201028035 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種電激發光元件之製造方法’且 特別有關於一種薄膜電晶體之製造方法。 · 【先前技術】 一般而言，薄膜電晶體主要包括非晶石夕薄膜電晶體 與多晶矽薄膜電晶體。習知電激發光元件顯示器 (electroluminescent device display)之陣列基板可以區分 ❹ 為發光區與電路區，而陣列基板的製造方法主要包括： 形成薄膜電晶體(thin film transistor; TFT)、形成畫素電 極、以及形成有機發光二極體。其中’薄膜電晶體的製 程通常包括下列步驟··在基板之整個表面上形成緩衝 層、多晶矽層、閘極絕緣層、閘極、層間介電層。在薄 膜電晶體完成之後，接著形成晝素電極，且此畫素電極 與薄膜電晶體呈電性連接。之後，再於發光區上形成透 明陽極、有機發光層、以及反射式陰極，而完成電激發 # 光元件的製作。通常，多晶矽薄膜電晶體製程中包含一 準分子雷射退火（excimer laser anneal; ELA)步驟，以 將緩衝層上之非晶矽層轉化為多晶矽層，而形成多晶矽 薄膜電晶體。 然而，由於準分子雷射退火（excimer laser anneal; ELA )步驟所製作出之薄膜電晶體（例如，用於驅動之 薄膜電晶體（driving TFT ))具有很大的電子移動率 0773-A31972DTWF 4 201028035 (mobility)變異性，因此會導致每一個子晝素之發光亮 度皆不一致，而產生顏色不均（Mura )的缺陷。 因此業界亟需一種可以解決上述問題的電激發光元 • 件。 【發明内容】 有鑑於上述問題，本發明幾個較佳實施例係藉由增 加保護膜（protection film)的方式，以改善薄膜電晶體 ⑩ 間電性差異過大的問題。而且，藉由增加保護膜的方式， 可以使用較小的通道長度（channel length )而提高開口 率。 本發明一較佳實施例係提供一種有機電激發光元件 的製造方法，包括：提供一基板，該基板包括一第一元 件區域與一第二元件區域；形成一非晶矽層於該基板上 方；形成一保護膜於該第二元件區域内之部份該非晶矽 層上方；對該非晶矽層進行一準分子雷射退火製程，以 ® 將該非晶矽層轉化為一多晶矽層；移除該保護膜；以及 圖案化該多晶矽層，以在該第一元件區域形成一第一圖 案化多晶矽層，及在該第二元件區域形成一第二圖案化 多晶矽層，其中該第一圖案化多晶矽層之晶粒尺寸大於 該第二圖案化多晶矽層，藉此形成一有機電激發光元件。 本發明另一較佳實施例係提供一種有機電激發光元 件的製造方法，包括：提供一基板，該基板包括一第一 元件區域與一第二元件區域；形成一第一、第二圖案化 0773-A31972DTWF 5 201028035 非晶♦層於該第一 於該第二圖幸仆：：元件區域上方；形成-保護膜 案化非晶石夕層進行1層八上方;/及對該第一、第二圖 一、国也 準刀子雷射退火製程，以將該第 晶矽層二：化非晶矽層轉化為一第一、第二圖案化多 第-圖聿：：該第一圖案化多晶矽層之晶粒尺寸大於該 H 夕層，藉此形成-有機電激發光元件。 件的f佳實施㈣提供—種有機電激發光元 -._ ^ ^'匕括.提供一基板，該基板包括一第一 ==與-第二元件區域；形成—圖案化保護膜於該 區域上方，开》成一非晶矽層於該基板與該圖案 呆》、膜上方’對該非晶梦層進行一準分子雷射退火製 程以將該非晶♦層轉化為一多晶梦層；以及圖案化該 多晶石夕層’以在該第—元件區域形成—第—圖案化多晶 矽層及在該第二兀件區域形成一第二圖案化多晶矽 層’其中該第-圖案化多晶梦層之晶粒尺寸大於該第二 圖案化多晶矽層，藉此形成一有機電激發光元件。 綜上所述，本發明較佳實施例之方法可以改善薄膜 電晶體間電性差異過大的問題、提高開口率，並且不會 增加製程之複雜度。 【實施方式】 第1圖係繪示一主動矩陣式有機電激發光元件中一 個畫素之等效電路圖。值得注意的是，在說明書内所指 的每一個“晝素”包括一個開關薄膜電晶體（switching thin201028035 VI. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing an electroluminescent device, and particularly to a method of manufacturing a thin film transistor. [Prior Art] In general, a thin film transistor mainly includes an amorphous thin film transistor and a polycrystalline thin film transistor. The array substrate of the conventional electroluminescent device display can distinguish between the light emitting region and the circuit region, and the manufacturing method of the array substrate mainly includes: forming a thin film transistor (TFT) and forming a pixel electrode And forming an organic light emitting diode. The process of the thin film transistor generally includes the following steps: forming a buffer layer, a polysilicon layer, a gate insulating layer, a gate electrode, and an interlayer dielectric layer on the entire surface of the substrate. After the completion of the thin film transistor, a halogen electrode is subsequently formed, and the pixel electrode is electrically connected to the thin film transistor. Thereafter, a transparent anode, an organic light-emitting layer, and a reflective cathode are formed on the light-emitting region to complete the fabrication of the electrical excitation light-emitting element. Generally, a polycrystalline germanium thin film transistor process includes an excimer laser anneal (ELA) step to convert an amorphous germanium layer on the buffer layer into a polycrystalline germanium layer to form a polycrystalline germanium thin film transistor. However, a thin film transistor (for example, a driving TFT for driving) produced by an excimer laser anneal (ELA) step has a large electron mobility rate 0773-A31972DTWF 4 201028035 (mobility) variability, which will result in inconsistencies in the luminosity of each sub-quality element, resulting in a defect in color unevenness (Mura). Therefore, there is a need in the industry for an electroluminescent element that can solve the above problems. SUMMARY OF THE INVENTION In view of the above problems, several preferred embodiments of the present invention improve the problem of excessive electrical differences between the thin film transistors 10 by adding a protective film. Moreover, by increasing the size of the protective film, a smaller channel length can be used to increase the aperture ratio. A preferred embodiment of the present invention provides a method of fabricating an organic electroluminescent device, comprising: providing a substrate including a first device region and a second device region; forming an amorphous germanium layer over the substrate Forming a protective film over a portion of the amorphous germanium layer in the second device region; subjecting the amorphous germanium layer to a quasi-molecular laser annealing process to convert the amorphous germanium layer into a poly germanium layer; The protective film; and patterning the polysilicon layer to form a first patterned polysilicon layer in the first device region, and forming a second patterned polysilicon layer in the second device region, wherein the first patterned polysilicon layer The layer has a grain size larger than the second patterned polysilicon layer, thereby forming an organic electroluminescent element. Another preferred embodiment of the present invention provides a method of fabricating an organic electroluminescent device, comprising: providing a substrate, the substrate including a first component region and a second component region; forming a first and second patterning 0773-A31972DTWF 5 201028035 Amorphous ♦ layer in the first picture of the second figure: above the element area; forming a protective film to form an amorphous layer of arbor layer on top of the first layer of eight; In the second figure, the country also has a knife laser annealing process to convert the first germanium layer: the amorphous layer into a first and second patterned multi-pattern:: the first patterning The polycrystalline germanium layer has a grain size larger than the H layer, thereby forming an organic electroluminescent element. A good implementation of the device (4) provides an organic electroluminescence element -. ^ ^ ' 匕 .. Provide a substrate, the substrate includes a first == and - second element region; forming a patterned protective film Above the region, the opening of the amorphous layer is performed on the substrate and the pattern, and the film is subjected to a quasi-molecular laser annealing process to convert the amorphous layer into a polycrystalline dream layer; Patterning the polycrystalline layer to form a first patterned polycrystalline layer in the first element region and a second patterned polycrystalline layer in the second element region, wherein the first patterned polycrystalline dream The layer has a grain size larger than the second patterned polysilicon layer, thereby forming an organic electroluminescent element. In summary, the method of the preferred embodiment of the present invention can improve the problem of excessive electrical difference between the thin film transistors, increase the aperture ratio, and increase the complexity of the process. [Embodiment] FIG. 1 is an equivalent circuit diagram of a pixel in an active matrix organic electroluminescent device. It is worth noting that each "halogen" referred to in the specification includes a switching thin film transistor (switching thin)
0773-A31972DTWF 6 201028035 film transistor)與驅動薄膜電晶體（driving thin film transistor ) 如第1圖所示，在一包括複數個晝素之晝素區域（未 - 顯示）内’ 一畫素100包含開關薄膜電晶體102、驅動薄 膜電晶體104、有機發光二極體1〇6、資料線1〇8、掃描 線110以及儲存電容112。有機發光二極體106更包含陽 極電極、電激發光層與陰極（未顧示）。值得注意的是， 開關薄膜電晶體102與驅動薄膜電晶體104係形成於同 馨一畫素内。 第1實施例 第2a〜2f圓係繪示本發明一較佳實施例中有機電激 發光元件之製造方法的剖面圖。 如第2a圖所示’在包括第一元件區域（例如，開關 薄膜電晶體（switching thin film transistor )區域 I)與第 φ 二元件區域（例如，驅動薄膜電晶體（driving thin film transistor )區域II)之基板200上依序形成一緩衝層202、 一非晶矽層204與一保護膜2〇6。其中，保護膜2〇6係形 成於第二元件區域Π内之部份非晶矽層204上方；且保 護膜206包括以矽為基材之材料，例如是氧化矽以沁幻、 氮化矽（SiNx)、氮氧化矽（Si〇xNy)、或氧化矽與氮 化矽的疊層結構。 、如第2b圖所示’對非晶矽層204進行一準分子雷射 退火製程208 ’以將該非晶矽層轉化為一多晶矽層0773-A31972DTWF 6 201028035 film transistor) and driving thin film transistor As shown in FIG. 1, in a pixel region including a plurality of halogens (not-displayed), a pixel 100 includes a switch The thin film transistor 102, the driving thin film transistor 104, the organic light emitting diode 1〇6, the data line 1〇8, the scanning line 110, and the storage capacitor 112. The organic light-emitting diode 106 further includes an anode electrode, an electroluminescent layer and a cathode (not shown). It is to be noted that the switching thin film transistor 102 and the driving thin film transistor 104 are