200924125 九、發明說明： 【發明所屬之技術領域】 本發明係有關於—種丰導贈私壯* 錄主 種牛蜍體封裝構造，更特別有關於一 種+導體封裝構造，i散埶片 〃散，、，、片之％形條狀凸部環繞晶片承 L无W技術】200924125 IX. INSTRUCTIONS: [Technical field to which the invention pertains] The present invention relates to a kind of packaged structure of a burdock body, and more particularly relates to a +conductor package structure, ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
C υ ^人=封▲的型絲多舉例來說，以⑽連接的型 ΙρΓ ! ,J\：h ^ ^(thin — — Package, 由金屬封裝（QuadFlatPaekage，qfp)等封裝，是 結構’藉著兩面或四邊的引腳和電 球和電路板㈣ Uba11 gnd，叫，嶋）封裝是藉由錫 也二::針對不同的封㈣，其散熱模式 置於封裝結構中，以提==係裝設編等散熱裝 參考第1圖，習知丰導 架11 散熱片13及一封膠體14。該晶片12 1示猎由黏愚' 15而固定於兮迓 萨由钽疋於該導線架11之晶片承座20上，並 熱片Π係直接貼嗖 广線‘ U之引腳16。該散 該晶片u二1 承座2〇之下表面22,用以將 月12所產生的執傳導 盥該啬埶κ 1 ς .....至外界。然而，該晶片承座20 ^成放熱片13之間常因接 由於* @ 24# f㊉口接觸表面不平整而存有空隙24。 田於工隙24狹小使得該 此當該半導體封襄構造1〇谁土無法填充於空隙24，因 ^ ΡΨ 24 ^ ^ Λ ^ 行可罪度相關溫度測試時，該 工I系24會造成該晶片 興3亥散熱片13之間發生界面 +導體封裳構造H)主要包含一導線 B曰月 I 7 > 一 «/. AI. .» . 01286-TW/ASE2033 200924125 脫層（Delaminati〇n)，如第2圖所示。 、舉例來說，習知冑方扁平封裝（QFp)之封褒構们〇經潮 濕敏感度等級 3 (攝氏 260°C)(moiStUre Sensitivity Ievel 3,C υ ^人 = ▲ ▲ type of wire, for example, with (10) connected type ΙρΓ ! , J\: h ^ ^ (thin — — Package, packaged by metal package (QuadFlatPaekage, qfp), etc. The two-sided or four-sided pins and the electric ball and the circuit board (4) Uba11 gnd, called, 嶋) package is made by tin also two:: for different seals (four), its heat dissipation mode is placed in the package structure to mention == Refer to Figure 1 for the heat sink package, such as the heat sink 13 and a gel 14 . The wafer 12 1 is fixed to the wafer holder 20 of the lead frame 11 by the adhesive, and the thermal film is directly attached to the pin 16 of the wide line ‘U. The wafer u 1-2 bears a lower surface 22 of the cradle for conducting the enthalpy generated by the month 12 to the outside. However, the wafer holder 20 is often connected to the heat-dissipating sheet 13 because of the unevenness of the contact surface due to *@24#f. Tian Yu's gap 24 is so small that the semiconductor sealing structure 1 can not be filled in the gap 24, because ^ ΡΨ 24 ^ ^ Λ ^ when the guilt-related temperature test, the work I system 24 will cause The interface + conductor seal structure H) mainly contains a wire B曰月I 7 > a «/. AI. .» . 01286-TW/ASE2033 200924125 delamination (Delaminati〇n ), as shown in Figure 2. For example, the custom-made square flat package (QFp) seals have a moisture sensitivity level of 3 (Celsius 260 ° C) (moiStUre Sensitivity Ievel 3,
