201017720 六、發明說明： 【發明所屬之技術領域】 本發明為有關基板處理系統之領域。尤其是本發明 揭露一種方法與裝置，用以回收基板處理系統（諸如塗層 或沉積系統）中所使用的前驅物質。 【先前技術】 光伏元件、光電轉換元件或太陽能電池都是將光， 尤其是陽光，轉換成直流電力的元件。低成本、可量產 的薄膜式太陽能電池，由於可使用玻璃、玻璃陶瓷或其 它硬質或撓性物質作為基板材料（亦即基底或基座）替代 結晶矽或多晶矽，因此引起人們的興趣。太陽能電池結 構，亦即負責或可以產生光伏效應的層次順序，係沉積 在多數薄層内。此種沉積可在大氣或真空條件下進行。 技術界中有多種廣為人知的沉積技術，諸如物理氣相沉 積法（PVD)、化學氣相沉積法（CVD)、電漿輔助化學氣相 沉積法（PECVD)、大氣壓力化學氣相沉積法（APCVD)、 或有機金屬化學氣相沉積法(MOCVD)，全都被用在半導 體技術中。自燃性有機金屬化學物，諸如二曱基鋅 (dimethylzinc)與二乙基鋅（diethylzinc)，可在薄膜沉積應 用中作為氧化鋅（ZnO)沉積的前驅物，以用於例如太陽能 電池之製造。通常係使用各種液體前驅物，這些液體前 驅物可在第一製程步驟中蒸發而形成蒸氣。然後，所形 成的蒸氣可用於物件塗層的製程中。 201017720 習知的基板處理系統 的數個階段裏都要配置自 前驅物是非常昂貴的化學 ’其缺點在於基板處理製程中 燃性有機金屬前驅物，而這些 品0 /為了處理這些自燃性有機金屬前驅物並使之蒸發， 須使用各種模組（例如製程模組）、容器、儲筒、蒸發器 或以上各項之任何組合。由於儲存及/或蒸發期間所用的 分子及/或所用的物理條件欠缺穩定性，因此會發生分解 反應，形成金屬及/或聚合物殘留物污染前述儲存體、製 ❹程^蒸發^。因此’這些模組必須㈣清潔，以允許 穩定供應高品質前驅物質；同時，在習知的基板處理系 統下清潔模組時，必須清除該等馳的所有内容物，亦 即自燃有機金屬前驅物。此外，經過此種清潔周期後， 整個系統將需要使用前驅物質（亦即自燃性有機金屬化 予物）冲洗，以便重新建立系統的均衡。在此程序期間， 系統使用率為〇%，亦即，所有用於沖洗系統的前驅物質 都被廢棄而未用於沉積。 參此外，即使在基板處理系統正常運作的期間，未使 用的前驅物質也被廢棄。此乃因為使用自燃性有機金屬 化學物這類前驅物的每一系統，其典型特徵在於其利用 率低於100%，例如是80%。因此，製程中其餘20%未沉 積的前驅物通常是從基板處理系統排放掉，然後輸送至 一清除系統作廢棄處理。 因此’使用習知基板處理系統時，已經導入系統内 的前驅物質若不是沉積就是廢棄。因此，目前亟需一種 5 201017720 導入基板處理系統但在沉積 系統及方法，用以回收雖已導/ 製程期間並未用掉的前驅物質。 本發明之一目的是提供一種系統，用以回 用以回收基板處201017720 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to the field of substrate processing systems. In particular, the present invention discloses a method and apparatus for recovering precursor materials used in substrate processing systems, such as coating or deposition systems. [Prior Art] A photovoltaic element, a photoelectric conversion element, or a solar cell is an element that converts light, particularly sunlight, into direct current power. Low-cost, mass-produced thin-film solar cells have attracted interest because glass, glass ceramics, or other hard or flexible materials can be used as substrate materials (i.e., substrates or susceptors) instead of crystalline germanium or polycrystalline germanium. The solar cell structure, that is, the hierarchical order responsible for or capable of producing photovoltaic effects, is deposited in most of the thin layers. This deposition can be carried out under atmospheric or vacuum conditions. There are many well-known deposition techniques in the technical world, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PECVD), and atmospheric pressure chemical vapor deposition (APCVD). ), or organometallic chemical vapor deposition (MOCVD), all used in semiconductor technology. Self-igniting organometallic chemistries, such as dimethylzinc and diethylzinc, can be used as precursors for zinc oxide (ZnO) deposition in thin film deposition applications for use in, for example, the manufacture of solar cells. Typically, various liquid precursors are used which are vaporized in a first process step to form a vapor. The resulting vapor can then be used in the process of coating the article. 201017720 It is a very expensive chemical to configure the precursor processing system in several stages of the substrate processing system. The disadvantage is that the substrate is processed by the flammable organometallic precursor, and these products are used to treat these pyrophoric organometallics. The precursor is allowed to evaporate and must use various modules (such as process modules), containers, cartridges, evaporators, or any combination of the above. Due to the lack of stability of the molecules and/or physical conditions used during storage and/or evaporation, decomposition reactions occur, and metal and/or polymer residues are formed to contaminate the storage, process, and evaporation. Therefore, 'these modules must be (4) cleaned to allow stable supply of high quality precursor materials; at the same time, when cleaning the module under the conventional substrate handling system, all contents of the gallop, ie, pyrophoric organometallic precursors, must be removed. . In addition, after this cleaning cycle, the entire system will need to be flushed with the precursor material (ie, the pyrophoric organometallic compound) to re-establish the equilibrium of the system. During this procedure, the system usage