TW200947800A - Directional coupler circuit board, directional coupler, and plasma producing apparatus - Google Patents

Directional coupler circuit board, directional coupler, and plasma producing apparatus Download PDF

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Publication number
TW200947800A
TW200947800A TW98101334A TW98101334A TW200947800A TW 200947800 A TW200947800 A TW 200947800A TW 98101334 A TW98101334 A TW 98101334A TW 98101334 A TW98101334 A TW 98101334A TW 200947800 A TW200947800 A TW 200947800A
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Taiwan
Prior art keywords
microwave
path
pattern
substrate
waveguide
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TW98101334A
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Chinese (zh)
Inventor
Hidetaka Matsuuchi
Shigeru Masuda
Ryuichi Iwasaki
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Noritsu Koki Co Ltd
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Publication of TW200947800A publication Critical patent/TW200947800A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • H01J37/32229Waveguides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32311Circuits specially adapted for controlling the microwave discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

A directional coupler circuit comprises first and second transmission paths whose distal ends project into a waveguide and whose root ends are interconnected at a connection point X. At least one of the first and second transmission paths has amplitude attenuating means therein. Therefore, the amplitudes at the connection point X of the microwaves propagated through the first and second transmission paths are substantially equal to each other. The difference between the sum L1+L2 of the distance L1 between the distal ends of the first and second transmission paths and the path length L2 of the first transmission path and the path length L3 of the second transmission path is (2n-1)λ/2 (where n is an integer and λ is the wavelength of the microwaves). The difference between the sum L1+L3 of the distance L1 and the path length L3 and the path length L2 is not (2n-1)λ/2.

Description

200947800 六、發明說明: 【發明所屬之技術領域】 本發明係有關於微波電路所使用之方向性結合電路基 板’使用該方向性結合電路基板之方向性結合器,以及 設有該方向性結合器之電漿產生裝置。 【先前技術】 習知上,以電漿照射被處理物,用以進行表面有機污 染物之去除、纟面改質、蝕刻、薄膜形成或薄膜去除。像 這樣的電漿產生裝置能夠於常溫常壓下產生轉,並利用 微波來產生電漿。如前述之電漿產生裝置中,冑常會由微 波產生裝置適當地偵測欲產生微波之功率,並將偵測結果 回傳給微波產生裝置,據以使微波功率之輸出能夠穩二 φ 目前,在❹m波功率時,必須將來自於微波產生裳 置,被引導於導波管中之部份微波功率,從導波管中取出, 一般利用方向性結合器作為取出之裝置。從組裝人電漿產 生裝置之觀點而言’需配置小型之方向性結合器,像是於 日本專利特时6-1 3271G號公報所實現之小型 社 合器。 裢 於上这專利文獻所不之方向性缺人器中m + 丨J〇盎中,將具有微帶 傳輸線之印刷基板配置於導 等波管之上,並將與微帶傳 連接的2根探針突出於導油技 S々導/皮營之内。㊂波管内流動之微波 將由這2根探針被取出 , 出到基板上的微帶傳輸線,進而擁取 出沿著導波管内_ -fc- ^ -S2- ^ "方向刖進之部份微波功率。 如上所述之電漿產生装 * 王褒置’來自於微波產生裝置,被200947800 6. TECHNOLOGICAL FIELD The present invention relates to a directional bond circuit substrate used in a microwave circuit, a directional bond using the directional bond circuit substrate, and a directional bond device Plasma generating device. [Prior Art] Conventionally, the object to be treated is irradiated with plasma for the removal of surface organic contaminants, surface modification, etching, film formation or film removal. A plasma generating apparatus like this can generate a rotation at normal temperature and normal pressure, and uses microwaves to generate plasma. In the plasma generating device described above, the microwave generating device appropriately detects the power of the microwave to be generated, and returns the detection result to the microwave generating device, so that the output of the microwave power can be stabilized. In the case of ❹m wave power, it is necessary to take some of the microwave power from the microwave generating skirt and guided into the waveguide, and take it out from the waveguide, and generally use a directional bonder as the device for taking out. From the viewpoint of assembling a human plasma generating device, it is necessary to arrange a small directional coupler, such as a small-sized social device realized by Japanese Patent Laid-Open Publication No. 6-1 3271G. In the directional finder that is not in the patent document, the printed substrate having the microstrip transmission line is placed on the waveguide, and the two connected to the microstrip are connected. The probe protrudes from the oil guiding technology. The microwave flowing in the three-wave tube will be taken out by the two probes, and will be sent out to the microstrip transmission line on the substrate, and then the part of the microwave which is _-fc-^-S2-^ " in the waveguide will be taken out. power. The plasma generating device as described above is from the microwave generating device and is

2014-10266^PF 3 200947800 引導於導波管中之入射微波,與不參與產生電漿而反射回 來導波管之反射微波中,只有其中一組微波(例如:入射 微波)會被方向性結合器擷取出來,並進行微波功率之偵 測。因此’於上述專利文獻所示之方向性結合器中,根據 導波營内2根探針的突出長度,將透過2根探針,從導波 吕内所取出的2組微波振幅進行調整,並根據振幅調整, 而能夠只擷取出其中一組微波。 然而,上述微波振幅調整之精確度要求極高,根據上 述專利文獻所示之探針長度之變化,會產生無法完全滿足 振幅調整之精確度要求這樣的問題。 專利文獻:日本特開平6-132710號公報 【發明内容】 會 有鑑於此,本發明之目的,在於提供小型方向性結合 電路基板及其方向性結合器,以及電漿產生裝置,用以能 夠很精確地擷取出導波管所傳遞之微波。 本發明提供-種方向性結合電路基板,包括:基板; 第一傳送路徑,配置於該基板之上,具有[端及第二端; 第一傳送路徑,配置於該基板之上,具有第三端及連接於 2二端之第四端;第-導體,包括第-底端及第一前端, ^一底端連㈣該第—傳送路徑之該第—端,該第一前 端犬出於微波傳遞之導波空間中;及第二導體,包括第二 t端及/:1端1該第二底端連接於”二傳送路徑之該 弟一‘ ’該第一前端沿荖撒妨夕種、备+ ,B 者微,皮之傳遞方向,與該第一前端 相隔既定距離,並突出於該導波空間中;及振幅衰減裝置,2014-10266^PF 3 200947800 In the incident microwave guided by the waveguide, and the reflected microwave reflected back to the waveguide without participating in the generation of plasma, only one of the microwaves (for example: incident microwave) will be directionally combined. The device is taken out and the microwave power is detected. Therefore, in the directional coupler shown in the above patent document, the amplitudes of the two sets of microwaves taken out from the guide wave are adjusted by the two probes according to the protruding length of the two probes in the guide wave camp. And according to the amplitude adjustment, it is possible to extract only one of the microwaves. However, the above-described accuracy of the microwave amplitude adjustment is extremely high, and according to the change in the length of the probe shown in the above patent document, there arises a problem that the accuracy of the amplitude adjustment cannot be completely satisfied. In view of the above, it is an object of the present invention to provide a small directional bonding circuit substrate and a directional bond thereof, and a plasma generating device for enabling Accurately extract the microwave transmitted by the waveguide. The invention provides a directional bonding circuit substrate, comprising: a substrate; a first transmission path disposed on the substrate, having [end and second ends; a first transmission path, disposed on the substrate, having a third And a fourth end connected to the two ends; the first conductor includes a first bottom end and a first front end, and a bottom end is connected to the fourth end of the first transmission path, the first front end dog is out The second conductor includes a second t-end and/or a 1st end 1 and the second bottom end is connected to the "second transmission path of the younger one" 'the first front end along the Caesar Kind, preparation +, B, micro, the direction of transmission of the skin, separated from the first front end by a predetermined distance, and protruding in the guided space; and amplitude attenuation device,

2014-10266-PF 200947800 用以衰減微波,係被配置於該第一傳送路 路徑至少其中之一,用以於該第二端及該第四端之連= 上,使得該第-傳送路徑及該第二傳送路握上各自傳遞之 微波振幅一致,装拉你_+认 _ _ …幻 第一前端及該第二前端間 之距離為u,包含該第一導體長度之該第_傳送路徑之路 徑長為L2,兩者之和為L1+L2,u+L2與包含該第 長度且路徑長為U之該第二傳送路徑之間的長度差,係等 於(2n-l)"2(n為整數且又為微波之波長),該距離u 與該路控長L3之和為L1+L3,與該路徑長L2之長度差, 係不等於(2η-1)Λ /2。 依據此-組成方式’第一及第二傳送路徑上各自傳遞 之微波振幅,於第-及第二傳送路徑之連接點上為一致。 而且’當在導波空間中傳遞2組互相相反的微波時,於第 一及第二傳送路徑之連接點卜 逆赉點上其中—方之微波振幅確實 ❹ 變為0。因此,確實地能夠只讓另一微波摘取出來。 為使本發明之上述目的、特徵和優點能更明顯易僅, 下文特舉-較佳實施例,並配合所附圖式,作詳細說明如 下。 【實施方式】 下文係配合圖示說明本發明之較佳實施方式。此外, 於下文之圖示中,㈣或類似之元件係以相同或類似之符 號表示之,並省略相關之說明。 第1圖係顯示依據本發明實施例之具有方向性結合器 之電漿產生裝置整體結構之部份侧葙 1 训硯圖。於此實施例中,2014-10266-PF 200947800 for attenuating microwaves, configured to be at least one of the first transmission path for connecting the second end and the fourth end to make the first transmission path and The amplitude of the microwaves transmitted by the second transmission path is the same, and the distance between the first front end and the second front end is u, and the first transmission path including the length of the first conductor is included. The path length is L2, the sum of the two is L1+L2, and the length difference between u+L2 and the second transmission path including the first length and the path length U is equal to (2n-l)"2 (n is an integer and is also the wavelength of the microwave), and the sum of the distance u and the governor length L3 is L1+L3, which is different from the length of the path length L2, and is not equal to (2η-1) Λ /2. According to this, the microwave amplitudes transmitted by the respective first and second transmission paths are identical at the connection point of the first and second transmission paths. Further, when two sets of mutually opposite microwaves are transmitted in the guided wave space, the microwave amplitude of the square at the connection point of the first and second transfer paths becomes "0". Therefore, it is indeed possible to extract only another microwave. The above described objects, features, and advantages of the invention will be apparent from the description and appended claims appended claims [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In addition, in the following figures, (four) or similar elements are denoted by the same or similar symbols, and the related description is omitted. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial side elevational view showing the overall structure of a plasma generating apparatus having a directional bonder in accordance with an embodiment of the present invention. In this embodiment,

2014-10266-PF 5 200947800 電漿產生裝置PU為電漿 處理之工件,並利用微波,而二用以產生電衆以照射待 此夠於常溫常壓下產生電漿。 於此實施例中,如第丨圖 第一導浊普u # 丁之電漿產生裝置pu,係包括 弟等,皮官u、第二導波管12、筮-播、 决捉番9n 第二導波管13、微波產 生裝置20、電漿產生單元3 月動式短路器40、循環3| 50、虛擬負載6〇、細部調 ° (StUb tuner) 70、方向性 、,·= σ Is 10及偵測器8 6。2014-10266-PF 5 200947800 The plasma generating device PU is a plasma-treated workpiece and uses microwaves, and the second is used to generate electricity for irradiation to generate plasma at normal temperature and pressure. In this embodiment, as shown in the figure, the first guide turbidity Pu u #丁之 plasma generating device pu, including the brother, etc., the skin officer u, the second waveguide tube 12, 筮-播, 决捉番9n Two waveguides 13, microwave generating device 20, plasma generating unit 3, moon-type short circuit 40, cycle 3| 50, virtual load 6 〇, detail adjustment (StUb tuner) 70, directionality, ··= σ Is 10 and detector 8 6.

