TW200908166A - Adhesive for electronic component, semiconductor chip stacking method, and semiconductor device - Google Patents

Adhesive for electronic component, semiconductor chip stacking method, and semiconductor device Download PDF

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Publication number
TW200908166A
TW200908166A TW097128044A TW97128044A TW200908166A TW 200908166 A TW200908166 A TW 200908166A TW 097128044 A TW097128044 A TW 097128044A TW 97128044 A TW97128044 A TW 97128044A TW 200908166 A TW200908166 A TW 200908166A
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TW
Taiwan
Prior art keywords
adhesive
electronic component
semiconductor wafer
electronic parts
electronic
Prior art date
Application number
TW097128044A
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Chinese (zh)
Other versions
TWI411049B (en
Inventor
Hideaki Ishizawa
Akinobu Hayakawa
Kohei Takeda
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Sekisui Chemical Co Ltd
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Publication of TW200908166A publication Critical patent/TW200908166A/en
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Publication of TWI411049B publication Critical patent/TWI411049B/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

This invention provides an adhesive for an electronic component which can realize the connection of one electronic component to another electronic component or a support member parallel to each other while providing an accurate gap distance, semiconductor chip stacking method using the adhesive for an electronic component and a semiconductor device. The adhesive for an electronic component is used for stacking one electronic component and another electronic component or a support member parallel to each other while providing a gap distance of not more than 30 [mu]m. The adhesive for an electronic component contains a curable compound, a curing agent, and spacer particles, and has a viscosity of not more than 50 Pa s as measured with E-type viscometer at 10 rpm and at a temperature at which the one electronic component is bonded to the another electronic component or the support member.; The spacer particles have a CV value of not more than 10%. The average particle diameter is 40 to 70% of the gap distance between the one electronic component and the another electronic component or the support member.

Description

200908166 九、發明說明： 【發明所屬之技術領域】 :發明係關於一種能以平行且正確之間隙間距離將一 接人t件與其他電子零件、或一電子零件與支持構件加以 子零件用接著劑。χ，亦關於—種使用該電子零 4用接者劑之半導體晶片之積層方法、及半導體裝置。 【先前技術】200908166 IX. Description of the invention: [Technical field to which the invention pertains]: The invention relates to a sub-part that can be used to connect a piece of t-pieces and other electronic parts, or an electronic part and a supporting member with parallel and correct inter-gap distances. Agent. Further, the present invention relates to a method of laminating a semiconductor wafer using the electron carrier, and a semiconductor device. [Prior Art]

近年來’伴隨對半導體封I之小型化、高度積體化之 、、已逐漸在將複數個半導體晶片加以積層以製成多層 半導體晶片積層體之3次元構裝的方向發展…亦正進 订使該半導體晶片積㈣進_步小型化之研究。 曰^此’彳導體晶片&變成極薄之薄《，並且於半導體 晶片上形成微細之配線。在此種3次元構裝之半導體晶片 積層體，係要求在不損傷各半導體晶片下，且能保持平行 來進行積層。 保持半導體晶片彼此平行並予以積層接合之方法，已 头有種例如使用含有微粒之接著劑，並將接著劑塗布於 +半導體晶片_h ’以形成具有微粒之粒徑以上之厚度的接 著劑層’透過所形成之接著劑層疊合其他半導體晶片，然 後對接著劑層力口Μ，以將接著劑壓入直至接 、 等於微粒之粒徑為止的方法。 孚又 3有忒種微粒之接著劑，例如於專利文獻丨記載有一 種以硬質塑膠微粒為必要成分的接著劑，#中該硬質塑膠 微教具有實質上界定接著劑硬化後之膜厚之粒徑。實施例 5 200908166 中記載有使用摻合有平均粒徑為2G”之硬質塑膠微粒的 接者劑，以與平均粒徑同等厚度之接著劑層，將石夕元件接 著於導線架上。 接 又，專利文獻2亦記載有若使用摻合有平均粒徑為 〜且長寬比在hl以下之樹脂微粒的接著劑 樹脂微粒具有間隙調整材之功能。 、 然而，因近年來對半導體封裝之小型化、高度積體化 之要求’半導體晶片之間隙間曰益變得狹窄，於摻合如專 利文獻！所記載之與硬化後之膜厚大致相等之粒徑的粒子 !:直至粒子本身可發揮間隙材功能之厚度前無法壓入接 者劑’導致有時不能達成所欲之間隙間距離。x，有時 無法將所要接合半導體晶片彼此正確地保持平行。 專利文獻1 :曰本特開平i ^^9765號公報 專利文獻2 :曰本特開2〇〇5_244188號公報 【發明内容】 *本發明之目的在於提供一種能以平行且正確之間隙間 距離’將一電子零件與其他電子零件、或—電子零件與支 持構件加以接合之電子零件用接著劑。又，本發明之 亦在於提供一種使用該電子零件用接著劑之半導體晶片之 積層方法、及半導體裝置。 本發明係一種電子零件用接著劑， 與i他雷早⑥杜+ _將電子零件 、电子令件、或—電子零件與支持構件，以3〇” 下之間隙間距離加以平行積層，係含有硬化性化合物 化劑及間隔粒子；在接合該__電子零件與其他電子零件、 6 200908166 或電子零件與支持構件時之溫度下，使用 l〇rpm所測得的黏度為5 i黏度計以In recent years, with the miniaturization and high integration of the semiconductor package I, the development of the three-dimensional structure of the multilayer semiconductor wafer laminate has been gradually developed. The semiconductor wafer product (4) was studied in a miniaturization step. Then, the "conductor wafer & becomes extremely thin and thin", and fine wiring is formed on the semiconductor wafer. The semiconductor wafer laminate in such a three-dimensional configuration is required to be laminated without damaging each semiconductor wafer and in parallel. The method of keeping the semiconductor wafers parallel to each other and laminating them is, for example, using an adhesive containing fine particles, and applying an adhesive to the + semiconductor wafer_h' to form an adhesive layer having a thickness larger than the particle diameter of the fine particles. 'A method of laminating another semiconductor wafer through the formed adhesive, and then pressing the adhesive layer to press the adhesive up to the particle size of the fine particles. Fu Fu 3 has an anti-adhesive agent for fine particles. For example, in the patent document, an adhesive containing hard plastic particles as an essential component is described, and the hard plastic micro-teaching has a film thickness substantially defining the film thickness after hardening of the adhesive. path. Example 5 In 200908166, a connector using a hard plastic fine particle having an average particle diameter of 2 G" is used, and a stone layer element is attached to a lead frame by an adhesive layer having a thickness equal to the average particle diameter. Patent Document 2 also discloses that the resin fine particles in which the resin fine particles having an average particle diameter of ~ and an aspect ratio of hl or less are used have a function of a gap adjusting material. However, in recent years, the semiconductor package is small. The requirements for the high level of integration and the 'semiconductor wafer gaps are narrow, and the particles of the particle size which are substantially equal to the film thickness after hardening as described in the patent document are blended! The gap between the thickness of the gap material function cannot be pressed into the connector', and sometimes the desired gap between the gaps may not be achieved. x, sometimes the semiconductor wafers to be bonded may not be correctly parallel to each other. Patent Document 1: 曰本特开平i [0003] Patent Document 2: 曰本特开 2〇〇5_244188 SUMMARY OF THE INVENTION [The present invention] It is an object of the present invention to provide a parallel and correct distance between gaps ' An adhesive for an electronic component in which an electronic component is bonded to another electronic component or an electronic component and a supporting member. Further, the present invention provides a method of laminating a semiconductor wafer using the adhesive for the electronic component, and a semiconductor device The present invention relates to an adhesive for electronic parts, and is parallelized with the distance between the gaps of the electronic parts, the electronic parts, or the electronic parts and the supporting members by the gap between the gaps of the electronic parts, the electronic parts, or the electronic parts and the supporting members. Containing a hardening compounding agent and spacer particles; at a temperature at which the __electronic parts and other electronic parts, 6 200908166 or electronic parts and supporting members are joined, the viscosity measured using l rpm is 5 i viscometer

值為10%以下，且_ a s以下’該間隔粒子，其CV 一電子零件μ持構電子零件與其他電子零件、或該 本發明：等發現=:間距離的4°〜7°%。 電子零件、或—電子零種^有用以接合一電子零件與其他 劑，其具有既定黏度特性〃支持構件之間隔粒子的接著 小，且相對於該一電子*杜所含之間隔粒子具有均勻之大 零件與支持構件之間隙^貞其他電子零件、或該—電子 内，可充分對應近年==未其平均粒徑係在既定範圍 所伴隨之窄間隔化，並能將于：之小型化、高度積體化 或-電子零件與支持 。電子零件與其他電子零件、 接合，從而完成本發明。以平行且正確之間隙間距離加以 件、=電=距離係意指將-電子零件與其他電子零 其他電子零件+或加以接著時’ 一電子零件與 本發明之電子零件用接i與:持構件之距離。 4子零件並無特職制，可 感測-、及Ε!型或ΕΕ型變 广體广 適合使用半導體晶片。 +件之線圈鐵心等。其中， 又 w亥支持構件只| 3 件之構件，則無特丄:二=導體晶片等電子零 J舉例如導線架、樹脂基板、 200908166 及陶究基板等以往公知之構件。 本發明之電子零件用接著劑所 與其他電子零件、或該—電子零=-電子零件 離的上限為、。在間隙間距離之下：二件之間隙間距 1 5 // m a夺特別右田 朴 吸馮5 " m，上限為 寧I: 若以此種間隙間距離來接合該一電子 令件與其他電子零件、或 ^ ° ^电子 可充分對瘅i i ^ 零件與支持構件時，即 了充刀對應近年來半導體封裝之小型化 f 此處，接著劑硬化後之膜厚為：度積體化。 —在以上述窄間隔進= :，=Γ子零件彼此等保持成平行，且難以正確二 相對於此，本發明之電子零件用接著 内，亚配合所欲之電子零件彼此等之間隙間 = 擇所含之間隔粒子之粒徑，以使其在既定範圍内。：：： 發明之電子零件用接著劑，即使在以上述窄間隔來接= 子零件彼此等時’亦可將所要接合之電子零件彼此等2 成平灯，並正確控制該等間隙間距離。 本發明之電子零件用接著劑係含有間隔粒子。 該間隔粒子之cv值之上限為1G%。^ cv值超過咖 時，間隔粒徑之偏差會變大’在接合—電子零件與其他電 子零件、或-電子零件與支持構件時，無法以平行且正確 之間隙間距離將此等加以接合，而不能充分發揮作為間隔 粒子之功能。cv值之較佳上限為6%，更佳上限為4%。w 此外，本說明書中，CV值係指以下述式（1)所求出之 200908166 數值。 U) 值（％)= (σ 2/Dn2)xl〇〇 式（1)中，σ2係表示粒 平均粒徑。 二之钛準差，Dn2則表示數量 該間隔粒子之平均 較佳。 下限以，上限以20_ :::隔粒子之平均粒徑未達一 =零件彼此等之間隙會過窄， ：= 間隙間距離將此等加以。— 卞仃且正確之 過20 /z m時，目,丨齋 °右該間隔粒子之平均粒徑超 法充分對庫近车；子零件彼此等之間隔會大於所須，而血 去充刀對應近年來半導體封裝之小型化、 ’、，、 間隔粒子之平均粒徑之更佳下限為3 I積體化。該 β m 0 限為m，較佳上限為1〇 又’該間隔粒子之平均粒徑，相對 與其他電子跫件、赤μ .+、雨 电于零件 距離，苴… 子零件與支持構件之間隙間 . 為娜，上限為7G%。若該間隔粒子之平均 粒徑未達40%時，則間隔粒子相 -η M 、所欲之電子零件間等 間隙間距離會過小，而難以將所要接合之電子零 γ在平行且正確之間㈣距離。若該間隔粒子之平均粒 Τ寺’則間隔粒子相對於所欲之電子零件間等之 :=距離會過大’而無法充分排除所要接合之電子零件 或支持構件與間隔粒子之間的接著劑，其結果列會變成大 200908166 於所欲之間隙間距離。該間隔粒子之平均粒徑的較佳下限 為45% ’較佳上限為60%。 該間隔粒子之平均粒徑，較佳在所添加之固體成 包：：隔粒子)之平均粒徑的^倍以上。若該間隔粒子 之平均粒控未& ^倍時，則有時會難以將電子零件彼此 寺之間隔設為上述窄間隔。更佳為使該間隔 徑在1.2倍以上。 < 十构粒 之：隔粒子’其粒徑分布之標準差較佳為在間隔粒子 二1:的1〇%以下。藉由使粒徑分布之標準差在1。% 平行接合。 *之接。時，可更穩定地將其 該間隔粒子之材質並益辟％丨UP庄, 無機粒子、有機無機混合可::有機粒子、 或有機無機混合粒子較合適。 有機粒子 亥有機粒子並無特別限制，例如可舉樹脂粒子。 構成該樹脂粒子之樹脂並無特別限制，例如可列舉聚 3嫌聚丙稀、聚甲基戍烯、聚氣乙稀、聚四氣乙稀、聚 =烯、”基丙烯酸甲醋、聚對苯二甲酸乙二酯、聚對 :::酸丁 —酯、聚醯胺、聚醯亞胺、聚砜、聚苯醚、及 :’广：。其中’由於易於調整間隔粒子之硬度及恢復率， 亦可提升耐熱性，因此以使用交聯樹脂較佳。 騎=聯：？並無特別限制，例如可列舉環氧樹脂、盼 物：一曰二聚鼠胺樹脂、不飽和聚酯樹酯、二乙烯苯聚合 稀苯苯乙稀共聚物、二乙稀苯-丙稀酸酿共聚物、 200908166 η本二甲酸二烯丙酯聚合物、三聚異氰酸三烯丙酯聚合 物及笨代二聚氰胺聚合物等具有網目構造之樹酯。其中， 由於在接合晶片後，對硬化步驟、焊料回焊步驟等熱處理 步驟之耐性優因此以〕乙烯$聚合物、^乙烯苯·笨乙 烯共象物、二乙烯苯_甲基丙烯酸酯共聚物、及鄰苯二甲酸 二烯丙酯聚合物較佳。 構成該無機粒子之材料並無特別限制，可列舉例如氧 化矽、氧化鋁、氮化硼、氮化鋁、氮化石夕、鑽石、氧化鈦、 及氧化鍅等。 石〜頁機無機混合粒子並無特別限制，例如可舉以烷韋 …為主成刀之有機無機混合粒子等。此種以烷氧矽烷# 主成分之有機無機混合粒子，例如可依照曰本特許身 =2號說明書所記載之方法，藉由將烧氧㈣予^ 水分解縮聚來製造。 :間隔粒子’視需要，較佳為施以表面處理。 跫件該間隔粒子施以表面處理’可在本發明之電子 7牛用接者劑，實現後述黏度特性。 該表面處理方法並無特別限制，例如在接著組成物整 益特：=性時，以於表面賦予親水基較佳。此種方法並 舉以且ΓΓ，例如在使用該樹脂粒子作為間隔粒子時，可 水基之偶合劑來處理樹脂粒子表面之方法等。 寬比以球狀較佳…該間隔粒子之長 。電子零件彼此等時，可穩定將此㈣接 200908166 本說明書中，長寬比係指針對粒子之長徑與短徑，其長秤 長度對短徑長度之比（長徑長度除以短徑長度之值）。該長 寬比之值愈接近1，則間隔粒子之形狀愈接近正圓。 該間隔粒子，其以下述式（2)所示之反值的較佳下限為 980N/mm2，較佳上限為 490〇N/mm2。 K=(3//~ 2) * F · S-3/2 · R-l/2 式（2)中，F、S分別表示間隔粒子之1〇%壓縮變形的 荷重值（kgf)、壓縮位移（mm)，R表示該間隔粒子之半徑 (mm)。 該K值可藉由以下測量方法來測量。 首先，將間隔粒子散布於具有平滑表面之鋼板上後， 自其中選# 1個間隔粒子’使用微小壓縮測試機以鑽石製 直徑為5” m之圓柱的平滑端面來壓縮間隔粒子。此時， 以電磁力電檢測出壓縮荷重，以動作變壓器之位移電檢測 出壓縮位移。接著，從所獲得之壓縮位移荷重之關係，分 別求出1 0 /。壓細變形之荷重值、壓縮位移，並從所獲得之 結果算出κ值。 -該間隔粒子’其從2(rc、1()%之壓縮變形狀態釋放時 之堅縮〖灰復率的車又佳下限為20%。在使用具有此種壓縮恢 復率之間隔粒子時’即使間隙間距離左右之較大粒子存在 於所要積層之電子零件間’亦可藉由壓縮變形使形狀恢復 而發揮間隙調整材之作用。因此，能以更穩定之—定間隔 200908166 來平行積層電子零件彼此等。 忒壓縮恢復率可藉由以下測量方法來測量。 藉由與測篁該κ值時之相同方法，以動作變壓器之位 移電檢測出壓縮位移，在壓縮中逐漸減少荷重直至反轉荷 重值為止，測量該情形下荷重與壓縮位移之關係。從所得 之測量結果算出壓縮恢復率。然而，去荷重之終點並非荷 重值為零，而係〇, lg以上之原點荷重值。The value is 10% or less, and _ a s or less is the spacer particle, and the CV-electronic component μ holds the electronic component and other electronic components, or the present invention: etc. =: 4° to 7°% of the distance. An electronic component, or an electronic component, is useful for bonding an electronic component and other agents having a predetermined viscosity characteristic, the spacer particles of the support member are then small, and are uniform with respect to the spacer particles contained in the electron. The gap between the large part and the supporting member, or other electronic parts, or the inside of the electron, can fully correspond to the recent years ==The average particle size is narrowly spaced along the established range, and can be miniaturized, Highly integrated or - electronic parts and support. The electronic component is joined to other electronic components to complete the present invention. By means of a parallel and correct distance between the gaps, = electric = distance means that the electronic parts and other electronic parts of the other electronic parts + or the following - an electronic part and the electronic parts of the invention are used: The distance of the component. There are no special functions for the 4 sub-components, and the sensing-, and/or Ε-type or ΕΕ-type can be changed to a wide range of semiconductor wafers. + piece coil core and so on. In addition, there are no special features: two = electronic components such as a conductor chip, such as a lead frame, a resin substrate, a 200908166, and a ceramic substrate, and other conventionally known members. The upper limit of the adhesive for electronic parts of the present invention and other electronic parts or the electronic zero--electronic parts is . Below the gap between the gaps: the gap between the two pieces is 1 5 // ma wins the special right Tian Pu feng 5 " m, the upper limit is NING I: if the distance between the gaps is used to join the electronic and other electronic When the part or the ^ ^ ^ electron is sufficient for the 零件 ^ ^ part and the supporting member, that is, the filling knife corresponds to the miniaturization of the semiconductor package in recent years. Here, the film thickness after the curing of the adhesive is: integrated. - at the narrow intervals described above =:, = the scorpion parts are kept parallel to each other, and it is difficult to correct them. In contrast, the electronic parts of the present invention are used in the gaps between the electronic components and the desired electronic components. The particle size of the spacer particles contained is chosen such that it is within a predetermined range. ::: Inventive electronic component adhesives, even when connected at the narrow intervals = sub-parts, etc., can also be used to align the electronic components to be joined to each other, and correctly control the distance between the gaps. The adhesive for electronic parts of the present invention contains spacer particles. The upper limit of the cv value of the spacer particles is 1 G%. ^When the cv value exceeds the coffee, the deviation of the spacer particle size becomes larger. 'When bonding - electronic parts and other electronic parts, or - electronic parts and supporting members, it is impossible to join them by parallel and correct gaps between the gaps. However, the function as a spacer particle cannot be fully utilized. The upper limit of the cv value is 6%, and the upper limit is 4%. Further, in the present specification, the CV value means the value of 200908166 obtained by the following formula (1). U) Value (%) = (σ 2/Dn2) xl 〇〇 In the formula (1), σ2 represents the average particle diameter. The titanium quasi-difference, Dn2, indicates that the average of the spacer particles is better. The lower limit is, the upper limit is 20_::: the average particle size of the particles is less than one = the gap between the parts and the like is too narrow, := The distance between the gaps is added. — 卞仃 正确 正确 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 右 右 右 右 右 右 右 右 右 右 右 右 右 右 右 右 右 右 右In recent years, the semiconductor package has been miniaturized, and the lower limit of the average particle diameter of the spacer particles is 3 I integrated. The β m 0 is limited to m, and the preferred upper limit is 1〇 and 'the average particle diameter of the spacer particles, relative to other electronic components, red μ.+, rain power to the part distance, 苴... sub-parts and supporting members Between the gaps. For Na, the upper limit is 7G%. If the average particle diameter of the spacer particles is less than 40%, the distance between the interstitial particle phase η M and the desired electronic component may be too small, and it is difficult to make the electron zero γ to be bonded parallel and correct. (4) Distance. If the average particle size of the spacer particles is such that the spacer particles are too large relative to the desired electronic component: the distance between the electronic components or the support member and the spacer particles cannot be sufficiently excluded. The result column will become the distance between the large gaps of 200908166. A preferred lower limit of the average particle diameter of the spacer particles is 45% Å, and a preferred upper limit is 60%. The average particle diameter of the spacer particles is preferably more than twice the average particle diameter of the solid-packed::interstitial particles to be added. If the average grain size of the spacer particles is not & ^ times, it may be difficult to set the interval between the electronic components to each other as the narrow interval. More preferably, the interval is 1.2 times or more. < Ten granules: The standard deviation of the particle diameter distribution of the spacer particles is preferably 1% or less of the spacer particles 2:1. By making the standard deviation of the particle size distribution at 1. % parallel joints. * Connected. In time, the material of the spacer particles can be more stably obtained, and the inorganic particles and the organic-inorganic mixture can be selected: organic particles or organic-inorganic hybrid particles are suitable. Organic particles The organic particles are not particularly limited, and examples thereof include resin particles. The resin constituting the resin particles is not particularly limited, and examples thereof include poly 3 propylene, polymethyl decene, polyethylene oxide, polytetraethylene, poly olefin, methacrylic acid, and polyparaphenylene. Ethylene diformate, polypair::: butyl acrylate, poly decylamine, poly phthalimide, poly sulfone, polyphenylene ether, and: 'wide: where 'the hardness and recovery rate of the spacer particles are easy to adjust It is also preferable to use a crosslinked resin. There is no particular limitation on the use of a crosslinked resin. For example, an epoxy resin or a probable substance: a dimerized murine amine resin, an unsaturated polyester resin , divinylbenzene polymerized styrene-styrene copolymer, diethyl benzene-acrylic acid styrene copolymer, 200908166 η dicarboxylate dicarboxylate polymer, triallyl isocyanurate polymer and stupid a resin having a mesh structure such as a melamine polymer, wherein the ethylene resin is excellent in the heat treatment step such as the hardening step and the solder reflow step after bonding the wafer. Ethylene co-image, divinylbenzene-methacrylate copolymer, and phthalic acid The acid diallyl polymer is preferably a material which is not particularly limited, and examples thereof include cerium oxide, aluminum oxide, boron nitride, aluminum nitride, cerium nitride, diamond, titanium oxide, and cerium oxide. The stone-to-page inorganic mixed particles are not particularly limited, and examples thereof include organic-inorganic hybrid particles mainly composed of alkane. The organic-inorganic mixed particles having a main component of alkoxydecane can be, for example, The method described in the specification of No. 2 is produced by decomposing polycondensation of oxygen (4) into water. The spacer particles are preferably subjected to surface treatment as needed. The treatment can be carried out in the electron 7 cattle adapter of the present invention to achieve the viscosity characteristics described later. The surface treatment method is not particularly limited. For example, when the composition is subsequently modified, the surface is preferably a hydrophilic group. In this method, for example, when the resin