TW201015581A - Non-volatile storage device and control method thereof - Google Patents

Abstract

This invention supplies a wear-leveling storage device and control method thereof. It statistics the erase time of all blocks in storage device in order to manage the distribution of blocks' erase time, and then uses the standard deviation to decide when to erase and the frequency of static wear-leveling. By doing this, it is effective to avoid excessive static wear-leveling which reduces accessing rate and life-time of the flash storage device. By recording the total erase time of flash storage device and the erase time stamp of blocks, it is easy to judge blocks which storage static data, and then remove the static data to blocks which have the highest erase time so as to release the original blocks which storage static data and avoid improperly static wear-leveling.

Description

201015581 IX. INSTRUCTIONS: [Technical field to which the invention pertains] The present invention relates to a secretive age-setting device, and more particularly to a bribe storage device. The present invention relates to a method for static erasing of a type of miscellaneous reading device. [Prior Art] The non-volatile (Non-WatUe) age is now widely used in computer systems and portable electronic devices. 'The characteristic is that even if the power supply is interrupted, the data stored in the memory will not disappear, and the power will be re-powered. After that, the data in the memory can be read again. Flash memory (Flashmemory) is a kind of non-volatile storage element. Because it uses flash memory as a storage medium, it has the advantages of low power consumption, high access rate, shock resistance and light weight, so it has gradually replaced some traditions. The hard disk device is widely used in the computer system and the gambling unit of the machine type electronic device. There is a memory cell array in the flash memory, and the array includes a plurality of memory cells (_machi). Fast flash (four) Xiang memory cells to store the charge, thereby recording the person's information. The memory cell array in the flash memory is planned into a plurality of memory blocks, each of which is a unit of _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The page is the unit for reading and writing data in the flash memory. In the process of executing the update data on the flash memory, the memory of the memory block on the block of the data is erased by the memory of the memory block, that is, the memory cell will withstand a high voltage to charge the wrong charge. However, the action of the memory cells to withstand high voltages to release the charge will abrade the material strength of the memory cells and cause the aging of the memory cells, making it impossible to save the amount of charge. Since the flash memory device reads the data on the memory cell array by sensing the amount of charge on the memory cells, if the memory cells cannot properly store the effective charge amount of the relevant data when reading the data of the flash memory, The wrong data will be read. , 201015581 Generally, the stored data on the memory of the door can be divided into the data of the dynamic data state, such as: the configuration list of the building, the dynamic data will be updated in the block of the recalled area; Very few, even financially updated materials, such as the system's code, fine-handle handles, these (four) after the record of the ship, usually rarely, or even will not be updated. Therefore, the dynamic data _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The memory block that calls the premature job to make the limit is the damaged block in the flash memory. ❿ - The life of _ memory _ is based on its erasable number of references, the pass f is between 10,000 and 10,000. If there is no average block in the hybrid domain _, some of the dragon blocks will reach the life threshold earlier than other body blocks due to over-production wear. This lion gamble caused the flash to flash. The health device could not provide the stored materials because of the excessive damage of the block. However, there are still some memory blocks, such as the cake state data touch block. Has a very long service life. . Therefore, in order to give full play to the service life of the flash memory, the prior art proposes a technique for erasing the average of the flash memory device, so that the data can be stored in a fast domain, and the memory blocks in the flash memory 11 can be averaged. Let the erased times (lifetime) of each memory block be close, thereby making the flash memory play its due life. The θ erase averaging technique includes dynamic erase averaging and static erase averaging. Dynamic erasing average mainly = when there is data to write human resources, in the (four) save the freshest - the least number of workers in the 5 memory blocks to record the data to avoid the use of certain memory blocks . However, the dynamic erase averaging can only be divided into averaging, and some memory blocks in the flash memory are occupied by static data. As mentioned above, since these data are rarely or never updated, they are Wei data accounted for (4) the ship was rarely used for new data writes. So even if the dynamic erase averaging technique is used on the flash memory, there will still be an uneven use of memory blocks. 201015581 Therefore, in addition to the secret erase of the average technique, the amount of static silk is averaged to solve the problem of static data occupying the memory block to achieve better erase average effect. The static erasing average technology age is when the data is written, or (4) when the m is stored, the static data is moved from the originally occupied memory block to the memory block with the highest erasure frequency in the flash memory, and then the original memory is erased. Block to release the memory block that originally stored the static data for the writing of new data. In this way, the memory block occupied by the static data with a high number of erasures will be given a lower (4) chance because it stores the static cake, and the county state data is finely erased & lower __ The block 'will be released (four) to write one. Therefore, the Φ memory blocks of the entire domain memory will tend to be used evenly, so that the erased times of each memory block can be close to the number of erasure times, and the life of the flash memory is fully utilized. . However, when performing static erase averaging, it is necessary to first identify which of the memory blocks stores static beakers, and then correct the operation; —The ship has the technology to erase the static data of the memory block. Because the static data is rarely updated data, the memory of the static data is relatively old, and the miscellaneous is low. There is still a risk in such a judgment method. Except that the domain low-lying block is after the static erasing average is performed, it is possible to store the data, but since the number of erasures of the memory block is still low, Therefore, the dynamic material will be treated as a static dragon. #Perform the static erase averaging action® again>, that is, move the dynamic data stored in the memory block with a lower erase frequency to the high erase frequency. The hidden block ’ increases the chance that the erased block is erased and the erased block of the erased-input number is more serious. In addition, the static erase is performed on the average, and the action of performing the static miscellaneous movement (the data is written into the new memory block and then the old memory block is erased) is not the action that will be performed when the county data writer (4) is stored. Therefore, the time spent on data transfer and the wear caused by the silk memory block are considered to be an additional burden due to static erase averaging. Therefore, if there is no good management system, the static erase of the average job is too frequent, the improper static I, the erase average will affect the access efficiency of the flash memory and can not effectively use the flash memory 201015581. life. In the prior art, there are several methods for judging when to perform static erasing averaging: a method of recording the erasure times of all memory blocks as disclosed in U.S. Patent No. 6,230,233, and finding the highest erasure number of the suffix block and the lowest The static erase averaging is performed when the number of erasures between the memory blocks of the erased count differs by a predetermined value. Another is to determine the execution timing of the static erase averaging based on the difference between the number of erasures of the memory block and the number of erases of the average number of erases of all the blocks. Still another method, such as the flash memory disclosed in U.S. Patent No. 6,732,221, performs a static erase operation after a predetermined number of erase operations.