-、第二及第三導波管u、12、13,例如由鋁等非 非磁性金屬所組成,係為具有矩形截面之長管,將微波產 生装置20所產生之微波導向電漿產生單元3〇,❹沿著 較長之方向傳遞。第一、第二及第三導波管……以彼 此:以凸緣互相連接’並將微波產生裝置2。配置於第一導 波g 11之上。進一步,將細部調節器7〇設置於第二導波 管12中,以及將電漿產生單元3〇設置於第三導波管w 中。再者,如第1圖所示,循環器5〇及方向性結合器1〇 介於第一導波管1與第二導波管12之間,而第三導波管 13之一端與滑動式短路器4〇相連接。 第一導波管11、第二導波管12及第三導波管13,各 自利用金屬平板所組成的上面板 '下面板以及2個側面板 來組成方柱狀’將凸緣設置於其兩端之中。此外,並不限 於上述之平板組成方式,像是透過擠壓成形及折彎板狀材 料等加工方式所形成之矩形導波管或非分割型導波管,亦 可加以使用。進一步’不限於学形截面之導波管,舉例來 講,亦可使用橢圓截面之導波管。亦不限於非磁性金屬, 2"〇14-l〇266-PF 6 200947800 可使用各種能夠導波的材料來組成。 微波產生裝置20包括裝置主體21及微波發送天線 22,裝置主體21具有磁控管之微波產生源,用以產生如 2.45GHz之微波,而微波發送天線22將裝置主體21所產 生之微波放出至第一導波管11内部中。於本實施例之電漿 產生裝置Ρϋ中’微波產生裝置2〇適用於能夠連續改變微 波能里’如1〜3000W,並加以輸出之微波產生裝置。 ⑩ 於微波產生裝置20中,微波發送天線22從裝置主體 21突設出來’固定配置於第一導波管η中。具體來講, 裝置主體21配置於第一導波管η之上面板hu,微波發 送天線22通過穿透上面板uu之穿孔ιη,以突出之方式 固定於第一導波管11内部之導波空間11〇中。藉由此一組 成方式’將微波發送天線22所放出之微波,導向至第一、 第一及第二導波管11、12、13内,並傳遞至電漿產生單元 30 = _ 電漿產生單元30包括8個電漿產生喷嘴31,以左右 排成一列之方式,突設於第三導波管13之下面板13Β。藉 由電漿產生單元30之電漿所產生之被處理工件等具有一 遞送方向,與該遞送方向垂直之寬度方向所具有的最大尺 寸,大致上符合電漿產生單元3〇之寬度,亦即8個電漿產 生喷嘴31之左右方向的排列寬度。如此一來,於遞送被處 理工件時,能夠同時針對工件之整個表面(下面板1祁之 相對面)進行電漿處理。其次,8個電漿產生噴嘴31之排 列間隔,最好能夠對應於所傳遞之微波波長λ。舉例來講, 2014-10266-pf 7 200947800 最好以波長;I的1/2、1/4作為間距來排列電漿產生喷嘴 31 ’在使用2. 45GHz之微波,且矩形導波管11、12、13之 截面積為2. 84英吋xl. 38英吋的情況下,由於又為23〇 公爱,則可將電漿產生喷嘴31以115公釐(ι/2又)、或 5 7. 5公釐(1 / 4 乂)的間距進行排列。- the second and third waveguides u, 12, 13, for example, made of a non-non-magnetic metal such as aluminum, which is a long tube having a rectangular cross section, and directs the microwave generated by the microwave generating device 20 to the plasma generating unit. 3〇, ❹ is passed along the longer direction. The first, second and third waveguides are connected to each other by a flange and the microwave generating device 2 is provided. It is disposed above the first waveguide g 11 . Further, the detail adjuster 7 is disposed in the second waveguide 12, and the plasma generating unit 3 is disposed in the third waveguide w. Furthermore, as shown in FIG. 1, the circulator 5 〇 and the directional coupler 1 〇 are interposed between the first waveguide 1 and the second waveguide 12, and one end of the third waveguide 13 is slid. The type of short circuiters 4 are connected. The first waveguide 11, the second waveguide 12, and the third waveguide 13, each of which uses a top plate of the metal plate and a lower panel and two side panels to form a square column. Among the two ends. Further, it is not limited to the above-described flat plate forming method, and a rectangular waveguide or a non-divided waveguide which is formed by a processing method such as extrusion molding and bending of a sheet material can also be used. Further, it is not limited to the waveguide of the cross-section of the shape, and for example, a waveguide of an elliptical cross section may be used. Nor is it limited to non-magnetic metals. 2"〇14-l〇266-PF 6 200947800 can be composed of various materials capable of guiding waves. The microwave generating device 20 includes a device body 21 and a microwave transmitting antenna 22, and the device body 21 has a microwave generating source of a magnetron for generating a microwave such as 2.45 GHz, and the microwave transmitting antenna 22 discharges the microwave generated by the device body 21 to The inside of the first waveguide 11 is inside. In the plasma generating apparatus of the present embodiment, the microwave generating means 2 is applied to a microwave generating apparatus capable of continuously changing the microwave energy, such as 1 to 3000 W, and outputting it. In the microwave generating apparatus 20, the microwave transmitting antenna 22 is protruded from the apparatus main body 21 and is fixedly disposed in the first waveguide η. Specifically, the device body 21 is disposed on the upper panel hu of the first waveguide η, and the microwave transmitting antenna 22 is fixed to the guided wave inside the first waveguide 11 by penetrating through the through hole u of the upper panel uu. Space is 11 inches. By means of this composition, the microwave emitted by the microwave transmitting antenna 22 is guided into the first, first and second waveguides 11, 12, 13 and transmitted to the plasma generating unit 30 = _ plasma generation The unit 30 includes eight plasma generating nozzles 31 which are arranged in a row in the left and right directions and protrude from the lower panel 13A of the third waveguide 13. The workpiece to be processed or the like produced by the plasma of the plasma generating unit 30 has a delivery direction, and the maximum dimension in the width direction perpendicular to the delivery direction substantially coincides with the width of the plasma generating unit 3, that is, The arrangement width of the eight plasma generating nozzles 31 in the left-right direction. In this way, when the workpiece to be processed is delivered, it is possible to simultaneously perform plasma treatment on the entire surface of the workpiece (the opposite side of the lower panel 1). Next, the arrangement interval of the eight plasma generating nozzles 31 preferably corresponds to the wavelength λ of the microwave to be transmitted. For example, 2014-10266-pf 7 200947800 preferably aligns the plasma generating nozzle 31' with a wavelength of 1/2, 1/4 of the wavelength I, using a microwave of 2.45 GHz, and a rectangular waveguide 11, The cross-sectional area of 12 and 13 is 2.84 inches xl. In the case of 38 inches, since the plasma is 23 inches, the plasma generating nozzle 31 can be 115 mm (ι/2), or 5 7. Arrange the spacing of 5 mm (1 / 4 乂).

電漿產生喷嘴31包括導體32,導體32穿過第三導波 管13之下面板13Β,並以固定長度突出於導波空間13〇之 中。透過導體32,電漿產生喷嘴31接收傳遞於第三導波 管13内部之微波,並利用微波能量(微波功率),使得電 漿能夠產生。 滑動式短路器40,為了能夠改變微波之反射位置以調 整駐波樣式而與第三導波管13之—側相連結,係用以對每 一電漿產生喷嘴31所具有之導體32,與第三導波管以内 部傳遞之微波的結合狀態進行最佳化。進一步,在不使用 駐波之情況下,則設置具有吸收電波功能之虛擬負載,用 以取代滑動式短路器40。 J月動式短路器40,係且右斑楚-道、士垃 /、百興第二導波管13相同矩形 截面之框形結構,且滑動式 初式紐路1^ 40之内部設有圓柱狀之 反射塊42。駐波樣式之最佳化俜 化你取决於反射塊42之移動。 針對傳遞給電漿產生單元3Q之微波中,對於在電毅產 ^單元30中無消耗任何功率而返回的反射微μ言,㈣The plasma generating nozzle 31 includes a conductor 32 which passes through the lower panel 13A of the third waveguide 13 and protrudes in a fixed length in the waveguide space 13A. Through the conductor 32, the plasma generating nozzle 31 receives the microwave transmitted to the inside of the third waveguide 13, and utilizes microwave energy (microwave power) to enable the plasma to be generated. The sliding type short circuiter 40 is connected to the side of the third waveguide 13 in order to change the reflection position of the microwave to adjust the standing wave pattern, and is used to generate the conductor 32 of the nozzle 31 for each plasma, and The third waveguide is optimized with the combined state of the internally transmitted microwaves. Further, in the case where the standing wave is not used, a dummy load having a function of absorbing electric waves is provided instead of the sliding type short-circuiter 40. The J-month-type short-circuiting device 40 is a frame-shaped structure of the same rectangular cross section of the right spot-channel, Shira/, and Baixing second waveguide 13, and the inside of the sliding type initial circuit 1^40 is provided. A cylindrical reflective block 42. The optimization of the standing wave pattern depends on the movement of the reflective block 42. For the microwaves transmitted to the plasma generating unit 3Q, the reflections that are returned without consuming any power in the unit 30, (4)

Is 50,例如内藏磁柱、具導 、,故… 反B ^式之二埠循環器,係用 1將上述之反射微波導向虛擬 巧非返回至微波產 生裝置20。由於配置這樣的循 衣益ΰυ進而防止微波產生Is 50, for example, a built-in magnetic column, a guided, and so on... anti-B ^ type two-turn circulator, is used to guide the reflected microwaves described above to the microwave generating device 20 . Due to the configuration of such a benefit, it prevents microwave generation.

