TW201024335A - Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor - Google Patents

Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor Download PDF

Info

Publication number
TW201024335A
TW201024335A TW097149300A TW97149300A TW201024335A TW 201024335 A TW201024335 A TW 201024335A TW 097149300 A TW097149300 A TW 097149300A TW 97149300 A TW97149300 A TW 97149300A TW 201024335 A TW201024335 A TW 201024335A
Authority
TW
Taiwan
Prior art keywords
layer
collecting layer
electron
hole
conductive
Prior art date
Application number
TW097149300A
Other languages
Chinese (zh)
Other versions
TWI378114B (en
Inventor
Ten-Chin Wen
Tzung-Fang Guo
Original Assignee
Ten-Chin Wen
Tzung-Fang Guo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ten-Chin Wen, Tzung-Fang Guo filed Critical Ten-Chin Wen
Priority to TW097149300A priority Critical patent/TWI378114B/en
Publication of TW201024335A publication Critical patent/TW201024335A/en
Application granted granted Critical
Publication of TWI378114B publication Critical patent/TWI378114B/en

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

A structure of a hole-collecting layer made of sulfonated polyaniline derivative and an electron-collecting layer made of titanium dioxide and a manufacture method therefor are provided. The structure includes a conductive substrate, the electron-collecting layer, an active layer, and the hole-collecting layer. The conductive substrate is formed with a conductive layer on which the electron-collecting layer, the active layer and the hole-collecting layer are stacked in turn. The hole-collecting layer is a conductive polymer layer made of sulfonated polyaniline derivative selected from sulfonated poly(diphenylamine), sulfonated poly(triphenylamine), or copolymer thereof. The electron-collecting layer is titanium dioxide formed by titanium(IV) isoprooxide as a precursor of titanium dioxide.

