200933911 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具抗反射層之太陽能電池，尤其 關於一種具有抗反射疊層之太陽能電池。 ’ 【先前技術】 - 太陽能電池是一種能量轉換的光電元件，它是經由 太陽光照射後，把光的能量轉換成電能，此種光電元件 © 稱為太陽能電池（Solar Cell)。從物理學的角度來看， 有人稱之為光伏（Photovoltaic，簡稱PV)電池。 傳統的太陽能電池的製造方式，是先提供一矽基板， 然後在矽基板上進行化學氣相沈積（譬如是PECVD)以形 成抗反射層，然後進行網印以及燒結（co-f iring)，以將 電極形成於抗反射層上。抗反射層的效果決定太陽能電 池的效率。好的抗反射效果可以提高太陽能電池的效率。 反之’不好的抗反射效果會降低太陽能電池的效率。 〇 由於太陽能電池的效率逐漸被提高，因此對於太陽 . 此電池的抗反射效果需要作進一步地增強，藉以滿足此 趨勢之發展。 【發明内容】 因此’本發明之一個目的係提供一種具抗反射層之 太陽能電池，利用抗反射疊層的特殊設計，以有效提高 太1¾此電池的效率。 本發明之另一個目的係提供一種具抗反射層之太陽 6 200933911 能電池，利用抗反射疊層的特殊設計，以保護太陽能電 池之基板，免於空氣中氧氣及水氣的侵蝕，避免太陽能 電池的老化。 為達上述目的，本發明提供一種具抗反射層之太陽 能電池’其包含一基板、一抗反射疊層、一正面電極及 -一背面電極，其中該基板可區分為一正面及一背面，且 • 該基板具有接近背面之一第一型半導體層及接近正面之 一第二型半導體層。抗反射疊層形成於基板之正面上， © 且包含複數個高折射率材料層及複數個低折射率材料 層。此等高折射率材料層及此等低折射率材料層互相交 錯疊置，且此等低折射率材料層之其一位於基板之正面 上，各高折射率材料層之折射率大於各低折射率材料層 之折射率。正面電極係形成於抗反射疊層上，且電性連 接於該第二型半導體層。背面電極係形成於基板之背面， 且電性連接於該第一型半導體層。 為讓本發明之上述内容能更明顯易懂，特舉一較佳 φ 實施例，並配合所附圖式，作詳細說明如下。 【實施方式】 - 以下將參見附圖來說明本發明之實施例。值得注意 的是、，為了避免看不到某些薄層，附圖的各部分結制 尺寸並未依據正常的比例繪製。 圖1顯示依據本發明第—實施例之具抗反射層之太 %能電池之結構示意圖。如圖】所示，本實施例之具抗 反射層之太陽能電池包含一基板1〇、一抗反射疊層2〇、 7 200933911 一正面電極5〇及一背面電極7〇。 基板1〇具有一正面10F及一背面10B，且具有接近 背面10B之一第一型半導體層a及接近正面1 〇F之一第 二型半導體層14。於本實施例中，基板1〇係為一矽基 板。第一型半導體層12及第二型半導體層14係分別為 ' P型半導體層及N型半導體層，或分別為n型半導體層 及P型半導體層。 抗反射疊層20形成於基板1〇之正面1 〇F上，抗反 Ο 射疊層2 0包含複數個高折射率材料層3 0及複數個低折 射率材料層40，此等高折射率材料層30及此等低折射 率材料層40互相交錯疊置，且此等低折射率材料層4〇 之其一位於基板1〇之正面i 〇F上，各高折射率材料層3〇 之折射率大於各低折射率材料層40之折射率。 正面電極50形成於抗反射疊層20上。背面電極70 形成於基板1〇之背面10B。 如圖1所示’此等高折射率材料層3〇包含一第一高 〇 折射率材料層32及一第二高折射率材料層34。此等低 折射率材料層4〇包含一第一低折射率材料層42及一第 • 二低折射率材料層44。第一低折射率材料層42位於基 - 板10之正面10F上，第一高折射率材料層32位於第一 低折射率材料層42上，第二低折射率材料層44位於第 —高折射率材料層32上，第二高折射率材料層％位於 第二低折射率材料層44上，且正面電極5〇位於第二高 折射率材料層34上。 於一例子中，第一高折射率材料層32、第二高折射 8 200933911 率材料層34、笛 7 , a 第—低折射率材料層42及第二低折射率 材料層44可丨, 刀別是第一氮化矽層、第二氮化矽層、篦 一氧化石夕層及笛一匕 第一氧化矽層。第一氧化矽層及第二氧化 矽層各自且女C ^ ，、有5至20奈米之厚度，第一氮化矽層及第二 ’化矽層各自具有7〇至100奈米之厚度。 a圖2顯不依據本發明第二實施例之具抗反射層之太 '能電池之έ士堪-立m 於第一 '、〇構不思圖。如圖2所示，本實施例係類似 、 實施例，不同之處在於太陽能電池更包含一背面 金屬層6°，其形成於該基板10之背面10B，藉以於基板 上形成背面電場（BSF)結構，以便提升太陽能電池 的效率。+ Γ 第一尚折射率材料層32的材料可以是氮 (SiNx)或透明導電氧化物，而第二高折射率材料層 34的材料係為氮化矽（SiNx)。透明導電氧化物之材料係 選自於由氧化鋅(Zn〇)、二氧化锡(Sn〇。或二氧化鈦⑴〇2) 所組成的群組。此外，第__低折射率材料I 42或第二低 ❹ 折射率材料層44的材料可以是氧化_(δί()χ)或其他低折 射率之陶瓷材料。 圖3顯不依據本發明第三實施例之具抗反射層之太 陽能電池之結構示意圖。如圖3所示，本實施例係類似 於第二實施例’不同之處在於材料層32、34、42與44 的排列順序。亦即，第—高折射率材料層32位於基板1〇 之正面1 OF上，第一低折射率材料層42位於第一高折射 率材料層32上’第二高折射率材料層34位於第一低折 射率材料I 42上’第二低折射率材料層44位於第二高 折射率材料層34上，且正面電極5〇位於第二低折射率 9 200933911 材料層44上。當然，各膜層厚度需依實際情形進行調整， 玆不贅述。 圖4顯示依據本發明第四實施例之具抗反射層之太 陽能電池之結構示意圖。如冑4所示，本實施例係類似 於第二實施例，不同之處在於此等高折射率材料層3〇, ' 包含一第一高折射率材料層32、一第二高折射率材料層 34及一第三高折射率材料層36,而此等低折射率材料層 4〇’包含一第一低折射率材料層乜、一第二低折射率材 〇 料層44及一第三低折射率材料層46。 於本實施例中，第一低折射率材料層42位於基板i 〇 之正面1 OF上’第一高折射率材料層32位於第一低折射 率材料層42上，第二低折射率材料層44位於第一高折 射率材料層32上，第二高折射率材料層34位於第二低 折射率材料層44上，第三低折射率材料層46位於第二 局折射率材料層34上，第三高折射率材料層％位於第 三低折射率材料層46上，且正面電極5〇位於第三高折 0 射率材料層36上 圖5顯示依據本發明第五實施例之具抗反射層之太 ’陽能電池之結構示意圖。如圖5所示，本實施例係類似 ' 於第四實施例’不同之處在於材料層32、34、36、42、 44及46的排列順序。詳言之，第_高折射率材料層32 位於基板10之正面10F上，第一低折射率材料層仏位 於第-高折射率材料層32jl，第二高折射率材料層％ 位於第一低折射率材料層42上，第二低折射率材料層44 位於第二高折射率材料層34上’第三高折射率材料層36 200933911 第三低折射率材料層46 且正面電極50位於第 位於第二低折射率材料層44上 位於第二高折射率材料層36上 二低折射率材料層46上。 ❹ 在材料的選擇方面，第 每一個的材料係為氮化矽。 率材料層的材料係為透明導 高折射率材料層的材料係為 射率材料層的材料係為氧化 料。 —至第三高折射率材料層之 或者’各第一與第二高折射 電氧化物或氮化石夕，而第三 氣化石夕。各第一至第三低折 石夕或其他低折射率之陶瓷材 圖6顯示依據本發明之抗反射疊層與習知之抗反射 層之抗反射放果之曲線圖。&圖6所示，曲線U對應於 傳統使用單層抗反㈣的反㈣，㈣G2制於四層抗 反射疊層的反射率，而曲線對應於六層抗反射疊層的 反射率。藉由將具有高低折射率的材料交替疊置，可以 降低抗反射叠層之反射率’也就是提高抗反射疊層之抗 反射率。因此，可以增加太陽能電池之效率。200933911 IX. Description of the Invention: [Technical Field] The present invention relates to a solar cell having an antireflection layer, and more particularly to a solar cell having an antireflection laminate. [Prior Art] - A solar cell is an energy-converting photovoltaic element that converts light energy into electrical energy after being irradiated by sunlight. This photovoltaic element is called a solar cell. From a physics point of view, some people call it Photovoltaic (PV) batteries. Conventional solar cells are manufactured by first providing a substrate and then performing chemical vapor deposition (such as PECVD) on the germanium substrate to form an anti-reflective layer, followed by screen printing and co-f iring. An electrode is formed on the antireflection layer. The effect of the anti-reflective layer determines the efficiency of the solar cell. Good anti-reflection effect can improve the efficiency of solar cells. Conversely, a bad anti-reflective effect will reduce the efficiency of the solar cell. 〇 Since the efficiency of solar cells is gradually improved, the anti-reflection effect of this battery needs to be further enhanced to meet the development of this trend. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a solar cell having an anti-reflective layer that utilizes a special design of an anti-reflective laminate to effectively increase the efficiency of the battery. Another object of the present invention is to provide a solar cell with an anti-reflection layer, which is designed to protect the substrate of a solar cell from the erosion of oxygen and moisture in the air, and to avoid solar cells. Aging. In order to achieve the above object, the present invention provides a solar cell having an anti-reflection layer comprising a substrate, an anti-reflection laminate, a front electrode and a back electrode, wherein the substrate can be divided into a front side and a back side, and • The substrate has a first type semiconductor layer close to the back side and a second type semiconductor layer close to the front side. The anti-reflective laminate is formed on the front surface of the substrate, and includes a plurality of layers of high refractive index material and a plurality of layers of low refractive index material. The layers of the high refractive index material and the layers of the low refractive index material are interlaced with each other, and one of the layers of the low refractive index material is located on the front surface of the substrate, and the refractive index of each of the high refractive index material layers is greater than each of the low refractive indices. Rate the refractive index of the material layer. The front electrode is formed on the anti-reflective layer and electrically connected to the second type semiconductor layer. The back electrode is formed on the back surface of the substrate and electrically connected to the first type semiconductor layer. In order to make the above description of the present invention more comprehensible, a preferred embodiment of φ is described in detail with reference to the accompanying drawings. [Embodiment] - An embodiment of the present invention will be described below with reference to the drawings. It is worth noting that, in order to avoid invisible thin layers, the dimensions of the various parts of the drawing are not drawn according to the normal scale. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a view showing the structure of a solar cell having an antireflection layer according to a first embodiment of the present invention. As shown in the figure, the solar cell with anti-reflection layer of the present embodiment comprises a substrate 1 一, an anti-reflection laminate 2 〇, 7 200933911 a front electrode 5 〇 and a back electrode 7 〇. The substrate 1A has a front surface 10F and a back surface 10B, and has a first type semiconductor layer a close to the back surface 10B and a second type semiconductor layer 14 close to the front side 1 〇F. In the present embodiment, the substrate 1 is a ruthenium substrate. Each of the first semiconductor layer 12 and the second semiconductor layer 14 is a 'P-type semiconductor layer and an N-type semiconductor layer, or an n-type semiconductor layer and a P-type semiconductor layer, respectively. The anti-reflective layer 20 is formed on the front surface 1 〇F of the substrate 1 , and the anti-reflective layer 20 includes a plurality of high refractive index material layers 30 and a plurality of low refractive index material layers 40. The material layer 30 and the low refractive index material layers 40 are alternately stacked on each other, and one of the low refractive index material layers 4 is located on the front surface 〇F of the substrate 1 , and each of the high refractive index material layers 3 The refractive index is greater than the refractive index of each of the low refractive index material layers 40. The front electrode 50 is formed on the anti-reflection laminate 20. The back electrode 70 is formed on the back surface 10B of the substrate 1A. As shown in FIG. 1, the high refractive index material layers 3A include a first high refractive index material layer 32 and a second high refractive index material layer 34. The low refractive index material layer 4A includes a first low refractive index material layer 42 and a second low refractive index material layer 44. The first low refractive index material layer 42 is on the front side 10F of the base plate 10, the first high refractive index material layer 32 is on the first low refractive index material layer 42, and the second low refractive index material layer 44 is on the first high refractive index. On the rate material layer 32, the second high refractive index material layer % is on the second low refractive index material layer 44, and the front surface electrode 5 is on the second high refractive index material layer 34. In one example, the first high refractive index material layer 32, the second high refractive index 8 200933911 rate material layer 34, the flute 7, the a-low refractive index material layer 42 and the second low refractive index material layer 44 may be It is not the first tantalum nitride layer, the second tantalum nitride layer, the niobium monoxide layer and the flute-first layer of tantalum oxide. The first ruthenium oxide layer and the second ruthenium oxide layer each have a thickness of 5 to 20 nm, and the first tantalum nitride layer and the second 'ruthenium oxide layer each have a thickness of 7 〇 to 100 nm. . A Fig. 2 shows that the anti-reflection layer of the second embodiment of the present invention is too "the battery can be used in the first", and the structure is not considered. As shown in FIG. 2, the present embodiment is similar to the embodiment, except that the solar cell further includes a back metal layer 6° formed on the back surface 10B of the substrate 10, thereby forming a back surface electric field (BSF) on the substrate. Structure to enhance the efficiency of solar cells. + Γ The material of the first refractive index material layer 32 may be nitrogen (SiNx) or a transparent conductive oxide, and the material of the second high refractive index material layer 34 is tantalum nitride (SiNx). The material of the transparent conductive oxide is selected from the group consisting of zinc oxide (Zn〇), tin dioxide (Sn〇 or titanium dioxide (1)〇2). Further, the material of the __low refractive index material I 42 or the second low yttrium refractive index material layer 44 may be an oxidized _(δ ί() χ) or other low refractive index ceramic material. Fig. 3 is a schematic view showing the structure of a solar cell having an antireflection layer according to a third embodiment of the present invention. As shown in Fig. 3, the present embodiment is similar to the second embodiment in that the order of arrangement of the material layers 32, 34, 42 and 44 is as follows. That is, the first high refractive index material layer 32 is located on the front surface 1 OF of the substrate 1 , and the first low refractive index material layer 42 is located on the first high refractive index material layer 32. A second low refractive index material layer 44 on a low refractive index material I 42 is on the second high refractive index material layer 34, and the front side electrode 5 is located on the second low refractive index 9 200933911 material layer 44. Of course, the thickness of each film layer needs to be adjusted according to the actual situation, and will not be described again. Fig. 4 is a view showing the structure of a solar cell having an antireflection layer according to a fourth embodiment of the present invention. As shown in FIG. 4, this embodiment is similar to the second embodiment except that the high refractive index material layer 3', includes a first high refractive index material layer 32, and a second high refractive index material. a layer 34 and a third high refractive index material layer 36, and the low refractive index material layer 4'' comprises a first low refractive index material layer 一, a second low refractive index material 层 layer 44 and a third Low refractive index material layer 46. In the present embodiment, the first low refractive index material layer 42 is located on the front surface 1 OF of the substrate i ' 'the first high refractive index material layer 32 is located on the first low refractive index material layer 42 , and the second low refractive index material layer 44 is on the first high refractive index material layer 32, the second high refractive index material layer 34 is on the second low refractive index material layer 44, and the third low refractive index material layer 46 is on the second local refractive index material layer 34. The third high refractive index material layer % is located on the third low refractive index material layer 46, and the front surface electrode 5 is located on the third high refractive index material layer 36. FIG. 5 shows the anti-reflection according to the fifth embodiment of the present invention. The structure of the layer is too 'yang energy battery. As shown in Fig. 5, this embodiment differs from the fourth embodiment in the order in which the material layers 32, 34, 36, 42, 44 and 46 are arranged. In detail, the first high refractive index material layer 32 is located on the front surface 10F of the substrate 10, the first low refractive index material layer is located on the first high refractive index material layer 32jl, and the second high refractive index material layer is located at the first low level. On the refractive index material layer 42, the second low refractive index material layer 44 is located on the second high refractive index material layer 34 'the third high refractive index material layer 36 200933911 the third low refractive index material layer 46 and the front electrode 50 is located at the first The second layer of low refractive index material 44 is on the second layer of low refractive index material 46 on the second layer of high refractive index material 36.第 In terms of material selection, each of the materials is tantalum nitride. The material of the rate material layer is a transparent conductive material of the high refractive index material layer, and the material of the radiance material layer is an oxidant. - to the first or second high refractive electrical oxide or nitride of the third high refractive index material layer, and the third gasification stone. Each of the first to third low-fold stone or other low-refractive-index ceramic materials Fig. 6 is a graph showing the anti-reflection effect of the anti-reflection laminate according to the present invention and a conventional anti-reflection layer. & As shown in Fig. 6, the curve U corresponds to the inverse of the conventional four-layer anti-inverse (four), (iv) the reflectivity of the G2 in the four-layer anti-reflective laminate, and the curve corresponds to the reflectance of the six-layer anti-reflective laminate. By alternately stacking materials having high and low refractive indices, the reflectance of the antireflective laminate can be reduced, i.e., the antireflection of the antireflective laminate can be improved. Therefore, the efficiency of the solar cell can be increased.
圖7顯示依才康本發明第六實施例之具抗反射層之太 陽能電池之結構示意圖。如目7所示，本實施例之太陽 能電池包含一矽基板10、一第一氮化矽層42、一第一氧 化矽層32、一第二氮化矽層44、一正面電極5〇及一背 面電極7 0。 矽基板ίο具有一正面10F及一背面1〇B。矽基板1〇Fig. 7 is a view showing the structure of a solar cell having an antireflection layer according to a sixth embodiment of the invention. As shown in FIG. 7, the solar cell of the present embodiment includes a germanium substrate 10, a first tantalum nitride layer 42, a first tantalum oxide layer 32, a second tantalum nitride layer 44, and a front electrode 5 A back electrode 70. The substrate ίο has a front surface 10F and a back surface 1 〇 B.矽 substrate 1〇
具有接近背面10B之一 p型半導體層12及接近正面1〇F 之一 N型半導體層14。N型半導體層14及卩型半導體層 12亦可以對調。 11 200933911 第一氮化矽層42位於矽基板1〇之正面i〇f上。第 -氧化…2位於第一氮化石夕層42上。第二氣化石夕層 44位於第-氧化石夕層32上。正面電極5〇形成於第二氮 化石夕層44上，且電性連接於N型半導體層14。背面電 極70形成於矽基板10之背面1〇β，且電性連接於p型 半導體層12。 此外，本實施例之太陽能電池可以更包含一背面金 屬層60’其形成於石夕基板10之背面1〇B，藉以於基板ι〇 ❹There is a p-type semiconductor layer 12 close to one of the back surface 10B and an N-type semiconductor layer 14 close to the front side 1F. The N-type semiconductor layer 14 and the 卩-type semiconductor layer 12 can also be reversed. 11 200933911 The first tantalum nitride layer 42 is located on the front side i〇f of the tantalum substrate 1〇. The first - oxidized ... 2 is located on the first layer of nitride layer 42. The second gasification layer 44 is located on the first layer of the oxidized stone layer 32. The front electrode 5 is formed on the second silicon nitride layer 44 and electrically connected to the N-type semiconductor layer 14. The back electrode 70 is formed on the back surface 1?? of the germanium substrate 10, and is electrically connected to the p-type semiconductor layer 12. In addition, the solar cell of the present embodiment may further include a back metal layer 60' formed on the back surface 1B of the Shishi substrate 10, whereby the substrate 〇 ❹
上形成-背面電場_結構，以便提升太陽能電池的效 率 〇 〇 圖8顯*依據本發明第七實施例之具抗反射層之太 陽能電池之結構示意圖。如圖8所示，本實施例係類似 於第六實施例，不同之處在於第—氧切I 32位於石夕基 板10之正面IDF _L ’第—氮化妙層42位於第—氧化梦 層32上’一第二氧化矽層34位於第一氮化矽層上， 而正面電極50形成於第二氧化矽層34上。 a圖9顯不依據本發明第八實施例之具抗反射層之太 :忐電池之結構示意圖。如® 9所示，本實施例之太陽 能電池包含一矽基板1〇、一第一氮化矽層42、一第一氧 化夕層32、一第二氮化矽層44、一第二氧化矽層34、 第—氮化矽層46、一正面電極50及一背面電極γ〇， 亦可以更包含-背面金屬層60。 矽基板10具有—正面10F及一背面10B。矽基板10 具^接近背面⑽之―p型半導體層12及接近正面i〇F 之N型半導體層14〇Ν型半導體層"及p型半導體層 12 200933911 1 2亦可以對調。 氮化矽層42位於矽基板1〇之正面1〇F上 氧化石” 32位於第一氮化梦層42上。第二氮二層The upper-back surface electric field_structure is formed to enhance the efficiency of the solar cell. Fig. 8 is a schematic view showing the structure of a solar cell having an antireflection layer according to a seventh embodiment of the present invention. As shown in FIG. 8, this embodiment is similar to the sixth embodiment, except that the first-oxygen cut I 32 is located on the front side of the Shixi substrate 10, IDF_L', and the first layer is located on the first-oxidation layer. On the 32', a second ruthenium oxide layer 34 is on the first tantalum nitride layer, and the front surface electrode 50 is formed on the second ruthenium oxide layer 34. A is a schematic view showing the structure of the anti-reflection layer according to the eighth embodiment of the present invention. As shown in FIG. 9, the solar cell of the embodiment comprises a substrate 1 , a first tantalum layer 42 , a first oxide layer 32 , a second tantalum layer 44 , and a second tantalum oxide layer. The layer 34, the first tantalum nitride layer 46, the front surface electrode 50, and the back surface electrode γ〇 may further include a back metal layer 60. The crucible substrate 10 has a front surface 10F and a back surface 10B. The 矽 substrate 10 has a p-type semiconductor layer 12 close to the back surface (10) and an N-type semiconductor layer 14 〇Ν-type semiconductor layer close to the front surface 〇F and a p-type semiconductor layer 12 200933911 1 2 can also be reversed. The tantalum nitride layer 42 is located on the front surface 1〇F of the tantalum substrate 1 . The oxide “32” is located on the first nitride layer 42. The second nitrogen layer
位於第-氧化矽層32上。第二氧化矽層34位於第二 夕層44上。第二氮化矽層46位於第二氧化矽層34 上。正面電極50形成於第三氮化矽層46上，且電性 接於N型半導體層14。背面電極7〇形成於矽基板之 背面10B，且電性連接於p型半導體層12。背面金屬層 60开》成於石夕基板10之背面10B。 b圖10顯示依據本發明第九實施例之具抗反射層之太 陽能電池之結構示意圖。如1〇所示，本實施例係類似 ;第八實施例’不同之處在於第一氧化矽I 32位於矽基 板10之正面1GF ’第—氮切層42位於第—氧化石夕 層32上’第二氧化石夕層34位於第一氮化石夕層42上，第 二氮化矽層44位於第二氧化矽層34上，一第三氧化 層^位於第二氮切層44上，而正面電極5()形成於第 二氧化梦層36上。 '综上所述，藉由交替堆疊具有高、低折射率材料層， 可以有效提升抗反射叠層夕好拓如从电. 切蹩赝之抗反射效果，藉以提升太陽 能電池之效率。 在較佳實施例之詳細說明中所提出之具體實施例僅 用以方便說明本發明之技術内容，而非將本發明狹義地 限制：上述實施例’在不超出本發明之精神及以下申請 專利粑圍之情況’所做之種種變化實施，皆屬於本發明 之範圍。 13 200933911 【圖式簡單說明】 圖 顯示依據本發明第一實施例之具抗反射層之太 陽能電池之結構示意圖。 圖2顯示依據本發明第二實施例之具抗反射層之太 陽能電池之結構示意圖。 圖3顯示依據本發明第三實施例之具抗反射層之太 陽能電池之結構示意圖。 圖4顯示依據本發明第四實施例之具抗反射層之太 ❹ 能電池之結構示意圖。 圖5顯示依據本發明第五實施例之具抗反射層之太 陽能電池之結構示意圖。 圖6顯示依據本發明之抗反射疊層與習知之抗反射 層之抗反射效果之曲線圖。 圖7顯示依據本發明第六實施例之具抗反射層之太 陽能電池之結構示意圖。 圖8顯示依據本發明第七實施例之具抗反射層之太 陽能電池之結構示意圖。 圖9顯示依據本發明第八實施例之具抗反射層之太 • 陽能電池之結構示意圖。 • 圖10顯示依據本發明第九實施例之具抗反射層之太 陽能電池之結構示意圖。 14 200933911 【主要元件符號說明】 1 〇 :基板 10B :背面 10F :正面 12:第一型半導體層 14:第二型半導體層 20 :抗反射疊層 30、30’ ：高折射率材料層 φ 32 :第一高折射率材料層 34 :第二高折射率材料層 36 :第三高折射率材料層 40、40’ ：低折射率材料層 42 第 一 低折 射 率 材 料層 44 第 二 低折 射 率 材 料層 46 第 二 低折 射 率 材 料層 50 正 面 電極 60 背 面 金屬 層 70 背 面 電極 15Located on the first yttria layer 32. The second hafnium oxide layer 34 is on the second layer 44. The second tantalum nitride layer 46 is on the second tantalum oxide layer 34. The front electrode 50 is formed on the third tantalum nitride layer 46 and electrically connected to the N-type semiconductor layer 14. The back surface electrode 7 is formed on the back surface 10B of the germanium substrate, and is electrically connected to