201013288 ' 六、發明說明： 【發明所屬之技術領域】 本發明涉及一電泳顯示裝置，尤其涉及一電泳顯示裝置和製造該電泳 顯示裝置的方法。 【先前技術】 直到最近，顯示裝置典型地包括液晶顯示（LCD)裝置，電衆顯示面 板（PDPs)和有機電激發光顯示器（OLEDs)。然而，為滿足消費者需求， 提出各種顯示裝置。 尤其地’顯示裝置需具備重量輕、外觀薄、效率高和全彩移動影像的 特性。為滿足這些特性’提出電泳顯示裝置。電泳顯示裝置利用帶電粒子 移動至陰極或陽極的現象。電泳顯示裝置在對比度、響應時間、全彩顯示、 成本和移動性等都具有優越性。與LCD裝置不同，電泳顯示裝置無需偏振 器、背光單元、液晶層等。因此，電泳顯示裝置在生產成本具有優越性。 ❹ 第1圖所示習知技術中驅動電泳顯示裝置的方法剖面示意圖。在第工 圖中，習知的電泳顯示裝置1包括一第一基板U、一第二基板36和一位於 第一基板11和第二基板36間的墨水層57。墨水層57包括複數個膠囊63， 在每個膠囊63中有複數個染白粒子59與複數個染黑粒子61。染白粒子％ 和染黑粒子61分別為透過縮合聚合反應帶有負電荷和正電荷。、 連接至薄膜電晶體（圖中未示）的複數個像素電極28設置於第一 11下且在每個像素區域内（圖中未示）。每個像素電極28具有正 ^麼。當縣形成林種尺寸時，執行磁程序贿得具有均自尺寸的膠 當正電黯貞電壓施加料柄57時，_ 63巾㈣自粒子％ :、粒子61根據所施加電壓的極性而移動。當染黑粒子61向上移 ^ 不為黑色。當染白粒子59向上移動時，顯示為白色。 ，、 第2圖為習知電泳顯示裝置的剖面示意圖。在 顯示裝置！包括-第-基板n、_第二基板36和—位 二基板36間的墨水層57。墨水層57讯 第土板11和第 鮮增57双置於第五黏合層51與第六黏合層 201013288 ' 53之間。第五黏合層51與第六黏合層53中的每一個均係由透明材料所形 成。共同電極55設置於第六黏合層53下，以面對墨水層57。墨水層57包 括複數個谬囊63，在每個謬囊63中有複數個染白粒子59與複數個染專粒 子61。染白粒子59與染黑粒子61分別帶有負電荷與正電荷。 ❹ 第二基板36可以透明塑膠或玻璃形成，而第一基板„可以不透明的 不銹鋼形成。第一基板11亦可以透明塑膠或玻璃形成。紅色（R)、綠色（g) 與藍色（B)次濾光器的彩色濾光層40形成於第二基板36的整個表面下。 間線（圖中未示）和資料線（圖中未示）形成於第一基板11上。閉線與 料線相交以定義-像素區域ρ» -薄膜電晶體（TFT)Tr形成於閑線與 線交叉部分。TFT Tr設置於每個像素區域p中。TFT及包括一閘極^、一 閘絕緣層16、一包括主動層i8a和歐姆接觸層18b的半導體層18、一源極 20以及-汲極22。閘極和源極分別連接至閘線和資料線，且閉絕 覆蓋開極14。半導體層㈣置於閘絕緣層16上並覆蓋閉極14。源極2〇 和汲極22設置於半導體層18上且相互分離。 包括汲接觸孔27的鈍化層26形成於TFT Tr上。汲接觸孔27露 極22的-部分。像素電極28透過汲接觸孔27連接至沒極22。像素 28可以透明導電材料形成，例如：銦錫氧化物(ιτ〇)或銦辞氧化物㈣。 ❹ 為光^有顯示裝置1 _如自然光或⑽鱗的周圍光做 二不置可根據施加於像素電極28的電壓的極性，引導膠 囊63中的染白粒子59和染黑粒子61的位置改變，以顯示影像性引導膠 1右騎示騎知的電泳顯林置的製程的剖面示意圖。 i旨非顯示區域域的區域係指顯示區域，而顯示區域週邊區域的區域 膜基 上。^交)形成於第一金屬薄膜基板11的整個表面 形成於絕緣層間線（圖中未示）和資料線（圖中未示） 然圖中未示，在非顯t區n和形 形成於像素區域p中。雖 场'中形成一連接至閘線的閘墊極和一連接至資料 5 201013288 ' 線的資料墊極。 純化層26藉由塗佈一有機絕緣材料而形成於TFTTr上。純化層％經 圖形化以形成-沒接觸孔27,露出在每轉素區域p巾TFTTr驗極（圖 中未不）、露出閘墊極的閘塾接觸孔（圖中未示）以及露出資料墊極的資料 塾接觸孔（圖中未示）β 透明導電材料層（圖中未示）藉由沈積透明導電材料而形成於鈍化層 26上。透明導電層經圖形化以形成透過沒接觸孔與tft&騎極接觸的像 素電極28、-透過閘墊接觸孔與閘塾極接觸的閘輔助墊極（圖中未示）以 及-透過資料麵軌與資難極麵的資棚極（圖巾未示> 形成 排列有例如TFTTr、像素電極28等元件的第一金屬薄膜基板u，與堆積的 ❹第一黏合層7、第一負載基板5、第二黏合層9和第二金屬薄膜基板13，可 稱為電泳顯示裝置的陣列基板22。 在第3B圖中’第三黏合層32與第四黏合層％分別形成於如玻璃基板 的第二負載基板30的前表面與後表面上。第—透明基板％與第二透明基 板38分別附於第三黏合層32的外表面和第四黏合層％的外表面。第一透 明基板36與第二透明基板38中的每一均為柔性的。 包括順序排列的紅色⑻次遽光器4〇a、綠色⑹次濾光器40 b與 藍色⑻次渡光器40c的彩色滅光層4〇形成於第一透明基板36上。每個 紅色（R)次滤光器40a、綠色⑹次遽光器4〇 b與藍色（B)次減光器 〇 伽對應於陣列基板22的像素區域P。形成有彩色遽光層40，與堆積的第 三黏合層32、第二負載基板3〇、第四黏合層34和第二透明基板货的第一 透明基板36，可稱為電泳顯示裝置的彩色濾綠板42。對應於次遽光器 40a、40b以及40c的邊界區域的黑矩陣（圖中未示），可進一步形成於彩色 濾、光基板42上。黑矩陣包圍每個像素區域p。 在第3C圖中’電泳膜65附於陣列基板22上。電泳膜65包括第五黏 合層51和第六黏合層53、-共同電極55和一墨水層57。墨水層57設置 於第五黏合層51和第六黏合層Μ之間，共同電極％設置於第六黏合層幻 以面向墨水層57墨水層57包括複數师囊63，在每娜囊&中有複數 個染白粒子59和複數個染黑粒子61。染白粒子％和染黑粒子61分別透過 縮合聚合反應帶有負電荷與正電荷。設置第五黏合層M以面對像素電極 201013288 · · 28 ’從而使墨水層57設置於共同電極55和像素電極28之間。 在第3D圖中’彩色濾光基板42附於陣列基板22以形成面板。設置彩 色濾光基板42以面對電泳膜65。 在第3E圖中’帶有第-黏合層7、第二黏合層9與第二金屬薄膜基板 13的第一負載基板5與第一金屬薄膜基板u脫離。同樣，帶有第三黏入層 32、第四黏合層34與第二透明基板38的第二負載基板3〇與第 36脫離。由此，可得到電泳顯示裝置i。 土 然而’上賴程;知的電賴示裝置的製程的缺點。製_常複雜。 也就是說’陣列基板需要將第-黏合層和第二黏合層附於第一負載基板的 前表面和後表面、將第-金屬薄膜基板和第二金屬薄膜基板附於第:黏合 層和第二黏合層以及形成如TFT或像素電極的陣列元件在附於第一黏合層 的第-金屬薄膜基板上的製程。進一步地，陣列基板需要將第三黏合層和 第四黏合層附於第二負載基板、將第一透明基板和第二透明基板附於第三 黏合層和第四黏合層以及形成彩色滤光層於第一透 外，將無用元件如第一負載基板和第二負載基板與面板脱離。 步地，當在電泳顯示裝置製程找要但是在電泳顯示裝置最终產 ^無需的無用元件例如第一負載基板和第二負載基板脫離時，有^外應 ^降由此’树列基板㈣色濾光基㈣存在對準差，㈣顯㈣像品質 开著和脫離的過程卜在由如瓣等相對低硬度材料所 ν 基板上造成刮傷。刮傷亦造成顯示影像品質的下降。 【發明内容】 ㈣本發明提供1泳顯示裝置及其製造方法，其完全地避免-個 s 於習知技術的限制和缺點所產生的問題。 方法，^包括的ίΐι本發明的一個特點，係提供—電泳顯示裝置的製造 線以及二具有半導體層有顯示區域的基板上形成—閘極、、一資料 有複數個像素區域、ί顯一，極和一没極的細電晶體，該顯示區域定義 部區域的切割部Ϊ ’間線^域週邊區域的非顯示區域以及在非顯示的外 3線與資料線相互交又以定義像素區域，薄膜電晶體 201013288 . 連接至閘線與^料線；形成__緣層於在 個表面上；形成-純化層於薄腹雷日脚L ., 深的基板的整 個像素區域巾，並連接至簿眩心電明體形成像素電極於鈍化層上的每 W4, 賴電晶體峽極；形成對準標記於切割部分中； 附加包括-黏合層、-具有帶電粒子的 一 電泳膜於像素電極上，墨水層設晋於赴人思u，、门電極和一基底膜的 去雷搞μ mu 4 I置於黏s層和基絲之間，黏合層位於像 子·利用用於將色的帶負電的次粒子和黑色的帶正電的次粒 子，_餅將1色紅層與騎區域騎 於基底膜上，彩色滤光層對應於顯评ύ办姊色/慮先層 對應晰卿㈣光層上並 ,lz. ^ ^ ., 卞早標°己的步驟與开>成閘線的步驟、形成資 ❿ 料線的步驟和形成像素電極的步驟的其中之一同步進行。 域貢 線^顯特顯不裝置包括—位於具有顯示區域的基板上的閘 =個像素區域’和—在顯示區域週邊區域的非顯 了=線的基板的整個表面的閉絕緣層;一位於閉線上=線 ❹ 2域的資料線；—薄膜電晶體，其包括一連接至閘線的閘 ^、二在義緣層上並對應於閘極的半導體層、—設置於半導體層上且連 ，至資料線的雜以及-與源極分離且設置於半導體層上的錄；一位於 閑絕緣層上的非顯示區域中並連接至資料線的—端的資料塾極；一包括一 汲接觸孔、-閘錢觸孔和—資難接觸孔的鈍化層，位於薄膜電晶體上， 該鈍化層在顯示區域具有第一厚度、在非顯示區域具有小於第一厚度的第 -厚度’紐接觸孔、關墊接觸孔以及該資難接觸孔分職出汲極、 =墊極和f料墊極，觀化層包括—具有有機絕緣材㈣和無機絕緣材料 層的雙層結構，在顯示區域中的有機絕緣材料層比在非顯示區域中的有機 絕緣材料層厚’ 一像素電極，位於每個像素11域的鈍化層上並透過汲接觸 孔與汲極接觸卜錄像素電極上並對應於顯雜_電频；一位於電 泳膜上的彩色濾光層；以及一位於彩色濾光層上的鈍化片。 另一特點，一電泳顯示裝置包括一位於具有顯示區域的基板上的閘 線’該顯示區域定義有複數個像素輯，和—在顯示區域週邊區域的非顯 :區域；-位於基板上非顯示區域中的閘墊極，其並連接至閘線的一端； 一位於包括有麟祕板的整録面的㈣緣層卜位於_上並與間線 201013288 相交以定義像《域的資料線；—薄臈電晶體，其包括_ 極、-在舰縣上並制湖極醉導體層、-設置料導 接至資料線的源極以及-與源極分離且設置於半導體層上的沒極· 間絕緣層上的賴郎域巾並連接至麟線的—_轉墊極 二 汲接觸孔、一雜接觸孔和一資料墊接觸孔的純化層，位㈣膜電曰=一 該純化層在顯示區域具有第-厚度、在非顯示區域具有小於#第—^产的第 、該·_咖_4觸齡聰‘極、 ❹ 料層三有機絕緣材料層和第二無機絕緣材料層的三層結構；電極， 位於每個像素區域親化層上並透财_孔與祕摘；―位於 極上並對應於顯示區域的電泳膜；—位於電泳膜上的彩色渡光層；以及一 位於彩色濾光層上的鈍化片。 可以理解’以上通常的描述和以下詳細的描述僅 供本發明的進-步魏日^ 曰狀提 【實施方式】 參照附圖，以詳細描述本發明。 在電冰顯示裝置中，臈類墨水層和彩色滤光層形成於形成有盯τ的陣 列基板上。 ❺ 帛4A圖至第圖為本發明第一實施例中電泳顯示裝置的像素區域的 $程的剖面示意圖；而第5A圖至第5H圖為本發明第一實施例中電泳顯示 置的閘塾區域的製程的剖面示意圖。第从圖至第όΗ圖為本發明第一實 施例中電泳顯示裝置的資料墊區域的製程的剖面示意圖；而第7Α圖至第 7C圖為本發明第—實施例中電泳顯示裝置的製程的平面示意圖。形成有像 素電極與TFy等的像素區域p包括—形成有TFT的開關區域TfA和一形成 有儲存電谷器的儲存區域StgA。像素區域p定義於顯示區域da。形成有 開墊極的閘墊區域GPA和形成有資料塾極的資料墊區域DpA定義於顯示區 域的週邊區域的非顯示區域中。 在第4A圖、第5A圖和第6A圖中，第一金屬材料沈積於如玻璃基板 或塑膠基板的絕緣基板1〇1上，以形成一第一金屬層（圖中未示）。第一金 9 201013288 f材料包括鋁(A1)、鋁合金(綱)、鋼(Cu)、鋼合金、鉻⑼和鈦㈤ °第—金屬材料層利用遮罩處理圖形化以形成-閘線（圈 未不）、一開關區域TrA中的閘極1〇3、儲存區域StgA中的第一儲存電 f 105和閑墊區域GPA㈣閘塾極1〇7。遮罩處理包括一形成光阻⑽） 的步驟使用遮罩曝光PR層的步驟、一顯影已曝光之PR層以形成PR 开V的步驟、-朗第—金屬材料層以形成所欲金屬圖形的步驟以及一剝 離PR圖形的步驟。間線沿一方向延伸，且閘極103連接至閘線。第一儲 =電^^可為閘線的一部分。當共同線（圖中未示）形成為平行於間線 迪’ 子電極1〇5可為共同線的一部分。極107連接至間線的一 ❹ 端。閘線、閘極103、第一儲存電極1〇5和閘塾極1〇7的每一個均可具有 層結構。雙層結射為一堆積的紐/齒層或一堆積的欽合金/銅層。在第仏 = ί 6Α ^，閑線、間極1〇3、第一儲存電極105和閘墊極 107具有單層結構。 參考第7Α圖’藉由第一金屬層的圖形化處理，對準標記⑼形成於可 透過切割過程去除的對準標記區域CA中。對準標記m用於將彩色遽光層 與準確對準。形成有閘墊極1〇7 (第5A圖)和資料墊(圖中未 不）的非顯不區域，位於設置有像素區域p的顯示區域da與對準標記 ί 間。對準標記191形成於與間塾區域GPA相鄰的第一切割區域 CA、，、資料塾區域DPA相鄰的第二切割區域CA以及面對第一區域的第三 ❹ 中。對準標記191位於切割線的外部區域。因為彩色遽光層包 括紅色、綠色以及藍色次彩色滤光器，對準標記區域Ca的第一區域至 區域的每-個包括至少-對準標記191。對準標記191可在另一過程中二 二!=、第Γ圖和第6B圖中，閘絕緣層110藉由沈積如氧化矽_) ==個表面上形成。接著’本質非晶傳質非== ㈣雜轉晶箱（时未示）鱗獅餘閘絕緣層 上。本質非曰曰石夕層和摻雜非晶碎層利用遮罩處理而進行圖形化處理，以 形成本質非晶妙的主動層115a和雜非_的摻雜非晶石夕圖形肠。 層115a和摻雜非晶石夕圖形U5b對應於閘極1〇3。 在第4C圖、第5C圖和第6C圖中’第：金屬材料沈積於主動層服、 201013288 $非晶石夕圖形ll5b(第4B圓）和閘絕緣層11〇，以形成一第二金屬層（圖 屬材料包軸（M。）、鋼（°°、鈦㈤合金雜合金 (AINd)的其中之—。第二金屬層可為雙層或三層結構。例如，第二金屬 層的雙層結構可為堆積的鈦合金/銅，而第二金屬層的三層結 ，細。在第4C圖、第5C圖和第6C圖所示為具有單層結構的第 1金 屬層。 第二金屬層（圖中未示）經圖形化以形成-資料線（圖中未示）、一開 關區域TrA中的源極120、一開關區域TrA中的没極122、_儲存區域辦 中的第=儲存_ 124和一在資料塾區域DpA中的資料塾極126。資料線 朗線交狀定義像素區域P。雜120和祕122設置於關區域TrA 〇 ❺摻雜非晶紗圖形H5b上’並相互分離。源極12〇連接至資料線，且第二 儲存電極124連接至沒極122。資料塾極126設置於閉絕緣層ιι〇上且^ 接至資料線的一端。 然後，位於源極120和汲極122之間的摻雜非晶矽圖形n5b的露出部 分，藉由乾式蝕刻過程而去除，從而主動層115a的一部分透過源極12〇和 汲極122的空隙露出，歐姆接觸層U5c形成於源極12〇和汲極122之下。 主動層115a和歐姆接觸層115c構成半導體層115。 另一方面，若對準標記191 (第7A圖）非於形成閘線和閘極1〇3的過 程中形成，對準標記191可在形成資料線、源極12〇和汲極122的過程中 φ 形成於閘絕緣層I10上。在此情況下，對準標記亦位於對準標記區域CA的 第一區域至第三區域。 雖然半導體層115、源極120和汲極122由相互不同的遮罩處理所形 成，他們也可透過單一遮罩處理而形成。更詳細地，本質非晶矽層、摻雜 非晶矽層以及第二金屬層依序地形成於閘絕緣層11〇上。然後，依序地形 成於閘絕緣層110上的本質非晶矽層、摻雜非晶矽層以及第二金屬層利用 以折射曝光方法或半調曝光方法的單一標記處理而進行圖形化處理，以形 成具有不同厚度的PR圖形。本質非晶矽層、摻雜非晶矽層以及第二金屬層 利用PR圖形做為敍刻遮罩以進行钱刻。在此情況下，在資料線和資料墊極 下形成有與半導體層相同材料的半導體圖形。進一步地，當在此過程中形 成對準標記時，在對準標記下亦有半導體圖形。 11 201013288 ❹201013288'. TECHNICAL FIELD The present invention relates to an electrophoretic display device, and more particularly to an electrophoretic display device and a method of manufacturing the same. [Prior Art] Until recently, display devices typically included liquid crystal display (LCD) devices, battery display panels (PDPs), and organic electroluminescent display devices (OLEDs). However, in order to meet consumer demand, various display devices have been proposed. In particular, the display device needs to have the characteristics of light weight, thin appearance, high efficiency, and full-color moving image. In order to satisfy these characteristics, an electrophoretic display device has been proposed. The electrophoretic display device utilizes the phenomenon that charged particles move to the cathode or the anode. Electrophoretic display devices are superior in contrast, response time, full color display, cost, and mobility. Unlike an LCD device, an electrophoretic display device does not require a polarizer, a backlight unit, a liquid crystal layer, or the like. Therefore, the electrophoretic display device is superior in production cost. BRIEF DESCRIPTION OF THE DRAWINGS A schematic cross-sectional view of a method of driving an electrophoretic display device in the prior art shown in FIG. In the drawings, a conventional electrophoretic display device 1 includes a first substrate U, a second substrate 36, and an ink layer 57 between the first substrate 11 and the second substrate 36. The ink layer 57 includes a plurality of capsules 63, and each of the capsules 63 has a plurality of white particles 59 and a plurality of black particles 61. The white dyed particles % and the blackened particles 61 have a negative charge and a positive charge, respectively, through the condensation polymerization. A plurality of pixel electrodes 28 connected to a thin film transistor (not shown) are disposed under the first 11 and in each pixel region (not shown). Each of the pixel electrodes 28 has a positive. When the county forms a forest species size, the magnetic procedure is performed to obtain a rubber with a uniform size when the positive electrode voltage application handle 57, _ 63 towel (four) from the particle %:, the particle 61 moves according to the polarity of the applied voltage . When the black particles 61 move up ^ are not black. When the white particle 59 moves upward, it is displayed in white. 