TW200915553A - Solid-state imaging device, color filter, camera, and method of manufacturing color filter - Google Patents

Solid-state imaging device, color filter, camera, and method of manufacturing color filter Download PDF

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TW200915553A
TW200915553A TW097118748A TW97118748A TW200915553A TW 200915553 A TW200915553 A TW 200915553A TW 097118748 A TW097118748 A TW 097118748A TW 97118748 A TW97118748 A TW 97118748A TW 200915553 A TW200915553 A TW 200915553A
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color
color layer
layer
light
substrate
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TW097118748A
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Chinese (zh)
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TWI387099B (en
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Kazuyoshi Yamashita
Yoshiharu Kudoh
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Sony Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Optical Filters (AREA)

Abstract

To increase an image quality by sufficiently shielding light incident to a peripheral circuit area with a Bayer array including a filter layer. A plurality of Bayer arrays BH including a red filter layer 301R, a green filter layer 301G and a blue filter layer 301B are arranged so as to correspond to a plurality of pixels P in a pixel region PA, and a plurality of Bayer arrays BH are arranged for a peripheral region SA, similarly for the pixel region PA. In the peripheral region SA, the plurality of Bayer arrays BH arranged in the peripheral region SA are laminated with the blue filter layer 301B so that the blue filter layer 301B covers the corresponding surface of a substrate 101.

Description

200915553 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種固體攝像裝置、彩色據光器（c〇l〇r filter)、相機、及彩色滤光器之製造方法。 【先前技術】 攝錄影機（video camera)、數位靜態相機等之相機，係例 如包括 CMOS(Complementary Metal Oxicide Semiconductor， 互補式金屬氧化物半導體）型影像感測器（iniage sensQI〇、 f) CCD(Charge c〇upled Device，電荷耦合器）型影像感測器 等之固體攝像裝置。在此固體攝像裝置中，係於半導體基 板之面上設置形成有複數個像素之像素區域，及位於該像 素區域周圍之周邊區域。再者，在像素區域中，接受由被 攝體像而來之光，且藉由將該接受之光予以光電轉換，而 生成彳5號電荷之光電轉換元件，係以與該複數個像素對應 之方式而形成有複數個。再者，在周邊區域中，係形成有 用以處理藉由該光電轉換元件所生成之信號電荷之周邊電 〇 路（參照例如專利文獻1)。 又，在固體攝像裝置中，係以與半導體基板之面相對面 之方式而設有彩色濾光器。此彩色濾光器係在與半導體基 板之面對應之面’接受由被攝體像而來之光，且穿透該光 中之特定波長帶之光。如此一來，可藉由彩色濾光器而使 光作為色光穿透。再者，該色光係從彩色遽光器出射至半 導體基板之面上的像素區域（參照例如專利文獻2)。 於此彩色濾、光器t與像素區域對應之區域中，係以將由 128S82.doc 200915553 被攝體像而來之本 v, 尤’例如作為紅、藍、綠之3原色之色光 而加以穿透方式，楣 & W i生地配置有複數個包含複數色之色 層之色彩排列。例如，餘丄、 耨由稱為拜耳排列（Bayer Arrangement)200915553 IX. Description of the Invention: [Technical Field] The present invention relates to a solid-state imaging device, a color light illuminator, a camera, and a method of manufacturing a color filter. [Prior Art] A camera such as a video camera or a digital still camera includes, for example, a CMOS (Complementary Metal Oxicide Semiconductor) type image sensor (iniage sensQI〇, f) CCD. (Charge c〇upled Device, type of image sensor) type solid state imaging device. In this solid-state imaging device, a pixel region in which a plurality of pixels are formed and a peripheral region around the pixel region are provided on the surface of the semiconductor substrate. Further, in the pixel region, light received by the subject image is received, and the photoelectric conversion element of the fifth electric charge is generated by photoelectrically converting the received light to correspond to the plurality of pixels. There are a plurality of ways. Further, in the peripheral region, a peripheral circuit for processing the signal charge generated by the photoelectric conversion element is formed (see, for example, Patent Document 1). Further, in the solid-state imaging device, a color filter is provided so as to face the surface of the semiconductor substrate. The color filter receives light from a subject image on a surface corresponding to a surface of the semiconductor substrate and penetrates light of a specific wavelength band in the light. In this way, light can be transmitted as color light by means of a color filter. Further, the color light is emitted from the color chopper to the pixel region on the surface of the semiconductor substrate (see, for example, Patent Document 2). In the region corresponding to the pixel region of the color filter and the photodetector t, the v, which is imaged by the image of 128S82.doc 200915553, is used, for example, as the color light of the three primary colors of red, blue, and green. In the transparent mode, 楣 & W i is configured with a plurality of color arrangements including a plurality of color layers. For example, the embers and cymbals are called Bayer Arrangement.

之色彩排列，讓葙料A ^ 夏數色之色層與各像素對應地配置。在 此，係例如將包装a . 者色洌與光阻（photoresist)材料之塗佈 液藉由旋塗（spinc〇at)法等之塗覆（⑺偷8)方法加以塗佈 成k臈後藉由光微影（lithography)技術對該塗膜進 行圖案加肖由如此方式，讓各色之色層以與該色彩排 ? 列對應之方式加以形成（參照例如專利文獻3)。 再者，在彩色濾光器中與周邊區域對應之區域中，為抑 制在攝像圖像中產生光斑（flare)等而使得圖像品質降低， 係形成有用以防止來自周邊區域中之金屬材料之光反射的 光反射防止層。該光反射防止層，係例如將以與像素區域 對應之方式而形成之複數個色層，藉由在周邊區域疊層為 役實狀而形成（參照例如專利文獻4)。 [專利文獻1]日本特開2〇〇7-13〇89號公報 [專利文獻2]日本特開2006-90983號公報 [專利文獻3]日本特開20〇6-3m76號公報 [專利文獻4]曰本特開平01-194464號公報 【發明内容】 [發明所欲解決之問題] •然％ ’即使如地形成^光反⑴方1層’仍有難以充分 抑制光斑之情形。例如，將紅色之色層、藍色之色層在巧 邊區域中疊層為密實狀時，綠色之光係可穿透。因此，會 128882.doc 200915553 有產生綠色光斑之情形’而有圖像品質之降低顯著化之产 事。 月 又，在如上所示地形成彩色濾光器之 地形成該彩色濾光器之膜厚之情形。因此，會有在攝= 像中產生斑點之情形，而有圖像品質降低之情事。 再者，會有光入射於形成在周邊區域之周邊電路之情 形，此情形下，例如，會有縱紋狀之雜訊產生於攝像圖像 之情形’因此有圖像品質降低之情事。 尤其是，在以旋塗法而藉由從像素區域之中心部分朝周 圍延伸之方式，進行塗佈來形成塗佈膜之情形下，會有周 圍之膜厚形成較該中心更薄之情形。因此，在對該塗佈臈 進行圖案加工而形成色彩排列之際，會有因為該塗佈膜之 膜厚之參差不齊，而引起在攝像圖像產生額緣狀之不均等 的情形。又，會有無法將入射於形成在周邊區域之周邊電 路之光予以充分地遮光之情形。因此，會有上述之缺失顯 著化之情事。 並且’例如於CMOS型影像感測器，將複數個電子電路 混載於半導體基板之S〇C(System 〇n Chip，晶片系統）方 式中，由於需要讓在半導體基板中，周邊區域所佔有之佔 有面積增大，故而會有因此而使得上述之缺失更加顯著化 之情形。 如此，在固體攝像裝置中，光斑、額緣狀之不均等、縱 紋狀之雜訊等之缺失，將因彩色濾光器產生在攝像圖像 上’致使圖像品質降低。 128882.doc 200915553 因此，本發明係提供—種可使圖像品質提昇之固體攝像 裝置、彩色濾光器、相機、及彩色濾光器之製造方法。 [解決問題之技術手段] 本發明係-種固體攝像裝置，係於基板之面上設置有·· 像素區域，其配置有複數個像素，前述像素係包含接受由 被攝體像而來之光，且將該接受之光予以光電轉換而生成 信號電荷之光電轉換元件；及周邊區域，其係位於前述像 ΟThe color arrangement is such that the color layer of the material A ^ summer color is arranged corresponding to each pixel. Here, for example, the coating liquid of the package a. and the photoresist material is coated by a spin coating method ((7) stealing 8) to be applied to k臈. The coating film is patterned by a lithography technique in such a manner that the color layers of the respective colors are formed in correspondence with the color arrangement (see, for example, Patent Document 3). Further, in a region corresponding to the peripheral region in the color filter, in order to suppress generation of a flare or the like in the captured image, image quality is lowered, and it is formed to prevent metal material from the peripheral region. The light reflection preventing layer of light reflection. In the light reflection preventing layer, for example, a plurality of color layers formed so as to correspond to the pixel regions are formed by laminating the solid regions in the peripheral region (see, for example, Patent Document 4). [Patent Document 1] JP-A-2006-90983 (Patent Document 3) JP-A-2006-90983 (Patent Document 3) [Patent Document 4] 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 For example, when the red color layer and the blue color layer are laminated in a dense area, the green light can be penetrated. Therefore, 128882.doc 200915553 has a situation in which a green spot is generated, and there is a significant reduction in image quality. In the case of forming a color filter as shown above, the film thickness of the color filter is formed. Therefore, there is a case where spots are generated in the image, and there is a case where the image quality is lowered. Further, there is a case where light is incident on a peripheral circuit formed in the peripheral region. In this case, for example, there is a case where a longitudinal-like noise is generated in a captured image, and thus image quality is lowered. In particular, in the case where a coating film is formed by application from the central portion of the pixel region to the periphery by spin coating, the film thickness around the film may be thinner than the center. Therefore, when the coating 臈 is patterned to form a color arrangement, the film thickness of the coating film may be uneven, which may cause unevenness in the image of the image. Further, there is a case where light incident on the peripheral circuit formed in the peripheral region cannot be sufficiently shielded from light. Therefore, there will be cases where the above-mentioned lacks are significant. In addition, for example, in a CMOS image sensor, a plurality of electronic circuits are mixed in a semiconductor substrate (S〇C (System 〇n Chip) system), and it is required to occupy the peripheral region in the semiconductor substrate. As the area increases, there is a case where the above-described missing is more prominent. As described above, in the solid-state imaging device, the lack of light spots, unevenness of the frontal edge, and the like of the longitudinal ridges are caused by the color filter being generated on the captured image, resulting in deterioration of image quality. 128882.doc 200915553 Accordingly, the present invention provides a solid-state imaging device, a color filter, a camera, and a method of manufacturing a color filter that can improve image quality. [Means for Solving the Problems] The present invention relates to a solid-state imaging device in which a pixel region is provided on a surface of a substrate, and a plurality of pixels are disposed, and the pixel includes light that receives an image of the object. a photoelectric conversion element that photoelectrically converts the received light to generate a signal charge; and a peripheral region located in the foregoing image