formed in the same pixel. [First Embodiment] Figs. 2a to 2f are cross-sectional views showing a method of manufacturing an organic electroluminescence device according to a preferred embodiment of the present invention. As shown in FIG. 2a, 'including a first element region (for example, switching thin film transistor region I) and a second φ second device region (for example, driving thin film transistor region II) A buffer layer 202, an amorphous germanium layer 204 and a protective film 2〇6 are sequentially formed on the substrate 200. Wherein, the protective film 2〇6 is formed over a portion of the amorphous germanium layer 204 in the second element region ;; and the protective film 206 comprises a material based on germanium, such as germanium oxide, germanium, tantalum nitride (SiNx), bismuth oxynitride (Si〇xNy), or a stacked structure of cerium oxide and tantalum nitride. , as shown in FIG. 2b, performing a quasi-molecular laser annealing process 208 ' on the amorphous germanium layer 204 to convert the amorphous germanium layer into a poly germanium layer.
0773-A31972DTWF 201028035 (204a，204b );但是，在準分子雷射退火製程208中， 因為保護膜206可以反射部分雷射能量的緣故，所以導 致部分多晶矽層204a與部分多晶矽層204b具有不同結 晶效果。也就是說，由於未被保護膜206覆蓋之部分多 晶矽層204b直接受到完整的準分子雷射能量照射的緣 故，所以具有較大尺寸的晶粒（grain )，而其電子遷移 率大約為100cm2/V-s。另一方面，由於保護膜206反射 部分雷射能量的緣故，因而下方之多晶矽層204a的晶粒 尺寸較小，但是晶粒均一性（uniformity )卻增加，而其 電子遷移率大約小於l〇〇cm2/V-s。 如第2c圖所示，移除保護膜206。接著，如第2d 圖所示，圖案化多晶矽層（204a，204b )，而形成位於 開關薄膜電晶體區域I内之第一主動層204’b與位於驅動 薄膜電晶體區域II内之第二主動層204a。 如第2e圖所示，形成一閘極介電層210，以覆蓋第 一主動層204’b與第二主動層204a等圖案化多晶矽層以 及緩衝層202。 接著，如第2f圖所示，依序進行後續製程，以形成 閘極（212，214)、層間介電層216、導線218、覆蓋層 220、及透明電極（畫素電極）224，由於此部分並非本 發明重點，在此省略說明。最後，完成一有機電激發光 元件2000，包括開關薄膜電晶體與驅動薄膜電晶體。上 述開關薄膜電晶體包括閘極212、閘極介電層210與第一 主動層204’b;另外，上述驅動薄膜電晶體包括閘極214、 0773-A31972DTWF 8 201028035 閘極介電層210與第二主動層204a。其中，第一主動層 2 〇4’b包括通道區2〇4’c、輕接雜没極（lightly doped drain) 204’d、源/汲極204’e;第二主動層204a包括通道區204c 與源/汲極204d。 第2實施例 第3a〜3f圖係繪示本發明另一較佳實施例中有機電 激發光元件之製造方法的剖面圖。0773-A31972DTWF 201028035 (204a, 204b); however, in the excimer laser annealing process 208, since the protective film 206 can reflect part of the laser energy, the partial polycrystalline germanium layer 204a and the partially polycrystalline germanium layer 204b have different crystallization effects. . That is, since the portion of the polysilicon layer 204b not covered by the protective film 206 is directly irradiated with the complete excimer laser energy, it has a grain of a larger size, and its electron mobility is about 100 cm 2 / Vs. On the other hand, since the protective film 206 reflects part of the laser energy, the underlying polysilicon layer 204a has a smaller grain size, but the grain uniformity increases, and its electron mobility is less than about l〇〇. Cm2/Vs. The protective film 206 is removed as shown in Fig. 2c. Next, as shown in FIG. 2d, the polysilicon layer (204a, 204b) is patterned to form a first active layer 204'b located in the transistor film region I and a second active layer in the driving film transistor region II. Layer 204a. As shown in Fig. 2e, a gate dielectric layer 210 is formed to cover the patterned polysilicon layer and the buffer layer 202 of the first active layer 204'b and the second active layer 204a. Then, as shown in FIG. 2f, subsequent processes are sequentially performed to form gates (212, 214), interlayer dielectric layers 216, wires 218, cap layers 220, and transparent electrodes (pixel electrodes) 224. The part is not the focus of the present invention, and the description is omitted here. Finally, an organic electroluminescent device 2000 is completed, including a switching film transistor and a driving film transistor. The switching thin film transistor includes a gate 212, a gate dielectric layer 210 and a first active layer 204'b; in addition, the driving thin film transistor includes a gate 214, 0773-A31972DTWF 8 201028035, a gate dielectric layer 210 and a first Two active layers 204a. The first active layer 2 〇 4'b includes a channel region 2〇4'c, a lightly doped drain 204'd, and a source/drain 204'e; the second active layer 204a includes a channel region. 204c with source/drain 204d. (Second Embodiment) Figs. 3a to 3f are cross-sectional views showing a method of manufacturing an organic electroluminescent device according to another preferred embodiment of the present invention.