rate was 〇%, i.e., all precursor materials used in the flushing system were discarded and not used for deposition. In addition, unused precursor materials are discarded even during normal operation of the substrate processing system. This is because each system using precursors such as pyrophoric organometallic chemicals is typically characterized by a utilization of less than 100%, for example 80%. Therefore, the remaining 20% of the undeposited precursor in the process is typically discharged from the substrate processing system and then transported to a purge system for disposal. Therefore, when a conventional substrate processing system is used, the precursor material that has been introduced into the system is discarded if it is not deposited. Therefore, there is a need for a 5 201017720 introduction substrate processing system but a deposition system and method for recovering precursor materials that have not been used during the lead/process. It is an object of the present invention to provide a system for recycling a substrate
更明確地說，此種用於基板處理“之回收前驅物質之 系統包括至少一個與一前驅物質接觸之模組，至少一個 儲槽用以收集該模組之排出物，該排出物包括一前驅物 質；及選擇性地包括至少一個清除減量系統。其中，該 儲槽可將其中容置之前驅物質送回本系統之一模組内。 本發明揭露，被導人-基板處理系統中但未使用的前驅 物質並不需要作廢棄處理，而是可以回收再利用的。 因此，本發明之一基本構想是，收集基板處理系統 中與前驅物質接觸之模組所排出的物質，並將排出物中 所含的前驅物質導回基板處理系統中。藉由回收前驅物 質可降低成本至最低，因為只須購買較少的新前驅物 質。此外，廢棄之材料量亦減至最少，因此可以降低現 有或特定清除設備與環境的負擔。 所述基板處理系統可為任何使用前驅物質來處理基 板之系統。此基板處理系統之一實施例為一塗層或沉積 系統其中之一或其結合。此基板處理系統之另一實施例 係用於生產光伏元件、光電轉換元件、太陽能電池或半 201017720 導體。此基板處理系統之再一實施例係用於薄層沉積。 在一較佳實施例中，此種基板處理系統為一大型或工業 級基板處理系統其中之一或其結合，諸如處理較大量前 驅物質並與昂貴化學物消耗量或耗損量之最佳化或減量 化有高度相關之大尺寸系統。此外，使用此類大型系統 時，由於不必要地廢棄未用的前驅物質，因此產生極高 的成本。 所述前驅物質可為各種基板處理系統中使用的任何 Θ 前驅物質。所述前驅物質較佳為一種自燃性有機金屬物 質，更佳為二乙基辞（DEZ)或二曱基鋅（DMZ)其中之一 或其結合。其優點在於回收此種物質時，可以顯著節省 成本，因為這類物質，尤其是DEZ及DMZ，是非常昂 貴的。 所述模組可為基板處理系統中與基板處理製程所用 前驅物質相接觸的任何模組。在本發明一實施例中，該 模組為一製程模組；在本發明一較佳實施例中，該製程 ❿模組為一氣相沉積模組。所述沉積可在大氣或真空條件 下進行。較佳的實施例是該製程模組為一化學氣相沉積 (CVD)或物理氣相沉積（PVD)模組。更佳的實施例是該製 程模組為一電漿輔助化學氣相沉積（PECVD)模組、一大 氣壓力化學氣相沉積（APCVD)模組或一有機金屬化學氣 相沉積（MOCVD)模組其中之一或其結合。在另一較佳實 施例中，該製程模組係用於薄膜沉積，更佳是用於氧化 鋅（ZnO)薄膜沉積。在本發明其他特定實施例中，該模組 例如可為儲存潔淨前驅物質之一化學前驅物儲槽、容 7 201017720 器、儲筒，或為一蒸發器，或為前述各項之任何組合。 在本發明另一實施例中，該基板處理系統包含一或多個 模組。 所述儲槽可為適合儲存該模組或該基板處理系統其 中之一或其結合排出物的任何容器。在本發明一實施例 中，該基板處理系統包含一或多個模組。在一較佳實施 例中，由該儲槽收集之排出物係該基板處理系統於正常 運作期間由一製程模組產生之排出物。換言之，若該基 板處理系統在其正常“生產”模式下運轉時，前驅物質 ® 會被饋入該製程模組，並於該處進行沉積製程。由於每 一處理系統之特徵在於其利用率低於100%，而於製程中 未沉積的剩餘（亦即未耗用）前驅物質則從製程模組排 出。 同樣地，在一清潔周期後（亦即在利用率為0%時）饋 入基板處理系統的前驅物質，可以用該儲槽收集並回收 利用。 在一較佳實施例中，由儲槽收集的排出物係包括一 ® 前驅物質，並且是從需要清潔之化學前驅物儲槽、容器、 儲筒、蒸發器其中之一或其組合中排出的。如以上所述， 由於儲存或蒸發期間所用的所用分子或物理條件缺乏穩 定性，所以會發生分解反應而形成金屬或聚合物殘留物 污染模組，例如前述之儲存及蒸發模組。因此，為了允 許穩定供應高品質的前驅物質，這些模組必須定期清 潔。清潔時，最好使用不會與前驅物質起反應的載氣， 8 201017720 以便將模組内所含前驅物質中的至少一部份傳送至該儲 槽二從模組送出排出物後’即可清潔該模組。在清潔模 組前’最好是將模組内所有的前驅物質全部排出並 至儲槽内。 在一實施例中，儲槽所收集的排出物是蒸發純質前 驅物質（最佳是二乙基鋅;)之蒸發器所產生的排出物。因 此，所述排出物包括一種純質（無掺雜）前驅物質，最佳 疋—乙基辞。 從本發明中發現，有一部份甚或全部的前驅物質（較 佳為一自燃性有機金屬化學物），可以先從接觸或容置該 物質其中之一或其結合的模組傳送至該儲槽内，而後再 將留在模組内的殘留物料導入該清除系統（亦即較後進 行模組清潔）。藉由先傳送前驅物質，該物質不會被饋入 清除系統做廢棄處理，而可回收並重新導入基板處理系 統此外，本發明之一重要特徵在於，回收的基板材料 係送回該系統之-模組内。因此，儲槽可絲將前驅物 質送回系統之一模組内。 進行傳送時，可採用數種具有通常知識人士已知的 方式。此等方式的一些較佳實例包括連接管線或導管、 泵或超㈣巾之一或其組合，用以移動或料該前驅物 質。較佳是，所述模組係經由至少一管線連接至該儲槽， 及/或經由至少一管線連接至一清除系統。在另一較佳實 施例中，該儲槽額外經由至少一管線連接至一模組，以 便將回收的前驅物質重新導入該處理系統。雖然連接模 9 201017720 組至儲槽的管線與連接儲槽至模組的管線可以是同一條 管線，但是最好提供二條個別的管線，因為從模組傳送 至儲槽的排出物可能會包含殘留物f，不應該再將殘留 物質重新導入處理系統中。 在另一較佳實施例中，將前驅物質送回系統之模组 内時，是使含有排出物的儲槽脫離系統，並在一遠端位 置回收前驅物質。例如可將儲槽送往一獨立工作站， = 收前驅物質，亦即，以相位轉變或蒸 參 =物質。回收的前驅物質隨後可 以重新導入系統之—模組；此模组 】槽儲槽嶋是使用該清除系統清潔)，或另 在管線内傳送前驅物質時，亦 送至儲槽、從模組送至清除減量系 ：=: 組時，係利用多數以㈣Μ回模 的。在另-較佳實施例中，初始 === 泵減壓或混合蒸汽的方收此 联好先μ例如真空 f氣態，然後送至“換 與前酬起反應的载氣。在：二;另=供-種不 回收系統進而包括至少一泵，：如發」另:實施：中’該 一活塞栗或其他相同目的之適當裝置。 螺旋泵、 在本發明另—實施财，任-連接管線内均設一限 201017720 :或流送控制裝置其中之一或其結合。 :::流裝置或流送控制裝置係設於模組二 之—或其結合至模組間的連接管線内。