2 is a schematic cross-sectional view of a conventional electrophoretic display device. On the display device! The ink layer 57 between the -first substrate n, the second substrate 36 and the second substrate 36 is included. The ink layer 57 and the first fresh layer 57 are placed between the fifth adhesive layer 51 and the sixth adhesive layer 201013288 '53. Each of the fifth adhesive layer 51 and the sixth adhesive layer 53 is formed of a transparent material. The common electrode 55 is disposed under the sixth adhesive layer 53 to face the ink layer 57. The ink layer 57 includes a plurality of capsules 63, and each of the capsules 63 has a plurality of white particles 59 and a plurality of dye particles 61. The white-dyed particles 59 and the black-dyed particles 61 have a negative charge and a positive charge, respectively. ❹ The second substrate 36 may be formed of transparent plastic or glass, and the first substrate „ may be formed of opaque stainless steel. The first substrate 11 may also be formed of transparent plastic or glass. Red (R), green (g) and blue (B) The color filter layer 40 of the secondary filter is formed under the entire surface of the second substrate 36. A line (not shown) and a data line (not shown) are formed on the first substrate 11. The closed line and the material The lines intersect to define a pixel region ρ» - a thin film transistor (TFT) Tr is formed at the intersection of the idle line and the line. The TFT Tr is disposed in each of the pixel regions p. The TFT includes a gate and a gate insulating layer 16 a semiconductor layer 18 including an active layer i8a and an ohmic contact layer 18b, a source 20 and a drain 22. The gate and the source are respectively connected to the gate line and the data line, and are closed to cover the open electrode 14. The semiconductor layer (4) being placed on the gate insulating layer 16 and covering the closed electrode 14. The source electrode 2 and the drain electrode 22 are disposed on the semiconductor layer 18 and separated from each other. A passivation layer 26 including a germanium contact hole 27 is formed on the TFT Tr. The portion of the dew pole 22 is connected to the pole electrode 22 through the crucible contact hole 27. The element 28 can be formed of a transparent conductive material, for example, indium tin oxide (ITO) or indium oxide (IV). ❹ For the light, there is a display device 1 _ such as natural light or (10) scale surrounding light can be applied according to the pixel The polarity of the voltage of the electrode 28 guides the position of the white-stained particles 59 and the black-stained particles 61 in the capsule 63 to change, so as to display a schematic cross-sectional view of the process of the electrophoretic display of the image-based guiding glue 1 to the right. The area of the non-display area refers to the display area, and the area of the area surrounding the area of the display area is formed on the entire surface of the first metal thin film substrate 11 formed on the interlayer of the insulating layer (not shown) and the data line. (not shown in the figure) Although not shown in the figure, in the non-display t region n and the shape is formed in the pixel region p. Although the field is formed in a gate pad connected to the gate line and a connection to the data 5 201013288 ' line The purification layer 26 is formed on the TFTTr by coating an organic insulating material. The purification layer % is patterned to form a non-contact hole 27, exposing the TFT Tr test pole in the per-transfer region (in the figure) No, no, the gate of the gate pad is exposed A hole (not shown) and a material for exposing the data pad, a contact hole (not shown), a layer of a transparent conductive material (not shown) is formed on the passivation layer 26 by depositing a transparent conductive material. The layer is patterned to form a pixel electrode 28 that is in contact with the tft & riding pole through the contact hole, a gate auxiliary pad (not shown) that is in contact with the gate through the gate contact hole, and a data track The capital of the straits is not shown in the figure (the towel is not shown), and the first metal thin film substrate u in which elements such as the TFTTr and the pixel electrode 28 are arranged, and the stacked first adhesive layer 7 and the first load substrate 5 are formed. The second adhesive layer 9 and the second metal thin film substrate 13 may be referred to as an array substrate 22 of an electrophoretic display device. In Fig. 3B, 'the third adhesive layer 32 and the fourth adhesive layer % are respectively formed on the front and rear surfaces of the second load substrate 30 such as a glass substrate. The first transparent substrate % and the second transparent substrate 38 are attached to the outer surface of the third adhesive layer 32 and the outer surface of the fourth adhesive layer, respectively. Each of the first transparent substrate 36 and the second transparent substrate 38 is flexible. A color extinguishing layer 4A including a red (8)th chopper 4A, a green (6) filter 40b, and a blue (8) secondary illuminator 40c, which are sequentially arranged, is formed on the first transparent substrate 36. Each of the red (R) secondary filter 40a, the green (6) secondary dimmer 4〇b, and the blue (B) secondary dimmer 〇 is corresponding to the pixel region P of the array substrate 22. Forming the color light-emitting layer 40, and the stacked third adhesive layer 32, the second load substrate 3, the fourth adhesive layer 34, and the first transparent substrate 36 of the second transparent substrate may be referred to as color of the electrophoretic display device. Filter the green board 42. A black matrix (not shown) corresponding to the boundary regions of the secondary illuminators 40a, 40b, and 40c can be further formed on the color filter and optical substrate 42. A black matrix surrounds each pixel region p. In the 3Cth view, the electrophoretic film 65 is attached to the array substrate 22. The electrophoretic film 65 includes a fifth adhesive layer 51 and a sixth adhesive layer 53, a common electrode 55, and an ink layer 57. The ink layer 57 is disposed between the fifth adhesive layer 51 and the sixth adhesive layer ,, and the common electrode is disposed on the sixth adhesive layer to face the ink layer 57. The ink layer 57 includes a plurality of capsules 63, in each nanocapsule & There are a plurality of white particles 59 and a plurality of black particles 61. The white dyed particles % and the blackened particles 61 have a negative charge and a positive charge, respectively, transmitted through the condensation polymerization. The fifth adhesive layer M is disposed to face the pixel electrode 201013288 · · 28 ' such that the ink layer 57 is disposed between the common electrode 55 and the pixel electrode 28. In the 3D drawing, the color filter substrate 42 is attached to the array substrate 22 to form a panel. The color filter substrate 42 is disposed to face the electrophoretic film 65. In Fig. 3E, the first load substrate 5 with the first adhesive layer 7, the second adhesive layer 9, and the second metal thin film substrate 13 is separated from the first metal thin film substrate u. Similarly, the second load substrate 3A with the third adhesive layer 32, the fourth adhesive layer 34, and the second transparent substrate 38 is separated from the 36th. Thereby, the electrophoretic display device i can be obtained. Earth However, it is a shortcoming of the process of the device. System _ often complicated. That is to say, the array substrate needs to attach the first adhesive layer and the second adhesive layer to the front and rear surfaces of the first load substrate, and the first metal thin film substrate and the second metal thin film substrate to the first: adhesive layer and the first The second adhesive layer