如第3a圖所示，在包括開關薄膜電晶體（ 偷fihn她sistor )區域！與驅動薄膜電晶體（偷㈣她 fihn t刪istor) 之基板3〇〇上依序形成 302與一非晶矽層304。 如第3b圖所不，將非晶石夕廣3〇 於開關薄膜電晶體案化料成位 輕曰紅 圖案非晶矽層304b以及位 於驅動薄膜電曰曰體區域n之圖案化非晶矽層购。 以及部二二:了： ’形成-覆蓋圖案化非晶石夕層3。如 二表面之保護膜3〇6。上述保護請 匕括以碎為基材之材料’例如 矽（SiNx)、氮氧化功〜 吵（UOx)、亂化 的叠層結構。 （lQxNy)、魏化♦與氣化石夕 如第3d圖所示，推并准八工氣 以蔣圖棄脊韭曰访抵準子雷射退火製程3〇8, 以將圖案化非晶梦層3G4a與· 與304ά。其中，位於M肪姑 匕為夕曰日矽層304c 、碭關薄膜電晶體區域I内之吝曰石々 層304d作為後續形成 竦ί内之夕曰曰矽 竭關薄膜電日曰體的第一主動層，As shown in Figure 3a, in the area including the switch film transistor (stolen fihn her sistor)! A substrate 302 and an amorphous germanium layer 304 are sequentially formed on the substrate 3 of the driving thin film transistor (stealing). As shown in Fig. 3b, amorphous 夕 夕 〇 〇 〇 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关 开关Layer purchase. And part two:: 'Forming-covering the patterned amorphous slab layer 3. For example, the protective film of the two surfaces is 3〇6. For the above protection, please use a material based on shredded materials such as 矽 (SiNx), nitriding work ~ UOx, and a disordered laminated structure. (lQxNy), Weihua ♦ and gasification stone eve as shown in the 3rd figure, push and quasi-eight working gas to visit the laser annealing annealing process 3〇8 in order to map the amorphous dream layer 3G4a and · with 304ά. Among them, the M 匕 匕 匕 is the 曰 曰 曰 layer 304c, the 吝曰 薄膜 电 电 薄膜 薄膜 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 304 An active layer,
0773-A31972DTWF 201028035 而位於驅動薄膜電晶體區域II内之多晶矽層304c則作為 後續形成之驅動薄膜電晶體的第二主動層。但是，在準 分子雷射退火製程308中，因為保護膜306可以反射部 分雷射能量的緣故，所以導致多晶矽層304c與多晶矽層 3〇4d具有不同結晶效果。換句話說，由於未被保護膜306 覆蓋之多晶矽層304b直接受到完整的準分子雷射能量照 射的緣故，所以具有較大尺寸的晶粒（grain )，而其電 子遷移率大約為l〇〇cm2/V-s。另一方面，由於保護膜306 反射部分雷射能量的緣故，因而下方之多晶矽層304c的 晶粒尺寸較小，但是晶粒均一性（uniformity )卻增加， 而其電子遷移率大約小於1 〇〇cm2/V_s。 如第3e圖所示，形成一閘極介電層309，以覆蓋第 一主動層與第二主動層等圖案化多晶矽層以及緩衝層 302。 接著，如第3f圖所示，依序進行後續製程，以形成 閘極（310，312)、層間介電層314、導線316、覆蓋層 318、及透明電極（晝素電極）322，由於此部分並非本 發明重點，在此省略說明。最後，完成一有機電激發光 元件3000，包括開關薄膜電晶體與驅動薄膜電晶體。上 述開關薄膜電晶體包括閘極310、閘極介電層309與第一 主動層；另外，上述驅動薄膜電晶體包括閘極312、閘極 介電層309與第二主動層。其中，第一主動層包括通道 區 304’a、輕摻雜没極（lightly doped drain) 304’b、源/ 汲極304’c;第二主動層包括通道區304’d與源/汲極 0773-A31972DTWF 10 201028035 3044 ° 第3實施例 第4a〜4g圖係繪示本發明又一較佳實施例中有機電 激發光元件之製造方法的剖面圖。 如第4a圖所示，在包括開關薄膜電晶體（switching thin film transistor )區域 I 與驅動薄膜電晶體（driving thin film transistor )區域II之基板400上形成一圖案化保護 ❹ 膜402。上述圖案化保護膜位於驅動薄膜電晶體區域II 内。上述圖案化保護膜402之材料包括氧化矽（SiOx)、 氮化矽（ SiNx)、氮氧化矽（SiOxNy)、或其疊層結構。 如第4b圖所示，形成一緩衝層404於圖案化保護膜 402與基板400上方。接著，形成一非晶矽層406於緩衝 層404上方，如第4c圖所示。 如第4d圖所示，對非晶矽層406進行一準分子雷射 退火製程408，以將非晶矽層406轉化為一多晶矽層 ^ ( 406a，406b)。 如第4e圖所示，將多晶梦層（406a，406b )圖案化， 而形成圖案化多晶矽層406’a與406b。其中，位於開關 薄膜電晶體區域I内之多晶矽層406’a作為後續形成之開 關薄膜電晶體的第一主動層，而位於驅動薄膜電晶體區 域II内之多晶矽層406b則作為後續形成之驅動薄膜電晶 體的第二主動層。但是，在準分子雷射退火製程408中， 因為圖案化保護膜402可以反射部分雷射能量的緣故， 0773-A31972DTWF 11 201028035 所以導致圖案化多晶矽層406，a與4〇6b且古^ 田μ ” *Ubb具有不同結晶效 果。換句話說，由於圖案化多晶矽届4以， 日日矽層406、直接受到準分 子雷射能量照射的緣故，所以且古私 τ M具有較大尺寸的晶粒 (grain)，而其電子遷移率大約為1〇〇咖2/v_s。另一方 面’由於圖案化保護膜402吸收部分雷射能量的緣故， 因而上方之圖案化多晶矽層406，a的晶粒尺寸較小，但是 晶粒均-性Uniformity)卻增加，而其電子遷移率大約 小於 100cm2/V-s。 ❺ 如第4f圖所示，形成一閘極介電層41〇，以覆蓋第 一主動層與第二主動層等圖案化多晶矽層以及緩衝層 402。 接著，如第4g圖所示，依序進行後續製程，以形成 閘極（412 ’ 414)、層間介電層416、導線418、覆蓋層 420、及透明電極（畫素電極）424，由於此部分並非本 發明重點，在此省略說明。最後，完成一有機電激發光 元件4000 ’包括開關薄膜電晶體與驅動薄膜電晶體。上 述開關薄膜電晶體包括閘極412、閘極介電層41〇與第一 · 主動層；另外，上述驅動薄膜電晶體包括閘極414、閘極 介電層410與第二主動層。其中，第一主動層包括通道 區 406’d、輕摻雜汲極（lightly doped drain) 406，b、源/ 汲極406 c，第二主動層包括通道區4〇6c與源/没極4〇6d。 第4實施例 第5a〜5g圖係繪示本發明又一較佳實施例中有機電 0773-A31972DTWF 12 201028035 激發光元件之製造方法的剖面圖。 如第5a圖所示，在包括開關薄膜電晶體（switching thin film transistor)區域 I 與驅動薄膜電晶體（driving thin film transistor )區域II之基板500上形成一圖案化保護 膜502。上述圖案化保護膜位於驅動薄膜電晶體區域II 内。上述圖案化保護膜502包括任何金屬材料。 如第5b圖所示，形成一緩衝層504於圖案化保護膜 502與基板500上方。接著，形成一非晶矽層506於缓衝 ❿ 層504上方，如第5c圖所示。 如第5d圖所示，對非晶矽層506進行一準分子雷射 退火製程508，以將非晶矽層506轉化為一多晶矽層 (506a，506b)。 如第5e圖所示，將多晶矽層（ 506a，506b)圖案化， 而形成圖案化多晶矽層506’a與506b。其中，位於開關 薄膜電晶體區域I内之多晶矽層506’a作為後續形成之開 • 關薄膜電晶體的第一主動層，而位於驅動薄膜電晶體區 域II内之多晶矽層506b則作為後續形成之驅動薄膜電晶 體的第二主動層。但是，在準分子雷射退火製程508中， 因為圖案化保護膜502散熱較其他部分快的緣故，所以 導致圖案化多晶矽層506’a與506b具有不同結晶效果。 換句話說，由於圖案化多晶矽層506’a直接受到完整的準 分子雷射能量照射的緣故，所以具有較大尺寸的晶粒 (grain)，而其電子遷移率大約為100cm2/V-s。