particles are used as the spacer particles, the water-based coupling agent can be used to treat the surface of the resin particles, etc. The width ratio is preferably spherical. When the electronic parts are equal to each other, the (4) can be stably connected. In this specification, the aspect ratio is the ratio of the length of the long scale to the short diameter of the length of the pointer, and the length of the long scale is divided by the short diameter. The value of the length). The closer the value of the aspect ratio is to 1, the closer the shape of the spacer particles is to a perfect circle. The preferred lower limit of the inverse value of the spacer particles represented by the following formula (2) is 980 N/mm 2 , The upper limit is preferably 490〇N/mm2. K=(3//~ 2) * F · S-3/2 · Rl/2 In the formula (2), F and S respectively represent 1〇% compression deformation of the spacer particles. The load value (kgf), the compression displacement (mm), and R represent the radius (mm) of the spacer particle. The K value can be measured by the following measurement method. First, the spacer particles are dispersed on the steel plate having a smooth surface. From which #1 spacer particles were selected, the spacer particles were compressed using a micro-compression tester with a smooth end face of a diamond diameter of 5" m. At this time, the compression load is detected by the electromagnetic force, and the compression displacement is detected by the displacement of the operating transformer. Next, from the relationship of the obtained compression displacement loads, 1 0 / is obtained. The load value and compression displacement of the compact deformation are calculated, and the κ value is calculated from the obtained result. - the spacer particle's contraction when released from a compression deformation state of 2 (rc, 1%) [the lower limit of the gray complex rate is 20%. When using spacer particles having such compression recovery rate" Even if a large particle having a distance between the gaps exists between the electronic components to be laminated, the shape can be restored by compressive deformation to function as a gap adjusting material. Therefore, the electrons can be laminated in parallel at a more stable interval of 200,908,166. The parts are equal to each other. The compression recovery rate can be measured by the following measurement method. By the same method as when measuring the κ value, the compression displacement is electrically detected by the displacement of the action transformer, and the load is gradually reduced until the reversal in compression. The relationship between the load and the compression displacement in this case is measured until the load value is obtained. The compression recovery rate is calculated from the obtained measurement result. However, the end point of the deloading is not the load value of zero, but the system load, the value of the origin load of lg or more.

该間隔粒子之摻合量的較佳下限為〇.〇1重量％，較佳 上限為10重量％。若該間隔粒子之摻合量未達0.01重量％ 時’則在接合電子零件彼此等時，有時會無法敎將電子 零，彼此之間隔保持_定。㈣間隔粒子之摻合量超過W 重夏％時，則有時會降低作為接著劑之功能。 又’除了該間隔粒子以外，在含有具備該間隔粒子之 :均粒徑以上之直徑的固體成分時，此種固體成分之摻合 里的較佳上限A 1重量％。又，該固體成分之熔點以硬化 溫度以下較佳。 再者，該固體成分之最大粒徑，係以間隔粒子之平均 粒徑的丨‘丨〜以倍較佳，以丨丨〜12倍更佳。 本發明之電子零件用接著劑係含有硬化性化合物。 取入。亥硬化性化合物並無特別限制，例如可使用藉由加成 縮聚、加成lis聚、複加成、加成縮合或開環聚合反 ，所更化之化合物。具體而t，可列舉例如尿素樹脂、三 :氣胺樹脂、酚醛樹脂、間苯二酚樹脂、環氧樹脂、丙； 酸樹脂、聚酯樹酯、聚醯胺樹脂、聚苯並咪唑樹脂、鄰笨 13 200908166 一甲酸二稀丙酷接(_ π ^ 月0、二甲苯樹脂、烷基_苯樹脂、環氧$ 烯酸酯樹脂、矽榭κ ^ 树舳％虱丙 苴中，山 树知、及聚胺酯樹脂等熱硬化性化合物。 ’、 ⑨接合後所製得之半導體裝置的可靠性及接人強 度優異，因此以产J」罪I·生及接合強 胺骨竿d 丙烯酸樹脂較佳’以具有醯亞 月女月朱之％氧樹脂更佳。 X衣氧樹月曰並無特別限制’可列舉例如雙酚A型、雙 =二雙紛AD型、雙紛S型等雙紛型環氧樹脂、盼路 #、甲紛清漆型等㈣型環氧樹脂、三紛甲烧三縮水 等芳香族環氧樹脂、萘型環氧樹脂1型環氧樹脂、 口衣戊-稀型環氧樹脂、間苯二㈣環氧樹脂（間苯二紛縮 X甘油醚）及此等之氫化物等。其中’由於可製得耐埶性 高之電子零件用接著劑，因此以萘型環氧樹脂1型環氧 樹脂、及間笨二酚型環氧樹脂較佳。 该萘型環氧樹脂之中，市售品可列舉例士口 Ηρ·彻2、 HP-4032D、HP_4700、Hp_47〇1(以上，Dainipp〇n 地㈣ V..A preferred lower limit of the blending amount of the spacer particles is 〇.〇1% by weight, and a preferred upper limit is 10% by weight. When the blending amount of the spacer particles is less than 0.01% by weight, when the electronic components are joined to each other, the electrons may not be zero, and the interval therebetween may be kept constant. (4) When the blending amount of the spacer particles exceeds W% by weight, the function as an adhesive may be lowered. Further, in addition to the spacer particles, when a solid component having a diameter equal to or larger than the average particle diameter of the spacer particles is contained, a preferred upper limit A 1% by weight of such a solid component is blended. Further, the melting point of the solid component is preferably at a curing temperature or lower. Further, the maximum particle diameter of the solid component is preferably 丨 丨 以 以 以 以 以 以 以 以 以 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The adhesive for electronic parts of the present invention contains a curable compound. Take in. The curable compound is not particularly limited, and for example, a compound which is modified by addition polycondensation, addition lis poly, re-addition, addition condensation or ring-opening polymerization can be used. Specific examples thereof include urea resin, three: gas amine resin, phenol resin, resorcin resin, epoxy resin, and acrylic acid; acid resin, polyester resin, polyamide resin, polybenzimidazole resin, and the like.邻笨13 200908166 Dicarboxylic acid di- propyl hydride (_ π ^ month 0, xylene resin, alkyl _ benzene resin, epoxy enoate resin, 矽榭 κ ^ tree 舳 虱 虱 , 山, mountain tree It is known that thermosetting compounds such as polyurethane resins are excellent in the reliability and the strength of the semiconductor device produced by the combination of ', and 9', so that the production of the sin I and the strong amine bismuth d acrylate resin It is better to have a oxy-resin with a 醯 月 月 月 月 月 月 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A variety of epoxy resin, Panlu #, A varnish type (four) type epoxy resin, three fragrant three-shrinkage and other aromatic epoxy resin, naphthalene type epoxy resin type 1 epoxy resin, mouth coat penta-thin Type epoxy resin, isophthalic acid (tetra) epoxy resin (m-phenylene diene X-glyceryl ether) and such hydrides, etc. Since an adhesive for electronic parts having high scratch resistance can be obtained, a naphthalene type epoxy resin type 1 epoxy resin and a stilbene type epoxy resin are preferable. The products that can be sold include the example of 士 Η · 、 2, HP-4032D, HP_4700, Hp_47〇1 (above, Dainipp〇n (4) V..

