200919521 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種饋通濾波器，特別是指具過電 壓保護功能之晶片型饋通濾波器。 【先前技術】 如今電子產品講求的是高速傳輸訊號，如HDMI 訊號頻率達742.5MHz，對於靜電放電（ESD)所需要的 過電壓保護裝置特性要求更是嚴格，低容值的過電壓 保護裝置可以避免在速度快的高頻訊號有衰減作用。 目前業界有暫態電壓抑制二極體（Transient Voltage Suppress Diode, TVSD)裝置、積層式壓敏電 阻（Multi-Layer Varistor, MLV)裝置等。 惟上述對於過電壓的保護仍有不足，且無饋通濾 波之功能。 【發明内容】 因此，本發明旨在提供一種具過電壓保護功能之 晶片型饋通濾波器，係結合饋通式濾波與中空氣隙過 電壓保護功能，以解決信號在高傳輸速度所面臨的 ESD(靜電防護）與EMI(濾波）之雙重問題。 本發明之具過電壓保護功能之晶片型饋通濾波 器，包含：一下基板；一電極層形成於該下基板之上 端表面，此電極層為一十字型電極形式，在其中一方 200919521 向電極上形成兩個溝槽’該溝槽將該電極層切開且延 伸至5亥下基板之内；一中其；，且古哲 〒基板I有第二溝槽，該第 一溝槽與下基板之第一溝槽相對，且 槽相同之寬度與長度;-第二中基板， -電極層，其電極層方向與下基板具有溝槽的電極線 方向-致’該上基板覆蓋於中基板之上，然後覆蓋下 基板，使得上基板、中基板與下基板接合。 本發明之進一步特徵及功能可藉由以下之實施 例及圖式說明而有更詳盡之瞭解。 只 【實施方式】 . 如第1圖所示，本發明之具過電壓保護功能之晶 • 片型饋通濾波器，包含：一下基板1、一第一中其& 9 -第二中基板3及一上基板4;其中，下基板中;的:2方 表面形成一電極層11，該電極層丨丨呈十字型，其包含 ° 傳輸線和接地線作用的電極，其中作為傳輸線的電^ 上形成有兩個溝槽12卜122，該溝槽12卜；122不僅將 電極層切開，並且延伸至下基板1的内部； 第一中基板2,係設於下基板丨的上方，其表面相 對至下基板1之溝槽12ι、122的位置，形成有相對之 /冓槽21、22，溝槽21、22和溝槽121、122的位置相對， 見度和長度亦相同。 第一中基板3 ,係設於第一中基板2的上方，其上 端表面形成一電極31，該電極31可為直線形或彎曲 200919521 形，電極31的方向和下基板1上具有溝槽121、122的 電極之方向一致； 上基板4，係設於第二中基板3的上方。 如第2圖所示，當下基板1、第一中基板2、第二 中基板3及上基板4依序疊合後，於周邊的四個邊各形 • 成一端電極5卜52、53、54，其中端電極51、52作為 . 接地端’端電極53、54作為輸出端及輸入端。 〇 上述本發明之具過電壓保護功能之晶片型饋通 濾波器’其下基板1和上基板4，係以鋁元素（例如氧 化銘（A1203))、鈦元素或石夕元素等絕緣材料所形成， 亦得為積層式薄帶（Multi-layer thin film)。 • 上述之電極層丨丨和電極31，得使用金，銀，鈀， . 鉑，鎢，銅等金屬之一，其任意組合之合金，或包含 其任意組合之混合材料所形成。 上述形成於下基板1和第一中基板2之溝槽121、 」 122及21、22，係以切割方式形成，當整體疊合完成 * 之後，溝槽12卜U2、21、22即相當於一中空氣室， * y用以提供過電壓保護。並且，可依照需求及規格而 調整尺寸，例如氣隙之深度與寬度，不會因為製程而 受到限制。 曰請參照第3圖，係本發明之具過電壓保護功能之 晶片型饋通濾波器的另一實施例，即本發明之具過電 壓保護功能之晶片型饋通濾波器，可以是如第丨、2 200919521 圖所示之單一元杜，★ 構。 ’、可如第3圖所示，形成矩陣結 片型铲H圖二不：本發明之具過電壓保護功能之晶 6上’為矩陣結構時，係使形成於下基板 ^表面之電極層6G，於傳輸線的方向具有多 =6、62、63、64，在每一延伸段61、62 63 64 Ο Ο :成方兩：，65、66;第一中基板7,設於下基 的#署 對至下基板6之多數溝槽65、66 的=形成有相對數之溝槽71、72，溝槽Μ 一 2 5、66不僅位置相對，寬度和長度亦相同。第 衣面形成有與下基板之電極層的延伸 ^、62、63、64相對應之多數電極81、82 83 84 ’一上基板9，設於悬卜士 ^ ^ ^ ^ . '竑上方。如此形成多組饋通式濾 /电，、中二氣隙之過電壓保護裝置。 此外，如第4圖所示，上述藉由溝槽所切開之電 °層’於切開端可分別形成尖端狀10卜102,使其具 備尖端放電之功能。 ’、 紅合以上所述’本發明之具過電壓保護 片型饋通遽波器，為前所未有，其既未見於任何刊物 且市面上亦未見有任何類似的產品’是以，其具有 無广慮。另外，本發明所具有之獨特特徵以 及功“非習用所可比擬’所以其確實比 進步性合我时料之規定，乃錢提起專= 200919521 申請。 以上所述，僅為本發明最佳具體實施例 明之構造特徵並不侷限於此，任何熟悉該項藏 本發明領域内，可輕易思及之變化或修傅，、比藝者在 在以下本發明之專利範圍。 &可涵蓋 200919521 【圖式簡單說明】 第1圖係本發明之立體分解圖。 第2圖係本發明之成品圖。 第3圖係本發明之另一實施例立體分解。 第4圖係本發明之另一實施例圖。 【主要元件符號說明】 下基板 2:第一中基板 3:第二中基板 4:上基板 11 :電極層 121、122、21、22 :溝槽 31 :電極 51、52、53、54 :端電極 60 :電極層 7 .第一中基板 8 :第二中基板 9 :上基板 6 :下基板 61、62、63、64 :延伸段 65、66 :溝槽 71、72 :溝槽 81、82、83、84 :電極 101、102 :尖端狀200919521 IX. Description of the Invention: [Technical Field] The present invention relates to a feedthrough filter, and more particularly to a wafer type feedthrough filter having an overvoltage protection function. [Prior Art] Today's electronic products are demanding high-speed transmission signals, such as HDMI signal frequency of 742.5MHz, the requirements for over-voltage protection devices required for electrostatic discharge (ESD) are more stringent, low-capacity over-voltage protection devices can Avoid attenuating high-speed signals at high speeds. At present, there are Transient Voltage Suppress Diode (TVSD) devices and Multi-Layer Varistor (MLV) devices. However, the above protection against overvoltage is still insufficient, and there is no function of feedthrough filtering. SUMMARY OF THE INVENTION Accordingly, the present invention is directed to a wafer type feedthrough filter having an overvoltage protection function, which combines a feedthrough filter and a medium air gap overvoltage protection function