TW200943353A - Low pull-in voltage RF-MEMS switch and method for preparing the same - Google Patents
Low pull-in voltage RF-MEMS switch and method for preparing the sameInfo
- Publication number
- TW200943353A TW200943353A TW97147981A TW97147981A TW200943353A TW 200943353 A TW200943353 A TW 200943353A TW 97147981 A TW97147981 A TW 97147981A TW 97147981 A TW97147981 A TW 97147981A TW 200943353 A TW200943353 A TW 200943353A
- Authority
- TW
- Taiwan
- Prior art keywords
- mems switch
- present
- preparing
- voltage
- same
- Prior art date
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Abstract
The present invention discloses an RF-MEMS switch and the method for preparing the same, wherein the RF-MEMS switch comprises a substrate, a lower electrode, and an upper electrode. The upper electrode contains a fixed portion, a static electric board, two cantilever beams, and a torsion beam. The cantilever beams can transit into the "unstable state" more easily than the cantilever beams of a conventional RF-MEMS switch, with the help from the torsion beam of the upper electrode of the RF-MEMS switch in the present invention. As a result, the pull-in voltage of the RF-MEMS switch can be effectively reduced, besides the contact area between upper and lower electrode can be increased. . Moreover, since the manufacturing process of the RF-MEMS switch having a torsion beam of the present invention is simple, the RF-MEMS switch of the present invention can be integrated into a high frequency circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97147981A TWI384518B (en) | 2008-04-15 | 2008-12-10 | Low pull-in voltage rf-mems switch and method for preparing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97113567 | 2008-04-15 | ||
TW97147981A TWI384518B (en) | 2008-04-15 | 2008-12-10 | Low pull-in voltage rf-mems switch and method for preparing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200943353A true TW200943353A (en) | 2009-10-16 |
TWI384518B TWI384518B (en) | 2013-02-01 |
Family
ID=44868996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW97147981A TWI384518B (en) | 2008-04-15 | 2008-12-10 | Low pull-in voltage rf-mems switch and method for preparing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI384518B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI485969B (en) * | 2011-03-16 | 2015-05-21 | Toshiba Kk | Electrostatic Actuator |
CN115031831A (en) * | 2022-06-20 | 2022-09-09 | 清华大学 | Acoustic resonance switch device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6753582B2 (en) * | 2002-08-14 | 2004-06-22 | Intel Corporation | Buckling beam bi-stable microelectromechanical switch using electro-thermal actuation |
-
2008
- 2008-12-10 TW TW97147981A patent/TWI384518B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI485969B (en) * | 2011-03-16 | 2015-05-21 | Toshiba Kk | Electrostatic Actuator |
CN115031831A (en) * | 2022-06-20 | 2022-09-09 | 清华大学 | Acoustic resonance switch device |
CN115031831B (en) * | 2022-06-20 | 2023-04-07 | 清华大学 | Acoustic resonance switch device |
Also Published As
Publication number | Publication date |
---|---|
TWI384518B (en) | 2013-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |