TW200924228A - Polarized light emitting device - Google Patents

Abstract

A polarized light emitting device includes a substrate and a semiconductor stack structure. The semiconductor stack structure is disposed on the substrate, having at least a first region and a second region. The second region has a photonic crystal structure. The first region generates a light source. After the light source travels through the photonic crystal structure, a polarized light is produced.

Description

200924228 rjlοι w 25805twf.doc/π IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting element that can emit polarized light. [Prior Art] Among optical systems that require a polarized light source, in order to allow a general non-polarized light source to be controlled at a component that controls a single polarized light, it is necessary to incorporate a polarization converter in the optical design so that the light source has The specific polarization is in the P direction, but this not only occupies space in the design of the optical system, but only half of the light after the polarization conversion is utilized by the elements that control the single polarized light. Another conventional technique also utilizes photonic crystals to produce polarized light. — A photonic crystal structure layer in which an elliptical hole is provided in the light-emitting diode. Fig. 1 is a schematic view showing the structure distribution of a conventional photonic crystal structure. Referring to Fig. 1, the photonic crystal structure has some photonic crystal distribution patterns 100a, 100b, 100c, and the cross-sectional shape of each photonic crystal is elliptical. Since the photonic crystal structure penetrates or reflects depending on the ϋ of the incident light polarization direction, the light penetrating the photonic crystal structure has the characteristics of polarized light. Therefore, when the luminescent layer under the photonic crystal structure layer emits light, the light is reflected or penetrated by the photonic crystal structure layer due to its own polarization direction. The transmitted light will have a polar characteristic. The reflected light, after being reflected by the reflective layer, is again penetrated from the photonic crystal structure layer and repeatedly recycled. The elliptical photonic crystal hole plus the reflective layer in the luminescent diode crystal forms a photo-circulation mechanism that causes the emitted light to have an extremely characteristic property. 200924228 rDiyounsiw 25805twf.doc/n However, the industry continues to develop light-emitting components with polarization effects, seeking a variety of different designs. SUMMARY OF THE INVENTION The present invention provides a polarized light-emitting element comprising a substrate and a light-emitting semiconductor stack structure. The semiconductor stack structure has at least a first region and a second region on the substrate, wherein the second region has a photonic crystal structure, and the first region generates a light source, and the light source passes through the photonic crystal structure to generate a polarized light. The present invention provides a polarized light-emitting element comprising a substrate and a semiconductor stacked structure. The semiconductor stack structure has a plurality of strip regions on the substrate, wherein at least one photonic crystal structure is between the strip regions. Although a light source that is generated passes through a waveguide structure to reach the photonic crystal structure, it is taken out and has polarization characteristics. The present invention provides a polarized light-emitting element comprising a substrate and a stacked, stacked structure. The semiconductor stack structure has at least one canine exit block layer on the substrate. There is a photonic crystal structure on the protruding block layer. A polarized light is generated when a light source that is generated by 行 passes through the photonic crystal structure. One invention provides a polarized light-emitting element comprising a substrate and a semiconductor stack structure. The semiconductor stack structure has a plurality of protruding regions on the substrate, and the layers are formed-arrayed. Each of the protruding block layers has a photonic crystal, and the '° structure is converted into a polarization when the generated light source passes through the photonic crystal structure. Light. In order to make the present invention more apparent, the following detailed description of the embodiments and the accompanying drawings are set forth below. 200924228 FMyt,uii81W 25805twf.doc/n [Embodiment]

The invention proposes a light-emitting element having a polarization characteristic, for example, which can be applied to an optical system requiring a polarized light source. The polarized light of the illuminating element can be used directly without the use of polarization. Or, the polarized hair piece is matched with the polarization test, which can greatly reduce the loss of the light source. The following examples are given to illustrate the invention, but the invention is not limited to a single single embodiment, and the embodiments are appropriately combined with each other. The present invention can utilize the design of the waveguide structure, the platform structure and the photonic crystal structure to produce a polarization enthalpy. This polarized light-emitting element can be applied, for example, to a related range such as a projection display. The invention provides a light-emitting element with polarized light, comprising an electrode, a photonic crystal and a waveguide structure. According to the wavelength of the launching member, the size, shape and period, radius, depth, lattice and arrangement of the photonic crystal are simultaneously designed to control the light-emitting area and the thickness and position of the semiconductor stack structure. The light emitted from the light-emitting element has polarization characteristics. Regarding the design of photonic crystals, the present invention has made intensive research on the characteristics of photonic crystals, and found that the lattice structure of the photonic crystal and the direction of the incident light are related to the intensity of the light extraction. 