However, although the above method considers that the flash memory may be unevenly used after a period of writing and updating operations; however, only the erasure frequency difference between the memory blocks and the memory area are used. The difference between the number of erasures of the block and the number of erasures of the average erasure times of all the blocks, and the number of erasure actions that have occurred to determine the timing of performing the static erasure average, cannot truly grasp the distribution of the erasure times of the memory block. Case. [Summary of the Invention] In order to better manage the static erasing technology, it is effective to effectively extend the life of the flash memory. The present invention provides an average of the traversable filaments, which can be based on the wipe of all memory blocks. In addition to the recorded status, the appropriate Wei erase action is performed to effectively improve the impact of the existing non-volatile memory device on the lifetime and access performance of the flash memory during static erasing. This is issued by the Japanese-Sakisaki---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- Static data. Since the dynamic data is often updated, the data stored in the memory block is short, and the average of the touches can be selected to avoid the selection of the erased times and the storage of the data for a long time. Memory block. In this way, the static block is removed, and the mine is moved to a higher memory block. 201015581 The present invention provides a method for performing static erasing averaging, which uses the erasing times of each memory block in the statistical flash memory to monitor the distribution of the erasing times of the memory block, and then judges the standard of the erasing frequency of the memory block. The difference in size, adjust the execution frequency and range of the static erase average, so that the erase count of most memory blocks can be close to the average of the erase times of all memory blocks. As a result, the effect of the static erase on the flash memory access performance is reduced, and the lifetime of the flash memory is fully utilized. To achieve the above object, the present invention discloses a method of controlling a non-volatile memory device. The control method includes the following steps: first, counting the erasure times of all memory blocks; then calculating the standard deviation of the memory block erasure frequency distribution according to the Φ statistical result, and determining the static erase average by the standard deviation mode. As a further improvement of the present invention, the mode of erasing the averaging in the control method of the non-volatile memory device of the present invention further comprises the steps of: first, at least setting a threshold value of one standard deviation; and then determining the distribution of the number of erasures If the standard deviation is greater than the value of the door frame, if it is greater than the value of the door building, a large number of memory blocks for storing static data are exchanged after performing a few erasing actions; otherwise, a memory area for exchanging a small amount of stored static data after performing some erasing actions is not wiped. Except for the average action. To achieve the above object, the present invention discloses a non-volatile memory device. The storage device comprises a plurality of memory blocks and a static erasing averaging device, wherein the static erasing averaging device comprises: a storage unit having a record block rushing read; a control element for storing The number of erasures of all the cage blocks is obtained in the T unit, and the standard deviation of the erased number distribution is obtained by rooting the number of erasures, and then the degree of static erasure is performed according to the standard deviation. In addition, the control unit included in the non-volatile memory device of the present invention is further configured to set a standard deviation threshold value and the control unit determines the degree pattern of performing static erase averaging: determining that the standard deviation shirt is difficult; If it is less than, the job line - she exchanges the first block of the block data of the static data after the action, if it is greater than, then performs the second number of erase operations and then exchanges the second block of memory blocks for storing static data. 201015581 Compared with the prior art, the effect of the invention is to fully exert the non-volatile storage county-right degree, which can more effectively improve the non-volatile 4== standard tender erased average process of the six-material "h mis-performance" Avoid excessive erasure of the average increase in memory rights, but also the use of lions to save (four) use of the implementation method [Embodiment] For the correction of the effect of static erase averaging, the present invention uses statistical methods to control the reduction & The distribution of the narration, the way the money is recorded on the average. The standard deviation in the measurement of the most common statistical _ degrees (she fine disp_) in the ages of the squad, which can reflect the degree of dispersion between individuals within the group. Simple Said that the standard deviation is a value from the average to the degree of heterogeneity - _ quantity concept. - a standard deviation, which represents the majority of the number of 悄 悄 歓 歓 歓; ^ The formula for the standard deviation of a cluster is:

N

N j)2 where xl,...,xN are all real numbers, and the algorithm for the mean is:

Xi gives {2,3,4,6'7,8} and {0,1,3,7,9,10} a set of two numbers, the average is 5, but {2,3, The standard deviation of 4,6,7,8} is 2.16 (2.160246899469287), and the standard deviation of {〇,1,3,7,9,1〇} is 3.87 (3.872983346207417). Although the average value of the two sets is 5, the standard deviation of {2,3'4,6,7,8} is small, indicating that the distribution of each value is concentrated, and the standard deviation is larger. The distribution of the values is relatively scattered. The present invention utilizes this statistical method to monitor the distribution of the number of times of the smearing of each memory block by the procedural arrangement of 201015581. Next, the distribution of the number of erasures, such as 2q memory blocks, is followed to illustrate the method of performing static erase averaging in the present invention. " Kiss assumes that the first distribution of the number of erasures for each memory block is as follows: Memory Block (BA) 1 2 3 4 5 6 7 8 9 10 Number of erasures (EC) 50 45 45 55 50 45 50 55 50 55 Memory block (BA) 11 12 13 14 15 16 17 18 19 20 Number of erasures (EC) 50 45 55 50 45 50 50 45 55 55

❹ Convert the above table into the distribution of the number of erase blocks of each memory block as shown in the figure below. It can be found from the figure that since the erased times (Erasecount, EC) of each memory block are quite close, the curve undulating from each point is quite small, that is, the memory blocks are averaged and used. By counting the number of erasures of each sigma block, the average value is 50 and the standard deviation is 3.973597. The relationship between the number of erases and the number of blocks (Block Count, BC) is shown in Figure 2. The number of memory blocks for each erasing can be more clearly seen in Fig. 2. Most of the memory blocks are concentrated near the average number of erasures of 50 times. If the number of erasures of each memory block is as follows, the second distribution table is as follows: Memory block (BA) 1 2 3 4 5 6 7 8 9 10 Number of erasures (EC) 75 .35 45 40 70 55 40 65 25 30 Memory Block (BA) 11 12 13 14 15 16 17 18 19 20 Wipe Times C) 50 65 70 45 30 50 55 75 60 25 Convert the above table into the memory block. 3 is shown. It can be seen from Fig. 3 that the number of erasures of each memory block in 201015581 is distributed, and the undulation of each point is larger, and the surface of the ship is less than expected. In the statistics, the number of erasures of each block is t Γ. The level of contact is 5〇.25, and the county is 16.5_82. The relationship between the number of transfers and the number of memories 5 _ 〇 also __, as shown in Figure 4. It can be seen from Fig. 4 that the memory block y is distributed over the __ slit, and it is not read to the confession, indicating that the memory block is used rather unevenly.