and the process of forming an array element such as a TFT or a pixel electrode on the first metal thin film substrate attached to the first adhesive layer. Further, the array substrate needs to attach the third adhesive layer and the fourth adhesive layer to the second load substrate, the first transparent substrate and the second transparent substrate to the third adhesive layer and the fourth adhesive layer, and form a color filter layer. In the first pass, the unnecessary components such as the first load substrate and the second load substrate are detached from the panel. Step by step, when the electrophoretic display device process is found but the unnecessary components such as the first load substrate and the second load substrate which are not required for the final production of the electrophoretic display device are detached, there is a case where the tree substrate (four) color is lowered. The filter base (4) has poor alignment, and (4) the process of (4) image quality opening and detachment is caused by scratching on the substrate of a relatively low-hardness material such as a flap. Scratches also cause a drop in the quality of the displayed image. SUMMARY OF THE INVENTION (4) The present invention provides a one-stroke display device and a method of manufacturing the same, which completely avoids problems caused by limitations and disadvantages of the prior art. The method of the invention includes a feature that the manufacturing line of the electrophoretic display device and the substrate having the semiconductor layer having the display area form a gate, and the data has a plurality of pixel regions, a pole and a faint fine transistor, the non-display area of the peripheral portion of the cutting portion Ϊ 'intersection line area of the display area defining portion and the outer 3 lines and the data line of the non-display intersect with each other to define a pixel area, Thin film transistor 201013288. Connected to the gate line and the material line; form the __ edge layer on the surface; form a - purification layer on the thin-grained Leier foot L., the entire pixel area of the deep substrate, and is connected to The glare electrocardiograph forms a pixel electrode on the passivation layer every W4, and the oxide crystal isthmus; forming an alignment mark in the cut portion; additionally including an adhesive layer, an electrophoretic film having charged particles on the pixel electrode The ink layer is set to go to the person to think u, the gate electrode and a base film of the de-enhancement mu mu 4 I is placed between the sticky s layer and the base wire, and the adhesive layer is located in the image. Negative secondary particles and black positive bands The electric secondary particles, _ cake will ride the 1 color red layer and the riding area on the base film, the color filter layer corresponds to the evaluation ύ 姊 / 虑 虑 虑 虑 虑 虑 虑 虑 虑 虑 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The step of 卞 标 ° has been performed in synchronization with one of the steps of opening the gate line, the step of forming the seed line, and the step of forming the pixel electrode. The domain tributary line ^ display device includes - a gate located on the substrate having the display area = a pixel area 'and a closed insulating layer on the entire surface of the substrate of the non-displayed line of the peripheral area of the display area; a data line on the closed line = line ❹ 2 domain; a thin film transistor comprising a gate connected to the gate line, a semiconductor layer on the germany layer and corresponding to the gate, and disposed on the semiconductor layer , to the data line, and to the source separated from the source and disposed on the semiconductor layer; a non-display area on the dummy insulating layer and connected to the data end of the data line - one includes a contact hole a passivation layer of the gate contact hole and the contact hole, located on the thin film transistor, the passivation layer having a first thickness in the display region and a first-thickness contact hole having a thickness less than the first thickness in the non-display region The contact hole of the closing pad and the contact hole of the capital are divided into a bungee pole, a pad electrode and a f-pad electrode, and the viewing layer comprises a double-layer structure with an organic insulating material (four) and an inorganic insulating material layer in the display area. Organic insulating material layer a layer of organic insulating material in the display region is a pixel electrode located on the passivation layer of each pixel 11 field and is in contact with the drain electrode through the contact hole of the pixel and corresponding to the display frequency; a color filter layer on the film; and a passivation sheet on the color filter layer. Another feature is that an electrophoretic display device includes a gate line on a substrate having a display area, the display area defines a plurality of pixel sequences, and - a non-display area in a peripheral area of the display area; - a non-display on the substrate a pad electrode in the region, which is connected to one end of the gate line; a (four) edge layer located on the entire recording surface including the edge board is located at _ and intersects the line 201013288 to define a data line like the domain; - a thin germanium transistor, which comprises a _ pole, a immersed conductor layer in the ship county, a source connected to the data line, and a immersion separated from the source and disposed on the semiconductor layer · Lai Lang domain towel on the interlayer insulation layer and connected to the purification layer of the lining line - _ pole pad contact hole, a miscellaneous contact hole and a data pad contact hole, position (4) membrane 曰 = one purification layer The display area has a first thickness, the non-display area has a length less than #第—, the first, the third, the third organic insulating material layer, and the second inorganic insulating material layer. Three-layer structure; electrode, located on the layer of each pixel area and wealth _ hole and secret extract; - an electrophoretic film located on the pole and corresponding to the display area; - a color light-passing layer on the electrophoretic film; and a passivation sheet on the color filter layer. The above general description and the following detailed description are only for the purpose of the invention. In the electro-ice display device, a ruthenium-like ink layer and a color filter layer are formed on an array substrate on which a mark τ is formed. 4A to 5D are schematic cross-sectional views of a pixel region of the electrophoretic display device in the first embodiment of the present invention; and FIGS. 5A to 5H are diagrams showing the gate of the electrophoretic display in the first embodiment of the present invention; Schematic diagram of the process of the area. 1 to 7C are schematic cross-sectional views showing a process of a data pad region of an electrophoretic display device according to a first embodiment of the present invention; and FIGS. 7 to 7C are diagrams showing a process of an electrophoretic display device according to a first embodiment of the present invention; Schematic plan view. The pixel region p formed with the pixel electrode and TFy or the like includes a switching region TfA in which the TFT is formed and a storage region StgA in which the storage electrode is formed. The pixel area p is defined in the display area da. The pad region GPA in which the pad electrode is formed and the data pad region DpA in which the data pad is formed are defined in the non-display region of the peripheral region of the display region. In Figs. 4A, 5A and 6A, the first metal material is deposited on an insulating substrate 110 such as a glass substrate or a plastic substrate to form a first metal layer (not shown). The first gold 9 201013288 f material includes aluminum (A1), aluminum alloy (a), steel (Cu), steel alloy, chromium (9) and titanium (f) ° - metal material layer is patterned by masking to form a - brake line ( The ring is not the same, the gate 1〇3 in the switching area TrA, the first storage electric f 105 in the storage area StgA, and the pad area GPA (4) gate 〇1〇7. The masking process includes a step of forming a photoresist (10)), a step of exposing the PR layer using a mask, a step of developing the exposed PR layer to form a PR-opening V, and a layer of the Lang-metal material to form a desired metal pattern. The steps and a step of stripping