200908366 CHIPO„.〇9BTW72.31 種邊射型發光 九、發明說明： 【發明所屬之技術領域】 本發明為一種發光二極體之結構，特別為 二極體之結構。 … 【先前技術】 近年來，發光二極體的製造技術不斷進步， 體的發光效率逐漸提升，也不斷的增加發 ^先一極 域。目前在發光二極體的製造技術中 玉2的領 向不同’分為頂射型及邊射型⑽一二 應用領域，選用適當的發光二極體類型。 了根據不同 知邊射型發光二極體結構卻具有在較小的出光角 光叫此缺點使得應用習知邊射型發光二極體之 先It體=背光模組中時’因為部份光線㈣ 才、漏出，而使得背光模組需要較長的混光距離， 也:法減I:::均勻度’所以無法有效減少背光模組的厚度， 也無法減麵背光模組的重量。 第IB 知邊射型發光二極體結構1G之剖面示意圖。 射轉1' M圖中A區域之局部放大圖。第2圖為習知邊 射支^二極體結構1Q之出光角度與相對光強度分佈圖。 枯.欲、1A圖所示，習知邊射型發光二極體之結構10係包 、嘉刑土光—極體光源11 ’·以及—邊射型光學透鏡12。其中 以及」二：透鏡12包括：-入光面121 ; -第-反射面122 ; 折射面123。入光面121係貼近發光二極體光源 200908366 11 ’用以麵合發光二極體光源11所發出之光線，而第-反射 面122具有一 V形截®，使入射至第一反射面122之光線反 射又第才斤射面123之截面為一向外凸出之凸形，並且第一 折射面⑵之端部分別與第一反射面⑵及入光面⑵連接， 用以使^射至第一折射面123之光線折射出光。 〃如第1B圖所不’雖'然第—反射φ 122可將部份光線反射 至第i射面123，再由第一折射面123將光線折射出邊射型 光子透鏡12’但實際上仍有大部份光線會直接由第一反射面 ⑵折射出邊射型光學透冑12，進而使得習知邊射型發光二極 體結構ω在較小的出光角度的光強度無法進—步下降。 曰如第2圖所不’其係使用光感測器在出光角度g度至例 度量測習知之邊射型發光二極體結構1〇之光強度，其中出光 角度〇度係定義在邊射型光學透鏡12之中央軸124上。將最 大光強度定義為1，而出光角度介於〇度至±40度之間時，其 相對光強度皆約大於0.28。由此可知，習知邊射型發光二極體 二構ίο中央的光強度過高，所以無法有效應m邊射型發 光-極體結構10於背光模組中，因此如何降低邊射型發光二 極體結構在較小出光角度的光強度為目前需加強改進之x目標。 【發明内容】 為解決邊射型發光二極體結構在較小的出光角度的光強 度無法有效減少之問題，本發明藉由將第二反射面設=為一 成有一第一夹角’第一失角係為第二反射面與邊射型 先予透鏡之中央轴間的夾角’又第一夹角之大小係介於10产 200908366 CI!IPO_096TW?231 至60度之間，藉此使得大部分入射至第二反射面之光線能被 全反射，進而降低邊射型發光二極體結構在較小的出光角度的 光強度。 為達上述目的，本發明係提供一種邊射型發光二極體之結 構，包括：一發光二極體光源；以及一邊射型光學透鏡，其中 邊射型光學透鏡具有一第二反射面，第二反射面為一圓錐面， 並形成有一第一夾角，其特徵在於第一夾角之大小係介於10 度至60度之間。 為達上述目的，本發明又提供一種邊射型光學透鏡結構， 其包括：一入光面；一第二反射面；以及一第二折射面，其中 第二反射面為一圓錐面，並形成有一第一夾角，其特徵在於第 一夾角之大小係介於10度至60度之間。 藉由本發明的實施，至少可以達到下列之進步功效： 一、 降低邊射型發光二極體結構在較小的出光角度的光強度。 二、 應用本發明之邊射型發光二極體結構於背光模組中，得以 有效降低背光模組之厚度。 為了使任何熟習相關技藝者了解本發明之技術内容並據 以實施，且根據本說明書所揭露之内容、申請專利範圍及圖 式，任何熟習相關技藝者可輕易地理解本發明相關之目的及優 點，因此將在實施方式中詳細敘述本發明之詳細特徵以及優 【實施方式】 第3A圖為本發明之一種邊射型發光二極體結構之第一態 200908366 CHIP0JJ96TW72-31 樣20剖視實施例圖。第3B圖為第3A圖中B區域之局部放大 圖。第4圖為本發明之一種邊射型發光二極體結構之第一態樣 20之出光角度與相對光強度分佈圖。第5A圖為本發明之一種 邊射型發光二極體結構之第二態樣21剖視實施例圖。第5B圖 為第5A圖中C區域之局部放大圖。第6圖為本發明之一種邊 射型發光二極體結構之第二態樣21之出光角度與相對光強度 分佈圖。第7A圖係為本發明之一種邊射型發光二極體結構之 第三態樣22剖視實施例圖。第7B圖為第7A圖中D區域之局 部放大圖。第8A圖為本發明之一種邊射型發光二極體結構之 第四態樣23剖視實施例圖。第8B圖為第8A圖中E區域之局 部放大圖。第9圖為三種邊射型發光二極體結構10、20、21 之出光角度與相對光強度分佈比較圖。 如第3A圖所示，本實施例為一種邊射型發光二極體之結 構20，包括：一發光二極體光源11 ;以及一邊射型光學透鏡 24 ° 發光二極體光源11，係位於邊射型光學透鏡24之一中央 軸241的延長線上，可使得由發光二極體光源11發出之光線 平均入射邊射型光學透鏡24中。發光二極體光源11可以為一 發光二極體晶片、一塗佈有螢光粉之發光二極體、或一具有透 鏡之發光二極體。 邊射型光學透鏡24，其包括：一入光面242 ; —第二反射 面243 ;以及一第二折射面244。邊射型光學透鏡24係以中央 軸241旋轉對稱，又因為發光二極體光源Π位於中央軸241 之延長線上，所以邊射型發光二極體結構20之光強度大小亦 200908366200908366 CHIPO„.〇9BTW72.31 kind of edge-emitting type illumination 9. Description of the invention: [Technical field of the invention] The invention relates to a structure of a light-emitting diode, in particular to a structure of a diode. [Prior Art] In the coming, the manufacturing technology of the light-emitting diodes has been continuously improved, and the luminous efficiency of the body has gradually increased, and the first-polar field has been continuously increased. At present, in the manufacturing technology of the light-emitting diode, the orientation of the jade 2 is different. In the field of shot type and edge shot type (10), the appropriate type of light-emitting diode is selected. According to different light-emitting diode structures, the light has a small exit angle, which makes the application of the known side. The first type of the emitter type LED is in the backlight module. 