TW200909502A - Water soluble resin composition having a light-shielding property - Google Patents
Water soluble resin composition having a light-shielding property Download PDFInfo
- Publication number
- TW200909502A TW200909502A TW097121155A TW97121155A TW200909502A TW 200909502 A TW200909502 A TW 200909502A TW 097121155 A TW097121155 A TW 097121155A TW 97121155 A TW97121155 A TW 97121155A TW 200909502 A TW200909502 A TW 200909502A
- Authority
- TW
- Taiwan
- Prior art keywords
- dyes
- water
- light
- soluble resin
- resin composition
- Prior art date
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 72
- 239000000975 dye Substances 0.000 claims description 52
- 230000001681 protective effect Effects 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 27
- -1 acetylene alcohol Chemical compound 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 11
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 11
- 239000004094 surface-active agent Substances 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 229920002873 Polyethylenimine Polymers 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 239000000987 azo dye Substances 0.000 claims description 3
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 150000002596 lactones Chemical class 0.000 claims description 3
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 claims description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000999 acridine dye Substances 0.000 claims description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004056 anthraquinones Chemical class 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- 125000005626 carbonium group Chemical group 0.000 claims description 2
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 claims description 2
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 229940097275 indigo Drugs 0.000 claims description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 239000001005 nitro dye Substances 0.000 claims description 2
- 239000001006 nitroso dye Substances 0.000 claims description 2
- 239000001007 phthalocyanine dye Substances 0.000 claims description 2
- 229920000083 poly(allylamine) Polymers 0.000 claims description 2
- 239000001008 quinone-imine dye Substances 0.000 claims description 2
- 239000001016 thiazine dye Substances 0.000 claims description 2
- 239000001017 thiazole dye Substances 0.000 claims description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 claims description 2
- 239000001018 xanthene dye Substances 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims 3
- RWZNZAUJGIKPJR-UHFFFAOYSA-N 2-hydroxyethyl ethanesulfonate Chemical compound CCS(=O)(=O)OCCO RWZNZAUJGIKPJR-UHFFFAOYSA-N 0.000 claims 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 claims 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims 1
- 239000001000 anthraquinone dye Substances 0.000 claims 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims 1
- 239000012965 benzophenone Substances 0.000 claims 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 claims 1
- DDLNJUKFVPHVHA-UHFFFAOYSA-N ethyl acetate;2-hydroxypropanoic acid Chemical compound CCOC(C)=O.CC(O)C(O)=O DDLNJUKFVPHVHA-UHFFFAOYSA-N 0.000 claims 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims 1
- 229940057867 methyl lactate Drugs 0.000 claims 1
- 239000012074 organic phase Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007539 photo-oxidation reaction Methods 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NUPSHWCALHZGOV-UHFFFAOYSA-N Decyl acetate Chemical compound CCCCCCCCCCOC(C)=O NUPSHWCALHZGOV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IMSVBNQVZVQSND-UHFFFAOYSA-N 1,5-bis(sulfanyl)pentan-3-one Chemical compound SCCC(=O)CCS IMSVBNQVZVQSND-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- IHJUECRFYCQBMW-UHFFFAOYSA-N 2,5-dimethylhex-3-yne-2,5-diol Chemical compound CC(C)(O)C#CC(C)(C)O IHJUECRFYCQBMW-UHFFFAOYSA-N 0.000 description 1
- ZWNMRZQYWRLGMM-UHFFFAOYSA-N 2,5-dimethylhexane-2,5-diol Chemical compound CC(C)(O)CCC(C)(C)O ZWNMRZQYWRLGMM-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- MSTFRUQNYRRUKZ-UHFFFAOYSA-N 5,6-dihydro-2h-thiazine Chemical compound C1CC=CNS1 MSTFRUQNYRRUKZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- FUGCGCXGFWNOSY-UHFFFAOYSA-N decyl 2-hydroxypropanoate Chemical compound CCCCCCCCCCOC(=O)C(C)O FUGCGCXGFWNOSY-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical group CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
- C08L101/14—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity the macromolecular compounds being water soluble or water swellable, e.g. aqueous gels
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
- C08L29/02—Homopolymers or copolymers of unsaturated alcohols
- C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
- C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
- C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B29/00—Monoazo dyes prepared by diazotising and coupling
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/08—Stabilised against heat, light or radiation or oxydation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/70—Organic dyes or pigments; Optical brightening agents
Abstract
Description
200909502 九、發明說明: C發明所屬之技術領域3 發明領域 本發明係有關於一種遮光型水溶性樹脂組成物,更詳 5 而言之’係有關於一種用以防止有機薄膜電晶體(OTFT)、 具有可撓性之顯示器或有機電性發光元件(OLED)之有機 半導體膜與層間介電層相接形成時結晶性降低且對層間介 電層進行光照射時產生光氧化之有機半導體保護膜用遮光 型水溶性樹脂組成物。 10 【先前技術】 發明背景 習知OTFT製造程序,係於有機半導體膜成膜後,將以 有機溶劑作為基底之層間介電層之光阻劑與有機半導體膜 直接接觸,因此產生較之於有機溶劑相對脆弱之有機半導 體薄膜之結晶性將降低以致於〇 T F τ驅動時電移動度及開/ 閉電性能低落之問題。 〃又,有機半導體有暴露於紫外線區域之光下時,因光 氧化以致光減性降低之問題,並有為了層間介電層之光 20 阻劑之形狀化而使層間介電層於紫外線區域曝光日^與層 間"電層祕之有機半導體膜將吸收光而發生先氧化現 ^導致有機半導體之物性降低,進喊元件性能降低之 咕。因此,必須研究如何使〇tft製造程序中有機體 溥骐之損傷達最小化。 C項h明内溶1】 5 200909502 發明揭示 發明欲解決之問題 為解決上述習知技術之問題,本發明之目的在於提供 用以置於OTFT、具有可撓性之顯示器或〇LED等有機電性 5 =件之有機半導體膜與層間介電層(以有機㈣為基底之 光阻劑)間作為有機半導體之遮光性保護膜之遮光型水溶 性樹脂組成物、及含有前述組成物經硬化後形成之遮光性 保護膜之有機電性元件、以及利用前述遮光型水溶性樹脂 組成物之有機電性元件之製造方法。 10用以欲解決問題之手段 為達成前述目的,本發明提供一種遮光型水溶性樹脂 組成物,該組成物包含: a) 水溶性樹脂; b) 水溶性染料化合物;及 15 c)溶劑。 更理想者’本發明提供—種遮光型水溶性樹脂組成 物’該組成物包含: a) 水溶性樹脂1〇〇重量份; b) 水溶性染料化合物5至5〇重量份;及 2〇 e)使組成物總量中之固形物含量達3至6G重量%之溶 劑。 又’本發明並提供-種有機電性元件,係於有機半導 體膜,、層間”電層間含有將前述遮光型水溶性樹脂組成物 硬化形成之遮光性保護膜者。 200909502 又,本發明並提供一種有機電性元件之製造方法,係 包3將如述遮光型水溶性樹脂組成物塗佈於有機半導體 膜上後,經硬化形成遮光性保護膜,並於前述遮光性保護 膜上形成層間介電層之步驟。 5 發明效果 如此-來,本發明之遮光型水溶性樹脂組成物於製成 薄膜時’不僅平坦性、咐熱性、抗化學腐錄、電移動度 等性能均優且透光度低,故可有效作為用以置於有機半導 體膜與層間介電層間、以使包含有機電性元件之有機半導 10體之損傷達最小化之有機半導體之遮光性保護膜。 圖式簡單說明 第1圖係本發明測試例中測量電場發光電晶體(FET)之 電移動度時所使用之傳輸特性圖。 c實施方式3 15用以實施發明之最佳形態 詳細說明本發明如下。 本發明之遮光型水溶性樹脂组成物特徵在於包含水溶 性樹脂、水溶性染料化合物及溶劑。又,更理想者可相對 於前述水溶性樹脂刚重量份包含前述水溶性染料化合物5 20至50重量份及使組成物總量中之固形物含量達3至6〇重量 %之前述溶劑。 本發明使用之前述a)水溶性樹脂具有可易於形成均質 塗佈膜之作用。 前述水溶性樹脂,若以對水之溶解度達〇1重量%以上 7 200909502 之聚合體為條件八 用。水溶性樹脂之㈣實;;^任—種水溶性樹脂皆可使 闕、聚丙烯酸及其尊Γ 聚乙稀醇、聚乙稀料咬 乙醯基、f输何生物。聚乙烯醇衍生物,可舉以 經基者為例。、丁_基等取代聚乙烯醇之 酮-醋酸乙稀二生物,舉例有乙稀·定 —基==:稀醇共聚物、乙烯 酸、聚曱㈣_ H物4。聚丙烯酸可舉聚丙烯 f i i 6烯酸_甲基丙騎共聚物、丙烯酸醋 10 15 =基丙^_共聚物等為例。此外亦可使用聚乙亞胺、聚 諸等聚乙烯胺、聚稀丙胺等作為水溶性樹脂。上述 =可早獨使用或將2種以上混合使用,又以使用聚乙稀 =乙稀鱗°定映其等之料物尤佳。 述水右用量過低,黏度將變低而難以形成 膜,若用量過多,_度變高,於形成薄膜時恐將造成 塗佈裝備之使用困難。 月J述水冷性;f4脂之聚苯乙締換算重量平均分子量卿) 宜為 1,000至300,〇〇〇,為3,〇〇〇至1〇〇,_更佳 。前述聚苯乙 稀換算重量平均分子量未達丨,嶋者塗佈性下降同時塗佈 膜之長期穩定性降低’超過3〇〇,〇〇〇者則恐有難以形成均勻 20之塗佈膜且濾光片之透過性降低之虞。 本發明使用之前述b)水溶性染料化合物並無特別限 制’凡可溶於水並分散之染料皆可使用。 前述水溶性染料化合物之具體實例,有偶氮染料(Azo dyes)、重乳染料(Diazo dyes)、蒽艇染料(Anthraquinone 200909502 dyes)、靛屬染料(Indigoid dyes)、靛藍系染料(Indigo dyes)、 硫散系染料(Thioindigo dyes)、錢離子型染料(Carbonium dyes)、二苯甲烧系染料(Diphenylmethane dyes)、三苯甲烧 系染料(Triphenylmethane dyes)、二苯并°底喃系染料 5 (Xanthene dyes)、0丫咬系染料(Acridine dyes)、酜青染料 (Phthalocyanine dyes)、次曱基染料(Methine dyes)、聚次甲 基系染料(Polymethine dyes)、次甲基偶氮系染料 (Azomethine dyes)、σ塞°坐染料(Thiazole dyes)、酉昆亞胺染料 (Quinoneimine dyes)、0丫嘻系染料(Azine dyes)、°惡讲系染 10 料(Oxazine dyes)、σ塞3井系染料(Thiazine dyes)、内酉旨染料 (Lactone dyes)、胺酮染料(Amino Ketone dyes)、經基酮染 料(Hydroxy ketone dyes)、石肖基染料(Nitro dyes)、亞硝基染 料(Nitroso dyes)及嗜琳染料(Quinoline dyes)等,可將該等染 料化合物單獨使用或將2種以上混合使用。 15 前述水溶性染料化合物可相對於水溶性樹脂1〇〇重量 份使用5至50重量份,使用10至30重量份更為理想。若使用 前述範圍内之水溶性染料化合物,可獲得低透光度而適於 形成用以防止有機半導體於層間介電層進行曝光時產生光 氧化之保護膜。 2〇 本發明使用之前述c)溶劑,可使用水或水與有機溶劑 之混合物。右使用水’以業經洛德、離子交換處理、過清 處理、各種吸附處理等去除有機雜質及金屬離子者為佳, 有機溶劑係用以使塗佈性更加提升,並以對水具可溶性者 為佳。對水具可溶性之有機溶劑,凡對水可溶解〇1重量% 9 200909502 以上之溶劑皆可使用,其具體實例有甲醇、乙醇、異丙醇 等醇類;丙酮、曱基乙基酮、2-庚酮、環己酮等酮類;乙 酸曱酯、乙酸乙酯等酯類;乙二醇一甲基醚、乙二醇一乙 基醚等乙二醇單烷基醚類;乙二醇一甲基醚乙酸酯、乙二 5 醇一乙基醚乙酸酯等乙二醇單烷基醚乙酸酯類;丙二醇一 甲基醚、丙二醇一乙基醚等丙二醇單烷基醚類;丙二醇一 甲基醚乙酸酯、丙二醇一乙基醚乙酸酯等丙二醇單烷基醚 乙酸酯類;乳酸曱酯、乳酸乙酯等乳酸酯類;甲苯、二甲 苯等芳族烴類;N,N-二甲基乙醯胺、N-甲基吡咯啶酮等醯 10 胺類等。該等溶劑可單獨使用或將2種以上混合使用,並可 於遮光型水溶性樹脂組成物形成薄膜時,在不使薄膜溶解 且同時不損傷有機半導體薄膜之範圍内使用。 前述溶劑之使用宜達到使組成物總量中之固形物含量 為3至60重量%之狀態,更理想者宜達到5至40重量%。固形 15 物含量未達組成物總量之3重量%者,薄膜之厚度變薄而使 薄膜平坦性降低,若超過60重量%,則薄膜之厚度增厚, 於塗佈時恐將造成塗佈裝備之使用困難。 又,本發明之遮光型水溶性樹脂組成物更可包含d)水 溶性界面活性劑。凡可改善水溶性樹脂組成物之塗佈性 20 者,皆可作為該水溶性界面活性劑使用,具體言之,可舉 乙炔醇(acetylene alcohol)、乙快二醇(acetylene glycol)、乙 炔醇之聚乙氧基醇(polyethoxylate)、乙炔二醇之聚乙氧基醇 等為例。乙炔醇及乙炔二醇,可舉例如:3-甲基-1-丁炔-3-醇、3-甲基-1-戊炔-3-醇、3,6-二曱基-4-辛炔-3,6-二醇、 10 200909502 - 2,4,7,9-四甲基_5_癸炔_4,7-二醇、3,5-二曱基-1-己炔-3_醇、 2,5-二甲基-3-己炔_2,5-二醇、2,5-二甲基-2,5-己二醇等,該 等界面活性劑可單獨使用或將2種以上混合使用。 前述水溶性界面活性劑係相對於水溶性樹脂100重量 5份可使用〇·〇〇〇ι至2重量份。於前述範圍内使用水溶性界面 活性劑時’可使組成物之塗佈性更加提升。 本發明之遮光型樹脂組成物可藉由混合前述成分製 • 成’於使用在有機電性元件上作為保護膜前宜以0.1〜 I 〇.2μηι(以異丙醇處理)之微孔過濾器等進行過濾。 1〇 又,本發明並提供一種有機電性元件,係於有機半導 體膜與層間介電層間包含前述遮光型水溶性樹脂組成物經 硬化而成之遮光性保護膜者。該有機電性元件可藉由一將 月'J述遮光型水溶性樹脂組成物塗佈於有機半導體膜上後, 經硬化形成遮光性保護膜,並於前述遮光性保護膜上形成 15層間介電層之步驟製造。 則述遮光性保護膜係位於有機半導體膜與層間介電層 用ス隔開以有機溶劑為基底之光阻劑所組成之層間 介電層保護有機半導體膜,同時防止有機半導體於層間介 電層曝光時產生光氧化,扮演有機半導體之遮光性保護膜 加之^色。前述有機半導體膜、本發明之遮光性保護膜及層 間,I電層可呈於基板上形成圖案之狀態存在。 、具體言之’將前述遮光型轉性難組成物以喷塗 法、輥塗法、旋轉塗佈法、嘴墨_-jet)法等—般方法塗佈 於有機半導_上,不經由驗(Prebaking)㈣對流供箱 11 200909502 (convection oven)進行硬化,形成目標之塗佈膜。此時,前 述硬化宜以80〜150。(:之溫度進行40〜1〇〇分鐘。所形成之 遮光性保護膜可具有0.05至0.2微米之厚度。 包含前述本發明之遮光性保護膜之有機電性元件,可 5舉例如有機薄膜電晶體(OTFO,organic thin-film transistor)、具有可撓性之顯示器(flexible display)及有機電 性發光元件(OLED,organic light-emitting device)等。 依上述製成之本發明之遮光性保護膜,不僅薄膜平坦 性、耐熱性、抗化學腐蝕性、電移動度等性能均優且透光 1〇度低,故本發明之遮光型水溶性樹脂組成物可有效作為用 以置於有機半導體膜與層間介電層間、以使包含有機電性 元件之有機半導體之損傷達最小化之有機半導體之遮光性 保護膜。 以下提出較佳實施例以增進對本發明之理解,但下列 15實施例僅為本發明之舉例說明,本發明之範圍並非以下列 實施例為限。 實施你丨1 將業經蒸餾、離子交換處理、過濾處理、各種吸附處 理等去除有機雜質及金屬離子之水置入具有冷卻管與授掉 2〇器之燒瓶中,再緩緩添加波力賽恩司(p〇lysde顧,㈣公 司製之聚乙稀醇(PVA)粉末(聚笨乙稀換算重量平均分子量 6,〇〇〇)作為水溶性樹脂後,以每1G〜2(rc/lQ分之速度使溫 度上升至航並於9GI之溫度下獅2小時。社置於常溫 下待水溶性樹脂溶液之溫度下降。在此,相對於水溶性樹 12 200909502 脂100重量份,放入酸性染料之苯胺黑2(Nigrosine AcidBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-shielding water-soluble resin composition, and more particularly to a method for preventing an organic thin film transistor (OTFT). An organic semiconductor protective film which is formed when a flexible semiconductor display or an organic semiconductor light-emitting device (OLED) is formed in contact with an interlayer dielectric layer to reduce crystallinity and photo-oxidize when the interlayer dielectric layer is irradiated with light A light-shielding water-soluble resin composition is used. [Previous Art] BACKGROUND OF THE INVENTION Conventional OTFT manufacturing processes are in which a photoresist of an interlayer dielectric layer using an organic solvent as a base is directly contacted with an organic semiconductor film after film formation of an organic semiconductor film, thereby producing an organic semiconductor film. The crystallinity of the organic semiconductor film with relatively weak solvent will be lowered so that the electric mobility and the on/off performance of the 〇TF τ drive are low. Further, when the organic semiconductor is exposed to light in an ultraviolet region, the photo-oxidation causes a decrease in photo-reduction property, and the interlayer dielectric layer is in the ultraviolet region for the formation of the light-receptor of the interlayer dielectric layer. The exposure time ^ and the interlayer " electrical layer of the organic semiconductor film will absorb light and first oxidize now, resulting in a decrease in the physical properties of the organic semiconductor, and the performance of the shouting component is reduced. Therefore, it is necessary to study how to minimize the damage of organisms in the 〇tft manufacturing process. C terminology 1 1 5 200909502 Disclosure of the Invention The problem to be solved by the invention is to solve the above problems of the prior art, and an object of the present invention is to provide an organic device for placing an OTFT, a flexible display or a 〇LED. a light-shielding water-soluble resin composition which is a light-shielding protective film of an organic semiconductor between an organic semiconductor film and an interlayer dielectric layer (an organic (4)-based photoresist), and a composition containing the above-mentioned composition after hardening An organic electric component of the light-shielding protective film formed, and a method of producing an organic electrical component using the light-shielding water-soluble resin composition. Means for Solving the Problems In order to attain the foregoing object, the present invention provides a light-shielding water-soluble resin composition comprising: a) a water-soluble resin; b) a water-soluble dye compound; and 15 c) a solvent. More preferably, the present invention provides a light-shielding water-soluble resin composition which comprises: a) 1 part by weight of a water-soluble resin; b) 5 to 5 parts by weight of a water-soluble dye compound; A solvent having a solid content of the total amount of the composition of 3 to 6 G% by weight. Further, the present invention provides a light-shielding protective film formed by curing the light-shielding water-soluble resin composition between the organic semiconductor film and the interlayer dielectric layer. 200909502 Further, the present invention provides In a method for producing an organic electric component, the coating material 3 is applied to an organic semiconductor film by applying a light-shielding resin composition as described above, and then cured to form a light-shielding protective film, and an interlayer dielectric layer is formed on the light-shielding protective film. Step of the electric layer. 5 Effect of the Invention In this way, the light-shielding water-soluble resin composition of the present invention has excellent properties such as flatness, heat resistance, chemical resistance, electrical mobility, and the like when formed into a film. Since the degree is low, it can be effectively used as a light-shielding protective film for interposing an organic semiconductor film and an interlayer dielectric layer to minimize damage of the organic semiconductor semiconductor body including the organic electrical component. DESCRIPTION OF THE DRAWINGS Fig. 1 is a transmission characteristic diagram used in measuring the electric mobility of an electric field illuminating transistor (FET) in a test example of the present invention. c Embodiment 3 15 is used to carry out the invention BEST MODE FOR CARRYING OUT THE INVENTION The present invention is as follows. The light-shielding water-soluble resin composition of the present invention is characterized by comprising a water-soluble resin, a water-soluble dye compound, and a solvent. Further, it is more preferable to include the foregoing with respect to the water-soluble resin 20 to 50 parts by weight of the water-soluble dye compound 5 and the aforementioned solvent in which the solid content in the total amount of the composition is 3 to 6 % by weight. The a) water-soluble resin used in the present invention has a formable coating film which can be easily formed. The water-soluble resin is used in the case of a polymer having a solubility in water of 1% by weight or more and 7 200909502. The water-soluble resin (4) is a solid water-soluble resin; Polyacrylic acid and its respects Polyethylene glycol, polyethylene material biting ethyl ketone group, f to lose organisms. Polyvinyl alcohol derivatives, which can be exemplified by the base, butyl group and the like substituted polyvinyl alcohol ketone - Ethyl acetate dibasic organisms, for example, ethylene dibasic-based ==: dilute alcohol copolymer, ethylene acid, polyfluorene (tetra) _ H 4. The polyacrylic acid can be exemplified by polypropylene fii 6 enoic acid _ methyl propylene copolymer Acrylic vinegar 10 15 = base For example, a polyethylenimine, a polyvinylamine, a polyallylamine, or the like can be used as the water-soluble resin. The above-mentioned = can be used alone or in combination of two or more kinds, and It is especially good to use the polyethylene=Ethyl scale to determine the contents of the material. The water content is too low, the viscosity will become low and it is difficult to form a film. If the amount is too much, the _ degree will become high, and it will be fearful when forming a film. It is difficult to use the coating equipment. The water-cooling property of the month J; the weight average molecular weight of the polystyrene-butadiene of the f4 grease is preferably 1,000 to 300, 〇〇〇, 3, 〇〇〇 to 1 〇〇, _More preferably, the weight average molecular weight of the polystyrene conversion is less than 丨, and the coating property is lowered while the long-term stability of the coating film is lowered by more than 3 〇〇, and the latter may be difficult to form a uniform 20 The film is coated and the permeability of the filter is lowered. The b) water-soluble dye compound used in the present invention is not particularly limited. Any dye which is soluble in water and dispersed can be used. Specific examples of the aforementioned water-soluble dye compound include azo dyes, Diazo dyes, Anthraquinone 200909502 dyes, Indigoid dyes, and Indigo dyes. , Thioindigo dyes, Carbonium dyes, Diphenylmethane dyes, Triphenylmethane dyes, Dibenzoxene dyes 5 (Xanthene dyes), Acridine dyes, Phthalocyanine dyes, Methine dyes, Polymethine dyes, Methyl azo dyes (Azomethine dyes), thiazole dyes, Quinoneimine dyes, Azine dyes, Oxazine dyes, σ plugs 3 Thiazine dyes, Lactone dyes, Amino Ketone dyes, Hydroxy ketone dyes, Nitro dyes, Nitroso dyes ) and Quinoline dye s), etc., the dye compounds may be used singly or in combination of two or more. The above water-soluble dye compound may be used in an amount of 5 to 50 parts by weight, based on 1 part by weight of the water-soluble resin, and more preferably 10 to 30 parts by weight. When a water-soluble dye compound within the above range is used, low transmittance can be obtained and it is suitable to form a protective film for preventing photooxidation of an organic semiconductor when exposed to an interlayer dielectric layer. 2) The above c) solvent used in the present invention may be water or a mixture of water and an organic solvent. It is better to remove the organic impurities and metal ions by using the water in the right, such as Lod, ion exchange treatment, clearing treatment, various adsorption treatments, etc., and the organic solvent is used to improve the coating property and to be soluble in water. It is better. For the organic solvent soluble in water, any solvent which can dissolve 1% by weight of water 9 200909502 can be used, and specific examples thereof include alcohols such as methanol, ethanol and isopropanol; acetone, mercaptoethyl ketone, 2 a ketone such as heptanone or cyclohexanone; an ester such as decyl acetate or ethyl acetate; an ethylene glycol monoalkyl ether such as ethylene glycol monomethyl ether or ethylene glycol monoethyl ether; Ethylene glycol monoalkyl ether acetate such as monomethyl ether acetate, ethylene glycol monoethyl ether acetate; propylene glycol monoalkyl ether such as propylene glycol monomethyl ether or propylene glycol monoethyl ether; Propylene glycol monomethyl ether acetate such as propylene glycol monomethyl ether acetate or propylene glycol monoethyl ether acetate; lactic acid esters such as decyl lactate and ethyl lactate; aromatic hydrocarbons such as toluene and xylene; , N-dimethylacetamide, N-methylpyrrolidone and the like 10 amines. These solvents may be used singly or in combination of two or more kinds, and when a film is formed on the light-shielding water-soluble resin composition, it can be used without dissolving the film and without damaging the organic semiconductor film. The solvent is preferably used in such a manner that the solid content in the total amount of the composition is from 3 to 60% by weight, more preferably from 5 to 40% by weight. When the content of the solid material 15 is less than 3% by weight of the total amount of the composition, the thickness of the film is thinned to lower the flatness of the film, and if it exceeds 60% by weight, the thickness of the film is thickened, which may cause coating during coating. The use of equipment is difficult. Further, the light-shielding water-soluble resin composition of the present invention may further comprise d) a water-soluble surfactant. Any of the water-soluble surfactants which can improve the applicability of the water-soluble resin composition can be used as the water-soluble surfactant. Specifically, acetylene alcohol, acetylene glycol, and acetylene alcohol can be mentioned. For example, polyethoxylate, polyethoxy alcohol of acetylene glycol, and the like are exemplified. Examples of acetylene alcohol and acetylene glycol include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, and 3,6-dimercapto-4-octyl Alkyne-3,6-diol, 10 200909502 - 2,4,7,9-tetramethyl-5-decyne_4,7-diol, 3,5-dimercapto-1-hexyne-3 Alcohol, 2,5-dimethyl-3-hexyne-2,5-diol, 2,5-dimethyl-2,5-hexanediol, etc., these surfactants can be used alone or Two or more types are used in combination. The water-soluble surfactant may be used in an amount of from 〇·〇〇〇ι to 2 parts by weight based on 5 parts by weight of the water-soluble resin. When the water-soluble surfactant is used within the above range, the coating property of the composition can be further improved. The light-shielding resin composition of the present invention can be prepared by mixing the above-mentioned components into a microporous filter which is preferably used in an organic electrical component as a protective film at 0.1 to 1 〇.2μηι (treated with isopropyl alcohol). Wait for filtering. Further, the present invention provides an organic electric component comprising a light-shielding protective film obtained by curing the light-shielding water-soluble resin composition between an organic semiconductor film and an interlayer dielectric layer. The organic electroconductive element can be applied to an organic semiconductor film by applying a light-shielding resin composition of the present invention, and then cured to form a light-shielding protective film, and a 15-layer intercalation layer is formed on the light-shielding protective film. The steps of the electrical layer are made. The light-shielding protective film is disposed between the organic semiconductor film and the interlayer dielectric layer, and the interlayer dielectric layer is formed by an organic solvent-based photoresist to protect the organic semiconductor film while preventing the organic semiconductor from inter-layer dielectric layer. Photooxidation occurs during exposure, and it acts as a light-shielding protective film for organic semiconductors. In the organic semiconductor film, the light-shielding protective film of the present invention, and the interlayer, the I-electrode layer may exist in a state in which a pattern is formed on the substrate. Specifically, the above-mentioned light-shielding composition is coated on the organic semiconductor with a general method such as a spray coating method, a roll coating method, a spin coating method, or a nozzle ink method. Prebaking (4) The convection tank 11 200909502 (convection oven) is hardened to form a target coating film. At this time, the above hardening is preferably 80 to 150. (The temperature is 40 to 1 minute. The formed light-shielding protective film may have a thickness of 0.05 to 0.2 μm. The organic electroconductive element comprising the above-described light-shielding protective film of the present invention may be, for example, an organic thin film electric OT (organic thin-film transistor), flexible display, organic light-emitting device (OLED), etc. The light-shielding protective film of the present invention prepared as described above In addition, the film flatness, heat resistance, chemical corrosion resistance, electrical mobility and the like are excellent, and the light transmittance is low, so the light-shielding water-soluble resin composition of the present invention can be effectively used as an organic semiconductor film. A light-shielding protective film between an interlayer dielectric layer and an organic semiconductor for minimizing damage of an organic semiconductor containing an organic electrical component. Preferred embodiments are hereinafter described to enhance the understanding of the present invention, but the following 15 embodiments are only The scope of the present invention is not limited by the following examples. The implementation of the present invention will be subject to distillation, ion exchange treatment, filtration treatment, Various kinds of water for removing organic impurities and metal ions, such as adsorption treatment, are placed in a flask having a cooling tube and a transfer device, and then slowly added to the bottle of Polyethylene (P. lys de Gu, (4) company. (PVA) powder (polystyrene-equivalent weight average molecular weight of 6, 〇〇〇) as a water-soluble resin, the temperature is raised to 1 MPa to 2 (rc/lQ speed to the voyage and the temperature of 9GI lion 2 The temperature of the water-soluble resin solution is lowered at room temperature. Here, Nigrosine Acid is placed in an acid dye with respect to 100 parts by weight of the water-soluble tree 12 200909502 grease.
Black2、東南化成公司(日文:F >十λ化成社))6.25重量份 作為水溶性染料化合物’經攪拌製成水溶性樹脂組成物。 前述組成物總量中固形物含量係調整為9重量%。 5 tJkMl 除於前述實施例1中相對於水溶性樹脂100重量份添加 0.0005重量份之乙炔二醇(道康寧(Dow corning)公司製之 Q2-5212)外,以同於前述實施例1之方法製成水溶性樹脂組 成物。 10 實施^ 除於前述實施例2中將6.25重量份之苯胺黑2改為12.5 重量份外,以同於前述實施例2之方法製成水溶性樹脂組成 物0 實施你j_£ 15 除於前述實施例1中將6·25重量份之苯胺黑2改為18.75 重量份外,以同於前述實施例2之方法製成水溶性樹脂組成 1,; 物。 實施彳 除於前述實施例2中將6.25重量份之苯胺黑2改為25重 20量份外,以同於前述實施例2之方法製成水溶性樹脂組成 物。 實施例纥 除於前述實施例2中將6·25重量份之苯胺黑2改為31.25 重量份外,以同於前述實施例2之方法製成水溶性樹脂組成 13 200909502 物。 測試例 硬化==!至6製造之水溶性樹脂組成物所組成之 ,下財料鮮㈣ '透光度狀化學腐録, 以作麵半導體膜與相介電層間包含該硬化膜 作為遮光性保護膜之電場發Μ晶體卿關 二_ t刪istQr),再藉由下列方法評價電移 F一ΕΤ Γ水溶性樹脂組成物組叙遮絲保護膜之 10 ’作為比較例卜將測定結果顯示於下表卜 彳)平坦性 /以則述水雜樹脂組成物於玻璃基板上塗佈成塗膜 後藉光子裝置等厚度夏測裝置測量相對於約刚ρο^之厚 度,若。其顯著性未達2%以〇表示,若未達3%以△表示,若 未達5%以X表*。藉由財法可確财雜樹雜水溶性 15染料化合物之溶解穩定性以及沈殿之可能性。 口)透光度 使則述水溶性樹脂組成物硬化製成厚度〇 7^m之塗膜 後’對該塗膜測量可視光之光吸收圖譜(spectrum),於4〇〇11〇1 時將透光率為50%以下者以〇表示,51〜7〇%者以△表示, 20 71〜90%者以X表示。 ,、)抗化學腐蝕性 使前述水溶性樹脂組成物硬化製成厚度0.7μηι之塗膜 後’將該塗膜於有機溶劑η_甲基吡咯啶酮(ΝΜΡ)以70t浸潰 (dipping)5分鐘,再以超純水沖洗(rinse),並測量NMP處理 14 200909502 岫後膜厚之變化率。此時,膜厚之變化率為0〜20%者以〇 表示,21〜40%者以Α表示,41%以上者以X表示。 二)電移動度 以下列方式評價於有機半導體膜與層間介電層間包含 5珂述水溶性樹脂組成物之硬化膜以作為遮光性保護膜之 FET之電移動度。固定源極-汲極間之電壓(VDS),並測量用 以顯示源極-汲極間電流(IDS)對閘極電壓(¥(}5)產生之變 化之傳輪特性(Transfer characteristics,閘極電壓之影響係 以電場形態傳輸至通道故稱為傳輸特性)後,按下列算式丄 10算出電移動度。此時,量測得到之電移動度為〇〇1以上者 以〇表示,0.009〜0.001者以△表示,〇 〇辦以下者以乂表 7]T ° 【算式1】 T WMCi d(sat)=--(Vg—Vth) 2Black 2, Southeast Chemical Company (Japanese: F > 10 λ Chemicals)) 6.25 parts by weight As a water-soluble dye compound, a water-soluble resin composition was prepared by stirring. The solid content in the total amount of the above composition was adjusted to 9% by weight. 5 tJkMl was prepared in the same manner as in the above Example 1 except that 0.0005 parts by weight of acetylene glycol (Q2-5212 manufactured by Dow Corning Co., Ltd.) was added to 100 parts by weight of the water-soluble resin in the foregoing Example 1. A water-soluble resin composition. 10 Implementation ^ In addition to the above Example 2, 6.25 parts by weight of aniline black 2 was changed to 12.5 parts by weight, and the water-soluble resin composition was prepared in the same manner as in the above Example 2. In the same manner as in the above Example 2, a water-soluble resin composition 1 was prepared in the same manner as in the above Example 2 except that 62.5 parts by weight of aniline black 2 was changed to 18.75 parts by weight. (Example) A water-soluble resin composition was prepared in the same manner as in the above Example 2 except that 6.25 parts by weight of aniline black 2 was changed to 25 parts by weight in the same manner as in the above Example 2. EXAMPLES In addition to the above-mentioned Example 2, 62.5 parts by weight of aniline black 2 was changed to 31.25 parts by weight, and a water-soluble resin composition 13 200909502 was prepared in the same manner as in the above Example 2. The test case is hardened ==! to the composition of the water-soluble resin composition manufactured by the 6th, and the next material is fresh (4) 'transparent chemical corrosion record, and the cured film is included as a light-shielding property between the surface semiconductor film and the phase dielectric layer. The electric field of the protective film is Μ Μ ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist ist In the following table, the flatness/the composition of the water-repellent resin is applied to a glass substrate to form a coating film, and then the thickness of the coating device is measured by a thickness measuring device such as a photonic device. The significance is less than 2% expressed as ,, if it is less than 3%, it is represented by △, if it is less than 5%, it is X. The financial method can be used to determine the solubility stability of the water-soluble 15 dye compounds and the possibility of the temple. The transmittance of the water-soluble resin composition is hardened to a thickness of 〇7^m, and the light absorption spectrum of the visible light is measured on the coating film at 4〇〇11〇1. When the light transmittance is 50% or less, it is represented by 〇, 51 to 7〇% is represented by Δ, and 20 71 to 90% is represented by X. ,,) Chemical resistance After the water-soluble resin composition was hardened to a coating film having a thickness of 0.7 μm, the coating film was dipped at 70 t in an organic solvent η-methylpyrrolidone (ΝΜΡ). Minutes, rinse with ultrapure water, and measure the rate of change of film thickness after NMP treatment 14 200909502. In this case, the change rate of the film thickness is 0 to 20%, which is represented by 〇, 21 to 40% is represented by Α, and 41% or more is represented by X. (2) Electric mobility The electric mobility of the FET including the thin film of the water-soluble resin composition between the organic semiconductor film and the interlayer dielectric layer as the light-shielding protective film was evaluated in the following manner. Fixed source-drain voltage (VDS) and measured the transfer characteristics of the source-drain current (IDS) to the gate voltage (¥(}5). After the influence of the pole voltage is transmitted to the channel in the form of electric field, it is called the transmission characteristic), the electric mobility is calculated according to the following formula 丄10. At this time, the measured electric mobility is 〇〇1 or more, which is represented by ,, 0.009. ~0.001 is indicated by △, and the following is shown in Table 7]T ° [Equation 1] T WMCi d(sat)=--(Vg—Vth) 2
2L2L
2L ^ -- (KN) 2 WCi 15 (w:通道寬度,L:通道長度,μ:電移動度,ci :閘極介 電層之靜電容,Vg:閘極電壓,Vth :臨界電壓,KnU 圖所示圖形之傾斜度) 15 200909502 【表1】2L ^ -- (KN) 2 WCi 15 (w: channel width, L: channel length, μ: electrical mobility, ci: static capacitance of the gate dielectric layer, Vg: gate voltage, Vth: threshold voltage, KnU The slope of the graph shown in the figure) 15 200909502 [Table 1]
區分 實施例 比較例1 平i曰性 1 1 2 3 4 5 6 〇 〇 〇 〇 〇 〇 — 透光度 Δ Δ △ 〇 〇 〇 抗化學腐蝕柯 〇 〇 〇 〇 〇 〇 X 〇 〇 〇 〇 〇 〇 X 由前述表1可知’試將本發明所製造之實施例丨至6之遮 5 光型水溶性樹脂組成物與比較例1比較,不僅平坦性及抗化 學腐钮性俱佳且透光度低,特別是具有顯著提高之電移動 度’故可適於作為有機半導體之遮光性保護膜。反之,於 有機半導體膜與層間介電層之光阻劑間未使用前述遮光型 水溶性樹脂組成物作為保護膜之比較例丨,則因電移動度低 10 而難以運用於OTFT上。 tag式簡單說明】 第1圖係本發明測試例中測量電場發光電晶體(FET)之 電移動度時所使用之傳輸特性圖。 【主要元件符號説明】Distinguishing Example Comparative Example 1 Flatness 1 1 2 3 4 5 6 〇〇〇〇〇〇 - Transmittance Δ Δ △ 〇〇〇 Anti-chemical Corrosion 〇〇〇〇〇〇 X 〇〇〇〇〇〇 X It can be seen from the above Table 1 that the composition of the present invention manufactured by the present invention is compared with Comparative Example 1 in comparison with Comparative Example 1, and the flatness and chemical resistance resistance are excellent and the transmittance is good. It is low, especially with a markedly improved electrical mobility, so it can be suitably used as a light-shielding protective film for organic semiconductors. On the other hand, in the comparative example in which the light-shielding-type water-soluble resin composition is not used as the protective film between the organic semiconductor film and the photoresist of the interlayer dielectric layer, it is difficult to apply it to the OTFT because the electric mobility is low by 10. Brief Description of the Tag Type Fig. 1 is a transmission characteristic diagram used when measuring the electric mobility of an electric field illuminating transistor (FET) in the test example of the present invention. [Main component symbol description]
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070055699A KR101482652B1 (en) | 2007-06-07 | 2007-06-07 | Passivation composition for organic semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200909502A true TW200909502A (en) | 2009-03-01 |
TWI455976B TWI455976B (en) | 2014-10-11 |
Family
ID=40179373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097121155A TWI455976B (en) | 2007-06-07 | 2008-06-06 | Water soluble resin composition having a light-shielding property |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5538689B2 (en) |
KR (1) | KR101482652B1 (en) |
CN (1) | CN101319092B (en) |
TW (1) | TWI455976B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2012113238A (en) * | 2009-09-05 | 2013-10-10 | Мерк Патент Гмбх | SOLUTION PROCESSED PASSIVATING LAYERS FOR ORGANIC ELECTRONIC DEVICES |
JP6167016B2 (en) | 2013-10-31 | 2017-07-19 | 富士フイルム株式会社 | Laminate, organic semiconductor manufacturing kit and organic semiconductor manufacturing resist composition |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176A (en) * | 1980-05-31 | 1982-01-05 | Pentel Kk | Water color |
JP2579525B2 (en) * | 1988-04-27 | 1997-02-05 | 日本化薬株式会社 | Water-soluble phthalocyanine compound and method for coloring substrate surface film using the same |
JPH05202228A (en) * | 1991-07-16 | 1993-08-10 | Tosoh Corp | Leveling material and leveling method |
JP3263219B2 (en) * | 1993-12-26 | 2002-03-04 | 東洋紙業株式会社 | Image forming method of water-based paint |
JPH0834923A (en) * | 1994-07-21 | 1996-02-06 | Sekisui Chem Co Ltd | Black photosensitive resin composition and manufacture of black matrix |
JPH09111087A (en) * | 1995-10-17 | 1997-04-28 | Tokyo Ohka Kogyo Co Ltd | Water-soluble photosensitive composition and formation of shaded image using the same |
JP3393979B2 (en) * | 1997-07-01 | 2003-04-07 | 松下電器産業株式会社 | Image display panel, image display device, projection display device and viewfinder using the same |
JPH10268126A (en) * | 1997-03-27 | 1998-10-09 | Canon Inc | Color filter substrate, its manufacture, and liquid crystal element using the substrate |
JPH1161021A (en) * | 1997-08-18 | 1999-03-05 | Ricoh Co Ltd | Aqueous ink for ink-jet recording and recording method using this ink |
JP3757408B2 (en) * | 1997-10-09 | 2006-03-22 | Jsr株式会社 | Cured film, film for electronic parts and manufacturing method thereof |
JP3915201B2 (en) * | 1997-11-11 | 2007-05-16 | 三菱化学株式会社 | Light-shielding photosensitive resin composition and color filter using the same |
JP2000326623A (en) * | 1999-05-19 | 2000-11-28 | Oji Paper Co Ltd | Ink jet recording medium and method for recording |
JP2001108815A (en) * | 1999-10-07 | 2001-04-20 | Toppan Printing Co Ltd | Color filter and its production method |
TWI242103B (en) * | 2001-08-23 | 2005-10-21 | Nippon Kayaku Kk | Negative type colored photosensitive composition |
JP2004238504A (en) * | 2003-02-06 | 2004-08-26 | Mitsubishi Materials Corp | Light absorption material and its formation composition |
JP2003313217A (en) * | 2002-04-24 | 2003-11-06 | Fujifilm Arch Co Ltd | Light curable composition and color filter using the same |
DE60304397T2 (en) * | 2002-06-12 | 2007-03-08 | Nippon Shokubai Co. Ltd. | Phthalocyanine compound, near infrared absorbing dyes and heat ray shielding |
JP2004221562A (en) * | 2002-12-26 | 2004-08-05 | Konica Minolta Holdings Inc | Process for fabricating organic thin film transistor element, organic thin film transistor element fabricated by that process, and organic thin film transistor element sheet |
JP2004281623A (en) * | 2003-03-14 | 2004-10-07 | Konica Minolta Holdings Inc | Thin film transistor element sheet and its producing process |
KR101042667B1 (en) * | 2004-07-05 | 2011-06-20 | 주식회사 동진쎄미켐 | Photoresist composition |
KR101119818B1 (en) * | 2004-12-07 | 2012-03-06 | 주식회사 동진쎄미켐 | Photoresist composition for colour filter and preparation method of liquid crystal display colour filter using the same |
JP2006253305A (en) * | 2005-03-09 | 2006-09-21 | Mitsubishi Chemicals Corp | Field effect transistor and its manufacturing method, and organic semiconductor material |
-
2007
- 2007-06-07 KR KR20070055699A patent/KR101482652B1/en active IP Right Grant
-
2008
- 2008-06-06 TW TW097121155A patent/TWI455976B/en active
- 2008-06-06 JP JP2008148693A patent/JP5538689B2/en active Active
- 2008-06-10 CN CN2008101101076A patent/CN101319092B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101319092A (en) | 2008-12-10 |
TWI455976B (en) | 2014-10-11 |
KR20080107661A (en) | 2008-12-11 |
JP2008306188A (en) | 2008-12-18 |
KR101482652B1 (en) | 2015-01-16 |
JP5538689B2 (en) | 2014-07-02 |
CN101319092B (en) | 2013-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9732253B2 (en) | Polyimide precursor, polyimide, and coating solution for under layer film for image formation | |
US20120153285A1 (en) | Solution processable passivation layers for organic electronic devices | |
TWI500702B (en) | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof | |
US10032920B2 (en) | Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same | |
US8623745B2 (en) | Composition for forming gate insulating film for thin-film transistor | |
KR101439538B1 (en) | Composition for forming Passivation layer and Organic thin film transistor comprising Passivation layer | |
TW200909502A (en) | Water soluble resin composition having a light-shielding property | |
TW201337463A (en) | Chemically amplified positive-imageable, high photo-sensitive organic insulator composition with high thermal stability and method of forming organic insulator using thereof | |
US20220123241A1 (en) | Preparation and layer | |
KR20100059440A (en) | Ink composition for roll printing process and method of fabricating pattern on substrate thereby | |
JP6143698B2 (en) | Wiring pattern forming method, organic transistor manufacturing method, and organic transistor | |
Itoh et al. | Excimer-laser micropatterned photobleaching as a means of isolating polymer electronic devices | |
TW201015215A (en) | Composition for forming photosensitive dielectric material and application thereof | |
KR101804046B1 (en) | Method for improving the molecular crystalline order in thin polythiophene films by marginal solvent treatment | |
Yoon et al. | Facile photo-patterning of source and drain electrodes with photo-sensitive polyimide for organic thin-film transistors | |
TW202214721A (en) | High refractive index materials | |
KR102367555B1 (en) | Negative photosenstive siloxane composition | |
KR20070022455A (en) | Composition for spinless coating | |
Jeong et al. | Optimization of the patterning processing and electrical characteristics of a photopatternable organosiloxane-based gate dielectric for organic thin-film transistors |