200939453 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種電容結構，尤指一種具有高電容量之電容 結構。 【先前技術】 電容係為儲存電荷之元件，常用於各式積體電路，例如射頻積 ❹體電路⑽抑與類比電路(anal〇gcircuit)。基本上，電容結構主要 係由二相對之_與—設於二電極之間的介電材料所構成。上述 =極分別電連接至二個不同㈣位，且二電極之間係利用上述 J電材料所隔開，可作為電荷儲存之用。 、寻刊弟 6,822,312 號專利⑽ Patent No 6 822 31 ，了-種指間交又多層電容結構。請參考 中第1圖為習知指間交又電容結構20之外觀干二？ 而2圖_的是第2圖所示之習知指間交 "济如第1圖與第2圖所示，習知指間交】;:，側視 用積體電路之__鶴形成於—半電讀構2〇係利 層11包含由導電條22形成 土 Μ上。第一導電 電條23形成之第二陣列 ]帛―導電層12包含由導 第三陣列，細導電層14包;^ =導電條24形成之 外，習知指間交又電容㈣導電條25形成之第四陣列。此 -構2〇另包含一層填充於半導體基底以 200939453 與第一導電層11之間M g B,nsi 4. 门的第一介電層（圖未示）、一層填充於第一導 電層與第二導電層12之間的第二介電層27、一層填充於第二 導電層12與第三導電層之_第三介電層28，以及-層填充 於第一導電層】3與第四導電層14之間的第四介電層29。 導電條22、23、24、25於垂直方向上彼此互相對應排列，上 下相鄰轉電條22、Μ、％、％則糊垂直延伸的導電插塞如、 31、32互相電連接，其中導電插塞％、導電插塞w與導電插塞 刀另Η於第一介電層27、第三介電層28與第四介電層29之 中。上下相鄰的一個導電條22、一個導電條23、一個導電條24、 一個導電條25 ’以及位於其中的導電插塞3〇、3卜32可以形成-個垂直延伸板狀物33，使習知指間交叉電容結構2〇具有多個彼此 平行排列的垂直延伸板狀物33。部分的垂直延伸板狀物33會透過 底4或頂邛而電連接至一端點A，而另一部分的垂直延伸板狀物 33會透過底部或頂部而電連接至一端點B。端點A與端點B會電 連接至不同電位，以形成習知指間交叉電容結構2〇。 如第3圖所示，習知指間交又電容結構20的總電容量係為垂 直延伸板狀物33彼此對應部分之電容量Cc以及垂直延伸板狀物 33彼此的邊緣所產生之電容量Cf的總和。其中，電容量Cc包含 了左右相鄰的導電條之間的感應電容量與左右相鄰的導電插塞之 間的感應電容量’為習知指間交叉電容結構20的主要電容量來源。 200939453 由於習知指間交叉電容結構20之垂直延伸板狀物33係利用 垂直排列方式獲得板對板之間的感應電容值，因而必須佔用相當 大的面積來產生較大的電容量，如此一來將大幅增加電容結構的 面積，而導致積體電路之積集度降低，因此習知電容結構仍待進 一步改善。 【發明内容】 本㈣之目的之-在於提供—㈣容輯，贿升電容量。 根據本發明之-難實酬，本魏提供—觀容結構，包 含有-第-電極…第二電極與—介電材料。第—電極包含有複 數個彼此電連接_狀導電結構，各網狀導電結構皆具有相同之 佈局圖案電極包含有複數個彼此電連接的網狀導電結構， 網狀導電結構與網狀導電結構彼此間隔交疊排列，各網狀導電結 構皆具有相同之佈局圖案。介電材料填充於第一電極與第二電極 夕Rfl。 嫌ί^發明之另一較佳實施例’本發明另提供一種電容結 =、：包含有至少一第一導電層’第-導電層具有-第-=,Γ導電圖案包含有至少一網狀導電結構與複數個島 策連接至―第—電位，而驗導電塊皆電連接至 8 200939453 一第二電位。 為讓本發明之上述目的'特徵、和優點能更明顯易懂，下文特 舉一較佳實施方式，並配合所附圖式，作詳細說明如下。然而如 下之較佳實施方式與圖式僅供參考與說明用，並非用來對本發明 加以限制者。 <貫施方式】 ❹ |參考第4圖至第7圖。第4圖繪示的是本發明第—較 施例電容結構之俯視示意圖，第5圖為第4圖所示之第 電層210的佈局示意圖，第6圖為第4圖所示之第二導電層咖 :佈局示意圖，而第7咖的是本發明第一較佳實施例； 的塞層的佈局示意圖，其中相同的元件或部位沿用相同^ 絲表不。需注意的是圖式僅以說明為目的，並未依 二導二是’本發明電容結構2⑻並不侷限於僅由第 有 :、第一導電層230堆疊而成之雙層結構，而可包人 中ϊ二導電層’例如為四層堆疊結構或六層堆疊結構，： ° 電0之導電圖案佈局皆可同於第-導電層210之暮齋、 居=3 ’而偶數導電層之導電圖案佈局則皆可同於： θ 230之導電圖案232佈局。 導電 與至===包含有至少-第-導電層灿 曰 且第一導電層230位於第一導電層以〇 9 200939453 . 上方。第一導電詹21〇之導電圖案212與第二導電層230之導電 圖案232皆包含有矩形的網狀導電結構。如第5圖所示，第一導 電層210具有一導電圖案212，而導電圖案212包含有至少一網狀 導電結構214與複數個島狀導電塊㈣如細⑽由別。網狀導 電結構214可由多個矩形導電環218所組成，且各矩形導電環218 .分別可圍繞出一個矩形網眼215。各島狀導電塊216可設置於各矩 形網眼2i5之中而不接觸到網狀導電結構2M。其中，網狀導電結 ❹構214可電連接至一第一電位(圖未示），作為電容結構2〇〇之第一 電極的一部份島狀導電塊216皆電連接至一第二電位(圖未 示）’作為電容結構200之第二電極的一部份，例如第一電位與第 二電位可分別為一正電位與一負電位。 如第6圖所示，第二導電層23〇具有一導電圖案232。導電圖 案232包含有至少-網狀導電結構说與複數個島狀導電塊况。 網狀導電結構234同樣可由多個矩形導電環238所組成，且各矩 Ο 形導電環238分別可圍繞出一矩形網眼235。於本實施例中，導電 圖案232與導電圖案212的圖案形狀相同但設置方位不同(旋轉 180度）。如此一來，網狀導電結構234與網狀導電結構214可具 有相同的導電佈局’且彼此呈錯位排列。各島狀導電塊236可設 置於各矩形網眼235之中而不接觸到網狀導電結構234。對照第4 圖與第5圖可知，島狀導電塊236可對應於網狀導電結構214之 矩形導電環218的隅角而設置，而網狀導電結構234之矩形導電 環238的隅角則可對應於島狀導電塊216而設置。 200939453 第圖所示，電谷結構200另具有一插塞層，位於第一導 電層21G與第—導電層23()之間，包含有複數傭塞说與複數 個插塞254 ’例如可以為連接插塞或是接觸減。於本實施例中， 插塞252可。又置於各個島狀導電塊236的正下方，同時接觸且電 連接網狀導電結構2H(例如矩形導電環⑽的隅角)與島狀導電塊 236。插塞25續可設置於各個島狀導電塊加的正上方同時接 觸且電連接網狀導電結構234(例如矩形導電環η8的隅角)與島狀 ϋ 導電塊216。 本實施例之第二導㈣230與第一導電層21〇具有類似之佈局 圖案，其不同之處在於導電圖案说與導電圖案2U的配置方位 不同而使網狀導電結構214與網狀導電結構234採錯位方式佈 設。更精確地說’於矩形導電環218的長度方向與寬度方向上， 網狀導電結構234之佈設位置相對於網狀導電結構214之佈設位 ❹置皆具有一偏移值。如此一來，第二導電層230之網狀導電結構 234、第一導電層210之島狀導電塊216，以及設於其中之插塞乃4 彼此電連接，作為電容結構200之第二電極。而第二導電層23〇 之島狀導電塊236、第一導電層210之網狀導電結構214，以及設 於其中之插塞252可以彼此電連接，作為電容結構2〇〇之第一電 極。 據此，本發明之電容結構200可於單位體積内提供更高的電 11 200939453 容量’電容結構200之電容量同時包含有第一導電層210與第二 導電層230彼此之間的垂直電容量、網狀導電結構214與島狀導 電塊216彼此之間的水平電容量、網狀導電結構234與島狀導電 塊236彼此之間的水平電容量，以及插塞252與插塞254之間的 水平電容量。 本發明電容結構之主要特徵為電容結構之電極具有網狀導電 〇 結構，且網狀導電結構之網眼内設置有具不同電性的島狀導電 塊，以提供水平電容量。需注意的是，上述電容導電圖案與插塞 的佈局與形狀並不限於此，而可視需要作適度變更成為各種形 狀，例如為三角形、圓形、五角形、六角形、八角形或平行四邊 形等等形狀。請參考第8圖至第1〇圖。第8圖繪示的是本發明第 一較佳實施例電容結構300之俯視示意圖，第9圖為本發明第二 較佳實施例電容結構300之第一導電層310與其上之插塞層的佈 ❺局不意圖’而第10圖為第8圖所示之第二導電層330的佈局示意 圖其中相同的元件或部位沿用相同的符號來表示。如第8圖所 不與第一實施例之主要不同之處在於，第二實施例的第一導電層 310之導電圖案312與第二導電層330之導電圖案332皆包含有三 角形的網狀導電結構。 如第9圖所示’帛一導電層31〇財一導電圖案312，而導電 圖案312包含有至少一網狀導電結構314與複數個島狀導電塊 316。其中，網狀導電結構3〗4可由多個三角形導電環318所組成。 12 200939453 如第ίο圖所示，第二導電層33G具有一導電圖案332，且導 電圖案332包含有至少一網狀導電結構334與複數個島狀導電塊 336。第二導電層330與第一導電層31〇具有類似之佈局圖案，而 網狀導電結構334與網狀導電結構314係採錯位方式佈設。舉例 來說’於三角形導電環318其中兩個邊的方向上，網狀導電結構 334佈設位置相對於網狀導電結構別之佈設位置皆具有一偏移 ❹值如此來’島狀導電塊336可對應於網狀導電結構之三 角形導電環318的隅角而設置，而網狀導電結構334之三角形導 電環训的隅角則可對應於島狀導電塊那而設置。 其中’對照第8圖至第1〇圖可知，第一導電層31〇之各高狀 導電塊316上方皆可接觸至少一插塞2M，而第二導電層33〇之各 島狀導電塊336下方皆可接觸至少一插塞252。如此一來，第二導 電層330之網狀導電結構33心第一導電層31〇之島狀導電塊 ❹以及設於其中之插塞254彼此電連接，作為電容結構3〇〇之第二 電極。而第二導電層330之島狀導電塊336、第一導電層31〇之網 狀導電結構314，以及設於其中之插塞2义彼此電連接，作為電容 結構300之第一電極。 於刖述兩實施例中，同一實施例上、下相鄰之網狀導電結構 具有相似之佈局圖案且彼此呈錯位排列，而為了更有效利用配置 空間，於本發明之其他實施例中，上下相鄰之網狀導電結構係具 13 200939453 有不同的導電圖案，以使網狀導電結構之導電環内均可設置有至 少一島狀導電塊，並大幅提高電容結構之電極面積。請參考第^ 圖至第13圖。與第二實施例之主要不同之處在於，第一導電層41〇 之導電圖案包含有六角形的網狀導電結構。 如第12圖所示，第一導電層41〇具有一導電圖案μ〗，而導 電圖案似包含有至少-網狀導電結構似與複數個島狀導電塊 〇 416。其中’網狀導電結構414可由多個六角形導電環418所組成。 六角形導電環分別可圍繞出一六角形網眼，且各島狀導電塊 416可設置於各六角形網眼之中而不接觸到網狀導電結構414。 i 如第13圖所示，第二導電層具有一導電圖案极，且導 電圖案432包含有至少一網狀導電結構434與複數個島狀導電塊 436 /、中網狀導電結構434可由多個三角形導電環318所植成。 三角形導電環318分別可圍繞出一個三角形網眼，且各島狀導電 ❹塊436可δ又置於各二角形網眼之中而不接觸到網狀導電結構 434。例如，島狀導電塊436可對應於網狀導電結構似之六角形 導電環418的隅角而設置’而網狀導電結構434之三角形導電環 Μ8的隅角則可對應於島狀導電塊416而設置。 此外對照第u圖與第13圖可知電容結構具有一插 塞層，位於第-導電層·與第二導電層之間，其中第二導 電層43G之網狀導電結構4外第—導電層·之島狀導電塊仙， 200939453 以及設於其中之插塞254彼此電連接，作為電容結構4〇〇之第二 電極。而第二導電層430之島狀導電塊436、第一導電層41〇之: 狀導電結構414 ’以及設於其中之插塞252彼此電連接，作為電容 結構400之第一電極。 此外，本發明電容結構之導電圖案並不偈限於僅包含網狀導 電結構與島狀導電塊，實際上，本發明之網狀導電結構與島狀導 》電塊可搭配其他各種職的㈣結構*_，例如於某一層導電 層中包含有導電條。請參考第M圖，第示的是本發明第 四較佳實施例電容結構500之俯視示意圖。第四實施例與第一實 施例之主要不同之處在於，第四實施例之第二導電層53〇包含有 多個主要導電條534，可取代第一實施例之網狀導電結構说。相 較於大面積的連續網狀結構’成段的導電條更能避免電容結構產 生結構應力。 > 如第14圖所示，第二導電層53〇具有一導電圖案，且導 電圖案幻2包含有複數個主要導電條與複數個島狀導電塊 536。其中，一部份之主要導電條534a可平行於第一導電層51〇 之矩形導電環218的長度方向而設置，另一部份之主要導電條 53物可平行於第-導電層51〇之矩形導電環218的寬度方向而設 置’且一個主要導電條534a與一個主要導電條觸可形成一個 獨立的L形導電結構。島狀導電塊536可對應於網狀導電結 之矩形導電環218的隅角而設置，主要導電條53½與主要導電條 15 200939453 . 534b的交會處則可對應於第一導電層51〇的島狀導電塊(圖未示） 而設置，而主要導電條534可圍繞著各島狀導電塊536排列。 據此，島狀導電塊.536不會接觸到主要導電條534’島狀導電 塊536可透過其正下方的插塞(圖未示)而電連接至網狀導電結構 214 ’形成電谷結構5〇〇之第一電極，而第一導電層的島狀導 電塊(圖未示)則透過其正上方的插塞(圖未示)電連接至主要導電條 534，形成電容結構5〇〇之第二電極。 〇 另外，於本發明之其他實施例中，第二導電層530之主要導 電條534亦可具有其他佈局配置。請參考第15圖至第18圖。 如第15圖與第16圖所示，第一導電層610具有一導電圖案 612,而導電圖案612包含有至少一網狀導電結構614與複數個島 狀導電塊616。第二導電層630具有一導電圖案632,且導電圖案 Ο 632包含有複數個主要導電條634與複數個島狀導電塊636。其 中，一部份之主要導電條634a可平行於第一導電層61〇之矩形導 電環218的長度方向而設置，且主要導電條634&可彼此平行並 排。另外，另一部份之主要導電條63物則可設置於主要導電條63乜 之間，平行於第一導電層_之矩形導電環218的寬度方向而彼 此並排。各主要導電條634正下方皆設置有至少一插塞254，各插 塞254正下方皆可對應至島狀導電塊616，且各主要導電條634、 各插塞254與各島狀導電塊616皆可電連接至第二電位，以形成 200939453 電容結構600之第二電極。另一方面，島狀導電塊636可透過其 正下方的插塞252而電連接至網狀導電結構614，形成電容結構 600之第一電極。 如第17 _第18圖所示，第一導電層71〇具有一導電圖案 712 ’而導電圖案712包含有至少一峨導電結構7M與複數個島 狀導電塊716。第二導電層730具有一導電圖案加，且導電圖案 732包含有複數個主要導電條734與複數個島狀導電塊…。