TW201013476A - In-cell optical sensing input device and its method - Google Patents

In-cell optical sensing input device and its method Download PDF

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TW201013476A
TW201013476A TW97135473A TW97135473A TW201013476A TW 201013476 A TW201013476 A TW 201013476A TW 97135473 A TW97135473 A TW 97135473A TW 97135473 A TW97135473 A TW 97135473A TW 201013476 A TW201013476 A TW 201013476A
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transistor
line
sensing
circuit
input device
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TW97135473A
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Chinese (zh)
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TWI368158B (en
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Bo-Yang Chen
bo-sheng Shi
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Hannstar Display Corp
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Abstract

The present invention discloses an in-cell optical sensing input device and its method. The device includes a photosensitive circuit and a converting circuit. The photosensitive circuit is able to generate a sensing current signal based on the change of received light resulted from the occurrence of position triggering events. The converting circuit is connected to the photosensitive circuit and receives the sensing current signal. The converting circuit has a first transistor and a second transistor coupled to each other, which are driven by two positive/negative biases of the same cycle and different phase, so as to reciprocally switch and drive the first transistor and the second transistor for alternately converting the sensing current signal into sensing voltage signal. In the present invention, transistors are employed to replace the conventional resistor structure, so that the existing semiconductor array manufacturing process can still be used for manufacturing at the same time and can be integrated into the standard manufacturing process. Therefore, the transistors can be completely embedded and integrated into the display device without externally adding a layer of touch panel and extra resistor devices.

Description

201013476 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種觸控式顯示技術,特別是關於一種内嵌式 (In-Cell)光學感應輪入裝置以及光學感應輸入方法。 【先前技術】 按,觸控面板是使用者與電子設備溝通最簡單的方式,所以應用 可說是愈來愈廣泛,並發展出多種不同作動原理之觸控面板,常見者 包含電容式、電阻式、音波式、紅外線式、内嵌式(丨n_CeH)等觸控 φ 面板,其中以内嵌式觸控之發展最受矚目,相較於傳統的電阻式或電 容式等觸控面板,都需要額外的觸控面板安裝於顯示面板上,而内嵌 式觸控面板係直接將觸控功能内建整合至顯示面板内,而不再需要額 外的觸控面板,故具有重量輕、體積小以及高光學性能等優點,因此 受到相當的重視。 現有之内喪式觸控面板大多為光學式感應,其係藉由内嵌在顯示 面板内的光感測器(photo sensor)去偵測在面板上的光強度分布來 決定觸控位置事件;並利用非晶矽材質之光敏感性,該等光感測器可 以是直接沿用現有製程製作之非晶矽薄膜電晶體(a_SjTFT)感測器。 Q 再者’根據感光原理的不同,感光電路可分為二種模式,電荷模式和 電流模式。如第1圖所示之電荷模式,其係利用第一電晶體10的開啟 對儲存電容(Cst) 12進行充電,之後關閉第一電晶體1〇後,儲存電 容12上之電荷會因為第二電晶體14的光電流而產生漏電’當照光強 度愈大’漏電愈多’之後再開啟第一電晶體1〇去讀取儲存電容12剩 餘之電荷來決定觸控位置事件。再如第2圓所示之電流模式,其係利 用切換電晶體16的開啟使電流進入感測電晶體18,此感測電晶體18 之電流大小則與受光的程度大小有關,並直接讀取此電流大小來決定 觸控位置事件。 就電流模式感光電路而言,由於輸出的是感光電流訊號,但系統 5 201013476 處理電路多以電壓訊號為主軸,所以每一讀取線2〇皆連接至一電阻 22’如第3囷所示’以便將輸出的感光電流訊號轉換為感光電麼訊號, 並透過讀取線20傳送至一讀取電路24,以決定觸控位置事件^然而, 多數量的電阻一般需要利用額外安裝設置於印刷電路板上,相當沒有 效率,且成本較高。 有鑑於此,本發明提出一種内嵌式光學感應輸入裝置及其方法, 以解決上述問題。 、 【發明内容】 本發明之主要目的係在提出一種内嵌式光學感應輸入裝置及其方 ©法’其係利用電晶體設計取代原有電阻,以達轉換電流訊號為電壓訊 號之目的,且此電晶體可沿用現有半導體陣列製程同時製作,故可完 全内嵌整合至顯示裝置中。 本發明之3-目祕在提種喊絲學感應輸人裝置及其方 法’因其整合至標準化製程,且不須外加一層觸控面板及額外的電阻 元件,故成本最低,模組產品也相對輕薄,應用更為廣泛。 本發明之-實施態樣係揭示一種内喪式光學感應輸入裝置,其係 包括有複數個呈整齊排列之感應輸入單元,用以感應觸控位置事件, 每一感應輸入單元係包括至少一個或複數個感光電路以及一轉換電 〇 路,絲電路報據_触置料發生造毅妹度的大小變化而 產生一感應電流訊號;轉換電路連接此感光電路,並且 第-電晶體及第二電晶艘,以根據交互開關第一電晶體1= 而輪流將感應電流訊號轉換為感應電壓訊號。 本發明之另一實施態樣則是應用於上述裝置之一種内嵌式光學感 應輸入方法,其係先分別施加高準位電壓及低準位電壓至上述之第一 電晶體及第二電晶體之閘極,以開啟第—電晶體,關閉第二電晶艘, 炎利用第-電晶體將轉換電路產生之感應電流訊號轉換為感應電愿訊 號輸出;接著,再分別施加低準位電壓及高準位電壓至第一電晶體及 201013476 第二電晶體之閘極,以關閉第一電晶體,打開第二電晶體,並利用第 二電晶體將感應電流訊號轉換為感應電壓訊號輸出;最後係不斷重複 上述步驟,使第一電晶體與第二電晶體輪流對感光電路產生之感應電 流訊號轉換為感應電壓訊號,以利用該二電晶體極性轉換方式持續感 應觸控位置事件之發生與否。 底下藉由具體實施例配合所附的圖式詳加說明,當更容易暸解本 發明之目的、技術内容、特點及其所達成之功效。 【實施方式】 本發明係使用電晶體來取代傳統電阻的轉換,然而若使用單一電 ® 晶艘’存在有電荷捕陷(charge trapped)的問題,會造成電晶艘的臨 界電壓(Vt)位移’導致讀出訊號的不穩定而造成可靠性問題,故本 發明使用AC驅動,輪流供應不同的極性電壓給二電晶體之閘極、汲 極和源極’使捕陷電荷平衡,以解決Vt位移的問題,所以本發明藉由 AC驅動電晶體可以有效補償Vt位移。 本發明之内嵌式光學感應輸入裝置30係包含有複數個排列成陣 列的感光電路32,以設置對應於液晶顯示裝置上,請參考第4圖及第 5圓所示’本第一實施例係將一轉換電路34以及共用此轉換電路34 的數個感光電路32視為一個感應輸入單元;當然,不管感光電路32 的數量多寡或是結構差異,都可以配合使用本發明之轉換電路34。如 圖所示,每一感光電路32係包含一切換電晶體(SwitchTFT) 321及 一感測電晶體(Detector TFT) 322,此切換電晶體321根據閘極線 35的訊號’控制電流進入感測電晶體322,使感測電晶艘322可根據 受光程度產生一感應電流訊號。