adhesive material is injected into the processing chamber, and the adhesive material is deposited on the substrate, and the water is steamed to 201028452 to Water in the processing chamber is evacuated in the processing chamber; and the substrate is embossed. BRIEF DESCRIPTION OF THE DRAWINGS The invention is described in detail with reference to the embodiments illustrated in the accompanying drawings. However, it is to be understood that the appended drawings are only illustrative of the exemplary embodiments of the present invention and are not intended to limit the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified side elevational view of the embodiment of the present invention. Figure 2 illustrates a simplified side view of the substrate shown in Figure 1 with a patterned layer thereon. Figure 3 illustrates a flow chart of a method for in situ ozone treatment of a substrate to apply an adhesive material. - Figure 4 illustrates a simplified side view of a processing chamber in accordance with one embodiment of the present invention. Figure 5 is a comparison of the adhesion pattern with in situ ozone treatment and no in situ ozone treatment. Figure 6 illustrates a substrate having an adhesive layer thereon. φ Figure 7 illustrates a simple side view of the pattern formation in a substrate.
【實施方式;J 較佳實施例之詳細說明 參考圖式，尤其是第1圖，其說明一使用微影系統1〇在 基材12上形成一離隙圖案。基材12可耦接至基材夾頭14。 如說明者，基材夾頭14為一真空夾頭。然而，基材夾頭14 可為任何夾頭，其包括但未限制為真空、梢型、溝槽-型、 電磁、及/或其相似者。範例的失頭如述於美國專利第 6,873,087號中，其全文併入本案做為參考。 5 201028452 基材12及基材夾頭14可進一步由平台16支撐。平台16 可提供沿X-、y-及z-轴的移動。平台16、基材12及基材夾頭 14亦可置於基座（未顯示）上。 由基材12分隔開的為一模板18。模板18通常包括一平 台20由其朝向基材12延伸，平台20具有一圖案表面22於其 上。再者，平台20可視為模20。模板18及/或模20可由包括 但未限制於下列的材料形成：熔凝矽、石英、矽、有機聚 合物、石夕氧炫聚合物、>6夕酸硼玻璃、氟碳聚合物、金屬、 硬化藍寶石及/或其相似者。如說明，圖案化表面22包含多 數個由分隔間之凹部24及/或突出部26界定之特徵，雖然本 發明之實施例並未限制至此一構形。圖案化表面22可定義 為形成於被成形在基材12上之圖案基礎的任何最初圖案。 模板18可耦接至夾頭28。夾頭28可設置但未限制為真 空、梢-型、溝槽-型、電磁、及/或其相似夾頭型。範例的 夾頭進一步描述於美國專利第6,873,087號，其併入本案做 為參考。再者，夾頭28可耦接至壓印頭30，故可設置夾頭 28及/或壓印頭30以增進模板18的移動。 系統10可更包含一流體分配系統32。流體分配系統32 可用於沉積可聚合之材料34於基材12上。可聚合之材料34 可使用技術如滴落分配、旋轉塗覆 '浸塗、化學氣相沉積 (CVD)、物理氣相沉積(PVD)、薄膜沉積、厚膜沉積及/或其 相似者放置於基材12上。可聚合之材料34在依設計考量下 在定義模20與基材12間的預期體積之前及/或之後可沉積 於基材12上。可聚合之材料34可包含一可聚合之材料，其 201028452 如述於美國專利第7，157,036號與美國專利公開第 2005/0187339號中’其等皆併入本案做為參考。 參考第1及2圖，系統1〇可更包含一能源38沿路徑“耦 接至直接能源40。可配置壓印頭30及平台16以放置模板 與基材12在路徑42上為重疊。系統10可以—與平台16、壓 印頭30、流體分配系統32、及/或源38通訊之處理器“調 節，且可在一儲存於s己憶體5 6之電腦可讀取程式上操作 壓印頭30、平台16或二者在模20與基材12間之—距離 ® 變化以在二者之間定義一由可聚合之材料34填充的預期空 間。例如’壓印頭30可施用一力至模板18，故模2〇接觸可 聚合之材料34。在預期的體積由可聚合之材料34填充後， 源38產生能量40 ’例如寬頻紫外線輻射，造成可聚合之材 料34固化及/或交聯以符合基材12的表面44形狀與圖宰化 表面22，在基材12上定義的圖案化層46。圖案化層46可包 含一殘餘層48及多數個顯示為突出部5〇與凹部52的特徵， 且突出部50具有厚度tl而殘餘層具有厚度t2。 前述的系統與製程可進一步的使用於在美國專利第 6,932,934號、美國專利公開第2004/0124566號、美國專利 公開第2〇04/0188381號、及美國專利公開第2004/0211754 號中述及的壓印微影製程與系統中，其等皆併入本案做為 參考。 基材12之表面44在模板18與圖案化層46分離期間可黏 著至圖案化層46。然而，可能發生在基材12之表面44與圖 案化層46間弱的黏著性’且可能造成基材12由圖案化層46 7 201028452 分離，其可能導致在圖案化層46的缺陷及產能門題 可在基材12與圖案化層46間放置一黏著層6〇(參考第5圖）、’ 改良基材12與圖案化層46間的黏著性，此將於後文詳乂 黏著層60可由一或一以上黏著材料形成，其包括作未 限制為丙烯醯氧基甲基三甲氧基矽烷、丙烯醯氧基甲^一 乙氧基矽烷，丙烯醯氧基丙基三氣矽烷、及/或丙烯醯氧基 丙基二甲乳基石夕烧。在某些實施例中，黏著層可更包人 或一以上的添加組份。一添加組份可包括1，2_雙（二甲氧美 矽曱基）乙烷及/或1，6雙(三氯矽甲基）己烷。