201013322 2S145twf.doc/n. 九、發明說明： 【發明所屬的技術領域】 本發明是有關於一種製作圖案化材料層的方法；特別 是有關於一種藉由半調式光罩(half-tone mask)的特性來提 高圖案化材料層之最小線寬的方法。 【先前技術】 隨著科技的進步’微電子工業的製造技術一日千里， φ 其中微影技術扮演著相當重要的角色。微影技術主要是利 用光源將光罩上所設計好的圖案藉由曝光轉移至感光材料 上，並可進一步利用此圖案化的感光材料作為蝕刻罩幕。 然而’在微影製程中，圖案的線寬與所使用的光源之波長 或聚焦的透鏡之數值孔徑等參數相關，因此線寬的最小值 是有極限的。尤其隨著電子元件積集度不斷地增加，元件 内部的圖案線寬也相對地縮小，相對使得微影製程的難度 提高。 在液晶顯示面板的製程中，經常使用到上述微影技術來製 作例如薄膜電晶體（thin-film transistor, TFT )、晝素結構、 引線等元件。然而，上述元件的製作同樣受限於習知曝光製 程的限制，而無法得到更佳的元件積集度與元件效能。圖i 即繪示一種習知的薄膜電晶體。如圖1所示，受限於習知 曝光製程的尺寸極限(critical diinensi〇n，CD)，薄膜電晶體的 通道寬度(channel width) W的最小極限值大約在4微米(μιη) 左右。由於薄膜電晶體的充電能力以及能量損耗跟通道寬度相 關’在無法進一步降低通道寬度的情況下，相對使得薄膜電晶 5 201013322 .…一„—J9 28145twf_doc/n 體的效能受到限制。另—太品&々 、％曰@_ ^ 方面，線寬過大的元件圖案也會佔用 =顯不面板上的可用面積，導致畫素 【發明内容】 干「年 ΜίίΓίΓζ種製㈣的綠，可以在材 料層上开/成具有較小線寬的圖案。 層。本發㈣提供—種具有較小線寬_關案化材料 ❹ ❹ =發明提出的製作_化材制的方法， =接供基材，並且基材上覆蓋感光材料層。 色概罩於基材3。料色概罩具有半 色調圖案，且半色調圖案的透光率介於佩至祕之間。 =藉：ί色調光罩的半色調圖案對感光材料層的曝光 £域進4光，並錢部分曝絲域 於感光材料層的厚度。接著，顯Μ度霄買上寺 #圖安.甘士顯衫感先材料層，以形成曝 t光圖案暴露出局部的基材，且曝光圖案 的最小線見小於半色調圖案的最小線寬。 在本發明之-實施例中’上述方法另包括在顯影感光 材料層之後，以感光材料層為罩幕來餘刻基材。. 在本發明之一實施例中，上被Η拷十TZ!兮ΓΤ 於或等於_。 祕細案的最小線寬小 為月ίΓ實施例中’上述半色調圖案的最小線寬 為L ’而曝光圖案的最小線寬為L，，且L’/L介於 0.5 之間。 、·-^，、 在本發明之-實施例中’上述感光材料層的厚度介於 6 201013322 ---------iy 28145twf.doc/n Ιμπι 與 1.3pm 之間。 本發明提出一種圖案化材料層，由基材製作而成。首 先在基材上覆蓋感光材料層，並且藉由半色調光罩的半 色調圖案對感光材料層的曝光區域進行曝光；其中，半色 調圖案的透光率介於40%至80°/。之間，且部分曝光區域的 曝光床度實質上專於感光材料層的厚度。顯影後暴露出局 邛的基材，且曝光圖案的最小線寬小於半色調圖案的最小201013322 2S145twf.doc/n. IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of fabricating a patterned material layer; in particular, to a half-tone mask A feature to improve the minimum line width of the patterned material layer. [Prior Art] With the advancement of technology, the manufacturing technology of the microelectronics industry is a thousand miles away. φ Among them, lithography plays a very important role. The lithography technique mainly uses a light source to transfer the designed pattern on the reticle to the photosensitive material by exposure, and can further utilize the patterned photographic material as an etching mask. However, in the lithography process, the line width of the pattern is related to the wavelength of the source used or the numerical aperture of the focused lens, so the minimum value of the line width is limited. In particular, as the degree of integration of electronic components continues to increase, the line width of the pattern inside the component is relatively reduced, which makes the difficulty of the lithography process relatively high. In the process of a liquid crystal display panel, the above lithography technique is often used to fabricate elements such as thin-film transistors (TFTs), halogen structures, leads, and the like. However, the fabrication of the above components is also limited by the limitations of conventional exposure processes, and it is not possible to obtain better component integration and component performance. Figure i shows a conventional thin film transistor. As shown in Fig. 1, limited by the size limit of the conventional exposure process (critical diinensi〇n, CD), the minimum limit of the channel width W of the thin film transistor is about 4 micrometers (μιη). Since