在一 ^佳實施例中，所述模組、儲槽及清除系統間均設置一More specifically, such a system for substrate processing "recovering precursor materials includes at least one module in contact with a precursor material, at least one reservoir for collecting the effluent of the module, the effluent comprising a precursor And optionally comprising at least one purge reduction system, wherein the storage tank can carry the precursor material therein back into one of the modules of the system. The invention discloses that the guided-substrate processing system does not The precursor material used does not need to be disposed of, but can be recycled. Therefore, one of the basic ideas of the present invention is to collect the substance discharged from the module in contact with the precursor in the substrate processing system, and to discharge the material. The precursor material contained in the substrate is transferred back to the substrate processing system. By recovering the precursor material, the cost can be reduced to a minimum because only a small amount of new precursor material needs to be purchased. In addition, the amount of material discarded is also minimized, so that the existing Or a specific removal of equipment and environmental burden. The substrate processing system can be any system that uses a precursor material to process the substrate. One embodiment of the system is one of a coating or deposition system or a combination thereof. Another embodiment of the substrate processing system is for producing photovoltaic elements, photoelectric conversion elements, solar cells, or semi-201017720 conductors. Still another embodiment is for thin layer deposition. In a preferred embodiment, such a substrate processing system is one of or a combination of a large or industrial grade substrate processing system, such as processing a relatively large amount of precursor material and is expensive The optimization or reduction of chemical consumption or consumption has a highly correlated large-scale system. In addition, when such a large-scale system is used, an extremely high cost is incurred due to unnecessary disposal of unused precursor substances. The precursor material may be any ruthenium precursor material used in various substrate processing systems. The precursor material is preferably a pyrophoric organometallic substance, more preferably diethyl (DEZ) or dimercapto zinc (DMZ). One or a combination thereof has the advantage that significant cost savings can be achieved when recycling such materials, as such materials, especially DEZ and DMZ, are very expensive The module can be any module in the substrate processing system that is in contact with the precursor material used in the substrate processing process. In an embodiment of the invention, the module is a process module; In an embodiment, the process module is a vapor deposition module. The deposition may be performed under atmospheric or vacuum conditions. In a preferred embodiment, the process module is a chemical vapor deposition (CVD) or a physical gas. A phase deposition (PVD) module. A preferred embodiment is that the process module is a plasma assisted chemical vapor deposition (PECVD) module, an atmospheric pressure chemical vapor deposition (APCVD) module, or an organometallic chemistry. One of or a combination of vapor deposition (MOCVD) modules. In another preferred embodiment, the process module is used for thin film deposition, and more preferably for zinc oxide (ZnO) thin film deposition. In other specific embodiments, the module can be, for example, a chemical precursor reservoir for storing a clean precursor material, a reservoir, a cartridge, or an evaporator, or any combination of the foregoing. In another embodiment of the invention, the substrate processing system includes one or more modules. The reservoir may be any container suitable for storing one of the module or the substrate processing system or a combination thereof. In an embodiment of the invention, the substrate processing system includes one or more modules. In a preferred embodiment, the effluent collected by the reservoir is an effluent produced by a process module during normal operation of the substrate processing system. In other words, if the substrate processing system is operating in its normal "production" mode, the precursor substance ® is fed into the process module where it is deposited. Since each processing system is characterized by a utilization of less than 100%, the remaining (i.e., unconsumed) precursor material that is not deposited in