TW200935503A - Production method of light emitting diode (LED) with photonic crystal - Google Patents

Abstract

A production method of light emitting diode (LED) with photonic crystal is used to produce photonic crystal structures on a light emitting diode. The method mainly forms mutually-isolated first electrode and second electrode in a reaction tank and put the medium in the reaction tank to cover and contact with both the first electrode and the second electrode. Then a plurality of micro/nano-particles with uniform diameter (50nm to 5μ m) are disposed in the liquid medium so that a substrate can be suspended in the medium for performing electrophoresis and be contacted with one of the electrodes, enabling the micro-/nano-particles to be periodically arranged in single or multiple layers covering on the surface of the substrate for forming the photonic crystal structure. By this way, the production time can be greatly reduced, and the mass production problem of large-area substrates can be solved effectively.

Description

200935503 IX. Description of the invention: [Technical field of invention] Manufacturing (LED), effective desired light, end-effect body, medium chemistry can also be a specific wavelength of wavelength artificial gie photon The present invention is a "photonic crystal containing light II The polar body method, especially the process of a light-emitting diode containing a photonic crystal, becomes a process for improving the external quantum effect and improving the performance of converting electrical energy into light energy. [Prior Art] In the field of optoelectronic technology, we usually change the behavior of light by a specific substance (for example, partial excitation light, optical guided wave, etc.) to relatively produce end products, such as liquid crystal displays and light-emitting diodes. Optical fiber communication and solar cells. Most of the behavior of the above-mentioned light is achieved by changing the structure within the molecular scale of the substance, but the electromagnetic properties of the light wave in the substance are changed by the physical structure at the wavelength scale (about 100 nm to /zm), that is, no change is required. Under the premise of the intrinsic chemical structure, periodic arrays of intraocular lenses are produced on the scale of electromagnetic waves. The crystals are commonly referred to as crystals because of the electron-like material waves (De-Br(wave) and the size of the atomic lattice. Photonic crystal) The concept of photonic crystals was firstly spliced by S. John (Phys. Rev. Lett., 58 (1 98 7 ) 2486 ) and E. Yablonovitch 200935503 1987 by a variety of optical total photons. The ten-color disintegrator is prepared and prepared (Phys. Rev. Lett., 58 (1987) 2059). It is proposed in the year that when the substance has a periodic structure, the dielectric constants of the n-mass and the pore air are periodic. The three-dimensional medium formed, when the light wave (electromagnetic wave) enters, the reflected wave interferes with the incident wave, and blocks the light wave of some frequency castles, thereby generating a photonic energy gap (Photonic Band) Gap; PBG; or energy; ξ), the light-wave destructive dry-spray β in the band gap frequency can not be transmitted and generate a gap in the spectrum. Using the energy band structure characteristics of the photonic crystal, light and electricity can be produced. , acoustic elements (Nature 436, ρ. 993 (2 0 0 5 ).) ' For example: using photonic crystals, can perform upper cavity, waveguide, filtering, splitting, total reflection, gain adjustment, and its energy loss is close to Zero, so the crystal can be widely used in the design of novel optical communication components, including low starting power laser, waveguide, optical material, photonic crystal, resonant cavity, filter, optical edge, photonic crystal fiber, particle Scientists such as accelerators have also tried to apply them to photovoltaic materials such as solar electroluminescent diodes, and have proposed a variety of photonic crystal structures. In recent years, 'self-Assembly or called 200935503