In the light of the above, a large standard deviation represents a large difference between most of the values and their average values; - she is very poor, and this Wei recorded close to the flat touch distribution 2 with a standard deviation of 3.97359 ' The distribution of the readings of the charm blocks is set to I, and the standard deviation of the second distribution is 16 marriages, which indicates that the distribution of the number of erasures of each memory block is relatively scattered. Therefore, the distribution of the number of erasures of each memory block in the flash memory can be objectively placed as a towel or recorded by the phoenix control, and the set of the erase block of the It block can be judged according to the standard deviation. Towels (or distracting thieves) guess the degree of miscellaneous wiping. Then take 1000 5 recall blocks, the number of memory cells is _ 〇 times as an example, W shows how (four) the standard deviation of the implementation of different degrees Static erasing average. Referring to Figure 5 and Figure 6, the threshold value of the memory block is set to at least one standard deviation threshold. In this mode, two standard deviation thresholds are sighed, assuming §1=0.5%, δ2=1% and δ3=1.5% two standard deviation thresholds, and the number of erasures is %, 100, 150 erasures, ie 0〇〇〇χ〇.5% = 50 ' ι〇〇0〇χ1%:=1〇〇,1〇〇〇〇χ1 5% = 15〇, used to perform different degrees of static, erase the average lag. Preset three fresh touches Next, the system produces four standard deviations of the number of erasing the actual number of pieces of the ship, to perform the corresponding degree of static erase averaging. The above-mentioned average value and the fresh-striped calculations ^, the erasing times of all the subtraction blocks of the lining can obtain the average value M of the __ erased at this time, and the standard deviation δ Γ. Thus, the standard m can be touched. The human-action area is used to perform the appropriate static erasure averaging. 201015581 If the standard deviation δ2 of 1% is the expected value, that is, it is desirable to control the erase count of most memory blocks to the average of the erase times. Μ Addition and subtraction between 100 ranges, so if the number of erases of the memory block deviates too much from the expected value, the control element will perform a corresponding degree of static erase 're-control the number of erases on the average of the number of erases. If the standard deviation δ produced by the statistics at this time falls into the first region, that is, the number of erasures of most memory blocks is distributed within the range of the average value plus or minus 5 times. It is not necessary to perform the action of static erasing averaging. Since the standard deviation δι· falls into the first region, it not only exceeds the standard deviation expected value range of 1%, but also indicates that the distribution of the number of erasures of the memory block is fairly average, and each memory Area The ❹

The number of erases is more concentrated than the desired target, so there is no need to perform a static erase action to increase the burden on the flash memory. If the standard deviation δι· falls into the second region, that is, the number of erasures of most memory blocks is distributed within the range of the average value Μ plus or minus 100 times. Since the number of erasures of each memory block has approached the standard deviation δ2=1%_value, it is possible to perform a static erase averaging in a modest and small amount to improve the unevenness of the memory blocks. The difference (4) is an increase in the feeling of wiping out the unevenness between the ships. Qing, at this time, the static erase averaging execution system can move a small number of memory blocks storing static data after a number of erase operations (assuming Ε1 continuation action) (assuming Β1) will be explained in the following paragraphs. Statically erase the average action). In this way, in the case where the distribution of the number of erasures of the memory block is severe, the mode of controlling the number of erasures of each memory block is moderately controlled, and excessive static erasing is avoided, and unnecessary erasure is added. Actions and affect flash memory access efficiency. The right standard deviation δι· falls into the third region, that is, the number of erasures of most memory blocks is the average value Μ plus or minus 150 times. At this time, the standard deviation & has exceeded the standard deviation of = (9), ^ static erase averaging can be performed more frequently than the standard deviation _ the second region, so that the average of each note - the block is reliant, to (4) each face The situation in which the block's suspicion is distributed is the same as that of the memory block. Therefore, the scale can be set to statically erase the execution of the plaque for several erasing actions (assuming a detailed erasing action, Ε2< job shifts several 201015581 memory blocks for storing static data (assuming B2, B2 > B1) Therefore, in the case where the distribution of the erasing times of the memory blocks is less uneven, a higher static erasing average is performed, so that the memory blocks can be used evenly. If the standard deviation δ is in the third The static erase averaging performed in the region still cannot effectively control the situation in which the erasing times are not average. The fourth (the fourth) red area, that is, the erasing frequency of the large recording memory block will be distributed over the average value Μ plus or minus 150 times. Therefore, when the standard deviation δ falls into the fourth region, the execution of the static erasing average can be set to be after a few erasing actions (assuming Ε3 erasing actions, Ε3 <Ε2<Ε1) Move several memory areas that store static data. φ is set to Β3 'Β3 >Β2>Β1). By performing static erasing averaging on a large scale and frequently, the memory blocks are used on average, and the life of some of the dump blocks is exhausted early, which affects the maximum effective life of the flash memory. . The above provides three preset standard deviations (δ δ δ2, δ3) to perform different degrees of static erase averaging' and the implementation of different degrees of static erase averaging (ει, Ε2, Ming and moving blocks) (B1 Β2 Β3) However, the value and number of standard deviations, the execution frequency of the static erase averaging, and the number of moving blocks are all adjusted according to the requirements and _storage (10) characteristics, which are not limitations of the technical method of the present invention. 4 4 ^ For the roots of the standard record, the dissatisfaction (4) erase the average wire ® (please together with the 5). The first step is to initialize the storage device, preset the standard deviation door broadcast value (4) V step >) and Get all the notes in the heart of the class, and the number of erases with the block (step _3). Then, the number of erasures of all the blocks is calculated as the standard deviation & (step_, and the static erasure of the scale is removed (step S107), then the first degree static erasing average is performed, and the second erasing is performed. The flute memory block (step S1〇9); if judging sl < Sr, step sm), ! hit the first degree static erasing average, m ^ s sii9), if judging S2 < Sr is silly, the father changes B1遽 块 block (step E2 秘秘心心 ▲ - (step S127) 'then perform a third degree static erasing average, , L father replaces B2 memory blocks (step SU9); if judged δ Γ > δ3 ( Step 201015581 The cow performs a fourth degree static erasing average. After the E3 erasing action, the B3 pieces are exchanged and EQ>E1>E2>E3=, and the number of times is __ erasing times. The difference between the static erasing and the averaging of the degree: the degree of static erasure of each memory block is used, and the average life of each memory block is used, and the different energy can be performed according to the actual distribution of the number of erasures = The impact eraser averaging can improve the existing static erase averaging technique for flash memory access efficiency. The flash memory described in the 7 towel is effective. The flash memory includes a control unit, a memory, and a flash memory. The child can be in the control unit or externally connected to the control unit to listen to the recording flash memory. The total number of erasures and the erasure time of the memory block, wherein the control unit includes a control unit for obtaining the number of erasures of all the memory blocks from the memory and calculating the number of erasures according to the number of erasures. Poor, (4) mosquito execution touches the average _ degree; _ unit can also get the memory block's last erase time mark from the memory and determine the most recent erasure time mark the earliest enchantment and ride the record cage The action of averaging the average age. The static erasing averaging moves the static data in the memory block to the new memory block, thereby releasing the face block that is less erased due to the static material occupation. Before performing the static erase averaging, it is necessary to confirm that the data stored in the memory block is static data, and then the data of the state of the wire can be traced to the silk, and the memory block of the lesser and higher is called. Let (10) age' thereby slow down the number of facets with higher erase times: Otherwise 'if static erase is performed, the dynamic data stored in the memory block with less erased times is moved again to The memory block with a higher erase frequency will increase the memory block with a higher erase frequency and be erased again, which will make the higher ship block wear more serious. Therefore, the present invention also provides A method for judging whether the data in the memory block is static data, wherein when the static erasing average is performed, the memory block storing the static data is released by the positive handle, and the static data is moved to the memory area with a higher erasure frequency. Block storage As shown in Figure 7, it is a flash memory that can perform an adjustable static erase averaging. The flash 201015581 f memory 1 is composed of a controller 13 and a flash memory Zhao 15. The controller i3 includes a counter 131 responsible for == division times, a memory 133 (or a memory 17 external to the control unit) for recording the total number of erasures of the flash memory, and a control unit 135. When j refers to Z: and Figure 8 'The present invention for the handle recall block in addition to recording the number of erasures, while reading-erasing time to record asetimestamp) how many times the material memory block experienced erasure == The wipe _ _ ____ 丨 _ = a few ¥ m lasheng. When _ 存 难 i (four) 记 犹 录 = 加 加 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the operation of the ball control block in the thin i, the total number of erases after the accumulation is recorded to the error saver 133 (or (7) is also in the redundant area of the memory block in which the erase operation occurs. In the relevant booth of the memory block of the erasing action, as the memory = wipe '^ ' 8 the number of erases of each memory block is recorded in the redundant area (sparefieId) of the memory block in which the erase operation occurs. , or the corresponding position of the logical/physical address conversion table. ° The difference between the 2 counts of the gates (4) the total number of erases and the number of __ erased time marks ,, the memory block is known at the end After being erased, how many times have you experienced the storage of the ship's age block? This way, you can see how long the memory of the memory block has not been updated. So you can pass the static erase average. The above method picks up the data block that has not been used for a long time, and enters the sulphur-weaving block. The total number of wipes is the difference between the number of wipes and the number of blocks. It can be obtained through the control unit or an arithmetic circuit. Please refer to Figure 9 and Figure 10. Five memory blocks B〇, m, B2, B3, and B4 are used to describe the static erase average. The time to statically erase the average is done,