the process is discharged from the process module. Similarly, the precursor material fed to the substrate processing system after a cleaning cycle (i.e., at 0% utilization) can be collected and recycled using the reservoir. In a preferred embodiment, the effluent collected by the reservoir comprises a ® precursor material and is discharged from one or a combination of chemical precursor reservoirs, vessels, cartridges, evaporators that require cleaning, or a combination of evaporators. . As noted above, due to the lack of stability of the molecular or physical conditions used during storage or evaporation, decomposition reactions can occur to form metal or polymer residue contaminating modules, such as the aforementioned storage and evaporation modules. Therefore, in order to allow stable supply of high quality precursors, these modules must be cleaned regularly. When cleaning, it is best to use a carrier gas that does not react with the precursor material, 8 201017720 to transfer at least a portion of the precursor material contained in the module to the tank 2 after the discharge is sent from the module. Clean the module. It is best to discharge all of the precursor material in the module to the reservoir before cleaning the module. In one embodiment, the effluent collected by the sump is an effluent from an evaporator that evaporates the pure precursor material (preferably diethyl zinc;). Thus, the effluent comprises a pure (undoped) precursor material, preferably 疋-ethyl. It has been found from the present invention that a portion or all of the precursor material (preferably a pyrophoric organometallic chemical) can be first transferred to the reservoir from a module that contacts or houses one of the materials or a combination thereof. The residual material remaining in the module is then introduced into the cleaning system (ie, the module is cleaned later). By transferring the precursor material first, the material is not fed into the cleaning system for disposal, but can be recycled and reintroduced into the substrate processing system. Furthermore, an important feature of the invention is that the recovered substrate material is returned to the system - Inside the module. Therefore, the reservoir can return the precursor material to one of the modules of the system. When transmitting, several methods known to those of ordinary skill can be employed. Some preferred examples of such means include a connecting line or conduit, a pump or a super (four) towel or a combination thereof for moving or feeding the precursor. Preferably, the module is connected to the reservoir via at least one line and/or to a purge system via at least one line. In another preferred embodiment, the reservoir is additionally coupled to a module via at least one conduit for reintroducing the recovered precursor material to the processing system. Although the line connecting the mold 9 201017720 to the storage tank and the line connecting the storage tank to the module may be the same line, it is preferable to provide two separate lines because the discharge from the module to the storage tank may contain residues. Substance f, the residual material should not be reintroduced into the treatment system. In another preferred embodiment, the precursor material is returned to the module of the system by detaching the reservoir containing the effluent from the system and recovering the precursor material at a remote location. For example, the tank can be sent to a separate workstation, = pre-extracted material, that is, phase-shifted or steamed = substance. The recovered precursor material can then be re-introduced into the system-module; the module] the tank storage tank is cleaned using the cleaning system, or when the precursor material is transported in the pipeline, it is also sent to the storage tank and sent from the module. To clear the reduction system: =: When using the group, the majority is replaced by (4). In another preferred embodiment, the initial === pump decompression or mixing of the vapor is first combined with the first μ, such as vacuum f, and then