201026417 六、發明說明： 【發明所屬之技術領域】 本發明概言之係關於鑽孔裝置，特別是關於利用一雷射光束鑽 製多個孔洞。 【先前技術】 雷射光束已用於製造系統多年，對諸如基板等物體實施作業， 用於物體之鑽製、熔融或燒蝕。為縮短製造時間，該等系統可利 用多個雷射光束。然而，利用多個光束實施鑽製之習知系統之操 作靈活性需要改進。 【發明内容】 本發明提供一種於一基板中具有變化同時性之改進之雷射鑽孔 系統及方法。 因此，根據本發明一較佳實施例，提供一種於一基板中具有變 化同時性之雷射鑽孔方法，包含：操作一雷射，以產生一單—輸 出光束，該單一輸出光束之複數脈波具有一總能量；以隨時間變 化之一程度’劃分該單一輸出光束為複數光束；以及施加該複數 光束至該基板上之複數鑽孔位置，包含：利用該複數光束中具有 一脈波能量之相應光束，同時鑽製多個孔洞之第一部分，該脈波 月巨I係為該總能量之一第一分率，此後，利用該複數光束中分別 具有一脈波能量之至少一個光束，鑽製該多個孔洞至少其中之一 之至少一第二部分’該脈波能量係為該總能量之至少一第二分 率’該第二分率係不同於該第一分率。 201026417 之數量 根據本發明-較佳實施例，該第—分率係為該多個孔洞 之一函數。 根據本發明-較佳實施例，該第二分率係為該多個孔洞之數量 之一函數，而該多個孔洞具有鑽製之該至少一第二部分。 根據本發明-較佳實施例，亦提供一種於—基板中具有變化同 時性之雷射鑽孔方法，包含:操作—雷射，以產生具有—總功率之 一單一輸出光束；以隨時間變化之—程度，劃分該單—輸出光束 為複數光束；以及施加該複數光束至該基板上之複㈣孔位置， 包含：利用該複數光束中具有—光束功率之相應光束，同時鑽製 多個孔洞之第-部分’該光束功率係為該總功率之—第—分率，， 此後’利用該複數光束中分別具有—光束功率之至少—光束，鑽 製該多個孔洞至少其甲之—之至少—第二部分，該光束功率係為 該總功率之至少-第二分率，該第二分率係不同於該第一分率。 ❹ 根據本發明-較佳實施例’該第一分率係為該多個孔洞之數量 之一函數。 根據本發明-較佳實施例’其中該第二分率係為該多個孔洞之 數量之一函數，而該多個孔洞具有鑽製之該至少一第二部分。 較佳地，該單一輸出光束包含以一脈波重複率（pulse repetition rate)產生之複數具有單一光束脈波能量之脈波，且其中該複數光 束中鑽製多個孔洞之第—部分之該等光束包含具有該脈波重複率 且脈波能量為該等單一光束脈波能量之該第一分率之脈波。另 外，該複數光束中鑽製該多個孔洞至少其中之一之至少一第二部 201026417 分之該至少一光束包含具有該脈波重複率且脈波能量為該等單一 光束脈波能量之至少該第二分率之脈波。或者，該複數光束中鑽 製該多個孔洞至少其中之一之至少一第二部分之該至少一光束包 含具有該脈波重複率之一因數（sub_multiple)且脈波能量為該等單 一光束脈波能量之一函數之脈波，其中該因數及該函數係因應該 第二分率被選擇。 根據本發明一較佳實施例，該單一輸出光束包含以一脈波重複 率所產生之複數具有單一光束脈波能量之脈波，且其中該複數光 束中鐵製多個孔洞之第—部分之該等光束包含具有該脈波重複率 之一第一因數且脈波能量為該等單一光束脈波能量之一第一函數 之脈波’該第-因數係因應該第—分率被選擇。另外，該複數光 束中鑽製該多個孔洞至少其中之_之至少—第二部分之該至少一 光束包含具有該脈波重複率之―第二因數且脈波能量為該等單一 光束脈波能量之-第二函數之脈波，該第二因數及該第二函數係 因應該第二分率被選擇。 【實施方式】 現參照第1圖，第1圖係為根據本發明-實施例-多鑽孔裝置 2〇之—示意圖。裝置20處於一處理單元36之全面控制之下，處 理单凡36通常由該裝置之操作人員操作。 處理單幻6通常包含—通用電腦處理器，該通用電腦處理 7編譯’㈣行本靖述功能。舉例^，該軟體可經由—網 路以電子形式下載到處理器中。另—選擇為或另外地，該軟體^ 201026417 提供於實體媒體中，諸如光學、磁或電子儲存媒體。還或者，該 處理器之至少某些功能可由專用或可程式化硬體執行。 裝置20包含一組選擇性引導面鏡38,各該引導面鏡之方位分別 由處理單元36產生之各個命令及指令單獨控制。該等引導面鏡在 本文中亦稱為可定位面鏡，擔任照射於其上之光束的轉向面鏡。 裝置20可於該裝置之一生產階段中用作一雷射鑽製設備，其中該 多個可定位面鏡用於引導各自之雷射子光束於一基板44中鑽製多 φ 個孔洞，基板44可係為安裝在一可移動工作臺42上之一單層或 一多層基板。除鑽製外，可理解，於該生產階段中，該設備可用 於類似於鑽製之作業，諸如材料之燒蝕及/或加工。在以下說明中， 必要時藉由添加一不同之字母至標識數位44，用以區分不同之基 板44。工作臺42可按照自處理單元36接收到之命令沿正交X、y 及z方向移動。 裝置20包含一雷射22,雷射22通常係為一固態雷射，產生由 φ 紫外線波長脈波組成之一單一雷射光束24。該光束之參數，包含 其總能量，係根據自處理單元36接收到之指令設置。在以下說明 中，舉例而言，假定雷射22以一固定重複率F Hz產生單一光束 24之脈波，每一脈波具有一總能量价J，因此該光束具有一平均 功率尸=汾W。在本發明一實施例中，該光束之脈波具有約30 ns 之一寬度。該等脈波以一固定重複率FHOO kHz產生，每一脈波 具有一總能量五ί«100 μ·Τ，因此該光束之平均功率為尸《10 W。通 常，該等雷射脈波之大約全部能量被用於該生產階段。 7 201026417 光束24穿過一柱狀透鏡26，枉狀透鏡26將該光束聚焦成一實 質準直光束，該實質準直光束被傳送至一聲光致偏器（acousto-optic deflector，AOD) 28。聲光致偏器28接收來自處理單元36之射頻 (RF)驅動輸入，該射頻輸入使該入射準直雷射光束繞射成一或 更多子光束29。子光束29通常產生於一二維平面中。處理單元 38藉由改變輸入至聲光致偏器28之射頻輸入參數可選擇該等子 光束之數量以及能量在該等子光束之間之分配。可在本發明之實 施例中使用之一聲光致偏器係為由法國 Saint-Remy-Les-Chevreuse 之 AA Optoelectronic 生產之 MQ180-A0,2-UV ° 為產生一或更多手光束29,處理單元36可用多種不同模式操作 聲光致偏器28，該等不同模式形成具有不同特徵之該等子光束。 下文參照第2A、2B及2C圖更詳細闡述該等不同之操作模式以及 所產生之子光束29之不同可能特徵。 一中繼透鏡（relay lens) 30將子光束29傳送至一第—組面鏡 32。面鏡32被定位，用以將其各自之入射光束以一三維子光束組 41之形式反射至一第二組面鏡34。為清晰起見，在第i圖中僅顯 示》亥二維子光束組之其中之一子光束之一路徑39。在以下閣述 中，根據要求用一字尾字母區分組41之每一子光束。因此，如第 1圖所示，有二十個面鏡34及二十個面鏡38 ,則子光束組41包 含二十個子光束41A、41B…41T。視情況，在以下闞述中，亦 將該相應字母添加至要求加以區分之元件。舉例而言，子光束 201026417 首先自子光束（暫以29B例稱，惟圖未標號）產生。然後子光束 41B又被面鏡（暫以32B及34B例稱，惟圖未標號）反射，並最 終被一可定位面鏡（暫以38B例稱，惟圖未標號）反射。面鏡32 及34之位置及方位通常固定，並被配置成使自面鏡34反射之三 維組子光束彼此大致平行。 自面鏡34反射之三維子光束組被傳送至可定位面鏡38。在面鏡 32、面鏡34與面鏡38之間係為光束調節及中繼光學，在第1圖 φ 中，為清晰起見，用透鏡35以示意該等光束調節及中繼光學。該 等光束調節及中繼光學確保由面鏡38反射之子光束係為窄的準直 光束。該等鏡片被處理單元36控制，以根據要求產生具有不同直 徑之子光束。在以下闡述中，亦將裝置20之產生子光束組41之 元件，即元件22、26、28、30、32、34及35在本文中稱為一子 光束產生系統33。 面鏡38耦合至一組安裝座中之一相應轉向組件，本文中稱為一 φ 可調之安裝座43。該組安裝座中之每一安裝座43分別由處理單元 36單獨控制，處理單元36能於一具體安裝座之特性界限内引導該 安裝座之方位，從而能引導耦合至談安裝座之面鏡之方位。該等 安裝座及其耦合面鏡被設置為使來自該等面鏡之反射子光束與可 移動工作臺42之表面大致正交。通常，安裝座43利用附裝面鏡 38之電流計馬達來實施二轴面鏡轉向。 第2A、2B及2C圖係為根據本發明一實施例之示意圖，圖解闡 述聲光致偏器28之三種不同操作模式。該前二種模式可由一聲光 9 201026417 致偏器’諸如上述由AA Optoelectronic生產之聲光致偏器實施。 在所有模式中，該入射雷射光束、聲波在該聲光致偏器中之傳播 方向以及由該聲波產生之一或更多子光束係在一單一平面中。 於第2A圖中圖示之一第一模式中，處理單元36產生具有一振 幅A1及一頻率F1之一射頻信號。該射頻信號形成一聲波，該聲 波使聲光致偏器28做為具有一單一線距（pitch)之一繞射光柵。 該光柵以一角度αΐ反射來自透鏡26之入射雷射光束24 (第1 圖）’從而形成一單一子光束29。處理單元36可藉由改變頻率F1 之值而改變角度α1。該子光束脈波之能量可藉由改變振幅Α1而 改變。 在該第一模式中，該聲光致偏器通常以至多約90%之一光束轉 換效率（beam transfer efficiency )(η)運作，故而藉由改變Α1之 值，該單一子光束之脈波能量係為五=η£：ί，其中沿係為光束24 之脈波能量，且0.9。剩餘之能量係為未反射之脈波能量以及 低效率更高之譜波。未反射之脈波能量通常被一光束收集器吸 收。該單一子光束之脈波之重複率與光束24之脈波之重複率相 同，而該子光束之平均功率係為ηΡ，其中尸係為光束24之平均 功率。 在第2Β圖中圖解闡述之一第二模式中，處理單元36產生具有 二或更多不同頻率FI、F2……之一組合射頻信號。由D. L. Hecht 於 IEEE Trans. Sonics Ultrasonics SU-24(1)，7-18(1977)中發表之標 題為「多頻率聲光繞射」之論文闡釋該第二模式之運作。 201026417 在第2B圖中為簡便起見，僅顯示二個不同頻率之效應。處理單 元36產生之各該頻率具有一各自之振幅Al、A2……。處理單元 36產生該射頻信號之不同頻率，以使聲光致偏器28有效地做為一 多線距之繞射光柵，該射頻輸入使一聲波在該聲光致偏器中傳 播。在本例中，入射雷射光束24因應於不同頻率FI、F2……之 數量被劃分為多個子光束29A、29B……。各該子光束之角度αΐ、 α2……各自取決於頻率FI、F2……。 參 每一子光束之脈波能量Ea、Eb可寫為：Ea = naEt，Eb = r|bEt， 其中ηα < 1且rib < 1。該聲光致偏器之特徵通常允許該等現有光 束之總脈波能量不大於約70%，因而在本文所述實例中五α +五厶S 0,7价。在此總限制内，處理單元36可藉由改變相應射頻頻率之振 幅之數值（在此處之實例中為A1及A2)而改變各該子光束之脈 波能量。對於該第一模式，任何未反射能量皆可被一光束收集器 吸收。現有子光束之脈波重複率與該入射光束之脈波重複率相 φ 同，且對於具有平均功率P之一入射光束，每一子光束之平均功 率係由尸a = na尸、尸6 = r)b尸得出。 在第2C圖中圖解闡釋之一第三模式中，處理單元36產生一射 頻信號，有效地將聲光致偏器28劃分為二或更多具有不同線距之 光柵。為實施該第三模式，該聲光致偏器之操作視窗需自「現成」 聲光致偏器（例如上述聲光致偏器）中通常使用之值擴展。該擴 展允許在該聲光致偏器中以一「倂排」方式形成不同之光柵。熟 習此項技術者將能定義該擴展之量以及產生該擴展之要求而無需 11 201026417 進行過度的實驗。 為簡便起見，在以下對該第三模式之闡述中，假定聲光致偏器 28可有效地劃分為二個光柵。該第三模式之射頻信號具有二個分 頻率FI、F2，每一分頻率具有一相應振幅Al、A2。不同於該第 二模式之射頻輸入，該第三模式之射頻輸入使該等不同分頻率交 替出現，而非如在該第二模式中那樣將其組合。 在該第三模式中，一位於聲光致偏器28之前之一分光器 (beamsplitter)(第2C圖中未繪示）將入射光束24劃分為二個光 束24A及24B。該分光器通常係為一光學分光器，可具有任何適 宜之分光率，如50:50。或者，上述之通常被設置用以以該第二模 式運作之另一聲光致偏器可用作一分光器。若光束24具有一脈波 能量五ί，光束24A及24B具有各自之脈波能量a五ί及其中a、 b <1且a及b之值係為該分光器之特徵。 如上文針對該第一模式所述，每一光束24A、24B被一不同之光 柵按照該光柵之線距被反射。由該第三操作模式產生之子光束 29C、29D具有各自之脈波能量五<:、，由五c = 、五£/ = br|b£7 得出，其中na<l且η!)<1。如同該第一模式，na及r|b可藉由分 別改變A1及A2之值而改變，並通常具有至多約0.9之值。對於 一輸入平均光束功率尸，該等子光束之平均功率由Pc = anaP、/V =br|bF 得出。 如同該第一及第二模式，在該第三模式中任何未反射能量皆可 被一光束收集器吸收。 201026417 在上文對聲光致偏器28之三種操作模式之描述中，自聲光致偏 器28輸出之該等子光束具有與輸入光束24相同之脈波重複率， 即相同之頻率。然而，此並非必要條件，在本發明之某些實施例 中，處理單元36調節至該聲光致偏器之射頻輸入，以使該子光束 輸出之頻率係為該輸入頻率之一因數。舉例而言，在第2A圖中所 示之系統中，處理單元36可按照光束24之脈波重複率使輸入至 聲光致偏器28之頻率在F1與F2之間交替。此使得脈波自光束 φ 24之轉向在角度αΐ與角度α2之間交替，因而在各該子光束中輸 出之脈波具有係為光束24脈波之頻率值一半之一頻率。 在本例中，該等脈波能量可與該等入射脈波能量大致相同。然 而，由於該等子光束中脈波之重複率降低、故而該平均子光束功 率顯著不同於該平均入射光束功率。舉例而言，若該入射光束具 有脈波能量价及平均功率Ρ，且Α1及Α2之值被設置成使每一子 光束之脈波具有相等能量τ^ί，則該等子光束因該等脈波之減半重 _ 複率而具有一平均功率f。 具有將該等子光束之脈波率設置為該入射光束之脈波率之一因 數之能力可在鑽製一給定材料時提供額外之靈活性。由於脈波能 量通常係為最能控制對材料之效應之參數，故而如上述降低子光 束之平均功率並同時使脈波能量大致與入射光束脈波能量相同， 可有利地用於鑽製材料。舉例而言，降低平均功率可提供額外之 脈波間冷卻時間。 