'Because part of the light (4) is leaked out, the backlight module needs a long light mixing distance. Also: method subtraction I::: uniformity' Therefore, the thickness of the backlight module cannot be effectively reduced, and the weight of the backlight module cannot be reduced. The cross-sectional view of the IB-shaped edge-emitting diode structure 1G is a partial enlarged view of the A region in the 1' M image. Figure 2 shows the conventional side shot The light exit angle and the relative light intensity distribution of the branched diode structure 1Q. As shown in Fig. 1A, the structure of the conventional edge-emitting type light-emitting diode is 10 series, and the Jiaji Earthlight-polar body light source 11 '· and the edge-emitting optical lens 12. Among them and the second: the lens 12 includes: a light-incident surface 121; a first-reflecting surface 122; and a refractive surface 123. The light incident surface 121 is adjacent to the light emitting diode light source 200908366 11 'to face the light emitted by the light emitting diode light source 11 , and the first reflecting surface 122 has a V-shaped cut surface to be incident on the first reflective surface 122 . The light reflecting surface of the first reflecting surface 123 is a convex shape protruding outward, and the ends of the first refractive surface (2) are respectively connected with the first reflecting surface (2) and the light incident surface (2), so as to be The light of the first refractive surface 123 refracts light. For example, in FIG. 1B, although the first reflection φ 122 can reflect part of the light to the ith plane 123, the first refracting surface 123 refracts the light out of the edge-emitting photonic lens 12'. Most of the light is directly reflected by the first reflecting surface (2) to the edge-emitting optical lens 12, so that the light intensity of the conventional edge-emitting LED structure ω at a small light-emitting angle cannot be advanced. decline. For example, in Figure 2, the light intensity of the light-emitting diode structure is measured by the light sensor at the light-emitting angle g degree to the example. The central axis 124 of the optical lens 12 is formed. The maximum light intensity is defined as 1, and the relative light intensity is greater than about 0.28 when the light exit angle is between ±40 degrees. Therefore, it can be seen that the light intensity of the center of the side-emitting type light-emitting diode is too high, so that there is no effect of the m-side type light-emitting body structure 10 in the backlight module, so how to reduce the edge-emitting type light emission The light intensity of the diode structure at a small exit angle is currently an x target that needs to be improved. SUMMARY OF THE INVENTION In order to solve the problem that the light intensity of the edge-emitting type LED structure at a small light-emitting angle cannot be effectively reduced, the present invention sets the second reflection surface to have a first angle. A corner angle is the angle between the second reflecting surface and the central axis of the edge-emitting type lens. The first angle is between 10,200,908,366 CI!IPO_096TW?231 to 60 degrees. Most of the light incident on the second reflecting surface can be totally reflected, thereby reducing the light intensity of the edge-emitting LED structure at a small exit angle. In order to achieve the above object, the present invention provides a structure of a side-emitting type light emitting diode, comprising: a light emitting diode light source; and a side beam type optical lens, wherein the edge emitting type optical lens has a second reflecting surface, The two reflecting surfaces are a conical surface and are formed with a first angle, wherein the first angle is between 10 degrees and 60 degrees. In order to achieve the above object, the present invention further provides an edge-emitting optical lens structure, comprising: a light incident surface; a second reflective surface; and a second refractive surface, wherein the second reflective surface is a conical surface, and is formed There is a first angle, characterized in that the first angle is between 10 degrees and 60 degrees. By the implementation of the present invention, at least the following advancements can be achieved: 1. The light intensity of the edge-emitting type LED structure at a small exit angle is reduced. 