轉換電路34則包含二相耦接的第一電 晶體(T1) 341及第二電晶體(T2) 342,第一電晶體341與第二電 晶體342係連接至感光電路32 ’以根據其產生之交流驅動輪流將感應 電流訊號轉換為感應電壓訊號,再經由讀取線36傳送至讀取電路38, 以根據產生感應電流訊號之所處位置來決定觸控位置事件。其中,上 7 201013476 述切換電晶體321、感測電晶體322、第一電晶體341及第二電晶體 342皆係使用薄膜電晶體。 詳言之,在轉換電路34中,第二電晶體342之閘極係連接至一 第一偏壓線343,汲極連接至一第二偏壓線344,且第二電晶體342 之源極係連接至第一電晶體341之源極,以接收上述之感應電流訊 號,且第一電晶體341及第二電晶體342之源極皆連接至感光電路 32 ;第一電晶體341之閘極連接至第二偏壓線344,没極則連接至第 一偏壓線343 ’以利用第一偏壓線343與第二偏壓線344分別供應第 二電晶體342及第一電晶體341相同週期且相位互為相反之電壓訊 © 號。由於第一電晶體341和第二電晶體342係視同一個電阻之作用, 用以將感光電路32所感測到的電流訊號轉換為電壓訊號,且因該二電 晶體341、342係分別偏壓在以交流驅動的二相反相位之方波,使該 二電晶體341、342之電壓可隨時間變化其極性,以藉此平衡補陷電 荷。 底下係以第4圖配合第6圖來說明本發明之内嵌式光學感應輸入 方法’當閘極線35傳送訊號給切換電晶體321時,切換電晶體321 打開,使電流進入感測電晶體322,當使用者觸控面板時,對應之感 測電晶體322可根據受光程度的差異產生一感應電流訊號(丨photo), 並傳送至轉換電路34申。其中,轉換電路34係由二個電晶體組成, 所以驅動方式係具有二個階段:首先,在第一階段,請參閲第6(a)圖 所不,为別對第一偏壓線343與第二偏麼線344分別施以一高準位電 壓及一低準位電壓之偏壓,使第一電晶體341關閉,第二電晶體342 打開’此時’由第二電晶體342扮演電阻之作用,將感光電路32輸 出之感應電流訊號(丨photo)轉換感應電麼訊號後經讀取線36傳送至 讀取電路38。接著,在第二階段,請參閱第6(b)圖所示,分別對第一 偏壓線343與第二偏壓線344分別施以低準位電壓與高準位電壓之偏 壓,使第一電晶體341打開,第二電晶體342關閉,此時,由第一電 8 201013476 j 341 b廣電阻之作用,將感光電路32輸出之感應電流訊號轉換 *電屋訊號後㈣取線傳送至讀取電路。如此稍重複上述二階段 =驅動方式’使第-電晶趙341與第二電晶艘342輪流將感應電流訊 號轉換為感應電應訊號,以利用該二電晶體34彳、342極性轉換方式 持,感朗控位置事件之發生與否,並藉由其極㈣轉絲補償補陷 電荷,以避免臨界錢Vt產生位移現象。 除了上述之第一實施例之外,本發明使用二個電晶想作為轉換電 路亦具有其他的不同實施例。 本發明之第二實酬如第7 @所示,為了使感光電路32輸出之感 應電流訊號更加穩定,更可增設一電容4〇連接感光電路32,並與轉 換電路34並聯,以作為一 RC電路,使感光電路於輸出一穩定的感 應電屋訊號。其中,此電容4〇、结構係可以現有半導體陣列製程製作完 成;其餘結構與驅動方式皆與第一實施例相同,故於此不再資述。 由於有彳機制會導致臨界電位移的發生,例如有可以取決於不 同電晶體之結構、材料或製程等,因此,本發明之第三實施例導入更 多的電壓訊號來調整電晶艘之電壓。如第8圖所示,第—電晶體⑷ 之汲極連接至第-偏壓線343,_連接至—第三偏壓線3二,且源 極連接至第二電晶體342之源極,且第一電㈣341及第二電晶艘⑽ 之源極皆連接至感光電路;第二電晶體342之汲極連接至第二偏廢線 344,閘極則連接至一第四偏壓線346 ;其中,第一偏壓線撕與第 四偏壓線346係提供相同相位且不同準位的電壓訊號;第二偏塵線3私 與第二偏壓線345為相同相位且不同準位的電㈣號。本實施例之驅 動方式在第-階段(τι)時,對第一偏廢線343與第四偏壓線346分 別施以不同準位之低準位電壓,且對第二偏麼線344與第三偏魔線撕 分別施以不同準位之高準位電壓,使第一電晶體341打開,第二電晶 體342關,此時,由第-電晶體341扮演電阻之作用將感光電^ 32輸出之感應電流訊號(|ph〇t0)轉換感應電壓訊號。接著,在第二 201013476 階,(T2)對第—偏壓線343與第四偏屋線挪分別施以不同準位 ^準位健’且對第二偏屋線344與第三偏觀撕分別施以不同 =之低準位電麼,使第一電晶體州關閉,第二電晶鍾撕打開, 晶體342扮演電阻之伽,將感光電路產生之感應電 ,a應電壓訊號。如此不斷重複上述二階段之媒動方式,使 電曰曰體341與第二電晶體342輪流將感應電流訊號轉換為 壓訊號。201013476 IX. Description of the Invention: [Technical Field] The present invention relates to a touch display technology, and more particularly to an in-cell optical inductive wheeling device and an optical sensing input method. [Prior Art] Press, the touch panel is the easiest way for users to communicate with electronic devices, so the application can be said to be more and more extensive, and a variety of touch panels with different actuation principles have been developed. Common types include capacitive and resistive devices. Touch φ panel, such as acoustic, infrared, and in-line (丨n_CeH), among which the development of in-line touch is the most popular, compared to traditional resistive or capacitive touch panels. The additional touch panel is mounted on the display panel, and the in-cell touch panel directly integrates the touch function into the display panel, and no need for an additional touch panel, so the weight is small and small. High optical performance and other advantages, so it has received considerable attention. Most of the existing internal touch panels are optical sensing, which determines the touch position event by detecting the light intensity distribution on the panel by a photo sensor embedded in the display panel; And using the light sensitivity of the amorphous germanium material, the light sensor can be an amorphous germanium thin film transistor (a_SjTFT) sensor directly used in the existing process. Q Further, depending on the principle of light sensing, the photosensitive circuit can be divided into two modes, a charge mode and a current mode. The charge mode as shown in FIG. 1 charges the storage capacitor (Cst) 12 by the opening of the first transistor 10, and then turns off the charge on the storage capacitor 12 after the first transistor 1 is turned off. The photocurrent of the transistor 14 generates a leakage current. 'When the illumination intensity is increased, the more the leakage is, the more the first transistor 1 is turned on, and the remaining charge of the storage capacitor 12 is read to determine the touch position event. In the current mode shown by the second circle, the current is entered into the sensing transistor 18 by the switching of the switching transistor 16. The current of the sensing transistor 18 is related to the degree of receiving light, and is directly read. This current magnitude determines the touch location event. In the case of the current mode photosensitive circuit, since the output is a photosensitive current signal, the system 5 201013476 processing circuit mostly uses a voltage signal as a main axis, so each read line 2 is connected to a resistor 22' as shown in FIG. 