〇 MSL 3)之測試時，該散熱片13與該晶片承座22之間就會 出現較大的間隙。在此情況下，該間隙24使該導線架二 :散熱片13未能良好接合，進而阻礙該晶片12產生之熱 置傳導至該散熱片13,破壞四方扁平封裝（QFP)之封裝構 造之《功能。更甚者，過大的間隙不僅會使封襄結構 無法達到預期散熱效果，還可能導致整個封裝結構遭到損 泣，便有需要提供一種半導體封裝構造及其散熱 能夠解決前述的缺點。 【發明内容】 本發明之-目的在於提供一種半導體封裝構造 片之環形條狀凸部可藉由璟螓s Μ名t J稭田％，.免曰曰片承座而阻止該晶片 與δ亥散熱片之間空隙向外延伸。 為達上述目的，本發明描供—括&播— 月奴仏種丰導體封裝構造，句> 散熱片及一封膠體。該導線架包令 :晶片承座’其承載該晶片。該散熱片係貼設於該晶“ 座上，亚包含一本體及一環形條狀凸部。該本體具 '，其中該表面接觸該晶片承座。該環形條狀凸部係配置 於δ亥本體之表面上，並環繞續晶 片承座。該封膠體係用以 包覆該導線架之部分、晶片及散熱片。 雖然該晶片承座與該散熱片之間可能會因接觸 一晶片、一導線架、 ^ 01286-TW/ASE2033 200924125 =整:存有空隙’ 是本發明之散熱片之環形條狀凸部可 ，由％繞δ亥晶片承座而阻止該空隙向外延伸，冑而阻止該 曰曰片承座與該散熱片之間發生界面脫層（Delaminati〇n)。 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯’下文將配合所附圖示，作詳細說明如下。 【實施方式]When the test of MSL 3), a large gap occurs between the heat sink 13 and the wafer holder 22. In this case, the gap 24 causes the lead frame 2: the heat sink 13 to fail to be well joined, thereby preventing the heat generated by the wafer 12 from being conducted to the heat sink 13 and destroying the package structure of the quad flat package (QFP). Features. What's more, the excessive gap will not only make the sealing structure unable to achieve the expected heat dissipation effect, but also cause the entire package structure to be damaged. It is necessary to provide a semiconductor package structure and heat dissipation to solve the aforementioned shortcomings. SUMMARY OF THE INVENTION The present invention is directed to providing an annular strip-shaped convex portion of a semiconductor package structure sheet which can be prevented from being etched by 璟螓s Μ t t , , The gap between the fins extends outward. In order to achieve the above object, the present invention is described as a "sports-moon scorpion species conductor package structure, sentence> heat sink and a gel. The lead frame package allows the wafer holder to carry the wafer. The heat sink is attached to the crystal seat, and includes a body and an annular strip-shaped protrusion. The body has a surface, wherein the surface contacts the wafer holder. The annular strip-shaped protrusion is disposed at δ On the surface of the body, and surrounding the wafer holder. The encapsulation system is used to cover a portion of the lead frame, the wafer and the heat sink. Although the wafer holder and the heat sink may contact a wafer, Lead frame, ^ 01286-TW/ASE2033 200924125 = whole: there is a gap ' is the annular strip-shaped convex portion of the heat sink of the present invention, which can prevent the gap from extending outward by the %-wrap-around wafer holder, thereby preventing The interface delamination between the cymbal holder and the heat sink is made. The above and other objects, features and advantages of the present invention will become more apparent. The description is as follows.
