TW201027120A - Projection optical system, exposure apparatus, and device manufacturing method - Google Patents

Abstract

An object is to provide a projection optical system, for example, capable of improving the throughput of scanning exposure in application to scanning exposure apparatus. A projection optical system (PL) for forming an image of a first surface (Ma) and an image of a second surface (Mb) on a third surface (W) comprises a first imaging optical system (G1), a second imaging optical system (G2), a third imaging optical system (G3), a fourth imaging optical system (G4), a fifth imaging optical system (G5), a sixth imaging optical system (G6), a seventh imaging optical system (G7), a first folding member (FM: R37) disposed between the third imaging optical system and the seventh imaging optical system, and a second folding member (FM: R67) disposed between the sixth imaging optical system and the seventh imaging optical system.

Description

201027120 VI. Description of the Invention: [Technical Field] The present invention relates to a projection optical system, an exposure apparatus, and a component manufacturing method, and more particularly to a method suitable for manufacturing by photolithography A projection optical system of an exposure device of a semiconductor element and a component such as a liquid crystal display element. [Prior Art] In the photolithography process for manufacturing semiconductor elements and other components, a photosensitive substrate (which is coated with a photoresist or the like) is used via a projection optical system using a #-exposure device. The pattern of the reticle (main reticle) is subjected to scanning exposure. The conventional scanning exposure apparatus is configured to alternately repeat the following two operations: an operation of scanning the exposure light in one of the irradiation areas (10); and the sensitivity The operation of moving the substrate stepwise to the next irradiation region (for example, see Patent Document ^). [Citation List] Patent Document 1. Re-granted U.S. Patent No. 37391 [Summary of the Invention] Sensing used in the photolithography process Recently, research has been directed toward the size of an improved substrate. At 201027120, the total throughput of the lithography process will decrease as the number increases. An embodiment of the present invention provides a projection optical system which, for example, can improve the total throughput of scanning exposure applied to a scanning exposure apparatus. An embodiment of the present invention provides an exposure apparatus capable of improving the total processing amount of scanning exposure by using the projection optical system of the embodiment of the present invention. The first aspect of the present invention provides a projection optical system for forming an image of a first surface and an image of a second surface on a third surface, comprising: a first imaging optical system, the setting Among the optical paths between the first surface and the first common point, the first conjugate point is optically co-located with a point on the first surface and the optical axis is at the point and the a first surface intersecting; a second imaging optical system disposed in an optical path between the first conjugate point and the second conjugate point, the second conjugate point being located on the first surface The point produces an optical conjugation and the optical axis intersects the first surface at the point; the third imaging optical system 'is disposed between the optical path between the second conjugate point and the third conjugate point a third conjugate point optically conjugate with the point on the first surface and an optical axis intersecting the first surface at the point; a fourth imaging optical system disposed between the second surface Among the optical paths between the fourth conjugate point, a fourth conjugate point is optically co-located with a point on the second surface and the optical axis intersects the second 201027120 surface at the point; a fifth imaging optical system that sets the optical between the five conjugate points The point on the two surfaces of the path produces an optical common surface intersection; disposed between the fourth conjugate point and the fifth conjugate point and the second optical axis at the point and the second a sixth imaging optical system disposed in an optical path between the fifth conjugate point and the sixth conjugate point, the sixth conjugate point being located at the

The point on the two surfaces is optically conjugated and the optical axis intersects the second surface at the point; a seventh imaging optical system disposed between the third surface and the second common point and the sixth Among the optical paths between the conjugate points; a first deflecting member disposed between the surface closest to the third surface among the third imaging optical systems and the closest to the seventh imaging optical system Between the optical paths between the surfaces of a surface, and configured to direct light from the third imaging optical system to the seventh imaging optical system; and a second deflecting member disposed between the sixth An optical path between a surface of the imaging optical system closest to the third surface and a surface of the seventh imaging optical system that is closest to the second surface, and configured to receive the sixth imaging optics Light of the system is directed to the seventh imaging optical system, wherein each of the optical devices having magnification in the seventh imaging optical system is a refractive optical device. A second aspect of the present invention provides a projection optical system for forming an image of a first surface and an image of a second surface on a third surface of 7 201027120, which is used in an exposure apparatus for setting up at the first A predetermined pattern on at least one of the surface and the second surface is transferred to a photosensitive substrate set up on the third surface, the projection optical system comprising: a first optical unit that will be from the first surface Light is directed to the path coupling element; a second optical unit that directs light from the second surface to the path coupling element; and a third optical unit that has been coupled through the path from the first optical unit Forming an image of the first surface on the third surface based on light, and forming an image of the second surface on the third surface based on light from the second optical unit having advanced through the path coupling element The first surface, the second surface, and the third surface extend horizontally in a space below the projection optical system, and wherein The third surface is located below the first surface and the second surface. A third aspect of the present invention provides an exposure apparatus including a projection optical system, a first surface and a second viewpoint from a third surface of light on a predetermined pattern set thereon At least one of the second surfaces is based on the projection of the predetermined pattern on the substrate. A fourth aspect of the present invention provides an exposure apparatus comprising: a projection optical system for the image of the first surface and the image of the second surface on the third surface, which is used for a predetermined pattern on at least one of the first surface and the second surface is transferred to a photosensitive substrate set on the third surface, the exposure device comprising: a first illumination unit located at the first a lower surface of the surface and providing a first illumination light to the first surface, a second illumination unit located below the second surface and providing a second illumination light to the second surface, wherein the first The surface, the second surface, and the third surface horizontally extend in a space below the projection optical system. A fifth aspect of the present invention provides a device manufacturing method comprising: performing an exposure of the predetermined pattern on the photosensitive substrate by using an exposure apparatus of the third or fourth aspect; developing the printed image thereon The photosensitive substrate of the predetermined pattern is used to form a photomask layer having a shape corresponding to the predetermined pattern on the surface of the photosensitive substrate; and the surface of the photosensitive substrate is processed through the photomask layer. EFFECT OF THE INVENTION Since the projection optical system according to the first aspect of the present invention employs a double-headed basic configuration of the quadruple imaging type as described above, it ensures that the image side numerical aperture has a necessary level and ensures that there will be An effective image area and, for example, an image of a pattern on two object planes separated from each other can be formed in parallel in a predetermined area on the image plane. Since the projection optical system according to the second aspect of the present invention employs a configuration in which the first surface and the second surface of the individual reticle are present, 9 201027120 has a third surface of the wafer and the The projection optical system is separated by a long distance, so that the moving space of the reticle stage holding the reticle can be separated from the moving space of the wafer platform holding the wafer. As a result, for example, when the projection optical system of the first aspect or the second aspect is applied to the scanning exposure apparatus, printing is performed in one of the irradiation areas of the photosensitive substrate by a single ϋ in a stacked manner, Two different patterns. In addition, by simply moving the photosensitive substrate in the scanning direction, scanning exposure can be continuously performed in a plurality of illumination regions aligned in the scanning direction without performing two-dimensional implementation on the photosensitive substrate. Stepping movement" In other words, when the projection optical system according to the first aspect or the second aspect of the present invention is applied to a scanning exposure apparatus, the total processing amount of the scanning exposure is remarkably improved, and finally, the extremely high total The amount of processing is used to fabricate the device. [Embodiment] A projection optical system according to an embodiment of the present invention includes: a first optical unit having a first imaging optical system, a second imaging optical system, and a third imaging optical system; and a second optical unit having a a fourth imaging optical system, a fifth imaging optical system, and a sixth imaging optical system; and a third optical unit having a seventh imaging optical system, and the projection optical system is configured to be formed on the third surface (image plane) An image of the first surface (first object plane) and an image of the second surface (second object plane). The first imaging optical system is disposed in an optical path between the first surface and the first conjugate point, the first conjugate point being optically conjugated to a point on the axis of the optical 10 201027120; a second imaging optical system disposed in an optical path between the first conjugate point and the second conjugate point, the second conjugate point being optically conjugated to the point on the optical axis; The third imaging optical system is disposed in an optical path between the second conjugate point and the third conjugate point, the third conjugate point being optically co-located with the point on the optical axis yoke. The fourth imaging optical system is disposed in an optical path between the second surface and the fourth common vehicle point. The fourth common vehicle point is optically conjugate with a point on the optical axis®; a fifth imaging optical system disposed in an optical path between the fourth conjugate point and a fifth conjugate point, the fifth conjugate point being optically conjugate with the point on the optical axis; A sixth imaging optical system is disposed in an optical path between the fifth conjugate point and the sixth common point, the sixth conjugate point being optically shared with the point on the optical axis. The seventh imaging optical system is disposed in an optical path between the third surface and the third common point and the sixth common point. Q The projection optical system of this embodiment of the invention includes: a first deflecting member that directs light from the third imaging optical system to the seventh imaging optical system; and a second deflecting member 'which will be from the sixth imaging The light of the optical system is guided to the seventh imaging optical system, and each of the optical devices having the magnification in the seventh imaging optical system is a refractive optical device. In other words, the seventh imaging optical system is a refractive optical system. The first deflecting member is disposed in an optical path between the third imaging optical system and the seventh: image optical system; and 兮 _ 丄 T, and the second deflecting member is disposed between The optical path between the sixth imaging optical system and the first seven imaging optical system between 201027120. In the projection optical system of the embodiment of the present invention constructed as such, the first imaging optical system forms a first intermediate image at or near the first conjugate point based on light from the first surface, The second imaging optical system forms a second intermediate image at or near the second conjugate point based on light from the first intermediate image, the third imaging optical system using light from the second intermediate image The base forms a third intermediate image at or near the third common vehicle point, and the seventh imaging optical system forms a first final image on the third surface based on light from the third intermediate image. ❹ On the other hand, the fourth imaging optical system forms a fourth intermediate image at or near the fourth conjugate point based on the light from the second surface, the fifth imaging optical system from the fourth intermediate image Forming a fifth intermediate image at or near the fifth conjugate point based on the light, the sixth imaging optical system forming a sixth at or near the sixth conjugate point based on light from the fifth intermediate image An intermediate image, and the seventh imaging optical system forms a second final image on the third surface based on light from the sixth intermediate image. ❿ Since the projection optical system of this embodiment of the present invention adopts the double-head basic configuration of the quadruple imaging type as described above, it can ensure that the image side numerical aperture has a necessary level and ensures an effective image area. And, for example, an image of a pattern on two object planes separated from each other can be formed in parallel in a predetermined area on the image plane. As a result, for example, when the projection optical system of the embodiment of the present invention is applied to a scanning exposure apparatus, it is capable of forming two masks spaced apart from each other in the effective image area of the projection optical system. The image of the pattern and the ability to print two different patterns in one of the illumination areas of the photosensitive substrate in a stacked manner by a single scanning operation. The exposure device is configured to perform an operation of scanning exposure of the pattern of the first mask in the first illumination area, and in a second illumination area adjacent to the first illumination area in the scanning movement direction The pattern of the second mask is subjected to a scanning exposure operation, and the scanning of the pattern © of the first mask is performed in the third irradiation region in the scanning movement direction beside the second irradiation region, and the operation is repeated. The number of times required can be continuously performed by scanning the photosensitive substrate in a plurality of irradiation regions aligned in the scanning direction only by moving the photosensitive substrate along the scanning direction, without performing two operations on the photosensitive substrate. The stepping movement of the dimension. In other words, when the projection optical system of the embodiment of the present invention is applied to the scanning exposure apparatus, the total processing amount of the scanning exposure is remarkably improved. For example, when the projection optical system of this embodiment of the present invention is applied to a semiconductor exposure apparatus, it can be configured as an optical system having a reduction ratio. In the projection optical system of this embodiment of the invention, the first imaging optical system and the third imaging optical system, and the fourth imaging optical system and the sixth imaging optical system are also configurable to be identical to the seventh imaging optical system Refractive system. In this case, since the refractive optics can be made to have stable surface accuracy, the stability of the optical systems can be improved and the manufacturing cost of the optical systems can be reduced. In the projection optical system of this embodiment of the invention, the first optical unit (which is an optical system from the first surface to the first deflecting member) and 13 201027120 the second optical unit (which is from the second The surface to the optical system of the second deflecting member may have the same configuration. This allows the projection optical system to have a configuration that is symmetrical to the optical axis of the seventh imaging optical system, thereby making it possible to improve the stability of the optical system, simplify the configuration of the optical system, and reduce the manufacturing cost of the optical system. . In the projection optical system of this embodiment of the invention, when each of the second imaging optical system and the fifth imaging optical system adopts a configuration having a concave reflecting mirror, the projection optical system is not only for color In addition to the correct correction of the chromatic aberration, it is ensured that there is a large image side numerical aperture. When each of the second imaging optical system and the fifth imaging optical system adopts a configuration having a negative lens, more specifically, when the negative lens is disposed in the vicinity of the concave reflecting mirror, Good compensation for the Petzval sum and (Petzval sum). In the projection optical system of this embodiment of the invention, the third deflecting member may be disposed in an optical path between the first surface and the __ deflecting member; and the fourth deflecting member is disposed between In the optical path between the second surface and the second deflecting member. Specifically, the third deflecting member may be disposed in an optical path between the first imaging system and the third imaging optical system, and the fourth The deflecting member may then be disposed in an optical path between the fifth imaging optical system and the sixth imaging optical system. In this case, the second deflecting member is disposed near the second common vehicle point, and when the fourth deflecting member is disposed near the fifth common point, it becomes more suitable. In the second imaging optical system and each of the fifth imaging optical systems, a go-go beam and a back beam are referenced by the concave reflecting mirror 201027120. Separation. Alternatively, the third deflecting member may be disposed in an optical path between the first imaging optical system and the second imaging optical system, and the fourth deflecting member may be disposed between the fourth imaging optics Among the optical paths between the system and the fifth imaging optical system. In this case, the third deflecting member is disposed near the first common vehicle point, and when the fourth: facing member is disposed near the fourth common point, the same becomes more suitable. The outgoing beam is separated from the return beam by a reference to the concave reflecting mirror in each of the second imaging optical system and the fifth imaging optical system. As a result, there is no need to establish a large space between the first effective field region and the optical axis on the first surface and there is no need to establish a large space between the second effective field region and the optical axis on the second surface, thereby The maximum image height on the third surface can be lowered, and in turn it becomes easier to achieve the purpose of reducing the size of the optical system. In the projection optical system of this embodiment of the invention, the first deflecting portion Q may be disposed in the vicinity of the third conjugate point and the second deflecting member may be disposed in the vicinity of the sixth conjugate point. In this case, the space between the optical axis and the first effective image area formed on the third surface corresponding to the first effective field region on the first surface can be made smaller and A space between the optical axis and a second effective image area formed on the third surface corresponding to the second effective field region on the second surface becomes smaller. As a result, the maximum image height on the third surface is lowered, and in turn, it becomes easier to achieve the purpose of reducing the size of the optical system. The projection optical system of this embodiment of the present invention may have a first effective field region on the first surface 15 201027120 that does not include the optical axis of the first imaging optical system and may not include the first surface field on the second surface The second effective field region of the optical axis of the four imaging optical system, and the following conditional expressions (1) and (2) are satisfied. In the conditional expressions (1) and (7), l〇i is a distance between an optical axis of the seventh imaging optical system and a first effective image region formed on the third surface corresponding to the first effective field region. #l〇2 is the distance between the optical axis of the seventh imaging optical system and the second effective image area formed on the third surface of the ninth corresponding to the second effective field. Further, B is the maximum image height on the third surface. _ 0.05 <LOl / B < 0.4 ( 1 ) 0.05 < LO2 / B < 0.4 (2) When the ratio is less than the lower limit of the conditional expressions (1) and (2), it will be in the concave reflecting mirror The path separation of the forward path and the back path for the reference results in an excessive limitation of the amount of aberration occurring at each conjugate point. When the ratio is greater than the upper limit of the conditional expressions (丨) and (2), it causes an increase in the scale of the projection optical system and increases scanning of the two mask patterns in the illumination area by a single scanning operation. The desired scanning distance for the exposure will result in a decrease in the total throughput. In order to better achieve the utility of the embodiment of the present invention, the lower limits of the conditional expressions (丨) and (2) can be set to 0·1 〇. In order to better achieve the utility of the embodiment of the present invention, the upper limit of the conditional expressions (丨) and (2) can be set to 〇32. The projection optical system of this embodiment of the present invention is arranged such that the normal to the reflective surface of each of the deflecting members and the optical axis form 45. Then, the optical axes of the individual imaging optical systems may be parallel or perpendicular to each other 16 201027120 and they may ultimately contribute to the configuration in which the optical systems may be employed, in which the second deflecting member is fired: The optical axis of the reflective surface of the deflecting member forms 45. Wherein the surface is arranged to be aligned with the reflective surface of the seventh imaging optical system, the third deflecting member, and the optical axis of the first imaging optical system, and wherein the reflective surface of the cleaved component is arranged And the optical axis of the fourth imaging optical system forms 45 °. In the projection optical system of this embodiment of the invention, the reflective surface of the first deflecting member and the reflective surface of the third deflecting member may be arranged to be flat with each other and the reflective surface of the first deflecting member and the fourth deflecting member The reflective surfaces may be arranged parallel to each other. In this configuration, the angle of incidence of the light incident on the reflective surface of the tangential member adjacent to the conjugate point will be different, but will be focused on one of the rays to be associated with the first deflecting member or The reflective surface of the fourth deflecting member forms 45. + "The incident light incident at the incident angle will be incident on the reflective surface of the first deflecting member or the second deflecting member at an incident angle of 45. Therefore, the average value of the incident angles in the two reflections becomes close to 45. For example, in the reflection of ArF excimer laser light as the light for exposure, 'only a limited amount of film material has a small absorption loss, and it is difficult to increase the number of layers. For this reason, The reflection coefficient and phase modulation of the reflective surface may have a difference (incident angle characteristic) depending on the incident angle of the light. However, when the pair of reflective surfaces in the arrangement employed in the projection optical system are parallel to each other as described above, It is possible to average the incident angles in the two reflections and suppress the influence of the incident angle characteristics of the reflective surfaces. 17 201027120 = second:: good imaging performance of the temple. When interposed between the third deflecting component and the AB component The imaging magnification of the inter-optical system and the imaging ratio between the 哕坌 biasing member and the optical system between the 为 伯 A 该 该 该 该 该 该 向 向 向 向 向 向 向 向 向 向 向 向 向Ratio: (1 image formation), as the angle of action of times "in. It is better to achieve the angle of incidence of the human angle in the two reflections. The third deflecting member is disposed at the imaging magnification point of the second imaging optical system between the first imaging system and the sixth imaging optical system. 3 and the imaging system of the sixth imaging system can be mu μ & like the first learning system to satisfy the following conditions to express equations (3) and (4).昼: ΐ It is assumed that the light and 哕H ′′ between the second conjugate point and the third conjugate point are on the first surface and the optical axis is at the same point, the intersection of the points produces optics A total of vehicles, and it is assumed that there is no point in the optical path between the fifth == and the sixth common point of the intersection of the bit:::: face and the optical axis intersects the second surface The dot is optically light. °-5<|y5 3|<2.0 (3) °·5<| β 6|<2.0 (4) Alternatively, the third deflecting member is disposed in the first imaging optical system 'Between the second imaging optical system and the fourth deflection disposed in the configuration between the fourth imaging optical system and the fifth imaging optical system' by the second imaging optical system and the third imaging The imaging magnification center of a synthetic optical system composed of the optical system and the imaging magnification point 56 of the synthetic optical system composed of the fifth imaging optical system 18 201027120 and the sixth imaging optical system can satisfy the following conditional expression ( 5) and (4). However, this paper assumes that the third common point and the first No point other than the second common point in the optical path between the two points will be optically light and false at the point on the first surface where the optical axis will intersect the first surface. No point other than the fifth common point in the optical path between the common point and the fourth common point will be on the second surface and the optical axis will intersect the second surface The point produces an optical 〇 conjugate. 〇.5<|泠23|<2·0 (5) 〇.5<|cold 56|<2.0 (6) when the conditional expressions (3) to (4) are not satisfied It is difficult to suppress the influence of the incident angle characteristics of the reflective surfaces of the individual deflecting members, and the deterioration of the imaging performance will cause a difference in line width between the vertical pattern and the horizontal pattern to be formed in the same line width or Between the two isolated equal-width lines, the line width difference is. In order to better achieve the utility of the embodiment of the present invention, the lower limit of the conditional expressions (7) to (6) can be set to 〇 8. More preferably. To achieve the utility of the embodiment of the present invention, the upper limit of the conditional expressions (3) to (6) can be set to 1. 6. When the projection optical system of this embodiment of the present invention is arranged such that the normal of the reflecting surface of the member and the optical axis form 45, then ^ can more satisfy the following conditional expression (7), Wherein A3 is the incident angle of light emitted from the first effective field region on the first surface to the reflective surface of the third deflecting member, and A1 is the same light emitted to the inverse 201027120 emitting surface of the first deflecting member. Incident angle. The following condition is expressed to represent the incident angle of the second effective field region to the first line on the equation (8), and A2 is the incident angle of the same light beam emitted. Furthermore, the projection optical system Further, wherein A4 is a light deflecting surface from the second surface of the second deflecting member, the reflective surface 70 < (A1+A3) <11〇. (7) 70. < ( A2+A4) <11〇. (8) Conditional expressions (7) and (4) are used between α and α, which are directly defined to maintain good imaging performance while suppressing the influence of incident angle characteristics of the reflecting surfaces of the individual deflecting members. A conditional expression of the necessary range of differences. In order to more effectively achieve the utility of the embodiment of the present invention, the lower limit of the conditional expressions (7) and (8) can be set to 80. . In order to better achieve the utility of the embodiment of the present invention, the upper limit of the conditional expressions (7) and (8) can be set to 105. . When the beams incident on the reflecting surfaces of the individual deflecting members are telecentric in the projection optical system of the embodiment of the present invention, the imaging performance variation in the effective image regions on the image plane can be suppressed. When the angle between the optical yoke and the chief ray incident on the reflective surface of each of the deflecting members is greater than 5, the imaging performance in the effective image area may vary greatly. In this case, such A concave reflecting mirror may be disposed near the pupil position of the second imaging optical system and the fifth imaging optical system, and each of the first imaging optical system and the fifth imaging optical system may have a positive lens As a field lens 'to gather the telecentric chief ray. Specifically, the third deflecting member is disposed between the second imaging optics 20 201027120 system and the second imaging optical system, and the fourth deflecting member is disposed between the fifth imaging optical system and the sixth imaging optical system A configuration that can be employed in the configuration between the third imaging optical system and the sixth imaging optical system is an optical system that is telecentric on the injection side and on the exit side, and the optical sleeve and the first surface An angle between a principal ray of the third imaging optical system incident at each of the first effective field regions and the optical pre-axis and the third imaging optics are emitted from each of the first effective field regions The angle between the chief rays of the system will not be greater than 5. . Similarly, an angle between the © optical axis and a principal ray incident from the second effective field region on the second surface to the chief ray of the sixth imaging optical system, and the optical axis and the second effective field The angle between the chief rays of the sixth imaging optical system at each point in the zone may not be greater than 5». Or a configuration in which the third deflecting member is disposed between the first imaging optical system and the first imaging optical system and the fourth deflecting member is disposed between the fourth imaging optical system and the fifth imaging optical system A configuration that may be employed in the case where the second imaging optical system and the fifth imaging optical system are optical systems that are telecentric on the injection side and the third imaging optical system and the sixth imaging optical system are on the emission side For telecentric optical systems. Further 'the optical axis and an angle between the principal ray of the second imaging optical system incident from each of the first effective field regions on the first surface and the optical axis and the first effective field The angle between the chief rays of the third imaging optical system that is emitted at each point in the zone may not be greater than five. . Similarly, the optical axis and an angle between the principal ray of the fifth imaging optical system incident from each of the second effective field regions on the second surface and 21 201027120 the optical axis and the second effective from the second The angle between the chief rays of the sixth imaging optical system that is emitted at each point in the field may not be greater than five. . When the projection optical system of the embodiment of the present invention having the configuration as described above is applied to the exposure apparatus, the first photomask standing on the first surface, and the second mask formed on the second surface And the wafers set on the third surface are arranged on the same side of the projection optical system. In other words, in the projection optical system of this embodiment of the invention, from the first surface and the