黏著材料進一ι步 描述於美國公開第2007/0212494號中，其併入本案做為參考。 具原位基材表面洗淨與調節的黏著層沉積 第3圖（亦配合第4圖）說明使用原位製程以施用—黏著 層至基材12的方法3〇〇之流程圖。在一例示實施例中，基材 12為如前述之壓印微影基材。在步驟3〇2中，基材12可如第 4圖所示置入一處理室400中。顯示於第4圖的處理室400可 利於描述方法3〇〇的步驟，但非限制至此一說明的配置。於 第4圖的處理室可呈現任何型式之適於熟於此項技術人士 可完成方法3〇〇之步驟的可密封容器，且並未受限於此。再 者’顯示於第4圖的閥402及404為任何適於可密封進出一處 理室400的代表，其中閥402及404之配置為用於排空處理室 400及7或注入材料至處理室400。在一實施例中，閥402及 404可包含—單一閥。在一可替代實施例中，閥402及404可 包含任何數目的閥。再者，在一實施例中，閥402及404在 使用及目的上為可交換的。 201028452 在步驟中304，處理室400實質上可經由閥4〇2排空，亦 即幾乎所有的空氣、氮、或其他氣體組成物可在此步驟中 由處理室400排空。例如，處理室400可在低於1〇〇托耳的一 基礎壓力排空。在一例示實施例中，處理室4〇〇可在低於〇 2 托耳的一基礎壓力排空。 在步驟306中，處理室4〇〇可加熱至一增温。例如，處 理至400可加熱至南於至温的温度，亦即大於約μ。在可 替代的實施例中，處理室400可加熱至高於25。〇的温度，亦 即高至60°C、高至90°C或高至一不超過黏著材料會開始破 壞或分解的温度之温度。加熱處理室4〇〇至預期的温度可使 黏著材料蒸氣在處理室400壁上凝結最小化，若未防止。（黏 著材料蒸氣在另一步驟中注入至處理室4〇〇)。黏著材料蒸 氣的凝結可造成黏著材料在處理室400壁上的堆積且引起 汚染的問題。附接至反應室的硬體（例如門、闕、管及其相 似者)及/或置於反應室内的硬體（例如基材載具、心轴及其 相似者）亦可熱以防止黏著材料冷凝至該些組件或使冷凝 最小化。 在步驟308中’一洗淨劑可經由閥4〇4注入處理室4〇〇。 設置洗淨劑以清潔基材12表面的污染物，此需要在處理室 400排空前得到。例如，在空氣中發現的有機污染物可吸附 在一基材12表面上。在基材12表面上的有機污染物存在可 減少或防止黏著材料結合至表面以形成一黏著層。 因為有機污染物通常不能由一般的水洗淨方法清洗去 除’且溶劑亦可能殘留在基材12的表面上，需要由基材I] 9 201028452 洗淨有機_的其他方法 。基材12的原位洗淨製程可使用 數種方法完成’包括臭氧洗淨、UV/臭氧洗淨及電漿洗淨。 4寺定原位洗淨方法的選用係依基材12型式及基材12頂 表面上的任何材料層而定。例如，許多基材以在頂表面上 具碳頂塗覆(c〇C)層l〇2(See第5及6圖）。製造。若CoC 102 為在基材12頂表面層上，氧電漿洗淨可造成c〇c層102的嚴 重才貝害。在此例子中，可使用臭氧洗淨以清潔CoC層102並 使表面破壞最小化。在一實施例中，可在500托耳下引入250 g/cm漢度的臭氧至處理室400約1至30分鐘以清潔基材12 表面。 在步驟310中，洗淨劑可經由閥4〇2自處理室排空。可 使用數個清洗-排空循環以將在處理室400中的殘餘洗淨劑 的濃度最小化。留在處理室4〇〇中的殘餘洗淨劑可造成與蒸 氣黏著材料（在製程中注稍後注入反應室中）的不預期反 應。在一實施例中’洗淨劑可使用二清洗排空循環自處理 室400中排空。 在步驟312中，計量注入之黏著材料之黏著材料可經由 閥404喷入至處理室内。在—實施例中，注入之黏著材料可 °及附在基材12的表面，且可起始在基材12之表面的反應。 在一例示實施例中，與黏著材料在基材12表面之反應可形 成一黏著層於基材12的表面上。在此方式中，一黏著層6〇 可沉積於基材12上（參考第5及6圖）。依在處理室4〇〇中的的 圓片（基材12)數及處理室400的體積，注入的黏著材料體積 可由少於1毫升至數千毫升。例如，注入的黏著材料體積在 10 201028452 O.1 ml至1〇,000 ml範圍間。在注入之黏著材料與基材12間的 反應可持續1至30分鐘。 在步驟314中，水蒸氣可經閥4〇4傳送至處理室内。基 材12上表面的反應可持續約至再丨至3〇分鐘。 在步驟316中，處理室400可經由閥402排空水及任何殘 餘黏著材料。 在步驟318中，基材12可由處理室中移出。 第5圖為一在不具或具原位臭氧方法300下基於基材12 * 的碎力量(lbf)之疆印製程組的黏著力比較。組1至3顯示無 原位臭氧方法300所生成的黏著力。組4及5顯示具原位臭氧 方法300所生成的黏著力。如在此說明中顯示，在壓印一基 - 材12前使用一原位臭氧方法300可增加基材12與壓印在基 材12上之圖案化層46間的黏著力。在說明的實施例中，當 在壓印一基材12前使用一原位臭氧方法3〇〇時，平均黏著力 增加至介於3至13 lbf間。 ©中間層形成 參考第6圖，一基材12可以在基材12上具c〇c頂層1〇2 製造。例如，硬碟驅動介質通常以在基材12上具c〇c頂層 102製造。然而，一般使用的黏著材料不合於黏著至 C〇C102。故此，在CoC層102與黏著層60間可施用一中間層 100以做為一黏著促進劑或增進劑(如在第6圖中說明）。 中間層100可由一具有比黏著材料60對基材12更大黏 著性且具有比基材12對黏著材料60更大的黏著性的材料形 成。因此，中間層100具有對黏著層6〇與基材12的(：〇(：頂層 11 201028452 102二者的良好黏著。例如，中間層100可由下列材料之一 或其組合形成’其包括但未限制為组(Ta)、矽（Si)、氮化矽 (SixNy)、氧化矽（SiOx)、鉻（Cr)、氮化鉻（CrNx)、鈦-鎢 (TiW)、鉻化鈦(TiCr)、铷(Ru)及其相似者。在一實施例中， 中間層100可具有約3-15 nm的厚度t3。 第7圖說明一圖案由圖案化層46移轉至基材12的例示 圖案移轉。在此實施例中，除了圖案化層46，基材12包括 一黏著層60、一中間層100及一c〇C層102。通常，基材12 可具有CoC層102製造。在一實施例中，中間層1〇〇可置於 CoC層102上為前述原位洗淨及調節製程的部份。此外，在 一實施例中’黏著層60可置於中間層1〇〇為原位洗淨及調節 製程的部份。 如在第7圖中說明，在相〇期間，圖案化層46可使用前 述的壓印製程’界定一凹部70及突出部72形成於黏著層60 上。在圖案移轉相1期間，蝕刻與凹部70疊置的圖案化層46 與黏著層60之部份(移除）。例如，圖案化層46及黏著層60使 用一電漿預處理製程去除，如一氧系電漿蝕刻或其相似者。 在圖案移轉相2期間，可經由餘刻製程去除與凹部7〇疊 置的中間層100與CoC層102之部份。在一實施例中，中間 層100及CoC層102在一後遮罩蝕刻製程中去除。例如，若 使用氮化矽(Si3N4)為中間層1〇〇,則可使用一F-系電漿蝕刻 (氟系）餘刻中間層100並使用氧系電漿蝕刻蝕刻C〇C層102。 在圖案移轉相3期間’使用例如物理或化學蝕刻製程將 圖案自圖案化層46轉移至基材12。中間層100、黏著層1〇6 201028452 或圖案化層46可做為圖案轉移製程的遮罩。 在圖案移轉相3的可替代實施例中，可使用例如一電漿 蝕刻製程先去除圖案化層46及黏著層60，接著圖案轉移至 基材12。 