201000818 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種發光二極體，特別涉及一種具均勻光 場之發光二極體，以及一種採用該發光二極體之背光模組。 【先前技術】 目前，發光二極體（Light Emitting Diode，LED)因具光 質佳（亦即LED光源射出之光譜）及發光效率高等特性而逐 漸取代冷陰極螢光燈（Cold Cathode Fluorescent Lamp, f CCFL)成為顯示裝置中之背光元件，具體可參閱Michael S. Shur 等人於文獻 Proceedings of the IEEE，Vol. 93，No. 20 (2005 年 20 月）中發表之“Solid-State Lighting: Toward Superior Illumination”一文。 惟，先前之發光二極體通常具有近似圓對稱之光場， 這些光場之中心光強度較強，由中心向四周擴散之區域光 強度越來越弱，惟此類型之光場於應用中並不總係可達到 實際需要。例如，如圖1所示，一種先前之背光模組10， 其包含一發光二極體11及一導光板12,該發光二極體11 所發出之光經由該導光板12光學引導後，被轉換成一面光 源並由該導光板12之出光面120出射，惟，由於發光二極 體11所產生之光場不均勻，由該出光面120所發出之面光 源之光均勻度難以達到理想要求。 有鑒於此，有必要提供一種具均勻光場之發光二極體 及採用該發光二極體之一種背光模組。 【發明内容】 5 201000818 • 以下將以實施例說明一種具均勻光場之發光二極體， 以及採用該發光二極體之一種背光模組。 一種發光二極體，其包括一發光二極體晶片，以及一 封裝該發光二極體晶片之封裝體，該封裝體包括一環繞該 發光二極體晶片之反射面及一與該反射面相連接之出光 面，該出光面對應於該發光二極體晶片具有一由該出光面 向該封裝體内凹陷形成之光轉換區，以增強發光二極體晶 片發出之光於該光轉換區上發生全反射之機率，進而使該 發光二極體獲得一均勻光場。 ^ 、* 一種背光模組，其包括一導光板，該導光板包括一入 光面，以及與該入光面相連接之一出光面；一發光二極體， 其相對該導光板之入光面設置，該發光二極體包括一發光 一極體晶片，以及一封裝該發光二極體晶片之封裝體，該 封裝體包括一環繞該發光二極體晶片之反射面及一與該^ 射面相連接之出光面，該出光面對應於該發光二極體晶片 ί具有一由該出光面向該封裝體内凹陷形成之光轉換區，該 X光—極體發出之光線由該導光板之入光面入射至導光板 中，進而由該導光板對其作光學引導後從該導光板之出光 面出射。 ▲相對於先前技術，由於發光二極體之出光面具有一由 =出光面向該封裝體内凹陷形成之光轉換區，該光轉換區 可增強發光二極體晶片發出之光於該光轉換區上發生全反 機率，進而使該發光二極體獲得一均勻光場，由此， X發光一極體作為背光模組之發光源使用時，該背光模 6 201000818 • 組可獲得較佳之出光均勻度。 • 【實施方式】 下面結合圖式對本發明作進一步之詳細說明。 請一起參閱圖2及圖3,本發明第一實施例提供之一種 發光二極體20,其包括一發光二極體晶片21及一封裝體 23 ’該封裝體23將該發光二極體晶片21封裝於其内。 該封裝體23為透明材料，如塑膠或玻璃所製成，當採 用塑膠來製成該封裝體23時，該塑膠可選用 PMMA(P〇lymethylmethacrylate，聚甲基丙烯酸曱酯）、 PC(Poly Carbonate,聚碳酸脂）、或係矽樹脂（silic〇ne)等作 為材質。該封裝體23對稱分佈，其具有一條中心線L，該 發光二極體晶片21之幾何中心位於該中心線l上。如圖3 所示’該封錢23包括一反射面23〇，⑽一與該反射面 230相連接之出光面232。 請一起參閱圖4,該出光面232具有一光轉換區23私 該光轉換區234位於該出光面232之幾何中心區域上，且 該光轉換區234為-弧形面。該出光面况為一擴圓面， 即該出光面232於垂直於該中心線L之平面上之投影且有 :第一^形外輪廊M。另，該反射面細為一環繞該發 光，晶片21之環狀表面，且該環狀表面呈倒圓錐形， :該環狀表面鄰近發光二極體晶片21 一側上之開口 退離發光二極體晶片21 —側上之開口。 、、 反射面23G 塗佈法、蒸鑛法錢鍍法形成— 反射膜’㈣發光二極體晶片21發出之光之韓射範圍進行 7 201000818 . 局限’從而使發光二極體20之光場近似為一橢圓形光場。 .如圖4所示’該光轉換區234設置為一橢圓面，即該 光轉換區234於垂直於該中心線L之平面上之投影具有一 第二橢圓形外輪廊N。上述第一、第二橢圓形外輪廊~M、n 同心’且第一橢圓形外輪廊Μ之長軸A與第二橢圓形外輪 廊N之短軸b重合，該第二圓形外輪廊N之長軸a與第一 橢圓形外輪廊Μ之短軸B重合。該光轉換區234可增強發 光二極體晶片21所發出之光於該光轉換區234與空氣之介 面處發生全反射之機率，該發光二極體晶片21發出之光於 該光轉換區234發生全反射後，其進而由該反射面23〇上 之反射膜將其反射至出光面232，並從該出光面232出射至 外界。故，該光轉換區234可降低該發光二極體2〇所形成 之搞圓形光場t中心光強纟，使得該橢圓幵》光場之光強度 分佈均勻，以獲得一均勻光場。 曰可理解，該光轉換區234之位置可對應於發光二極谓 曰曰片21之位置進行相應調整，其並不一定需要位於該出> 面232之4何中心區域上，例如，當該發光二極體晶片2 沿某個方向偏離該中心線L_S距離時，該光轉換區23 可相應地/σ 4方向偏離中心、線L —定距離，以保證發光： 極體20獲得一均勻光場。 請一起參閱圖7,本發明第二實施例提供之一種背光彩 組50其&用上述發光二極體2()作為發光源，該背光模海 50包括該發光二極體20，以及—導光板 該導光板55整體上大致為楔狀，其具有一入光苗 8 201000818 550’ -與該入光面55()相連接之底 面552相對之出光面说， 彳及與該底 方形，其具有相對之兩料邊面別大致為一長 兮恭冰」 邊及相對之兩條短邊L2。 且，Γ:Τ0相對該導光板55之入光面別設置， ^ ^圓形外輪廓Μ、Ν分別與該人光面別 二= 外輪廟Μ之長軸Α，該第二橢圓形外 μ之短轴B，該第二橢圓形;m圓形外輪廟 L2相平行。 卜輪屝之長軸a分別與該短邊 面入體2〇發出之光線經由該導光㈣之入光 等mw^55中’經由該導光板55 %導（反射、折射 專）後從該導光板55之出光面554出射。 之入㈣Μ具有橢圓形之光場’該導光板％ 方形，該橢圓形之光場與該長方形形狀 之光二：光Γ度分佈均勾’故’該發光二極體20發出 之先可較充分、較均勾地經由該入光面550入射至導光板 =内’以使該背光模組50獲得較佳之出光效率及 度。 綜上所述，本發明確已符合發明專利之 ^出專财請。惟，以上所述輕為本發明之較佳實施方去 工自不旎以此限制本案之申請專利範圍。舉凡熟悉本 技藝之人士援依本發明之精神所作之等效修飾或變^，皆 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 201000818 圖1係先前背光模組之結構示意圖。 圖2係本發明第一實施例所提供之發光二極體之結構 示意圖。 圖3係圖2所示發光二極體沿III-III線之剖面示意圖。 圖4係圖1所示發光二極體之俯視示意圖。 圖5係本發明第二實施例所提供之背光模組之結構示[0002] The invention relates to a light-emitting diode, and more particularly to a light-emitting diode having a uniform light field, and a backlight module using the light-emitting diode. [Prior Art] At present, the Light Emitting Diode (LED) is gradually replacing the Cold Cathode Fluorescent Lamp due to its good light quality (that is, the spectrum emitted by the LED light source) and high luminous efficiency. f CCFL) becomes a backlight component in a display device. For details, see "Solid-State Lighting: Toward" by Michael S. Shur et al., Proceedings of the IEEE, Vol. 93, No. 20 (October 2005). Superior Illumination" article. However, the previous light-emitting diodes usually have a light field of approximately circular symmetry. The light intensity of the center of these light fields is strong, and the intensity of the light diffused from the center to the periphery is weaker, but this type of light field is in use. It is not always possible to meet actual needs. For example, as shown in FIG. 1 , a backlight module 10 includes a light-emitting diode 11 and a light guide plate 12 . After the light emitted by the light-emitting diode 11 is optically guided through the light guide plate 12 , It is converted into a light source and emitted from the light emitting surface 120 of the light guide plate 12. However, since the light field generated by the light emitting diode 11 is not uniform, the uniformity of the light emitted by the light emitting surface 120 is difficult to achieve the desired requirement. . In view of the above, it is necessary to provide a light-emitting diode having a uniform light field and a backlight module using the light-emitting diode. SUMMARY OF THE INVENTION 5 201000818 • Hereinafter, a light-emitting diode having a uniform light field and a backlight module using the light-emitting diode will be described by way of embodiments. A light emitting diode comprising a light emitting diode chip and a package encapsulating the light emitting diode chip, the package body comprising a reflective surface surrounding the light emitting diode chip and a reflective surface a light-emitting surface corresponding to the light-emitting diode wafer having a light conversion region formed by the light-emitting surface facing the recess in the package to enhance light emitted from the light-emitting diode wafer to the entire light-converting region The probability of reflection, which in turn causes the light-emitting diode to obtain a uniform light field. A backlight module includes a light guide plate, the light guide plate includes a light incident surface, and a light emitting surface connected to the light incident surface; and a light emitting diode opposite to the light incident surface of the light guide plate The light-emitting diode includes a light-emitting diode chip, and a package encapsulating the light-emitting diode chip, the package body comprising a reflective surface surrounding the light-emitting diode chip and a surface opposite to the light-emitting diode a light-emitting surface, the light-emitting surface corresponding to the light-emitting diode wafer ί has a light conversion region formed by the light-emitting surface facing the recess in the package, and the light emitted by the X-ray body is incident on the light from the light guide plate The surface is incident on the light guide plate, and is further optically guided by the light guide plate and then emitted from the light exit surface of the light guide plate. ▲ Compared with the prior art, since the light-emitting diode of the light-emitting diode has a light conversion region formed by the light-emitting surface facing the recess in the package, the light conversion region can enhance the light emitted by the light-emitting diode wafer in the light conversion region. The full anti-opposing rate occurs, so that the light-emitting diode obtains a uniform light field, and thus, when the X-emitting one is