the charging ability and energy loss of the thin film transistor are related to the channel width, the efficiency of the thin film transistor is limited. In terms of product & 々, %曰@_ ^, the component pattern with too large line width will also occupy = display the available area on the panel, resulting in the pixel [invention] dry "year Μ ί ί Γ Γζ ( 四 (4) green, can be in the material The layer is opened/formed into a pattern having a small line width. The layer (4) provides a method with a small line width _ 关 化 ❹ 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明And covering the photosensitive material layer on the substrate. The color is covered on the substrate 3. The color mask has a halftone pattern, and the light transmittance of the halftone pattern is between the secret and the secret. The halftone pattern of the photosensitive material layer is exposed to 4 light, and the portion of the light is exposed to the thickness of the photosensitive material layer. Then, the Μ 霄 霄 寺 寺 # # # 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图Exposure t-light pattern exposed The substrate, and the minimum line of the exposure pattern is smaller than the minimum line width of the halftone pattern. In the embodiment of the present invention, the above method further includes, after developing the photosensitive material layer, using the photosensitive material layer as a mask to leave a Substrate. In one embodiment of the present invention, the upper line is 十 TZ 兮ΓΤ 于 or equal to _. The minimum line width of the secret case is small. The minimum line width of the above halftone pattern in the embodiment The minimum line width of the exposure pattern for L ' is L, and L'/L is between 0.5. In the embodiment of the present invention, the thickness of the above-mentioned photosensitive material layer is between 6 201013322 ---------iy 28145twf.doc/n Ιμπι and 1.3pm. The invention provides a layer of patterned material, which is made of a substrate. First, the substrate is covered with a layer of photosensitive material, and Exposing an exposed area of the photosensitive material layer by a halftone pattern of the halftone mask; wherein the halftone pattern has a light transmittance of between 40% and 80°/, and the exposure bed of the partially exposed area is substantially Dedicated to the thickness of the photosensitive material layer. After development, the exposed substrate is exposed, and The minimum line width of the light pattern is less than the minimum halftone pattern
線寬。接著，在以感光材料層為罩幕來蝕該基材之後，形 成圖案化材騎；其巾，圖案化材料層的最小線寬小於 等於2μιη。 在本發明之-實施例中’上述半色調圖案的最小線寬 為L，而圖案化材料層的最小線寬為L，，，且l，，/l介於〇33 與0.5之間。 、· 本發明採用半色調光罩對材料層進行圖案化，以達 曝光圖案的最小線寬小於光罩上之半色觸案的最小線寬 的要求，進而在材料層上形成線寬較小的圖案。此製作 案化材料層的方法可以用於製作需要微小線寬的元件，二 可進一步提高元件的積集度與製程的餘裕度。 ' 為讓本發明之上述特徵和優點能更明顯易懂，下 舉實施例，並配合所附圖式，作詳細說明如下。 守 【實施方式】 ° ，仏·Γ吗朱化材料層方^ 實施例。首先’如圖2Α所示，提供基材u〇，並且於j 上iio覆蓋感光材料層120。依據應用場合的不同；‘ 7 201013322 J9 28145twf.doc/n 施例的基材110與感光材料層120可以有多種不同的型 態。舉例而言，基材110可以是承載基板、轉移基板、其 上已形成有其他元件或膜層的製程中間產物，或是與感光 材料層120同屬於多層結構中的上下兩膜層。此外，感光 材料層120可以是要對基材110進行圖案化所形成的光阻 罩幕，或是本身即為要形成在基材110上的膜層等。當然， 隨著感光材料層120的不同性質，形成感光材料層12〇的 ❹ 方法例如是塗佈(coating)、印刷(printing)、沉積(deposition) 等。 