TW200911731A - Chrysene derivative, material for organic electroluminescence device, emitting material for organic electroluminescence device and organic electroluminescence device - Google Patents

Chrysene derivative, material for organic electroluminescence device, emitting material for organic electroluminescence device and organic electroluminescence device Download PDF

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TW200911731A
TW200911731A TW097125279A TW97125279A TW200911731A TW 200911731 A TW200911731 A TW 200911731A TW 097125279 A TW097125279 A TW 097125279A TW 97125279 A TW97125279 A TW 97125279A TW 200911731 A TW200911731 A TW 200911731A
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substituted
organic
unsubstituted
compound
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Masahiro Kawamura
Mitsunori Ito
Toshihiro Iwakuma
Kazuki Nishimura
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Idemitsu Kosan Co
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C15/00Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
    • C07C15/20Polycyclic condensed hydrocarbons
    • C07C15/38Polycyclic condensed hydrocarbons containing four rings
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1003Carbocyclic compounds
    • C09K2211/1011Condensed systems
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1044Heterocyclic compounds characterised by ligands containing two nitrogen atoms as heteroatoms
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

A compound obtained by bonding a different aryl group to chrysene having a large energy gap is used as a host for constituting a light-emitting layer of an organic EL device. Consequently, association of molecules is suppressed, thereby making crystallization less likely. An organic EL device having a longer life can be therefore produced easily.

Description

200911731 九、發明說明 【發明所屬之技術領域】 本發明係關於窟衍生物、有機EL元件用材料、有機 EL元件用發光材料、及有機EL元件。 【先前技術】 以往,發光層非爲單一有機化合物所構成,已知藉由 於主體材料添加摻雜劑所構成之有機EL(EleCtr〇luminescence) 元件。 此般有機EL元件中,作爲發光層之主體材料,已知 適用窟之構成(例如、文獻1 :參考特開2004-75 567號公報) 〇 而’文獻1,記載使用以窟爲中心,同一芳基取代基 鍵結之化合物作爲主體材料的實施例。 然而,以此般化合物爲主體材料時,有無法得到實用 的元件壽命的可能性。 本發明之目的係爲了解決該問題,提供可容易長壽命 化的蒽衍生物、有機E L兀件用材料、有機e l元件用發 光材料、及有機EL元件。 【發明內容】 本發明者爲解決該課題’努力硏究,發現藉由以蒽作 爲中心、接上相異芳基取代基’可達成防止主體材料之分 子會合、長壽命化。 -5- 200911731 本發明係根據該知識而完成者。 即’本發明之窟衍生物之特徵係以下述一般式(丨)所表 不 。[Technical Field] The present invention relates to a cave derivative, a material for an organic EL device, a light-emitting material for an organic EL device, and an organic EL device. [Prior Art] Conventionally, the light-emitting layer is not composed of a single organic compound, and an organic EL (EleCtr luminescence) device comprising a dopant added to a host material is known. In the organic EL device, as the main material of the light-emitting layer, it is known that the structure of the hole is applied (for example, Document 1: Reference JP-A-2004-75 567), and Document 1 describes the use of the cave as the center and the same Examples of the aryl substituent-bonded compound as a host material. However, when such a compound is used as a host material, there is a possibility that a practical element life cannot be obtained. In order to solve this problem, an object of the present invention is to provide an anthracene derivative, an organic EL material for a material, a light-emitting material for an organic element, and an organic EL element which can be easily extended in life. In order to solve this problem, the inventors of the present invention have found that it is possible to prevent the host material from meeting and extending the life of the host material by using a hetero-aryl substituent as a center. -5- 200911731 The present invention has been completed in accordance with this knowledge. Namely, the characteristics of the cave derivatives of the present invention are expressed by the following general formula (丨).

一般式(1)中,Ar1、Ar2各自獨立,表示核碳數6〜14 之取代或無取代的芳基以單獨或複數的組合所構成之取代 基。惟’ ArkAr2 ’ Ar1、Ar2不含蒽。Ri〜Rio表示氫原子 或取代基。惟’不包含A r 1爲無取代β萘基時,a r 2爲無取 代苯基、無取代聯苯基、4 -甲基取代苯基、4_(1_萘基)苯 基-1-基及α萘基之情況。 本發明之窟衍生物以下述一般式(2)所表示爲其特徵。 200911731In the general formula (1), Ar1 and Ar2 are each independently, and represent a substituent in which a substituted or unsubstituted aryl group having 6 to 14 carbon atoms is composed of a single or a combination of plural. However, 'ArkAr2' Ar1 and Ar2 do not contain cockroaches. Ri~Rio represents a hydrogen atom or a substituent. However, when 'A r 1 is not substituted β-naphthyl, ar 2 is unsubstituted phenyl, unsubstituted biphenyl, 4-methyl substituted phenyl, 4-(1-naphthyl)phenyl-1-yl And the case of α-naphthyl. The cave derivative of the present invention is characterized by the following general formula (2). 200911731

之萘、取代或無取 一般式(2 )中,A r 3係取代或無取代 代之菲’ Ar4表示核碳數6〜丨4之取件 心似代或無取代的芳基以單 獨或複數的組合所構成之取代基。Rl〜Rll表示氫原子或 取代基。k爲1〜4之整數。又,k爲2以上時,R11彼此可 相同或相異。又,除了 Ar3爲無取代β萘基時,Ar4爲無取 代苯基及α萘基之情況外。 本發明之茴衍生物之特徵係以下述一般式(3)所表示者In the general formula (2), the Ar 3 substituted or unsubstituted phenanthrene 'Ar4 represents a core-like or unsubstituted aryl group having a core carbon number of 6 to 4, either alone or A substituent consisting of a combination of plural numbers. R1 to R11 represent a hydrogen atom or a substituent. k is an integer of 1 to 4. Further, when k is 2 or more, R11 may be the same or different from each other. Further, in the case where Ar3 is an unsubstituted β-naphthyl group, Ar4 is not a substituted phenyl group or an α-naphthyl group. The phenanthrene derivative of the present invention is characterized by the following general formula (3)

(3) 200911731 —般式(3)中,Ar4、Ar5各自獨立,表示核碳數6〜14 之取代或無取代的芳基以單獨或複數的組合所構成之取代 基。惟’ Ar4#Ar5 ’ Ar4、Ar5不含蒽。R1〜R12表示氫原子 或取代基。k爲1〜4之整數。又,k爲2以上時,R11彼此 可相同或相異。1爲1〜4之整數。又,1爲2以上時,R12彼 此可相同或相異。 本發明之窟衍生物之特徵係以下述一般式(4)所表示者(3) In the general formula (3), Ar4 and Ar5 are each independently, and represent a substituent in which a substituted or unsubstituted aryl group having 6 to 14 carbon atoms is composed of a single or a combination of plural. However, 'Ar4#Ar5' Ar4 and Ar5 do not contain bismuth. R1 to R12 represent a hydrogen atom or a substituent. k is an integer of 1 to 4. Further, when k is 2 or more, R11 may be the same or different from each other. 1 is an integer of 1 to 4. Further, when 1 is 2 or more, R12 may be the same or different from each other. The feature of the cave derivative of the present invention is represented by the following general formula (4)

—般式(4)中,Ar6、Ar7各自獨立,表示核碳數5〜14 之取代或無取代之芳基以單獨或複數組合所構成之取代基 。惟,Ar6#Ar7,Ar6、Ar7不含蒽。R2i〜R3〇表示氫原子或 取代基。 接著,本發明之窟衍生物,R1〜R1Q中以至少一個係 核碳數6〜1 4之取代或無取代之芳基構成爲佳。 進一步’本發明之窟衍生物,r21〜r3〇中以至少—個 係核碳數6〜1 4之取代或無取代之芳基構成爲佳。 又’本發明之鹿衍生物,R22與R27係各自獨立,以核 碳數6〜1 4之取代或無取代之芳基以單獨或複數組合所構 200911731 成之取代基構成爲佳。 進一步’本發明之窟衍生物,該芳基取代基以至少 個係下述一般式(5)構造之間苯撐基所構成爲佳。In the general formula (4), Ar6 and Ar7 are each independently a substituent represented by a single or plural combination of a substituted or unsubstituted aryl group having 5 to 14 carbon atoms. However, Ar6#Ar7, Ar6, and Ar7 do not contain strontium. R2i to R3〇 represent a hydrogen atom or a substituent. Next, in the cave derivative of the present invention, it is preferred that R1 to R1Q be composed of at least one substituted or unsubstituted aryl group having 6 to 14 carbon atoms. Further, the cave derivative of the present invention preferably comprises at least one substituted or unsubstituted aryl group having 6 to 14 carbon atoms in the r21 to r3. Further, in the deer derivative of the present invention, R22 and R27 are each independently, and a substituted or unsubstituted aryl group having a carbon number of 6 to 14 is preferably formed by a substituent of 0.111731. Further, the ylide substituent of the present invention preferably comprises at least one phenylene group between the structures of the following general formula (5).

一般式(5)中’ Ar8爲核碳數6〜14之取代或無取代之 芳基以單獨或複數組合所構成之取代基。R 13表示氫原子 或取代基,m爲1〜4之整數。m爲2以上時,:R13彼此可相 同或相異。 本發明之有機EL元件用材料之特徵係含上述窟衍生 物。 本發明之有機EL元件用發光材料之特徵係含上述窟 衍生物。 本發明之有機EL元件係於陰極與陽極間夾持含至少 發光層的一層或複數層所成之有機薄膜層之有機EL元件 ’其特徵係該有機薄膜層之至少一層含上述窟衍生物作爲 單獨或混合物之成分。 接著,本發明之有機EL元件中,前述發光層以含上 述窟衍生物作爲發光材料的構成爲佳。 又,本發明之有機EL元件,前述發光層以含有上述 -9- 200911731 窟衍生物作爲主體材料之構成爲佳。 根據本發明,因作爲構成發光層之主體材料,使用於 窟鍵結相異之芳基者,抑制分子彼此之會合,變得不易引 起發光層之結晶化,可形成均質之膜。而,可得到容易長 壽命化之有機EL元件。 進一步,本發明之有機EL元件中,前述發光層以更 含螢光性或磷光性之摻雜劑之構成爲佳。 又,本發明之有機EL元件中,前述發光層係以含芳 基胺化合物之構成爲佳。 接著,本發明之有機EL元件中,前述發光層以含苯 乙烯基胺化合物之構成爲佳。 又,本發明之有機EL元件中,前述發光層以含芳香 族胺化合物之構成爲佳。 又’本發明中,發光層主體材料的能隙變大,離子化 電位Ip亦變大。 如此一來,主體材料與電洞注入•輸送層間之Ip的 差變大’有對發光層之電洞注入變困難的情況,有令爲獲 得充分的亮度之驅動電壓上昇之虞。 此時’以於發光層添加電荷注入補助劑來緩和電洞注 入障壁爲佳。 此般電荷注入補助劑可利用公知之電洞注入·輸送材 料。 又’本說明書中,「電洞注入.輸送層」係指「電洞 注入層與電洞輸送層之中的至少一者」,「電子注入•輸 -10- 200911731 送層」係指「電子注入層與電子輸送層之中的至少一者 發明之實施形態 以下、說明有關本發明之實施形態。 〔有機EL元件之構成〕 首先,說明有關有機EL元件之元件構成。 有機E L元件之代表的元件構成,可舉例如下 (1) 陽極/發光層/陰極 (2) 陽極/電洞注入層/發光層/陰極 (3) 陽極/發光層/電子注入層/陰極 (4 )陽極/電洞注入層/發光層/電子注入層/陰極 (5) 陽極/有機半導體層/發光層/陰極 (6) 陽極/有機半導體層/電子障壁層/發光層/陰極 (7) 陽極/有機半導體層/發光層/附著改善層/陰極 (8) 陽極/電洞注入層/電洞輸送層/發光層/電子注入層/陰極 (9) 陽極/絶緣層/發光層/絶緣層/陰極 (10) 陽極/無機半導體層/絶緣層/發光層/絶緣層/陰極 (1 1)陽極/有機半導體層/絶緣層/發光層/絶緣層/陰極 (12) 陽極/絶緣層/電洞注入層/電洞輸送層/發光層/絶緣層/ 陰極 (13) 陽極/絶緣層/電洞注入層/電洞輸送層/發光層/電子注 入層/陰極 -11 - 200911731 等之構造。 本實施形態之有機EL元件至少依序 注入層、發光層、電子輸送層、陰極。 此等中,通常較佳係使用(8)之構成 定於此等。 (透光性基板) 有機EL元件爲於透光性之基板上製 基板爲支持有機EL元件之基板,以400〜 光之透過率在50%以上、平滑之基板爲佳 具體上,有玻璃板、聚合物板等。 作爲玻璃板,特別可舉出鹼石灰玻璃 、鉛玻璃、鋁矽酸玻璃、硼矽酸玻璃、鋇 英等。 又,作爲聚合物板可舉出聚碳酸酯、 苯二甲酸乙二酯、聚醚硫化物、聚颯等。 (陽極) 有機EL元件之陽極有使電洞注入電 層之功能,具4_5eV以上之功函數爲有效 之具體例可使用氧化銦錫合金(ITO)、氧 化銦鋅氧化物、金、銀、白金、銅等。又 入電子輸送層或發光層爲目的,以功函數 陽極係可使此等電極物質以蒸鍍法或 具備陽極、電洞 ,但當然並不限 作。所謂透光性 700nm可見區域 、含鋇•緦玻璃 硼矽酸玻璃、石 丙烯酸酯、聚對 洞輸送層或發光 果的。陽極材料 化錫(NESA) '氧 陽極以使電子注 小之材料爲佳。 濺鍍法等方法形 -12- 200911731 成薄膜而製作。 將自發光層之發光自陽極取出時,對於陽極之發光透 過率以比10%大者爲佳。又,陽極之薄片電阻,以數百Ω/口 以下爲佳。陽極之膜厚取決於材料,但一般爲l〇nm〜1μιη ,較佳爲10〜200nm之範圍中選出。 (發光層) 有機EL元件之發光層一併具有以下機能。 即,具有 (1) 注入機能;外加電場時,可自陽極或電洞注入層注入 電洞,可自陰極或電子注入層注入電子之機能、 (2) 輸送機能;將注入之電荷(電子與電洞)以電場之力移動 的機能、 (3) 發光機能;提供電子與電洞再鍵結之場所,將此與發 光聯繫之機能。 惟,注入電洞之容易度與注入電子之容易度可不同, 又,以電洞與電子移動度表示之輸送能雖可有大小之分, 但以使任一方的電荷移動爲佳。 形成發光層之方法,可使用例如蒸鍍法、旋轉塗佈法 、LB法等的公知之方法。 發光層以分子堆積膜爲佳。 於此分子堆積膜係由氣相狀態之材料化合物沈著所形 成之薄膜或由溶液狀態或液相狀態之材料化合物固體化所 形成之膜,一般此分子堆積膜與經LB法所形成之薄膜(分 -13- 200911731 子累積膜)可藉由凝集構造、高次構造之不同、或因此造 成之機能不同而區分。 又,如特開昭5 7-5 1 78 1號公報所揭示,可令樹脂等黏 結劑與材料化合物溶於溶劑成爲溶液後,使此經旋轉塗佈 法等薄膜化而形成發光層。 另外,發光層膜厚,較佳爲5〜50nm、更佳爲7〜 5 Onm '最佳爲10〜50nm。未達5nm則難以形成發光層, 有色度調整變困難之虞,超過5 Onm則有驅動電壓上昇之 虞。 本實施形態之有機EL元件中,發光層含主體材料、 摻雜劑所構成。 接著,主體材料之具體例方面,可舉例以下一般式 (1)、(2)、(3)、(4)中任一者所表示之化合物。In the general formula (5), 'Ar8 is a substituent in which the substituted or unsubstituted aryl group having a carbon number of 6 to 14 is used singly or in combination. R 13 represents a hydrogen atom or a substituent, and m is an integer of 1 to 4. When m is 2 or more, R13 may be the same or different from each other. The material for an organic EL device of the present invention is characterized by the above-mentioned cave derivatives. The luminescent material for an organic EL device of the present invention is characterized by containing the above-mentioned cave derivatives. The organic EL device of the present invention is an organic EL device in which an organic thin film layer comprising at least one layer or a plurality of layers of a light-emitting layer is sandwiched between a cathode and an anode, wherein at least one layer of the organic thin film layer contains the above-mentioned cave derivative as A separate or a mixture of ingredients. In the organic EL device of the present invention, it is preferable that the light-emitting layer has a structure containing the above-mentioned cave derivative as a light-emitting material. Further, in the organic EL device of the present invention, the light-emitting layer is preferably composed of the above-mentioned -9-200911731 cave derivative as a host material. According to the present invention, since the aryl group constituting the light-emitting layer is used in the aryl group in which the holes are bonded, the molecules are prevented from coming into contact with each other, and the crystallization of the light-emitting layer is less likely to occur, and a homogeneous film can be formed. Further, an organic EL device which is easy to extend its life can be obtained. Further, in the organic EL device of the present invention, the light-emitting layer is preferably a composition containing a fluorescent or phosphorescent dopant. Further, in the organic EL device of the present invention, the light-emitting layer is preferably a composition containing an arylamine compound. In the organic EL device of the present invention, it is preferred that the light-emitting layer has a phenylvinylamine-containing compound. Further, in the organic EL device of the present invention, the light-emitting layer is preferably composed of an aromatic amine-containing compound. Further, in the present invention, the energy gap of the light-emitting layer host material is increased, and the ionization potential Ip is also increased. As a result, the difference in Ip between the host material and the hole injection/transport layer becomes large, and it is difficult to inject the hole into the light-emitting layer, and the drive voltage for obtaining sufficient brightness is increased. At this time, it is preferable to add a charge injection auxiliary agent to the light-emitting layer to alleviate the hole injection barrier. Such a charge injecting agent can be injected and transported by a known hole. In the present specification, "hole injection. Transport layer" means "at least one of a hole injection layer and a hole transport layer", and "electron injection/transmission-10-200911731 delivery layer" means "electronic EMBODIMENT OF THE INVENTION In the following, an embodiment of the present invention will be described. [Configuration of Organic EL Element] First, the element configuration of the organic EL element will be described. The composition of the components can be exemplified as follows: (1) anode/light-emitting layer/cathode (2) anode/hole injection layer/light-emitting layer/cathode (3) anode/light-emitting layer/electron injection layer/cathode (4) anode/hole injection Layer / luminescent layer / electron injection layer / cathode (5) anode / organic semiconductor layer / luminescent layer / cathode (6) anode / organic semiconductor layer / electron barrier layer / luminescent layer / cathode (7) anode / organic semiconductor layer / luminescence Layer/Adhesion Improvement Layer/Cathode (8) Anode/Curve Injection Layer/Polar Transport Layer/Light Emitting Layer/Electron Injection Layer/Cathode (9) Anode/Insulation/Light Emitting/Insulation/Cathode (10) Anode/ Inorganic semiconductor layer / insulating layer / luminescent layer / insulating layer / cathode (1 1) anode / Semiconductor layer / insulating layer / luminescent layer / insulating layer / cathode (12) anode / insulating layer / hole injection layer / hole transport layer / luminescent layer / insulating layer / cathode (13) anode / insulating layer / hole injection Layer/hole transport layer/light-emitting layer/electron injection layer/cathode-11-200911731. The organic EL device of the present embodiment injects at least a layer, a light-emitting layer, an electron transport layer, and a cathode in this order. It is preferable to use the configuration of (8). (Translucent substrate) The organic EL device is a substrate on which a light-transmitting substrate is a substrate supporting an organic EL element, and the transmittance of 400 to light is 50%. The above-mentioned smooth substrate is preferably a glass plate, a polymer plate, etc. Examples of the glass plate include soda lime glass, lead glass, aluminosilicate glass, borosilicate glass, and the like. Examples of the polymer sheet include polycarbonate, ethylene phthalate, polyether sulfide, polyfluorene, etc. (Anode) The anode of the organic EL element has a function of injecting a hole into the electric layer, and has a work of 4_5 eV or more. Indium tin oxide alloy (IT) can be used as a specific example of the function O), indium zinc oxide, gold, silver, platinum, copper, etc. For the purpose of entering the electron transport layer or the light-emitting layer, the work function anode can be used for vapor deposition or with anodes and holes. However, it is not limited to the so-called translucent 700 nm visible region, containing bismuth-germanium glass borosilicate glass, stone acrylate, poly-pair transport layer or luminescent fruit. Anode material tin (NESA) 'oxygen anode It is preferable to make the material of the electron injection small. The method of sputtering, etc., is formed by forming a film into a film -12-200911731. When the light emission from the light-emitting layer is taken out from the anode, the light-emitting transmittance to the anode is preferably greater than 10%. Further, the sheet resistance of the anode is preferably several hundred Ω / or less. The film thickness of the anode depends on the material, but is generally selected from the range of 10 nm to 1 μm, preferably 10 to 200 nm. (Light Emitting Layer) The light emitting layer of the organic EL element has the following functions. That is, it has (1) injection function; when an electric field is applied, a hole can be injected from the anode or the hole injection layer, an electron can be injected from the cathode or the electron injection layer, (2) a conveyor function; and the injected charge (electron and The function of the electric hole to move by the force of the electric field, (3) the illuminating function; the place where the electron and the hole are re-bonded, and the function of the illuminating is connected. However, the ease of injecting a hole may be different from the ease of injecting electrons, and the transfer energy expressed by the hole and the degree of electron mobility may be different in size, but it is preferable to move either one of the charges. As a method of forming the light-emitting layer, a known method such as a vapor deposition method, a spin coating method, or an LB method can be used. The light-emitting layer is preferably a molecular deposition film. The molecular deposition film is a film formed by deposition of a material compound in a gas phase state or a film formed by solidification of a material compound in a solution state or a liquid phase state, generally a film formed by the molecular deposition film and a film formed by the LB method ( Sub--13-200911731 sub-accumulation membranes can be distinguished by agglutination structure, high-order structure, or the resulting function. Further, as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. Further, the thickness of the light-emitting layer is preferably 5 to 50 nm, more preferably 7 to 5 nm, and most preferably 10 to 50 nm. When it is less than 5 nm, it is difficult to form a light-emitting layer, and it is difficult to adjust the chromaticity. When the voltage exceeds 5 Onm, the driving voltage rises. In the organic EL device of the present embodiment, the light-emitting layer is composed of a host material and a dopant. Next, specific examples of the host material include compounds represented by any one of the following general formulas (1), (2), (3), and (4).