另一方 面，圖案化保護膜502上方之圖案化多晶矽層506’a的晶 0773-A31972DTWF 13 201028035 ’’寸較j但疋晶粒均一性（uniformity )卻增加，而 其電子遷移率大約小於1〇〇cm2/V s。 如第5f圖所示，形成一閘極介電層510，以覆蓋第 動層與第一主動層等圖案化多晶石夕層以及緩衝層 502。 及巧厲 接著，如第5g圖所示’依序進行後續製程，以形成 閘極（512, 514)、層間介電層516、導線518、覆蓋層 520、及透明電極（畫素電極）524，由於此部分並非本 發明重點，在此省略說明。最後，完成-有機電激發光 元件5000 ’包括開關薄膜電晶體與驅動薄膜電晶體。上 述開關薄膜電晶體包括閘極512、閘極介電層51〇與第一 主動層；另外，上述驅動薄膜電晶體包括閘極514、閘極 介電層510與第二主動層。其中，第一主動層包括通道 區 506，d、輕摻雜汲極（Hghtly d〇ped drain) 5〇6，b、源/ 汲極506，c;第二主動層包括通道區5〇〜與源/汲極別6d。 第6圖係♦示本發明—較佳實施例中用於顯示影像 之系統。在此，此系統為可以是顯示面板62〇、平面面 板元件640或電子元件_。上述有機電激發光元件可 以裝配於顯示面板而作成有機電激發光二極體面板。如 第6圖所示，顯示面板62〇包含有機電激發光元件61〇 例如第2f、 3f與4g分別所示之有機電激發光元件 2000、3000與4000 。在其它實施例中，平面面板元件 640可由顯示面板620與控制器630所構成。在其它實施 例中，顯示面板620也可以構成眾多電子元件的一部份 0773-A31972DTWF 14 201028035 (例如，在此為電子元件600)。一般而言，電子元件600 可以包含平面面板元件640,而平面面板元件640具有顯 示面板620、控制器630與輸入元件650。而且，輸入元 件650係與平面面板元件640耦接，且提供輸入訊號（例 如，影像訊號）至顯示面板620以產生影像。電子元件600 可以是行動電話、數位相機、個人數位助理（personal digital assistant; PDA)、筆記型電腦、桌上型電腦、電視、 車上顯示器或可攜式DVD播放機。 • 綜上所述，本發明幾個較佳實施例藉由一準分子雷 射退火（excimer laser anneal; ELA)步驟，在緩衝層上 或下、或在閘極絕緣層上增加額外的保護膜或金屬膜， 造成用於開關之薄膜電晶體（switching TFT)與用於驅 動之薄膜電晶體（driving ITT )具有不同的結晶效果。 結果，具有上述不同的結晶效果之薄膜電晶體的主動矩 陣型有機電激發光元件則會有較均勻之驅動電流，而避 免產生顏色不均（Mura )的缺陷。 ❹ 【圖式簡單說明】 第1圖係繪示一主動矩陣式有機電激發光元件中一 個晝素之等效電路圖。 第2a〜2f圖係繪示本發明一較佳實施例中有機電激 發光元件之製造方法的剖面圖。 第3a〜3f圖係繪示本發明另一較佳實施例中有機電 激發光元件之製造方法的剖面圖。 0773-A31972DTWF 15 201028035 第4a〜4g圖係繪示本發明又一較佳實施例中有機電 激發光元件之製造方法的剖面圖。 第5a〜5g圖係繪示本發明又一較佳實施例中有機電 激發光元件之製造方法的剖面圖。 第6圖係繪示本發明一較佳實施例中用於顯示影像 之系統。 【主要元件符號說明】 I〜開關薄膜電晶體區域； II〜驅動薄膜電晶體區域； 100〜 晝素； 102〜 開關薄膜電晶體； 104〜驅動薄膜電晶體； 106〜 有機發光二極體； 108〜 資料線； 110〜 掃描線； 112〜 儲存電容； 200〜 基板； 2Q2〜 緩衝層； 204〜非晶碎層； 204a^ ^多晶矽層； 204b- 、多晶石夕層； 204c^ ^通道區； 204d〜源/汲極； 204’b〜第一主動層； 204，c 〜通道區； 204’d〜輕掺雜没極； 204，e 〜源/>及極； 206〜 保護膜； 208- 準分子雷射退火製程 ， 210〜 閘極介電層； 212〜 閘極； 214〜 閘極； 216〜 層間介電層； 218〜 導線； 220〜保護層； 224〜 透明電極； 300〜 基板； 0773-A31972DTWF 16 201028035 302〜 緩衝層； 304a， -圖案化非晶矽層； 304c’ -多晶矽層； 304，a 〜通道區； 304，c 〜源/汲極； 304，e 〜源/汲極； 308〜 準分子雷射退火製程 309〜 閘極介電層； 312〜 閘極； 316〜 導線， 322〜 透明電極； 402〜 圖案化保護膜； 406〜非晶梦層； .406c〜通道區； 406，b 〜輕摻雜没極； 406’d〜通道區； 406d〜源/汲極； 408〜 準分子雷射退火製程 410〜 閘極介電層； 414〜 閘極； 418〜 •導線； 424〜 •透明電極； 502〜 '圖案化保護膜； 506〜非晶砍層；0773-A31972DTWF 201028035 The polysilicon layer 304c located in the transistor region II of the driving film serves as the second active layer of the subsequently formed driving film transistor. However, in the pseudo-molecular laser annealing process 308, since the protective film 306 can reflect a portion of the laser energy, the polycrystalline germanium layer 304c and the polycrystalline germanium layer 3〇4d have different crystallization effects. In other words, since the polysilicon layer 304b not covered by the protective film 306 is directly irradiated with the complete excimer laser energy, it has a grain of a larger size, and its electron mobility is about l〇〇. Cm2/Vs. On the other hand, since the protective film 306 reflects part of the laser energy, the underlying polysilicon layer 304c has a small grain size, but the grain uniformity increases, and its electron mobility is less than about 1 〇〇. Cm2/V_s. As shown in Fig. 3e, a gate dielectric layer 309 is formed to cover the patterned polysilicon layer such as the first active layer and the second active layer, and the buffer layer 302. Then, as shown in FIG. 3f, subsequent processes are sequentially performed to form a gate (310, 312), an interlayer dielectric layer 314, a wire 316, a cap layer 318, and a transparent electrode (alkali electrode) 322. The part is not the focus of the present invention, and the description is omitted here. Finally, an organic electroluminescent device 3000 is completed, including a switching thin film transistor and a driving thin film transistor. The switching thin film transistor includes a gate 310, a gate dielectric layer 309 and a first active layer; in addition, the driving thin film transistor includes a gate 312, a gate dielectric layer 309 and a second active layer. The first active layer includes a channel region 304'a, a lightly doped drain 304'b, and a source/drain 304'c; the second active layer includes a channel region 304'd and a source/drain 0773-A31972DTWF 10 201028035 3044 ° Third Embodiment FIGS. 4a to 4g are cross-sectional views showing a method of manufacturing an organic electroluminescent device according to still another preferred embodiment of the present invention. As shown in Fig. 4a, a patterned protective ruthenium film 402 is formed on the substrate 400 including the switching thin film transistor region I and the driving thin film transistor region II. The patterned protective film is located in the transistor region II of the driving film. The material of the patterned protective film 402 includes yttrium oxide (SiOx), tantalum nitride (SiNx), yttrium oxynitride (SiOxNy), or a stacked structure thereof. As shown in Fig. 4b, a buffer layer 404 is formed over the patterned protective film 402 and the substrate 400. Next, an amorphous germanium layer 406 is formed over the buffer layer 404 as shown in Figure 4c. As shown in Fig. 4d, a pseudo-molecular laser annealing process 408 is performed on the amorphous germanium layer 406 to convert the amorphous germanium layer 406 into a poly germanium layer ^ (406a, 406b). As shown in Fig. 4e, the polycrystalline dream layer (406a, 406b) is patterned to form patterned polysilicon layers 406'a and 406b. Wherein, the polysilicon layer 406'a in the transistor film region I is used as the first active layer of the subsequently formed switching film transistor, and the polysilicon layer 406b in the driving film transistor region II is used as the subsequently formed driving film. The second active layer of the transistor. However, in the excimer laser annealing process 408, since the patterned protective film 402 can reflect part of the laser energy, 0773-A31972 DTWF 11 201028035 thus results in patterned polycrystalline germanium layers 406, a and 4 〇 6b and *Ubb has different crystallization effects. In other words, since the patterned polysilicon layer 4, the solar layer 406 is directly exposed to the excimer laser energy, and the ancient τ M has a larger size of crystal grains. (grain), and its electron mobility is about 1 2 2/v_s. On the other hand, 'because the patterned protective film 402 absorbs part of the laser energy, the grain of the patterned polycrystalline germanium layer 406, a above The size is small, but the grain uniformity (Uniformity) increases, and the electron mobility is less than about 100 cm 2 /Vs. ❺ As shown in Fig. 4f, a gate dielectric layer 41 is formed to cover the first active layer. The polysilicon layer and the buffer layer 402 are patterned with the second active layer, etc. Next, as shown in FIG. 4g, subsequent processes are sequentially performed to form a gate (412 ' 414), an interlayer dielectric layer 416, a wire 418, and an overlay. Layer 420, and The transparent electrode (pixel electrode) 424, since this portion is not the focus of the present invention, the description is omitted here. Finally, the completion of an organic electroluminescent device 4000' includes a switching film transistor and a driving film transistor. The above switching film transistor includes The gate electrode 412, the gate dielectric layer 41A and the first active layer; further, the driving thin film transistor includes a gate 414, a gate dielectric layer 410 and a second active layer. The first active layer includes a channel a region 406'd, a lightly doped drain 406, b, a source/drain 406c, and a second active layer including a channel region 4〇6c and a source/dimpole 4〇6d. 5a~5g are cross-sectional views showing a method of manufacturing an organic electro-optic 0773-A31972 DTWF 12 201028035 excitation light element according to another preferred embodiment of the present invention. As shown in Fig. 5a, a switching thin film is included. A patterned protective film 502 is formed on the substrate I and the substrate 500 of the driving thin film transistor region II. The patterned protective film is located in the driving film transistor region II. The protective film 502 includes any metal material. As shown in Fig. 5b, a buffer layer 504 is formed over the patterned protective film 502 and the substrate 500. Next, an amorphous germanium layer 506 is formed over the buffer layer 504. As shown in Fig. 5c, as shown in Fig. 5d, a pseudo-molecular laser annealing process 508 is performed on the amorphous germanium layer 