除上述子光束之不同類型外，處理單元36藉由改變輸入至該聲 13 201026417 光致偏器之射頻輸入參數而有效地設置每一脈波之能量，從而能 調整任何特定子光束隨時間之總能量分佈。舉例而言，在該第一 模式中，不是藉由急劇改變A1而急劇改變子光束脈波之能量，而 是該處理單元可將該等能量配置成隨多個脈波線性降低。此一斜 坡線性降低可用於防止自一基板層誤去除一金屬，如銅。 對以上對聲光致偏器28之闡述予以考量，可發現裝置20提供 一系統，其中處理單元36可改變在任何給定時間上被同時利用之 雷射子光束29之數量。另外，處理單元36能選擇每一子光束29 中脈波能量之分率，利用每一子光束之時間調整該總能量分佈， 以及將每一子光束29之脈波頻率設置成與輸入光束24之脈波頻 率相同或為該光束脈波頻率之一因數。 以下闡述内容提供不同實例，說明裝置20如何應用不同之子光 束數量、各該子光束中脈波之不同可能能量、以及該等子光束之 不同特徵，以有效率地鑽製不同之基板。如述，該可變之數量以 及不同之能量及特徵能使鑽製不同基板所花費之時間縮至最短。 該闡述假定，處理單元36可產生具有一最大子光束脈波能量Em 之任何單一光束，且該處理單元可產生多個子光束，各該子光束 具有小於五m之脈波能量。 雖然以下說明以舉例方式利用一三層基板，但可理解，該說明 可比照適用於具有二層或任何其他數量之層之基板之鑽製或加 工。 第3A-3I圖係為根據本發明一實施例，在鑽製一基板44A之一 201026417 時間進程中不同階段之示意圖。第3A-3I圖係為基板44A之剖面 示意圖，第3A圖對應於該進程之一初始時刻，第31圖對應於一 最終時刻。該基板被假定為具有相對難鑽製之一上部第一層102、 較容易鑽製之一第二層104以及不加以鑽製之一第三層1〇6。假定 擬在該基板中鑽製四個實質類似之孔洞110、112、114、116，即 具有相等直徑之孔洞。然而，假定二個孔洞114、116之孔洞下界 位於層104之一上表面108,係在一第一製程中完成。假定另外二 φ 個孔洞110、112之孔洞下界係利用一第二不同製程完成。 舉例而言，假定該四個孔洞110、112、114、116由分別自面鏡 38A、38B、38C及38D反射之四個單獨之子光束41A、41B、41C 及41D鑽製。如上所述，子光束41A、41B、41C及41D係分別 自子光束29A、29B、29C及29D形成。201026417 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates generally to a drilling apparatus, and more particularly to drilling a plurality of holes using a laser beam. [Prior Art] Laser beams have been used in manufacturing systems for many years to perform operations on objects such as substrates for drilling, melting or ablating objects. To reduce manufacturing time, these systems can utilize multiple laser beams. However, the operational flexibility of conventional systems that utilize multiple beams to perform drilling needs to be improved. SUMMARY OF THE INVENTION The present invention provides an improved laser drilling system and method having varying simultaneity in a substrate. Therefore, in accordance with a preferred embodiment of the present invention, a laser drilling method having varying simultaneity in a substrate is provided, comprising: operating a laser to generate a single-output beam, the plurality of pulses of the single output beam The wave has a total energy; dividing the single output beam into a plurality of beams at a degree that varies with time; and applying the plurality of beams to the plurality of drilling positions on the substrate, comprising: utilizing a pulse energy in the plurality of beams Corresponding beams, at the same time, drilling a first portion of the plurality of holes, the pulse wave I is the first fraction of the total energy, and thereafter, using at least one beam of the complex beam having a pulse energy, Drilling at least a second portion of at least one of the plurality of holes 'the pulse energy is at least a second fraction of the total energy'. The second fraction is different from the first fraction. The number of 201026417 According to the preferred embodiment of the invention, the first fraction is a function of the plurality of holes. According to a preferred embodiment of the invention, the second fraction is a function of the number of the plurality of holes, and the plurality of holes have the at least one second portion drilled. According to a preferred embodiment of the present invention, there is also provided a laser drilling method having varying simultaneity in a substrate, comprising: operation-laser to generate a single output beam having a total power; to vary over time Degree-dividing the single-output beam into a plurality of beams; and applying the complex beam to the complex (four) hole position on the substrate, comprising: utilizing a corresponding beam having a beam power of the plurality of beams while drilling a plurality of holes The first part - the beam power is the - the first fraction of the total power, and thereafter - using at least the beam power of the plurality of beams, the plurality of holes are drilled at least At least - the second portion, the beam power is at least a second fraction of the total power, the second fraction being different from the first fraction. ❹ According to the invention - the preferred embodiment, the first fraction is a function of the number of the plurality of holes. According to the invention - the preferred embodiment wherein the second fraction is a function of the number of the plurality of holes, the plurality of holes having the at least one second portion drilled. Preferably, the single output beam comprises a plurality of pulse waves having a single beam pulse energy generated by a pulse repetition rate, and wherein the plurality of holes are drilled in the plurality of holes The equal beam includes a pulse wave having the pulse wave repetition rate and the pulse wave energy being the first fraction of the single beam pulse energy. In addition, at least one second portion of the plurality of holes in which the at least one of the plurality of holes is drilled in the plurality of beams includes the pulse repetition rate and the pulse energy is at least the energy of the single beam pulse energy The pulse of the second rate. Or the at least one beam of the at least one second portion of the plurality of holes in which the at least one of the plurality of holes is drilled has a factor (sub_multiple) having a pulse repetition rate and the pulse wave energy is the single beam pulse A pulse of a function of wave energy, wherein the factor and the function are selected according to a second fraction. According to a preferred embodiment of the present invention, the single output beam comprises a plurality of pulse waves having a single beam pulse energy generated by a pulse repetition rate, and wherein the plurality of holes of the plurality of holes in the plurality of beams are The beams comprise a pulse having a first factor of the pulse repetition rate and a pulse energy of a first function of the energy of the single beam pulse. The first factor is selected based on the first rate. In addition, at least one of the at least one of the plurality of holes is drilled in the plurality of beams, and the at least one beam of the second portion includes a second factor having the pulse wave repetition rate and the pulse wave energy is the single beam pulse wave The pulse of the energy-second function, the second factor and the second function being selected according to the second fraction. [Embodiment] Referring now to Figure 1, Figure 1 is