在圖案移轉相4期間，若基材12仍包括中間層100、黏 著層60及圖案化層46,其等可去除(例如後圖案移轉）以造成 圖案化基材12。 【圖式簡單說明】DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference is made to the drawings, and particularly to Fig. 1, which illustrates the use of a lithography system 1 to form a relief pattern on a substrate 12. Substrate 12 can be coupled to substrate chuck 14. As explained, the substrate chuck 14 is a vacuum chuck. However, the substrate chuck 14 can be any collet including, but not limited to, vacuum, tip, groove-type, electromagnetic, and/or the like. The singularity of the example is described in U.S. Patent No. 6,873,087, the disclosure of which is incorporated herein in its entirety. 5 201028452 Substrate 12 and substrate chuck 14 may be further supported by platform 16. Platform 16 provides movement along the X-, y-, and z-axes. The platform 16, substrate 12 and substrate chuck 14 can also be placed on a susceptor (not shown). Separated by substrate 12 is a template 18. The template 18 generally includes a platform 20 extending therefrom toward the substrate 12 having a patterned surface 22 thereon. Again, platform 20 can be considered a modulo 20. The template 18 and/or the mold 20 may be formed of materials including, but not limited to, fused fused, quartz, ruthenium, organic polymer, oxarene polymer, > borax silicate glass, fluorocarbon polymer, Metal, hardened sapphire and/or its like. As illustrated, the patterned surface 22 includes a plurality of features defined by the recesses 24 and/or the projections 26 of the compartments, although embodiments of the invention are not limited to this configuration. Patterned surface 22 can be defined as any initial pattern formed on the basis of the pattern formed on substrate 12. The template 18 can be coupled to the collet 28 . The collet 28 can be provided but not limited to a vacuum, tip-type, groove-type, electromagnetic, and/or similar collet type. An example of a collet is described in U.S. Patent No. 6,873,087, incorporated herein by reference. Furthermore, the collet 28 can be coupled to the imprint head 30 so that the collet 28 and/or the imprint head 30 can be positioned to enhance the movement of the template 18. System 10 can further include a fluid dispensing system 32. Fluid dispensing system 32 can be used to deposit polymerizable material 34 on substrate 12. The polymerizable material 34 can be placed using techniques such as drop dispensing, spin coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. On the substrate 12. The polymerizable material 34 can be deposited on the substrate 12 before and/or after defining the desired volume between the mold 20 and the substrate 12, as designed. The polymerizable material 34 can comprise a polymerizable material, as described in U.S. Patent No. 7,157,036, issued to U.S. Pat. Referring to Figures 1 and 2, the system 1 can further include an energy source 38 "coupled to the direct energy source 40. The embossing head 30 and the platform 16 can be configured to place the template and the substrate 12 overlapping on the path 42. 10 may - the processor in communication with the platform 16, the imprint head 30, the fluid dispensing system 32, and/or the source 38 is "adjusted" and operable on a computer readable program stored in the memory. The printhead 30, the platform 16 or both are spaced apart by a distance - between the mold 20 and the substrate 12 to define an intended space between the two that is filled by the polymerizable material 34. For example, the stamping head 30 can apply a force to the template 18 so that the mold 2 is in contact with the polymerizable material 34. After the desired volume is filled with the polymerizable material 34, the source 38 produces energy 40', such as broadband ultraviolet radiation, causing the polymerizable material 34 to solidify and/or crosslink to conform to the surface 44 shape of the substrate 12 and the surface of the substrate. 22. A patterned layer 46 defined on substrate 12. The patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 5 and recesses 52, and the protrusions 50 have a thickness t1 and the residual layer has a thickness t2. The foregoing systems and processes can be further utilized in the teachings of U.S. Patent No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2,04/01883, and U.S. Patent Publication No. 2004/0211754. In the embossing lithography process and system, it is incorporated into this case for reference. Surface 44 of substrate 12 may adhere to patterned layer 46 during separation of template 18 from patterned layer 46. However, it may occur that the adhesion between the surface 44 of the substrate 12 and the patterned layer 46 is weak and may cause the substrate 12 to be separated by the patterned layer 46 7 201028452, which may result in defects and throughput gates in the patterned layer 46. The problem may be to place an adhesive layer 6〇 between the substrate 12 and the patterned layer 46 (refer to FIG. 5), 'adhesiveness between the modified substrate 12 and the patterned layer 46, which will be described later in detail. It may be formed of one or more adhesive materials including, but not limited to, propylene methoxymethyl trimethoxy decane, propylene methoxymethyl methoxy decane, propylene methoxy propyl trioxane, and / Or propylene methoxy propyl dimethyl silicate rock burning. In some embodiments, the adhesive layer can be more enveloping or more than one additional component. An additional component may include 1,2-bis(dimethoxymercapto)ethane and/or 1,6 bis(trichloroindolyl)hexane. The adhesive material is further described in U.S. Patent Publication No. 2007/0212494, which is incorporated herein by reference. Adhesive layer deposition with in situ substrate surface cleaning and conditioning Figure 3 (also in conjunction with Figure 4) illustrates a flow chart for the application of an in-situ process to apply an adhesive layer to substrate 12. In an exemplary embodiment, substrate 12 is an imprint lithography substrate as described above. In step 3〇2, the substrate 12 can be placed in a processing chamber 400 as shown in FIG. The process chamber 400 shown in Figure 4 can be used to describe the steps of Method 3, but is not limited to the configuration