to solve a problem that a signal is faced at a high transmission speed. The dual problem of ESD (electrostatic protection) and EMI (filtering). The wafer type feedthrough filter with overvoltage protection function of the present invention comprises: a lower substrate; an electrode layer is formed on the upper end surface of the lower substrate, and the electrode layer is in the form of a cross-shaped electrode on one of the 200919521 electrode electrodes Forming two trenches' the trenches are cut and extended to within 5 gallons of the substrate; one of them; and the Guzhe substrate I has a second trench, the first trench and the lower substrate The first trench is opposite, and the groove has the same width and length; the second middle substrate, the electrode layer, the electrode layer direction and the lower substrate have the groove electrode line direction--the upper substrate covers the middle substrate And then covering the lower substrate such that the upper substrate, the middle substrate and the lower substrate are bonded. Further features and functions of the present invention will become apparent from the following detailed description and drawings. [Embodiment] As shown in Fig. 1, the crystal chip-type feedthrough filter with overvoltage protection function of the present invention comprises: a lower substrate 1, a first medium & 9 - a second medium substrate 3 and an upper substrate 4; wherein, in the lower substrate; a 2-sided surface forms an electrode layer 11, the electrode layer is in the shape of a cross, which comprises an electrode of a transmission line and a ground line, wherein the electricity as a transmission line Two trenches 12 are formed on the trenches 122, which not only cut the electrode layer but also extend to the inside of the lower substrate 1; the first middle substrate 2 is disposed above the lower substrate ,, the surface thereof Relative to the positions of the grooves 12, 122 of the lower substrate 1, opposite/grooves 21, 22 are formed, and the positions of the grooves 21, 22 and the grooves 121, 122 are opposite, and the visibility and length are also the same. The first intermediate substrate 3 is disposed above the first intermediate substrate 2, and an upper surface thereof is formed with an electrode 31. The electrode 31 may be linear or curved in the shape of 200919521, and the direction of the electrode 31 and the lower substrate 1 have a groove 121. The electrodes of 122 are in the same direction; the upper substrate 4 is disposed above the second intermediate substrate 3. As shown in FIG. 2, when the lower substrate 1, the first intermediate substrate 2, the second intermediate substrate 3, and the upper substrate 4 are sequentially stacked, the four sides of the periphery are formed into one end electrode 5, 52, 53, 54, wherein the terminal electrodes 51, 52 serve as the ground terminal 'end electrodes 53, 54 as an output terminal and an input terminal. The above-described wafer-type feedthrough filter with overvoltage protection function of the present invention has a lower substrate 1 and an upper substrate 4 which are made of an insulating material such as an aluminum element (for example, Oxide (A1203)), a titanium element or a stone element. Formed, it also has to be a multi-layer thin film. • The electrode layer 电极 and the electrode 31 described above may be formed using one of gold, silver, palladium, platinum, tungsten, copper or the like, an alloy of any combination thereof, or a