I 素區域之周圍，且形成有用以處理藉由前述光電轉換元件 而生成之信號電荷之周邊電路；且該固體攝像裝置具有· 彩色遽光器，其係以在與前述基板之面對應之面接受由前 述被攝體像而來之光’且以該光穿透前述基板之面之方 式：而與前述基板相對面地配置；前述彩色遽光器包含 有第1色層’係以在第!波長帶中成為較高之光穿透率之 方式形成’且供由前述被攝體像而來之光穿透’·及第2色 層，係以在與前述第1波長帶不同之第2波長帶中成為較高 之先穿透率之方式形成’且供由前述被攝體像而來之 透；該第!色層與第2色層以在與前述基板之面對應之面上 方式而加以排列的色彩排列，係以在前述像素區域 中與财述複數個像素對應之方式而配置有複數個，且在前 述周邊區域中係與前述像+ 在前述周邊區域中，^二=地複數個;且 個色彩排列，以前述第2色 《複數 以被覆之方式而形成 與“基板之面對應之面加 較佳為，前述第2色層係以配置在前述周邊區域令之複 128882.doc 200915553 數個色彩排列 覆之方式形成 將配置於最端部之色彩排列之側面予以被 ;:為，前述彩色據光器係包含：第3色層，其以在鱼 波長帶及前述第2波長帶…第3波長帶中成為 ::之光穿透率之方式而形成，且供由前述被攝體像而來 ^光穿透；且在前述色彩排列中，係以並排成前述第 層及前述第2牵厣^ 之面對丄方式’而配置在該第3色層與前述基板 *為，前述第！色層係以穿透綠色光之方式形成， 弟2色層係以穿透紅色光之方式形成，前述第3色層係 透藍色光之方式形成 較佳為’前述彩色攄光器係包含：第4色層，其係 透：前述被攝體像而來之光的光穿透率，較前述第i色層 與：述第2色層及前述第3色層之各者更低的方式而形成， 且則述第4色層’係、以在前述周邊區域中被覆前述色彩排 列之方式，而疊層於前述色彩排列。 本發明係-種彩色濾光器’係以與基板之面相對面之方 式而配置有像素區域及周邊區域，且在與前述基板之面對 應之面中接受由前述被攝像體而來之光且該光係著色於 前述基板之面而出身于，前述像f區域纟酉己置有複數個像 素，前述像素係包含接受由被攝體像而來之光，且將該接 受之光予以光電轉換而生成信號電荷之光電轉換元件，/而 前述周邊區域其係位於前述像素區域之周圍，且形成有用 以處理藉由前述光電轉換元件而生成之信號電荷之周邊電 128882.doc -10- 200915553 . 路；且該彩色濾光器包含有：第1色層，係以在第!波長帶 中成為較高之光穿透率之方式形成，且供由前述被攝體像 而來之光穿透·’及第2色層，係以在與前述第丄波長帶不同 之第2波長帶中成為較高之光穿透率之方式形成，且供由 ‘ 前述被攝體像而來之光穿透；該第1色層與第2色層以在與 前述基板之面對應之面上並排之方式而加以排列的色彩排 列，係以在前述像素區域中與前述複數個像素對應之方式 而配置有複數個，且在前述周邊區域中係與前述像素區域 同樣地配置有複數個；且在前述周邊區域中，係進一步將 配置於該周邊區域之複數個色彩排列，以前述第2色層與 前述基板之面對應之面加以被覆之方式而形成。 本發明係一種相機，係具有固體攝像裝置，該固體攝像 #置係於基板之面上設置有：像素區域，其配置有複數個 像素，前述像素係包含接受由被攝體像而來之光，且將該 接受之光予以光電轉換而生成信號電荷之光電轉換元件； 及周邊區域，其係位於前述像素區域之周圍，且形成有用 ^ 以處理藉由前述光電轉換元件而生成之信號電荷之周邊電 路；前述固體攝像裝置係包含有：彩色濾光器，其係在與 ' 前述基板之面對應之面中接受由前述被攝體像而來之光， 且以該光穿透前述基板之面之方式，而與前述基板相對面 地配置；前述彩色濾光器包含有：第1色層，係以在第i波 長帶中成為較高之光穿透率之方式形成，且供由前述被# 體像而來之光穿透；及第2色層，係以在與前述第1波長帶 不同之第2波長帶中成為較高之光穿透率之方式形成，且 128882.doc -11 - 200915553 供由前述被攝體像而來之光穿透；該第夏色層與第2色層以 在與前述基板之面對應之面上並排之方式而加以排列的色 秦排列’係以在剛述像素區域中與前述複數個像素對應之 方式而配置有複數個，且在前述周邊區域中係與前述像素 區域同樣地配置有複數個；且在前述周邊區域中，係進— 步將配置於該周邊區域之複數個色彩排列，以前述第2色 層與前述基板之面對應之面加以被覆之方式而形成。 Ο 本發明係、-種$色遽光器之製造方&，係以與基板之面 相對面之方式而配置有像素區域及周邊區域，且在與前述 基板之面對應之面中接受由前述被攝體像而來之光，且該 光係穿透前述基板之面者，前述像素區域其配置有複數個 像素，前述像素包含接受由被攝體像而來之光，且將接該 受之光予以光電轉換而生成信號電荷之光電轉換元件，而 前述周邊區域其係位於前述像素區域之周圍，且形成有用 以處理藉由前述光電轉換元件而生成之信號電荷之周邊電 路；其包括彩色濾光器製造步驟，其係製造包含第丨色層 及第2色層之前述彩色濾光器，前述第丨色層，係以在第工 波長帶中成為較高之光穿透率之方式形成，且供由前述被 攝體像而來之光穿透，而前述第2色層，係以在與前述第丄 波長帶不同之第2波長帶中成為較高之光穿透率之方式形 成，且供由前述被攝體像而來之光穿透；且前述彩色濾光 器製造步驟’係以下述方式進行製造，即，該第】色層與 第2色層以在與前述基板之面對應之面上並排之方式而加 以排列的色彩排列，係以在前述像素區域中與前述複數: 128882.doc 200915553 像f對應之方式而配置有複數個，且在前述周邊區域 與前述像素區域同樣地配置有複數個；且在前述： 器製造步驟中，係於前述周邊區域中，進一步將配置 周邊區域之複數個色彩排列’以前述第2色層與前述基： 之面對應之面加以被覆之方式，來製造該彩色據光器。 較佳為，前述彩色濾光器製造步驟係包含有：第1色層 形成步驟，在與前述基板之面對應之面中，將前述第乂 膚以與前述色彩排列對應之方式，隔以間隔而形成有複數 個’及第2色層形成步驟’係在與前述基板之面對應之面 中’將别述第2色層以與前述色彩排列對應之方式，隔以 間隔而形成有複數個；在前述第！色層形成步驟中，係於 前述像素區域與前述周邊區域之各者中形成前述第】色 層；在前述第2色層形成步驟中，係以將在前述像素區域 與前述周邊區域之各者中形成有前述第】色層之面加以被 覆，且疊層於該第!色層之方式，在塗佈包含與前述第仏a periphery of the I region and forming a peripheral circuit for processing signal charges generated by the photoelectric conversion element; and the solid-state imaging device has a color chopper that faces the surface of the substrate Receiving light from the subject image and arranging the light to penetrate the surface of the substrate: facing the substrate; the color chopper includes the first color layer In the wavelength band, a higher light transmittance is formed, and the light from the image of the subject is penetrated and the second color layer is formed at a second wavelength different from the first wavelength band. The tape is formed to have a higher first transmittance, and is formed by the image of the object; the first color layer and the second color layer are formed on the surface corresponding to the surface of the substrate. The arrangement of the colors is arranged in a plurality of pixels corresponding to the plurality of pixels in the pixel region, and is in the peripheral region and the image + in the peripheral region, And a color arrangement, as described above It is preferable that the two colors are formed by coating the surface corresponding to the surface of the substrate, and the second color layer is formed by arranging a plurality of colors arranged in the peripheral region to be 128882.doc 200915553 The color illuminator is disposed on the side of the color arrangement of the most end portion: the color ray device includes a third color layer which is formed in the fish wavelength band and the second wavelength band...the third wavelength band: : the light transmittance is formed in a manner to provide light penetration by the object image; and in the color arrangement, the first layer and the second layer are arranged side by side. In the third color layer and the substrate *, the first color layer is formed to penetrate green light, and the second color layer is formed to penetrate red light, and the third layer is formed. Preferably, the color layer is formed by transmitting blue light. The color cray sensor includes: a fourth color layer that transmits light transmittance of the light from the object image, which is higher than the ith color. The layer is formed in such a manner that each of the second color layer and the third color layer is lower, and the The four color layers are laminated on the color arrangement so as to cover the color arrangement in the peripheral region. The color filter of the present invention is configured such that pixels are disposed opposite to the surface of the substrate. a region and a peripheral region, and receiving light from the object to be imaged on a surface corresponding to a surface of the substrate, and the light is colored on a surface of the substrate, and the image f region is provided with a plurality of Each of the pixels includes a photoelectric conversion element that receives light from the subject image and photoelectrically converts the received light to generate a signal charge, and the peripheral region is located around the pixel region. And forming a peripheral power 128882.doc -10- 200915553 for processing signal charges generated by the photoelectric conversion element; and the color filter includes: a first color layer, in the ... wavelength band In the second wavelength band different from the second wavelength band, the light penetration and the second color layer are formed by the light transmittance of the object image. The light transmittance of the high light is formed by the light from the image of the subject; the first color layer and the second color layer are arranged side by side on the surface corresponding to the surface of the substrate. The arrangement of the colors is arranged in a plurality of pixels corresponding to the plurality of pixels in the pixel region, and a plurality of the peripheral regions are arranged in the same manner as the pixel regions; and in the peripheral region Further, a plurality of color arrangements arranged in the peripheral region are further formed so as to cover the surface of the second color layer corresponding to the surface of the substrate. The present invention relates to a camera having a solid-state imaging device. The solid-state imaging device is disposed on a surface of a substrate, and is provided with a pixel region in which a plurality of pixels are disposed, and the pixel includes light receiving the image of the object. And a photoelectric conversion element that photoelectrically converts the received light to generate a signal charge; and a peripheral region located around the pixel region, and forming a signal charge generated by the photoelectric conversion element a peripheral circuit; the solid-state imaging device includes: a color filter that receives light from the subject image on a surface corresponding to a surface of the substrate, and penetrates the substrate with the light And the surface filter is disposed opposite to the substrate; the color filter includes: the first color layer is formed to have a higher light transmittance in the i-th wavelength band, and is provided by the foregoing The light from the body image is penetrated; and the second color layer is formed to have a higher light transmittance in the second wavelength band different from the first wavelength band, and 128882.doc -11 - 20 0915553 for light penetration by the image of the object; the color layer of the first color layer and the second color layer arranged side by side on the surface corresponding to the surface of the substrate is A plurality of pixels are arranged in a manner corresponding to the plurality of pixels, and a plurality of the pixel regions are arranged in the same manner as the pixel region; and in the peripheral region, the system is configured in the peripheral region. The plurality of color arrays in the peripheral region are formed by coating the surface of the second color layer corresponding to the surface of the substrate. The present invention relates to a method for manufacturing a color shader in which a pixel region and a peripheral region are disposed so as to face a surface of a substrate, and the surface corresponding to the surface of the substrate is received by the aforementioned The light from the subject image, and the light is transmitted through the surface of the substrate, wherein the pixel region is provided with a plurality of pixels, and the pixel includes light received by the object image, and the light is received a light-converting element that photoelectrically converts to generate a signal charge, and the peripheral region is located around the pixel region, and forms a peripheral circuit for processing signal charges generated by the photoelectric conversion element; a filter manufacturing step of manufacturing the color filter including a second color layer and a second color layer, wherein the second color layer is formed to have a higher light transmittance in a wavelength band of the working wavelength. And the light from the image of the subject is penetrated, and the second color layer is formed to have a higher light transmittance in the second wavelength band different from the second wavelength band, and The light from the image of the subject is penetrated; and the color filter manufacturing step 'is manufactured in such a manner that the first color layer and the second color layer correspond to the surface of the substrate The color arrangement in which the surfaces are arranged side by side is arranged in plural in the pixel region corresponding to the plural number: 128882.doc 200915553, and is arranged in the same manner as the pixel region in the peripheral region. In the above-described device manufacturing step, in the peripheral region, a plurality of color arrays arranging the peripheral regions are further covered by a surface corresponding to the surface of the second color layer and the base: To manufacture the color light illuminator. Preferably, the color filter manufacturing step includes a first color layer forming step of separating the skin of the first skin in a manner corresponding to the color arrangement on a surface corresponding to the surface of the substrate. Further, a plurality of 'and second color layer forming steps' are formed in a plane corresponding to the surface of the substrate, and a plurality of the second color layers are formed so as to correspond to the color arrangement, and a plurality of intervals are formed at intervals ; in the aforementioned section! In the color layer forming step, the first color layer is formed in each of the pixel region and the peripheral region; and in the second color layer forming step, each of the pixel region and the peripheral region is formed The surface of the color layer formed thereon is coated and laminated on the first color layer, and the coating includes the foregoing

U 層對應之色彩之著色劑的塗佈膜後，不將塗佈於該周邊區 域之塗佈膜中，疊層於 且曰於刚述弟1色層之塗佈膜去除而殘 2 ’且以去除在該像素區域中經塗佈之塗佈臈中，疊層於 前述第1色層之塗佈膜之方式1由實施圖案加^形成 前述第2色層。 較佳為’在前述第2色層形成步驟中，係以配置在前述 周邊區域之複數個色彩排列中，將配置於最端部之色彩排 列之側面予以被覆之方式，塗佈包含與前述第2色層對應 之色彩之著色劑的塗佈膜後’藉由配置在該周邊區域中之 128882.doc 200915553 複數個色彩排列，而將配置於最端部之色彩排列之側面予 以被覆而形成的塗佈膜加以殘留之方式來實施前述圖案 加工’藉此而形成前述第2色層。 較佳為’前述彩色遽光器製造步驟，係藉由在與前述第 1波長帶及前述第2波長帶不同之第3波長帶中成為較高之 光穿透率之方式而形成，且在由前述被攝體像而來之光穿 透的第3色層與前述基板之面對應之面，以將並排成前述 Γ 第1色層及前述第2色層之色彩排列，與前述像素區域及前 述周邊區域對應之方式配置複數個，而製造前述彩色渡光 器。 較佳為’前述彩色濾光器製造步驟係包含有：第3色層 形成步驟’其係在與前述基板之面對應之面中，以將前^ 第3色層與前述色彩排列對應之方式，隔以複數個間隔而 ㈣’ & m述第3色層形成步驟中’係、將在前述像素區域 與f述周邊區域中形成有前述第1色層之面加以被覆，且 乂且層於刖述第i色層之方式，在塗佈包含與前述第3色層 對應之色彩之著色劑的塗佈膜後，將塗佈於該像素區域及 周邊區？之塗佈膜中，疊層於前述第丨色層之塗佈膜予以 去除ϋ此而形成前述第3色層；在前述第2色層形成步驟 中，係將在前述像素區域與前述周邊區域中，形成有前述 第1 一色層與刖述第3色層各者之面加以被覆，且以疊層於前 述第1色層與W述第3色層各者之方式’在塗佈包含與前述 第2色層對應之色彩之著色劑的塗佈膜後，不將塗佈於該 周邊區域之塗佈膜中，疊層於前述第!色層與前述第3二 128882.doc 14 200915553 各者之塗佈膜予〗:,士 域之塗佈膜中，聂二：加以殘留，且將塗佈於該像素區 塗佈膜予以去，，述第1色層與前述第3色層各者之 ^ ' 而形成前述第2色層。 之方式二ί刖述第1色層形成步驟中，係、以穿透綠色光 d : 述第1色層，在前述第2色層形成步驟中，係 以牙透紅色光$ t 4 、 /之方式形成前述第2色層，在前述第3色層形 乂 、係、Μ穿透藍色光之方式形成前述第3色層。After the coating film of the coloring agent corresponding to the U layer is not applied to the coating film applied to the peripheral region, the coating film laminated on the color layer of the first layer is removed and remains 2' The second color layer is formed by patterning by removing the coating film coated in the pixel region and laminating the coating film of the first color layer. Preferably, in the second color layer forming step, the side surface of the color arrangement arranged at the end portion is covered in a plurality of color arrays arranged in the peripheral region, and the coating includes the The coating film of the coloring agent corresponding to the two color layers is formed by coating the side of the color arrangement arranged at the end portion by a plurality of color arrangement of 128882.doc 200915553 disposed in the peripheral region. The patterning process is performed in such a manner that the coating film remains, thereby forming the second color layer. Preferably, the step of manufacturing the color chopper is formed by forming a higher light transmittance in a third wavelength band different from the first wavelength band and the second wavelength band, and a surface of the third color layer that penetrates the light from the image and the surface of the substrate, and the color arrangement of the first color layer and the second color layer are arranged side by side, and the pixel region and A plurality of the peripheral regions are arranged in correspondence to each other to manufacture the aforementioned color damper. Preferably, the "color filter manufacturing step includes a third color layer forming step" in a manner corresponding to a surface of the substrate to associate the front color layer with the color arrangement. And (4) '& m describing the third color layer forming step', covering the surface of the pixel region and the peripheral region in which the first color layer is formed, and layering In the method of arranging the i-th color layer, after applying a coating film containing a coloring agent corresponding to the third color layer, the coating film is applied to the pixel region and the peripheral region. In the coating film, the coating film laminated on the first color layer is removed to form the third color layer; and in the second color layer forming step, the pixel region and the peripheral region are formed The surface of each of the first color layer and the third color layer is covered, and is laminated on the first color layer and the third color layer. After the coating film of the coloring agent corresponding to the second color layer, the coating film applied to the peripheral region is not laminated on the first color layer and the third and second portions 128882.doc 14 200915553 The coating film of the coating is: in the coating film of the Shi domain, Nie 2: the residue is applied, and the coating film is applied to the pixel region, and the first color layer and the third color layer are respectively described. The second color layer is formed by the above. In the first color layer forming step, the first color layer is formed by penetrating the green light d: in the second color layer forming step, the tooth-transparent red light is $t 4 , / The second color layer is formed in such a manner that the third color layer is formed such that the third color layer has a shape in which the 乂, Μ, and Μ penetrate blue light.

較佳為别述形色濾光器製造步驟係包含：第4色層形 成步驟’其係用以形成穿透由前述被攝體像而來之光之光 穿透，率較前述&色層與前述第2色層及前述第3色層之 各個更低之第4色層；且在前述第4色層形成步驟中，係以 在刖述周邊區域中被覆前述色彩排列，且疊層於前述色彩 排列之方式，而形成前述第4色層。 在上述之本發明中，係將包含複數個色層之色彩排列， 在像素區域巾以與複數個像㈣應之方^配置有複數 個，並且在肖冑區域中’係、與像素區域同樣地配置複數 個。再者’在此周邊區域中，係進„步將配置在該周邊區 域之複數個色彩排列，以複數個色層中之一色層與基板之 面對應之面而加以被覆之方式形成。如此，在周邊區域中Preferably, the color filter manufacturing step includes: a fourth color layer forming step 'which is used to form light penetration through the light from the object image, and the ratio is higher than the aforementioned color a fourth color layer having a layer lower than each of the second color layer and the third color layer; and in the fourth color layer forming step, the color arrangement is covered in the peripheral region of the description, and the layer is laminated The fourth color layer is formed in the manner of the color arrangement described above. In the above invention, the color arrangement including the plurality of color layers is arranged in a plurality of pixels in the pixel area and in the plurality of images (four), and is the same as in the pixel area. Multiple places are configured. Furthermore, in this peripheral region, a plurality of color arrangements arranged in the peripheral region are formed, and a plurality of color layers are coated with a surface corresponding to the surface of the substrate to form a coating. Thus, In the surrounding area