2. The edge-emitting type LED structure of the present invention is applied to the backlight module to effectively reduce the thickness of the backlight module. In order to make those skilled in the art understand the technical content of the present invention and implement it, and according to the disclosure, the patent scope and the drawings, the related objects and advantages of the present invention can be easily understood by those skilled in the art. Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments. FIG. 3A is a first embodiment of a side-emitting type light emitting diode structure of the present invention. 200908366 CHIP0JJ96TW72-31 Figure. Fig. 3B is a partial enlarged view of the B region in Fig. 3A. Figure 4 is a diagram showing the light exit angle and relative light intensity distribution of the first aspect 20 of the edge-emitting type LED structure of the present invention. Fig. 5A is a cross-sectional view showing a second aspect of the side-emitting type LED structure of the present invention. Fig. 5B is a partial enlarged view of the C area in Fig. 5A. Fig. 6 is a view showing the distribution angle and relative light intensity distribution of the second aspect 21 of the side-emitting light-emitting diode structure of the present invention. Fig. 7A is a cross-sectional view showing a third aspect of the side-emitting type LED structure of the present invention. Fig. 7B is an enlarged view of a portion of the D area in Fig. 7A. Fig. 8A is a cross-sectional view showing a fourth embodiment of a side-emitting type LED structure according to the present invention. Fig. 8B is an enlarged view of a portion of the E area in Fig. 8A. Figure 9 is a comparison of the light extraction angle and relative light intensity distribution of the three side-emitting LED structures 10, 20, and 21. As shown in FIG. 3A, the present embodiment is a structure 20 of a side-emitting type LED, comprising: a light-emitting diode light source 11; and a side-emitting optical lens 24 ° light-emitting diode light source 11, which is located at The extension line of the central axis 241 of one of the edge-emitting optical lenses 24 allows the light emitted from the light-emitting diode light source 11 to be incident on the edge-emitting optical lens 24 on average. The light-emitting diode light source 11 may be a light-emitting diode wafer, a light-emitting diode coated with phosphor powder, or a light-emitting diode having a lens. The edge-emitting optical lens 24 includes: a light incident surface 242; a second reflective surface 243; and a second refractive surface 244. The edge-emitting optical lens 24 is rotationally symmetrical with respect to the central axis 241, and since the light-emitting diode light source Π is located on the extension line of the central axis 241, the light intensity of the edge-emitting LED structure 20 is also 200908366.
CiIiFO_096Tf72：H 對稱於中央轴241分佈。 入光面242,為垂直於中央軸241之一平面，其用以貼近 發光二極體光源11，以耦合發光二極體光源11發出之光線進 入邊射型光學透鏡24。 第二反射面243，其為一圓錐面，並與中央軸241形成有 一第一夾角01，並且第一夾角01之大小係介於1〇度至60 度之間，第二反射面243可改變入射之光線的行進方向’並且 使其全反射。如第3B圖所示，由發光二極體光源11發出之光 線，入射至第二反射面243時，因為光線入射至第二反射面243 的入射角大於臨界角，所以使得入射之光線被全反射。 為了使發光二極體光源11發出之大部分的光線皆入射至 第二反射面243 ’所以將第二反射面243之開口設計成大於或 等於發光二極體光源11之一第一表面大小’第一表面係為發 光二極體光源11面向入光面242之表面，因為第二反射面243 為一圓錐面，所以第二反射面243之開口為一圓形，也就是說， 第二反射面243之開口需完全涵蓋第一表面，藉以使得發光二 極體光源11發出的大部分光線得以完全入射至第二反射面 243 ° 如第3A圖所示’第二折射面244，其為一向外凸出之凸 面，並且設置於第二反射面243及入光面242之間，用以折射 被第二反射面243全反射之光線或直接從發光二極體光源11 發出之光線，使光線向邊射型光學透鏡24之兩侧折射出光。 如第4圖所示，其係使用光感測器在出光角度〇度至土9〇 度量測邊射型發光二極體結構20的光強度，其中出光角度〇 200908366 aUP0.J96B?23i 度係定義在邊射型光學透鏡24之中央軸241上。將最大光強 度定義為1，而當出光角度介於〇度至±40度之間時，其相辦 光強度約介於0.14至0.4之間。與習知之邊射型發光二極體結 構10相比，在同樣較小的出光角度’例如介於〇度至±40度之 間，邊射型發光二極體結構20的光強度皆小於習知之邊射型 發光二極體結構10的光強度。 如第5A圖及第5B圖所示，為了增加光線被第二反射面 243全反射的機會，第二反射面243進一步包括一第一反射部 245及一第二反射部246。第一反射部245為一圓錐面，並與 中央轴241形成第一夾角Θ1 ’第一夾角01之大小係介於 度至60度之間，藉此使得光線入射至第一反射部245的入射 角大於臨界角並使光線被全反射。而第二反射部246係設置於 第一反射部245及第二折射面244之間’用以連接第一反射部 245及第二折射面244，第二反射部246係輿中央軸241之平 行軸248形成有一第二夾角02,並且第二夾角之大小係大 於第一夾角0 1之大小，係約介於7〇度至8〇度之間。 由發光二極體光源U發出之光線，入射至第一反射部 及第二反射部246時’因為光線入射至第一反射部245 反射部246的入射角皆大於臨界角，所以會使得入射之二 反射’而不會直接由第-反射部冰及第二反射部施折射= 邊射型光學透鏡24。藉由設置第—反射部冰及第二出 施，使得本實施例之邊射型發光二極體結構21可提M = 第二反射面243全反射的機| 、、、良破 馎自，糟以降低在較小出光角度的 強度。 W先 200908366 為了再更進一步增加光線被第二反射面243全反射的機 會，第二反射面243可進一步包括相互連接之至少三反射部， 並且每一反射部與中央軸241或其平行軸248的夾角關係為由 中央軸241逐漸向外增加，也就是說較靠近第二折射面244之 反射部與平行軸248之夾角皆大於相鄰且靠近中央軸Μ〗之反 射部與平行軸248之夾角，使得較小出光角度的光強度更為下 降，並且大部分的光線接由邊射型發光二極體結構21之兩側 折射出光。 如第6圖所示，其係使用光感測器在出光角度〇度至士9〇 度量測邊射型發光二極體結構21的光強度，其中出光角度〇 度2定義在邊射型光學透鏡24之中央軸241上。將最大光強 度定義為1 ’當出光角度介於〇度至±4〇度之間時，其相對光 強度^介於（U3纟〇·37之間’相較於邊射型發光二極體結構 °在同樣較小的出光角度下，例如介於0度至±40度之 間邊射型發光二極體結構21的光強度皆小於習知邊射型發 光二極體結構1〇的光強度，並且大幅降低了中央的光強度。 —如第7Α圖及第8Α圖所示’為更進—步降低邊射型發光 二，體結構2G、21中央出光之光強度，本實施例進一步包括 :弟二折射面247，其係以中央軸241為中心，在入光面犯 =成内四之-圓錐面’並且圓錐面之頂點係設置相對於第二 =⑷之圓錐頂點處’第三折射面247之開口亦大於或等 η八山 表面大小，使得發光二極體光源 5的大部分光線完全入射至第三折射面247。 如第7B圖及第8Β圖所示，因為發光二極體光源11發出 11 200908366 CHIP〇J96TW723i 之光線會先被第三折射面247折射，使光線先向邊射型光學透 鏡24之兩側折射，進而改變其行進方向，並使其先行遠離邊 射型光學透鏡24之中央。另外當光線入射至第二反射面243 時，因為光線之入射角大於未設置第三折射面247時的入射 角，所以有更多光線的入射角會大於臨界角，也就是說有更多 的光線會被第二反射面243反射，藉此可進一步降低邊射型發 光二極體結構20、21中央出光之光強度。 如第9圖所示，其係為習知之邊射型發光二極體結構⑺ 及本實施例之邊射型發光二極體結構之第一態樣2〇及第二態 樣21的出光角度與相對光強度分佈比較圖。相較於習知之邊 射型發光二極體結構10,本實施例之邊射型發光二極體結構之 第-態樣20及第二態樣21在較小出光角度的光強度皆小於習 4 ^邊射型發光—極體結構1G的光強度。本實施例藉由設計 第二反射面243之形狀及第一夾角之大小，使大部分光線 向邊射型光學透鏡24之兩侧出光，並且大幅降低了在較小出 光角度的光強度。因此可得知，藉由本實施例可大幅改善習知 邊射型發光一極體結構10在中央漏光的情況。 惟上述各實施例係用以說明本發明之特點，其目的在使熟 習該技術者能瞭解本發明之内容並據以實施，而非限定本發明 之專利簡’故凡其他未雜本發明所揭示之精神而完成 效修飾或修改，仍應包含在以τ所述之申請專利範圍中。 【圖式簡單說明】 第1Α圖為習知邊射型發光二極體結構之剖面示意圖。 12 200908366 CHIF0JJ96T^7231 第IB圖為第ία圖中a區域之局部放大圖。 第2圖為習知邊射型發光二極體結構之出光角度與相對光強度 分佈圖。 第3A圖為本發明之一種邊射型發光二極體結構之第一態樣剖 視實施例圖。 第3B圖為第3A圖中B區域之局部放大圖。 第4圖為本發明之一種邊射型發光二極體結構之第一態樣之出 光角度與相對光強度分佈圖。 第5A圖為本發日^之—種邊射型發光二極體結構之第二態樣剖 視實施例圖。 圖為第5A圖中c區域之局部放大圖。 為本發明之—種邊射型發光二極體結構之第二態樣之出 先角度與相對光強度分佈圖。 本發明之—種邊射型發光二極體結構之第三態樣 剖視實施例圖。 圖為第7A圖中D區域之局部放大圖。 視實施例1本《明之—種邊射型發光二極體結構之第四態樣剖 :二=第8A_E區域之局部放大圖。 分佈L較圖。邊射m極體結構之出光角度與相對光強度 【主要元件符號說明】 10.................. π ...........習知邊射型發光二極體結構 13 200908366CiIiFO_096Tf72:H is symmetrically distributed over the central axis 241. The light incident surface 242 is perpendicular to the plane of the central axis 241 for abutting the light emitting diode light source 11 to couple the light emitted from the light emitting diode light source 11 into the edge emitting optical lens 24. a second reflecting surface 243, which is a conical surface, and has a first angle 01 formed with the central axis 241, and the first angle 01 is between 1 and 60 degrees, and the second reflecting surface 243 can be changed. The direction of travel of the incident light is 'and is totally reflected. As shown in FIG. 3B, when the light emitted by the light-emitting diode light source 11 is incident on the second reflecting surface 243, since the incident angle of the light incident on the second reflecting surface 243 is larger than the critical angle, the incident light is completely reflection. In order to make most of the light emitted by the light-emitting diode source 11 incident on the second reflecting surface 243 ′, the opening of the second reflecting surface 243 is designed to be greater than or equal to the first surface size of the light-emitting diode light source 11 The first surface is the surface of the light-emitting diode light source 11 facing the light-incident surface 242. Since the second reflective