used as the light source of the backlight module, the backlight module 6 201000818 • the group can obtain better uniform light output. degree. [Embodiment] The present invention will be further described in detail below with reference to the drawings. Referring to FIG. 2 and FIG. 3 together, a light-emitting diode 20 according to a first embodiment of the present invention includes a light-emitting diode chip 21 and a package body 23'. The package body 23 has the light-emitting diode chip. 21 is packaged in it. The package body 23 is made of a transparent material, such as plastic or glass. When the package body 23 is made of plastic, the plastic can be selected from PMMA (P〇lymethylmethacrylate, polymethylmethacrylate), PC (Poly Carbonate). , polycarbonate, or silica resin as a material. The package body 23 is symmetrically distributed and has a center line L on which the geometric center of the LED body 21 is located. As shown in Fig. 3, the money 23 includes a reflecting surface 23A, and (10) a light emitting surface 232 connected to the reflecting surface 230. Referring to FIG. 4 together, the light-emitting surface 232 has a light conversion area 23, and the light conversion area 234 is located on a geometric central area of the light-emitting surface 232, and the light conversion area 234 is a curved surface. The light exiting surface is a rounded surface, that is, the projection of the light exiting surface 232 on a plane perpendicular to the center line L and has: a first outer shaped outer gallery M. In addition, the reflective surface is thinner than the annular surface of the wafer 21, and the annular surface has an inverted conical shape: the annular surface is adjacent to the opening on the side of the LED substrate 21 and is separated from the light-emitting surface. The polar body wafer 21 is an opening on the side. , the reflecting surface 23G coating method, the steaming method, the gold plating method - the reflecting film '(4) the range of the light emitted by the light emitting diode chip 21 is performed 7 201000818 . The limitation 'so that the light field of the light emitting diode 20 Approximate to an elliptical light field. As shown in Fig. 4, the light conversion region 234 is disposed as an elliptical surface, i.e., the projection of the light conversion region 234 on a plane perpendicular to the center line L has a second elliptical outer corridor N. The first and second elliptical outer porches ~M, n are concentric and the long axis A of the first elliptical outer wheel rim coincides with the short axis b of the second elliptical outer porch N, the second circular outer porch N The long axis a coincides with the minor axis B of the first elliptical outer wheel gallery. The light conversion region 234 can enhance the probability of total reflection of the light emitted by the LED chip 21 at the interface between the light conversion region 234 and the air. The light emitting diode chip 21 emits light to the light conversion region 234. After total reflection occurs, it is reflected by the reflective film on the reflecting surface 23 to the light emitting surface 232, and is emitted from the light emitting surface 232 to the outside. Therefore, the light conversion region 234 can reduce the center light intensity of the circular light field formed by the light-emitting diode 2, so that the light intensity distribution of the light field of the ellipse is uniform to obtain a uniform light field. It can be understood that the position of the light conversion region 234 