The direction of the chief ray emitted at the second surface is opposite to the direction of the chief ray of the person incident on the third surface.虽 Although we consider a configuration of a reticle stage that will move when the reticle is held to hold the wafer-moving wafer platform, it is important in the driving embodiment of the present invention that the first surface, The second surface and the third surface extend horizontally in a space below the projection optical system, and it is important that the third surface is located below the first surface and the second surface. For example, such a configuration can prevent the mutual interference between the reticle stage of the reticle and the wafer platform on which the reticle is held by the top-to-suction force against gravity, as the movement of the light The moving space of the space necessary for the hood platform can be separated from the moving space which is the space necessary for moving the wafer platform. In particular, when the projection optical system adopts a configuration in which the middle surface is located on the same plane as the second surface and the first surface, the second surface, and the third surface are horizontally extended. The configuration of the optical system can be further simplified. It is to be noted that the projection optical system of this embodiment of the present invention may not express the following conditions (9), (1), and (n). In the condition and 22 201027120, the formula (9) to Γ丨丨, the + component and the private owner 'D1 are between the third surface and the optical axis of the seventh-pointing surface and the seventh imaging optical system B is the axial distance, and D2 is the two axial distance between the surface of the third surface and the first component and the optical axis of the seventh imaging optical system. Furthermore, D3 is an auxiliary distance between the reflective surface of the first surface and the first-biased strain + E: Α ί + + and the optical axis of the first imaging optical system, and D4 is the axial distance between the optical axis components of the fourth imaging optical system of the surface of the 以及-Guy & four-biased part...: the surface and the intersection of the first. However, in this specification, the intersection between the 4 surface of the deflecting portion and the optical axis of a corresponding imaging optical system: the intersection between the virtual extension line of the reflective surface and the optical axis • System ΰ ° D3^ h (9) D4^D2 (10) D1=D2 (Π) ❹ ^We consider increasing the size of the wafer (that is, 'using 450mm i曰... then in future exposure devices, the size of the wafer platform must Therefore, the projection optical system of this embodiment of the present invention may have a conditional expression ((1) and (13). In the conditional expression = one), D13 is an intermediary of the optical axis of the third imaging optical system. a distance between the reflective surface of the deflecting member and the optical point of the seventh imaging optical system and the intersection of the reflective surface of the third deflecting member and the optical axis of the first learning system. Furthermore, as in the prior learning system Between the intersection of the reflective surface 23 201027120 of the second deflecting member and the optical axis of the seventh imaging optical system and the intersection of the reflective surface of the fourth deflecting member and the optical axis of the fourth imaging optical system Distance. This 's represents the maximum diameter of the demarcation circle of a wafer (photosensitive substrate). 2.2 <D13/S<5.0 (12) 2.2<D24/S<5.0 (13) When the ratio is smaller than the conditional expression (12) With the lower limit of (13), the space between the reticle stage and the wafer platform will be too small and it is difficult to avoid mutual interference between the platforms. When the ratio is greater than the conditional expression (12) 0 and ( The upper limit of 13) 'the space between the reticle stage and the wafer platform may be too large and may lead to an increase in the scale of the device. To better achieve the utility of the embodiment of the invention, the condition may be expressed The lower limit of the formulas (12) and (13) is set to 2.4. In order to more effectively achieve the utility of the embodiment of the present invention, the upper limit of the conditional expressions (12) and (13) can be set to 4.2. In the projection optical system of the example, the optical path between the projection multi-optical system and the image plane can be filled with liquid. When used in the liquid immersion type configuration © with a liquid immersion area on the image side, it can be guaranteed Will have a large effective image area while ensuring A large effective image side numerical aperture. In the projection optical system of this embodiment of the present invention, when the first deflecting member and the second deflecting member as the path combining member are disposed in an integrally formed manner, The simplification and stabilization effect of the optical system. In the projection optical system of the embodiment of the invention, the line of the rib 24 201027120 formed by the reflective surface of the first deflecting member and the reflecting surface of the second deflecting member may be located The intersection of the optical axis of the imaging system, the optical vehicle of the sixth imaging optical system, and the optical axis of the continuation flute, λ ° seventh imaging optical system . More precisely, the ridge line formed by the virtual extension line of the flat reflecting surface of the first deflecting member and the virtual extending line of the flat reflecting surface of the second deflecting member may be located on the exit side of the third imaging optical system. An intersection between the shaft, the exit side optical axis of the sixth imaging optical system, and the incident side optical axis of the seventh imaging optical system. Here