2014-10266-PF 8 200947800 裝置20因為反射微波而過熱之情況。 虛擬負載60為轉換熱能之水冷式(亦可為空冷式)電 波吸收器,用以吸收前述之反射微波。於虛擬負載6〇中, 設有讓冷卻水流通於内部之冷卻水流通口,將熱轉換反射 微波所產生之熱能,以冷卻水進行熱交換。 細部調節器(stub tuner) 70包括3個細部調節器單 元70A〜70C’係以固定間隔連續地配置於第二導波管 之上面板12U之上,用以調整第二導波管12及電漿產生嘴 嘴31之阻抗。3個細部調節器單元70A〜70C具有相同之 結構,且各自包括突出於第二導波管12之導波空間12〇中 之管段71。 3個細部調節器單元70A〜7〇c各自所具有之管段π, 於導波空間120中之突出長度係為可調整。舉例而言,在 監測微波電源功率之後,找出導體32之最大功率消耗點 (產生最小反射微波點),用以決定這些管段之突出長度。 ❹此外,此一阻抗調整方式,必要時需與滑動式短路器4〇同 時進行操作。 接著,說明與此實施例相關之方向性結合器ι〇。於此 實施例中’如Ρ圖所示’方向性結合器1〇配置於循環器 5〇及第二導波管12之間’透過第-、第二及第三導波管 η、12、13,將來自於微波產生裝置2〇傳遞至電漿產生單 元:。之入射微波功率其中一部份摘取出來。第2圖係顯示 ㈣本發明實施例之方向性結合器1G之結構透視圖。 於此實施例中,方向性結合器1〇包括方向性結合器用2014-10266-PF 8 200947800 The device 20 is overheated due to reflection of microwaves. The virtual load 60 is a water-cooled (also air-cooled) electromagnetic absorber that converts thermal energy to absorb the aforementioned reflected microwaves. In the virtual load 6〇, a cooling water circulation port through which cooling water flows is provided, and heat generated by reflecting and reflecting the heat is exchanged, and heat is exchanged by the cooling water. The stub tuner 70 includes three detail adjuster units 70A to 70C' which are continuously disposed at a fixed interval on the upper surface of the second waveguide tube 12U for adjusting the second waveguide 12 and the electric The slurry produces the impedance of the mouth 31. The three detail adjuster units 70A to 70C have the same structure, and each includes a tube section 71 that protrudes in the waveguide space 12A of the second waveguide 12. The tube segments π of each of the three detail adjuster units 70A to 7〇c are adjustable in the pilot wave space 120. For example, after monitoring the power of the microwave power source, the maximum power consumption point of the conductor 32 (which produces the minimum reflected microwave point) is determined to determine the protruding length of the tube segments. ❹ In addition, this impedance adjustment method needs to be operated simultaneously with the sliding type short-circuiting device 4 if necessary. Next, the directional bonder ι associated with this embodiment will be described. In this embodiment, 'the directional coupler 1' is disposed between the circulator 5 〇 and the second waveguide 12 as shown in the figure, 'transmitting through the first, second and third waveguides η, 12, 13. Transfer the microwave generating device 2〇 to the plasma generating unit:. A portion of the incident microwave power is extracted. Fig. 2 is a perspective view showing the structure of the directional coupler 1G of the embodiment of the present invention. In this embodiment, the directional bond 1 〇 includes a directional bond

2014-10266-PF 9 200947800 導波管80及方向性結合電路基板81。方向性結合 波管㈣,與第-、第二及第三導波管u、12、u相同導 由銘等非非磁性金屬所組成,係為具有矩形截面之長管,2014-10266-PF 9 200947800 The waveguide 80 and the directional combination circuit board 81. Directional combination Wave tube (4), which is the same as the first, second and third waveguides u, 12, u, is composed of non-non-magnetic metal such as Ming, and is a long tube with a rectangular cross section.

將微波產生裝置20所產生之微波導向電聚產生單元I 較長U向傳遞。進—步,針對傳遞給電裝產生 早凡3〇之微波中,對於在電襞產生單元3"無消 功率而返回至微波產生裝置2〇側的反射微波來講, 參 ❹ 用方向性結合器用導波管80進行傳遞。 如第2圖所^之實施财,方向性結合㈣導波管 …個結合孔84Α、84Β (第一、第二結合孔 合孔84Α、84Β,各自以一對一之 個、、口 方式’對應於方向性社人 電路基…2根探針83Α、83Β (第'、第二導體、『: ^將所對應之探針_、_各自插人。方向性結 基 板81經由結合孔84Α、84Β,使得方向性結合 基 1探針_、_突出於方向性結合㈣導波管1 如第2圖所示,方向性結合電 線82,具有既定之路徑。微帶_基板81包括微帶傳輸 仏 傳輪線82與上述之2根摄 83A、83B相連接,用以將方向性結合器用導波管 部所傳遞之部份入射微波及反射微波,各自經The microwave guided by the microwave generating device 20 is guided to the electropolymer generating unit I for long U-direction transmission. Step-by-step, for the microwave that is transmitted to the electrical equipment to generate an early 3 〇, for the reflected microwave that is returned to the side of the microwave generating device 2 without the power generation, the reference directional coupler is used. The waveguide 80 is transmitted. As shown in Figure 2, the directional combination (4) waveguides... a combination of holes 84Α, 84Β (the first and second joint holes 84Α, 84Β, each in a one-to-one, mouth way ' Corresponding to the directional social circuit base... 2 probes 83Α, 83Β (the 'the second conductor, 『: ^ will insert the corresponding probes_, _ each. The directional junction substrate 81 passes through the coupling hole 84Α, 84Β, such that the directional bond 1 probe _, _ protrudes from the directional bond (4) the waveguide 1 as shown in Fig. 2, the directional bond wire 82 has a predetermined path. The microstrip _ substrate 81 includes microstrip transmission The twirling wheel line 82 is connected to the above two photographic 83A, 83B for inputting the microwave and the reflected microwave of the portion transmitted by the directional coupler with the waveguide portion.

83B,傳遞至微帶傳輸線82〇 針83A 在接下來的說明裡,將進—弗 波管80之結合孔84A、請,以及方迷方向性結合·器用導 及方向性結合電路基板81 2014-10266-PF 10 200947800 之微帶傳輪線82。第3圖係用 管8〇之結合孔84八、刚 方向性結合器用導波 微帶傳輸線82。 °眭結合電路基板81之 如第3圖所不,方向性結合器 84A、84B ,俜沪荽古& t 导波管80之結合孔 以既定距離;Γ隔^ 9 述之距錐τ“ 《第-别端之間),亦同樣以上 述之距離L1相隔開, 上 合孔“A,,突出二:性結合器用導波管8。之結 播士# 出於方向性結合器用導波管80内部之 導波空間中。這些探 守及S Μ円邵之 〇Π 、MB,將方向性結合器用導波 管80内部所傳遞之部 守及 微帶傳輸線82。 射微波及反射微波’各自傳遞至 嫩嫌例巾&夠彳貞職波功率之m 86,係連 接於微ΊΤ傳輸線82之連接點 連接點X(第二端和第四端之連接 點,或者第一底端和第二 帶傳輸線82之連接q t 接 便能夠透過微 逆楼點X,偵測出微波功率。 微帶傳輸線82包括篦m ^ 枯第一傳送路徑及第二傳送路徑,第 一傳送路徑(第一導艚牧 路位)從探針83A之前端P1到連接 點X,、第二傳送路徑(第二導體路徑)從探針83B之前端 P3到連接點X。於第—、链 第二傳送路徑上,各自具有用來 衰減振幅之衰減器85A、85B。衰減器8W為互相獨 =係可各自叹疋衰減量,用以根據所設定之衰減量, 使得在配琴的第—、第二傳送路徑上所傳遞之人射微波及 反射微波之振幅分別衰減下來。進-步,微帶傳輸線82之83B, transmitted to the microstrip transmission line 82, the pin 83A. In the following description, the bonding hole 84A of the inlet-fubo tube 80, and the direction and direction of the combination of the direction and the combination of the circuit board 81 2014- 10266-PF 10 200947800 Microstrip transmission line 82. Fig. 3 shows a waveguide microstrip transmission line 82 for the rigid directional combiner with a coupling hole 84 of the tube 8 。.眭 眭 电路 电路 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭 眭The "between the other ends" is also separated by the above-mentioned distance L1, and the upper hole "A," protrudes two: the waveguide 8 for the sex combiner. The knot is broadcasted in the guided wave space inside the waveguide 80 for the directional bond. These stalks and S Μ円 之 、 , MB, and the directional connector are transmitted inside the waveguide 80 and the microstrip transmission line 82. The microwaves and the reflected microwaves are respectively transmitted to the n-type towel & m 86, which is connected to the connection point X of the micro-transmission line 82 (the connection point of the second end and the fourth end, Alternatively, the connection qt of the first bottom end and the second strip transmission line 82 can detect the microwave power through the micro-reverse point X. The microstrip transmission line 82 includes a first transmission path and a second transmission path. A transmission path (first guiding path) from the front end P1 of the probe 83A to the connection point X, and a second transmission path (second conductor path) from the front end P3 of the probe 83B to the connection point X. The second transmission path of the chain has respective attenuators 85A, 85B for attenuating the amplitude. The attenuators 8W are mutually independent sigh attenuation amounts, which are used in the piano according to the set attenuation amount. The amplitudes of the human-transmitted microwaves and the reflected microwaves transmitted on the first and second transmission paths are respectively attenuated. Further, the microstrip transmission line 82