接著，如圖2B所示，提供半色調光罩13〇於基材n〇 上方。半色調光罩130具有半色調圖案132 ,且半色調圖 案132的透光率介於4〇〇/0與80%之間。更詳細而言，本實 施例的半色調光罩130上例如具有不透光區13〇a與半透光 區130b，其中半透光區13〇b例如覆蓋透光率介於4〇%至 80%之間的半色調薄膜，使得照射到此半透光區13肋的光 線不會100%通過。 .圖3為本發明所採用之半色調.光罩130與傳統二元光 罩(binary mask)的光強度分佈的比較圖，其中橫軸為對應 於光罩圖案的曝光區域的位置，縱轴為通過光罩後的光強 度。睛參照圖3 ’曲線表示習知二元光罩的光強度分 佈’而曲線320麵本發明之半色調光罩13㈣光強度分 佈由圖3可清楚得知，由於半色調光罩上—的光罩圖 ^為穿透率較低的半色調圖案132，因此通過此區域的光 線，其光強度會明顯低於通過傳統二元光罩之光線所具有 201013322 y 28145twf.doc/n 的光強度，而呈現如圖3所示的曲線3i〇與曲線320的差 異。換言之，雖然通過相同寬度的開口，伸庫用丰声 罩no所呈現的曝光深度與曝光量會低於傳 罩。 承上述，本實施例如圖2C所示，藉由半色調光罩13〇 的半色調圖案132對感光材料層120的曝光區域122進行 曝光，並且使部分曝光區域122的曝光深度實質上等於感 ⑩光材料層120的厚度’即確保曝光量足以在感光材料層12〇 上形成鏤空的曝光圖案。接著，如圖2d所示，顯影感光 材料層120 ’以形成曝光圖案124，且曝光圖案124暴露出 局部的基材110。 對照圖3所緣示的光強度分布曲線，本發明應用半色 調光罩130來進行圖案化製程。如圖3所示，若要在材料 層上形成曝光圖案的最小曝光強度為s，此時採用傳統二 元式光罩所進行的曝光製程可以得到最小線寬為c的曝光 圖案。然而，若採用本發明的半色調光罩13〇 ,由於曝光 & 量較低，因此在曝光量仍足以形成曝光圖案的前提下所 得到的曝光圖案將具有比c更小的最小線寬c，。以本實施 例所繪示的圖案化製程為例，所形成的曝光圖案124的最 小線寬L’會小於半色調圖案132的最小線寬L。在較佳的 情況下，本實施例所採用的感光材料層12〇的厚度介於 Ιμπι與1·3μιη之間’而所得到的曝光圖案124的最小線寬 L’小於或等於2μηι，且L，/L介於0.33與0·5之間。 依據本發明之一實施例，圖4進一步繪示半色調光罩 201013322, 28145twf.doc/n 的f色=圖案的穿透率與應用其進行圖案化製程所能得到 =小線寬的關係圖。在圖4中，橫軸為半色調圖案的穿 $率軸為所形成之曝光圖案的最小線寬―）。在本 貝施例中’感光材料層的厚度為固定值，例如，而 也為定值，例如22mj/cm2。此時，所形成的曝光圖 案的取小職會財色㈣穿料呈現正相關的關 係。例^ ’當半色_㈣穿透率為4()%時卿成的曝光 ❹ _的最小線寬會小於半色調随穿料為祕時所形成 的曝光圖案的最小線寬。 一立圖5係根據本發明繪示圖案化材料層之另一實施例的 示思圖。請參照圖5，圖案化材料層100之製作方法與上 述實知例之随化製程類似，惟本實施例是將感光材料層 120作為要對基材11〇進一步圖案化的光阻罩幕以形成 圖案化材料層1〇0。承接圖2D所繪示的步驟，在感光材料 層120上形成曝光圖案124之後，再以感光材料層12〇為 罩幕來蝕刻被曝光圖案124所暴露的基材11〇，而形成具 有圖案112的圖案化材料層100。圖案化材料層100的圖 案u2會與感光材料層][20的曝光圖案124相對應。此時， 所形成的圖案H2的最小線寬L，，理論上會接近曝光圖案 124的最小線寬L’。換言之，如同前述，在較佳的情況下， 圖案化材料層的圖索112的最小線寬L·，，會小於或等 於2μιη’且圖案化材料層1〇〇的圖案112的最小線寬L，， 與半色調光罩130上的半色調圖案132的最小線寬L的比 值’即L’’/L會介於0.33與0.5之間。 201013322. 28145twf.doc/n 本發明之製作圖案化材料層的方法係採用半色調光 罩來對材料層進行圖案化。由於半色調光罩且有可 光源穿透率與穿透光型的特性，因此曝光柯以輕易達= 曝光圖案的最小線寬小於鮮上之半色_㈣最小線寬 的要求，進而在材料層上形成線紐小的難，如 於提高元件的積集度與製程的餘裕度。 有助Line width. Then, after etching the substrate with the photosensitive material layer as a mask, a patterned material ride is formed; and the minimum line width of the patterned material layer is less than or equal to 2 μm. In the embodiment of the present invention, the minimum line width of the above halftone pattern is L, and the minimum line width of the patterned material layer is L,, and l, , /l is between 〇33 and 0.5. The present invention uses a halftone mask to pattern the material layer so that the minimum line width of the exposure pattern is less than the minimum line width of the half color touch on the mask, thereby forming a smaller line width on the material layer. picture of. The method of fabricating a material layer can be used to fabricate components requiring a small line width, and the complexity of the component and the margin of the process can be further improved. The above features and advantages of the present invention will be more apparent from the following description. [Embodiment] °, 仏·Γ? Zhuhua material layer ^ Example. First, as shown in Fig. 2A, a substrate u is provided, and the photosensitive material layer 120 is covered on i. Depending on the application; '7 201013322 J9 28145twf.doc/n The substrate 110 and the photosensitive