TW200943353A - Low pull-in voltage RF-MEMS switch and method for preparing the same - Google Patents

Low pull-in voltage RF-MEMS switch and method for preparing the same

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Publication number
TW200943353A
TW200943353A TW97147981A TW97147981A TW200943353A TW 200943353 A TW200943353 A TW 200943353A TW 97147981 A TW97147981 A TW 97147981A TW 97147981 A TW97147981 A TW 97147981A TW 200943353 A TW200943353 A TW 200943353A
Authority
TW
Taiwan
Prior art keywords
mems switch
present
preparing
voltage
same
Prior art date
Application number
TW97147981A
Other languages
Chinese (zh)
Other versions
TWI384518B (en
Inventor
Pei-Zen Chang
Yi-Jie Chen
Wen-Pin Shih
Original Assignee
Pei-Zen Chang
Yi-Jie Chen
Wen-Pin Shih
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pei-Zen Chang, Yi-Jie Chen, Wen-Pin Shih filed Critical Pei-Zen Chang
Priority to TW97147981A priority Critical patent/TWI384518B/en
Publication of TW200943353A publication Critical patent/TW200943353A/en
Application granted granted Critical
Publication of TWI384518B publication Critical patent/TWI384518B/en

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Abstract

The present invention discloses an RF-MEMS switch and the method for preparing the same, wherein the RF-MEMS switch comprises a substrate, a lower electrode, and an upper electrode. The upper electrode contains a fixed portion, a static electric board, two cantilever beams, and a torsion beam. The cantilever beams can transit into the "unstable state" more easily than the cantilever beams of a conventional RF-MEMS switch, with the help from the torsion beam of the upper electrode of the RF-MEMS switch in the present invention. As a result, the pull-in voltage of the RF-MEMS switch can be effectively reduced, besides the contact area between upper and lower electrode can be increased. . Moreover, since the manufacturing process of the RF-MEMS switch having a torsion beam of the present invention is simple, the RF-MEMS switch of the present invention can be integrated into a high frequency circuit.
TW97147981A 2008-04-15 2008-12-10 Low pull-in voltage rf-mems switch and method for preparing the same TWI384518B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW97147981A TWI384518B (en) 2008-04-15 2008-12-10 Low pull-in voltage rf-mems switch and method for preparing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW97113567 2008-04-15
TW97147981A TWI384518B (en) 2008-04-15 2008-12-10 Low pull-in voltage rf-mems switch and method for preparing the same

Publications (2)

Publication Number Publication Date
TW200943353A true TW200943353A (en) 2009-10-16
TWI384518B TWI384518B (en) 2013-02-01

Family

ID=44868996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97147981A TWI384518B (en) 2008-04-15 2008-12-10 Low pull-in voltage rf-mems switch and method for preparing the same

Country Status (1)

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TW (1) TWI384518B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485969B (en) * 2011-03-16 2015-05-21 Toshiba Kk Electrostatic Actuator
CN115031831A (en) * 2022-06-20 2022-09-09 清华大学 Acoustic resonance switch device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753582B2 (en) * 2002-08-14 2004-06-22 Intel Corporation Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485969B (en) * 2011-03-16 2015-05-21 Toshiba Kk Electrostatic Actuator
CN115031831A (en) * 2022-06-20 2022-09-09 清华大学 Acoustic resonance switch device
CN115031831B (en) * 2022-06-20 2023-04-07 清华大学 Acoustic resonance switch device

Also Published As

Publication number Publication date
TWI384518B (en) 2013-02-01

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MM4A Annulment or lapse of patent due to non-payment of fees