Chemicals公司製）等。又，該芴型環氧樹脂之中，市隹品 可列舉例如 EX-1010、101卜 1012、1〇2〇、1〇3〇、1{)4()、1()二了 1051、1060(以上，NAGASE CHEMTEX 公司製）等。又 該間苯二酚型環氧樹脂之中，市售品可舉例如Εχ_2〇ι (NAGASE CHEMTEX 公司製）等。 該萘型環氧樹脂、芴型環氧樹脂、間苯二酚型環氧樹 脂’以使用其軟化點在60°C以下之樹脂較佳。藉由使用軟 化點在60°C以下之樹脂，可減少為了降低電子零件用接著 劑之黏度而使用之稀釋劑等液狀成分的添加份數，而可製 14 200908166 ' 得在硬化時及硬化後揮發成分較少之電子零件用接著劑。 以使用軟化點在4(TC以下之樹脂更佳，再更佳為使用軟化 點在室溫以下之樹脂。該市售品之中，以Hp_4〇32、 4032D、EX-1020、及 EX-201 較佳。 在使用萘型環氧樹脂、芴型環氧樹脂或間苯二酚型環 氧樹脂其中一種或複數種作為該硬化性化合物時，該硬化 性化合物中該萘型環氧樹脂、苗型環氧樹脂或間苯二紛型 「 ^氧樹脂其中一種或複數種之摻合量的較佳下限為重 量％。若該萘型環氧樹脂、荀型環氧樹脂或間苯二齡型環 ㈣脂其t-種或複數種之摻合量未達4()重量％時，則有 時無法製得具有充分耐熱性之電子零件用接著劑。該萃型 環氧樹脂、苟型環氧樹脂或間苯二紛型環氧樹脂其^ 或複數種之摻合量的更佳τ限為6()重量％。又，該 氧樹脂、苟型環氧樹脂或間苯二紛型環氧樹脂里中二： 複數種之摻合量的較佳上限為9〇重量％。 、 或 ，亥環氧樹脂進一步可使用具有馳、咖 ::及丙稀酸橡膠等橡膠成分之橡膠改質環氧樹脂：可： :減合物等環氧化合物。使用此種環氧樹脂時，在： <可賦予柔軟性。又，亦可使用以往公知 該硬化性化合物，其吸濕率之較佳上限為：二 上限…。具有此種吸澡率之硬化性化合物，·;：佳 :蔡型環氧樹脂，環氧樹脂、倍環戊二烯型環氧：例 型環氧樹脂等。甲盼清漆型環氧樹脂、及間苯二盼 15 200908166 本發明之電子零件用接著劑係含有硬化劑。 ρ及硬化劑並無特別限制，可配合該硬化性化合物適當 I擇以往么知之硬化劑。在使用環氧樹脂作為硬化性化合 物時之硬化劑，可列舉例如三烷四氫鄰苯二甲酸酐等加熱 更化5L酉夂酐系硬化劑、⑲系硬化劑、胺系硬化劑、二氰二 胺等潛在性硬化劑、及陽離子系觸媒型硬化劑等。該等硬 化劑可單獨使用，亦可併用2種以上。 該硬化劑之推合量並無特別限制，在使用與該硬化性 化CT物之g此基等1反應的硬化劑時，相對於該該硬化性 化合物之官能基量，以80〜110當量較佳。又，若使用作 為觸媒功能之硬化劑時，相對於該硬化性化合#⑽重量 份，該硬化劑之摻合量的較佳下限為i重量份，較佳上限 為2 0重量份。 本發明之電子零件用接著劑，為了調整硬化速度或硬 化物之物性等’除了該硬化劑以外亦可進一步添加硬化促 進劑。 該硬化促進劑並無特別限制，可列舉例如咪唑系硬化 促進劑、及三級胺系硬化促進劑等。#中，由於易於進行 反應系統的控制（用以調整硬化速度或硬化物之物性），因 此適合使用咪唾系硬化促進劑。該等硬化促進劑可單獨使 用，亦可併用2種以上。 該’唑系硬化促進劑並無特別限制，可列舉例如以氰 乙基保護咪奴i位的L氰乙基_2_苯口米嗤、或以異三 酸保護驗性的㈣系、硬化促進劑（產品名「2ma_〇k， 16 200908166 國化成工業公司製）等。該等咪唑系硬化促進劑可單獨使 用，亦可併用2種以上。 該咪唑系硬化促進劑之摻合量並無特別限制，相對於 該硬化性化合物100重量份，較佳下限為1重量份，較佳 上限為10重量份。 該硬化劑及/或硬化促進劑，其熔點之較佳下限為120 °C。藉由使熔點在120°C以上，在將本發明之電子零件用 接著劑加熱時，可抑制凝膠化而可適當地接合半導體零件 及調整半導體零件間之距離。又，以硬化劑及硬化促進劑 中之任一者為粉體較佳。 該熔點為120°C以上之硬化劑，可列舉例如5-(2,5-二 氧四氫-3-苯基）-3-甲基-3-環己烯-1,2-二羧酸酐、TD-2090 等酚醛清漆樹脂、KH-6021等雙酚醛A清漆樹脂、KA-1165 等鄰曱酚清漆樹脂、EH-3636AS、EH-3842、EH-3780、 EH-43 3 9S、EH-4346S(以上，旭電化工業公司製）等二氰二 胺。 又，亦可適當使用以熔點在120°C以上之材質所被覆 之微膠囊型硬化劑。 該熔點在120°c以上之硬化促進劑，可列舉例如2MZ、 2MZ-P、2PZ、2PZ-PW、2P4MZ、C11Z-CNS、2PZ-CNS、 2PZCNS-PW、2MZ-A、2MZA-PW、C11Z-A、2E4MZ-A、 2MA-OK、2MAOK-PW、2PZ-OK、2MZ-OK、2PHZ、 2PHZ-PW ' 2P4MHZ、2P4MHZ-PW、2E4MZ-BIS、VT、 VT-OK、MAVT、MAVT-OK(以上，四國化成工業公司製） 17 200908166 等。特別是，以至】3(TC為止穩定，135〜2〇〇艽會活性化 之硬化促進劑較佳，該硬化促進劑之中，以2Ma_〇k、 2MAOK-PW較佳。在使用此等硬化促進劑時，可兼顧儲藏 穩定性、製程時對熱之穩定性及快速硬化性。 在使用環氧樹脂作為該硬化性化合物，且併用該硬化 劑與硬化促進劑時，硬化劑之摻合量以相對於環氧基理論 上所欲之當量以下較佳。若該硬化劑之摻合量超過理論上 所欲之當量時’有時會在硬化後因水分而易於使氯離子溶 析。亦即，若硬化劑過剩時，則例如以熱水從本發明之半 導體零件用接著劑之硬化物萃取出溶析成分時，由於萃取 =之pH為4〜5左右’因此有時氯離子會從環氧樹脂大量 洛析出。因此，將本發明之半導料件用接著劑之硬化物 ^、100 C之純水i〇g浸潰2小時後之純水的為6〜8 較t ’ pH為6.5〜7·5更佳。 人，不發明之電子 , ^ J 1文π π ’丨F句各次々无>1匕劑亦可 併用常溫下為固體t 3官能以上之酸肝硬化劑、與常溫下 為液體之2官能酸針硬化劑的電子零件用接著劑。可使本 ^明之電子零件用接著劑之251㈣彈性模數未達3奶， 二0〜。1 8(TC之溫度區域之儲藏彈性模數在麵Pa以上，㈣ c之孤度區域之儲藏彈性模數在丨以上。藉由 有此種'皿度區域之儲藏彈性模數’使用本發明之電子零 ::接者齊卜例如在接合半導體晶片與支持構件時，可使 槿：體3曰片之接著特性優異’可防止因半導體晶片盥支持 延伸率對溫度依存性之差異，而在半導體晶片產生 18 200908166 大的幫曲，此外亦可提高對所製造之 打線處理等的可靠性， +導體晶片積層體之 在併用，：靠f並且亦可確保耐焊料回焊性。 在併用该常溫下為固體之 與常溫下為液體之2w上之酸肝硬化劑、 件用接荖剞 n -硬化劑時，本發明之電子零 件用接者劑之硬化物，會成為具 ：于零 高彈性模數之基 -弹性模數之海成分與 、数之島成分的海島構造。且 .^. 成為高彈性模數且較硬…“ ’ 成分 劑之硬化物，^發明之電子零件用接著 島成刀將尚溫（例如 性模數保持於較高之㈣^ 175 C)之儲滅彈 才％孕乂冋之值（例如，3〇MPa以上 該海成分為低彈性桓| 矛 々见弹性換數且柔軟之部分 用接著劑之硬化物，i ^ ^ ^ # 該海成分將常溫（25。〇之儲藏彈 具==於較低之值(例如’未達_硬化物可藉由 ^ 構化’使該硬化物在常溫及高溫區域具有適度 14 1使半導體晶片等電子零件與支持構件之接著 “ V防止在接合於支持構件之半導體晶片等電子零 件產生大的彎曲。 —硬化物具有該儲藏彈性模數之本發明之電子零件用接 著刎在藉由例如後述方法（1)製作硬化物時，可藉由改變 該：溫下為固體之3官能以上之酸肝硬化劑、與常溫下為 液體之2官能酸酐硬化劑的摻合比來達成。具體而言，例 二適當調整常溫下為固體之3官能以上之酸酐硬化劑、與 下為液體之2官能基酸酐硬化劑的掺合比，即可將常 溫之儲藏彈性模數在1G()MPa〜3GPa之範圍内控制於所欲 之值，可充分緩合因半導體晶片等電子零件與基板之延伸 19 200908166 率對溫度依存性之差異所產生之應力，以防止在半導體叫 月等產生4曲。又’可將175°C以上之儲藏彈性模數在〇」 1 OOMPa之|&圍内控制於所欲之值，以提高在以本發明 之電子零件用接著劑所接著之半導體晶片實施打線處理 時、或焊料回焊過程等的製程可靠性。 在該硬化物具有海島構造時，高彈性模數之島成分之 直控的較佳下限為f) 1 „ * ^ 為0.1"01，較佳上限為ΙΟ/zm。若高彈性 核數之島成刀的直役未達Q i # m時，則該硬化物之島成 分會過小’有時無法確保高溫之彈性模數。若高彈性模數 之島成分的直徑超過10…夺，則有時常溫區域之柔軟性 會不足。高彈性模數之島成分之直徑的更佳下限為0_5" m，更佳上限為5" m。此外，該島成分之直徑，係意指將 本如明之電子零件用接著劑之硬化物切成厚度為Μ·，將 釕木色之後，以透過型電子顯微鏡（「jem2丨〇〇」、 公司製）觀察時’所能觀察之島部分的長邊。又，亦可使用 A™從海部分與島部分之彈性模數之差求得島部分之直 梭。此外’亦可使用紅外線分光，測# 3官能以上之酸酐 的存在部分，藉此測量島部分之直徑。 广在該硬化物中，以該島成分均勻分布於該海成分 中較佳。若該島成分之分布不均勻時，則在使用本發明之 電2零件用接著劑來接著電子零件與支持構件時，有時電 :零件與支持構件之接著會不均句、或硬化物之儲藏彈性 立數s不均勻。此外’該島成分均勻分布於該海成分係 思、指於任意之10/zmXl0"m内皆存在島與海。 20 200908166 在該硬化物具有該海島構造時，以該海成分之25t之 儲藏彈性模數未達1 GPa較佳。若該海成分之2rc之儲藏 彈性杈數超過1 GPa時’則該硬化物在常溫區域之柔軟性 曰不足，在使用本發明之電子零件用接著劑來接著電子零 牛人支持構件時’無法緩合因半導體晶片與支持構件之延 伸率對溫度依存性之差異所產生之應力，有時會在半導體 晶片產生彎曲。該海成分之25t之儲藏彈性模數之更佳上 限為0.8 GPa ’進一步更佳上限為〇 6必。 又，該島成分之25°C之儲藏彈性模數之較佳下限為 咖扛。若該島成分之25ΐ之儲藏彈性模數未達i Gpa時， 則無法將該硬化物纟高溫之彈性模數保持較高，如在使 用本發明之電子零件用接著劑進行半導體晶片與支持構件 之接合時，有時會無法對該半導體晶片進行打線處理。該 島成分之251之儲藏彈性模數之更佳下限為2(}pa，進二 步更佳下限為4GPa。 。此外，在該硬化物具有海島構造時，將該島成分之17〇 °c之儲藏彈性模數之值除以該海成分之17〇t之儲藏彈性 模數之值後之值的較佳下限為2。若該島成分之17〇。〇之 儲藏彈性模數之值除以該海成分t 17(^之儲藏彈性模數 之值後之值未達2時，則有時無法同時確保該硬化物中島 成分之高溫區域之彈性模數、與海成分之常溫區域之低彈 性模數。該島成分t 17(TC之儲藏彈性模數之值除以該海 成分之17CTC之儲藏彈性模數之值後之值的更佳下限為3， 進一步更佳下限為5。 21 200908166 此外，該海成分與島成分之彈性模數比，可使用例如 原子力顯微鏡（AFM)(「SPA-400」、SOUNDPROOF H〇USINC} 公司製）來測量。此外，構成該海成分之低彈性模數樹脂硬 化物，藉由使用IT measurement control公司製之黏彈性測 試機等來測量各樹脂硬化物之彈性模數，即可求出低彈性 模數之海成分與高彈性模數之島成分的彈性模數。 該常溫下為固體之3官能以上之酸酐硬化劑並無特別 /- 限制，3官能之酸酐硬化劑，可列舉例如酸酐苯偏三酸酐 寺，4官能以上之酸酐硬化劑可列舉例如苯均四酸酐、二 笨甲酮四缓酸酐、甲基環己稀四敌酸酐、及聚壬二酸針等： 該常溫下為液體之2官能酸酐硬化職無特別限制， 可列舉例如鄰苯二甲酸奸、六氫醜肝、甲基四氯耿肝、甲 基六氫欧酐、内亞甲四氫酜軒、甲基内亞甲四氫駄酐、及 無水順丁烯二酸等。 