'In order to convert the output photosensitive current signal into a photosensitive signal, and transmit it to a reading circuit 24 through the reading line 20 to determine the touch position event. However, a large number of resistors generally need to be installed in the printing with additional mounting. On the board, it is quite inefficient and costly. In view of this, the present invention provides an in-cell optical sensing input device and method thereof to solve the above problems. SUMMARY OF THE INVENTION The main object of the present invention is to provide an in-cell optical inductive input device and its method of using the transistor design to replace the original resistor, so as to achieve the purpose of converting the current signal into a voltage signal, and The transistor can be fabricated simultaneously using existing semiconductor array processes, so that it can be fully embedded and integrated into the display device. The invention has the lowest cost and the lowest cost in the invention. The invention is integrated into a standardized process without the need for a touch panel and additional resistance components. Relatively thin and light, the application is more extensive. The embodiment of the present invention discloses an internal optical input device including a plurality of sensing input units arranged in a neat manner for sensing touch position events, each of the sensing input units including at least one or a plurality of photosensitive circuits and a conversion electric circuit, the wire circuit report _ contact material occurs to change the size of the sister to generate an induced current signal; the conversion circuit is connected to the photosensitive circuit, and the first transistor and the second battery The crystal boat converts the induced current signal into an induced voltage signal in turn according to the first transistor 1= of the interactive switch. Another embodiment of the present invention is an in-cell optical sensing input method applied to the above device, which first applies a high-level voltage and a low-level voltage to the first transistor and the second transistor, respectively. The gate is opened to turn on the first transistor, and the second transistor is turned off. The first transistor converts the induced current signal generated by the conversion circuit into an inductive power signal output; and then applies a low level voltage and High-level voltage to the first transistor and the gate of the 201013476 second transistor to turn off the first transistor, turn on the second transistor, and use the second transistor to convert the induced current signal into an induced voltage signal output; The steps are continuously repeated, so that the first transistor and the second transistor alternately convert the induced current signal generated by the photosensitive circuit into an induced voltage signal, so as to continuously sense the occurrence of the touch position event by using the two transistor polarity switching manner. . The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the embodiments and the accompanying drawings. [Embodiment] The present invention uses a transistor to replace the conversion of a conventional resistor. However, if a single charge is used, there is a problem of charge trapping, which causes a threshold voltage (Vt) displacement of the cell. 'The instability of the read signal causes reliability problems, so the present invention uses an AC drive to alternately supply different polarity voltages to the gate, drain and source of the two transistors to balance the trapping charge to solve the Vt The problem of displacement, so the present invention can effectively compensate for Vt displacement by AC driving the transistor. The in-cell optical inductive input device 30 of the present invention includes a plurality of photosensitive circuits 32 arranged in an array to be disposed corresponding to the liquid crystal display device. Please refer to FIGS. 4 and 5 for the first embodiment. A