TW201015234A - Method for optical proximity correction, design and manufacturing of a reticle using character projection lithography - Google Patents

Abstract

A method and system for manufacturing a surface having a multiplicity of slightly different patterns is disclosed. The method comprises using a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. Application of such a method to fracturing, mask data preparation, or proximity effect correct is also disclosed. A method for optical proximity correction of a design of a pattern on a surface is also disclosed, comprising inputting desired patterns for the substrate and inputting a set of characters, some of which are complex characters, that may be used to form the pattern on the surface. A method of creating glyphs is also disclosed.

Description

201015234 VI. Description of the invention: [Technical field of invention] Inter-referenced application The present application claims the priority of the following application: 1) US Patent Application Serial No. 12/ filed September 1, 2008 No. 202,364, entitled "Method and System for Manufacturing a Reticle Using Character Projection Particle Beam Lithography"; 2) US Patent Application Serial No. 12/202,365, filed on September 1, 2008, entitled "Method For Optical Proximity Correction Of A Reticle To Be Manufactured Using Character Projection Lithography"; 3) US Patent Application Serial No. 12/202,366, filed September 1, 2008, entitled "Method And System For Design Of A Reticle To Be Manufactured Using Character Projection Lithography": 4) U.S. Patent Application Serial No. 12/269,777, filed on November 12, 2008, entitled "Method And System For Manufacturing A Reticle Using Character Projection Lithography"; All of these are incorporated by reference for all purposes BACKGROUND OF THE INVENTION The present disclosure relates to lithography, and more particularly to the design and fabrication of a surface using a symbol or cell projection lithography, which may be a reticle, a wafer or any other surface. Or in the fabrication of semiconductor devices (such as integrated circuits), optical lithography 201015234 can be used to fabricate material semiconductor splicing. Optical 彡 是 is the use of - lithography mask or reticle to transfer the pattern to the _ substrate (such as a semiconductor or a second wafer) to produce a printed circuit of the integrated circuit. Other substrates may include a planar display or a reticle. Ultra-ultraviolet (EUV) or X-ray lithography is also considered optical. The type of lithography. The reticle or reticle may comprise an electrical gate corresponding to an individual layer of the frequency circuit and the pattern may be imaged onto a certain area of the substrate, the area already Coated with a layer of sensitizing sensitive material (called photoresist or repulsion). Once the patterned layer is transferred, the squid can undergo various other processes, such as residual etching, ion implantation (doping), metallization. , reduction and polishing. These tabs are used to complete the individual layers on the substrate. If multiple layers are required, the entire process or its variants will be repeated for each new layer. Finally, a combination of a plurality of devices or integrated circuits will be presented on the substrate. These integrated circuits are then separated from each other by cutting or miscutting and can then be sewed into a package. In a more general case, the patterns on the substrate can be used to define a personal product (4) (10), such as a display pixel or a magnetic recording head. In the production or manufacture of semiconductor devices (such as integrated circuits), the direct mask can also be written in (4) semi-conducting materials. Scaleless direct writing is a printing process that transfers a pattern to a substrate (such as a semiconductor or a shredded wafer) to produce the integrated circuit. Other substrates may include flat panel displays, matte masks for nanoimprinting, or reticle. The ideal pattern of the layer is written directly onto the surface, in which case it is also the substrate. Once the (four) layer is transferred, the layer can undergo various other processes such as _, ion implantation (extrusion), metallization, oxidation, and polishing. These processes are used to complete a separate layer on the base 201015234. If multiple layers are required, the entire process or its variants will be repeated for each new layer. The layers in the layers can be written by optical lithography while others can be written directly by the person without masking to make the same substrate. In the end, more "set or frequency f - the combination will appear on the substrate. These integrated circuits are then separated from each other and installed as individual packets. In the case of the first case, the figures on the substrate are used to define a human body article 1 such as a display image recording head.

As noted, the lithography mask or reticle includes a pattern corresponding to the circuit components to be integrated onto a substrate. (d) The pattern for the manufacture of the reticle can be produced using (10) (computer-aided design) software or programming. In designing such patterns, the CAD program can follow the set design rules to produce the reticle. These rules can be set by processing, design, and end use restrictions. An example of an end use restriction is to define the geometry of a transistor in such a way that the transistor does not operate adequately at the required supply voltage. In particular, design rules can define the spatial tolerance between circuit devices or interconnects. For example, such design rules are used to ensure that the circuit devices or lines do not interact in an undesired manner. For example, the design rules are used such that the lines do not approach each other too close in a way to cause a short circuit. These design rule limits reflect what is included in the minimum size that can be reliably manufactured. When referring to these small sizes, the concept of a critical dimension is usually introduced. For example, it is defined as the minimum width of a line or the minimum distance between two lines. Those sizes require fine control. One of the objects in the fabrication of integrated circuits by optical lithography is to reproduce the original circuit design on the substrate using the reticle. Integrated circuit processing plants have been trying to use semiconductor wafer substrate real estate as efficiently as possible. Engineers continue to shrink the size of these circuits to allow the integrated circuits to contain more circuit components and use less power. As the size of an integrated circuit material decreases and its circuit density increases, the critical dimension of its corresponding mask pattern approaches the resolution limit of the fresh (four) shot (four) optical exposure tool. Since the critical dimension of the electrical complementation becomes small and approaches the resolution value of the exposure fixture, accurate transcription between the mask pattern and the actual circuit pattern developed in the barrier layer becomes difficult. In order to promote the optical lithography (4) to transfer a pattern having a feature smaller than the wavelength of light used in the optical process, a process QPC called optical proximity correction was developed to change the original on the mask. The layout compensates for distortion caused by interactions such as light diffraction and adjacent features. The OPC includes all resolution enhancement OPCs performed by a reticle to add sub-resolution lithography features to the mask pattern to reduce the difference between the original mask pattern and the circuit pattern ultimately transferred to the substrate. The sub-micro-particles interact with the silk file and interact with each other' and compensate for the proximity effect to improve the final transferred circuit pattern to improve the transfer of the case - a feature is that the sub-resolution assist feature (SRAF) is The additional feature added to improve the pattern transfer is called the "proline ((4)". The serif is a small feature that can be set in the - pattern - corner (C〇) to sharpen the final transferred image. The corner. Since the optical imaging has extended to the sub-wavelength region, the (10) feature must be 201015234. However, due to

Increasingly complex to compensate for more subtle interactions and affecting imaging systems are being pushed closer to their limits, with sufficient minimum line and spacing gauges. Optical proximity effects are large (four), so the correct OPC® for a given position The case is very much dependent on what other geometries are adjacent to it. Thus, for example, the line ends will have different sizes of profiles depending on what is on the reticle adjacent to the 匕. Even the purpose should be to produce exactly the same shape on the wafer. But these small but critical changes are important and prevent other shapes from forming a reticle pattern. It is common to 'discuss that these OPC-decorated patterns are written into a reticle based on the main features and OPC features. The main feature is the feature of the design that is reflected before the OPC decoration. The OPC features may include serifs, cuts ( Jog) and SRAF. To quantify what is small, a typical small change between adjacent ones in an OPC decoration can be 5% to 80% of a major feature size. It should be noted that variations in the design of the 0PC are being mentioned for clarity. Manufacturing variations, such as line edge roughness and corner rounding, will also occur in the actual surface pattern. When these 0PC variations produce substantially the same pattern on the wafer, it means that the geometry on the wafer is the same within a specified error. The specified error is designed for the function to be performed according to the geometry. 7 201015234 Depending on the details, example a transistor or a wire. However, typical specifications are in the range of 2% to 50% of a major feature range. There are also many manufacturing factors that also contribute to change, but the OPC component of the total error is usually in the range just listed. There are a number of techniques for forming a pattern on a reticle that includes the use of an optical or particle beam system. The most common system is of the variable shape beam (VSB) type in which a precise electron beam is shaped and directed onto one of the reticle coated with a resist. These shapes are simple shapes and are usually limited to a rectangle having a certain minimum and maximum size and a triangle having a minimum and maximum size of three internal angles of 45 degrees, 45 degrees, and 90 degrees. At a predetermined position, a dose of electrons is emitted into the resist having these simple shapes. The total write time for this type of system increases with the number of shots. A second type of system is a symbol projection system. In this case there is a template in the system having various shapes, which may be straight lines, any angular lines, circles, rings, partial circles, partial rings or any curved shape, and which may be a complex set of connections. A group of complex shapes of shapes or inconsistent sets of connections). An electron beam can be injected through the template to efficiently produce a more complex pattern (i.e., symbol) on the reticle. In theory, such a system can be faster than a VSB system because it can emit more complex shapes by emitting it each time. Therefore, it takes four shots to transmit an E with a VSB system, but only one shot can be completed with a symbol projection system. It should be noted that a shaped beam system can be thought of as a specific (simple) case of symbol projection, where the symbols are simply symbols, typically rectangular or a 45-45-90 triangle. Partial exposure of a symbol is also possible. For example, this can be done by blocking a portion of the particle beam. For example, in the case where a different portion of the beam is cut by an aperture in 201015234, the E described above may be partially exposed as an F or an I. For a very complex reticle, the pattern must be broken into nearly one billion and sometimes close to one trillion basic shapes. For example, there is a simple rectangular shape for a VSB system or a finite number of symbols in a symbol projection system. The more total instances of the basic shape (symbol) in the pattern, the longer and the more expensive the write time. However, for writing surfaces, such as OPC-decorated reticle, where there are still many subtle variations between smaller patterns, such projection systems are impractical today. The number of available symbols that can be the least time spent by the projector in selecting symbols is limited, and now only about 10-1000 symbols are allowed. When an OPC pattern that is subjected to excessively slight changes needs to be located on a reticle, a system or method capable of accomplishing this task is not yet available. Therefore, it would be beneficial to reduce the time and expense it would take to prepare and manufacture a reticle for a substrate. More generally, it would be beneficial to reduce the time and expense spent on preparing and manufacturing any surface. It may also be desirable to have a template mask that includes some of the complex symbols needed to produce or produce a surface having various patterns that need to be transferred to a surface. For example, it is possible that a surface can have thousands of patterns that are only slightly different from each other. In order to prepare a surface, it is desirable to have a template mask that produces a number of such slightly different patterns. As discussed more fully herein, this can be accomplished by using a template mask that includes a set of symbols that can be combined, modified, or adjusted to produce a pattern with many slight variations. Accordingly, a need exists for a method and system for fabricating a surface that eliminates the above-described problems associated with preparing a surface. 9 201015234 SUMMARY OF THE INVENTION In one form of the disclosure, a method for fabricating a surface having a plurality of slightly different patterns is disclosed, the method comprising the steps of: writing a set of symbols A surface is formed on the surface and the number of shots or total write time is reduced by utilizing a symbol change technique. In another form of the disclosure, a method for producing a surface is disclosed, the method comprising the steps of: designing a plurality of patterns to be formed on a surface, the patterns being slightly different; from the plurality of patterns Decide on a set of symbols to use; prepare a template mask with one of the set of symbols and reduce the number of shots or total write time by using a symbol change technique. In another form of the disclosure, a system for fabricating a surface having a plurality of slightly different patterns is disclosed, the system including a set of symbols for forming the pattern on the surface A template mask and means for reducing the number of shots or total write time using a symbol change technique. In one form of the present disclosure, a method of optical proximity correction for a pattern design on a surface is disclosed, the method comprising the steps of: inputting an ideal pattern for the substrate; and inputting the form for forming on the surface A symbol of a group of symbols, some symbols in the group of symbols are complex symbols. In another form of the disclosure, a method of optical proximity correction for a pattern design on a surface is disclosed, the method comprising the steps of: inputting possible characters based on predetermined symbols and the characters It is determined by one of the partial exposures for changing a symbol dose or changing a symbol position or applying a symbol. 201015234 In yet another form of the disclosure, a system for optical proximity correction for a pattern design on a surface is disclosed, wherein the system includes a desired pattern for the substrate and for forming the pattern on the surface Some of the patterns in the group are symbols, and some of the symbols are complex symbols. In another form of the disclosure, a method for rupturing or masking data preparation or proximity effect correction is disclosed, comprising the steps of: inputting a pattern to be formed on a surface, a subset of the patterns being mutually The difference is slightly different; and the selection is to be used to form one of the plurality of patterns, some of the symbols are complex symbols; and a symbol change technique is used to reduce the number of transmissions or the total write time. In another form of the disclosure, a system for rupturing or masking data preparation or proximity effect correction is disclosed, comprising means for inputting a pattern to be formed on a surface, the patterns being slightly different, And a set of symbols for selecting a plurality of patterns to be formed into complex symbols, the set of symbols being properly positioned on a template mask, and utilizing a symbol change technique to reduce the number of shots and One of the total write time devices. These and other advantages of the present disclosure will become apparent upon reference to the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cell projection system for fabricating a surface; Figure 2A illustrates a design of a pattern to be placed on a substrate; Figure 2B illustrates the design shown in Figure 2A. a pattern formed on a reticle; FIG. 2C illustrates a pattern formed by the reticle of FIG. 2B in a substrate 11 201015234 photoresist, indicating that the image is hardly corrected without optical proximity Similar to the design shown in Figure 2A; Figure 3A illustrates the version of one of the patterns shown in Figure 2A that has been optically adjacent corrected; Figure 3B illustrates the pattern shown in Figure 3A at the line a version of the optical proximity correction after the on-chip formation; FIG. 3C illustrates the formation of a pattern in the photoresist of a wafer using the reticle of FIG. 3B; FIG. 4A illustrates the presence of a pattern An ideal pattern on the substrate; Figure 4B illustrates two basic template shapes; Figure 4C illustrates the two basic template shapes shown in Figure 4B in an overlapping manner; Figure 4D illustrates the use of the display in Figure 4C The overlapping template shapes in one Forming a pattern on the line; Figure 4E illustrates forming a pattern on a substrate using the pattern shown in Figure 4D; Figure 5A illustrates two basic template shapes in an overlapping manner, wherein the templates One of the shapes consists of two discontinuous squares; Figure 5B illustrates the formation of a pattern on a reticle using the overlapping template shapes shown in Figure 5A; Figure 5C illustrates the use of Figure 5B The pattern shown forms a pattern on a substrate; Figure 6A illustrates a template shape for forming a pattern on a reticle; 201015234 Figure 6B illustrates the use of the template shown in Figure 6A The shape forms a pattern on a reticle; Figure 6C illustrates the formation of a pattern on a substrate using the pattern shown in Figure 6B; Figure 7A illustrates the formation of a pattern on a surface Four template shapes; Figure 7B illustrates the formation of a pattern on a surface using the template shapes shown in Figure 7A; Figure 8A illustrates the formation of a group of symbols on a template mask ; Figure 8B It is understood that the set of symbols shown in FIG. 8A forms a pattern on one surface; FIG. 8C illustrates a set of adjustment symbols; and the 8D diagram illustrates the varying dose levels by the solid line and the dotted line shape, each A symbol and an adjustment symbol are exposed to the residual agent on a surface by using the set of symbols shown in FIG. 8A and the adjustment symbols shown in FIG. 8C at varying dose levels; 8E The figure illustrates the use of the set of symbols shown in Figure 8A and the adjustment symbols shown in Figure 8C to form a pattern on a surface; Figure 9 illustrates how a surface is prepared for use in manufacturing such a A conceptual flow diagram of a substrate of an integrated circuit on a wafer; Figure 10 illustrates another concept of how to prepare a surface for fabricating a substrate such as an integrated circuit on a germanium wafer. Figure 11 illustrates a set of symbols; Figure 12 illustrates a set of symbols and adjustment characters with shape changes; 13 201015234 Figure 13 illustrates a set of symbols and adjusters with positional changes Figure 14 illustrates the shape change of the adjustment symbol Generating a set of patterns; Figure 15 illustrates the generation of a set of patterns by various dose amounts of the adjustment symbols; Figure 16 illustrates a set of patterns produced by various dose amounts of a single symbol, Figure 17 illustrates a set of patterns resulting from changes in the position of the adjustment symbols; Figure 18 illustrates a concept of how to prepare a surface for fabricating a substrate such as an integrated circuit on a silicon wafer. Sexual flow chart; Figure 19 illustrates an example of a character; and Figure 20 illustrates an example of a parameterized character. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Referring now to the drawings, wherein like numerals refer to the same items, in accordance with the disclosure, FIG. 1 shows an embodiment of a lithography system, such as a particle beam write. The system, in this example an electron beam writing system, uses symbol projection to create a surface 12. The electron beam writing system 1 has an electron beam source 14' which projects an electron beam 16 toward an aperture plate 18. The plate 18 has an aperture 20 formed therein that allows the electron beam 16 to pass therethrough. Once the electron beam 16 passes through the aperture 20, it is directed or directed by the lens system (not shown) as an electron beam 22 to another rectangular aperture plate or stencil mask 24. The template mask 24 has a plurality of apertures 26 formed therein that define various types of symbols 28. Each symbol 28 formed on the template mask 24 is used to form a pattern on the surface 12. An electron beam 30 is formed in the apertures 26 of the 201015234 and is directed onto the surface 12 as a pattern. The surface 12 is coated with a resist (not shown) which reacts with the electron beam 3〇. The s-Hai pattern 32 is drawn by using one of the electron beam systems. This reduces the total write time of the sigma pattern 3 2 compared to using a morphable beam (VSB) projection system or method. The surface 12 can be a wire seeker. The surface 12 can then be used in another device or machine (such as a scanner) to transfer the pattern 32 to produce an integrated circuit or wafer. More generally, the reticle is in another apparatus or machine to transfer the pattern 32 to a substrate. As indicated above, it is difficult to transfer an ideal pattern to a substrate because semiconductor and other nanotechnology manufacturers have reached the limits of light and lithography. For example, Figure 2 illustrates an ideal pattern 4 〇 (which represents a circuit) to be formed in the resist of the substrate. When a reticle is produced in an attempt to form the pattern 40 on the reticle, the reticle is not a perfect representation of the pattern. An attempt to represent one of the patterns 4 形成 formed on a reticle is shown in the second figure. Compared with the case, the pattern has the characteristics of rounding and shortening. When the pattern 42 is used in the optical lithography process, a pattern 44 (as depicted in Figure 2C) is formed in the photoresist on the substrate. The pattern 44 is not very close to the ideal pattern 40, indicating why optical proximity correction is required. To compensate for the difference between the patterns 40 and 44, an optical neighboring fork is used. The optical proximity correction changes the reticle to compensate for the distortion caused by the optical interaction between the adjacent optical apertures and the anti-money treatment. Figures 3 through 3C show how the optical proximity correction can be used to improve the optical micro-process to develop the pattern 44 - the preferred version. Specifically, FIG. 3A illustrates that the pattern is one of a variation of the pattern, and the pattern is applied to the respective corners of the pattern 5G to provide an additional area to reduce the sharpness of the corner of the material. When the reticle pattern is generated, it may appear in the reticle in the case 54 shown in Fig. 3B. When the optical proximity corrected pattern 54 is used in an optical lithography apparatus,

The fourth (four) and the other are broken. The pattern 56 is more like the ideal pattern 40 than the pattern 44. This is due to optical proximity correction. Although the use of optical proximity has a value of ▲ which may require each pattern to be modified or decorated, 迨 increases the time and expense of producing a reticle or mask. Moreover, the various patterns formed on the reticle when using OPC may be suitably slightly identical and this increases the time and expense in preparing the __ reticle. Moreover, a large number of variations or variations in the patterns may make it difficult to control the production-reticle using the symbol projection system because the number of symbols required will be too large.

Referring now to Figure 4A, there is shown an ideal pattern 6 (such as a contact point) to be placed on a substrate. The ideal pattern 6〇 is a square shape. The following steps are used in an attempt to provide a reticle for transferring the pattern 60 as close as possible to the substrate. Figure 43 shows two basic template shapes or symbols 62 and 64 which are used to write the ideal pattern 6 onto a reticle. The template shape 62 is a square shape 66 having a serif 68 at each of the corners 70, 72, 74 and 76. The template shape 64 is an adjustment symbol that can be repositioned to the shape 62 to change or vary the serif 68 at one or more corners of the corners 7〇, 72, 74, and 76 of the 16 201015234 shape. For example, in the 4th C-frame, the frequency (4) 彡_ is displayed, which overlaps with the (4) of the template shape 62. When the mode 哗Μ is used in a cell projection device (such as in the electron beam writing system (9) shown in Fig. i to write the pattern onto the - reticle, as shown in the A pattern 78 will appear. The pattern 78 has a -turn 8G which is longer or more pronounced than any of the other corners. This is due to the use of the template shape (10) to change the corner 7 [in-light resistance or - mark The pattern on the line is used in a conventional lithography apparatus to transfer the pattern 78 onto the substrate. For example, if a given shape affecting the optical proximity correction is given, it is as close as possible to the substrate. In the case where the pattern 60 is produced, if the second pattern 78 on the reticle is of a suitable shape, the pattern 82 depicted in the first side will be the result of the pattern 78 being transferred to the substrate. Or similar to the ideal pattern 60. Various other patterns may be formed by utilizing the template shapes 62 and 64. For example, two instances of the shape 64 may be combined to form a symbol 90 for use with such The corners 70 and 74 overlap to form a pattern %, which is in Figure 5A The template shapes 9〇 and 92 are overlapping shots on which the pattern 94 in Figure 5B can be produced. When given adjacent shapes that affect optical proximity correction, as close as possible to the substrate In the case of the pattern 6 ,, the pattern 94 on the reticle is a suitable pattern, and when the pattern 94 is used to project the substrate, the (4)-pattern % appears on the substrate in the 5th CW. The pattern 96 is substantially identical to the ideal pattern 6 。. It is also conceivable to change or vary the dose used in the electron beam writing system 17 201015234 1 以 to further modify or adjust on a reticle. These various patterns are formed. It will be appreciated that by using some template shapes, a large number or shapes can be formed on one of the surfaces such as a reticle. Referring now specifically to Figure 12, a set of 16 symbols 400, 402 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424, 426, 428, and 430 are shown as such symbols that appear on a surface after being projected by a symbol projection system. On the surface The "pattern" (shown by symbol 400) is designed to be a center CP, one of the symbols shown in Figure 13, to project a projection into a square (as shown in Figure 13). One of the "squares" 452) pattern. The "2 ears" pattern (shown by symbol 414) is designed to be one of the "ears at 23" 454 shown in Figure 13. Meta-projection, and the symbol is an example of an adjustment symbol. Similarly, 15 symbols 402, 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424, 426, 428 and 430 are projected in combination with symbol 400 to produce 15 patterns 472, 474, 476, 478, 480, 482, 484, 486, 488, 190, 492, 494, 496, 498, and 500 on a surface. (as drawn in Figure 14). A pattern 470 (Fig. 14) is produced by projecting the symbol 400 with a dose. The 15 patterns 472, 474, 476, 478, 480, 482, 484, 486, 488 '490, 492, 494, 496 '498 and 500 in Fig. 14 are formed by combining one of two symbol emission A character that is an example of a large change in a slightly different pattern that can be produced on a surface from a small set of symbols. One of the potential reasons for the need for large variations is the use of optical lithography for optical proximity correction for final projection, in which case the surface is a reticle or a reticle. In order to project the square 452 on the substrate (shown as 18 201015234 in Fig. 13), a slightly different pattern (i.e., the "0 ears" (Fig. 12) is used because optical proximity correction is required. Large variations of the variants need to be produced on the reticle. However, this disclosure is not related to the need for a large change in the pattern that is slightly different. By varying the dose of the adjustment symbols, only the various patterns that can be emitted onto the surface by these symbols are further increased. Figure 15 represents dose examples 530, 532, 534, 536, and 538 that vary by 0%, -30%, -60%, +50%, and +100% to produce a critical dimension change from 1 〇 to i9 nm. . Furthermore, the dose of the central symbol represented by '0 ears, 400 (Fig. 12) can also be changed to produce further variations of slightly different patterns. Figure 16 shows different shapes 550, 552, 554, 556, and 558 can be produced by varying the dose by -40%, -20%, 0%, +25%, and +50%. A shape 560 illustrates the shapes 550, 552, 554 The overlap of 556 and 558 to further illustrate that a slightly different pattern can be produced by changing the dosage. Each of the patterns 550, 552, 554, 556, and 558 can be a character or pattern 'known to the character or The pattern can be derived by combining a small number of symbols. A parametric character can be used as one of the more generalized more compact representations to describe multiple characters in a single description. A pattern 560 illustrates that a dose amount can be Represents one of a plurality of characters having a representation. A parametric character describing one of all of these possible characters 550, 552, 554, 556, and 558 is a more compact and flexible representation. Different patterns can also be adjusted by The same basic pattern of symbols is emitted to different positions. Referring to Figure 17, a pattern 580 and a pattern 582 are represented by the same 1 ear symbol (such as 19 201015234 shown in Figure 12) Symbol 404) is configured with different locations to the one of the ear symbols (such as the symbol 400 in Figure 12). By preparing a plurality of variations of the symbols, in this case It is the change of the central symbol and the change of the adjustment symbol and the change of the dose and the relative position, so that a plurality of slightly different patterns can be projected onto the surface and only two shots are used. Using three or more shots, The number of available character patterns projected onto the surface is increased by geometric progression. Other patterns, such as patterns 584, 586, 588, and 590, are also shown in the πth image. For example, 'the pattern 584 is utilized by an adjuster Element 412 (shown in Fig. 12) is formed by combining symbol 400 (in Fig. 12) with the standard distance of the two ears. The pattern 586 is utilized by utilizing the adjuster in Fig. 12. Element 432 takes the symbol 400 and one of the two ears a long distance The symbols are formed in combination. The pattern 588 is formed by combining the symbol 4 第 in Fig. 12 with the symbol of one of the three ears by the adjustment symbol 424 in Fig. 12. The pattern 590 is formed by combining the symbol 4 第 in Fig. 12 with a symbol of a long distance of one of the three ears using an adjustment symbol 434 in Fig. 12. Referring now to Fig. 6A' Another template pattern is shown that can be used to attempt to form a pattern on a substrate, such as a wafer, similar to the ideal pattern 60 shown in Figure 4a. The template pattern 100 includes a Template shape 102 'The template shape 102 has a serif 104 at each of its corners 106, 108, 110 and 102. The stencil pattern 100 also has a sub-resolution assist feature (SRAF) 114 located at each of the diagonals 106, 108, 11 〇 and 112. The stencil pattern 100 is used to form a pattern 116' on a reticle as shown in Fig. 6B. Referring now to Figure 6C, the pattern 116 is connected to 201015234 to form a pattern 118 on a substrate. The pattern 118 is similar to the ideal pattern 60. Figure 7A illustrates four template symbols 150, 152, 154, and 156 that can be used on a template mask to join together to form a complex shape or pattern 158 on a reticle as shown in Figure 7B. . In particular, the first symbol 150 is transmitted or projected onto the reticle, then the second symbol 152 is transmitted, followed by the third symbol 154 and the last fourth symbol 156. These symbols are curved shapes rather than straight shapes. In this way, a complex pattern such as one of the pattern 丨 58 can be formed on a reticle. Such shapes on the stencil mask may be referred to as "symbols" and the pattern formed on the reticle may be referred to as a "character". It is also possible, in addition to utilizing shape changes, to utilize dose control to produce more slight variations in the pattern formed on a reticle using the same symbols such as the symbols 15 〇, 152, 154, and 156. The combination of one of the plurality of symbols can be overlapped with each other by a different dose change to increase the change in shape or pattern produced by "T. In addition, the position of a symbol can be varied to increase the variation in possible shapes or patterns that can be produced. Since the shapes of the symbols 150, 152, 154, and 156 are curvilinear, this reduces the need to use a particle beam writing system to transmit or project the symbols 15 〇, 152, 154, and 156. The number of shots of a character pattern such as one of the patterns 158 is written on the reticle. For example, the pattern 158 can be transmitted using only the four symbols 150, 152, 154, and 156. And if you use a straight shape, you must use more emissions or VSB emissions. It can be seen that the ability to use symbols instead of VSB transmission reduces the time to prepare a reticle. It is also possible to use a straight line shape and a curved shape together to form a Figure 21 201015234 on a reticle. This feature of the full-feature projection is available in the symbol projection system, but for projections that require a large number of various shapes, the number of symbols that can be used as a single element is not large enough. The method and system combine a plurality of symbols by a possible overlap of the transmitted dose and the positional partial projection change to = the number of available character patterns. By having a large number of characters as a simple pattern rather than a limited number of characters as a usable pattern, a more complex pattern can be projected onto the surface without significantly affecting the number of shots or the writing time. Alternatively, the use of a large number of such available characters allows a highly complex surface to be emitted with a much smaller number of shots and writer time. _ Referring now to Figure 8A, a set of symbol measurements that can be placed on a template mask is shown. The symbol 2GG can be used to form a pattern 202' on the - reticle as shown in Fig. 8. The pattern view can be formed from one or more symbols in the group of symbols '200. However, in order to better form an ideal, the pattern is transferred to a Shihua wafer using the - reticle, and the pattern can be further improved by using the adjustment symbol or the emission 2 〇 4 visible in the figure. . Fig. 8D depicts an example of the combination of the pattern 2〇2 and the adjustment symbols 2〇4, which may be formed in the anti-residue of the -mark line >; These adjustment symbols 2() 4 ® are shown in dashed lines to indicate a smaller dose for one of these symbols 2〇4 compared to the dose used to transmit other symbols 202. The first map shows a pattern 206' which is formed on the ' reticle using the set of symbols 200 and the adjustment symbols 204 in varying doses. A finite number of symbols such as the set of symbol details can be used to form a plurality of patterns of different shapes or a plurality of patterns of slightly different shapes. Figure 9 is a conceptual flow diagram 250 of how to prepare a reticle for fabricating a surface of an integrated circuit such as a germanium wafer. In the first step 22 201015234, a physical design (such as a physical design of an integrated circuit) is designed. This physical design can include determining the logic gate, the transistor 'metal layer, and other items that need to be present in a physical design, such as a physical design in an integrated circuit. Next, in a step 254, optical proximity correction is determined. In one embodiment of the present disclosure, it may include inputting a library of pre-computed characters or a library of parameterized characters. This step can also be optionally or additionally

