TW200941931A - Class AB operation amplifier circuit - Google Patents

Class AB operation amplifier circuit Download PDF

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TW200941931A
TW200941931A TW97110809A TW97110809A TW200941931A TW 200941931 A TW200941931 A TW 200941931A TW 97110809 A TW97110809 A TW 97110809A TW 97110809 A TW97110809 A TW 97110809A TW 200941931 A TW200941931 A TW 200941931A
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coupled
class
differential pressure
resistance
type
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TW97110809A
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TWI359561B (en
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Cheng-Lin Shiu
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Novatek Microelectronics Corp
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Abstract

The class AB operation amplifiers are often used to amplify the power of the signal in the integrated circuit. However, it is not easy that the output current from the traditional class AB operation amplifier can achieve the limitations of the elements themselves. A class AB operation amplifier is provided. A voltage regulator is used to regulate the class AB operation amplifier. Thus, there can be the most swing range in the gates of the class AB operation amplifier. By this way, the class AB amplifier can provide the most output current as possible.

Description

200941931 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種AB類運算放大器電路,且特別 是有關於一種增強驅動能力的AB類運算放大器電路。 【先前技術】 AB 類運算放大器(class AB operation amplifier)在積體 Q 電路設計中扮演著相當重要的角色,其廣泛的應用在高傳 真的立體音響設備(high-fidelity stereo equipment)、微電腦 及其他電子設備。AB類運算放大器的功用為增加輸出信 號功率’以驅動負載或者下一級電路。 圖1繪示為傳統AB類運算放大器1〇〇之電路圖。請 參考圖1,此傳統AB類運算放大器100包括輸入級11〇、 偏壓電路120及互補式輸出級130,而互補式輸出級13〇 更外接負载140。其中,輸入級110包括N型場效電晶體 I11-1與Ul~2、P型場效電晶體111-3與111-4以及電流 源141-1、141_2。偏壓電路12〇包括P型場效電晶體121-1、 21 2 N型場效電晶體121-3、131_4以及浮動式電流源 122-1、122-2。互補式輸出級13〇包括p型場效電晶體 以及N型場效電晶體131-2。 在圖1的輸入級110中,N型場效電晶體lllq鱼 111 -2 、p 刑语从带 θ π* m, , ___200941931 IX. Description of the Invention: [Technical Field] The present invention relates to a class AB operational amplifier circuit, and more particularly to a class AB operational amplifier circuit with enhanced drive capability. [Prior Art] Class AB operational amplifiers play an important role in the design of integrated Q circuits. They are widely used in high-fidelity stereo equipment, microcomputers and others. Electronic equipment. The function of the class AB operational amplifier is to increase the output signal power to drive the load or the next stage of the circuit. FIG. 1 is a circuit diagram of a conventional class AB operational amplifier. Referring to FIG. 1, the conventional class AB operational amplifier 100 includes an input stage 11A, a bias circuit 120, and a complementary output stage 130, and a complementary output stage 13 is further connected to the load 140. The input stage 110 includes N-type field effect transistors I11-1 and U1~2, P-type field effect transistors 111-3 and 111-4, and current sources 141-1, 141_2. The bias circuit 12A includes P-type field effect transistors 121-1, 21 2 N field effect transistors 121-3, 131_4, and floating current sources 122-1, 122-2. The complementary output stage 13A includes a p-type field effect transistor and an N-type field effect transistor 131-2. In the input stage 110 of FIG. 1, the N-type field effect transistor lllq fish 111 -2 , p the criminal language from the band θ π * m, , ___