506 to convert the amorphous germanium layer 506 into a polysilicon layer (506a, 506b). As shown in Fig. 5e, the polysilicon layer (506a, 506b) is patterned to form patterned polysilicon layers 506'a and 506b. Wherein, the polysilicon layer 506'a located in the transistor region I of the switching film is used as the first active layer of the subsequently formed on/off film transistor, and the polysilicon layer 506b located in the transistor region II of the driving film is formed as a subsequent layer. Driving a second active layer of the thin film transistor. However, in the excimer laser annealing process 508, since the patterned protective film 502 dissipates heat faster than other portions, the patterned polysilicon layers 506'a and 506b have different crystallization effects. In other words, since the patterned polysilicon layer 506'a is directly exposed to the complete quasi-molecular laser energy, it has a larger size grain and an electron mobility of about 100 cm2/V-s. On the other hand, the crystal 0783-A31972DTWF 13 201028035 of the patterned polysilicon layer 506'a over the patterned protective film 502 has a higher uniformity but an electron mobility of less than about 1 〇〇cm2/V s. As shown in Fig. 5f, a gate dielectric layer 510 is formed to cover the patterned polycrystalline layer and the buffer layer 502 such as the first active layer and the first active layer. And then, as shown in FIG. 5g, the subsequent processes are sequentially performed to form a gate (512, 514), an interlayer dielectric layer 516, a wire 518, a cap layer 520, and a transparent electrode (pixel electrode) 524. Since this part is not the focus of the present invention, the description is omitted here. Finally, the completed-organic electroluminescent element 5000' includes a switching thin film transistor and a driving thin film transistor. The switching thin film transistor includes a gate 512, a gate dielectric layer 51 and a first active layer; in addition, the driving thin film transistor includes a gate 514, a gate dielectric layer 510 and a second active layer. Wherein, the first active layer comprises a channel region 506, d, a lightly doped pedestal 5 〇 6, b, a source/drain 506, c; the second active layer includes a channel region 5 〇 〜 Source / bungee not 6d. Figure 6 is a diagram showing a system for displaying an image in the preferred embodiment of the present invention. Here, the system may be a display panel 62, a planar panel element 640 or an electronic component. The organic electroluminescent device can be mounted on a display panel to form an organic electroluminescent diode panel. As shown in Fig. 6, the display panel 62A includes organic electroluminescence elements 61, for example, organic electroluminescent elements 2000, 3000 and 4000 shown in Figs. 2f, 3f and 4g, respectively. In other embodiments, planar panel component 640 can be comprised of display panel 620 and controller 630. In other embodiments, display panel 620 can also form part of a multitude of electronic components 0773-A31972 DTWF 14 201028035 (e.g., electronic component 600 herein). In general, electronic component 600 can include planar panel component 640, while planar panel component 640 has display panel 620, controller 630, and input component 650. Moreover, input component 650 is coupled to planar panel component 640 and provides an input signal (e.g., image signal) to display panel 620 to produce an image. The electronic component 600 can be a mobile phone, a digital camera, a personal digital assistant (PDA), a notebook computer, a desktop computer, a television, an on-board display, or a portable DVD player. • In summary, several preferred embodiments of the present invention add an additional protective film on or under the buffer layer or on the gate insulating layer by an excimer laser anneal (ELA) step. Or a metal film, which causes a switching TFT for switching to have a different crystallization effect from a driving TFT for driving. As a result, the active matrix type organic electroluminescence element of the thin film transistor having the above different crystallization effects has a relatively uniform driving current and avoids the occurrence of color unevenness (Mura). ❹ [Simple description of the diagram] Figure 1 shows the equivalent circuit diagram of a halogen in an active matrix organic electroluminescent device. 