Description

201024335 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種有機光電半導體元件之結構及其製造 方法,特別是關於-種以續酸化聚苯胺衍生物做為電洞收集層 及/或以二氧化欽做為電子收集層之結構及其製造方法。 【先前技術】 近年來,因為石化燃料大量的被消耗,使得各種再生性能 源(例如太陽能電池、燃料電池、風力發電)的發展逐漸受到重 視。舉例而言,有機高分子太陽能電池(organic p〇lymer sdar cell)是一種成本低廉、製造容易之再生性能源,此種太陽能電 池之系統常用的吸光層材料為聚(3_己烷基噻吩) (poly(3-hexylthiohene),以下簡稱為P3HT)與碳六十衍生物 ((6,6)-笨基碳六十一丁酸甲酯,(6,6>phenyl C6i butyde add methyl ester’以下簡稱為PCBM)的共軛性高分子混摻系統, 近來利用退火儘量讓兩分子之間形成較佳之異質界面結構,若 以現今國際間的標準來看,其光轉換效率大約可達4 。再 者’近來也有些紅外光的主動層材料被研發合成出來,所宣稱 的光轉換效率最高的可達5.5%。由於相關研究人員不斷的研 發改良’確實讓有機高分子太陽能電池的實用性逐漸提高,甚 至有機會取代無機的太陽能電池。 在傳統的有機高分子太陽能電池之異質接面結構中,太陽 能電池中的電子和電洞必須由陰、陽兩極導通,其中一電洞收 集層(hole-collecting layer,以下簡稱為HCL)侧之電極會選用 201024335 高功函數(work function)的金屬材料,而一電子收集層 (electron-collecting layer,以下簡稱為ECL)側之電極則需使; 低功函數的金屬材料。但是’低功函數的金屬往往容易受到空 氣中水蒸氣與氧氣的侵襲,而轉變成不導電之金屬氧化物,結 果自然大幅影響太陽能電池的效能及穩定性。 為了改善上述問題,一種具有反置型結構之有機高分子太 陽能電池即被提出,此反置型結構可避開使用低功函數的金 屬,並選擇咼穩定性的金屬做為電子收集層侧之電極。但是, 在反置型結構中’-電子收集層側之電極通常會使用銦錫氧化 物dT〇)玻璃。根據半導體物理學原理,IT〇玻璃與主動層的 PCBM能階差異過大,導致電子傳遞時會造成阻礙,以及電池 内部電子制對分離不平衡,可能造成元件内部的空間電荷效 應(space charge effect),進而影響其光轉換效率。 因此,相關研究人員不斷的研發改良具高穩定性的電子收 集層(ECL)之㈣’其巾許多材料係有關於氧化师㈣細 參 oxide ’ TiOJ與氧化鋅(zinc 〇xide,Zn〇)之金屬氧化物,其可用 以修飾ITO玻璃的功函數並且具有良好的電子傳導特性及高 穩疋性。然而,以氧化鈦為例,其水溶性甚低,僅能懸浮在水 中。在製程上通常是先將氧化鈦之懸浮液塗佈在ITO玻璃表 面’接著再以燒結的方式蒸發水份,以留下氧化欽形成薄膜, 但是此種製程製造出的氧化鈦薄膜具有過大之表面粗縫度,其 平坦度過於低落。再者,近來亦有相關研究使用碳酸絶㈣ium C3rb〇nate ’ Cs2C〇3)作為電子收集層’及使用氧化蛛anadium oxide ’ V2〇5)作為電洞收集層(HCL),如此可製作出約光轉 201024335 - 換效率的太陽能電池,但是碳酸鏠是吸水性很強的鹽類,或許 不是良好的穩定性材料。 另外,在電洞收集層(HCL)的部份,有些研究指出可以直 接使用尚功函數的金屬,例如金或銀等。但是,由於有機主動 層與金屬之間常常存在偶極效應,導致有界面的地方常會產生 能障(energy barrier)的問題。為克服上述問題,亦有相關研究 使用類金屬性質的導電性高分子做為電洞收集層,例如聚(乙 烯基二氧噻吩):聚(苯乙烯磺酸) • (P〇1y(3,4-e%lenedioxythiophene):poly(styrene sulfonate),以 下簡稱為PEDOT : PSS),其可用以改善有機層與金屬存在的 問題。 舉例而言,請參照第1圖所示,其揭示一種習用有機高分 子太陽能電池的結構,其包含一導電基板n、一電洞收集層 12、一主動層13及一電子收集層14,其中該導電基板n為 具有一銦錫氧化物層ln之透明玻璃,該電洞收集層12為 ❹ PEDOT * PSS的混摻系統,該主動層13為P3HT : PCBM的 共軛性尚分子混摻系統,及該電子收集層14為鈣與鋁之金屬 層。然而’該電洞收集層12是種低水溶性物質(即pED〇T:pSS 混摻系統),僅能懸浮在水中,且亦不溶於其他有機溶劑,故 其旋轉塗佈之薄膜製程不易進行。再者,由於太陽能電池之主 動層13往往是疏水性的材料(即p3HT : pcBM混摻系統),故 當進打旋轉塗佈製程製作該主動層13時,亦會遇到極性差異 過大導致不易在該電洞收集層12上形成高分子賴問題。 故,有必要提供一種有機光電半導體元件之結構及其製造 6 201024335 方法,以解決習知技術所存在的電子收集層(ECL)及電洞收集 層(HCL)之材料特性問題。 【發明内容】 本發明之主要目的在於提供一種以磺酸化聚苯胺衍生物做 為電洞收集層之結構,其係利用導電性高分子磺酸化聚二苯胺 (sulfonatedpoly(diphenylamine),以下簡稱為 SPDPA)或其他 相似之續酸化聚苯胺衍生物做為電洞收集層,其在水或極性有 機溶劑中具有較佳之溶解度,能改善濕式製程上有機層與金屬 的界面之間偶極矩導致的能障不相匹配的問題,因而有利於提 高電洞傳遞的效率。 本發明之次要目的在於提供一種以二氧化鈦做為電子收集 層之結構的製造方法,其係藉由先塗佈異丙氧基鈦 (Ti(OC3H7)4)溶膠再進行水解及加熱,以形成具有高平坦度 及高多孔性之二氧化鈦薄膜做為電子收集層,因而有利於確保 電子傳遞效率及提高元件穩定性。 本發明之另一目的在於提供一種以磺酸化聚苯胺衍生 物做為電洞收集層及以二氧化鈦做為電子收集層之結構或製 造方法,其利用績酸化聚苯胺衍生物做為電洞收集層, 及藉由異丙氧基鈦水解形成之二氧化鈦薄膜做為電子 收集層,其具有較佳之環境穩定性,能保護主動層免於 受到水氣或氧氣的破壞,因而有利於提高光轉換效率。 為達上述之目的,本發明提供一種以磺酸化聚苯胺衍 生物做為電洞收集層之結構,其包含一導電基板、一電子 201024335 - 收集層、一主動層及一電洞收集層,其中該導電基板具 有一導電層,該電子收集層、主動層及電洞收集層依序 堆疊在該導電基板之導電層上,且該電洞收集層至少包 含導電性高分子磺酸化聚苯胺衍生物,其選自磺酸化聚 二苯胺、磺酸化聚三苯胺或其共聚物。 另一方面,本發明提供一種以二氧化鈦做為電子收集 層之結構的製造方法’其令該結構包含~~'導電基板、-— 電子收集層、一主動層及一電洞收集層,該電子收集 鲁 層、主動層及電洞收集層依序堆疊在該導電基板之一導 電層上,且該電子收集層之製造方法包含下列步驟:提 供異丙氧基鈦之溶膠;將異丙氧基鈦之溶膠塗佈在該導 電基板上,使其水解轉換成二氧化鈦凝膠;以及,對該 導電基板上的二氧化鈦凝膠進行高溫加熱,以形成二氧 化鈦薄膜做為該電子收集層。 另-方面’本發明提供—種以猶化聚苯胺衍生物做 ® 為電洞收集層及以二氧化鈦做為電子收集層之結構,其包含 一導電基板、—電子收集層、—主動層及-電洞㈣ 層’其中該導電基板具有一導電層,該電子收集層、主 動層及電㈣制依序堆叠在該導電基板之導曰電声 上,該電洞收集層至少包含導電性高分子顧化聚笨^ 衍生物,而該電子㈣層係為異丙氧基鈦形成之二 氧化欽薄膜’該姐化聚料魅物選自顧化聚 胺、磺酸化聚三苯胺或其共聚物。 在本發明之—實施财’該導f基板顧自-透明 201024335 基板*該導電層為姻錫氧化物層.。 在本發明之一實施例中,該電子收集層之表面另形 成一高分子修飾層,其介於該電子收集層及主動層之 間。 在本發明之一實施例中,該高分子修飾層選自胺丙 烷基三曱氧基矽烷(APTMS)、N-三甲氧基矽烷基乙二胺 (EDAPTMS)或氯丙基三曱氧基矽烷(CPTMS)。 在本發明之一實施例中,該主動層選自聚(3-己烷基 嗟吩)(poly(3-hexylthiohene),P3HT)與碳六十衍生物 ((6,6)-苯基碳六·]--丁酸曱酯,(6,6)-phenyl C61 butyric acid methyl ester,PCBM )的共輛性高分子混摻 系統(即 P3HT : PCBM)。 在本發明之一實施例中,該結構另包含一金屬電極 層,其堆疊於該電洞收集層之一外表面上。 在本發明之一實施例中,該金屬電極層選自金層、 銀層或其組合。 在本發明之一實施例中,該結構係一反置型有機光 電半導體元件,其中該電子收集層、主動層及電洞收集 層依序堆疊在該導電基板之一下表面的導電層上。 在本發明之一實施例中,該結構係選自有機高分子 太陽能電池(polymer photovoltaic cell)、有機薄膜電晶 體(polymer thin film transistor,OTFT)或高分子發光二 極體(polymer light-emitting diode,PLED)。 201024335 【實施方式】 、特徵、優點能更 施例’並配合所附 為了讓本發明之上述及其他目的 明顯易僅,下文將特舉本發明較佳實 圖式,作詳細說明如下。201024335 VI. Description of the Invention: [Technical Field] The present invention relates to a structure of an organic optoelectronic semiconductor device and a method of fabricating the same, and more particularly to a polyacid anilide derivative as a hole collecting layer and/or The structure of the electron collecting layer and the manufacturing method thereof are used. [Prior Art] In recent years, development of various sources of regenerative performance (e.g., solar cells, fuel cells, wind power generation) has been increasingly emphasized because of the large consumption of fossil fuels. For example, an organic polymer solar cell (organic p〇lymer sdar cell) is a regenerative energy source that is inexpensive and easy to manufacture. The light absorbing layer material commonly used in such solar cell systems is poly(3-hexylthiophene). (poly(3-hexylthiohene), hereinafter abbreviated as P3HT) and carbon sixty derivative ((6,6)-stupyl carbon hexadecanoate methyl ester, (6,6> phenyl C6i butyde add methyl ester' A conjugated polymer blending system referred to as PCBM) has recently been used to maximize the formation of a heterogeneous interfacial structure between two molecules. If the current international standard is used, the light conversion efficiency is about 4%. Recently, some infrared light active layer materials have been developed and synthesized, and the highest light conversion efficiency is claimed to be 5.5%. Due to the continuous research and development of relevant researchers, 'the practicality of organic polymer solar cells is gradually improved. Even have the opportunity to replace inorganic solar cells. In the heterojunction structure of traditional organic polymer solar cells, the electrons and holes in solar cells must be both yin and yang. Conduction, one of the holes on the hole-collecting layer (HCL) side will use the 201024335 high-work function metal material, and an electron-collecting layer (hereinafter referred to as The electrode on the side of the ECL) needs to be a metal material with a low work function. However, the metal with a low work function is often susceptible to attack by water vapor and oxygen in the air, and is converted into a non-conductive metal oxide, which naturally affects the solar energy. Battery performance and stability. In order to improve the above problems, an organic polymer solar cell with a reverse structure is proposed. This inverted structure can avoid the use of a metal with a low work function and select a stable metal as a Electrode on the side of the electron collecting layer. However, in the inverted structure, the electrode on the side of the electron collecting layer usually uses indium tin oxide dT. According to the principle of semiconductor physics, the PCBM energy level difference between the IT glass and the active layer is too large, which causes obstacles in electron transfer, and the separation of the internal electrons in the battery is unbalanced, which may cause a space charge effect inside the device. , which in turn affects its light conversion efficiency. Therefore, the researchers have continuously developed and improved the highly stable electron-collecting layer (ECL). (4) Many of the materials in the towel are related to the oxidationist (4) fines oxide ' TiOJ and zinc oxide (zinc 〇xide, Zn〇). A metal oxide which can be used to modify the work function of ITO glass and has good electron conduction characteristics and high stability. However, in the case of titanium oxide, its water solubility is very low and it can only be suspended in water. In the process, the suspension of titanium oxide is usually coated on the surface of the ITO glass, and then the water is evaporated in a sintered manner to leave a film of oxide, but the titanium oxide film produced by such a process is too large. The surface has a rough degree and its flatness is too low. Furthermore, recent studies have also used carbon tetrazolium (III) ium C3rb〇nate 'Cs2C〇3) as an electron-collecting layer' and oxidized anadium oxide 'V2〇5' as a hole collecting layer (HCL). Light to 201024335 - Solar cells with improved efficiency, but barium carbonate is a highly water-absorbing salt, perhaps not a good stability material. In addition, in the part of the hole collection layer (HCL), some studies have pointed out that metals such as gold or silver can be used directly. However, due to the often dipole effect between the organic active layer and the metal, there is often the problem of an energy barrier where there is an interface. In order to overcome the above problems, there have also been related studies using a metal-like conductive polymer as a hole collecting layer, such as poly(vinyldioxythiophene): poly(styrenesulfonic acid) • (P〇1y(3, 4-e%lenedioxythiophene): poly(styrene sulfonate), hereinafter referred to as PEDOT: PSS), which can be used to improve the problems of the organic layer and the metal. For example, please refer to FIG. 1 , which discloses a structure of a conventional organic polymer solar cell including a conductive substrate n , a hole collecting layer 12 , an active layer 13 and an electron collecting layer 14 . The conductive substrate n is a transparent glass having an indium tin oxide layer ln, the hole collecting layer 12 is a hybrid system of ❹ PEDOT * PSS, and the active layer 13 is a conjugated molecular hybrid system of P3HT : PCBM And the electron collecting layer 14 is a metal layer of calcium and aluminum. However, the hole collecting layer 12 is a low-water-soluble substance (ie, pED〇T:pSS mixing system), which can only be suspended in water and is insoluble in other organic solvents, so that the spin-coated film process is difficult to perform. . Furthermore, since the active layer 13 of the solar cell is often a hydrophobic material (ie, a p3HT: pcBM mixing system), when the active layer 13 is formed by a spin coating process, the polarity difference is too large to be easily formed. A polymer matrix problem is formed on the hole collecting layer 12. Therefore, it is necessary to provide a structure of an organic optoelectronic semiconductor device and its manufacture 6 201024335 method to solve the problem of material characteristics of an electron collecting layer (ECL) and a hole collecting layer (HCL) existing in the prior art. SUMMARY OF THE INVENTION The main object of the present invention is to provide a structure in which a sulfonated polyaniline derivative is used as a hole collecting layer, which is a sulfonated poly(diphenylamine), hereinafter referred to as SPDPA. Or other similar polyacidified polyaniline derivatives as a hole collection layer, which has better solubility in water or polar organic solvents, which can improve the dipole moment between the organic layer and the metal interface on the wet process. The problem that the energy barrier is not matched is beneficial to improve the efficiency of hole transmission. A secondary object of the present invention is to provide a method for fabricating a structure in which titanium dioxide is used as an electron collecting layer by first coating a titanium isopropoxide (Ti(OC3H7)4) sol, followed by hydrolysis and heating to form A titanium dioxide film having high flatness and high porosity serves as an electron collecting layer, thereby facilitating electron transfer efficiency and improving element stability. Another object of the present invention is to provide a structure or a manufacturing method using a sulfonated polyaniline derivative as a hole collecting layer and titanium dioxide as an electron collecting layer, which uses a polyaniline derivative as a hole collecting layer. And a titanium dioxide film formed by hydrolysis of titanium isopropoxide as an electron collecting layer, which has better environmental stability and can protect the active layer from moisture or oxygen, thereby facilitating improvement of light conversion efficiency. In order to achieve the above object, the present invention provides a structure in which a sulfonated polyaniline derivative is used as a hole collecting layer, comprising a conductive substrate, an electron 201024335 - a collecting layer, an active layer and a hole collecting layer, wherein The conductive substrate has a conductive layer, and the electron collecting layer, the active layer and the hole collecting layer are sequentially stacked on the conductive layer of the conductive substrate, and the hole collecting layer comprises at least a conductive polymer sulfonated polyaniline derivative. It is selected from the group consisting of sulfonated polydiphenylamine, sulfonated polytriphenylamine or a copolymer thereof. In another aspect, the present invention provides a method of fabricating a structure in which titanium dioxide is used as an electron collecting layer, which comprises a conductive substrate, an electron collecting layer, an active layer, and a hole collecting layer. The collecting layer, the active layer and the hole collecting layer are sequentially stacked on one conductive layer of the conductive substrate, and the method for manufacturing the electron collecting layer comprises the steps of: providing a sol of titanium isopropoxide; A titanium sol is coated on the conductive substrate to be hydrolyzed into a titania gel; and the titanium dioxide gel on the conductive substrate is heated at a high temperature to form a titanium oxide film as the electron collecting layer. In another aspect, the present invention provides a structure in which a polyaniline derivative is used as a hole collecting layer and titanium dioxide is used as an electron collecting layer, which comprises a conductive substrate, an electron collecting layer, an active layer, and The hole (four) layer 'where the conductive substrate has a conductive layer, the electron collecting layer, the active layer and the electric (4) are sequentially stacked on the conductive sound of the conductive substrate, the hole collecting layer containing at least the conductive polymer顾化聚笨^ derivative, and the electron (four) layer is a oxidized zirconia film formed of titanium isopropoxide. The scented scented material is selected from the group consisting of polyamine, sulfonated polytriphenylamine or a copolymer thereof. . In the present invention, the implementation of the f substrate is self-transparent 201024335 substrate * the conductive layer is a tin oxide layer. In one embodiment of the invention, the surface of the electron collecting layer is further formed with a polymer modifying layer interposed between the electron collecting layer and the active layer. In one embodiment of the invention, the polymeric modification layer is selected from the group consisting of amine propane trimethoxy decane (APTMS), N-trimethoxydecyl ethylene diamine (EDAPTMS) or chloropropyl tridecyl decane. (CPTMS). In one embodiment of the invention, the active layer is selected from the group consisting of poly(3-hexylthiohene), P3HT, and a carbon sixty derivative ((6,6)-phenyl carbon). A composite polymer blending system (ie, P3HT: PCBM) of hexammonium butyrate, (6,6)-phenyl C61 butyric acid methyl ester (PCBM). In one embodiment of the invention, the structure further includes a metal electrode layer stacked on an outer surface of one of the hole collecting layers. In an embodiment of the invention, the metal electrode layer is selected from the group consisting of a gold layer, a silver layer, or a combination thereof. In one embodiment of the invention, the structure is an inverted type organic optoelectronic semiconductor device, wherein the electron collecting layer, the active layer, and the hole collecting layer are sequentially stacked on the conductive layer on the lower surface of one of the conductive substrates. In an embodiment of the invention, the structure is selected from the group consisting of a polymer photovoltaic cell, a polymer thin film transistor (OTFT), or a polymer light-emitting diode (polymer light-emitting diode). , PLED). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention and other objects of the present invention will be apparent from the following detailed description.