conversion circuit 34 and a plurality of photosensitive circuits 32 sharing the conversion circuit 34 are regarded as one sensing input unit; of course, the conversion circuit 34 of the present invention can be used in combination with the number of the photosensitive circuits 32 or the structural difference. As shown in the figure, each photosensitive circuit 32 includes a switching transistor (SwitchTFT) 321 and a Detector TFT 322. The switching transistor 321 controls the current to enter the sensing according to the signal of the gate line 35. The transistor 322 enables the sensing cell 322 to generate an induced current signal according to the degree of light reception. The conversion circuit 34 includes a first transistor (T1) 341 and a second transistor (T2) 342 coupled to the second phase, and the first transistor 341 and the second transistor 342 are connected to the photosensitive circuit 32' to generate The AC drive turns the induced current signal into an induced voltage signal, and then transmits it to the reading circuit 38 via the read line 36 to determine the touch position event according to the position at which the induced current signal is generated. The above-mentioned 7 201013476 switching transistor 321 , sensing transistor 322 , first transistor 341 and second transistor 342 all use a thin film transistor. In detail, in the conversion circuit 34, the gate of the second transistor 342 is connected to a first bias line 343, the drain is connected to a second bias line 344, and the source of the second transistor 342 Connected to the source of the first transistor 341 to receive the induced current signal, and the sources of the first transistor 341 and the second transistor 342 are connected to the photosensitive circuit 32; the gate of the first transistor 341 Connected to the second bias line 344, the pole is connected to the first bias line 343' to supply the second transistor 342 and the first transistor 341 with the first bias line 343 and the second bias line 344, respectively. Voltage signals with periods and phases opposite to each other. Since the first transistor 341 and the second transistor 342 act as the same resistor, the current signal sensed by the photosensitive circuit 32 is converted into a voltage signal, and the two transistors 341 and 342 are respectively biased. In a square wave of two opposite phases driven by an alternating current, the voltage of the two transistors 341, 342 can be changed in polarity with time to thereby balance the trapped charge. The in-line optical sensing input method of the present invention will be described with reference to FIG. 4 in conjunction with FIG. 6 'When the gate line 35 transmits a signal to the switching transistor 321 , the switching transistor 321 is turned on to allow current to enter the sensing transistor. 322, when the user touches the panel, the corresponding sensing transistor 322 can generate an inductive current signal (丨photo) according to the difference in the degree of received light, and transmit it to the conversion circuit 34. Wherein, the conversion circuit 34 is composed of two transistors, so the driving method has two stages: First, in the first stage, please refer to FIG. 6(a), not to the first bias line 343. A bias voltage of a high level voltage and a low level voltage is applied to the second bias line 344 to turn off the first transistor 341, and the second transistor 342 is turned on 'this time' by the second transistor 342. The function of the resistor converts the induced current signal (丨photo) outputted by the photosensitive circuit 32 into the sensing circuit 38 and transmits it to the reading circuit 38 via the reading line 36. Next, in the second stage, as shown in FIG. 6(b), the first bias line 343 and the second bias line 344 are respectively biased with a low level voltage and a high level voltage. The first transistor 341 is turned on, and the second transistor 342 is turned off. At this time, the induced current signal outputted by the photosensitive circuit 32 is converted by the first electric 8 201013476 j 341 b, and the (4) line is transmitted. To the read circuit. The above two-stage=drive mode is repeated as described above, so that the first-electro-ceramic 341 and the second electro-crystallized 342 alternately convert the induced current signal into an inductive electrical