The action of static erasing averaging is explained, and the timing and process of actually starting the static erasing averaging of the present invention are performed as described above. X 201015581 As shown in Figure 9, the erasure times Ec of the memory blocks BO, B1, B2, B3, B4 - are all 〇, and the first data D, the second data D2 and the third data D3 are respectively stored in The memory block B0, the memory block B1, and the memory block B4, and the memory blocks B2 and B3 are empty memory blocks (freeblocks). Since the operation of writing and updating data to the flash memory is unpredictable by the system side, in order to facilitate the update action of the static/dynamic data, the known first data D1 and the second data D2 are preset as dynamic data. Frequently updated data), the third data D3 is static data (less frequently updated data). Then, the system starts the operation of updating the data. First, the first resource D1 of the memory block B is updated, and then the control unit writes the updated first data di into the memory block B2, and then erases the memory block B0. At this time, the counter on the control unit adds one to the total erasing frequency of the flash memory and updates the status message of the block B0, including the erasing frequency ec〇=i of the recording memory block bo and the erasing erasing time mark. ET0=1 (that is, the total number of erases of the current flash memory). As mentioned above, the two records of the erase count EC and the erase time mark ET can be stored in the logical/entity conversion table, or the redundant area of the memory block. The system then updates the first data D1' so that the control unit writes the updated first material D1 to the memory block B3' and then erases the memory block B2. At this time, the counter on the control unit adds one to the total erasing frequency of the flash memory, and updates the status message of the memory block B2, the erasing number EC2=1 of the memory block B2, and the erasing time symbol ET2=2. According to the above mode, the first data D1 and the second data D2 are successively updated. When the total erasing frequency of the flash memory reaches seven times, the erasing frequency of the memory block B〇 is EC〇=2, and the erasing time symbol ET0= 4. The number of erasures of the memory block is EC1=2, the erasing time mark ET1=7; the erasing frequency of the memory block B2 is EC2=1, the erasing time mark ET2=2; the erasing times of the memory block B3 EC3=2, erasing time mark ET3=6; and erasing frequency of memory block B4 EC4=〇, erasing time § number ET4=0. It can be found that the memory block B4 has not been erased after the total number of erasures of the flash memory reaches seven times, so the data stored in the memory block B4 has not been updated yet. In order to make the memory blocks in the flash memory evenly used, the static erasure level 201015581 is performed at this time, and the third data 〇3 in the memory block B4 is moved to the empty memory block with the most erasure times. The memory is placed to release the memory block B4 and reduce the chance of erasing the most erased memory blocks. Then, the third data D3 is copied from the memory block B4 to the memory block B3, and then the status information of the memory block B4 and the updated memory block B4 is erased, the erasure number EC4=i, and the erasure time symbol ET4 is erased. =8. Then, referring to FIG. 10, after the first static erasing average is performed, the system successively updates the first data D1 and the second data D2 'until the total erasing frequency of the flash memory reaches 14 times' will be executed. The second static erase average. At this time, the erasing frequency of the memory block B〇 is EC〇=3, 抹 erasing the time mark ET0=13; the erasing frequency of the memory block Εα=4, erasing the time mark ET1-14 'memory block B2 Number of erasures EC2=3 'Erase time mark ET2=12; erasing frequency EC3=2 of memory block B3, erasing time mark ET3=6; and erasing number of memory block B4 EC4-2 'wipe Except the time stamp ΕΤ4=1〇. The memory block with the least number of erasures is the memory blocks B3 and B4', and the number of erasures is twice. At this time, the control unit is based on the difference between the erasing time stamp of the memory block and the total erasing number, and the value indicates how many times the flash memory device performs the erasing of the memory block in the memory block. In this way, it can be known which memory block has not been erased for a long time, and the memory block storing the static data is correctly selected and released. Because, if there is a piece of data after multiple flashes, save and erase _ actions, but not updated, the possibility of riding the data as static data is extremely high. Therefore, the present invention uses the difference between the erase time mark of the memory block and the total erased count to determine whether the data recorded in the memory block is static data, and can avoid the number of times that the erased number is small but stored. The memory block of f material +, the empty memory block with a high number of erasures, and the chance of erasing the memory block with a high erasure frequency. Therefore, when the memory blocks B3 and B4 are twice erased, the same erase block has the least number of erase blocks in the memory block. Then, according to the difference between the erasing time mark of the memory block and the total erasing time, the memory block for performing static erasing is selected, and the total erasing frequency of the flash memory is I4, and the memory block B3 The erasing time is marked by Yang 2, so the difference between the erasing time mark of the memory block 201015581 B3 and the total erasing number is B3AEC=14-6=8; the erasing time of the memory block B4 is ET4=6, Therefore, the difference between the erase time mark of the memory block B4 and the total erase count is B4AEC=14-10=4. According to the difference between the two, it can be known that the memory block B3 is older than the memory block B4 for a long time, that is, the data in the memory block B3 is more than the data in the memory block B4. It has not been updated for a long time, so the data in memory block B3 is more likely to be static data. Therefore, when the static erase averaging is performed, the third data D3 in the memory block B3 is copied to the memory block m having the highest erased number, and then the memory block B3 is erased. In this way, the memory block with less erased times due to the storage of static data will be released for use, and the memory block B1 with higher erase frequency can reduce the chance of being erased due to the storage of static data. . However, if the second static erasing averaging is performed, the erasing time of the memory block using the memory block is not used, and the differential memory state of the memory is selected to erase the average memory block. Copying the first data 01 in the memory block B4 to the memory block B1+ with the higher erase frequency, and the first data D1 is the dynamic data (previously known), and it is likely to be in the lower-under system. The writer's homework was updated. As shown in FIG. u, if the second static erasure averaging is performed, the first data D1 of the memory block B4 is copied to the memory block m with a higher erase frequency, and then the reward is better and newer.帛-data m, the average static action of the knot pattern is not only the number of erasures of the memory block bi with a higher number of times, but also the number of erasures of the memory block B1 (EC1) =5). Therefore, when performing static erasing averaging, whether the data of the scaled block towel on the right is (4) will be able to move the dynamic material to the erased block, and the memory block is more serious. It is worn out and reaches the end of life earlier than other memory blocks. μ Refer to Figure I2 to erase the flat touch scorpion in this state, and to erase the average action flow. As shown in the flow chart of the timing and degree of performing static erasure averaging in Fig. 6, the flash memory is arbitrarily wiped out according to the wiping time of each memory block, and the static erasing average is appropriate at the age of the age. Then, when the static erase averaging is performed, the memory block having the lowest erase frequency in the flash memory is found first according to the record of the number of erasures of the blocks of the memory block ('Sp. S201). Then, through the calculation of the software or the hardware circuit, the AEC of the memory block with the lowest erased frequency (the difference between the erasure time stamp of the memory block and the total erased count) can be known (step S203) 'to facilitate judgment The data of that memory block has not been updated for a long time. Then, according to the number of memory blocks that need to be performed according to the degree of static erasing, the data in the memory block with the lowest erased number and the highest memory block is copied to the empty memory block with the highest erasure frequency (step S2〇5), if The empty memory block with the highest erasure frequency is not enough. The job order is used to erase the empty memory block with the second highest number of times. Then, the copied block is erased' and the flash memory is updated according to the occurrence of the erase action (the S2G7 is tilted). After updating the total erased seam, the number of erases of the memory block of the lion and the erase time mark are recorded (step gamma 9). After the erasing times and erasing time marks of the memory blocks of the minimum erasing times are recorded, it is judged whether or not the recording ship on which the data transfer is to be performed is completed (to S211). The number of memory blocks (4) is shifted, and the above steps are repeated. 'The data in the memory block having the lowest number of erase erases is executed (the erase level X according to the static erased step X is step S213). If the number of memory blocks that need to perform data movement has been completed, the action of static erasing is ended. In summary, the present invention analyzes the number of erasures of all memory blocks by statistical methods to control the distribution and navigation of the ship blocks, and then the average timing and degree of the mosquitoes to listen to the average #This avoids excessive execution of static erase averaging It affects the access rate of the flash memory and the expected lifetime. Furthermore, by recording the total number of erasures of the flash memory and the erasing time of the memory block, the magnetic block can be saved and stored in the memory block of the fresh data. The empty memory block releases the memory block from which the static data was originally stored, thereby avoiding the occurrence of improper static erasing actions. The above description is only intended to be illustrative of the specific embodiments of the invention, and is not intended to limit the scope of the invention. Variations or modifications that can be easily conceived within the scope of the invention are encompassed by the scope of the patents that are within the scope of the invention. For example, the above is a flashing device as an example, but one of ordinary skill in the art can easily think of that the flash memory is a non-volatile memory. In fact, the present invention is also applicable to other Types of non-volatile memory, such as EPROM (Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), PRAM ( Phase-change random access memory, MRAM (Magnetic Random Access Memory), FRAM (Ferroelectric Random Access Memory).