請參照第2圖所示’本發明較佳實施例之以確酸化聚苯胺 衍生物做為制絲層及以二氧化鈦做為電子收制之結構 主要包含:-導電基板2卜-電子收集層22、一主動層^、 -電洞收集層24及-金屬電極層25,其中該導電基板021之 -下表面具有-導電層21卜該電子收集層22、主動層^、 電洞收集層24及金屬電極層25依序堆疊在該導電基板21之 下表面的導電層211上。在本發财,該導電層2ιι較佳選自 銦錫氧化物(ITO)層;該電洞收集層μ至少包含導電性高分子 項酸化聚苯贿生物,·雜化聚二苯胺(suiwed P〇_Phenylamine),以下簡稱為SPDPA)、磺酸化聚三苯胺 (sulfonatedpoly(triphenylamine) ’ 以下簡稱為 SPTPA)或其共 聚物;及該電子收集層22係為利用異丙氧基鈦(Ti(〇C3H7)4) 形成之二氧化鈦薄膜。本發明將於下文配合所附圖式進一步詳 細說明上述結構及其製造方法。 睛參照第2圖所示’本發明較佳實施例之以續酸化聚苯胺 衍生物做為電洞收集層及以二氧化鈦做為電子收集層之結構 係以使用磺酸化聚二苯胺(SPDPA)做為該電洞收集層24為 例,其中磺酸化聚二苯胺較佳係由下列方式進行製備·· 首先’準備下列樂劑:二苯胺(diphenyiamine,簡稱為DPA, 201024335 * 碰融—公司製)’其用以做為單體;過硫酸銨(ammonium peroxydisulfate ’簡稱為aps,公司製),其用以做為 氧化劑;濃硫酸(sulfiiric acid,即 H2S04,Riedel-deHagn 公司 製),其用以做為溶劑與摻雜物付叩㈣;丙酮(acet〇ne, Riedel-deHaSn公司製)’其用以做為助溶劑與清洗劑;氨水 (ammonia ’ Fluka公司製),其用以做為去摻雜劑;乙醇(ethan〇1, Riedel-deHa&i公司製),其用以做為還原劑與產物的溶劑;及 發煙硫酸(fUming sulfUnic acid,Riedel-deHagn 公司製),其用 鲁 以做為高分子磺酸化藥劑。再者,在另一實施例中,若使用磺 酸化I二苯胺(SPTPA)做為該電洞收集層24時’則需將二苯胺 (DPA)置換為三苯胺(triphenylamine,TPA),以進行下列合成步 驟。在又一實施例中,若使用磺酸化聚二苯胺(SPDPA)及磺酸 化聚三苯胺(SPTPA)之共聚物做為該電洞收集層24時,則需同 時準備適當混合比例之二苯胺(DPA)及三苯胺(TPA),以進行下 列合成步驟。 參 接著’進行聚二苯胺(poly(diphenylamine),以下簡稱為 PDPA)的合成.將DPA3.4公克(g),0.04莫耳(mole)放入1〇〇〇 毫升(ml)的圓底夾套式反應器中持續旋轉攪拌,並加入2莫耳 濃度(M)的硫酸水溶液3〇〇ml與丙酮200ml作高分子聚合的溶 劑’此反應需在5°C的環境進行。然後,緩慢滴入含有氧化劑 APS (4.5g,0.04 mole)的2M硫酸水溶液30ml。當聚合反應開 始發生時,會發現溶液顏色由透明無色轉為綠色,總反應時間 16個小時。當反應終止時會有綠色沉澱物析出,利用抽氣過 濾的方式收集沉澱物’將沉澱物用去離子水大量洗淨直到過遽 11 201024335 器底層的液體沒有任何顏色’此時收集到有硫酸根離子當摻雜 物的聚二苯胺(PDPA),並需要使用1當量濃度⑼的氨水水溶 液進行中和反應(neutralization)去摻雜硫酸根離子,去摻雜時 間至少需要24個小時。之後,利用抽氣過濾的方式並使用大 量的去離子水將多餘的氨水水溶液洗淨,形成中性狀態的 PDPA。接著,將中性態PDPA溶於乙醇中攪拌至少12個小時 還原PDPA,其後以大量的乙醇清洗PDPA再利用離心沉澱的Referring to FIG. 2, the structure of the present invention is characterized in that the acidified polyaniline derivative is used as a silk layer and the titanium dioxide is used as an electronic structure. The main structure comprises: - a conductive substrate 2 - an electron collecting layer 22 An active layer, a hole collecting layer 24, and a metal electrode layer 25, wherein the lower surface of the conductive substrate 021 has a conductive layer 21, the electron collecting layer 22, an active layer, and a hole collecting layer 24 The metal electrode layer 25 is sequentially stacked on the conductive layer 211 on the lower surface of the conductive substrate 21. In the present invention, the conductive layer 2 ι is preferably selected from the group consisting of an indium tin oxide (ITO) layer; the hole collecting layer μ contains at least a conductive polymerized acidified polyphenylene bismuth, and a hybrid polydiphenylamine (suiwed P) 〇_Phenylamine), hereinafter referred to as SPDPA), sulfonated poly(triphenylamine ' hereinafter referred to as SPTPA) or a copolymer thereof; and the electron collecting layer 22 is made of titanium isopropoxide (Ti(〇) C3H7) 4) A titanium dioxide film formed. The above structure and its manufacturing method will be further described in detail below with reference to the accompanying drawings. Referring to Figure 2, the preferred embodiment of the present invention uses a polyacidified polyaniline derivative as a hole collecting layer and a structure in which titanium dioxide is used as an electron collecting layer to use sulfonated polydiphenylamine (SPDPA). For the hole collecting layer 24, for example, the sulfonated polydiphenylamine is preferably prepared by the following methods: First, the following agents are prepared: diphenyiamine (referred to as DPA, 201024335 * 融融-company) 'It is used as a monomer; ammonium peroxydisulfate (abbreviated as aps, made by the company), which is used as an oxidizing agent; sulfiiric acid (H2S04, manufactured by Riedel-deHagn Co., Ltd.) As a solvent and a dopant (4); acetone (acetatene, manufactured by Riedel-deHaSn), which is used as a solvent and a cleaning agent; ammonia (ammonia 'Fluka), which is used as a a dopant; ethanol (ethan〇1, manufactured by Riedel-deHa & i), which is used as a solvent for reducing agents and products; and fuming sulfuric acid (fUming sulfUnic acid, manufactured by Riedel-deHagn Co., Ltd.) Polymer sulfonic acid Pharmacy. Furthermore, in another embodiment, if sulfonated diphenylamine (SPTPA) is used as the hole collecting layer 24, it is necessary to replace diphenylamine (DPA) with triphenylamine (TPA). The following synthetic steps. In still another embodiment, if a copolymer of sulfonated polydiphenylamine (SPDPA) and sulfonated polytriphenylamine (SPTPA) is used as the hole collecting layer 24, it is necessary to simultaneously prepare a proper mixing ratio of diphenylamine ( DPA) and triphenylamine (TPA) were used to carry out the following synthetic steps. Followed by 'poly(diphenylamine, hereinafter referred to as PDPA) synthesis. DPA3.4 g (g), 0.04 mole (mole) into a 1 ml (ml) round bottom clip The mixture was continuously stirred and stirred in a reactor, and 3 ml of a 2 mol concentration (M) aqueous sulfuric acid solution and 200 ml of acetone were added as a solvent for polymer polymerization. This reaction was carried out at 5 ° C. Then, 30 ml of a 2 M aqueous sulfuric acid solution containing an oxidizing agent APS (4.5 g, 0.04 mole) was slowly added dropwise. When the polymerization started, the color of the solution was changed from transparent and colorless to green, and the total reaction time was 16 hours. When the reaction is terminated, green precipitates are precipitated, and the precipitate is collected by suction filtration. The precipitate is washed with deionized water in a large amount until it passes through the water. The liquid at the bottom of the unit is not colored. The root ion is a polydiphenylamine (PDPA) of the dopant and requires a neutralization of 1 equivalent of (9) aqueous ammonia solution to dope the sulfate ion, and the dedoping time takes at least 24 hours. Thereafter, the excess aqueous ammonia solution is washed by means of suction filtration and using a large amount of deionized water to form a PDPA in a neutral state. Next, the neutral PDPA is dissolved in ethanol and stirred for at least 12 hours to reduce PDPA, after which the PDPA is washed with a large amount of ethanol and then centrifuged.

方式收集PDPA,經過數次的清洗純化洗出離子與低分子量的 养聚物’將其放入真空烘箱中乾燥24個小時,此時可以得到 灰白色的PDPA。 接著,進行續酸化聚二苯胺(SPDPA)的合成:將純化s 後的PDPA 0.5g放入80 ml發煙硫酸當中進行續酸化反” (sulfonation) ’此時反應器溫度需控制在穴的環境進行避免^ 應過快的情形。此磺酸化步驟的整體時間約〗個小時,反應^ 成後將其放人原先預冷好的丙,讓沉雜質析出,再利月 離心過_对將峨魏#,其複_大量_洗條泛 殿物與離心過濾,以將多餘的硫酸與鮮洗淨。最後,將丙趣 溶劑去除,即可得職物,之後再使㈣濾財切不溶於^ 之物質與主要雜分卿可得躲終產物spDpA。再者,^ 將SPDPA溶於乙醇中,以便塗佈形成·Α薄膜做為該電泪The PDPA was collected by washing and purifying the ions and the low molecular weight polymer after several times of cleaning. It was dried in a vacuum oven for 24 hours, at which time an off-white PDPA was obtained. Next, the synthesis of polyacidified polyaniline (SPDPA) is carried out: 0.5 g of PDPA after purification s is placed in 80 ml of fuming sulfuric acid to carry out acidification sulfonation. At this time, the reactor temperature needs to be controlled in the environment of the cavity. The situation of avoiding ^ should be too fast. The overall time of this sulfonation step is about 〖hours, after the reaction is completed, it is put into the original pre-cooled C, so that the precipitated impurities are precipitated, and then the centrifugation is carried out. Wei #, its complex _ a large number of _ wash strips and centrifugal filtration, in order to remove excess sulfuric acid and fresh washed. Finally, the solvent is removed, you can get the job, and then make (four) filter insoluble ^ The substance and the main miscellaneous secretary can get the end product spDpA. Further, ^ Dissolve SPDPA in ethanol to form the film to form the tear.

收集層24’其重量百分濃度為1%<>SpDpA合成的化學結 係如下列方程式所示: J 12 201024335The collection layer 24' has a weight percent concentration of 1% <> The chemical structure of the SpDpA synthesis is as shown in the following equation: J 12 201024335

❹ 請縣照第2 ,本發雜佳實施狀叫酸化聚苯 胺衍生物做為電、騎集層及以二氧化鈦做為電子收集層之結 構係採用♦膠·凝膠法(sd_gel pr_s)並湘異丙氧基欽 (Ti(OC3H7)4)做為前趨物㈣_〇r),以形成二氧化欽薄膜做 為該電子收集層22,其中該電子收集層a之製造方法包含下 列轉··提供細氧基狀轉;職丙氧絲之雜塗佈在 該導電基板21上,使其水解轉換成二氧化鈦凝膠;以及,對 吞導電土板21上的一氧化鈦凝膠進行高溫加熱,以形成二氧 化鈦薄膜做為該電子收集層22。 13 201024335 首先’在提供異丙氧基欽之溶谬時,取適量之異丙醇 (isopropyl alcohol,亦即IPA),進一步以異丙氧基欽:異丙醇 =1 : 1.5的比例加入異丙氧基鈦(titanium is〇pr〇〇xide,亦即 11(0(¾¾)4 ’ Aldrich公司製,純度99.999 %),並加以攪拌至 均勻。此溶液即為異丙氧基鈦之溶膠。本發明並不限制上述藥 劑的使用比例,其係可依實際需求量或製程條件加以改變。 接著,在將異丙氧基鈦之溶膠塗佈在該導電基板21之前, 本發明較佳係預先進行清洗該導電基板21之導電層2n,其 係利用清潔劑、去離子水、丙酮和異丙醇逐一洗濯並配合超音 波振動洗淨,然後再將該導電基板21之導電層211利用紫外 線臭氧(UVQ)處裡的方式清轉表面的械㈣。在清洗後, 本發明較佳利用旋轉塗佈(spin c〇ating)等方式將異丙氧基鈦之 溶膠塗佈在該導電基板21之導電層211上,其旋轉的第一階 段轉數為1000 rpm持續5秒,與第二階段4〇〇〇啊持績 秒’此膜厚度大小為80奈米(nm);為了讓膜厚更薄,亦可將 操作條件設為5_rpm觸6〇秒。之後,再有異丙氧基 鈦溶膠薄賴導電基板21放到空氣下水解至少i個小時,使 其轉化形成二氧化鈦(Ti〇2)或其他氧化鈦型式(Ti〇⑽凝膠薄 膜。 最後’對該導電基板21上的二氧化鈦凝膠薄膜進行4耽 的局溫加熱進行燒結i個小時(或—I燒結Μ分鐘),以形成 =氧化鈦親做為該電子收㈣22。相較於_般製程僅 是將二氧化鈦之懸浮液塗佈在IT〇玻璃表面再以燒結方式形 成氧化鈦薄膜’本發明藉由先塗伟二氧化鈦前驅物(異丙氧基 14 201024335 鈦)再經水解及騎的餘更能碱高平坦度及高乡孔性之二 氧化鈦薄膜做為該電子收集層22。 言月再參,系第2圖所示’本發明較佳實施例之以續酸化聚苯 胺衍生物做為電洞收集層及以二氧化鈦做為電子收集層之結 #的製U方法係以有機高分子太陽能電池為例詳細說明如 下·本發明之有機高分子太陽能電池的分層結構包含該導電基 板21、電子收集層22、主動層23、電洞收集層24及金屬電 φ 極層25,在本實施例中,該分層結構即為:ITO玻璃 m〇2/P3HT : PCBM/sPDPA/Au+Ag,其中該導電基板21 為一 透明基板,其可選自玻璃或可撓性塑性板等,其中可撓性塑性 板可選自聚亞醯胺(polyimide)板或壓克力板等,但並不限於 此。該導電基板21之導電層211較佳為銦錫氧化物(IT〇)層, 該銦錫氧化物層即用以做為該電子收集層22侧之電極。在塗 佈形成一氧化鈦薄膜之前’較佳先清洗ΓΓΟ玻璃的銦錫氧化物 層之表面’其清洗過程及塗佈過程可參照上述關於該電子收集 ❹ 層22之製造方法的段落所述’於此不再另予贅述。該二氧化 欽薄膜之厚度約為80奈米(nm)。再者,在另一實施例中,該 一氧化鈇薄膜之表面亦可額外形成一高分子修飾層(未緣示, 例如選自胺丙烷基三曱氧基矽烷APTMS、N-三曱氧基石夕烧基 乙二胺EDAPTMS或氯丙基三甲氧基矽烷CPTMS,統稱為 SAM高分子修飾層),使其介於該二氧化鈦薄膜及後續形成之 主動層23之間,以提高兩者之間的界面結合強度及電子傳遞 效率。在本發明之一實施例中’可將已具有二氧化鈦薄膜的 ITO玻璃浸泡至所配好的SAM溶液裡’該SAM溶液可選自3 15 201024335 種不同官能基的三曱氧基石夕烧(trimethoxysilane),分別是胺丙 烧基三曱氧基石夕炫(3-amniopropiyltrimethoxysilane,APTMS)、 N- 三甲氧基矽烷基乙二胺 (N-[3-(Trimethoxysilyl)propyl]ethylenediamine,EDAPTMS)或 氣丙基二甲氧基砍烧(3-chloropropryltrimethoxysilane, CPTMS) ’配置條件為lwt% ’選用的溶劑為甲苯(t〇iuene),浸 泡後以超音波震盪的方式震盪2分鐘,取出後再以純的曱苯溶 劑作清洗動作,將未鍵結分子去除,機制如下:❹ Please take the county photo 2, this is a good implementation of the acidified polyaniline derivative as electricity, riding the layer and the structure of the use of titanium dioxide as an electron collection layer using ♦ glue · gel method (sd_gel pr_s) and Xiang Isopropoxy oxime (Ti(OC3H7)4) is used as a precursor (tetra)_〇r) to form a dioxide film as the electron collection layer 22, wherein the method for producing the electron collection layer a comprises the following Providing a fine oxy-transformation; the miscellaneous propane filament is coated on the conductive substrate 21 to be hydrolyzed and converted into a titania gel; and the titanium oxide gel on the conductive soil plate 21 is heated at a high temperature. The titanium oxide film is formed as the electron collecting layer 22. 13 201024335 First of all, when providing the solution of isopropoxy oxime, take an appropriate amount of isopropyl alcohol (IPA), and further add isopropoxyl:isopropanol = 1:1.5 Titanium is 〇pr〇〇xide, which is 11 (0 (3⁄43⁄4) 4 'Aldrich, purity 99.999 %), and stirred until homogeneous. This solution is a sol of titanium isopropoxide. The present invention does not limit the ratio of use of the above-mentioned agents, which may be changed according to actual requirements or process conditions. Next, before coating the sol of titanium isopropoxide on the conductive substrate 21, the present invention is preferably in advance. The conductive layer 2n for cleaning the conductive substrate 21 is washed one by one with a detergent, deionized water, acetone, and isopropyl alcohol, and washed with ultrasonic vibration, and then the conductive layer 211 of the conductive substrate 21 is made to utilize ultraviolet ozone. The method of (UVQ) clears the surface of the machine (4). After cleaning, the present invention preferably coats the sol of titanium isopropoxide on the conductive substrate 21 by means of spin coating or the like. The first stage of rotation on the conductive layer 211 The number of revolutions is 1000 rpm for 5 seconds, and the second stage is 4 seconds. The film thickness is 80 nm (nm); in order to make the film thickness thinner, the operating conditions can also be set to 5 rpm. 6 sec. After that, the titanium isopropoxide sol is further thinned on the conductive substrate 21 and allowed to hydrolyze for at least i hours to convert it into titanium dioxide (Ti〇2) or other titanium oxide type (Ti〇(10) gel. Finally, the titanium dioxide gel film on the conductive substrate 21 is subjected to local temperature heating of 4 Torr for sintering for 1 hour (or -I sintering Μ minute) to form = titanium oxide as the electron (4) 22 phase. Compared with the conventional process, only the suspension of titanium dioxide is coated on the surface of the IT glass and then the titanium oxide film is formed by sintering. The present invention is hydrolyzed by the first coating of titanium dioxide precursor (isopropoxy 14 201024335 titanium). And the titanium dioxide film having high alkalinity and high porosity of the base is used as the electron collecting layer 22. As shown in Fig. 2, the preferred embodiment of the present invention is a polyacidified polyaniline. The derivative acts as a hole collecting layer and uses titanium dioxide as an electron collection The U method of the layer is made of an organic polymer solar cell as an example. The layered structure of the organic polymer solar cell of the present invention includes the conductive substrate 21, the electron collecting layer 22, the active layer 23, and the hole. In the present embodiment, the layered structure is: ITO glass m〇2/P3HT: PCBM/sPDPA/Au+Ag, wherein the conductive substrate 21 is a transparent substrate. It may be selected from glass or a flexible plastic plate or the like, wherein the flexible plastic plate may be selected from a polyimide plate or an acrylic plate or the like, but is not limited thereto. The conductive layer 211 of the conductive substrate 21 is preferably an indium tin oxide (IT〇) layer, which is used as an electrode on the electron collecting layer 22 side. The surface of the indium tin oxide layer of the bismuth glass is preferably cleaned before the formation of the titanium oxide film. The cleaning process and the coating process can be referred to the above paragraph regarding the manufacturing method of the electron collecting layer 22. This will not be repeated here. The thickness of the dioxide film is about 80 nanometers (nm). Furthermore, in another embodiment, the surface of the niobium monoxide film may additionally form a polymer modification layer (not shown, for example, selected from the group consisting of amine propane-based tridecyloxydecane APTMS, N-trimethoxylate). Ethylenediamine EDATMS or chloropropyltrimethoxydecane CPTMS, collectively referred to as a SAM polymer modification layer, is interposed between the titanium dioxide film and the subsequently formed active layer 23 to enhance the Interface bonding strength and electron transfer efficiency. In one embodiment of the present invention, an ITO glass having a titanium oxide film can be immersed in a prepared SAM solution. The SAM solution can be selected from 3 15 201024335 different functional groups of trimethoxysilane. ), respectively, 3-amniopropiyltrimethoxysilane (APTMS), N-[3-(Trimethoxysilyl)propyl]ethylenediamine (EDAPTMS) or aerobic 3-chloropropryltrimethoxysilane (CPTMS) 'The condition is lwt%' The solvent selected is toluene (t〇iuene), soaked and vortexed for 2 minutes in a sonic wave, and then taken out and then purely 曱The benzene solvent acts as a cleaning action to remove unbonded molecules. The mechanism is as follows:

2=Si—OMe Ί- 2Η2〇^·2=Si—OH+2MeOH = Si—OH+HO—Si=—^ = Si—〇—Si= +H2O 當本發明以胺丙烷基三曱氧基矽烧(APTMS)或N-三甲氧 基矽烷基乙二胺(EDAPTMS)為實施例時,其鍵結在IT〇玻璃 的二氧化鈦薄膜上之過程係分別如下述反應式所示:2=Si—OMe Ί- 2Η2〇^·2=Si—OH+2MeOH = Si—OH+HO—Si=—^ = Si—〇—Si= +H2O When the present invention is an amine propane-based tridecyloxy fluorene When the (APTMS) or N-trimethoxydecyl ethylenediamine (EDAPTMS) is used as an example, the processes of bonding to the titanium dioxide thin film of the IT glass are as shown in the following reaction formula:

在ΙΤΟ玻璃的銦錫氧化物層之表面形成二氧化欽薄膜(及 高分子修飾層)之後’以混合重量比1:1將聚$己烧基嗔吩) 16 201024335 • (P〇ly(3-hexylthiohene),P3HT)與碳六十衍生物((6,6)-phenyl C61 butyric acid methyl ester,PCBM)溶於鄰二氯苯中 ((1,2-dichlorobenzene),Aldrich 公司製)中,其重量百分濃 度為2%(對P3HT)。接著,將此共輛性高分子混摻系統(即 P3HT . PCBM)的混合液利用旋轉塗佈方式(轉速6〇〇 jpjQ持續 60秒)塗佈在該二氧化鈦薄膜之表面上後,並根據溶劑退火法 (solvent annealing)原理將該結構放置在一密閉容室(例如培養 皿)中利用飽和蒸氣壓減缓P3HT: PCBM薄臈中溶劑揮發的時 ® 間,促使P3HT : PCBM有次序的排列在該二氧化鈦薄膜之表 面上’直到溶劑完全揮發變乾為止,P3HT : PCBM薄膜的最 終厚度約為200奈米(mn)。接著,將磺酸化聚二苯胺 (SPDPA)(或磺酸化聚三苯胺或兩者之共聚物)利用旋轉塗佈的 方式(轉速5000 rpm持續60秒),其厚度約為1〇nm。最後,再 放入熱蒸錢機中’分別蒸鍍形成厚度約4〇nm的金層(Au)與厚 度約100 nm的銀層(Ag)當作電洞收集層24侧之電極。在完成 Φ 上述分層結構後,將其反置即為反置型有機高分子太陽能電池 的結構’其元件有效面積為〇.〇8平方公分(cm;2)。 请再參照第2圖所示,本發明較佳實施例之以續酸化聚苯 胺衍生物做為電洞收集層及以二氧化鈦做為電子收集層之結 構以上述有機高分子太陽能電池為例時,由於陽能電池是由數 百奈米的P-N接面所組成’因此對於各層薄膜的能階位置的控 制顯然是报重要的。因為IT0玻璃的銦錫氧化物層係屬於高功 函數的金屬氧化物’故使用在反置型有機光電半導體元件上時 較不利於電子轉遞,所以必織尋有·電子收集的修飾 17 201024335 層’另外ITO玻璃的銦錫氧化物層之表面粗_度也過大,容易 導致形成尖端放電的情況。為改#上述騎,本發明之電子收 集層22使用上述製舞成之二氧化鈦触,其中二氧化欽薄 膜的能階位置的量測十分重要。 請參照第3圖所#’其揭示本發明較佳實施例之ιτ〇玻璃 的錮錫氧化物層上之二氧化鈦薄膜的紫外光電子光譜圖 (ultraviolet Ph〇toelectron spectroscoPy,ups),其用以量測該二 φ 氧化鈦薄膜的導電帶(conduction band)與價電帶細_ band) 之能階值。由第3 @之電子光譜圖可看出該二氧化鈦薄膜之功 函數的位置,對於Ν·型半導_言,其功函數位置十分接近 導電帶,由截止(Cu_區域可以定義出導電帶之位置大約在 3·9電子伏(eV)的位置。 請參照第4 _示,其揭示本發β佳實施狀Ιτ〇玻璃 的銦錫氧化物層上之二氧化鈦薄_紫外歧收光譜圖 (UV-vis spectmm),其用以量測該二氧化欽薄膜的能隙細麵) Ο 值。由第4圖之吸收光譜圖可量測到該二氧化鈦薄膜的能隙大 小約為3·2 eV ’可換算出價電帶的位置在71…的位置,因此 該能帶位置可判絲銳鈦礦(anatase)型態的二氧化鈦。此外, 對於IT0玻璃之銦錫氧化物層的表面粗糙度而言,藉由二氧化 欽薄膜修飾銦錫氧化物層後,對該二氧化欽薄膜之表面粗糖度 另外進行原子力顯微鏡(at〇rnicforcemicrosc〇py,的表面 高低量測,其表面高低量測結果如第4圖右上角所示。由圖示 可知’原先ITO玻璃之銦職化物層的均方根粗縫度㈣)為 2.66nm,經二氧化鈦薄膜修飾後的均方根粗糙度(rms)為 18 201024335 0.97nm,因此可證明二氧化鈦薄膜確實較原先ITO玻璃之銦 錫氧化物層更為平坦化。 再者,二氧化鈦薄膜本身結構的分析也是十分重要,我們 藉由光電子光譜分析(X-ray photoelectron,XPS)得到之光譜圖 可算出異丙氧基鈇(Ti(OC3H7)4)轉化為二氧化鈥(Ti〇2)的結 構’O(is)對於Ti-0_Ti的鍵結能量位置為53〇.4eV而Ti-0-Χ(其 中X=C,H)之鍵結能量位置為531.9eV,換算出其轉換為Ti-〇_Ti 的比率為83.4 %。因此,由二氧化鈦薄膜的分析結果認為其確 實可有效的修飾IT0玻璃並做為有機高分子太陽能電池之電 子收集層22。 請參照第5圖所示,其揭示習用有機高分子太陽能電池 (ITO 玻璃/PEDOT: PSS/P3HT : PCBM/Ca+Al,如第 i 圖所示, 其曲線以□表示)及本發明之有機尚分子太陽能電池(ιτο玻璃 /Ti02/P3HT : PCBM/SPDPA/Au+Ag,如第 2 圖所示,其曲線 以▲表示’未含Ti〇2的曲線以♦表示)之電壓/電流密度統計 Φ 圖,並搭配第3及4圖進一步定義出本發明各層結構的能階位 置。如第5圖所示’習用有機1%分子太陽能電池的元件特性(□) 如下:開路電壓(open circuit voltage,Voc)為〇.6〇 v、短路電流 (short circuit current density,Jsc )為 9.43 mA/cm2、光轉換效率 (power conversion efficiency,PCE)為 3.74 %,及填充因子 factor,FF)為0.66。再者,當本發明之(反置型)有機高分子太 陽能電池中未用二氧化鈦薄膜修飾時,其分層結構為IT〇玻璃 / Ρ3ΗΤ:PCBM/SPDPA/Au+Ag ’ 其元件特性(♦)如下· v〇c ⑽ V、Jsc =0.74 mA/cm2、PCE =0.02 %,及 FF =0.25。相較之下 19 201024335 發現此元件的表現料理想,齡概發現主因有二·其 璃與主動層p3HT : pcBM之間的能障差異過大 函為4.7eV、PCBM的最低無佔據軌道能階(LUMO) …4.3eV) ’導致電子在傳遞時出現了阻礙;其二為HQ玻璃 之銦鍚氧⑽層秘面_度敬,峨於在魏當巾常會發 覺電池發生短路⑼麵)而纽呈現p_N接面 由此元件㈣=_過小即可得知。反觀,本發明藉由! 氧化欽薄膜修飾後的結構⑽^玻璃瓜&們町·· PCBM/Sm>A/Au+Ag)可觀察到電池的特性⑷有大幅改善, 其特 f生如下· V〇c =0.58 V、Jsc =10.46 mA/cm2、PCE =3.91 %,After forming a oxidized film (and a polymer modified layer) on the surface of the indium tin oxide layer of the bismuth glass, 'the hexanol porphin is mixed at a weight ratio of 1:1. 16 201024335 • (P〇ly(3) -hexylthiohene), P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) are dissolved in (1,2-dichlorobenzene, manufactured by Aldrich). Its weight percent concentration is 2% (for P3HT). Next, a mixture of the common polymer blending system (ie, P3HT. PCBM) is applied onto the surface of the titanium dioxide film by a spin coating method (rotation speed of 6 〇〇 jpjQ for 60 seconds), and according to the solvent. The principle of solvent annealing is to place the structure in a closed chamber (such as a petri dish) with a saturated vapor pressure to slow down the P3HT: solvent evaporation in the PCBM thinner, causing the P3HT: PCBM to be arranged in order. On the surface of the titanium dioxide film, the final thickness of the P3HT:PCBM film is about 200 nm (mn) until the solvent is completely evaporated. Next, the sulfonated polydiphenylamine (SPDPA) (or the sulfonated polytriphenylamine or a copolymer of the two) was spin-coated (rotation speed 5000 rpm for 60 seconds) to a thickness of about 1 〇 nm. Finally, it was placed in a hot steamer to form a gold layer (Au) having a thickness of about 4 Å and a silver layer (Ag) having a thickness of about 100 nm, respectively, as electrodes on the side of the hole collecting layer 24. After the Φ layer structure is completed, the reverse structure is the structure of the inverted type organic polymer solar cell, and the effective area of the element is 〇.〇8 square centimeters (cm; 2). Referring to FIG. 2 again, in the preferred embodiment of the present invention, the polyacidified polyaniline derivative is used as the hole collecting layer and the titanium dioxide is used as the electron collecting layer. Since the solar cell is composed of hundreds of nanometer PN junctions, it is obviously important to control the energy level position of each layer of film. Because the indium tin oxide layer of IT0 glass belongs to the high work function metal oxide, it is not conducive to electron transfer when it is used on the reverse type organic optoelectronic semiconductor device, so it must be etched and modified. 17 201024335 layer 'The surface roughness of the indium tin oxide layer of the ITO glass is also too large, which tends to cause the formation of tip discharge. In order to change the above-mentioned ride, the electron collecting layer 22 of the present invention uses the above-described titanium dioxide touch, and the measurement of the energy level position of the oxidized film is very important. Referring to FIG. 3, an ultraviolet photoelectron spectrum (ultraviolet Ph〇toelectron spectroscoPy, ups) of the titanium oxide film on the tantalum oxide layer of the ιτ〇 glass of the preferred embodiment of the present invention is disclosed. The energy level of the conduction band and the valence band of the two φ titanium oxide film. From the 3rd electronic spectrum, the position of the work function of the titanium dioxide film can be seen. For the Ν·type semiconductor, the work function position is very close to the conductive band, and the cut-off (Cu_ region can define the conductive band). The position is about 3. 9 electron volts (eV). Please refer to the 4th _, which reveals the thin TiO2 spectrum of the titanium dioxide on the indium tin oxide layer of the 佳τ〇 glass. -vis spectmm), which is used to measure the energy gap fine surface of the dioxide film. From the absorption spectrum of Fig. 4, the energy gap of the titanium dioxide film can be measured to be about 3·2 eV. The position of the biddable electric tape can be converted to the position of 71..., so the position of the band can be judged as anatase. (anatase) type of titanium dioxide. In addition, for the surface roughness of the indium tin oxide layer of the IT0 glass, after modifying the indium tin oxide layer by the oxidized film, the surface roughness of the dioxide film is additionally subjected to an atomic force microscope (at 〇rnicforcemicrosc). The surface height measurement of 〇py, the surface height measurement results are shown in the upper right corner of Figure 4. It can be seen from the figure that the root mean square roughness (4) of the indium oxide layer of the original ITO glass is 2.66 nm. The root mean square roughness (rms) after modification with the titanium dioxide film is 18 201024335 0.97 nm, so it can be confirmed that the titanium dioxide film is indeed flatter than the indium tin oxide layer of the original ITO glass. Furthermore, the analysis of the structure of the titanium dioxide film itself is also very important. We can calculate the conversion of isopropoxy iridium (Ti(OC3H7)4) to cerium oxide by spectrogram obtained by X-ray photoelectron (XPS). The structure of (Ti〇2) 'O(is) for the bonding energy position of Ti-0_Ti is 53〇.4eV and the bonding energy position of Ti-0-Χ (where X=C, H) is 531.9eV, The ratio of conversion to Ti-〇_Ti is 83.4%. Therefore, the analysis results of the titanium dioxide film are considered to be effective for modifying the ITO glass and serving as the electron collecting layer 22 of the organic polymer solar cell. Please refer to FIG. 5, which discloses a conventional organic polymer solar cell (ITO glass/PEDOT: PSS/P3HT: PCBM/Ca+Al, as shown in the figure i, the curve is represented by □) and the organic matter of the present invention. Molecular solar cell (ιτο玻璃/Ti02/P3HT: PCBM/SPDPA/Au+Ag, as shown in Figure 2, the curve shows the voltage/current density of ▲ for the curve without 'Ti〇2') The Φ map, together with Figures 3 and 4, further defines the energy level positions of the various layer structures of the present invention. As shown in Fig. 5, the component characteristics (□) of the conventional organic 1% molecular solar cell are as follows: open circuit voltage (Voc) is 〇.6〇v, and short circuit current density (Jsc) is 9.43. mA/cm2, power conversion efficiency (PCE) was 3.74%, and fill factor factor, FF) was 0.66. Furthermore, when the (reverse type) organic polymer solar cell of the present invention is not modified with a titanium dioxide film, the layered structure thereof is IT 〇 glass / Ρ3 ΗΤ: PCBM/SPDPA/Au+Ag ', and its element characteristics (♦) are as follows · v〇c (10) V, Jsc = 0.74 mA/cm2, PCE = 0.02%, and FF = 0.25. In contrast, 19 201024335 found that the performance of this component is ideal, the main reason for the discovery is that the difference between the energy barrier between the glass and the active layer p3HT: pcBM is 4.7eV, the lowest unoccupied orbital energy level of PCBM ( LUMO) ...4.3eV) 'causes electrons to appear obstruction during transmission; the second is HQ glass indium 钖 oxygen (10) layer _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The p_N junction can be known from this component (4) = _ too small. On the other hand, the present invention can be observed that the characteristics of the battery (4) are greatly improved by the structure (10) of the oxidized film (10), the glass melon & DM, PCBM/Sm>A/Au+Ag, and the · V〇c = 0.58 V, Jsc = 10.46 mA/cm2, PCE = 3.91%,

及FF =0.64 ’其中此Voc之數值係為p3HT的最高佔據軌道能 階(HOMO)與PCBM的最低無佔據軌道能階(LUM〇)的差異, 幾乎等於二電極(銦錫氧化物層與金/銀層)與主動層: PCBM)之間形成歐姆接觸時(即沒有任何能障)才會顯現出的 Voc特性’因此表示本發明選用的二氧化鈦細及續酸化聚二 苯胺(SPDPA)等材料在腿位置上是良好的。骑,由較大的 Jsc值可以判斷出其二氧化鈦薄膜具有良好的電子傳導特性, 而另一邊的磺酸化聚二苯胺薄膜則具有良好的電洞傳導特 性。另外,磺酸化聚二苯胺薄膜可能具有光學腔體的作用 (optical spacer)導致太陽光可能在主動層内有增益強度,所以 可以發現其〗se更大,及此元件之電子電洞對分離的情況更 好’元件内也不會發生空間電荷(spacecharge)的情形,因而能 確保元件效率。 请參照第6圖所示,其揭示本發明四種實施例之電麗/電流 20 201024335 ' 密度統計圖,其中以磺酸化聚苯胺衍生物做為電洞收集層及以 二氧化鈦做為電子收集層之結構所構成的有機光電半導體元 件可參考第2圖。在第6圖中,本發明第一實施例之有機光電 半導體元件的分層結構為:ITO玻璃/Ti02/P3HT : PCBM/SPDPA/Au+Ag(其曲線以▲表示);本發明第二實施例的 分層結構為:ITO玻璃/Ti02/P3HT: PCBM/Au+Ag(其曲線以△ 表示);本發明第三實施例之有機光電半導體元件的分層結構 為:ITO 玻璃/TKVP3HT : PCBM/SPDPA/Ag(其曲線以#表 示);及本發明第四實施例之有機光電半導體元件的分層結構 為:ITO玻璃/Ti02/P3HT : PCBM/Ag(其曲線以〇表示)。在蒸 鍍有Au+Ag之第一及第二實施例中,第一實施例進一步將磺 酸化聚二苯胺(SPDPA)塗佈在該主動層23(P3HT : PCBM)上, 可將元件特性由Voc=0.22 V提升到0.58 V。在蒸鍍有Ag之第 三及第四實施例中,第三實施例進一步將磺酸化聚二苯胺 (SPDPA)塗佈在該主動層23上,可將元件特性由Voc=0.12 V 〇 提升到〇·56 V,此Voc值暗示SPDPA的功函數與P3HT的最 高佔據軌道能階(HOMO)之間的能階差是屬於歐姆接觸的關 係。因此,第一實施例之元件的光轉換效率實際上是3.91%, 而第三實施例的光轉換效率是3.44%。由於SPDPA與Ag之間 的功函數差異仍然過大,所以兩者之間還是存在些微能障,所 以並沒有比SPDPA與Au+Ag接面來的匹配。 請再參照第6圖所示,在第二實施例中,p3HT:PCBM與 Au+Ag接觸時’ Voc值之結果並不如預期。P3HT的HOMO 為4.9eV,而Au的功函數為5.0eV,理論上兩者之間應該是歐 21 201024335 姆接觸’但是實際上確是蕭特基接觸(Sch〇ttky contact),其原 因在於兩者之間的界面處產生偶極能障。相同的,在第四實施 例之Ag系統中,在P3HT:PCBM與Ag接觸時亦可觀察到相 似的現象。另一方面,在第一實施例中,在P3ht:PCBM/SPDPA 與Au接觸時,因為SPDPA本身屬於高度摻雜的導電性高分 子物質,其特性會呈現類似金屬性質,故SPDPA與Au的界 面即不容易產生能障,而SPDPA與P3HT:PCBM之間則由於 ^ 高分子散亂的排列關係,所以並不會有特定方向的偶極矩產 生,也就是能夠中和該界面處所有偶極能障,所以在第一實施 例將Au蒸鍍於SPDPA上時,會產生穩定的功函數特性。由 此結果確實讓我們知道藉由SPDPA的修飾過後,可有效克服 原先有機層與金屬之間的能障問題(如第二及第四實施例之結 構),同時也顯現電池有更好的表現,所以磺酸化聚苯胺衍生 物(如磺酸化聚二苯胺SPDPA、磺酸化聚三苯胺SPTPA或其共 聚物)皆非常適合做為電洞收集層24。 參 請參照第7、8、9及10圖所示,其分別揭示習用有機高分 子太陽能電池(IT0 玻璃/PEDOT : PSS/P3HT : PCBM/Ca+Al, 如第1圖所示,其曲線以□表示)及本發明之有機高分子太陽 能電池(IT0 玻璃/TKVP3HT : PCBM/SPDPA/Au+Ag,如第 2 圖所示,其曲線以▲表示)之開路電壓(v〇c)、短路電流(Jsc)、 光轉換效率(PCE)及填充因子(FF)之統計圖。如第7圖所示, 經過400小時後,本發明之Voc由0 6v變成〇57V,其% 值幾乎沒有改變,表示選用的二氧化鈦薄膜及spDpA薄膜在 空氣中是十分穩定的材質,所以IT0玻璃之鋼錫氧化物層(或 22 201024335And FF = 0.64 'where the value of this Voc is the difference between the highest occupied orbital energy level (HOMO) of p3HT and the lowest unoccupied orbital energy level (LUM〇) of PCBM, which is almost equal to the two electrodes (indium tin oxide layer and gold /Vot layer) and active layer: PCBM) when the ohmic contact is formed (ie, without any energy barrier) will show the Voc characteristics 'thus, therefore, the selected titanium dioxide fine and acidified polydiphenylamine (SPDPA) and other materials used in the present invention It is good at the leg position. On the ride, the larger Jsc value can be judged that the titanium dioxide film has good electron conduction characteristics, while the other side of the sulfonated polydiphenylamine film has good hole conduction characteristics. In addition, the sulfonated polydiphenylamine film may have an optical spacer, which may cause the sunlight to have a gain intensity in the active layer, so that it can be found that the se is larger and the electronic hole of the component is separated. The situation is better 'there is no space charge in the component, thus ensuring component efficiency. Please refer to FIG. 6 , which discloses a density/current 20 201024335 ' density chart of four embodiments of the present invention, in which a sulfonated polyaniline derivative is used as a hole collecting layer and titanium dioxide is used as an electron collecting layer. Refer to Fig. 2 for the organic optoelectronic semiconductor device constructed by the structure. In Fig. 6, the layered structure of the organic optoelectronic semiconductor device of the first embodiment of the present invention is: ITO glass / Ti02 / P3HT : PCBM / SPDPA / Au + Ag (the curve is indicated by ▲); the second embodiment of the present invention The layered structure of the example is: ITO glass / Ti02 / P3HT: PCBM / Au + Ag (the curve is represented by Δ); the layered structure of the organic optoelectronic semiconductor component of the third embodiment of the present invention is: ITO glass / TKVP3HT : PCBM /SPDPA/Ag (the curve is indicated by #); and the layered structure of the organic optoelectronic semiconductor device of the fourth embodiment of the present invention is: ITO glass / Ti02 / P3HT : PCBM / Ag (the curve is represented by 〇). In the first and second embodiments in which Au+Ag is vapor-deposited, the first embodiment further coats the sulfonated polydiphenylamine (SPDPA) on the active layer 23 (P3HT: PCBM), and the device characteristics can be Voc=0.22 V is raised to 0.58 V. In the third and fourth embodiments in which Ag is deposited, the third embodiment further coats the active layer 23 with a sulfonated polydiphenylamine (SPDPA), which can be improved from Voc=0.12 V 到 to 〇·56 V, this Voc value implies that the energy level difference between the work function of SPDPA and the highest occupied orbital level (HOMO) of P3HT is an ohmic contact relationship. Therefore, the light conversion efficiency of the element of the first embodiment is actually 3.91%, and the light conversion efficiency of the third embodiment is 3.44%. Since the difference in work function between SPDPA and Ag is still too large, there are still some micro-energy barriers between the two, so there is no match between SPDPA and Au+Ag. Referring again to Fig. 6, in the second embodiment, the result of the Voc value when p3HT:PCBM is in contact with Au+Ag is not as expected. The HOMO of P3HT is 4.9eV, and the work function of Au is 5.0eV. In theory, it should be Euro 21 201024335. The contact is actually 'Sch〇ttky contact'. The reason is that A dipole energy barrier is created at the interface between the two. Similarly, in the Ag system of the fourth embodiment, a similar phenomenon was observed when P3HT:PCBM was in contact with Ag. On the other hand, in the first embodiment, when P3ht:PCBM/SPDPA is in contact with Au, since SPDPA itself is a highly doped conductive polymer substance, its characteristics will exhibit similar metal properties, so the interface between SPDPA and Au That is, it is not easy to generate energy barriers, and SPDPA and P3HT: PCBM are due to the disordered arrangement of the polymer, so there is no dipole moment in a specific direction, that is, it can neutralize all dipoles at the interface. The energy barrier is such that when the Au is vapor-deposited on the SPDPA in the first embodiment, stable work function characteristics are produced. This result does let us know that the modification of SPDPA can effectively overcome the energy barrier problem between the original organic layer and the metal (such as the structure of the second and fourth embodiments), and also shows that the battery has better performance. Therefore, a sulfonated polyaniline derivative such as sulfonated polydiphenylamine SPDPA, sulfonated polytriphenylamine SPTPA or a copolymer thereof is very suitable as the hole collecting layer 24. Refer to Figures 7, 8, 9 and 10 for the disclosure of conventional organic polymer solar cells (IT0 glass/PEDOT: PSS/P3HT: PCBM/Ca+Al, as shown in Figure 1 □ indicates) and the open circuit voltage (v〇c) and short-circuit current of the organic polymer solar cell of the present invention (IT0 glass/TKVP3HT: PCBM/SPDPA/Au+Ag, as shown in Fig. 2, whose curve is indicated by ▲) Statistical graph of (Jsc), light conversion efficiency (PCE) and fill factor (FF). As shown in Fig. 7, after 400 hours, the Voc of the present invention is changed from 0 6v to 〇57V, and the % value thereof hardly changes, indicating that the selected titanium dioxide film and spDpA film are very stable materials in the air, so the IT0 glass Steel tin oxide layer (or 22 201024335