2 is a schematic diagram showing coordinates of a photonic crystal structure and an incident light direction corresponding to a space of [^=2π/λ) according to an embodiment of the present invention. Referring to Fig. 2', the photonic crystal structure is composed of a plurality of photonic crystals 11, for example, a hexagonal symmetry lattice 112. It has been found that the incident plane light 106 is in the lattice! ^]^ direction, from the photonic crystal structure 200924228 F51 y 6ϋ 1181 W 25805twf.doc/n The intensity of the light taken by the square will be the largest. FIG. 3 is a schematic diagram showing the verification of the angle of incidence of light and the degree of polarization of light. Referring to Figure 3, as a twist in the direction of the ΓΜ, the incident light will have a significant light extraction effect in the direction of the twist and 30 degrees. Since the light passes through a waveguide, the light is close to the plane wave, and the generated light source is dominated by the mode, so that the polarization direction of the light is aligned according to the direction perpendicular to the direction of propagation of the light. A strong light extraction with a degree of 3 degrees will give the light a significant polarization effect. The present invention also uses this mechanism to design a polarized light-emitting element, such as a polarized hair-emitting diode element. 4 is a schematic diagram showing the illumination mechanism of a polarized light-emitting element according to a waveguide mode according to an embodiment of the invention. Referring to Figure 4, for illumination source 118 of illumination region U4, the light it emits is laterally directed into region 116 having photonic crystal structure 122. For example, a reflective layer 12 can be further disposed to avoid leakage of light, and this portion of the light is allowed to be reused. Light taken from above the photonic crystal structure ϋ 122 has a polarization effect. Figure 5 ♦ shows the generation mechanism of planar light. Since the neon light source 118 is emitted, it will become planar light 124 after passing through the segment distance. This planar light 124 has a polarization effect by the light obtained above the side ' secret region 116 of the photonic structure 122 as previously described. - Figure 6 is expected to be invented by the county - the real way, the way of the waveguide _ the use of cattle is not bad. Referring to Fig. 6, a more specific polarization device hereinafter includes a substrate 200, a semiconductor stack structure 2, a second electrode layer 206, and a second electrode layer. Semiconductor stack 200924228 〇iy〇uu«i w 25805twf.doc/n On the substrate 200, there are at least a first region and a second region. The domain has a photonic crystal structure 212. The second electrode layer and the first - thunder '" should constitute a light-emitting element. In the present embodiment, for example, the second electrode layer, the common 'and the two first electrode layers 2'6 constitute two light-emitting units, and the first region has the light-emitting unit 210. Fig. 7 is a green schematic view showing a section along W in Fig. 6. FIG. 7 is a semiconductor stacked structure 2〇2 of the present embodiment, for example, a diode structure including a stack of an active light-emitting layer 222, a first conductive type semiconductor layer, and a second conductive type semiconductor layer Μ4. structure. The first conductive layer 220 is, for example, an n-conductive semiconductor layer, and a second conductive = c.-type rotating layer. On the other hand, the first conductivity type can also be a conduction type, and the first conductivity type is an n conductivity type. The corresponding electrodes 206 and 2G8 are on the corresponding conductivity type. The corresponding electrode may be located on the same side or on the side of the light-emitting element crystal, and the active green light is implanted in the n-type semiconductor and the p-type half-energy electrode to cause the active light-emitting layer to emit light. The semiconductor stack is most preferably formed on a substrate, and the material thereof may be, for example, a ffi v group or a fine semiconductor material such as n-GaN and p-GaN. The material of the substrate 2 is not limited to a specific material, for example, a metal, a sapphire crystal, Sd GMs, GaP, or A1N. Alternatively, an ohmic electrode layer may be applied over the second V-body stack structure 202 to the second conductivity type semiconductor layer slave. Electrically "on the first conductive semiconductor layer 22 of the semiconductor stacked structure 202. 2^ by applying appropriate forward bias voltages to the electrodes 206 and 208, the X-pole emits light" and is guided by the waveguide structure 228. Photonic crystal junction 200924228 «lyfXJUSiW 25805twf.doc/n structure 212. The photonic crystal structure 212', for example, forms a recess for the semiconductor stacked structure 2〇2. It is formed, for example, by lithography. The waveguide structure 228 has a waveguide direction. 230, the light is directed toward the photonic crystal structure 212. The electrode layer 208 of the present embodiment is shared, for example, with the electrode layers 2?6 on both sides, respectively forming a light-emitting element' to increase the amount of light taken. For manufacturing, for example, in the substrate formation Having a worm crystal structure of η__22〇, active light-emitting layer 222 and P-GaN 224, the distance from n_GaN 22() to substrate 2〇〇 is less than the distance of 2p of p_GaN224, active light layer parity = n-GaN 220 and Between P-GaN 224. On p_GaN 224, a layer of material can be fabricated by chemical vapor deposition (CVD), such as SiOx or SiNx #, and the photoresist process includes photoresist. Coated here_ Read 'Listen interferometric Xuan beam lithography or photolithography photonic crystals made in the manner of a cap-shirts __ Next Toru embodiment photonic crystal side off the cause of action to resist the transfer of a chemical vapor deposition produced