疊層有複數個色層，因此可減低周邊區域中之光反射率。 [發明之效果J 依據本發明，係可提供一種可使圖像品質提昇之固體攝 像裝置、彩色濾光器、相機、及彩色濾光器之製造方法。 【實施方式】 J28882.doc -15 - 200915553 以下參照圖式說明本發明之實施形態。 <實施形態1> (裝置構成） 圖1係表示在本發明實施形態1中，相機40之構成的構成 圖。 如圖1所示’相機40係具有固體攝像裝置1、光學系統 42、驅動電路43、及信號處理電路44。茲就各部依序說 明。 () 固體攝像裝置1係介隔光學系統42，在受光面接受由被 攝體像而來之光’且將由該被攝體像而來之光予以光電轉 換而生成信號電荷。在此，固體攝像裝置1係根據從驅動 電路43所輸出之驅動信號而驅動。具體而言，係讀取信號 電荷而作為原始資料（raw data)輸出。關於此固體攝像裝 置1之詳細内容將於後陳述。 光學糸統42係例如包括光學透鏡（iens)，且可使被攝體 像成像於固體攝像裝置1之受光面上。 C*) 驅動電路43係將各種驅動信號輸出至固體攝像裝置1， 且可使固體攝像裝置1驅動。 信號處理電路4 4係針對從固體攝像裝置丨所輸出之原始 Μ料而實施信號處理’且將有關被檢體之圖像作為數位信 號而加以生成。 兹說明固體攝像裝置1之整體構成。 圖2係表示在本發明實施形態丨中，固體攝像裝置1之整 體構成之概略的俯視圖。 正 128882.doc -16 - 200915553 本實施形態之固體攝像裝置丨係CMOS型影像感測器，且 如圖2所示包括基板1 〇 1。此基板1 〇 1係例如由石夕所組成之 半導體基板，且如圖2所示，在基板1〇1之面中，係設有像 素區域PA及周邊區域sa。 在此基板101中，像素區域PA係如圖2所示為矩形形 狀’而複數個像素P係以並排成矩陣狀之方式在垂直方向V 與水平方向Η配置複數個。 此外’在基板101中，周邊區域SA係如圖2所示位於像 素區域ΡΑ之周圍，且於端部設有焊墊（pad)電極Ερ ^而 且，除此之外，在周邊區域SA中，係設有用以處理在像素 P中所生成之信號電荷之周邊電路（未圖示具體而言， 以此周邊電路而言’係例如形成有垂直選擇電路、S/H(取 樣/保持（sample/hold)) · CDS(C〇rrelated Double Sampling : 關聯式雙重取樣）電路、水平選擇電路、時序產生器 (Timing Generator ： TG) ^ AGC(Automatic Gain Control » 自動增盈控制）電路、A/D(類比（Analogue)/數位（Digital)) 轉換電路、及數位放大器（amplifier)，且連接於焊墊電極 EP。 圖3係為表示在本發明之實施形態1中在像素區域pA中 所設之像素P之電路圖。 在像素區域PA中所設之像素p係如圖3所示包括：光二 極體（photo diode)21、傳送電晶體22、放大電晶體23、位 址（address)電晶體24'及重設（reset)電晶體25。 光一極體（photo diode)21係在受光面接受由被攝體像而 128882.doc -17- 200915553 來之光，且將該接受之光予以光電轉換而生成信號電荷加 以蓄積。光二極體2工係如圖3所示介隔傳送電晶體22而連 接於放大電晶體23之閘極。再者，在光二極體_係將該 畜積之信號電荷藉由傳送電晶體22而作為輸出信號傳送至 連接於放大電晶體23之閘極之浮動擴散放大器⑺〇 diffusion) FD。 傳送電晶體22係如圖3所示以在光二極體2ι與浮動擴散 放大器FD之間介設之方式設置。再者，傳送電晶體22係^ 〇 丨從傳送線26賦予傳送脈衝⑽se)至閘極，將在光二極體 21中所蓄積之信號電荷作為輸出信號傳送至浮動擴散放大 器FD。 放大電晶體23係如圖3所示，閘極係連接於浮動擴散放 大器FD，且將介隔浮動擴散放大器FD所輸出之輸出信號 予以增幅。在此，放大電晶體23係介隔位址電晶體Μ而連 接於垂直信號線27，而構成設於像素區域pA以外之定電流 源1與源極隨麵器（S〇Urce 且藉由將位址信號供 -至位址電晶體24，而將從浮動擴散放大器FD所輸出之輪 出信號增幅。 ’ 位址電晶體24係如圖3所示，閘極係連接於供位址信號 t、之位址線28。位址電晶體24係於位址信號供給之際成 為導通（on)狀態，而如上述之方式將藉由放大電晶體^所 增巾§之輸出信號予以輸出至垂直信號線27。再者，該輸出 L號係；I 垂直指號線27而輸出至S/H · CDS電路。 重設電晶體25係如圖3所示，閘極係連接於供重設信號 I28882.doc •18· 200915553 供給之重設線29 ’此外，以在電源州與浮動擴散放大器 FD之間介設之方式連接。再者，重設電晶體25係於從重設 線29將重設信號供給至閉極之際，將浮動擴散放大器fd之 電位重設為電源Vdd之電位。 如上所述驅動像素之動作，由於傳送電晶體22、位址電 晶體24、及重設電晶體25之各間極係以並排於水平方向η 之複數個像素所組成之列單位來連接，因此乃就並排為該The laminate has a plurality of color layers, thereby reducing the light reflectance in the peripheral region. [Effect of the Invention According to the present invention, it is possible to provide a solid-state imaging device, a color filter, a camera, and a color filter manufacturing method which can improve image quality. [Embodiment] J28882.doc -15 - 200915553 Hereinafter, embodiments of the present invention will be described with reference to the drawings. <Embodiment 1> (Device Configuration) Fig. 1 is a view showing a configuration of a camera 40 in the first embodiment of the present invention. As shown in Fig. 1, the camera 40 has a solid-state imaging device 1, an optical system 42, a drive circuit 43, and a signal processing circuit 44. I will explain the instructions in order. (1) The solid-state imaging device 1 receives the optical system 42 and receives the light from the subject image on the light receiving surface, and photoelectrically converts the light from the subject image to generate signal charges. Here, the solid-state imaging device 1 is driven in accordance with a drive signal output from the drive circuit 43. Specifically, the signal charge is read and output as raw data. The details of this solid-state imaging device 1 will be described later. The optical system 42 includes, for example, an optical lens (iens), and can image the subject image on the light receiving surface of the solid-state imaging device 1. C*) The drive circuit 43 outputs various drive signals to the solid-state imaging device 1 and can drive the solid-state imaging device 1. The signal processing circuit 44 performs signal processing for the raw material output from the solid-state imaging device ’ and generates an image of the subject as a digital signal. The overall configuration of the solid-state imaging device 1 will be described. Fig. 2 is a plan view showing the overall configuration of the solid-state imaging device 1 in the embodiment of the present invention. 129882.doc -16 - 200915553 The solid-state imaging device of the present embodiment is a CMOS image sensor, and includes a substrate 1 〇 1 as shown in FIG. The substrate 1 〇 1 is, for example, a semiconductor substrate composed of Shi Xi, and as shown in Fig. 2, a pixel region PA and a peripheral region sa are provided on the surface of the substrate 1〇1. In the substrate 101, the pixel area PA is formed in a rectangular shape as shown in Fig. 2, and a plurality of pixels P are arranged in a matrix, and a plurality of pixels are arranged in the vertical direction V and the horizontal direction. Further, in the substrate 101, the peripheral region SA is located around the pixel region 如图 as shown in FIG. 2, and a pad electrode Ερ ^ is provided at the end portion, and in addition, in the peripheral region SA, A peripheral circuit for processing the signal charge generated in the pixel P is provided (not shown, specifically, in the case of the peripheral circuit, for example, a vertical selection circuit, S/H (sampling/holding (sample/) is formed. Hold)) · CDS (C〇rrelated Double Sampling) circuit, horizontal selection circuit, timing generator (Timing Generator: TG) ^ AGC (Automatic Gain Control » automatic gain control) circuit, A/D ( An analog/digital converter circuit and a digital amplifier are connected to the pad electrode EP. Fig. 3 is a view showing a pixel provided in the pixel region pA in the first embodiment of the present invention. A circuit diagram of P. The pixel p provided in the pixel area PA includes a photo diode 21, a transfer transistor 22, an amplifying transistor 23, and an address transistor 24' as shown in FIG. And resetting the transistor 25. The photo diode 21 receives light from the subject image 128882.doc -17- 200915553 on the light receiving surface, and photoelectrically converts the received light to generate signal charges to be accumulated. Photodiode 2 The system is connected to the gate of the amplifying transistor 23 via the transmitting transistor 22 as shown in FIG. 3. Furthermore, the signal charge of the accumulating body in the photodiode is transmitted as the output signal by the transmitting transistor 22. It is transmitted to a floating diffusion amplifier (7) FDdiffusion FD connected to the gate of the amplifying transistor 23. The transfer transistor 22 is provided as shown in Fig. 3 so as to be interposed between the photodiode 2i and the floating diffusion amplifier FD. Further, the transfer transistor 22 is supplied with a transfer pulse (10) se from the transfer line 26 to the gate, and the signal charge accumulated in the photodiode 21 is sent as an output signal to the floating diffusion amplifier FD. The amplifying transistor 23 is as shown in Fig. 3. The gate is connected to the floating diffusion amplifier FD, and the output signal outputted through the floating diffusion amplifier FD is amplified. Here, the amplifying transistor 23 is connected to the vertical signal line 27 via the address transistor ,, and constitutes a constant current source 1 and a source follower (S〇Urce) disposed outside the pixel region pA. The address signal is supplied to the address transistor 24, and the round-out signal output from the floating diffusion amplifier FD is amplified. 'The address transistor 24 is as shown in FIG. 3, and the gate is connected to the address signal t. Address line 28. The address transistor 24 is in an on state when the address signal is supplied, and is outputted to the vertical by the output signal of the amplified transistor θ as described above. Signal line 27. Further, the output L number system; I is perpendicular to the finger line 27 and is output to the S/H · CDS circuit. The reset transistor 25 is as shown in FIG. 3, and the gate is connected to the reset signal. I28882.doc •18· 200915553 Supply reset line 29 'In addition, it is connected between the power supply state and the floating diffusion amplifier FD. Furthermore, the reset transistor 25 is reset from the reset line 29. When the signal is supplied to the closed end, the potential of the floating diffusion amplifier fd is reset to the potential of the power supply Vdd. As described above, when the pixel is driven, since the transfer transistor 22, the address transistor 24, and the reset transistor 25 are connected in a column unit composed of a plurality of pixels arranged in the horizontal direction η, Is side by side

ϋ 列単位之複數個像素同時進行。具體而言，係以藉由垂直 選擇電路所供給之位址信號，以水平線(像素列)單位在垂 直方向V依序選擇。再者，#由來自時序產生器之各種脈 衝信號而控制各像素之電晶體。藉此，各像素t之輸出信 號即透過垂直信號線27而依每像素行讀取至· 路。 茲說明本實施形態之固體攝像裝置1之詳細内容。 圖4係為表示在本發明之實施形態丨中固體攝像裝置1之 剖面圖。圖4係為圖2中之A_B部分之剖面之主要部分，表 不從像素區域PA之端部跨越到周邊區域SA之部分。另 外’在像素區域PA中，係如上述所示，在基板⑼上雖配 置有像素P，惟關於將光二極體21去除，構成該像素p之各 構件係予以省略圖示。此外，在周邊區域sa中，係如上述 所不，雖配置有周邊電路，惟予以省略圖示。 如圖4所示，本實施形態之固體攝像裝置〗係包括彩色 光器3 01。 ~ 心色濾光器30 1係如圖4所示與基板丨〇丨相對面配置，且 128882.doc -19· 200915553 於與基板101之面對應之面中，在接受由被攝體像而來之 光之後’將該光著色而出射於基板101之面。在本實施形 態中’彩色濾光器3 01係如圖4所示，設成以與基板1 〇 1之 面對應之方式經平坦化之面。 在此，係如圖4所示，在像素區域p a中，彩色濾光器 ' 301係例如藉由金屬材料形成’且介隔連接於像素P之複數 - 個布線層HF、及藉由絕緣材料形成而設於布線層HF之層 間之層間絕緣膜SF之各個，而以與基板i 〇丨之面相對面之 〇 方式形成。 再者，如圖4所示，在周邊區域SA中，彩色濾光器3〇1 係藉由金屬材料形成，且介隔連接於周邊電路之複數個布 線層HF、用以將入射至該周邊電路之光予以遮光之遮光層 LS、及設於該布線層HF或遮光層Ls之層間之層間絕緣膜 SF’以與基板ιοί之面相對面之方式形成。 在此，係如圖2所示，彩色濾光器3〇1係以不被覆設於端 部之焊塾電極EP之方式形成’例如，從形成有焊墊電極 J EP之部分，以隔著1 mm左右之間隔之方式，在周邊區域 SA中延伸。藉由如此形成，在基板1〇1形成像素區域 後，將基板101切割（dicing)為與該端部對應之部分之情形 - 下，由於彩色濾光器3〇1係離開該要切割之部分而形^， 因此防止彩色濾光器301從基板1〇1剝離。 此外，在該彩色濾光器30〗之表面中，係如圖4所示，以 被覆該表面之方式形成有透鏡層LL。 圖5係為在本發明之實施形態丨中將彩色濾光器予以 128882.doc -20- 200915553 放大表不之俯視圖。在圖μ 社園）千a-b部分係與圖2之Α·Β部分 對應’且圖5係表示該Α_Β部分 1刀 <周圍之平面。此外’在該 圖5中，（a)係從上面將彩色滹井 々匕4尤斋30 I予以放大表示，相對 於此’（b)係將（a)中位於上片夕+ 7 上層之下之下層部分以點線加以 表示。 此外’圖6係為在本發明之實施形態κ將彩色遽光器 則之分光特性加以表示之圖。在圖6中，橫軸係為光之波 長（λΙηπι])，縱軸係為光穿透率（τ[%])。The plurality of pixels of the 単 column are simultaneously performed. Specifically, the address signals supplied by the vertical selection circuit are sequentially selected in the horizontal direction (pixel column) in the vertical direction V. Furthermore, # is controlled by various pulse signals from the timing generator to control the transistors of the respective pixels. Thereby, the output signal of each pixel t is read through the vertical signal line 27 in each pixel row. The details of the solid-state imaging device 1 of the present embodiment will be described. Fig. 4 is a cross-sectional view showing the solid-state imaging device 1 in the embodiment of the present invention. Fig. 4 is a main portion of the cross section of the A_B portion in Fig. 2, and represents a portion spanning from the end of the pixel area PA to the peripheral area SA. In the pixel area PA, as described above, the pixel P is disposed on the substrate (9). However, the components constituting the pixel p are omitted, and the components of the pixel p are omitted. Further, in the peripheral area sa, as described above, peripheral circuits are disposed, but illustration thereof is omitted. As shown in Fig. 4, the solid-state imaging device of the present embodiment includes a color lighter 301. ~ The heart color filter 30 1 is disposed opposite to the substrate 如图 as shown in FIG. 4 , and 128882.doc -19· 200915553 is received by the object image in the surface corresponding to the surface of the substrate 101 After the light is emitted, the light is colored and emitted on the surface of the substrate 101. In the present embodiment, the color filter 301 is formed as a flat surface corresponding to the surface of the substrate 1 〇 1 as shown in Fig. 4 . Here, as shown in FIG. 4, in the pixel region pa, the color filter '301 is formed, for example, by a metal material, and is interposed by a plurality of wiring layers HF connected to the pixel P, and insulated by The material is formed by each of the interlayer insulating films SF provided between the layers of the wiring layer HF, and is formed so as to face the surface opposite to the surface of the substrate i. Furthermore, as shown in FIG. 4, in the peripheral area SA, the color filter 3〇1 is formed of a metal material, and a plurality of wiring layers HF connected to the peripheral circuit are interposed to be incident thereon. The light-shielding layer LS which shields the light of the peripheral circuit, and the interlayer insulating film SF' provided between the layers of the wiring layer HF or the light-shielding layer Ls are formed to face the surface of the substrate ιοί. Here, as shown in FIG. 2, the color filter 3〇1 is formed so as not to be overlaid on the end of the pad electrode EP. For example, from the portion where the pad electrode J EP is formed, The interval of about 1 mm extends in the peripheral area SA. By forming in this way, after the substrate 1 is formed into a pixel region, the substrate 101 is diced into a portion corresponding to the end portion, since the color filter 3〇1 is separated from the portion to be cut. On the other hand, the color filter 301 is prevented from being peeled off from the substrate 1〇1. Further, in the surface of the color filter 30, as shown in Fig. 4, a lens layer LL is formed to cover the surface. Fig. 5 is a plan view showing a color filter of 128882.doc -20-200915553 in an embodiment of the present invention. In Fig. 5, the thousand a-b portion corresponds to the Α·Β portion of Fig. 2, and Fig. 5 shows the plane of the Α_Β portion 1 knife < In addition, in Fig. 5, (a) is enlarged from the above, and the color 滹井々匕4尤斋30 I is enlarged. In contrast, '(b) is the upper layer of the upper film ++7 in (a) The lower lower layer is indicated by dotted lines. Further, Fig. 6 is a view showing the spectral characteristics of the color chopper in the embodiment κ of the present invention. In Fig. 6, the horizontal axis is the wavelength of light (λΙηπι), and the vertical axis is the light transmittance (τ [%]).