上述一般式(1)中,A^、Ar2各自獨立,表示核碳數6 〜1 4之取代或無取代的芳基以單獨或複數的組合所構成之 取代基。惟,Ar^Ar2,Ar1、Ar2不含蒽。R1〜R10表示氫 -14- 200911731 原子或取代基。惟,不包含Ar1爲無取代β萘基時’ Ar2爲 無取代苯基、無取代聯苯基、4-甲基取代苯基、4-(1-萘基 )苯基-1-基及α萘基之情況。 含蒽時,因結晶性變過高,有對元件之性能有不良影 響之可能性,故不佳。 核碳數6〜14之芳基,例如、苯基、萘基、菲基、聯 苯基、芴基、聯萘基、苯基萘基等。較佳爲苯基、聯苯基 、萘基、菲基。 取代基,可舉例如烷基(較佳爲碳數1〜2 〇 '更佳爲碳 數1〜12、特佳爲碳數1〜8之烷基,例如甲基、乙基、異 丙基、t-丁基、η_辛基、η-癸基、η -十六院基、環丙基、 環戊基、環己基等)、鏈烯基(較佳爲碳數2〜20、更佳爲 碳數2〜12、特佳爲碳數2〜8之鏈烯基,例如乙烯基、烯 丙基、2-丁烯基、3_戊烯基等)、鏈炔基(較佳爲碳數2〜20 、更佳爲碳數2〜1 2、特佳爲碳數2〜8之鏈炔基,例如丙 炔基、3-戊炔基等)、芳基(較佳爲碳數6〜20、特佳爲6〜 14之芳基,例如苯基、萘基、菲基、芴基)’或雜環基(較 佳爲碳數1〜30、更佳爲碳數1〜12之雜環基’例如咪唑基 、耻陡基、喹D林基、咲喃基、噻吩基、啦U定基、嗎琳代基 、苯並噁唑啉基、苯並咪唑基、苯並噻唑基、咔唑基、苯 並呋喃基、二苯並呋喃基、苯並硫苯基、二苯並硫苯基等 ))、取代或無取代之胺基(較佳爲碳數〇〜20、更佳爲碳數 0〜1 2、特佳爲碳數〇〜6之胺基,例如胺基、甲基胺基、 二甲基胺基、二乙基胺基、二苯基胺基、二苄基胺基等) -15- 200911731 、烷氧基(較佳爲碳數1〜20、更佳爲碳數1〜12、特佳爲 碳數1〜8之烷氧基,例如甲氧基、乙氧基、丁氧基等)、 芳氧基(較佳爲碳數6〜20、更佳爲碳數6〜16、特佳爲碳 數6〜12之芳氧基,例如苯基氧基、2 -萘基氧基等)、醯基 (較佳爲碳數1〜20、更佳爲碳數1〜16、特佳爲碳數1〜12 之醯基,例如乙醯基、苯甲醯基、甲醯基、新戊醯基等) 、烷氧基羰基(較佳爲碳數2〜20、更佳爲碳數2〜16、特 佳爲碳數2〜12之烷氧基羰基,例如甲氧基羰基、乙氧基 羰基等)、芳氧基羰基(較佳爲碳數7〜20、更佳爲碳數7〜 16、特佳爲碳數7〜10之芳氧基羰基’例如苯基氧基羰基 等)、醯基氧基(較佳爲碳數2〜20、更佳爲碳數2〜16、特 佳爲碳數2〜10之醯基氧基,例如乙醯氧基、苯甲醯氧基 等)、醯基胺基(較佳爲碳數2〜20、更佳爲碳數2〜16、特 佳爲碳數2〜1 0之醯基胺基,例如乙醯胺基、苯甲醯胺基 等)、烷氧基羰基胺基(較佳爲碳數2〜20、更佳爲碳數2〜 16、特佳爲碳數2〜12之烷氧基羰基胺基’例如甲氧基羰 基胺基等)、芳氧基羰基胺基(較佳爲碳數7〜20、更佳爲 碳數7〜16、特佳爲碳數7〜12之芳氧基羰基胺基,例如苯 基氧基羰基胺基等)、取代或無取代之磺醯基胺基(較佳爲 碳數1〜20、更佳爲碳數1〜16、特佳爲碳數1〜12之磺醯 基胺基,例如甲烷磺基胺基、苯磺醯基胺基等)、取代或 無取代之磺醯胺基(較佳爲碳數0〜20、更佳爲碳數0〜16 、特佳爲碳數0〜1 2之磺醯胺基’例如磺醯胺基、甲基磺 醯胺基、二甲基磺醯胺基、苯基磺醯胺基等)、取代或無 -16- 200911731 取代之胺甲醯基齡 赛(較佳爲fe數1〜2〇、更佳爲碳數1〜16、 特佳爲碳數1〜 之甲醯基’例如胺甲醯基、甲基胺甲 釀基、一·乙基版^^;^ 女甲酸基、苯基胺甲醯基等)、烷基硫基(較 佳爲碳數1〜2 〇、m ^ Μ机 、更佳爲數1〜16、特佳爲碳數1〜12之 火兀基硫基,例加m甘 甲基硫基、乙基硫基等)、芳基硫基(較佳 爲碳數6〜20、 更佳爲碳數6〜16、特佳爲碳數6〜12之芳 基硫基,例如> ^ 基硫基等)、取代或無取代之磺醯基(較佳 爲碳數1〜2〇、 更k爲碳數1〜16、特佳爲碳數1〜12之磺 醯基,例如甲確甘 # -、基 '擴醯基等)、取代或無取代之亞磺醯 基(較佳爲碳數1 〜2〇、更佳爲碳數1〜16、特佳爲碳數1〜 12之亞磺醯甚 ~ . ’例如甲烷亞磺醯基、苯亞磺醯基等)、取 代或無取代之胞甘/ & 服基(較佳爲碳數!〜]〇、更佳爲碳數 、特佳爲碳數],,+ 〜之脲基’例如脲基、甲基脲基、苯基 服基等)、取仔 π或無取代之磷酸醯胺基(較佳爲碳數1〜2 〇 '更佳爲碳數! ,r Μ1〜16、特佳爲碳數1〜12之磷酸醯胺基,例 如一乙基憐酸酿胺基、苯基磷酸醯胺基等)、羥基、锍基 鹵原子(例如氟原子、氯原子、溴原子、碘原子)、氰基 石貝基、竣基、硝基、氧肟酸基、suifino基、肼基、亞 胺基、雜環基(較佳爲碳數1〜30、更佳爲碳數1〜12之雜 胃«’雜原子方面’例如含氮原子、氧原子 '硫黃原子者 ’具體上例如咪唑基、吡啶基、喹啉基、呋喃基、噻吩基 '啦陡基 '嗎咐代基、苯並噁唑啉基、苯並咪唑基、苯並 嚷哩基、咔唑基、苯並呋喃基.一吁、1 ⑽世什、! ._ /廿 苯基等)、甲矽烷基(較佳爲碳數3〜40、更 一…、二苯並呋喃基、苯並硫苯 基、二苯並硫 -17- 200911731 佳爲碳數3〜3 0、特佳爲碳數3〜24之甲矽烷基,例如二甲 基甲矽烷基、三苯基甲矽烷基等)等。此等之取代基可再 經取代。且取代基有二個以上時,可爲相同或相異。又, 可目b之情況下可相互連結形成環。 上述中’以烷基、鏈烯基、芳基爲佳。In the above general formula (1), A^ and Ar2 are each independently, and represent a substituent in which a substituted or unsubstituted aryl group having a carbon number of 6 to 14 is a combination of singly or plural. However, Ar^Ar2, Ar1, and Ar2 do not contain ruthenium. R1 to R10 represent a hydrogen atom or a substituent of -14-200911731. However, when Ar1 is not substituted with an unsubstituted β-naphthyl group, 'Ar2 is an unsubstituted phenyl group, an unsubstituted biphenyl group, a 4-methyl substituted phenyl group, a 4-(1-naphthyl)phenyl-1-yl group and α. The case of naphthyl. When ruthenium is contained, since the crystallinity is too high, there is a possibility that the performance of the element is adversely affected, which is not preferable. An aryl group having 6 to 14 carbon atoms, for example, a phenyl group, a naphthyl group, a phenanthryl group, a biphenyl group, a fluorenyl group, a binaphthyl group, a phenylnaphthyl group or the like. Preferred are phenyl, biphenyl, naphthyl and phenanthryl. The substituent may, for example, be an alkyl group (preferably having a carbon number of 1 to 2 Å), more preferably a carbon number of 1 to 12, particularly preferably an alkyl group having 1 to 8 carbon atoms, such as a methyl group, an ethyl group or an isopropyl group. , t-butyl, η-octyl, η-fluorenyl, η-hexadecanyl, cyclopropyl, cyclopentyl, cyclohexyl, etc.), alkenyl (preferably carbon number 2 to 20, more Preferably, it is a carbon number of 2 to 12, particularly preferably an alkenyl group having 2 to 8 carbon atoms, such as a vinyl group, an allyl group, a 2-butenyl group, a 3-pentenyl group or the like, an alkynyl group (preferably a carbon number of 2 to 20, more preferably a carbon number of 2 to 1, 2, particularly preferably an alkynyl group having a carbon number of 2 to 8, such as a propynyl group or a 3-pentynyl group, or an aryl group (preferably a carbon number) 6 to 20, particularly preferably an aryl group of 6 to 14, such as a phenyl group, a naphthyl group, a phenanthryl group or a fluorenyl group, or a heterocyclic group (preferably having a carbon number of 1 to 30, more preferably a carbon number of 1 to 12) Heterocyclic group 'e.g. imidazolyl, succinyl, quinolinyl, fluorenyl, thienyl, aryl, morphinyl, benzoxazolyl, benzimidazolyl, benzothiazolyl , carbazolyl, benzofuranyl, dibenzofuranyl, benzothiophenyl, dibenzothiophenyl, etc.), substituted or unsubstituted An amine group (preferably having a carbon number of 〇20 to 20, more preferably a carbon number of 0 to 1 2, particularly preferably an amine group having a carbon number of 〇6, such as an amine group, a methylamino group, a dimethylamino group, or a second group; Ethylamino group, diphenylamino group, dibenzylamino group, etc.) -15-200911731, alkoxy group (preferably having a carbon number of 1 to 20, more preferably a carbon number of 1 to 12, particularly preferably a carbon number) 1 to 8 alkoxy group, such as methoxy, ethoxy, butoxy, etc.), aryloxy group (preferably having a carbon number of 6 to 20, more preferably 6 to 16 carbon atoms, particularly preferably a carbon number) 6 to 12 aryloxy groups, such as phenyloxy group, 2-naphthyloxy group, etc.), fluorenyl group (preferably having a carbon number of 1 to 20, more preferably a carbon number of 1 to 16, and particularly preferably a carbon number of 1) a fluorenyl group of ~12, such as an ethyl fluorenyl group, a benzamidine group, a decyl group, a neopentyl group, etc., an alkoxycarbonyl group (preferably having a carbon number of 2 to 20, more preferably a carbon number of 2 to 16, Particularly preferred is an alkoxycarbonyl group having 2 to 12 carbon atoms, such as a methoxycarbonyl group or an ethoxycarbonyl group, and an aryloxycarbonyl group (preferably having a carbon number of 7 to 20, more preferably a carbon number of 7 to 16). Particularly preferred is an aryloxycarbonyl group having a carbon number of 7 to 10, such as a phenyloxycarbonyl group, or a mercaptooxy group (preferably a carbon number of 2 to 2). 20, more preferably a carbon number of 2 to 16, particularly preferably a decyloxy group having a carbon number of 2 to 10, such as an ethoxycarbonyl group, a benzhydryloxy group, or the like, or a mercaptoamine group (preferably a carbon number of 2) More preferably, it is a carbon number of 2 to 16, more preferably a fluorenylamino group having a carbon number of 2 to 10, such as an acetamino group or a benzylamino group, or an alkoxycarbonylamino group. It is a carbon number of 2 to 20, more preferably a carbon number of 2 to 16, particularly preferably an alkoxycarbonylamino group having a carbon number of 2 to 12, such as a methoxycarbonylamino group, or an aryloxycarbonylamino group. Preferred is a carbon number of 7 to 20, more preferably a carbon number of 7 to 16, particularly preferably an aryloxycarbonylamino group having a carbon number of 7 to 12, such as a phenyloxycarbonylamino group, a substituted or unsubstituted sulfonate. a mercaptoamine group (preferably a carbon number of 1 to 20, more preferably a carbon number of 1 to 16, particularly preferably a sulfonylamino group having a carbon number of 1 to 12, such as methanesulfonylamino, phenylsulfonylamine a sulfonamide group which is substituted or unsubstituted (preferably having a carbon number of 0 to 20, more preferably a carbon number of 0 to 16, particularly preferably a sulfonylamino group having a carbon number of 0 to 12) such as a sulfonium sulfonate. Amine, methylsulfonylamino, dimethylsulfonylamino, phenylsulfonylamino, etc.), substituted or -16- 200911731 Substituted amine formazan base age (preferably fe number 1 to 2 Å, more preferably carbon number 1 to 16, particularly preferably carbon number 1 to methionyl group) Methylamine methyl alcohol, monoethyl ester ^^; ^ female formate, phenylamine carbenyl, etc., alkylthio (preferably carbon number 1~2 〇, m ^ Μ machine, more Preferably, the number is from 1 to 16, particularly preferably from 1 to 12 carbon atoms, by way of example, m-methylthio group, ethylthio group or the like, and arylthio group (preferably having a carbon number of from 6 to 20). More preferably, it is an arylthio group having a carbon number of 6 to 16, particularly preferably a carbon number of 6 to 12, such as > ^thio group, etc., a substituted or unsubstituted sulfonyl group (preferably having a carbon number of 1 to 2) 〇, more k is a carbon number of 1 to 16, particularly preferably a sulfonyl group having a carbon number of 1 to 12, such as a guagan #-, a thiol group, etc., a substituted or unsubstituted sulfinyl group (more Preferably, the carbon number is 1 to 2 Å, more preferably the carbon number is 1 to 16, and particularly preferably the carbon number is 1 to 12, and the sulfinium is very low. 'For example, methane sulfinyl group, phenyl sulfinyl group, etc.), substituted Or unsubstituted cellulite / & base (preferably carbon number! ~] 〇, more preferably carbon number, especially carbon number], + ureido group [such as urea group, methyl urea group, phenyl group, etc.), taking π or unsubstituted guanamine phosphate The base (preferably having a carbon number of 1 to 2 〇' is more preferably a carbon number!, r Μ1 to 16, particularly preferably a guanamine group having a carbon number of 1 to 12, such as a ethyl group, an amine group, a phenyl group. a guanidinium phosphate group, etc., a hydroxyl group, a sulfhydryl halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), a cyanostone, a sulfhydryl group, a nitro group, a hydroxamic acid group, a suifino group, a fluorenyl group, An imido group or a heterocyclic group (preferably having a carbon number of 1 to 30, more preferably a carbon number of 1 to 12, a hetero atom), for example, a nitrogen atom or an oxygen atom 'sulfur atom', for example, Imidazolyl, pyridyl, quinolyl, furyl, thienyl', sulphonyl, benzoxyl, benzimidazolyl, benzimidyl, oxazolyl, benzofuran基.一言,1 (10)Shishi, !.__廿phenyl, etc.), formylalkyl (preferably carbon number 3~40, more..., dibenzofuranyl, benzothiophenyl, two Benzosulfone-17- 200911731 0 3~3 carbon atoms, and particularly preferably an alkyl group having a carbon number of 3~24 A silicon of, for example, alkyl-dimethylformamide silicon, silicon triphenylsilyl group, etc.) and the like. These substituents can be substituted. When there are two or more substituents, they may be the same or different. Further, in the case of b, it is possible to form a ring by being connected to each other. In the above, 'alkyl group, alkenyl group and aryl group are preferred.

(2) 上述一般式(2)中,Ar3係取代或無取代之萘、取代或 …、取代之菲,A〆表示核碳數6〜14之取代或無取代的芳基 以單獨或複數的組合所構成之取代基。R 1〜R 1 1表示氫原 子戈取代基。k爲1〜4之整數。又,k爲2以上時,R11彼 此可相同或相異。又,不包含Ar3爲無取代β萘基時,Ar4 爲無取代苯基及α萘基之情況。 於構成有機EL元件之有機薄膜層含有上述一般式(2) 之窟衍生物,則由量子效率提高之觀點來看爲佳。 -18- (3) (3)200911731(2) In the above general formula (2), Ar3 is a substituted or unsubstituted naphthalene, a substituted or a substituted phenanthrene, and A〆 represents a substituted or unsubstituted aryl group having a core carbon number of 6 to 14 in a single or plural number. The substituents formed by the combination. R 1 to R 1 1 represent a hydrogen atom Ge substituent. k is an integer of 1 to 4. Further, when k is 2 or more, R11 may be the same or different from each other. Further, when Ar3 is not substituted with a β-naphthyl group, Ar4 is an unsubstituted phenyl group and an α-naphthyl group. When the organic thin film layer constituting the organic EL element contains the above-mentioned general formula (2), it is preferable from the viewpoint of improving quantum efficiency. -18- (3) (3) 200911731

上述一般式(3)中,Ar4、Ar5各自獨立’表示核碳數6 〜1 4之取代或無取代的芳基以單獨或複數的組合所構成之 取代基。惟,ArWAr5 ’ Α〆、Ar5不含蒽。Rl〜Rl2表示氫 原子或取代基。k爲1〜4之整數。又’ k爲2以上時’ Rl1 彼此可相同或相異。1爲1〜4之整數。又’ 1爲2以上時’ R 12彼此可相同或相異。 於構成有機EL元件之有機薄膜層含有上述一般式(3) 之窟衍生物,則因量子效率提高之觀點來看爲佳。In the above general formula (3), Ar4 and Ar5 each independently represent a substituent in which a substituted or unsubstituted aryl group having a carbon number of 6 to 14 is used alone or in combination. However, ArWAr5 ’ Α〆 and Ar5 do not contain 蒽. R1 to R12 represent a hydrogen atom or a substituent. k is an integer of 1 to 4. Further, when 'k is 2 or more', Rl1 may be the same or different from each other. 1 is an integer of 1 to 4. Further, when '1 is 2 or more', R 12 may be the same or different from each other. When the organic thin film layer constituting the organic EL element contains the above-mentioned general formula (3), it is preferable from the viewpoint of improving quantum efficiency.

上述〜般式(4)中,Ar6、Ar7各自獨立,表示核碳數6 〜1 4之取代或無取代的芳基以單獨或複數的組合所構成之 取代基。惟,Ar6#Ar7,Ar6、Ar7不含蒽。R21〜R3G表示氫 -19- 200911731 原子或取代基。 在此,一般式(1)中,A"係取代或無取代之萘、取代 或無取代之菲的構成由耐熱性之觀點來看爲丨圭。 又,一般式(1)〜(4)中,Ri〜Rl〇'或' r21〜r3〇之中 ,以至少一個S核碳數6〜丨4之取代或無取代之芳基之構 成爲佳。 6〜 進一步’ 一般式(4)中,R21〜 1 4之取代或無取代之芳基場合 R3Q中至少一個係核碳數 、R22與R27係各自獨立 爲核碳數6〜14之取代或ίΕ取代:> $甘丨、,。 心μ八·収rc e方基以單獨或複數組 合 所構成之取代基之構成由耐熱性之觀點來看爲佳。 1個係下述 又,一般式(1)〜(4)中,芳基取代基以至少 一般式(5)構造之間苯撐基所構成爲佳。In the above formula (4), Ar6 and Ar7 are each independently a substituent represented by a combination of a single or plural number of substituted or unsubstituted aryl groups having a carbon number of 6 to 14 . However, Ar6#Ar7, Ar6, and Ar7 do not contain strontium. R21 to R3G represent hydrogen -19-200911731 atom or substituent. Here, in the general formula (1), the constitution of the substituted or unsubstituted naphthalene, substituted or unsubstituted phenanthrene is from the viewpoint of heat resistance. Further, in the general formulae (1) to (4), among Ri to Rl 〇' or 'r21 to r3 〇, it is preferred that at least one S-nuclear carbon number 6 to 丨4 substituted or unsubstituted aryl group is preferable. . 6~ Further 'In the general formula (4), in the case of a substituted or unsubstituted aryl group of R21 to 14 4, at least one of the nucleus carbon atoms in the R3Q, and the R22 and R27 systems are each independently substituted by a nuclear carbon number of 6 to 14 or Replace: > $ Gan,,. It is preferable that the composition of the substituent formed by the core or the rc e group in a single or complex array is preferable from the viewpoint of heat resistance. Further, in the general formulae (1) to (4), the aryl substituent is preferably constituted by a phenylene group at least in the structure of the general formula (5).

〜述一般式(5)中,八^爲核碳數6〜M之取代或無 之芳基以單獨或複數組合所構成之取代基。ri 3袠示 子或取代基,m爲!〜4之整數。m爲2以上時, 相同或相貞 彼 接著’滿足此等般要件之化合物如以下所示。 -20- 200911731In the general formula (5), 八 is a substituent in which the aryl group having a carbon number of 6 to M is substituted or not, and the aryl group is a combination of singly or plural. Ri 3 shows the sub or substituent, m is! An integer of ~4. When m is 2 or more, the same or opposite, and the following compounds satisfying such requirements are as follows. -20- 200911731

-21 - 200911731-21 - 200911731

本發明中,螢光發光性摻雜劑以下述式(1 3)所表示之 胺化合物爲佳。 -22 - (13) (13)200911731In the present invention, the fluorescent dopant is preferably an amine compound represented by the following formula (13). -22 - (13) (13)200911731

上述式(13)中、p爲取代或無取代之核碳數6〜4〇之芳 香族煙基、取代或無取代之核原子數3〜4〇之雜環基、或 取代或無取代之苯乙烯基。k爲1〜3之整數。In the above formula (13), p is a substituted or unsubstituted aryl group having 6 to 4 Å of a core carbon number, a substituted or unsubstituted heterocyclic group having a core number of 3 to 4 Å, or a substituted or unsubstituted group. Styryl. k is an integer of 1 to 3.

Arl〜ΑΓ各自獨立’爲取代或無取代之核碳數6〜4〇 之芳香族烴基或取代或無取代之核原子數3〜40之雜環基 ’ s爲〇〜4之整數。 Αγ1、Λι·2、P中任意所選出之2個鄰接之取代基彼此 可相互鍵結形成環。k爲2以上時,Ρ可相同或相異。 P之芳香族烴基及雜環基之例方面,各自可舉例如取 代或無取代之核碳數6〜4 0之芳香族烴基、取代或無取代 之核原子數3〜40之雜環基,例如苯、聯苯、聯三苯、萘 、菲、熒蒽、蒽、芘、茈、暈苯、窟、匠、二萘、三萘、 苯基蒽、二苯基蒽、芴、三苯撐、玉紅省、苯蒽、二苯蒽 、苊並熒蒽、三苯並戊芬基、熒蒽並熒蒽、苯並二熒蒽、 苯並熒蒽、二茚並茈(diindenoperylene)之殘基,特別以萘 、菲、熒蒽、蒽、芘基、茈基、窟、苯基蒽、二苯基蒽之 殘基及此等複數組合之殘基爲佳。 上述式(13)中,Ar1〜Ar4各自獨立,取代或無取代之 -23- 200911731 核碳數6〜40之芳香族烴基或取代或無取代之核原子數3〜 40之雜環基,s爲0〜4之整數。Arl~ΑΓ each independently' is a substituted or unsubstituted aryl group having 6 to 4 Å of an aromatic carbon group or a substituted or unsubstituted heterocyclic group having a number of cores of 3 to 40 ’s is an integer of 〇~4. Any two adjacent substituents selected from Αγ1, Λι·2, and P may be bonded to each other to form a ring. When k is 2 or more, Ρ may be the same or different. Examples of the aromatic hydrocarbon group and the heterocyclic group of P include, for example, a substituted or unsubstituted aromatic hydrocarbon group having a core carbon number of from 6 to 40, and a substituted or unsubstituted heterocyclic group having a core number of from 3 to 40. For example, benzene, biphenyl, terphenyl, naphthalene, phenanthrene, fluoranthene, anthracene, anthracene, anthracene, pyrene, cave, smith, dinaphthalene, trinaphthalene, phenyl hydrazine, diphenyl hydrazine, hydrazine, triphenylene , Yuhong Province, benzoquinone, diphenyl hydrazine, fluoranthene, fluorenyl, tribendivenyl, fluoranthene and fluoranthene, benzofluoranthene, benzofluoranthene, diindenoperylene The base is particularly preferably a residue of naphthalene, phenanthrene, fluoranthene, anthracene, fluorenyl, fluorenyl, sulfonium, phenylhydrazine, diphenylphosphonium and the like. In the above formula (13), Ar1 to Ar4 are each independently substituted or unsubstituted -23-200911731 having an aromatic hydrocarbon group having 6 to 40 carbon atoms or a substituted or unsubstituted heterocyclic group having 3 to 40 nuclear atoms, s It is an integer from 0 to 4.

Ar1〜Ar4之芳香族烴基之例方面,可舉例如苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲 基、3-菲基、4-菲基、9-菲基、1-丁省基、2-丁省基、9-丁省基、卜芘基、2-芘基、4-芘基、2-聯苯基、3-聯苯基 、4 -聯苯基、p -聯三苯基-4 -基、p -聯三苯基-3 -基、p -聯三 苯基-2 -基、m -聯三苯基-4 _基、m -聯三苯基-3 -基、m -聯三 苯基-2-基、〇 -甲苯基、m -甲苯基、p -甲苯基、p-t-丁基苯 基、p-(2-苯基丙基)苯基、3-甲基-2-萘基、4-甲基-1-萘基 、4-甲基-1-蒽基、4’-甲基聯苯基、4”-t-丁基-P-聯三苯 基-4-基等。Examples of the aromatic hydrocarbon group of Ar1 to Ar4 include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, a 1-phenanthryl group, and a 2-phenanthrene group. Base, 3-phenanthryl, 4-phenanthryl, 9-phenanthryl, 1-butyl, 2-butyl, 9-butyl, diterpene, 2-mercapto, 4-indenyl, 2-linked Phenyl, 3-biphenylyl, 4-biphenylyl, p-bitriphenyl-4-yl, p-bitriphenyl-3-yl, p-bitriphenyl-2-yl, m- Biphenyl-4-yl, m-bitriphenyl-3-yl, m-bitriphenyl-2-yl, fluorenyl-tolyl, m-tolyl, p-tolyl, pt-butyl Phenyl, p-(2-phenylpropyl)phenyl, 3-methyl-2-naphthyl, 4-methyl-1-naphthyl, 4-methyl-1-indenyl, 4'-A A phenyl group, a 4"-t-butyl-P-biphenyl-4-yl group, and the like.

Ar1〜Ar4之雜環基之例方面,1-吡咯基、2-吡咯基、 3 -吡咯基、吡嗪基、2 -吡啶基、3 -吡啶基、4 -吡啶基、1 -口引噪基、2 - D引U朵基、3 - D引D朵基、4 - D引D朵基、5 - D引哄基、6 -吲哚基、7-吲哚基、1-異吲哚基、2-異吲哚基、3-異吲哚 基、4-異吲哚基、5-異吲哚基、6-異吲哚基、7-異吲哚基 、2 -呋喃基、3 -呋喃基、2 -苯並呋喃基、3 -苯並呋喃基、 4 -苯並呋喃基、5 -苯並呋喃基、6 -苯並呋喃基、7 -苯並呋 喃基、1-異苯並呋喃基、3 -異苯並呋喃基、4 -異苯並呋喃 基、5 -異苯並呋喃基、6 -異苯並呋喃基、7 -異苯並呋喃基 、喹啉基、3 -喹啉基、4 -喹啉基、5 -喹啉基、6 -喹啉基、 7 -喹啉基、8 -喹啉基、1 -異喹啉基、3 -異喹啉基、4 -異喹 琳基、5 -異喹啉基、6 -異喹啉基、7 -異喹啉基、8 -異喹啉 -24- 200911731 基、2 -喹喔啉基、5 -喹喔啉基、6 -喹喔啉基、1 -咔唑基、 2-咔唑基、3-味唑基、4-咔唑基、9-味唑基、1-菲啶基、 2 -菲D定基、3 -菲D疋基、4 -非卩疋基、6 -非卩疋基、7 -非D疋基、 8 -菲啶基、9 -菲啶基、1 0 -菲啶基、1 -吖啶基、2 -吖啶基、 3 -吖啶基、4 -吖啶基、9 -吖啶基、1,7 -菲羅啉-2 -基、1,7 -菲羅啉-3-基、1,7-菲羅啉-4-基、1,7-菲羅啉-5-基、1,7_菲 羅琳-6-基、1,7 -菲羅啉-8-基、1,7 -菲羅啉-9-基、1,7 -菲羅 啉-10 -基、1,8-菲羅啉-2-基、1,8-菲羅啉-3-基、1,8-菲羅 琳-4 -基、1,8-非維琳-5-基、1,8-非維琳-6-基、1,8 -非羅 啉-7-基、1,8 -菲羅啉-9-基、1,8 -菲羅啉-10_基、1,9-菲羅 啉-2-基、1,9-菲羅啉-3-基、1,9-菲羅啉-4-基、1,9-菲羅 啉-5-基、1,9 -菲羅啉-6-基、1,9 -菲羅啉-7-基、1,9 -菲羅 啉-8-基、1,9 -菲羅啉-10 -基、1,10 -菲羅啉-2-基、1,10 -菲 羅啉-3-基、1,10-菲羅啉-4-基、1,10-菲羅啉-5-基、2,9-菲 羅啉-1-基、2,9-菲羅啉-3-基、2,9-菲羅啉-4-基、2,9-菲羅 琳-5-基、2,9-非維琳-6-基、2,9 -非維卩林-7-基、2,9 -非羅 琳-8-基、2,9-非維琳-10 -基、2,8-非維琳-1-基、2,8-非羅 啉-3-基、2,8 -菲羅啉-4-基、2,8 -菲羅啉-5-基、2,8 -菲羅 啉-6-基、2,8-菲羅啉-7_基、2,8-菲羅啉-9-基、2,8-菲羅 啉-10 -基、2,7 -菲羅啉-1-基、2,7 -菲羅啉-3-基、2,7 -菲羅 啉-4-基、2,7-菲羅啉-5-基、2,7-菲羅啉-6-基、2,7-菲羅 啉-8-基、2,7-菲羅啉-9-基、2,7-菲羅啉-10-基、1-吩嗪基 、2-吩嗪基、1-吩噻嗪基、2-吩噻嗪基、3 -吩噻嗪基、4- 吩噻嗦基、10-吩噻曉基、1-Phenoxazinyl、2-Phenoxazinyl -25- 200911731 、3-Phenoxazinyl、4-Phenoxazinyl、10-Phenoxazinyl、2 - 噁唑基、4 -噁唑基、5 -噁唑基、2 -噁二唑基、5 -噁二唑基 、3 -呋咱基、2 -噻吩基、3 -噻吩基、2 -甲基吡咯-1 -基、2 -甲基吡咯-3 -基、2 -甲基吡咯-4 -基、2 -甲基吡咯-5 -基、3 -甲基吡咯-1 -基、3 -甲基吡咯-2 -基、3 -甲基吡咯-4 -基、3 -甲基吡咯-5-基、2-t-丁基吡咯-4-基、3-(2-苯基丙基)吡咯-1 -基' 2 -甲基-1 -吲哚基、4 -甲基-1 -吲哚基、2 -甲基-3 -吲 哄基、4 -甲基- 3- D引哄基、2-t -丁基1-D引哄基、4-t -丁某1-口引卩朵基、2 -1 - 丁基3 -卩引卩朵基、4 -1 - 丁基3 - D引卩朵基寺。 以下、表示作爲上述式(1 3 )所表示之胺化合物之具體 例之縮合芳香族胺、苯乙烯基胺、聯苯胺等,但不限定於 此等。又,Me表示甲基。 -26- 200911731Examples of the heterocyclic group of Ar1 to Ar4, 1-pyrrolyl, 2-pyrrolyl, 3-pyrrolyl, pyrazinyl, 2-pyridyl, 3-pyridyl, 4-pyridyl, 1-oxo noise Base, 2 - D, U, D, D, D, D, D, D, D, D, D, D, D, D, D, D, D, D, D, D Base, 2-isoindolyl, 3-isoindolyl, 4-isoindolyl, 5-isodecyl, 6-isodecyl, 7-isoindolyl, 2-furyl, 3 -furanyl, 2-benzofuranyl, 3-benzofuranyl, 4-benzofuranyl, 5-benzofuranyl, 6-benzofuranyl, 7-benzofuranyl, 1-isophenyl And furyl, 3-isobenzofuranyl, 4-isobenzofuranyl, 5-isobenzofuranyl, 6-isobenzofuranyl, 7-isobenzofuranyl, quinolyl, 3- Quinolinyl, 4-quinolinyl, 5-quinolinyl, 6-quinolyl, 7-quinolinyl, 8-quinolinyl, 1-isoquinolinyl, 3-isoquinolinyl, 4- Isoquinolinyl, 5-isoquinolyl, 6-isoquinolinyl, 7-isoquinolyl, 8-isoquinoline-24- 200911731, 2 -quinoxalinyl, 5-quinoxalinyl , 6-quinoxalinyl, 1-oxazolyl, 2-hydrazine Azyl, 3-oxazolyl, 4-oxazolyl, 9-oxazolyl, 1-phenanthryl, 2-phenanthridine, 3-phenanthrene, 4-nonyl, 6-non Indenyl, 7-non-D-decyl, 8-phenanthryl, 9-phenanthryl, 10-phenanthryl, 1-anridinoyl, 2-anridinoyl, 3-anthridyl, 4- Acridinyl, 9-acridinyl, 1,7-phenanthroline-2-yl, 1,7-phenanthroline-3-yl, 1,7-phenanthroline-4-yl, 1,7- Phenanthroline-5-yl, 1,7-phenolene-6-yl, 1,7-phenanthroline-8-yl, 1,7-phenanthroline-9-yl, 1,7-phenro Porphyrin-10-yl, 1,8-phenanthroline-2-yl, 1,8-phenanthroline-3-yl, 1,8-phenolene-4-yl, 1,8-phenanthrene- 5-Based, 1,8-Norveline-6-yl, 1,8-non-roroline-7-yl, 1,8-phenanthroline-9-yl, 1,8-phenanthroline-10_ 1,1, phenanthroline-2-yl, 1,9-phenanthroline-3-yl, 1,9-phenanthroline-4-yl, 1,9-phenanthroline-5-yl, 1,9-phenanthroline-6-yl, 1,9-phenanthroline-7-yl, 1,9-phenanthroline-8-yl, 1,9-phenanthroline-10-yl, 1, 10-phenanthroline-2-yl, 1,10-phenanthroline-3-yl, 1,10-phenanthroline-4-yl, 1,10-phenanthroline-5-yl, 2,9- Phenanthroline-1-yl, 2,9-phenanthroline-3-yl, 2,9-phenro 4-yl, 2,9-phenolene-5-yl, 2,9-phenanthrene-6-yl, 2,9-non-vitamin-7-yl, 2,9-felolin 8-Based, 2,9-N-Verylin-10-yl, 2,8-N-Velin-1-yl, 2,8-Norrotolin-3-yl, 2,8-phenanthroline-4- , 2,8-phenanthroline-5-yl, 2,8-phenanthroline-6-yl, 2,8-phenanthroline-7-yl, 2,8-phenanthroline-9-yl, 2,8-phenanthroline-10-yl, 2,7-phenanthroline-1-yl, 2,7-phenanthroline-3-yl, 2,7-phenanthroline-4-yl, 2, 7-phenanthroline-5-yl, 2,7-phenanthroline-6-yl, 2,7-phenanthroline-8-yl, 2,7-phenanthroline-9-yl, 2,7- Phenanthroline-10-yl, 1-phenazine, 2-phenazine, 1-phenothiazine, 2-phenothiazine, 3-phenothiazine, 4-phenothiphenyl, 10- Phenothiaphthyl, 1-Phenoxazinyl, 2-Phenoxazinyl-25-200911731, 3-Phenoxazinyl, 4-Phenoxazinyl, 10-Phenoxazinyl, 2-oxazolyl, 4-oxazolyl, 5-oxazolyl, 2-oxo Diazolyl, 5-oxadiazolyl, 3-furenyl, 2-thienyl, 3-thiophenyl, 2-methylpyrrole-1-yl, 2-methylpyrrole-3-yl, 2-methyl Pyridyl-4-yl, 2-methylpyrrole-5-yl, 3-methylpyrrole-1-yl, 3-methylpyrrole-2-yl, 3-methyl Pyrrol-4-yl, 3-methylpyrrole-5-yl, 2-t-butylpyrrol-4-yl, 3-(2-phenylpropyl)pyrrole-1-yl'2-methyl-1 - mercapto, 4-methyl-1-indenyl, 2-methyl-3-indenyl, 4-methyl-3-D-indenyl, 2-t-butyl 1-D Base, 4-t-Dingmou 1-port 卩 卩, 2 -1 - butyl 3 - 卩 卩 卩, 4 -1 - butyl 3 - D 卩 卩 基 。 。. In the following, a condensed aromatic amine, a styrylamine, a benzidine or the like which is a specific example of the amine compound represented by the above formula (13) is shown, but is not limited thereto. Also, Me represents a methyl group. -26- 200911731

-27- 200911731-27- 200911731

Z3-(V) 92-(v) s-(v) 寸义 V) ω 28- 200911731 αZ3-(V) 92-(v) s-(v) Integrity V) ω 28- 200911731 α

s-(v) 9ε-<) ζε-(ν) s-(v) -29- 200911731S-(v) 9ε-<) ζε-(ν) s-(v) -29- 200911731

ΘΙΛΙ ①1ΛΙ llv) CN寸-(V)ΘΙΛΙ 11ΛΙ llv) CN inch-(V)

9'(ν)9'(ν)

cn9-(v)Cn9-(v)

①1ΛΙ s-(v) 0寸-<)11ΛΙ s-(v) 0 inch-<)

61V) -30- 20091173161V) -30- 200911731

09-(v) s-(v)09-(v) s-(v)

S9-(V)S9-(V)

s—(v)S—(v)

co9_(v) -31 - 200911731Co9_(v) -31 - 200911731

§-(< 0ΙΛΙω1ΛΙ§-(< 0ΙΛΙω1ΛΙ

a2 99-(ν)A2 99-(ν)

9ιλι εζ—(ν) 929ιλι εζ—(ν) 92

3Z 人 V) ①ΙΛΙ3Z people V) 1ΙΛΙ

ιζ 入 V) ①ΙΛΙΖζ into V) 1ΙΛΙ

UU

d Ρd Ρ

zz-(v) 9Z-(V) sz—(v) 91ΛΙ 91Λ1 9ΙΛΙ ①1Λ!Zz-(v) 9Z-(V) sz—(v) 91ΛΙ 91Λ1 9ΙΛΙ 11Λ!

寸 z-<) -32- 200911731Inch z-<) -32- 200911731

91ΛΙ91ΛΙ

岑(V) ①1Λ1①1ΛΙ ①ΙΛΙ岑(V) 11Λ111ΛΙ 1ΙΛΙ

寸 8-(<) ① ΙΛΙωΙΛΙωΙΛ1Inch 8-(<) 1 ΙΛΙωΙΛΙωΙΛ1

εοοέ ^ΙΛΙΘΙΛΙΕοοέ ^ΙΛΙΘΙΛΙ

Ν9-(ν) ωιΛιωιΛΙΟΙΛΙΝ9-(ν) ωιΛιωιΛΙΟΙΛΙ

0000_(<) §-<) 卜 9-(< 99-( V) -33- 2009117310000_(<) §-<) Bu 9-(< 99-( V) -33- 200911731

co6_(v)Co6_(v)

9ΙΛ1ωΙΛ! s-(v)9ΙΛ1ωΙΛ! s-(v)

卜 6-(v)Bu 6-(v)

i—(v)I—(v)

06-(v)06-(v)

-34- 200911731-34- 200911731

I ①1ΛΙI 11ΛΙ

εον(ν) mmΕον(ν) mm

ΦΙΛΙ ① |/\1人① ΙΛί- ωΙΛΙ ① ΙΛΙ ①!ΛΓΦ1ΛΙΦΙΛΙ 1 |/\1人1 ΙΛί- ωΙΛΙ 1 ΙΛΙ 1! ΛΓΦ1ΛΙ

οοοτ(ν) 301_(< ① 1ΛΙωΙΛΙ①1ΛΙ ①ΙΛΙ _ωΙΛΙ yl02ΦΙΛΙ sok(v) αγγ Λ ①ΙΛΙΟοοτ(ν) 301_(< 1 1ΛΙωΙΛΙ11ΛΙ 1ΙΛΙ _ωΙΛΙ yl02ΦΙΛΙ sok(v) αγγ Λ 1ΙΛΙ

①1Λ111Λ1

9ΙΛ1 9ΙΛΙΛ ① ΙΛΙ- ① ΙΛΙωιΛΙ ① 1ΛΓ ① 1ΛΙ9ΙΛ1 9ΙΛΙΛ 1 ΙΛΙ- 1 ΙΛΙωιΛΙ 1 1ΛΓ 1 1ΛΙ

ωΙΛΙ θ1ΛΙωΙΛΙω1ΛΙ ,,ωΙΛΙ ^_ωι/\ιωΙΛΙ ST(V) ①ΙΛΙ-/ iΩΙΛΙ θ1ΛΙωΙΛΙω1ΛΙ ,,ωΙΛΙ ^_ωι/\ιωΙΛΙ ST(V) 1ΙΛΙ-/ i

①1ΛΙ①1ΛΙ ΘΙΛΙωιΛΙ11ΛΙ11ΛΙ ΘΙΛΙωιΛΙ

ΘΙΛΙωιΛΙ ST(V) 90T(V) 35- 200911731ΘΙΛΙωιΛΙ ST(V) 90T(V) 35- 200911731

Ni(v) 9U,(V) su-(v) -36- 200911731Ni(v) 9U, (V) su-(v) -36- 200911731

δ-(ν) §-( V) 6U-(V) 9U-(V)Δ-(ν) §-( V) 6U-(V) 9U-(V)

63T(V) s-(v) ζ9-(ν) 93ZV) -37- 20091173163T(V) s-(v) ζ9-(ν) 93ZV) -37- 200911731

εετ(ν) οιλιθιλιΕετ(ν) οιλιθιλι

^τ(ν) οετ(ν)^τ(ν) οετ(ν)

ΦΙΛΙ 91ΛΙ 9ετ(ν)ΦΙΛΙ 91ΛΙ 9ετ(ν)

ω!ΛΙ 6εζν)ω!ΛΙ 6εζν)

3ετ(ν)3ετ(ν)

95 寸 ετ(ν) ωΙΛΙιυΙΛΙ ω1ΛΙ ΦΙΛΙ ΦΙΛΙ95 inches ετ(ν) ωΙΛΙιυΙΛΙ ω1ΛΙ ΦΙΛΙ ΦΙΛΙ

i 9εν(ν)i 9εν(ν)

ζετ(ν) 9|Λ1 -38- 200911731 ΖΗ-(ν)Ζετ(ν) 9|Λ1 -38- 200911731 ΖΗ-(ν)

9 寸 k<) ΘΙΛΙωιΛΙ -I 9|Λ| 最αιΛΙ m-(v) ωιΛΙ9 inch k<) ΘΙΛΙωιΛΙ -I 9|Λ| Most αιΛΙ m-(v) ωιΛΙ

寸寸'(<)Inch' (<)

ZH-(V) as ώιΛΙ ΦΙΛΙ ωΙΛΙ 9|Λ1ZH-(V) as ώιΛΙ ΦΙΛΙ ωΙΛΙ 9|Λ1

εΗ_(ν) i >‘Φ1ΛΙΗΗ_(ν) i >‘Φ1ΛΙ

ιυ5<υΙΛΙ 9H-(V) -39- 200911731Υυ5<υΙΛΙ 9H-(V) -39- 200911731

-40- 200911731-40- 200911731

-41 - 200911731 EM32-41 - 200911731 EM32

EM34 EM35EM34 EM35

(A)-168 (A)_169(A)-168 (A)_169

-42 - 200911731 EM41-42 - 200911731 EM41

CH=CHCH=CH

CH=CHCH=CH

(A)-172 (A)-173(A)-172 (A)-173

-43- 200911731-43- 200911731

(A)-176 (A)-177 EM48(A)-176 (A)-177 EM48

EM50EM50

(A)-180 -44- 200911731 EM51(A)-180 -44- 200911731 EM51

(A)-182 (A)-183 (A)-184(A)-182 (A)-183 (A)-184

Me Me -45- 200911731 EM56 EM57Me Me -45- 200911731 EM56 EM57

EM58EM58

(A)-188 EM59 EM60 Or(A)-188 EM59 EM60 Or

CH=CH EM61 EM62 OrCH=CH EM61 EM62 Or

CH=CH (AH 89 (A)-190 (A)-191 "Ο (A)-192 -46 - 200911731CH=CH (AH 89 (A)-190 (A)-191 "Ο (A)-192 -46 - 200911731

(A)-194 CH=CH (A)-193(A)-194 CH=CH (A)-193

CH=CH (A)-195CH=CH (A)-195

又,可爲含以下般咔唑基之化合物。 -47- 200911731Further, it may be a compound containing the following carbazolyl group. -47- 200911731

(A)-164 本發明中,螢光發光性摻雜劑可爲下述式(21)〜(24) 之任一所表示之熒蒽衍生物。(A)-164 In the present invention, the fluorescent dopant may be a fluoranthene derivative represented by any one of the following formulas (21) to (24).

• · · (21) • (22) -48- (23) 200911731• · · (21) • (22) -48- (23) 200911731

式(21)〜(24)中,Xi〜X52各自獨立,表示氫原子、鹵 原子、取代或無取代之直鏈、分支或環狀之碳原子數卜 30之院基、取代或無取代之直鏈、分支或環狀之碳原子數 1〜30之k氧基、取代或無取代之直鏈、分支或環狀之碳 原子數1〜30之烷基硫基、取代或無取代之直鏈、分支或 環狀之碳原子數2〜3〇之義S、㈣或無取代之直鍵、 分支或環狀之碳原子數2〜1〇之鏈烯基氧基、取代或無取 代之直鏈、分支或環狀之碳原子數2〜3〇之鏈烯基硫基、 取代或無取代之碳原子數7〜30之芳烷基、取代或無取代 之碳原子數7〜30之芳烷基氧基、取代或無取代之碳原子 數7〜30之芳烷基硫基、取代或無取代之碳原子數6〜2〇之 芳基、取代或無取代之碳原子數6〜20之芳氧基、取代或 無取代之碳原子數6〜20之芳基硫基、取代或無取代之碳 原子數2〜30之胺基、氰基、甲矽烷基、經基、_c〇〇Rie 基(基中 環狀之碳原子數1〜30之烷基 '取代或無取代之直鍵 分 支或環狀之碳原子數2〜3 0之鏈烯基、取代 μ代琛無取代之碳 原子數7〜30之芳烷基、或、取代或無取代7 ^ |〈之細原子數6〜 -49- 1 〇之芳基)、-c〇R2e基(基中、R2e表示氫庳;w 4原子、取代或無 200911731 取代之直鏈、分支或環狀之碳原子數1〜30之院基、取代 或無取代之直鏈、分支或環狀之碳原子數2〜30之鏈烯基 、取代或無取代之碳原子數7〜3〇之芳烷基、取代或無取 代之碳原子數6〜30之芳基、或、胺基)、-〇COR3e基(基 中、1136爲取代或無取代之直鏈、分支或環狀之碳原子數1 〜3 0之烷基、取代或無取代之直鏈、分支或環狀之碳原子 數2〜30之鏈烯基、取代或無取代之碳原子數7〜30之芳烷 基、取代或無取代之碳原子數6〜30之芳基),進一步,X1 〜X52之中’鄰接之基及各基的取代基相互鍵結,可形成 取代或無取代之碳環。 此般熒蒽衍生物,可舉例如以下者。 -50- 200911731In the formulae (21) to (24), Xi to X52 are each independently represented by a hydrogen atom, a halogen atom, a substituted or unsubstituted linear, branched or cyclic carbon atom, and are substituted or unsubstituted. a linear, branched or cyclic k-oxy group having 1 to 30 carbon atoms, a substituted or unsubstituted linear, branched or cyclic alkylthio group having 1 to 30 carbon atoms, substituted or unsubstituted. a chain, a branched or a cyclic carbon atom having a number of 2 to 3 Å, a (4) or unsubstituted direct bond, a branched or cyclic chain having 2 to 1 ring of an alkenyloxy group, substituted or unsubstituted. a linear, branched or cyclic alkenylthio group having 2 to 3 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted carbon atom number of 7 to 30 Aralkyloxy, substituted or unsubstituted aralkylthio group having 7 to 30 carbon atoms, substituted or unsubstituted aryl group having 6 to 2 carbon atoms, substituted or unsubstituted carbon atom number 6~ 20 aryloxy, substituted or unsubstituted arylthio group having 6 to 20 carbon atoms, substituted or unsubstituted amino group having 2 to 30 carbon atoms, cyano group, formyl group, , _c〇〇Rie group (alkyl group having a carbon atom number of 1 to 30 in the ring) substituted or unsubstituted direct bond branch or cyclic alkenyl group having 2 to 30 carbon atoms, substituted μ 琛Unsubstituted aralkyl group having 7 to 30 carbon atoms, or substituted or unsubstituted 7 ^ | <fine atom number 6 to -49- 1 aryl group), -c〇R2e group (based, R2e Hydrogen hydrazine; w 4 atom, substituted or unsubstituted 200911731 substituted straight chain, branched or cyclic, 1 to 30 carbon atom, substituted or unsubstituted linear, branched or cyclic carbon atom 2~ An alkenyl group of 30, a substituted or unsubstituted aralkyl group having 7 to 3 Å of a carbon atom, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or an amine group, and a 〇COR3e group. , 1136 is a substituted or unsubstituted linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted linear, branched or cyclic alkene having 2 to 30 carbon atoms. a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and further, a radical of the adjacent group and each of X1 to X52 Groups bonded to each other, may form a substituted or unsubstituted ring of carbon. Such a fluoranthene derivative can be exemplified by the following. -50- 200911731

-51 - 200911731-51 - 200911731

-52- 200911731-52- 200911731

-53- 200911731-53- 200911731

-54- 200911731-54- 200911731

-55 200911731-55 200911731

-56- 200911731-56- 200911731

-57- 200911731-57- 200911731

S COS CO

-58- 200911731-58- 200911731

-59- 200911731-59- 200911731

-60- 200911731-60- 200911731

-61 200911731-61 200911731

sTl·CNJokl· 62 -62 - 200911731sTl·CNJokl· 62 -62 - 200911731

-63- 200911731-63- 200911731

⑦ τ ι CM7 τ ι CM

00 τ ι CNJ00 τ ι CNJ

•64- 200911731•64- 200911731

-65 - 200911731-65 - 200911731

-66- 200911731-66- 200911731

-67- 200911731-67- 200911731

本發明中,前述螢光性摻雜劑可爲下述式(3 1 )所表示 之者。 -68- (31) (31)200911731In the present invention, the fluorescent dopant may be represented by the following formula (3 1 ). -68- (31) (31)200911731

上述式(31)中、A及A’表示對應含1個以上氮之6員芳 香族環之獨立嗪環系,In the above formula (31), A and A' represent an independentazine ring system corresponding to a 6-member aromatic ring containing one or more nitrogens.

Xa&amp; Xb表示各自獨立選出之取代基,其二個鍵結, 可形成對A或A’之縮合環者, m及η各自獨立表示0〜4,Xa&amp;Xb represents independently selected substituents, and the two bonds may form a condensed ring for A or A', and m and η each independently represent 0 to 4,

Za及Zb爲各自獨立選出之取代基, 卜2、3、4、1’、2’、3’及4’爲碳原子或氮原子之任 一,爲獨立所選出。 嗪環以、表示1、2、3、4、1,、2,、3,及4,全爲碳原 子,m及η爲2以上,且Xa及χ*&gt;表示形成芳香族環用之 鍵結2個以上之碳取代基之喹啉環或異喹啉環爲佳。za及 Zb以氟原子爲佳。 較佳形態方面’ 2個的縮合環系爲喹啉或異喹琳系, 芳基或雜芳基取代基爲苯基,至少存在形成6_6縮合環用 的鍵結之2個Xa基及2個Xb基,縮合環系各自以1-2位、 3-4位、I’-2’位或3,-4’位進行縮合,縮合環之一方或兩方 被苯基所取代,且可舉例如下述式(91)、(92)或(93)所表 示般螢光發光性摻雜劑。 -69- • · · (91) 200911731 xeZa and Zb are independently selected substituents, and 2, 3, 4, 1', 2', 3' and 4' are each a carbon atom or a nitrogen atom, and are independently selected. The azine ring is represented by 1, 2, 3, 4, 1, 2, 3, and 4, all of which are carbon atoms, and m and η are 2 or more, and Xa and χ*&gt; indicate formation of an aromatic ring. Preferably, a quinoline ring or an isoquinoline ring having two or more carbon substituents bonded thereto is preferred. Preferably, za and Zb are fluorine atoms. In a preferred embodiment, the two fused ring systems are quinoline or isoquineline, the aryl or heteroaryl substituent is phenyl, and at least two Xa groups and two bonds forming a 6-6 condensed ring are present. Xb-based, condensed ring systems are each condensed in the 1-2 position, the 3-4 position, the I'-2' position or the 3,-4' position, and one or both of the condensation rings are substituted by a phenyl group, and can be exemplified A fluorescent dopant such as represented by the following formula (91), (92) or (93). -69- • · · (91) 200911731 xe

xh xh xh • · · (92) .· · (93) 上述式(91)〜(93)中、各 Xc、Xd、Xe、 雖爲氫或獨立選出之取代基,但其中一個必 芳基。 嗪環以]、2、3、4、1,、2,、3,及 4,全 及η爲2以上,Xa及Xb表示爲了形成芳香! 個以上之碳取代基,且一個爲芳基或取代芳 xf、xg 及 xh 須爲芳基或雜 爲碳原子,m 妄環之鍵結的2 基之喹啉環或 -70- 200911731 異喹啉環爲佳。za及zb以氟原子爲佳。 以下、爲以脫質子化雙(嗪基)胺配位基之2個環氮經 錯合物化之硼化合物,該2個環氮爲相異6,6縮合環系,該 至少一者之系爲含芳基或雜芳基取代基者的一部分,於本 發明中,舉例有用的硼化合物。Xh xh xh • (92) (93) In the above formulae (91) to (93), each of Xc, Xd, and Xe is hydrogen or an independently selected substituent, but one of them is an aryl group. The azine ring is 2, 3, 4, 1, 2, 3, and 4, and η is 2 or more, and Xa and Xb are expressed in order to form a fragrance! More than one carbon substituent, and one is an aryl group or a substituted aryl group xf, xg and xh must be an aryl group or a heteroatom carbon atom, a m-quinone ring-bonded 2-base quinoline ring or -70-200911731 isoquine A porphyrin ring is preferred. Preferably, za and zb are fluorine atoms. Hereinafter, a boron compound which is decomposed by two ring nitrogens which are deprotonated bis(azinyl)amine ligands, wherein the two ring nitrogens are different 6,6 condensed ring systems, the at least one As a part of those containing an aryl or heteroaryl substituent, in the present invention, a useful boron compound is exemplified.

-71 - 200911731 摻雜劑,可使用磷光性者。 燐光性㉟雜劑之具體例方面’例如、PQIr(iridium(III) bis(2-phenyl quinolyl-N,C2)acetylacetonate)等、可舉例如下 述化合物。-71 - 200911731 Dopant, can be used for phosphorescence. Specific examples of the light-sensitive 35 dopants, for example, PQIr (iridium (III) bis (2-phenyl quinolyl-N, C2) acetylacetonate), and the like can be exemplified as the following compounds.

• N、• N,

-72- 200911731-72- 200911731

-73- 200911731-73- 200911731

i「(ppy)3i"(ppy)3

-74 - 200911731-74 - 200911731

(電洞注入·輸送層(電洞輸送區域)) 電洞注入·輸送層爲幫助向發光層的電洞注入,輸送 之發光領域爲止的層,電洞移動度大,離子化能量通常小 -75- 200911731 至5 · 5 e V以下。此般電洞注入•輸送層’以較低電場強度 將電洞輸送至發光層之材料爲佳,進一步電洞之移動度以 例如外加104〜106V/cm電場時,至少l〇-4cm2/Vs爲佳。 此般電洞注入層或電洞輸送層之形成材料,具體上例 如三唑衍生物(美國專利3,1 12,197號說明書等作爲參考)、 噁二唑衍生物(美國專利3,1 89,447號說明書等作爲參考)、 咪唑衍生物(特公昭37-16096號公報等作爲參考)、聚芳基 烷烴衍生物(美國專利3,6 1 5,4 0 2號說明書、同第3,8 2 〇 , 9 8 9 號說明書、同第3,5 42,5 44號說明書、特公昭45 -55 5號公報 、同5 1 - 1 0 9 8 3號公報、特開昭5 1 -93 224號公報、同55-17105號公報、同56-4148號公報、同55-108667號公報、 同5 5 - 1 5 69 5 3號公報、同5 6-36656號公報等作爲參考)、吡 唑啉衍生物及吡唑啉酮衍生物(美國專利第3, 1 80,729號說 明書、同第4,278,746號說明書、特開昭5 5 -8 8064號公報、 同55-88065號公報、同49-105537號公報、同55-51086號 公報、同5 6- 8 00 5 1號公報、同5 6- 8 8 141號公報、同57-45545號公報、同54-112637號公報、同55-74546號公報等 作爲參考)、苯撐基二胺衍生物(美國專利第3,6 1 5,404號說 明書、特公昭51-10105號公報、同46-3 7 1 2號公報、同47-25336號公報、特開昭54-53435號公報、同54-110536號公 報、同54- 1 1 9925號公報等作爲參考)、芳基胺衍生物(美 國專利第3,5 67,45 0號說明書、同第3,180,7〇3號說明書、 同第3,240,597號說明書、同第3,658,520號說明書、同第 4,232,103號說明書、同第4,175,961號說明書、同第 -76- 200911731 4,012,376號說明書、特公昭49-35702號公報、同39-27577 號公報、特開昭55-144250號公報、同56-119132號公報、 同56-22437號公報、西德專利第1,11〇, 518號說明書等作爲 參考)、胺取代查耳酮衍生物(美國專利第3,5 2 6,5 0 1號說明 書等作爲參考)、噁唑衍生物(美國專利第3,25 7,203號說明 書等所揭示者)、苯乙烯基蒽衍生物(特開昭5 6-46234號公 報等作爲參考)、芴酮衍生物(特開昭54-110837號公報等 作爲參考)、腙衍生物(美國專利第3,7 1 7,4 6 2號說明書、特 開昭54-59 1 43號公報、同5 5 - 5 2 06 3號公報、同5 5 -5 2064號 公報、同55-46760號公報、同55-85495號公報、同57-1 1 3 5 0號公報、同5 7- 1 48 749號公報、特開平2-311591號公 報等作爲參考)、芪衍生物(特開昭6 1 -2 1 0363號公報、同 第6 1 -2284 5 1號公報、同6 1 - 1 4642號公報、同6 1 -72255號 公報、同62-47646號公報、同62-36674號公報、同62-10652號公報 '同62-30255號公報、同60-93455號公報、 同60-94462號公報、同60- 1 74749號公報、同60- 1 75052號 公報等作爲參考)、矽氮烷衍生物(美國專利第4,9 5 0,9 5 0號 說明書)、聚矽烷系(特開平2-204996號公報)、苯胺系共聚 合物(特開平2-2 82263號公報)、特開平1 -2 1 1 399號公報所 揭示之導電性高分子寡聚物(特別係噻吩寡聚物)等。 電洞注入層或電洞輸送層之材料,雖可使用上述之者 ’亦可使用卟啉化合物(特開昭63 -295 69 5號公報等所揭示 者)、芳香族第三級胺化合物及苯乙烯基胺化合物(美國專 利第4,127,412號說明書、特開昭5 3 -2703 3號公報、同54- -77- 200911731 5 8445號公報、同5 4- 1 4963 4號公報、同54-64299號公報、 同55-79450號公報、同5 5 - 1 4425 0號公報、同5 6- 1 1 9 1 3 2號 公報、同6 1 - 2 9 5 5 5 8號公報、同6 1 - 9 8 3 5 3號公報、同6 3 - 29W95號公報等作爲參考)、芳香族第三級胺化合物。又 美國專利第5,06 1,5 69號所記載之於分子內具有2個縮合芳 香族環,例如4,4’-雙(N-(l-萘基)-N-苯基胺)聯苯基、又特 開平4-3 0 8 6 8 8號公報所記載之三苯基胺單元連接爲3個星 爆型之4,4’,4&quot;-三(N-(3-甲基苯基)-N-苯基胺)三苯基胺等 。又,專利公報第3614405號、3571977號或美國專利 4,78 0,5 3 6所記載之六氮雜三苯撐基衍生物等亦可適用作 爲電洞注入性之材料。進一步,除作爲發光層之材料所示 之前述之芳香族二次甲基系化合物外,亦可使用p型Si 、p型SiC等無機化合物作爲電洞注入層或電洞輸送層之 材料。 此電洞注入層或電洞輸送層可以上述材料之1種或2種 以上所成之一層所構成,又’亦可爲電洞注入層或電洞輸 送層爲不同種之化合物所成之電洞注入層或電洞輸送層所 層合者。電洞注入層或電洞輸送層之膜厚雖無特別限制, 較佳爲20〜200nm。 (有機半導體層) 有機半導體層爲對發光層幫助電洞注入或電子注入之 層’以具有10-1GS/cm以上之導電率者爲佳。此般有機半 導體層之材料,可使用含噻吩寡聚物或特開平8_193191號 -78- 200911731 公報所記載之含芳基胺寡聚物等之導電性寡聚物'含# $ 胺樹枝狀高分子等之導電性樹枝狀高分子等。有機半導體 層之膜厚雖無特別限制,較佳爲〜l,〇〇〇nm。 (電子注入·輸送層(電子輸送區域)) 在陰極與黃色〜紅色系發光層之間,作爲第二之有機 層,可設置電子注入層或電子輸送層等。電子注入層或電 子輸送層爲對發光層幫助電子注入之層,電子移動度大。 電子注入層爲爲了緩和能階急速變化等、調整能階而設置 。電子注入層或電子輸送層所用之材料,以8-羥基喹啉或 其衍生物之金屬錯合物、噁二唑衍生物、含氮雜環衍生物 爲佳。上述8-羥基喹啉或其衍生物之金屬錯合物之具體例 方面,可使用含〇XINE(—般爲8-喹啉酚或8-羥基喹啉)之 螯合物的金屬螯合物ο X i η 〇 i d化合物、例如三(8 -唾啉酣) 鋁。接著’噁二唑衍生物,可舉例如下述一般式所表示之 電子傳遞化合物。(The hole injection/transport layer (hole transport area)) The hole injection/transport layer is a layer that facilitates injection into the hole of the light-emitting layer and transports the light-emitting region. The hole mobility is large, and the ionization energy is usually small. 75- 200911731 to 5 · 5 e V or less. Such a hole injection/transport layer is preferably a material that transports holes to the light-emitting layer at a lower electric field strength, and further mobility of the hole is, for example, at least 10 to 4 cm 2 /Vs when an electric field of 104 to 106 V/cm is applied. It is better. Such a material for forming a hole injection layer or a hole transport layer, specifically, for example, a triazole derivative (refer to the specification of U.S. Patent No. 3,1,12,197, etc.), an oxadiazole derivative (US Patent No. 3,1,89,447) (For reference), an imidazole derivative (for reference), a polyarylalkane derivative (U.S. Patent No. 3,6,5,042, the same as No. 3,8 2, No. 9 8-9, the same as No. 3, 5 42, 5 44, Japanese Patent Publication No. 45-55 5, the same as 5 1 - 1 0 9 8 3, and JP-A-5-93224 Japanese Patent Publication No. 55-17105, Japanese Patent Publication No. 56-4148, No. 55-108667, the same as the Japanese Patent Publication No. 5-5-35656, and the like. And a pyrazolone derivative (U.S. Patent No. 3,180,729, the specification of which is the same as the specification of No. 4,278,746, the Japanese Patent Publication No. 5-5-8 8064, the same as No. 55-88065, the same as No. 49-105537, the same Japanese Patent Publication No. 55-51086, the same as 5-6-8 00 5 1 , the same as 5-6-8 141, the same as 57-45545, the same as 54-112637, the same 55 -74546, etc., as a reference), a phenylene diamine derivative (U.S. Patent No. 3,6,5,404, Japanese Patent Publication No. 51-10105, the same as No. 46-3 7 1 2, the same as 47-25336 An arylamine derivative (U.S. Patent No. 3,5 67,45 0), the disclosure of which is incorporated herein by reference. , with the 3rd, 180th, 7th and 3rd instructions, the same as the 3rd, 240th, 597th, the same as the 3rd, 658, 520, the 4th, 232, 103, the 4th, 175, 961, the same -76-200911731 4, 012, 376, the special public 49 -35702, Japanese Patent Publication No. 39-27577, Japanese Patent Application Laid-Open No. Hei 55-144250, No. 56-119132, No. 56-22437, No. 1,11, No. 518, etc. , amine-substituted chalcone derivatives (US Patent No. 3, 5 2, 5, 1 1 and the like), oxazole derivatives (disclosed in the specification of U.S. Patent No. 3, 25, 203, etc.), benzene Vinyl hydrazine derivative (Japanese Patent Laid-Open No. Hei 5-6-46234, etc.) (Japanese Patent Laid-Open No. Sho 54-110837, etc.) and anthracene derivatives (U.S. Patent No. 3,7,7,4,6, 2, and JP-A-54-59 1 43, the same as 5 5 - 5 Japanese Patent Publication No. 2-6, No. 5-5-5, No. 55-46760, Japanese Patent Publication No. 55-85495, Japanese Patent Publication No. 57-1135, and Japanese Patent Publication No. 5-7-148749 Japanese Laid-Open Patent Publication No. Hei No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. No. Nos. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 60-. - 1 74749, the same as the reference of 60- 1 75052, etc.), a decazane derivative (U.S. Patent No. 4,900,900), and a polydecane system (Japanese Patent Laid-Open No. 2-204996) Japanese Laid-Open Patent Publication No. Hei. The material of the hole injection layer or the hole transport layer may be a porphyrin compound (except as disclosed in JP-A-63-295 69 5), an aromatic tertiary amine compound, and the like. Styrylamine compound (U.S. Patent No. 4,127,412, Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. -64299, the same as 55-79450, the same as 5 5 - 1 4425 0, the same as 5 6 - 1 1 9 1 3 2, the same as 6 1 - 2 9 5 5 5 8 1 - 9 8 3 5 No. 3, the same as the Japanese Patent Publication No. 63-29W95, etc.), an aromatic tertiary amine compound. Further, as described in U.S. Patent No. 5,06,5,69, there are two condensed aromatic rings in the molecule, such as 4,4'-bis(N-(l-naphthyl)-N-phenylamine). The triphenylamine unit described in the phenyl group and the special opening 4-3 0 8 6 8 8 is connected to 3 starburst type 4,4',4&quot;-tris(N-(3-methylbenzene) Base) -N-phenylamine) triphenylamine or the like. Further, the hexaazatriphenylene derivative described in Patent Publication No. 3614405, No. 3571977 or U.S. Patent No. 4,78 0,5 3 6 can also be suitably used as a material for hole injection. Further, in addition to the above-described aromatic secondary methyl compound as the material of the light-emitting layer, an inorganic compound such as p-type Si or p-type SiC may be used as the material of the hole injection layer or the hole transport layer. The hole injection layer or the hole transport layer may be formed of one or more of the above materials, and may also be a compound in which the hole injection layer or the hole transport layer is a different kind of compound. The layer is injected by the hole injection layer or the hole transport layer. The film thickness of the hole injection layer or the hole transport layer is not particularly limited, but is preferably 20 to 200 nm. (Organic semiconductor layer) The organic semiconductor layer is preferably a layer which contributes to hole injection or electron injection to the light-emitting layer, and has a conductivity of 10-1 GS/cm or more. As the material of the organic semiconductor layer, a conductive oligomer containing an arylamine oligomer or the like described in Japanese Laid-Open Patent Publication No. Hei 8-193191-78-200911731 can be used. Conductive dendrimers such as molecules. The film thickness of the organic semiconductor layer is not particularly limited, but is preferably 〜1, 〇〇〇nm. (Electron injection/transport layer (electron transporting region)) An electron injecting layer or an electron transporting layer or the like may be provided as the second organic layer between the cathode and the yellow to red light emitting layer. The electron injecting layer or the electron transporting layer is a layer that assists electron injection into the light emitting layer, and the electron mobility is large. The electron injection layer is provided to adjust the energy level in order to alleviate the rapid change of the energy level. The material used for the electron injecting layer or the electron transporting layer is preferably a metal complex of 8-hydroxyquinoline or a derivative thereof, an oxadiazole derivative or a nitrogen-containing heterocyclic derivative. As a specific example of the metal complex of the above 8-hydroxyquinoline or a derivative thereof, a metal chelate compound containing a chelating compound of 〇XINE (normally 8-quinolinol or 8-hydroxyquinoline) can be used. ο X i η 〇 id compound, for example, tris(8-salofolinium)aluminum. Next, the oxadiazole derivative may, for example, be an electron transporting compound represented by the following general formula.

Ar23 —〇— Ar24Ar23 —〇— Ar24

-79- 200911731 式中、Ar17、Ar18、-79- 200911731 Where, Ar17, Ar18,

ArAr

Ar2 i 具有或不具有取代基之芳基,Ar1 2 5Ar2 i aryl with or without a substituent, Ar1 2 5

Ar22與Ar23可互爲相同或相異。a 2| 、Ar〃及表示各自 螂 Ar18、Ar19與 Ar21、 自具有或不具有取代基之伸芳基, 或相異。Ar22 and Ar23 may be identical or different from each other. a 2| , Ar 〃 and represent each 螂 Ar 18 , Ar 19 and Ar 21 , from an extended aryl group with or without a substituent, or different.

Ar23及Ar24表示各Ar23 and Ar24 indicate each

Ar23與Ar24可互爲相同 上述式中芳基,可舉例苯基、聯苯基、蒽基、茈基、 比基等。又’伸芳基’可舉例如苯攆基、萘撐基、聯苯撐 基、蒽撐基、茈撐基、芘撐基等。接著,對此等之取代基 ’可舉例如碳數1〜10之烷基、碳數1〜10之烷氧基或氰基 等。此電子傳遞化合物較佳爲使用薄膜形成性良好者。接 著,此等電子傳遞性化合物之具體例方面,可舉例如下述 者。Ar23 and Ar24 may be mutually the same as the aryl group in the above formula, and examples thereof include a phenyl group, a biphenyl group, a fluorenyl group, a fluorenyl group, a benzyl group, and the like. Further, the aryl group may, for example, be a benzoinyl group, a naphthalene group, a biphenylene group, an anthracene group, an anthracene group or an anthracene group. Next, the substituent '' may, for example, be an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms or a cyano group. The electron transporting compound is preferably one which is excellent in film formability. Next, specific examples of such electron-transporting compounds include the following.

200911731 &amp;下一般式之有機化 〇 Υ一般式之有機化合 例如、含(1 0 1)所示 造之者。 含氮雜環衍生物,可舉例非爲_ 合物所成之金屬錯合物的含氮化合&amp; 含氮雜環衍生物,可舉例非具以 物所成之金屬錯合物的含氮化合物。 骨架之5員環或6員環或式(1〇2)所示擒200911731 &amp;Organization of general formula 〇 ΥGeneral formula of organic compound For example, including (1 0 1). The nitrogen-containing heterocyclic derivative may, for example, be a nitrogen-containing and nitrogen-containing heterocyclic derivative of a metal complex which is not a compound, and may be exemplified by a nitrogen-containing metal complex. Compound. The 5-member ring or the 6-member ring of the skeleton or the formula (1〇2)

* * * (101)* * * (101)

广、X-Ζ1 I、、、NGuang, X-Ζ1 I,,, N

?2 • · · (102) 式中、X爲碳原子或氮原子。21及22各自獨立,表示 可形成含氮雜環之原子群。 N · · · (103) 較佳爲具有5員環或6員環所成之含氮芳香多環族,氮 原子複數個之情況,於具有於不鄰接的鍵結位具有骨架的 有機化合物。進一步,具此般複數氮原子的含氮芳香多環 族的情況’爲具組合上述(1()1)與(1〇2)或(101)與(103)的骨 -81 * 200911731 架之含氮芳香多環有機化合物。 含氮有機化合物之含氮基(HAr)係由以下一般式所表 示之含氮雜環基所選出之含氮雜環衍生物。?2 · · · (102) where X is a carbon atom or a nitrogen atom. 21 and 22 are each independent, indicating that a group of atoms containing a nitrogen-containing hetero ring can be formed. N · · · (103) It is preferably a nitrogen-containing aromatic polycyclic group having a 5-membered ring or a 6-membered ring, and a plurality of nitrogen atoms are present in the case of having an organic compound having a skeleton at a non-adjacent bonding site. Further, the case of a nitrogen-containing aromatic polycyclic group having a plurality of nitrogen atoms is a bone-81*200911731 having a combination of the above (1()1) and (1〇2) or (101) and (103) A nitrogen-containing aromatic polycyclic organic compound. The nitrogen-containing group (HAr) of the nitrogen-containing organic compound is a nitrogen-containing heterocyclic derivative selected from the nitrogen-containing heterocyclic group represented by the following general formula.