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing the distribution of erase times corresponding to the first distribution of the number of times of erasing the memory blocks in the specific embodiment mode of the present invention. 2 is a diagram showing the relationship between the number of erasures corresponding to the conversion and the number of memory blocks in the first distribution table of the erasing times of each memory block in the specific implementation mode of the present invention. Fig. 3 is a diagram showing the distribution of erasure times corresponding to the conversion of the second distribution of the number of times of erasing the memory blocks in the specific embodiment mode of the present invention. 4 is a diagram showing the relationship between the number of erasures and the number of memory blocks corresponding to the second distribution of the number of erasures of each memory block in the specific implementation mode of the present invention. Figure 5 is a diagram showing an example of a preset different standard deviation of the present invention. Fig. 6 is a flow chart showing the execution of different levels of static erase averaging according to different standard deviations in a specific embodiment mode of the present invention. FIG. 7 is a structural diagram of a non-volatile storage device of the present invention. FIG. 8a is a schematic diagram of the architecture of a memory block in a specific implementation mode according to a specific implementation mode of the present invention. ° This is a hair _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the physical implementation mode, the execution is performed in the present embodiment. In the implementation mode, the second static-de-equalization average sound is performed. 201015581 FIG. 12 is a flow chart of the static erasing average in the specific implementation mode of the present invention. [Main component symbol description] 1 Non-volatile memory device 13 Controller 131 Counter 133 Memory (17 memory) 135 Control unit 15 Flash memory