After the material is transferred to the stacked structure of GaN through the side, the process can form the photonic crystal structure in the active light emitting layer 222 or the active light emitting layer 222 in the germanium light emitting diode. The length of the crystal region f in the lateral direction is, for example, 9 Gm. Finally, p-type germanium and n-type mats were fabricated on the electrodes (10) and n-(iv) as electrode layers. In the case where the photoresist = the pattern of the photonic crystal is produced, the area of the desired electrode can be reserved by means of I photolithography. This region does not make a photonic crystal, and is formed, for example, between ρ and PGaN. A transparent ohmic contact layer 226, such as NiO or Ni/Au. 200924228 P51%U118TW 25805twf.doc/np The active light-emitting layer 222 under the electrode 206 emits light, and the light reflects in the epitaxial structure or the substrate to form the waveguide mode to support the waveguide mode propagation. The epitaxial structure or substrate is the waveguide structure 228. If the photonic crystal is fabricated in the substrate, the waveguide mode in the substrate can be taken out by the photonic crystal. Since the light emitted by the active light-emitting layer 222 is mostly TE mode, the light propagates along the horizontal axis (y-axis) in the waveguide structure. The polarization direction is on the x-axis (TEx light). When this light propagates to the photonic crystal region, the photonic crystal will take out the light and maintain its polarization on the original X-axis, thus making the light-emitting diode Has the characteristics of polarization. Further, the lattice pattern of the photonic crystal structure 212 may include, for example, a quadruple symmetry, a sixfold symmetry, a rectangular lattice, a periodic alignment structure, a multiple periodic alignment structure, a quasi-periodic structure, or a non-periodic structure. The structure of the crystal unit of the photonic crystal structure 212, for example, in addition to the structure of the pores, for example, may be columnar, tapered, continuous uneven, discontinuous, or a combination of several of them. The cross-sectional shape of the crystal unit may be polygonal, circular or elliptical or the like. Further, in order to increase the light-emitting area to increase the light-emitting intensity of the light-emitting diode, the transparent ohmic contact layer may extend to the surface of the p-GaN 224 of the photonic crystal region. Fig. 8 shows the schematic diagram of the cross section of the polarized light-emitting element. Referring to Figure 8, the structure of this embodiment is similar to that of Figure 7, however, the contact layer 226 extends to the area of the photonic crystal structure 212. In other words, the area of the photonic crystal structure 212 also illuminates. Further, in combination with the thickness and size of the crystal structure, the light-emitting layer can emit only a mode light having a specific polarization direction, so that the light-emitting reduction can emit high-intensity polarized light. 200924228 F^iyouniSiw 25805twf.doc/n Also, in design, the number of modalities that can exist in a waveguide structure can be determined by several parameters. For example, 'symmetry; when the thickness of the sheath structure is d, the number of modes that can exist in the waveguide structure is: M=2*(d/ λ 〇)*ΝΑ > λ〇 is the wavelength of light in vacuum, ΝΑ is the numerical aperture. Furthermore, in order to increase the effect of the waveguide, the light propagating along the y-axis is increased, and a distributed Bragg mirror can be added to the light-emitting diode (Distributed)

The structure of Bragg Reflector ’ DBR). Figure 9 is a cross-sectional view showing a polarized light-emitting element in accordance with another embodiment of the present invention. Referring to FIG. 9, after the active light-emitting layer 222 under the electrode 206 emits light, the 'DBR structure layer 232 causes most of the light to propagate along the y-axis' and the polarization of the light propagating along the y-axis is on the X-axis (TEx light). ). When this light propagates into the photonic crystal region, the photonic crystal takes out the light and maintains its original polarization on the x-axis, and increases the intensity of the polarized light of the light-emitting diode due to the increase in light propagating along the 丫 axis. Figure 10 is a cross-sectional view showing a polarized light-emitting element in accordance with an embodiment of the present invention. Referring to Fig. 10', in order to increase the light-emitting area to increase the light-emitting intensity of the light-emitting diode, the transparent ohmic contact layer 226 may be extended to the surface of the layer DBR structure layer 232 above the photonic crystal region. At this time, the active light-emitting layer 222 under the transparent ohmic contact layer can emit light. Combined with the thickness and size of the epitaxial structure, the active light-emitting layer can emit only the light of the j-state with a specific polarization direction, so that the light-emitting diode can emit high-intensity polarized light. In addition, a reflective structure can be added to the side of the opposite direction of the waveguide, such as a photonic structure with reflection characteristics, thereby reducing the light scattered by the side surface and increasing the light transmitted in the waveguide direction. The light-emitting body of the present invention can be fabricated as a light source having a large light-emitting area, for example. Figure 11 is a perspective view of a polarized light-emitting element in accordance with an embodiment of the present invention. Referring to Fig. 11 'This embodiment differs from the previous embodiment in that the number of electrodes on the y-axis is increased and the width of the photonic crystal region on the y-axis is reduced.