material layer 120 of the embodiment can have many different types. For example, the substrate 110 may be a carrier substrate, a transfer substrate, a process intermediate product on which other elements or layers have been formed, or the upper and lower film layers in the multilayer structure as the photosensitive material layer 120. Further, the photosensitive material layer 120 may be a photoresist mask formed by patterning the substrate 110, or a film layer or the like which is to be formed on the substrate 110 itself. Of course, with the different properties of the photosensitive material layer 120, the method of forming the photosensitive material layer 12 is, for example, coating, printing, deposition, and the like. Next, as shown in FIG. 2B, a halftone mask 13 is provided over the substrate n?. The halftone mask 130 has a halftone pattern 132, and the halftone pattern 132 has a light transmittance of between 4 Å/0 and 80%. In more detail, the halftone mask 130 of the present embodiment has, for example, an opaque region 13〇a and a semi-transmissive region 130b, wherein the semi-transmissive region 13〇b covers, for example, a light transmittance of 4% to A halftone film between 80% causes light rays that are irradiated to the ribs of the semi-transmissive region 13 to not pass 100%. Figure 3 is a comparison diagram of the light intensity distribution of the halftone reticle 130 and the conventional binary mask used in the present invention, wherein the horizontal axis represents the position of the exposure region corresponding to the reticle pattern, and the vertical axis The light intensity after passing through the mask. Referring to Figure 3, the curve shows the light intensity distribution of a conventional binary mask, and the curve 320 is the halftone mask of the present invention. (4) The light intensity distribution is clearly seen from Fig. 3, due to the light on the halftone mask. The mask pattern ^ is a halftone pattern 132 having a low transmittance, so that the light intensity passing through this region is significantly lower than that of the light passing through the conventional binary mask with 201013322 y 28145 twf.doc/n. The difference between the curve 3i 〇 and the curve 320 as shown in FIG. 3 is presented. In other words, although the opening of the same width is used, the depth of exposure and the amount of exposure exhibited by the sound-absorbing mask no will be lower than that of the mask. In the above, as shown in FIG. 2C, the exposure region 122 of the photosensitive material layer 120 is exposed by the halftone pattern 132 of the halftone mask 13〇, and the exposure depth of the partial exposure region 122 is substantially equal to the sense 10 The thickness of the photo material layer 120 is such that the exposure amount is sufficient to form a hollow exposure pattern on the photosensitive material layer 12A. Next, as shown in Fig. 2d, the photosensitive material layer 120' is developed to form the exposure pattern 124, and the exposure pattern 124 exposes the partial substrate 110. In contrast to the light intensity distribution curve shown in