In this case, the first-biasing member and the second deflecting member can conveniently separate the light traveling from the third imaging optical system to the seventh imaging optical system and proceed from the sixth imaging optical system to the seventh imaging optical The light of the system. The above description applies not only to the projection optical system of the first aspect but also to the projection optical system of the second aspect. An embodiment of the present invention will now be described on the basis of the accompanying drawings. Fig. 1 is a schematic view showing the configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the x-axis is set in the direction of the normal to the exposure surface (transfer surface) of the wafer w (which is a photosensitive substrate), and the X-axis is in the exposure table of the wafer W. Parallel to the plane of the plane of the object i, the gamma axis is the direction perpendicular to the plane of the plane i in the exposed surface of the wafer W. Referring to Fig. 1, the exposure apparatus of this embodiment has two illumination systems ILa and ILb which are arranged in a space in the X direction. Since the first illumination system ILa and the second illumination system ILb arranged in parallel have the same configuration, the description of the T-plane will focus on the first illumination system ILa when the configuration and actuation of each illumination system are performed. The 7G symbol corresponding to the second illumination system and the component symbols of its constituent devices will be placed in parentheses 25 201027120. The first illumination system ILa (second illumination system ILb) has a first optical system 2a (2b), a fly-eye lens (or micro fly's eye lens) 3a (3b), and a second optical system 4a (4b). The light source la (lb) for supplying light for exposure (irradiation light) to the first illumination system ILa (second illumination system ILb) is an ArF excimer laser light source which supplies light having a wavelength of about 193 nm. The first illumination system ILa and the second illumination system iLb can also use a common light source. A nearly parallel beam emerging from the source la(ib) will travel through the first optical system 2a (2b) to enter the fly-eye lens 3a (3b). For example, the first optical system 2a (2b) has a well-known configuration of a beam transmitting system (not shown), a polarization state changing section (not shown), and the like. The function of the beam transmitting system is to direct the incident beam to the polarization state changing section while converting the incident beam into a beam having an appropriate size and shape profile, and having an active correction incident to the polarization state changing section Function of Position Change and Angle Change of Beam 0 The function of the polarization state change section is to change the polarization state of the illumination light incident on the fly-eye lens 3a Q (3b). Specifically, the polarization state changing section converts linearly polarized light incident from the beam transmitting system into linearly polarized light having different vibration directions, or converts linearly polarized light incident thereon into unpolarized light. Or directly emit the linearly polarized light without making a transition. Then, a beam whose polarization state has been changed by the polarization state changing section as required is incident on the fly-eye lens 3a (3b). The beam entering the fly-eye lens 3a (3b) is two-dimensionally divided by a plurality of microlens 26 201027120 pieces, and a plurality of small illuminators are formed on individual rear focusing planes of the microlens devices incident on the emitter. In this manner, a surface illuminator composed of a large number of small hair t bodies is formed on the rear focusing plane of the fly-eye lens 3a (3b). The beam from the fly-eye lens "(3b) is guided to the first mask Ma (second mask Mb) via the second optical system 4a (4b). For example, the second optical system, system 4a (4b) It has a concentrator optical system (not shown) with a well-known configuration, a reticle matte © MBa (MBb), an imaging optical system (not shown), etc. In this case a beam from the fly-eye lens 3a (3b) travels through the concentrator optical system for illuminating a reticle matte (MBb) as stacked thereon. According to the formation of the fly-eye lens 3a (3b) A rectangular shaped illumination field of the shape of each of the microlens devices is formed on the mask mask as the field illumination block. The beam passing through the rectangular aperture (light transmitting portion) of the mask mask MBa (MBb) travels through the An imaging optical system for illuminating a first reticle (second reticle (10)) superimposed thereon. A beam transmitted by the first reticle Ma and transmitted by the second reticle Mb* The beam will travel through the double-head projection optical system pL for forming on the wafer (photosensitive substrate) W Forming the pattern image of the first mask blue & and the pattern image of the second mask Mb. The first mask platform and the second mask platform MSb respectively hold the first mask Ma and the second light The masks Mb, such that a pattern surface thereof extends along the χγ plane (horizontal plane). Specifically, the masks and milk are respectively held by the individual mask platforms MSa and MSb by the top suction against gravity. The reticle 27 201027120 platforms MSa and MSb are connected to a reticle stage drive system msd. The reticle stage drive system MSD drives the reticle in the X direction, the gamma direction and the direction of rotation about the z direction. Platform MSa * MSb. The present invention is not limited to the reticle stage for holding the reticle by the tip suction as the reticle stage MSa and MSb, and the reticle stage for holding the reticle from the bottom can also be used. Above the wafer platform ws, the exposed surface extends along the XY plane. The wafer platform boundary 3 is connected to a wafer platform drive system WSD. The wafer platform drive system WSD will be in the X direction, γ square Direction, Z direction, and rotation around the z direction The wafer platform WS is driven in. The projection optical system PL is an optical system having two effective fields and an effective image area separated from each other in the x-direction. The internal configuration of the projection optical system PL will be described later. In this embodiment, the first illumination system ILa forms a rectangular illumination area IRa elongated in the Y direction on the first mask Ma, as shown on the left side of FIG. 2. The second illumination system ILb will be in the first A mask Mb is formed on the rectangular illumination area IRb elongated in the Y direction, as shown on the right side of Fig. 2. For example, the first illumination area IRa and the second illumination area IRb are respectively centered on the Above the optical axis AXa of the first illumination system ILa and on the optical axis AXb of the second illumination system ILb. In other words, in the pattern area PAa of the first mask Ma, a pattern corresponding to the first irradiation area IRa is irradiated by the first illumination system ILa under predetermined illumination conditions. Among the pattern areas PAb of the second mask Mb (which will be separated from the first mask Ma in the X direction), a pattern corresponding to the second illumination zone IRb of the 28th 201027120 will be under preset illumination conditions. It is irradiated by the second irradiation system ILb. In this manner, as shown in FIG. 3, the pattern image of the first mask Ma irradiated by the first illumination region IRa is formed in the γ direction elongated in the effective image region ER of the projection optical system PL. a rectangular first region (first effective image region) ERa; and a pattern image of the second mask Mb illuminated by the second illumination region IRb is formed in a second region (second effective image region) ERb The second zone has a rectangular profile that is likewise elongated in the gamma direction and is positioned parallel to the first ❹-region ERa of the effective image zone ERf. In this embodiment, when the first mask Ma, the second mask Mb, and the wafer W are synchronously moved relative to the projection optical system pL along the X direction, the illumination area on the wafer W is Will be subjected to scanning exposure, the pattern of the first mask Ma and the pattern of the second mask will overlap to form a composite pattern. The overlay scanning exposure in front of the composite image will be relative to the When the projection optical system PL moves the wafer w in two dimensions, it is repeatedly performed, so that the pattern of the first mask Ma and the second mask are continuously formed in each of the irradiation regions on the wafer W. A composite pattern of Mb's drawings. Figure 4 shows the positional relationship between the reference optical axis and the rectangular static exposure regions formed on the wafer of the present embodiment. In this embodiment, as shown in FIG. 4, a first static exposure area (corresponding to the first effective image area) ERa having a rectangular shape of a predetermined size is set at the reference optical axis AX at +X. A direction separating the offset distance l〇i in the direction, and a second static exposure area having a rectangular shape of a preset size (corresponding to the second 29 201027120 effective image area) ERb is set up and the reference optical axis Αχwhere the offset distance L02 is separated in the _ direction, they are all in a circular shape centered on the reference optical axis 一致 (corresponding to the optical axis Αχ7 on the wafer w) and having a radius Β (image) Circle) in a certain area of the IF. The first static exposure area ERa and the second static exposure area ERb are symmetrical about an axis passing through the reference optical axis AX and parallel to the γ axis.

The lengths of the static exposure areas ERa and ERb in the X direction are mountains and mountains (=LXa) and the lengths in the γ direction are LYa and LYb (=LYa). Therefore, as shown in FIG. 2, a rectangular first illumination area (which corresponds to the first effective field area) iRa having a size and shape according to the first static exposure area ERa is formed on the first mask Ma. The optical axis of the first imaging optical system (which corresponds to the rectangular first static exposure area ERa) is spaced apart in the +χ direction by a distance corresponding to the distance of the offset distance L01. Similarly, a rectangular second illumination region (which corresponds to the second effective field region) IRb having a size and shape according to the second static exposure region ERb is formed on the second mask Mb and the fourth imaging The optical axis AX4 of the optical system (which corresponds to the rectangular second static exposure region ERb) is spaced at a position corresponding to the distance of the offset distance L02 (=L01) in the -X direction. Fig. 5 is a schematic view showing the arrangement between a boundary lens and a wafer in the present embodiment. Referring to Fig. 5, the projection optical system PL of the present embodiment is configured such that the optical path between the boundary lens Lb and the wafer W is filled with the liquid Lm. In the present embodiment, the liquid is pure water (deionized water) which can be easily obtained in large quantities in a semiconductor manufacturing facility and other facilities. However, it is also possible to use the following water as the liquid Lm : H+, 30 201027120

Cs+, κ+, cr, SO, or P〇42-, isopropanol, glycerol, hexane, heptane, smoldering, or the like. In an exposure apparatus of a step-and-scan method of performing scanning exposure with respect to the projection optical system PL to move the wafer w, the liquid [melon may continue to fill the boundary of the projection optical system pL from the start to the end of the scanning exposure The inside of the optical path between the lens Lb and the wafer W, for example, by using the technique disclosed in International Patent Publication No. 99/495, 4, Patent Application Laid-Open No. 10-3- The technique disclosed in 3114, or a similar technique. In the technique disclosed in the international patent publication WO99/49504, the liquid at the preset temperature is supplied via the supply hose and the discharge nozzle from the liquid supply member to fill the boundary lens Lb and the wafer. The optical path between the W and the liquid is retracted from the wafer W by a liquid collection element via the collection hose and the inflow nozzle. In the present embodiment, the liquid is recirculated in the optical path between the boundary lens Lb and the wafer W using a supply/discharge mechanism. When the liquid Lm as the immersion liquid is refluxed at a small flow rate in this manner, the liquid can be prevented from deteriorating, preventing mold, and the like by the antiseptic action. It is also possible to prevent aberration variation due to absorption of heat of light for exposure. Other applicable techniques for maintaining the liquid in the optical path between the projection optical system and the photosensitive substrate as described above include techniques for partially filling the optical path with the liquid, and such techniques include: A technique for moving a platform for holding a substrate as an exposed object in a liquid bath as disclosed in Japanese Laid-Open Patent Publication No. Hei No. 6-124873, and the disclosure of the Japanese Patent Application No. 10-303114 A technique for forming a liquid tank of a predetermined depth on a platform and holding a substrate thereon on 31 201027120.每 In each of the examples of the embodiment, the projection optical system PL, as shown in FIG. 6, FIG. 8 and FIG. 1 below, includes: a first imaging optical system G1; a second imaging optical system G2; Three imaging optical system G3; fourth imaging optical system G4; fifth imaging optical system G5; sixth imaging optical system G6; seventh imaging optical system G7; reflective mirror FM having reflective surface R37 and reflective surface R67; The reflecting mirror M23 (third deflecting member) has a reflecting surface R23; and a plane reflecting mirror M56 (fourth deflecting member) having a reflecting surface R56. The first imaging optical system G1 is disposed in an optical path between the first conjugate point CP1 of the first reticle Ma*, the first common spot and a certain point on the first reticle Ma An optical conjugate is produced and the optical axis (the incident side optical axis of the first imaging optical system G1 is again 1:) intersects the first reticle Ma at this point. The second imaging optical system is disposed between the first