-82- 200911731 上述式中、R爲碳數6〜40之芳基、碳數3〜4〇之雜芳 基、碳數1〜20之烷基或碳數1〜20之烷氧基,n爲〇〜5之 整數,η爲2以上之整數時,複數R可互爲相同或相異。 進一步,較佳具體之化合物,如下述一般式所表示之 含氮雜環衍生物。 HAr—L1 Ar1-Ar2 上述式中、HAr爲可具有取代基之碳數3〜40之含氮 雜瓌,L爲單鍵、可具有取代基之碳數6〜4〇之伸芳基或 可具有取代基之碳數3〜40之雜伸芳基,Ar1爲可具有取代 基之碳數6〜40之2價之芳香族烴基,Ar2爲可具有取代基 之碳數6〜40之方基或可具有取代基之碳數3〜40之雜芳棊 〇 又,H A r爲由以下所成之群所選出之含氮雜環衍生牛勿 -83- 200911731-82- 200911731 In the above formula, R is an aryl group having 6 to 40 carbon atoms, a heteroaryl group having 3 to 4 carbon atoms, an alkyl group having 1 to 20 carbon atoms or an alkoxy group having 1 to 20 carbon atoms, n For an integer of 〇~5, when η is an integer of 2 or more, the plural numbers R may be the same or different from each other. Further, a preferred specific compound is a nitrogen-containing heterocyclic derivative represented by the following general formula. HAr—L1 Ar1-Ar2 In the above formula, HAr is a nitrogen-containing heterocyclic group having 3 to 40 carbon atoms which may have a substituent, and L is a single bond, and may have a substituent having a carbon number of 6 to 4 Å. a heterocyclic aryl group having a carbon number of 3 to 40 having a substituent, Ar1 being a divalent aromatic hydrocarbon group having 6 to 40 carbon atoms which may have a substituent, and Ar2 being a carboxyl group having 6 to 40 carbon atoms which may have a substituent Or a heteroaryl group having a carbon number of 3 to 40 which may have a substituent, and HA r is a nitrogen-containing heterocyclic derivative selected from the group formed by the following: -83- 200911731

L爲由以下所成之群所選出之含氮雜環衍生物。L is a nitrogen-containing heterocyclic derivative selected from the group formed below.

Ar2爲以下所成之群所選出之含氮雜環衍生物。 -84- 200911731Ar2 is a nitrogen-containing heterocyclic derivative selected from the group formed below. -84- 200911731

Ar1爲具有以下所表示之芳基蒽基的含氮雜環衍生物Ar1 is a nitrogen-containing heterocyclic derivative having an arylsulfonyl group represented by the following

上述式中、R1〜R14各自獨立,表示氫原子、鹵原子 、碳數1〜20之院基、碳數1〜20之院氧基、碳數6〜40之 芳氧基、可具有取代基之碳數6〜40之芳基或碳數3〜40之 雜芳基,Ar3爲可具有取代基之碳數6〜40之芳基或碳數3 〜4 0之雜芳基。In the above formula, R1 to R14 are each independently and represent a hydrogen atom, a halogen atom, a group having 1 to 20 carbon atoms, a oxy group having 1 to 20 carbon atoms, an aryloxy group having 6 to 40 carbon atoms, and may have a substituent. The aryl group having 6 to 40 carbon atoms or the heteroaryl group having 3 to 40 carbon atoms, and Ar3 is an aryl group having 6 to 40 carbon atoms or a heteroaryl group having 3 to 40 carbon atoms which may have a substituent.

Ar1中,R1〜R8皆爲氫原子之含氮雜環衍生物。 下述式所示之含氮雜環衍生物亦適用作電子注入(輸 送)材。 -85- 200911731In Ar1, all of R1 to R8 are nitrogen-containing heterocyclic derivatives of a hydrogen atom. The nitrogen-containing heterocyclic derivative represented by the following formula is also suitable as an electron injecting (transporting) material. -85- 200911731

• (1A)• (1A)

• (1B) 上述式中、A1〜A3爲氮原子或碳原子,R爲 代基之碳數6〜60之芳基、可具有取代基之碳數] 芳基、碳數1〜20之烷基、碳數1〜20之鹵烷基 20之烷氧基,η爲〇〜5之整數’ η爲2以上之整數 之R可互爲相同或相異。 又,鄰接的複數之R基彼此可相互鍵結,形 未取代之碳環式脂肪族環、或、取代或未取代之 香族環。(1B) In the above formula, A1 to A3 are a nitrogen atom or a carbon atom, R is an aryl group having 6 to 60 carbon atoms, a carbon number which may have a substituent, an aryl group, and an alkyl group having 1 to 20 carbon atoms. The base, the alkoxy group of the haloalkyl group having 1 to 20 carbon atoms, η is an integer of 〇~5', and R, which is an integer of 2 or more, may be the same or different from each other. Further, the adjacent plural R groups may be bonded to each other to form an unsubstituted carbocyclic aliphatic ring, or a substituted or unsubstituted aromatic ring.

Ar1爲可具有取代基之碳數6〜60之芳基、可 基之碳數3〜60之雜芳基,A r2爲氫原子、碳數1 基、碳數1〜20之鹵烷基、碳數1〜20之烷氧基、 代基之碳數6〜60之芳基、可具有取代基之碳數: 芳基。惟,Ar1、Ar2之任一者爲可具有取代基之 60之縮合環基、可具有取代基之碳數3〜60之雜 可具有取 〜6 0之雜 碳數1〜 時,複數 成取代或 碳環式芳 具有取代 〜2 0之烷 可具有取 〜60之雜 碳數1 0〜 縮合環基 -86- 200911731 L 、L2各自爲單鍵、可具有取代基之碳數6〜60之縮 合環、可具有取代基之碳數3〜60之雜縮合環或可具有取 代基之勿撐基(flU〇renylenyl)。 HAr——L1—Ar1-Ar2 上述式中、H Ar爲可具有取代基之碳數3〜40之含氮 雑環’ L1爲單鍵、可具有取代基之碳數6〜6〇之伸芳基、 可具有取代基之碳數3〜60之雜伸芳基或可具有取代基之 勿撐基’ Ar1爲可具有取代基之碳數6〜60之2價之芳香族 烴基,Ar爲可具有取代基之碳數6〜6〇之芳基或可具有取 代基之碳數3〜60之雜芳基。 又,下面之矽環戊二烯衍生物亦適用於電子注入(輸 送)材。Ar1 is an optionally substituted aryl group having 6 to 60 carbon atoms, a heteroaryl group having 3 to 60 carbon atoms, and a hydrogen atom, a carbon number of 1 group, and a haloalkyl group having 1 to 20 carbon atoms. An alkoxy group having 1 to 20 carbon atoms; an aryl group having 6 to 60 carbon atoms; and a carbon number which may have a substituent: an aryl group. However, any of Ar1 and Ar2 may be a condensed cyclic group of 60 which may have a substituent, and a carbon number of 3 to 60 which may have a substituent may have a heteropoly number of 1 to 60, and a plural number is substituted. Or a carbocyclic aromatic having a substituted ~0 0 alkane may have a heterocarbon number of from ~60 to 10 condensed cyclic group -86- 200911731 L, each of L2 is a single bond, and may have a substituent having a carbon number of 6 to 60. a condensed ring, a heterocondensed ring having a carbon number of 3 to 60 which may have a substituent or a fluorenyl group which may have a substituent. HAr——L1-Ar1-Ar2 In the above formula, H Ar is a nitrogen-containing anthracene ring having a carbon number of 3 to 40 which may have a substituent, and L1 is a single bond, and the carbon number which may have a substituent is 6 to 6 Å. a heterocyclic aryl group having 3 to 60 carbon atoms which may have a substituent or a substituent which may have a substituent 'Ar1 is a divalent aromatic hydrocarbon group having 6 to 60 carbon atoms which may have a substituent, and Ar is a An aryl group having 6 to 6 carbon atoms having a substituent or a heteroaryl group having 3 to 60 carbon atoms which may have a substituent. Further, the following indole cyclopentadiene derivative is also suitable for electron injecting (transporting) materials.

式中、X及Y 之烴基、a hydrocarbon group of the formula, X and Y,

、乂及¥各自獨立,爲碳數丨〜6之 6之飽和或不飽和 之烴基、烷氧基、鏈烯基氧基、鏈炔基氧基 或無取代之芳基、取代或無取代之雜環或χ 成飽和或不飽和之環的構造。 、羥基、取代 χ與Υ鍵結形, 乂 and ¥ are each independently, a saturated or unsaturated hydrocarbon group having a carbon number of 66-6, an alkoxy group, an alkenyloxy group, an alkynyloxy group or an unsubstituted aryl group, substituted or unsubstituted. The structure of a heterocyclic ring or a saturated or unsaturated ring. , hydroxy, substituted χ and Υ bond

Ri〜R4各自獨立,氫、鹵、 取代或無取代之碳數1 -87- 200911731 之院基、院氧基、芳氧基、全氟烷基、全氟烷氧基、胺基 、院基擬基、芳基羰基、烷氧基羰基、芳氧基羰基、偶氮 基、焼基羯基氧基、芳基羰基氧基、烷氧基羰基氧基、芳 氧基簾基氧基、亞磺醯基、磺醯基、sulfanyl基、甲矽烷 基、胺甲驢基、芳基、雜環基、鏈烯基、鏈炔基、硝基、 甲酸基、亞硝基、甲醯氧基、異氰基、氰酸酯基、異氰酸 醋基、硫氰酸酯基、異硫氰酸酯基或氰基或在鄰接的情況 爲取代或無取代之環進行縮合之構造。 但,1^1及r4爲苯基時,X及Y不爲烷基及苯基’ Ri 及R4爲噻吩基時,X及γ不爲同時滿足爲一價烴基、R2 及R3爲烷基、芳基、鏈烯基或112與r3鍵結形成環的脂肪 族基之構造,尺4爲甲矽烷基時,R2、R3、X及Y各 自獨立,不爲碳數1〜6之一價烴基或氫原子’在1^及R2苯 環係縮合的構造時,X及Y不爲烷基及苯基。 次式所表示之硼烷衍生物亦適用作電子注入(輸送)材Ri~R4 are each independently hydrogen, halogen, substituted or unsubstituted carbon number 1-87-200911731. Courtyl, alkoxy, aryloxy, perfluoroalkyl, perfluoroalkoxy, amine, hospital Preference group, arylcarbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, azo group, fluorenyl fluorenyloxy group, arylcarbonyloxy group, alkoxycarbonyloxy group, aryloxylcyloxy group, sub Sulfonyl, sulfonyl, sulfanyl, formyl, amidyl, aryl, heterocyclic, alkenyl, alkynyl, nitro, formic, nitroso, methyloxy, An isocyano group, a cyanate group, an isocyanato group, a thiocyanate group, an isothiocyanate group or a cyano group or a structure in which a ring which is substituted or unsubstituted in the case of contiguous is condensed. However, when 1^1 and r4 are a phenyl group, X and Y are not an alkyl group, and when phenyl 'R and R4 are a thienyl group, X and γ are not simultaneously satisfying a monovalent hydrocarbon group, and R2 and R3 are an alkyl group. The structure of an aryl group, an alkenyl group or an aliphatic group in which 112 and r3 are bonded to form a ring, and when the rule 4 is a formyl group, R2, R3, X and Y are each independently, and are not a hydrocarbon group having 1 to 6 carbon atoms. Or a hydrogen atom 'in the structure of the condensation of the 1 and R 2 benzene rings, X and Y are not an alkyl group and a phenyl group. The borane derivative represented by the subtype is also suitable for electron injection (transport)

式中' 及Z2各自獨立,表示氫原子、飽和或 不飽和之烴基、芳香族基、雜環基、取代胺基、取代硼( -88- 200911731 烷)基、烷氧基或芳氧基,\、丫及Z!各自獨立,表示飽 和或不飽和之烴基、芳香族基、雜環基、取代胺基、烷氧 基或芳氧基,2,與Z2之取代基可相互鍵結形成縮合環,η 爲1〜3之整數’ η爲2以上時,Ζι彼此Ζ2彼此可相異。 但’不包含η爲1、Χ、γ及R2爲甲基,且R8爲氫原 子或取代硼(烷)基時,及、η爲3,Z!爲甲基之情形。 又’次式所示之鎵錯合物亦適用爲電子注入(輸送)材Wherein ' and Z2 are each independently and represent a hydrogen atom, a saturated or unsaturated hydrocarbon group, an aromatic group, a heterocyclic group, a substituted amine group, a substituted boron (-88-200911731 alkyl) group, an alkoxy group or an aryloxy group, \, 丫 and Z! are each independently, indicating a saturated or unsaturated hydrocarbon group, an aromatic group, a heterocyclic group, a substituted amino group, an alkoxy group or an aryloxy group, and 2, and the substituents of Z2 may be bonded to each other to form a condensation. In the ring, η is an integer of 1 to 3'. When η is 2 or more, Ζι Ζ 2 can be different from each other. However, the case where η is 1, Χ, γ, and R2 is a methyl group, and R8 is a hydrogen atom or a substituted boron (alkyl) group, and η is 3, and Z is a methyl group. The gallium complex represented by the sub-type is also suitable for electron injection (transport)

Ga—L Q2 y各自獨立,表示下述式所示之 巩屮、y 〜Α Π丨小心虻1H于 ,L表示鹵原子、取 取代或未取代之烷基、取代或未 環烷基、取代或未肋你+ ^ ^ ^ 、_0Rl(Rl爲氤商 t之方基、取代或未取代之雜環基 ’、、〃子、取代或未取代之烷基、取代或未$ 代之環烷基、取代谛士 取代2未取 基)、或―代之芳η 配位子。 )(QS Q4與Ql及㈣同意義)所示之 爲次式所表示之殘基,雖w 2-甲基-8-羥基喹 雖胥8-羥 寺之殘基,但不限於此等 A’1 、\ ' N—Ga—L Q2 y is independent of each other, and represents a group represented by the following formula: y Α Α Π丨 Π丨 虻 1H, L represents a halogen atom, a substituted or unsubstituted alkyl group, a substituted or uncycloalkyl group, a substitution Or not ribbed you + ^ ^ ^, _0Rl (Rl is a ruthenium of t, a substituted or unsubstituted heterocyclic group', a sulfonium, a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic The base, the substituted gentleman replaces the 2 unsubstituted base), or the "substituted aryl group". (QS Q4 and Ql and (4) have the same meanings as the residue represented by the formula, although w 2-methyl-8-hydroxyquino is not a residue of 8-hydroxyl temple, but is not limited to such A '1 , \ ' N—

-89- 200911731 環A1及A2爲相互鍵結的取代或未取代之芳基環或雜 環構造。 上述金屬錯合物作爲η型半導體的性質強、電子注入 能力大。進一步’因錯合物形成時之生成能量亦低,形成 之金屬錯合物之金屬與配位子的鍵結性亦變強固,作爲發 光材料之螢光量子效率亦變大。 在此,形成上述式之配位子的環Α1及Α2之取代基的 具體例,可舉例如氯、溴、碘、氟之鹵原子 '甲基、乙基 、丙基、丁基、sec-丁基、tert-丁基、戊基、己基、庚基 、辛基、硬脂酸基、三氯甲基等之取代或未取代之烷基、 苯基、萘基、3 -甲基苯基、3 -甲氧基苯基、3-氟苯基' 3-三氯甲基苯基、3 -三氟甲基苯基、3 -硝基苯基等之取代或 未取代之芳基、甲氧基、η-丁氧基、tert·丁氧基、二氯甲 氧基、三氟乙氧基、五氟丙氧基、2,2,3,3·四氟丙氧基、 1,1,1,3,3,3-六氟-2-丙氧基' 6-(全氟乙基)己基氧基等之取 代或未取代之烷氧基、苯氧基、硝基苯氧基、p_tert •丁 基苯氧基、3-氟苯氧基、五氟苯基、3_三氟甲基苯氧基等 之取代或未取代之芳氧基、甲基硫基、乙基硫基、tert-丁 基硫基、己基硫基、辛基硫基、二氣甲基硫基等之取代或 未取代之烷基硫基、苯基硫基、p-硝基苯基硫基、p_tert_ 丁基苯基硫基、3 -氟苯基硫基、五氟苯基硫基、3_二氟甲 基苯基硫基等之取代或未取代之方基硫基、氰基、硝基、 胺基、甲基胺基、二乙基胺基、乙基胺基、二甲基胺基、 二丙基胺基、二丁基胺基、二苯基胺基等之單或一取代胺 -90 - 200911731 基、雙(乙醯氧基甲基)胺基、雙(乙醯氧基乙基)胺基、雙 乙醯氧基丙基)胺基、雙(乙醯氧基丁基)胺基等之醯基胺 基、羥基、矽氧基、醯基、甲基胺甲醯基、二甲基胺甲醯 基、乙基胺甲醯基、二乙基胺甲醯基、丙基胺甲醯基、丁 基胺甲醯基、苯基胺甲醯基等之胺甲醯基、羧酸基、磺酸 基、亞胺基、環戊烷基、環己基等之環烷基、苯基、萘基 、聯苯基、蒽基、菲基、芴基、芘基等之芳基、吡啶基、 吡嗪基、嘧啶基、噠嗪基、三嗪基、吲哚啉基、唾啉基、 吖啶基、吡咯烷基、二唑基、哌啶基、嗎啉基、哌嗪基、 咔唑基、呋喃基、硫苯基、噁唑啉基、噁二唑基、苯並噁 唑啉基、噻唑基、噻二唑基、苯並噻唑基、三唑基、咪唑 基、苯並咪唑基等之雜環基等。又,以上之取代基彼此可 再鍵結形成6員芳基環或雜環。 另外,特開平9-3448記載的下者,可舉例滿足前述元 件構成條件的有機化合物。 R! X2-89- 200911731 Rings A1 and A2 are mutually substituted or unsubstituted aryl ring or heterocyclic structures. The above metal complex has high properties as an n-type semiconductor and has a large electron injecting ability. Further, the energy generated by the formation of the complex compound is also low, and the bond between the metal of the formed metal complex and the ligand is also strengthened, and the fluorescence quantum efficiency as the light-emitting material also becomes large. Here, specific examples of the substituent of the ring Α1 and Α2 forming the ligand of the above formula include, for example, a halogen atom of a chlorine, a bromine, an iodine or a fluorine, a methyl group, an ethyl group, a propyl group, a butyl group, and a sec- Substituted or unsubstituted alkyl, phenyl, naphthyl, 3-methylphenyl, butyl, tert-butyl, pentyl, hexyl, heptyl, octyl, stearic acid, trichloromethyl, etc. a substituted or unsubstituted aryl group of 3-methoxyphenyl, 3-fluorophenyl '3-trichloromethylphenyl, 3-trifluoromethylphenyl, 3-nitrophenyl, etc. Oxy, η-butoxy, tert. butoxy, dichloromethoxy, trifluoroethoxy, pentafluoropropoxy, 2,2,3,3·tetrafluoropropoxy, 1,1 a substituted or unsubstituted alkoxy group, a phenoxy group, a nitrophenoxy group, a 1,3,3,3-hexafluoro-2-propoxy '6-(perfluoroethyl)hexyloxy group, etc. P_tert • substituted or unsubstituted aryloxy group, methylthio group, ethylthio group, such as butylphenoxy, 3-fluorophenoxy, pentafluorophenyl, 3-trifluoromethylphenoxy, etc. Substituted or unsubstituted alkylthio, phenylsulfide, tert-butylthio, hexylthio, octylthio, dimethylthio Substituted or unsubstituted, p-nitrophenylthio, p_tert_butylphenylthio, 3-fluorophenylthio, pentafluorophenylthio, 3-difluoromethylphenylthio, etc. Square thio, cyano, nitro, amine, methylamino, diethylamino, ethylamino, dimethylamino, dipropylamino, dibutylamino, diphenyl Mono- or monosubstituted amines of the amino group, etc. -90 - 200911731, bis(ethyloxymethyl)amino, bis(ethyloxyethyl)amino, bisethoxypropyl propyl) a mercaptoamine group, a hydroxy group, a decyloxy group, a decyl group, a methylamine carbaryl group, a dimethylamine carbhydryl group, an ethylamine carbhydryl group, a bis(acetoxybutyl)amino group, or the like. Aminomercapto, carboxylic acid, sulfonic acid, imido, cyclopentane, etc. of diethylamine, mercaptomethyl, propylamine, mercaptomethyl, phenylamine, mercapto or the like a cyclyl group such as a cycloalkyl group, a phenyl group, a naphthyl group, a biphenyl group, a fluorenyl group, a phenanthryl group, a fluorenyl group or a fluorenyl group, a pyridyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, or the like. Triazinyl, porphyrinyl, sialolinyl, acridinyl, pyrrolidinyl, Azyl, piperidinyl, morpholinyl, piperazinyl, oxazolyl, furyl, thiophenyl, oxazolinyl, oxadiazolyl, benzoxazolinyl, thiazolyl, thiadiazolyl a heterocyclic group such as a benzothiazolyl group, a triazolyl group, an imidazolyl group or a benzimidazolyl group. Further, the above substituents may be bonded to each other to form a 6-membered aryl ring or a heterocyclic ring. Further, in the following description of JP-A-9-3448, an organic compound which satisfies the above constitutional conditions can be exemplified. R! X2

X1 式中、R,〜R4各自獨立 ’表不氫原子、取代或未取代 之脂肪族基、 、取代或未取代之脂肪族式環基、取代或未取 芳香族環基、取代或未取代之雜環基,Χι、X: 表示氧原子、硫黃原子或二氰亞甲基。 代之碳環式芳香族環基、 各自獨立, Χι ' x2 -91 - 200911731 特開2000- 1 73 774記載之下者’可舉例如滿足前述元 件構成條件的有機化合物。Wherein X, R, R4 are each independently 'existing a hydrogen atom, a substituted or unsubstituted aliphatic group, a substituted or unsubstituted aliphatic cyclic group, a substituted or unsubstituted aromatic ring group, a substituted or unsubstituted group The heterocyclic group, Χι, X: represents an oxygen atom, a sulfur atom or a dicyanomethylene group. The carbon-cyclic aromatic ring group is replaced by an organic compound which satisfies the above-described constitutional conditions, for example, as described in JP-A-2000-172-200911731.

但,上述一般式中,Ri、R2、R3及R4互爲相同或相 異之基,爲下述一般式所表示之芳基。However, in the above general formula, Ri, R2, R3 and R4 are the same or different groups, and are aryl groups represented by the following general formula.