Fig. 3, the present invention applies a halftone dimmer 130 for the patterning process. As shown in Fig. 3, if the minimum exposure intensity of the exposure pattern to be formed on the material layer is s, an exposure process using a conventional binary mask can be used to obtain an exposure pattern having a minimum line width of c. However, if the halftone mask 13 of the present invention is used, since the exposure &litude is low, the exposure pattern obtained under the premise that the exposure amount is still sufficient to form the exposure pattern will have a minimum line width c smaller than c. ,. Taking the patterning process illustrated in this embodiment as an example, the minimum line width L' of the formed exposure pattern 124 is smaller than the minimum line width L of the halftone pattern 132. In a preferred embodiment, the thickness of the photosensitive material layer 12〇 used in the embodiment is between Ιμπι and 1·3μηη', and the minimum line width L' of the exposed exposure pattern 124 is less than or equal to 2μηι, and L , /L is between 0.33 and 0·5. According to an embodiment of the present invention, FIG. 4 further illustrates the relationship between the transmittance of the f color=pattern of the halftone mask 201013322, 28145 twf.doc/n and the pattern width of the application. . In Fig. 4, the horizontal axis is the minimum line width of the formed exposure pattern - the minimum line width of the formed halftone pattern. In the present embodiment, the thickness of the photosensitive material layer is a fixed value, for example, but also a constant value, for example, 22 mj/cm2. At this time, the formed exposure pattern takes a positive correlation with the accounting color (4). For example, when the half-color _(iv) transmittance is 4 ()%, the minimum line width of the exposure ❹ _ will be smaller than the minimum line width of the exposure pattern formed when the halftone is secret. A vertical view 5 is a diagram showing another embodiment of a patterned material layer in accordance with the present invention. Referring to FIG. 5, the method for fabricating the patterned material layer 100 is similar to that of the above-described embodiment. However, in this embodiment, the photosensitive material layer 120 is used as a photoresist mask to further pattern the substrate 11A. A patterned material layer 1 〇 0 is formed. After the exposure pattern 124 is formed on the photosensitive material layer 120, the substrate 11 暴露 exposed by the exposed pattern 124 is etched by the photosensitive material layer 12 as a mask to form the pattern 112. Patterned material layer 100. The pattern u2 of the patterned material layer 100 corresponds to the exposure pattern 124 of the photosensitive material layer [20]. At this time, the minimum line width L of the formed pattern H2 is theoretically close to the minimum line width L' of the exposure pattern 124. In other words, as in the foregoing, in a preferred case, the minimum line width L· of the pattern 112 of the patterned material layer is less than or equal to 2 μm and the minimum line width L of the pattern 112 of the patterned material layer 1 L The ratio of the minimum line width L of the halftone pattern 132 on the halftone mask 130, ie, L''/L, may be between 0.33 and 0.5. 