Among the optical paths between the total point CP1 and the second common point CP2, the second conjugate point is optically conjugate with the point on the first mask Ma and the optical axis is at the point The first mask Ma intersects. The third imaging optical system G3 is disposed in an optical path between the second conjugate point cp2 and the third conjugate point, the third conjugate point and the point on the first mask Ma An optical conjugation is produced and the optical axis intersects the first mask Ma at this point. The second reticle Mb and the fourth conjugate point and the fourth imaging optical system G4 are disposed in an optical path between the fourth conjugate point CP4, the 32nd Λ 201027120 is in the second reticle Mb A certain point on the upper side produces an optical total and the optical axis (the incident side optical axis Αχ4 of the fourth imaging optical system G4) intersects the first reticle Mb at this point. The fifth imaging optical system G5 is disposed in an optical path between the fourth conjugate point CP4 and the fifth conjugate point CP5, the fifth conjugate point and the second reticle Mb The point produces an optical conjugation and the optical axis intersects the second mask Mb at this point. The sixth imaging optical system G6 is disposed in an optical path between the fifth conjugate point cp5 and the sixth common point cp6 'the sixth conjugate point is located on the second reticle Mb © This point produces an optical conjugation and the optical axis intersects the second photomask 匕 at this point. The seventh imaging optical system G7 is disposed in an optical path between the wafer w and the third common spot CP3 and the sixth common spot CP6. The reflecting mirror FM is a path coupling member which is composed of: a first deflecting member disposed near the second common vehicle point CP3 and having the planar reflecting surface R37; and a sixth conjugate point disposed at the sixth conjugate point A second deflecting member adjacent to the CP6 and having the planar reflecting surface R67. The plane reflection surface M23 is disposed near the second conjugate point CP2 and the plane reflection surface M56 is disposed near the fifth conjugate point CP5. The β-first imaging optical system G1, the third imaging optical system 〇3, the fourth imaging optical system G4, the sixth imaging optical system G6, and the seventh imaging optical system G7 are all refractive systems. The second imaging optical system G2 and the fifth imaging optical system G5 are a catadioptric system (reflection/refraction optical system) including a concave reflecting mirror. a first optical unit composed of the first imaging optical system G1 to the second imaging optical system G3 and a second optical unit composed of the fourth forming 33 201027120 image optical system G4 to the sixth imaging optical system G6 The same configuration is arranged and arranged to be symmetrical to the optical axis AX7 of the seventh imaging optical system G7. Among the reflecting mirrors FM as path combining elements, a ridge line composed of the reflecting surface R37 and the reflecting surface R67 (more precisely, a virtual extension line of the reflecting surface R3 7 and a virtual extending line of the reflecting surface R67) The ridge line) is located between the exit side optical axis AX3 of the third imaging optical system G3, the exit side optical axis Αχ6 of the sixth imaging optical system G6, and the incident side optical axis ΑΧ7 of the seventh imaging optical system G7. Intersection ©. The projection optical system PL is telecentric on both the object side and the image side. Among each of the exemplary projection optical systems PL, light traveling from the first mask Ma in the +Ζ direction travels through the first imaging optical system G1 to form a first intermediate image. Light from the first intermediate image travels through the second imaging optical system G2 for forming a second intermediate image near the reflective surface R23 of the planar reflecting mirror M23. Light from the second intermediate image or light forming the second intermediate image is deflected by the reflective surface R23 in the +X direction and then travels through the third imaging optical aperture system G3 for use in the reflective mirror fm A third intermediate image is formed near the reflective surface R3 7 . Similarly, light traveling from the second mask Mb along the -Z direction will travel through the fourth imaging optical system G4 to form a fourth intermediate image. Light from the fourth intermediate image will travel through the first The fifth imaging optical system G5' is for forming a fifth intermediate image near the reflective surface R56 of the planar reflecting mirror M56. The light from the fifth intermediate image or the light forming the intermediate image of the 34th 201027120 is deflected toward the _reverse direction by the reflective surface R56 to form a sixth intermediate image near the reflective surface r67 of the reflecting mirror FM. The light from the third intermediate image or the light forming the third intermediate image is deflected by the reflective surface R37 of the reflecting mirror FM in the _z direction and then travels through the seventh imaging optical system G7 for Above the wafer %; ^ into the final first small image. The pupil from the sixth intermediate image is that the light forming the sixth intermediate image is deflected by the reflective surface R67 of the reflecting mirror FM in the -Z direction and then travels through the seventh imaging optical© system G7 for A final second small image is formed at a position parallel to the first small image above the wafer W. In each of the examples of the embodiment, an aspherical surface is represented by the following formula (a), wherein y is a height in a direction perpendicular to the optical axis; z is the optical axis from the non-spherical The tangential plane at the tip of the spherical surface to the distance of the non-spherical surface at a position at height y; r is the radius of curvature at the tip; and Cn is the nth non-spherical number. In the following Tables (1), (2), and (3), each of the lens surfaces formed in the non-spherical shape will have a mark * on the right side of the surface number. z=( y2/r)/[l + {l-( l + /c ) . y2/r2} 1/2] + C4 · y4+C6 · y6+c8 . y8+C10y10+C12 . y12+C14 . Y14+c16 . y16+C18 . y18+C20 . y2 〇 (a) [First Example] FIG. 6 is a diagram showing a lens configuration of a projection optical system according to a first example of the embodiment. Referring to FIG. 6, in the projection optical system 35 201027120 of the first example, the first imaging optical system (1) is sequentially arranged from the incident side of the light in the optical axis extending in the z direction. Twelve lenses L11 to L112 are formed. The second imaging optical system is composed of a positive lens L21, two negative lenses L22 and L23, and a concave reflecting mirror CM2. They are sequentially arranged from the incident side of the light and fall on the optical axis AX1. Among the optical axes Αχ2 on the same straight line. The third imaging optical system G3 is composed of ten lenses L31 to L31 which are sequentially arranged from the incident side of the light in the optical axis 3 extending in the meandering direction. The fourth imaging optical system G4 'the fifth imaging optical system G5 and the sixth imaging optical system G6 have the same configurations as the first imaging optical system G1, the second imaging optical system G2, and the third imaging optical system (7), respectively. Therefore, the description of the configurations is omitted herein. The seventh imaging optical system G7 is constituted by fifteen lenses L71 to L715 which are sequentially arranged from the incident side of the light in the optical axis AX7 extending in the z direction. The plano-convex lens L715, which is arranged closest to the wafer among the seventh imaging optical system G7, constitutes a boundary lens Lb. In this first example, there is a paraxial pupil position inside the lens L712, and the aperture blocking AS is arranged at this near U-axis stop position. In the first example, the optical path between the boundary lens Lb and the wafer W is used for the use of ArF excimer laser light (wavelength λ = 193.306 nm) as the light used for exposure (light for exposure). Filled with pure water (Lm), its refractive index is 1.435876. » All light-transmitting parts (lenses) are made of alumina glass (Si〇2), which has a refractive index of 1.5603261 for the light used. 36 201027120 Table (1) below provides numerical values of the specifications of the projection light according to the first example. In the main specification of the watch paper length gauge (1), λ represents the center wavelength of the light for exposure, and the NA is the image side (wafer side) numerical aperture, Β Λ am L is like the radius of the image circle IF above the horse's day circle W (maximum image interval) LXa and LXb are the length of the static exposure area ERa, ERb in the χ direction (length of the long side), and LYa and LYb are static exposure Zone, ERb long 纟 in the Y direction (length of the short side).

In the specification of the optical component of Table (1), the surface number represents the number of the surface from the incident side of the light; r is the radius of curvature of each surface (in the case of the non-spherical surface, the tip is The radius of curvature at: mm); d is the axial distance or surface separation distance (mm) of the parent surface; and η is the refractive index of the center wavelength. Since the imaging optical systems G1 to G3 and the imaging optical systems G4 to G6 have the same configuration, the table (1) does not contain any description of the specifications of the optical components related to the imaging optical systems G4 to G6, and only in parentheses. The component symbols constituting the optical components of the imaging optical systems G4 to G6 are shown. The same symbols in Table (1) can also be applied to Tables (2) and (3) below. 37 201027120 Table (1) (Main specification) λ = 193.306nm β = 1/4 ΝΑ = 1.40 B = 15.3mm L01=L 02=3.8mm LX3=LXb = 26mni LYa=LYb=4mm (Specification of optical parts) Surface No. rd η Optical component (mask surface) 143.0457 1* -2149.56686 37.1696 1.5603261 Lll ( L41) 2 -353.06239 90.4783 3 -242.13440 31.5726 1.5603261 L12 ( L42) 4 -189.60199 38.7034 5 349.23635 70.5353 1.5603261 L13 ( L43 ) 6 -625.88405 13.8602 7 186.71555 30.8278 1.5603261 L14 ( L44) 8 263.87455 53.2551 9 87.62478 28.7960 1.5603261 L15 ( L45 ) 10 88.73819 56.9253 11 -243.47842 9.0000 1.5603261 L16 ( L46 )

38 201027120 12 233.40002 18.0896 13 257.66874 42.3077 1.5603261 L17 ( L47) 14 -110.87886 4.7153 15 -103.85652 10.5712 1.5603261 L18 ( L48 ) 16 446.35518 32.5621 17* -291.92989 67.8050 1.5603261 L19 ( L49 ) 18 908.08203 1.0000 19 1185.15814 58.2193 1.5603261 L110 ( L410 ) 20 -166.95773 1.0000 21 726.06659 41.7689 1.5603261 Llll ( L411 ) 22 -267.26042 1.0000 23 125.76600 25.0172 1.5603261 L112 ( L412 ) 24* 125.78727 100.0000 25 〇〇 25.0000 Virtual surface 26 oo 44.5922 Virtual surface 27 143.24159 69.9979 1.5603261 L21 ( L51 ) 28 439.36418 124.4664 29 -118.61450 45.1287 1.5603261 L22 ( L52) 30 2386.01920 90.2866 31 -97.15320 18.0000 1.5603261 L23 ( L53 ) 32 -221.08990 30.5668 33 -177.50172 -30.5668 CM2 (CM5 ) 34 -221.08990 -18.0000 1.5603261 L23 ( L53 ) 35 -97.15320 -90.2866 39 201027120 36 2386.01920 -45.1287 1.5603261 L22 ( L52 ) 37 -118.61450 -124.4664 38 439.36418 -69.9979 1.5603261 L21 ( L51 ) 39 143.24159 -44.5922 40 〇〇-25.0000 Virtual Surface 41 oo -206.7836 R23 ( R56 ) 42 -507.99489 -37.3768 1.5603261 L31 ( L61 ) 43 5329.19532 -1.0000 44 -597.00952 -32.1771 1.5603261 L32 ( L62 ) 45 1912.09613 -1.0000 46 -547.26791 -46.0467 1.5603261 L33 ( L63 ) 47 -1355.78569 -216.9752 48 204.62751 -9.0389 1.5603261 L34 ( L64) 49 347.59776 -1 1.6879 50 -176.51690 -76.0000 1.5603261 L35 ( L65 ) 51* 910.10858 -74.9718 52 204.45425 -70.4619 1.5603261 L36 ( L66 ) 53 -226.72267 -4.9657 54 -258.53441 -69.1045 1.5603261 L37 ( L67) 55 206.04691 -1 1.323 1 56* 266.69085 -11.0620 1.5603261 L38 ( L68 ) 57 221.04482 -69.0824 58 187.97072 -75.9659 1.5603261 L39 ( L69 ) 59 177.05435 -165.2252 40 201027120 60 -1672.1 1676 -26.8619 1.5603261 L310 ( L610 61 389.25812 -141.4648 62 〇〇-133.5452 R37 ( R67) 63 154.04263 -76.0000 1.5603261 L71 64 202.32468 -1.0000 65 -288.24709 -71.1250 1.5603261 L72 66 866.33777 -1.0000 67 -212.16962 -76.0000 1.5603261 L73 68 -441.3 1305 -27.7610 69 377.72976 -14.47 86 1.5603261 L74 70 -153.07755 -48.4848 71 388.10415 -9.0000 1.5603261 L75 72* -328.65439 -16.4728 73* -3157.16360 -31.4791 1.5603261 L76 74 1 168.79047 -1.0028 75 307.09987 -34.3832 1.5603261 L77 76* -3039.32892 -22.0967 77* 20000.00000 -34.9706 1.5603261 L78 78 719.88566 -1.0000 79 -1975.23270 -20.0000 1.5603261 L79 80* -2627.98276 -34.1067 81* -1484.97943 -44.1409 1.5603261 L710 82 437.80132 -1.0000 83 720.35508 -70.1444 1.5603261 L71 1 41 201027120 84 262.83672 -1.0000 85 -378.44582 -66.0777 1.5603261 L712 86 7570.00418 18.0000 87 〇〇-19.0000 AS 88 -195.50431 -85.8176 1.5603261 L713 89* -438.12570 -1.0000 90 -141.38428 -50.2383 1.5603261 L714 91* -513.84557 -1.0000 92 -65.65717 -49.9000 1.5603261 L715 : Lb 93 〇〇-3.0000 1.435876 Lm (wafer surface)

42 201027120

(non-spherical data) First surface: /c =0 C4 = -2.5623 1x10'8 Ce — -3.26656xl013 C8 = -4.46044x10'18 C 10 = = -4.40570xl0_22 Ci2=-1.99219xl〇·27 c 1 4 == 3.07186xl0·31 C16=-2.10176x10·35 C 1 8 ==〇c2〇=o 17th surface: /c =0 C4 = -1.34746x10·8 C6 = -3.27663xl0'12 C8 = 2.72885x10 -16 c 1 0 = -1.38898x10-19 Ci2=6.74393xl〇·23 C 1 4: = -1.94285xl0'26 Ci6 = 3.35553xlO'30 C 1 8: = -3.17768xl〇·34 C2〇=1.27392x10 '38 24th surface · /c =0 C4 = 2.1563 1x10-8 C6 = 1.03082xl〇·12 C8=4.52407x10'17 c 10 = = 1.29797xl〇·20 Ci2=-2.30704xl0'24 C14 =4.50350x10- 28 Ci6 = -3.95702xl0'32 C20=4.91635x1〇·43 c 1 8 = 1.7801 8x10-36 43 201027120 51st surface: /c =0 C4 = -4.02649xl〇·8 c6= 6.71563xl0*13 C8 = 7.63744 X1〇·18 c 1 0 = -1.21852xl〇·21 C12=5.22291x10*25 C14 = -5.66419xl〇·29 C16 = 1.48887x10'33 c 1 8 =〇c2〇=o 56th surface: /c = 0 C4 = 3.05352x10-8 C6 = 1.12471x10-12 C8 = 3.985 1 3x10'17 Cl〇= :1.55839x10-21 Ci2=1.30946xl0'25 CU = -1.2357 6xl〇·29 C16 = 2.37280x10'33 C2〇= 5.75870x10'42 C 1 8 = -1.56198xl0'37 72nd surface: /c =0 C4=-4.02946x10'8 c6= = 3.02819xl〇·12 C8 =2.26081x10·17 C10 = -4.63620xl0'21 C12 = -4.32269x10'25 Cj 4=9.42498x1〇·29 Ci6 = -7.12873x1〇·33 . 20 = 〇C, 8=1.93988x1〇·37 73rd surface: /c =0 C4=-2.35665xl〇·8 c6= :5.84076xl (T13 C8 = -4.59258x10-18 Cio = -7.00541xl〇·21 C12=1.58454xl〇·24 C14 = -2.57008xl0'28

44 201027120

C16=2.61943x10·32 c 1 8 = -1.58255X10'36 C2〇=3.91398x10'41 76th surface · /c =0 C4 = -4.57219xl〇·10 C6 = -4.37379xl0'13 C8 = -5.22320x10_17 c 1 0 =4.42637xl0'22 Ci2=1.328 14xl〇·25 C14 = -4.37632x10-30 C16 = -1.67489x10-35 c 1 8- :1·49135χ10-39 c2〇=o 77th surface · /c = 0 C4 = 3.89354xl0-9 C6=- .75637xl〇·13 C8 = -6.60208xl〇·17 c 1 0: = -1.64576xl0'22 C12=1.38560x10'25 C 1 4: = -2.25476xlO'30 C16 = -7.93455x1〇·35 C 1 8 = 1.83564xl〇·39 . 20 = 〇 80th surface: /c =0 C4=-ll〇257xl〇·8 C6 = -2.49708x10'14 C8 = -2.18114x1〇·17 c 1 〇= = -9.63217xl〇·23 Ci2=6.03363x10 '26 Ci4 = - 2.27688xlO'30 C16=3.64117x1〇·35 c 1 8 =- 2.15444xl〇·40 . 2〇 = 〇 45 201027120 81st surface: /c =0 C4=2.43343xl〇·8 C8 = -2.3041 lxlO'19 C12=1.〇7584x10*26 C16 = 9.71876x1〇·36 . 20 = 〇 89th surface: /c =0 C4 = 3.76281x10'8 C8=l.92084x10-16 C12 = 2.81981x10_25 C16=2.66740x10-35 91st surface: /c =0 C4 = -8_65513xlO-9 C8 = -1.72066xl〇·16 C12 = -9.72308xl(T24 C16=-1.88783x10'32 C6=-1.74414x1〇·13 Ci〇=-1.14245x10'22 C14=-4.57737xl〇·31 Ci8 = -1.26377xl〇 · 40 C6 = -2.28156x10'12 C10=-9.89908xl〇·21 Ci4=-4.25238xlO'30 C i 8 = 〇.20 = 〇C6 = -4.3 1357xl〇·12 Ci〇= 7.12083xl〇·20 C14 =6_27371xl0-28 C 1 8 = 〇C 2〇—〇 (corresponding to the value of the conditional expression) D 1 =D2 = 1 028.2mm D3=D4= 1 008.2mm β 3=yS 6=1.19 β 23= β 56 =1.16