signal to utilize the polarity conversion mode of the two transistors 34彳 and 342. The sense is controlled by the occurrence of the position event, and the charge is compensated by the pole (four) wire to avoid the displacement of the critical money Vt. In addition to the first embodiment described above, the present invention has two different embodiments as the switching circuit. As shown in the seventh embodiment of the present invention, in order to make the induced current signal outputted by the photosensitive circuit 32 more stable, a capacitor 4 is connected to the photosensitive circuit 32 and connected in parallel with the conversion circuit 34 to serve as an RC. The circuit causes the photosensitive circuit to output a stable inductive electric house signal. Wherein, the capacitor 4 〇 and the structure can be completed by the existing semiconductor array process; the rest of the structure and the driving method are the same as those of the first embodiment, and therefore will not be described herein. Since the enthalpy mechanism causes the occurrence of critical electrical displacement, for example, depending on the structure, material or process of the different transistors, the third embodiment of the present invention introduces more voltage signals to adjust the voltage of the electric crystal boat. . As shown in FIG. 8, the drain of the first transistor (4) is connected to the first bias line 343, the third is connected to the third bias line 3, and the source is connected to the source of the second transistor 342. The first electric (four) 341 and the second electro-crystal boat (10) are connected to the photosensitive circuit; the second transistor 342 has a drain connected to the second waste line 344, and the gate is connected to a fourth bias line 346; The first bias line and the fourth bias line 346 provide voltage signals of the same phase and different levels; the second dust line 3 and the second bias line 345 are of the same phase and different levels of electricity. (four) number. In the driving mode of the embodiment, in the first stage (τι), the first offset line 343 and the fourth bias line 346 are respectively applied with different level low level voltages, and the second partial lines 344 and the The third partial magic wire tearing is applied with a high level voltage of different levels, so that the first transistor 341 is turned on, and the second transistor 342 is turned off. At this time, the photo transistor is acted as a resistor by the first transistor 341. The output induced current signal (|ph〇t0) converts the induced voltage signal. Then, in the second stage 201013476, (T2) applies a different level to the first bias line 343 and the fourth partial line, and the second partial line 344 and the third partial tear Applying different low-level powers respectively, the first transistor state is turned off, the second electro-crystal clock is torn open, and the crystal 342 acts as a resistance gamma, which generates the induced electricity of the photosensitive circuit, and a should be a voltage signal. The above two-stage media mode is continuously repeated, so that the electric body 341 and the second transistor 342 alternately convert the induced current signal into a pressure signal.

本發明之第四實施例如第9圖所示,在轉換電路34中,將第一電 明體341之閘極連接至第一偏麼線343,汲極連接至一固定電麼源, 且第-電晶艘341之源極連接至第二電晶艘342之源極,以接收感應 電流訊號,第二電晶艘之閘極則連接至第二偏壓線344,汲極亦連接 至相同之SI定電壓源(Vc〇nstant) 347。當然由第—偏壓線343與第二 偏壓線344分別供應給第一電晶艘341與第二電晶體之電麼,相同週 期且相位互為相反之電壓訊號,使第一電晶體34彳和第二電晶體私2 輪流將感應電流訊號轉換為感應電壓訊號。 不管疋上述何種實施例,本發明係利用電晶體設計取代原有電 阻,以達轉換電流訊號為電壓訊號之目的,且因電晶髏可沿用現有半 導體陣列製程同時製作,故可完全内嵌整合至現有顯示裝置中。再者, 由於本發明可整合至標準化製程,而不須再外加一層觸控面板及額外 的電阻元件,故成本最低,模組產品也相對輕薄,使其應用更為廣泛。 以上所述之實施例僅係為說明本發明之技術思想及特點,其目的 在使熟習此項技藝之人士能夠瞭解本發明之内容並據以實施,當不能 以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均 等變化或修飾,仍應涵蓋在本發明之專利範圍内。 【圖式簡單說明】 第1圖為習知電荷式感光電路之電路示意圖。 第2圖為習知電流式感光電路之電路示意圖。 201013476 第3圖為習知使用電阻轉換訊號之感光電路示意圖。 第4圖為本發明光學感應輸入裝置之第一實施例的電路示意圖。 第5圖為第4圖之局部電路放大示意圖。 第6(a)圖為本發明第一實施例於第一階段驅動之電路示意圖。 第6(b)圖為本發明第一實施例於第二階段驅動之電路示意圖。 第7圖為本發明之第二實施例的電路示意圖。 第8圖為本發明之第三實施例的電路示意圖。 第9圖為本發明之第四實施例的電路示意圖。 