201013322. 28145 twf.doc/n The method of making a patterned material layer of the present invention uses a halftone mask to pattern the material layer. Due to the halftone mask and the characteristics of light source transmittance and light transmission type, the minimum line width of the exposure pattern is less than that of the fresh half color _ (four) minimum line width, and then in the material It is difficult to form a line on the layer, such as improving the accumulation of components and the margin of the process. Help
另一方面，本發明還可以將前述的製作圖案化材料層 的方法應用於液晶顯示面板的製帛，以進 t體度，高薄膜電晶體的充電效率並降低其能 日卜’降低各兀件本身或元件間的最小線寬也有 助於提南液晶顯7F面板上的元件積集度，改善晝素的開口 率。 雖然本發邮財關㈣如上，財 太=具有本發明所屬技術領域之通常知識者= 不脫離本發明之精神和範_，當可作On the other hand, the present invention can also apply the aforementioned method for fabricating a patterned material layer to a liquid crystal display panel, so as to increase the charging efficiency of the high-thin film transistor and reduce the energy of the thin film transistor. The minimum line width of the piece itself or between the components also contributes to the component accumulation on the Nanyang liquid crystal display 7F panel and improves the aperture ratio of the pixel. Although the present postal money (4) is as above, the company has the general knowledge of the technical field to which the present invention pertains = without departing from the spirit and scope of the present invention,
:者=本發明之保護範圍當視後附之申輸= 【圖式簡單說明】 圖1繪示習知的薄膜電晶體。 示製作圖案化材料層 圖2Α至圖2D係依據本發明緣 方法之實施例。 與傳統二元光罩的 的穿透率與應用其 圖3為本發明所採用之半色調光罩 光強度分佈的比較圖。 圖4繪示半色調光罩的半色調圖案 11 201013322 28145twf.doc/n 進行圖案化製程所能得到的最小線寬的關係圖。 圖5係根據本發明繪示圖案化材料層之另一實施例的 示意圖。 【主要元件符號說明】 100 :圖案化材料層 110 :基材 112 :圖案 120:感光材料層 ® 122 :曝光區域 124 :曝光圖案 130 :半色調光罩 130a :不透光區 130b :半透光區 132 :半色調圖案 L:半色調圖案最小線寬 L’ ：曝光圖案最小線寬 〇 L” ：圖案化材料層的最小線寬 w:通道寬度 12The scope of protection of the present invention is as follows: [Simplified Description of the Drawings] FIG. 1 illustrates a conventional thin film transistor. Illustrated Patterned Material Layer Figures 2A through 2D are embodiments in accordance with the method of the present invention. The transmittance and application of the conventional binary mask are shown in Fig. 3 as a comparison of the light intensity distribution of the halftone mask used in the present invention. 4 is a halftone pattern of a halftone mask. 11 201013322 28145twf.doc/n A diagram showing the minimum line width that can be obtained by a patterning process. Figure 5 is a schematic illustration of another embodiment of a patterned material layer in accordance with the present invention. [Main component symbol description] 100: Patterned material layer 110: Substrate 112: Pattern 120: Photosensitive material layer® 122: Exposure region 124: Exposure pattern 130: Halftone mask 130a: Opaque region 130b: Semi-transparent Area 132: Halftone pattern L: Halftone pattern Minimum line width L': Exposure pattern minimum line width 〇L": Minimum line width of patterned material layer w: Channel width 12