a schematic view of a multi-drilling device according to the present invention. The device 20 is under the full control of a processing unit 36, which is typically operated by the operator of the device. Handling Single Fantasy 6 usually includes a general-purpose computer processor that handles the 7-compilation function. For example, the software can be downloaded to the processor in electronic form via a network. Alternatively - alternatively or additionally, the software ^ 201026417 is provided in physical media, such as optical, magnetic or electronic storage media. Still alternatively, at least some of the functionality of the processor can be performed by dedicated or programmable hardware. Apparatus 20 includes a plurality of selective guiding mirrors 38, each of which is individually controlled by respective commands and commands generated by processing unit 36. These guiding mirrors, also referred to herein as positionable mirrors, serve as steering mirrors for the beam of light that illuminates them. The device 20 can be used as a laser drilling apparatus in a production stage of the apparatus, wherein the plurality of positionable mirrors are used to guide the respective laser beam to drill a plurality of holes in a substrate 44, the substrate 44 may be a single layer or a multi-layer substrate mounted on a movable table 42. In addition to drilling, it will be appreciated that during this stage of production, the apparatus can be used in operations similar to drilling, such as ablation and/or processing of materials. In the following description, a different base plate 44 is distinguished by adding a different letter to the identification digit 44 as necessary. Workbench 42 can be moved in the orthogonal X, y, and z directions in accordance with commands received from processing unit 36. Apparatus 20 includes a laser 22, which is typically a solid state laser that produces a single laser beam 24 comprised of φ ultraviolet wavelength pulses. The parameters of the beam, including its total energy, are set according to instructions received from processing unit 36. In the following description, for example, it is assumed that the laser 22 produces a pulse of a single beam 24 at a fixed repetition rate F Hz, each pulse having a total energy valence J, so that the beam has an average power of corpses = 汾 W . In an embodiment of the invention, the pulse wave of the beam has a width of about 30 ns. The pulse waves are generated at a fixed repetition rate of FHOO kHz, each pulse having a total energy of five ί «100 μ·Τ, so the average power of the beam is 10 W. Typically, approximately all of the energy of the laser pulses is used in this stage of production. 7 201026417 The beam 24 passes through a lenticular lens 26 which focuses the beam into a solid collimated beam which is transmitted to an acousto-optic deflector (AOD) 28. The acousto-optic deflector 28 receives a radio frequency (RF) drive input from the processing unit 36 that diffracts the incident collimated laser beam into one or more sub-beams 29. Sub-beams 29 are typically produced in a two-dimensional plane. Processing unit 38 may select the number of sub-beams and the distribution of energy between the sub-beams by varying the radio frequency input parameters input to acousto-optic deflector 28. One of the acoustic light deflectors that can be used in embodiments of the present invention is MQ180-A0, manufactured by AA Optoelectronic of Saint-Remy-Les-Chevreuse, France, which produces one or more hand beams 29, Processing unit 36 can operate acousto-optic deflector 28 in a variety of different modes that form the sub-beams having different characteristics. These different modes of operation and the different possible features of the resulting sub-beams 29 are explained in more detail below with reference to Figures 2A, 2B and 2C. A relay lens 30 transmits the sub-beam 29 to a first group mirror 32. The mirrors 32 are positioned to reflect their respective incident beams in the form of a three-dimensional sub-beam set 41 to a second set of mirrors 34. For the sake of clarity, only one of the sub-beams 39 of the two-dimensional sub-beam group is shown in the i-th picture. In the following description, each sub-beam of 41 is grouped by a one-letter letter area as required. Therefore, as shown in Fig. 1, there are twenty mirrors 34 and twenty mirrors 38, and the sub-beam group 41 includes twenty sub-beams 41A, 41B, ..., 41T. Depending on the situation, the corresponding letter is also added to the component that requires differentiation in the following description. For example, the sub-beam 201026417 is first generated from the sub-beam (for example, 29B, but the figure is not labeled). Sub-beam 41B is then reflected by the mirror (for example, 32B and 34B, but not labeled), and is finally reflected by a positionable mirror (for example, 38B, but not labeled). The positions and orientations of the mirrors 32 and 34 are generally fixed and are configured such that the three dimensional sub-beams reflected from the mirror 34 are substantially parallel to each other. The three-dimensional sub-beam set reflected from the mirror 34 is transmitted to the positionable mirror 38. Between the mirror 32, the mirror 34 and the mirror 38, beam adjustment and relay optics are used. In Fig. 1, φ, for the sake of clarity, the lens 35 is used to indicate the beam adjustment and relay optics. The beam adjustment and relay optics ensure that the sub-beams reflected by the mirror 38 are narrow collimated beams. The lenses are controlled by processing unit 36 to produce sub-beams having different diameters as desired. In the following description, the elements of device 20 that produce sub-beam set 41, i.e., elements 22, 26, 28, 30, 32, 34, and 35, are also referred to herein as a sub-beam generating system 33. The mirror 38 is coupled to a respective one of a set of mounts, referred to herein as a φ adjustable mount 43. Each of the mounts 43 of the set of mounts is individually controlled by the processing unit 36. The processing unit 36 can guide the orientation of the mount within the characteristic limits of a particular mount, thereby guiding the mirror coupled to the mount. The orientation. The mounts and their coupling mirrors are arranged such that the reflected sub-beams from the mirrors are substantially orthogonal to the surface of the movable table 42. Typically, the mount 43 utilizes a galvanometer motor attached to the mirror 38 to effect biaxial mirror steering. 