illustrated herein. The process chamber of Figure 4 can be embodied in any type of sealable container suitable for those skilled in the art to perform the steps of Method 3, and is not limited thereto. Further, the valves 402 and 404 shown in FIG. 4 are any representative suitable for sealing into and out of a processing chamber 400, wherein the valves 402 and 404 are configured to evacuate the processing chambers 400 and 7 or to inject material into the processing chamber. 400. In an embodiment, valves 402 and 404 can include a single valve. In an alternate embodiment, valves 402 and 404 can include any number of valves. Moreover, in one embodiment, valves 402 and 404 are interchangeable for use and purpose. 201028452 In step 304, the process chamber 400 can be substantially evacuated via valve 4〇2, i.e., substantially all of the air, nitrogen, or other gas composition can be evacuated from the process chamber 400 in this step. For example, the process chamber 400 can be vented at a base pressure below 1 Torr. In an exemplary embodiment, the processing chamber 4 can be evacuated at a base pressure below 〇 2 Torr. In step 306, the processing chamber 4 can be heated to a warming temperature. For example, treatment to 400 can be heated to a temperature south to temperature, i.e., greater than about μ. In an alternative embodiment, the process chamber 400 can be heated to above 25. The temperature of the crucible, that is, as high as 60 ° C, as high as 90 ° C or as high as a temperature not exceeding the temperature at which the adhesive material begins to break or decompose. Heating the processing chamber 4 to a desired temperature minimizes condensation of the adhesive material vapor on the walls of the processing chamber 400 if not prevented. (The adhesive material vapor is injected into the process chamber 4 in another step). Condensation of the vapor of the adhesive material can cause accumulation of the adhesive material on the walls of the process chamber 400 and cause contamination problems. Hardware attached to the reaction chamber (eg, doors, rafts, tubes, and the like) and/or hardware placed within the reaction chamber (eg, substrate carrier, mandrel, and the like) may also be hot to prevent adhesion The material condenses to the components or minimizes condensation. In step 308, a detergent can be injected into the processing chamber 4 via valve 4〇4. A detergent is provided to clean the contaminants on the surface of the substrate 12, which needs to be obtained before the processing chamber 400 is emptied. For example, organic contaminants found in the air can be adsorbed on the surface of a substrate 12. The presence of organic contaminants on the surface of the substrate 12 reduces or prevents the bonding material from bonding to the surface to form an adhesive layer. Since organic contaminants are usually not cleaned by a general water washing method and the solvent may remain on the surface of the substrate 12, other methods of washing the organic material from the substrate I] 9 201028452 are required. The in-situ cleaning process of substrate 12 can be accomplished using a number of methods, including ozone cleaning, UV/ozone cleaning, and plasma cleaning. 