盆 中，各主要導電條734正下方皆連接至一個插塞254，各插塞祝 正下方皆可對應至島狀導電塊716，且各主要導電條734、各插塞 254與各島狀導電塊716皆可電連接至第二電位，以形成電容結構 7〇0之第二電極。另一方面，島狀導電塊7料透過其正下方的插 塞252而電連接至網料電結構714，形成電容結構之第一電 極0 如刖所述，本發明電容結構並不侷限於僅由第一導電層與第 二導電層堆料成之雙·構1際上，本㈣電容結構^可以 為多層的堆疊結構，例如為第一導電層、第二導電層與第三導電 層堆疊而成之三層結構。請參考第19圖，其纷示的是本發明第七 較佳實施前容結構咖之電㈣外觀示_，其 或部位沿__符號來表示。 如第19圖所示’電容結構_包含有至少-第-導電層810、 17 200939453 • 至少一第二導電層請與至少一第三導電層870。第二導電層83〇 位於第-導電層81〇上方，且第三導電層87〇位於第二導電層伽 上方。其中’本發明第七實施例之第一導電層81〇的導電圖案、 第二導電層830的導電圖案及第三導電層87〇的導電圖案分別可 與第-實施例之第-導電層210的導電圖案212、第二導電層咖 的導電圖案232及第四實施例之第二導電層53〇的導電圖案切 具有相同佈局。據此，於本發明第七實施例中，位於第一導電層 ❹810及第二導電層830之間的插塞252與插塞可與第一實施例 之插塞252與插塞254具有相同饰局，而位於第二導電層咖及 第三導電層870之間的插塞252與插塞254可與第四實施例之插 塞層的插塞252與插塞254具有相同佈局。 第一導電層_之網狀導電結構心第工導電層咖之島狀 導電塊236、第三導電層870之主要導電條534，以及設於其中之 插塞252可以彼此電連接，作為電容結構_之第一電極。第一 ❹導電層81〇之島狀導電塊216、第二導電層83〇之網狀導電結構 说、第三導電層870之島狀導電塊伽’以及設於其中之插塞故 彼此電連接，作為電容結構800之第二電極。 一 S特別注意的是，由於電容結構_係由第一導電層_、第 二導電層830與第三導電層㈣所形成之奇數層堆疊結構，當本 發明要繼續向上堆疊更多導電層來形成更高電容量時 ，位於奇數 層的網狀導電結構較佳是可以與位於偶數層的網狀導電結構互相 200939453 錯位排列，使得位於奇數層的網狀導電結構皆可互相垂直電連 接，而位於偶數層的網狀導電結構也可互相垂直電連接。如此一 =一^=高_ ’同時也使電容結__容匹 =圖，其_的是本發明第八較佳實施例電容結 構01之4刀電極的外觀示意圖，其中相同的元件喊好用相 需特別注意的是，為了清楚顯示出各層網狀導 主要導電條的相對位置，第20圖中撕示電容结構8〇1 Ο ❹ :省=輸構、主要導電條、部分島狀導電塊與部分插塞， 了電谷結構的介騎料、部分島狀導電塊與部分插塞。 如第2G騎示，電容結制i由下社依序包含有至少一第 ::=810、至少一第二導電層830、至少-第三導電層謂、 層871 Γ導電層811、至少一第五導電層831與至少一第六導電 電圖幸^ ’第四導電層811的導電圖案、第五導電層831的導 ^及第六導鶴871的導電_分別可與導電_212、導電 ㈣齋32及導電圖案532具有相同佈局，且第四導電層811之網 結構叫與第一導電層81〇之網狀導電結構⑽呈錯位排 狀^五導電層咖之網狀導電結構234與第二導電層_之網 電=構说呈錯位.而第六導電層871之主要導電條似 、-導電層87〇之主要導電條534呈錯位排列。 中，第一導電層810之網狀導電結構214、第二導電層830 、導電塊236、第二導電層87〇之主要導電條534、第四導電 19 200939453 -層811之島狀導電塊別、第五導電層83i之網狀導電結構234、 第六導電層871之島狀導電塊说，以及設於其中之插塞议可以 彼此電連接，作為電容結構801之第-電極。另外，第一導電層 _之島狀導電塊加、第二導電層83〇之網狀導電結構说、第 三導電層870之島狀導電塊S36、第四導電層811之網狀導電結構 214、第五導電層831之島狀導電塊236、第六導電層S71之主要 導電條534’以及設於其中之插塞254可以彼此電連接作為電容 ❾ 結構801之第二電極。 於本發明之其他實施例中，第一導電層、第二導電層與第三 導電層亦可分別具有三種不同的導電圖案。請參考第21圖至第24 圖。 如第21圖所示’電容結構9〇〇由下而上依序包含有一第一導 電層910、一第二導電層930與一第三導電層970。其中，如第22 ❹ 圖與第23圖所示，本發明第九實施例之第一導電層910與第二導 電層930的導電圖案分別可與第三實施例之第一導電層410與一 第二導電層430的導電圖案具有相同佈局。據此，於本發明第九 實施例中，位於第一導電層910及第二導電層930之間的插塞252 與插塞254可與第三實施例之插塞252與插塞254具有相同佈局。 如第24圖所示，第三導電層970具有一導電圖案972，且導 電圖案972包含有複數個互相平行排列的主要導電條974與複數 20 200939453 個島狀導電塊976。對照第21圖至第24圖可知，第三導電層97〇 之主要導電條974可對應於第二導電層43〇的島狀導電塊幻6而 設置，第三導電層970之各島狀導電塊976可對應於第一導電層 410之各島狀導電塊416而設置。 據此，第三導電層970之各主要導電條974可透過其正下方 的插塞252而電連接至第二導電層93〇之島狀導電塊伽，第二導 電層930之島狀導電塊436可透過其正下方的插塞252而電連接 至第-導電層410之_導電結構4丨4,以形成電容結構之第 -電極；第三導電層970之島狀導電塊可透過其正下方的插 塞254 *電連接至第二導電㉟93〇之網狀導電結構的心第工導電 層930之網狀導電結構434可透過其正下方的插塞攻而電連接 至第導電層410之島狀導電塊416，以形成電容結構鶴二 電極。 一 ❹ 〜需注意的是，前義塞之侧在於使電容電極的各個導電部 刀彼此連接而形錢極結構，因此其形狀、尺寸與設置紐等並 不限於前述實施例所揭露之樣態，而可視電容 ，触之設計。⑽該領域者應可理解，本發明另可 ^電材料或複數個介(圖未示），填充於第—電極料二電極之 為Γ結構之介電層。然而，為了清楚顯示出本發明之電 電材料絲繪祕圖巾。此外，本發明之電容結 可刀別包含有二個輪入/輸&端(圖未示），以分別對外作電連接之 21 200939453 再者，本發明電容結構可有效與金屬内連線製程整合，因此 電圖案之材質可為金屬材質，例如銘或銅等，連接插塞之材質 可為鎢、銅或鋁等，且介電層之材料可為氧化 可為其他任何導體，例如多晶，而介電層亦可依介 求而選用乳化石夕、氮化石夕、氮氧化石夕或任何單一或複合介電材料。 本發明電容結構之主要特點在於電容結構之電容量可由各層 〇 料圖案之間的垂直電容量、各層導電_之網狀導電結構鱼島 2導電塊之_水平電容量、各層導電_之主要導電條與島狀 導電塊之_水平電容量，以及連浦塞之卩摘水平電容量所貢 獻，因此電容結構之單位電容量可有效提升。 以上所碰為本㈣讀佳實_，驗本發㈣請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 ® 【圖式簡單說明】 第1圖為習知指間交又電容結構之外觀示意圖。 第2圖繪示的是第丨圖所示之習知指間交叉電容結構的部分結構 透視圖。 第3圖繪示較第2圖所示之習知制交叉電容結構的側視示意 圖。 第4圖繪示的是本發明第一較佳實施例電容結構之俯視示意圖。 第5圖為第4圖所示之第一導電層的佈局示意圖。 22 200939453 - 第6圖為第4圖所示之第二導電層的佈局示意圖。 第7圖繪不的疋本發明第一較佳實施例電容結構之插塞層的饰局 示意圖。 第8圖緣7F的是本發明第二較佳實施例電容結構之俯視示意圖。 第9圖為本判第二她實補電容結構n電層與其上之 插塞層的佈局示意圖。 第10圖為第8圖所示之第二導電層的佈局示意圖。 ❹帛11 ®繪不的是本發明第三齡實酬電容結構之俯視示意圖。 第12圖為本發明第三較佳實施例電容結構之第一導電層與其上之 插塞層的佈局示意圖。 第13圖為第11圖所示之第二導電層的佈局示意圖。 第Η _示献本㈣細概實關電容結構之俯視示意圖。 第I5 _示的是本㈣第五難實施规容結構之舰示意圖。 第16圖為第15圖所示之第—導電層及插塞層的佈局示意圖。 第Π睛示的是本發明第六較佳實施例電容結構之俯視示意圖。 第關為第17圖所示之第—導電層及插塞層的佈局示意圖。 第19圖繪示的是本發明第七較佳實施例電容結構之電極的外觀示 意圖。 ^ 第20圖繪示的是本發明第八較佳實施例電容結構之部分電極的外 觀示意圖。 第21圖繪示的是本發明第九較佳實施例電容結構之俯視示竟圖。 第22圖為本發明第九較佳實施例電容結構之第一導電層與其上之 插塞層的佈局示意圖。 23 200939453 第23圖為本發明第九較佳實施例電容結構之第二導電層與其上之 插塞層的佈局示意圖。 第24圖為第21圖所示之第三導電層的佈局示意圖。200939453 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a capacitor structure, and more particularly to a capacitor structure having a high capacitance. [Prior Art] Capacitance is a component that stores electric charge and is commonly used in various integrated circuits, such as a radio frequency integrated circuit (10) and an analog circuit (anal〇gcircuit). Basically, the capacitor structure is mainly composed of two opposite dielectric materials disposed between the two electrodes. The above-mentioned = poles are electrically connected to two different (four) positions, respectively, and the two electrodes are separated by the above J electric material, and can be used for charge storage. Patent No. 6,822,312 (10) Patent No 6 822 31, and a multi-layer capacitor structure. Please refer to the first picture in Figure 1 for the appearance of the conventional interdigital and capacitive structure 20? And the 2 figure _ is the conventional finger-to-intersection shown in Figure 2, as shown in Figure 1 and Figure 2, the traditional finger-to-finger intersection;;:, the side view of the integrated circuit __ crane Formed on the semi-electrically read 2 lining layer 11 comprises a conductive strip 22 formed on the soil. The second array formed by the first conductive strips 23] the conductive layer 12 comprises a third array, the thin conductive layer 14 is packaged; ^ = the conductive strips 24 are formed, and the conventional interdigitated and capacitive (four) conductive strips 25 are A fourth array is formed. The second structure further comprises a first dielectric layer (not shown) filled in the semiconductor substrate between the 200939453 and the first conductive layer 11 and a layer filled in the first conductive layer. a second dielectric layer 27 between the second conductive layer 12, a third dielectric layer 28 filled in the second conductive layer 12 and the third conductive layer, and a layer filled in the first conductive layer] 3 and A fourth dielectric layer 29 between the four conductive layers 14. The conductive strips 22, 23, 24, 25 are arranged corresponding to each other in the vertical direction, and the upper and lower adjacent rotating strips 22, Μ, %, % are electrically connected to the conductive plugs such as 31, 32 which are vertically extended, wherein the conductive strips are electrically connected to each other. The plug %, the conductive plug w and the conductive plug knife are further disposed in the first dielectric layer 27, the third dielectric layer 28 and the fourth dielectric layer 29. A conductive strip 22, a conductive strip 23, a conductive strip 24, a conductive strip 25', and conductive plugs 3〇, 3b 32 located therein may form a vertically extending plate 33, so that The inter-finger cross-capacitor structure 2 has a plurality of vertically extending plates 33 arranged in parallel with each other. A portion of the vertically extending plate 33 is electrically connected to an end point A through the bottom 4 or the top cymbal, and the other portion of the vertically extending plate 33 is electrically connected to an end point B through the bottom or the top. Endpoint A and Endpoint B are electrically connected to different potentials to form a conventional interdigital interdigital capacitance structure. As shown in FIG. 3, the total capacitance of the conventional interdigital and capacitive structure 20 is the capacitance Cc of the corresponding portion of the vertically extending plate 33 and the capacitance generated by the edges of the vertically extending plate 33. The sum of Cf. The capacitance Cc includes the inductive capacitance between the adjacent left and right conductive strips and the inductive capacitance between the left and right adjacent conductive plugs as the main source of capacitance of the conventional inter-finger cross-capacitor structure 20. 200939453 Since the vertically extending plate 33 of the conventional interdigitated cross-capacitor structure 20 obtains the value of the sensing capacitance between the board and the board by the vertical alignment, it is necessary to occupy a relatively large area to generate a large capacitance, such that The area of the capacitor structure will be greatly increased, resulting in a decrease in the integration of the integrated circuit, so that the conventional capacitor structure still needs to be further improved. [Summary of the Invention] The purpose of (4) is to provide - (4) tolerance, bribe power capacity. According to the present invention, it is difficult to pay for it, and the present invention provides a view structure comprising a -first electrode...a second electrode and a dielectric material. The first electrode includes a plurality of electrically conductive structures electrically connected to each other, and each of the mesh conductive structures has the same layout pattern. The electrode includes a plurality of mesh conductive structures electrically connected to each other, and the mesh conductive structure and the mesh conductive structure are mutually connected The spacers are arranged in an overlapping manner, and each of the mesh-shaped conductive structures has the same layout pattern. The dielectric material is filled in the first electrode and the second electrode Rfl. According to another preferred embodiment of the invention, the invention further provides a capacitor junction=, comprising: at least one first conductive layer, the first conductive layer has a -th-=, and the germanium conductive pattern comprises at least one mesh The conductive structure and a plurality of islands are connected to the "first" potential, and the conductive blocks are electrically connected to a second potential of 8 200939453. In order to make the above-described objects and features of the present invention more comprehensible, the following detailed description of the preferred embodiments and the accompanying drawings are set forth below. However, the preferred embodiments and figures are for illustrative purposes only and are not intended to limit the invention. <Applied method] ❹ | Refer to Figures 4 to 7. 4 is a top plan view of the capacitor structure of the first embodiment of the present invention, FIG. 5 is a schematic layout view of the electric layer 210 shown in FIG. 4, and FIG. 6 is a second view shown in FIG. Conductive layer coffee: layout schematic, and the seventh coffee is a layout diagram of the plug layer of the first preferred embodiment of the present invention, wherein the same components or parts are represented by the same wire. It should be noted that the drawings are for illustrative purposes only, and the second embodiment is that the capacitor structure 2 (8) of the present invention is not limited to the two-layer structure in which only the first conductive layer 230 is stacked, but The second conductive layer of the package is made up of a four-layer stacked structure or a six-layer stacked structure, and: the conductive pattern layout of the electric 0 can be the same as that of the first conductive layer 210, and the average conductive layer is The conductive pattern layout can be the same as: θ 230 conductive pattern 232 layout. Conductive and to === include at least a -first conductive layer and the first conductive layer 230 is located on the first conductive layer to 上方 9 200939453 . The first conductive conductive pattern 212 and the conductive pattern 232 of the second conductive layer 230 each include a rectangular mesh conductive structure. As shown in FIG. 5, the first conductive layer 210 has a conductive pattern 212, and the conductive pattern 212 includes at least one mesh conductive structure 214 and a plurality of island-shaped conductive blocks (4) such as thin (10). The mesh conductive structure 214 may be composed of a plurality of rectangular conductive rings 218, and each rectangular conductive ring 218 may surround a rectangular mesh 215, respectively. Each of the island-shaped conductive blocks 216 may be disposed in each of the rectangular meshes 2i5 without contacting the mesh-shaped conductive structure 2M. The mesh conductive junction structure 214 can be electrically connected to a first potential (not shown), and a portion of the island-shaped conductive block 216 as the first electrode of the capacitor structure 2 is electrically connected to a second potential. (not shown) 'As part of the second electrode of the capacitor structure 200, for example, the first potential and the second potential may be a positive potential and a negative potential, respectively. As shown in FIG. 6, the second conductive layer 23A has a conductive pattern 232. The conductive pattern 232 includes at least a mesh conductive structure and a plurality of island conductive blocks. The mesh conductive structure 234 can also be composed of a plurality of rectangular conductive rings 238, and each of the rectangular conductive rings 238 can surround a rectangular mesh 235, respectively. In the present embodiment, the conductive pattern 232 and the conductive pattern 212 have the same pattern shape but different orientations (rotation 180 degrees). As such, the mesh conductive structure 234 and the mesh conductive structure 214 may have the same conductive layout ' and are arranged in a staggered relationship with each other. The island-shaped conductive bumps 236 can be disposed in each of the rectangular meshes 235 without contacting the mesh-shaped conductive structures 234. 4 and 5, the island-shaped conductive block 236 can be disposed corresponding to the corner of the rectangular conductive ring 218 of the mesh-shaped conductive structure 214, and the corner of the rectangular conductive ring 238 of the mesh-shaped conductive structure 234 can be It is provided corresponding to the island-shaped conductive block 216. 200939453 The figure shows that the electric valley structure 200 further has a plug layer between the first conductive layer 21G and the first conductive layer 23(), and includes a plurality of plugs and a plurality of plugs 254', for example, Connect the plug or contact minus. In this embodiment, the plug 252 can be. Further, it is placed directly under each of the island-shaped conductive blocks 236 while contacting and electrically connecting the mesh-like conductive structure 2H (for example, the corner of the rectangular conductive ring (10)) and the island-shaped conductive block 236. The plugs 25 may be disposed directly above the respective island-shaped conductive blocks while simultaneously contacting and electrically connecting the mesh-shaped conductive structures 234 (e.g., the corners of the rectangular conductive ring η8) and the island-shaped conductive blocks 216. The second conductive layer 230 of the present embodiment has a similar layout pattern as the first conductive layer 21A, except that the conductive pattern is different from the conductive pattern 2U, and the mesh conductive structure 214 and the mesh conductive structure 234 are different. It is laid out in a wrong way. More precisely, in the length direction and the width direction of the rectangular conductive ring 218, the layout position of the mesh conductive structure 234 has an offset value with respect to the layout position of the mesh conductive structure 214. As a result, the mesh conductive structure 234 of the second conductive layer 230, the island-shaped conductive block 216 of the first conductive layer 210, and the plugs 4 disposed therein are electrically connected to each other as the second electrode of the capacitor structure 200. The island-shaped conductive block 236 of the second conductive layer 23, the mesh-shaped conductive structure 214 of the first conductive layer 210, and the plug 252 disposed therein may be electrically connected to each other as the first electrode of the capacitor structure 2''. Accordingly, the capacitor structure 200 of the present invention can provide higher power per unit volume. 11 200939453 Capacity The capacitance of the capacitor structure 200 includes the vertical capacitance between the first conductive layer 210 and the second conductive layer 230. The horizontal capacitance between the mesh conductive structure 214 and the island-shaped conductive block 216, the horizontal capacitance between the mesh conductive structure 234 and the island-shaped conductive block 236, and the between the plug 252 and the plug 254 Horizontal capacity. The main feature of the capacitor structure of the present invention is that the electrode of the capacitor structure has a mesh-shaped conductive 〇 structure, and the island-shaped conductive block with different electrical properties is disposed in the mesh of the mesh-shaped conductive structure to provide horizontal capacitance. It should be noted that the layout and shape of the above-mentioned capacitive conductive pattern and plug are not limited thereto, and may be appropriately changed into various shapes as needed, for example, a triangle, a circle, a pentagon, a hexagon, an octagon or a parallelogram. shape. Please refer to Figure 8 to Figure 1 for details. FIG. 8 is a top plan view of a capacitor structure 300 according to a first preferred embodiment of the present invention. FIG. 9 is a first conductive layer 310 of the capacitor structure 300 of the second preferred embodiment of the present invention, and a plug layer thereon. The layout of the second conductive layer 330 shown in FIG. 8 is the same as that of the same elements or portions. The main difference from the first embodiment is that the conductive pattern 312 of the first conductive layer 310 and the conductive pattern 332 of the second conductive layer 330 of the second embodiment each include a triangular mesh conductive. structure. As shown in FIG. 9, a conductive layer 31 is provided with a conductive pattern 312, and the conductive pattern 312 includes at least one mesh conductive structure 314 and a plurality of island-shaped conductive blocks 316. The mesh conductive structure 3 can be composed of a plurality of triangular conductive rings 318. 12 200939453 As shown in FIG. 2, the second conductive layer 33G has a conductive pattern 332, and the conductive pattern 332 includes at least one mesh conductive structure 334 and a plurality of island conductive blocks 336. The second conductive layer 330 has a similar layout pattern with the first conductive layer 31, and the mesh conductive structure 334 and the mesh conductive structure 314 are arranged in a misaligned manner. For example, in the direction of the two sides of the triangular conductive ring 318, the layout position of the mesh conductive structure 334 has an offset value relative to the layout position of the mesh conductive structure. Thus, the island conductive block 336 can be Corresponding to the corner of the triangular conductive ring 318 of the mesh-shaped conductive structure, the corner of the triangular conductive ring of the mesh-shaped conductive structure 334 can be set corresponding to the island-shaped conductive block. [Compared with FIG. 8 to FIG. 1 , it can be seen that each of the high-profile conductive blocks 316 of the first conductive layer 31 can contact at least one plug 2M, and the second conductive layer 33 of each of the island-shaped conductive blocks 336 At least one plug 252 can be accessed underneath. In this way, the island-shaped conductive block 心 of the first conductive layer 31 of the first conductive layer 33 of the second conductive layer 330 and the plug 254 disposed therein are electrically connected to each other as the second electrode of the capacitor structure 3〇〇 . The island-shaped conductive block 336 of the second conductive layer 330, the mesh-shaped conductive structure 314 of the first conductive layer 31, and the plugs 2 disposed therein are electrically connected to each other as the first electrode of the capacitor structure 300. In the two embodiments, the upper and lower adjacent mesh conductive structures in the same embodiment have similar layout patterns and are arranged in a dislocation arrangement with each other, and in other embodiments of the present invention, in order to utilize the configuration space more effectively. Adjacent mesh conductive structure ties 13 200939453 have different conductive patterns, so that at least one island-shaped conductive block can be disposed in the conductive ring of the mesh-shaped conductive structure, and the electrode area of the capacitor structure is greatly improved. Please refer to the figure ^ to figure 13. The main difference from the second embodiment is that the conductive pattern of the first conductive layer 41A includes a hexagonal mesh-shaped conductive structure. As shown in Fig. 12, the first conductive layer 41A has a conductive pattern μ, and the conductive pattern seems to contain at least a mesh-like conductive structure and a plurality of island-shaped conductive blocks 416. Where 'mesh conductive structure 414 can be comprised of a plurality of hexagonal conductive rings 418. The hexagonal conductive rings may each surround a hexagonal mesh, and the island-shaped conductive blocks 416 may be disposed in each of the hexagonal meshes without contacting the mesh-shaped conductive structure 414. i, as shown in FIG. 13, the second conductive layer has a conductive pattern electrode, and the conductive pattern 432 includes at least one mesh conductive structure 434 and a plurality of island-shaped conductive blocks 436, and the medium mesh conductive structure 434 may be multiple The triangular conductive ring 318 is implanted. The triangular conductive rings 318 can each surround a triangular mesh, and the island-shaped conductive blocks 436 can be placed in each of the two-dimensional mesh without contacting the mesh conductive structure 434. For example, the island-shaped conductive block 436 may be disposed corresponding to the corner of the mesh-shaped conductive structure like the hexagonal conductive ring 418, and the corner of the triangular conductive ring 8 of the mesh-shaped conductive structure 434 may correspond to the island-shaped conductive block 416. And set. In addition, referring to FIG. 9 and FIG. 13, it can be seen that the capacitor structure has a plug layer between the first conductive layer and the second conductive layer, wherein the second conductive layer 43G has a mesh-shaped conductive structure 4 outside the first conductive layer. The island-shaped conductive block, 200939453 and the plug 254 disposed therein are electrically connected to each other as the second electrode of the capacitor structure 4〇〇. The island-shaped conductive block 436 of the second conductive layer 430, the first conductive layer 41 and the plug 252 disposed therein are electrically connected to each other as the first electrode of the capacitor structure 400. In addition, the conductive pattern of the capacitor structure of the present invention is not limited to only including the mesh-shaped conductive structure and the island-shaped conductive block. In fact, the mesh-shaped conductive structure and the island-shaped conductive block of the present invention can be matched with other various (four) structures. *_, for example, a conductive strip is contained in a certain conductive layer. Referring to Figure M, there is shown a top plan view of a capacitor structure 500 in accordance with a fourth preferred embodiment of the present invention. The fourth embodiment is mainly different from the first embodiment in that the second conductive layer 53A of the fourth embodiment includes a plurality of main conductive strips 534 instead of the mesh conductive structure of the first embodiment. The segmented conductive strips are more resistant to structural stresses than the large-area continuous mesh structure. > As shown in Fig. 14, the second conductive layer 53A has a conductive pattern, and the conductive pattern 2 includes a plurality of main conductive strips and a plurality of island-shaped conductive bumps 536. Wherein, a portion of the main conductive strip 534a may be disposed parallel to the length direction of the rectangular conductive ring 218 of the first conductive layer 51, and another portion of the main conductive strip 53 may be parallel to the first conductive layer 51. The rectangular conductive ring 218 is disposed in the width direction and a main conductive strip 534a is in contact with a main conductive strip to form a separate L-shaped conductive structure. The island-shaped conductive block 536 may be disposed corresponding to the corner of the rectangular conductive ring 218 of the mesh-shaped conductive junction, and the intersection of the main conductive strip 531⁄2 and the main conductive strip 15 200939453 . 534b may correspond to the island of the first conductive layer 51〇 The conductive strips (not shown) are disposed, and the main conductive strips 534 are arranged around the island-shaped conductive bumps 536. Accordingly, the island-shaped conductive block .536 does not contact the main conductive strip 534'. The island-shaped conductive block 536 can be electrically connected to the mesh-shaped conductive structure 214 by a plug (not shown) directly under it. The first electrode of the first conductive layer, and the island-shaped conductive block (not shown) of the first conductive layer is electrically connected to the main conductive strip 534 through a plug (not shown) directly above thereof to form a capacitor structure. The second electrode. In addition, in other embodiments of the present invention, the main conductive strips 534 of the second conductive layer 530 may have other layout configurations. Please refer to Figures 15 to 18. As shown in FIGS. 15 and 16, the first conductive layer 610 has a conductive pattern 612, and the conductive pattern 612 includes at least one mesh conductive structure 614 and a plurality of island conductive blocks 616. The second conductive layer 630 has a conductive pattern 632, and the conductive pattern 632 632 includes a plurality of main conductive strips 634 and a plurality of island-shaped conductive blocks 636. A portion of the main conductive strips 634a may be disposed parallel to the length direction of the rectangular conductive ring 218 of the first conductive layer 61, and the main conductive strips 634 & may be parallel to each other. In addition, another portion of the main conductive strip 63 may be disposed between the main conductive strips 63A, parallel to the width direction of the rectangular conductive loops 218 of the first conductive layer _. At least one plug 254 is disposed directly under each of the main conductive strips 634. Each of the plugs 254 can correspond to the island-shaped conductive block 616 directly under the plugs 254, and each of the main conductive strips 634, the plugs 254 and the island-shaped conductive blocks 616 All of them can be electrically connected to the second potential to form a second electrode of the 200939453 capacitor structure 600. Alternatively, island shaped conductive bumps 636 can be electrically coupled to mesh conductive structure 614 through plugs 252 directly beneath them to form a first electrode of capacitor structure 600. As shown in Figs. 17-18, the first conductive layer 71 has a conductive pattern 712' and the conductive pattern 712 includes at least one conductive structure 7M and a plurality of island conductive blocks 716. The second conductive layer 730 has a conductive pattern plus, and the conductive pattern 732 includes a plurality of main conductive strips 734 and a plurality of island-shaped conductive blocks. In the basin, each of the main conductive strips 734 is connected to a plug 254 directly below, and each of the plugs may correspond to the island-shaped conductive block 716 directly under the plug, and each of the main conductive strips 734, the plugs 254 and the islands are electrically conductive. Block 716 can be electrically coupled to a second potential to form a second electrode of capacitive structure 7〇0. On the other hand, the island-shaped conductive block 7 is electrically connected to the mesh electrical structure 714 through the plug 252 directly under it, forming the first electrode 0 of the capacitor structure. As described above, the capacitor structure of the present invention is not limited to only The (four) capacitor structure can be a stacked structure of a plurality of layers, for example, a first conductive layer, a second conductive layer, and a third conductive layer stacked by the first conductive layer and the second conductive layer. It is a three-layer structure. Please refer to Fig. 19, which shows the appearance of the electric (4) appearance of the front-end structure of the seventh preferred embodiment of the present invention, and its or part is indicated by the __ symbol. As shown in FIG. 19, the 'capacitor structure _ includes at least a first conductive layer 810, 17 200939453. • at least one second conductive layer and at least one third conductive layer 870. The second conductive layer 83 is located above the first conductive layer 81A, and the third conductive layer 87 is located above the second conductive layer. The conductive pattern of the first conductive layer 81A, the conductive pattern of the second conductive layer 830, and the conductive pattern of the third conductive layer 87A of the seventh embodiment of the present invention may be respectively associated with the first conductive layer 210 of the first embodiment. The conductive pattern 212, the conductive pattern 232 of the second conductive layer, and the conductive pattern of the second conductive layer 53A of the fourth embodiment have the same layout. Accordingly, in the seventh embodiment of the present invention, the plug 252 and the plug between the first conductive layer 810 and the second conductive layer 830 can have the same decoration as the plug 252 and the plug 254 of the first embodiment. The plugs 252 and plugs 254 between the second conductive layer and the third conductive layer 870 can have the same layout as the plugs 252 and plugs 254 of the plug layer of the fourth embodiment. The first conductive layer _ the mesh conductive structure core conductive layer café island conductive block 236, the third conductive layer 870 main conductive strip 534, and the plug 252 disposed therein can be electrically connected to each other as a capacitor structure The first electrode of _. The island-shaped conductive block 216 of the first conductive layer 81, the mesh-shaped conductive structure of the second conductive layer 83, the island-shaped conductive block of the third conductive layer 870, and the plugs disposed therein are electrically connected to each other As the second electrode of the capacitor structure 800. A particular note is that since the capacitor structure is an odd-numbered layer stack formed by the first conductive layer _, the second conductive layer 830, and the third conductive layer (four), when the present invention continues to stack more conductive layers upward When a higher capacitance is formed, the mesh conductive structure located in the odd-numbered layer is preferably arranged in a misalignment with the mesh-shaped conductive structure located in the even-numbered layer, such that the mesh-shaped conductive structures located in the odd-numbered layers are electrically connected to each other vertically, and The mesh conductive structures located in the even layers may also be electrically connected perpendicularly to each other. Such a = a ^ = high _ ' at the same time also make the capacitance junction __ 容 = = diagram, which is the appearance of the four-pole electrode of the capacitor structure 01 of the eighth preferred embodiment of the present invention, wherein the same components shout Special attention should be paid to the phase. In order to clearly show the relative position of the main conductive strips of each layer of the mesh guide, the capacitor structure 8〇1 Ο 撕 is omitted in Fig. 20: province = structure, main conductive strip, partial island conductive The block and the partial plug, the dielectric material of the electric valley structure, a part of the island-shaped conductive block and a partial plug. For example, in the 2G riding, the capacitor junction i includes at least one first::=810, at least one second conductive layer 830, at least a third conductive layer, a layer 871, a conductive layer 811, and at least one. The conductive pattern of the fifth conductive layer 831 and the at least one sixth conductive pattern, the fourth conductive layer 811, the conductive layer of the fifth conductive layer 831, and the conductive layer of the sixth conductive 871 can be electrically conductive _212, respectively conductive (4) The stencil 32 and the conductive pattern 532 have the same layout, and the mesh structure of the fourth conductive layer 811 is called a mesh-shaped conductive structure (10) of the first conductive layer 81, which is in a misaligned row shape, and a mesh conductive structure 234 of the conductive layer The second conductive layer _ the grid = the structure is misaligned. The sixth conductive layer 871 is the main conductive strip, and the conductive layer 87 〇 of the main conductive strip 534 is arranged in a misaligned manner. The mesh conductive structure 214 of the first conductive layer 810, the second conductive layer 830, the conductive block 236, the main conductive strip 534 of the second conductive layer 87, and the island conductive block of the fourth conductive 19 200939453 - layer 811 The mesh-shaped conductive structure 234 of the fifth conductive layer 83i, the island-shaped conductive block of the sixth conductive layer 871, and the plugs disposed therein may be electrically connected to each other as the first electrode of the capacitor structure 801. In addition, the island-shaped conductive block of the first conductive layer, the mesh conductive structure of the second conductive layer 83, the island-shaped conductive block S36 of the third conductive layer 870, and the mesh-shaped conductive structure 214 of the fourth conductive layer 811 The island-shaped conductive block 236 of the fifth conductive layer 831, the main conductive strip 534' of the sixth conductive layer S71, and the plug 254 disposed therein may be electrically connected to each other as the second electrode of the capacitor ❾ structure 801. In other embodiments of the present invention, the first conductive layer, the second conductive layer, and the third conductive layer may also have three different conductive patterns, respectively. Please refer to Figures 21 to 24. As shown in Fig. 21, the capacitor structure 9 includes a first conductive layer 910, a second conductive layer 930 and a third conductive layer 970 sequentially from bottom to top. The conductive patterns of the first conductive layer 910 and the second conductive layer 930 of the ninth embodiment of the present invention may be compared with the first conductive layer 410 and the third embodiment, respectively, as shown in FIG. 22 and FIG. The conductive patterns of the second conductive layer 430 have the same layout. Accordingly, in the ninth embodiment of the present invention, the plug 252 and the plug 254 located between the first conductive layer 910 and the second conductive layer 930 can be the same as the plug 252 and the plug 254 of the third embodiment. layout. As shown in Fig. 24, the third conductive layer 970 has a conductive pattern 972, and the conductive pattern 972 includes a plurality of main conductive strips 974 and a plurality of 200939453 island-shaped conductive bumps 976 arranged in parallel with each other. As can be seen from FIG. 21 to FIG. 24, the main conductive strips 974 of the third conductive layer 97 can be disposed corresponding to the island-shaped conductive blocks of the second conductive layer 43, and the islands of the third conductive layer 970 are electrically conductive. Block 976 can be disposed corresponding to each island-shaped conductive block 416 of the first conductive layer 410. Accordingly, each of the main conductive strips 974 of the third conductive layer 970 can be electrically connected to the island-shaped conductive block gamma of the second conductive layer 93 through the plug 252 directly under it, and the island-shaped conductive block of the second conductive layer 930 436 can be electrically connected to the conductive structure 4丨4 of the first conductive layer 410 through the plug 252 directly under it to form a first electrode of the capacitor structure; the island-shaped conductive block of the third conductive layer 970 can pass through the positive electrode The lower plug 254 * the mesh conductive structure 434 electrically connected to the core conductive layer 930 of the mesh conductive structure of the second conductive 3593 can be electrically connected to the conductive layer 410 through the plug directly below it. The island-shaped conductive block 416 is formed to form a capacitor structure. ❹ 需 需 需 需 需 需 需 需 需 需 需 需 需 需 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前 前And the visual capacitance, touch design. (10) It should be understood by those skilled in the art that the present invention may further comprise an electrical material or a plurality of dielectric layers (not shown) filled in a dielectric layer of the second electrode of the first electrode. However, the wire of the electric material of the present invention is shown for clarity. In addition, the capacitor junction of the present invention includes two wheeled/input terminals (not shown) for external electrical connection 21 200939453. Furthermore, the capacitor structure of the present invention can effectively connect with metal wires. The process is integrated, so the material of the electric pattern can be made of metal, such as Ming or copper. The material of the connection plug can be tungsten, copper or aluminum, and the material of the dielectric layer can be oxidized to any other conductor, for example, The crystal layer, and the dielectric layer may also be selected according to the requirements of emulsifying stone, nickel nitride, nitrogen oxynitride or any single or composite dielectric material. The main feature of the capacitor structure of the present invention is that the capacitance of the capacitor structure can be determined by the vertical capacitance between the layers of the coating pattern, the conductivity of each layer of the grid-like conductive structure, the horizontal capacitance of the fish island 2 conductive block, and the conductivity of each layer. The horizontal capacitance of the strip and the island-shaped conductive block, as well as the horizontal capacitance of the connected plug, contributes to the effective increase in the unit capacity of the capacitor structure. The above is the subject of the present invention. (4) Reading the good _, the test of the hair (4) The equal changes and modifications made by the patent scope are all covered by the present invention. ® [Simple description of the diagram] Figure 1 is a schematic diagram of the appearance of a conventional interdigital and capacitive structure. Fig. 2 is a perspective view showing a partial structure of a conventional interdigital interdigitated capacitor structure shown in Fig. 2. Fig. 3 is a side elevational view showing the conventional cross capacitance structure shown in Fig. 2. FIG. 4 is a top plan view showing a capacitor structure according to a first preferred embodiment of the present invention. Fig. 5 is a schematic view showing the layout of the first conductive layer shown in Fig. 4. 22 200939453 - Fig. 6 is a schematic view showing the layout of the second conductive layer shown in Fig. 4. Fig. 7 is a schematic view showing the decoration of the plug layer of the capacitor structure of the first preferred embodiment of the present invention. Figure 8 is a top plan view of the capacitor structure of the second preferred embodiment of the present invention. Figure 9 is a schematic diagram showing the layout of the second electrical layer of the capacitor structure and the plug layer thereon. Fig. 10 is a schematic view showing the layout of the second conductive layer shown in Fig. 8. ❹帛11® does not depict a top view of the third-generation paid capacitor structure of the present invention. Figure 12 is a schematic view showing the layout of a first conductive layer of a capacitor structure and a plug layer thereon according to a third preferred embodiment of the present invention. Figure 13 is a schematic view showing the layout of the second conductive layer shown in Figure 11. Dijon _ Demonstration (4) A detailed schematic view of the capacitor structure. The first I5 shows the ship's schematic diagram of the fifth (d) difficult to implement the specification structure. Fig. 16 is a schematic view showing the layout of the first conductive layer and the plug layer shown in Fig. 15. The top view of the capacitor structure of the sixth preferred embodiment of the present invention is shown. The first level is a layout diagram of the first conductive layer and the plug layer shown in FIG. Fig. 19 is a view showing the appearance of an electrode of a capacitor structure according to a seventh preferred embodiment of the present invention. Fig. 20 is a perspective view showing the appearance of a part of electrodes of the capacitor structure of the eighth preferred embodiment of the present invention. Figure 21 is a top plan view showing the capacitor structure of the ninth preferred embodiment of the present invention. Figure 22 is a schematic view showing the layout of a first conductive layer of a capacitor structure and a plug layer thereon according to a ninth preferred embodiment of the present invention. 23 200939453 Fig. 23 is a schematic view showing the layout of the second conductive layer of the capacitor structure and the plug layer thereon according to the ninth preferred embodiment of the present invention. Fig. 24 is a schematic view showing the layout of the third conductive layer shown in Fig. 21.
【主要元件符號說明】 11 第一導電層 12 第二導電層 13 第三導電層 14 第四導電層 20 習知指間交叉電容結構 21 半導體基底 22 導電條 23 導電條 24 導電條 25 導電條 27 第二介電層 28 第三介電層 29 第四介電層 30 導電插塞 31 導電插塞 32 導電插塞 33 垂直延伸板狀物 34 導電插塞 200 電容結構 210 第一導電層 212 導電圖案 214 網狀導電結構 215 矩形網眼 216 島狀導電塊 218 矩形導電環 230 第二導電層 232 導電圖案 234 網狀導電結構 235 矩形網眼 236 島狀導電塊 238 矩形導電環 252 插塞 254 插塞 300 電容結構 310 第一導電層 312 導電圖案 24 200939453[Main component symbol description] 11 First conductive layer 12 Second conductive layer 13 Third conductive layer 14 Fourth conductive layer 20 Conventional inter-finger capacitance structure 21 Semiconductor substrate 22 Conductive strip 23 Conductive strip 24 Conductive strip 25 Conductive strip 27 Second dielectric layer 28 third dielectric layer 29 fourth dielectric layer 30 conductive plug 31 conductive plug 32 conductive plug 33 vertically extending plate 34 conductive plug 200 capacitor structure 210 first conductive layer 212 conductive pattern 214 mesh conductive structure 215 rectangular mesh 216 island conductive block 218 rectangular conductive ring 230 second conductive layer 232 conductive pattern 234 mesh conductive structure 235 rectangular mesh 236 island conductive block 238 rectangular conductive ring 252 plug 254 plug 300 capacitor structure 310 first conductive layer 312 conductive pattern 24 200939453
314 網狀導電結構 316 島狀導電塊 318 三角形導電環 330 第二導電層 332 導電圖案 334 網狀導電結構 336 島狀導電塊 400 電容結構 410 第一導電層 412 導電圖案 414 網狀導電結構 416 島狀導電塊 418 六角形導電環 430 第二導電層 432 導電圖案 434 網狀導電結構 436 島狀導電塊 500 電容結構 510 第一導電層 530 第二導電層 532 導電圖案 534 主要導電條 536 島狀導電塊 600 電容結構 610 第一導電層 612 導電圖案 614 網狀導電結構 616 島狀導電塊 630 第二導電層 632 導電圖案 634 主要導電條 636 島狀導電塊 700 電容結構 710 第一導電層 712 導電圖案 714 網狀導電結構 716 島狀導電塊 730 第二導電層 732 導電圖案 734 主要導電條 736 島狀導電塊 800 電容結構 801 電容結構 810 第一導電層 25 200939453 811 第四導電層 830 831 第五導電層 870 871 第六導電層 900 910 第一導電層 930 970 第三導電層 972 974 主要導電條 976 第二導電層 第三導電層 電容結構 第二導電層 導電圖案 島狀導電塊314 mesh conductive structure 316 island conductive block 318 triangular conductive ring 330 second conductive layer 332 conductive pattern 334 mesh conductive structure 336 island conductive block 400 capacitor structure 410 first conductive layer 412 conductive pattern 414 mesh conductive structure 416 island Conductive block 418 hexagonal conductive ring 430 second conductive layer 432 conductive pattern 434 mesh conductive structure 436 island conductive block 500 capacitor structure 510 first conductive layer 530 second conductive layer 532 conductive pattern 534 main conductive strip 536 island conductive Block 600 Capacitor Structure 610 First Conductive Layer 612 Conductive Pattern 614 Mesh Conductive Structure 616 Island Conductive Block 630 Second Conductive Layer 632 Conductive Pattern 634 Main Conductive Strip 636 Island Conductive Block 700 Capacitor Structure 710 First Conductive Layer 712 Conductive Pattern 714 mesh conductive structure 716 island conductive block 730 second conductive layer 732 conductive pattern 734 main conductive strip 736 island conductive block 800 capacitor structure 801 capacitor structure 810 first conductive layer 25 200939453 811 fourth conductive layer 830 831 fifth conductive Layer 870 871 sixth conductive layer 900 910 first conductive layer 930 970 Third conductive layer 972 974 main conductive strip 976 second conductive layer third conductive layer capacitor structure second conductive layer conductive pattern island conductive block
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