多考第3a及3b圖，其顯示本發明之一實施例之半導體 封裝構造100。該半導體封裝構造1〇〇包含一晶片u〇、一 導線架120、一散熱片15〇及一封膠體16〇。 包含四個支撐肋條122及一晶片承座124，該支=122 連接於晶片承I 124之角^，且該晶片承座124用以承載 該晶片no。該晶片110係藉由黏膠112而固定於該導線架 120之晶片承座124之上表面126，並藉由銲線（圖未示）電 性連接至該導線架120之引腳128。該散熱片15〇係貼設 於該晶片承座124之下表面130，用以將該晶片11〇所產 生的熱傳導至外界。該散熱片15〇包含一本體152及一環 形條狀凸部154。該本體152具有一上表面156及一下表 面158’其中該本體152之上表面156接觸該晶片承座124 之下表面130，且該本體152之下表面158係相對於該本 體152之上表面156〇該環形條狀凸部154係配置於該本 體1 5 2之上表面1 5 6，並環繞該晶片承座1 2 4。較佳地，該 環形條狀凸部154鄰近於該晶片承座124。該封膠體16〇 係用以包覆該導線架120、晶片11〇及散熱片15〇,並裸露 出該導線架120之部分引腳128及該散熱片15〇之下表面 01286-TW/ASE2033 200924125 158。 雖然該晶片承座m與該散熱片i50之間可能會因接觸 表面不平整而存有空隙，但是本發明之散熱片15〇之環形 條狀凸部154可藉由環繞該晶片承座124而阻止該空隙向 外延伸’ it而阻止該晶片承座124與該散熱# 15G之間發 生界面脫層（Delamination)。 參考第4a及4b圖，該環形條狀凸部】 體152之上表面156。在本實施財，該環形絲凸部154 係可為-矩形條狀凸部，諸如正方形或長方形條狀凸部。 在另-實施射，該環形條狀凸冑154亦可為圓形條狀凸 部或橢圓形條狀凸部。該環形條狀凸冑154之剖面係可為 再參考第4b圖’在本實施射，該環形條狀凸部a 與該本體152係可為不同材f，且該環形條狀凸部154倍 糟由黏膠（圖未示）固定於該本體152上。該環形條狀凸^ =4係可為金屬氧化物所製，且該本冑152係可為金屬所 製。由於金屬氧化物與封膠體16〇之間的接合性大於該晶 :=:24(金屬所製)與封膠體16。之間的接合性，因= =二阻止該空隙向外延伸。舉例而言，該環形條狀凸 為乳化銅所製，且該本體152為鋼金屬所製。或者， =條=154為氧化铭所製，且該本體152為紹金 5圖，在另一實施例中，該環形條狀凸部 :、該本體152係可為同一材質’並—體成形被製造。 列而吕，㈣形條狀凸部154,與該本體152皆為銅金屬 01286-TW/ASE2033 200924125 或銘金屬所製°該環形條狀凸部1 54,係可藉由衝壓或筆，告 製程而被製造。 μ 雖然本發明已以前述實施例揭示，'然其並非用以限定本 發明任何本發明所屬技術領域中具有通常知識者 脫離本發明之精神和範圍内，當可作各種之更動與修改。 因此本發明之保错pq 、 保\範圍當視後附之申請專利範圍所界定者 ηMulti-Test Figures 3a and 3b show a semiconductor package structure 100 in accordance with one embodiment of the present invention. The semiconductor package structure 1 includes a wafer u, a lead frame 120, a heat sink 15 and a gel 16 〇. There are four support ribs 122 and a wafer holder 124 connected to the corner of the wafer holder 124, and the wafer holder 124 is used to carry the wafer no. The wafer 110 is fixed to the upper surface 126 of the wafer holder 124 of the lead frame 120 by an adhesive 112, and is electrically connected to the lead 128 of the lead frame 120 by a bonding wire (not shown). The heat sink 15 is attached to the lower surface 130 of the wafer holder 124 for conducting heat generated by the wafer 11 to the outside. The heat sink 15 includes a body 152 and a ring-shaped strip 154. The body 152 has an upper surface 156 and a lower surface 158'. The upper surface 156 of the body 152 contacts the lower surface 130 of the wafer holder 124, and the lower surface 158 of the body 152 is opposite the upper surface 156 of the body 152. The annular strip-shaped protrusion 154 is disposed on the upper surface 156 of the body 152 and surrounds the wafer holder 142. Preferably, the annular strip protrusion 154 is adjacent to the wafer holder 124. The encapsulant 16 is used to cover the lead frame 120, the wafer 11 and the heat sink 15A, and expose a part of the lead 128 of the lead frame 120 and the lower surface of the heat sink 15〇01286-TW/ASE2033 200924125 158. Although there may be a gap between the wafer holder m and the heat sink i50 due to unevenness of the contact surface, the annular strip protrusion 154 of the heat sink 15 of the present invention may be surrounded by the wafer holder 124. Preventing the void from extending outwardly prevents the interface from delaminating between the wafer holder 124 and the heat sink #15G. Referring to Figures 4a and 4b, the annular strip-like projections 152 have an upper surface 156. In the present embodiment, the annular wire projections 154 may be - rectangular strip-shaped projections