2014-10266-PF 200947800 第-傳送路徑所具有之既定距離L2,及第二傳送路徑所具 有之既定距離L3,係用以形成微帶傳輸線82之形狀。、 舉例來講,可使用3個晶片電阻來組成衰減器85卜 85B。如第3圖所示,衰減器85A係由3個晶片電阻川、 ⑴R13以〖字型連接而成,而衰減^ 85β係由3個晶 片電:且R21、R22、R23以π字型連接組成。衰減器心、 5Β各自改變其中的電阻RU、R12、ri3、R2m聊 Φ ❹ 之電阻值,用以實現所需之衰減量。此外,與衰減器似、 之哀減量間相關之必要條件,將說明如下。 ㈣方向性結合器用導波f 8〇内傳遞之入射微波 ,ί於㈣探針83A傳送至微帶傳輸線82之人射微波而 ^入射微波將選取第一路線,從探針83Α之前端η (第 :二)開始,經由位置P2到達連接點χ為止。因此,第 路線長度為L2。除此之外,對於經由探針㈣傳 $至^傳輸線82之人射微波而言,以探針m之前端 為基準之情況下,入射微波將選取第二路線,從探針m 之剛端Pi開始,於方向性結合器用導波管8〇内進行傳遞, 探針83Β之前端ρ3(第二前端),再經由前端ρ3 下’ n路線之路線長 度為L1+L3。 另-方面,針對方向性結合器用導波管8〇内傳遞之反 微波中’對於經由探針83B傳送至微帶傳輪線^之反射 二:而言,反射微波將選取第三路線’從探針83B之前端 開始’到達連接點X為止。因此,第三路線之路線長度2014-10266-PF 200947800 The predetermined distance L2 of the first transmission path and the predetermined distance L3 of the second transmission path are used to form the shape of the microstrip transmission line 82. For example, three chip resistors can be used to form the attenuator 85b 85B. As shown in Fig. 3, the attenuator 85A is composed of three chip resistors, (1) R13, and the attenuation ^ 85β is composed of three wafers: and R21, R22, and R23 are connected by π-type. . The attenuator cores, 5Β each change the resistance of the resistors RU, R12, ri3, R2m Φ ❹ to achieve the desired amount of attenuation. In addition, the necessary conditions related to the attenuation of the attenuator will be described below. (4) The directional bonder uses the incident microwave transmitted by the guided wave f 8 ,, and the person transmitted to the microstrip transmission line 82 by the probe 83A emits the microwave and the incident microwave selects the first route from the front end η of the probe 83 ( The first: b) begins, and reaches the connection point 经由 via the position P2. Therefore, the length of the first route is L2. In addition, for the person who transmits the microwave through the probe (4) to the transmission line 82, in the case where the front end of the probe m is used as the reference, the incident microwave will select the second route from the rigid end of the probe m. Pi starts to transmit in the directional coupler with the waveguide 8 ,, the probe 83 Β the front end ρ3 (the second front end), and the length of the route through the front end ρ3 'n route is L1+L3. On the other hand, in the anti-microwave transmitted in the yoke of the directional connector for the waveguide 8, for the reflection 2 transmitted to the microstrip line via the probe 83B, the reflected microwave will select the third route from The front end of the probe 83B starts to 'reach the connection point X. Therefore, the route length of the third route

2〇l4-l〇266'PF 12 200947800 為um於經由探針83A料至微㈣輸線^ 之反射微波而言,以探針83B之前端P3為基準之情況下, 反射微波將選取第四路線,從探針83β之前端p3 ^始,於 方向性結合器用導波管80内進行傳遞,而到達探針似之 前端π,再經由前端P1、位置P2到達連接點χ為止。於 此情況下,此一第四路線之路線長度為lHL2。2〇l4-l〇266'PF 12 200947800 is the reflection microwave of the um through the probe 83A to the micro (four) transmission line ^, with the front end P3 of the probe 83B as the reference, the reflected microwave will select the fourth The route is transmitted from the directional connector in the waveguide 80 from the front end p3 of the probe 83β, and reaches the front end π of the probe, and reaches the connection point 经由 via the front end P1 and the position P2. In this case, the route length of this fourth route is lHL2.

其次’將針對上述之距離u、L2、L3間的必要條件, 以及衰減器85A、85B之衰減量間的必要條件進行說明。於 此實施例之方向性結合器10中,並無伯測到方向性結合器 用導波管80内所傳遞反射微波之功率,為了偵測出入射微 波之功率,上述之距離L1、L2、L3及衰減器85Α、85β之 衰減量’需滿;i下述之條件。再者,$向性結合器用導波 管80内所傳遞入射微波及反射微波之波長均為又。 首先,如上所述,上述之第三路線及第四路線,係為 反射微波到達微帶傳輸線82之連接點χ之路線。第三路線 之路線長度為L3’而第四路線之路線長度為L1+u。於此 情況下,第三路線與第四路線之路線長度差為 (2η 1)λ/2,加之,若第三路線、第四路線上各自傳送的 反射微波之振幅彼此相等,則各自傳送的反射微波將彼此 相消,而不會有反射微波從連接點Χ輸出。也就是說,反 射微波需符合以下2個必要條件。 (1)路線長度為L3之第三路線與路線長度為 之第四路線,兩者之爭線長度差為(2η_1)λ /2(n為整數)。 亦即,第三路線、第四路線上各自傳送的反射微波係為反 2014-102 66—PF 13 200947800 相。 (2)第三路線、第四路線上各自傳送的反射微波之振 幅係為相等。 藉由個別調節衰減器85A、8^之衰減量,便能夠滿足 上述之第(2)條件。 其次,如上所述,上述之第一路線及第二路線,係為 入射微波到達微帶傳輸線82之連接點χ之路線。第一路線 〇 之路線長度為L2’而第二路線之路線長度為L1+L3。因此, 若第路線與第一路線之路線長度差至少不滿足 (2η 1)λ/2的情況下’則各自傳送的人射微波將不會彼此 相消,並從連接點X輪出入射微波。也就是說,反射微波 需符合下列之必要條件。 ⑻路線長度為L2 H線與料長度為L1+L3 之第二路線,兩者之路線長度差不為(2n-iu/2 (n為整 參Next, the necessary conditions between the above-described distances u, L2, and L3 and the necessary conditions between the attenuation amounts of the attenuators 85A and 85B will be described. In the directional coupler 10 of this embodiment, the power of the reflected microwaves transmitted by the directional coupler waveguide 80 is not detected. In order to detect the power of the incident microwave, the above-mentioned distances L1, L2, and L3 are not detected. And the attenuation amount of the attenuators 85A, 85β is required to be full; i the following conditions. Further, the wavelengths of the incident microwaves and the reflected microwaves transmitted through the waveguide 80 for the directional coupler are both again. First, as described above, the third route and the fourth route described above are routes in which the reflected microwaves reach the connection point 微 of the microstrip transmission line 82. The third route has a route length of L3' and the fourth route has a route length of L1+u. In this case, the difference in the length of the route between the third route and the fourth route is (2η 1)λ/2, and if the amplitudes of the reflected microwaves respectively transmitted on the third route and the fourth route are equal to each other, respectively The reflected microwaves will cancel each other without the reflected microwaves being output from the connection point. In other words, the reflected microwaves must meet the following two requirements. (1) The third route with the length of the route L3 and the fourth route with the length of the route, the difference in the length of the dispute between the two is (2η_1)λ /2 (n is an integer). That is, the reflected microwave system transmitted on each of the third route and the fourth route is the reverse phase of 2014-102 66-PF 13 200947800. (2) The amplitudes of the reflected microwaves respectively transmitted on the third route and the fourth route are equal. The condition (2) described above can be satisfied by individually adjusting the attenuation amounts of the attenuators 85A, 8^. Next, as described above, the first route and the second route described above are routes where the incident microwave reaches the connection point 微 of the microstrip transmission line 82. The route of the first route 〇 is L2' and the route length of the second route is L1+L3. Therefore, if the difference between the route length of the first route and the first route does not satisfy at least (2η 1)λ/2, then the respective transmitted human microwaves will not cancel each other, and the incident microwave is taken out from the connection point X. . In other words, the reflected microwaves must meet the following requirements. (8) The route length is L2 H line and the second route with material length L1+L3, the difference between the two routes is not (2n-iu/2 (n is the whole parameter)

舉例來講,當路線長度A 為L2之第一路線與路線長度為 L1+L3之第一路線,兩者之 格琛長度差為ηΛ(η為整數) 時’便能夠滿足上述之笛^ 、政Μ 江之第(3)條件。於此情況下,第一路 第一路線上各自傳送# 疋叼夂射微波係為同相,相 結合器用導波管8G所僂^ λ u 方向性 “ 士 所傳遞之入射微波,從連接點X所輸出 入射微波之振幅較大,因 所翰出 合程度。 因此^升了方向性結合器Η)之結 84A、 於一實施例中, 84B間之距離 方向性結合器用導波管 為λ /4,於微帶傳輸線 80之結合孔 82中,距離For example, when the route length A is the first route of L2 and the route length is L1+L3, the difference between the lengths of the two is ηΛ (η is an integer), then the above-mentioned flute can be satisfied. Politics Jiang Zhidi (3) conditions. In this case, the first transmission of the first route on the first route is the same phase, and the phase combiner uses the waveguide 8G to 偻^ λ u the directionality of the incident microwave transmitted from the connection point X. The amplitude of the incident microwave is large, and the junction of the directional connector 84) is 84A. In one embodiment, the waveguide for the distance directional coupler between 84B is λ /4. In the bonding hole 82 of the microstrip transmission line 80, the distance

2014-10266-PF 14 200947800 為L2之第-傳送路徑與距離為L3之第二傳送^之差為 "4,於此情況下,對於路線長度為L3之第三路線與路線 長度為謂之第四路線而言’兩者之路線長度差成為 又/2,也因此,第三路線、第四路線上各自傳送的反射微 波成為反相。另一方面,對於路線長度為L2之第一路線與 路線長度為L1+L3之第二路線而言,兩者之路線長度相2014-10266-PF 14 200947800 The difference between the first transmission path of L2 and the second transmission distance of distance L3 is "4. In this case, the third route with the route length L3 and the length of the route are said to be In the fourth route, the difference in the length of the route between the two becomes /2, and therefore, the reflected microwaves respectively transmitted on the third route and the fourth route become inverted. On the other hand, for the first route with the route length L2 and the second route with the route length L1+L3, the route length of the two routes

等,也因此,第-路線、第二路線上各自傳送的入射微波 係為同相。 偵測器86’透過微帶傳輸線82之連接點χ,偵測輸出 之入射微波功率,並將偵測結果輸出至微波產生裝置別之 裝置主體21。裝置主冑21便根據摘測結果控制微波產生 源’使得微波產i源所產生之微波輸出能夠穩定。 其次,針對方向性結合電路基板81之具體結構進行相 關說明。第4圖係顯示方向性結合電路基板81之概略平面 圖於第4圖之方向性結合電路基板81中,於微帶傳輸線 2之連接點X上進行操取,—邊的擷取路徑(第—傳送路 L)則端與探針83A相連接,另一邊的擷取路徑(第二傳 送路徑)前端與探針83B相連接。 具體而言,微帶傳輸線82包括第一、第二、第三微帶 傳輪線 82A、、oorw π _ 82B 82C (第一、第二、第三樣式)。第一 =k路也之第一微帶傳輸線82a,係具有沿著圖中左右方 ° 方向)延伸之傳輸線樣式,it包括位於基板81左 邊之第端MAI、與在其對·面之第二端。第一端82ai 、接於探針83A所傳導的底端(第〆導體之第一底端)。And so, therefore, the incident microwaves transmitted on the first route and the second route are in phase. The detector 86' detects the output incident microwave power through the connection point of the microstrip transmission line 82, and outputs the detection result to the device main body 21 of the microwave generating device. The main unit 21 controls the microwave generating source based on the result of the measurement to make the microwave output generated by the microwave source i stable. Next, a description will be given of the specific structure of the directional bonding circuit substrate 81. 4 is a schematic plan view showing the directional bonding circuit substrate 81 in the directional bonding circuit substrate 81 of FIG. 4, and is operated at the connection point X of the microstrip transmission line 2, and the drawing path of the side (first) The transmission path L) is connected to the probe 83A, and the other end of the extraction path (second transmission path) is connected to the probe 83B. Specifically, the microstrip transmission line 82 includes first, second, and third microstrip transmission lines 82A, and oorw π _ 82B 82C (first, second, and third patterns). The first microstrip transmission line 82a of the first =k path has a transmission line pattern extending along the left-right direction in the figure, and includes a first end MAI on the left side of the substrate 81 and a second end on the opposite side of the substrate 81. end. The first end 82ai is connected to the bottom end of the probe 83A (the first bottom end of the second conductor).

芝〇14-10266-PF 15 200947800 頸似地’第二傳送路徑/ 有沿著圖中左右方向延伸之傳:::帶傳輸線係具 81右侧邊之第三端82B1、與在其並包括位於基板 隨連接於探針83β 底維面之第四端。第三端 端)。 所傅導的底端(第二導體之第二底 :二傳送路徑之第三微帶傳輸線似,係具有沿著圖 “方向(第一方向)延伸之傳輪線樣式,並包括位於Zhifu 14-10266-PF 15 200947800 Neck-like 'second transmission path / has a transmission extending in the left and right direction of the figure::: The third end 82B1 of the right side of the transmission line tie 81 is included with The substrate is located at a fourth end connected to the bottom surface of the probe 83β. Third end)). The bottom end of the derivative (the second bottom of the second conductor: the third microstrip transmission line of the two transmission paths, has a transmission line pattern extending along the direction of the figure (first direction), and includes

1上側邊之第五端82C1、與在其對面之第六端。第 五知8 2C1連接於偵測器。1 is a fifth end 82C1 of the upper side and a sixth end opposite thereto. The fifth knowledge 8 2C1 is connected to the detector.

第一、第二、第三微帶傳輸線82A、82B、82C之第二 端、第四端1六端,係結合㈣板81上之連接點χ。第 一微帶傳輸線82Α,經由料83Α取得微波,並傳送至連 接點X。第二微帶傳輸線82Β,經由探針83Β取得微波,並 傳送至連接點X。第一及第二微帶傳輸線82Α、82β所各自 傳送之微波,將於連接點X進行合成。將合成後之微波傳 送至第二微帶傳輸線82C ’最後由偵測器86輸出。 衰減器85Α、85Β,介於第一及第二微帶傳輸線82Α、 82Β在各自路徑上所設立的傳輸線分段之間,使得各自路 徑上所傳送之微波’僅衰減預先設定後之衰減量。衰減器 85Α係由3個晶片電阻Rll、R12、R13以π字型連接而成, 而衰減器85Β係由3個晶片電阻R21、R22、R23以π字型 連接組成。接地線87配置於微帶傳輸線82Α、82Β旁邊, 因此,衰減器85Α、85Β之晶片電阻R12、R13、R22、R23, 經由接地線87而接地。 2014-10266-PF 16 200947800 如前所述,衰減器85A、85B具有將來自於探針“A、 83B傳送過來的微波功率振幅進行衰減之效果,進—步, 亦具有如下所述之效果。如第4圖所示,在第一、第二、 第:微帶傳輸線82A、82B、82C結合之連接點叉上,:送 路徑之阻抗特性為可變化。關於此點,第一及第二微帶傳 輸線m、82B,與第三微帶傳輸線82C之延伸方向不同, 亦為主要原因。The second end and the fourth end of the first, second, and third microstrip transmission lines 82A, 82B, and 82C are connected to the connection point ( on the (four) board 81. The first microstrip transmission line 82 is taken through the material 83 and transmitted to the connection point X. The second microstrip transmission line 82A receives the microwave via the probe 83 and transmits it to the connection point X. The microwaves respectively transmitted by the first and second microstrip transmission lines 82A, 82β are synthesized at the connection point X. The synthesized microwave is transmitted to the second microstrip transmission line 82C' and finally output by the detector 86. The attenuators 85 Α, 85 Β are interposed between the first and second microstrip transmission lines 82 Α, 82 Β between the transmission line segments established on the respective paths such that the microwaves transmitted on the respective paths attenuate only the preset attenuation amount. The attenuator 85 is formed by connecting three chip resistors R11, R12, and R13 in a π-shape, and the attenuator 85 is composed of three chip resistors R21, R22, and R23 connected in a π-shape. The ground line 87 is disposed beside the microstrip transmission lines 82A and 82B. Therefore, the chip resistors R12, R13, R22, and R23 of the attenuators 85A and 85B are grounded via the ground line 87. 2014-10266-PF 16 200947800 As described above, the attenuators 85A and 85B have the effect of attenuating the amplitude of the microwave power transmitted from the probes "A, 83B", and have the following effects. As shown in FIG. 4, the impedance characteristics of the transmission path are changeable on the connection point of the first, second, and third microstrip transmission lines 82A, 82B, and 82C. In this regard, the first and second The microstrip transmission lines m and 82B are different from the extension direction of the third microstrip transmission line 82C, which is also a main cause.

因此,來自於探針83A、請,在第—及第二微帶傳輸 線82A、82B上傳送之部份微波,將於連接點χ上反射,之 後,再於第一及第二微帶傳輸線82Α、82β上進行傳送,用 返回探針83Α、83Β端。除此之外,返回探針83Α、㈣端 之部份微波,在第一及第二微帶傳輸線 82Α1、第二端82Β1進行反射,用以再一 82Α、82Β之第一端 次地傳送至連接點 ❹ X端。此時,假設於衰減器85Α、8冗不存在之情況下,在 重覆上述之反射後,原來在第一及第二微帶傳輸線82Α、 82Β上傳送之微波,再加上由上述之反射所產生之反射波 導致難以正確地偵測出探針83Α、83Β所取得之微波。 另一方面,於此實施例中,第一及第二微帶傳輸線 82 A 82B的路徑上各自具有衰減器“A、mb之後,則衰 減器85A、85B能夠衰減像這樣來自於反射之反射波。因 此,在偵測器86於連接點χ上偵測微波功率輸出同時,能 夠抑制如上述之反射波造成之影響。 以上為本發明實施例之相關說明,然其並非用以限定 本發明,例如,可參考下述之實施例。Therefore, a part of the microwaves transmitted from the probes 83A, on the first and second microstrip transmission lines 82A, 82B, will be reflected on the connection point, and then on the first and second microstrip transmission lines 82. Transfer on 82β, using the return probes 83Α, 83Β. In addition, a part of the microwaves of the returning probes 83Α and (4) are reflected by the first and second microstrip transmission lines 82Α1 and the second end 82Β1 for transmission to the first end of 82 Α, 82 至 to Connection point ❹ X end. At this time, it is assumed that the microwaves originally transmitted on the first and second microstrip transmission lines 82Α, 82Β, after the above-mentioned reflections are repeated, in the case where the attenuators 85Α, 8 are redundant, plus the reflection by the above The generated reflected waves make it difficult to correctly detect the microwaves obtained by the probes 83, 83. On the other hand, in this embodiment, after the first and second microstrip transmission lines 82 A 82B each have an attenuator "A, mb", the attenuators 85A, 85B can attenuate the reflected waves from the reflection. Therefore, when the detector 86 detects the microwave power output at the connection point, it can suppress the influence of the reflected wave as described above. The above is a description of the embodiments of the present invention, but it is not intended to limit the present invention. For example, reference may be made to the embodiments described below.

2014-10266-PF 17 200947800 於刖述實施例之方向性結合電路基板 …第-傳送路徑、第二傳送路徑各自具有::: 85A、85B,不過,亦可以謓箆 J Μ,、讓第一傳送路徑、第二 徑之任一方具有衰減器。 得送路 進一步,上述具體說明之實施例中,主要包括用 現本發明之下述特徵。 實 .方面’本發明提供一種方向性結合電路基板 括:基板,·第一值译牧’、己 傳送路徑,配置於該基板之上,且 端及第二端;第-值 ,、百第一 一 第—傳迭路徑,配置於該基板之上,且右哲 二端及連接於該第二 /、 端及第-前端,”一:第一導體,包括第-底 -端,該第料接於該第—傳送路徑之該第 體,包括端突出於微波傳遞之導波空間中;第二導 -底端及第二前端,該第二底端連接於 傳送路徑之該第三端,該第二前端沿著微波之傳遞;:― 與該第-前端相隔既定距離,並突出二=遞方向, 幅哀減裝置,用以衰減微波,係被配置”第2中,振 及該第二傳送路徑至少其中之一被^置於該第一傳送路徑 四端之連接點上,以於該第-端及該第 上各自傳遞之微波振 于疋峪瓜 該第二前端間 ,其特徵在於’該第-前端及 傳送路徑之路徑長為L2,兩者之和=體長度之該第-含該第二導體長度 為U+L2’ LHL2與包 ^長度差,係等^ 主為U之該第二傳送路徑之間 長),該距離L1 ;^η_Ό_λ/2 U為整數且λ為微波之波 ”該路!長U之和為L1+L3,與該路徑2014-10266-PF 17 200947800 The directional combination of the circuit board of the embodiment is described. The first transmission path and the second transmission path each have:: 85A, 85B, but may also be ΜJ Μ, let the first One of the transmission path and the second path has an attenuator. Further, in the above-described embodiments, the following features are mainly included in the present invention. The invention provides a directional bonding circuit substrate comprising: a substrate, a first value translation path, a transmission path, and is disposed on the substrate, and the end and the second end; the first value, the hundredth a first-transmission path disposed on the substrate, and the second end of the right and the second end, the first end, and the first end, "one: the first conductor, including the first-bottom end, the first material The first body connected to the first transmission path includes a terminal protruding in the guided wave space of the microwave transmission; a second guiding end portion and a second front end, wherein the second bottom end is connected to the third end of the transmission path, The second front end is transmitted along the microwave;: ― is separated from the first front end by a predetermined distance, and protrudes from the second direction; the amplitude mitigation device is used to attenuate the microwave, and is configured to be "2nd, vibrating and the first At least one of the two transmission paths is disposed at a connection point of the four ends of the first transmission path, so that the microwaves transmitted by the first end and the first end are respectively excited between the second front end of the melon, and the characteristics thereof The path length of the first front end and the transmission path is L2, and the sum of the two = body length The first-contained second conductor has a length U+L2' LHL2 and a packet length difference, and is equal to a length between the second transmission paths of the main U, and the distance L1; ^η_Ό_λ/2 U is an integer and λ is the wave of the microwave. The way! The sum of the long U is L1+L3, and the path

2014-10266-PF 18 200947800 長L2之長度差,係不等於(2η1) Λ /2。 依據此一組成方式,第一及第二傳送路徑上各自傳遞 之微波振幅,於第—及第二傳送路徑之連接點上為一致。 而且’當在導波空間巾傳遞2組互相相反的微波時,於第 -及第二傳送路徑之連接點上,#中—方之微波振幅確實 變為0。因此,確實地能夠只讓另一微波擷取出來。 於前述之組成方式中,該第一前端及該第二前端,最2014-10266-PF 18 200947800 The length difference of length L2 is not equal to (2η1) Λ /2. According to this configuration, the amplitudes of the microwaves transmitted on the first and second transmission paths are identical at the connection points of the first and second transmission paths. Further, when two sets of mutually opposite microwaves are transmitted in the guided wave space towel, the microwave amplitude of #中-square becomes zero at the connection point of the first-and second transfer paths. Therefore, it is indeed possible to take only another microwave. In the foregoing composition mode, the first front end and the second front end are the most

好由第-探針及第二探針之前端組成,該第—探針及該第 二探針配置於與該微波傳遞方向垂直之延伸方向上。依據 此一組成方式’則可以容易地決定第一前端及第二前端之 配置及位置。 於前述之組成方式中,最好更包括電路樣式,配置於 該基板之表面,其中,該電路樣式包括第一樣式、第二樣 式、連接點及第三樣式,該第一樣式組成該第一傳送路徑, 該第二樣式組成該第二傳送路徑,該連接點與對應於該第 ® 一樣式與該第二樣式之該第二端及該第四端相連接,該第 二樣式從該連接點開始,朝微波功率之偵測端延伸,及其 中’將該振幅衰減裝置各自配置於該第一及第二樣式中。 依據此一組成方式,於第一、第二及第三樣式所連接 之連接點上,傳送路徑之阻抗特性為可變化,即使第—及 第二樣式所傳送之微波,在連接點上發生反射之情況下, 亦能夠透過第一及第二樣式各自具有之振幅衰減裝置,將 連接點產生之反射波衰減下來。因此,能夠正確地.摘測出 原本從連接點輸出之微波。 2014-10266-PF 19 200947800 包括第五端及第六端,= 專送路徑,配置於該基板上,係 於該基板上,該第=傳=既定之第一方向延伸’其中, 方向與該第一方向不同,、其向延伸,該第二 路徑沿著第三方向延伸一二“板上,㈣二傳送 -及第二方向不同'二方向與該第二方向或該第 基板之邊上,纟中,ς第第―、第三及第五端位於該 上之既定°" 一、第四及第六端連接於該基板 上<既疋位置,及其中, 第-及第二傳送路徑中。5哀減裝置各自配置於該 根據此一組成方或座 徑之誃第- 儘官於第-、第二及第三傳送路 射二 四及第六端之連接點上會產生微波之反 廉因為振幅衰減裝置會使此一反射波衰減,便可以只取 出應該輸出之微波。 於此If況下,最好更包括接地線,配置於該基板上, 魯 用以作為接地電位,其中,該振幅衰減裝置利用該第一傳 綠路輕及該接地線’以及制該第二傳送路徑及該接地 装’各自將三個晶片電阻形成T字型連接,用以組成衰減 丄°依據此-組成方式,則可以簡單地在基板上組成振幅 哀減裝置。 另方面,本發明提供一種方向性結合器,包括:導 :官’用以傳遞微波;帛一導體路徑,具有第一前端及第 _底端’第二導體路徑’具有第二前端及第二底端,該第 一底端連锋於該第一底端;及振幅衰減裝置,配置於該第 及第二導體路徑至少其中之一,用以於該第一底端及該 20 2〇14-1〇266-Pf 200947800 第二底端之連接點上,使得該第一及第二導體路徑中所各 自傳遞之微波振幅一致,其特徵在於,該第一前端突出於 該導波管内之導波空間中,該第二前端沿著微波之傳遞方 向,與該第一前端相隔既定距離,並突出於該導波空間中, 該第一前端及該第二前端間之距離為L1,該第一導體路徑 之路徑長為L2,兩者之和為L1+L2 , LHL2與路徑長為u 之該第二導體路徑之間的長度差,係等於Un—U又/2,( η _ 為整數且λ為微波之波長),該距離L1與該路徑長L3之 和為L1+L3,與該路徑長l2之長度差,係不等於 (2η-1)λ /2 。 依據此一組成方式,第一及第二傳送路徑上各自傳遞 之微波振幅,於第一及第二導體路徑之連接點上為一致。 因此,當沿著I波管較長之方向傳遞2组互相減的微波 時,於第一及第二導體路徑之連接點上,其中一方之微波 振幅確實變為0。因此,確實地能夠只讓另一微波擷取出 ❹ 來。 於前述之組成方式中,最好更包括基板,至少支撐該 第-及第二導體路徑之該第一及第二底端,與該振幅衰減 裝置。 此外,該第一前端及該第二前端,最好由第一探針及 第二探針之前端組成,該第一探針及該第二探針配置於與 該微波傳遞方向垂直之延伸方向上,且其中,將第一及第 二探針突出於該導波管内,用以於該導波管之側面形成第 一結合孔及第二結合孔。依據此一組成方式,則可以容易 2014-10266-PF 21 200947800 地決定第一前端及第二前端之配置及位置。 於此情況下’最好更包括電路樣式,配置於該基板之 表面,其中,該電路樣式包括第一樣式、第二樣式、一連 接點及第三樣式,該第一樣式至少組成該第一導體路徑之 一部份,該第二樣式至少组成該第二傳送路徑之—部份, 該連接點與對應於該第一樣式與該第二樣式之該第一底端 及該第二底端相連接,該第三樣式從該連接點開始,朝微 φ 波功率之偵測端延伸,及其中,將該振幅衰減裝置各自配 置於該第一及第二樣式中。 另一方面,本發明提供一種電漿產生裝置,包括:微 波產生裝置,用以產生微波;電衆產生單元,接收該微波 產生裝置所產生之該微波,並利用該微波之能量產生電 漿;前述之方向結結合器,將該導波管配置於該微波產生 裝置及該電漿產生單元間之導波路徑中,用以取得傳遞於 該導波管中之部份微波之功率;及偵測器,偵測由該方向 ©‘&結合器所取得之功率,並將㈣結果輸出至該微波產生 裝置,其中,該微波產生裝置根據該偵測器所輸出之該偵 測結果’控制本身所產生之微波輸出。 於上述之電漿產生裝置中,當沿著導波管較長之方向 傳遞2組互相相反的入射微波及反射微波時,於第一及第 二導體路徑之連接點上,反射微波振幅確實變為〇,確實 地能夠只讓入射微波操取出來。由於能夠不受反射微波影 響’偵測出之入射埤波之功率,因此,能夠根據偵測結果 控制微波之輪出,達到輪出穩定之目的。Preferably, the first probe and the second probe are arranged at a front end, and the first probe and the second probe are disposed in a direction perpendicular to the direction in which the microwave is transmitted. According to this composition method, the arrangement and position of the first front end and the second front end can be easily determined. In the foregoing composition, it is preferable to further include a circuit pattern disposed on a surface of the substrate, wherein the circuit pattern includes a first pattern, a second pattern, a connection point, and a third pattern, wherein the first pattern constitutes the a first transfer path, the second pattern constituting the second transfer path, the connection point being connected to the second end and the fourth end corresponding to the second pattern and the second pattern, the second pattern being The connection point begins to extend toward the detection end of the microwave power, and wherein the amplitude attenuating means are each disposed in the first and second patterns. According to this composition mode, the impedance characteristics of the transmission path are changeable at the connection points to which the first, second and third patterns are connected, even if the microwaves transmitted by the first and second patterns are reflected at the connection point In this case, the reflected wave generated at the connection point can also be attenuated by the amplitude attenuating means provided in each of the first and second patterns. Therefore, the microwave originally outputted from the connection point can be accurately extracted. 2014-10266-PF 19 200947800 includes a fifth end and a sixth end, = a dedicated path, disposed on the substrate, on the substrate, the first pass = a predetermined first direction extending 'where, the direction and the The first direction is different, and the second path extends along the third direction by one or two "boards, (four) two transmissions - and the second direction is different" two directions and the second direction or the side of the first substrate , the middle, the third, the fifth and the fifth end are located at the predetermined °" the first, fourth and sixth ends are connected to the substrate < the position, and the first and second In the transmission path, the 5 mitigation devices are respectively arranged on the connection point of the second and sixth ends of the first, second and third transmission paths according to the first or second trajectory The anti-corrosion of the microwave is because the amplitude attenuation device attenuates the reflected wave, so that only the microwave that should be output can be taken out. In this case, it is preferable to further include a grounding wire, which is disposed on the substrate and used as a ground potential. Wherein the amplitude attenuating device utilizes the first green light path and the ground line 'And the second transmission path and the grounding device' respectively form a T-shaped connection of the three wafer resistors to form an attenuation 依据. According to this composition mode, the amplitude mitigation device can be simply formed on the substrate. In another aspect, the present invention provides a directional bonder comprising: a guide: a relay for transmitting microwaves; a conductor path having a first front end and a _ bottom end 'second conductor path' having a second front end and a second a bottom end of the first bottom end of the first bottom end; and an amplitude attenuating device disposed at least one of the first and second conductor paths for the first bottom end and the second bottom end -1〇266-Pf 200947800 The connection point of the second bottom end is such that the amplitudes of the microwaves transmitted in the first and second conductor paths are identical, and the first front end protrudes from the guide in the waveguide In the wave space, the second front end is spaced apart from the first front end by a predetermined distance along the direction of the microwave, and protrudes from the guided wave space, and the distance between the first front end and the second front end is L1. Long path of a conductor path L2, the sum of the two is L1+L2, the length difference between LHL2 and the second conductor path with path length u is equal to Un-U and /2, (η_ is an integer and λ is the wavelength of the microwave) The sum of the distance L1 and the path length L3 is L1+L3, which is different from the length of the path length l2, and is not equal to (2η-1)λ /2. According to this composition mode, the first and second transmission paths The microwave amplitudes transmitted on the respective ones are identical at the connection points of the first and second conductor paths. Therefore, when two sets of mutually subtracted microwaves are transmitted along the longer direction of the I-wave tube, the first and second conductors are At the connection point of the path, the microwave amplitude of one of the paths does become 0. Therefore, it is possible to surely remove only one of the microwaves. In the above-described composition, it is preferable to further include a substrate to support at least the first and The first and second bottom ends of the second conductor path and the amplitude attenuating means. In addition, the first front end and the second front end are preferably composed of a first probe and a second probe front end, and the first probe and the second probe are disposed in a direction perpendicular to the microwave transmission direction. And the first and second probes protrude from the waveguide, and the first bonding hole and the second bonding hole are formed on the side of the waveguide. According to this composition, the configuration and position of the first front end and the second front end can be easily determined from 2014-10266-PF 21 200947800. In this case, it is preferable to further include a circuit pattern disposed on a surface of the substrate, wherein the circuit pattern includes a first pattern, a second pattern, a connection point, and a third pattern, the first pattern at least constituting the a portion of the first conductor path, the second pattern forming at least a portion of the second transmission path, the connection point and the first bottom end corresponding to the first pattern and the second pattern and the first The bottom ends are connected to each other, and the third pattern extends from the connection point toward the detection end of the micro-φ wave power, and wherein the amplitude attenuation devices are respectively disposed in the first and second patterns. In another aspect, the present invention provides a plasma generating apparatus comprising: a microwave generating device for generating a microwave; a battery generating unit receiving the microwave generated by the microwave generating device and generating a plasma by using the energy of the microwave; The directional junction combiner is disposed in a waveguide path between the microwave generating device and the plasma generating unit for obtaining power of a part of the microwave transmitted in the waveguide; and detecting a detector that detects the power obtained by the direction of the ''& combiner and outputs the result of (4) to the microwave generating device, wherein the microwave generating device controls the detection result according to the detector The microwave output produced by itself. In the above plasma generating apparatus, when two sets of mutually opposite incident microwaves and reflected microwaves are transmitted along the longer direction of the waveguide, the reflected microwave amplitude is surely changed at the connection point of the first and second conductor paths. Fortunately, it is indeed possible to operate only the incident microwave. Since the power of the detected incident chopping wave can be detected without being reflected by the reflected microwave, the rotation of the microwave can be controlled according to the detection result to achieve the purpose of stable rotation.

2014-10266-PF 22 200947800 根據上述之說明,本發明所提供之小型方向性結合電 路基板及其方向性結合器 \ -,,^ ^ 夂罨漿產生裝置,能夠很精 確地擷取出導波管所傳遞之微波。 本發明之方向性結合電路基板及其方向性結合器,以 L電!產生裝置’適用於針對半導體晶圓等半導體基板的 =處理裝置及成膜裝置、針對《顯示面板 φ 理#要^處理裝置、針對醫療設備等的滅菌處 理裝置、蛋白質分解裝置等。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明’任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作各種之更動與潤飾,因 範圍當視㈣〇料㈣圍所界定者為準。 …蔓 【圖式簡單說明】 第1圖係顯示依據本發明實施例之電聚產生裝置整體 結構之部份側視圖。 第2圖係顯示依據本發明實施例之方向性結合器之妹 構透視圖》 '° 第3圖係用以說明方向性結合器用導波管及方向性結 合電路基板。 ^ 第4圖係顯示方向性結合電路基板之概略平面圖。 【主要元件符號說明】 pu〜電漿產生襞置 11〜第一導波管; 111穿孔; 10〜方向性結合器; 11ϋ、12U〜上面板 12〜第二導波管;2014-10266-PF 22 200947800 According to the above description, the small directional combined circuit substrate provided by the present invention and the directional coupler thereof are capable of accurately extracting the waveguide The microwaves that are delivered. The directional combination of the circuit board and the directional coupler of the present invention is applied to a processing device and a film forming device for a semiconductor substrate such as a semiconductor wafer, and is processed for a display panel. A device, a sterilization treatment device for medical equipment, and the like, a protein decomposition device, and the like. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention to those skilled in the art, and various changes and modifications may be made without departing from the spirit and scope of the invention. The person defined in (4) Dividend (4) is subject to the definition. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial side elevational view showing the entire structure of an electropolymer generating apparatus according to an embodiment of the present invention. Fig. 2 is a perspective view showing a sister of a directional coupler according to an embodiment of the present invention. Fig. 3 is a view showing a waveguide for a directional bonder and a directional joint circuit substrate. ^ Fig. 4 is a schematic plan view showing a directional bonding circuit substrate. [Description of main component symbols] pu~ plasma generation device 11~first waveguide; 111 perforation; 10~ directional bond; 11ϋ, 12U~ upper panel 12~second waveguide;

2014-10266-PF 23 200947800 13B〜下面板; 21〜裝置主體; 30〜電漿產生單元; 32〜導體; 42〜反射塊; 60〜虛擬負載; 13〜第三導波管; 20〜微波產生裝置; 22~微波發送天線; 31~電漿產生喷嘴; 40〜滑動式短路器; 50〜循環器; 70〜細部調節器(stub tuner); 71〜管段;2014-10266-PF 23 200947800 13B~lower panel; 21~device body; 30~plasma generating unit; 32~conductor; 42~reflecting block; 60~virtual load; 13~third waveguide; 20~microwave generation Device; 22~ microwave transmitting antenna; 31~ plasma generating nozzle; 40~ sliding short circuiter; 50~ circulator; 70~ stub tuner; 71~ pipe segment;

70A、70B、700細部調節器單元; 80~方向性結合器用導波管; 81〜方向性結合電路基板; 82、82A、82B、82C〜微帶傳輸線; 83A、83B〜探針; 84A、84B〜結合孔; 85A、85B〜衰減器; 86~偵測器 8 7〜接地線;70A, 70B, 700 detail adjuster unit; 80~ directional coupler waveguide; 81~ directional combined circuit board; 82, 82A, 82B, 82C~ microstrip transmission line; 83A, 83B~ probe; 84A, 84B ~ combined hole; 85A, 85B ~ attenuator; 86 ~ detector 8 7 ~ ground line;

Rll、R12、R13、R21、R22、R23〜晶片電阻;及 PI、P3〜前端。 2014-10266-PF 24Rll, R12, R13, R21, R22, R23~ chip resistance; and PI, P3~ front end. 2014-10266-PF 24

Claims (1)

200947800 七、申請專利範圍: 1 * 一種方向杻 基板; 第一傳送路徑, 1^、结合電路基板,包括: 配置於該基板之上,具有第一端及第 端; 迗路徑,配置於該基板 ,、有第三端及連 接於該第二端之第四端; ❹200947800 VII. Patent application scope: 1 * A direction 杻 substrate; a first transmission path, 1^, combined circuit substrate, comprising: disposed on the substrate, having a first end and a first end; a 迗 path disposed on the substrate , having a third end and a fourth end connected to the second end; 第一導體,包#笛 ^ ^ 地 括第一底端及第一前端,該第 接於該第一傳送路^第底鈿連 傳遞之導波空間中; 耵鸲犬出於微波 導體’包括第二底端及第二前端 接於該第二傳送路 ▲第—底知連 傳搋 W第二端,該第二剛端沿著微波之 得遞万向,盘贫笙 ^ ^ L 一第-心相隔既定距離’並突出於該導波 工間中,及 振幅衰減裝置’用以衰減微波,係被配置於該第一傳 送路徑及該第二傳送路徑至少其中之―,用以於該第二端 及該第四端之連接點上,使得該[傳送轉及該第二傳 送路徑上各自傳遞之微波振幅_致, 其特徵在於,該第一前端及該第二前端間之距離為 L1,包含該第一導體長度之該第一傳送路徑之路徑長為 L2,兩者之和為U+L2,L1+L2與包含該第二導體長度且路 徑長為L3之該第二傳送路徑之間的長度差,係等於 (211-1)又/2(11為整數且;1為微波之波長), 該距離L1與該路徑長L3之和為L1+L3,與該路徑長 2014-1Q266-PF 25 200947800 L2之長度差’係不等於(2η_ι)λ/2。 2. 如申請專利範圍第1項所述之方向性結合電路基 板,其中,該第一前端及該第二前端,係由第一探針及第 二探針之前端所組成,該第一探針及該第二探針配置於與 該微波傳遞方向垂直之延伸方向上。 3. 如申請專利範圍帛項所述之方向性結合電路 基板,更包括: _ 電路樣式,配置於該基板之表面, 其中,該電路樣式包括第一樣式、第二樣式、連接點 及第二樣式,該第一樣式組成該第一傳送路徑,該第二樣 式組成該第二傳送路徑,該連接點與對應於該第—樣式與 該第二樣式之該第二端及該第四端相連接,該第三樣式從 該連接點開始,朝微波功率之偵測端延伸, 將該振幅衰減裝置各自配置於該第一及第二樣式中。 4. 如申請專利範圍第丨或2項所述之方向性結合電路 ❹ 基板,更包括: 第三傳送路徑,配置於該基板上,係包括第五端及第 六端,沿著既定之第一方向延伸, 其中於該基板上’該第一傳送路徑沿著第二方向延 伸,該第二方向與該第一方向不同, 一於該基板上’該第二傳送路徑沿著第三方向延伸,該 第一方向與該第二方向或該第一及第二方向不同, 該第、第二及第五端位於該基板,之邊上, 該第二、帛㈤及第六端連接於該基板上之既定位置, 2014-10266-PF 26 200947800 以及 將該振幅衰減裝置各自配置於該第—及第:傳 中〇 5·如申請專利範圍第4項所述之方向性結合電路基 板,更包括: 接地線,配置於該基板上,用以作為接地電位,The first conductor, the package # 笛 ^ ^ includes a first bottom end and a first front end, the first connection is connected to the guided space of the first transmission path and the second transmission; the dog is included in the microwave conductor The second bottom end and the second front end are connected to the second end of the second transmission path ▲ 底 底 连 , , , , , , , , , , 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着 沿着- the heart is separated by a predetermined distance 'and protrudes in the waveguide booth, and the amplitude attenuating means 'is attenuated for the microwave, and is disposed at least in the first transmission path and the second transmission path" for a connection point between the second end and the fourth end, such that the microwave amplitude of each of the [transfer and the second transmission path is transmitted, wherein the distance between the first front end and the second front end is L1, the path length of the first transmission path including the length of the first conductor is L2, the sum of the two is U+L2, L1+L2 and the second transmission path including the length of the second conductor and having a path length L3 The difference between the lengths is equal to (211-1) and /2 (11 is an integer and 1 is the wavelength of the microwave), With the path length from L1 and L3 is the sum L1 + L3, the length of the path length difference 2014-1Q266-PF 25 200947800 L2 of the 'system is not equal to (2η_ι) λ / 2. 2. The directional bonding circuit substrate according to claim 1, wherein the first front end and the second front end are composed of a first probe and a front end of the second probe, the first probe The needle and the second probe are disposed in an extending direction perpendicular to the microwave transmission direction. 3. The directional combination of the circuit substrate as described in the scope of the patent application, further comprising: a circuit pattern disposed on a surface of the substrate, wherein the circuit pattern comprises a first pattern, a second pattern, a connection point, and a a second pattern, the first pattern constituting the first transport path, the second pattern constituting the second transport path, the connection point and the second end and the fourth corresponding to the first pattern and the second pattern The end phase is connected, and the third pattern starts from the connection point and extends toward the detecting end of the microwave power, and the amplitude attenuating devices are respectively disposed in the first and second patterns. 4. The directional bonding circuit 基板 substrate according to claim 2 or 2, further comprising: a third transmission path disposed on the substrate, comprising a fifth end and a sixth end, along the predetermined Extending in a direction, wherein the first transport path extends along the second direction, the second direction is different from the first direction, and the second transport path extends along the third direction on the substrate The first direction is different from the second direction or the first and second directions, the first, second, and fifth ends are located on the side of the substrate, and the second, fifth, and sixth ends are connected to the a predetermined position on the substrate, 2014-10266-PF 26 200947800, and the amplitude attenuating device are respectively disposed in the first and the third pass: 方向5, as described in claim 4, the directional combination circuit substrate, The method includes: a grounding wire disposed on the substrate for use as a ground potential, 其中,該振幅衰減裝置利用該第—傳送路徑及該接地 線’以及利用該第二傳送路徑及該接地線,各自將三個晶 片電阻形成π字型連接’用以組成衰減器。 6. —種方向性結合器,包括: 導波管,用以傳遞微波; 第一導體路徑,具有第一前端及第一底端; 該第二底 第二導體路徑,具有第二前端及第二底端, 端連接於該第一底端;及 振1哀減裝置,用以衣減微波,係被配置於該第一及 第二導體路徑至少其中之-,用以於該第—底端及該第二 底端之連接點上,使得該第一及第二導體路徑中所各自傳 遞之微波振幅一致, 其特徵在於,該第一前端突出於該導波管内之導波空 間中, 該第二前端沿著微波之傳遞方向’與該第一前端相隔 既定距離,並突出於該導波空間中, 該第一前端及該第二前端間之距離為L1,該第一導體 路徑之路控長為L2,兩者之和為L1+L2,LI +L2與路徑長 2014-10266-PF 27 200947800 為L3之該第二導體路徑之間的長度差,係等於(2nd)几/2 (π為整數且;1為微波之波長),以及 該距離L1與該路徑長L3之和為L1+L3,與該路徑長 L2之長度差,係不等於(h—i) λ /2。 7·如申請專利範圍第6項所述之方向性結合器,更包 括: 基板’至少支撐該第一及第二導體路徑之該第一及第 二底端,與該振幅衰減裝置。 8·如申請專利範圍第7項所述之方向性結合器,其 中,該第一前端及該第二前端,係由第一探針及第二探針 之前端所組成’該[探針及該第二探針配置於與該微波 傳遞方向垂直之延伸方向上,以及將第—及第二探針突出 於該導波管内’用以於該導波管之側面形成第_結合孔及 第二結合孔。 ❹ 9.如申請專利範圍第7或8項所述之方向性結合器, 更包括: 電路樣式,配置於該基板之表面, 其中,該電路樣式包括第一樣式、第二樣式、連接點 及第三樣式’該第-樣式至少組成該第—導體路徑之一部 份,該第二樣式至少組成該第二傳送路徑之一部份,該連 接點與對應於該第—樣式與該第二樣式之該第—底端及該 第-底端相連接,該笼-4笨_L、 項第二樣式從該連接點開始,朝微波功 率之偵測端延伸,以及 將該振中田衰減裝置各自配置於該第—及第:樣 < 卜 2014-10266-PF 28 200947800 ίο. —種電漿產生裝置,包括: 微波產生裝置,用以產生微波; 電漿產生單元,接收該微波產生裝置所彥生之該微 波,並利用該微波之能量產生電漿; 如申請專利範圍第6項到第9項中任一項所述之方向 性結合器,將該導波管配置於該微波產生裝置及該電漿產The amplitude attenuating device uses the first transmission path and the ground line ', and uses the second transmission path and the ground line to form a π-shaped connection ′ for each of the three wafer resistors to constitute an attenuator. 6. A directional coupler comprising: a waveguide for transmitting microwaves; a first conductor path having a first front end and a first bottom end; the second bottom second conductor path having a second front end and a bottom end, the end is connected to the first bottom end; and the vibration 1 mitigation device is configured to reduce the microwave, and is disposed at least in the first and second conductor paths for the first bottom a connection point between the end and the second bottom end, such that the amplitudes of the microwaves transmitted in the first and second conductor paths are identical, wherein the first front end protrudes from the guided wave space in the waveguide; The second front end is spaced apart from the first front end by a predetermined distance along the direction of the microwave transmission, and protrudes from the guided wave space. The distance between the first front end and the second front end is L1, and the first conductive path is The length of the road control is L2, the sum of the two is L1+L2, LI + L2 and the path length 2014-10266-PF 27 200947800 are the length difference between the second conductor paths of L3, which is equal to (2nd) several/2 (π is an integer and 1 is the wavelength of the microwave), and the distance L1 and the Diameter Length L3 is the sum of L1 + L3, the path length difference between the length L2, the system is not equal to (h-i) λ / 2. 7. The directional bonder of claim 6, further comprising: the substrate 'supporting at least the first and second bottom ends of the first and second conductor paths, and the amplitude attenuating means. 8. The directional coupler of claim 7, wherein the first front end and the second front end are formed by a front end of the first probe and the second probe. The second probe is disposed in an extending direction perpendicular to the microwave transmitting direction, and protrudes the first and second probes in the waveguide tube to form a first _ coupling hole and a side of the waveguide Two combined holes. The directional bonder of claim 7 or 8, further comprising: a circuit pattern disposed on a surface of the substrate, wherein the circuit pattern includes a first pattern, a second pattern, and a connection point And the third pattern 'the first pattern constituting at least one portion of the first conductor path, the second pattern forming at least one portion of the second transmission path, the connection point corresponding to the first pattern and the first The first-bottom end of the second pattern is connected to the first-bottom end, and the second pattern of the cage-4 stupid_L, the item starts from the connection point, extends toward the detecting end of the microwave power, and attenuates the vibrating field The device is respectively configured in the first and the first sample: a plasma generating device, comprising: a microwave generating device for generating microwaves; a plasma generating unit receiving the microwave generating device And the directional bonder according to any one of claims 6 to 9, wherein the waveguide is disposed in the microwave Generating device and the electricity Pulp production 生單元間之導波路徑中,用以取得傳遞於該導波管中之部 份微波之功率;及 器所取得之功率,並將 俄測器’偵測由該方向性結合 偵測結果輸出至該微波產生裝置, 測器所輪出之 其特徵在於,該微波產生裝置根據該偵 該偵測結果,控制本身所產生之微波輸出。In the guided wave path between the cells, the power of the microwaves transmitted to the waveguide is obtained; and the power obtained by the device is detected, and the detector is detected by the directional combined detection result. To the microwave generating device, the detector is characterized in that the microwave generating device controls the microwave output generated by itself according to the detection result. 2014-10266-PF 292014-10266-PF 29
TW98101334A 2008-01-15 2009-01-15 Directional coupler circuit board, directional coupler, and plasma producing apparatus TW200947800A (en)

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US2566020A (en) * 1945-01-04 1951-08-28 Willard H Fenn High-frequency detecting device
FR2108858B1 (en) * 1970-10-13 1973-11-23 Thomson Csf
JPS5588405A (en) * 1978-12-26 1980-07-04 Tdk Corp Directional coupler
DE3715318A1 (en) * 1987-05-08 1988-11-24 Licentia Gmbh Waveguide output element
JP2986166B2 (en) * 1989-01-30 1999-12-06 株式会社ダイヘン Apparatus and method for automatically adjusting impedance of microwave circuit
JPH06132710A (en) * 1992-10-15 1994-05-13 Micro Denshi Kk Directional coupler
JP3107757B2 (en) * 1996-10-22 2000-11-13 株式会社ニッシン Automatic tuning method of microwave circuit
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