46 201027120 D13=D24=1358.6mm S=450mm L01=L02=3.8mm B = 1 5.3 mm A1=A2 = 63.55° (assuming minimum light) Α3=Α4 = 26·35 (assuming minimum light) A1 =A2 = 46.44. (assuming maximum ray) A3=A4=46.00° (assuming maximum ray) ❹(1) LOl/B = 0.248 (2) LO2/B=0.248 (7) ( A1+A3) =89.91 (assuming minimum Value of light) (8) (A2+A4) =89.91 (assuming minimum ray) (7) (A1+A3) =92.44 (assuming maximum ray) (8) ( A2+A4 ) =92.44 (hypothesis Maximum light) (12) D13/S = 3.019 (13) D24/S = 3.019 Q ----- Figure 7 shows the lateral aberration relationship in the first example. In the aberration diagram, Y represents the image height. The same reference numerals in Fig. 7 can also be applied to Figs. 9 and 11 below. It can be understood from the aberration diagram of Fig. 7 that the projection optical system of the first example has been properly corrected for the aberration of the excimer laser light having a wavelength of 193.306 nm, and that a very large image side is ensured. The numerical aperture (NA = 1 _40) and the large static exposure area ER (26mm X 15.6mm) (which includes the static exposure area pair ERa, ERb 47 201027120 (26mm x 4mm)). [Second Example] Fig. 8 is a view showing a lens configuration of a projection optical system according to a second example of the embodiment. Referring to FIG. 8, in the projection optical system PL of the second example, the first imaging optical system G1 is sequentially arranged from the incident side of the light in twelve of the optical axes extending in the Z direction. The lenses L11 to L112 are formed. The second imaging optical system G2 is made up of a positive

The lens L21, the two negative lenses L22 and L23, and a concave reflecting mirror CM2 are sequentially arranged from the incident side of the light in the optical axis AX2 which falls on the same straight line as the optical axis AX1. The third imaging optical system G 3 is composed of ten lenses L31 to L310 which are sequentially arranged from the incident side of the light in the optical axis AX3 extending in the X direction. The fourth imaging optical system G4, the fifth imaging optical system G5, and the sixth imaging optical system G6 have the same as the first imaging optical system G1, the second imaging optical system G2, and the third imaging optical system G3, respectively.

The configuration, so this article omits the description of these configurations. The seventh imaging optical system G7 is composed of light which is sequentially arranged in the z direction from the incident side of the light. The plano-convex lens at the seventh round circle 'in the second example' and the fifteen lenses L71 to L715 among the aperture blocking axis AX7 are arranged in the optical system G7 closest to the crystal L715 to form a boundary lens Lb. As in the first example, the paraxial pupil position AS located inside the lens L712 is arranged at this paraxial pupil position. For the ArF excimer as in the first example, in this second example 48 201027120 laser light (wavelength = 193.30 6 nm) as the light used, the optical path between the boundary lens Lb and the wafer W It will be filled with pure water (Lm) and has a refractive index of 1.435876. All of the light transmissive members are made of alumina glass, which has a refractive index of 1,560,261,1 for the light used. Table (2) below provides numerical values of the specifications of the projection optical system PL according to this second example. Table (2) ❹ ❹ (main specification) λ = 1 93.306nm β = 1/4 ΝΑ = 1.3 5 B = 15.3mm LO1 = L 02 = 2.8 mm LXa = LXb = 26mm LYa = LYb = 5mm (Specifications of optical parts Surface number

R d η Optical component (mask surface) -586.07580 -230.61494 242.18447 -21 1.26515 68.06061 20.20434 1.5603261 LI 1 ( L41 ) 107.59457 74.47034 23.77336 1.5603261 L12 ( L42) 49 201027120 5 207.49610 61.57929 1.5603261 L13 ( L43 ) 6 -8412.54586 2.54546 7 299.13005 17.89026 1.5603261 L14 ( L44) 8 397.83466 2.90753 9 131.08330 36.41651 1.5603261 LI 5 ( L45) 10 203.23998 78.67572 11 -233.01106 9.16442 1.5603261 L16 ( L46 ) 12 173.12941 21.66873 13 -217.24440 25.03962 1.5603261 L17 ( L47 ) 14 -103.58397 10.27527 15 -156.73082 12.19868 1.5603261 L18 ( L48) 16 -451.14666 29.47704 17* -209.61 197 58.53488 1.5603261 L19 ( L49) 18 -657.02163 1.00000 19 -1084.50282 76.00000 1.5603261 LI 10( L410) 20 -151.07953 1.00000 21 414.09389 60.69805 1.5603261 Llll( L411) 22 -549.86813 1.00000 23 487.71 156 25.00000 1.5603261 LI 12( L412 ) 24* 947.46317 100.00000 25 〇〇 25.00000 Virtual surface 26 oo 1.00000 Virtual surface 27 160.46928 69.97494 1.5603261 L21 ( L51) 28 84 3.99607 137.58178 50 201027120 29 -111.60543 9.00000 1.5603261 L22 ( L52 ) 30 19124.96743 73.67050 31 -98.17593 18.00000 1.5603261 L23 ( L53 ) 32 -209.71239 26.10584 33 -154.71296 -26.10584 CM2 ( CM5 ) 34 -209.71239 -18.00000 1.5603261 L23 ( L53 ) 35 - 98.17593 -73.67050 36 19124.96743 -9.00000 1.5603261 L22 ( L52) 37 -111.60543 -137.58178 38 843.99607 -69.97494 1.5603261 L21 ( L51 ) 39 160.46928 -1.00000 40 〇〇 -25.00000 Virtual surface 41 oo -189.39944 R23 ( R56 ) 42 -532.971 1 1 -40.22107 1.5603261 L31 ( L61 ) 43 622.49059 -1.00000 44 -421.23764 -24.40755 1.5603261 L32 ( L62 ) 45 -1272.87198 -1.00000 46 -229.48600 -19.17842 1.5603261 L33 ( L63 ) 47 -269.28627 -122.85175 48 -645.80191 -74.21251 1.5603261 L34 ( L64 49 635.78890 -37.24572 50 -150.61476 -25.64829 1.5603261 L35 ( L65) 51 -443.47226 -24.30180 52 195.09674 -46.88195 1.5603261 L36 ( L66 ) 51 201027120 53 -162.86268 -13.63274 54 -370.5091 1 -32.47484 1.5603261 L37 ( L67 ) 55 25 1.3385 5 -103.13304 56* 575.89090 -54.22594 1.5603261 L38 ( L68) 57 193.02587 -89.82690 58 362.81083 -47.94952 1.5603261 L39 ( L69 ) 59 209.74590 -18.32614 60 1220.18658 -76.00000 1.5603261 L310 ( L610 ) 61 323.72836 -128.59060 62 〇〇-66.50000 R37 ( R67) 63 144.32133 -52.63909 1.5603261 L71 64 171.85869 -1.00000 65 -284.71313 -41.71221 1.5603261 L72 66 624.37054 -1.00000 67 -165.85811 -56.22944 1.5603261 L73 68 -317.65007 -14.10507 69 -43303.28155 -9.00000 1.5603261 L74 70 -120.72404 -58.60639 71 126.46159 - 9.00000 1.5603261 L75 72* -546.08105 -26.35345 73* 351.10634 -39.68597 1.5603261 L76 74 147.99829 -1.00000 75 -222.56532 -63.69401 1.5603261 L77 76* -3333.33333 -26.19524 52 201027120 77* 1483.54746 -64.78136 1.5603261 L78 78 204.53525 -1.00000 79 264.62152 -20.00000 1.5603261 L79 80* -3333.33333 -41.27541 81* 434.62199 -46.00882 1.5603261 L710 82 368.94779 -1.00000 83 -2097.98781 -70.30535 1.5603261 L711 84 514.62050 -14.00000 85 〇〇13.00000 AS 86 -304.02823 -57.71913 1.5603261 L712 87 -103596.14860 -1.00000 88 -190.85747 -69.41405 1.5603261 L713 89* -984.28103 -1.00000 90 -108.98885 -50.25913 1.5603261 L714 91* -306.74470 -1.00000 92 -67.43913 -49.90000 1.5603261 L715 : Lb 93 〇〇-3.00000 1.435876 Lm (wafer surface) 53 201027120 (non-spherical data) 17th surface: /c =0 C4 = -9.56145xl〇·9 C6 = -1.57185x1〇·12 C8 = -9.99870x1 〇·17 Ci〇=2.34259xl〇·21 C12 = -3.66502x1〇·24 C14=9.03279x10'28 Ci6 = -1.53772xl0'31 C20=-5.82675x1〇·40 C,8=1.39045x1〇·35 24 surface: /c =0 C4=1.41766xl〇·8 C6=4.92551x10'14 C8 = 2.52764x1(T18 C10 = -l.83214xl〇-22 C12=4.78600x10'26 C14=-6_45055xl0 —30 C16 = 5.33388 X1〇·34 C20=4.91 635x10-43 Ci8 = -2.46004xl〇·38 56th surface: /c =0 C4 = 2.91460x10'8 C6=2.96485x1〇·14 C8 = 7.80884x1〇·18 C10 = -1.82018 Xl0·21 Ci2 = 3.97048xl〇·25 Ci4 = -4.39778xl0'29 C16 = 3.15627x10'33 C2〇=2.30521x1〇·42 Ci8 = -1.26256x1〇·37

54 201027120

72nd surface: /c =0 C4 = -4.44233xl〇·8 C6=1.32427x1〇·12 C8 = -7.36896x1〇·17 Ci〇= -1.13507xl〇·20 C12 = 6.61590x10'25 Ci4=1.12866xl 〇·29 C16=1.92627x10'33. 20 = 〇Ci8 = -1.3523 1x1〇·37 73rd surface: /c =0 C4 = 2.98792xl〇·9 C6 = -1.22687x1〇·12 C8 = -1.10963x10_16 Ci〇=-2.74018xl〇·21 Ci2= -9.02362xl〇·25 Ci4=1.72989xl〇·28 Ci6 = -2.08935x1〇·32 C20=-3.561 65x1〇·41 C18=1.43649x1〇·36 76th surface: /c =0 C4=4.35491x10'9 C6 = -6.25 188x10'13 C8 = -5.73946x10'17 C10=1.01130xl〇·21 C12=1.32853x10'25 Ci4=-5.51909xl0'30 C16 = -1.25342x1〇·35 . 20 = 〇Ci8 = 2.66388xl〇·39 77th surface: /c =0 C4=1.24076xl〇·8 C6=4.27672x10 —13 55 201027120 C8 = -4.36725x10'17 Ci〇= 7.46514xl〇·22 C12= 1.62422x10'25 C14 = -3.46915xl〇·30 C16 = -2.18464x10'34 . 20 = 〇C18 = 6.58361x10'39 80th surface: /c =0 C4=-2.10612x10'8 C6 = -3.29044x10-13 C8 = -3.22807x10'17 C10=-1.19075xl0'22 C12 = 6.27225x10' 26 C14=-1.94725xl〇·30 C16=l.01737x10-34. 20 = 〇C18 = -2.40677x10·39 81st surface: /c =0 C4=1.34892xl〇·8 C6 = -4.453 18x1〇·13 C8 = -3.86230x10-18 Ci〇=-1.37972x10'22 C12 = 2.51819x1〇·27 Ci4=-3.41940xl0*31 C16 = 5.073 1 8x10'36 c2〇=o Ci8 = -3.10844x1〇·40 89th surface: /c =0 C4=2.55387x10'8 C6 = -2.57930x10 '12 C8 = 1.88405x1〇·16 Ci〇=-9.46669xl〇·21 C12=2.98973x10'25 Ci4=-5.39794xlO*30 Ci6=4.24360xl〇·35 C 1 8 = 0 C2〇= 〇

56 201027120 C6 = -l.72922x10-12 C10=6.76083xlO'20 C14=6.80986x10·28 Cig = 0 C2〇= 〇91st surface: /c =〇C4=-6.1 1181xl〇·1 C8=-3.43795x10 *16 Ci2 = -9.56074xl〇·24 Ci6 = -2.90856x1〇·32 (corresponding to the value of the conditional expression)