surface 243 is a conical surface, the opening of the second reflective surface 243 is a circle, that is, the second reflection. The opening of the face 243 needs to completely cover the first surface, so that most of the light emitted by the light-emitting diode source 11 is completely incident on the second reflecting surface 243 ° as shown in FIG. 3A, the second refractive surface 244 is a one-way The convex surface is convexly disposed between the second reflecting surface 243 and the light incident surface 242 for refracting the light totally reflected by the second reflecting surface 243 or directly emitted from the light emitting diode 11 Light is refracted to both sides of the edge-emitting optical lens 24. As shown in Fig. 4, it uses a light sensor to measure the light intensity of the edge-emitting diode structure 20 at the light-emitting angle to the soil 9 ,, wherein the light-emitting angle 〇200908366 aUP0.J96B?23i degrees It is defined on the central axis 241 of the edge-emitting optical lens 24. The maximum light intensity is defined as 1, and when the light exit angle is between ±40 degrees, the relative light intensity is between 0.14 and 0.4. Compared with the conventional side-emitting LED structure 10, the light intensity of the edge-emitting LED structure 20 is smaller than that at the same small light-emitting angle 'for example, between 〇 and ±40 degrees. The light intensity of the side-emitting LED structure 10 is known. As shown in FIGS. 5A and 5B, in order to increase the chance of the light being totally reflected by the second reflecting surface 243, the second reflecting surface 243 further includes a first reflecting portion 245 and a second reflecting portion 246. The first reflecting portion 245 is a conical surface and forms a first angle Θ1 with the central axis 241. The first angle 01 is between the degrees and 60 degrees, thereby causing the incident light to be incident on the first reflecting portion 245. The angle is greater than the critical angle and the light is totally reflected. The second reflecting portion 246 is disposed between the first reflecting portion 245 and the second refractive surface 244 to connect the first reflecting portion 245 and the second reflecting surface 244, and the second reflecting portion 246 is parallel to the central axis 241. The shaft 248 is formed with a second angle 02, and the second angle is greater than the first angle 0 1 and is between about 7 and 8 degrees. The light emitted by the light-emitting diode light source U is incident on the first reflecting portion and the second reflecting portion 246. 'Because the incident angle of the light incident on the reflecting portion 246 of the first reflecting portion 245 is greater than the critical angle, the incident angle is made. The two reflections are not directly refracted by the first-reflecting portion ice and the second reflecting portion = the edge-emitting optical lens 24. By providing the first reflecting portion ice and the second discharging, the edge-emitting type LED structure 21 of the present embodiment can provide M = the total reflection of the second reflecting surface 243 |, Dirty to reduce the intensity at a small exit angle. W first 200908366 In order to further increase the chance of the light being totally reflected by the second reflecting surface 243, the second reflecting surface 243 may further comprise at least three reflecting portions connected to each other, and each reflecting portion and the central axis 241 or its parallel axis 248 The angle relationship is gradually increased outward from the central axis 241, that is, the angle between the reflection portion closer to the second refractive surface 244 and the parallel axis 