Self-Organization) produces photonic crystals that are fast, inexpensive, and reduce defects. The processes currently developed using particle self-assembly phenomena are listed below: (1) Gravity precipitation method. (2) Surface tension method. (3) Oscillation arrangement method. # (4) Centrifugal force arrangement method. (5) 遽Infiltration method. (vi) Comprehensive law. These preparation methods are not easy to fabricate large-area photonic crystals. ❹ In addition, the conventional LED lighting appliances have two technical bottlenecks: First, LED lighting generates considerable heat. In order to achieve proper lighting, LED components are often placed in large quantities in lighting fixtures. As a result, LED luminaires have become a technical bottleneck. In addition, LED manufacturing costs have been declining year by year, and have the advantages of energy saving and environmental protection. However, when the lighting capacity does not meet the commercialization standards of the market, 7 200935503 still cannot completely replace all kinds of lighting such as incandescent lamps, fluorescent lamps and fluorescent lamps. Appliances and light sources. In summary, in order to enhance the commercial value of LEDs, manufacturers are striving to improve the design of LEDs, the improvement of LED materials, the change of materials in the form of heat-dissipating fins, and the improvement of R&D and technology in various directions. Therefore, how to provide a kind of LED that overcomes the conventional design and manufacture of LEDs, but does not increase the consumption of energy at the same time, and can simultaneously reduce the obstacles of high heat generated by conventional LED products, which is an urgent problem in the industry. . SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a "method for manufacturing a light-emitting diode containing photonic crystal" to improve the efficiency of utilizing LED light energy, so that the LED light-emitting unit element is not added. In this case, the brightness of the LED lamp can be increased, and the brightness is increased without causing more heat generation. The second object of the present invention is to provide a cost-effective electrophoretic self-assembly process, which can provide a large-area photonic crystal substrate and a technique for omitting cumbersome procedures, and mass production of photonic crystals for providing a photodiode in August. The body is provided with a reaction-electrode and the medium medium contacts the first inner implanted particle size particle for electrophoresis micro/nanosphere J and covers an electrode and the opposite bottom electrode and the first "micro/nano" Or the inorganic polymer is selected as a component; the titanium dioxide and the ruthenium plate are selected from the LED of 200935503. In order to achieve the above object, the method for producing the photonic crystal of the present invention is applied to the preparation of a photonic crystal structure in one step. The method includes: a trough, wherein the reaction tank is provided with a second electrode that is isolated from each other; and a liquid medium is provided, the liquid container is disposed in the reaction tank, and simultaneously covers the electrode and the second electrode; and the liquid medium cloth a plurality of micro/nano (50 nm~5/zm) uniform® particles; a substrate is suspended in the liquid medium and electrically contacted with the one electrode, so that the one particle size particles are Or a plurality of layers of the periodic row 5 form a photonic crystal structure on the surface of the substrate. In a preferred embodiment of the present invention, the second electrode is disposed at the bottom of the reaction tank and is free from the liquid medium; The spacing between the first and second electrodes is between 0.5 and 50 cm. In a preferred embodiment of the invention, the composition of the particles of the first-order particles has a polymer element component of the organic monomer. An oxide; wherein the organic monomer is selected from the group consisting of styrene, acrylic acid, and maleic acid, and the like includes: cerium oxide, zirconium dioxide, zinc oxide, aluminum oxide, or a combination thereof. In a preferred embodiment, the single crystal silicon, the polycrystal silicon, the amorphous silicon, the conductive glass, the III-V, the II-VI element 5〜6 0 wt % ; The weight ratio of the micro/nano uniform particle size to the liquid medium is in the range of 0.5 to 6 0 wt %; Liquid medium is liquid An aqueous solution or a liquid phase organic solution; the liquid medium has a pH of from 1 to 9; and the liquid medium has an operating temperature of from 10 to 150 ° C. In a preferred embodiment of the invention, wherein The reaction vessel is provided with a constant voltage source having a pressure difference of 1,000 volts, and the reaction tank is a vertical type, a horizontal type, a tilt type or another structure and type of electrophoresis tank. In a preferred embodiment of the present invention The substrate having the photonic crystal structure is prepared by electrophoresis, and is applied to the light emitting diode light emitting layer, the internal structure or the back side total reflection layer to change the external quantum efficiency of the light emitting diode. [Embodiment] In order to enable the reviewing committee to understand the technical content of the present invention and the achievable effects, the preferred embodiments will be described in detail with reference to the drawings. The invention is applied to the preparation of photonic crystal 10 200935503 structure on a light-emitting diode. According to the invention, the characteristics of the obtained photonic crystal, such as total absorption, can be controlled by the physical and chemical properties of the electrochemical and micro/nano particles. , total reflection and adjust the light path to improve the efficiency of photoelectric conversion. Referring to Figures 5 and 6, a schematic diagram of a photonic crystal self-assembly electrophoresis method for fabricating a photonic crystal of the present invention is disclosed. As shown in the figure, the present invention performs electrophoresis through a reaction tank (5) (6) and the first electrode (51) (61) and the second electrode (separated) are formed in the reaction tank (5) (6). 54) (64), and filling a reaction medium (5) (6) with a liquid medium (56) (66) to cover the first electrode (61) and the second electrode (54) simultaneously ( 64) So, in the liquid medium (56) (66), a plurality of micro/nano (5 〇 nm~... uniform particle size (53) (63) are implanted, and then a substrate is implanted. (52) (62) electrophoresing in the liquid medium (5 6 ) (6 6 ) and electrically contacting the first electrode (5 1 ) ( 6 1 ) to make the micro/negative spheres uniform The diameter particles (53) (63) are periodically arranged in a single layer or a plurality of layers and form a photonic crystal structure on the surface of the substrate (52) (62). Specifically, the reaction tank (5) (6) is Is a vertical type, a horizontal type, a tilt type or other structure and type of electrophoresis tank, and a certain voltage source is provided outside the reaction tank (5) (6), wherein the first electrode (51) (61) is free from the liquid state Medium (56) (66) inside ' The two electrodes (54) (64) are disposed on the bottom (55) (65) of the reaction tank (5) (6). Preferably, the first electrode (51) 11 200935503 (6 1) is a belt a conductive handle having a charge (in the sixth example, a negative charge) to pass through the conductive handle when the substrate (52) (62) is suspended in the liquid medium (56) (66) After the surface of the substrate (52) (62) is contacted, the micro/nanospherical uniform particle size (53) (63) is periodically arranged and coated in a single layer or a plurality of layers by an electrophoretic effect generated by energization. The surface of the substrate (5 2 ) ( 6 2 ) forms a photonic crystal structure, wherein the distance between the first electrode (51) (61) and the second electrode (54) (64) is preferably 0.5 to 50 cm. And the constant voltage supplied outside the reaction tank (5) (6) is between 1 and 1,000 volts. According to the above, the composition having the micro/nano uniform diameter particles has an organic monomer polymerization. Or an oxide containing an inorganic element component; wherein the organic monomer polymer is selected from the group consisting of styrene, acrylic acid, and maleic acid, etc., and has high light transmittance/very low loss. Organically polymerizing micro/nano polymer particles; the inorganic element oxygen compound comprises: selected from the group consisting of ceria, titania, zirconia, zinc oxide, aluminum oxide, or a combination thereof. The substrate may be selected from a single crystal. Shi Xi (sing 1 ecrysta 1

Silicon), multi-day second (p〇iyCryStai siiicon), amorphous silic〇n, conductive glass, family, ii-VI element material 'but not limited to this. The concentration range of the micro/nano uniform particle size relative to the liquid medium is in the range of 〇5~6 〇wt%; the liquid medium (56) (66) is a liquid phase aqueous solution or a liquid phase organic solution. 12 200935503 The liquid medium (56) (66) has a pH of 丨~9; the liquid medium (56) (66) has an operating temperature of 丨〇~I" and the reaction time is 0. 1~3 0 minutes under the condition of proper control, a two-dimensional or three-dimensional photonic crystal structure can be generated on the substrate (5 2 ) ( 6 2 ).

Fig. 1 to Fig. 4 are four embodiments of the present invention, except that an electrophoretic self-assembled photonic crystal is applied to the manufacture of a light-emitting diode (LED), which can be disposed on a photonic crystal total reflection mirror layer of an LED, a photonic crystal. The window layer, the photonic crystal conductive layer or any combination thereof is not limited to the four embodiments. Referring to Figures 1 and 5, there is shown a cross-sectional view of a first embodiment of a light-emitting diode of the present invention using a photonic crystal structure. As shown in FIG. 1, first, a back-type n-type contact (N-type contact) (17) is placed on the working surface of the conductive electrode (17), and a substrate (Substrate) (16) is provided. The two form a board. The working surface of the plate is placed toward the medium (56) of the electrophoresis tank, and the photonic crystal total mirror (l5) is coated by electrophoresis, followed by a conventional technique such as chemistry. In the vapor deposition method, an N-type semiconductor layer (14), an active layer (13), and a p-type semiconductor layer (12) are sequentially formed, and finally, P-type contact (ll) is electrically connected. Thus, the first embodiment 13 of the photonic crystal-containing light-emitting diode (1) is formed. 200935503 Please refer to FIG. 2 and FIG. 5 'is another embodiment of the light-emitting diode using the photonic crystal structure of the present invention. Sectional view. As shown in Fig. 2, a working substrate is provided. The back surface of the substrate is electrically coupled to the conductive handle (5 1 ), and the working surface of the substrate faces the medium (5 6 ) of the electrophoresis tank, and then the singular or plural photonic crystal substrate layer (26) is fabricated on the working substrate by electrophoresis. The composite layer is then sequentially fabricated into a N-type semiconductor layer (25), an active layer (23), and a P-type semiconductor layer (P-type Semiconductor) by a conventional method such as chemical vapor deposition. Layer) (22)' finally electrically contacts the N-type electrical contact (24) with the N-type semiconductor layer (25) and the P-type electrical contact (21) and the p-type semiconductor layer (22), respectively. Thus, another embodiment (2) of the LED containing the photonic crystal can be formed. Such a light-emitting diode (2) can totally reflect light by using a single or multiple photonic crystal substrate (2 6 ), and enables the p-type/n-type active layer to fully utilize the efficiency of photoelectric conversion to effectively concentrate the light. Shot at the work surface. Please refer to Fig. 3 and Fig. 5' for a cross-sectional view showing still another embodiment of the light-emitting diode of the photonic crystal structure of the present invention. As shown in FIG. 3, the substrate (3 6 ) is disposed, and an N-type semiconductor layer (N-type) is sequentially formed by a conventional semiconductor epitaxial technique such as vapor deposition.

Semiconductor Layer) (35), Active Layer (34), P. Type Semiconductor Layer (p_type Semi.conductor)

Layer) (33) 'The above composite plate body is electrically coupled with the conductive handle (51), and its working surface is placed toward the electrophoretic medium (5 6 ). Li 14 14 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 And processed by a conventional method to form a photonic crystal conductive glass layer (Photon ic Cry sta 1 I T0 fi 1 m) ( 3 2 ). The final sandwich structure is electrically connected to the N-type contact (37) and the P-type contact (31) at the substrate end. In this way, an embodiment of a photodiode (3) containing a photonic crystal is completed. Referring to Figures 4 and 5, there is shown a cross-sectional view of another embodiment of a light-emitting diode of the present invention using a photonic crystal structure. As shown in Fig. | p 4, the substrate (4 6 ) is disposed, and an N-type semiconductor layer (N) is sequentially formed by a conventional semiconductor epitaxial technique such as vapor deposition, and an active layer is formed. (Active Layer) (44), P-type semiconductor layer (43), the composite plate body of the above-mentioned composite plate is electrically coupled with the conductive handle (51), and the working surface thereof faces the electrophoretic medium (5) 6) Placement, photonic crystal window layer (Photonic Crystal _ Window Film) (42) is prepared by electrophoresis, and processed by a conventional method to form a conductive glass layer (ITO fi lm) (48). The final sandwich structure is electrically connected to the N-type electrical contact (N-tyPe (: 〇1^3〇1:)) (47) and P-type contact (41) at the substrate end. Thus, an embodiment of a photonic crystal-containing light-emitting diode (4) is completed. An SEM image of a photonic crystal example is shown in Fig. 7. The SEM image of the photonic crystal example can also be as shown in Fig. 8. Please refer to Figures 1 to 4. As shown, the solar cell wafer can be made of any Group A element or p- or n-type material. 15 200935503 Please refer to Figure 1 to Figure 4, as shown in the figure. It is shown that this technology can be used for twinned solar cells, III-V solar cells and IV-VI solar cells to enhance its photoelectric conversion efficiency. Although the present disclosure has been disclosed above in the specific preferred embodiment, it is not used In order to limit the present invention, it is intended that the equivalents and modifications of the scope of the present invention should be included in the scope of the present invention. ❹ 16 200935503 Simple illustration of the diagram I The first picture contains photons Schematic diagram of the embodiment 1. 1 Figure 2 shows a photonic crystal with a schematic diagram C > Figure 3 shows a photonic crystal with a schematic diagram ^ > Figure 4 shows a photonic crystal with a schematic diagram c) Figure 5 is a dielectric Swim method electric 6th image electrophoresis _ _ real 7th picture photonic crystal sweep 8th picture photonic crystal sweep

The second real light-emitting diode of the first real light-emitting diode is the second real light-emitting diode. Schematic diagram of the example. Tracing electron microscope photograph Tracing electron microscope photograph [Main component symbol description] 1

11 P-type contact (P-Type Contact) 12 P-Type Semiconductor Layer 13 Active Layer 14 N-Type Semiconductor Layer 15 Photonic Crystal Total Mirror (Photonic Crystal Omni-reflector) 17 200935503 16 Substrate 17 N-Type Contact 2 21 P-type Contact 2 2 P-type semiconductor layer (P - T ype S emic ο nductor Layer) 23 Active Layer 24 N-Type Contact 25 N-Type Semiconductor Layer 26 Photonic Crystal Omni-reflector and Substrate 3 31 P-type contact 32 Photonic Crystal ITO film P-Type Semi-conductor layer 34 Active layer 35N-type semiconductor layer (N- Type Semi conductor Layer) 36 Substrate 37 N-Type Contact 4 18 200935503 41 P-Type Contact 42 Photonic Crystal Window Layer (Photonic Crystal Window fi Lm) 43 P-Type Semiconductor Layer 44 Active Layer 45 N-Type Semiconductor Layer 46 Substrate 47 N-Type Contact 48 Conductive glass layer (Window fi lm) 5 electrophoresis tank 51 conductive handle 5 2 wafer (and can be an electrode) 5 3 micro / nanosphere 5 4 relative to the other electrode 5 5 insulating layer 56 medium 6 electrophoresis tank 61 conductive handle (band Negative power) 6 2 wafer (for negative electrode) 6 3 micro/nano ball 64 positive electrode 6 5 insulating layer 19 200935503