sent to the "replacement of the pre-paid reaction carrier gas. In: two; In addition, the non-recycling system further comprises at least one pump, such as: "other: implementation: medium" the piston or other suitable device for the same purpose. The screw pump, in the other embodiment of the present invention, is provided with a limit of 201017720: or one of the flow control devices or a combination thereof. ::: The flow device or flow control device is located in the module 2 or it is connected to the connection line between the modules. In a preferred embodiment, a module is provided between the module, the storage tank and the cleaning system.
ΓΐίΓ裝置’用以控制排出物究竟要饋往儲槽内或镄 =除系統内。例如’若已超過儲槽之容量或模組之排 出物若包含太多無用殘留物發生其中之—或其結合情 =、雜質或副產物其中之—或其結合（以下統稱為殘留物） 時’可以啟動流送控钱置將排出物導人清除系統内。 在另一實施例中，所述限流或流送控制裝置其中之 一或其結合係包括一感應器，較佳為一光學、聲波或壓 =感應器’用以量測流經各連接管線之排出物的份量或 ^測其組成份其中之—或其結合。此外，所述限流或流 二控制裳，其t之-或其結合可包括—個與該感應器連 ^控制器’命!如一微控^器。所㉛限流或流送控制裝 置可進而包括至少一個閥門，較佳是可以調節液體或氣 體其中之-或其結合流量之閘閥、壓力調節閥或針闕其 中之了ΐ其結合。然後可利用所述控制器控制閥門。閥 門可以设於連接管線内。亦可使用控制器控制本發明系 統:包括的泵、超壓產生裝置或蒸發裝置其中之一或其 結合2在另一實施例中，所述控制器可監測各連接管線 或載氣其中之一或其結合；及/或允許經由一感應器自動 辨識一模組内的排空端點。 、在本發明另一實施例中，所述回收系統包括至少一 過濾器。較佳是，此過濾器係設於模組與儲槽之間。更 201017720 佳是’此過渡器係設於連接模組至儲槽的管線内，或連 接儲槽至模㈣管線可為具有通常知識人士 知悉的任何過濾器種類，並適於濾除模組傳送至儲槽之 排出物所含的無用殘留物，或進一步過濾符合製程品質 標準而從儲槽送回模組之前驅物質。較佳是，所述過濾 器為一吸附式過濾器、一生物濾池、或活性碳過濾器其 中之一或其結合。 本發明中揭露，由儲槽收集的排出物仍可符合製程 品質標準，因此可重新導入基板處理系統内。此外也發❿ 現，一旦前驅物質排出物被收集在儲槽内，前驅物質排 出物中所含的無用殘留物會隨時間沉澱。此外，前驅物 質與用於蒸發刚驅物質的蒸汽也會發生相位分離（phase separation)。因此，可以從儲槽中取回符合製程品質標準 的前驅物質，並將其重新導入基板處理系統，而且最好 是導入一模組。儲槽内收集的排出物狀況可使用感應器 監測，以便決定前驅物質是否符合品質標準。 此外，使前驅物質從氣相轉換成液相時，可使用專 G 技人士所知的數種方式。前驅物材料的狀態係與壓力或 溫度其中之一或其結合相關。例如，DEZ在60°C時為 汽相，可利用一熱交換器（最好在-25。(：下工作）使之有效 冷卻而轉換成液相。本發明揭露，若一前驅物質（較佳為 純質前驅物質，最佳為DEZ)經過此種相位轉變，前驅物 質中的雜質會因其實體重量而沉澱。這些雜質不會發生 後續的移動，僅有回收的前驅物質（最好已被轉回氣相） 才會被傳送。若前驅物質在液相中，無用殘留物會加速 12 201017720 在另-實施例中，為了達到從氣相至液相的相位 例如可利用一真空泵減壓或利用一冷卻裝置降低 溫度其中之一或其結合。 如上所述，最好額外使用過濾器，以便確保前驅物 質符合製程品質標準。 由於材料流量的控制並不需要非常精確，所以也可 使用堅固的儀器與材料流量控制裝置。 φ 、本發明另一層面係提供一種運作本發明前述系統的 方法，及一種基板處理系統所用前驅物質之回收方法。 此^法包括的步驟為：a)將前述處理系統之一模組產生 之刚驅物質排出物傳送到至少一儲槽；以及b)將符合製 程品質標準之前驅物質傳送到該處理系統之一模組内。 如以上有關本發明系統之說明，儲槽内收集的前驅 物質排出物仍可符合製程品質標準，或於一段時間後等 前驅物質排出物内所含無用殘留物沉澱時，可以重新得 ❹到符合製程品質的標準。隨後可將儲槽内收集的符合製 •程品質標準的前驅物質重新導入系統。重新 好經由一模組，更佳是經由一儲存潔淨前驅物質的容 器，或經由連接此種容器至基板處理系統之管線。 根據本發明之方法，其較佳實施例及優點均對應以 上所述本發明之系統，凡具有通常知識之人士當可輕易 理解。 更明確地說，所述模組内容置的前驅物質係全部或 者較佳為一部份被傳送至該儲槽内。其優點在於無用的 13 201017720 2=仍留在模組内’不會傳送到儲槽内或堵塞系統的 爾毛在ιί佳實施例中，傳送前驅物質排出物時，係使 : 、蒸發或載氣等其中之一或其結合方式來進 行。 在另一較佳實施例中，係額外降低儲 溫度其中之—或其結合。如前所解說’其優點在於= 生前驅物質之相位轉變而使無用殘留物加速沉殿。 在另一較佳實施例中，係將前驅物質排出物保存在 該儲槽中，直到全部或絕大部份的無用殘留物都已沉殿。 在另實施例中，前驅物質排出物係經額外過遽。 最好是在前驅物質排出物抵達儲槽前即先過濾及/或在 前驅物質離開儲槽後亦加以過濾。 所附申請專利範圍中亦提供許多本發明其他具有效 益的實施例。 【實施方式】 藉由參照以下說明之實施例’將可明白本發明前述 及其他各目的。 圖1顯示根據本發明用以回收基板處理系統中所用 前驅物質之系統1。系統1包括二個模組2,其中之—模 組為一電漿輔助化學氣相沉積製程模組21，用以沉積氣 化鋅；另一模組為一潔淨前驅物質儲存容器2 2,用以餘 201017720 存潔淨的前驅物質。 模組2係經由一系列管線5、6而與一儲槽3及一清 除系統4連接。清除系統基本上是用以燃燒前驅物質排 出物。此外，連接各模組、儲槽及清除系統的管線内設 有一流送控制裝置9。流送控制裝置9係用於引導前驅 物質排出物至儲槽3或至清除系統4。在本實施例中， 前驅物質排出物為二甲基鋅(DMZ)或二乙基鋅(dez)。可 利用感應器（圖未示）來量測參數，以決定將前驅物質排 •出物導至何處時，例如參數可為前驅物質排出物的品質 (亦即其中無用殘留物的含量）及/或儲槽3内目前儲存的 前驅物質排出物份量。 管線5、6、7 質之流量。 内設有多數閥門8，用以控制前驅物 六係經由另一管線7而與儲存潔淨前驅物質的 谷器2.2連接。 匕ϊ’從電襞輔助化學氣相沉積製程模組2.卜潔淨 ==存容器2·2通往儲槽3的管線，以及從儲槽3 返回潔淨前驅物質儲在交哭 附式㈣^ 的管_，設有多數吸 物。0,用以進一步去除前驅物質中無用的殘留 :二r傳=二從 之品質低於某一水緑t储槽3萬-剛驅物質排出物 前驅物質排時亦即，萬一系統之感應器測出 質排出物包含太多無用的殘留物，而且無法使用 15 201017720 儲槽及過濾器適當去除該等殘留物時，則經由管線6並 利用流送控制裝置9直接將前驅物質排出物重新導向清 除減量系統4。若儲槽3内儲存的前驅物質排出物已達 其容量限制，也同樣產生重新導向的情況。 當模組2内容置的前驅物質幾乎全都傳送至儲槽3 後，即進行模組清潔。清潔周期間產生的廢物中，主要 包含無用的殘留物，所以直接傳送至清除減量系統4。 前往儲槽3的途中，係利用管線5内的吸附式過渡 器10進行剛驅物質排出物的首次過濾。儲槽内的壓力係 保持在大氣壓力以下，以使前驅物f排出物發生相位轉 變形成液態，因而產生無用殘留物沉澱。隨後從儲槽將 前驅物質送回模組2.2,並用管線7内的過濾器1〇 二次過瀘。 接著’可以用模組2内容置的前驅物質沖洗系統， 例如潔淨前驅物質的儲存容器22與沉積氧化鋅的電聚 辅助化學氣相沉積製程模組二者間的管線⑴以及 製程模組本身，以重㈣助前驅物質_衡。由於沖 洗期間的利用率為0 %，若是使用f知系統時 :物質通常都是導向清除減量系統，如今則可由儲二 f收集’如前所說明。藉此，有大量的前驅物質可以回 收利用，因此可以顯著節省前驅物質。 以^雖以附圖及前述說明詳細顯示與解說本發明， 與解說僅可視為舉例而非用以限制本發 明。本發明並不限於以上揭示之各實施例。凡具有此类 t 201017720 技術之人士當可理解，於實施所請發明時，經由研究其 附圖、揭示内容及所附申請專利範圍時，可對所揭露的 實施例做其他的變化。在本案申請專利範圍中“包括” 一字並不排除其他元件或步驟，不定冠詞“一，，並不排 除多數。在彼此不同的附屬項中所述及的某些量測值， 並不表示不能利用此等量測值之組合而達更有利的效 用。申請專利I!圍中的任何參考標號，不應將之解釋 用以限制請求範圍。 