Ο 々色濾光器301係如圖5所示’包括紅色濾光器層3〇1R、 綠色濾光器層301G、及藍色濾光器層3〇1B。 在彩色濾光器301中紅色濾光器層3〇1R係如圖6所示，以 在與紅色對應之波長帶中成為較高之光穿透率之方式形 成，而供由被攝體像而來之光作為紅色光穿透。換言之， 紅色濾光器層301R係將由被攝體像而來之光著色成紅色， 且以供紅色光穿透之方式，將由被攝體像而來之光予以分 光此紅色濾光器層3 01R係例如在將包括紅色之著色顏 料、作為黏結劑樹脂之光阻材料（感光性樹脂）之塗佈液， 藉由奴塗法等之塗覆方法進行塗佈而形成塗膜後，以微影 技術，藉由將該塗膜進行圖案加工而形成。例如，紅色遽 光器層301R係以從5〇〇 nm成為1〇〇〇 nm之層厚之方式形成。 此外，在衫色濾光器3〇1中綠色濾光器層3〇1G係如圖6所 示以在與綠色對應之波長帶中成為較高之光穿透率之方 式形成，且供由被攝體像而來之光作為綠色光穿透。在 此，綠色濾光器層301CH系如圖6所示，係為與紅色濾光器 128882.doc -21 - 200915553 層301R穿透之波長帶不同之波長帶，以在與綠色 T應之波 長帶中成為較高之光穿透率之方式形成。具體而+ 5 ’綠色 濾光器層301G係在光穿透之波長帶中，光穿透垄县a 干取向之波 長與紅色濾光器層301R不同，且供綠色光穿透之方1，藉 由將由被攝體像而來之光予以分光，而將光著色成綠色 此綠色濾光器層3 01G係例如在將包括綠色之著色顏料與光 阻材料之塗佈液，藉由旋塗法等之塗覆方法進行塗佈而來 成塗膜後’以微影技術’藉由將該塗膜進行圖案加工而來 成。例如，綠色濾光器層301G係以從600 nm成為9〇〇 nm2 層厚之方式形成。 此外’在彩色濾光器301中藍色濾光器層301B係如圖6所 示’以在與藍色對應之波長帶中成為較高之光穿透率之方 式形成，且供由被攝體像而來之光作為藍色光穿透。在 此’藍色濾光器層3 01B係如圖6所示，係與紅色遽光器芦 301R及綠色遽光器層3〇ig穿透之波長帶不同之波長帶， 以在與藍色對應之波長帶中成為較高之光穿透率之方式形 成。具體而言，藍色濾光器層3〇1B係在光穿透之波長帶 中，光穿透率最高之波長與紅色濾光器層3〇1R及綠色濾光 器層301G不同，以供藍色光穿透之方式，藉由將由被攝體 像而來之光予以分光，而將光著色成藍色。此藍色濾光器 層3 01 B係例如在將包括藍色之著色顏料與光阻材料之塗佈 液藉由旋塗法等之塗覆方法進行塗佈而形成塗膜後，以 微影技術，藉由將該塗膜進行圖案加工而形成。例如，藍 色濾光器層301B係以從3〇〇 nm成為1〇〇〇 nm之層厚之方式形 128882.doc -22- 200915553 成。 上述之紅色遽光器層301R與綠色濾光器層301G與藍色 濾光器層301B之各個係如圖5(a)及所示，以在與基板 1 〇 1之面對應之面並排作為拜耳排列BH之方式配置。亦 即，在拜耳排列BH中，係以丨個矩形狀之紅色濾光器層 301R、1個矩形狀之藍色濾光器層3〇1B、2個矩形狀之綠 色濾光器層301G為1組，且以該2個綠色濾光器層3〇 1(}成 為格子狀之方式隔以間隔並排，且在以該綠色濾光器層 O 301G成為格子狀之方式並排之間之間隔，配置有丨個紅色 濾光器層301R與1個藍色濾光器層3〇1B之各個，再者，如 此配置有紅色濾光器層3〇1尺與綠色濾光器層3〇1G與藍色 濾光器層301B之各個之拜耳排列BH，係以在水平方向11與 垂直方向V重複之方式設置複數個。 具體而言，在像素區域PA中，係如圖5(a)所示，以拜耳 排列BH與複數個像素p對應之方式配置。換言之，如圖4 所示，構成拜耳排列BH之紅色濾光器層301R與綠色濾光 益層301G與藍色濾光器層3〇1B2各個係以與構成像素p之 光二極體21之受光面之各個相對面之方式配置。此外，在 像素區域PA中，係以紅色濾光器層3〇1R與綠色濾光器層 301 G與藍色濾光器層3〇16之各個彼此成為相同之層厚之 方式形成。 再者，在周邊區域SA中亦如圖5(b)所示，與像素區域pA 同樣，紅色濾光器層301R與綠色濾光器層3〇1G與藍色濾 光器層301B之各個係配置於拜耳排列BH。換言之，在像 128882.doc •23· 200915553 素區域PA中所配置之拜耳排列bh係以在周邊區域SA中亦 重複之方式配置有複數個。在本實施形態中，係在基板 101之端部’以重複到形成有焊墊電極EP之部分之前面之 方式’設有拜耳排列BH。 再者’在此周邊區域SA中，係如圖5(a)所示，將配置於 周邊區域SA之複數個拜耳排列bh以藍色濾光器層301B與 基板101之面對應之面被覆而形成。 換言之’如圖4所示，在周邊區域SA中，藍色濾光器層 3〇1B係以較綠色濾光器層301G及紅色濾光器層301R之層 厚更厚之方式形成’如圖5(甸與圖5(b)所示，在下層中係 以成為拜耳排列BH之方式配置紅色濾光器層301R、綠色 濾光層301G、藍色濾光器層3〇1B，且疊層有藍色濾光 器層301B作為其上層。 再者，進一步在此周邊區域SA中，如圖4所示，係以配 置在周邊區域SA之複數個拜耳排列BH將配置於最端部之 拜耳排列BH之側面被覆之方式形成有藍色濾光器層 301B 〇 (製造方法） 以下炫发明將上述之彩色濾光器301形成於基板之製 造方法。 圖7係表示本發明之實施形態1中，在形成彩色渡光器 3〇!之方法之各步驟中加以製造之主要部分的剖面圖。 又’在圖7中(M)部分係如圖5(b)之C_D部分，將切割為階 梯狀之剖面作為一個平面顯示。 128882.doc -24· 200915553 首先如圖7(a)所tf，形成綠色抗姓劑（旧以）膜rg。 在此，係如上述所示地，將各個構成像素p與周邊電路 之半導體元件形成於基板1〇1後，形成布線層hf、遮光層 LS、層間絕緣膜SF’且將其表面予以平坦化。其後，在該 ’’幺平化之面’例如藉由旋塗法’塗佈包含綠色之著色劑 與光阻材料之塗佈液，而形成綠色抗#劑膜抓。例如， 將包含綠色之顏料色素作為著色劑，且使用包含丙烯 ' ⑽咖）系樹脂之塗佈液作為光阻材料，而形成綠色抗敍 () 冑膜RG。X，亦可包含聚合起始劑或硬化劑。 在本實施形'態+ ’係以被覆各個像素區域PA與周邊區 域S Α之方式而形成綠色抗钮劑膜RG。 接著，如圖7(b)所示，藉由對綠色抗触劑膜奶進行圖案 加工而形成綠色濾光器層301G。 在此，係以與拜耳排列BH對應之方式而對綠色抗蝕劑 臈RG進行圖案加工。亦即，於基板1〇1，在與形成有像素 P與周邊電路之面對應之面中，以複數個綠色濾光器層 、 3 〇 1G呈格子狀而彼此隔以間隔排列之方式，對綠色抗蝕劑 膜RG進行圖案加工。具體而言，係以藉由光微影技術而 對於綠色抗蝕劑膜RG依序地實施曝光處理與顯影處理， 使矩形狀之綠色濾光器層301G之邊，以及與其綠色濾光器 層301G相鄰接之其他矩形狀之綠色濾光器層3〇1G之邊之 間的間距，成為相等之距離之方式，來形成此綠色濾光器 層 301G。 在本實施形態中，係在各個像素區域PA與周邊區域s a 128882.doc •25· 200915553 中，將、綠色渡光器層301G配置成格子狀。即，以在各個像 素區域PA與周邊區域从中，藉由相同之拜耳㈣βΗ加以 配置之方式，而對綠色抗蝕劑膜RG如上述地進行圖案加 工〇 接著，如圖7(c)所示形成紅色抗蝕劑膜RR。 在此，係如上述所示例如藉由旋塗法將包括紅色之著色 劑與光阻材料之塗佈液塗佈在形成有綠色遽光器们咖之 面，而形成紅色抗蝕劑膜狀。例如，包括紅色之顏料色 素作為著色劑，且使用包㈣稀系樹脂之塗佈液作為光阻 材料而形成紅色抗蝕劑膜RR。 在本實施形態中，係與綠色抗蝕劑膜RG同樣，以被覆 像素區域PA與周邊區域SA之各個之方式形成紅色抗触劑 膜RR。 具體而言’係將在像素區域PA與周邊區域从之各個中 形成有綠色據光器層301G之面被覆，並且以疊層於在該綠 色遽光器層301G之方式形成紅色抗敍劑膜RR。換言之， 以較綠色據光ϋ層3〇1G之層厚更厚之方式形成紅色抗敍劑 膜RR。藉此，藉由紅色抗蝕劑臈RR將複數個綠色濾光器 層301G之間中之間距填埋，並且在該複數個綠色慮光器層 3 01G之上疊層紅色抗蝕劑膜rr。 接著如圖7(d)所示，藉由將紅色抗钮劑膜RR進行圖案加 工而形成紅色濾光器層3〇1R。 在此，係以與拜耳排列BH對應之方式將紅色抗蝕劑膜 RR進行圖案加卫。亦即，於基板1G1在與形成有像素P與 128882.doc • 26· 200915553 周邊電路之面對應之面中，以複數個紅色渡光器層3〇叫皮 此隔以才目等之間隔排列之方式將红色抗姓劑膜rr進行圖 案力 八體而5，係藉由微影技術針對紅色抗钱劑膜 RR依序實施曝光處理與顯影處王里@配i、红色遽光器層 301R。 在本實施形態中，係在像素區域PA與周邊區域SA之各 個中配置紅色濾光器層3〇1R。換言之，以在像素區域 與周邊區域SA之各個中配置相同之拜耳排列BH之方式， () 將紅色抗蝕劑膜尺尺進行圖案加工為紅色濾光器層301R。 此外，在此，係以綠色濾光器層3〇1G與紅色濾光器層 3 0 1R之層厚成為相同之方式將紅色抗蝕劑膜rr進行加 工〇 接著’如圖7(e)所示形成藍色抗触劑膜rb。 在此，係如上述所示將例如藉由旋塗法將包括藍色之著 色劑與光阻材料之塗佈液塗佈在形成有綠色濾光器層3〇 i G 及紅色濾光器層3 01R之面，而形成藍色抗蝕劑膜RB。例 ^ 如’包括藍色之顏料色素作為著色劑，且使用包括丙烯系 樹脂之塗佈液作為光阻材料而形成藍色抗蝕劑膜RB。 在本實施形態中’係與綠色抗蝕劑膜RG與紅色抗蝕劑 膜RR同樣，如圖7(e)所示，以被覆像素區域pA與周邊區域 S A之各個之方式形成藍色抗蝕劑膜rb。 具體而言，係將在像素區域PA與周邊區域SA之各個中 形成有綠色濾光器層301G及紅色濾光器層301R之面被 覆’並且以疊層於在該綠色濾光器層3 〇 1 g及紅色濾光器層 128882.doc -27- 200915553 1R之方式形成藍色抗蝕劑膜RB。換言之，以較綠色濾 光器層301G及紅色濾光器層3〇1R之層厚更厚之方式形成 ▲色抗蝕劑臈RB。藉此，藉由藍色抗蝕劑膜Rb將在複數 個綠色濾光器層301G之間之間距中未形成有紅色濾光器層 301R之間距填埋，並且使藍色抗蝕劑膜尺3疊層於該綠色 濾光器層3 01 G及紅色濾光器層3 〇〗R之上。 此外，再者，在周邊區域SA中，係以配置在此周邊區 域SA中之複數個拜耳排列BH將配置於最端部之拜耳排列 《，BH之側面被覆之方式形成藍色抗蝕劑膜rb。亦即，在本 實施形態中，係以將在周邊區域从中形成於終端部之綠色 渡光器層301G或紅色據光器層3〇1R之終端部側之側面被 覆之方式使藍色抗钮劑膜RB延伸。 接著’如® 7(f)所示藉由將藍色抗㈣m Rb進行圖案加 工而形成藍色遽光器層3〇ib。 在此’係以與拜耳排列BH對應之方式將藍色抗钮劑膜 RB進行圖案加工。 0 在本實施形態中，係如圖7⑴所示，針對像素區域PA在 形成於該像素區域PA之藍色抗触劑膜⑽中，以將疊層於 綠色濾4器層301G及紅色渡光器層3〇1R之藍色抗蚀劑膜 ⑽去除之方式實施圖案加工，藉此而形成藍色據光器層 3〇1B。具體而言，針對像素區域Μ，係與形成綠色渡光 器層3(HG及紅色據光器们㈣之情形同樣，藉由以微影 技術針對藍色抗餘劑咖依序實施曝光處理與顯影處 理，而以與拜耳排列卵對應之方式配置藍色渡光器層 128882.doc -28- 200915553 301B。亦即，於基板1〇1中在與形成有像素p與周邊電路之 面對應之面中，以複數個藍色遽光器層3㈣彼此隔以間隔 排列，且綠色濾光器層301G及紅色濾光器層3〇iR之層 厚、與藍色濾光器層301B之層厚成為彼此相同之方式將藍 色抗钱劑膜RB進行圖案加工。 另一方面，針對周邊區域SA’係在形成於該周邊區域 SA之藍色抗蝕劑膜RB中，以不將疊層於綠色濾光器層 3 01G及紅色濾光器層3〇1R之藍色抗蝕劑臈去除而維持 疊層狀態之方式殘留藍色抗蝕劑膜RB，藉此而形成此藍 色濾光器層301B。換言之，以較綠色濾光器層3〇ig及紅 色濾光器層301R之層厚更厚之方式形成藍色濾光器層 301B。 Π 此外，進一步，針對周邊區域SA，係以殘留以配置在 該周邊區域SA之複數個拜耳排列ΒΗ將配置於最端部之拜 耳排列Β Η之側面被覆之方式所形成之藍色抗钱劑膜r β之 方式實施圖案加工，藉此而形成藍色濾光器層3〇ib。 綜上所述，在本實施形態之固體攝像裝置丨中，彩色濾 光器301係以包括紅色濾光器層3〇1R與綠色濾光器層 與藍色濾光器層301B之拜耳排列BH在像素區域pA中與複 數個像素p對應之方式配置有複數個，並且在周邊區域sa 中與像素區域PA同樣配置有複數個。再者，在該周邊區域 SA中，再者，係將配置在該周邊區域SA之複數個拜耳排 列BH以藍色濾光器層3〇1B與基板1〇1之面對應之面被覆之 方式形成。如此，由於本實施形態係疊層紅色濾光器層 128882.doc -29· 200915553 301R或綠色濾光器層301G、與藍色濾光器層3〇1丑而可減 低光反射率，因此可抑制光斑之發生。此外，僅將紅色遽 光器層301R與藍色濾光器層30⑺之疊層形成在周邊區域 SA中之際，係如前所述會有在攝像圖像產生綠色之光斑， 而使圖像品質降低之情形，惟在本實施形態中，係除該紅 色/慮光器層3 01R與藍色濾光器層3 〇 1B之疊層以外，亦於 周邊區域SA形成有綠色濾光器層3〇1〇與藍色濾光器層 301B之疊層、及僅藍色濾光器層3〇1B之部分，因此即使 產生光斑亦幾乎為白色，因此可使圖像品質提昇。 換έ之’在周邊區域SA中，係由於在紅色濾光器層 301Rf層有藍色遽光器層3〇ιβ’再者，在綠色濾光器層 301G疊層有藍色濾光器層3〇1B，此外，以未疊層之部分 之藍色濾光器層30 1B成為較厚之膜厚之方式形成，因此可 減低光之穿透率，而防止位於其下層之由金屬材料等所組 成之布線層之光之反射。 此外，在本實施形態中，係以配置在周邊區域SA中之 複數個拜耳排列BH將配置於最端部之拜耳排列BH之側面 被覆之方式形成有藍色濾光器層30 1B ^因此，本實施形態 可抑制彩色濾光器301從面剝離。 再者’在本實施形態中，係於在像素區域p A與周邊區 域SA之各個形成複數個綠色濾光器層3〇1g之後，將在像 素區域PA與周邊區域SA之各個中形成有綠色濾光器層 301G之面被覆，且以疊層於該綠色濾光器層3〇1G之方式 塗佈紅色抗钮劑膜RR。藉由以如此隔以間隔之方式將形 128882.doc •30- 200915553 成於像素區域PA及周邊區域从之複數個綠色濾光器層 301G被覆之方式塗佈紅色抗蝕劑膜尺尺而形成，因此紅色 抗蝕劑膜RR之膜厚係以在像素區域PA與周邊區域sa之各 個中成為均一之方式形成。換言之，由於綠色濾光器層 3〇1G以跨越全面之方式形成，因此成為產生膜厚差之原因 之非週期性段差之影響會變小，故可以均一之臈厚形成紅 色抗蝕劑膜RR。再者，藉由針對以均一之膜厚形成之紅 色抗蝕劑膜RR實施圖案加工，在形成紅色濾光器層儿以 之後，以將在像素區域PA與周邊區域之各個中形成有 綠色濾光器層301G與紅色濾光器層3〇111之面被覆，且疊 層於在該綠色濾光器層301G與紅色濾光器層3〇1R之各個 之方式塗佈藍色抗蝕劑臈RB。在此亦與紅色抗蝕劑膜尺尺 之情形同樣，以隔以間隔之方式將形成於像素區域p A及周 邊區域SA之複數個綠色濾光器層3〇1(3被覆之方式塗佈藍 色抗蝕劑膜RB而形成，因此藍色抗蝕劑膜RB之膜厚係在 像素區域PA與周邊區域SA之各個中均一地形成。再者， 藉由針對以均一之膜厚形成之藍色抗蝕劑膜RB實施圖案 加工而形成藍色濾光器層3〇1Β。因此，本實施形態，構成 彩色濾光器301之彩色濾光器3〇丨係可容易將紅色濾光器層 30 1R與綠色濾光器層3〇1 G與藍色濾光器層301B之各個形 成為所希望之厚度。因此’在本實施形態中’係可防止在 像素區域PA發生紅色濾光器層3〇1R與綠色濾光器層3〇1G 與藍色遽光态層301B之各層厚之參差不齊，因此可防止在 攝像圖像中產生額緣狀之不均。 128882.doc 31 200915553 <實施形態2> (裝置構成） 圖8係為表示在本發明之實施形態2中固體攝像裝置工之 面圖。圖8係為圖2中之α·β部分之剖面之主要部分表 不從像素區域ΡΑ之端部跨越到周邊區域sa之部分。另 外，與圖4同樣，在像素區域pA中係如上述所示在基板1 〇丄 上配置有像素P，惟除光二極體21之外，針對構成該像素p 之各構件係省略圖示。此外，在周邊區域SA中雖如上述所 示配置有周邊電路，惟圖示予以省略。 此外，圖9係為在本發明之實施形態2中將彩色濾光器 301予以放大表示之俯視圖。在圖9中A_B部分係與圖2之 B部分對應，而將該A_B部分之周圍之平面予以放大表 不。此外，在此圖9中，（a)係從上面將彩色濾光器3〇1予以 放大表示，相對於此，（b)係將（a)中位於上層之下之下層 部分以點線加以表示。 如圖8及圖9所示，本實施形態之固體攝像裝置丨係包括 於拜耳排列BH配置有紅色濾光器層3〇1 R與綠色濾光器層 301G與藍色濾光器層301B之彩色濾光器301。然而，本實 施形態係如圖8及圖9所示’在周邊區域s A中，並非藍色淚 光裔層3016 ’而是紅色滤光器層301R以其拜耳排列bh為 下層之方式疊層。除此點以外，本實施形態均與實施形態 1同樣。因此，針對與實施形態1重複之部位係省略其記 載。 兹說明本實施形態之彩色渡光器3 01之詳細内容。 12S882.doc -32- 200915553 本實施形態之彩色濾光器301，在像素區域PA中係如圖 8及圖9所示，與實施形態丨同樣地以拜耳排列bh與複數個 像素P對應之方式配置。 再者’在周邊區域SA中亦如圖8及圖9所示，與像素區 域PA同樣地將紅色濾光器層3〇111與綠色濾光器層3〇1(}與 藍色濾光器層301B之各個配置於拜耳排列BH。The 々 color filter 301 includes a red filter layer 3〇1R, a green filter layer 301G, and a blue filter layer 3〇1B as shown in FIG. In the color filter 301, the red filter layer 3〇1R is formed as a high light transmittance in a wavelength band corresponding to red as shown in FIG. 6, and is provided by the subject image. The light penetrates as red light. In other words, the red filter layer 301R colors the light from the subject image into a red color, and splits the light from the subject image by the red light to penetrate the red filter layer 3 01R is, for example, a coating liquid containing a red colored pigment and a photoresist (photosensitive resin) as a binder resin, which is applied by a coating method such as a slave coating method to form a coating film, and then The shadow technique is formed by patterning the coating film. For example, the red phosphor layer 301R is formed to have a layer thickness of from 5 〇〇 nm to 1 〇〇〇 nm. Further, in the shirt color filter 3〇1, the green filter layer 3〇1G is formed as a high light transmittance in a wavelength band corresponding to green as shown in FIG. The light from the body image penetrates as green light. Here, the green filter layer 301CH is a wavelength band different from the wavelength band penetrated by the red filter 128882.doc -21 - 200915553 layer 301R, as shown in FIG. The band is formed in such a way as to have a higher light transmittance. Specifically, the + 5 'green filter layer 301G is in the wavelength band through which the light penetrates, and the wavelength of the light penetrating the ridge of the ridge is different from that of the red filter layer 301R, and the green light penetrates the square 1 . The green filter layer 301G is colored, for example, in a coating liquid including a green color pigment and a photoresist material by splitting light from the image of the subject, by spin coating. The coating method such as the method is applied by coating to form a coating film, and then forming the coating film by the lithography technique. For example, the green filter layer 301G is formed to have a layer thickness of from 6 nm to 9 Å. Further, 'the blue filter layer 301B in the color filter 301 is formed as shown in FIG. 6 to have a higher light transmittance in the wavelength band corresponding to blue, and is provided for the subject image. The light comes through as blue light. Here, the 'blue filter layer 3 01B is a wavelength band different from the wavelength band penetrated by the red chopper reed 301R and the green chopper layer 3 〇ig as shown in FIG. It is formed in such a manner that a higher light transmittance is obtained in the corresponding wavelength band. Specifically, the blue filter layer 3〇1B is in the wavelength band through which light is transmitted, and the wavelength at which the light transmittance is the highest is different from the red filter layer 3〇1R and the green filter layer 301G. The method of blue light penetration is to color the light into blue by splitting the light from the image of the subject. The blue filter layer 301 B is formed by, for example, coating a coating liquid containing a blue color pigment and a photoresist material by a coating method such as a spin coating method to form a coating film. The technique is formed by patterning the coating film. For example, the blue filter layer 301B is formed in the form of a layer thickness of 3 〇〇 nm to 1 〇〇〇 nm, 128882.doc -22- 200915553. Each of the red dimmer layer 301R and the green filter layer 301G and the blue filter layer 301B described above is arranged side by side on the surface corresponding to the surface of the substrate 1 〇 1 as shown in FIG. 5( a ) and Bayer arranges BH. That is, in the Bayer arrangement BH, a rectangular red filter layer 301R, a rectangular blue filter layer 3〇1B, and two rectangular green filter layers 301G are used. One set, and the two green filter layers 3〇1 (} are arranged in a grid pattern at intervals, and are arranged side by side in such a manner that the green filter layer O 301G is lattice-like. Each of the red filter layer 301R and the one blue filter layer 3〇1B is disposed, and further, the red filter layer 3〇1 and the green filter layer 3〇1G are disposed. The Bayer arrangement BH of each of the blue filter layers 301B is plural in a manner to repeat in the horizontal direction 11 and the vertical direction V. Specifically, in the pixel area PA, as shown in FIG. 5(a) The Bayer arrangement BH is arranged corresponding to the plurality of pixels p. In other words, as shown in FIG. 4, the red filter layer 301R and the green filter layer 301G and the blue filter layer 3 constituting the Bayer arrangement BH are arranged. Each of 1B2 is disposed so as to face each of the light receiving surfaces of the photodiodes 21 constituting the pixel p. Further, in the pixel region In the PA, the red filter layer 3〇1R and the green filter layer 301G and the blue filter layer 3〇16 are formed to have the same layer thickness. Further, in the peripheral area SA As shown in FIG. 5(b), similarly to the pixel region pA, each of the red filter layer 301R and the green filter layer 3〇1G and the blue filter layer 301B is disposed in the Bayer array BH. The Bayer arrangement bh arranged in the prime area PA like 128882.doc •23·200915553 is arranged in plural in the peripheral area SA. In the present embodiment, it is at the end of the substrate 101. The Bayer arrangement BH is provided in such a manner as to repeat to the front surface of the portion where the pad electrode EP is formed. Further, in this peripheral area SA, as shown in FIG. 5(a), the plural number is disposed in the peripheral area SA. The Bayer arrangement bh is formed by covering the surface of the blue filter layer 301B corresponding to the surface of the substrate 101. In other words, as shown in FIG. 4, in the peripheral area SA, the blue filter layer 3〇1B is compared. The layer thickness of the green filter layer 301G and the red filter layer 301R is thicker to form 'as shown in Fig. 5 As shown in FIG. 5(b), in the lower layer, the red filter layer 301R, the green filter layer 301G, and the blue filter layer 3〇1B are arranged so as to be the Bayer arrangement BH, and the blue filter is laminated. Further, in the peripheral region SA, as shown in FIG. 4, a plurality of Bayer arrangements BH arranged in the peripheral region SA are disposed on the side of the Bayer arrangement BH at the extreme end. A blue filter layer 301B is formed in a coating manner (manufacturing method) The following method for manufacturing the color filter 301 described above is formed on a substrate. Fig. 7 is a cross-sectional view showing the main part of the method of forming a color directional light illuminator in the first embodiment of the present invention. Further, in the portion (M) of Fig. 7, the portion C-D as shown in Fig. 5(b) is shown as a plane in a section cut into a stepped shape. 128882.doc -24· 200915553 First, as shown in Fig. 7(a), tf, a green anti-surname agent (old) film rg was formed. Here, as described above, after the semiconductor elements constituting the pixel p and the peripheral circuit are formed on the substrate 1〇1, the wiring layer hf, the light shielding layer LS, and the interlayer insulating film SF' are formed and the surface thereof is flattened. Chemical. Thereafter, a coating liquid containing a green coloring agent and a photoresist material is applied to the surface of the flattened surface by, for example, a spin coating method to form a green anti-drug film. For example, a green pigment pigment is used as a colorant, and a coating liquid containing a propylene '(10) coffee) resin is used as a photoresist material to form a green anti-smear film RG. X may also contain a polymerization initiator or a hardener. In the present embodiment, the green state resist film RG is formed so as to cover the respective pixel regions PA and the peripheral regions S. Next, as shown in Fig. 7 (b), the green filter layer 301G is formed by patterning the green anti-contact agent film milk. Here, the green resist 臈RG is patterned in a manner corresponding to the Bayer arrangement BH. In other words, in the substrate 1〇1, a plurality of green filter layers and 3 〇1G are arranged in a lattice shape on the surface corresponding to the surface on which the pixel P and the peripheral circuit are formed, and are arranged at intervals. The green resist film RG is patterned. Specifically, the green resist film RG is sequentially subjected to exposure processing and development processing by photolithography, and the side of the rectangular green filter layer 301G and the green filter layer thereof are formed. The green filter layer 301G is formed in such a manner that the distance between the sides of the other rectangular green filter layers 3〇1G adjacent to the 301G is equal. In the present embodiment, the green irrigator layer 301G is arranged in a lattice shape in each of the pixel regions PA and the peripheral regions s a 128882.doc • 25· 200915553. In other words, the green resist film RG is patterned as described above by arranging the same Bayer (tetra) βΗ from each of the pixel regions PA and the peripheral region, and then forming as shown in FIG. 7(c). Red resist film RR. Here, as described above, a coating liquid including a red coloring agent and a photoresist material is applied to a surface on which green choppers are formed, for example, by spin coating, to form a red resist film. . For example, a red pigment pigment is used as a colorant, and a coating liquid of a (four) rare resin is used as a photoresist material to form a red resist film RR. In the present embodiment, similarly to the green resist film RG, the red anti-seepage agent film RR is formed so as to cover each of the pixel region PA and the peripheral region SA. Specifically, 'the surface of the pixel region PA and the peripheral region from which the green photoreceptor layer 301G is formed is covered, and a red anti-small film is formed on the green chopper layer 301G. RR. In other words, the red anti-suppressant film RR is formed in a manner that the layer thickness of the green light-emitting layer 3〇1G is thicker. Thereby, a space between the plurality of green filter layers 301G is filled by the red resist 臈RR, and a red resist film rr is laminated on the plurality of green photoreceptor layers 101G. . Next, as shown in Fig. 7(d), the red filter layer 3〇1R is formed by patterning the red resist film RR. Here, the red resist film RR is patterned in a manner corresponding to the Bayer arrangement BH. That is, in the surface of the substrate 1G1 corresponding to the surface on which the peripheral circuits of the pixels P and 128882.doc • 26·200915553 are formed, the plurality of red dynode layers 3 are arranged at intervals of the same order. In the manner of red anti-surname film rr, the pattern is eight-body and 5, and the red anti-money film RR is sequentially subjected to exposure processing and development by lithography technology. Wang Li @配i, red chopper layer 301R . In the present embodiment, the red filter layer 3〇1R is disposed in each of the pixel area PA and the peripheral area SA. In other words, the red resist film scale is patterned into the red filter layer 301R so that the same Bayer arrangement BH is disposed in each of the pixel region and the peripheral region SA. Further, here, the red resist film rr is processed in such a manner that the layer thicknesses of the green filter layer 3〇1G and the red filter layer 3 0 1R are the same, and then 'as shown in FIG. 7(e) It is shown that a blue anti-contact agent film rb is formed. Here, as described above, a coating liquid including a blue coloring agent and a photoresist material is applied to a green filter layer 3〇i G and a red filter layer, for example, by spin coating. 3 01R is formed to form a blue resist film RB. For example, 'a blue pigment pigment is included as a colorant, and a coating liquid containing a propylene resin is used as a photoresist material to form a blue resist film RB. In the present embodiment, similarly to the green resist film RG and the red resist film RR, as shown in FIG. 7(e), a blue resist is formed so as to cover each of the pixel region pA and the peripheral region SA. Film rb. Specifically, a surface in which the green filter layer 301G and the red filter layer 301R are formed in each of the pixel area PA and the peripheral area SA is covered and laminated on the green filter layer 3 A blue resist film RB is formed in a manner of 1 g and a red filter layer 128882.doc -27- 200915553 1R. In other words, the ▲ color resist 臈RB is formed so that the layer thickness of the green filter layer 301G and the red filter layer 3〇1R is thicker. Thereby, a red filter film 301R is not formed between the plurality of green filter layers 301G by the blue resist film Rb, and a blue resist film is formed. 3 is laminated on the green filter layer 3 01 G and the red filter layer 3 〇 R. Further, in the peripheral area SA, the Bayer arrangement BH disposed at the most end portion is formed by a plurality of Bayer arrangements BH arranged in the peripheral area SA, and a blue resist film is formed so as to cover the side surface of the BH. Rb. In other words, in the present embodiment, the blue button is formed so as to be covered with the side surface of the green light concentrator layer 301G or the red lighter layer 3〇1R formed in the peripheral portion from the peripheral portion. The film RB extends. Next, as shown in Fig. 7(f), a blue chopper layer 3〇ib is formed by patterning the blue anti-(tetra)m Rb. Here, the blue resist film RB is patterned in a manner corresponding to the Bayer arrangement BH. In the present embodiment, as shown in Fig. 7 (1), the pixel region PA is formed in the blue anti-contact agent film (10) of the pixel region PA so as to be laminated on the green filter layer 301G and the red light beam. Pattern processing is performed in such a manner that the blue resist film (10) of the layer 3〇1R is removed, thereby forming a blue photoreceptor layer 3〇1B. Specifically, for the pixel region Μ, similarly to the case where the green illuminator layer 3 (HG and the red illuminator (4)) is formed, the exposure processing is performed on the blue anti-surplus agent in the lithography technique. The development process is performed, and the blue irradiator layer 128882.doc -28-200915553 301B is disposed corresponding to the Bayer array eggs. That is, the substrate 1 〇1 corresponds to the surface on which the pixel p and the peripheral circuit are formed. In the plane, a plurality of blue chopper layers 3 (four) are arranged at intervals, and a layer thickness of the green filter layer 301G and the red filter layer 3〇iR and a layer thickness of the blue filter layer 301B are thick. The blue anti-money film RB is patterned in the same manner as the other. On the other hand, the peripheral region SA' is formed in the blue resist film RB formed in the peripheral region SA so as not to be laminated. The blue resist film RB is left in such a manner that the blue resist 臈 of the green filter layer 3 01G and the red filter layer 3 〇 1R is removed to maintain the laminated state, thereby forming the blue filter. Layer 301B. In other words, the layer thickness of the greener filter layer 3〇ig and the red filter layer 301R Further, the blue filter layer 301B is formed in a thicker manner. Further, in addition, the peripheral area SA is arranged in a Bayer arrangement in which a plurality of Bayer arrays are disposed in the peripheral area SA, and arranged at the end. The blue filter layer 3 〇 ib is formed by patterning the blue anti-money film r β formed by the side coating, thereby forming the solid-state imaging device of the present embodiment. The color filter 301 is configured such that the red filter layer 3〇1R and the Bayer arrangement BH of the green filter layer and the blue filter layer 301B are arranged in the pixel region pA corresponding to the plurality of pixels p. There are a plurality of the same, and a plurality of the pixel areas PA are arranged in the peripheral area sa. Further, in the peripheral area SA, the plurality of Bayer arrays BH arranged in the peripheral area SA are blue. The filter layer 3〇1B is formed to cover the surface corresponding to the surface of the substrate 1〇1. Thus, in the present embodiment, the red filter layer 128882.doc -29·200915553 301R or the green filter layer is laminated. 301G, with blue filter layer 3〇1 Further, since the light reflectance can be reduced, the occurrence of the light spot can be suppressed. Further, when only the lamination of the red chopper layer 301R and the blue filter layer 30 (7) is formed in the peripheral area SA, it is as described above. There is a case where a green light spot is generated in the captured image, and the image quality is lowered. However, in the present embodiment, the red/photometer layer 301R and the blue filter layer 3 〇1B are stacked. In addition, in the peripheral region SA, a layer of the green filter layer 3〇1〇 and the blue filter layer 301B and a portion of only the blue filter layer 3〇1B are formed, so that even if a spot is generated, It is white, so the image quality can be improved. In the peripheral area SA, since there is a blue chopper layer 3〇ιβ' in the red filter layer 301Rf layer, a blue filter layer is laminated on the green filter layer 301G. 3〇1B, in addition, the blue filter layer 30 1B which is not laminated is formed to have a thick film thickness, so that the light transmittance can be reduced, and the metal material or the like located in the lower layer can be prevented. The reflection of light from the composed wiring layer. Further, in the present embodiment, the blue filter layer 30 1B is formed so that the plurality of Bayer arrays BH arranged in the peripheral area SA cover the side surface of the Bayer arrangement BH disposed at the most end portion. In the present embodiment, the color filter 301 can be prevented from being peeled off from the surface. Furthermore, in the present embodiment, after a plurality of green filter layers 3〇1g are formed in each of the pixel region p A and the peripheral region SA, green is formed in each of the pixel region PA and the peripheral region SA. The surface of the filter layer 301G is covered, and the red resist film RR is applied so as to be laminated on the green filter layer 3〇1G. The red resist film ruler is formed by coating the shape 128882.doc • 30-200915553 in the pixel area PA and the peripheral region from the plurality of green filter layers 301G in such a manner as to be spaced apart Therefore, the film thickness of the red resist film RR is formed to be uniform in each of the pixel region PA and the peripheral region sa. In other words, since the green filter layer 3〇1G is formed over the entire surface, the influence of the non-periodic step difference which causes the film thickness difference is small, so that the red resist film RR can be formed uniformly and thickly. . Furthermore, by performing pattern processing on the red resist film RR formed with a uniform film thickness, after the red filter layer is formed, green filters are formed in each of the pixel region PA and the peripheral region. The photoreceptor layer 301G is coated on the surface of the red filter layer 3〇111, and is laminated on the respective layers of the green filter layer 301G and the red filter layer 3〇1R. RB. Here, as in the case of the red resist film ruler, a plurality of green filter layers 3〇1 (3 coated) formed in the pixel region p A and the peripheral region SA are applied at intervals. Since the blue resist film RB is formed, the film thickness of the blue resist film RB is uniformly formed in each of the pixel region PA and the peripheral region SA. Further, by forming a uniform film thickness The blue resist film RB is patterned to form a blue filter layer 3〇1Β. Therefore, in the present embodiment, the color filter 3 constituting the color filter 301 can easily use the red filter. Each of the layer 30 1R and the green filter layer 3〇1 G and the blue filter layer 301B is formed to have a desired thickness. Therefore, 'in the present embodiment' prevents the occurrence of a red filter in the pixel area PA. The thickness of each layer of the layer 3〇1R and the green filter layer 3〇1G and the blue pupil layer 301B is uneven, so that unevenness of the marginal shape can be prevented from occurring in the captured image. 128882.doc 31 200915553 <Embodiment 2> (Device Configuration) FIG. 8 is a view showing Embodiment 2 of the present invention. Fig. 8 is a portion in which the main portion of the cross section of the α·β portion in Fig. 2 is not crossed from the end portion of the pixel region 到 to the peripheral region sa. Further, similarly to Fig. 4, In the pixel region pA, the pixel P is disposed on the substrate 1A as described above, except for the photodiode 21, and the components constituting the pixel p are not shown. Further, in the peripheral region SA The peripheral circuit is disposed as described above, and the illustration is omitted. Fig. 9 is a plan view showing the color filter 301 in an enlarged manner in the second embodiment of the present invention. Part B of Fig. 2 corresponds to the plane around the A_B portion, and in addition, in Fig. 9, (a) shows the color filter 3〇1 enlarged from above, and (b) The portion below the upper layer in (a) is indicated by a dotted line. As shown in FIGS. 8 and 9, the solid-state imaging device according to the present embodiment includes a red filter arranged in the Bayer array BH. Layer 3〇1 R and green filter layer 301G and blue filter The color filter 301 of the layer 301B. However, this embodiment is as shown in Figs. 8 and 9 'in the peripheral region s A, not the blue tear layer 3016' but the red filter layer 301R The present embodiment is the same as that of the first embodiment except for the fact that the Bayer arrangement bh is the lower layer. Therefore, the description of the portion overlapping with the first embodiment will be omitted. The color illuminator of this embodiment will be described. Details of 3 01. 12S882.doc -32- 200915553 The color filter 301 of the present embodiment is shown in FIGS. 8 and 9 in the pixel area PA, and is arranged in a Bayer arrangement bh and plural in the same manner as the embodiment. The pixels P are arranged in a corresponding manner. Further, as shown in FIGS. 8 and 9 in the peripheral region SA, the red filter layer 3〇111 and the green filter layer 3〇1 (} and the blue filter are similar to the pixel region PA. Each of the layers 301B is disposed in the Bayer arrangement BH.