但,上述一般式中’ R5 ' R6、R7、尺8及r9互爲相同或 相異之基,爲氫原子、或彼等之至少1個係飽和或不飽和 烷氧基、烷基、胺基或烷基胺基。 進一步,亦可爲含該含氮雜環基或含氮雜環衍生物的 高分子化合物。 電子注入層或電子輸送層之膜厚雖無特別限制,較佳 爲 1 〜1 0 0 nm。 與陽極最近的有機層即第一發光層或第一之有機層以 含氧化劑爲佳。適宜含於第一發光層或第一之有機層的氧 化劑爲電子吸引性或電子接受體。較佳爲路易士酸、各種 -92- 200911731 醌衍生物、二氰蓖嗦二甲烷衍生物、芳香族胺與路易士酸 所形成之鹽類。特別佳之路易士酸爲氯化鐵、氯化銻、氯 化鋁等。 離陰極最近之有機層即發光層或第二之有機層以含還 原劑爲佳。較佳之還原劑爲以鹼金屬、鹼土類金屬、鹼金 屬氧化物、鹼土類氧化物、稀土類氧化物、鹼金屬鹵化物 、鹼土類鹵化物、稀土類鹵化物、鹼金屬與芳香族化合物 所形成之錯合物。特別佳之鹼金屬爲C s、L i、N a、K。 有機EL元件之較佳之形態爲於輸送電子的領域或陰 極與有機層之界面領域,具有含還原性摻雜劑之元件。在 此,還原性摻雜劑定義爲可使電子輸送性化合物還原的物 質。而’爲具一定還原性者即可,可使用各種物質,例如 適合使用鹼金屬、鹼土類金屬、稀土類金屬、鹼金屬之氧 化物、鹼金屬之鹵化物、鹼土類金屬之氧化物、鹼土類金 屬之鹵化物、稀土類金屬之氧化物或稀土類金屬之鹵化物 、鹼金屬之有機錯合物、鹼土類金屬之有機錯合物、稀土 類金屬之有機錯合物所成之群所選出之少一種的物質。 又,更具體地’較佳之還原性摻雜劑,可舉例如L i ( 功函數:2_9eV)、Na(功函數:2.36eV)、K(功函數: 2.28eV)、Rb(功函數:2.16eV)及 Cs(功函數:l_95eV)所 成之群所選出之至少1個的鹼金屬、或Ca(功函數·· 2.9eV) 、Sr(功函數:2.0〜2.5eV)、及Ba(功函數:2.52eV)所成 之群所選出之至少1個的鹼土類金屬,功函數以2.9eV以 下者特別佳。此等之中,更佳之還原性摻雜劑爲由K、R b -93- 200911731 及Cs所成之群所選出之至少1個的鹼金屬,又更佳爲Rb 或Cs’最佳的爲Cs。此等之鹼金屬特別係還原能力高, 藉由對電子注入域比較的少量的添加,可達到有機E L元 件中發光亮度提升或長壽命化。又,功函數2.9eV以下之 還原性摻雜劑,亦可組合此等2種以上之鹼金屬,特別係 含Cs之組合,以例如、Cs與Na、Cs與K、Cs與Rb或 C s與N a與K之組合爲佳。藉由含C s組合,可有效發揮 還原能力’藉由對電子注入域的添加,可達到有機E L元 件中發光亮度提升或長壽命化。 於陰極與有機層之間亦可進一步設置以絶緣體或半導 體構成之電子注入層。此時,可有效防止電流洩漏,提升 電子注入性。此般絶緣體以使用鹼金屬硫屬化物、鹼土類 金屬硫屬化物、鹼金屬之鹵化物及鹼土類金屬之鹵化物所 成之群所選出之至少1個的金屬化合物爲佳。電子注入層 若以此等之鹼金屬硫屬化物等構成,可進一步提高電子注 入性之觀點來看爲佳。具體上,較佳之鹼金屬硫屬化物, 例如、Li2〇、K20、Na2S、Na2Se 及 Na20,較佳之驗土類 金屬硫屬化物,例如、CaO、BaO、SrO、BeO、BaS、及 CaSe。又,較佳之鹼金屬之鹵化物,例如、LiF、NaF、 KF、LiCl、KC1及NaCl等。又,較佳之鹼土類金屬之鹵 化物,例如、C a F 2、B a F 2、S r F 2、M g F 2及B e F 2之氟化物 、或氟化物以外之鹵化物。 又,構成電子輸送層之半導體,可舉如含Ba、Ca、 Sr、Yb、A1、Ga、Iη、Li、Na、Cd、Mg、S i、Ta、Sb 及 -94- 200911731However, in the above general formula, 'R5' R6, R7, uldent 8 and r9 are the same or different groups, and are a hydrogen atom, or at least one of them, a saturated or unsaturated alkoxy group, an alkyl group, an amine. Base or alkylamine group. Further, it may be a polymer compound containing the nitrogen-containing heterocyclic group or the nitrogen-containing heterocyclic derivative. The film thickness of the electron injecting layer or the electron transporting layer is not particularly limited, but is preferably 1 to 1 0 0 nm. The organic layer closest to the anode, i.e., the first luminescent layer or the first organic layer, preferably contains an oxidizing agent. The oxidizing agent suitable for the first luminescent layer or the first organic layer is an electron attracting or electron accepting body. Preferred are Lewis acid, various -92-200911731 anthracene derivatives, dicyandiimethane derivatives, salts of aromatic amines and Lewis acids. Particularly good Lewis acids are ferric chloride, barium chloride, aluminum chloride and the like. The organic layer closest to the cathode, i.e., the luminescent layer or the second organic layer, preferably contains a reducing agent. Preferred reducing agents are alkali metals, alkaline earth metals, alkali metal oxides, alkaline earth oxides, rare earth oxides, alkali metal halides, alkaline earth halides, rare earth halides, alkali metals and aromatic compounds. The complex formed. Particularly preferred alkali metals are C s, L i, N a, K. A preferred form of the organic EL element is an element having a reducing dopant in the field of transporting electrons or the interface between the cathode and the organic layer. Here, the reducing dopant is defined as a substance which can reduce the electron transporting compound. And 'for a certain reduction, you can use various substances, such as alkali metal, alkaline earth metal, rare earth metal, alkali metal oxide, alkali metal halide, alkaline earth metal oxide, alkaline earth. a metal halide, a rare earth metal oxide or a rare earth metal halide, an alkali metal organic complex, an alkaline earth metal organic complex, and an organic complex of a rare earth metal Choose one of the lesser substances. Further, more specifically, preferred reductive dopants include, for example, L i (work function: 2-9 eV), Na (work function: 2.36 eV), K (work function: 2.28 eV), and Rb (work function: 2.16). At least one alkali metal selected from the group formed by eV) and Cs (work function: l_95eV), or Ca (work function · 2.9 eV), Sr (work function: 2.0 to 2.5 eV), and Ba (work) Function: 2.52 eV) At least one alkaline earth metal selected from the group formed, and the work function is particularly preferably 2.9 eV or less. Among these, a more preferable reducing dopant is at least one alkali metal selected from the group consisting of K, R b -93- 200911731 and Cs, and more preferably Rb or Cs' is Cs. These alkali metals are particularly high in reducing ability, and a small amount of addition to the electron injecting region can achieve an increase in luminance or a long life of the organic EL element. Further, a reducing dopant having a work function of 2.9 eV or less may be a combination of two or more kinds of alkali metals, particularly a combination of Cs, for example, Cs and Na, Cs and K, Cs and Rb or Cs. It is better to combine with N a and K. By using a combination of C s , the reduction ability can be effectively achieved. By adding the electron injection region, the luminance of the organic EL element can be improved or the lifetime can be extended. An electron injecting layer composed of an insulator or a semiconductor may be further disposed between the cathode and the organic layer. At this time, current leakage can be effectively prevented and electron injectability can be improved. As the insulator, at least one metal compound selected from the group consisting of an alkali metal chalcogenide, an alkaline earth metal chalcogenide, an alkali metal halide, and an alkaline earth metal halide is preferably used. The electron injecting layer is preferably composed of an alkali metal chalcogenide or the like, and can further improve electron injectability. Specifically, preferred alkali metal chalcogenides are, for example, Li2, K20, Na2S, Na2Se and Na20, preferably soil-like metal chalcogenides such as CaO, BaO, SrO, BeO, BaS, and CaSe. Further, preferred halides of alkali metals are, for example, LiF, NaF, KF, LiCl, KC1 and NaCl. Further, a preferred halide of an alkaline earth metal, for example, a fluoride of C a F 2, B a F 2, S r F 2, M g F 2 and B e F 2 , or a halide other than a fluoride. Further, the semiconductor constituting the electron transport layer may include Ba, Ca, Sr, Yb, A1, Ga, Iη, Li, Na, Cd, Mg, S i, Ta, Sb, and -94-200911731.

Zn之至少1個的元素的氧化物、氮化物或氧化氮化物等之 1種單獨或2種以上之組合。又,構成電子輸送層之無機化 合物以微結晶或非晶質之絶緣性薄膜爲佳。電子輸送層若 以此等之絶緣性薄膜構成,因形成更均質之薄膜,可減少 暗點(DARK SPOT)等之像素缺陷。又,此般無機化合物, 可舉例如上述鹼金屬硫屬化物、鹼土類金屬硫屬化物、鹼 金屬之鹵化物及鹼土類金屬之鹵化物等。 (陰極) 陰極,爲使電子注入電子注入•輸送層或發光層,可 使用功函數小的(4 e V以下)金屬、合金、電傳導性化合物 及此等之混合物作爲電極物質者。此般電極物質之具體例 方面,如鈉、鈉·鉀合金、鎂、鋰、鎂·銀合金、銘/氧化 鋁、鋁·鋰合金、銦、稀土類金屬等。 此陰極可藉由使此等之電極物質經由蒸鍍或濺鍍等之 方法形成薄膜而製作。 在此,使來自發光層之發光由陰極取出時,對陰極發 光之透過率以大於10%爲佳。 又,作爲陰極之薄膜電阻以數百Ω/□以下爲佳,膜 厚通常爲l〇nm〜Ιμηι、較佳爲50〜200nm。 (絶緣層) 有機EL元件因對超薄膜外加電場,易因洩漏或短路 而產生像素缺陷。爲防止此狀況,以在一對電極間插入絶 -95- 200911731 緣性薄膜層爲佳。 絶緣層所用之材料,例如氧化鋁、氟化鋰、氧化鋰、 氟化铈、氧化鈽、氧化鎂、氟化鎂、氧化鈣、氟化鈣、氮 化鋁、氧化鈦、氧化矽、氧化鍺、氮化矽、氮化硼、氧化 鉬、氧化釕、氧化釩等。 亦可使用此等之混合物或層合物。 〔有機EL元件之製造方法〕 接著’說明有關有機EL元件之製造方法。 藉由以上例示之材料及形成方法,形成陽極、發光層 、因應必要的電洞注入層、及因應必要的電子注入層,進 一步藉由形成陰極而製作有機EL元件。又可從陰極至陽 極、或與前述相反順序製作有機E L元件。 以下、記載於透光性基板上依陽極/電洞注入層/發光 層/電子注入層/陰極順序設置構成之有機EL元件之製作 例。 首先於適當透光性基板上,以使陽極材料所成之薄膜 爲Ιμιη以下、較佳爲10〜200nm之範圍膜厚之方式,經蒸 鍍或濺鍍等之方法形成而製作陽極。 接著於此陽極上設置電洞注入層。 電涧注入層之形成可經由真空蒸鍍法、旋轉塗佈法、 澆鑄法、LB法等之方法進行。膜厚在5nm〜5μΐΏ之範圍適 宜選擇爲佳。 接著,於電洞注入層上設置發光層之形成可經由使用 -96- 200911731 所期望之有機發光材料藉由真空蒸鍍法爲代表之乾製程或 旋轉塗佈法、澆鑄法等之濕製程,使有機發光材料薄膜化 而形成。 接著,於此發光層上設置電子注入層。 以經真空蒸鍍法形成爲例。 最後層合陰極可得有機EL元件。 陰極爲由金屬所構成,可使用蒸鍍法、濺鍍。 但爲保護底層之有機物層不在製膜時損傷以真空蒸鍍 法爲佳。 有機EL元件之各層之形成方法未特別限制。 可使用以往公知之真空蒸鍍法、旋轉塗佈法等的形成 方法,即,有機薄膜層可藉由真空蒸鍍法、分子線蒸鍍法 (MB E法)或溶解於溶劑之溶液的浸漬法、旋轉塗佈法、鑄 造法、棒塗法、輥塗法、噴墨法等之塗佈法的公知之方法 來形成。 有機EL元件之各有機層之膜厚雖無特別限制,一般 膜厚過薄,則易生針孔等之缺陷,相反地過厚,則變得需 要高外加電壓,效率變差,故通常以數nm〜Ιμιη範圍爲 佳。 又,於有機EL元件外加直流電壓時,以陽極爲+、 陰極爲-的極性,外加5〜40V之電壓,則可觀察到發光。 又’就算以相反極性外加電壓亦無電流流動,完全不發光 。進一步外加交流電壓時’只有陽極爲+、陰極爲-之極性 時觀測到均一發光。外加交流之波形可爲任意。 -97 - 200911731 【實施方式】 [實施例] 接者’說明有關本發明之實施例。 〔化合物之合成〕 首先’說明有關實施例試料製作所用之化合物之合成 (1)化合物1之合成 化合物1之合成遵循下述流程圖來實施。One or a combination of two or more kinds of oxides, nitrides, or oxynitrides of at least one element of Zn. Further, the inorganic compound constituting the electron transport layer is preferably a microcrystalline or amorphous insulating film. When the electron transport layer is formed of such an insulating film, a more uniform film can be formed, and pixel defects such as dark spots (DARK SPOT) can be reduced. Further, examples of the inorganic compound include the above-mentioned alkali metal chalcogenide, alkaline earth metal chalcogenide, alkali metal halide, and alkaline earth metal halide. (Cathode) Cathode, in order to inject electrons into the electron injecting/transporting layer or the light-emitting layer, a metal having a small work function (4 e V or less), an alloy, an electrically conductive compound, or a mixture thereof may be used as the electrode material. Specific examples of the electrode material include sodium, sodium potassium alloy, magnesium, lithium, magnesium, silver alloy, aluminum oxide, aluminum lithium alloy, indium, and rare earth metal. This cathode can be produced by forming such a thin film by vapor deposition, sputtering or the like. Here, when the light emitted from the light-emitting layer is taken out from the cathode, the transmittance to the cathode is preferably greater than 10%. Further, the film resistance of the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually from 10 nm to Ι μηι, preferably from 50 to 200 nm. (Insulating Layer) Since the organic EL element has an electric field applied to the ultrathin film, it is liable to cause pixel defects due to leakage or short circuit. In order to prevent this, it is preferable to insert a rim-95-200911731 edge film layer between a pair of electrodes. Materials used for the insulating layer, such as alumina, lithium fluoride, lithium oxide, barium fluoride, barium oxide, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, aluminum nitride, titanium oxide, barium oxide, barium oxide , tantalum nitride, boron nitride, molybdenum oxide, antimony oxide, vanadium oxide, and the like. Mixtures or laminates of these may also be used. [Manufacturing Method of Organic EL Element] Next, a method of manufacturing the organic EL element will be described. By the materials and the formation methods exemplified above, an anode, a light-emitting layer, a necessary hole injection layer, and an electron injection layer necessary for the formation of the cathode are used to form an organic EL element. Further, an organic EL element can be fabricated from the cathode to the anode or in the reverse order of the foregoing. In the following, an example of the production of an organic EL device having a structure in which an anode/hole injection layer/light-emitting layer/electron injection layer/cathode is sequentially disposed on a light-transmitting substrate is described. First, an anode is formed by vapor deposition or sputtering on a suitable light-transmissive substrate so that the film formed of the anode material has a film thickness of Ιμηη or less, preferably 10 to 200 nm. A hole injection layer is then provided on the anode. The formation of the electrodeposited layer can be carried out by a method such as a vacuum deposition method, a spin coating method, a casting method, or an LB method. A film thickness of 5 nm to 5 μM is preferably selected. Then, the formation of the light-emitting layer on the hole injection layer can be performed by a wet process such as a dry process or a spin coating method or a casting method represented by a vacuum evaporation method using an organic light-emitting material desired by -96-200911731. The organic light-emitting material is formed by thinning. Next, an electron injecting layer is provided on the light emitting layer. The formation by vacuum evaporation is taken as an example. Finally, the organic EL element can be obtained by laminating the cathode. The cathode is made of a metal, and a vapor deposition method or sputtering can be used. However, in order to protect the underlying organic layer from damage during film formation, vacuum evaporation is preferred. The method of forming each layer of the organic EL element is not particularly limited. A conventionally known method of forming a vacuum deposition method, a spin coating method, or the like, that is, the organic thin film layer can be impregnated by a vacuum deposition method, a molecular vapor deposition method (MB E method), or a solution dissolved in a solvent. A known method such as a coating method such as a method, a spin coating method, a casting method, a bar coating method, a roll coating method, or an inkjet method is used. The film thickness of each organic layer of the organic EL element is not particularly limited. Generally, when the film thickness is too small, defects such as pinholes are likely to occur, and if it is too thick, a high applied voltage is required, and efficiency is deteriorated. A range of several nm ~ Ι μιη is preferred. Further, when a DC voltage is applied to the organic EL element, light is observed by applying a voltage of 5 to 40 V with the anode being + and the cathode being -. Moreover, even if the voltage is applied in the opposite polarity, no current flows, and no light is emitted at all. When the AC voltage is further applied, uniform light emission is observed only when the anode is + and the cathode is -. The waveform of the external communication can be arbitrary. -97 - 200911731 [Embodiment] [Embodiment] The following describes an embodiment of the present invention. [Synthesis of Compound] First, the synthesis of the compound used in the preparation of the sample of the example was described. (1) Synthesis of Compound 1 The synthesis of Compound 1 was carried out in accordance with the following scheme.

NBS DMFNBS DMF

tolueneToluene

(1-1)6-溴窟之合成 於窟22.8g( lOOmmol)之DMF1L溶液中力卩入N-溴琥珀 醯亞胺17.8g(100mmol)之DMFlOOmL溶液,在室溫攪拌20 小時。反應完畢後,於水2 L中加入反應溶液,濾取析出 -98- 200911731 之結晶。使得到之固體以水、甲醇、己烷依順洗淨,在減 壓下乾燥,得到6 -溴窟2 8.5 g (收率9 3 %)。 (1-2)6-(2-萘基)窟之合成 氬環境下、於6-溴窟6.14g(20.0mm〇l)、2-萘硼酸 4.1 0g(24.0mmol)、四(三苯基膦)鈀(0)0.462g(0.400mmol) 中加入 DME80mL、2M碳酸鈉水溶液40mL,進行16小時 加熱迴流。 反應完畢後,濾取析出晶,將所得到之結晶以水、甲 醇、己烷進行洗淨。使所得到之固體以甲苯進行再結晶, 得到6-(2-萘基)®4.25g(收率60%)。 (1-3)6-溴-12-(2-萘基)窟之合成 於 6 -溴窟 4.25g(12.0mmol)之 DMFlOOmL 溶液加入 N-溴琥珀醯亞胺2.56g(14.4mm〇l)之DMFlOmL溶液’在室溫 攪拌2 0小時。反應完畢後,於水2 0 0 m L加入反應溶液,濾 取析出之結晶。使得到之固體以水、甲醇、己烷依順洗淨 ,在減壓下乾燥,得到6-溴-12-(2-萘基)窟4.68g(收率90%) (1 - 4 )化合物1之合成 氬環境下、於6-溴-12-(2-萘基)窟4.33g(10_0mmol)、 1_ 萘硼酸 2.06g(12_0mmol)、四(三苯基膦)鈀(〇)〇.231g (0.200mmol)添加DME40mL、2M碳酸鈉水溶液20mL’進 -99- 200911731 行1 6小時加熱迴流。 反應完畢後’濾取析出晶’使所得到之結晶以水、甲 醇、已烷進行洗淨。使所得到之固體以甲苯進行再結晶, 得到白色結晶2.8 8g。此物經質譜分析結果,爲目的物’ 對分子量480.19而言’ m/e = 480。 (2)化合物2之合成 化合物2之合成遵循下述流程圖來實施。(1-1) Synthesis of 6-bromine crater A solution of 17.8 g (100 mmol) of N-bromosuccinimide in DMF1L solution of 22.8 g (100 mmol) was stirred and stirred at room temperature for 20 hours. After completion of the reaction, the reaction solution was added to 2 L of water, and the crystals of -98 to 200911731 were collected by filtration. The obtained solid was washed with water, methanol and hexane, and dried under reduced pressure to give 6 - bromine 2 8.5 g (yield 93%). (1-2) 6-(2-naphthyl) crater in the argon environment, 6.14g (20.0mm〇l) at 6-bromine, 2.10g (24.0mmol) of 2-naphthaleneboronic acid, tetrakis(triphenyl) Palladium (0) 0.462 g (0.400 mmol) 40 mL of DME and 2 mL of a 2M aqueous sodium carbonate solution were added, and the mixture was heated under reflux for 16 hours. After completion of the reaction, precipitated crystals were collected by filtration, and the obtained crystals were washed with water, methanol and hexane. The obtained solid was recrystallized from toluene to give 4-(2-naphthyl)® 4.25 g (yield: 60%). (1-3) Synthesis of 6-bromo-12-(2-naphthyl) Grottoes In a solution of 4.25 g (12.0 mmol) of DMF 100 mL of 6-bromine broth, N-bromoammonium imine 2.56 g (14.4 mm 〇l) was added. The DMF 10 mL solution was stirred at room temperature for 20 hours. After completion of the reaction, the reaction solution was added to 200 ml of water, and the precipitated crystals were filtered. The obtained solid was washed with water, methanol and hexane, and dried under reduced pressure to give 6.68 g (yield: 90%) (1 - 4 ) compound of 6-bromo-12-(2-naphthyl). In a synthetic argon atmosphere, 4.33g (10_0mmol) at 6-bromo-12-(2-naphthyl), 2.06g (12_0mmol) of 1-naphthaleneboronic acid, tetrakis(triphenylphosphine)palladium(〇)〇.231g (0.200 mmol) DME 40 mL, 2M sodium carbonate aqueous solution 20 mL 'in-99-200911731 was added and heated under reflux for 16 hours. After the completion of the reaction, the precipitated crystals were collected by filtration, and the obtained crystals were washed with water, methanol and hexane. The obtained solid was recrystallized from toluene to obtain 2.8 g of white crystals. The result of mass spectrometry was found to be the target 'm/e = 480 for molecular weight 480.19. (2) Synthesis of Compound 2 The synthesis of Compound 2 was carried out in accordance with the following scheme.

NBS -- DMFNBS -- DMF

tolueneToluene

(2-1)2-(4-溴苯基)萘之合成 氬環境下、於4 -溴碘苯WOgUdlmol)、2 -萘硼酸 243g( 1.41mol)、四(三苯基膦)鈀(〇)32.7g(28.2mmol)加入 甲苯6.4L、2M碳酸鈉水溶液3.2L,進行17小時加熱迴流 〇 反應完畢後,過濾,除去水層。將有機層以水進行洗 淨,以硫酸鎂乾燥後’將甲苯減壓餾去。將殘渣以矽膠管 -100- 200911731 柱層析純化,得到2 - (4 -溴苯基)萘3 0 3 g (收率7 6 % )。 (2-2 )4-(2-萘基)苯基硼酸之合成 氬環境下、於2-(4 -溴苯基)萘212g(748mol)加入無水 THF 3L,在-10°C、攪拌中,添加1 .6M η-丁基鋰之己烷溶 液600mL( 948mmol)。使反應溶液邊加溫至〇°C邊攪拌2小 時。使反應溶液再冷卻至-78 °C爲止,滴下硼酸三異丙酯 450g(2.39mol)。使反應溶液在室溫攪拌1 7小時。加入水 500mL、甲苯3L,進行1小時攪拌後、除去水層。將有機 層以硫酸鎂乾燥,使溶劑減壓餾去。使所得到之固體以己 烷洗淨,得到4-(2-萘基)苯基硼酸I26g(收率67%)。 (2-3)化合物2之合成 化合物1之合成中,取代萘硼酸,使用4-(2-萘基)苯 基硼酸以同樣方法合成。此物經質譜分析結果,爲目的物 ,對分子量556.22而目’〇1/6=556。 (3)化合物3之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量556·22 而言,m/e=556 。 -101 - 200911731(2-1) Synthesis of 2-(4-bromophenyl)naphthalene in argon atmosphere, 4-bromoiodobenzene (WOgUdlmol), 2-naphthaleneboronic acid 243g (1.41 mol), tetrakis(triphenylphosphine)palladium (〇) 32.7 g (28.2 mmol), 3.2 L of toluene and 3.2 L of a 2 M sodium carbonate aqueous solution were added, and the mixture was heated and refluxed for 17 hours. After completion of the reaction, the mixture was filtered and the aqueous layer was removed. The organic layer was washed with water and dried over magnesium sulfate. The residue was purified by column chromatography on silica gel - 100 - 200911731 to give 2-(4-bromophenyl)naphthalene 3 0 3 g (yield 76%). (2-2) Synthesis of 4-(2-naphthyl)phenylboronic acid in an argon atmosphere, adding 212 g (748 mol) of 2-(4-bromophenyl)naphthalene to anhydrous THF, stirring at -10 °C 600 mL (948 mmol) of a 1.6 M η-butyllithium hexane solution was added. The reaction solution was stirred while stirring to 〇 ° C for 2 hours. The reaction solution was further cooled to -78 ° C, and 450 g (2.39 mol) of triisopropyl borate was added dropwise. The reaction solution was stirred at room temperature for 17 hours. 500 mL of water and 3 L of toluene were added, and after stirring for 1 hour, the aqueous layer was removed. The organic layer was dried over magnesium sulfate, and the solvent was evaporated. The obtained solid was washed with hexane to obtain 4-(2-naphthyl)phenylboronic acid I26 g (yield: 67%). (2-3) Synthesis of Compound 2 In the synthesis of Compound 1, a substituted naphthalene boronic acid was synthesized in the same manner using 4-(2-naphthyl)phenylboronic acid. This product was analyzed by mass spectrometry and found to be the target, with a molecular weight of 556.22 and a target of 〇 1 / 6 = 556. (3) Synthesis of Compound 3 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry and found to be the target. For molecular weight 556·22, m/e = 556. -101 - 200911731

tolueneToluene

(4)化合物4之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.22 而言,m/e=556。(4) Synthesis of Compound 4 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry to give the object, m/e = 556 for molecular weight 5 5 6.22.

(5 )化合物5之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 -102- 200911731 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.22 而言,m/e = 556 o(5) Synthesis of Compound 5 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. -102-200911731. This product was analyzed by mass spectrometry and was the target. For molecular weight 5 5 6.22, m/e = 556 o

(6 )化合物6之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e=506°(6) Synthesis of Compound 6 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. The result of mass spectrometry analysis is the target product, m/e=506° for the molecular weight of 5 0 6.2 0

-103- 200911731 (7 )化合物7之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e=506o-103- 200911731 (7) Synthesis of Compound 7 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. This product is analyzed by mass spectrometry and is the target. For the molecular weight of 5 0 6.2 0, m/e = 506o

NBS DMFNBS DMF

(8 )化合物8之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e=506。 -104- 200911731(8) Synthesis of Compound 8 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. This product was analyzed by mass spectrometry and found to be the object. For molecular weight 5 0 6.2 0 , m/e = 506. -104- 200911731

NBS DMFNBS DMF

toluene (9 )化合物9之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 3 0.2 0 而言,111/6 = 530 0Toluene (9) Synthesis of Compound 9 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. This product was analyzed by mass spectrometry and was the target. For molecular weight 5 3 0.2 0 , 111/6 = 530 0

tolueneToluene

b(〇h)2b(〇h)2

toluene (1 〇)化合物1 〇之合成 -105- 200911731 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.2 2 而言,m/e = 556。Synthesis of toluene (1 〇) Compound 1 〇 -105- 200911731 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by following the following scheme. This product was analyzed by mass spectrometry as the target, m/e = 556 for a molecular weight of 5 5 6.2 2 .

b(oh)2b(oh)2

tolueneToluene

(1 1)化合物1 1之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.22 而言,m/e=556。(1 1) Synthesis of Compound 1 1 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry to give the object, m/e = 556 for molecular weight 5 5 6.22.

NBS DMFNBS DMF

b(〇h)2b(〇h)2

tolueneToluene

toluene -106- 200911731 (1 2 )化合物1 2之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.2 2 而言,m/e = 556 〇Toluene -106- 200911731 (1 2 ) Synthesis of Compound 1 2 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry and was the target. For molecular weight 5 5 6.2 2 , m/e = 556 〇

b(oh)2b(oh)2

tolueneToluene

toluene (13)化合物13之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 5 6.22 而言,m/e=556。 -107- 200911731Toluene (13) Synthesis of Compound 13 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry to give the object, m/e = 556 for molecular weight 5 5 6.22. -107- 200911731

B(OH)2B(OH)2

tolueneToluene

toluene (1 4 )化合物1 4之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e=506。Toluene (1 4 ) Synthesis of Compound 1 4 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. This product was analyzed by mass spectrometry and found to be the object. For molecular weight 5 0 6.2 0 , m/e = 506.

b(〇h)2b(〇h)2

tolueneToluene

toluene (1 5 )化合物1 5之合成 -108 - 200911731 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e 二 5 06。Toluene (1 5 ) Synthesis of Compound 1 5 -108 - 200911731 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by following the following scheme. This product was analyzed by mass spectrometry and found to be the target. For the molecular weight of 5 0 6.2 0 , m/e 2 5 06.

B(OH)2B(OH)2

tolueneToluene

_2bhO^Q -3 Pd(PPh3)4 Na2C03aq toluene_2bhO^Q -3 Pd(PPh3)4 Na2C03aq toluene

(1 6 )化合物1 6之合成 遵循下述流程圖,與化合物1之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量5 0 6.2 0 而言,m/e=506。 -109- 200911731(1 6 ) Synthesis of Compound 16 The synthesis was carried out in the same manner as in the synthesis of Compound 1 by the following scheme. This product was analyzed by mass spectrometry and found to be the object. For molecular weight 5 0 6.2 0 , m/e = 506. -109- 200911731

NBS DMFNBS DMF

(17)化合物17之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 合成。此物經質譜分析結果,爲目的物,對分子量6 3 2.2 5 而言,m/e = 632。(17) Synthesis of Compound 17 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry as the target, m/e = 632 for a molecular weight of 6 3 2.2 5 .

(1 8 )化合物1 8之合成 遵循下述流程圖,與化合物2之合成同樣之方法進行 -110- 200911731 合成。此物經質譜分析結果,爲目的物,對分子量63 2.2 5 而言,m/e = 632。(1 8 ) Synthesis of Compound 18 The synthesis was carried out in the same manner as in the synthesis of Compound 2 by the following scheme. This product was analyzed by mass spectrometry as the target, m/e = 632 for molecular weight 63 2.2 5 .

NBS DMFNBS DMF

toluene (1 9)化合物1 9之合成 化合物1 9之合成遵循下述流程圖來實施。 111 - 200911731Toluene (1 9) Synthesis of Compound 19 The synthesis of Compound 1 9 was carried out following the following scheme. 111 - 200911731

(Issopd 〇J1 ε(ά;!〇ω(Issopd 〇J1 ε(ά;!〇ω

(19-1)2-溴-6-苯基萘之合成 氬環境下,加入6-溴-2-萘基三氟甲烷磺酸酯1195 g( 3.37mol)、1,3-雙(二苯基膦)丙烷鈀(0)二氯化物(19-1) 2-bromo-6-phenylnaphthalene in the presence of argon, adding 6-bromo-2-naphthyltrifluoromethanesulfonate 1195 g (3.37 mol), 1,3-bis(diphenyl) Palladium (propane) palladium (0) dichloride

99.3g(168mmol)、脫水二乙基醚4L於燒杯中,冷卻至0°C -112- 200911731 。滴下1 Μ苯基鎂溴化物之THF溶液4.1 L,在室溫攪拌22 小時。加入甲苯2L、水2L後,進行過濾。將濾液之有機 層以硫酸鎂乾燥後、使溶劑減壓餾去。將殘渣以甲苯進行 漿料洗淨(s 1 u r r y w a s h i n g),濾取結晶。使結晶在減壓下乾 燥,得到2-溴-6-苯基萘3 60g(收率3 8%)。 (19-2)6-苯基萘-2-硼酸之合成 氬環境下、加入2-溴-6-苯基萘3 60g(l_27mol)、脫水 二乙基醚2L、脫水甲苯2L,冷卻至-10°C。滴下1.58M n-丁基鋰之己烷溶液1L(1 .58mol),於-1 〇°C攪拌5小時。令反 應溶液冷卻至-60°C,滴下硼酸三異丙酯718g(3.81mol)後 ,於室溫攪拌1 7小時。於反應溶液加入水1 L、甲苯1 L, 攪拌1小時後,將水層除去。將有機層以水進行洗淨,以 硫酸鎂乾燥。使有機層濃縮後,以甲苯進行熱洗淨,得到 6-苯基萘-2-硼酸276g(收率87%)。 (19-3)3-甲醯_4_羥基聯苯基之合成 氬環境下、加入5 -溴水楊醛496g(2.46mol)、苯基硼酸 361g(2.96mol)、四(三苯基膦)鈀(0)57g(49.〇mniol)、 DME8.6L、碳酸鈉784g/水3.7L,進行1 7小時加熱迴流、 攪拌。冷卻至室溫後,加入甲苯3 L,除去水層。將有機層 以水進行洗淨’以硫酸鎂乾燥,將溶劑減壓餾去。將結晶 以矽膠管柱層析進行純化,得到3 -甲醯-4 -羥基聯苯基 382g(收率 78%)。 200911731 (19-4)3-甲醯-4-聯苯基三氟甲烷磺酸酯之合成 氬環境下、加入3-甲醯-4-羥基聯苯基3 82g(1.93mol) 、二異丙基胺390g(3.85mol)、脫水二氯甲院4L,滴下無 水三氟甲烷磺酸l〇88g(3.85mol),在室溫,攪拌21小時。 添加碳酸氫鈉1 〇 〇 g/水3 L後、除去水層。將有機層以水洗 淨後,以硫酸鎂乾燥、使溶劑減壓餾去。將殘渣以矽膠管 柱層析純化,得到3 -甲醯-4 -聯苯基三氟甲烷磺酸酯之粗 生成物6 5 6 g。 (19-5)2-(3-甲醯聯苯基-4-基)-6-苯基萘之合成 氬環境下、加入3 -甲醯-4-聯苯基三氟甲烷磺酸酯 444g(l.llmol)、苯基硼酸276g(1.33mol)、四(三苯基膦)鈀 (0)26g(22.2mmo〇、甲苯 5L、碳酸鈉 3 54g/水 1.7L,進行 17 小時加熱迴流攪拌。冷卻至室溫後,除去水層,將有機層 以水洗淨。以硫酸鎂乾燥、使溶劑減壓餾去。以甲苯-丙 酮洗淨,得到2-(3-甲醯聯苯基-4-基)-6-苯基萘3 70g(收率 8 6%) ° (19-6)2-[3-[(2-甲氧基)乙烯基-1-基]聯苯基-4-基]-6-苯基萘之合 成 氬環境下、加入(甲氧基甲基)三苯基氯化膦823 g( 2.40mol)、脫水二乙基醚4L於燒杯中,添加1M鉀-t-丁氧 基之THF溶液2.4L(2.40mol),在室溫,攪拌2小時。滴下 -114- 20091173199.3 g (168 mmol) and dehydrated diethyl ether 4L were placed in a beaker and cooled to 0 ° C -112 - 200911731. A solution of 1 Μ phenyl magnesium bromide in THF (4.1 L) was added dropwise and stirred at room temperature for 22 hours. After adding 2 L of toluene and 2 L of water, it was filtered. After the organic layer of the filtrate was dried over magnesium sulfate, the solvent was evaporated under reduced pressure. The residue was washed with toluene (s 1 u r r y w a s h i n g), and the crystals were collected by filtration. The crystals were dried under reduced pressure to give 2-bromo-6-phenylnaphthalene (yield: 8%). (19-2) Synthesis of 6-phenylnaphthalene-2-boronic acid Under the argon atmosphere, add 2-bromo-6-phenylnaphthalene 3 60 g (1-27 mol), dehydrated diethyl ether 2 L, dehydrated toluene 2 L, and cooled to - 10 ° C. 1 L (1.58 mol) of 1.58 M n-butyllithium in hexane was added dropwise, and stirred at -1 ° C for 5 hours. The reaction solution was cooled to -60 ° C, and 718 g (3.81 mol) of triisopropyl borate was added dropwise, followed by stirring at room temperature for 17 hours. 1 L of water and 1 L of toluene were added to the reaction solution, and the mixture was stirred for 1 hour, and then the aqueous layer was removed. The organic layer was washed with water and dried over magnesium sulfate. After concentrating the organic layer, it was washed with toluene to obtain 276 g of 6-phenylnaphthalene-2-boronic acid (yield: 87%). (19-3) Synthesis of 3-methylhydrazine_4_hydroxybiphenyl in argon, adding 496 g (2.46 mol) of 5-bromo salicylaldehyde, 361 g (2.96 mol) of phenylboric acid, and tetrakis(triphenylphosphine) Palladium (0) 57 g (49. 〇mniol), DME 8.6 L, sodium carbonate 784 g / water 3.7 L, heated under reflux for 17 hours, and stirred. After cooling to room temperature, 3 L of toluene was added to remove the aqueous layer. The organic layer was washed with water and dried over magnesium sulfate. The crystals were purified by silica gel column chromatography to give 382 g (yield: 78%) of 3-carbazin-4-hydroxybiphenyl. 200911731 (19-4) Synthesis of 3-methylindole-4-biphenyltrifluoromethanesulfonate in the argon atmosphere, adding 3-methylindole-4-hydroxybiphenyl 3 82g (1.93mol), diisopropyl 390 g (3.85 mol) of alkylamine, 4 L of dehydrated dichloromethane, and 88 g (3.85 mol) of anhydrous trifluoromethanesulfonic acid were added dropwise, and the mixture was stirred at room temperature for 21 hours. After adding sodium hydrogencarbonate 1 〇 〇 g / water 3 L, the aqueous layer was removed. The organic layer was washed with water, dried over magnesium sulfate and evaporated. The residue was purified by silica gel column chromatography toield of crude product of 6-carbazol-4-diphenyltrifluoromethanesulfonate (65 g). (19-5) 2-(3-Methylbiphenyl-4-yl)-6-phenylnaphthalene was synthesized under the argon atmosphere, and 3-butyrene-4-biphenyltrifluoromethanesulfonate 444g was added. (l.llmol), phenylboronic acid 276g (1.33mol), tetrakis(triphenylphosphine)palladium(0)26g (22.2mmo〇, toluene 5L, sodium carbonate 3 54g/water 1.7L, heated for 17 hours under reflux After cooling to room temperature, the aqueous layer was removed, and the organic layer was washed with water, dried over magnesium sulfate, and the solvent was evaporated under reduced pressure and washed with toluene-acetone to give 2-(3-methylbiphenyl)- 4-yl)-6-phenylnaphthalene 3 70 g (yield 8 6%) ° (19-6) 2-[3-[(2-methoxy)vinyl-1-yl]biphenyl-4 Synthesis of -6-phenylnaphthalene under argon, adding (methoxymethyl)triphenylphosphonium chloride 823 g (2.40 mol), dehydrated diethyl ether 4L in a beaker, adding 1 M potassium- T-butoxy THF solution 2.4 L (2.40 mol), stirred at room temperature for 2 hours. Drop -114- 200911731

2-(3 -甲醯聯苯基-4-基)-6 -苯基萘370g(961mm〇l)之THF6L 分散液,在室溫,攪拌1 7小時。反應後、濾出不溶物’濃 縮濾液。將殘渣以矽膠管柱層析純化’得到2-[3·[(2-甲氧 基)乙烯基-1-基]聯苯基-4-基]-6-苯基萘3 3 0g(收率83%)。 (19-7)2,8-二苯基窟之合成 加入2-[3-[(2 -甲氧基)乙烯基-1-基]聯苯基_4_基]—6-苯 基萘 330g(800mmol)、甲烷磺酸 60g(624mmol)、脫水二氯 甲烷4 · 5 L,在室溫,攪拌1 8小時。加入甲醇1 L,爐取析出 之結晶。使所得到之結晶以甲醇洗淨,得到2,8 -二苯基 窟 2 4 0 g (收率 7 8 %)。 (19-8)化合物19之合成 化合物1之合成中,取代窟’使用2,8_二苯基窟’以同 樣方法進行合成。此物經質譜分析結果’爲目的物’對分 子量 63 2.25 而言,1114 = 63 2。 (20)化合物20之合成 遵循下述流程圖,以與化合物3之合成同樣方法進行 合成。此物經質譜分析結果,爲目的物,對分子量70 8 ·2 8 而言,m/e=708 。 -115- 200911731A THF 6L dispersion of 2-(3-methylbiphenyl-4-yl)-6-phenylnaphthalene 370 g (961 mm) was stirred at room temperature for 17 hours. After the reaction, the insoluble matter was concentrated to concentrate the filtrate. The residue was purified by silica gel column chromatography to give 2-[3·[(2-methoxy)vinyl-1-yl]biphenyl-4-yl]-6-phenylnaphthalene 3 3 0 g (received Rate 83%). Synthesis of (19-7) 2,8-diphenyl crater by adding 2-[3-[(2-methoxy)vinyl-1-yl]biphenyl-4-yl]-6-phenylnaphthalene 330 g (800 mmol), methanesulfonic acid 60 g (624 mmol), and dehydrated dichloromethane 4·5 L were stirred at room temperature for 18 hours. 1 L of methanol was added, and the precipitated crystals were taken. The obtained crystal was washed with methanol to obtain 2,8-diphenyl broth (40%) (yield 78%). (19-8) Synthesis of Compound 19 In the synthesis of Compound 1, the synthesis was carried out in the same manner as in the case of using 2,8-diphenyl crater. The mass spectrometry result of this material was 'target'. For molecular weight 63 2.25, 1114 = 63 2 . (20) Synthesis of Compound 20 The synthesis was carried out in the same manner as in the synthesis of Compound 3 by the following scheme. This product was analyzed by mass spectrometry and found to be the target. For molecular weight 70 8 · 2 8 , m/e = 708. -115- 200911731

(21)化合物21之合成 化合物2 1之合成遵循下述流程圖來實施。 -116 - 200911731 cslxoa.(21) Synthesis of Compound 21 The synthesis of Compound 2 1 was carried out in accordance with the following scheme. -116 - 200911731 cslxoa.

nnffl-u ί =\ro(」d!o)aNnffl-u ί =\ro("d!o)a

Jg6s i—Jg6s i—

=\addp)zopd=\addp)zopd

(21-1)2-萘基-12-苯基窟之合成 遵循上述流程圖,以與化合物1 9之合成同樣方法進行 -117- 200911731 合成。 (21-2)6,12-二溴-2-萘基-12-苯基窟之合成 於2-萘基-12-苯基窟43.〇g(l〇〇mmol)之DMF1L溶液加 入N-溴琥珀醯亞胺53.4g(3 00mmol)之DMF3 00mL溶液’ 在60°C攪拌2〇小時。反應完畢後,於水2L中加入反應溶 液,濾取析出之結晶。使得到之固體以水、甲醇、己烷依 順洗淨,在減壓下乾燥,得到6-溴窟50.2g(收率85%)。 (21-3)化合物21之合成 氬環境下、於6,12-二溴-2-萘基-12-苯基窟5.88g( l〇_〇mm〇l)、2-萘硼酸 4.12g(24.0mmol)、四(三苯基隣)鈀 (〇)〇_462g( 0.400mmol)中加入甲苯8〇mL、2M碳酸鈉水溶 液4OmL ’進行1 6小時力Π熱迴流。反應完畢後,濾取析出 晶’所得到之結晶以水、甲醇、己烷進行洗淨。所得到之 固體以甲苯進行再結晶,得到白色結晶2.8 8 g。此物經質 言'曰'分析結果’爲目的物,對分子量682.27而言,m/e = 682 [言式料之組成〕 接著,說明有關試料之組成。 (實施例1) 將25mmx75mmxl.imm厚之附有IT〇透明電極(陽極) -118- 200911731 之玻璃基板(Geomatec公司製)在異丙基醇中進彳了超首波洗 淨5分鐘後,進行UV臭氧洗淨30分鐘。將洗淨後之附透 明電極線之玻璃基板安裝於真空蒸鍍裝置之基板保持架, 首先於形成有透明電極線側的面上,以被覆前述透明電極 之方式成膜膜厚75nm之下述化合物A-1。 進一步,於此A-1膜上以膜厚40nm使本發明之化合 物1與下述化合物D-1以40: 2之膜厚比而成膜,爲藍色系 發光層。化合物1作爲主體材料、D-1作爲摻雜劑。 於此膜上,作爲電子輸送層以膜厚20nm使下述構造 的Alq蒸鍍而成膜。之後,使LiF以膜厚lnm成膜。於此 LiF膜上,使金屬A1蒸鍍爲150nm,形成金屬陰極而形成 有機EL元件。(21-1) Synthesis of 2-naphthyl-12-phenyl sulphate Following the above-mentioned scheme, the synthesis was carried out in the same manner as in the synthesis of the compound -19-117-200911731. (21-2) Synthesis of 6,12-dibromo-2-naphthyl-12-phenyl porphyrin in 2-naphthyl-12-phenyl crater 43.〇g (l〇〇mmol) in DMF1L solution was added to N - bromide amber imine 53.4 g (300 mmol) in DMF3 00 mL solution' was stirred at 60 ° C for 2 hours. After completion of the reaction, a reaction solution was added to 2 L of water, and the precipitated crystals were collected by filtration. The obtained solid was washed with water, methanol and hexane, and dried under reduced pressure to obtain 50.2 g (yield: 85%) of 6-bromo. (21-3) Synthesis of Compound 21 in an argon atmosphere at 6,12-dibromo-2-naphthalenyl-12-phenyl crater 5.88 g (l〇_〇mm〇l), 2-naphthalene boronic acid 4.12 g ( 24.0 mmol), tetrakis(triphenyl)palladium (〇)〇_462g (0.400 mmol), 8 mL of toluene and 4O mL of 2M sodium carbonate aqueous solution were added, and the mixture was refluxed for 16 hours. After the completion of the reaction, the crystal obtained by the filtration of the precipitated crystals was washed with water, methanol and hexane. The obtained solid was recrystallized from toluene to give white crystals 2.8 g. This product is the target of the '曰' analysis result. For the molecular weight of 682.27, m/e = 682 [composition of the phrase] Next, the composition of the sample is explained. (Example 1) A glass substrate (manufactured by Geomatec Co., Ltd.) having an IT〇 transparent electrode (anode) -118-200911731, which was attached to a thickness of 25 mm x 75 mm x 1.0 mm, was washed in isopropyl alcohol for 5 minutes after the first wave was washed. Wash with UV ozone for 30 minutes. The glass substrate with the transparent electrode wire after the cleaning is attached to the substrate holder of the vacuum vapor deposition apparatus, and the film thickness of 75 nm is formed by coating the transparent electrode on the surface on the side where the transparent electrode line is formed. Compound A-1. Further, on the A-1 film, the compound 1 of the present invention and the following compound D-1 were formed into a film having a thickness of 40 nm at a film thickness ratio of 40:2 to form a blue light-emitting layer. Compound 1 was used as a host material and D-1 was used as a dopant. On the film, Alq was deposited as a film having a thickness of 20 nm as the electron transport layer. Thereafter, LiF was formed into a film at a film thickness of 1 nm. On the LiF film, the metal A1 was vapor-deposited to 150 nm to form a metal cathode to form an organic EL device.

-119 - 200911731 (實施例2) 實施例1中,取代化合物1,而使用化合物2以同樣方 法製作有機EL元件。 (實施例3) 實施例1中,取代化合物1,而使用化合物3以同樣方 法製作有機EL元件。 (實施例4) 實施例1中’取代化合物1,而使用化合物4以同樣方 法製作有機EL元件。 (實施例5) 實施例1中,取代化合物1,而使用化合物5以同樣方 法製作有機EL元件。 (實施例6) 實施例1中’取代化合物1,而使用化合物6以同樣方 法製作有機EL元件。 (實施例7) 實施例1中’取代化合物1,而使用化合物7以同樣方 法製作有機EL元件。 -120- 200911731 (實施例8) 實施例1中,取代化合物1,而使用化合物8以同樣方 法製作有機EL元件。 (實施例9) 實施例1中’取代化合物1,而使用化合物9以同樣方 法製作有機EL元件。 (實施例10) 實施例1中’取代化合物1,而使用化合物1 〇以同樣方 法製作有機EL元件。 (實施例1 1) 實施例1中,取代化合物1,而使用化合物1 1以同樣方 法製作有機EL元件。 (實施例12) 實施例1中,取代化合物1 ’而使用化合物i 2以同樣方 法製作有機EL元件。 (實施例13) 實施例1中’取代化合物1 ’而使用化合物1 3以同樣方 法製作有機EL元件。 -121 - 200911731 (實施例1 4) 實施例1中,取代化合物1,而使用化合物1 4以同樣方 法製作有機EL元件。 (實施例15) 實施例1中,取代化合物1,而使用化合物1 5以同樣方 法製作有機EL元件。 (實施例16) 實施例1中,取代化合物1,而使用化合物1 6以同樣方 法製作有機EL元件。 (實施例17) 實施例1中,取代化合物1,而使用化合物1 7以同樣方 法製作有機EL元件》 (實施例18) 實施例1中,取代化合物1,而使用化合物1 8以同樣方 法製作有機EL元件。 (實施例19) 實施例1中,取代化合物1,而使用化合物1 9以同樣方 法製作有機EL元件。 -122- 200911731 (實施例2〇) 實施例1中,取代化合物1,而使用化合物20以同樣方 法製作有機EL元件。 (實施例2 1) 實施例1中,取代化合物1,而使用化合物2 1以同樣方 法製作有機EL元件。 (比較例1) 實施例1中,取代化合物1,而使用下述化合物A以 同樣方法製作有機EL元件。-119 - 200911731 (Example 2) In Example 1, an organic EL device was produced in the same manner by using Compound 2 instead of Compound 1. (Example 3) In Example 1, an organic EL device was produced in the same manner by using Compound 3 instead of Compound 1. (Example 4) In the example 1, the compound 1 was substituted, and the organic EL device was produced in the same manner using the compound 4. (Example 5) In Example 1, an organic EL device was produced in the same manner by using Compound 5 instead of Compound 1. (Example 6) In the example 1, the compound 1 was substituted, and the organic EL device was produced in the same manner using the compound 6. (Example 7) In the example 1, the compound 1 was substituted, and the organic EL device was produced in the same manner using the compound 7. -120-200911731 (Example 8) In Example 1, an organic EL device was produced in the same manner by using Compound 8 instead of Compound 1. (Example 9) In the example 1, the compound 1 was substituted, and the organic EL device was produced in the same manner using the compound 9. (Example 10) In the example 1, the compound 1 was substituted, and the organic EL device was produced in the same manner using the compound 1 oxime. (Example 1 1) In Example 1, an organic EL device was produced in the same manner by using the compound 1 1 instead of the compound 1. (Example 12) In Example 1, an organic EL device was produced in the same manner by using the compound i 2 instead of the compound 1 '. (Example 13) An organic EL device was produced in the same manner as in Example 1 by substituting the compound 1 '. -121 - 200911731 (Example 1 4) In Example 1, an organic EL device was produced in the same manner by using the compound 1 4 instead of the compound 1. (Example 15) In Example 1, an organic EL device was produced in the same manner as in the compound 1 except that the compound 1 was used. (Example 16) In Example 1, an organic EL device was produced in the same manner as in the compound 1 except that the compound 1 was used. (Example 17) In Example 1, an organic EL device was produced in the same manner as in the case of the compound 1 by using the compound 1 (Example 18). In the example 1, the compound 1 was used, and the compound 1 was used in the same manner. Organic EL element. (Example 19) In Example 1, an organic EL device was produced in the same manner as in the compound 1 except that the compound 1 was used. -122-200911731 (Example 2) In Example 1, an organic EL device was produced in the same manner by using Compound 20 instead of Compound 1. (Example 2 1) In Example 1, an organic EL device was produced in the same manner by using the compound 2 1 instead of the compound 1. (Comparative Example 1) In Example 1, an organic EL device was produced in the same manner as in the case of Substituting Compound 1, using the following Compound A.

(比較例2) 實施例1中’取代化合物1,而使用上述化合物B以同 樣方法製作有機EL元件。 (比較例3) -123- 200911731 合物C以同 實施例1中,取代化合物1,而使用上述化 樣方法製作有機EL元件。 〔評估方法〕 接著,說明有關評估方法。 1 EL元件 ’即外部量 半衰期。此 有關上述實施例1〜21、比較例1〜3之有 ,測定電流密度l〇mA/cm2驅動時的元件性能 子收率、發光波長、及、初期亮度100cd/m2之 等之結果如表1所示。 -124- 200911731 [表i] 主體材料 摻雜劑材料 外部量子收率 發光波長 (mm) 壽命 塒間) 實施例1 1 D-1 3.9 424 10000 實施例2 2 D-1 3.9 424 10000 實施例3 3 D-1 3.9 424 10000 實施例4 4 D-1 3.9 424 13000 實施例5 5 D-1 3.9 424 12000 實施例6 6 D-1 3.9 424 12000 實施例7 7 D-1 3.9 424 10000 實施例8 8 D-1 3.9 424 10000 實施例9 9 D-1 3.9 424 10000 實施例10 10 D-1 3.9 424 10000 實施例11 11 D-1 3.9 424 10000 實施例12 12 D-1 3.9 424 13000 實施例13 13 D-1 3.9 424 13000 實施例14 14 D-1 3.9 424 12000 實施例15 15 D-1 3.9 424 10000 實施例16 16 D-1 3.9 424 10000 實施例17 17 D-1 3.9 424 11000 實施例18 18 D-1 3.9 424 13000 實施例19 19 D-1 3.9 424 12000 實施例20 20 D-1 3.9 424 12000 實施例21 21 D-1 3.9 424 12000 比較例1 A D-1 3.9 424 7000 比較例2 B D-1 3.9 424 7000 比較例3 C D-1 3.9 424 7000 〔評估結果〕 如表1所示般,關於外部量子收率,可確認實施例1〜 21及比較例1〜3無大差異。 -125- 200911731 又,有關發光波長,可確認實施例1〜2 1及比較例1〜 3無大差異。 進一步’有關壽命,可確認實施例1〜2 1變得比比較 例1〜3長。又,由實施例4、5、6、12、13、14、18,具 間苯撐基的窟衍生物與其他相比較,特別長壽命。進一步 ,藉由於蒽的2,8位導入取代基亦可長壽命化。藉由使化 合物非對稱化,有非晶性提升,長壽命化之傾向,進一步 ,於窟衍生物導入此等特異的構造,可更抑制結晶化,可 長壽命化。 亦即,藉由使用本發明之構成的發光層,確認可得到 容易達到長壽命化的有機EL元件。 (實施例22) 將25mmx75mmxl.lmm厚之附有ITO透明電極(陽極) 之玻璃基板(Geomatec公司製)在異丙基醇中進行超音波洗 淨5分鐘後,進行UV臭氧洗淨30分鐘。將洗淨後之附透 明電極線之玻璃基板安裝於真空蒸鍍裝置之基板保持架, 首先於形成有透明電極線側的面上,以被覆前述透明電極 之方式成膜膜厚75nm之下述化合物A-1。 進一步,於A · 1膜上,以膜厚4 0 nm使本發明之化合 物1與下述化合物D-2以40: 2之膜厚比成膜,爲藍色系發 光層。化合物1爲主體材料、D - 2爲摻雜劑。 於此膜上作爲電子輸送層’以膜厚2 Onm使下述構造 之E-1經蒸鍍而成膜。之後,將LiF以膜厚inm進行成膜 -126- 200911731 。於此LiF膜上,使金屬Al、150nm蒸鍍,形成金屬陰 極,而形成有機EL元件。(Comparative Example 2) An organic EL device was produced in the same manner as in Example 1 except that Compound 1 was substituted. (Comparative Example 3) -123- 200911731 Compound C In the same manner as in Example 1, substituting Compound 1, an organic EL device was produced by the above-described method. [Evaluation Method] Next, the evaluation method will be described. 1 EL element ’ is the external half-life. In the above-mentioned Examples 1 to 21 and Comparative Examples 1 to 3, the results of measuring the element performance sub-product, the emission wavelength, and the initial luminance of 100 cd/m 2 at the time of driving the current density of 10 mA/cm 2 are shown in the table. 1 is shown. -124- 200911731 [Table i] Host material dopant material External quantum yield Luminescence wavelength (mm) Lifetime period) Example 1 1 D-1 3.9 424 10000 Example 2 2 D-1 3.9 424 10000 Example 3 3 D-1 3.9 424 10000 Example 4 4 D-1 3.9 424 13000 Example 5 5 D-1 3.9 424 12000 Example 6 6 D-1 3.9 424 12000 Example 7 7 D-1 3.9 424 10000 Example 8 8 D-1 3.9 424 10000 Example 9 9 D-1 3.9 424 10000 Example 10 10 D-1 3.9 424 10000 Example 11 11 D-1 3.9 424 10000 Example 12 12 D-1 3.9 424 13000 Example 13 13 D-1 3.9 424 13000 Example 14 14 D-1 3.9 424 12000 Example 15 15 D-1 3.9 424 10000 Example 16 16 D-1 3.9 424 10000 Example 17 17 D-1 3.9 424 11000 Example 18 18 D-1 3.9 424 13000 Example 19 19 D-1 3.9 424 12000 Example 20 20 D-1 3.9 424 12000 Example 21 21 D-1 3.9 424 12000 Comparative Example 1 A D-1 3.9 424 7000 Comparative Example 2 B D-1 3.9 424 7000 Comparative Example 3 C D-1 3.9 424 7000 [Evaluation Result] As shown in Table 1, examples 1 to 21 and Comparative Example 1 were confirmed regarding the external quantum yield. 3 no big difference. Further, regarding the emission wavelength, it was confirmed that there was no significant difference between Examples 1 to 2 1 and Comparative Examples 1 to 3. Further, regarding the lifespan, it was confirmed that Examples 1 to 2 1 were longer than Comparative Examples 1 to 3. Further, from Examples 4, 5, 6, 12, 13, 14, and 18, the inter-phenylene-based cave derivatives have a particularly long life compared with others. Further, the introduction of a substituent at the 2,8 position of ruthenium can also extend the life. By asymmetry of the compound, the amorphous property is increased, and the life is prolonged. Further, by introducing such a specific structure into the cave derivative, crystallization can be further suppressed and the life can be extended. In other words, it has been confirmed that an organic EL device which can easily achieve a long life can be obtained by using the light-emitting layer of the constitution of the present invention. (Example 22) A glass substrate (manufactured by Geomatec Co., Ltd.) having an ITO transparent electrode (anode) of 25 mm x 75 mm x 1 mm thick was subjected to ultrasonic cleaning in isopropyl alcohol for 5 minutes, and then subjected to UV ozone washing for 30 minutes. The glass substrate with the transparent electrode wire after the cleaning is attached to the substrate holder of the vacuum vapor deposition apparatus, and the film thickness of 75 nm is formed by coating the transparent electrode on the surface on the side where the transparent electrode line is formed. Compound A-1. Further, on the A·1 film, the compound 1 of the present invention and the following compound D-2 were formed into a film at a film thickness ratio of 40:2 at a film thickness of 40 nm to form a blue light-emitting layer. Compound 1 is a host material and D-2 is a dopant. On the film, E-1 of the following structure was deposited as an electron transport layer as a film thickness of 2 Onm. Thereafter, LiF was deposited at a film thickness of inm -126-200911731. On the LiF film, metal Al and 150 nm were vapor-deposited to form a metal cathode, thereby forming an organic EL device.

(實施例23〜42) 實施例1中,取代化合物1,而使用化合物2〜23以同 樣方法製作有機EL元件。 (比較例4〜6 ) 比較例1〜3中,取代化合物1,而使用下述化合物A 〜C,以同樣方法製作出有機E L元件。 〔評估方法〕 關於實施例2 2〜4 2、比較例4〜6之有機E L元件,測 -127- 200911731 定電流密度l〇mA/Cm2驅動時之元件性能之外部量子收率 、發光波長、及、初期亮度l〇〇cd/m2之半衰期。此等之結 果如表2所示。 [表2] 主體材料 摻雜劑材料 發光效率 cd/A 發光波長 (mm) 壽命 (時間) 實施例22 1 D-2 5.1 450 6000 實施例23 2 D-2 5.1 450 6000 實施例24 3 D-2 5.1 450 6000 實施例25 4 D-2 5.1 450 13000 實施例26 5 D-2 5.2 450 12000 實施例27 6 D-2 5.2 450 12000 實施例28 7 D-2 5.1 450 6000 實施例29 8 D-2 5.1 450 6000 實施例30 9 D-2 5.2 450 6000 實施例31 10 D-2 5.2 450 6000 實施例32 11 D-2 5.1 450 6000 實施例33 12 D-2 5.1 450 13000 實施例34 13 D-2 5.1 450 13000 實施例35 14 D-2 5.1 450 12000 實施例36 15 D-2 5.1 450 6000 實施例37 16 D-2 5.1 450 6000 實施例38 17 D-2 6.0 450 11000 實施例39 18 D-2 6.0 450 13000 實施例40 19 D-2 5.2 450 12000 實施例41 20 D-2 5.1 450 1000 實施例42 21 D-2 5.1 450 1000 比較例4 A D-2 4.5 450 4000 比較例5 B D-2 4.5 450 4000 比較例6 C D-2 4.5 450 4000 -128- 200911731 〔評估結果〕 由以上,可明確知道具有間苯撐基骨架的材料比其他 系統更長壽命。認爲係爲了提升蒸鍍膜的非晶性。又,具 有二苯基窟骨架的材料認爲可特別的提高發光效率提高。 -129-(Examples 23 to 42) In Example 1, an organic EL device was produced in the same manner as in the compound 2 to 23 by substituting the compound 1. (Comparative Examples 4 to 6) In Comparative Examples 1 to 3, an organic EL element was produced in the same manner by substituting the compound 1 and using the following compounds A to C. [Evaluation method] Example 2 2 to 4 2, Organic EL elements of Comparative Examples 4 to 6, measured -127-200911731 External quantum yield, luminescence wavelength, and elemental performance at a constant current density of 10 mA/cm 2 And the initial half-life of the brightness l〇〇cd/m2. The results of these are shown in Table 2. [Table 2] host material dopant material luminous efficiency cd/A emission wavelength (mm) lifetime (time) Example 22 1 D-2 5.1 450 6000 Example 23 2 D-2 5.1 450 6000 Example 24 3 D- 2 5.1 450 6000 Example 25 4 D-2 5.1 450 13000 Example 26 5 D-2 5.2 450 12000 Example 27 6 D-2 5.2 450 12000 Example 28 7 D-2 5.1 450 6000 Example 29 8 D- 2 5.1 450 6000 Example 30 9 D-2 5.2 450 6000 Example 31 10 D-2 5.2 450 6000 Example 32 11 D-2 5.1 450 6000 Example 33 12 D-2 5.1 450 13000 Example 34 13 D- 2 5.1 450 13000 Example 35 14 D-2 5.1 450 12000 Example 36 15 D-2 5.1 450 6000 Example 37 16 D-2 5.1 450 6000 Example 38 17 D-2 6.0 450 11000 Example 39 18 D- 2 6.0 450 13000 Example 40 19 D-2 5.2 450 12000 Example 41 20 D-2 5.1 450 1000 Example 42 21 D-2 5.1 450 1000 Comparative Example 4 A D-2 4.5 450 4000 Comparative Example 5 B D- 2 4.5 450 4000 Comparative Example 6 C D-2 4.5 450 4000 -128- 200911731 [Evaluation Results] From the above, it is clear that materials with a metaphenylene skeleton have a longer life than other systems.It is considered to enhance the amorphous state of the deposited film. Further, a material having a diphenyl cave skeleton is considered to particularly improve the luminous efficiency. -129-

Claims (1)

200911731 十、申請專利範圍 1 ·—種窟衍生物,其特徵係以下述一般式(1)所表示,200911731 X. Patent application scope 1 ·—The species of caves, characterized by the following general formula (1), 〜般式(1)中,Ar1、Ar2各自獨立,表示核碳數6〜14 之取代或無取代的芳基以單獨或複數的組合所構成之取代 基’丨隹,ArVAr2,Ar1、Ar2不含蒽,R1〜R1G表示氫原子 或取代基,惟,不包含Arl爲無取代卩萘基時,Α,爲無取 代苯基、無取代聯苯基、4_甲基取代苯基、4_(1_萘基)苯 基-1·基及α萘基之情況。 2·如申請專利範圍第1項之窟衍生物,其中, Ar係取代或無取代之萘、取代或無取代之菲,且 Ar'iAr2。 3.〜種贿生物,其特徵係以下述-般式(2)所表示, -130- (2) 200911731In the general formula (1), Ar1 and Ar2 are each independently, and the substituted or unsubstituted aryl group having a carbon number of 6 to 14 is a substituent composed of a single or a combination of plural 'ArVAr2, Ar1 and Ar2. Containing ruthenium, R1 to R1G represent a hydrogen atom or a substituent, but, when Arl is an unsubstituted fluorenylnaphthyl group, oxime is an unsubstituted phenyl group, an unsubstituted biphenyl group, a 4-methyl substituted phenyl group, 4_( The case of 1_naphthyl)phenyl-1·yl and α-naphthyl. 2. The cave derivative of claim 1, wherein the Ar is substituted or unsubstituted naphthalene, substituted or unsubstituted phenanthrene, and Ar'iAr2. 3. ~ The species of bribes, characterized by the following general formula (2), -130- (2) 200911731 一般式(2)中,Ar3係取代或無取代之萘、取代或無取 代之菲,Ar4表示核碳數6〜14之取代或無取代的芳基以單 獨或複數的組合所構成之取代基,Rl〜rm表示氫原子或 取代基’ k爲1〜4之整數,又,k爲2以上時,R11彼此可 相同或相異’又’除了 Ar3爲無取代β萘基時,Ar4爲無取 代苯基及α萘基之情況。 4. 一種窟衍生物’其特徵係以下述一般式(3)所表示, R2 R3In the general formula (2), Ar3 is a substituted or unsubstituted naphthalene, a substituted or unsubstituted phenanthrene, and Ar4 represents a substituent of a substituted or unsubstituted aryl group having a core number of 6 to 14 in a single or plural combination. R1 to rm represent a hydrogen atom or a substituent 'k is an integer of 1 to 4, and when k is 2 or more, R11 may be the same or different from each other'. In addition to Ar3 being an unsubstituted β-naphthyl group, Ar4 is absent. The case of substituting phenyl and α-naphthyl. 4. A cave derivative' characterized by the following general formula (3), R2 R3 R8 —般式(3)中,Ar4、Ar5各自獨立,表示核碳數6〜14 -131 - 200911731 之取代或無取代的芳基以單獨或複數的組合所構成之取代 基’惟’ Ar4#Ar5,Ar4' Ar5不含蒽,R1〜R】2表示氫原子 或取代基,k爲1〜4之整數,又,k爲2以上時’ R11彼此 可相同或相異,1爲1〜4之整數,又,1爲2以上時,R12彼 此可相同或相異。 5 ·〜種窟衍生物,其特徵係以下述一般式(4)所表示,R8 In the general formula (3), Ar4 and Ar5 are each independently, and represent a substituent of a substituted or unsubstituted aryl group having a carbon number of 6 to 14 -131 to 200911731 in a single or plural combination. Ar5, Ar4' Ar5 does not contain ruthenium, R1 to R] 2 represents a hydrogen atom or a substituent, k is an integer of 1 to 4, and when k is 2 or more, 'R11 may be the same or different from each other, and 1 is 1 to 4 In an integer, when 1 is 2 or more, R12 may be the same or different from each other. 5 · ~ species of cave derivatives, the characteristics are expressed by the following general formula (4), —般式(4)中’ Ar6、Ar7各自獨立,表示核碳數6〜14 之取代或無取代的芳基以單獨或複數的組合所構成之取代 基,惟,ArVAr7,Ar6、Ar7不含蒽,r21〜r3Q表示氫原子 或取代基。 6_如申請專利範圍第1、3及4中任一項之窟衍生物, 其中, R1〜R1Q中至少一個係核碳數6〜M之取代或無取代之 方基。 7 ·如申sra專利範圍第5項之蒽衍生物,其中, R R 中至少一個係核碳數6〜1 4之取代或無取代 之芳基。 ^ 8 ·如申s靑專利範圍第7項之窟衍生物,其中, -132- 200911731 R22與R2 7係各自獨立,爲核碳數6〜14之取代或無取 代之芳基以單獨或複數組合所構成之取代基。 9.如申請專利範圍第1、3、4及5項中任一項之窟衍生 物,其中, 該芳基取代基之至少1個係下述—般式(5)構造之間苯 撐基,In the general formula (4), 'Ar6 and Ar7 are each independently, and represent a substituent in which a substituted or unsubstituted aryl group having a carbon number of 6 to 14 is a combination of singly or plural, but ArVAr7, Ar6, and Ar7 are not contained.蒽, r21 to r3Q represent a hydrogen atom or a substituent. 6_. The cave derivative according to any one of claims 1, 3 and 4, wherein at least one of R1 to R1Q is a substituted or unsubstituted square having a carbon number of 6 to M. 7. The hydrazine derivative of claim 5, wherein at least one of R R is a substituted or unsubstituted aryl group having 6 to 14 carbon atoms. ^ 8 · Such as the s 靑 靑 patent scope of the seventh item of the cave derivatives, where -132- 200911731 R22 and R2 7 are independent of each other, the number of carbon atoms 6 to 14 substituted or unsubstituted aryl group alone or in plural The substituents formed by the combination. 9. The cave derivative according to any one of claims 1, 3, 4 and 5, wherein at least one of the aryl substituents is a phenylene group having the following formula (5) , —般式(5)中,Ar8爲核碳數6〜14之取代或無取代之 芳基以單獨或複數組合所構成之取代基,R 13表示氫原子 或取代基,m爲1〜4之整數,m爲2以上時,R13彼此可相 同或相異。 1 〇·—種有機EL元件用材料,其特徵係含有申請專利 範圍第1、3、4及5項中任一項之窟衍生物。 1 1 ·—種有機EL元件用發光材料,其特徵係含有申請 專利範圍第1、3、4及5項中任一項之窟衍生物。 12.—種有機EL元件,其係於陰極與陽極間夾持含至 少發光層之一層或複數層所成之有機薄膜層,其特徵係 該有機薄膜層之至少一層含申請專利範圍第1、3、4 及5項中任一項之窟衍生物作爲單獨或混合物之成分。 -133- 200911731 13. 如申請專利範圍第12項之有機EL 前述發光層含申請專利範圍第1、3、 之窟衍生物作爲發光材料。 14. 如申請專利範圍第12項之有機EL 前述發光層係含申請專利範圍第1、3 項之窟衍生物作爲主體材料。 15. 如申請專利範圍第12項之有機EL 前述發光層更含有螢光性或磷光性之 16. 如申請專利範圍第15項之有機EL 前述發光層係含芳基胺化合物。 17. 如申請專利範圍第16項之有機EL 前述發光層含有苯乙烯基胺化合物。 18. 如申請專利範圍第I6項之有機EL 前述發光層含芳香族胺化合物。 元件,其中, 4及5項中任一項 元件,其中, 、4及5項中任一 元件,其中, 摻雜劑。 元件,其中, 元件,其中, 元件,其中, -134- 200911731 明 說 單 無簡 lgu :# 為符 圖件 表元 代之 定圖 ••指表 圖案代 表本本 無 代N Z-N 定一二 t 曰 X 八、本案若有化學式時,請揭示最能顯示發明特徵的化學 式··In the general formula (5), Ar8 is a substituent in which a substituted or unsubstituted aryl group having 6 to 14 carbon atoms is formed singly or in combination, and R 13 represents a hydrogen atom or a substituent, and m is 1 to 4; An integer, when m is 2 or more, R13 may be the same or different from each other. A material for an organic EL device, which is characterized by containing a cave derivative according to any one of claims 1, 3, 4 and 5. A luminescent material for an organic EL device, which is characterized by containing a cave derivative according to any one of claims 1, 3, 4 and 5. 12. An organic EL device, wherein an organic thin film layer comprising at least one layer or a plurality of layers of a light-emitting layer is sandwiched between a cathode and an anode, wherein at least one layer of the organic thin film layer comprises a patent application scope number 1. The cave derivatives of any of items 3, 4 and 5 are used as separate or mixtures. -133- 200911731 13. Organic EL as claimed in claim 12 The above-mentioned light-emitting layer contains the derivative of the first, third, and third parties of the patent application as a light-emitting material. 14. The organic EL as claimed in item 12 of the patent application includes the cave derivative of the first and third paragraphs of the patent application as the main material. 15. The organic EL as claimed in claim 12, wherein the luminescent layer further contains fluorescing or phosphorescent. 16. The organic EL of claim 15 is an arylamine-containing compound. 17. The organic EL as claimed in claim 16 wherein the luminescent layer contains a styrylamine compound. 18. The organic EL as claimed in claim 1 of the invention, wherein the luminescent layer contains an aromatic amine compound. An element, wherein any one of the items 4 and 5, wherein, any of the items 4, 5, and 5, wherein, the dopant. Component, wherein, component, wherein, component, wherein, -134- 200911731 Ming said that there is no simple lgu: # is a map of the map element on behalf of the map • • refers to the table pattern represents the book without generation N ZN fixed one two t 曰X 8. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention.
TW097125279A 2007-07-07 2008-07-04 Chrysene derivative, material for organic electroluminescence device, emitting material for organic electroluminescence device and organic electroluminescence device TW200911731A (en)

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