the PR pattern. The line extends in one direction and the gate 103 is connected to the gate line. The first storage = electricity ^ ^ can be part of the brake line. When a common line (not shown) is formed parallel to the intermediate line, the sub-electrodes 1〇5 may be part of a common line. The pole 107 is connected to one end of the line. Each of the gate line, the gate 103, the first storage electrode 1〇5, and the gate electrode 1〇7 may have a layer structure. The double-layered junction is a stacked neo/tooth layer or a stacked alloy/copper layer. At 仏 = ί 6 Α ^, the idle line, the interpole 1, 3, the first storage electrode 105, and the pad electrode 107 have a single layer structure. Referring to Fig. 7', by the patterning process of the first metal layer, the alignment mark (9) is formed in the alignment mark area CA which can be removed by the dicing process. The alignment mark m is used to accurately align the color light-emitting layer. A non-display area in which the pad electrode 1〇7 (Fig. 5A) and the data pad (not shown) are formed is located between the display area da and the alignment mark ί in which the pixel area p is disposed. The alignment mark 191 is formed in the first cutting area CA adjacent to the interlayer area GPA, the second cutting area CA adjacent to the data area DPA, and the third side facing the first area. The alignment mark 191 is located at an outer area of the cutting line. Since the color light-emitting layer includes red, green, and blue sub-color filters, each of the first region to the region of the alignment mark region Ca includes at least an alignment mark 191. The alignment mark 191 may be formed in another process in the second! =, the second and sixth views, and the gate insulating layer 110 is formed by depositing a surface such as yttrium oxide. Then 'the essence of amorphous mass transfer non == (four) miscellaneous crystal box (not shown) on the lion seal insulation layer. The intrinsic non-ceremonial layer and the doped amorphous layer are patterned by masking to form an essentially amorphous active layer 115a and a hetero-amorphous amorphous austenitic intestine. The layer 115a and the doped amorphous slab U5b correspond to the gate 1〇3. In the 4Cth, 5Cth, and 6thth drawings, 'the metal material is deposited on the active layer, 201013288 $ amorphous lithography ll5b (4B circle) and the gate insulating layer 11〇 to form a second metal The layer (the material is included in the material axis (M.), the steel (°°, the titanium (five) alloy mixed alloy (AINd)). The second metal layer may be a two-layer or three-layer structure. For example, the second metal layer The two-layer structure may be a stacked titanium alloy/copper, and the three-layer junction of the second metal layer is fine. The first metal layer having a single-layer structure is shown in FIGS. 4C, 5C, and 6C. The two metal layers (not shown) are patterned to form a data line (not shown), a source 120 in a switching region TrA, a pole 122 in a switching region TrA, and a storage area. The first = storage _ 124 and a data 塾 126 in the data 塾 area DpA. The data line ridge line defines the pixel area P. The miscellaneous 120 and the secret 122 are set in the off region TrA 〇❺ doped amorphous yarn pattern H5b 'And separated from each other. The source 12 〇 is connected to the data line, and the second storage electrode 124 is connected to the immersion 122. The data 塾 126 is set to be closed The edge layer is connected to one end of the data line. Then, the exposed portion of the doped amorphous germanium pattern n5b between the source 120 and the drain 122 is removed by a dry etching process, whereby the active layer 115a A portion of the ohmic contact layer U5c is formed under the source 12A and the drain electrode 122. The active layer 115a and the ohmic contact layer 115c constitute the semiconductor layer 115. The alignment mark 191 (Fig. 7A) is formed not in the process of forming the gate line and the gate 1〇3, and the alignment mark 191 can be formed in the gate during the formation of the data line, the source 12 〇 and the drain 122. On the insulating layer I10. In this case, the alignment marks are also located in the first to third regions of the alignment mark area CA. Although the semiconductor layer 115, the source 120, and the drain 122 are formed by mutually different mask processing They can also be formed by a single mask process. In more detail, the intrinsic amorphous germanium layer, the doped amorphous germanium layer, and the second metal layer are sequentially formed on the gate insulating layer 11〇. Then, sequentially An intrinsic amorphous germanium layer formed on the gate insulating layer 110 The hetero-amorphous germanium layer and the second metal layer are patterned by a single labeling process by a refractive exposure method or a half-adjusting exposure method to form PR patterns having different thicknesses. Intrinsic amorphous germanium layer, doped amorphous germanium The layer and the second metal layer are patterned by using the PR pattern as a mask. In this case, a semiconductor pattern having the same material as the semiconductor layer is formed under the data line and the data pad. Further, when When an alignment mark is formed in the process, there is also a semiconductor pattern under the alignment mark. 11 201013288 ❹
在第4DW、第5D®和第6D圖中，純化層13〇藉由塗佈如如光丙烯 (photo-acryl)和«丁烯等有舰緣材料，在資料線、源極12〇、沒極122、 第二儲存電極124和資料塾極126上形成。鈍化層13〇有一平頂表面。純 化層13G _以折轉光絲或半娜光方法的遮罩處理而進行圖形化處 理’以形成沒接觸孔132、閘塾接觸孔134和資料墊接觸孔136，分別露出 汲極122、閘塾極1〇7和資料塾極126。此外，像素區域p中的純化層⑽ 具有第-厚度u ’而在包括有_區域⑽和資難區域DpA的非顯示 區域NA(第7A圖）中的純化層130具有小於第一厚度u的第二厚度t2。 鈍化層130可藉由包括_步_曝絲置白曝光的二遮罩處理而進 行圖形化處理。純化層130是以有機絕緣材料所形成，以最小化寄生電容， 並得到平頂表面。.，寄生電容可產生於第—齡電極1()5和像素電極 之間，以及在第二儲存電極124和像素電極之間。 如上所述，顯示區域DA的純化層130與非顯示區域NA的純化層13〇 具有不同的厚度。顯示區域DA的鈍化層13〇的第一厚度u大於非顯示區 域NA的鈍化層130的第二厚度〜（㈣）。另一方面閉輔助塾極和資 料輔助墊極將形成於純化層13G上，並分別透過閘墊接觸孔134和資料塾 接觸孔136與閘塾極107和資料墊極126接觸。為了每個關助塾極和資 料輔助塾極與外部驅動電路基板（圖中未示）的連接，執行捲帶自黏合 (TAB)處理。在此情況下，每個關雜極和資料輔助墊極透過包括有 導電球（圖t未示）的異方導電媒（ACF)與捲帶式封裝（Tcp)膜接觸。 每個間輔助墊極和龍漏墊極的深度越大，ACF巾的導電球的直徑越 大。不幸地’相鄰閘塾接觸孔的導電球或相鄰資料墊接觸孔的導電球可相 互接觸’從而在存在祕關題。#在包括有㈣區域GpA和資料塾 區域DPA的非顯示區域NA㈣鈍化層13〇的厚度較小時，acf中的導電 徑較小，從而能避免電性短路的問題。進—步的，藉由增加顯示區 域DA的鈍化層13〇的厚度，可最小化如像錢極和第二儲存電極以間 2感應的寄生電容。因此，在本發财，顯示區域DA的鈍化層⑽的第 厚度tl大於非顯示區域να的純化層130的第二厚度丨2 (ti>t2)。 ^鈍化層130具有如光丙烯（ph〇t〇_aciyI)或BCB等有機絕緣材料的 早層結構時，如上所述’遮罩處理中的曝光處理因其光敏特性，直接作用 12 201013288 於有機絕緣材料層上。然而，如第8A圖至第8C圖和第9a圖至第π 不’鈍化層130可具有雙層結構或三層結構。第8A圖至第8c圖分 實施例中電泳顯示裝置的像素區域、區域、資區域中鈍 中【域而第9C圖分別為本發明第三實施例 顯不裝置的像素區域、·區域、㈣塾區域中鈍化層的製程 面不意圖。 =8=圖至第8C圖中’當銳化層13〇為雙層結構時，一有機絕緣材料 層U〇a和無機絕緣材料層130b堆積。第9A圖至第9C圖中，當鈍化層13〇 為二層結構時，一第一無機絕緣材料層飾、一有機絕緣材料層隱和第 -無機絕緣材料層堆積。有舰緣材料層包括光丙烯（ph.acryi) 或BCB的其中之一，無機絕緣材料層包括氧化發或氣化石夕的其中之一。 ❹ 例如’在第9A圖到第9C圖中，鈍化層130有一無機絕緣材料的上層。 由於無機絕緣材料不具有綠雜，料纽㈣曝光及顯祕理不能直 接作用於無機絕緣材料。在此情況下，具有光敏特性的pR材料的pR層（圖 中未示）形成於無機絕緣材料層上，pR層藉由折射曝光處理或半調曝光處 理而曝光並顯影，以在顯示區域DA形成第一 PR圖形（圖中未示以及 在非顯示區域NA形成第二PR圖形（圖中未示）’第二视圖形的厚度小於 第一 PR圖形的厚度。然後’無機絕緣材料的第二無機絕緣材料層13〇c、 有機絕緣材料層130b和無機絕緣材料的第一無機絕緣材料層13〇a藉由使 用第一和第二PR圖形做為圖形遮罩而進行圖形化處理，以露出閘塾極川7 和資料墊極126。接下來，非顯示區域NA的第二PR圖形藉由灰化處理去 除’從而露出第二PR圖形下的第二無機絕緣材料層13〇c的一部分。第二 無機絕緣材料層13〇c的露出的部分經蝕刻，從而在非顯示區域NA的鈍化 層130具有第一無機絕緣材料層13〇a和有機絕緣材料層13〇b的雙層結構。 也就是’完全去除非顯示區域1^八的第二無機絕緣材料層130c，而有機絕 緣材料層130b具有經減小的厚度。 鈍化層130具有上述之雙層結構或上述之三層結構，係提高形成於鈍 化層130上之像素電極與鈍化層130之間的黏合力’並提高TFTTr的特性。 由於有機絕緣層與導電材料之間的黏合力小於有機絕緣材料與無機絕緣材 料之間的黏合力以及無機絕緣材料與導電材料之間的黏合力，而使導電材 13 201013288 料的像素電極無化層13G之_齡力藉由將無舰賴料層設置於有 機絕緣材料層與導電材料層之間而提高。進一步地，當部分露於源極12〇 和汲極m之間的主動層购接觸有機絕緣材料層時，具有差的介面特 性’從而降低TFT ΊΥ的特性。因此，為防止TFT &的特性的降低，與主 動層115a具有優良介面雜的域縣材料層费置於触層13〇 ^底 層。 _ ❿ 在第4E圖 '第5E圖、第6E囷中’如銦錫氧化物(IT〇)或銦鋅氧化物 (ΙΖΟ)的透明導電材料沈積於純化層13〇上，以形成透明導電材料層（圖令 未不）。在沈積透明導電材料之前，如Μ〇作為第三金屬材料的不透明金屬 沈積麟化層13G ^在此情況下，雙層結構的導電材料形成於純 匕層30上。當用於對準衫色濾光層的對準標記不是在閘線形成步驟和資 料線形成步驟中所形成時，對準標記藉由圖形化第三金屬材料層而形成。 如果不形成不翻金肺科的第三金紐料層崎準標記是由透明導電材 料所形成’制翻導電材料的對準標記謂準彩色濾光層是非常困難的。 另-方面’像素電極可包括不透·屬材料 對準標記與騎電蹄料_，且絲素電靖_成糊—層；1 由兄於中對 準標雜於鈍化層上，有舰使㈣準歡解彩色遽光層。 e Μ ρΐΐί善Ϊ層或三層結構的導電材料層經圖形化’以形成每個像素區 :I像素4G、閘塾區域gpa中的關助塾極142和資料塾區域 =中的資料輔助墊極144。像素電極14G、閘輔助塾極142和資料輔助塾 132、難接觸孔134和資料塾接觸孔136與没極 122、閘墊極107和資料墊極126接觸。 IZZtl, 料的第二金屬材料’形成於對準標記區域CA中的純化層130上。 成圖i第1GC圖分顺本發日卜實施财電泳顯示裝置中用於形 位置的剖面示意圖。第lGA圖所示為於閉線形 “ 形成的對準標記的位置，第1GB圖所示為於資料線形成_中 所形成的解標記的位置，而第 二㈣料成步驟中 成的對準標記的位置。帛loc圖所不為於像素電極形成步驟情形 201013288 在第10A圖中，當解標記m是於職碱步驟中所形成時，對準 標記191位於基板101 ±且以閘絕緣層11〇覆蓋。在第1〇B圖中當對準 標3己m是於資料線形成步驟中所形成時，對準標記⑼位於閘絕緣層ιι〇 上且以鈍化層13G覆蓋。在第1GC圖中，當對準標記191是於像素電極形 成步驟中所形成時，對準標記191位於鈍化層130上。第10A圖至第loc 2所示為單層的鮮標記m。細，相線、f料線、和像素電極14〇為 雙層或二層結構時，對準標記191亦具有雙層或三層結構。 在第4F圖、第5F圖、第6F圖和第7B圖中，電泳膜167附於像素電 極140上。電泳膜167對應於顯示區域DA。電泳膜167包括一如聚對苯二 ?酸乙二_ (PET)之透明且紐材料的基底膜15G、-基底膜15〇下的 〇共同電極⑸、-共同電極153 T的墨水層163和一墨水層163獨黏合層 165。當電泳膜！67附於像素電極14〇時，墨水層163位於共同電極153與 像素電極140之間’而黏合層165面對像素電極14〇。