such as square or rectangular strip-shaped projections. In another embodiment, the annular strip-shaped tenon 154 may also be a circular strip-shaped convex portion or an elliptical strip-shaped convex portion. The cross-section of the annular strip-shaped tenon 154 can be further referred to in FIG. 4b. In the present embodiment, the annular strip-shaped convex portion a and the body 152 can be different materials f, and the annular strip-shaped convex portion is 154 times. The glue is fixed to the body 152 by an adhesive (not shown). The annular strip-shaped convex ^ 4 system can be made of a metal oxide, and the base 152 can be made of a metal. Since the bond between the metal oxide and the sealant 16 is greater than the crystal: = 24 (made of metal) and the sealant 16. The bond between the two is prevented by the == two. For example, the annular strip is made of emulsified copper, and the body 152 is made of steel. Or, the strip = 154 is made of oxidized, and the body 152 is a Shaojin 5 diagram. In another embodiment, the annular strip-shaped protrusion: the body 152 can be the same material 'both body-formed Made. The columnar protrusion 154, and the body 152 are made of copper metal 01286-TW/ASE2033 200924125 or the metal of the inscription metal. The annular strip protrusion 1 54 can be stamped or pented. It is manufactured by the process. The present invention has been disclosed in the foregoing embodiments, and is not intended to limit the scope of the present invention. Therefore, the error-preserving pq and the scope of the invention are defined by the scope of the patent application attached η
Cj 【圖式簡單說明】 第1圖為先前技術之半導體封裝構造直 顯示晶片承座20盥兮與血 田不思圖’其 亥政熱片1 3之間存有空隙24。 弟2圖為先前技術之該半導體封裝構造之 圖，其顯示該空隙9 4、it a·、 ，ViJ>' 門. ，、绝成該晶片承座22與該散熱片13之 間發生界面脫層片。 第3a及3b圖為本發明之—實施例之半導 平面及剖面示意圖。 了在構w之 第4a及4b圖為本發明之—實施例之散熱片 面示意圖。 平面及aj 圖 第5圖為本發明之另—實施例之散熱片之剖面示意 【主 要元件符號說明】 10 半導體封裝構造 11 導線架 12 晶片 13 散熱片 14 封膠體 15 黏膠 01286-TW/ASE2033 200924125 16 引腳 20 晶片承座 22 下表面 24 空隙 100 半導體封裝構造 110 晶片 112 黏膠 120 導線架 122 支撐肋條 124 晶片承座 126 上表面 128 引腳 130 下表面 150 散熱片 152 本體 154 環形條狀凸部 1545 環形條狀凸部 156 上表面 158 下表面 160 封膠體 C, 01286-TW/ASE2033 10Cj [Simple Description of the Drawings] Fig. 1 shows a gap 24 between the semiconductor package structure of the prior art and the wafer holder 20's and the blood field. 2 is a diagram of the semiconductor package structure of the prior art, which shows the gap 94, it a·, , ViJ>' gate, and the interface between the wafer holder 22 and the heat sink 13 is removed. Layer. 3a and 3b are schematic views of a semi-conductive plane and a cross-section of an embodiment of the present invention. 4a and 4b of the structure w are schematic views of the heat sink of the embodiment of the present invention. Fig. 5 and Fig. 5 is a cross-sectional view of a heat sink according to another embodiment of the present invention. [Main component symbol description] 10 Semiconductor package structure 11 Lead frame 12 Wafer 13 Heat sink 14 Sealant 15 Adhesive 01286-TW/ASE2033 200924125 16 Pin 20 Wafer holder 22 Lower surface 24 Void 100 Semiconductor package construction 110 Wafer 112 Adhesive 120 Lead frame 122 Support rib 124 Wafer holder 126 Upper surface 128 Pin 130 Lower surface 150 Heat sink 152 Body 154 Ring strip Convex 1545 annular strip protrusion 156 upper surface 158 lower surface 160 encapsulant C, 01286-TW/ASE2033 10