130所輪出的輸出信號V〇 , ’形成一個回授電路。 、12卜2各自形成差動輪入 :輸入信號Vi ’更接收輪出 200941931090 26563twf.doc/p 當互補式輸出級130需要提供大電流給負載140時, 此AB類運算放大器100會利用偏壓電路⑽中的偏壓點 Va ’使得P㈣效電晶體13:M的源極與閘級有較大的壓 差’進而提供較大的電流給負載14〇。當互補式輸出級13〇 需要自負載140抽回較大的電流時,此AB類運算放大器 100會利用偏壓電路120中的偏壓點Vb,使得場效電 晶體1儿2的源極與閘級有較大的壓差,進而自負載_ ❹抽回較大的電流。 、 此架構因Va Vb較難拉至全壓,因此p型場效電晶體 BM較難達到本身所能提供給負載刚的最大輸出電 流,而N型場效電晶體131_2也較難達到本身所能自負載 140抽回的最大電流,所以傳統AB類運算放大器議的 驅動能力有限。 【發明内容】 ^本發明之範例提出一種ΑΒ類運算放大器電路,主要 =利用個壓差調整器來調控其互補式輸出級,使得其互 補式輸出級能夠輸出較大的電流給外接的負載,或者自外 接的負載抽回較大的電流。 々本發明之範例提出一種ΑΒ類運算放大器電路,其具 有第與第二端,第一端用以接收第一電壓,第二端用以 輸出第二電壓,此ΛΒ類運算放大器電路包括第一差動輪 入對、偏壓電路以及互補式輸出級。其中,第一差動輸入 子輕接於第一與第二端,具有第三與第四端。偏壓電路’ 2〇〇94l931m 26563twf.doc/p 编接於第一差動輸入對,白一 出級,福接於偏愿電路,勺括 s周整盗。互補式輸 N型電晶體,第-l括被此串接的第一 P型與第一 π L楚,接於第一P型與第—N型電晶體之 =間了二Git整器祕於第三端與互補式輸出級 決定一第一盘楚」兩/用以根據第一與第二電壓的大小來 二與第二4’而第三與第四端分別用以輸出第 攄電路用以接收第一與第二電流,並根 ❷據第-與弟二電流產生第一壓差於第一壓差調整器。 本發明因加入第—壓差調整器於偏壓電路,並於 f差調整H產生第1差’此第—壓差可來調控互補式輸 出級的輸出電流大小’與傳統的AB類運算放大器相比, 本發明範例所提供的AB類運算放大器可以輸出較大的電 流給其外接的負載,或者自其外接的負載抽回較大的電流。 為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉實施例’並配合所附圖式,作詳細說明如下。 【實施方式】 圖2A為依據本發明實施例之AB類運算放大器200A 的電路圖。請參考圖2A,此AB類運算放大器200A包括 輸入級110、偏壓電路12〇以及互補式輸出級130。其中, 輸入級110包括N型場效電晶體111-1、111-2以及電流源 Ml-l。偏壓電路丨2〇包括p型場效電晶體12M、121-2、 N型場效電晶體ι21_3、131_4、浮動式電流源122-1、122-2 以及壓差調整器]23-1。互補式輸出級130包括P型場效 200941931.090 26563t\vf.doc/p 電晶體131-1以及N型場效電晶體131-2。其中,壓差調 整器123-1可以是阻值調變器。 請繼續參照圖2A,在輸入級11〇中,N型場效電晶 體111-1、111-2構成差動輸入對,N型場效電晶體111-1、 111-2的閘極分別接收輸入信號vi與輸出信號v〇,n型場 效電晶體111-1、111-2的源極耦接至電流源141-1,電流 源14M的另一端接地。n型場效電晶體111_1、π 1-2的 A 汲極更輸出電流II、12。 ❹ 在偏壓電路120中,P型場效電晶體ι21-1與i21_2 構成P型電流鏡’ P型場效電晶體121-1與121-2的源極 皆耦接至電源端VDD,P型場效電晶體與121_2的 閘級搞接至P型場效電晶體121-1的汲極,p型場效電晶 體121-1的汲極耦接至浮動式電流源122-1的輸入端與N 型場效電晶體11]-1的沒極,p型場效電晶體121_2的沒極 耦接阻值調變器123-1的其中一端(接點^^”與N型場效 電晶體111-2的汲極。阻值調變器123-1的另一端(偏壓點 G Va)輕接至互補式輸出級130與浮動式電流源122-2的輸入 端。 N型場效電晶體121-3與131-4構成N型電流鏡,N 型場效電晶體121-3與131-4構成N型電流鏡的源極搞接 至接地,N型場效電晶體121_3與131 的間極输至N型場效電晶體12心 晶體121_3的汲極更耦接至浮動式電流源122-1的輸出 端’而N型場效電晶體m_4的沒極輕接至互補式輸出級 200941931 …一一,090 26563twf.d〇c/p 130與浮動式電流源122_2的輸出端(偏壓點Vb)。 在互補式輸出級130中,則是由P型場效電晶體131-1 以及N型場效電晶體131-2串接成AB類放大器。P型場 效電晶體131-1麵接至電源端VDD,N型場效電晶禮131-2 的源極耦接至接地。P型場效電晶體13M與^^型場效電 日曰體131-2的〉及極彼此搞接並輸出輸出信號v〇。互補式輸 出級耦接於外接的負載140,負載14〇的其中一端接收輸 ❹ 出佗號V〇,負載140的另一端為接地。p型場效電晶體 131-1的閘極耗接至偏壓點Va ’ N型場效電晶體131-2的 閘極耦接至偏壓點Vb。 AB類運算放大器20〇a之整體操作敘述如下,輸入級 11〇在接收輸入信號Vi及輸出信號ν〇後送出電流n、12, 若輸出信號Vo小於輸入信號Vi時,則電流12小於電流 II,反之亦然。接著,阻值調變器會根據n、12的電流調 整阻值的大小,且其中一端(偏壓點va)的電壓可控制互補 式輸出級130中P型場效電晶體13M的電流輸出大小。 當電流12小於電流II時(即輸出信號v〇小於輸入信 ,Vi),阻值調變器的電阻值變大。藉此,阻值調變 裔123-1兩端的電壓差亦隨著增加,使得偏壓點的電壓 值可以掉到較低的電壓值,理想上可降至最低電壓,如此 來,P型場效黾晶體131-1的源極與閘極的電壓差可達 到最大,能迅速提供給負載140的最大電流。 此外,輸入級110亦可耦接至偏壓電路12〇的^^型電 流鏡’如圖2B所示。圖2B為依據本發明實施例之AB類 200941931090 26563twf.doc/p ^异放大器2刪的電路圖。AB類運算放大器2_包括 輸入級110、偏壓電路12〇、互補式輸出級13〇以及負載 140。其中’輸人級UG包括p型場效電晶體"η、⑴_4 二,源141士偏壓電路12G包括p型場效電晶體121小 _2、N型場效電晶體⑵小叫、轉式電流源122小 =2以及壓差調整器123_2。互補式輸出級i3Q包括The output signal V 〇 , which is rotated by 130, forms a feedback circuit. 12b 2 each form a differential wheel: input signal Vi 'more receiving rounds 200941931090 26563twf.doc / p When the complementary output stage 130 needs to provide a large current to the load 140, the class AB operational amplifier 100 will utilize the bias voltage The bias point Va' in the path (10) is such that the source of the P(tetra) effect transistor 13:M has a large differential voltage with the gate stage, which in turn provides a larger current to the load 14 〇. When the complementary output stage 13〇 needs to draw back a large current from the load 140, the class AB operational amplifier 100 utilizes the bias point Vb in the bias circuit 120 to make the source of the field effect transistor 2 There is a large differential pressure with the gate, which in turn draws a large current from the load _ 。. Because the Va Vb is difficult to pull to full voltage, the p-type field effect transistor BM is difficult to reach the maximum output current that can be supplied to the load, and the N-type field effect transistor 131_2 is also difficult to reach its own. The maximum current that can be drawn back from the load 140, so the traditional AB class operational amplifier has limited driving capability. SUMMARY OF THE INVENTION An example of the present invention provides a ΑΒ-type operational amplifier circuit, which mainly uses a differential pressure regulator to regulate its complementary output stage so that its complementary output stage can output a large current to an external load. Or draw back a large current from the external load. An example of the present invention provides a ΑΒ-type operational amplifier circuit having a first end, a first end for receiving a first voltage, and a second end for outputting a second voltage, the 运算-type operational amplifier circuit including the first Differential wheel input, bias circuit and complementary output stage. The first differential input is lightly connected to the first and second ends, and has third and fourth ends. The bias circuit '2〇〇94l931m 26563twf.doc/p is programmed in the first differential input pair, and the white one is out of class, and the blessing is connected to the biasing circuit. The complementary N-type transistor, the first-type P-type and the first π-L are connected to the first P-type and the N-th type transistor, and the second Git is connected to the second Pit Determining a first disc at the third end and the complementary output stage. The second and fourth ends are respectively used to output the second circuit according to the magnitudes of the first and second voltages. The first differential current is used to receive the first and second currents, and the first differential pressure is generated according to the first and second currents. The invention adds a first differential pressure regulator to the bias circuit, and adjusts H at the f difference to generate a first difference 'this first pressure difference can adjust the output current magnitude of the complementary output stage' and the conventional AB type operation Compared with the amplifier, the class AB operational amplifier provided by the example of the present invention can output a larger current to its external load or withdraw a larger current from its external load. The above described features and advantages of the present invention will be more apparent from the following description of the appended claims. [Embodiment] FIG. 2A is a circuit diagram of a class AB operational amplifier 200A according to an embodiment of the present invention. Referring to FIG. 2A, the class AB operational amplifier 200A includes an input stage 110, a bias circuit 12A, and a complementary output stage 130. The input stage 110 includes N-type field effect transistors 111-1, 111-2 and a current source M1-1. The bias circuit 丨2〇 includes p-type field effect transistors 12M, 121-2, N-type field effect transistors ι21_3, 131_4, floating current sources 122-1, 122-2, and differential pressure regulators] 23-1 . Complementary output stage 130 includes a P-type field effect 200941931.090 26563t\vf.doc/p transistor 131-1 and an N-type field effect transistor 131-2. The differential pressure regulator 123-1 may be a resistance modulator. Referring to FIG. 2A, in the input stage 11A, the N-type field effect transistors 111-1, 111-2 constitute a differential input pair, and the gates of the N-type field effect transistors 111-1, 111-2 are respectively received. The input signal vi and the output signal v〇, the source of the n-type field effect transistors 111-1, 111-2 are coupled to the current source 141-1, and the other end of the current source 14M is grounded. The N-type field effect transistors 111_1 and π 1-2 have more output currents II and 12. ❹ In the bias circuit 120, the P-type field effect transistors ι21-1 and i21_2 form a P-type current mirror. The sources of the P-type field effect transistors 121-1 and 121-2 are all coupled to the power supply terminal VDD. The P-type field effect transistor and the gate of the 121_2 are connected to the drain of the P-type field effect transistor 121-1, and the drain of the p-type field effect transistor 121-1 is coupled to the floating current source 122-1. The input end is connected to the N-type field effect transistor 11]-1, and the end of the p-type field effect transistor 121_2 is coupled to one end of the resistance value modulator 123-1 (contact ^^" and the N-type field The drain of the effect transistor 111-2. The other end of the resistance modulator 123-1 (bias point G Va ) is lightly connected to the input terminal of the complementary output stage 130 and the floating current source 122-2. The field effect transistors 121-3 and 131-4 constitute an N-type current mirror, and the N-type field effect transistors 121-3 and 131-4 constitute the source of the N-type current mirror to be grounded, and the N-type field effect transistor 121_3 The drain of the N-type field effect transistor 12 core crystal 121_3 is further coupled to the output terminal of the floating current source 122-1, and the N-type field effect transistor m_4 is connected to the complement of the N-type field effect transistor m_4. Output stage 200941931 ... one by one, 090 26563twf.d〇c/p 130 and floating The output terminal (bias point Vb) of the current source 122_2. In the complementary output stage 130, the P-type field effect transistor 131-1 and the N-type field effect transistor 131-2 are connected in series to form a class AB amplifier. The P-type field effect transistor 131-1 is connected to the power supply terminal VDD, and the source of the N-type field effect transistor 111-2 is coupled to the ground. The P-type field effect transistor 13M and the ^^ field effect electricity day The body and the poles of the body 131-2 are connected to each other and output an output signal v. The complementary output stage is coupled to the external load 140, and one end of the load 14〇 receives the output port V〇, and the other end of the load 140 For grounding, the gate of the p-type field effect transistor 131-1 is drained to the bias point Va'. The gate of the N-type field effect transistor 131-2 is coupled to the bias point Vb. Class AB operational amplifier 20〇a The overall operation is as follows. The input stage 11 送 sends the currents n and 12 after receiving the input signal Vi and the output signal ν , and if the output signal Vo is smaller than the input signal Vi, the current 12 is smaller than the current II, and vice versa. The resistance modulator adjusts the magnitude of the resistance according to the current of n and 12, and the voltage of one end (bias point va) can control the P-type field in the complementary output stage 130. The current output of the effect transistor 13M. When the current 12 is less than the current II (ie, the output signal v〇 is smaller than the input signal, Vi), the resistance value of the resistance modulator becomes larger. Thus, the resistance variable 123- The voltage difference across the 1 also increases, so that the voltage value of the bias point can fall to a lower voltage value, ideally to the lowest voltage, so that the source of the P-type field effect crystal 131-1 The gate voltage difference can be maximized and the maximum current that can be quickly supplied to the load 140. In addition, the input stage 110 can also be coupled to the type of current mirror of the bias circuit 12A as shown in FIG. 2B. FIG. 2B is a circuit diagram of the class AB 200941931090 26563 twf.doc/p omni-amplifier 2 according to an embodiment of the invention. The class AB operational amplifier 2_ includes an input stage 110, a bias circuit 12A, a complementary output stage 13A, and a load 140. The 'input level UG includes p-type field effect transistor" η, (1) _4 2, the source 141 士 bias circuit 12G includes p-type field effect transistor 121 small _2, N-type field effect transistor (2) nick, The rotary current source 122 is small = 2 and the differential pressure regulator 123_2. Complementary output stage i3Q includes

O 體叫以及N型場效電晶體鮮其中,壓 差調正器123-2可以是阻值調變器。 ^續^圖2Β ’在輸人級U0中,ρ型場效電晶體 動輪人對,Ρ型場效電晶體⑴·3、111·4 =別=入信號Vi與輸出信號ν〇,ρ型場效電 = m3、lu_4的源_接至電流源⑷_2,電流源⑷_2 2另-立而接至電源端VDDOP型場效電晶體U1_3、11M 的没極更輸出電流13、14。 偏壓电路120中,P型場效電晶體121-1與121_2、 ❹ 盥%晶體1213與13M以及浮動式電流源⑵·1 \在/力能上相同與圖2A,故不贅述。而相異處在於 二調變,123·1的位置移至浮動式電流源122_2的輸出 =阻Hm23_2’其兩端分職接至浮動式電流源 -的輸出端(偏壓點¥13)與p型場效電晶體121_4(接點 =1)。此外,在輪入級11〇巾,n型場效電晶體⑴所 生的電/泉13流向]si型場效電晶體121_4,p型場效電晶 體UM所產生的電流14流向N型場效電晶體121-3。在 互補式輸出級13Q巾,p型場效電晶體以及N型場 200941931 090 265631νν Γ. d oc/p 效電晶體131-2在功能上相同與圖2A,故不贊述。 AB類運算放大器200B之整體操作敘述如下,輸入級 110在接收輸入信號Vi及輸出信號v〇後送出電流η、工2, 若輸出信號Vo大於輸入信號Vi時,則電流14 ^於電流 13,反之亦然。接著,阻值調變器會根據13、14的電流調 整阻值的大小,且其中一端(偏壓點Vb)的電壓可控制^補 式輸出級130的電流輸出大小。 ❹ 當電流14小於電流13時(即輸出信號Vo大於於輸入 信號Vi),阻值調變器123_2的電阻值變大。藉此:阻值調 變器I23-2兩端的賴差亦隨著增加,使得偏壓點v ^壓值可以上升到較高的電壓值,理想上可以達到最 的:差=^來,N型場效電晶體_的源極與間極 便倉匕自㈣3f取大㈣壓差’ ^型場效電晶體131_2 使月b自負载14〇抽回最大的電流。 产級11G更可㈣_至倾電路12G的p型電 〇 電,鏡’如圖2c所示。圖-為依據本二 %二二二運算,大器職的電關。當輪出信號 、 。5虎Vi %,阻值§周變器123-1的電愿差我县 時將由Ρ刑二 電堡差為最小。如前所述,此 140,而自s 電晶體131_1提供最大的電流給負載 使得互補式^!40回流至N型場效電晶體131~2為最小, 之,當ιΓίι 3〇輪出至負載140的電流為最大。反-的電>1差Λ 大於輸入信號Vi時’阻值調變器⑵-2 左马取大,而阻值調變器^34的電壓差為最小。 200941931 -’ ·----- 090 26563twf.doc/p 如前所述,此時’將由N型場效電晶體131-2自負載140 抽回最大的電流,而來自P型場效電晶體13M為最小, 使得互補式輸出級13〇自負载140抽回最大的電流。 一此外’塵差调整器123-1亦可以是電晶體,如圖3八 戶$不。圖3A為依據本發明另一實施例之AB類運算放大 器3〇〇A的電路圖。其中,電晶體123-1的問極受控於控 制電壓vs卜且控制電壓VS1可以為定值。電晶體123」 Q 的汲極耦接於偏壓點Va,用以調控P型場效電晶體131-1 的輸出電流大小’使得P型場效電晶體131-1便能輸出本 身最大的輸出電流。 壓差調整器亦可用來調控N型場效電晶體13丨_2的輸 出電流大小,如圖3B所示。圖3B為依據本發明另一實施 例之AB類運算放大器300B的電路圖。電晶體123_2的閘 受控於控制電壓VS2,且控制電壓VS2可以為定值。電晶 體123-1的沒極耗接於偏壓點vb,用以調控n型場效電晶 體131-2的輸出電流大小,使得N型場效電晶體131_2便 能自負載140抽回最大的電流。 壓差調整器更可同時調控P型場效電晶體131_1以及 N型場效電晶體〗31_2的輸出電流大小,如圖3C所示。圖 3C為依據本發明另一實施例之AB類運算放大器3〇〇c的 電路圖。當輸出信號Vo小於輸入信號Vi時,電晶體123-1 的電壓差為最大’而電晶體Π3-2的源極與汲集間電壓差 為最小。如前所述,此時將由p型場效電晶體131_1提供 最大的電流給負載140,而自負載140回流至N型場效電 12 200941931 26563twf.d〇c/p 晶體131-2為最小,使得互補式輸出級13〇輸出至負載14〇 的電流為最大。反之,當輸出信號v〇大於輸入信號vi時, 電晶體123-2的電壓差為最大,而電晶體的電壓差 為最小。如前所述,此時,將由N型場效電晶體131_2自 負載140抽回最大的輸出電流,而來自p型場效電晶體 131-1為最小,使得互補式輪出級13〇自負載14〇抽回的 電流為最大。The O body and the N type field effect transistor are fresh, and the differential pressure regulator 123-2 may be a resistance modulator. ^Continued ^Fig. 2Β 'In the input level U0, the p-type field effect transistor moving wheel is paired, the 场 field effect transistor (1)·3, 111·4 = other = input signal Vi and output signal ν〇, p type The field source power = m3, lu_4 source_ is connected to the current source (4)_2, and the current source (4)_2 2 is connected to the power supply terminal VDDOP type field effect transistors U1_3, 11M. In the bias circuit 120, the P-type field effect transistors 121-1 and 121_2, the ❹ 盥% crystals 1213 and 13M, and the floating current source (2)·1 \ are the same as those in FIG. 2A, and therefore will not be described again. The difference is in the second modulation, the position of 123·1 is shifted to the output of the floating current source 122_2=the resistance Hm23_2' is connected to the output terminal of the floating current source (bias point ¥13) P-type field effect transistor 121_4 (contact = 1). In addition, in the wheeled stage 11 wipes, the electric/spring 13 generated by the n-type field effect transistor (1) flows to the [si] field effect transistor 121_4, and the current 14 generated by the p-type field effect transistor UM flows to the N-type field. Effect transistor 121-3. In the complementary output stage 13Q, p-type field effect transistor and N-type field 200941931 090 265631νν Γ. d oc / p effect transistor 131-2 is functionally identical to Figure 2A, so it is not mentioned. The overall operation of the class AB operational amplifier 200B is as follows. The input stage 110 sends the current η, the work 2 after receiving the input signal Vi and the output signal v, and if the output signal Vo is greater than the input signal Vi, the current 14 is at the current 13. vice versa. Then, the resistance modulator adjusts the resistance according to the current of 13, 14, and the voltage of one end (bias point Vb) can control the current output of the complementary output stage 130. ❹ When the current 14 is less than the current 13 (i.e., the output signal Vo is greater than the input signal Vi), the resistance value of the resistance modulator 123_2 becomes larger. Therefore, the differential between the two ends of the resistance modulator I23-2 also increases, so that the bias voltage v ^ voltage value can rise to a higher voltage value, ideally can reach the most: difference = ^, N The source and inter-electrode _ of the field effect transistor _ from the (four) 3f take the large (four) differential pressure ' ^ type field effect transistor 131_2 to make the monthly b from the load 14 〇 to draw back the maximum current. The production grade 11G is more (four) _ to the p-type circuit of the tilting circuit 12G, and the mirror ' is as shown in Fig. 2c. Figure - is based on the two % two two two calculations, the power of the large equipment. When the signal is turned out, . 5 Tiger Vi%, resistance § Circumferential 123-1 electric power will be poor when the county will be the second sentence. As previously mentioned, this 140, while the maximum current is supplied from the s-transistor 131_1 to the load, so that the complementary ^!40 reflows to the N-type field effect transistor 131~2 is minimal, and when ιΓίι 3〇 is taken out to the load The current of 140 is the largest. When the inverse-electricity >1 difference is greater than the input signal Vi, the resistance modulator (2)-2 is left larger, and the voltage difference of the resistance modulator ^34 is minimum. 200941931 -' ·----- 090 26563twf.doc/p As mentioned above, 'the maximum current will be drawn back from the load 140 by the N-type field effect transistor 131-2, and the P-type field effect transistor 13M is minimized such that the complementary output stage 13〇 draws the maximum current from the load 140. In addition, the dust difference adjuster 123-1 may also be a transistor, as shown in Fig. 3. Fig. 3A is a circuit diagram of a class AB operational amplifier 3A according to another embodiment of the present invention. Wherein, the polarity of the transistor 123-1 is controlled by the control voltage vs and the control voltage VS1 can be a fixed value. The gate of the transistor 123" Q is coupled to the bias point Va for regulating the output current of the P-type field effect transistor 131-1 so that the P-type field effect transistor 131-1 can output its own maximum output. Current. The differential pressure regulator can also be used to regulate the output current of the N-type field effect transistor 13丨_2, as shown in Fig. 3B. Figure 3B is a circuit diagram of a class AB operational amplifier 300B in accordance with another embodiment of the present invention. The gate of the transistor 123_2 is controlled by the control voltage VS2, and the control voltage VS2 can be a constant value. The insufficiency of the transistor 123-1 is consumed by the bias point vb for regulating the output current of the n-type field effect transistor 131-2, so that the N-type field effect transistor 131_2 can be withdrawn from the load 140 by the maximum. Current. The differential pressure regulator can simultaneously regulate the output current of the P-type field effect transistor 131_1 and the N-type field effect transistor 31_2, as shown in FIG. 3C. Fig. 3C is a circuit diagram of a class AB operational amplifier 3〇〇c according to another embodiment of the present invention. When the output signal Vo is smaller than the input signal Vi, the voltage difference of the transistor 123-1 is the largest ' and the voltage difference between the source and the collector of the transistor Π3-2 is the smallest. As described above, at this time, the maximum current is supplied from the p-type field effect transistor 131_1 to the load 140, and the self-load 140 is reflowed to the N-type field effect power 12 200941931 26563 tw.d 〇 c / p crystal 131-2 is the minimum, The current output to the load 14 互补 of the complementary output stage 13 为 is maximized. On the contrary, when the output signal v 〇 is larger than the input signal vi, the voltage difference of the transistor 123-2 is the largest, and the voltage difference of the transistor is the smallest. As described above, at this time, the maximum output current will be drawn back from the load 140 by the N-type field effect transistor 131_2, and the minimum from the p-type field effect transistor 131-1, so that the complementary wheel-out stage 13 is self-loaded. The current drawn at 14 为 is the largest.

另外,上述貫施中的AB類放大器3〇〇A、3〇〇B與3〇〇c 的P型場效電晶體123·1與]^型場效電晶體123_2不限定 操作區域,可以是飽和區(saturation mode)或是三極管區 (triode mode)。 。‘上所述,本發明在偏壓電路中加入至少一個壓差調 其耦接於輸入級與輸出級之間。輸入級依據輸入信 =出“號而產生電流,此電流可用來調控壓差調整器 、 ^乂控制輸出級輸出或抽回的電流大小。與傳統的 Ο 4器相比’本發明之實施例所提供的AB類運 動铲力器可以抽回或輸出較大的電流,因此具有較強的驅 太路日^本發明已以實施例揭露如上’ ·然其並非用以限定 本發明之技術領域中具有通常知識者,在不脫離 本i明之範圍内,當可作些許之更動與潤飾,因此 a 〇x '、〜乾固當視後附之申請專利範圍所界定者為 13 200941931 090 26563twf.doc/p 【圖式簡單說明】 圖1繪示為傳統AB類運算放大器100之電路圖。 圖2A為依據本發明實施例之AB類運算放大器200A 的電路圖。 圖2B為依據本發明實施例之AB類運算放大器200B 的電路圖。 圖2C為依據本發明實施例之AB類運算放大器2〇〇C 的電路圖。 圖3A為依據本發明另一實施例之ab類運算放大器 300A的電路圖。 圖3B為依據本發明另一實施例之ab類運算放大器 300B的電路圖。 圖3C為依據本發明另一實施例之ab類運算放大器 300C的電路圖。 ** 【主要元件符號說明】 1〇〇 :傳統AB類運算放大器 110 :輸入級 120 :偏壓電路 130 :互補式輪出級 14〇 :負載 111-1、111、2、121_3、121_4、131_2: N 型場效電晶 t in-3、11M、12M、121_2、13]U1 : p 型場效電晶 14 200941931_ 26563twf.doc/p 141-1、141-2 :電流源 122- 1、122-2 :浮動式電流源 123- 1、123-2 :壓差調整器 Va、Vb :偏壓點In addition, the P-type field effect transistor 123·1 and the field-effect transistor 123_2 of the class AB amplifiers 3〇〇A, 3〇〇B, and 3〇〇c in the above-described embodiments do not define an operation region, and may be Saturation mode or triode mode. . As described above, the present invention incorporates at least one differential voltage adjustment in the biasing circuit coupled between the input stage and the output stage. The input stage generates a current according to the input signal = "number", which can be used to regulate the differential pressure regulator, the output current of the output stage or the current drawn back. Compared with the conventional Ο 4 device, the embodiment of the present invention The provided class AB motion shovel can draw back or output a large current, and thus has a strong drive path. The present invention has been disclosed in the above embodiments by way of example - but it is not intended to limit the technical field of the present invention. Those who have the usual knowledge can make some changes and refinements without departing from the scope of this specification. Therefore, the definition of patent application scope is 13 200941931 090 26563twf. Doc/p [Simplified Schematic] Figure 1 is a circuit diagram of a conventional class AB operational amplifier 100. Figure 2A is a circuit diagram of a class AB operational amplifier 200A in accordance with an embodiment of the present invention. Figure 2B is an AB in accordance with an embodiment of the present invention. Figure 2C is a circuit diagram of a Class AB operational amplifier 2A in accordance with an embodiment of the present invention. Figure 3A is a circuit diagram of an ab-type operational amplifier 300A in accordance with another embodiment of the present invention. 3B is a circuit diagram of an ab class operational amplifier 300B according to another embodiment of the present invention. Fig. 3C is a circuit diagram of an ab class operational amplifier 300C according to another embodiment of the present invention. ** [Major component symbol description] 1〇〇: Conventional class AB operational amplifier 110: input stage 120: bias circuit 130: complementary wheel-out stage 14〇: load 111-1, 111, 2, 121_3, 121_4, 131_2: N-type field effect transistor t in-3 , 11M, 12M, 121_2, 13] U1: p-type field effect transistor 14 200941931_ 26563twf.doc/p 141-1, 141-2: current source 122-1, 122-2: floating current source 123-1 123-2: Differential pressure regulator Va, Vb: bias point

Val、Vbl :接點Val, Vbl: contact

Vo :輸出端Vo : output

Vi :輸入端 VDD :電源端 VS1、VS2 :控制電壓Vi : Input VDD : Power terminal VS1, VS2 : Control voltage

1515

Claims (1)

200941931_ 26563twf.doc/p 十、申請專利範圍: 1. 一種AB類運算放大器電路,具有一第一與第二 端,該第一端用以接收一第一電壓,該第二端用以輸出一 第二電壓,包括: 一第一差動輸入對,辆接於該第一與第二端,具有一 第三與第四端,用以根據該第一與第二電壓的大小來決定 一第一與第二電流,其中,該第三與該第四端分別用以輸 ©出該第一與第二電流; 一偏壓電路,耦接於該第一差動輸入對,包括一第一 壓差調整器,用以接收該第一與第二電流,並根據該第一 與第二電流產生一第一壓差於該第一壓差調整器;以及 一互補式輸出級,耦接於該偏壓電路,包括彼此串接 的一第一 P型與第一 N型電晶體,該第二端耦接於該第一 P型與第一 N型電晶體之間; 其中,該第一壓差調整器耦接於該第三端與該互補式 輸出級之間。 〇 2.如申請專利範圍第1項所述之一種AB類運算放大 器電路,其中,該第一壓差調整器是一第一阻值調變器, 用以根據該第一與第二電壓調變其阻值。 3.如申請專利範圍第2項所述之一種AB類運算放大 器電路,其中,該第一壓差調整器耦接於該第三端與該第 一P型電晶體之間。 4.如申請專利範圍第3項所述之一種AB類運算放大 器電路,其中,該第一阻值調變器是一第二P型電晶體, 16 200941931 090 26563twf.doc/p 其閘極柄接於一第一固定電壓。 5.如申請專利範圍第2項所述之 器:路’其中,該第一壓差調整器_於該第 一 N型電晶體之間。 嘀亥第 7請專利範圍第5項所述之—種AB _算故大 ^路’其中’該第-阻值調變器是 其閘極耦接於一第二固定電壓。 1冤日日體, 器電it範圍第3_述之-脚類運算玫大 ^:ί二差動輸入對’耦接於該第-與第二端,具有- =二=端,用以根據該第—與第二電壓的大小來決定 其中’該第五與該第六端分別用以輪 出該第一與第二電流; 則 ❹ 電路更包括—第二壓差調整器,該偏壓 ==之=二壓差調整器输錄第三m = 器雷【如:r專利,圍第7項所述之-種AB類運算放大 ^第H壓差調整^是―第二阻值調變器, =第-阻值調變ϋ用以根據該第—與第二電壓調變其阻 器電^ 項f述之一種仙類運算放大 二弟阻值调變器是一第二Ρ型電晶體, /' >P 定電壓;該第二阻值調變器是一第 17 200941931., 090 26563twf.doc/p 二N型電晶體,其閘極耦接於一第二 10.如申請專利範圍第= :器電路’其…當該一升時4 = 的阻值亦上升。4 '[上升’該第—阻值調變器 12. 如申請專利範圍第5項所述之一 々 大器電路,其巾,辦該f 1運异放 上升。 降時,該第一壓差則 13. 如申請專利範圍第12項所 大器電路,其中,當該第二電 =運算放 的阻值則上升。 哗該第一阻值調變器 大器電路士,1;專!所述之-種ab類運算放 ^ ύ 3亥弟一圭動輸入對包括. ❹ 輕接電晶體’其閑_接於該第一端,其没極 其閘極缺於該第二端,其祕 一=流源’其一端耦接於地,另一端則耦接於 與第四Ν型電晶體的源極。 弟- 士突i5·如申請專利範圍第5項所述之一種ΑΒ類運算放 。:路:其中’該第一差動輸入對包括: 第—1>型黾晶體,其閘極耦接於該第一端,其汲極 200941931 -090 26563twf.doc/p 耦接於該第三端; —第四P型電晶體,其閘極耦接於該第二端,其汲極 耦接於該第四端;以及 —電流源,其一端耦接於地,另一端則耦接於該第三 與第四N型電晶體的源極。 ^16.如申請專利範圍第I項所述之一種AB類運算放 大器電路,其中,該偏壓電路包括: ❾认· H流鏡’具有—第七與第人端,該第七端轉接 ;該第二端,該第八端則搞接於該第四端; 一第二電流鏡,具有一第九與第十端;以及 ^個洋動電流源’其中一個浮動電流源輕接於該第八 [ft端之間’另―個浮動電絲_接於該第一壓差調200941931_26563twf.doc/p X. Application Patent Range: 1. A class AB operational amplifier circuit having a first and a second end, the first end for receiving a first voltage, and the second end for outputting a The second voltage includes: a first differential input pair connected to the first and second ends, having a third end and a fourth end, configured to determine a first according to the magnitude of the first and second voltages And a second current, wherein the third and the fourth end respectively output the first and second currents; a bias circuit coupled to the first differential input pair, including a first a differential pressure regulator for receiving the first and second currents, and generating a first differential pressure according to the first and second currents to the first differential pressure regulator; and a complementary output stage coupled The first P-type and the first N-type transistor are connected in series with each other, and the second end is coupled between the first P-type and the first N-type transistor; wherein The first differential pressure regulator is coupled between the third end and the complementary output stage. A class AB operational amplifier circuit according to claim 1, wherein the first differential pressure regulator is a first resistance modulator for adjusting according to the first and second voltages. Change its resistance. 3. The class AB operational amplifier circuit of claim 2, wherein the first differential pressure regulator is coupled between the third terminal and the first P-type transistor. 4. A class AB operational amplifier circuit according to claim 3, wherein the first resistance modulator is a second P-type transistor, 16 200941931 090 26563twf.doc/p its gate handle Connected to a first fixed voltage. 5. The device of claim 2, wherein the first differential pressure regulator is between the first N-type transistors. In the seventh paragraph of the patent application, the type AB is considered to be the same as the second fixed voltage. 1冤日日体, 器电it range 3_述-footwork operation ^大^: ί2 differential input pair 'coupled to the first and second ends, with -= two = end, for Determining, according to the magnitude of the first and second voltages, wherein the fifth and the sixth ends are respectively used to rotate the first and second currents; then the circuit further comprises a second differential pressure adjuster, the partial Pressure == = two differential pressure regulator to record the third m = device mine [such as: r patent, around the seventh item - kind of class AB operation amplification ^ the second pressure difference adjustment ^ is the second resistance value The modulator, the first-resistance modulation ϋ is used to amplify the resistance of the resistor according to the first and second voltages, and the second-order resistor is a second Ρ Type transistor, /' > P constant voltage; the second resistance modulator is a 17th 200941931., 090 26563twf.doc / p two N-type transistor, the gate is coupled to a second 10. For example, the scope of the patent application =: the circuit of the device [...] when the one liter, the resistance of 4 = also rises. 4 '[Rise] the first-resistance modifier 12. As one of the 々 电路 电路 电路 , , , 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 When the time is lowered, the first differential pressure is 13. As in the patent circuit of the 12th item, the resistance of the second electric = operational amplifier rises.哗The first resistance value transformer circuit, 1; special! The above-mentioned kind of ab class operation put ^ 亥 亥 一 一 圭 圭 圭 圭 输入 输入 输入 圭 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻The first end is not extremely gate-deficient at the second end, and the other end is connected to the ground and the other end is coupled to the source of the fourth germanium transistor.弟 - 士突i5·A type of 运算-like operation as described in item 5 of the patent application. :路: wherein the first differential input pair comprises: a first -1 type 黾 crystal, the gate of which is coupled to the first end, and the drain of the terminal 200941931 -090 26563 twf.doc/p is coupled to the third a fourth P-type transistor having a gate coupled to the second end and a drain coupled to the fourth end; and a current source coupled to the ground at one end and coupled to the other end Sources of the third and fourth N-type transistors. [16] A class AB operational amplifier circuit according to claim 1, wherein the bias circuit comprises: a ···H flow mirror ′ having a seventh and a human end, the seventh end The second end, the eighth end is connected to the fourth end; a second current mirror having a ninth and tenth end; and an ocean current source 'one of the floating current sources is lightly connected Between the eighth [ft end] another floating wire _ connected to the first differential pressure adjustment 1919
TW97110809A 2008-03-26 2008-03-26 Class ab operation amplifier circuit TWI359561B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114744971A (en) * 2022-06-14 2022-07-12 禹创半导体(深圳)有限公司 AB type operational amplifier
TWI792765B (en) * 2021-12-14 2023-02-11 大陸商北京集創北方科技股份有限公司 Amplifier with programmable offset voltage, capacitive touch chip, capacitive touch display device and information processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI792765B (en) * 2021-12-14 2023-02-11 大陸商北京集創北方科技股份有限公司 Amplifier with programmable offset voltage, capacitive touch chip, capacitive touch display device and information processing device
CN114744971A (en) * 2022-06-14 2022-07-12 禹创半导体(深圳)有限公司 AB type operational amplifier

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