φ 66 medium Fig. 7 is a photomicrograph of a scanning electron microscope of a photonic crystal structure. Figure 8 is a photomicrograph of a scanning electron microscope of a photonic crystal structure. 20

Claims (1)

200935503 X. Patent application scope: 1. A method for manufacturing a light-emitting diode containing a photonic crystal, which is applied to a photodiode structure for preparing a photonic crystal structure, the steps comprising: providing a reaction tank, the mutual formation of the reaction tank Separating the first electrode and the second electrode; providing a liquid medium, the liquid medium is placed in the reaction tank and simultaneously covering the first electrode and the second electrode; and the liquid medium is implanted and distributed a plurality of micro/nano (50 nm~5/zm) uniform particle size particles; a substrate suspended in the liquid medium for electrophoresis and electrically contacting the electrode thereof to make the micro/nanosphere uniform particle size The particles are periodically arranged in a single layer or a plurality of layers and are coated on the surface of the substrate to form a photonic crystal structure. 2. The method of manufacturing a photonic crystal-containing light-emitting diode according to claim 1, wherein the first electrode and the second electrode are respectively disposed at a bottom of the reaction tank and are separated from the bottom portion. Inside the liquid medium. The method for producing a photonic crystal-containing light-emitting diode according to the invention, wherein the composition having micro/nano-average particle particles has an organic monomer polymer. 4. The method for producing a photonic crystal-containing light-emitting body according to the invention, wherein the composition having micro/nano-average particle particles is an oxide containing an inorganic element component. 5. The method for manufacturing a photonic crystal-containing light-emitting diode according to the third aspect of the invention, wherein the substrate is selected from the group consisting of single crystal sled C〇n, polycrystalline silicon, One of amorphous silicon, conductive glass, m_v family, and n_VI element materials. 6. The method of producing a photonic crystal-containing light-emitting diode according to claim 1, wherein the organic monomer polymer is selected from the group consisting of styrene, acrylic acid, and maleic acid. 7. The method for producing a photonic crystal-containing light-emitting diode according to claim 1, wherein the inorganic element oxide is selected from the group consisting of: ceria, titania, dioxins, zinc oxide, oxidation. Ming, or a combination thereof. 8. The method for producing a photonic crystal-containing light-emitting diode according to claim 1, wherein the micro/nano uniform particle size concentration of the particle relative to the liquid medium ranges from 0.5 to 60. Wt %. The method for producing a photonic crystal-containing light-emitting diode according to the first aspect of the invention, wherein the reaction tank is a vertical type, a horizontal type, a tilt type or an electrophoresis tank of another structure and type. The method for producing a photonic crystal-containing light-emitting diode according to the first aspect of the invention, wherein the liquid medium is a liquid phase aqueous solution or a liquid phase organic solution. 11. The method of producing a photonic crystal according to claim 1, wherein the liquid medium has an acidity value of from 1 to 9. 1 1. The method for producing a photonic crystal-containing light-emitting diode according to claim 1, wherein the liquid medium has an operating temperature of from 10 to 150 °C. The method of manufacturing a photonic crystal according to claim 1, wherein the distance between the first electrode and the second electrode is between 0.5 and 50 cm. 12. The method of producing a photonic crystal-containing light-emitting diode according to claim 1, wherein a constant voltage source of a voltage difference of 1 to 1,000 volts is provided outside the reaction vessel. The method of producing a photonic crystal-containing light-emitting diode according to claim 1, wherein the photonic crystal structure is arranged in a two-dimensional (2-D) periodic structure. 14. The method of manufacturing a photodiode according to claim 1, wherein the photonic crystal structure is arranged in a three-dimensional (3-D) periodic structure. The method for manufacturing a photonic crystal-containing light-emitting diode according to claim 1, wherein the photonic crystal can be disposed on a surface window layer, a conductive glass layer, and a photonic crystal total reflection of the light-emitting diode. Mirror layer, substrate layer or any combination of the above. ❹ 24