❹

Dl=D2 = 945.4mm D3=D4=925.2mm β 2,= β 6=1.21 /5 23=10,000 56=1.29 D13=D24=1 1 70.5 mm S=450mm L〇l=L02 = 2.8mm B= 15.3 Mm A1=A2=62.92. (assuming the minimum ray) Α3=Α4=26·95 ° (assuming the minimum ray) Α1=Α2 = 30.2Γ (assuming the maximum ray) Α3=Α4=63·79° (assuming the maximum ray) (1) LOl/B=0.183 (2) LO2/B = 0.183 (7) (A1+A3) =89.87 (assuming minimum light) 57 1 (A2+A4) =89.87 (assuming minimum light) 201027120 (7) ( A1+A3 ) =94.00 (assuming maximum light) (8 ) ( A2+A4 ) =94.00 (assuming maximum light) (12) D13/S = 2.601 (13) D24/S=2.601 Figure 9 is a diagram showing the lateral aberration relationship in the second example. It can be understood from the aberration diagram of Fig. 9 that the projection optical system of the second example has been properly corrected for the aberration of the excimer laser light having a wavelength of 193.306 nm, while ensuring that there is a very large image side. The numerical aperture (Na = i .35 ) ❹ and the large static exposure area ER (26mm X 1 5.6mm) (which includes the static cancer exposure area for ERa, ERb (26mm X 5mm)). [Third Example] Fig. 10 is a view showing a lens configuration of a projection optical system according to a third example of the embodiment. Referring to the drawing, in the projection optical system PL of the third example, the first imaging optical system G1 is sequentially arranged from the incident side of the light in the optical axis AX1 extending in the Z direction. Two 〇 lenses L11 to L112 are formed. The second imaging optical system is composed of two negative lenses L21 and L22 and a concave reflecting mirror CM2 which are sequentially arranged from the incident side of the light on the same straight line as the optical axis AX1. Among the axes AX2. The third imaging optical system G3 is composed of ten lenses L31 to L310 which are sequentially arranged from the incident side of the light in the optical power consumption AX3 extending in the X direction. The fourth imaging optical system G4, the fifth imaging optical system G5, and the 58201027120 sixth imaging optical system G6 have the same configuration as the first imaging optical system G1, the second imaging optical system G2, and the third imaging optical system, respectively. Therefore, the description of these configurations is omitted herein. The seventh imaging optical system G7 is constituted by fifteen lenses L71 to L715 which are sequentially arranged from the incident side of the light in the optical axis AX7 extending in the z direction. The plano-convex lens L715, which is arranged closest to the wafer among the seventh imaging optical system G7, constitutes a boundary lens Lb. As in the first and second examples, in the third example, there is a paraxial pupil position inside the lens L712, and the aperture barrier AS is arranged at this paraxial pupil position. As in the first example and the second example, in the third example, the ArF excimer laser light (wavelength = 193 3 〇 6 nm) is used as the light for use, between the boundary lens Lb and the wafer w The optical path between them is filled with pure water (Lm) and has a refractive index of 1,435,876. All of the light transmissive members are made of alumina glass, which has a refractive index of 1 56〇3261 for the light used. Table (3) below provides numerical values of the _ specification of the projection optical system pL according to the third example. ❹ 59 201027120

Table (3) (Main specifications) λ =1 93.306nm β = 1/4 ΝΑ = 1.35 Β = 1 5.3mm LO1 = L 02 = 2.8 mm LXa = LXb = 26mm LYa = LYb = 5mm (Specification of optical parts) Surface No. R d η Optical component (mask surface) 68.305417 1 -418.69974 20.258719 1.5603261 L11 ( L41) 2 -202.12761 109.082946 3 468.86576 43.995889 1.5603261 L12 ( L42) 4 -348.58396 1.000000 5 209.82001 35.388927 1.5603261 L13 ( L43 ) 6 1232.64488 1.000000 7 162.91710 10.738403 1.5603261 L14 ( L44) 8 150.00000 62.420165 9 93.89563 32.197906 1.5603261 L15 ( L45 ) 10 1 17.46797 22.824902 11 -228.68609 17.713937 1.5603261 L16 ( L46 ) 60 201027120 12 -3841.07700 17.473213 13 -114.86308 22.598485 1.5603261 L17 ( L47 ) 14 -90.85055 16.126395 15 -125.56482 9.540206 1.5603261 L18 ( L48) 16 -1287.20683 87.952880 17* -238.52458 60.748800 1.5603261 L19 ( L49) 18 -167.54100 1.000000 19 -726.14197 52.845620 1.5603261 L110 ( L410 ) 20 -202.08828 1.000000 21 263.85496 44.829956 1.5603261 Llll ( L411 ) 22 -9136 .04306 1.000000 23 234.92083 29.180498 1.5603261 L112 ( L412) 24* 614.69993 100.005766 25 〇〇182.541720 Virtual surface 26 -107.69408 9.018062 1.5603261 L21 ( L51) 27 -634.77519 56.779561 28 -1 13.16823 18.000000 1.5603261 L22 ( L52) 29 -227.30779 -18.000000 30 -163.37480 -33.135378 CM2 ( CM5 ) 31 -227.30779 -18.000000 1.5603261 L22 ( L52) 32 -1 13.16823 -56.779561 33 -634.77519 -9.018062 1.5603261 L21 ( L51 ) 34 -107.69408 -182.541720 35 oo -189.399444 R23 ( R56 ) 61 201027120 36 1564.92668 -50.368928 1.5603261 L31 ( L61 ) 37 268.3481 1 -1.000000 38 7918.52031 -28.473308 1.5603261 L32 ( L62 ) 39 654.73510 -1.000000 40 -1839.56946 -75.716228 1.5603261 L33 ( L63 ) 41 5979.23492 -99.700277 42 -258.08494 -64.572369 1.5603261 L34 ( L64 ) 43 -3134.42911 -140.416272 44 -152.03879 -28.036965 1.5603261 L35 ( L65) 45 -352.24679 -17.463095 46 631.39933 -48.280275 1.5603261 L36 ( L66 ) 47 -141.34789 -76.056277 48 -336.86614 -75.966104 1.5603261 L37 ( L67) 49 -3105.40731 -64.957316 50* 708.21028 -69.672733 1.5603261 L38 ( L68) 51 186.79128 -14.290084 52 233.61816 -75.970951 1.5603261 L39 ( L69 ) 53 190.41690 -5.441923 54 -8387.96593 -42.1 16370 1.5603261 L310 ( L610 ) 55 347.61300 -133.910143 56 Oo -66.500000 R37 ( R67) 57 148.38791 -75.986723 1.5603261 L71 58 183.99840 -1.000000 59 -266.62689 -36.724312 1.5603261 L72 62 201027120 60 554.52607 -1.000000 61 -151.23538 -33.481 157 1.5603261 L73 62 -451.26020 -12.591952 63 1318.56526 -9.000000 1.5603261 L74 64 -1 12.50842 -55.191096 65 127.08160 -9.1 10781 1.5603261 L75 66* -434.93767 -26.663812 67* 280.93202 -32.403526 1.5603261 L76 68 166.63855 -1.000000 69 -262.40251 -60.427027 1.5603261 L77 70* 1626.04270 -14.269217 71* 1261.43173 -65.194630 1.5603261 L78 72 195.66529 -1.000000 73 225.84163 -20.000000 1.5603261 L79 74* 1501.95254 -25.281741 75* 824.45668 -46.653403 1.5603261 L710 76 297.96105 -1.000000 77 634.46297 -58.228920 1 .5603261 L71 1 78 325.07548 -15.000000 79 〇〇14.000000 AS 80 -290.52967 -59.05091 1 1.5603261 L712 81 -8775.90458 -1.000000 82 -175.41392 -72.464453 1.5603261 L713 83* -688.48238 -1.000000 63 201027120 84 -113.94730 -48.105370 1.5603261 L714 85* -339.77086 -1.000000 86 -68.10513 -49.900000 1.5603261 L715 : Lb 87 oo -3.000000 1.435876 Lm (wafer surface) 64 201027120 (non-spherical data) 17th surface: /c =0 C4=-3.27118xl0'9 C6=- 1.48666x1013 C8 = -6.96468xl〇·18 Ci〇=-6.09245xl〇·22 CI2=1.21506x1〇·25 C14 = -1.32987x10_29 Ci6 = 7.1 832 1xl〇·34 C2〇= 5.10230x10'44 C18 = -1.76026 X1〇·38 ❿24th surface: /c =0 C4=1.29724x10'8 C6- “3.03557x10-14 C8 = 4.76645x10 —18 c10 = -7.92360x10-22 C12=1.35265x10'25 C14=-1.41637xl 〇·29 C16 = 9.07550x10'34 C! 8 = -3.23556xl〇·38 C20=4.91635x10-43 50th surface: /c =0 C4=4.92318xl〇·8 :8.09076xl0'13 C8 = 2.08842x10· 17 c 1 0 = -6.06320xl〇·22 C12=3.73303x10'25 C 14. = _4.5497〇xl〇-29 C16 =4.13592x10-33 C i 8: = -2.00047xl0'37 C20=4.59787xl〇·42 65 201027120 66th surface: /c =0 C4 = -2.77775x10'9 c6 = 3.20301xl0'12 C8 = -3.76509x10 '17 c, 〇=-8.37032xl〇·23 C12=-3.59102x10-24 C14=5.40058xl〇·28 C16 = -4.31608xl〇·32. 20 = 〇Ci 8=1.05721x10-36 67th surface: /c =0 C4 = 3.14482x10'8 C6= = 7.71867xl0-13 Cs = 6.40888xl〇·17 C,0 = 1.32070xl〇·20 C12 = - 4.36601x10-24 Cl 4=1.02285x10'27 Ci6 = -1.64993xl〇·31 C2〇= -6.16760x10'40 Cl 8=1.47404x1〇·35 70th surface: /c =0 C4=1.79654x10_8 C6= = -2.36256x10-13 C8 = -6.3 1736x10'17 Cl〇= =2.83381xl0'22 C12=1.37109x1〇·25 C 14 = -1.95959xlO_30 Ci6 = -2.30213x1〇·34 . 2〇 = 〇 c 18 = = 7.4961 lxlO'39 71st surface: /c =0 C4 = 2.06006xl〇·8 C6=1.05320x10'12

66 201027120

C8 = -5.87237x10'17 C10=7.52885xlO·22 C12=2.17202x10'25 C14 = -7.3 1267xl〇·30 C16 = -1.62507x10'34 . 20 = 〇Ci8 = 8.09985xl0'39 74th surface: /c =0 C4=-2.50949x10'8 C6=-1.87366x10·13 C8 = -2.37045x10'17 C10=1.36425xlO·22 C12 = 6.09018x10'26 C14=-6.84000x1〇·31 C16=-4.45663x10 —35 . 20 = 〇C18 = 8.01917x10-40 75th surface: /c =0 C4=2.00988xl〇·8 C6 = -5.00357x10'13 C8 = -6.69661x10'18 C10=-9.58868x10-24 C12 = 8.55 155x1〇 ·27 C14=-4.29504xl〇·31 Ci6 = 4.74566xl〇·36 c20=o C18 = 5.01717x1〇·41 83rd surface: /c =0 C4=2.53940xl〇·8 C6 = -2.51880x10'12 C8 = 1.81244x1〇·16 C10 = -9.24162xlO-21 C12=2.97860x10'25 C14=-5.47930xl〇·30 C16=4.35598x10 —35 C1 8 = 0 〇20 = 0 1 67 201027120 85th surface: /c =0 C4 = -6.70652x 1 0'8 c6= 5_15611xl0·13 C8 = -4.36833xl〇·16 C 10 == 6.73884xl〇-20 C12 = -8.1 1 358xl〇·24 C,4 = 5.16537xl0·28 Ci6 = -1.93567x10'32 c 18 = =0 C2〇=〇 (corresponding to the value of the conditional expression) Dl=D2 = 889.2mm D3 = D4 = 869.2mm β 3=β 6=1.38 β 23= β 56= 1.44 D13=D24=1302.8mm S=450mm L01=L02 = 2.8mm Β = 1 5.3mm Α1=Α2 = 64.31〇 (assuming minimum light) Α3=Α4=25·89° (assuming minimum light) Α1 =Α2 = 30.41° (assuming maximum light) Α3=Α4 = 69.50° (assuming maximum light) (1) LOl/B = 0.183 ( 2) LO2/B=0.183 (7) (A1+A3) =90.21 (assuming minimum light) (8) (A2 + A4) =90.21 (assuming minimum light) 68 201027120 (7) (A1+A3 ) =99.91 (assuming maximum ray) (8) ( A2+A4) =99_91 (assuming maximum ray) (12) D13/S = 2.895 (13) D24/S=2.895 Figure 11 shows the The lateral aberration relationship diagram in the third example. It can be understood from the aberration diagram of FIG. 11 that the projection optical system of the third example has been corrected for the aberration of the excimer laser light having a wavelength of 193.306 nm while ensuring a very large image. The side numerical aperture (ΝΑ=1·35) and the large static exposure area er (26mm X 15.6mm) (which includes the static exposure area pair ERa, ERb (26mm x 5mm)), as in the second example.投影 As described above, the projection optical system PL of this embodiment is configured to insert pure water (Lm) having a large refractive index in an optical path between the boundary lens Lb and the wafer W, thereby It is guaranteed to have a very large effective image area while ensuring a large effective image side numerical aperture. In each of the examples, specifically, the projection optical system ensures that the ArF excimer laser light having a center wavelength of 193.306 nm has a large image side numerical aperture 丨" or 丨.40 and is guaranteed to have the pair of rectangles. Static exposure area, ERb; for example, it can perform high-resolution double exposure of the circuit pattern in a rectangular exposure area of 26 mm 。 33 丽. In each of the above examples, the plane as the third deflection part The reflecting mirror is disposed between the second imaging optical system image optical system G3, and serves as a fourth reflecting mirror of the σ element. 69 201027120 ' M56 tc π I. The fifth imaging optical system And between the sixth imaging optical system G6. However, it is not limited thereto, and a modified example may be employed, in which a plane reflecting mirror M12 as a second deflecting member is disposed in the first-imaging optical system G1. And the second imaging optical system G2, and wherein a plane reflecting mirror m45 as a fourth deflecting member is disposed between the fourth imaging optical system G4 and the fifth imaging optical system, Corresponding to each of the examples. In this case, the reflective surface R12 (R45) of the plane reflecting mirror M12 (M45) can be arranged at the position of a virtual surface of the twenty-fifth surface in each of the examples. 12 is a modified example in which a plane reflecting mirror M12 is disposed between the first imaging optical system gi and the second imaging optical system G2, and wherein the plane reflecting mirror M45 is disposed at the first Between the four imaging optical system G4 and the fifth imaging optical system G5 'which corresponds to the third example. In each of the above examples, the reflective surface R37 and the reflective surface R67 are formed on the reflective mirror FM (which is a single Among the optical components, however, it is not limited thereto, and a first deflecting member having the reflecting surface R37 以及 and a second deflecting member having the reflecting surface R67 may be separately provided. In each of the above examples The ridge line formed by the reflecting surface R3 7 and the reflecting surface R6 7 of the reflecting mirror FM is the emitting side optical axis AX3 of the third imaging optical system G3, and the output of the sixth imaging optical system 〇6 An intersection between the optical axis AX6 and the incident-side optical axis AX7 of the seventh imaging optical system G7. However, it is not limited thereto, and the ridge line formed by the reverse surface 70, the surface of the surface R37 and the reflective surface R67 and the imaging The positional relationship between the optical axes AX3' AX6, AX7 of the optical systems G3, G6, G7 can take various forms. ❹ ❹ Inward movement In the foregoing embodiment, when the first mask Ma, the second mask When the Mb and the wafer w are synchronously moved relative to the projection optical system pl along the X direction, the illumination area on the wafer W is subjected to scanning exposure, and the pattern of the first mask Ma and the second The pattern of the mask Mb is superposed to form a composite pattern. However, it is not limited thereto, and the exposure apparatus may be configured as shown in FIG. 13, specifically, it is configured to repeatedly perform the necessary operations (n times) of the following operations: on the wafer w Scanning exposure operation is performed on the pattern of the mask Ma in an irradiation area Shi; scanning and exposing operation is performed on the pattern of the mask Mb in the second irradiation area Sh2, and the second irradiation area Sh2 is in the scanning moving direction (for example, , the +χ direction) is located beside the first illumination area S11; in the third illumination area sh3, the pattern of the mask Ma is scanned and exposed, and the third illumination area Sh3 is located in the scanning movement direction. The second irradiation area is located at the side 2; thus, by simply moving the wafer along the scanning direction (χ direction), it is possible to continuously perform scanning exposure in the n irradiation areas aligned to the scanning direction, such as the center of the heart. Without having to perform a two-dimensional step on the wafer W in this exposure sequence, the reticle of the illumination system (10) covers the hole of the mask: during the scanning exposure of the pattern of the mask 之中 in the first-irradiation area Shl close While mask _ A + _ σ MSb level of the lower one of the second irradiation region 2 in the scanning exposure start position at a moment will be on standby ready. Next, the aperture of the reticle mask MBa of the illumination system iLa 71 201027120 is closed during the scanning exposure of the pattern of the reticle Mb in the second illumination area sh2, and the reticle stage MSa is from the first illumination area Shi The end position of the scanning exposure is returned to the starting position of the scanning exposure in the next third irradiation area Sh3. Then, the aperture of the reticle mask MBb of the illumination system ILb is closed during the scanning exposure of the pattern of the reticle Ma in the third illumination area sh3, and the reticle stage Msb is scanned from the second illumination area Sh2. The end position of the exposure returns to the start position of the scanning exposure in the next fourth irradiation area sh4. In the foregoing embodiment, one of the illuminating regions on the photosensitive substrate is subjected to scanning exposure, and the first pattern and the second pattern are superposed to form a composite pattern. However, it is not limited thereto, and the first pattern may be subjected to scanning exposure or full-shot exposure and a second irradiation area on the photosensitive substrate in the first irradiation region on the photosensitive substrate. The second pattern is subjected to scanning exposure or full shooting exposure. In the foregoing embodiment, the rectangular first illumination area IRa and the second illumination area IRb are respectively formed centrally on the optical axis AXa of the first illumination system ILa and the optical axis AXb of the second illumination system ILb. However, the ❹ is not limited thereto, and the contours of the irradiation regions IRa and IRb, the positional relationship of the irradiation regions IRa and IRb with respect to the optical axes AXa and AXb, and the like may be various. For example, the illuminating optical system may be an illuminating optical system using the technique disclosed in the following patent publications: U.S. Patent Application Publication No. 2007/0258077, U.S. Patent Application Publication No. 2008/0246932, Patent Publication No. 2009/0086186 72 to 201027120, U.S. Patent Application Serial No. 2009/0040490, and U.S. Patent Application No. 2009/0135396. The so-called polarization irradiation method disclosed in U.S. Patent Application Publication No. 2006/0170901 and U.S. Patent Application Publication No. 2007/0146676 can also be applied. The foregoing embodiment uses an ArF excimer laser source. However, it is not limited thereto. For example, other suitable light sources such as a KrF excimer laser source or a & laser source may be used. The foregoing embodiment is an application of the embodiment of the present invention to a liquid immersion type projection optical system disposed in an exposure apparatus, but it is not limited thereto, and the embodiment of the present invention may be applied to any other general liquid. Immersion projection optical system. The foregoing embodiment applies the embodiment of the present invention to a liquid immersion type projection optical system disposed in an exposure apparatus, but it is not limited thereto, and the embodiment of the present invention can be applied to the image side. A dry projection optical system that forms any liquid immersion zone. In the above-described embodiment, each of the masks can be replaced by a variable pattern component, and the alpha-wave pattern component constitutes a predetermined pattern based on the preset electronic material. When the surface of the pattern is arranged vertically, using this variation pattern to form components minimizes the impact on synchronization accuracy. For example, the variation pattern constituting component to which this document may be applied may be a spatial light modulator' which contains a plurality of reflective devices that are driven based on a predetermined electronic material. For example, an exposure apparatus having the spatial light modulator is disclosed in Japanese Patent Application Laid-Open No. 2004-304135, International Patent Publication No. WO2006/080285, and the corresponding US Patent Application Publication No. 2007/0296936 number. In addition to the reflective spatial light modulators of the type described above, the transmissive spatial light modulator or the self-illuminating type image display component can also be used. It should be noted that $ is that the variation pattern constituent element can also be applied to the case where the surface of the pattern is horizontally arranged. The exposure apparatus of the previous embodiment is made by assembling various subsystems containing their individual components as set forth in the scope of the patent application of the present application in order to maintain preset mechanical precision, electrical Accuracy and optical accuracy. In order to ensure that these various accuracies are achieved, the following (4) adjustments to achieve the optical accuracy of the I optical system are performed before and after assembly; adjustments are made to achieve the mechanical precision of various mechanical systems. Adjustments made to the electrical accuracy of various electrical systems. The assembly steps from the various subsystems to the exposure apparatus include mechanical connections between the various subsystems, line connections between the electrical circuits, pneumatic connections between the pneumatic circuits, and the like. It is a matter of course that there will be assembly steps for the individual subsystems prior to the assembly steps from each of the seed systems to the exposure apparatus. After the assembly steps from the various subsystems to the exposure apparatus are completed, an overall adjustment must be made to ensure various accuracy of the entire exposure apparatus. The manufacture of the exposure apparatus is desired to be carried out in a clean room controlled by temperature, cleanliness, etc. The exposure apparatus of the embodiment described above can implement an illumination mask (main mask) process (illumination step) by the illumination elements and expose the photosensitive substrate by the projection optical system. A transfer pattern (exposure step) is formed over the cover for manufacturing micro-elements (for example, semiconductor elements, imaging elements, liquid crystal display elements, thin film magnetic heads, etc.). 74 201027120 An example of a method of forming a predetermined circuit pattern on a wafer or the like (such as a photosensitive substrate) to fabricate a semi-conducting vessel element into a micro component by the exposure apparatus of the above embodiment will be described. Flow chart of 14. The first step S40 in Fig. 14 is to deposit a metal film on each of a plurality of wafers. The next step S42 is to apply a photoresist over the metal film on each of the wafers. Subsequent step S44 is to use the exposure apparatus of the above embodiment to sequentially transfer the image of the pattern on the mask to the individual illumination on each of the wafers in the batch via the projection optical system of the exposure apparatus. region. Subsequent step S46 is to perform development on the photoresist on each of the wafers, and the next step S48 is to perform etching using the photoresist pattern on each of the wafers as a mask. And thereby forming a circuit pattern corresponding to the patterns on the reticle among the individual illumination regions on each of the wafers. Then, components such as semiconductor elements are fabricated through a plurality of steps including forming a circuit pattern in the upper layer. The above-described half-body 7L manufacturing method allows us to manufacture semiconductor elements having extremely fine circuit patterns with a high total throughput. Steps S40 to S48 are arranged to perform individual steps of depositing metal on the wafer, applying the photoresist to the metal film, exposing, developing, and etching, but it is of course the following To modify the process: before the steps, an oxide film is formed on the wafer, and then a photoresist is applied on the oxidized film, and then exposure, development, and sculpt are performed. The exposure apparatus of the above embodiment can also manufacture the liquid 75 201027120 crystal display element into a micro component by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a flat plate (glass substrate). Putian will explain an example of the method in this case with reference to the flowchart of Fig. 15. In U圃^ 圃15, the circle is formed in step S50. The so-called photolithography step is performed. The exposure device of the above embodiment transfers the pattern of the mask to the photosensitive base & Above a photoresist glass substrate or the like). This photolithography step results in the formation of a predetermined pattern containing a large number of electrodes and other patterns on the photosensitive substrate. Then, the exposed substrate is processed through each step including a development step, a step, a photoresist removal step, and the like so that the pre-pattern # is formed on the substrate, and then proceeds. The next color filter constitutes step S52. / The next color enamel sheet forming step S52 is to form a color filter having a plurality of filters consisting of three points corresponding to R (red), G (green), and b (blue) The assembly is arranged in a matrix pattern by a array or 'in which the filter set consisting of three stripes of R, G and B is arranged in the horizontal scan line direction by the array. After the color filter constituting step S52, the cell body assembling step S54 is performed. The cell assembly step S54 is to assemble a substrate using a substrate having a predetermined pattern obtained in the pattern forming step S5, a color filter obtained in the color filter forming step S52, and the like. Liquid crystal panel (liquid crystal cell body). In the cell assembly step S54, for example, it is poured into the substrate having the predetermined pattern obtained in the pattern forming step S5, and in the color filter forming step S52. The liquid crystal panel (liquid crystal cell body) was produced between the obtained color filters. The subsequent module assembly step S56 is to adhere various components of the assembled liquid crystal panel (the liquid crystal cell 76 201027120 body), such as an electric circuit and a backlight for display operation, to complete the liquid crystal display element. The manufacturing method of the liquid crystal display element described above allows us to manufacture a liquid crystal display element having a very fine circuit pattern with a high total throughput. It should be noted that the description of the embodiments explained above is to more easily understand the present invention and is not intended to limit the invention. Therefore, each of the devices disclosed in the embodiments is intended to cover all design variations and equivalents falling within the technical scope of the invention. Each of the constituent devices and other devices in the above embodiments can be applied in any combination or other manner. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the configuration of an exposure apparatus according to an embodiment of the present invention. Shown in Fig. 2 are rectangular irradiation regions formed on the first reticle and the second reticle, respectively. Fig. 3 is a view showing a pattern image of the first mask 经由 and a pattern image of the second mask formed by the projection optical system. Figure 4 shows the positional relationship between a rectangular static exposure region formed over a wafer and a reference optical axis in this embodiment. Fig. 5 is a schematic view showing the arrangement between the boundary lens and the wafer in the embodiment. Fig. 6 is a view showing a lens configuration of a projection optical system according to a first example of the embodiment. Fig. 7 is a diagram showing the difference in the lateral image 77 201027120 in the projection optical system of the first example. Fig. 8 is a view showing a lens configuration of a projection optical system according to a second example of the embodiment. Fig. 9 is a view showing the relationship of lateral aberrations in the projection optical system of the second example. Fig. 10 is a view showing a lens configuration of a projection optical system according to a third example of the embodiment.

Fig. 11 is a view showing the relationship of lateral aberrations in the projection optical system of the third example. Fig. 12 is a view showing a lens configuration of a projection optical system according to a modified example of the third example. Fig. 13 is a view for explaining an exposure sequence in which scanning exposure is continuously performed in a plurality of irradiation regions aligned in the scanning direction. Figure 14 is a flow chart of a method for fabricating a semiconductor device. Figure 15 is a flow chart showing a method for fabricating a liquid crystal display element.

Light source First optical system Compound eye lens Second optical system Projection optical system Pattern area [Main component symbol description] la, lb 2a, 2b 3a, 3b 4a, 4b PL Paa 78 201027120

Pab pattern area ΑΧ Reference optical axis AX1 Optical axis AX2 of the first imaging optical system Optical axis AX3 of the second imaging optical system Optical axis AX4 of the third imaging optical system Optical axis AX5 of the fourth imaging optical system Fifth imaging optical system Optical axis AX6 Optical axis AX7 of the sixth imaging optical system Optical axis Axa of the seventh imaging optical system Optical axis Axb of the first illumination system Optical axis of the second illumination system AS Aperture blocking MSa, MSb Mask platform MSD Mask platform drive System Mba Mask Mask MBb Mask Mask Ma, Mb Mask Era First Effective Image Area Erb Second Effective Image ER Effective Image W Wafer WS Wafer Platform WSD Wafer Platform Drive System Ira Irradiation Area 79 201027120

Irb irradiation area Ila, ILb illumination system IF image circle LO1 offset distance L02 offset distance Lxa X-direction length LXb of first static exposure area X-direction length Lya of second static exposure area Y-direction length Lyb of first static exposure area Y-direction length Lm of the second static exposure zone Liquid Lb Boundary lens B Image circle radius G1 to G7 Imaging optical system LI 1 Lens L12 Lens L14 Lens L15 Lens L16 Lens L18 Lens L18 Lens L22 Lens L22 Lens

80 201027120

L23 L31 L32 L33 L34 L35 L36 L37 L38 L39 L41 L42 L43 L44 L45 L46 L47 L48 L48 L49 L51 L52 L53 L61 L62 L61 L61 L61 L61 L61 L61 L62 L62 L62 L62 L62 L62 L62 L62 L62 L63 lens L64 lens L65 lens L66 lens L67 lens L68 lens L69 lens L71 lens L72 lens L73 lens L74 lens L75 lens L76 lens L77 lens L78 lens L79 lens LI 10 lens Llll lens L112 lens L310 lens L410 lens L411 lens L412 lens L610 lens

82 201027120

L710 lens L71 1 lens L712 lens L713 lens L714 lens L715 lens CPI first conjugate point CP2 second common point CP3 third conjugate point CP4 fourth total vehicle point CP5 fifth conjugate point CP6 sixth conjugate point CM2 Concave mirror FM mirror R37 Reflecting surface R67 Reflecting surface M12 Reflecting mirror R12 Reflecting surface M23 Reflecting mirror R23 Reflecting surface M45 Reflecting mirror R45 Reflecting surface M56 Reflecting mirror R56 Reflecting surface 83 201027120

Shl to Shn S40 to S48 S50 to S56 illumination area Method steps Method steps

84

Claims (1)