再者，在此周邊區域SA中，如圖9(a)所示，係將配置於 周邊區域S A之複數個拜耳排列b Η，以紅色濾、光器層3 〇 1 r 與基板101之面對應之面被覆之方式形成。 換言之，如圖8所示，在周邊區域SA中係以紅色濾光器 層301R較綠色濾光器層301(}及藍色濾光器層3〇ΐβ之層厚 更厚之方式形成，且如圖9(a)與圖9(b)所示，在下層中， 係以成為拜耳排列BH之方式’配置有紅色濾光器層 301R、綠色濾光器層301G、藍色濾光器層3〇1B，且疊層 有紅色濾光器層301R作為其上層。 (製造方法） 以下兹說明將上述之彩色濾光器3〇1形成於基板⑻之製 造方法。 圚糸录示本發 •-1·少双形巴源无 3 01之方法之各步驟中加以製造 也〈王要部分的剖面圖。 又’在圖10中C-D部分係與圖9(b)之r Him v ，、口之C-D部分對應，且將此 階梯狀之C-D部分之面表示作為一個平面。 首先，如圖1〇⑷所示，在形成綠色抗钱劑膜虹之後’ 如圖糊所示，藉由將綠色抗餘劑膜如進行圖案加工而 128882.doc -33- 200915553 形成綠色濾光器層301G。 在此，係與實施形態丨同樣地，在形成綠色抗蝕劑膜11(} 之後形成綠色濾光器層3 01G。 接著如圖10(c)所示形成藍色抗蝕劑臈。 在此，係與實施形態1同樣地，例如藉由旋塗法，將包 含藍色之著色劑與光阻材料之塗佈液，塗佈在形成有綠色 濾光器層301G之面上而形成藍色抗钱劑膜RB。即，與綠 色抗蝕劑膜RG相同地，以被覆各個像素區域pA與周邊區 (' 域8八之方式而形成藍色抗#劑膜RB。 接著，如圖10(d)所不，藉由對藍色抗蝕劑膜^^進行圖 案加工而形成藍色濾光器層301B。 在此，係與實施形態丨同樣，以與拜耳排列對應之方 式，將藍色抗蝕劑膜RB進行圖案加工而形成藍色濾光器 層301B。即，以在各個像素區域pA與周邊區域sa中配置 相同之拜耳排列之方式，對藍色抗蝕劑膜rB進行圖案 加工為藍色濾光器層301B。 ij 接著，如圖10(e)所示形成紅色抗蝕劑膜RR。 在此，係與實施形態1同樣，例如藉由旋塗法，將包含 紅色之著色劑與光阻材料之塗佈液，塗佈在形成有綠色濾 光益層301G及藍色濾光器層3〇1B之面上而形成紅色抗蝕 劑膜RR。即，與綠色抗蝕劑膜尺^及藍色抗蝕劑膜RB同樣 地，如圖10(e)所示，以被覆各個像素區域PA與周邊區域 SA之方式而形成紅色抗蝕劑膜RR。 接著’如圖10(f)所示，藉由將紅色抗蝕劑膜rR進行圖 128882.doc •34- 200915553 案加工而形成紅色濾光器層301R。 在此，以與拜耳排列BH對應之方式將藍色抗蝕劑膜RB 進行圖案加工。 在本實施形悲中，係與實施形態i同樣，如圖丨〇⑴所 示針對像素區域p A，係以將在形成於該像素區域p a之 紅色抗蝕劑膜RR中，疊層於綠色濾光器層3〇1G及藍色遽 光器層301B之紅色抗蝕劑膜RR去除之方式實施圖案加工 而形成紅色濾光器層301R。 Ο 方面，在周邊區域SA中，係以在形成於該周邊區 域SA之紅色抗蝕劑膜RR中，不將疊層於綠色濾光器層 301G及藍色濾光器層30丨B之紅色抗蝕劑膜rr去除而維持 疊層狀態之方式，將紅色抗蝕劑膜RR殘留，藉此而形成 此紅色遽光器層3〇1R。換言之，以較綠色據光器層3〇ig 及藍色渡光器層3〇1B之層厚更厚之方式形成紅色渡光器層 301R。 综上所述，在本實施形態中，彩色濾光器301在周邊區 ’ 域SA中，並非藍色濾光器層301B，而是紅色濾光器層 301R以拜耳排列BH為下層之方式疊層。因此，在實施形 態1中，由於在周邊區域SA中藍色濾光器層3〇1b之部分^ 與其他原色之濾光器層疊層，因此會有從該部分入射i光 著色成藍色之光而出射至周邊電路之情形，相對於此，在 本實施形態中，由於紅色滤光器層3〇1R之部分並未與其他 原色之濾光器層疊層，因此從該部分入射之光會著色成紅 色之光而出射至周邊電路。在藍色之光與紅色之光中，係 128882.doc •35- 200915553 以紅色之光之波長較藍色之光長，而為較低之能量。因 此，如上述所示，即使是無法將入射至周邊電路之光予以 遮光而使光出射至周邊電路之情形下，由於為較低之能 量，因此可抑制縱紋狀之雜訊等之缺失线像圖像產生。 <實施形態3> (裝置構成） 圖11係表示在本發明之實施形態3中，固體攝像裝置丨之 剖面圖。圖11係圖2令之A-B部分之剖面之主要部分，表示 從像素區域PA之端部跨越到周邊區域8八之部分。又，與 圖4相同地，在像素區域PA中，係如上述所示，在基板ι〇ι 上係配置有像素p，惟除光二極體2丨以外，針對構成該像 素P之各構件係省略圖示。再者，在周邊區域SA中，係如 上述所示地配置有周邊電路，惟省略圖示。 又，圖12係將本發明之實施形態3中，彩色濾光器3〇丨予 以放大表示之俯視圖。在圖12中，A_B部分係與圖2之A_B 部分對應，且將其A-B部分之周圍之平面予以放大表示。 再者，在此圖12中，（a)係從上面將彩色濾光器3〇1予以放 大表示’相對於此，（b)係將⑷中位於上層下方之下層部 分以虛線加以表示。 如圖11及圖12所示，在本實施形態之固體攝像裝置1 中’係包含藉由拜耳排列BH，而配置有紅色濾光器層 3〇1R、綠色濾光器層301G、與藍色濾光器層301B之彩色 滤'光器301。然而，本實施形態係如圖】〖及圖12所示，在 周邊區域SA中，黑色層301K係以拜耳排列bh與藍色濾光 128882.doc -36· 200915553 器層30 1B為下層之方式，而加以疊層。除此點以外，本實 施形態均與實施形態1同樣。因此，針對與實施形態丨重複 之處係省略其記载。 黑色層301K係如圖11及圖12所示，以在周邊區域8八中 被覆拜耳排列BH及藍色濾光器層3〇1B之方式，而加以疊 層。在此，黑色層301K係以穿透由被攝體像而來之光之光 穿透率，較紅色濾光器層301R與綠色濾光器層3〇1〇與藍 色濾光器層301B之各者更低之方式而形成。在此黑色層 3 01K係用以將光予以遮光。 此黑色層301K係例如藉由旋塗法等之塗覆方法塗佈包括 黑色之著色顏料與光阻材料之塗佈液而將黑色抗蝕劑膜形 成於全面後，藉由微影技術將該黑色抗蝕劑臈進行圖案加 工而形成。具體而言，係以從100 nm成為8〇〇 nm2層厚之 方式形成。 綜上所述，在本實施形態中，黑色層3〇1K係以拜耳排列 ΒΗ與藍色濾光器層301Bg下層之方式疊層於周邊區域 SA。因此，可有效地將入射至周邊電路之光予以遮光，故 可抑制縱紋狀之雜訊等之缺失在攝像圖像產生。 另外，在上述之實施形態中，固體攝像裝置2係為本發 明之固體攝像裝置之一例。此外，在上述之實施形態中， 相機40係為本發明之相機之一例。此外，在上述之實施形 悲中’基板1 0 1係為本發明之基板之一例。此外，在上述 之實施形態中’像素區域PA係為本發明之像素區域之一 例。此外，在上述之實施形態中，周邊區域SA係為本發明 128882.doc -37- 200915553 之周邊區域之一例。此外，在上述之實施形態巾，光二極 體21係為本發明之光電轉換元件之一例。此外，在上述之 實c*开/ 中，彩色濾光益3 〇丨係為本發明之彩色濾光器之 例此外，在上述之實施形態中，紅色濾光器層3 〇丨R係 為本毛明之第1色層、第2色層、第3色層之一例。具體而 °在實施形態1或3中，係相當於本發明之第1色層或第3 色層。相對於此，在實施形態2中，係相當於本發明之第2 色層。此外，在上述之實施形態中，綠色濾光器層3〇1G係 為本發明之第1色層或第3色層之一例。此外，在上述之實 施形態中’藍色濾光器層3〇1B係為本發明之第1色層、第2 色層、第3色層之一例。具體而言，在實施形態1或3中， 係相當於本發明之第2色層。相對於此，在實施形態2中， 係相當於本發明之第丨色層或第3色層。此外，在上述之實 施形態中’黑色層3〇1K係為本發明之第4色層之一例。此 外’在上述之實施形態中，拜耳排列ΒΗ係為本發明之色 彩排列之一例。 此外’在本發明之實施之際，並不限定於上述之實施形 態’而可採用各種變形例。 例如’在上述之實施形態中，雖說明了將紅色濾光器層 301R與綠色濾光器層301〇與藍色濾光器層301Β配置於拜 耳排列ΒΗ之情形，惟不限定於此。 圖1 3係為表示在本發明之實施形態中，關於彩色濾光器 3〇1之色彩排列之變形形態之圖。 如圖13(a)所示，亦可適用在將配置2個於拜耳排列ΒΗ之 128882.doc -38- 200915553 綠色濾光器層301G之一方設為不使入射光著色而穿透之穿 透窗301T之情形。 此外，如圖13(b)所示，在拜耳排列BH中，亦可適用在 不將矩形形狀之紅色濾光器層3〇111與綠色濾光器層3〇ig 與藍色據光器層301B之各個分別配置於垂直方向v與水平 方向Η ’而以相對於垂直方向v與水平方向η傾斜45度之方 式配置之情形。亦即’亦適用在矩形形狀之綠色濾光器層 3 0 1G之對角線以沿著垂直方向ν之方式配置2個且矩形 形狀之紅色濾光器層30丨尺與藍色濾光器層301Β之對角線 以沿著水平方向H之方式，於配置在矩形形狀内之色彩排 列形成彩色濾光器301之情形。 再者’如圖13(c)所示，亦可適用在將彩色濾光器3〇1形 成於以青色（cyaan)濾光器層301(：與深紅色（magenta)滤光 器層301M與黃色濾光器層301Y、及綠色濾光器層3〇1(3為1 組之色彩排列之情形。 此外’在本實施形態中，雖說明了適用在CMOS影像感 測器之情形，惟不限定於此。例如，亦可適用在CCD (Charge Coupled Device’電耦合元件）影像感測器。 此外’在本實施形態中，雖說明了使用顏料作為著色劑 之情形，惟不限定於此。例如’亦可適用在使用染料作為 著色劑之情形。 【圖式簡單說明】 圖1係為表示在本發明之實施形態1中相機4〇之構成之構 成圖。 128882.doc -39· 200915553 圖2係為表示在本發明之實施形態丨中固體攝像裝置1之 整體構成概略之俯視圖。 圖3係為表示在本發明之實施形態1中在像素區域P A中 所設之像素P之電路圖。 圖4係為表示在本發明之實施形態1中固體攝像裝置i之 剖面圖。 圖5(a) (b)係為在本發明之實施形態1中將彩色濾光器 301予以放大表示之俯視圖。Further, in the peripheral region SA, as shown in FIG. 9(a), a plurality of Bayer arrays b 配置 arranged in the peripheral region SA are arranged in a red filter, a photoreceptor layer 3 〇 1 r and a surface of the substrate 101. The corresponding surface is formed by covering. In other words, as shown in FIG. 8, in the peripheral region SA, the red filter layer 301R is formed thicker than the green filter layer 301 (} and the blue filter layer 3 〇ΐβ, and As shown in FIG. 9(a) and FIG. 9(b), in the lower layer, the red filter layer 301R, the green filter layer 301G, and the blue filter layer are disposed in such a manner as to form the Bayer arrangement BH. 3〇1B, and the red filter layer 301R is laminated as the upper layer. (Manufacturing Method) Hereinafter, a method of manufacturing the above-described color filter 3〇1 on the substrate (8) will be described. -1·There is also a cross-sectional view of the part of the method of the method of the small double-shaped Bayuan without the 3 01 method. Also, the CD part in Fig. 10 and the r Him v of Fig. 9(b), The CD portion corresponds to, and the face of the stepped CD portion is represented as a plane. First, as shown in Fig. 1 (4), after forming a green anti-money agent film rainbow, as shown in the paste, by using green The anti-surplus film is formed into a green filter layer 301G by pattern processing, 128882.doc -33 - 200915553. Here, in the same manner as the embodiment 丨The green filter layer 301G is formed after the formation of the green resist film 11 (}. Next, a blue resist 臈 is formed as shown in Fig. 10(c). Here, as in the first embodiment, for example, A coating liquid containing a blue coloring agent and a photoresist material is applied onto the surface on which the green filter layer 301G is formed by a spin coating method to form a blue anti-money agent film RB. Similarly, the resist film RG forms a blue anti-drug film RB in such a manner as to cover each of the pixel regions pA and the peripheral region ('domain 8). Next, as shown in FIG. 10(d), The etching film is patterned to form the blue filter layer 301B. Here, similarly to the embodiment, the blue resist film RB is patterned to form blue in accordance with the Bayer arrangement. The color filter layer 301B, that is, the blue resist film rB is patterned into the blue filter layer 301B so that the same Bayer arrangement is arranged in each of the pixel regions pA and the peripheral region sa. A red resist film RR is formed as shown in Fig. 10(e). Here, as in the first embodiment, for example, by spin In the method, a coating liquid containing a red coloring agent and a photoresist is applied onto the surface on which the green filter layer 301G and the blue filter layer 3〇1B are formed to form a red resist film RR. In other words, similarly to the green resist film and the blue resist film RB, as shown in FIG. 10(e), the red resist film RR is formed so as to cover the respective pixel regions PA and the peripheral regions SA. Next, as shown in Fig. 10(f), a red filter layer 301R is formed by processing the red resist film rR in the manner of Fig. 128882.doc • 34-200915553. Here, the blue resist film RB is patterned in a manner corresponding to the Bayer arrangement BH. In the present embodiment, as in the embodiment i, as shown in FIG. 1(1), the pixel region p A is laminated on the red resist film RR formed in the pixel region pa. The red filter film 301R is formed by performing pattern processing so that the red resist film RR of the filter layer 3〇1G and the blue phosphor layer 301B is removed. In the peripheral region SA, in the red resist film RR formed in the peripheral region SA, the red layer laminated on the green filter layer 301G and the blue filter layer 30B is not red. The red resist film RR is formed by removing the resist film rr and maintaining the laminated state, thereby forming the red chopper layer 3〇1R. In other words, the red irrigator layer 301R is formed in such a manner that the layer thickness of the greener photodetector layer 3 〇ig and the blue dynode layer 3 〇 1B is thicker. In summary, in the present embodiment, the color filter 301 is not in the peripheral region 'domain SA, but not in the blue filter layer 301B, but the red filter layer 301R is stacked in the manner that the Bayer arrangement BH is the lower layer. Floor. Therefore, in the first embodiment, since the portion of the blue filter layer 3〇1b in the peripheral region SA is laminated with the filters of the other primary colors, the incident light i is colored blue from the portion. In the case where the light is emitted to the peripheral circuit, in the present embodiment, since the portion of the red filter layer 3〇1R is not laminated with the filters of the other primary colors, the light incident from the portion is It is colored in red and emitted to the peripheral circuit. In the blue and red light, 128882.doc •35- 200915553 The wavelength of red light is longer than the blue light, but lower energy. Therefore, as described above, even in the case where light incident on the peripheral circuit cannot be shielded and light is emitted to the peripheral circuit, since the energy is low, the missing line of the longitudinal noise or the like can be suppressed. Like an image produced. <Embodiment 3> (Device configuration) Fig. 11 is a cross-sectional view showing a solid-state imaging device 丨 in the third embodiment of the present invention. Fig. 11 is a main portion of a cross section taken along line A-B of Fig. 2, showing a portion spanning from the end of the pixel area PA to the peripheral area 8. Further, similarly to FIG. 4, in the pixel area PA, as described above, the pixel p is disposed on the substrate ιι, except for the photodiode 2, and the respective components constituting the pixel P are formed. The illustration is omitted. Further, in the peripheral area SA, peripheral circuits are arranged as described above, but illustration thereof is omitted. Further, Fig. 12 is a plan view showing the color filter 3 in an enlarged manner in the third embodiment of the present invention. In Fig. 12, the A_B portion corresponds to the A_B portion of Fig. 2, and the plane around the A-B portion thereof is enlarged. Further, in Fig. 12, (a) indicates that the color filter 3〇1 is enlarged from above, and (b) indicates that the lower portion of the layer below the upper layer in (4) is indicated by a broken line. As shown in FIG. 11 and FIG. 12, in the solid-state imaging device 1 of the present embodiment, the red filter layer 3〇1R, the green filter layer 301G, and the blue are disposed by the Bayer arrangement BH. The color filter 'optical 301 of the filter layer 301B. However, in the present embodiment, as shown in FIG. 12 and FIG. 12, in the peripheral area SA, the black layer 301K is in the manner of the Bayer arrangement bh and the blue filter 128882.doc -36·200915553 layer 30 1B as the lower layer. And laminated. Except for this point, this embodiment is the same as that of the first embodiment. Therefore, the description of the embodiment will be omitted. As shown in Figs. 11 and 12, the black layer 301K is laminated so as to cover the Bayer array BH and the blue filter layer 3〇1B in the peripheral region 8-8. Here, the black layer 301K is a light transmittance that penetrates light from the subject image, the red filter layer 301R and the green filter layer 3〇1〇 and the blue filter layer 301B. Each of them is formed in a lower way. In this black layer 3 01K is used to shield light from light. The black layer 301K is formed by coating a black resist film with a coating liquid including a black coloring pigment and a photoresist material by a coating method such as a spin coating method, etc., by using a lithography technique. The black resist is formed by pattern processing. Specifically, it is formed in a manner from 100 nm to 8 Å 2 layer thickness. As described above, in the present embodiment, the black layer 3〇1K is laminated on the peripheral region SA so as to be in the lower layer of the Bayer array and the blue filter layer 301Bg. Therefore, the light incident on the peripheral circuit can be effectively shielded from light, so that the occurrence of noise in the longitudinal stripes or the like can be suppressed from occurring in the captured image. Further, in the above embodiment, the solid-state imaging device 2 is an example of the solid-state imaging device of the present invention. Further, in the above embodiment, the camera 40 is an example of the camera of the present invention. Further, in the above-described embodiment, the substrate 110 is an example of the substrate of the present invention. Further, in the above embodiment, the 'pixel area PA' is an example of the pixel area of the present invention. Further, in the above embodiment, the peripheral area SA is an example of a peripheral region of the present invention 128882.doc -37 - 200915553. Further, in the above embodiment, the photodiode 21 is an example of the photoelectric conversion element of the present invention. Further, in the above-described real c* on/in, the color filter is an example of the color filter of the present invention. Further, in the above embodiment, the red filter layer 3 〇丨R is An example of the first color layer, the second color layer, and the third color layer of the present invention. Specifically, in the first or third embodiment, it corresponds to the first color layer or the third color layer of the present invention. On the other hand, in the second embodiment, it corresponds to the second color layer of the present invention. Further, in the above embodiment, the green filter layer 3〇1G is an example of the first color layer or the third color layer of the present invention. Further, in the above embodiment, the 'blue filter layer 3' 1B is an example of the first color layer, the second color layer, and the third color layer of the present invention. Specifically, in the first or third embodiment, it corresponds to the second color layer of the present invention. On the other hand, in the second embodiment, it corresponds to the first color layer or the third color layer of the present invention. Further, in the above embodiment, the 'black layer 3 〇 1K' is an example of the fourth color layer of the present invention. Further, in the above embodiment, the Bayer arrangement is an example of the color arrangement of the present invention. Further, in the practice of the present invention, various modifications are possible without being limited to the above-described embodiment. For example, in the above-described embodiment, the case where the red filter layer 301R, the green filter layer 301A, and the blue filter layer 301B are disposed in the Bayer array is described, but the present invention is not limited thereto. Fig. 13 is a view showing a modified form of the color arrangement of the color filter 3〇1 in the embodiment of the present invention. As shown in Fig. 13 (a), it is also applicable to the penetration of one of the 128882.doc -38 - 200915553 green filter layers 301G in which two Bayer arrays are arranged so as not to color the incident light. The case of window 301T. Further, as shown in FIG. 13(b), in the Bayer arrangement BH, it is also applicable to the case where the rectangular red filter layer 3〇111 and the green filter layer 3〇ig and the blue photoreactor layer are not applied. Each of 301B is disposed in the vertical direction v and the horizontal direction Η', and is disposed so as to be inclined by 45 degrees with respect to the vertical direction v and the horizontal direction η. That is, 'the same applies to the diagonal of the rectangular green filter layer 3 0 1G to arrange two rectangular red filter layers 30 and blue filters in the vertical direction ν. The diagonal line of the layer 301 以 is arranged in the horizontal direction H so that the color filters arranged in the rectangular shape are arranged to form the color filter 301. Further, as shown in FIG. 13(c), it is also applicable to form the color filter 3〇1 in the cyan filter layer 301 (with the magenta filter layer 301M). The yellow filter layer 301Y and the green filter layer 3〇1 (3 is a case where the color of one group is arranged. Further, in the present embodiment, the case where the CMOS image sensor is applied is described, but For example, it can be applied to a CCD (Charge Coupled Device) image sensor. In the present embodiment, a case where a pigment is used as a colorant has been described, but the present invention is not limited thereto. For example, a case where a dye is used as a coloring agent can be applied. Fig. 1 is a configuration diagram showing a configuration of a camera 4 in the first embodiment of the present invention. 128882.doc -39· 200915553 2 is a plan view showing an overall configuration of the solid-state imaging device 1 in the embodiment of the present invention. Fig. 3 is a circuit diagram showing a pixel P provided in the pixel region PA in the first embodiment of the present invention. 4 is shown in the first embodiment of the present invention. A cross-sectional view of the medium solid-state imaging device i. Fig. 5 (a) and (b) are plan views showing the color filter 301 in an enlarged manner in the first embodiment of the present invention.

圖6係為表示在本發明之實施形態1中彩色濾光器301之 分光特性之圖。 圖7(a)-(f)係為表示在本發明之實施形態1中在形成彩色 濾光器3 01之方法中之各步驟中所製造之主要部分之剖面 圖。Fig. 6 is a view showing the spectral characteristics of the color filter 301 in the first embodiment of the present invention. Fig. 7 (a) - (f) are cross-sectional views showing main parts which are produced in the respective steps in the method of forming the color filter 301 in the first embodiment of the present invention.

圖8係為表示在本發明之實施形態2中固體攝像裝置！ 剖面圖。 圖9(a)、（b)係為在本發明之實施形態2中將彩 3〇1予以放大表示之俯視圖。 w 圖l〇(a)-(f)係為在表示在 m哭加一 牡明之實細形態2中在形成彩 邑/慮光3 01之方法中夕々 τ之各步驟中所製造之主要部分 之 器 面圖 之剖Fig. 8 is a view showing a solid-state imaging device according to a second embodiment of the present invention! Sectional view. Fig. 9 (a) and (b) are plan views showing the color 3 〇 1 in an enlarged manner in the second embodiment of the present invention. w Figure l〇(a)-(f) is the main one produced in each step of the method of forming the color enamel/lighting 031 in the solid form 2 of the m-crying plus oyster Sectional section

圖11係為表示在本於明 月之實轭形態3中固體攝像裝琶J 剖面圖 之 圖12(a)、（b)係為在本 I月之實施形態3中將彩色 301予以放大表示之俯視圖。 /邑濾先益 128882.doc •40· 200915553 圖13(a)-(c)係為在表示在本發明之實施形態中關於彩色 濾光器301之色彩排列之變形形態之圖。 【主要元件符號說明】 1 固體攝像裝置 21 光二極體（光電轉換元件） 40 相機 42 光學系統 43 驅動電路 44 信號處理電路 101 基板 301 彩色濾光器 301B 藍色濾光器層（第1色層、 第2色層、第3色層） 301G 綠色濾光器層（第1色層、 第3色層） 301K 黑色層（第4色層） 301R 紅色滤光器層（第1色層、 第2色層、第3色層） BH 拜耳排列 PA 像素區域 SA 周邊區域 128882.doc -41 -Figure 11 is a cross-sectional view showing the solid-state imaging device J in the solid yoke pattern 3 of the present invention, and Fig. 12 (a) and (b) show the color 301 in the third embodiment of the present month. Top view. Fig. 13 (a) - (c) is a view showing a modified form of the color arrangement of the color filter 301 in the embodiment of the present invention. [Description of main component symbols] 1 Solid-state imaging device 21 Optical diode (photoelectric conversion element) 40 Camera 42 Optical system 43 Driving circuit 44 Signal processing circuit 101 Substrate 301 Color filter 301B Blue filter layer (first color layer) , second color layer, third color layer) 301G green filter layer (first color layer, third color layer) 301K black layer (fourth color layer) 301R red filter layer (first color layer, first 2 color layer, 3rd color layer) BH Bayer arrangement PA pixel area SA Peripheral area 128882.doc -41 -

Claims (1)

200915553 、申請專利範圍： 1. :種固體攝像裝置，係於基板之面設置有：像素區域， 其：置有複數個像素’前述像素係包含接受由被攝體像 ^ 卞以先電轉換而生成信號電 二之光電轉換元件；及周邊區域，其純於前述像素區 域之周圍，且形成有處理藉由前述光電轉^件而生成 之信號電荷之周邊電路； 且該固體攝像裝置具有： 彩色滤光器，其係以在與前述基板之面對應之面接受 由前述被攝體像而來之光，且以該光穿透前述基板之面 之方式’而與前述基板相對面地配置； 前述彩色遽光器包含有：第i色層，係以在第】波長帶 中成為較高之光穿透率之方式形成，且供由前述被攝體 像而來之光穿透；及第2色層，係以在與前述第i波長帶 不同之第2波長帶中成為較高之光穿透率之方式形成， 且供由前述被攝體像而來之光穿透；該第丨色層與第^色 層以在與前述基板之面對應之面並排之方式而加以排列 的色彩排列，細在前述像素區財與前述複數個像素 對應之方式而配置有複數個，且在前述周邊區域中係與 前述像素區域同樣地配置有複數個； 〃 且在前述周邊區域中，係進一步將配置於該周邊區域 之複數個色彩排列，以前述第2色層與前述基板之面對 應之面加以被覆之方式而形成。 2.如請求^之固體攝像裝置，其中前述第2色層，係以配 128882.doc 200915553 色彩排列，將配置於最端 之方式形成。 其中前述彩色濾光器係包 3.200915553, the scope of the patent application: 1. The solid-state imaging device is provided with a pixel area on the surface of the substrate, which is provided with a plurality of pixels. The foregoing pixel system includes receiving a signal by the object image to be electrically converted. a photoelectric conversion element of the second electrode; and a peripheral region which is pure to the periphery of the pixel region and is formed with a peripheral circuit for processing signal charges generated by the photoelectric conversion member; and the solid-state imaging device has: color filter And receiving the light from the object image on a surface corresponding to the surface of the substrate, and arranging the light on the surface of the substrate to face the substrate; the color The chopper includes: an i-th color layer formed by a higher light transmittance in the 】th wavelength band, and for light penetration by the image of the subject; and a second color layer, Forming a higher light transmittance in a second wavelength band different from the i-th wavelength band, and transmitting light from the subject image; the third color layer and the second color Layer The color arrangement in which the surfaces corresponding to the surfaces of the substrate are arranged side by side is arranged in a plurality of ways in which the pixel area corresponds to the plurality of pixels, and is similar to the pixel area in the peripheral area. In the peripheral region, a plurality of colors arranged in the peripheral region are further arranged, and the second color layer is covered with a surface corresponding to the surface of the substrate. 2. The solid-state imaging device according to claim 2, wherein the second color layer is formed in a color arrangement of 128882.doc 200915553 and arranged at the extreme end. Wherein the aforementioned color filter package 3. 置在前述周邊區域中之複數個 部之色彩排列之側面予以被覆 如請求項2之固體攝像裝置， 含： 第3色層，其以在與前述第⑽^ 不同之第3波長帶中成為較高之 λ, 丄义丄 心千 < 方式而形 成，且供由則述破攝體像而來之光穿透. 且在前述色彩排列中，係以並 述第2色層之方式，而配置在”色成:：第1色層及前 對應之面。 置在該第3色層與前述基板之面 4, 如請求項3之固體攝像裝置 綠色光之方式形成， 其中别述第1色層係以穿透 前述第2色層係以穿透紅色光之方式形成， 前述第3色層係以穿透藍色光之方式形成。 5.The solid-state imaging device of claim 2 is coated on the side of the color arrangement of the plurality of portions disposed in the peripheral region, and includes: a third color layer which is compared in the third wavelength band different from the above (10) The high λ, 丄 丄 & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & & 高 高 高 高It is disposed in the "color formation:: the first color layer and the front surface. The surface of the third color layer and the substrate 4 is formed by the green light of the solid-state imaging device of claim 3, wherein the first one is described. The color layer is formed to penetrate the second color layer to penetrate the red light, and the third color layer is formed to penetrate the blue light. Π求項4之固體攝像裝置，其中前述彩色遽光器係包 :弟4色層’其係以穿透由前述被攝體像而來之光的光 牙透率，車交前述第1色層與前述第2色層及前述第3色層 之各者更低的方式而形成， 述第4色層，係以在前述周邊區域中被覆前述色 2排列之方式，而疊層㈣述&彩排I 6.種心色據光器，係以與基板之面相對面之方式而配置 有像=區域及周邊區域，且在與前述基板之面對應之面 又由觔述被攝體像而來之光，該光係著色於前述基 面而出射，前述像素區域配置有複數個像素，前述 128882.doc 200915553 像素係包含接受由被攝體像而來之光，且將該接受之光 予以光電轉換而生成信號電荷之光電轉換元件，而前述 周邊區域係位於前述像素區域之周圍，且形成有處理藉 由月ίι述光電轉換元件而生成之信號電荷之周邊電路， 且該彩色濾光器包含有：第丨色層，係以在第1波長帶 中成為較高之光穿透率之方式形成，且供由前述被攝體 像而來之光穿透m色層，係以在與前述第i波長帶 不同之第2波長帶中成為較高之光穿透率之方式形成， 且供由前述被攝體像而來之光穿透；該第丨色層與第^色 層以在與前述基板之面對應之面並排之方式而加以排列 的色彩排列，係以在前述像素區域中與前述複數個像素 對應之方式而配置有複數個，且在前述周邊區域中係與 前述像素區域同樣地配置有複數個； 且在前述周邊區域中，係進一步將配置於該周邊區域 之複數個色彩排列，以前述第2色層與前述基板之面對 應之面加以被覆之方式而形成。 一種相機，係具有固體攝像裝置，該固體攝像裝置係於 基板之面設置有：像素區域，其配置有複數個像素，前 述像素係包含接焚由被攝體像而來之光，且將該接受之 光予以光電轉換而生成信號電荷之光電轉換元件；及周 邊區域，其係位於前述像素區域之周圍，且形成有處理 藉由則述光電轉換元件而生成之信號電荷之周邊電路； 前述固體攝像裝置係包含有： 彩色濾光器’其係在與前述基板之面對應之面中接受 128882.doc 200915553 由前述被攝體像而來之光，且以該光穿透前述基板之面 之方式，而與前述基板相對面地配置； 前述彩色濾光器包含有：第1色層，係以在第1波長帶 中成為較高之光穿透率之方式形成，且供由前述被攝體 像而來之光穿透；及第2色層，係以在與前述第1波長帶 不同之第2波長帶中成為較高之光穿透率之方式形成， 且供由4述被攝體像而來之光穿透；該第I色層與第2色 層以在與前述基板之面對應之面並排之方式而加以排列 〇 的色彩排列，係以在前述像素區域中與前述複數個像素 對應之方式而配置有複數個，且在前述周邊區域中係與 月ij述像素區域同樣地配置有複數個； 且在前述周邊區域中，係進一步將配置於該周邊區域 之複數個色彩排列，以前述第2色層與前述基板之面對 應之面加以被覆之方式而形成。 8. 一種彩色濾光器之製造方法，係以與基板之面相對面之 方式而配置有像素區域及周邊區域，且在與前述基板之 面對應之面中接受由前述被攝體像而來之光，且該光係 穿透前述基板之面者，前述像素區域配置有複數個像 素，前述像素係包含接受由被攝體像而來之光且將該 接受之光予以光電轉換而生成信號電荷之光電轉換= 件’而冑述周邊區域係位於前述像素區域之周g，且形 成有處理藉由前述光電轉換元件而生成之信號電荷之周 邊電路； 其包括彩色遽光器製造步驟，其係製造包含第i色層 128882.doc 200915553 及第2色層之前述彩色遽光器，前述第】色層，係 1波長帶中成為較高之光穿透率 ’ 千<万式形成，且供由前The solid-state imaging device according to Item 4, wherein the color chopper package: the fourth color layer is formed by penetrating the light transmittance of the light from the subject image, and the first color is transmitted by the vehicle. The layer is formed to be lower than each of the second color layer and the third color layer, and the fourth color layer is arranged such that the color 2 is arranged in the peripheral region, and the layer (4) is & Rehearsal I 6. A color-collecting device is provided with an image area and a peripheral area so as to face the surface of the substrate, and the surface corresponding to the surface of the substrate is further described by the object image In the light, the light is colored on the base surface, and a plurality of pixels are arranged in the pixel region, and the 128882.doc 200915553 pixel includes light that receives the image of the object, and the received light is given a photoelectric conversion element for photoelectrically converting to generate a signal charge, wherein the peripheral region is located around the pixel region, and a peripheral circuit for processing a signal charge generated by the photoelectric conversion element is formed, and the color filter is formed Contains: the third layer The light transmittance is formed to be higher in the first wavelength band, and the light from the object image penetrates the m color layer by the second wavelength different from the ith wavelength band. The light is formed in a manner that the light transmittance is higher, and the light is transmitted through the image of the object; the third color layer and the second color layer are arranged side by side on the surface corresponding to the surface of the substrate. The color arrangement is arranged in a plurality of ways corresponding to the plurality of pixels in the pixel region, and a plurality of the peripheral regions are arranged in the same manner as the pixel region; and in the periphery In the region, a plurality of colors arranged in the peripheral region are further arranged, and the second color layer is covered with a surface corresponding to the surface of the substrate. A camera having a solid-state imaging device provided with a pixel region on a surface of a substrate, wherein a plurality of pixels are disposed, and the pixel includes light that is burned by the object image, and the a photoelectric conversion element that receives photoelectrically converted to generate a signal charge; and a peripheral region located around the pixel region and formed with a peripheral circuit for processing a signal charge generated by the photoelectric conversion element; The image pickup device includes: a color filter that receives light from the object image of 128882.doc 200915553 on a surface corresponding to the surface of the substrate, and penetrates the surface of the substrate with the light And the color filter includes: the first color layer is formed to have a higher light transmittance in the first wavelength band, and is provided by the object image And the second color layer is formed so as to have a higher light transmittance in the second wavelength band different from the first wavelength band, and is provided by the fourth color band. The light from the image is penetrated; the color distribution of the first color layer and the second color layer arranged side by side on the surface corresponding to the surface of the substrate is in the pixel region and the foregoing A plurality of pixels are arranged in a plurality of ways, and a plurality of the peripheral regions are arranged in the same manner as the pixel regions in the month, and a plurality of the peripheral regions are further disposed in the peripheral region. The color arrangement is formed by coating the surface of the second color layer corresponding to the surface of the substrate. A method of manufacturing a color filter, wherein a pixel region and a peripheral region are disposed so as to face a surface of the substrate, and the object image is received by a surface corresponding to a surface of the substrate And the light is transmitted through the surface of the substrate, wherein the pixel region is provided with a plurality of pixels, and the pixel includes receiving light from the subject image and photoelectrically converting the received light to generate a signal charge The photoelectric conversion=piece' and the peripheral region is located at the periphery g of the pixel region, and a peripheral circuit for processing signal charges generated by the photoelectric conversion element is formed; and the color chopper manufacturing step is included Producing the above-mentioned color chopper including the i-th color layer 128882.doc 200915553 and the second color layer, the first color layer is formed in a wavelength band of 1 wavelength band, which is formed by a thousand light < before 述被攝體像而來之光穿透，而前述第2色層，係以在斑 前述第1波長帶不同之第2波長帶中成為較高之光穿透率 之方式形成，且供由前述被攝體像而來之光穿透·且前 述彩色濾、光器製造步驟，係以下述方式進行製造：該第 1色層與第2色層以在與前述基板之面對應之面並排之方 式而加以㈣的色彩排列，似在前述像素區域中與前 述複數個像素對應之方式而配置有複數個，且在前述周 邊區域巾係與&述像素區域同樣地配置有複數個； 且在前述彩色遽光器製造步驟中，係於前述周邊區域 :、，進-步將配置於該周邊區域之複數個色彩排列，以 別述第2色層與前述基板之面對應之面加以被覆之方 式，來製造該彩色濾光器。 ’一长員8之杉色濾光器之製造方法，#中前述彩色濾 光器製造步驟係包含有： 第1色層形成步驟，係在與前述基板之面對應之面 中將削述第1色層以與前述色彩排列對應之方式，隔 以間隔而形成有複數個丨及 中*色層形成步驟’係在與前述基板之面對應之面 將别述第2色層以與前述色彩排列對應之方式，隔 以間隔而形成有複數個； 、、⑴述第1色層形成步驟中，係於前述像素區域與前 述周邊區域之各者中形成前述第1色層； I28882.doc 200915553 f前述第2色層形成步驟中，係以將在前述像素區域 與則述周邊區域之各者中形成有前述第1色層之面加以 被覆’且以疊層於該第1色芦之方气 巴增：C万式，在塗佈包含與前 述第2色層對應之色彩之| 巴心之者色劑的塗佈膜後，不將塗佈 於該周邊區域之塗你超；士 - a . A 完佈膜中，疊層於前述第1色層之塗佈 膜去除而殘留，且以去哈太# '于、在5亥像素區域中經塗佈之塗佈 疊層於前述第1色層之塗佈膜之方式，藉由實施 圖案加工而形成前述第2色層。 1 〇.如請求項9之彩色濾光器之製 、 方法，其中在前述第2色 層开> 成步驟中，係以配詈名街、七 置在則述周邊區域之複數個色彩 排列令’將配置於最端部之色 邑衫排列之側面予以被覆之 方式，塗佈包含與前述第2色 匕增對應之色衫之著色劑的 塗佈膜後，藉由配置在該周邊 ^ 司遭£域中之複數個色彩排 列，而將配置於最端部之色彩 ^ 併夕j之側面予以被覆而形 成的塗佈膜加以殘留之方式，來 來實施别述圖案加工，藉 此而形成前述第2色層。 Π·如請求項10之彩色濾光器之製 并哭制半跡总从丄1 法其中珂述彩色濾 先益製造步驟，係精由在與前 弟1波長帶及前述第2波 長帶不Η之第3波長帶中成為較 无穿透率之方洗而 形成，且在由前述被攝體像而 , y. 之光穿透的第3色層斑 刖述基板之面對應之面，以腌# 巴增，、 Λ將並排成前述第 述第2色層之色彩排列，與前 色曰及則 〇則攻像素區域及前诚3p 域對應之方式配置複數個，而制 攻周邊& ^造前述彩$ .请忠gg 12.如請求項11之彩色濾光器 〜 π ° Ik方法，其令前述彩色遽 128882.doc 200915553 光器製造步驟係包含有·· 第色層形成步驟，其係在與前述基板之面對應之面 中，以將前述第3色層與前述色彩排列對應之方式，隔 以複數個間隔而形成； 乂在前述第3色層形成步驟中，係將在前述像素區域與 前述周邊區域中形成有前述第1色層之面加以被覆，且 、且層於蝻述第1色層之方式，在塗佈包含與前述第3色 層對應之色彩之著色劑的塗佈臈後，將塗佈於該像素區 域及周邊區域之塗佈膜中，疊層於前述第丨色層之塗佈 膜予以去除，藉此而形成前述第3色層； 在前述第2色層形成步驟中，係將在前述像素區域與 則述周邊區域中’形成有前述第1色層與前述第3色層各 者之面加以被覆，且以疊層於前述第丨色層與前述第^色 層各者之方式，在塗佈包含與前述第2色層對應之色彩 之著色劑的塗佈膜後，不將塗佈於該周邊區域之塗佈膜 中，疊層於前述第1色層與前述第3色層各者之塗佈臈予 以去除而加以殘留，且將塗佈於該像素區域之塗佈膜 中，疊層於前述第1色層與前述第3色層各者之塗佈臈予 以去除’而形成前述第2色層。 13.如請求項12之彩色濾光器之製造方法，其中在前述第1 色層形成步驟中，係以穿透綠色光之方式形成前述第i 色層， 在前述第2色層形成步驟中，係以穿透紅色光之方式 形成前述第2色層， 128882.doc 200915553 在前述第3色層形成步驟中，係以穿透藍色光之方式 形成前述第3色層。 14·如請求項13之彩色濾光器之製造方法，其中前述彩色濾 光器製造步驟係包含： 第4色層形成步驟’其係形成穿透由前述被攝體像而 來之光之光穿透率，較前述第1色層與前述第2色層及前 述第3色層之各者更低之第4色層； 且在前述第4色層形成步驟中’係以在前述周邊區域 中被覆前述色彩排列，且疊層於前述色彩排列之方式， 而形成前述第4色層。The light of the subject image is penetrated, and the second color layer is formed so as to have a high light transmittance in the second wavelength band different in the first wavelength band of the plaque, and is provided by the aforementioned The light passing through the image is formed, and the color filter and the optical device manufacturing step are manufactured in such a manner that the first color layer and the second color layer are arranged side by side on the surface corresponding to the surface of the substrate. Further, the color arrangement of (4) is arranged in a plurality of ways corresponding to the plurality of pixels in the pixel region, and a plurality of the peripheral region are arranged in the same manner as the & pixel region; In the color chopper manufacturing step, the peripheral region is arranged in a plurality of colors arranged in the peripheral region, and the second color layer is covered with a surface corresponding to the surface of the substrate. To manufacture the color filter. The method for manufacturing a color filter of a member 8 and the color filter manufacturing step of # include: a first color layer forming step, which is to be described in a face corresponding to a surface of the substrate The first color layer is formed on the surface corresponding to the surface of the substrate in a manner corresponding to the color arrangement, and a plurality of 丨 and * color layer forming steps are formed at intervals, and the color layer is different from the color In the first color layer forming step, the first color layer is formed in each of the pixel region and the peripheral region; I28882.doc 200915553 f in the second color layer forming step, the surface on which the first color layer is formed in each of the pixel region and the peripheral region is covered and laminated on the first color Gas-enhanced: C-type, after coating a coating film containing the color of the corresponding color of the second color layer, the coating film applied to the surrounding area is not coated; a. A film is laminated on the first color layer And removing and remaining, and forming the second coating by performing pattern processing so as to apply a coating coating applied to the first color layer in a coating area of 5 liters. Color layer. 1 . The method and method of the color filter of claim 9, wherein in the step of forming the second color layer, a plurality of color arrangements are arranged in the vicinity of the street and seven in the surrounding area. By coating the side of the arrangement of the color shirts arranged at the end, the coating film containing the coloring agent of the color shirt corresponding to the second color is applied, and then disposed on the periphery. The company is arranged in a plurality of colors in the field, and the coating film formed by coating the side of the color of the most end is left to form a coating film, and the pattern processing is performed to form a pattern. The second color layer. Π·If the color filter of claim 10 is made and crying, the traces are always from the 丄1 method, which narrates the color filter first manufacturing steps, and the system is based on the first wavelength band and the second wavelength band. In the third wavelength band of the Η, the surface is formed by washing with no penetration rate, and the surface of the third color layer plaque which is penetrated by the light of the object image and the y. The picking #巴增,, Λ will be arranged side by side in the color arrangement of the second color layer described above, and a plurality of colors are arranged in the manner corresponding to the front color 曰 and then the attack pixel area and the former 3p domain, and the periphery is made. & ^ Create the aforementioned color $. Please loyal gg 12. The color filter ~ π ° Ik method of claim 11, which makes the aforementioned color 遽 128882.doc 200915553 optical manufacturing steps include · · color layer formation a step of forming the third color layer corresponding to the color arrangement in a plurality of intervals on a surface corresponding to the surface of the substrate; and forming the third color layer forming step in the step of forming the third color layer Forming the surface of the first color layer in the pixel region and the peripheral region And coating the coating layer on the pixel region and the peripheral region after applying the coating layer containing the coloring agent corresponding to the color layer corresponding to the third color layer. In the cloth film, the coating film laminated on the first color layer is removed to form the third color layer; and in the second color layer forming step, the pixel region and the peripheral region are formed The surface of each of the first color layer and the third color layer is covered, and is laminated on the first color layer and the second color layer, and the coating includes After the coating film of the coloring agent corresponding to the two color layers is applied to the coating film of the peripheral region, the coating film is applied to each of the first color layer and the third color layer. The film is applied to the coating film of the pixel region, and is applied to the coating layer of each of the first color layer and the third color layer to be removed, thereby forming the second color layer. The method of manufacturing a color filter according to claim 12, wherein in the step of forming the first color layer, the ith color layer is formed by penetrating green light, and in the step of forming the second color layer The second color layer is formed by penetrating red light, 128882.doc 200915553. In the third color layer forming step, the third color layer is formed by penetrating blue light. 14. The method of manufacturing the color filter of claim 13, wherein the color filter manufacturing step comprises: a fourth color layer forming step of forming a light that penetrates the light from the object image a fourth color layer having a lower transmittance than each of the first color layer and each of the second color layer and the third color layer; and in the fourth color layer forming step, 'being in the peripheral region The fourth color layer is formed by covering the color arrangement and laminating the color arrangement. 128882.doc128882.doc
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