Au+Ag的金屬電極層)與主動層之間都維持在歐姆接觸的良好 情況。如第8圖所示,經過400小時後,本發明之;fsc由原先 的10.26mA/cm2稍微衰退到9.34mA/cm2。如第9圖所示,經 過400小時後,本發明之PCE由3.81%變成2 82%。如第1〇 圖所示,經過400小時後,本發明之FF由0 62變成〇·55,其 係影響有機高分子太陽能電池之元件效率的最大改變,可能是 因為在未封裝的情況下,空氣中的水氣與氧氣容易侵襲主動 層’導致主動層之有機物質劣化,影響電子電洞對分離與傳遞 的情況,故元件穩定性上發生些微的衰退。 相較之下’傳統有機高分子太陽能電池的光轉換效率(peg) 一開始雖與本發明相差無幾,但經過4〇〇小時暴露在空氣中的 測试後’其PCE轉卿呈現大幅度的衰退,主要原因為約 金屬層(Ca)的氧化並導致主動層相對較易受環境侵襲。由上述 測試結果可知’本發明選用環境穩定較高的電子收集層二(即 二氧化鈦)及制收制24(即SPDPA),其巾以二氧化欽薄膜 做為該奸找層22可㈣適合的顧數,使魏電子收集 層22與主動層23之間有歐姆接觸而有利於電子的傳遞,以 SPDPA做鱗電洞轉層%歧善縣线層的有機材料與 金屬=極層25之間可能本質存在的偶極能障問題。因此,本 發明提供的元件結構較不會影響元件雄換效铸特性的變 、且有利於抑制水氣或氧氣擴散到主動層,確實有利於確 傳遞效率及提高元件狱性,亦能進—步延長元件之使 =必1再者’本發明提供的_收㈣24之顧化聚苯胺 /丁物及該電子收集層22(二氧化鈦)之製造方法可應用於製 23 201024335 * 做各種有機光電半導體元件,除了應用於上述實施例所列舉的 有機尚分子太陽能電池(polymerphotovoltaic cell)之外,亦可應 用於具相似作動原理的有機薄膜電晶體^p〇lymer thin film transistoi*,OTFT)或高分子發光二極體〇)〇iymer diode ’ PLED)等有機光電半導體元件。 雖然本發明已以較佳實施例揭露,然其並非用以限 制本發明,任何熟習此項技藝之人士,在不脫離本發明 響 之精神和範圍内,當可作各種更動與修飾,因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。 【圓式簡單說明】 第1圖:習用有機高分子太陽能電池結構之示意圖。 第2圖:本發明較佳實施例之以磺酸化聚苯胺衍生物做為電洞 收集層及以二氧化鈦做為電子收集層之結構之示意圖。 _ 第3圖:本發明較佳實施例之二氧化鈦薄膜之紫外光電子光譜 圖。 第4圖:本發明較佳實施例之二氧化鈦薄膜之紫外光吸收光譜 圖,以及二氧化鈦薄膜利用原子力顯微鏡量測的表面粗縫度示 忍圖。 第5圖:習用有機高分子太陽能電池(曲線以□表示)及本發明 之有機高分子太陽能電池(曲線以▲表示’未含Ti〇2的曲線以 ♦表示)之電壓/電流密度統計圖,以及本發明各層結構的能階 饭置之示意圖。 24 201024335 第6圖··本發明四種實施例(其曲線分別以汰、△、籲及〇表 示)之電麈/電流密度統計圖。 第7、8、9及10圖··習用有機高分子太陽能電池(曲線以□表 示)及本發明之有機高分子太陽能電池(曲線以▲表示)之開路 電壓(Voc)、短路電流(Jsc)、光轉換效率(PCE)及填充因子pF) 之統計圖。 【主要元件符號說明】 11導電基板 12電洞收集層 14電子收集層 211導電層 111姻錫氧化物層 13主動層 21導電基板 22電子收集層 23主動層 24電洞收集層 25金屬電極層Both the Au+Ag metal electrode layer and the active layer maintain good ohmic contact. As shown in Fig. 8, after 400 hours, the present invention; fsc slightly degraded from the original 10.26 mA/cm2 to 9.34 mA/cm2. As shown in Fig. 9, after 400 hours, the PCE of the present invention was changed from 3.81% to 2 82%. As shown in Fig. 1, after 400 hours, the FF of the present invention is changed from 0 62 to 〇·55, which affects the maximum change in the efficiency of the component of the organic polymer solar cell, possibly because it is not packaged. The moisture in the air and the oxygen easily invade the active layer' cause the organic matter of the active layer to deteriorate, affecting the separation and transmission of the electron hole, so the element stability is slightly degraded. In contrast, the light conversion efficiency (peg) of traditional organic polymer solar cells was initially comparable to the present invention, but after 4 hours of exposure to air, the PCE turned sharply. The main cause of the decline is the oxidation of the metal layer (Ca) and the active layer is relatively more susceptible to environmental attack. It can be seen from the above test results that the present invention selects an electron collection layer 2 (i.e., titanium dioxide) and a production system 24 (i.e., SPDPA) having a relatively high environmental stability, and the towel is made of a oxidized film as the smear layer 22 (4). Considering the ohmic contact between the Wei electron collecting layer 22 and the active layer 23, which facilitates the transfer of electrons, the SPDPA is used as the scale hole to transfer the layer between the organic material of the Qishan line layer and the metal layer. A dipole energy problem that may exist in essence. Therefore, the component structure provided by the invention does not affect the change of the male cast effect of the component, and is beneficial for suppressing the diffusion of moisture or oxygen to the active layer, and is indeed advantageous for ensuring the transmission efficiency and improving the component prisonerness. The method of manufacturing the step extension element = must be further. The method for producing the polyaniline/butylate of the (four) 24 and the electron collecting layer 22 (titanium dioxide) provided by the present invention can be applied to the manufacture of 23 201024335 * Various organic optoelectronic semiconductors The device can be applied to an organic thin film transistor (OTFT) or a polymer having a similar actuation principle, in addition to the polymer photovoltaic cell enumerated in the above embodiments. An organic optoelectronic semiconductor component such as a light-emitting diode 〇) 〇iymer diode 'PLED). While the present invention has been described in its preferred embodiments, it is not intended to limit the invention, and it is intended that the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Circular Simple Description] Figure 1: Schematic diagram of the structure of a conventional organic polymer solar cell. Fig. 2 is a schematic view showing the structure of a sulfonated polyaniline derivative as a hole collecting layer and titanium dioxide as an electron collecting layer in a preferred embodiment of the present invention. _ Figure 3: Ultraviolet photoelectron spectroscopy of a titanium dioxide film according to a preferred embodiment of the present invention. Fig. 4 is a view showing the ultraviolet absorption spectrum of the titanium dioxide film of the preferred embodiment of the present invention, and the surface roughness measurement of the titanium dioxide film measured by atomic force microscopy. Fig. 5 is a graph showing the voltage/current density of a conventional organic polymer solar cell (shown by □ in the curve) and the organic polymer solar cell of the present invention (the curve is represented by ▲ 'the curve without Ti〇2 is indicated by ♦), And a schematic diagram of the energy level of the various layers of the present invention. 24 201024335 Fig. 6 is a graph of the electric/current density of four embodiments of the present invention (the curves are shown in the figures, Δ, 吁, and 分别, respectively). Figures 7, 8, 9 and 10 · Open circuit voltage (Voc) and short-circuit current (Jsc) of an organic polymer solar cell (shown by □) and the organic polymer solar cell of the present invention (shown by ▲) , graph of light conversion efficiency (PCE) and fill factor pF). [Main component symbol description] 11 conductive substrate 12 hole collecting layer 14 electron collecting layer 211 conductive layer 111 marriage tin oxide layer 13 active layer 21 conductive substrate 22 electron collecting layer 23 active layer 24 hole collecting layer 25 metal electrode layer

2525

Claims (1)