共同電極153由透明 導電材料所形成。墨水層163包括複數個膠囊16〇，在每個膠囊16〇中有複 數個染白粒子156與複數鑛黑粒子158。染峰子156和染絲子158可 分別藉由縮合聚合反應帶有負電荷與正電荷。 電泳臈167可具有與上述不同的結構。例如，墨水層163可只有染白 粒子156和染黑粒子158的其令之一。雖然圓中未示當墨水層163对 粒子156和染黑粒子158❾其令之一時，共同電極可與像素電極形成 〇 ;同一層於鈍化層130上。也就是說’不同於第四f圖所示的結構，共同 電極1幻不形成於墨水層163的整個表面。在此情況下像素電極且有複 ^個條形，而共㈣極亦具有複數個條形。共_極的條與像素電極的條 父錯佈置。平行於麟的共同線形成闕線形成步驟巾，且露出共同線一 部分的共同接觸孔形成於鈍化層13〇和間絕緣層m中4 同接觸孔與共同線接觸。 、 ^ 電泳膜167的整體厚度_ 3〇〇微米至5〇〇微米。當形成有對準標記 的層間的步驟不同時，電泳膜167的頂層大於5〇〇微求 以對準將要形成於電泳膜167上的彩色遽光層有些許困難。- 第4G圖、第5(}圖、第6G圖和第7C圖中，紅色遽光層（圖中未示） 藉由塗佈紅色光阻，形成於顯示區域DA _電泳膜167的基底層15〇上。 15 201013288 例如，紅色光阻藉由旋轉塗佈法塗佈。將紅色濾光層與對準標記i9i準確 對準後’紅色濾光層由具有透光的透光_和阻光的阻光區的遮罩處理而 曝光和顯影，以形成紅色（R)次彩色濾光器17〇ae紅色（R)次彩色濾 光器17Ga對應於-些像素區域P。由於紅色光阻為負型，光照射的^色淚 光層的部分仍留在基底層15G上’光無照射的紅色縣層的部分經去除， 接下來，綠色⑹次彩色濾光器170b和藍色（B)次彩色渡光器i7〇c 藉由與紅色（R)次彩色遽光器170a形成過程相同的過程， 15〇上。紅色（R)、綠色⑹與藍色⑻次彩色濾光器隱、㈣與 170c依序地重複。紅色⑻、綠色⑹與藍色⑻次彩色遽光器施、 170b與170c設置於每個像素區域p中。In the 4DW, 5D®, and 6D drawings, the purification layer 13 is coated with materials such as photo-acryl and «butene, and the data line and source are 12 〇. The pole 122, the second storage electrode 124 and the data drain 126 are formed. The passivation layer 13 has a flat top surface. The purification layer 13G_ is patterned by a mask process of a folding filament or a semi-nano method to form a contactless hole 132, a gate contact hole 134, and a material pad contact hole 136, respectively exposing the drain 122 and the gate Bungee 1〇7 and data bungee 126. Further, the purification layer (10) in the pixel region p has a first thickness u' and the purification layer 130 in the non-display region NA (FIG. 7A) including the _ region (10) and the refractory region DpA has a smaller thickness than the first thickness u The second thickness t2. The passivation layer 130 can be patterned by a two mask process including _step_exposure exposure. The purification layer 130 is formed of an organic insulating material to minimize parasitic capacitance and to obtain a flat top surface. The parasitic capacitance can be generated between the first-age electrode 1() 5 and the pixel electrode, and between the second storage electrode 124 and the pixel electrode. As described above, the purification layer 130 of the display area DA has a different thickness from the purification layer 13A of the non-display area NA. The first thickness u of the passivation layer 13A of the display area DA is larger than the second thickness of the passivation layer 130 of the non-display area NA ((4)). On the other hand, the closed auxiliary drain and the material auxiliary pad will be formed on the purification layer 13G, and are in contact with the gate electrode 107 and the data pad electrode 126 through the gate contact hole 134 and the data contact hole 136, respectively. A tape self-adhesion (TAB) process is performed for each connection of the auxiliary bungee and the data-assisted drain to an external drive circuit substrate (not shown). In this case, each of the shut-off and data-assisted pads is in contact with the tape-and-reel package (Tcp) film through an anisotropic conductive medium (ACF) including a conductive ball (not shown). The greater the depth of each of the auxiliary pad and the tortoise pad, the larger the diameter of the conductive ball of the ACF towel. Unfortunately, the conductive balls of the adjacent gate contact holes or the conductive balls of the adjacent data pad contact holes may be in contact with each other', so that there is a secret problem. #In the case where the thickness of the passivation layer 13A of the non-display area NA (4) including the (4)-region GpA and the data 区域 region DPA is small, the conductive path in the acf is small, so that the problem of electrical short-circuit can be avoided. Further, by increasing the thickness of the passivation layer 13A of the display area DA, the parasitic capacitance induced between the image pole and the second storage electrode can be minimized. Therefore, in the present invention, the first thickness t1 of the passivation layer (10) of the display region DA is larger than the second thickness 丨2 (ti>t2) of the purification layer 130 of the non-display region να. When the passivation layer 130 has an early layer structure of an organic insulating material such as propylene (ph〇t〇_aciyI) or BCB, as described above, the exposure treatment in the mask treatment directly acts 12 201013288 due to its photosensitive property. On the layer of insulating material. However, the passivation layer 130 as in Figs. 8A to 8C and 9a to π'th may have a two-layer structure or a three-layer structure. 8A to 8c are the blunt pixels in the pixel region, the region, and the region of the electrophoretic display device in the embodiment, and the ninth panel is the pixel region, the region, and the (4) of the display device of the third embodiment of the present invention. The process surface of the passivation layer in the germanium region is not intended. = 8 = Fig. 8C Fig. When the sharpening layer 13 is a two-layer structure, an organic insulating material layer U〇a and an inorganic insulating material layer 130b are stacked. In Figs. 9A to 9C, when the passivation layer 13 is a two-layer structure, a first inorganic insulating material layer, an organic insulating material layer, and a first-inorganic insulating material layer are stacked. The ship edge material layer includes one of propylene (ph.acryi) or BCB, and the inorganic insulating material layer includes one of oxidized hair or gasified stone. ❹ For example, in the FIGS. 9A to 9C, the passivation layer 130 has an upper layer of an inorganic insulating material. Since the inorganic insulating material does not have green impurities, the exposure and the secret of the material (4) cannot directly act on the inorganic insulating material. In this case, a pR layer (not shown) of a pR material having photosensitive characteristics is formed on the inorganic insulating material layer, and the pR layer is exposed and developed by a refractive exposure treatment or a half-tone exposure treatment to be in the display area DA. Forming a first PR pattern (not shown in the drawing and forming a second PR pattern (not shown) in the non-display area NA' the thickness of the second view shape is smaller than the thickness of the first PR pattern. Then 'the second of the inorganic insulating material The inorganic insulating material layer 13〇c, the organic insulating material layer 130b, and the first inorganic insulating material layer 13〇a of the inorganic insulating material are patterned by using the first and second PR patterns as a pattern mask to expose The gate electrode 7 and the data pad electrode 126. Next, the second PR pattern of the non-display area NA is removed by ashing treatment to expose a portion of the second inorganic insulating material layer 13〇c under the second PR pattern. The exposed portion of the second inorganic insulating material layer 13A is etched, so that the passivation layer 130 in the non-display region NA has a two-layer structure of the first inorganic insulating material layer 13a and the organic insulating material layer 13b. Is ' The second inorganic insulating material layer 130c of the non-display area is completely removed, and the organic insulating material layer 130b has a reduced thickness. The passivation layer 130 has the above-described two-layer structure or the above-described three-layer structure, which is improved in formation The adhesion between the pixel electrode on the passivation layer 130 and the passivation layer 130 improves the characteristics of the TFTTr. Since the adhesion between the organic insulating layer and the conductive material is less than the adhesion between the organic insulating material and the inorganic insulating material, and inorganic The bonding force between the insulating material and the conductive material causes the age of the pixel electrode layer 13G of the conductive material 13 201013288 to be disposed between the organic insulating material layer and the conductive material layer by placing the shipless layer Further, when the active layer partially exposed between the source 12 〇 and the drain m is in contact with the organic insulating material layer, it has poor interface characteristics' thereby reducing the characteristics of the TFT 。. Therefore, in order to prevent TFT & The reduction of the characteristics, the domain layer material with the excellent interface impurity of the active layer 115a is placed on the bottom layer of the contact layer. _ ❿ In the 4E figure '5E, 6E囷' such as indium tin oxide A transparent conductive material of (IT〇) or indium zinc oxide (ΙΖΟ) is deposited on the purification layer 13〇 to form a transparent conductive material layer (not shown). Before depositing the transparent conductive material, such as Μ〇 as the first An opaque metal deposition layer of a trimetallic material 13G ^ In this case, a double-layered conductive material is formed on the pure tantalum layer 30. When the alignment mark for aligning the color filter layer is not formed in the gate line When the step and the data line forming step are formed, the alignment mark is formed by patterning the third metal material layer. If the third metal material layer is not formed, the layer is marked by a transparent conductive material. It is very difficult to form an alignment mark of a turn-over conductive material called a quasi-color filter layer. Another aspect of the 'pixel electrode can include a opaque material alignment mark and riding electric shoe material _, and the silk fibroin _ _ paste layer; 1 by the middle of the alignment mark on the passivation layer, there is a ship Let (4) quench the color twilight layer. e Μ ρ ΐΐ Ϊ Ϊ Ϊ 或 或 或 或 或 或 或 或 或 或 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电Extremely 144. The pixel electrode 14G, the gate auxiliary drain 142 and the data auxiliary buffer 132, the hard-to-contact hole 134, and the data contact hole 136 are in contact with the gate 122, the pad electrode 107, and the data pad 126. The IZZtl, the second metal material of the material is formed on the purification layer 130 in the alignment mark area CA. The first GC chart of Fig. i is divided into the schematic diagram of the shape for the shape of the electrophoresis display device. The lGA diagram shows the position of the alignment mark formed in the closed line shape, the 1GB diagram shows the position of the de-marking formed in the data line formation_, and the alignment of the second (four) material formation step. The position of the mark. The 帛loc map is not for the pixel electrode formation step. 201013288 In Fig. 10A, when the unmark m is formed in the step of the alkali base, the alignment mark 191 is located on the substrate 101 and the gate insulating layer 11〇 coverage. When the alignment mark 3 is formed in the data line forming step in the first layer B, the alignment mark (9) is on the gate insulating layer and covered with the passivation layer 13G. In the first GC In the figure, when the alignment mark 191 is formed in the pixel electrode forming step, the alignment mark 191 is located on the passivation layer 130. The 10A to loc 2 shows a single layer of the fresh mark m. Fine, phase line When the f-line and the pixel electrode 14 are double-layered or two-layered, the alignment mark 191 also has a two-layer or three-layer structure. In the 4F, 5F, 6F, and 7B, The electrophoretic film 167 is attached to the pixel electrode 140. The electrophoretic film 167 corresponds to the display area DA. The electrophoretic film 167 includes a base film 15G of a transparent material of benzoic acid bis(PET), a 〇 common electrode (5) under the base film 15 , an ink layer 163 of the common electrode 153 T, and an ink layer 163 of a single adhesive layer 165. When the electrophoretic film !67 is attached to the pixel electrode 14A, the ink layer 163 is located between the common electrode 153 and the pixel electrode 140' and the adhesive layer 165 faces the pixel electrode 14A. The common electrode 153 is formed of a transparent conductive material. The ink layer 163 includes a plurality of capsules 16A, and each of the capsules 16 has a plurality of white particles 156 and a plurality of mineral black particles 158. The dye peaks 156 and the dyes 158 can be negatively charged by condensation polymerization, respectively. The electrophoretic crucible 167 may have a structure different from the above. For example, the ink layer 163 may have only one of the white particles 156 and the black particles 158. Although the ink layer 163 does not show the particles 156 and When the black particles 158 are one of the orders, the common electrode may form a 与 with the pixel electrode; the same layer is on the passivation layer 130. That is, 'the structure of the common electrode 1 is not formed in the ink layer except for the structure shown in the fourth f-picture. The entire surface of 163. In this case The pixel electrode has a plurality of strip shapes, and the common (four) poles also have a plurality of strip shapes. The strips of the common_pole are arranged incorrectly with the strips of the pixel electrodes. The common line parallel to the lining forms a twist line forming step towel, and is exposed. A common contact hole of a part of the common line is formed in the passivation layer 13 and the interlayer insulating layer 4, and the contact hole is in contact with the common line. 、 The total thickness of the electrophoretic film 167 is 〇〇 3 μm to 5 μm. When the steps of aligning the layers of the marks are different, it is somewhat difficult for the top layer of the electrophoretic film 167 to be larger than 5 Å to align the color light-emitting layer to be formed on the electrophoretic film 167. - In the 4G, 5th, 6G, and 7C, a red phosphor layer (not shown) is formed on the base layer of the display region DA_electrophoretic film 167 by applying a red photoresist. 15〇13. 15201013288 For example, the red photoresist is coated by spin coating. After the red filter layer is accurately aligned with the alignment mark i9i, the red filter layer is made of light transmissive _ and opaque The masking process of the light blocking region is exposed and developed to form a red (R) color filter 17 〇 ae red (R) color filter 17Ga corresponds to some pixel regions P. Since the red photoresist is The negative type, the portion of the light-irradiated color tear layer remains on the base layer 15G. The portion of the red, non-irradiated red county layer is removed. Next, the green (6) color filters 170b and blue (B) The secondary color illuminator i7〇c is formed by the same process as the red (R) color chopper 170a, 15 。. Red (R), green (6) and blue (8) color filters are hidden, (4) Repeated sequentially with 170c. Red (8), green (6), and blue (8) color dimmers, 170b and 170c are disposed in each pixel region p.
彩色遽光層170可包括-帶有紅色⑻、綠色⑹與藍色⑻妙 色渡光器170a、與隱的白色（W)次彩色遽光器。白色（w)次彩 色濾光器藉由塗佈和圖形化無色光阻而形成。在此情況下，每個紅色（r)〔 綠色⑹、藍&⑻和白色（W)次彩色渡光器設置於矩陣形狀的四個像 素區域中。次彩色縣ϋ可由喷墨裝置所形成。藉㈣墨裝置，次彩色遽 ，器可形成於每個像素區域Ρ而不經用於形成每個次彩色縣器的圖靴 處理。 在形成彩色渡光基板Π0前，黑矩陣（圖中未示）可形成於每個像素 區域Ρ的邊界區域。黑矩_應於和詩線。黑樹脂層_於基底膜 150上’或以黑色為基礎的金屬材料層沈積於基底膜15〇上。以黑色為基礎 的金屬材料層可由絡（Cr)形成。黑樹脂層或以黑色為基礎的金屬材料層經 圖形化以形成黑矩陣。 在第4H ®、第5H圖與第6H圖中，具有透明和柔性特性的塑膠材料 ^鈍化片180位於彩色滤光層17〇上。封裝圖形（圖中未示）沿顯示區域 DA的週邊的非顯示區域ΝΑ而形成。鈍制18〇附於基板ι〇ι，從而純化 片⑽覆蓋顯示區域DA。純化片18〇露出閘輔助塾極142和 塾極 144。 接下來雖然圖中未不’沿切割線切割基板1〇1，以去除形成有對準標 記191的部分CA。此部分為非顯示區域NA的外部區域。一 acf (圖中未 不）附於閘獅塾極142和資料輔助墊極144，且ACF與Tcp (圖中未示） 16 201013288 ，性連接i外部驅動電路基板（圖中未示）。藉由上述調製處理，得到本發 明的電泳顯示裝置。 第11八圖至第lie圖為本發明—實施例_的製程的剖面示意圖。 在第11Α圖中’TFTTr、用於對準彩色濾光層的對準標記191、在顯示 2 DA和非顯不區域NA +具有不同厚度的純化層⑽、每娜素區域p 的像素電極形成於基板10!上。由於每個元件的製造細節已經解釋過， ^以省略解釋。在第11A圖中’對準標記191係於形成閘線（圖中未示） 和TFTTr的閘極（圖中未示）的步驟中所形成。 在第11B圖中’包括黏合層165、墨水層163、共同電極153和基底膜 5〇_的電泳膜167附於形成像素電極140的基板ιοί上。電泳膜16?對應於 =不區域DA。在第11B圖中’墨水層163包括複數個膠囊16{)，在每個膠 160中有複數個染白粒子156與複數個染黑粒子158。染白粒子156和染 黑粒子158分別藉由縮合聚合反應帶有負電荷與正電荷。然而，墨水層163 I只有染白粒子156和染黑粒子158的其中之-。在此情況下，電泳膜167 中的共同電極153省略’而共同電極形成於基板1〇1上。共同電極可與像 素電極形成層於鈍化層13G h像钱極具有複數個條形，共同電 極亦具有複數個條形。共同電極的條與像素電極的條交錯設置。 在第11C圖中’彩色濾光層170包括依次重複的紅色（R)、綠色⑹ 與藍色（B)次彩色濾光器，其使用對準標記191形成於電泳臈⑹上。彩 〇 ⑸慮光層170可包括具有紅色⑻、綠色⑹、藍色⑻次彩色滤光器 的白色（W)次彩色濾光器。每個紅色（R)、綠色⑹、藍色⑻和白 色（W)次彩色濾光器設置於矩陣形狀的四個像素區域中。 接下來，鈍化片180形成於彩色濾光層170上，而形成有對準標記191 的基板ιοί的一部分藉由沿切割線切割而去除。—ACF (圖中未^)°附於 間輔助塾極142和資料輔助塾極144，且ACF與TCP (圖中未示）電性連 接至外部驅動電路基板（圖中未示）。藉由上述調製處理，得到本 泳顯示裝置100。 在上述電泳顯示裝置的製程中，無需習知的電泳顯示裝置的製程中必 要的負載基板。此外，無需用於附著負載基板的黏合層。因此，降低製造 成本。 _ 17 201013288 ，步地，纟於料縣層直接地形成於電賴上，無需 ，本個_輔_由於祕濾柄直it 電泳臈上’其對準差範圍（約2微米）小 1接位於 習知=顯示裝置中的對準差範圍（約5微米）二此有利於對準=板的 Ϊ ’由於無需不必要元件的脫離過程，可避免如觸之問題。 雷W 2，由於純化層顧示區域和_示區域具有不_厚度，可避免 電性短路的問題，且可最小化寄生電容。 