製備此種具有海島構造之硬化物的方法，可列舉例 使用含有由硬化性化合物與常溫下為固…官能以上之 酸軒硬化劑所構成之粒子(以下，亦稱為3官能以上之酸肝 硬化劑粒子）' 及硬化促進劑之本IM # 4 +發明之電子零件用接荽 劑’藉由硬化時之加妖，在— Η用接者 … 3 g能以上之酸酐硬化劑粒 子發生熔融擴散之範圍，形丄 ^办成问父聯之硬化物（島成分）， 另一方面藉由該硬化促進劑 W使熔融之3官能以上之酸酐 硬化劑粒子擴散區域以外之 ' 化物（海成分）的方法、及更 % ()使用含有硬化性化合物、硬化 促進名、及與該硬化性化 口物相溶性不佳之高反應性硬化 22 200908166 劑之本發日月之電子零件用 相溶性不佳之高反應性硬化；劑’藉由與該硬化性化合物 以形成高交聯之硬化物（島=僅使該硬化劑周圍高交聯 劑使該高交聯之硬化物周刀，另：方面以該硬化促進 聯之硬化物(海成分)的方去圍乂外之區域硬化’以得到低交 ^ 3 - 法。其中，可適當使用該方法（1)。 為二二==硬化劑粒子，其溶點之較佳下限Chemicals company) and so on. Further, among the enamel-type epoxy resins, for example, EX-1010, 101b 1012, 1〇2〇, 1〇3〇, 1{)4(), 1() 21051, 1060 can be cited. (above, NAGASE CHEMTEX company). Further, among the resorcinol-type epoxy resins, commercially available products include, for example, Εχ_2〇ι (manufactured by NAGASE CHEMTEX Co., Ltd.). The naphthalene type epoxy resin, the fluorene type epoxy resin, and the resorcinol type epoxy resin are preferably those having a softening point of 60 ° C or less. By using a resin having a softening point of 60 ° C or less, it is possible to reduce the number of parts of the liquid component such as a diluent used to reduce the viscosity of the adhesive for electronic parts, and it is possible to produce 14 200908166 'hardened and hardened. An adhesive for electronic parts with less volatile components. It is preferable to use a resin having a softening point of 4 (TC or less), and more preferably a resin having a softening point of not more than room temperature. Among the commercially available products, Hp_4〇32, 4032D, EX-1020, and EX-201 are used. Preferably, when one or more of a naphthalene type epoxy resin, a fluorene type epoxy resin or a resorcinol type epoxy resin is used as the curable compound, the naphthalene type epoxy resin and the seedling are in the curable compound. The preferred lower limit of the blending amount of one type or a plurality of types of the epoxy resin or the meta-phenylene type "oxygen resin" is % by weight. If the naphthalene type epoxy resin, the fluorene type epoxy resin or the isophthalene type When the amount of the t-type or a plurality of kinds of the ring (tetra) ester is less than 4% by weight, an adhesive for electronic parts having sufficient heat resistance may not be obtained. The oxygen resin or the meta-phenylene type epoxy resin has a better τ limit of 6 (% by weight) of the blending amount of the compound or the plurality of kinds of epoxy resins. Further, the oxygen resin, the oxime type epoxy resin or the isophthalic ring type ring In the oxyresin, the upper limit of the compounding amount of the plurality of kinds is 9% by weight. A rubber-modified epoxy resin having a rubber component such as a coffee, a coffee, and an acrylic rubber: an epoxy compound such as a compound: when using such an epoxy resin, it is: <softness can be imparted. Further, it is also possible to use a conventionally known curable compound, and a preferred upper limit of the moisture absorption rate is a second upper limit. A curable compound having such a bathing rate, preferably: a gel-type epoxy resin, an epoxy resin Resin, p-cyclopentadiene type epoxy: a case type epoxy resin, etc. A varnish type epoxy resin and an isophthalamide 15 200908166 The adhesive for electronic parts of the present invention contains a curing agent. There is no particular limitation, and a curing agent which is conventionally known can be appropriately selected in combination with the curable compound. Examples of the curing agent when an epoxy resin is used as the curable compound include heating and the like such as trioxane tetrahydrophthalic anhydride. 5L phthalic anhydride-based curing agent, 19-based curing agent, amine-based curing agent, latent curing agent such as dicyandiamide, and cationic catalyst-type curing agent, etc. These curing agents may be used singly or in combination. More than the above. In the case of using a curing agent which reacts with the base of the curable CT article, the amount of the functional group of the curable compound is preferably 80 to 110 equivalents. In the case of the hardener of the catalyst function, a preferred lower limit of the amount of the curing agent to be added is i part by weight, and a preferred upper limit is 20 parts by weight, based on the curing agent #10 parts by weight. The curing agent may be further added with a curing accelerator in addition to the curing agent in order to adjust the curing rate or the physical properties of the cured product. The curing accelerator is not particularly limited, and examples thereof include an imidazole-based curing accelerator and a tertiary amine system. A hardening accelerator or the like. In #, since it is easy to control the reaction system (to adjust the curing rate or the physical properties of the cured product), it is suitable to use a sodium salivation accelerator. These hardening accelerators may be used singly or in combination of two or more. The 'azole-based hardening accelerator is not particularly limited, and for example, a cyanoethyl group is used to protect the cyanoethyl 2 phenyl phenyl hydrazine, or an isotriic acid is used to protect the (four) system and harden. The accelerator (product name "2ma_〇k, 16 200908166, manufactured by Kokusai Kasei Kogyo Co., Ltd.), etc. These imidazole-based hardening accelerators may