248 is greater than the reflection portion and the parallel axis 248 adjacent to and adjacent to the central axis. The angle is such that the light intensity of the smaller light exiting angle is further reduced, and most of the light is refracted by the two sides of the edge-emitting type LED structure 21. As shown in Fig. 6, the light intensity of the edge-emitting type LED structure 21 is measured by using a light sensor at a light-emitting angle of 0.1 〇, wherein the light-emitting angle 2 2 is defined as an edge-emitting type. The central axis 241 of the optical lens 24. The maximum light intensity is defined as 1 'when the light exit angle is between 〇 and ±4〇, the relative light intensity ^ is between (U3纟〇·37' compared to the edge-emitting type LED The light intensity of the edge-emitting LED structure 21 is smaller than that of the conventional edge-emitting diode structure 1 at a light emission angle of the same angle, for example, between 0 and ±40 degrees. The intensity and the central light intensity are greatly reduced. - As shown in Fig. 7 and Fig. 8 'to further reduce the edge-emitting type light, the intensity of the light emitted from the central structure of the body structure 2G, 21, further in this embodiment Including: the second refractive surface 247, which is centered on the central axis 241, is in the light-incident surface = the inner four-conical surface and the apex of the conical surface is set relative to the second vertex vertices of the second = (4) The opening of the tri-refractive surface 247 is also larger than or equal to the size of the surface of the η-eight-mountain, so that most of the light of the light-emitting diode light source 5 is completely incident on the third refractive surface 247. As shown in Fig. 7B and Fig. 8 The polar body light source 11 emits 11 200908366 CHIP 〇 J96TW723i light will be firstly refracted by the third refracting surface Reversing 247 causes the light to be refracted toward both sides of the edge-emitting optical lens 24, thereby changing its direction of travel and moving away from the center of the edge-emitting optical lens 24. Further, when light is incident on the second reflecting surface 243, Since the incident angle of the light is larger than the incident angle when the third refractive surface 247 is not disposed, the incident angle of more light will be greater than the critical angle, that is, more light will be reflected by the second reflective surface 243, thereby The intensity of light emitted from the center of the side-emitting LED structure 20, 21 can be further reduced. As shown in Fig. 9, it is a conventional side-emitting type LED structure (7) and the side-emitting type of the embodiment. A comparison diagram of the light exit angle and the relative light intensity distribution of the first aspect 2〇 and the second aspect 21 of the diode structure. Compared with the conventional edge-emitting LED structure 10, the side shot type of this embodiment The light intensity of the first-mode 20 and the second-state 21 of the light-emitting diode structure at a smaller light-emitting angle is smaller than the light intensity of the light-emitting body structure 1G. This embodiment is designed by the first embodiment. The shape of the two reflecting surfaces 243 and the size of the first angle A large part of the light is emitted to both sides of the edge-emitting optical lens 24, and the light intensity at a small light-emitting angle is greatly reduced. Therefore, it can be seen that the conventional edge-emitting type light-emitting body can be greatly improved by the embodiment. The structure of the structure 10 is leaking in the center. The above embodiments are intended to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention without limiting the invention. Therefore, any other modification or modification that has not been accomplished by the spirit of the present invention should be included in the scope of the patent application described in τ. [Simple Description of the Drawing] The first drawing is a conventional edge-emitting type dipole. Schematic diagram of the body structure. 12 200908366 CHIF0JJ96T^7231 Figure IB is a partial enlarged view of the area a in the ία diagram. Fig. 2 is a diagram showing the distribution of light outgoing angle and relative light intensity of a conventional side-emitting type LED structure. Fig. 3A is a cross-sectional view showing a first aspect of a side-emitting type light emitting diode structure of the present invention. Fig. 3B is a partial enlarged view of the B region in Fig. 3A. Fig. 4 is a view showing the light extraction angle and the relative light intensity distribution of the first aspect of the side-emitting type LED structure of the present invention. Fig. 5A is a cross-sectional view showing a second aspect of the structure of the side-emitting type light-emitting diode of the present invention. The figure is a partial enlarged view of the c area in Fig. 5A. The first angle and the relative light intensity distribution diagram of the second aspect of the edge-emitting type LED structure of the present invention. A cross-sectional view of a third aspect of a side-emitting LED structure of the present invention. The figure is a partial enlarged view of the D area in Fig. 7A. According to the first embodiment of the present invention, the fourth aspect of the structure of the side-emitting type light-emitting diode structure is as follows: 2 = a partial enlarged view of the 8A_E region. The distribution L is compared to the figure. Light exit angle and relative light intensity of the edge-emitting m-pole structure [Main component symbol description] 10.................. π ........... Conventional edge-emitting type LED structure 13 200908366
Qnvojydmrm π..............................發光二極體光源 12..............................邊射型光學透鏡 121 ............................入光面 122 ............................第一反射面 123 ............................第一折射面 124............................中央轴 20、21、22、23........邊射型發光二極體之結構 〆 24..............................邊射型光學透鏡 241 ............................中央轴 242 ............................入光面 243 ............................第二反射面 244 ............................第二折射面 245 ............................第一反射部 246 ............................第二反射部 247 ............................第三折射面 248 ............................中央轴之平行軸 Θ 1............................第一夾角 Θ2............................第二夾角 14Qnvojydmrm π..............................Lighting diode light source 12............ .................. Edge-emitting optical lens 121 .......................... ..lighting surface 122 ............................first reflecting surface 123 ........... .................The first refractive surface 124........................... The structure of the central axis 20, 21, 22, 23, .... side-emitting type light-emitting diodes ... 24...................... ........edge-type optical lens 241 ....................... central axis 242 ..... .......................lighting surface 243 ..................... ..... second reflecting surface 244 ............................ second refractive surface 245 ....... .....................first reflecting portion 246 ........................ .... second reflecting portion 247 ....................... third refractive surface 248 ........ ....................The parallel axis of the central axis Θ 1....................... .....first angle Θ2............................second angle 14