the p-type semiconductor layer 12. The back metal layer 60 is formed on the back surface 10B of the Shixi substrate 10. Fig. 10 is a view showing the structure of a solar cell having an antireflection layer according to a ninth embodiment of the present invention. As shown in FIG. 1 , the present embodiment is similar; the eighth embodiment is different in that the first yttrium oxide I 32 is located on the front side of the ruthenium substrate 10 and the first nitrogen smear layer 42 is located on the first oxidized layer 32. 'The second oxidized layer 34 is located on the first lanthanum layer 42, the second tantalum layer 44 is on the second yttria layer 34, and a third oxidized layer is located on the second nitriding layer 44. The front electrode 5 () is formed on the second oxidized dream layer 36. In summary, by alternately stacking layers of high and low refractive index materials, the anti-reflective laminate can be effectively improved, such as the anti-reflection effect of electricity, and the efficiency of the solar cell can be improved. The specific embodiments described in the detailed description of the preferred embodiments are merely intended to illustrate the technical scope of the present invention, and are not intended to limit the invention narrowly. It is within the scope of the invention to carry out various changes made by the circumstances. 13 200933911 BRIEF DESCRIPTION OF THE DRAWINGS Fig. is a schematic view showing the structure of a solar cell having an antireflection layer according to a first embodiment of the present invention. Fig. 2 is a view showing the structure of a solar cell having an antireflection layer according to a second embodiment of the present invention. Fig. 3 is a view showing the structure of a solar cell having an antireflection layer according to a third embodiment of the present invention. Fig. 4 is a view showing the structure of a solar cell having an antireflection layer according to a fourth embodiment of the present invention. Fig. 5 is a view showing the structure of a solar cell having an antireflection layer according to a fifth embodiment of the present invention. Fig. 6 is a graph showing the antireflection effect of the antireflection laminate according to the present invention and a conventional antireflection layer. Fig. 7 is a view showing the structure of a solar cell having an antireflection layer according to a sixth embodiment of the present invention. Fig. 8 is a view showing the structure of a solar cell having an antireflection layer according to a seventh embodiment of the present invention. Fig. 9 is a view showing the structure of a solar cell having an antireflection layer according to an eighth embodiment of the present invention. Fig. 10 is a view showing the structure of a solar cell having an antireflection layer according to a ninth embodiment of the present invention. 14 200933911 [Description of main component symbols] 1 〇: substrate 10B: back surface 10F: front surface 12: first type semiconductor layer 14: second type semiconductor layer 20: anti-reflection layer 30, 30': high refractive index material layer φ 32 : a first high refractive index material layer 34 : a second high refractive index material layer 36 : a third high refractive index material layer 40 , 40 ′ : a low refractive index material layer 42 a first low refractive index material layer 44 a second low refractive index Material layer 46 second low refractive index material layer 50 front electrode 60 back metal layer 70 back electrode 15