During the process of O j , when the light enters the photonic crystal region, part of the sub-crystals are lion di, so 'when the light continues to propagate in the photon domain, the photonic crystal structure will continuously take out the light propagating in the waveguide structure. So that the light propagates stray light _ far away from the tree, the photon crystal can be taken out of the light intensity that can be taken out. Therefore, the size of the photonic crystal region of the design is appropriate and the appropriate electro-optic wire is added to increase the polarization of the hair-emitting cake. Therefore, the present embodiment has three η electrode thin disks of three Ρ = 2〇6, which constitute a plurality of light-emitting units. And the length of the electrode crystal structure 212 in the y-axis direction is, for example, for the active light-emitting layer under the material=electricity 6 to emit light, thereby increasing the area of the first light, and the second electrode is propagated from the p-electrode to the second-order of the n-electrode; =: Figure 2: Figure 15 shows the cross-sectional structure of the ΙΙ-ΙΙ according to the invention. FIG. 12 is similar to the structure of FIG. 11 and the number of light-emitting units is changed, but the size is easy to reach the required area and quality of the polarized light source, and further extends to the photonic crystal structure 212. 4 is a transparent ohmic contact layer 226 structure 212. Referring to Figure 14, the structure of the DBR layer 232 13 200924228 P5196011STW 25S05twf.doc/n is added. Referring to Figure 15', for example, a 5 ft layer 232 is provided and a transparent ohmic contact layer 226 is extended to the photonic crystal structure 212. The present invention can also design a light-emitting element in a platform structure. 16A-16B are a perspective view and a top view showing the structure of a light emitting element of a platform structure. Referring to Fig. 16A, a platform-type polarized light-emitting element includes a substrate 3, a half conductor stack 304, a -electrode layer 3〇6, and a second electrode layer 308. The semiconductor stacked structure 3〇4 is formed on the substrate 3, and includes an f\dog-out block layer 305. The protruding block layer 305 has a photonic crystal structure 310 thereon. The first electrode layer 3〇6 is on the protruding block layer 3〇5. The second electrode layer 308 is disposed on the 302 of the semiconductor stacked structure 304 and located at an edge of the protruding block layer 305 to form a light-emitting element 312 corresponding to the first electrode layer 3?. The protruding block layer 3〇5 is also referred to as the platform 7丨 for blood-free 305. Hereinafter, the first electrode layer 306 is, for example, a p-electrode as an embodiment, and the =electrode layer 3〇8 is, for example, an n-electrode as an embodiment. The light emitted by the active light-emitting layer of the semiconductor stack, the alpha structure, is guided by the platform structure and I (4) causes the light to propagate along the x-axis direction. After 16 Β, when the current is injected by the electrode, the active luminescent layer under the ρ electrode 306 emits light, and the light ray reflects the waveguide mode in the platform structure due to the difference in the refractive index of the interface. The platform structure 3〇5 supporting the waveguide mode propagation may comprise a insect crystal structure or a substrate. If the photonic crystal is used to protect the substrate, the female (four) waveguide mode can be taken out by the photonic crystal. In the platform structure 3G5, since the shirt emitted by the active light-emitting layer 32〇 is in the TE mode, the polarities of the waves propagating along the 4 are on the y-axis (TEy light) ’ when the light propagating along the x-axis enters the light? Crystal region 14 200924228 ^5iy6uii8iw 25805twf.d〇c/n, the subcrystal will take out the light and maintain the polarization direction on its original axis, thus the polar body has polarization characteristics. In addition, by adjusting the size (a and b) and shape of the light t-body region, the structure of the photonic crystal, the electrode (c and Φ, and the shape and the correlation between the electrode and the photonic crystal) First-to-be-polarized miscellaneous. For example, each-self-junction-like or truncated=cone-shaped' has a size of, for example, a width of between about 5 and a micron and a length of between about 〇=〇〇〇 micron. The height is about 1 Gm or less. The actual size depends on f. In addition, in order to increase the light-emitting area to increase the light-emitting intensity of the light-emitting diode, the transparent ohmic contact layer can extend to the P- of the photonic crystal region as described above. GaN surface. At this time, the active luminescent layer under the transparent ohmic contact layer can be made with the thickness, size and shape of the platform structure 3〇5, so that the main luminescent layer can only emit a mode with a specific polarization direction. The light of the state, therefore, emits light, and the body can emit (4) intensity of polarized light. Furthermore, in order to enhance the effect of the waveguide, the light propagating the X-axis is increased, and a junction can be added to the light-emitting diode. After the active light-emitting layer under the electrode emits light, The DBR structure is such that: t-number of light material is broadcast along X _, and the polarization direction along the X secret level

On the Wy axis (TEy light), when this light propagates to the photonic crystal region, the photonic crystal will take out the wire and maintain its original polarization direction. Therefore, the light propagating along the X axis in the flat structure increases, so the hair is also increased. The intensity of the polar light of the force diode. In addition, in order to increase the hair product to increase the light intensity of the light-emitting diode, the transparent ohmic contact layer can extend to the surface of the upper layer DBR of the smear field, and the active luminescent layer under the transparent ohmic contact layer can emit light. In combination with the thickness, size and shape of the platform, the active luminescent layer can only emit modal light with a specific polarization direction, so the illuminating diode can emit high intensity. Polarized light. In addition, a reflective structure such as a photonic crystal structure having a reflective property can be added to the side opposite to the waveguide, thereby reducing the light scattered by the side surface while increasing the light propagating in the waveguide direction. In particular, Figure 17 is a perspective view of a platform-type polarized light-emitting element in accordance with an embodiment of the present invention. Referring to Fig. 17, a plurality of light-emitting elements 312 may be disposed on the substrate 300. The semiconductor stack structure 304 is formed on the substrate 300, and includes a first conductive type semiconductor layer 302 and a protruding block layer 305, wherein the first conductive type semiconductor layer 3〇2 has a plurality of protruding block layers 3〇5. distributed. Each of the protruding block layers 305 has a photonic crystal structure 310 thereon. The first electrode layer 3〇6 is on each of the protruding block layers 3〇5. The second electrode layer 308 is located on the 3〇2 of the semiconductor stacked structure 3〇4 at an edge of the protruding block 305 corresponding to the first electrode layer 3〇6 to constitute a light emitting unit. * (FIG. 18 illustrates a cross-sectional structure diagram along the Ill-Ill " line of FIG. 17 according to an embodiment of the present invention. Reference 18, by semiconductor process deposition, lithography: money engraving, etc. The semiconductor stacked structure stack is formed on the substrate 300. The semiconductor stacked structure 3〇4 laminate includes a first conductive type semiconductor layer 3〇2, an active light emitting layer 32〇, and a second conductive type semiconductor layer 322 formed on the substrate 300. Above, and the ohmic contact layer 324 is formed on 30/. The photoetching 'forms a protruding block layer 3〇5 having a photonic crystal structure thereon, and the other electrode layers 306, 308 are respectively formed on the ohmic contact layer 3 to be "first-conductive" The structure of the semiconductor layer is carried out. The structure of the material and the photonic crystal is as described in the following figure: 1624024228 P51960118TW 25805twf.doc/n The following description is given. After the motor is injected by the drain, the active light-emitting layer A under the electrode 3〇6 is due to the ι surface. The difference in refractive index causes the light to reflect, so that the light forms a waveguide mode in the two-construction. The platform structure supporting the waveguide mode propagation can include 3 = 曰曰 structure or substrate. If the photonic crystal is fabricated on the substrate towel, Wave mode in the substrate It is taken out by the photonic crystal. In the platform structure, the light propagating along the X axis is on the y-axis, and when the light propagating along the X-axis enters the photon Ο (10) region, the photonic crystal will take out the light and maintain its original. The polarization on the y-axis thus makes the light-emitting diode have a polarization characteristic. In addition, the size and shape of the photonic crystal region, the structure of the photonic crystal, the size and the impurity of the electrode can be further improved. Correlation between the electrode and the photonic crystal to improve the polarization characteristics of the LED. Figures 19-21 illustrate the _| plane along the line of Figure η, according to some embodiments of the present invention. According to the design change described previously, referring to FIG. 19 'in order to increase the light emission_ to increase the light-emitting intensity of the light-emitting diode, the transparent ohmic contact layer 324 may extend to the surface of the second conductive type semiconductor layer 322 of the photonic crystal region. The active luminescent layer under the transparent ohmic contact layer can emit light, and the thickness, size and shape of each platform structure are designed so that the active luminescent layer can only emit a mode with a specific polarization direction. Light, so the light-emitting diode can emit high-intensity polarized light. Furthermore, referring to Figure 2, in order to enhance the effect of the waveguide, the light propagating along the x-axis is increased, and DBR can be added to the light-emitting diode. The structure of the structural layer 332. After the active light-emitting layer 320 under the electrode 3〇6 emits light, the structure of the structural layer 332 causes most of the light to propagate along the X-axis while the polarization of the light propagating along the X-axis is On the y-axis, when this 17 200924228 P51960118TW 258〇5twf.doc/n light propagates into the photonic crystal region, the photonic crystal will take out the light and maintain its polarization on the original y-axis. Since the light propagating along the X-axis in the platform structure increases, the intensity of the polarized light of the light-emitting diode is also increased. Further, in order to increase the light-emitting area to increase the light-emitting intensity of the light-emitting diode, the transparent ohmic contact layer 324 may extend to the surface of the layer DBR structure layer 332 above the photonic crystal region. The active luminescent layer 320 under the transparent ohmic contact layer 324 can emit light, and the thickness, size and shape of each platform structure are combined to make the active luminescent layer illusion, capable of emitting a model cancer with a specific polarization direction. The light, so the light-emitting diode can emit high-intensity polarized light. In addition, a reflective structure, such as a photonic crystal structure having a reflective property, may be added to the side opposite to the waveguide to thereby reduce the light scattered by the side while increasing the light propagating in the waveguide direction. Figure 22 is a perspective view of a light emitting device device in accordance with an embodiment of the present invention. Referring to Fig. 22, in order to increase the large light-emitting area, the amount of light extraction is also increased. In this embodiment, the platform structure of the plurality of light-emitting diodes 312 can be disposed on a substrate, thereby achieving the light-emitting device of the platform array. As for the structure of the platform type U-light diode 312, it is as described above. In general, as the light continues to propagate in the photonic crystal region, the photonic crystal structure continuously extracts the light propagating in the waveguide structure, so that the light travels farther away from the light source, the light that can be taken out by the photonic crystal structure The intensity will be weaker' so the size of the photonic crystal region in the platform structure needs to be properly designed. In addition, the amount of light emitted from the entire wafer needs to be considered, so that the structure of the platform array is formed on the wafer to enhance the light intensity of the south, and then the polarized light of each platform is combined to obtain a light-emitting diode having polarization characteristics. 18 200924228 P51960118TW 25805twf.doc/n After studying the characteristics of optics, the structure of the light-emitting diode and the photonic crystal structure are arranged in a financial manner, and the extracted light has a polarization effect. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and retouchings without departing from the spirit of the invention, and thus the scope of protection of the present invention. This is subject to the definition of the scope of the patent application. [Simple diagram of the diagram] Figure 1 shows the crystal distribution structure of a conventional photonic crystal structure 咅 ® ° ^

2 is a schematic diagram showing the mechanism of the polarization of the photonic crystal structure corresponding to the space in accordance with an embodiment of the present invention. ^ I Figure 3 shows a verification of the incident angle of light and the degree of polarization of the light. 4 is a schematic diagram showing the illumination mechanism of a polarized light-emitting element according to a waveguide mode according to an embodiment of the invention. Figure 5 illustrates the generation mechanism of planar light. 6 is a schematic perspective view of a light-emitting device of a waveguide type according to an embodiment of the invention. Fig. 7 Fig. 8 is a schematic view showing the structure along the I-Ι in Fig. 6. Figure 9 is a schematic illustration of a polarized light-emitting element in accordance with another embodiment of the present invention. Figure 10 is a schematic side view of a polarized light-emitting element in accordance with an embodiment of the present invention. ' 19 200924228 P51960118TW 25805twf.doc/n FIG. 11 illustrates the stereoscopic plant, intention of a polarized light-emitting element according to an embodiment of the present invention. —μ Figure 12-15 is a cross-sectional view showing a polarized light-emitting element in accordance with an embodiment of the present invention. Fig. 16Α-16Β is a perspective view and a top view showing the structure of the light-emitting element of the platform structure. Figure 17 is a perspective view of a light-emitting element of a platform structure according to an embodiment of the invention. Χ 图 ' Figure 18 is a cross-sectional structural view along the guillotine line of Figure 17 in accordance with an embodiment of the present invention. 19-21 illustrate the cross-sectional structure tf along the line III-III of Fig. 17 in accordance with some embodiments of the present invention. Fig. 22 is a perspective view showing a light-emitting element of the embodiment of the present invention, which is not known. [Description of main component symbols] 100a, 100b, 100c: photonic crystal distribution pattern 106: planar light (J 110: photonic crystal 112: lattice 114: light-emitting region 116: photonic crystal region 118: light-emitting source 120: reflective layer 122: photon Crystal structure 124: planar light 200: substrate 20 200924228 P51960118TW 25805twf.doc/n