4 The selection of the in-situ cleaning method of the temple depends on the substrate type 12 and any material layer on the top surface of the substrate 12. For example, many substrates have a carbon top coating (c〇C) layer l〇2 on the top surface (See Figures 5 and 6). Manufacturing. If the CoC 102 is on the top surface layer of the substrate 12, the oxygen plasma cleaning can cause severe damage to the c〇c layer 102. In this example, ozone cleaning can be used to clean the CoC layer 102 and minimize surface damage. In one embodiment, 250 g/cm of ozone can be introduced to the processing chamber 400 at 500 Torr for about 1 to 30 minutes to clean the surface of the substrate 12. In step 310, the detergent can be emptied from the processing chamber via valve 4〇2. Several purge-empty cycles can be used to minimize the concentration of residual detergent in the process chamber 400. The residual detergent remaining in the chamber 4 can cause an undesired reaction with the vapor-adhesive material (which is injected into the reaction chamber later in the process). In one embodiment, the detergent can be emptied from the processing chamber 400 using a two-cleaning venting cycle. In step 312, the adhesive material of the metered adhesive material can be injected into the processing chamber via valve 404. In the embodiment, the injected adhesive material can be attached to the surface of the substrate 12 and the reaction at the surface of the substrate 12 can be initiated. In an exemplary embodiment, the adhesion of the adhesive material to the surface of the substrate 12 forms an adhesive layer on the surface of the substrate 12. In this manner, an adhesive layer 6〇 can be deposited on the substrate 12 (refer to Figures 5 and 6). The volume of the adhesive material to be injected may be from less than 1 ml to several thousand ml depending on the number of wafers (substrate 12) in the chamber 4 and the volume of the processing chamber 400. For example, the volume of the injected adhesive material ranges from 10 201028452 O.1 ml to 1 〇,000 ml. The reaction between the injected adhesive material and the substrate 12 can last from 1 to 30 minutes. In step 314, water vapor can be delivered to the processing chamber via valve 4〇4. The reaction on the upper surface of the substrate 12 can be continued for about 3 minutes. In step 316, process chamber 400 can evacuate water and any residual adhesive material via valve 402. In step 318, the substrate 12 can be removed from the processing chamber. Figure 5 is a comparison of the adhesion of a printing process group based on the breaking force (lbf) of the substrate 12* without the in-situ ozone method 300. Groups 1 through 3 show the adhesion generated by the in-situ ozone method 300. Groups 4 and 5 show the adhesion generated by the in situ ozone method 300. As shown in this description, the use of an in-situ ozone method 300 prior to imprinting a substrate 12 increases the adhesion of the substrate 12 to the patterned layer 