200909133 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用於化學機械研磨設備之清潔 裝置，尤其是，一種用於化學機械研磨設備之清潔裝置，、 其移除包括漿料顆粒等產生於進行化學機械研磨操作之 研磨設備之研磨墊中之不同性質物質，所以可以避免 之釗葙。 5 10 15200909133 IX. Description of the Invention: [Technical Field] The present invention relates to a cleaning device for a chemical mechanical polishing device, and more particularly to a cleaning device for a chemical mechanical polishing device, the removal thereof comprising a slurry Particles and the like are produced in different properties in the polishing pad of the polishing apparatus for chemical mechanical polishing operation, so that it can be avoided. 5 10 15
【先前技術】 -般來說’半導體元件之生產需進行不同之製造製 程，例如於矽晶圓中，需進行一沈積製程、一黃光製程、 一姓刻製程以及一離子植入製程。 、 舉例來說，於製造製程中矽晶圓具有不同的製程爲 別’以及-選擇性移除及圖案化此些製程層，然後於進^ 之製程層別之表面上沈積另外的製程層。 此製程層可為絕緣層、問極氧化層、導電層、以及 屬或玻璃層等。 在此，執行於晶圓上之最上表面之製程層是以平面為 杈佳，而允許後續之製程層沈積於其上。 因此，一石夕晶圓經由-研磨製程而將一已完成之製程 層研磨為Μ ’而使後續之製料安全地於其上進行。 特別是，-晶圓研磨製程可作為—使晶圓表面平坦化 2程。其代表例為-化學機械研磨/平坦化製程（cMp)， 八 <匕予漿料供給於-研磨墊上以使其與晶圓之表面 20 200909133 摩擦接觸，且於晶圓之一表面壓於研磨墊上之狀態下，晶 圓與研磨墊進行相互相對的摩擦移動而安全地平坦化晶 圓之表面。 此時，如上所述，一進行CMP之設備已經揭露於韓 5國專利號490266中，其是以本案申請人之名義申請。 圖1為習知CMP設備之示意圖。請參閱圖丨，此習知 之CMP設借可包括-平台1〇，其上一研磨塾使表面接觸 於晶圓之表面，所以使其對固定的晶圓之表面物理摩擦， 一研磨頭20,其固持一晶圓且將晶圓向下壓於研磨墊u 10上，當持有晶圓之研磨頭20向研磨墊11壓下時，一軸心 3〇旋轉研磨頭20,以及一裝載單元4〇，裝載欲研磨之晶 圓到研磨頭20，或是研磨之後將晶圓取出。 此裝载單元40,晶圓是置於一設置於裝載杯41最上 部之裝載平台42之上表面上，用以支撑裝載平台，且介 15於裝載平台42與研磨頭2G之間的晶圓被他們彼此相對的 持有或分開，P連接於|載杯41之手臂44沿旋轉轴Μ 向研磨頭20旋轉且上下移動。 此時，此結構之外’在習知CMP設傷具有之缺點是 包含漿料粒子的不同性質之物質等，其於研磨一晶圓時產 2〇生：围積於研磨塾11之溝槽中，所以於晶圓中產生到痕， 或是縮短研磨墊11之壽命。 所以，習知CMP設備可能更包括一移除包含漿料粒 子之不同性質物質之清潔裝置於研磨墊n上。 舉例來說’―清潔裝置配裝在#心30之較低的表面， 200909133 因軸心30之轉動，於旋研磨墊11上沿著研磨頭2〇 動。此清«纽射清潔液，例如去離子水切純水 於研磨墊Π上，而移除不同性質之物質，包’ 上之漿料顆粒。 # & u 然而，習知CMP設備之清潔裝置僅以注射清潔液之 早-方式’其移除毀料物f或不同性質之物質的速率是低 的，所以無法避免晶圓到痕及使得研磨墊壽命減短。 再者，在習知的CMP設備中，當進行研磨製程時， 10 因摩擦力而於研磨墊中產生摩擦熱，所以研磨墊具有 溫度。 【發明内容】 口此本發明致力於解決上述發生於習知技術之問 題，且本發明之一目的係提供用於CMp設備之清潔裝置， 15於研磨墊充分地移除包含漿料顆粒之不同性質之物質。 再者，本發明之另一目的係提供一用於設備之清潔裝 置，其妥善處理當進行研磨製程時產生於研磨墊之摩擦 熱。 技術手段 為達到上述目的’在此提供一用於CMP設備之清潔 裝置’包括有：一不旋轉之中心軸，其非旋轉地連接到一 旋轉之軸心，該不旋轉之中心軸包括有一第一通道及一第 一通道’其形成於該不旋轉之中心軸之内部，清潔液流進 該第一通道，且壓縮氣體流進該第二通道；以及一連接至 200909133 該軸心之喷嘴體’其可沿著一研磨塾上之該不旋轉之中心 轴旋轉、，該喷嘴體混合由該第一通道所提供之清潔液與由 4第一通道所提供之壓縮氣體而產生雙流體，且以壓力注 射該混合產生之雙流體至該研磨墊上。 5 【實施方式】 下文中，配合附圖詳細說明根據本發明之一示例性之 貫加例。再者，本技術技術領域中將可理解的，於本發明 之範疇内，可進行形式上及細節之各式變化，但本發明之 10 I巳_不限於以上之實施例。圖 < 中，才目同之元件以相同元 件符號標示。 圖2為本發明之一實施例之用於CMp設備之清潔裝 置之立體不意圖，圖3為裝設有本發明之實施例之用於 CMP設備之清潔裝置之CMp設備的剖面示意圖；以及圖 15 4為CMP設備之清潔裝置剖面示意圖，其為圖2之A-A， 之剖面線。 參照圖2至4 ’為根據本發明之一實施例之用於cmp 3又備之清潔裝置包括有：一不旋轉之中心軸1 〇〇，其具有 一第一通道101，其不可旋轉地連接到一軸心300，且清 20 潔液流動於其中，以及一第二通道102，壓縮氣體流動於 其中’且亦包括一噴嘴體200，其連接到軸心300，而沿 著設置於平台400之研磨墊410上之不旋轉之中心軸1〇〇 而轉動’混合經由第一通道1〇1所供給之清潔液及經由第 二通道102所供給之壓縮氣體而產生雙流體，且壓力注射 200909133 此雙流體於研磨塾上41 〇。 不旋轉之中心軸100延伸過軸心300之中心部而連到 軸心300。此不旋轉之中心軸1〇〇為一不旋轉之軸心，與 轴心300之轉動無關。 5 例如’不旋轉之中心軸1〇〇具有一轉動配件（圖未示） 裝置於其連結軸心300之中心部位，所以即使軸心3〇〇為 進行研磨製程而轉動，不旋轉之中心軸1〇〇並不會轉動。 例如’由一分離地驅動源（圖未示）提供轉動力於軸心 300而使其轉動，且具有一不旋轉的殼體31〇,係裝置於 10 其外緣。可裝設一軸承（圖未示）在軸心300與軸心殼體31 〇 相互連接之部位。 再者，軸心300可具有一研磨頭320連接於其較低表 面之一側，其研磨頭320固持一晶圓，壓住並旋轉該晶圓， 且使晶圓與研磨墊410摩擦接觸，且軸心300可連接有一 15 調整頭（conditi〇ning head)(圖未示），其調整頭可重造安裝 於另一側之研磨墊410之表面。 不旋轉之中心軸100裝置於軸心300之較低表面且具 有兩通道形成於其内部，而可供給清潔液及壓縮氣體到繞 軸心旋轉之喷嘴體200。一通道為由一供給源（圖未示）供給 2〇 清潔液（例如去離子水或超純水等）之第一通道1〇1;另一 個為第二通道102，其沿著第一通道101之軸線而形成於 其内部，並由一壓縮氣體供給源（圖未示）供給壓縮氣體。 更詳細地’不旋轉之中心軸1〇〇於其内部具有一雙管 結構，其允許兩種流體彼此分開及分別地流經通道。 200909133 不旋轉之中心軸100具有較低之一端係插入喷嘴體 200之一端，並以此互相連接，且較佳為一轉動配件i2〇 裝設於不旋轉之中心軸1〇〇與噴嘴體2〇〇連接之部位。 如此，轉動配件120設置於不旋轉之中心軸與喷 5 嘴體2〇〇之連接部位，且為一管件連接之典型元件，其使 非旋轉之不旋轉之中心軸1 〇〇與旋轉之喷嘴體2〇〇之間密 封，且可以達到由不旋轉之中心軸i 〇〇至喷嘴體之間 穩疋的供給流體，即使不旋轉之中心軸1 〇〇沒有轉動，喷 嘴體200仍連接並隨著轴心3〇〇 一起轉動。 1〇 此喷嘴體200連接到一軸心300之較低表面，且混合 由不旋轉之中心軸1〇〇所供給之清潔液與壓縮氣體而產生 雙流體。喷嘴體200壓力喷射此雙流體到研磨墊41〇而移 除包含漿料顆粒等之不同性質物質。於此，喷嘴體2〇〇是 一清潔研磨塾410之元件。 15 詳細地，噴嘴體20〇包括有：一第一體210,其經由 第—通道101被供給清潔液，且將清潔液注射到研磨墊41〇 X及第一體220，其經由第二通道i 〇2被供給壓縮 氣體，並將壓縮氣體供給到第一體21〇。 该第一體210具有一清潔液通道211連到不旋轉之中 201〇0之較低之一端，而得以經由第一通道101而被供 給β潔液，且將清潔液注射到研磨墊41〇上。 >第一體200具有一可彎曲的氣體連接管線u〇連接於 不方疋轉之中心軸1〇〇較低一端之第二通道1〇2，而使壓縮 氣體犯夠經由第二通道被供給並流進氣體通道“I。 11 200909133 再者，第二體220之氣體通道221經由氣體連接管線 110供給壓縮氣體至第—體2U)之清潔液通道211，所以 清潔液快速的由第一體2〗〇注射出。 5 10 ' =別是，習知CMP設備之清潔裝置只利用單一方式 庄射/月潔液’所以注射力是弱的。因Λ，移除漿料顆粒或 =同性質之物質等（其產生於研磨墊之溝槽内）的速率 疋低的此時，根據本發明實施例之CMP設備之清潔裝 置，清潔液是藉由Μ縮氣體增壓所以可快速注射，因=確 保不同性質物質之高的移除速率，包括研磨塾㈣上之衆 特別是，雖然乾淨潮濕的空氣可使用為a縮氣體而將 清潔液增壓及快速注射，㈣了在研磨製程巾冷卻研磨塾 41 〇，較佳為使用氮氣作為壓縮氣體。 主詳細地，本實施例敘述使用氮氣為壓縮氣體快速注射 15清潔液之例子，以及使用氮氣為壓縮氣體冷卻研磨塾410 的之例子。 此雖然本實施例中是以氮氣為示例，很容易瞭解 的是，若流體可以增壓清潔液而將其快速注射且可冷卻研 磨墊410’同時不會影響研磨製程，此流體可以取代氮氣。 犯，具體地，當以一研磨頭32〇固定晶圓而進行晶圓研磨 製程時’方疋轉並將其壓下，而進行晶圓與研磨塾摩擦 接觸，此時供給清潔液至第一通道1〇1财斷，且只有氮 氣經由第二通道i 0 2而被供給，所以第一體2 i 〇只有注射 氮氣到研磨塾4H)上，因此而冷卻產生於研磨塾41〇之摩 12 200909133 擦力。 如此*’進行晶圓研磨製程之後，當包括預定量之漿料 顆粒產生於研磨墊410上，上述之喷嘴體200供給清潔液 及壓縮氣體而快速注射清潔液於研磨墊410上，因此移除 5包括聚料顆粒之不同性質物質且清潔研磨頭410。 於上述結構中，第一體210較佳為包括複數的注射開 口 230 ’其具有分別由研磨墊410中心向其半徑方向之相 互涵蓋的注射面積。 因此’當沿著轴心300旋轉時，第一體210快速注射 10清潔液於研磨墊410之半徑方向上之整個區域，因此清潔 了研磨墊410(研磨製程進行處）的全部面積。 再者’第二體220較佳為供給壓縮氣體至注射開口 230,而可以將清潔液快速的由第一體21〇之注射開口 23〇 注射出。 15 雖然本發明之代表性實施例以為解釋之目的而敘 述，本技術領域中之人士，於不背離本發明隨後之申請專 利範圍之精神及範疇下，各式之修改、附加及取代是可能 的。 20 產業利用性 如上所述，本發明中加壓清潔液以快速將其注射於研 磨墊，而可完全移除研磨墊上之漿料顆粒及不同性質物 質。再者，可以避免晶圓之刮痕產生，也可提高研磨墊之 舞命。 25 同時，即使當噴嘴體沿著軸心旋轉時，本發明亦穩定 13 200909133 地由不旋轉之中心軸向喷嘴體供給清潔液及壓縮氣體。 再者，於晶圓研磨製程中，本發明可停止提供清嚟 液，使僅有壓縮氣體注射至研磨墊上，因此可以冷卻^磨' 塾0 【圖式簡單說明】 本發明之上述及其他目的、特徵及優點，藉由配合附 圖及以下詳細之說明將可更清楚，其中： 圖1為習知技術之CMP設備之結構示意圖。 圖2為本發明之一實施例之CMp設備之清潔裝置之 立體示意圖。 圖3為本發明之一實施例之配置有CMP設備之清潔 裝置之CMP設備之剖面示意圖。 圖4為沿著圖2之A_A’剖面線之CMP設備之清潔裝 15 置之剖面示意圖。 【主要元件符號說明】 v 10平台 43旋轉轴 11研磨墊 44手臂 20 2 0研磨頭 100不旋轉之中心轴 30轴心 101第一通道 40装載單元 102第二通道 41裝載杯 110氣體連接管線 42裝載平台 200喷嘴體 200909133 210第一體 211清潔液通道 220第二體 221氣體通道 5 230注射開口 300轴心 310殼體 320研磨頭 400平台 410研磨墊 A，A’剖面線 15[Prior Art] - Generally speaking, the production of semiconductor components requires different manufacturing processes, for example, in a germanium wafer, a deposition process, a yellow process, a process of etching, and an ion implantation process are required. For example, in the manufacturing process, the wafers have different processes, and the process layers are selectively removed and patterned, and then additional process layers are deposited on the surface of the process layer. The process layer may be an insulating layer, a polarity oxide layer, a conductive layer, and a genus or glass layer. Here, the process layer performed on the uppermost surface on the wafer is preferably a planar surface, and a subsequent