Claims (1)

201015581 X. Patent application scope: 1. A control method for a non-volatile storage device comprising a plurality of memory blocks, the control method comprising the steps of: counting the number of erasures of all memory blocks; and calculating according to the statistical result The standard deviation of the erased number distribution, and the mode of static erase averaging is determined by the standard deviation. 2. The control method according to claim 1, wherein the mode of erasing the averaging comprises the steps of: at least presetting a threshold value of one standard deviation; and determining whether a standard deviation of the distribution of the erasure times is greater than the threshold If the value is greater than the threshold value, then a large number of memory blocks storing static data are exchanged after the erase operation is performed. If not, a small amount of memory blocks storing static data are exchanged after the erase operation is performed or not erased. Averaging action 0 3. The control method as described in claim 2, wherein the static data is reduced or even never updated, including system code, application code or user data that has not been updated for a long time. Wait. 4. The control method according to claim 2, wherein the method of exchanging the block storing the static data Φ is to move the static data to the memory block with the highest erasure level and erase the static data stored. Block. 5. A method of determining static data in a flash memory storage device, the control method comprising the steps of: recording a total number of erases of a memory block in the memory device; and recording when the memory device is erased Erase the erasure time of the block. 6. The control method according to claim 5, wherein the control method further comprises comparing the difference between the total erase count and the erase time mark, wherein the difference is the block in which the static data is stored. The method of claim 5, wherein the erasing time token is generated by a counter that is responsible for accumulating the number of times the memory device erases the memory block. In the field related to the memory block where the erase action occurs. 9. A non-volatile memory storage device comprising a plurality of memory blocks. The control method according to claim 5, wherein the erasure time mark can be recorded in a remembering block in which an erasing action occurs. The remaining area, or recorded in the logical/physical address translation table', includes: a storage unit for storing the total number of erasures of the storage device; and a counter for generating an erasure time stamp. Wherein the counter is a counter responsible for accumulating the number of erases of the memory blocks. 10. The non-volatile memory device of claim 9, wherein the erasing time C is the ship's block. The meaning of the (4) plus the number of scales. 12. The non-volatile memory device of claim 5, wherein the middle mark can be recorded in the occurrence of the riding action track, or recorded on the logical/physical address conversion table. __ in the position. a plurality of memory blocks; a memory unit, using a gray control unit, and a non-volatile memory memory device, the memory device comprising: a memory number for storing all memory blocks; The result determines the degree to which static erase is performed. Factory/丨 § 匕 匕 匕 匕 匕 , , , , 匕 匕 匕 匕 匕 匕 匕 匕 匕 匕 匕 匕 The degree of the standard deviation is the value of the threshold, and the evaluation memory storage device 'where the control unit decides to perform the static erasing average threshold value', if the judgment is less than the threshold value, After performing the 201015581 line erasing action, the first-to-storage static __ block is exchanged, and after the action, the second batch of memory blocks storing static data is exchanged. a non-volatile simon memory storage device, the storage device comprising: a plurality of memory blocks; a storage unit for storing a time stamp of a most recent erasure of each memory block; and - a control unit And for extracting the most recent smeared mark ' of each memory block from the storage unit and marking the earliest memory block at the time of erasing the slice before the action of performing the residual averaging on the memory block. & take near-time Ο 咖 15 15 赖 赖 非 _ _ _ _ _ _ _ _ _ _ _ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The total number of erasures for all blocks. Mark as this block