又T避免 第12Α®至第12C圖為用於分別解釋本發明一實施例中The color phosphor layer 170 may include - a red (8), a green (6) and a blue (8) color illuminator 170a, and a hidden white (W) color chopper. A white (w) color filter is formed by coating and patterning a colorless photoresist. In this case, each of the red (r) [green (6), blue & (8) and white (W) secondary color apexes is disposed in the four pixel regions of the matrix shape. The secondary color county can be formed by an inkjet device. By means of the (four) ink device, a sub-color device can be formed in each pixel region without the shoe processing for forming each sub-color county device. Before forming the color light-emitting substrate Π0, a black matrix (not shown) may be formed in a boundary region of each pixel region Ρ. The black moment _ should be in the line of poetry. A black resin layer _ on the base film 150 or a black-based metal material layer is deposited on the base film 15 。. The black-based metal material layer may be formed of a network (Cr). A black resin layer or a black based metal material layer is patterned to form a black matrix. In the 4HH, 5H, and 6H drawings, a plastic material having a transparent and flexible property ^ passivation sheet 180 is located on the color filter layer 17A. A package pattern (not shown) is formed along the non-display area 周边 of the periphery of the display area DA. The blunt 18 inch is attached to the substrate ι〇, so that the purification sheet (10) covers the display area DA. The purification sheet 18 exposes the gate auxiliary drain 142 and the drain 144. Next, although the substrate 1〇1 is not cut along the cutting line, the portion CA in which the alignment mark 191 is formed is removed. This part is the outer area of the non-display area NA. An acf (not shown) is attached to the brake lion bungee 142 and the data auxiliary pad 144, and the ACF and Tcp (not shown) 16 201013288 are connected to the external drive circuit substrate (not shown). The electrophoretic display device of the present invention is obtained by the above-described modulation processing. 11th to lieth are schematic cross-sectional views showing a process of the invention - the embodiment _. In the 11th drawing, 'TFTTr, the alignment mark 191 for aligning the color filter layer, the purification layer (10) having different thicknesses in the display 2 DA and the non-display area NA + , and the pixel electrode formation per the p-region p On the substrate 10! Since the manufacturing details of each component have been explained, the explanation is omitted. In Fig. 11A, the alignment mark 191 is formed in a step of forming a gate line (not shown) and a gate of the TFT Tr (not shown). The electrophoretic film 167 including the adhesive layer 165, the ink layer 163, the common electrode 153, and the base film 5? in the Fig. 11B is attached to the substrate ιοί forming the pixel electrode 140. The electrophoretic film 16? corresponds to = no region DA. In Fig. 11B, the 'ink layer 163 includes a plurality of capsules 16{), and each of the glues 160 has a plurality of white-dyed particles 156 and a plurality of black-stained particles 158. The white-dyed particles 156 and the black-dyed particles 158 have a negative charge and a positive charge, respectively, by condensation polymerization. However, the ink layer 163 I has only one of the white particles 156 and the black particles 158. In this case, the common electrode 153 in the electrophoretic film 167 is omitted and the common electrode is formed on the substrate 1〇1. The common electrode may form a plurality of strips with the pixel electrode forming layer on the passivation layer 13G h, and the common electrode also has a plurality of strip shapes. The strips of the common electrode are interleaved with the strips of the pixel electrodes. In Fig. 11C, the color filter layer 170 includes red (R), green (6) and blue (B) color filters which are sequentially repeated, which are formed on the electrophoresis cartridge (6) using alignment marks 191. Color 〇 (5) The light-improving layer 170 may include a white (W) color filter having red (8), green (6), and blue (8) color filters. Each of the red (R), green (6), blue (8), and white (W) color filters is disposed in four pixel areas of the matrix shape. Next, the passivation sheet 180 is formed on the color filter layer 170, and a portion of the substrate ιοί on which the alignment mark 191 is formed is removed by cutting along the dicing line. —ACF (not shown)° is attached to the auxiliary auxiliary drain 142 and the data auxiliary drain 144, and the ACF and TCP (not shown) are electrically connected to the external drive circuit substrate (not shown). The present swimming display device 100 is obtained by the above-described modulation processing. In the above process of the electrophoretic display device, a necessary load substrate in the process of the conventional electrophoretic display device is not required. In addition, an adhesive layer for attaching the load substrate is not required. Therefore, the manufacturing cost is reduced. _ 17 201013288 , step by step, the material layer is formed directly on the electric raft, no need, this _ auxiliary _ due to the secret filter handle straight it electrophoresis ' 'the alignment difference range (about 2 microns) small 1 The range of misalignment (about 5 micrometers) located in the conventional = display device is advantageous for aligning the Ϊ of the plate. Since the detachment process of unnecessary components is not required, problems such as touch can be avoided. Ray W 2, since the purification layer region and the region have a thickness, the problem of electrical short circuit can be avoided, and the parasitic capacitance can be minimized. Further, T avoids the 12th to the 12thth views for explaining the respective embodiments of the present invention.
域、資料墊’純化層的製程的剖面示意圖:由於 僅覆蓋TFT的鈍化層的不同，解釋注重於純化層的製程。 至第第i2c圖’純化層130有一雙層結構。雖然第8A圖 第8C圖顯不具有雙層結構的鈍化層13〇，在堆積次序上具有不同 (第8A圖）中的纯化層130 (第8A圖）具有一有機絕緣材料的第 =^30a和堆積於在第8A圖至第8C圖令第一層l3〇a (第8a圖）的盈機 •邑緣材料的第二層腿，而當鈍化層13〇位於像素_ 和資料墊區域贈具有-無機絕緣材料的第一層⑽ 2 材料的第二層-堆積於第一層上。例如，第一層13。== =〇2)或氮化石夕（SlNx)形成’第二層13〇e可由苯環丁埽毋㈣或光丙 蝉（photo-acryl)所形成。 在第8Affi至第8C圖中的電泳顯示裝置中，在閘塾區域GpA和資料塾 區域DPA中’由無機絕緣材料所形成的純化層13〇的第二層i3〇b經去除， 從而在·賴GPA和龍魏域DPA巾賴傾m具有錢絕緣材料 的第-層130a的單層結構。因此’在閘塾區域GpA和資料墊區域DpA中 的鈍化層13G稱度小於雜素區域中麟化層13()的厚度。細，在第 12A圖至第12<3_電泳顯示裝置中，鈍化層13G不僅在像素區域卩中並 在閘墊區域GPA和資料墊區域DPA巾具有雙層結構。在此情況下，在間塾 區域GPA和資機輯DpA t，由機絕騎觸形細触層13〇的第 二層130e的厚度小於其於像素區域p t的厚度。另—方面，在開塾區域 GPA和資料塾區域DPA㈣鈍化層13G的第二層13加可完整地去除，從 而在閘墊區域GPA和資料塾區域DPA中賴化層13〇具有無機絕緣材料的 18 201013288 卓層結構。 备鈍化層130具有以無機絕緣材料做為下層的第一層13〇d和以有機絕 緣材料做為上層的第二層·的雙層結構時，沒有pR層用於圖形化純化 層130。純化層13〇藉由曝光和顯影第二層13〇e而直接圖形化，而無视 層。這是因為有機絕緣材料的第二層13〇e為光敏的。 ·'、 也就是說’折射曝光處理或半調曝光處理使用掃描型曝光單元（圖中 未不）作用於具有第-層刪與第二層13〇e的雙層結構的鈍化層13〇上， =括空自曝光的二曝光處理步賴曝光單元（时未示）作用於包 括第-層130d與第二層130e的雙層結構的鈍化層⑽上。然後，純化層 ϋ 二層13Ge經娜，從而在包括像素區域巾的鈍化層 β 層13加具有第—厚度U’而在_墊區域GPA和資料墊區域 DPA的非顯示區域中的鈍化層130的第二層i30e具有小於第一厚度u的 第-厚度t2。此外’覆蓋像素區域p令的每個没極⑵、閉塾區域⑽ 的閘塾極107和資料塾區域DPA中的資料塾極126的第一層圓 =藉由去除第二層脑聽出。紐，第—層圓的露出部分經: 從而汲接觸孔m、閉墊接觸孔134和資料墊接觸孔136透過第 分別露出汲極122、極1G7和資料墊極126。在此情況下，鈍化〇 不僅在像素區域P中並在閘墊區域GpA和資料 130d與第二層！30e的雙層結構。 f具有第層 ® 方面’當非顯示區域令的鈍化層130為單層結構時，在折射曝光 ^或半調曝光處理後具有不同厚度的第工層挪上需要單次的乾式侧 ^就是說’在像素區域Ρ中具有第一厚度tl且在閘墊區域⑽和資料 在中具有第二厚Μ的第二層⑽經乾式_，從而完全去除 料Γ域DPA的第二層130e，以及減小在像素區域p 中第-層130e的厚度。因此’鈍化層⑽在像素區域p +具有雙 而鈍化層130在閘塾區域GPA和資料墊區域DpA中具有單層結、。 由於下述過程與參照第8A圖至第8C圖的 省略下述過程的轉。 期，而 對本領域的技術人員而言，對本發明所做的各種修改和變化沒有背離 201013288 和變化，都在其_請專利範 關本發明之任何―精^所作有 【圖式簡單說明】 的實施的—部分，其有助於進—步理解本發明，說明本發明 $並配〇本發明之說明用於解釋本發明的原理。 如圖所示： ❹ 。知技術中驅動電泳顯示裝置的方法剖面示意圖，· 第2圖為習知的電賴示裝置的剖面示意圖； Ϊ = 3E圖為習知的電泳顯示裝置的製程的剖面示意圖； 製程的剖面示意圖4H圖為本發明第—實施例中電泳顯示裝置的像素區域的 製程第圖犯圖為本發明第一實施例令電泳顯示裝置的閘塾區域的 的製剖圖面t第意Γ圖為本發明第一實施例中電泳顯示裝置的資料塾區域 -主=7Α圖至第7C圖為本發明第一實施例中電泳顯示裝置的製程的平面 不，办圖， 垃至t:8c圖分別為本發明第二實施例中電泳顯示裝置的像素區 域、閘塾區域、資料塾區域令鈍化層的製程的剖面示意圖； 祕至第9C圖分別為本發明第三實施例中電泳顯示裝置的像素區 域、閘塾區域、資料塾區域中純化層的製程的剖面示意圖； 第1GA圖至第1GC圖分別為本發明一實施例令電泳顯示裝置#用於形 成彩色濾光層的對準標記的位置的剖面示意圖； 第11A圖至第11C圖為本發明—實施例中的製程的剖面示意圖；以及 第12A圖至第12C圖為用於分別解釋本發日月一實施例中電泳顯示裝置 的像素區域、閘塾區域、資料墊區域愤化層的製程的剖面示意圖。 