201024335 • 七、申請專利範圍: 1. -種叫酸化聚苯贿生物做為電洞收制之結構,其包 含: 一導電基板,其具有一導電層; -電子收集層’其形成在該導電基板之導電層上; 一主動層,其形成在該電子收集層上;及 電洞收集層’其形成在該主動層上,且該電洞收集層至少 ❹ &含導電性冑分子雜錄苯贿生物,其選自雜化聚二 苯胺、磺酸化聚三苯胺或其共聚物。 2·如申請專纖目第!項職之以猶絲苯贿生物做為 電洞收集層之結構,其中該電子收集層上另形成一高分子修 飾層,其介於該電子收集層及主動層之間,該高分子修飾層 選自胺丙絲三甲氧基魏、N_三甲氧基魏基乙二胺或氯 丙基三甲氧基石夕烷。 ❿ 3.如t料纖㈣丨項技雜化聚苯贿生物做為 電洞收集層之結構,其中該主動層為聚(3-己絲嗔吩)與 (6,6)·苯基碳六十—丁酸甲_共她高分子混換系統。 4. 如申请專利範圍第】項所述之以續酸化聚苯胺衍生物做為 電洞收集層之結構,其中該結構另包含一金屬電極層,其堆 疊於該電洞收集層上’該金屬電極層選自金層、銀層或其組 合0 5. 如申請專利範圍第!項所述之以續酸化聚苯胺衍生物做為 26 201024335 隹爲3集層之、。構’其尹該結構係一反置型結構,該電子收 、曰歸及電顺集層依序堆疊在該導f基板之-下表 面的導電層上。 6. ^申⑷^項_技仙财聰生物做為 洞收集層之結構,其中該結構係選自有機高分子太陽能電 池、有機薄臈電晶體或高分子發光二極體。 7·種以—氧化鈦做為電子收集層之結構的製造方法,其中該 =構包含一導電基板、-電子收集層、一主動層及一電洞收 .、層’該電子收集層、主動層及電洞收集層依序堆叠在該導 電二板之導電層上,且該電子收集層之製造方法包含步 提供異丙氧基欽之溶膠; 將異丙氧総之轉塗做料電紐上,使脉解轉換成 一氧化欽凝膠;及 對該導電餘上的二氧編_行高溫加熱,以形成二氧 化鈦薄膜做為該電子收集層。 8. 如申請專·_ 7項所叙以二氧缝做為電子收集層 之結構的觀方法,其愤電子轉層上另形成—高分子修 飾層,其介於該電子收集層及主動層之間,該高分子修飾層 選自胺丙燒基三甲氧基石夕烧、N•三甲氧基魏基乙二胺或氯 丙基三甲氧基發烷。 9. 如申料纖圍第7項職如二氧化鈦做鱗子收集層 27 201024335 之結構的製造方法,其中該主_為邮己錄塞吩)與 本基碳計—猶甲_聽性高分子混播系統。 10.如申請專·H第7項所叙以二氧化鈦做輕子收集層 之結構的製造綠,其找結構純含—麵層,其堆 ^於該電触集層上,該金屬電極層選自金層、銀層或其組 合。 11. 如申請專利範圍第7項所述之以二氧化鈦做為電子收集層 2結構的製造方法,其中該結構係—反置型結構,該電子收 、層、主動層及電洞收集層依序堆疊在該導電基板之一下表 面的導電層上。 12. 如申請專利範圍第7項所述之以二氧化鈦做為電子收集層 之結構的製造方法,其愤結構係選自有機高分子太陽能電 池、有機薄膜電晶體或高分子發光二極體。 13. 種以’酸化聚苯贿生物做為電洞收集層及以二氧化欽 做為電子收集層之結構,其包含: 一導電基板,其具有一導電層; 電子收集層,其形成在該導電基板之導電層上,該電子收 集層係為利用異丙氧基鈦形成之二氧化欽薄膜; 主動層,其形成在該電子收集層上;及 一電洞收集層’其形成在該主動層上,且該電概集層至少 :導雜高分子續酸化聚苯贿生物,其選‘聚二 本胺、喊化聚三苯胺或其共聚物。 28 201024335 , 14.如_料纖圍第13撕述之叫酸化鮮麟生物做為 電洞收集層及以二氧化鈦做為電子收歸之結構,其中該電 子收集層上另形成-高分子修飾層,其介於該電子收集層及 主動層之間,該高分子修飾層選自胺丙絲三甲氧基魏、 怵三曱氧基珍烧基乙二胺或氯丙基三甲氧基石夕烷。 15. 如申請專讎圍第13項所述之以雜綺苯麟生物做為 電洞收集層及以二氧化鈦料電子㈣層之結構,其中該主 ❿ 動層為聚(3-己烧基嗟吩)麵6)-苯基碳六十一丁酸曱醋的 共輛•性兩分子混換系統。 16. 如申請專利範圍帛I3項所述之以績酸化聚苯胺衍生物做為 電洞收集層及以二氧化鈦做為電子轉層之結構,其中該結 構另包含一金屬電極層,其堆疊於該電洞收集層上,該金屬 電極層選自金層、銀層或其組合。 鲁 17.如申請專利範圍第13項所述之以續酸化聚苯胺衍生物做為 電洞收集層及以二氧化鈦做為電子收集層之結構,其中該結 構係-反置型麟’該電子收集層、主騎及電洞收集層依 序堆疊在該導電基板之一下表面的導電層上。 Μ.如申請專利範圍第13項所述之以磺酸化聚苯胺衍生物做為 電洞收集層及以二氧化鈦做為電子收集層之結構,其中該結 構係選自有機高分子太陽能電池、有機薄膜電晶體或高分子 發光二極體。 29201024335 • VII. Patent application scope: 1. A structure called acidified polyphenylene bribe as a hole-receiving structure, comprising: a conductive substrate having a conductive layer; - an electron collecting layer formed on the conductive On the conductive layer of the substrate; an active layer formed on the electron collecting layer; and a hole collecting layer formed on the active layer, and the hole collecting layer is at least ❹ & A benzoic organism selected from the group consisting of hybrid polydiphenylamine, sulfonated polytriphenylamine or a copolymer thereof. 2. If you apply for a special fiber! The structure of the Jewish broth is used as the structure of the hole collecting layer, wherein a polymer modified layer is formed on the electron collecting layer, which is interposed between the electron collecting layer and the active layer, and the polymer modifying layer It is selected from the group consisting of amide trimethoxy Wei, N_trimethoxyweig ethylenediamine or chloropropyltrimethoxy oxalate. ❿ 3. For example, t-fiber (4) 丨 技 杂 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 聚 , , , , , , , , , , , , , , , , , , , , , , , , Sixty-butyric acid A_ a total of her polymer mixing system. 4. The structure of the polyacidified polyaniline derivative as a hole collecting layer as described in the scope of the patent application, wherein the structure further comprises a metal electrode layer stacked on the hole collecting layer. The electrode layer is selected from the group consisting of a gold layer, a silver layer or a combination thereof. 5. 5. As claimed in the patent scope! The polyaniline derivative described in the section is a 26-layer layer of 26 201024335. The structure of the structure is an inverted structure, and the electron collection, the enthalpy and the electrically conductive layer are sequentially stacked on the conductive layer on the lower surface of the f-substrate. 6. ^Shen (4)^ Item_Technology is used as the structure of the hole collecting layer, wherein the structure is selected from an organic polymer solar battery, an organic thin germanium transistor or a polymer light emitting diode. 7. A method for manufacturing a structure in which titanium oxide is used as an electron collecting layer, wherein the structure comprises a conductive substrate, an electron collecting layer, an active layer, and a hole collecting layer, the layer 'the electron collecting layer, and an active layer The layer and the hole collecting layer are sequentially stacked on the conductive layer of the conductive second plate, and the manufacturing method of the electron collecting layer comprises the step of providing a sol of isopropoxy oxime; The pulse is converted into an oxidized gel; and the remaining dioxin is heated at a high temperature to form a titanium dioxide film as the electron collecting layer. 8. If the application of the dioxin sew as the structure of the electron collecting layer is described in the application, the polymer layer is formed on the anger electronically transferred layer, which is interposed between the electron collecting layer and the active layer. Between the polymer modification layer is selected from the group consisting of amine propyl trimethoxy zeoxime, N. trimethoxy weiyl ethylene diamine or chloropropyl trimethoxy ketone. 9. For example, the manufacturing method of the structure of the seventh item such as titanium dioxide for the scale collection layer 27 201024335, wherein the main _ is the postal sequel) and the base carbon meter - the yoke _ listening polymer Mixing system. 10. If the application of the titanium dioxide as the structure of the lepton collection layer is as follows, the structure is purely containing a surface layer, which is stacked on the electro-contact layer, and the metal electrode layer is selected. From gold, silver or a combination thereof. 11. The method for manufacturing a structure of an electron collecting layer 2 using titanium dioxide as described in claim 7, wherein the structure is a reverse structure, and the electron collecting layer, the active layer and the hole collecting layer are sequentially stacked. On the conductive layer on the lower surface of one of the conductive substrates. 12. The method for producing a structure using titanium dioxide as an electron collecting layer as described in claim 7, wherein the anger structure is selected from the group consisting of an organic polymer solar cell, an organic thin film transistor, or a polymer light emitting diode. 13. A structure in which an acidified polyphenylene bribe is used as a hole collecting layer and a dioxide is used as an electron collecting layer, comprising: a conductive substrate having a conductive layer; and an electron collecting layer formed thereon On the conductive layer of the conductive substrate, the electron collecting layer is a dioxide film formed by using titanium isopropoxide; an active layer formed on the electron collecting layer; and a hole collecting layer formed on the active layer On the layer, and the electric current layer is at least: a hetero-polymerized polyacidified polyphenylene bile, which is selected from the group consisting of polydiamine, shunt polytriamine or a copolymer thereof. 28 201024335 , 14. For example, _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It is interposed between the electron collecting layer and the active layer, and the polymer modifying layer is selected from the group consisting of aminopropyltrimethoxywei, ruthenium triyloxyethylenediamine or chloropropyltrimethoxy aspartame. 15. If the application is as specified in Item 13, the porphyrin lining organism is used as the hole collecting layer and the structure of the electronic (four) layer of titanium dioxide material, wherein the main moving layer is poly(3-hexyl hydrazine).吩) face 6) - phenyl carbon hexadecanoate vinegar vinegar a total of two-molecular mixing system. 16. The structure of the acidified polyaniline derivative as the hole collecting layer and the titanium dioxide as the electron transfer layer as described in the scope of claim 帛I3, wherein the structure further comprises a metal electrode layer stacked thereon On the hole collecting layer, the metal electrode layer is selected from the group consisting of a gold layer, a silver layer, or a combination thereof. Lu 17. The structure of the polyacidified polyaniline derivative as a hole collecting layer and the use of titanium dioxide as an electron collecting layer as described in claim 13 of the patent scope, wherein the structure-reverse type Lin' electron collecting layer The main ride and the hole collecting layer are sequentially stacked on the conductive layer on the lower surface of one of the conductive substrates. Μ The structure of the sulfonated polyaniline derivative as the hole collecting layer and the titanium dioxide as the electron collecting layer as described in claim 13 wherein the structure is selected from the group consisting of organic polymer solar cells and organic thin films. A transistor or a polymer light-emitting diode. 29
TW097149300A 2008-12-17 2008-12-17 Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor TWI378114B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097149300A TWI378114B (en) 2008-12-17 2008-12-17 Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097149300A TWI378114B (en) 2008-12-17 2008-12-17 Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor

Publications (2)

Publication Number Publication Date
TW201024335A true TW201024335A (en) 2010-07-01
TWI378114B TWI378114B (en) 2012-12-01

Family

ID=44852038

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097149300A TWI378114B (en) 2008-12-17 2008-12-17 Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor

Country Status (1)

Country Link
TW (1) TWI378114B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6052170B2 (en) * 2011-05-25 2016-12-27 日産化学工業株式会社 Hyperbranched polymer and carbon nanotube dispersant
TWI776833B (en) * 2016-12-16 2022-09-11 日商日產化學工業股份有限公司 Composition for hole gathering layer of organic photoelectric conversion element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6052170B2 (en) * 2011-05-25 2016-12-27 日産化学工業株式会社 Hyperbranched polymer and carbon nanotube dispersant
TWI776833B (en) * 2016-12-16 2022-09-11 日商日產化學工業股份有限公司 Composition for hole gathering layer of organic photoelectric conversion element

Also Published As

Publication number Publication date
TWI378114B (en) 2012-12-01

Similar Documents

Publication Publication Date Title
Yang et al. Interface engineering in planar perovskite solar cells: energy level alignment, perovskite morphology control and high performance achievement
Li et al. An inverted polymer photovoltaic cell with increased air stability obtained by employing novel hole/electron collecting layers
Tan et al. Solution-processed nickel acetate as hole collection layer for polymer solar cells
Ha et al. Device architecture for efficient, low-hysteresis flexible perovskite solar cells: Replacing TiO2 with C60 assisted by polyethylenimine ethoxylated interfacial layers
Li et al. Boost the performance of inverted perovskite solar cells with PEDOT: PSS/Graphene quantum dots composite hole transporting layer
TW201133974A (en) Method for improving the efficiency of a flexible organic solar cell
CN109802041B (en) Non-fullerene perovskite planar heterojunction solar cell and preparation method thereof
Zushi et al. Fabrication and characterization of TiO2/CH3NH3PbI3-based photovoltaic devices
KR20110051821A (en) P-type nio conducting film for organic solar cell, the method for preparation of nio conducting film and organic solar cell with enhanced light to electric energy conversion using thereof
Sun et al. Indium tin oxide modified with sodium compounds as cathode of inverted polymer solar cells
Wu et al. Improved open-circuit voltage in polymer/oxide-nanoarray hybrid solar cells by formation of homogeneous metal oxide core/shell structures
Shahiduzzaman et al. Enhanced photovoltaic performance of perovskite solar cells via modification of surface characteristics using a fullerene interlayer
TW201210935A (en) Cross-linkable fullerene derivatives and inverted solar cells thereof
CN105440230A (en) Organic rare-earth solid micelle and preparation method thereof, and method for improving photoelectric conversion efficiency of solar cell
CN106856223A (en) A kind of perovskite solar cell of unglazed hysteresis effect and preparation method thereof
CN109065724A (en) A kind of Mo- titanium dioxide-AgNWs flexibility perovskite solar battery and preparation method thereof
TW201024335A (en) Structure of hole-collecting layer made of sulfonated polyaniline derivative and electron-collecting layer made of titanium dioxide and manufacture method therefor
Tao et al. Efficient and stable organic solar cells based on all-solution-processed metal oxide transport layers
TW201025703A (en) Organic thin-film solar cell using fullerene derivative as electron acceptor and method of fabricating the same
Wen et al. Environmentally friendly cathode interlayer modification on edible bio‐acids with enhanced electron extraction and improved power conversion efficiency
CN103972398B (en) A kind of organic inorganic hybridization solaode and preparation method thereof
Chen et al. Performance enhancement of perovskite solar cells through interfacial engineering: Water-soluble fullerenol C60 (OH) 16 as interfacial modification layer
Hamada et al. Solution-processed amorphous niobium oxide as a novel electron collection layer for inverted polymer solar cells
Wiranwetchayan et al. Impact of the morphology of TiO2 films as cathode buffer layer on the efficiency of inverted-structure polymer solar cells
CN113782684B (en) Perovskite thin film and preparation method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees