TW200945600A - Element for organic thin film solar cell and method of manufacture - Google Patents

Abstract

This disclosure provides an element of an organic thin film solar cell and method for making the same. The element comprises an organic semiconductor thin film layer with a rough surface, which can be used as a P-type semiconductor layer or N-type semiconductor layer, thereby forming a rough morphology between the p-type layer and the n-type layer.

Description

200945600 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an organic thin film solar cell, and more particularly to a donor layer or receptor layer element of an organic thin film solar cell and a method of fabricating the same. [Prior Art] Solar cells are an ideal renewable energy source for converting solar energy directly into electric current. Single crystal germanium and polycrystalline germanium solar cells are still the mainstream of the market. However, the biggest problem facing the Shixi wafer solar cell is the problem of too high material cost. In the purification process of polycrystalline germanium raw materials, a large-scale plant requires a large amount of energy, so the cost is high; in addition, due to the limitation of physical properties, the current solar cell fabricated by germanium wafers currently has a thickness of at least 200 μm, so a large area is manufactured. The amount of raw materials used in power generation modules is also relatively large. Thin-film solar cells save material (less than 90% thicker than silicon wafers) and can be manufactured on inexpensive glass, plastic or non-ferrous steel substrates. In general, a single-layer organic thin film solar cell includes an organic polymer located between two electrodes, the organic material absorbing light and correspondingly generating excitons ((10)itGn) in such a single layer structure Medium light current is small. S reveals a two-layer structure. The j-A diagram-two-layer structure organic 200945600 solar cell 100 schematic diagram, a transparent conductive (ITO) layer 1 〇 2 on a substrate 1 可 1 can be used as an anode, the IT 〇 layer 1 〇 2 The hole transport layer 103' and the hole transport layer 1〇3 and a cathode 1〇6 form a double layer structure of the donor layer 104 and the acceptor layer 105, and the electron/hole pair is applied to the donor layer 104 and the acceptor layer. The separation of the layers 1〇5 junction produces electron and hole transmission. Figure 1 is a schematic cross-sectional view of the donor layer 1〇4 and the receptor layer 1〇5 in this two-layer structure. It can be found from the first diagram that the interface between the donor layer 1〇4 and the receptor layer 1〇5 More flat. In order to increase the effective contact area between the donor layer and the acceptor layer, the industry proposes a blending structure (Hierojunction). The second figure illustrates a cross-sectional view of a blended structure organic solar cell 200, wherein the substrate 2〇1, the IT layer 202, The hole transport layer 2〇3, and the cathode 206 are similar to the first one, except that there is a donor-acceptor layer 2〇4 in the blend structure. 2 is a schematic cross-sectional view of the donor-acceptor layer 204 for this blended structure A. It can be found from the second graph that the contact area between the donor layer and the acceptor layer in the blended structure is increased, and The current density produced by the junction. However, the morphology of such a blended structure is unstable, and in some conditions, such as illumination and high temperature, the phase knives are prone to occur, and the life of the device is greatly reduced. In addition, the morphology of the blended structure is highly correlated with the solvent used for coating, and during the formation of the blended structure, the formed morphology cannot be effectively controlled, and the efficiency of the organic solar device is affected. In short, although the blend structure increases the junction area of the donor layer and the acceptor layer of the organic thin film solar cell, its morphology is not stable and the junction area formed is not easily controlled. Therefore, a technique is needed to increase the junction area of the body layer and the receptor layer of the application layer 200945600, and it is possible to control the junction surface formed each time to have a similar topography. SUMMARY OF THE INVENTION In order to effectively increase the junction area between the donor layer and the acceptor layer and to make the junctions have similar topography, a semiconductor film having a rough surface is disclosed in the aspect of the invention. The surface has an improved crude sugar content. Φ Another aspect of the invention discloses a method for fabricating a semiconductor film having a rough surface by adding a solid substance to a coating liquid of a semiconductor film forming a donor layer or an acceptor layer, and forming the semiconductor film. The solid material is removed in the step to form a semiconductor film having a rough surface. Another aspect of the invention utilizes a heating step to sublimate the solid matter' thereby removing the solid material. In a further aspect of the invention, a method of forming a donor layer/receptor layer 7C is provided. According to the method, a solid substance may be added to a coating liquid which forms one of the donor layer or one of the receptor layers, and the solid substance is removed in the step of forming the semiconductor layer, A semiconductor layer having a rough sugar surface is formed, and then another semiconductor layer is coated thereon to obtain a donor layer/acceptor layer member having a larger donor layer/acceptor layer junction area. In still another aspect of the invention, the solid material is removed by heating to thereby remove the solid matter. In another aspect of the invention, the semiconductor structure is annealed during formation of the semiconductor device. 200945600 In the aspect of the invention, a method for manufacturing an organic thin film solar cell is disclosed, which method comprises at least forming a donor layer/acceptor layer component formed on the organic thin film solar cell. a solid substance is added to a coating liquid of one of the donor layer or one of the receptor layers, and the solid matter f is removed in the step of forming the semiconductor layer to form a semiconductor layer having a thick chain surface, and then In addition, a semiconductor layer is coated thereon,

The donor layer/acceptor layer member of the organic thin film solar cell has a larger donor layer and acceptor layer junction area. In an embodiment of the invention, the substrate used to fabricate an organic thin film solar cell may comprise glass, metal, or plastic. In another aspect of the invention, the donor layer/acceptor layer element is annealed during formation of the donor layer/acceptor layer element. In summary, it is an advantage of the present invention to provide a semiconductor film having an improved rough surface and a method of fabricating the same. Compared to the prior art, the semiconductor film of the present invention has a large surface roughness. Further, the semiconductor thin medium obtained by controlling the solid matter added during the manufacturing process has a similar morphology. Therefore, when the semiconductor film of the present invention is used to fabricate a donor layer or a receptor layer of a donor layer/acceptor layer device, the donor layer and the receptor layer interface of the obtained donor layer/acceptor layer member can be elevated and controlled. area. 13⁄4 itq spleen cut-off projectile/receptor layer component is used to manufacture an organic thin film solar energy material, the donor layer of the thin film solar cell and the receptor layer are formed - a rough surface having a similar junction area, The junction area of the cross-section 增加 increases, which in turn increases the current of the organic thin film solar cell. 8 200945600 [Embodiment] In general, the present invention is characterized in that a solid substance is added to at least a coating liquid containing a semiconductor material; a coating liquid is applied on an interface; and a semiconductor film is formed. The solid matter is removed by sublimation to obtain a semiconductor film having a rough surface. So far, there are two main methods for producing micropores (micr〇p〇r〇us) in polymer films, so as to achieve the principle of phase separation of two incompatible polymers. After phase separation, one of the macromolecules is cleaved by heat decomposition, radiation decomposition or hydrolysis to form a film having microporosity, and the other method is to form a different shape by using a block copolymer (Block C〇P〇lymer). The illuminating lamp), together with the decomposition of one of the polymers by heat decomposition, radiation decomposition or hydrolysis, forms a film having micropores. All of the above methods involve the problem of molecular chain scission and the complete removal of impurities, and are not suitable for application in semiconductor polymers. Therefore, the phase separation and sublimation method developed by the present invention does not destroy the characteristics of the semiconductor polymer, and completely removes the added solid substance to meet the purity requirement of the application. The solid substance mentioned in the present invention must be soluble in the coating liquid to form a uniform solution, and the solid substance gradually precipitates and solidifies during the process of volatilization of the solvent in the coating liquid after coating, and thus coating The semiconductor material in the liquid forms a phase-separated structure, and then the solid substance is removed by heating to obtain a semiconductor film having a rough surface. Therefore, the solid substance of the present invention must have solubility so as to be uniformly dissolved in the coating. Liquid order, in addition, 200945600 must have sublimability so that it can be completely removed from the semiconductor film by sublimation, and must be incompatible with the semiconductor material to form a phase-separated structure. The advantage of using a solid material is that it is easy to control its size and morphology during phase separation, and once the phase separated structure is formed, it will not change. The removal of the solid matter is mainly carried out by sublimation, and can be carried out in a normal pressure or a reduced pressure depending on the solvent to be used, the solid substance, and the semiconductor material, for example, the temperature at which the solid substance is generally removed. Will be selected under the glass transition temperature of the semiconductor material, so if the sublimation temperature of the solid material is higher than the glass transition temperature of the semiconductor material, then it is a good choice to remove the solid material in a decompressed environment. . The advantage of using sublimation is that it avoids morphological changes or destruction of phase separation when removing solids. In the phase-separated structure, the size and distribution of the solid phase and the semiconductor phase are very important, and the choice of the solvent in the coating liquid, the ratio of the solid type φ substance to the semiconductor material, and the selection and solidification of the solid substance can be utilized. The concentration of the substance in the coating liquid, the coating method, the coating temperature, and the sublimation temperature of the solid material are controlled, so that the effect of roughening the surface of the semiconductor film can be achieved, and the donor layer can be improved. The contact area between the acceptor layers and the object of the invention for controlling the surface morphology of the semiconductor film. The above described objects, features, and advantages of the present invention will be more apparent from the following description. Coating 200945600 Referring to Figure 3, a schematic diagram of a method of forming a semiconductor film having a rough surface in accordance with an embodiment of the present invention is illustrated. In the present embodiment, poly(3-hexylthiophene) P3HT is used as a material for forming the donor layer. P3HT was dissolved in toluene (lgP3HT in 99 g of toluene) to form a toluene solution. Next, camphor powder particles 3g 3 03 are added to the toluene solution, and the camphor powder particles are herein referred to as the solid matter of the present invention. The toluene solution in which the camphor powder is dissolved is applied to a substrate 301 by spin coating, and the amount of the toluene solution coated is one to a thickness of about 200 nm on the interface surface after the toluene solvent is removed. Film coating 302. At the end of the spin coating, most of the benzene is removed by high-speed rotation to form a dry film coating 302, and then the dry film coating 302 is placed in an oven and heated to 120 ° C under a nitrogen atmosphere to make the coating. The camphor 303 sublimates to form a P3HT donor layer 304, which in the coating leaves a void due to sublimation due to precipitation and phase separation, thereby forming a thick chain surface in the donor layer. Figure 4 illustrates an Atomic Force Microscope cross-sectional analysis of a P3HT donor layer 400 having a roughened surface formed in accordance with this embodiment. As can be seen from Fig. 4, the surface roughness of the P3HT donor layer 400 having a rough surface can be up to ±100 nm. In another embodiment of the present invention, a [6,6]phenyl C61-butyric acid methyl ester ([6,6]-phenyl C61-butyric acid methyl ester) is coated on the P3HT donor layer having a rough surface. , PCBM) Receptor layer with a film thickness of 1000 (l〇·10 m) to obtain a modified P3HT/PCBM component. 11 200945600 In yet another embodiment of the invention, the modified P3HT/PCBM component is processed in an annealing step and compared to prior art blended P3HT/PCBM components. Referring to Figure 5, the current density of the P3HT/PCBM components obtained by different manufacturing methods at different voltages is illustrated. The four components shown in the figure are: component A1, P3HT/PCBM component of the prior art double-layer structure and have not been annealed; component A2, P3HT/PCBM component of the prior art double-layer structure and annealed; component B1, The rough surface P3HT/PCBM element of the present invention is not annealed; and the element B2, the rough surface P3HT/PCBM element of the present invention is annealed.

It can be seen from Fig. 5 that the current density of the unit cross-sectional area of the prior art p3HT/pCBM elements A1 and A2 is less than 1 mA/cm2; however, the current density of the improved P3HT/PCBM element B1 according to the present invention is 4.78 mA/cm2. 'B2 is 6.24 mA/cm2, which is superior to the prior art P3HT/PCBM components A1 and A2. In addition, Table 1 further clarifies the characteristics of the above four components. © Table -

Jsc(mA/cm2) V〇c(volts) PCE(°/〇) Component A1 See the technical components / unannealed 0.69 0.57 0.08 Component A2 See the technical components / annealed 0.10 0.05 0.03 Component B1 Modified P3HT/PCBM Component / 4.78 0.50 1.15 12 200945600 Unannealed Component B2 Modified P3HT/PCBM Component / Annealed 6.24 0.55 1.68 In one embodiment of the invention, a method of fabricating an organic thin film solar cell 600 is disclosed. Referring to Figure 6, there is illustrated a schematic cross-sectional view of an organic solar cell 600 in accordance with the present invention. According to the present embodiment, an indium tin oxide film is formed on a glass substrate 601 as an ITO φ layer 602 and it can serve as an anode, and a hole transport layer 603 is formed on the ITO layer 602, and the hole is formed in the hole. The coating layer 603 is coated with a coating liquid, the coating liquid comprises at least a P3HT donor layer material and a benzene solvent, and a solid substance camphor; the coating liquid is coated on a hole transport layer 603; The camphor is removed in the step of shaping the P3HT donor layer 604 to form a P3HT donor layer 604 having a rough surface; and then a PCBM receptor layer material is coated thereon to obtain a PCBM receptor layer 605; A cathode 606 is formed on the PCBM receptor layer 605. Finally, a zero-film solar cell 600 is obtained by a packaging step, wherein the donor layer/acceptor layer component of the organic thin film solar cell 600 has a larger donor layer and is subjected to Body junction area. According to another embodiment of the present invention, a solid substance may be added to the coating liquid in the receptor layer coating liquid, and a receptor layer having a rough surface may be obtained by a method similar to that of the above embodiment. In addition, according to still another embodiment of the present invention, a 13 200945600 bulk coating liquid can be applied to the receptor layer having a rough surface by a method similar to the above embodiment to obtain a modified donor layer. /Receptor layer components. Similarly, in accordance with another embodiment of the present invention, an organic thin film solar cell 600 can be fabricated using such improved donor layer/acceptor layer components. According to another embodiment of the invention, an annealing treatment is performed during the formation of the donor layer/acceptor layer member. The donor layer material of the present invention may be a conjugated polymer including, but not limited to, polythiophene derivatives such as P3HT, poly-phenylenevinylene derivatives such as poly[ 2-methoxy, 5-(30,70-dimethyl-octyl)]-p-phenylene vinyl (poly[2-methoxy,5-(30,70-dimethyl-octyloxy)] - p -phenylene-vinylene, MDM0-PPV), and polyfluorene derivatives such as poly(9,9'-dioctyl-bis-N,N'-(4-butylphenyl)-bis-N, N'-phenyl-1,4-phenylene-diamine) (poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N,-phenyl -l,4 - phenylene-diamine &gt; PFB)). The receptor layer material of the present invention may be a conjugated polymer including, but not limited to, fullerene derivatives such as [6,6]phenyl C61 butyric acid methyl ester ([6,6] -phenyl C61-butyric acid methyl ester, PCBM), and perylene derivatives. According to an embodiment of the present invention, the coating liquid solvent may be an aromatic hydrocarbon, a paraffin or an ether solvent, including but not limited to: stupid, indole, p-terphenyl, di-benzene, tri-benzene, and Methyl chloride, trioxane, and tetrahydrofuran. The solid materials of the present invention include, but are not limited to, camphor 200945600 and its derivatives, naphthalene and its derivatives, anthra and its derivatives, in accordance with embodiments of the present invention, utilized Sublimation method to remove the solid substance. In the embodiment of the invention, the substrate used to fabricate an organic thin film solar cell includes, but is not limited to, glass, metal, and plastic. It will be apparent from the above-described preferred embodiments of the present invention that a semiconductor film having a rough surface can be obtained by applying the present invention. When the thin layer is applied to a donor layer/acceptor layer element, a modified rough surface can be formed on the donor layer and the receptor layer to increase the contact area therebetween, and Controlling the added solid material results in a rough surface with similar morphology. In addition, the donor layer/acceptor layer member of the present invention can generate a higher current due to an increased junction area of the donor layer and the acceptor layer. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of protection of the invention is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Organic solar cell; Figure 1B is a schematic cross-sectional view illustrating the two-layer structure of the donor layer and the acceptor layer; 15 200945600 Figure 2A is a schematic cross-sectional view illustrating a blended structure of an organic solar cell; Figure 2B is a section Schematic diagram illustrating a donor-acceptor layer of a blend structure; FIG. 3 is a schematic view illustrating a method of forming a semiconductor thin film having a rough surface according to an embodiment of the present invention; and FIG. 4 is a cross-sectional view illustrating According to an embodiment of the present invention, a surface thickness of a semiconductor film having a rough surface is formed; and FIG. 5 is a diagram illustrating a current density of a P3HT/PCBM device obtained by different manufacturing methods at different voltages; Figure 6 is a schematic cross-sectional view showing an organic thin film solar cell having a larger donor layer/acceptor layer interface area according to the present invention. . [Description of main component symbols] 100: Double-layer structure organic film Sun 101, 201, 301, 601: Substrate Energy battery 10 102, 202, 602: Transparent guide

104: donor layer 106, 206: cathode 204: donor-acceptor layer 302: toluene solution coating 304, 400, 604: P3HT layer 605: PCBM receptor layer, 103, 203, 603: hole transport layer 105 205 : Receptor layer 200 : Blend structure organic thin film solar cell 303 : camphor donor body 600 : organic thin film solar cell 16 of the invention 200945600 component A1 : prior art double layer structural component A2 : P3HT / previously technical double layer structure PCBM component and P3HT/PCBM component not processed and subjected to annealing treatment Fire treatment component B1: Rough surface component B2 of the present invention: rough surface P3HT/PCBM component of the present invention and without surface P3HT/PCBM component Annealing treatment fire treatment reference 17

Claims (1)

200945600 X. Patent application scope · · Organic thin film solar cell semiconductor film, characterized by ', having a rough wheel surface, which is added by a coating liquid in a coating liquid containing at least one organic semiconductor material After the coating liquid is applied to the interface, the solvent in the coating liquid is removed, and the solid substance is sublimated. ❹ 2. The organic thin film solar cell semiconductor film according to claim 1, wherein the semiconductor material used is a total of a polymer. 3. The organic thin film solar cell according to claim 2, wherein the common polymer is a polythiophene derivative, a phenylvinyl derivative, a polyfluorene derivative, and a rich film. The olefinic derivative, or the 芘❿ 4 sleeve, such as the towel, may be used in the organic thin film solar cell derivative medium described in the above paragraph (4), wherein the polythiophene derivative used is poly 3. hexyl porphin (four) such as / please The organic thin film solar cell of the invention of claim 3, wherein the polyphenylene derivative used in the invention is poly(n-, 5-(30,70-dimethyl-octyl)] - Pair of phenylene vinyl derivatives. 6. The organic thin film solar cell 18 200945600 semiconductor film according to claim 3, wherein the poly||derivative used in the crucible is poly(99,_bis_N,N'_(4-butylphenyl) _ Double _N, N' _ stupyl-, 4-extension-based-diamine) derivatives. 7. The patented third semiconductor film, wherein the butyric acid ruthenium is used. The organic thin film solar cell described in the article is a [6,6]phenyl (10) The organic thin film solar cell semiconductor film according to claim 1, wherein the solvent used is benzene, toluene, p-dimethylbenzene, tri-benzene, tri-methane or tetra-nitrogen. 9. The solid film solar cell semiconductor film as described in claim 1, wherein the solid substance is a rod brain and its naphthalene and its derivatives or anthracene and a derivative thereof. , 10. A method of forming an organic thin film solar energy, the method comprising: at least: a battery semiconductor structure providing a coating liquid, which is at least coated with a material; comprising a semiconductor material, a solvent, and a solid coating coating on the interface In addition to the solvent; and sublimation of the solid material. 19 200945600 π. 如 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The formation of the organic film according to item 10 is such that the semiconductor material is formed into an organic film as described in the conjugate 11 item, wherein the conjugated polymer is a polythiophene, a poly derivative, or a fullerene derivative 12' Patented method of solar cell structure of a solar cell, Derivative, phenylethyl street organism, or anthraquinone derivative. 13. A method for the semiconductor structure of a solar cell according to the patent scope of the invention. The method for forming an organic thin film according to the item 12, wherein the polythiophene derivative is a poly(III)-[14], and the method for forming an organic thin film solar 3b battery semiconductor structure according to claim 12, wherein the poly-bending base B The dilute derivative Φ is a poly[2.methoxy group, a 5-(3〇,70-didecyl-octyl)]-p-extended ethylene derivative. The method for forming a semiconductor structure of an organic thin film solar cell according to claim 12, wherein the polyfluorene derivative is poly(9,9,-one-octet-double_n, n'_(4_) Butylphenyl V bis-N,N, phenylphenyl phenylene diamine) derivative. 16 · Formation of organic thin film as described in claim 12 of the patent scope 20 200945600 cation battery semiconductor structure method phenyl C61 Butyric acid sulphate. The keele-dilute derivative is [6, stone] i /·, as described in the T 洧 patent 干 第 第 之 形 阳 电池 电池 电池 电池 电池 电池 电池 电池 电池 半导体 半导体 半导体 半导体In the semi-conductive Y step, the semiconductor structure is annealed. 18. The method of the semiconductor structure of the solar cell of the patent application range is xylene, dichlorobenzene, tri-benzene, The organic film formed by the item 10 is in which the solvent is benzene, toluene, p-trichloromethane or tetrahydrofuran. A method of forming an organic thin film solar cell semiconductor structure according to claim 10, wherein the solid substance may be camphor and its derivatives, naphthalene and its derivatives or hydrazine and derivatives thereof. The method of forming an organic thin-film solar cell semiconductor structure as described in the 1G patent of the '2 patent range, wherein the step of sublimating the solid substance is by heating. A method for manufacturing an organic thin film solar cell, the method comprising: providing a substrate; forming a transparent conductive layer on the substrate; forming a hole transport layer on the transparent conductive layer; 21 200945600 forming a donor layer on The method includes at least: providing a coating liquid comprising at least a semiconductor material, a solvent, and a solid substance coating; coating the coating liquid on the hole transport layer; In addition to the solvent; and sublimating the solid material; - forming an acceptor layer on the donor layer; and Φ forming a cathode on the acceptor layer. The method of claim 21, wherein the substrate is glass, metal, or plastic. 23. The method of claim 21, wherein the transparent conductive layer is a metal oxide layer. The method of claim 23, wherein the metal emulsion layer is a film of indium tin oxide. 25. The method of claim 21, wherein the semiconductor material is a co-host polymer. 26. The method of claim 25, wherein the co-polymer is a polynomole derivative, a polyphenylene derivative, a polythene derivative, a olefin derivative, or a hydrazine derivative. Things. 22 200945600 〜27. The method of claim 26, wherein the sigh is a poly-3-hexyl decenophene derivative. The method of claim 26, wherein the polyethylene derivative is poly[2_methoxy, 5_(3〇, 7〇 dimethyl_xin-burning-pair-extension) The method of claim 26, wherein the polyfluorene derivative is poly(9,9, dioctyl-bis-N,N,-(4-butyryl) The method of claim 26, wherein the fullerene derivative is [6, 6). The method of claim 26, wherein the fullerene derivative is [6, 6] The method of claim 21, wherein the solvent of the donor layer is selected from the group consisting of benzene, toluene, para-xylene, dioxane, tri-benzene, The method of claim 21, wherein the solid substance is camphor and its derivatives, naphthalene and its derivatives or hydrazine and its derivatives. 33. As claimed in claim 21, the step of the type of material is by heating. Solid 23 200945600 The method described in paragraph 21, the method further comprises the step of the battery In the annealing treatment of the donor 34. The first patent application in the range of manufacturing the organic thin film solar layer / acceptor layer of the cell element method, at least the method of fabricating an organic thin film solar 35.- comprising: Providing a substrate; forming a transparent conductive layer on the substrate; forming a hole transport layer on the transparent conductive layer; forming a cathode; forming an acceptor layer on the cathode, the method comprising at least: providing a coating a liquid comprising at least a semiconductor material, a solvent and a solid substance coated; coating the coating liquid on the cathode; removing the solvent; and sublimating the solid substance; and forming a donor layer at the receiving The body layer and the layer of the hole passing through the wheel. The method of claim 35, wherein the substrate is glass, metal, or plastic. The method of claim 35, wherein the transparent conductive layer is a metal oxide layer. The method of claim 37, wherein the metal oxide layer is a film of indium tin oxide. 39. The method of claim 35, wherein the semiconductor material is a conjugated polymer. 4. The method of claim 39, wherein the co-roller polymer is a polythiophene derivative, a polyphenylene vinyl derivative, a burial derivative, a fullerene derivative, or a hydrazine derivative. Things. The method of claim 40, wherein the polyphenylene derivative is a poly-3-hexylthiophene derivative. 42. The method of claim 4, wherein the poly(ethylene) derivative is poly[2-decyloxy, 5-(30,70-dimethyl-octyl)] _ p-Phenylethylene derivative. 43. The method of claim 40, wherein the poly-derivative is poly(9,9'-dioctyl_double_&gt;7,&gt;1'-(4-butylphenyl) _ double_team^_phenyl-1,4-phenylene-diamine) derivative. 44. The method of claim 4, wherein the fullerene derivative is a [6,6] stupid C61 butyric acid methyl ester derivative. The method of claim 35, wherein the donor layer solvent is selected from the group consisting of stupid, toluene, p-xylene, dioxane, trichlorobenzene, tri-methane, and tetrahydrofuran. group. Material. The method of claim 35, wherein the solid material is camphor and its derivatives, naphthalene and its materials or strontium, and a method thereof derived from the bismuth (4), which is more inclusive/receptive : in the step of Hi4 film solar cell, annealing the application 26