A pre-designed symbol library is included as input, and the pre-designed symbol library includes complex symbols available in a template 260 in a step 262. In an embodiment of the present disclosure, an OPC step 254 may further include simultaneously optimizing the number of transmissions or the writing time, and may further include a breaking operation, a transmitting positioning operation, a dose dispensing operation, or may further include a Launch sequence optimization operations or other mask data preparation operations. Once the optical proximity correction is complete, in step 256, the mask design is entered. Next, in step 258, a preparation operation may be performed including - breaking operation H bit operation, - dose dispensing operation, or - emission order optimization. Any one of the GPC step 254 or the step of the MDP step 258 or the independent of the two steps (4) 4 or 258 may include a program for the finite number of template symbols that the mosquito needs to appear on a template. Or by changing the dose, position, and the degree of exposure of the knife, the combination of the special elements of the m-(4)--template can be: less = shot and a large number of characters or parameterized words transmitted to the surface t reveal it All or most of the case is written on the reticle. Through the disclosure should be § (4), the material: (4) Preparation does not include QPC.幻^ w shouting slamming a second two ==:=: 23 201015234 Step 258, which may include a framing operation, may also include a pattern matching operation to match the characters to produce a close match to the mask design. cover. The mask data preparation may further comprise inputting a pattern to be formed on the surface of the image, wherein the patterns are slightly different 'selecting one of the plurality of symbols to be used to form the plurality of patterns, the group of symbols being appropriately aged - template On the mask, and the first group symbol is based on changing the symbol dose or changing the symbol position or applying a partial exposure of a symbol within the group of symbols to reduce the number of transmissions or the total write time. A set of slightly different patterns on the surface can be designed to produce substantially the same pattern on the substrate. Moreover, the set of symbols can be selected from a predetermined set of symbols. In one embodiment of the present disclosure, a set of symbols (in step 270) available on a template that can be quickly selected during the mask writing step 262 can be prepared for a particular mask design. In this embodiment, once the mask data preparation step 258 is completed, a template is prepared in a step 260. In another embodiment of the present disclosure, a template is prepared in step 260 prior to or in synchronization with the MDP step 258, and may be unrelated to the particular mask design. In this embodiment, in step 272, the symbols and template layouts available in step 270 are designed to be output, commonly used in many possible mask designs 256 to include slightly different patterns, These slightly different patterns may be derived from the following output: a particular OPC program 254 or a particular MDP program 258 or a particular type of design that characterizes the physical design 252, such as memory, flash memory, system-on-chip design Or a particular processing technique designed in the physical design 252, or a particular cell library used in the physical design 252, or any other general feature that can form different sets of slightly different patterns in the mask design 256. The template may include a set of symbols, such as the finite 24 201015234 character 7L determined in step 258, which includes a set of adjustment symbols. Once the template is complete, the template is used to create a surface in a masking machine such as an electron beam writing system. This particular step is represented by step 262. The electron beam writing system projects a beam of electrons onto a surface via the template to form a pattern on a surface, as shown in step 264. The finished surface can then be used in an optical lithography machine, which is shown in step 266. Finally, in a step 268, a substrate such as a lithium wafer is produced. As described above, in a step 270, symbols can be provided to the OPC step 254 or the MDP step 258. This step 270 also provides a symbol 274 for a symbol and template design step 272 or a character. The symbol and template design step 272 provides input to the template step 260 and the symbol step 270. The character generation step 274 provides information to the - character or parameterized character step 276. Moreover, as already discussed, the character or parameterized character step 276 provides information to the OPC step 254 or the MDP step 258.

Referring now to Figure 10, there is shown how to prepare a surface for the fabrication of another conceptual flow of a substrate such as an integrated circuit on a germanium wafer.

One of the integrated circuit designs is designed. This physical design can be an ideal pattern that the designer wants to transfer to a substrate. Next, in a step 3〇4, the optical proximity correction of the ideal pattern generated in step 302 is determined. This step can include selecting the characters you need to prepare. The optical proximity correction may also include inputting a character of $ can be based on a predetermined symbol, and the characters are changed by a symbolic dose or by changing a symbol position or using a partial exposure of a symbol, > The calculation is decided. Moreover, the optical proximity correction can include selecting a character from the characters of the & 25 201015234, calculating the characters on the base based on the selected character, and selecting if the error from the calculation exceeds a predetermined threshold Another character. The predetermined symbols can be from a list of geometric patterns. Once the optical proximity correction is complete in a step 304, a mask design is performed. Next in a step 306, a mask design is prepared. Once the mask design is prepared, in a mask data preparation step 308, the mask design is further enhanced. The mask data preparation step 308 can include a program for determining a limited number of template symbols that need to be present in a template to enable writing of all desired patterns on a reticle. The mask data preparation may also include pattern matching to match the characters to produce a mask that closely matches the mask design. The iteration of pattern matching, dose distribution, and equivalence checking can also be performed, possibly, in a correct construction (c〇rrect-by-construction) "decisive, calculation is performed", including only one iteration. These steps Will assist in preparing an enhanced equivalent, mask design. Once the mask is reinforced, an equivalent mask design is produced in a step 31. It can be used to determine if the equivalent mask design is indeed equivalent to the There are two motivations for the mask design test. One motivation is to pass the mask test. Another motivation is to confirm that once the wafer or integrated circuit has been fabricated, it will function normally. A pattern matching operation indicates the proximity of a match. Can be determined by a set of equivalence criteria. An equivalent criterion can be at least partially determined by lithography equivalence. The lithography equivalent can be determined by a set of predetermined geometric rules, a set indicating a match, a part of the match Or a mismatched mathematical equation or by running a lithography simulation of the pattern on the surface design and simulating one of the characters and using a predetermined set of geometric rules or by a The stage indicates that a matching, partially matched, or mismatched mathematical equation compares two results 26 201015234 to determine. When it is ensured that an equivalent mask design 31 is produced, the MDP step 308 can utilize a predetermined set. The symbols, characters, or parameterizations may be used to optimize the number of transmissions or write times. In another embodiment, OPC and MDP may be combined in a correct construction method, in which case there may be no such The mask design 310 is separately produced by the mask design 3〇 6. The equivalent mask design can be used to prepare a template, as shown in step 312. Once the template is completed, the template is used to prepare for an electronic One of the beam writing systems masks a reticle written into the machine. This step is represented by a step 314. The electron beam writing system projects a beam of electrons onto the surface via the template to a surface The pattern is formed. The surface is completed in a step 316. The finished surface is then used in an optical lithography machine (which is shown in a step 318) to transfer the patterns appearing on the surface to, for example, stone Forming an integrated circuit on one of the substrates of the wafer. Finally, in a step 32, a substrate such as a semiconductor wafer is produced. As described above, in step 322, the symbol can be supplied to the substrate. OPC step 304 or the MDP step 308. This step 322 also provides a symbol to a character generation step 326. The symbol and template design step 324 provides input to the template step 3丨2 or a symbol step 322. The symbol step 322 can provide input to the symbol and template design step 324. The character generation step 326 provides information to a character or parameterized character step 328. Also, as discussed above, the character or parameterized character step 328 provides information to the OPC step 308 or the MDP step 308. Referring now to Figure 18, another conceptual flow diagram 700 showing how to prepare a surface is shown, the δ metasurface being written directly onto one of the substrates, such as the Shishi wafer. In a first step 702, a physical design (such as an integrated circuit - 27 201015234 physical design) is designed. It can be an ideal pattern that the designer would like to transfer to a substrate. Next, in a step 704, proximity effect correction (PEC) and other data preparation (DP) steps are performed to prepare the input data to a matrix writing device, wherein the result of the entity design includes a plurality of slightly different patterns . The step 704 can also include inputting possible characters or parameterized characters from step 724 based on predetermined symbols from step 718 and the characters are changed by a symbol in the character generation step 722 to change a symbol dose or change one The position of the symbol or the calculation of one of the partial exposures of a symbol is used to determine. The step 704 can also include pattern matching to match the characters to produce a wafer image that closely matches the one of the physical designs generated in step 702. Iterative generation of pattern matching, dose dispensing, and equivalence checking can also be performed, possibly including only one iteration when a properly constructed "deterministic" calculation is performed. A template is prepared in a step 708 and then provided to a wafer writer in a step 710. Once the template is complete, the template is used to prepare a wafer in a wafer writing machine such as an electron beam writing system. This step is represented by step 710. The electron beam writing system projects a beam of electrons onto a surface via the template to form a pattern on a surface. The surface is formed in a step 712. Further, symbols in one step can be provided to the PEC and data preparation step 704. This step 718 also provides a symbol to a character generation step 722 4 and a template design step 72 to provide an input to the template step or provide an input to the symbol step 718. The symbol step 718 can provide input to the edge character 7L and template design step 720. The character generation step 722 provides information to the - character or parameterized character step 724. The character or parameterized character step 724 provides information to the PEC and the data preparation step 7〇4. This step 71 〇 28 201015234 includes repeating the application as needed for each layer of the process, possibly one of which is processed by the method described in connection with FIG. 9 and the ig diagram and the other layer is processed by the method of FIG. 18 above. Or other layers are processed using any other wafer writing method used to produce integrated circuitry on the Shihua wafer. Figure 11 shows various other basic template shapes or symbols 35〇, 352, 354, 356, 358, 360, and 362 that can be used as a set of symbols on a template to form various patterns on a reticle . When using symbol projection, these template symbols can be slightly modified by three methods. The first way is to modify the shape and size of the symbol. For example, variable symbol projection can be utilized when a single symbol can be changed by partial exposure to change a portion of the symbol. The second way is to slightly modify the dose amount when one of the symbols is given a given shape and size. One of the particle projection emissions "dose, is the shutter speed, which is the length of time for a given shot to be projected onto the surface of a reticle. "Dose correction" is a processing step 'which is used for any given The dose amount of the symbolic projection is slightly modified, for example for proximity effect correction (PEC). In this particular embodiment, in addition or in combination with other dose corrections, the dose is purposefully altered to be slightly modified to be projected onto The surface of a reticle is sized and shaped to form a pattern or character on the reticle. It is also possible to utilize multiple of the symbols 350, 352, 354 and 356 The overlapping emission modifies the patterns emitted onto a reticle to produce a wide variety of patterns or characters. The patterns or characters may be straight lines, near straight lines, lines or curved shapes. Further, it is also contemplated that The symbol modifies the dose to produce more patterns or characters. Also, a set of template symbols can be used with a VSB shot (which is an example of a simple symbol) on a surface of 29 201015234 More patterns or characters are formed. The VSB shots and symbols can be combined with the assigned dose amount to produce a wide variety of patterns or characters. The third method of slightly modifying the template symbols is by positional change. Equal symbols 358, 360, and 362 show three positional changes of the same symbol. In addition to changing the geometry of the symbols and the relative positions of the symbols relative to each other, by varying the dose amount, from - given The number of mask image segmentation blocks that can be quickly emitted in the collection of symbol projection symbols is multiplied. A large number of characters requiring a few symbols are available to project complex with reduced number of projections or write time. φ By using a set of symbols, a complex pattern comprising a straight line shape, a shape connecting edges of any angle, and a connected or unconnected group of shapes including arbitrary curvatures can be formed. Any curvature can include circles, semicircles And a quarter---circle. A set of symbol projection symbols are designed and included on the template mounted in a particle beam projection system that writes a reticle. An optical proximity The correction system can be used to select one of a combination of symbolic projection symbols that may include a possible varying dose amount and a partial degree of projection of the VSB emission to produce a plurality of patterns. A set of symbols can be pre-designed, specific for a particular design Or a more general design for a group of designs with some commonalities (such as a particular semiconductor fabrication technology node) and potential future designs. The optical proximity correction system can break overlapping symbols, each symbol has a variable A dose amount that allows for the creation of complex shapes on the reticle. It is also possible that the optical proximity correction system can begin with a large pre-computed or pre-computed character library. The optical proximity correction system can then be attempted to perform From the original physical design of the integrated circuit to the reticle setting 30 201015234 ❿

In the optical proximity correction of the transfer, the available characters are utilized as much as possible. The characters can be marked with - the number of times of the phase _ and the number of times the writer is 5 or more values. The proximity correction system, the masking system, or some independent programs can be selected less. The number of shots or writes to optimize the number of shots or write times. The optimization can be performed in a dry manner, in which each character is _ to be optimized for the number of stitches and the writer _ selects the best character, and the towel matches the -B case with a certain order selector or - The money optimizes the square wire to execute = = Simulate back *, the exchange of the towel character selection optimizes the total number of shots 戍 write time. It may be that the patterns that are to be formed on the - reticle may not yet be matched by any available characters. Such a pattern may need to be formed by the use of VSB emission. Referring now to Figure 19, there is shown an example of the characters 1000, 1002, 1004 and 1006 available by any other steps of optical proximity correction, rupture, proximity effect correction or masking of data. The characters 1()()(), 1〇〇2, 10〇4, and 1_ may or may not be generated by a combination of the same symbols or they may be generated from the four different symbols. character. Regardless of the method by which the characters are produced, the characters represent possible patterns, and the possible patterns are known as possible patterns that can be produced on the surface by a few times of transmission or writing time. Each character may have been associated with the specification of the symbol required to produce the character, the partial exposure command for each of the symbols, the required dose for each symbol, and the relative position of the symbols. . Figure 20 shows an example of parameterized characters 1010 and 1012. This character 1010 illustrates the general shape described by the specification of the variable size, in which the length X varies from 10 to 25 in unit length values. The character 1 〇 12 illustrates the same general shape in a more restrictive manner, wherein the length X can only be one of a specific value, for example, 10, 15, 2 or 25. The 5 parametric character 1010 illustrates that these descriptions take into account a large variety of possible characters that are not applicable to the pastoral method of undecided characters. An example of one of the parametric character descriptions for this character 1 (H 0 can be as follows: pglyph upsideDownLShape (x : nanometers where ((x - 10) or ((x >10) and (x<25)) or ( x = 25)))· rect (0, 0, 5, 15); ❹ rect (0, 15, x, 20); end pglyph; used to describe the parameterized character of one of the sub-elements 1012 As follows: pglyph upsideDownLShape2 (x : nanometers where ' ((x = 10) or (x = 15) or (x = 20) or (x = 25))); rect (0, 0, 5, 15); rect ( 0, 15, x, 20); end pglyph; These paradigm descriptions are based on parameters that provide a logic test that determines which parameter values match such as "its _((X = 10) or (x = 15) Or (X = 20) or (X = 25)) or "where ((X = 1〇) or ((χ>ι〇) and (χ<25)) or (χ = 25))" There are many other ways to describe a parametric character. Another example of a constructive approach is as follows: pglyph upsideDownLShape2 (x : nanometers); glyphFor(x =10, x + x+5 ; x>25) 32 201015234 Rect (0, Ο, 5, 15); rect (Ο, 15, χ, 20); end pglyph;. The book has been described in detail with respect to specific embodiments, but it should be noted that the county ^ &

Changes, changes, and equivalences of known examples. These and other improvements and variations of the present system and method for the use of symbol projection lithography - _ π deep film can be implemented by those skilled in the art without departing from the spirit and scope of the subject matter. ^ β, the spirit and scope of this standard is more specific than the attached patent application. Moreover, those skilled in the art will appreciate that ^ is an example and is not intended to be limiting. Therefore, the intent is that the scope of this k is modified and changed from the scope of the patent and its equivalents. Here

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a one-dimensional projection system for manufacturing a surface; FIG. 2A illustrates a design of a pattern to be located on a substrate; the additional drawing illustrates the one shown in FIG. 2A. Designing a pattern formed on a reticle; the second figure illustrates the use of the reticle in Figure 2B to shape the photoresist in a substrate, indicating that the uncorrected proximity correction _ is almost not similar to the second The design shown in the figure; Figure 3A illustrates the near-corrected version of the pattern of the optical neighbor 33 201015234 shown in Figure 2A; / the second embodiment shows that the pattern shown in Figure 3A is on the reticle a version of the optical proximity correction after formation; FIG. 3C illustrates the use of the reticle in the second diagram to form a pattern in the photoresist of the wafer; FIG. 4A illustrates the substrate to be located Cut-ideal pattern; 4th figure illustrates two basic template shapes; reference-weight m illustrates the two basic template shapes shown in the first side of the figure. Figure 4D illustrates the formation of the fourth shape on the ----- Pattern, 5 hai, etc. overlapping template shape Figure 4E illustrates Using the pattern formed on the fourth layer; the pattern shown in Fig. 5 is shown in Fig. 5A. The two basic template shapes in the manner of the template (4) in one 晷, one of the 'two' The coherent squares are merged into one. The fifth figure illustrates the overlapping template shapes of the pattern formed by using - and forming the pattern on the reticle - Figure 5C illustrates the case of using the first formation; The round case is illustrated in Figure 6 of the base - for forming a pattern on the __ g shape;

Fig. 6B illustrates the use of a pattern formed on the 6A-reticle; the template shape illustrates a pattern formed on the body of the base 34 201015234 as shown in Fig. 6C; The figure illustrates four template shapes for forming a pattern on a surface; FIG. 7B illustrates the formation of a pattern on a surface using the template shapes shown in FIG. 7A; FIG. 8A illustrates Forming a group of symbols on a template mask; Figure 8B illustrates forming a pattern on a surface using the group of symbols shown in Figure 8A; Figure 8C illustrates a set of adjustment symbols; Figure 8D illustrates the varying dose levels using solid and dashed shapes, each symbol and modifier being utilized with varying doses using the set of symbols shown in Figure 8A and the display shown in Figure 8C. The adjustment symbols are exposed to the anti-contact agent on a surface; Figure 8E illustrates the formation of one of the symbols on the surface using the set of symbols shown in Figure 8A and the adjustment symbols shown in Figure 8C. Pattern; Figure 9 illustrates how to prepare a surface for fabrication such as a wafer A conceptual flow diagram of a substrate of one of the integrated circuits; Figure 10 illustrates another conceptual flow diagram of how to prepare a surface for fabricating a substrate such as an integrated circuit on a germanium wafer; Figure 11 illustrates a set of symbols; Figure 12 illustrates a set of symbols and adjustment characters with shape changes; Figure 13 illustrates a set of symbols and adjustment symbols with positional changes; Figure 14 illustrates A set of patterns is generated by the change of the shape of the adjustment symbol; Figure 15 illustrates a set of 35 201015234 patterns generated by various dose amounts of the adjustment symbols; Figure 16 illustrates various types of a single symbol The dose amount is generated - a set of patterns; Figure 17 illustrates a set of patterns produced by the change in position of the adjustment symbol; Figure 18 illustrates how to prepare a surface for fabrication on a wafer such as - A conceptual flow diagram of a substrate of an integrated circuit; Figure 19 illustrates an example of a character; and Figure 20 illustrates an example of a parameterized character. [Major component symbol description] _ 10.. . Electron beam writing system 12.. Surface, reticle 14 .. . Electron beam source · 16, 22, 30. · · Electron beam... 18.. Aperture plates 20, 26... apertures 24. rectangular aperture plates, template masks 28, 400, 402, 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424, 426, 428 430... symbols 32, 42, 44, 50, 54, 78, 82, 94, 96, 116, 118, 202, 206, 580, 582, 584, 586, 588, 590... 60...ideal pattern 52.. serif element 56.. output pattern 62, 64... template shape, symbol 36 201015234 66... square shape 68, i〇4..·serif 70, 72, 74, 76, 8〇, 106, 108, 110, 112··. Corner 90··· Symbol, template shape 92... Template shape, pattern 100... Template pattern 102.··Template shape

114... sub-resolution auxiliary feature 150... template symbol, first symbol 152... template symbol, second symbol 154... template symbol, third symbol 156... template symbol, fourth symbol 158... complex shape, complex pattern 200... a set of symbols, other symbols 204... adjust symbols or emit 250, 300, 700... conceptual flow chart 252... steps, physical design 254... steps, specific OPC program 258...steps, specific MDP programs 256, 260, 262, 264, 266, 268, 270, 272, 274, 276, 302, 304, 306, 308, 310, 312, 316, 318, 320, 322, 324, 326 , 328, 702, 704, 706, 708, 710, 712, 714, 716, 718, 720, 722, 724, ... step 362.. basic template shape or symbol 350, 352, 354, 356, 358, 360, 37 201015234

432, 434... adjustment symbol 450... center CP 452.. square 454... ears at 470, 472, 474, 476, 478, 480, 482, 484, 486, 488, 490 492, 494, 496 498, 500...patterns 530, 532, 534, 536, 538... dose examples 550, 552, 554, 556, 558... shapes, patterns, characters 560.. shapes, patterns 1000, 1002, 1004, 1006.. Character 1010, 1012...parameterized characters

Claims (1)

201015234 VII. Patent Application Range: 1. A method for manufacturing a surface having a plurality of slightly different patterns, the method comprising the steps of: utilizing a set of symbols on a template mask Forming these patterns on the surface, and reducing the number of shots and total write time by using a symbol change technique 2. The method of claim 1, wherein the symbol change technique comprises changing a one-element dose. 3. The method of claim 1, wherein the emission from the plurality of symbols in the set of symbols overlaps. Wherein the symbol change technique 4. The method of claim 1 includes changing the position of a symbol. Wherein the symbol change technique 5. The method of claim 1 includes applying a partial exposure of a symbol in the set of symbols. 6. The method of claim 1, wherein the surface is a reticle. 7. The method of claim 6 wherein the slightly different patterns on the surface produce substantially the same pattern on a substrate. 8. The method of claim 7, wherein an equivalent criterion determines whether the patterns on the substrate are substantially identical. 9. The method of claim 8, wherein the equivalent criterion is based on a lithography simulation. 10. The method of claim 1, wherein the surface is a substrate. 39. The method of claim 1, further comprising the step of projecting lithography using symbol. 12. The method of claim 1, further comprising the steps of: designing a plurality of patterns to be formed on a surface, the patterns being slightly different; one to be used from the plurality of pattern designs Group symbol; and prepare a template mask with one of the group symbols. 13. A system for fabricating a surface having a plurality of slightly different patterns, the system comprising: a template mask having one of a set of symbols for forming the pattern on the surface; A device for reducing the number of transmissions and the total write time by using a symbol change technique. 14. The system of claim 13, wherein the symbol change technique comprises changing a one-element dose. 15. The system of claim 13 wherein the emissions from the plurality of symbols in the set of symbols overlap. 16. The system of claim 13, wherein the symbol change technique comprises changing a symbol position. 17. The system of claim 13, wherein the symbol change technique comprises applying a partial exposure of a symbol in the set of symbols. 18. A method for fabricating an integrated circuit having a surface having a plurality of slightly different patterns, the method comprising the following steps 201015234: utilizing a set of masks on a template The symbols are formed on the surface; and the number of shots and the total write time are reduced by utilizing a symbol change technique. 19. The method of claim 18, wherein the symbol change technique comprises changing a one-element dose. 20. The method of claim 18, wherein the emission of the plurality of symbols in the set of symbols overlaps. 21. The method of claim 18, wherein the symbol change technique comprises changing a symbol position. 22. The method of claim 18, wherein the symbol change technique comprises applying a partial exposure of a symbol in the set of symbols. 23. The method of claim 18, further comprising the step of projecting lithography using symbol. 24. The method of claim 18, further comprising the steps of: designing a plurality of patterns to be formed on a surface, the patterns being slightly different; one to be used from the plurality of pattern designs Group symbol; and prepare a template mask with one of the group symbols. 25. A method for fabricating an integrated circuit using an optical lithography process, the optical lithography process utilizing a reticle having a plurality of slightly different patterns, the method comprising the steps of: 41 201015234 The patterns are formed on the reticle using a set of symbols on a stencil mask; and the number of shots or total write time is reduced by utilizing a symbol change technique. 26. The method of claim 25, wherein the symbol change technique comprises changing a symbol dose. 27. The method of claim 25, wherein the emissions from the plurality of symbols in the set of symbols overlap. 28. The method of claim 25, wherein the symbol change technique comprises changing a symbol position. 29. The method of claim 25, wherein the symbol change technique comprises applying a partial exposure of a symbol in the set of symbols. 30. The method of claim 25, wherein the slightly different pattern on the reticle produces substantially the same pattern on a substrate. 31. The method of claim 30, wherein an equivalent criterion determines whether the patterns on the substrate are substantially identical. 32. The method of claim 31, wherein the equivalent criterion is based on a lithography simulation. 33. The method of claim 25, further comprising the step of using a symbol projection lithography. 34. The method of claim 25, further comprising the steps of: designing a plurality of patterns to be formed on a reticle, the patterns being slightly different; 201015234 from which the plurality of patterns are to be used One of the group symbols; and prepare a template mask with one of the group of symbols. 35. A method for optical proximity correction of a design comprising a set of patterns on a surface, the surface being used in an optical lithography process to transfer the set of patterns to a substrate, The method comprises the steps of: inputting a desired pattern for the substrate; and inputting some of the symbols of the complex symbol, the set of symbols being operable to form the pattern on the surface. 36. The method of claim 35, further comprising the step of: calculating a change in symbol or symbol position or a partial exposure of a symbol in the group of symbols. 37. The method of claim 35, further comprising the step of determining a number of shots or a total write time, wherein the number of shots or the total write time is reduced. 38. The method of claim 35, further comprising the step of overlapping a plurality of symbols in the set of symbols to form the pattern on the surface. 39. The method of claim 35, wherein the subset of the patterns on the surface consists of patterns of variants that are slightly different from one another. 40. The method of claim 39, wherein the slightly different patterns on the surface produce substantially the same pattern on the substrate. 41. The method of claim 40, wherein an equivalent criterion determines whether the patterns on the substrate are substantially identical. 43. The method of claim 41, wherein the equivalent criterion is based on a lithography simulation. 43. A method for optical proximity correction of a design comprising one of a set of patterns on a surface, the surface being used in an optical lithography process to transfer the set of patterns to a substrate, The method includes the steps of inputting possible characters based on a set of symbols in a predetermined symbol, and the characters are changed by using a pair of symbols or changing a symbol position or applying the set of predetermined symbols One of the partial exposures of a symbol is calculated to determine. 44. The method of claim 43, wherein the method comprises the steps of: selecting a character from the possible characters; calculating the transfer pattern on the substrate based on the selected character; and if from the calculating step One of the errors exceeds a predetermined threshold and another character is selected from the possible characters. 45. The method of claim 43, wherein the possible characters are parameterized characters. 46. A method of generating characters, comprising the steps of: obtaining a set of predetermined symbols as a basis for the characters; and calculating a change in a symbol dose or a change in a symbol position or in the set of predetermined symbols The application of a portion of a symbol is exposed to produce additional characters. 47. The method of claim 46, wherein the characters are parameterized characters. 48. The method of claim 46, wherein the generated characters comprise a subset of characters and the characters in the subset comprise a plurality of 201015234 slightly different patterns. 49. The method of claim 46, further comprising the step of calculating a plurality of overlapping transmissions from one or more symbols in the set of predetermined symbols. a system for optical proximity correction designed for one of a set of patterns on a surface, the surface being used in an optical lithography process to transfer the set of patterns onto a substrate, The system comprises: a desired pattern for the substrate; and some of which are a set of symbols of a complex symbol, such as to form some pattern of the patterns on the surface. 51. The system of claim 50, further comprising means for calculating a change in a symbol dose or symbol position or a partial exposure of a symbol in the set of symbols. 52. The system of claim 50, further comprising means for determining a number of transmissions or a total write time, wherein the number of transmissions or the total write time is reduced. 53. The system of claim 50, wherein the plurality of symbols in the set of symbols are overlapped. 54. A system for optical proximity correction designed for one of a set of patterns on a surface, the surface being used in an optical lithography process to transfer the set of patterns to a substrate, The system includes means for inputting a possible character based on a symbol in a predetermined set of symbols, and the characters are used to change a symbol dose or change a symbol position or apply the set of predetermined symbols One of the partial exposures of a symbol is calculated to 45 201015234 decision. 55. The system of claim 54, wherein a character is selected from the possible characters, the transfer pattern on the substrate is calculated based on the selected character, and if the error from the calculation step exceeds Select another character from the possible characters at a predetermined threshold. 56. A system for generating characters, comprising: means for obtaining a set of predetermined symbols as a basis for the characters; and for calculating a change in a symbol or a change in a symbol position Or the application of a portion of a symbol in the predetermined set of symbols to produce a device of the characters. 57. The system of claim 56, wherein the characters produced are parametric characters. 58. The system of claim 56, wherein the generated characters comprise a subset of characters and the characters in each of the subsets form a plurality of slightly different patterns. 59. The system of claim 56, wherein the plurality of transmissions from the one or more symbols in the set of predetermined symbols are overlapped to produce at least one of the characters. 60. A method for rupturing or masking data preparation or proximity effect correction, comprising the steps of: inputting a pattern formed on a surface, a subset of the patterns being slightly different from each other And selecting a set of symbols, some of which are complex symbols, to form 201015234 of the plurality of patterns; wherein the number of transmissions or the total write time is reduced by using a symbol change technique. 61. The method of claim 60, wherein the slightly different patterns on the surface produce substantially the same pattern on a substrate. 62. The method of claim 61, wherein an equivalent criterion determines whether the patterns on the substrate are substantially identical. 63. The method of claim 62, wherein the equivalent criterion is based on a lithography simulation. 64. The method of claim 60, wherein the set of symbols is predetermined. 65. The method of claim 64, further comprising the step of entering a possible character based on the predetermined set of symbols. 66. The method of claim 65, wherein the characters are predetermined characters. 67. The method of claim 65, further comprising the step of deciding which characters to use to match one or more of the input patterns. 68. The method of claim 65, further comprising the step of optimizing the fracture or mask data preparation or proximity effect correction based on the number of shots or the write time. 69. The method of claim 65, wherein the characters comprise a subset of characters and each subset of characters comprises a plurality of slightly different patterns. 70. The method of claim 60, wherein the symbol change is a change in the symbol dose. 71. The method of claim 60, wherein the symbol change technique is to change the symbol position. 72. The method of claim 60, wherein the symbol change technique is to apply a partial exposure of a symbol in the set of symbols. 73. The method of claim 60, wherein the symbol changes a technical overlap symbol. 74. A system for breaking or masking data preparation or proximity effect correction, comprising: means for inputting a pattern to be formed on a surface, a subset of the patterns being slightly adjacent to each other a different variant; and means for selecting one of the complex patterns to form one of the plurality of patterns; wherein the set of symbols is suitably located on a template mask, and wherein the number of shots or The total write time is reduced by using a symbol change technique. 75. The system of claim 74, wherein the slightly different pattern on the surface produces substantially the same pattern on the substrate. 76. The system of claim 75, wherein an equivalent criterion determines whether the patterns on the substrate are substantially identical. 77. The system of claim 76, wherein the equivalent criterion is based on a lithography simulation. 78. The system of claim 74, further comprising means for inputting possible characters and determining which characters to use to match one or more patterns of the input patterns. The system of claim 78, further comprising a device for optimizing fracture or mask data preparation or proximity effect correction based on the number of shots or the write time. 80. The system of claim 78, wherein the characters comprise a subset of characters and each subset of characters comprises a plurality of slightly different patterns. 81. The system of claim 74, wherein the symbol change technique is to change the symbol dose. 8 2. The system of claim 7, wherein the symbol change technique is to change the symbol position. 8. The system of claim 7, wherein the symbol change technique is a partial exposure of a symbol in the set of symbols. 84. The system of claim 74, wherein the symbol change technique is an overlapping symbol. 49