can be adjusted correspondingly to the position of the light-emitting diode 21, which does not necessarily need to be located on the central region of the surface 232, for example, when When the light-emitting diode chip 2 is offset from the center line L_S in a certain direction, the light conversion region 23 can be offset from the center and the line L by a distance corresponding to the σ 4 direction to ensure the light emission: the pole body 20 obtains a uniformity. Light field. Referring to FIG. 7 together, a backlight color set 50 according to a second embodiment of the present invention uses the above-mentioned light emitting diode 2 () as a light source, and the backlight module 50 includes the light emitting diode 20, and Light guide plate The light guide plate 55 is substantially wedge-shaped as a whole, and has a light-emitting seedling 8 201000818 550' - a light-emitting surface opposite to the bottom surface 552 connected to the light-incident surface 55 (), and the bottom square, It has two opposite sides, which are roughly one long 兮 冰 ice side and two opposite short sides L2. Moreover, Γ: Τ0 is set relative to the light incident surface of the light guide plate 55, ^^the circular outer contour Μ, Ν respectively is different from the light surface of the person = the long axis of the outer wheel temple, the second elliptical outer μ The minor axis B, the second elliptical shape; the m circular outer wheel temple L2 is parallel. The long axis a of the rim and the light emitted by the short side entrance 2 are guided through the light guide (4), etc., through the light guide 55% (reflection, refraction) The light exit surface 554 of the light guide plate 55 is emitted. (4) Μ has an elliptical light field 'the light guide plate % square, the elliptical light field and the rectangular shape light two: the light intensity distribution is hooked 'therefore' the light emitting diode 20 is issued first enough The light entering the light guide plate 550 is incident on the light guide plate 005 to make the backlight module 50 obtain better light extraction efficiency and degree. In summary, the present invention has indeed met the invention patents. However, the above description is preferred to the preferred embodiment of the invention to limit the scope of the patent application in this case. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. [Simple description of the drawing] 201000818 Figure 1 is a schematic diagram of the structure of the previous backlight module. Fig. 2 is a schematic view showing the structure of a light-emitting diode according to a first embodiment of the present invention. 3 is a schematic cross-sectional view of the light-emitting diode of FIG. 2 taken along line III-III. 4 is a top plan view of the light emitting diode shown in FIG. 1. FIG. 5 is a structural diagram of a backlight module according to a second embodiment of the present invention;
意圖。 【主要元件符號說明】 背光模組 10 ' 50 發光二極體 11、20 導光板 12 ' 55 出光面 120 ' 554 發光二極體晶片 21 封裝體 23 反射面 230 出光面 232 光轉換區 234 入光面 550 底面 552 長軸 A、a 短軸 B、b 中心線 L 長邊 LI 短邊 L2 第一橢圓形外輪廊 M 第二橢圓形外輪廊 N 10intention. [Main component symbol description] Backlight module 10' 50 Light-emitting diode 11, 20 Light guide plate 12' 55 Light-emitting surface 120' 554 Light-emitting diode chip 21 Package 23 Reflecting surface 230 Light-emitting surface 232 Light-converting area 234 Light-in Face 550 Bottom 552 Long axis A, a Short axis B, b Center line L Long side LI Short side L2 First oval outer wheel gallery M Second oval outer wheel gallery N 10