2a to 2f are cross-sectional views showing a method of manufacturing an organic electroluminescent element in a preferred embodiment of the present invention. 3a to 3f are cross-sectional views showing a method of manufacturing an organic electroluminescent device in another preferred embodiment of the present invention. 0773-A31972DTWF 15 201028035 FIGS. 4a to 4g are cross-sectional views showing a method of manufacturing an organic electroluminescent device in still another preferred embodiment of the present invention. 5a to 5g are cross-sectional views showing a method of manufacturing an organic electroluminescent device in still another preferred embodiment of the present invention. Figure 6 is a diagram showing a system for displaying an image in a preferred embodiment of the present invention. [Main component symbol description] I ~ switch film transistor region; II ~ drive film transistor region; 100~ halogen; 102~ switch film transistor; 104~ drive film transistor; 106~ organic light-emitting diode; ~ data line; 110~ scan line; 112~ storage capacitor; 200~ substrate; 2Q2~ buffer layer; 204~ amorphous layer; 204a^^ polycrystalline layer; 204b-, polycrystalline layer; 204c^ ^ channel area 204d~source/drain; 204'b~first active layer; 204,c~channel area; 204'd~lightly doped immersion; 204,e~source/> and pole; 206~ protective film; 208- excimer laser annealing process, 210~ gate dielectric layer; 212~ gate; 214~ gate; 216~ interlayer dielectric layer; 218~ wire; 220~ protective layer; 224~ transparent electrode; Substrate; 0773-A31972DTWF 16 201028035 302~ buffer layer; 304a, - patterned amorphous germanium layer; 304c'-polycrystalline germanium layer; 304, a ~ channel region; 304, c ~ source / drain; 304, e ~ source / Bungee; 308~ excimer laser annealing process 309~ gate dielectric layer; 312~ gate; 316~ wire, 322~ transparent electrode; 402~ patterned protective film; 406~ amorphous layer; .406c~ channel area; 406, b ~ lightly doped 406'd~channel region; 406d~source/drain; 408~ excimer laser annealing process 410~ gate dielectric layer; 414~ gate; 418~ • wire; 424~ • transparent electrode; 'Patterned protective film; 506~ amorphous chopped layer;
304〜非晶矽層； 304b〜圖案化非晶矽層； 3 04 d〜多晶秒層； 304’b〜輕摻雜汲極； 304’d〜通道區； 306〜保護膜； > 310〜閘極； 314〜層間介電層； 318〜保護層； 400〜基板； 404〜缓衝層； 406a〜多晶發層； 406’a〜圖案化多晶矽層； 406’c〜源/汲極； 406b〜圖案化多晶矽層； 412〜閘極； 416〜層間介電層； 420〜保護層； 500〜基板； 5 04〜緩衝層； 506a〜多晶碎層； 0773-A31972DTWF 17 201028035 506c〜通道區； 506’a、506b〜圖案化多晶矽層； 506’b〜輕摻雜汲極； 506’c〜源/汲極； 506’d〜通道區； 506b〜圖案化多晶矽層 506d〜源/汲極； 508〜準分子雷射退火製程； 510〜閘極介電層； 514〜閘極； 518〜導線； 524〜透明電極； 610〜有機電激發光元件； 630〜控制器； 650〜輸入元件； 2000〜有機電激發光元件 4000〜有機電激發光元件 512〜閘極； 516〜層間介電層； 520〜保護層； 600〜電子元件； 620〜顯示面板； 640〜平面面板元件； 3000〜有機電激發光元件；304~amorphous germanium layer; 304b~patterned amorphous germanium layer; 3 04 d~polycrystalline second layer; 304'b~lightly doped drain; 304'd~channel region; 306~protective film; > 310 ~ gate; 314~ interlayer dielectric layer; 318~ protective layer; 400~ substrate; 404~ buffer layer; 406a~ polycrystalline layer; 406'a~ patterned polysilicon layer; 406'c~ source/bungee 406b~ patterned polysilicon layer; 412~ gate; 416~ interlayer dielectric layer; 420~protective layer; 500~ substrate; 5 04~ buffer layer; 506a~ polycrystalline layer; 0773-A31972DTWF 17 201028035 506c~ channel 506'a, 506b~ patterned polysilicon layer; 506'b~lightly doped drain; 506'c~ source/drain; 506'd~channel region; 506b~ patterned polysilicon layer 506d~source/汲508~excimer laser annealing process; 510~gate dielectric layer; 514~gate; 518~ wire; 524~transparent electrode; 610~organic electroluminescent element; 630~ controller; 650~ input element 2000~organic electroluminescent element 4000~organic electroluminescent element 512~gate; 516~interlayer dielectric layer; 520 The protective layer; 600~ electronic component; 620~ display panel; 640~ plane of the panel element; 3000~ organic electroluminescent element;
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