be used singly or in combination of two or more kinds. The amount of the imidazole-based hardening accelerator is The lower limit is preferably 1 part by weight, and the upper limit is preferably 10 parts by weight, based on 100 parts by weight of the curable compound. The preferred lower limit of the melting point of the curing agent and/or the hardening accelerator is 120 ° C. When the melting point of the electronic component of the present invention is heated at 120 ° C or higher, gelation can be suppressed, and the semiconductor component can be appropriately bonded and the distance between the semiconductor components can be adjusted. Any of the hardening accelerators is preferably a powder. The hardening agent having a melting point of 120 ° C or higher may, for example, be 5-(2,5-dioxotetrahydro-3-phenyl)-3-methyl. 3-cyclohexene-1,2-dicarboxylic anhydride, phenolic varnish resin such as TD-2090, bisphenol aldehyde A such as KH-6021 Lacquer resin, phthalic acid varnish resin such as KA-1165, EH-3636AS, EH-3842, EH-3780, EH-43 3 9S, EH-4346S (above, manufactured by Asahi Denki Kogyo Co., Ltd.). Further, a microcapsule-type curing agent coated with a material having a melting point of 120 ° C or higher can be suitably used. Examples of the curing accelerator having a melting point of 120 ° C or more include 2MZ, 2MZ-P, 2PZ, 2PZ-PW, and 2P4MZ, C11Z-CNS, 2PZ-CNS, 2PZCNS-PW, 2MZ-A, 2MZA-PW, C11Z-A, 2E4MZ-A, 2MA-OK, 2MAOK-PW, 2PZ-OK, 2MZ-OK, 2PHZ, 2PHZ- PW ' 2P4MHZ, 2P4MHZ-PW, 2E4MZ-BIS, VT, VT-OK, MAVT, MAVT-OK (above, manufactured by Shikoku Chemical Industry Co., Ltd.) 17 200908166, etc. In particular, even 3 (TC stable, 135~ It is preferable that the hardening accelerator which is activated is 2Ma_〇k and 2MAOK-PW among the hardening accelerators. When using such a hardening accelerator, both storage stability and process can be considered. For the stability of heat and rapid hardenability. When an epoxy resin is used as the curable compound, and the hardener and the hardening accelerator are used in combination, the blending amount of the hardener is relative to The oxy group is theoretically preferred to be equivalent to or less. If the amount of the hardening agent exceeds the theoretically desired equivalent, it is sometimes easy to cause chloride ions to elute due to moisture after hardening. When the amount of the agent is excessive, for example, when the eluted component is extracted from the cured product of the semiconductor component adhesive of the present invention by hot water, the pH of the extraction is about 4 to 5, so that the chloride ion may be largely from the epoxy resin. Luo precipitated. Therefore, the semi-conductive material of the present invention is impregnated with the hardened material of the adhesive agent, 100 C of pure water i〇g for 2 hours, and the pure water is 6-8, which is more than t 'pH 6.5~7·5. good. People, not inventing electrons, ^ J 1 text π π '丨F sentence each time no &1 匕 亦可 亦可 亦可 亦可 匕 匕 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可 亦可An adhesive for electronic parts of acid needle hardeners. The 251 (four) elastic modulus of the adhesive for electronic parts of the present invention can be made up to 3 milk, 2 0~. 1 8 (the storage elastic modulus of the temperature region of TC is above the surface Pa, and (4) The storage elastic modulus of the solitude region of c is above 丨. The invention is used by having such a storage elastic modulus of the 'span area' The electronic zero:: pick-up, for example, when bonding the semiconductor wafer and the supporting member, the bonding property of the 曰:3 曰 优异 can be prevented to prevent the difference in temperature dependence of the elongation of the semiconductor wafer , The semiconductor wafer generates 18 200908166 large bundles, and also improves the reliability of the wire bonding process and the like, and the conductor wafer laminates are used in combination: f and also ensure solder reflow resistance. When the acid cirrhosis agent is used as a solid at room temperature and the liquid cirrhosis agent is used as a liquid at room temperature, the hardened material of the connector for an electronic component of the present invention becomes: The base of the elastic modulus-the sea-component of the elastic modulus and the island structure of the island component of the number, and the ^^. becomes a high elastic modulus and is hard..." 