2A, 2B, and 2C are diagrams illustrating three different modes of operation of the acousto-optic deflector 28, in accordance with an embodiment of the present invention. The first two modes can be implemented by an acousto-optic 9 201026417 deflector' such as the acousto-optic deflector manufactured by AA Optoelectronic. In all modes, the incident laser beam, the direction of propagation of the acoustic wave in the acousto-optic deflector, and one or more sub-beams produced by the acoustic wave are in a single plane. In one of the first modes illustrated in Figure 2A, processing unit 36 produces a radio frequency signal having a amplitude A1 and a frequency F1. The RF signal forms an acoustic wave that causes the acousto-optic deflector 28 to act as a diffraction grating having a single pitch. The grating reflects the incident laser beam 24 (Fig. 1) from the lens 26 at an angle αΐ to form a single sub-beam 29. Processing unit 36 can change angle α1 by changing the value of frequency F1. The energy of the sub-beam pulse wave can be changed by changing the amplitude Α1. In the first mode, the acousto-optic deflector typically operates at a beam transfer efficiency (η) of up to about 90%, so by varying the value of Α1, the pulse energy of the single sub-beam The system is five = η£: ί, where the ray is the pulse wave energy of the beam 24, and 0.9. The remaining energy is the unreflected pulse wave energy and the less efficient spectral wave. The unreflected pulse wave energy is typically absorbed by a beam dump. The repetition rate of the pulse wave of the single sub-beam is the same as the repetition rate of the pulse wave of the beam 24, and the average power of the sub-beam is ηΡ, wherein the corpse is the average power of the beam 24. In one of the second modes illustrated in Figure 2, processing unit 36 produces a combined radio frequency signal having one or more different frequencies FI, F2, .... The operation of this second mode is illustrated by a paper entitled "Multi-Frequency Acousto-Optical Diffraction" published by D. L. Hecht in IEEE Trans. Sonics Ultrasonics SU-24(1), 7-18 (1977). 201026417 In Figure 2B, for the sake of simplicity, only the effects of two different frequencies are shown. Each of the frequencies produced by processing unit 36 has a respective amplitude Al, A2, .... Processing unit 36 produces different frequencies of the RF signal such that acousto-optic deflector 28 effectively acts as a multi-line diffraction grating that causes an acoustic wave to propagate in the acousto-optic deflector. In this example, the incident laser beam 24 is divided into a plurality of sub-beams 29A, 29B, ... in accordance with the number of different frequencies FI, F2, .... The angles α ΐ, α 2 ... of each of the sub-beams are each dependent on the frequencies FI, F2, .... The pulse wave energy Ea, Eb of each sub-beam can be written as: Ea = naEt, Eb = r|bEt, where ηα < 1 and rib < The acousto-optic deflector typically features a total pulse energy of no more than about 70% for the prior beams, and thus is 5 +/- 5 厶 S 0,7 valent in the examples described herein. Within this general limitation, processing unit 36 can vary the pulse energy of each of the sub-beams by varying the magnitude of the amplitude of the respective RF frequency (A1 and A2 in the example herein). For this first mode, any unreflected energy can be absorbed by a beam dump. The pulse repetition rate of the existing sub-beam is the same as the pulse repetition rate of the incident beam, and for an incident beam having an average power P, the average power of each sub-beam is determined by the corpse a = na corpse, corpse 6 = r) b corpse. In one of the third modes illustrated in Figure 2C, processing unit 36 produces a radio frequency signal that effectively divides acousto-optic deflector 28 into two or more gratings having different line spacings. To implement the third mode, the operating window of the acousto-optic deflector needs to be expanded from the values commonly used in "off-the-shelf" acousto-optic deflectors, such as the acousto-optic deflectors described above. This expansion allows different gratings to be formed in the acousto-optic deflector in a "strip" manner. Those skilled in the art will be able to define the amount of this extension and the requirements for generating the extension without the need for excessive experimentation with 11 201026417. For the sake of brevity, in the following description of the third mode, it is assumed that the acousto-optic deflector 28 can be effectively divided into two gratings. The third mode radio frequency signal has two division frequencies FI, F2, each of which has a corresponding amplitude Al, A2. Unlike the RF input of the second mode, the RF input of the third mode alternates the different frequency divisions rather than combining them as in the second mode. In this third mode, a beamsplitter (not shown in Figure 2C) located before the acousto-optic deflector 28 divides the incident beam 24 into two beams 24A and 24B. The beam splitter is typically an optical splitter and can have any suitable split ratio, such as 50:50. Alternatively, another acousto-optic deflector, generally configured to operate in the second mode, can be used as a beam splitter. If the beam 24 has a pulse energy of five, the beams 24A and 24B have respective pulse energy a ί and its a, b < 1 and the values of a and b are characteristic of the beam splitter. As described above for the first mode, each of the beams 24A, 24B is reflected by a different grating in accordance with the line spacing of the grating. The sub-beams 29C, 29D generated by this third mode of operation have their respective pulse energy energy five <:, derived from five c = , five £ / = br|b £7, where na < l and η!) <;1. As with the first mode, na and r|b can be varied by varying the values of A1 and A2, respectively, and typically have a value of up to about 