mixed material containing any combination thereof. The grooves 121, 122, 21, and 22 formed on the lower substrate 1 and the first intermediate substrate 2 are formed in a cutting manner. After the overall lamination is completed*, the grooves 12, U2, 21, and 22 are equivalent. A medium air chamber, * y to provide overvoltage protection. Also, the size can be adjusted according to requirements and specifications, such as the depth and width of the air gap, and will not be limited by the process. Referring to FIG. 3, another embodiment of the wafer type feedthrough filter having the overvoltage protection function of the present invention, that is, the wafer type feedthrough filter having the overvoltage protection function of the present invention may be丨, 2 200919521 The single Yuan Du, ★ structure. ', as shown in Fig. 3, forming a matrix-tab type shovel HFig. 2: When the crystal 6 on the overvoltage protection function of the present invention is a matrix structure, the electrode layer formed on the surface of the lower substrate is formed. 6G, in the direction of the transmission line, has more = 6, 62, 63, 64, in each extension 61, 62 63 64 Ο Ο: square two: 65, 66; the first medium substrate 7, is provided at the lower base The pair of grooves 65, 66 of the lower substrate 6 are formed with a plurality of grooves 71, 72, and the grooves 2 25, 66 are not only positioned oppositely but also have the same width and length. The first garment surface is formed with a plurality of electrodes 81, 82 83 84 ', and an upper substrate 9 corresponding to the extensions of the electrode layers of the lower substrate, 62, 84, 64, which are disposed above the suspension. In this way, a plurality of sets of over-voltage protection devices for the filter/electricity and medium air gaps are formed. Further, as shown in Fig. 4, the above-mentioned dielectric layer cut by the groove can form a tip end 10b at the slit end, respectively, so as to have a function of tip discharge. ', red combination above' the overvoltage protection chip type feedthrough chopper of the present invention is unprecedented, it is not found in any publication and there is no similar product on the market. Be careful. In addition, the unique characteristics of the present invention and the merits of the "non-practical comparison" are indeed more than the provisions of the advancement of the current situation, and the application of the money is specifically for 200919521. The above is only the best specific to the present invention. The structural features of the embodiments are not limited thereto, and any changes or modifications that can be easily conceived in the field of the invention are known, and the artist is in the following patent scope of the present invention. & may cover 200919521 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of the present invention. Fig. 3 is a perspective view of another embodiment of the present invention. Fig. 4 is a perspective view of another embodiment of the present invention. [Main component symbol description] Lower substrate 2: First intermediate substrate 3: Second intermediate substrate 4: Upper substrate 11: Electrode layers 121, 122, 21, 22: Trench 31: Electrodes 51, 52, 53, 54 : terminal electrode 60 : electrode layer 7 . First intermediate substrate 8 : second intermediate substrate 9 : upper substrate 6 : lower substrate 61 , 62 , 63 , 64 : extensions 65 , 66 : trenches 71 , 72 : trench 81 , 82, 83, 84: electrodes 101, 102: tip shape