201027120 VII. Patent application scope: 1. A projection optical system for forming an image of a first surface and an image of a second surface on a third surface, comprising: a first imaging optical system, which is disposed between Among the optical paths between the first surface and the first conjugate point, the first conjugate point will be optically conjugate with a point on the first surface and the optical axis will be at the point and the first a surface intersecting; a second imaging optical system disposed in an optical path between the first conjugate point and the second conjugate point, the second common point being located on the first surface This point produces an optical conjugate and the optical axis will intersect the first surface at that point; the second imaging optical system 'which will be placed between the second common point and the second conjugate point Among the paths, the third conjugate point will be optically conjugate with the point on the first surface and the optical axis will intersect the first surface at the point; the fourth imaging optical system 'will be placed at Between the second surface and the fourth Among the optical paths, the fourth total light point will be optically shared with a point on the first surface and the optical axis will intersect the second surface at the point; the fifth imaging optical system Provided in an optical path between the fourth common roll point and the fifth conjugate point, the fifth conjugate point will be optically light and the optical axis will be at the point on the first surface Intersecting the second surface at the point; a sixth imaging optical system that is disposed in an optical path between the fifth conjugate point and a sixth conjugate point of 85 201027120, the sixth common vehicle a point will be optically conjugate with the point on the second surface and the optical axis will intersect the second surface at the point; a seventh imaging optical system that is disposed between the third surface and the first a second deflecting member and an optical path between the sixth conjugate point; a first deflecting member disposed between a surface of the third imaging optical system closest to the third surface and the seventh The surface of the imaging optical system closest to the first surface And in the optical path, and configured to direct light from the third imaging optical system to the seventh imaging optical system; and a first deflecting member 'which is disposed between the sixth imaging optics An optical path between a surface of the system closest to the third surface and a surface of the seventh imaging optical system closest to the second surface and configured to receive the sixth imaging optical system Light is guided to the seventh imaging optical system, wherein each of the optical devices having the magnification in the seventh imaging optical system is a refractive optical device. The projection optical system of claim 1, wherein the first imaging optical system and the fifth imaging optical system each comprise a concave reflecting mirror. 3. The projection optical system of claim 1 or 2, wherein the first imaging optical system and the fifth imaging optical system each comprise a negative lens. The projection optical system 86 201027120 of any one of claims 1 to 3, wherein the first deflecting member is disposed near the third conjugate point, and wherein the S-second bias is The component is disposed adjacent to the sixth conjugate point. 5. The projection optical system of any one of claims 1-4, which has a reduction magnification system, wherein the first imaging optical system, the third imaging optical system, the fourth imaging optical system, and Each of the optical devices having the magnification in the sixth imaging optical system is a refractive optical device. 7. The projection optical system of any one of claims 1-6, further comprising: - a third deflecting member disposed between the first surface and the first deflecting member And a fourth deflecting member disposed between the optical path between the second surface and the second deflecting member, ❹ 6. as in any of claims 1-5 to 5 Projection wherein the reflective surface of the first-biasing member and the reflective surface of the third deflecting member are arranged in parallel with each other, and wherein the reflective surface of the first deflecting member and the reflective surface of the fourth deflecting member are arranged to each other parallel. 8. The projection optical system of claim 7, wherein the biasing member is disposed between the surface of the second imaging optical system closest to the first surface and the third imaging optical system. Among the optical paths between the surfaces closest to the first surface, and the second deflecting member disposed between the fifth imaging optical system and closest to the second in the third surface optical system The surface...the optical path between the surface of the imaging optical system. 9. The projection optical system of claim 8, wherein the 87th 201027120 two deflecting member is disposed adjacent to the second common vehicle point, and wherein the fourth deflecting member is disposed at the fifth conjugate point nearby. 10. The projection optical system of claim 8 or 9, wherein 'no point in the optical path between the second conjugate point and the third conjugate point is located above the optical axis a point produces an optical total light' and no point in the optical path between the fifth conjugate point and the sixth conjugate point is optically conjugate with a point above the optical axis, and wherein the The imaging magnification cold 3 of the three imaging optical system and the imaging magnification stone 6 of the sixth imaging optical system satisfy the following conditions: 〇·5&lt;| β 3|&lt;2.0 ; 〇.5&lt;| no 6丨&lt;;2.0. 11. The projection optical system according to any one of claims 8 to 1, wherein the third imaging optical system and the sixth imaging optical system are optical systems that are telecentric on the injection side and on the emission side And an angle between a chief ray of the second imaging optical system and the optical axis from each of the first effective field regions on the first surface and from each point in the first effective field region The angle between the chief ray that exits the third imaging optical system and the optical axis is not greater than five. , wherein an angle between a chief ray of the eighth imaging optical system and a pupil optical axis is incident from each of the second effective field regions on the second surface and each of the first effective field regions The point of incidence between the chief ray of the sixth imaging optical system and the optical axis is not greater than 5. In the case of 88 201027120 and the eighth, the second imaging optical system and the fifth imaging optical system each include a positive lens. 12. The projection optical system of claim 7, wherein the second deflecting member is disposed between the first imaging optical system and the surface of the third surface and the second imaging optical system Among the optical paths between the surfaces closest to the first surface, and wherein the fourth deflecting member is disposed between the surface of the fourth imaging optical system closest to the third surface and the Among the fifth imaging optical systems, the most sin is in the optical path between the surfaces of the second surface. 13. The projection optical system of claim 12, wherein the second deflecting member is disposed adjacent to the first conjugate point, and wherein the fourth deflecting member is disposed adjacent to the fourth conjugate point . 14. The projection optical system of claim 12, wherein the optical path between the second common point and the first common point is excluded from the second conjugate point Any point is optically conjugate with a point above the optical axis, and there is no point in the optical path between the sixth conjugate point and the fourth conjugate point except the fifth conjugate point a point located above the optical axis produces an optical conjugation, and wherein an imaging magnification side 23 of the composite optical system composed of the second imaging optical system and the third imaging optical system and by the fifth imaging optical system The imaging magnification / 356 of the composite optical system composed of the sixth imaging optical system satisfies the following conditions: 0.5 &lt;| β 23| &lt; 2.0 89 201027120 0·5 &lt;| Call 56|&lt;2.0. The projection optical system according to any one of claims 12 to 14, wherein the second imaging optical system and the fifth imaging optical system are optical systems that are telecentric on the incident side and the third imaging The optical system and the sixth imaging optical system are optical systems that are telecentric on the exit side, wherein each of the first effective field regions on the first surface is incident on a chief ray of the second imaging optical system and the The angle between the optical axes and the angle between the chief ray of the third imaging optical system and the optical axis from each point in the first effective field region are not greater than five. Wherein, from each of the second effective field regions on the second surface, an angle between a chief ray of the fifth imaging optical system and the optical axis and each point in the second effective field region The angle between the chief ray that exits the sixth imaging optical system and the optical axis is not greater than V, and wherein the second imaging optical system and the fifth imaging optical system each include a positive lens. q. The projection optical system of any one of claims 7 to 15 which satisfies the following conditions: D3^D1; D4^D2; D1=D2, wherein D1 is between the third surface And a distance between the reflection surface of the first deflecting member and the intersection of the optical axes of the seventh imaging optical system, a distance of 2010 201020120, where 'D2 is the reflective surface between the third surface and the second deflecting member a drawing distance between an intersection with an optical axis of the seventh imaging optical system, wherein 'D3 is between the first surface and the reflective surface of the third deflecting member and the optical axis of the first imaging optical system The axial distance between the intersections, and wherein D4 is the axial distance between the second surface and the intersection between the reflective surface of the fourth deflecting member and the optical axis of the fourth imaging optics. The projection optical system according to any one of the preceding claims, wherein the direction of the chief ray emitted from the first surface and the second surface and the chief ray incident on the third surface The opposite direction. 18. The projection optical system of any one of claims 1 to 17, wherein the optical© system consisting of the first surface to the first deflecting member and the second surface to the second bias The optical system consisting of the components has the same configuration. The projection optical system of any one of claims 7 to 8 which is used to convert a preset pattern to be set on at least one of the first surface and the second surface A projection optical system printed in an exposure apparatus of a photosensitive substrate set on the third surface, the projection optical system satisfies the following conditions: 2.2 &lt; D13/S &lt;5.0; 2.2 &lt; D24/S &lt; 5.0 » 91 201027120 The order of D13 is the third imaging. The optical axis of the system is between the intersection of the reflective surface of the first deflecting member and Τ and the optical axis of the seventh imaging optical system = and a distance between a reflecting surface of the second deflecting member and an intersection of the optical axes of the first imaging optical system, the optical axis of the system is between the reflective surface of the eighth imaging optical system The intersection of the optical axis of the imaging optical system ^ * ^ ^ '· and the distance between the reflection table of the fourth deflecting member and the optical axis of the fourth imaging optical system, and S represents the demarcation of the photosensitive substrate The most circles The projection optical system of any one of items 1 to 19, which has a first effective field region on the first surface that does not contain the optical axis of the first imaging optical system and Having a second effective field region on the second surface that does not include the optical axis of the fourth imaging optical system, the projection optical system satisfies the following condition: 0.05 &lt; L01 / B &lt;0.4; 0.05 &lt; L02 / B&lt;0.4, wherein L〇1 is a distance between an optical axis of the seventh imaging optical system and a first effective image region corresponding to the first effective image region formed on the third surface, and LG2 is the distance between the optical axis of the "imaging light (four) system and the second effective image area formed on the ith surface corresponding to the second effective field region, and B is on the third surface The maximum image height. The projection optical system of any of the preceding claims, wherein the first deflecting member and the second deflecting member are configured in an integrally formed manner, and wherein the reflecting by the first deflecting member The ridge line formed by the surface 92 r 201027120 and the reflective surface of the second deflecting member is located between the optical axis of the third imaging optical system, the optical axis of the sixth imaging optical system, and the optical axis of the seventh imaging optical system On the intersection. The projection optical system of any one of clauses 7 to 21, wherein the reflective surface of the first deflecting member and the reflective surface of the second deflecting member are arranged in alignment with the seventh imaging optical system The optical shaft forms 45, wherein the reflective surface of the third deflecting member is arranged to form 45 with the optical axis of the first imaging optical system. And wherein the anti-reflecting surface of the fourth deflecting member is arranged to form 45 with the optical axis of the fourth imaging optical system. The projection optical system satisfies the following conditions: 70 ° &lt; ( A1 + A3 ) &lt; 110 ° ; 7 〇. &lt; ( A2+A4) &lt;11〇. Wherein 'A3 is the incident angle of the light emitted from the first effective field region on the first surface incident on the reflective surface of the second deflecting member, and A1 is the same light incident on the reflecting surface of the first deflecting member The incident angle, Λ4 is _ the incident angle from the light emitted from the second effective field region on the second surface to the reflective surface of the fourth deflecting member, and Λ2 is the same light incident on the second deflecting member The angle of incidence of the reflective surface. The projection optical system of any one of claims 1 to 22, which is used in a state in which an optical path between the projection optical system and the third surface is filled with a liquid. The projection optical system of any one of claims 1 to 23 wherein the first surface and the second surface are located on the same plane. The projection optical system 93 201027120 of any one of claims 1 to 24, wherein the first surface, the second surface, and the third surface are horizontally extended and wherein the third surface It is located below the first surface and the second surface. 26. A projection optics system for forming an image of a first surface and an image of a second surface on a third surface for use in an exposure apparatus for establishing in the first surface and the second surface Transferring a preset pattern on at least one of them to a photosensitive substrate set up on the third surface, the projection optical system comprising: a first optical unit that directs light from the first surface to a path ❹ bonding element a second optical unit that directs light from the second surface to the path coupling element; and a third optical unit that is based on light from the first optical unit that has advanced through the path coupling element An image of the first surface is formed on the three surfaces, and an image of the second surface is formed on the third surface based on light from the second optical unit that has advanced through the k-binding element, Q The first surface, the second surface, and the third surface extend horizontally in a space below the projection optical system, and wherein the third surface is located at the first The lower surface and the second surface. 27. The projection optical system of claim 26, wherein the first optical unit comprises: a first imaging optical system disposed in an optical path between the first surface and the first conjugate point 94 201027120 The first conjugate point is optically conjugate with a point on the first surface and the optical axis intersects the first surface at the point; the second imaging gust system 'its &amp; is placed between The point between the first conjugate point and the second conjugate point conjugates a surface that is optically conjugated and the optical axis intersects the first surface at the point; and a third imaging optical system Provided in an optical path between the second conjugate point and the third conjugate point, the third conjugate point is optically conjugate with the point on the first surface and the optical axis is at the point Intersecting with the first surface, wherein the second optical unit comprises: a fourth imaging optical system disposed in an optical path between the second surface and the fourth common point, the fourth total The yoke point is optically conjugate with a point on the second surface and the optical axis intersects the second surface at the point; a fifth imaging optical system disposed between the fourth conjugate point and the fifth The fifth path of the stomach between the conjugate points An optical conjugate with the point on the second surface and an optical axis intersecting the second surface at the point; and a sixth imaging optical system disposed between the fifth common point and the sixth Among the optical paths between the points, the sixth conjugate point is optically conjugate with the point on the second surface and the optical axis intersects the second surface at the point, the second optical early The element includes a seventh imaging optical system disposed in an optical path between the third surface and the third conjugate point and the sixth conjugate point, and v, wherein the coupling element includes a first deflecting member that sets 95 201027120 between the surface of the third imaging optical system that is closest to the third surface and the surface of the seventh imaging optical system that is closest to the first surface And being configured to direct light from the third imaging optical system to the seventh imaging optical system; and a second deflecting member disposed closest to the sixth imaging optical system First surface And an optical path between the surface and a surface of the seventh imaging optical system closest to the surface of the table: and configured to guide light of the sixth imaging optical system to the seventh imaging optical system . </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; Based on the light of the pattern, the predetermined pattern is projected on the photosensitive substrate disposed on the third surface, and the exposure device includes an image for forming a first surface on the third surface and a projection optical system for imaging an image of the second surface, wherein the predetermined pattern set on at least one of the first surface and the second surface is transferred to a photosensitive substrate set on the third surface, The exposure device includes: a first illumination sheet 7L located below the first surface and providing first illumination light to the first surface, the second illumination unit being located below the second surface And providing a second illumination light to the second surface, wherein the first surface, the ++ surface, and the third surface extend horizontally in a space below the projection optical system. 96, 201027120 30. The exposure of claim 29, wherein the third surface is located below the first surface and the second surface. An exposure apparatus according to any one of the preceding claims, wherein the predetermined pattern and the photosensitive substrate are moved relative to the projection optical system to project the preset pattern on the photosensitive Above the substrate to expose it. 32. A method of manufacturing a component, comprising: performing exposure of the predetermined pattern on the photosensitive substrate by using an exposure apparatus of any one of the preceding claims 28 to 31; developing has been transferred The photosensitive substrate of the predetermined pattern is used to form a photomask layer having a shape corresponding to the predetermined pattern on the surface of the photosensitive substrate; and the surface of the photosensitive substrate is processed through the photomask layer. Eight, schema: ® (such as the next page) 97