202: semiconductor stacked structure 206: first electrode layer 208: second electrode layer 210: light emitting unit 212: photonic crystal structure 220: first conductive type semiconductor layer 222: active light emitting layer 224: second conductive type semiconductor layer 226: ohm Contact layer 228: waveguide structure 230: waveguide direction 232: DBR structure layer 300: substrate 302: first conductive type semiconductor layer 304: semiconductor stacked structure 305: protruding block layer 306: first electrode layer 308: second electrode layer 310 Photonic crystal structure 312: Light-emitting element 320: Active light-emitting layer 322: Second conductive-type semiconductor layer 324: Ohmic contact layer 332: DBR structural layer 21

Claims (1)

200924228 P51960118TW 25805twf.doc/n X. Patent application scope: 1. A polarized light-emitting element comprising: a substrate; and: a semiconductor stack structure on which at least one first region 1 is - region' The second region has a photonic crystal structure, and the first region generates a catalyzed light through the photonic crystal structure. The polarized light-emitting element according to the above item (4), further comprising: a germanium electrode layer and a second electrode layer corresponding to the first electrode layer to generate the light source. The polarized light-emitting element according to claim 1, wherein the photonic crystal structure is a plurality of crystals on the structure of the semiconductor stack 4 to form a lattice pattern. ί J 4. The polarized light-emitting element according to the third aspect of the patent application of the fifth aspect of the invention, wherein the lattice pattern comprises a quadruple symmetry, a six-fold symmetry, a rectangular lattice, a periodic structure, a multiple periodic arrangement structure, The periodic structure or the non-circumferential φ. 5. The polarized light-emitting element according to claim 3, wherein the structures of the scorpions include holes, columns, cones, continuous irregularities, The discontinuous embossing I combines one of several structures. 6. The polarized light-emitting element according to claim 3, wherein the cross-sectional shape of the U-shaped body single 7L is polygonal, circular or elliptical. 7. The polarized light-emitting element of claim 1, wherein the semiconductor stack structure comprises: a first conductive semiconductor layer; an active light-emitting layer; a conductive semiconductor layer; a second conductive semiconductor layer on the active light emitting layer; and an ohmic contact layer between the second conductive semiconductor layer and the first electrode layer. 8. The polarized light-emitting element of claim 7, wherein the semiconductor stacked structure further comprises at least a distributed Bragg reflection layer between and between the first conductive semiconductor layer and the substrate One or both of the second conductive type semiconductor layer and the ohmic contact layer. 9. The polarized light-emitting element of claim 1, wherein the photonic crystal structure is a plurality of semiconductor pillars on the second region of the semiconductor stacked structure, and light is also emitted. 10. A polarized light-emitting element comprising: a substrate; and a semi-body stack structure having a plurality of strip regions on the substrate, wherein at least one photonic crystal is present between the strip regions A structure in which a polarized light is generated when a generated light source passes through the photonic crystal structure. 11. The polarized light-emitting element of claim 10, wherein the semiconductor stacked structure further comprises: a plurality of first electrode strip layers on each of the strip regions of the semiconductor stacked structure; and at least a second electrode strip layer, in the semiconductor stack structure and between the photonic crystal structures, corresponding to the first electrode strip layer to generate the 23 200924228 P51960118TW 25805twf.doc/n passive 12. As claimed in the patent a member, wherein the photonic crystal structure is a polarized crystal unit of the polarization described above to form a plurality of lattice patterns on the #¥ body stack structure. The lattice pattern comprises a quadruple '丄=polarized illuminating element Ο 二 = two-construction, a multiple periodic arrangement structure, a quasi-periodic structure or a piece, and in the case of 1: the polarization of the second term The illuminating element I, the day-to-day body (four) structure includes a hole, a column, a cone, a car, a concave shape such as: a concave-convex shape or a combination of one of several structures. And a polarized light-emitting element as described in the U items. ', a polygon, a circular or elliptical piece of the shape of the interception; a illuminating element of the rhyme - a first conductivity type semiconductor layer; 2 a moving layer of light on the first conductivity type semiconductor layer; - an ohmic layer on the active luminescent layer; and an electrode layer, at least a second material guide (10) and the first element, the polarized illuminant layer described in item 16; And/or both between the at least-distributed Bragg reflection first-electrode type semiconductor layer and the substrate and between the second via 24 200924228 P51960118TW 25805 twf.doc/n electrical-type semiconductor layer and the ohmic contact layer. 18. A polarized light-emitting element as described in claim 1 wherein the photonic crystal structure is a plurality of semiconductor pillars on the semiconductor stack structure also emits light. 19. A polarized light-emitting element comprising: a substrate; and a semiconductor stacked structure on the substrate, wherein the semiconductor stack At least one protruding block layer is formed, and the protruding block layer has a photonic crystal structure, wherein the generated light source passes through the photonic crystal structure to generate polarized light. 20. The polarized light-emitting element of claim 19, further comprising: a first electrode layer; and a second electrode layer corresponding to the first electrode layer to generate the light member, the basin (4) Stopping material _ The polarized luminescent element crystal structure described in Item 19 is a plurality of baskets on the structure of the material conductor stack 4 to form a lattice pattern. The polarized illuminating elements described in item 21 of the Γ中二二Special range are periodically arranged, multi-weighted: 4% by weight, six-fold symmetrical, rectangular lattice, non-periodic structure. A conformal, ad hoc structure or piece, of which! 21 The polarized illuminating elements of the day-to-day structure—including holes, columns, cones, and links. 25 200924228 P519601181W 25805twf.doc/n Continued embossing, discontinuous embossing, or combining one of several structures. 24. The polarized illuminant as described in claim 21, wherein the cross-sectional shape of the crystal unit is a polygon, a circle or an expanded circle. The polarized light-emitting element, wherein the semiconductor stacked structure comprises: a first conductive semiconductor layer; an active light-emitting layer on the first conductive semiconductor layer; and a second conductive semiconductor layer And a ohmic ride between at least the second conductive semiconductor layer and the first electrode layer. 26. The polarized light-emitting element of claim 25, wherein the semiconductor stacked structure further comprises at least one distributed Bragg reflection layer 'between the first conductive semiconductor layer and the substrate and the second One or both of the conductive semiconductor layer and the ohmic contact layer. y 27. The polarized light-emitting element of claim 19, wherein the photonic crystal structure is a plurality of semiconductor pillars that also emit light individually. 28. A polarized light-emitting element, comprising: a substrate; and a semiconductor stacked structure on the substrate, wherein the semiconductor stacked structure has a plurality of protruding block layers forming an array distribution, each of the protruding block layers There is a photonic crystal structure in which a polarized light is generated when a generated light source passes through the photonic germanium structure. 29. A polarized light element 26 as claimed in claim 28, 200924228 J-My&un^xw 25805 twf.doc/n an electrode layer on each of the protruding block layers; and block # The semiconductor stack structure corresponds to the drain layer of the protruding region to generate the light source. 30. According to the patent claim, wherein the photonic crystal structure is in the 暮, = polarized 兀The crystal unit is formed into a lattice pattern. The plurality of Ο 上 on the stack structure, the polarized illuminant periodic arrangement structure, multi-cycle symmetry, rectangular lattice, aperiodic, according to the scope of claim 30 Sex structure. 四 (4) structure, material structure or piece t. The polarized illuminant as described in the scope of patent application continuation of the concave and convex shape 'discontinuous concave two=;: columnar, cone-shaped, flail, ^ ^ ^ Π Χ 'The mouth has one of several structures. The shape of the shape: 曰: body " 利祀,, 30 of the polarized illuminators - day-to-day-old pine shape Polygon, circle or expansion piece, 1·中二: 围The polarized light element mentioned in item 28 is the half of the light The bulk stacking structure comprises: a first conductive semiconductor layer; -= moving = optical layer 'on the first conductive semiconductor layer; and a second conductive semiconductor layer 'in the active upper ohmic contact layer, at least兮 _ θ , — between the electrode layers. 7 in the first conductive semiconductor layer and the 27th 200924228 κ ι ν ν 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 An element, wherein the semiconductor stacked structure further comprises at least one distributed Bragg reflection layer, between the first conductive type semiconductor layer and the substrate, and between the second conductive type semiconductor layer and the ohmic contact layer 36. A polarized light-emitting element as described in claim 28, wherein the photonic crystal structure is a plurality of semiconductor pillars, and light is also emitted individually. 28