【圖式簡單說明】 第1圖係為本發明之本發明之系統的概要圖 【主要元件符號說明】 1 :前驅物質回收系統 2:模組 ❹ 2.1:電漿輔助化學氣相沉積製程模組 2.2:潔淨前驅物質儲存容器 3:儲槽 4:清除減量系統 5 :管線 6 ·管線 7:管線 8:限流裝置 9:流送控制裴置 17 201017720 ίο:吸附式過濾器；以及 11:管線The ΓΐίΓ device is used to control whether the effluent is to be fed into the tank or 镄 = in the system. For example, 'if the capacity of the tank has been exceeded or if the effluent of the module contains too much useless residue, or its combination =, impurities or by-products thereof, or a combination thereof (hereinafter collectively referred to as residue) 'You can start the flow to control the money and set the discharge to clear the system. In another embodiment, one of the current limiting or flow control devices or a combination thereof includes an inductor, preferably an optical, acoustic or pressure=sensor' for measuring the flow through each connecting line. The portion of the effluent or the component thereof is measured - or a combination thereof. In addition, the current limiting or flow control device, or a combination thereof, may include a controller connected to the sensor, such as a micro controller. The 31 current limiting or flow control device may in turn comprise at least one valve, preferably a combination of a liquid or gas therein, or a combination thereof, a gate valve, a pressure regulating valve or a needle. The controller can then be used to control the valve. The valve can be located in the connecting line. The controller can also be used to control the system of the present invention: one of the included pump, overpressure generating device or evaporating device or a combination thereof. In another embodiment, the controller can monitor one of the connecting lines or the carrier gas. Or a combination thereof; and/or allowing automatic identification of an emptying endpoint within a module via a sensor. In another embodiment of the invention, the recycling system includes at least one filter. Preferably, the filter is disposed between the module and the reservoir. More 201017720 佳是'This transitioner is located in the pipeline connecting the module to the tank, or connecting the tank to the mold (4) pipeline can be any filter type known to the general knowledge, and is suitable for filtering module transmission The useless residue contained in the effluent from the storage tank, or further filtered to meet the process quality standards and returned to the module before the module is driven. Preferably, the filter is one of an adsorbent filter, a biofilter, or an activated carbon filter or a combination thereof. It is disclosed in the present invention that the effluent collected by the reservoir can still meet process quality standards and can therefore be reintroduced into the substrate processing system. It has also been found that once the precursor effluent is collected in the sump, useless residues contained in the precursor effluent will precipitate over time. In addition, the precursor material and the vapor used to evaporate the rigid-drive material also undergo phase separation. Therefore, the precursor material conforming to the process quality standard can be retrieved from the storage tank and reintroduced into the substrate processing system, and it is preferable to introduce a module. The condition of the effluent collected in the tank can be monitored using an inductor to determine if the precursor material meets the quality standards. Further, when the precursor substance is converted from the gas phase to the liquid phase, several methods known to those skilled in the art can be used. The state of the precursor material is related to one or a combination of pressure or temperature. For example, DEZ is a vapor phase at 60 ° C and can be converted to a liquid phase by a heat exchanger (preferably at -25 (: working) to effectively cool it. The present invention discloses a precursor material (more Good for pure precursors, best for DEZ) After this phase transition, the impurities in the precursor will precipitate due to their physical weight. These impurities will not move afterwards, only the recovered precursors (preferably It is transferred back to the gas phase). If the precursor material is in the liquid phase, the useless residue will accelerate. 