【主要元件符號說明】 © 10第一電晶體 12儲存電容 14第二電晶體 16切換電晶體 18感測電晶體 20讀取線 22 電阻 24讀取電路 30内嵌式光學感應輸入裝置 ® 32感光電路 321切換電晶體 322感測電晶艎 34轉換電路 341第一電晶體 342第二電晶體 343第一偏壓線 344第二偏壓線 345第三偏壓線 11 201013476 346第四偏壓線 347固定電壓源 35閘極線 36讀取線 38讀取電路 40 電容In a fourth embodiment of the present invention, as shown in FIG. 9, in the conversion circuit 34, the gate of the first electrical body 341 is connected to the first bias line 343, the drain is connected to a fixed power source, and The source of the cell 341 is connected to the source of the second cell 342 to receive the induced current signal, the gate of the second cell is connected to the second bias line 344, and the drain is also connected to the same The SI constant voltage source (Vc〇nstant) 347. Of course, the first bias line 343 and the second bias line 344 are respectively supplied to the first transistor 341 and the second transistor, and the voltage signals of the same period and opposite phases are opposite to each other, so that the first transistor 34彳 and the second transistor privately rotate the induced current signal into an induced voltage signal. Regardless of the above embodiments, the present invention replaces the original resistor with a transistor design to achieve the purpose of converting the current signal into a voltage signal, and since the transistor can be simultaneously fabricated using the existing semiconductor array process, it can be completely embedded. Integrated into existing display devices. Moreover, since the present invention can be integrated into a standardized process without the need for an additional touch panel and additional resistive components, the cost is the lowest and the module products are relatively thin and light, making it more widely used. The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a circuit diagram of a conventional charge type photosensitive circuit. Figure 2 is a schematic circuit diagram of a conventional current-type photosensitive circuit. 201013476 Figure 3 is a schematic diagram of a photosensitive circuit using a resistor-switching signal. Fig. 4 is a circuit diagram showing the first embodiment of the optical sensing input device of the present invention. Fig. 5 is an enlarged schematic view showing a partial circuit of Fig. 4. Fig. 6(a) is a circuit diagram showing the driving of the first stage in the first embodiment of the present invention. Fig. 6(b) is a circuit diagram showing the driving of the second stage in the first embodiment of the present invention. Figure 7 is a circuit diagram showing a second embodiment of the present invention. Figure 8 is a circuit diagram showing a third embodiment of the present invention. Figure 9 is a circuit diagram showing a fourth embodiment of the present invention. [Main component symbol description] © 10 first transistor 12 storage capacitor 14 second transistor 16 switching transistor 18 sensing transistor 20 reading line 22 resistance 24 reading circuit 30 in-line optical sensing input device ® 32 sensing The circuit 321 switches the transistor 322 to sense the transistor 34 conversion circuit 341 the first transistor 342 the second transistor 343 the first bias line 344 the second bias line 345 the third bias line 11 201013476 346 the fourth bias line 347 fixed voltage source 35 gate line 36 read line 38 read circuit 40 capacitor

Claims (1)

201013476 十、申請專利範圍: 1· 一種内嵌式光學感應輸入裝置,包括: 複數個感應輸入單元,其係呈陣列排列,每一該感應輸入單元係包 括: 至少一感光電路’其係根據受光程度大小產生一感應電流訊號;以 及 一轉換電路,包含二相耦接的第一電晶體及第二電晶體,該第一電 晶體與該第二電晶體係連接該感光電路,以根據交互開關輪流將 該感應電流訊號轉換為感應電壓訊號。 © 2·如申請專利範圍第1項所述之内嵌式光學感應輸入裝置,其中該感 光電路包括一切換電晶體及一感測電晶體,該切換電晶體控制電流 進入該感測電晶艎’該感測電晶體則根據受光程度產生感應電流訊 號。 3. 如申請專利範圍第1項所述之内喪式光學感應輸入裝置,更包括一 讀取電路,其係利用複數條讀取線分別連接至每一該感應輸入單 元’使該讀取電路取得該感應電壓訊號。 4. 如申請專利範圍第1項所述之内嵌式光學感應輸入裝置,更包括二 偏壓線分別連接至該第一電晶體及第二電晶體,以分別供應該第一 _ 電晶體及第二電晶體相位互為相反之電壓。 5. 如申請專利範圍第4項所述之内嵌式光學感應輸入裝置,其中該二 偏壓線係為第一偏壓線及第二偏壓線,使該第一電晶體之閘極連接 至該第二偏壓線,汲極連接至該第一偏壓線,且源極連接至該第二 電晶體之源極,該第二電晶體之閘極連接至該第一偏壓線 連接至該第二偏壓線,其中該第-及該第二電晶趙之該源極連接^ 該感光電路。 6. 如申請專利範圍第1項所述之内嵌式光學感應輸入裝置,更包含四 偏麼線係為第一、第二、第三和第四偏壓線,該第一電晶趙之及 13 201013476 ^連接至該第-偏壓線,閘極連接至一第三偏麟,且該第一電晶 =源極連接至該第二電额之源極,該第二電晶狀汲極連接至 2 -偏Μ線’閘極則連接至—第四偏愿線;其中,該第一偏磨線 蔽該第四偏麼線為接收相同相位且不同準位的電壓訊號;該第二偏 線與該第二偏1料相同相位且*同準位的錢訊號,其中該第 一及該第二電晶體之贿極連接至域光電路。 •如申晴專概圍第4項所述之祕式光學祕輸人裝置,其中該二 偏壓線係為第H線及第二偏壓線,使該第-電晶趙之閘極連接 ❹ 至該第一偏屋線,汲極連接至-固定電祕,且源極連接至該第二 電晶體之源極,該第二電晶艘之閘極連接至該第二触線,汲極則 連接至該固定電魏,其巾該第-及該第二電晶體之該源極連接至 該感光電路。 8·如申請專利範圍第1項所述之内嵌式光學感應輸入裝置,更包括一 電容連接該感光電路,且與該轉換電路並聯。 9. 如申請專利範圍第1項所述之内嵌式光學感應輸入裝置,其中該第 一電晶體與第二電晶體係為薄膜電晶體。 10. 如申請專利範圍第1項所述之内散式光學感應輸入裝置,其中每一 0 該感應輸入單元更包括複數個該感光電路,以共用該轉換電路。 