46 imprinted on the substrate 12. In the illustrated embodiment, when an in-situ ozone method is used prior to imprinting a substrate 12, the average adhesion is increased to between 3 and 13 lbf. © Intermediate Layer Formation Referring to Figure 6, a substrate 12 can be fabricated on the substrate 12 with a c〇c top layer 1〇2. For example, hard disk drive media are typically fabricated with a top layer 102 of c〇c on substrate 12. However, the commonly used adhesive material does not adhere to C〇C102. Thus, an intermediate layer 100 can be applied between the CoC layer 102 and the adhesive layer 60 as an adhesion promoter or enhancer (as illustrated in Figure 6). The intermediate layer 100 may be formed of a material having a greater adhesion to the substrate 12 than the adhesive material 60 and having a greater adhesion to the adhesive material 60 than the substrate 12. Therefore, the intermediate layer 100 has a good adhesion to the adhesive layer 6 〇 and the substrate 12 (: 〇 (: top layer 11 201028452 102. For example, the intermediate layer 100 may be formed of one or a combination of the following materials), which includes but not Restricted to group (Ta), bismuth (Si), tantalum nitride (SixNy), yttrium oxide (SiOx), chromium (Cr), chromium nitride (CrNx), titanium-tungsten (TiW), titanium chromium (TiCr) Ru (Ru) and the like. In an embodiment, the intermediate layer 100 may have a thickness t3 of about 3-15 nm. Figure 7 illustrates an exemplary pattern in which a pattern is transferred from the patterned layer 46 to the substrate 12. In this embodiment, in addition to the patterned layer 46, the substrate 12 includes an adhesive layer 60, an intermediate layer 100, and a c〇C layer 102. Typically, the substrate 12 can be fabricated with a CoC layer 102. In an embodiment, the intermediate layer 1 can be placed on the CoC layer 102 as part of the in-situ cleaning and conditioning process. Further, in an embodiment, the adhesive layer 60 can be placed in the intermediate layer. Part of the cleaning and conditioning process. As illustrated in Figure 7, the patterned layer 46 can define a recess 70 and protrusion using the aforementioned imprinting process during phase contrast. 72 is formed on the adhesive layer 60. During the pattern shifting phase 1, the patterned layer 46 and the adhesive layer 60 are overlapped (removed) with the recess 70. For example, the patterned layer 46 and the adhesive layer 60 are used. A plasma pretreatment process is removed, such as an oxygen plasma etching or the like. During the pattern shifting phase 2, portions of the intermediate layer 100 and the CoC layer 102 overlapping the recesses 7 may be removed via a remnant process. In one embodiment, the intermediate layer 100 and the CoC layer 102 are removed in a post-mask etching process. For example, if tantalum nitride (Si3N4) is used as the intermediate layer, an F-system plasma can be used. The intermediate layer 100 is etched (fluorine-based) and the C〇C layer 102 is etched using an oxygen plasma. During the pattern shifting phase 3, the pattern is transferred from the patterned layer 46 to the substrate using, for example, a physical or chemical etching process. 12. The intermediate layer 100, the adhesive layer 1〇6 201028452 or the patterned layer 46 can be used as a mask for the pattern transfer process. In an alternative embodiment of the pattern transfer phase 3, for example, a plasma etching process can be used first to remove The patterned layer 46 and the adhesive layer 60 are then transferred to the substrate 12 in a pattern. During phase 4, if the substrate 12 still includes an intermediate layer 100, the adhesion layer 60 and patterned layer 46, and the like which can be removed (e.g., after a pattern transfer) to cause the patterned substrate 12. [Brief Description of the drawings]
第1圖說明本發明之一實施例的微影系統之簡單側視圖。 第2圖說明顯示在第1圖之基材的簡單側視圖，其具有 一圖案化層於其上。 第3圖說明用於原位臭氧處理一基材以施用黏著材料 的方法之流程圖。 第4圖說明本發明之一實施例的處理室之簡單側視圖。 第5圖為以原位臭氧處理與無原位臭氧處理的黏著圖 式比較。 第6圖說明一具有黏著層於其上的基材。 第7圖說明在一基材中的圖案形成之簡單側視圖。 【主要元件符號說明】 10…微影系統 20…平台/模 12…基材 22…圖案表面 14…夾頭 24…凹部 16…平台 26…突出部 18…模板 28…夾頭 13 201028452 30…壓印頭 102…CoC頂層 32…流體分配系統 tl…厚度 34…材料 t2…厚度 38…能源 t3…厚度 40…能源 300…方法 42…路徑 302…基材載入一處理室中 44…表面 400…處理室 46…圖案化層 402、404…閥 48…殘餘層 304…排空處理室 50…突出部 306…加熱處理室 52…凹部 308…注入洗淨劑至處理室 54…處理器 310…自處理室排空洗淨劑 56···記憶體 312…注入黏著材料至處理室 60…黏著層 314…傳送水蒸氣至處理室 70…凹部 316…排空處理室 72…突出部 318…由處理室移出基材 100···中間層BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates a simplified side view of a lithography system in accordance with one embodiment of the present invention. Figure 2 illustrates a simplified side view of the substrate shown in Figure 1 with a patterned layer thereon. Figure 3 illustrates a flow chart of a method for in situ ozone treatment of a substrate to apply an adhesive material. Figure 4 illustrates a simplified side view of a processing chamber in accordance with one embodiment of the present invention. Figure 5 is a comparison of the adhesion pattern with in situ ozone treatment and no in situ ozone treatment. Figure 6 illustrates a substrate having an adhesive layer thereon. Figure 7 illustrates a simplified side view of the patterning in a substrate. [Main component symbol description] 10... lithography system 20... platform/mold 12...substrate 22...pattern surface 14...chuck 24...recess 16...plater 26...protrusion 18...template 28...chuck 13 201028452 30...pressure Print head 102...CoC top layer 32...fluid distribution system tl...thickness 34...material t2...thickness 38...energy t3...thickness 40...energy 300...method 42...path 302...substrate loaded into a processing chamber 44...surface 400... Processing chamber 46...patterning layer 402, 404...valve 48...residual layer 304...empting processing chamber 50...protrusion 306...heating processing chamber 52...recess 308...injecting detergent to processing chamber 54...processor 310...from Processing chamber emptying agent 56·· Memory 312...Injecting adhesive material into processing chamber 60...Adhesive layer 314...Transporting water vapor to processing chamber 70...Concave portion 316...Evacuation processing chamber 72...Protruding portion 318...Processing The chamber is removed from the substrate 100···the middle layer