12 201017720 In another embodiment, in order to achieve the phase from the gas phase to the liquid phase, for example, a vacuum pump can be used to decompress. Or use a cooling device to reduce one of the temperatures or a combination thereof. As mentioned above, it is better to additionally use a filter to ensure that the precursor material meets the process quality standards. Since the material flow control does not need to be very precise, it can also be used sturdy. Apparatus and material flow control device. φ, another aspect of the present invention provides a method of operating the aforementioned system of the present invention, and a precursor material used in a substrate processing system The method includes the steps of: a) transferring a rigorous material effluent generated by one of the foregoing processing systems to at least one sump; and b) transmitting a precursor material that meets the process quality standard to the processing system Inside one of the modules. As described above in relation to the system of the present invention, the precursor material effluent collected in the storage tank can still meet the process quality standard, or can be regained after a period of time, such as the precipitation of useless residues contained in the precursor substance effluent. The standard of process quality. The precursor material collected in the tank that meets the quality standards of the process can then be reintroduced into the system. It is preferably passed through a module, preferably via a container for storing the precursor material, or via a line connecting the container to the substrate processing system. The preferred embodiments and advantages of the method according to the present invention correspond to the system of the present invention as described above, and can be easily understood by those having ordinary knowledge. More specifically, all or preferably a portion of the precursor material disposed in the module is transferred to the reservoir. The advantage is that the useless 13 201017720 2 = still in the module 'will not be transferred into the tank or block the system of the hair in the embodiment, when the precursor discharge is transmitted, the system::, evaporation or loading One of or a combination of gas or the like is carried out. In another preferred embodiment, the storage temperature is additionally reduced, or a combination thereof. As explained before, the advantage is that = the phase transition of the precursor material causes the useless residue to accelerate the sink. In another preferred embodiment, the precursor effluent is retained in the sump until all or most of the useless residue has settled. In another embodiment, the precursor effluent is subjected to additional enthalpy. Preferably, the precursor effluent is filtered prior to reaching the sump and/or filtered after the precursor material leaves the sump. A number of other advantageous embodiments of the invention are also provided in the scope of the appended claims. [Embodiment] The foregoing and other objects of the present invention will become apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a system 1 for recovering precursor materials used in a substrate processing system in accordance with the present invention. The system 1 comprises two modules 2, wherein the module is a plasma-assisted chemical vapor deposition process module 21 for depositing zinc vapor; the other module is a clean precursor material storage container 2 2 Preserved precursors from 201017720. The module 2 is connected to a storage tank 3 and a cleaning system 4 via a series of lines 5, 6. The purge system is basically used to burn precursor emissions. In addition, a first-class delivery control device 9 is provided in the pipeline connecting the modules, the storage tank and the cleaning system. The flow control device 9 is for guiding the precursor discharge to the reservoir 3 or to the purge system 4. In this embodiment, the precursor effluent is dimethyl zinc (DMZ) or diethyl zinc (dez). An inductor (not shown) can be used to measure the parameters to determine where to route the precursor material, such as the quality of the precursor effluent (ie, the amount of unwanted residue) and / or the amount of precursor material effluent currently stored in the tank 3. The flow rate of pipelines 5, 6, and 7. A plurality of valves 8 are provided therein for controlling the connection of the precursors via the other line 7 to the troughs 2.2 storing the clean precursor material.匕ϊ 'Electrical-assisted chemical vapor deposition process module 2. Bu clean == storage container 2 · 2 pipeline to the storage tank 3, and return from the storage tank 3 clean precursor material stored in the crying attached (four) ^ Tube _, with most suctions. 0, used to further remove the useless residue in the precursor material: the quality of the second r = two is lower than the 30,000 of the water green t storage tank - the precursor material discharge of the rigid drive material discharge, that is, the induction of the system The mass effluent is found to contain too much useless residue, and it is not possible to use the 15 201017720 sump and filter to properly remove the residue, then directly recirculate the precursor effluent via line 6 and using flow control device 9. Guided clearance reduction system 4. If the precursor discharge stored in the tank 3 has reached its capacity limit, the redirection will also occur. When almost all of the precursor substances placed in the module 2 are transferred to the storage tank 3, the module cleaning is performed. The waste generated during the cleaning cycle mainly contains useless residues, so it is sent directly to the purge reduction system 4. On the way to the storage tank 3, the first filtration of the rigged substance discharge is carried out by the adsorption type transition unit 10 in the line 5. The pressure in the reservoir is maintained below atmospheric pressure to phase change the precursor f effluent to form a liquid state, thereby causing precipitation of unwanted residues. The precursor material is then returned from the reservoir to module 2.2 and passed through the filter 1 in line 7 twice. Then, the precursor material flushing system, which can be used in the module 2, for example, the pipeline (1) between the storage container 22 for cleaning the precursor material and the electropolymerization assisted chemical vapor deposition process module for depositing zinc oxide, and the process module itself, Take the heavy (four) to help the precursor material _ balance. Since the utilization rate during flushing is 0%, if the system is used, the material is usually directed to the purge reduction system, and now it can be collected by the reservoir. As a result, a large amount of precursor material can be recycled, so that the precursor material can be significantly saved. The present invention is shown and described in detail with reference to the accompanying drawings and claims The invention is not limited to the embodiments disclosed above. It will be appreciated by those skilled in the art that the present invention may be modified in other embodiments as disclosed in the appended claims. The word "comprising" does not exclude other elements or steps in the scope of the patent application. The indefinite article "a" does not exclude a majority. Certain measured values in mutually different sub-items do not indicate It is not possible to use a combination of these measurements to achieve a more advantageous effect. Any reference number in the patent application I! should not be construed to limit the scope of the request. [Simplified illustration] Figure 1 is the first BRIEF DESCRIPTION OF THE SYSTEM OF THE INVENTION The main component symbol description 1 : precursor material recovery system 2: module ❹ 2.1: plasma-assisted chemical vapor deposition process module 2.2: clean precursor material storage container 3: storage tank 4 : Clearance reduction system 5: Line 6 · Line 7: Line 8: Current limiting device 9: Flow control device 17 201017720 ίο: Adsorption filter; and 11: Pipeline
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