0.9. For an input average beam power, the average power of the sub-beams is derived from Pc = anaP, /V = br|bF. As with the first and second modes, any unreflected energy in the third mode can be absorbed by a beam dump. 201026417 In the above description of the three modes of operation of the acousto-optic deflector 28, the sub-beams output by the acousto-optic deflector 28 have the same pulse repetition rate as the input beam 24, i.e., the same frequency. However, this is not a requirement. In some embodiments of the invention, processing unit 36 adjusts the RF input to the acousto-optic deflector such that the frequency of the sub-beam output is a factor of the input frequency. For example, in the system shown in Figure 2A, processing unit 36 may alternate the frequency input to acousto-optic deflector 28 between F1 and F2 in accordance with the pulse repetition rate of beam 24. This causes the pulse from the diversion of the beam φ 24 to alternate between the angle α ΐ and the angle α 2 , so that the pulse wave outputted in each of the sub-beams has a frequency which is half the frequency value of the pulse wave of the beam 24 . In this example, the pulse energy can be substantially the same as the energy of the incident pulses. However, since the repetition rate of the pulse wave in the sub-beams is lowered, the average sub-beam power is significantly different from the average incident beam power. For example, if the incident beam has a pulse energy valence and an average power Ρ, and the values of Α1 and Α2 are set such that the pulse waves of each sub-beam have equal energy τ^ί, then the sub-beams are The pulse wave is reduced by half _ rev. and has an average power f. The ability to set the pulse rate of the sub-beams to one of the pulse rates of the incident beam provides additional flexibility in drilling a given material. Since the pulse energy is usually the parameter that best controls the effect on the material, it is advantageously used to drill the material by reducing the average power of the sub-beams and simultaneously making the pulse energy approximately the same as the incident beam energy. For example, reducing the average power provides additional interpulse cooling time. In addition to the different types of sub-beams described above, processing unit 36 effectively sets the energy of each pulse by varying the RF input parameters input to the acoustic 13 201026417 photo-polarizer, thereby enabling adjustment of any particular sub-beam over time. Total energy distribution. For example, in the first mode, the energy of the sub-beam pulse waves is not drastically changed by abruptly changing A1, but the processing unit can configure the energy to linearly decrease with a plurality of pulse waves. This linear slope reduction can be used to prevent the erroneous removal of a metal, such as copper, from a substrate layer. Considering the above description of the acousto-optic deflector 28, it can be seen that the apparatus 20 provides a system in which the processing unit 36 can vary the number of laser beam 29 that are simultaneously utilized at any given time. In addition, the processing unit 36 can select the fraction of the pulse energy in each sub-beam 29, adjust the total energy distribution by the time of each sub-beam, and set the pulse frequency of each sub-beam 29 to be the input beam 24. The pulse wave frequency is the same or is a factor of the pulse frequency of the beam. The following description provides different examples of how the device 20 applies different numbers of sub-beams, different possible energies of the pulses in each sub-beam, and different characteristics of the sub-beams to efficiently drill different substrates. As stated, the variable amount and the different energies and characteristics minimize the time it takes to drill different substrates. The illustration assumes that processing unit 36 can generate any single beam having a maximum sub-beam pulse energy Em, and that the processing unit can generate a plurality of sub-beams, each having a pulse energy of less than five m. Although the following description utilizes a three-layer substrate by way of example, it will be appreciated that the description is applicable to drilling or processing of substrates having two or any other number of layers. 3A-3I is a schematic diagram of different stages in the process of drilling one of the substrates 44A in accordance with an embodiment of the present invention. 3A-3I is a schematic cross-sectional view of the substrate 44A, and Fig. 3A corresponds to an initial time of the process, and Fig. 31 corresponds to a final time. The substrate is assumed to have an upper first layer 102 that is relatively difficult to drill, one second layer 104 that is easier to drill, and a third layer 1〇6 that is not drilled. It is assumed that four substantially similar holes 110, 112, 114, 116, i.e., holes having equal diameters, are to be drilled in the substrate. However, it is assumed that the lower holes of the two holes 114, 116 are located on one of the upper surfaces 108 of the layer 104 and are completed in a first process. It is assumed that the lower holes of the other two φ holes 110, 112 are completed by a second different process. For example, assume that the four holes 110, 112, 114, 116 are drilled from four separate sub-beams 41A, 41B, 41C, and 41D that are reflected from mirrors 38A, 38B, 38C, and 38D, respectively. As described above, the sub-beams 41A, 41B, 41C, and 41D are formed from the sub-beams 29A, 29B, 29C, and 29D, respectively.
由於層102難以鑽製，處理單元36首先一次利用一個子光束鑽 製層102。每一子光束具有一脈波能量五m。舉例而言，假定每一 Φ 子光束之產生過程如下：以其第一模式操作聲光致偏器28 (第2A 圖）’依序施加一不同頻率W、/^、8、至該聲光致偏器。該 等不同頻率依序產生子光束29A、29B、29C，然後產生29D，該 等子光束分別形成子光束41A、41B、41C及41D。處理單元36 依序施加分別自面鏡38A、38B、38C及38D反射之子光束41A、 41B、41C及41D ’用以鑽製孔洞11〇、112、114及116各自之層 102部分。如第3A圖中所示’首先鑽製孔洞11()之層1〇2。然後， 如第3B、3C及3D圖中所示’依序鑽製孔洞112、114及116之 15 201026417 層102，各該層102部分用具有一脈波能量之一子光束鑽製。 第3E圖顯示在層102上已鑽製所有四個孔洞後基板44A之狀態。 由於層104易於鑽製，並由於已接近該層鑽製所有四個孔洞， 處理單元36如同用於鑽製層102 —樣同時操作該四個相同之子光 束41A、41B、41C及41D，如第3F圖中所示。假定該四個子光 束利用一可用總子光束能量E availiable 之實質相等分率可 4 用。該四個子光束藉由該處理單元以一第二模式（第2Β圖）操作 聲光致偏器28而同時形成，並提供具有組合頻率F/、F2、、 ，每一頻率具有一相應之振幅Al、Α2、A3及Α4之一射頻輸 入至該聲光致偏器。 選擇振幅Α1、'Α2、A3及Α4，以使每一子光束之脈波能量大致 相同，儘管由於該第二模式相較於上述該第一模式具有不同特 徵，但可理解&可用通常小於五奶。該四個子光束利用面鏡 (以38Α、38Β、38C及38D稱之，惟圖未標號）鑽製層104，且 用該四個子光束之鑽製持續至所有四個子光束已鑽製具有所要求 的合適深度之層104之一孔洞。 在第3G圖中所示之隨後之鑽孔中，對於孔洞114及116，處理 單元36藉由以該第二或第三模式操作聲光致偏器28而操作具有 大"於；Eavailiable 之大致相等之分率脈波能量五/之子光束41C、 4 41D。孔洞114及116之鑽製持續至已到達該等孔洞之上表面108。 此時，舉例.而言，孔洞114及116之鑽製最終結束。假定該終止， 舉例而言，係藉由將該二個子光束之能量自五/缓降至0而達成。 16 201026417 當用於孔洞114及116之該二個子光束之能量正緩降時，處理單 元36可將用於孔洞11〇及112之子光束41A、41B之脈波能量自 0緩升至五/’以便開始鑽製孔洞11〇及112。該緩降及緩升藉由該 處理單元向聲光致偏器28提供一適宜射頻輸入而實施，如上所述。 該處理單元繼續利用脈波能量五/鑽製孔洞110及112，直至到 達表面108 ’如第3H圖所示。舉例而言，假定處理單元36將該 等脈波所需能量維持在五/，直至完成表面108，此時該處理單元 Φ 終止孔洞110及112之鑽製。完成後之孔洞圖示於第31圖中。 第4A至41圖係為根據本發明一實施例在鑽製一基板44B之一 時間進程中不同階段之示意圖。第4A至41圖係為基板44B之剖 面示意圖，第4A圖對應於一初始時刻，第41圖對應於一最終時 刻。 假定基板44B具有相對難以鑽製之一上部第一層202、較容易 鑽製之一第二層204以及不加以鑽製之一第三層206。假定擬在該 ❹ 基板中鑽製八個孔洞209、210、212、214、216、218、220及222。 舉例而言，假定孔洞212、214、216、218、220及222具有相同 之直徑D1 ’而孔洞209、210具有相同之直徑D2，D2大於D1。 舉例而言，假定該八個孔洞209、210、212、214、216、218、 220 及 222 由分別自面鏡（暫以 38A、38B、38C、38D、38E、38F、 38G及38H稱之，惟圖未標號）反射之八個單獨之子光束41A、 41B、41C、41D、41E、41F、41G 及 41H 鑽製。子光束 41A...... 41H分別自子光束29A……29H形成。 17 201026417 如第4A圖中所示，處理單元36首先利用具有一脈波能量El 及一直徑D2之一子光束41A鑽製孔洞209。面鏡38A引導該子光 束。在層202中鑽製通孔持續至到達層204之一上表面208為止， 此時該處理單元停止鑽製孔洞209。 如第4B圖中所示，單元36然後利用具有一脈波能量£7及一直 徑D2之一子光束41B鑽製孔洞210，且面鏡38B引導該子光束。 該鑽製持續至到達上表面208為止，此時該處理單元停止鑽製孔 洞210，並開始鑽製孔洞212及214。 由於孔洞212及214之直徑較小，處理單元36同時鑽製該二孔 洞，如第4C圖中所示。為鑽製該等孔洞，該處理單元產生二個子 光束41C、41D，各自具有一相等脈波能量五2及直徑D1。五2係 為£7之一分率。單元36利用二個面鏡38C及38D將該等子光束 引導至該等不同孔洞。該處理單元通常利用聲光致偏器28之該第 二操作模式產生該二個子光束，因而該等子光束之脈波率與光束 24之脈波率相同。 或者，該二個子光束可藉由上文參照聲光致偏器28闡述之一或 更多方法產生。舉例而言，該處理單元可以該第一模式操作聲光 致偏器28，並在二個不同輸入頻率之間交替。這樣，該二個子光 束41C及41D可各自具有相等之脈波能量，但其脈波重複率為光 束24之脈波重複率之|。 孔洞212及214之鑽製持續至對於各該孔洞皆到達表面208。 當對於孔洞212及214到達表面208時，該處理單元停止鑽製 18 201026417 該等孔洞並開始鑽製孔洞216及218，如第4D圖中所示。為鑽製 孔洞216及218，處理單元36產生二個子光束41E、41F，利用二 個面鏡38E、38F引導該等子光束。產生該等子光束之方法通常如 上文針對子光束41C、41D所述。孔洞216及218之鑽製持續至對 於各該孔洞皆到達表面208。 當對於孔洞216及218到達表面208時，該處理單元停止鑽製 該等孔洞並開始鑽製孔洞220及222，如第4E圖中所示。為鑽製 φ 孔洞220及222，處理單元36產生二個子光束41G、41H，利用 二個面鏡38G、38H引導該等子光束。產生該等子光束之方法通 常如上文針對子光束41C、41D所述。孔洞220及222之鑽製持續 至對於各該孔洞皆到達表面208。 此時，對於基板44B中之所有八個孔洞，皆已鑽製層202。 如第4F圖中所示，該處理單元然後開始在層204中鑽製通孔209 及210。由於層204較層202更易於鑽製，處理單元36利用二個 φ 子光束41A及41B，將該二個子光束設置為具有大致相等之脈波 能量，該等脈波能量小於五/。該處理單元繼續鑽製孔洞209及 210,直至到達層206之一上表面224,此時該單元切斷子光束41A 及 41B。 在孔洞209及210已完成後，如第4G圖中所示，若有需要，單 元36能重新定位面鏡38A及/或38B，通常用以在將來鑽製基板 44B之其他區域。 層204較層202容易鑽製。因此，在鑽製孔洞212、214、216、 19 201026417 218、22〇及222時不是將其二個孔洞為—組並分成三組同時鑽 製’單元36通常係三個孔洞為—組並分成二組同時鑽製孔洞。Since layer 102 is difficult to drill, processing unit 36 first utilizes one sub-beam to drill layer 102 at a time. Each sub-beam has a pulse energy of five m. For example, assume that each Φ sub-beam is generated as follows: operating the acousto-optic deflector 28 (Fig. 2A) in its first mode to sequentially apply a different frequency W, /^, 8, to the sound and light Depolarizer. The different frequencies sequentially generate sub-beams 29A, 29B, 29C, and then produce 29D, which form sub-beams 41A, 41B, 41C and 41D, respectively. The processing unit 36 sequentially applies the sub-beams 41A, 41B, 41C, and 41D' reflected from the mirrors 38A, 38B, 38C, and 38D, respectively, to drill the respective portions 102 of the holes 11〇, 112, 114, and 116. The layer 1 〇 2 of the hole 11 () is first drilled as shown in Fig. 3A. Then, as shown in Figures 3B, 3C and 3D, holes 2010, 112, and 116 are sequentially drilled into layers 102, each layer 102 portion is drilled with a sub-beam having a pulse energy. Figure 3E shows the state of substrate 44A after all four holes have been drilled in layer 102. Since the layer 104 is easy to drill, and since all four holes have been drilled near the layer, the processing unit 36 operates the four identical sub-beams 41A, 41B, 41C, and 41D as if for the drilled layer 102, as in the first Shown in the 3F diagram. It is assumed that the four sub-beams can be used with a substantial equal fraction of the available total sub-beam energy E availiable. The four sub-beams are simultaneously formed by operating the acousto-optic deflector 28 in a second mode (second drawing) by the processing unit, and are provided with combined frequencies F/, F2, and each frequency having a corresponding amplitude. One of the Al, Α2, A3, and Α4 RF inputs are input to the acousto-optic deflector. The amplitudes Α1, 'Α2, A3, and Α4 are selected such that the pulse wave energy of each sub-beam is substantially the same, although since the second mode has different characteristics compared to the first mode described above, it is understood that & Five milk. The four sub-beams are drilled into the layer 104 using a mirror (referred to as 38Α, 38Β, 38C, and 38D, but not labeled), and the drilling of the four sub-beams is continued until all four sub-beams have been drilled. One of the layers 104 of the appropriate depth. In the subsequent drilling shown in FIG. 3G, for holes 114 and 116, processing unit 36 operates with a large "Evailiable by operating the acousto-optic deflector 28 in the second or third mode. The approximately equal fractional pulse energy is five/child beams 41C, 4 41D. The drilling of the holes 114 and 116 continues until the upper surface 108 of the holes has been reached. At this time, for example, the drilling of the holes 114 and 116 is finally completed. It is assumed that this termination is achieved, for example, by slowing the energy of the two sub-beams from five/slow to zero. 16 201026417 When the energy of the two sub-beams for the holes 114 and 116 is slowly decreasing, the processing unit 36 can raise the pulse energy of the sub-beams 41A, 41B for the holes 11 and 112 from 0 to 5/'. In order to start drilling holes 11 and 112. The ramp down and ramp up are implemented by the processing unit providing a suitable RF input to the acousto-optic deflector 28, as described above. The processing unit continues to utilize the pulse energy five/drill holes 110 and 112 until the surface 108' is reached as shown in Figure 3H. For example, assume that processing unit 36 maintains the energy required for the pulse waves at five/ until surface 108 is completed, at which point processing unit Φ terminates the drilling of holes 110 and 112. The hole diagram after completion is shown in Figure 31. 4A through 41 are schematic views of different stages in the process of drilling a substrate 44B in accordance with an embodiment of the present invention. 4A to 41 are schematic cross-sectional views of the substrate 44B, and Fig. 4A corresponds to an initial time, and Fig. 41 corresponds to a final time. It is assumed that the substrate 44B has an upper first layer 202 that is relatively difficult to drill, one second layer 204 that is easier to drill, and one third layer 206 that is not drilled. It is assumed that eight holes 209, 210, 212, 214, 216, 218, 220 and 222 are to be drilled in the 基板 substrate. For example, assume that holes 212, 214, 216, 218, 220, and 222 have the same diameter D1' and holes 209, 210 have the same diameter D2, which is greater than D1. For example, assume that the eight holes 209, 210, 212, 214, 216, 218, 220, and 222 are respectively referred to by the mirrors (temporarily 38A, 38B, 38C, 38D, 38E, 38F, 38G, and 38H, The eight separate sub-beams 41A, 41B, 41C, 41D, 41E, 41F, 41G, and 41H that are not shown) are drilled. The sub-beams 41A...41H are formed from the sub-beams 29A...29H, respectively. 17 201026417 As shown in FIG. 4A, processing unit 36 first drills hole 209 using a sub-beam 41A having a pulse energy El and a diameter D2. The mirror 38A guides the sub-beam. The through hole is drilled in layer 202 until it reaches an upper surface 208 of layer 204, at which point the processing unit stops drilling hole 209. As shown in Fig. 4B, unit 36 then drills hole 210 using a sub-beam 41B having a pulse energy of £7 and a constant diameter D2, and mirror 63B directs the sub-beam. The drilling continues until the upper surface 208 is reached, at which point the processing unit stops drilling the holes 210 and begins drilling the holes 212 and 214. Since the diameters of the holes 212 and 214 are small, the processing unit 36 simultaneously drills the two holes as shown in Fig. 4C. To drill the holes, the processing unit produces two sub-beams 41C, 41D each having an equal pulse energy of five two and a diameter D1. The five 2 series is a fraction of £7. Unit 36 directs the sub-beams to the different holes using two mirrors 38C and 38D. The processing unit typically produces the two sub-beams using the second mode of operation of the acousto-optic deflector 28 such that the pulse rates of the sub-beams are the same as the pulse rate of the beam 24. Alternatively, the two sub-beams can be generated by one or more of the methods described above with reference to the acousto-optic deflector 28. For example, the processing unit can operate the acousto-optic deflector 28 in the first mode and alternate between two different input frequencies. Thus, the two sub-beams 41C and 41D can each have equal pulse wave energy, but their pulse repetition rate is | of the pulse repetition rate of the beam 24. The drilling of the holes 212 and 214 continues until the surface 208 is reached for each of the holes. When the holes 212 and 214 reach the surface 208, the processing unit stops drilling the holes and begins drilling the holes 216 and 218 as shown in FIG. 4D. To drill holes 216 and 218, processing unit 36 produces two sub-beams 41E, 41F that are guided by two mirrors 38E, 38F. The method of generating the sub-beams is generally as described above for sub-beams 41C, 41D. The drilling of the holes 216 and 218 continues until the holes reach the surface 208 for each of the holes. When holes 216 and 218 reach surface 208, the processing unit stops drilling the holes and begins drilling holes 220 and 222, as shown in Figure 4E. To drill the φ holes 220 and 222, the processing unit 36 produces two sub-beams 41G, 41H which are guided by the two mirrors 38G, 38H. The method of generating the sub-beams is generally as described above for sub-beams 41C, 41D. The drilling of the holes 220 and 222 continues until the surface 208 is reached for each of the holes. At this point, layer 202 has been drilled for all eight holes in substrate 44B. As shown in FIG. 4F, the processing unit then begins drilling through holes 209 and 210 in layer 204. Since layer 204 is easier to drill than layer 202, processing unit 36 utilizes two φ sub-beams 41A and 41B to set the two sub-beams to have substantially equal pulse energy, which is less than five. The processing unit continues to drill the holes 209 and 210 until reaching an upper surface 224 of the layer 206, at which time the unit cuts the sub-beams 41A and 41B. After the holes 209 and 210 have been completed, as shown in Fig. 4G, the unit 36 can reposition the mirrors 38A and/or 38B, if desired, typically for drilling other areas of the substrate 44B in the future. Layer 204 is easier to drill than layer 202. Therefore, when drilling the holes 212, 214, 216, 19 201026417 218, 22 〇 and 222, the two holes are not grouped and divided into three groups while drilling the unit 36, usually three holes are grouped and divided into groups. The two groups drill holes at the same time.
如第4G圖中所示，單元36首先鑽製孔洞2i2、214及加。為 鑽製該等孔洞’該處理單元產生實f如上所述之三個子光束批、 4Π)及彻’但每-子光束具有一相等之脈波能㈣則為幻 之一分率。或者，該三個子光束可藉由上文參照聲光致偏器^所 述之-或更多其他方法產生，諸如藉由在三種不同輸人頻率之間 交替。本例中，該三個子光束41C、41D及41E可各自具有一大 致等於£7之一脈波能量，但其脈波重複率為光束24之脈波重複 率之i。 3 在孔洞212、il4及216已鑽製後，若有需要，單元36能重新 定位面鏡38C、38D及/或38E，用以鑽製基板44B之其他區域。As shown in Figure 4G, unit 36 first drills holes 2i2, 214 and adds. To drill the holes, the processing unit produces three sub-beams, as described above, and the fourth sub-beam, but each sub-beam has an equal pulse energy (four) which is a magical fraction. Alternatively, the three sub-beams may be generated by the above-described reference to the acousto-optic deflector - or other methods, such as by alternating between three different input frequencies. In this example, the three sub-beams 41C, 41D, and 41E may each have a pulse energy equal to or greater than £7, but the pulse repetition rate is i of the pulse repetition rate of the beam 24. 3 After the holes 212, il4, and 216 have been drilled, the unit 36 can reposition the mirrors 38C, 38D, and/or 38E to drill other areas of the substrate 44B, if desired.
如第4H圖中所示，單元36然後以與上文參照第4G圖所述製 程大致類似之方式鑽製孔洞218、22〇及222，該鑽製係利用子光 束41F、41G及41H實施，該等子光束之參數相比用於鑽製層2〇2 之子光束發生適宜的改變。在該等孔洞已鑽製後，若有需要，單 元36能重新定位面鏡38F、38G及/或38H，用以將來鑽製該基板 之其他區域。 第41圖顯示所有孔皆已鑽製之基板44B之最終狀態。 第5圖係為根據本發明一實施例之一流程圖250,顯示為鑽製基 板44而由處理單元36實施之步驟。該流程圖之步驟對應於上文 參照第3A-3I圖及第4A-4I圖所述之多個孔洞鑽製操作。 20 201026417 在-光束產生步驟252中，單元36操作雷射22，用以產生其脈 波具有-總能量扮J之一單一輸出光束24’如上文參照第i圖所 述。該脈波率通常固定不變。 在一光束劃分步驟254中，單元36施加射頻輸入至聲光致偏器 208，以便將該單一光束劃分為二個或更多子光東。該單—光束之 劃分在上文參照第3F圖及第4C圖以舉例方式闡述。如上所述， 相較於光束24之總能量价’該劃分可使該等子光束具有分率脈波 Φ 能量。 在一第一鑽製步驟256中，單元36定位反射該等子光束之面 鏡，使該等子光束同時鑽製相應多個孔洞之各部分，如上文參照 第3F及4C圖所述。 在一子光束改變步驟258中，該處理單元改變該等子光束，使 該等改變後之子光束至少其中之一與步驟254之脈波能量相比具 有一不同之分率脈波能量。 φ 在一第二鑽製步驟260中，單元36施加該（等）改變後之子光 束’用以繼續鑽製其各自之孔洞。該子光束之改變，舉例而言， 在上文參照第3G圖之闡述内容中以及參照第4G圖之闡述内容中 以舉例方式闡述。 通常’單元36視情況重複流程圖250中之全部或某些步驟，用 以鑽製一給定基板之所有孔洞。 應瞭解，上述實施例係以舉例方式引述，丰發明並不限於上文 中具體顯示及描述之内容而是，本發明之範圍包含熟習此項技術 21 201026417 者在閱讀上述說明中可能想到的且在先前技術中未曾披露的、上 述之各種不同特徵之各個組合及子組合以及其變化形式和修改形 式。 【圖式簡單說明】 自以上結合附圖對本發明實施例作出之詳細說明可更充分理解 本發明，在附圖中： 第1圖係為根據本發明一實施例之一多鑽孔系統之一簡化示意 圖； 第2A、2B及2C圖係為根據本發明一實施例之簡化示意圖，圖 解闡釋一聲光致偏器之不同操作模式； 第3A-3I圖係為根據本發明一實施例，在鑽製一第一基板之一 時間進程中不同階段之簡化示意圖； 第4A-4I圖係為根據本發明一實施例，在鑽製一第二基板之一 時間進程中不同階段之簡化示意圖；以及 第5圖係為根據本發明一實施例之一簡化示意圖，顯示由一處 理單元執行，其目的係為鑽製一基板之步驟。 【主要元件符號說明】 20 多鑽孔裝置 22雷射 24 單一光束（或光束） 24A、24B 光束 26 柱狀透鏡 28聲光致偏器 29 子卷束. 29A 、29B、29C、29D 子光束 22 201026417As shown in Figure 4H, unit 36 then drills holes 218, 22A and 222 in a manner substantially similar to that described above with reference to Figure 4G, which is implemented using sub-beams 41F, 41G and 41H, The parameters of the sub-beams are suitably changed compared to the sub-beams used to drill the layer 2〇2. After the holes have been drilled, the unit 36 can reposition the mirrors 38F, 38G and/or 38H for future drilling of other areas of the substrate, if desired. Figure 41 shows the final state of the substrate 44B in which all the holes have been drilled. Figure 5 is a flow chart 250, shown in accordance with an embodiment of the present invention, showing the steps performed by processing unit 36 for drilling substrate 44. The steps of the flow chart correspond to the plurality of hole drilling operations described above with reference to Figures 3A-3I and 4A-4I. 20 201026417 In the -beam generation step 252, unit 36 operates laser 22 to produce a single output beam 24' of its pulse having a total energy, as described above with reference to FIG. This pulse rate is usually fixed. In a beam splitting step 254, unit 36 applies a radio frequency input to acousto-optic deflector 208 to divide the single beam into two or more sub-lights. The division of the single-beam is exemplified above with reference to Figures 3F and 4C. As described above, this division allows the sub-beams to have a fractional pulse Φ energy compared to the total energy valence of the beam 24. In a first drilling step 256, unit 36 positions the mirrors that reflect the sub-beams such that the sub-beams simultaneously drill portions of the respective plurality of holes, as described above with reference to Figures 3F and 4C. In a sub-beam changing step 258, the processing unit changes the sub-beams such that at least one of the changed sub-beams has a different fractional pulse energy than the pulse energy of step 254. φ In a second drilling step 260, unit 36 applies the (altered) changed sub-beams ' to continue drilling their respective holes. The change of the sub-beams is exemplified, for example, in the context of the above description with reference to Figure 3G and with reference to the description of Figure 4G. Typically, unit 36 repeats all or some of the steps in flowchart 250 as needed to drill all of the holes in a given substrate. It should be understood that the above-described embodiments are cited by way of example, and the invention is not limited to the details shown and described herein, but the scope of the present invention includes those skilled in the art. Various combinations and sub-combinations of the various features described above, and variations and modifications thereof, which are not disclosed in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be more fully understood from the following detailed description of embodiments of the present invention, in which: FIG. 1 is one of the multi-drilling systems according to one embodiment of the present invention. 2A, 2B, and 2C are simplified schematic views illustrating a different mode of operation of an acoustic light deflector in accordance with an embodiment of the present invention; FIGS. 3A-3I are diagrams in accordance with an embodiment of the present invention, A simplified schematic diagram of drilling different stages of a first substrate in a time course; 4A-4I is a simplified schematic diagram of different stages in the process of drilling a second substrate in accordance with an embodiment of the invention; Figure 5 is a simplified schematic view of one embodiment of the invention, shown as being performed by a processing unit for the purpose of drilling a substrate. [Main component symbol description] 20 multi-drilling device 22 laser 24 single beam (or beam) 24A, 24B beam 26 cylindrical lens 28 acousto-optic deflector 29 sub-beam. 29A, 29B, 29C, 29D sub-beam 22 201026417
30 中繼透鏡 32第一組面鏡 33 子光束產生系統 34第二組面鏡 35 透鏡 36處理單元 38 面鏡 39光束路徑 41 子光束組 41A……41T子光束 42 工作臺 43安裝座 44 基板 44A基板 44B 基板 102第一層 104 第二層 106第三層 108 上表面 110, 112, 114, 116 孔洞 202 第一層 204第二層 206 第三層 208,224 上表面 209, 210, 212, 214, 216, 218, 220, 222 孔洞 Et 脈波能量 Ea, Eb, Ec, Ed 脈波能量 F1，F2頻率 αΐ, α2角度 Dl，D2直徑 為了圖式清晰起見，未見於第1圖中的元件符號32B及34B代 表為面鏡32及34之子面鏡，元件符號29E-29H代表由子光束29 所分離出之子光束，以及元件符號38A-38H代表面鏡38之子面鏡。 2330 relay lens 32 first group of mirrors 33 sub-beam generating system 34 second group of mirrors 35 lens 36 processing unit 38 mirror 39 beam path 41 sub-beam group 41A ... 41T sub-beam 42 table 43 mount 44 substrate 44A substrate 44B substrate 102 first layer 104 second layer 106 third layer 108 upper surface 110, 112, 114, 116 hole 202 first layer 204 second layer 206 third layer 208, 224 upper surface 209, 210, 212, 214, 216, 218, 220, 222 Hole Et pulse energy Ea, Eb, Ec, Ed Pulse energy F1, F2 frequency αΐ, α2 angle Dl, D2 diameter For the sake of clarity of the figure, the component symbol not shown in Fig. 1 32B and 34B represent sub-mirrors of mirrors 32 and 34, component symbols 29E-29H represent sub-beams separated by sub-beams 29, and component symbols 38A-38H represent sub-mirrors of mirrors 38. twenty three