11. -種内嵌式光學感應輸人方法,其係_—第—電晶體與第二電晶 艘將至少-感光電路產生之感應電流訊號轉換為感應電壓訊號;該 光學感應輸入方法包括下列步驟: 分別施加_高準位電壓及-鮮位電壓至該第_電紐之問極及 該第二電晶體之閘極’將該第-電晶體開啟,該第二電晶體關 閉’以利用該第-電晶黯喊應電流訊號轉換為賊應電壓訊 號輸出; 分別施加該低準位電壓及該高準位電壓至該第一電晶體之閘極及 該第二電晶體之閘極,將該第一電晶體關閉,該第二電晶體打 201013476 開,以利用該第二電晶體將該感應電流訊號轉換為該感應電壓訊 號輸出;以及 重複上述步驟,以利用該第一電晶體與該第二電晶體輪流對該感光 電路產生之該感應電流訊號轉換為該感應電壓訊號。 12. 如申請專利範圍第11項所述之内嵌式光學感應輸入方法,其中該 咼準位電壓及該低準位電壓係分別為相同週期,相反相位之電壓訊 號。 13. 如申請專利範圍第11項所述之内嵌式光學感應輸入方法,其中該 感光電路包括一切換電晶體及一感測電晶髏,該切換電晶體控制電 〇 流進入該感測電晶體,該感測電晶體則根據受光程度產生感應電流 訊號。 14. 如申請專利範圍第11項所述之内嵌式光學感應輸入方法,其中該 高準位電壓及該低準位電壓係利用至少二偏壓線,以供應該第一電 晶體或第二電晶體互為反相之電壓。 15_如申請專利範圍第11項所述之内嵌式光學感應輸入方法,其中該 感應電壓訊號係經至少一讀取線傳送至一讀取電路,以決定產生該 感應電流訊號之觸控位置事件。 16· 一種内嵌式光學感應輸入裝置,包括: ® 複數個感應輸入單元,其係呈陣列排列,每一該感應輸入單元係包 括: 至少一感光電路;以及 一電路,包含一第一電晶體及一第二電晶體,該第一電晶髏之源 極連接該第二電晶體之源極,且該二源極係連接該感光電路, 該第一電晶體之没極係連接一第一偏壓線,閘極係連接至一第 二偏塵線,該第二電晶體之汲極係連接一第二偏壓線,閘極係 連接至一第四偏壓線。 17.如申請專利範圍第16項所述之内嵌式光學感應輸入裝置,其中該 15 201013476 第一偏壓線係連接該第四偏壓線,且該第二偏壓線係連接該第三偏 壓線。 18·如申請專利範圍第16項所述之内嵌式光學感應輸入裝置,其中該 第一偏壓線係連接該第二偏壓線。 19.如申請專利範圍第16項所述之内嵌式光學感應輸入裝置,其中該 感光電路包括一切換電晶體及一感測電晶體,該切換電晶體控制電 流進入該感測電晶體,該感測電晶體則根據受光程度產生感應電流 訊號。201013476 X. Patent application scope: 1. An in-line optical sensing input device, comprising: a plurality of sensing input units arranged in an array, each of the sensing input units comprising: at least one photosensitive circuit 'based on receiving light a level circuit generates an inductive current signal; and a conversion circuit comprising a first transistor coupled to the second phase and a second transistor, the first transistor and the second transistor system being coupled to the photosensitive circuit to be based on an interactive switch The induced current signal is alternately converted into an induced voltage signal. The in-cell optical inductive input device of claim 1, wherein the photosensitive circuit comprises a switching transistor and a sensing transistor, and the switching transistor controls current into the sensing transistor. 'The sensing transistor generates an induced current signal according to the degree of light reception. 3. The funnel optical input device according to claim 1, further comprising a read circuit, wherein the plurality of read lines are respectively connected to each of the inductive input units to make the read circuit Obtain the induced voltage signal. 4. The in-cell optical inductive input device of claim 1, further comprising two bias lines respectively connected to the first transistor and the second transistor to respectively supply the first transistor and The second transistors are opposite in phase to each other. 5. The in-cell optical inductive input device of claim 4, wherein the two bias lines are a first bias line and a second bias line, such that the first transistor is connected to the gate. Up to the second bias line, the drain is connected to the first bias line, and the source is connected to the source of the second transistor, and the gate of the second transistor is connected to the first bias line And to the second bias line, wherein the source of the first and the second transistor is connected to the photosensitive circuit. 6. The in-cell optical inductive input device according to claim 1, further comprising a four-bias line for the first, second, third and fourth bias lines, the first electro-crystal Zhao Zhi And 13 201013476 ^ connected to the first bias line, the gate is connected to a third bias, and the first transistor = source is connected to the source of the second power, the second transistor The pole is connected to the 2-biased line' gate is connected to the fourth bias line; wherein the first eccentric line shields the fourth biased line as a voltage signal receiving the same phase and different levels; The second signal is the same phase and the same level of the second signal, wherein the first and the second transistor are connected to the domain optical circuit. • The secret optical secret input device according to item 4 of Shen Qing, wherein the two bias lines are the H-th line and the second bias line, so that the gate of the first-electro-crystal Zhao is connected.至 to the first partial housing line, the drain is connected to the fixed frequency, and the source is connected to the source of the second transistor, and the gate of the second transistor is connected to the second line, The pole is connected to the fixed electrical device, and the source of the first and the second transistor is connected to the photosensitive circuit. 