process layer is allowed to be deposited thereon. Therefore, a ruthenium wafer is ground to a ’' by a grinding process to allow subsequent material to be safely carried out. In particular, the wafer polishing process can be used to flatten the wafer surface by two passes. A representative example is a chemical mechanical polishing/planarization process (cMp), and a slurry is supplied to the polishing pad to be in frictional contact with the surface 20200909133 of the wafer, and is pressed against one surface of the wafer. In the state of the polishing pad, the wafer and the polishing pad are frictionally moved relative to each other to safely planarize the surface of the wafer. At this time, as described above, a device for performing CMP has been disclosed in Korean Patent No. 490266, which is filed in the name of the applicant of the present application. Figure 1 is a schematic illustration of a conventional CMP apparatus. Referring to the figure, the conventional CMP device may include a platform 1 , the upper surface of which is brought into contact with the surface of the wafer so that it physically rubs against the surface of the fixed wafer, a polishing head 20, Holding a wafer and pressing the wafer down on the polishing pad u 10, when the polishing head 20 holding the wafer is pressed down to the polishing pad 11, a shaft 3 rotates the polishing head 20, and a loading unit 4〇, load the wafer to be polished to the polishing head 20, or remove the wafer after grinding. The loading unit 40 is disposed on a surface of an upper surface of the loading platform 42 disposed on the uppermost portion of the loading cup 41 for supporting the loading platform, and the wafer between the loading platform 42 and the polishing head 2G. They are held or separated from each other, and the arm 44 connected to the carrier cup 41 is rotated toward the polishing head 20 along the rotation axis and moved up and down. At this time, in addition to this structure, the conventional CMP injury has the disadvantage that it contains substances of different properties of the slurry particles, etc., which are produced when polishing a wafer: a groove surrounding the polishing crucible 11 Therefore, a mark is generated in the wafer, or the life of the polishing pad 11 is shortened. Therefore, the conventional CMP apparatus may further include a cleaning device for removing the different properties of the material containing the slurry particles on the polishing pad n. For example, the cleaning device is mounted on the lower surface of the #心30, and 200909133 is moved along the polishing head 2 on the rotary polishing pad 11 due to the rotation of the axis 30. This cleaning liquid, such as deionized water, cuts pure water onto the polishing pad and removes the slurry particles of different nature. # & u However, the cleaning device of the conventional CMP device only uses the early-injection method of the cleaning liquid to reduce the rate of the substance f or the substance of different nature, so that the wafer is not scratched and the The life of the polishing pad is shortened. Further, in the conventional CMP apparatus, when the polishing process is performed, 10 frictional heat is generated in the polishing pad due to the frictional force, so the polishing pad has a temperature. SUMMARY OF THE INVENTION The present invention is directed to solving the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a cleaning device for a CMp device, 15 which substantially removes particles containing slurry from the polishing pad. The substance of nature. Further, another object of the present invention is to provide a cleaning apparatus for a device which properly handles the frictional heat generated in the polishing pad when the polishing process is performed. Technical means for achieving the above object 'providing a cleaning device for a CMP apparatus' includes: a non-rotating central shaft non-rotatably coupled to a rotating shaft, the non-rotating central shaft including a first a passage and a first passage 'which are formed inside the non-rotating central shaft, a cleaning liquid flows into the first passage, and a compressed gas flows into the second passage; and a nozzle body connected to the shaft center of 200009133 'which is rotatable along the non-rotating central axis of a grinding bowl that mixes the cleaning fluid provided by the first passage with the compressed gas provided by the first passage to produce a two-fluid, and The two fluids produced by the mixing are injected under pressure onto the polishing pad. [Embodiment] Hereinafter, an exemplary addition according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Further, it will be understood that various changes in form and details may be made within the scope of the present invention, but the present invention is not limited to the above embodiments. In the figure <, the same components are denoted by the same element symbol. 2 is a perspective view of a cleaning device for a CMp device according to an embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view of a CMp device equipped with a cleaning device for a CMP device according to an embodiment of the present invention; 15 4 is a schematic cross-sectional view of a cleaning device of the CMP apparatus, which is a cross-section of AA of FIG. 2 . 2 to 4', a cleaning apparatus for cmp 3 according to an embodiment of the present invention includes: a non-rotating central shaft 1 〇〇 having a first passage 101 that is non-rotatably connected To a shaft 300, and the cleaning liquid flows therein, and a second passage 102, the compressed gas flows therein' and also includes a nozzle body 200 connected to the shaft 300 and disposed along the platform 400 The non-rotating central axis of the polishing pad 410 rotates and 'mixes the cleaning liquid supplied through the first passage 1〇1 and the compressed gas supplied through the second passage 102 to generate a two-fluid, and the pressure injection 200909133 This two-fluid is 41 〇 on the grinding crucible. The central shaft 100 that does not rotate extends over the center of the shaft center 300 and is coupled to the shaft center 300. The central axis 1〇〇, which is not rotated, is an axis that does not rotate, regardless of the rotation of the axis 300. 5 For example, 'the central shaft 1不 that does not rotate has a rotating fitting (not shown) attached to the center of the connecting shaft 300, so even if the shaft 3〇〇 is rotated for the grinding process, the central shaft that does not rotate 1〇〇 does not turn. For example, a separate driving source (not shown) provides a rotational force to the shaft 300 to rotate it, and has a housing 31 that does not rotate, and is attached to its outer edge. A bearing (not shown) may be provided at a portion where the shaft center 300 and the shaft housing 31 相互 are connected to each other. Furthermore, the shaft 300 can have a polishing head 320 attached to one side of its lower surface, and the polishing head 320 holds a wafer, presses and rotates the wafer, and frictionally contacts the wafer with the polishing pad 410. And the shaft 300 can be connected with a 15 (conditi〇ning head) (not shown), and the adjusting head can be reworked on the surface of the polishing pad 410 on the other side. The non-rotating center shaft 100 is disposed on the lower surface of the shaft 300 and has two passages formed therein, and supplies the cleaning liquid and the compressed gas to the nozzle body 200 that rotates around the shaft center. One channel is a first channel 1〇1 for supplying 2〇 cleaning liquid (such as deionized water or ultrapure water, etc.) by a supply source (not shown); the other is a second channel 102 along the first channel The axis of 101 is formed inside thereof, and a compressed gas is supplied from a compressed gas supply source (not shown). More specifically, the 'non-rotating central shaft 1' has a double tube structure inside it which allows the two fluids to flow apart from each other and separately through the passage. 200909133 The central shaft 100 that does not rotate has one lower end inserted into one end of the nozzle body 200, and is connected to each other, and preferably a rotating fitting i2 is mounted on the central shaft 1〇〇 and the nozzle body 2 that are not rotating. 〇〇 Connected parts. In this way, the rotating fitting 120 is disposed at a joint portion between the central shaft that is not rotating and the nozzle body 2, and is a typical component of a pipe joint, which makes the non-rotating non-rotating central shaft 1 旋转 and the rotating nozzle The body 2 密封 seals and can reach a stable supply fluid from the central axis i 不 without rotation to the nozzle body, even if the central shaft 1 不 without rotation does not rotate, the nozzle body 200 is still connected and The shaft 3 turns together. 1喷嘴 The nozzle body 200 is coupled to the lower surface of a shaft center 300, and mixes the cleaning liquid supplied by the non-rotating center shaft 1〇〇 with the compressed gas to generate a two-fluid. The nozzle body 200 pressure-sprays the two fluids to the polishing pad 41 to remove substances of different properties including slurry particles and the like. Here, the nozzle body 2 is an element for cleaning the polishing crucible 410. 15 In detail, the nozzle body 20 includes: a first body 210 that is supplied with cleaning liquid via the first passage 101, and injects the cleaning liquid into the polishing pad 41〇X and the first body 220 via the second passage i 〇 2 is supplied with a compressed gas, and the compressed gas is supplied to the first body 21 〇. The first body 210 has a cleaning liquid passage 211 connected to the lower end of the non-rotating 201〇0, and is supplied with the β cleaning liquid via the first passage 101, and the cleaning liquid is injected into the polishing pad 41〇. on. > The first body 200 has a bendable gas connection line u〇 connected to the second channel 1〇2 of the lower end of the central axis 1〇〇 of the untwisted, so that the compressed gas is guilty enough to be Supply and flow into the gas passage "I. 11 200909133 Furthermore, the gas passage 221 of the second body 220 supplies the compressed gas to the cleaning liquid passage 211 of the first body 2U via the gas connecting line 110, so the cleaning liquid is quickly made by the first Body 2〗 〇 Injection. 5 10 ' = No, the cleaning device of the conventional CMP equipment uses only a single method of smear / moon cleaning solution' so the injection force is weak. Because Λ, remove the slurry particles or = same At this time, the rate of the substance or the like (which is generated in the groove of the polishing pad) is low. According to the cleaning device of the CMP apparatus according to the embodiment of the present invention, the cleaning liquid is pressurized by the contraction gas, so that the injection can be performed quickly. Because = to ensure the high removal rate of different substances, including the grinding 塾 (4) especially, although clean and humid air can be used as a gas to pressurize the cleaning liquid and rapid injection, (d) in the polishing process towel Cooling 塾41 〇, preferably Nitrogen is used as the compressed gas. In detail, this embodiment describes an example in which nitrogen is used as a compressed gas to rapidly inject 15 cleaning liquid, and an example in which nitrogen is used as a compressed gas to cool the polishing crucible 410. Although this embodiment is a nitrogen gas. By way of example, it is readily understood that if the fluid can be pressurized with a cleaning solution and can be quickly injected and the polishing pad 410 can be cooled without affecting the grinding process, the fluid can replace the nitrogen. In particular, when grinding When the wafer is fixed and the wafer is polished, the wafer is rubbed and rubbed, and the wafer is rubbed into contact with the polishing crucible. At this time, the cleaning liquid is supplied to the first channel, and only Nitrogen gas is supplied via the second passage i 0 2 , so the first body 2 i 〇 only injects nitrogen gas onto the grinding crucible 4H), so the cooling is generated by the rubbing force of the grinding crucible 41 200909133. After the round grinding process, when a predetermined amount of slurry particles are generated on the polishing pad 410, the nozzle body 200 supplies the cleaning liquid and the compressed gas to quickly inject the cleaning liquid onto the polishing pad 410. Therefore, the removal 5 includes different properties of the granules and cleans the polishing head 410. In the above structure, the first body 210 preferably includes a plurality of injection openings 230' having their respective radial directions from the center of the polishing pad 410. The injection area covered by each other. Therefore, when rotating along the axis 300, the first body 210 quickly injects 10 cleaning liquid into the entire area in the radial direction of the polishing pad 410, thus cleaning the polishing pad 410 (where the polishing process is performed) The entire area of the second body 220 is preferably supplied with compressed gas to the injection opening 230, and the cleaning liquid can be quickly injected from the injection opening 23 of the first body 21〇. 15 Although representative of the present invention The embodiments are described for the purpose of explanation, and modifications, additions and substitutions of the various types are possible without departing from the spirit and scope of the appended claims. 20 Industrial Applicability As described above, in the present invention, the pressurized cleaning liquid is quickly injected into the polishing pad, and the slurry particles and the different properties on the polishing pad can be completely removed. Furthermore, scratching of the wafer can be avoided, and the polishing pad can be improved. At the same time, the present invention is stable even when the nozzle body is rotated along the axis. 13 200909133 The cleaning fluid and the compressed gas are supplied from the central axial nozzle body which is not rotated. Furthermore, in the wafer polishing process, the present invention can stop providing the cleaning liquid so that only the compressed gas is injected onto the polishing pad, so that the cooling can be performed. 【0 [Simple description of the drawing] The above and other objects of the present invention BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a conventional CMP apparatus according to the accompanying drawings and the following detailed description. Figure 2 is a perspective view of a cleaning device for a CMp device according to an embodiment of the present invention. Figure 3 is a cross-sectional view showing a CMP apparatus equipped with a cleaning device for a CMP apparatus according to an embodiment of the present invention. Figure 4 is a cross-sectional view of the cleaning apparatus of the CMP apparatus taken along line AA of Figure 2; [Main component symbol description] v 10 platform 43 rotating shaft 11 polishing pad 44 arm 20 2 0 grinding head 100 non-rotating central shaft 30 shaft 101 first passage 40 loading unit 102 second passage 41 loading cup 110 gas connecting line 42 loading platform 200 nozzle body 200909133 210 first body 211 cleaning liquid channel 220 second body 221 gas channel 5 230 injection opening 300 axis 310 housing 320 grinding head 400 platform 410 polishing pad A, A' section line 15