201013288 【主要元件符號說明】 1 電泳顯示裝置 5 第一負載基板 7 9 11 13 第一黏合層 第二黏合層 第一基板/第一金屬薄膜基板 第二金屬薄膜基板 14 閘極 16 18 〇 18a 閘絕緣層 半導體層 主動層 18b 歐姆接觸層 20 22 26 源極 汲極/陣列基板 純化層 27 28 30 32 34 Ο W 36 38 40 40a 40b 40c 42 51 53 汲接觸孔 像素電極 第二負載基板 第三黏合層 第四黏合層 第二基板/第一透明基板 第二透明基板 彩色遽光層 紅色次滤光器 綠色次濾光器 藍色次濾光器 彩色濾光基板 第五黏合層 第六黏合層 55 共同電極 21 201013288 57 墨水層 59 染白粒子 61 染黑粒子 63 膠囊 65 電泳膜 101 絕緣基板 103 閘極 105 第一儲存電極 107 閘墊極 110 閘絕緣層 115 半導體層 115a 主動層 115b摻雜非晶矽圖形 115c 歐姆接觸層 120 源極 122 汲極 124 第二儲存電極 126 資料墊極 130 鈍化層 130a有機絕緣材料層(第8A圖至第8C圖） 130a第一無機絕緣材料層（第9A圖至第9C圖) 130b無機絕緣材料層(第8A圖至第8C圖） l3〇b有機絕緣材料層(第9A圖至第9C圖） 130c第二無機絕緣材料層 130d第一層 130e第二層 132汲接觸孔 134閘墊接觸孔 136資料墊接觸孔 140像素電極 22 201013288 閘輔助墊極 資料輔助墊極 基底膜 共同電極 染白粒子 染黑粒子 膠囊 墨水層 黏合層 電泳膜 彩色濾光層 紅色次彩色遽光器 綠色次彩色遽光器 藍色次彩色濾光器 鈍化片 對準標記 23Cross-sectional schematic of the process of the domain, data pad' purification layer: The explanation focuses on the process of purifying the layer due to the difference in the passivation layer covering only the TFT. The purification layer 130 has a two-layer structure to the i2c. Although the 8C figure 8C shows a passivation layer 13 of a double-layer structure, the purification layer 130 (Fig. 8A) having a different packing order (Fig. 8A) has an organic insulating material = ^30a And the second leg of the sturdy and sturdy material deposited in the first layer l3〇a (Fig. 8a) of Figs. 8A to 8C, and when the passivation layer 13 is located in the pixel _ and the data pad area A second layer of the first layer (10) 2 material having an inorganic insulating material is deposited on the first layer. For example, the first layer 13. == = 〇 2) or nitrite (SlNx) formation The second layer 13 〇e may be formed of benzocyclobutane (tetra) or photo-acryl. In the electrophoretic display device of Figs. 8Affi to 8C, the second layer i3〇b of the purification layer 13〇 formed of the inorganic insulating material is removed in the gate region GpA and the data buffer region DPA, thereby The Lai GPA and the Longwei domain DPA towel have a single layer structure of the first layer 130a of the money insulating material. Therefore, the passivation layer 13G in the gate region GpA and the data pad region DpA is less than the thickness of the lithiated layer 13() in the impurity region. Further, in the 12A to 12th electrophoretic display devices, the passivation layer 13G has a two-layer structure not only in the pixel region but also in the pad region GPA and the pad region DPA. In this case, in the inter-regional area GPA and the asset set DpA t, the thickness of the second layer 130e by the machine-riding contact fine-grain layer 13A is smaller than the thickness of the pixel area pt. On the other hand, the second layer 13 of the passivation layer GPA and the data 塾 region DPA (four) passivation layer 13G can be completely removed, so that the dialysis layer 13 〇 has an inorganic insulating material in the pad region GPA and the data 塾 region DPA. 18 201013288 The layer structure. When the passivation layer 130 has a two-layer structure in which the first layer 13 〇d of the inorganic insulating material is used as the lower layer and the second layer of the organic insulating material as the upper layer, no pR layer is used for patterning the purification layer 130. The purification layer 13 is directly patterned by exposing and developing the second layer 13 〇e without ignoring the layer. This is because the second layer 13〇e of the organic insulating material is photosensitive. ', that is, 'refractive exposure treatment or half-tone exposure treatment using a scanning type exposure unit (not shown) on the passivation layer 13 of the two-layer structure having the first layer and the second layer 13〇e The two exposure processing steps of the exposure from the exposure step (not shown) act on the passivation layer (10) of the two-layer structure including the first layer 130d and the second layer 130e. Then, the second layer 13Ge is subjected to purification, so that the passivation layer 130 having the first thickness U' and the non-display region in the _ pad region GPA and the data pad region DPA is applied to the passivation layer β layer 13 including the pixel region. The second layer i30e has a first thickness t2 that is less than the first thickness u. Further, the first layer circle of each of the pixelless region (2) covering the pixel region p, the gate electrode 107 of the closed region (10), and the data electrode 126 in the data region DPA is heard by removing the second layer brain. The exposed portion of the first layer circle is such that the contact hole m, the close contact hole 134 and the data pad contact hole 136 are respectively exposed to expose the drain 122, the pole 1G7 and the data pad 126, respectively. In this case, the passivation 〇 is not only in the pixel region P but also in the pad region GpA and the material 130d and the second layer! 30e double layer structure. f has a first layer® aspect. When the passivation layer 130 of the non-display area is a single layer structure, the first layer of the layer having a different thickness after the refraction exposure or halftone exposure processing requires a single dry side. 'The second layer (10) having the first thickness t1 in the pixel region 且 and having the second thick Μ in the pad region (10) and the material in the dry _, thereby completely removing the second layer 130e of the material DPA, and subtracting The thickness of the first layer 130e in the pixel region p is small. Therefore, the passivation layer (10) has a double in the pixel region p+ and the passivation layer 130 has a single-layer junction in the gate region GPA and the material pad region DpA. Since the following process and the reference to Figs. 8A to 8C are omitted, the following process is omitted. And those skilled in the art, the various modifications and changes made to the present invention do not depart from 201013288 and the changes, and all of them are in the form of a "simplified description" of the invention. The description of the present invention is intended to be illustrative of the principles of the invention. As shown: ❹ . FIG. 2 is a schematic cross-sectional view showing a conventional electrophoretic display device; FIG. 2 is a schematic cross-sectional view showing a process of a conventional electrophoretic display device; The figure is a process of the pixel area of the electrophoretic display device in the first embodiment of the present invention. The first embodiment of the present invention is a cross-sectional view of the gate region of the electrophoretic display device. The data 塾 area of the electrophoretic display device in the first embodiment - the main = 7 至 to 7C is the plane of the process of the electrophoretic display device in the first embodiment of the present invention, the picture is drawn, and the t: 8c picture is respectively A cross-sectional view of a process for making a passivation layer in a pixel region, a gate region, and a data region of an electrophoretic display device according to a second embodiment of the present invention; FIG. 9C is a pixel region of an electrophoretic display device according to a third embodiment of the present invention, A schematic cross-sectional view of a process for purifying a layer in a gate region and a data region; the first GA map to the first GC diagram are respectively a pair of electrophoretic display devices used to form a color filter layer according to an embodiment of the present invention A schematic cross-sectional view of the position of the mark; FIGS. 11A to 11C are schematic cross-sectional views showing a process in the embodiment of the present invention; and FIGS. 12A to 12C are diagrams for explaining the electrophoretic display in the embodiment of the present invention, respectively. A schematic cross-sectional view of the process of the pixel region, the gate region, and the data pad region of the device. 201013288 [Main component symbol description] 1 Electrophoretic display device 5 First load substrate 7 9 11 13 First adhesive layer Second adhesive layer First substrate / First metal film substrate Second metal film substrate 14 Gate 16 18 〇 18a Gate Insulating layer semiconductor layer active layer 18b ohmic contact layer 20 22 26 source drain/array substrate purification layer 27 28 30 32 34 Ο W 36 38 40 40a 40b 40c 42 51 53 汲 contact hole pixel electrode second load substrate third bond Layer 4th adhesion layer second substrate/first transparent substrate second transparent substrate color light layer red sub-filter green sub-filter blue sub-filter color filter substrate fifth adhesive layer sixth adhesive layer 55 Common electrode 21 201013288 57 Ink layer 59 White particle 61 Black particle 63 Capsule 65 Electrophoretic film 101 Insulating substrate 103 Gate 105 First storage electrode 107 Gate pad 110 Gate insulating layer 115 Semiconductor layer 115a Active layer 115b doped amorphous矽 pattern 115c ohmic contact layer 120 source 122 drain 124 second storage electrode 126 data pad 130 passivation layer 130a organic insulating material layer (Fig. 8A to Fig. 8C) 130a First inorganic insulating material layer (Fig. 9A to Fig. 9C) 130b inorganic insulating material layer (Fig. 8A to Fig. 8C) l3〇b organic insulating material layer (Fig. 9A) To 9C) 130c second inorganic insulating material layer 130d first layer 130e second layer 132汲 contact hole 134 pad contact hole 136 data pad contact hole 140 pixel electrode 22 201013288 gate auxiliary pad electrode auxiliary pad base film common Electrode dyed white particles black particle capsule ink layer adhesive layer electrophoresis film color filter layer red sub-color chopper green sub-color chopper blue sub-color filter passivation sheet alignment mark 23