8. The in-cell optical inductive input device of claim 1, further comprising a capacitor connected to the photosensitive circuit and connected in parallel with the conversion circuit. 9. The in-cell optical inductive input device of claim 1, wherein the first transistor and the second transistor system are thin film transistors. 10. The internal optical optical input device of claim 1, wherein each of the sensing input units further comprises a plurality of the photosensitive circuits to share the conversion circuit. 11. An in-line optical inductive input method, wherein the _-the first transistor and the second electro-crystal boat convert at least the induced current signal generated by the photosensitive circuit into an induced voltage signal; the optical sensing input method comprises the following Step: respectively applying a _ high-level voltage and a fresh-spot voltage to the Ω-electrode and the gate of the second transistor to turn on the first transistor, and the second transistor is turned off to utilize The first-electro-crystal squeaking current signal is converted into a thief voltage signal output; respectively applying the low-level voltage and the high-level voltage to the gate of the first transistor and the gate of the second transistor, Turning off the first transistor, the second transistor is turned on 201013476 to convert the induced current signal into the induced voltage signal output by using the second transistor; and repeating the above steps to utilize the first transistor and The second transistor rotates the induced current signal generated by the photosensitive circuit into the induced voltage signal. 12. The in-cell optical sensing input method according to claim 11, wherein the 咼 level voltage and the low level voltage are respectively voltage signals of the same period and opposite phases. 13. The in-cell optical sensing input method according to claim 11, wherein the photosensitive circuit comprises a switching transistor and a sensing transistor, the switching transistor controlling the electrical turbulence into the sensing power The crystal, the sensing transistor generates an induced current signal according to the degree of light reception. 14. The in-cell optical sensing input method of claim 11, wherein the high level voltage and the low level voltage utilize at least two bias lines to supply the first transistor or the second The transistors are mutually inverted voltages. The in-cell optical sensing input method of claim 11, wherein the induced voltage signal is transmitted to a reading circuit via at least one read line to determine a touch position at which the induced current signal is generated. event. 16· An in-line optical sensing input device comprising: a plurality of sensing input units arranged in an array, each of the sensing input units comprising: at least one photosensitive circuit; and a circuit comprising a first transistor And a second transistor, the source of the first transistor is connected to the source of the second transistor, and the two sources are connected to the photosensitive circuit, and the first transistor is connected to the first The bias line is connected to a second dust line, the drain of the second transistor is connected to a second bias line, and the gate is connected to a fourth bias line. The in-cell optical inductive input device of claim 16, wherein the 15 201013476 first bias line is connected to the fourth bias line, and the second bias line is connected to the third Bias line. 18. The in-cell optical inductive input device of claim 16, wherein the first bias line is coupled to the second bias line. 19. The in-cell optical inductive input device of claim 16, wherein the photosensitive circuit comprises a switching transistor and a sensing transistor, the switching transistor controlling current entering the sensing transistor, The sensing transistor generates an induced current signal according to the degree of light reception.
TW97135473A 2008-09-16 2008-09-16 In-cell optical sensing input device and its method TW201013476A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI507946B (en) * 2013-06-11 2015-11-11 Au Optronics Corp Touch sensing panel and sensing circuit therein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI507946B (en) * 2013-06-11 2015-11-11 Au Optronics Corp Touch sensing panel and sensing circuit therein

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