'The hardening of the component agent, ^ the electronic component of the invention is used Island into a knife will be still warm ( If the sexual modulus is kept at a higher level (4)^ 175 C), the value of the predator is only 5% of the pregnancy value (for example, the sea component is lower than 3 MPa MPa). The spear sees the elastic part and the soft part. Using the hardener of the adhesive, i ^ ^ ^ # The sea component will be at room temperature (25. The storage elastics of the crucible == at a lower value (for example, 'not reaching _ hardened material can be cured by ^' The material has an appropriate degree in the normal temperature and high temperature region, so that the electronic component such as the semiconductor wafer and the supporting member are subsequently "V prevented from being greatly bent in the electronic component such as the semiconductor wafer bonded to the supporting member. - The cured product has the storage elastic modulus In the electronic component of the present invention, when a cured product is produced by, for example, the method (1) described later, it is possible to change the three-functional acid liver hardener which is solid at a temperature and the liquid function at room temperature. The blending ratio of the acid anhydride hardener is achieved. Specifically, in Example 2, the blend ratio of the trifunctional or higher acid anhydride hardener which is solid at normal temperature and the liquid bifunctional acid anhydride hardener can be appropriately adjusted. Storage modulus at room temperature is 1G () MPa The value of 3GPa is controlled to a desired value, and the stress caused by the difference in temperature dependence between the electronic component such as the semiconductor chip and the substrate can be sufficiently moderated to prevent the occurrence of four songs in the semiconductor. In addition, the storage elastic modulus of 175 ° C or higher can be controlled at a desired value in the range of 1 1 1 OO MPa to improve the wire bonding of the semiconductor wafer to which the adhesive for electronic parts of the present invention is applied. Process reliability during processing, or solder reflow process, etc. When the cured material has an island structure, the preferred lower limit of the direct control of the island component of the high elastic modulus is f) 1 „ * ^ is 0.1 " 01, The preferred upper limit is ΙΟ/zm. If the direct operation of the island with a high elastic modulus is less than Q i # m, the island component of the hardened material will be too small. Sometimes the elastic modulus of high temperature cannot be ensured. If the diameter of the island component of the high elastic modulus exceeds 10, the softness in the normal temperature region may be insufficient. A lower limit of the diameter of the island component of the high elastic modulus is 0_5" m, and a higher limit is 5" m. In addition, the diameter of the island component means that the cured product of the electronic component of the present invention is cut into a thickness of Μ·, and after the eucalyptus color, the transmission electron microscope ("jem2丨〇〇", company The long side of the part of the island that can be observed when observing. Further, the direct shuttle of the island portion can be obtained by using the difference between the elastic modulus of the sea portion and the island portion by the ATM. Further, it is also possible to measure the diameter of the island portion by using infrared spectroscopy to measure the presence of the anhydride of the tri- or higher functional group. It is preferred that the hardened material is uniformly distributed in the sea component as the island component. When the distribution of the island components is not uniform, when the electronic component and the supporting member are used in the adhesive for the electric two parts of the present invention, the electric component and the supporting member may be followed by an uneven sentence or a cured product. The storage elastic number s is uneven. In addition, the island component is evenly distributed in the sea component system, meaning that there are islands and seas in any 10/zmXl0"m. 20 200908166 When the cured product has the sea-island structure, it is preferable that the storage elastic modulus of 25 t of the sea component is less than 1 GPa. When the storage elastic modulus of the 2rc of the sea component exceeds 1 GPa, the softness of the cured product in the normal temperature region is insufficient, and when the electronic component adhesive of the present invention is used to follow the electronic zero-human support member, it is not slow. The stress caused by the difference in temperature dependence between the elongation of the semiconductor wafer and the supporting member may sometimes cause bending in the semiconductor wafer. A better upper limit of the storage elastic modulus of the sea component of 25t is 0.8 GPa'. Further, the upper limit is 〇6. Further, the lower limit of the storage elastic modulus of the island component at 25 ° C is curry. If the storage elastic modulus of the 25 ΐ component of the island component is less than i Gpa, the elastic modulus of the cured product 纟 high temperature cannot be kept high, for example, the semiconductor wafer and the supporting member are used for the adhesive for electronic parts of the present invention. At the time of bonding, the semiconductor wafer may not be wire-bonded. The lower limit of the storage elastic modulus of the island component 251 is 2 (} pa, and the lower limit of the second step is 4 GPa. In addition, when the hardened material has an island structure, the island component is 17 ° ° C The preferred lower limit of the value of the storage elastic modulus divided by the value of the storage elastic modulus of 17 〇t of the sea component is 2. If the island component is 17 〇, the value of the storage elastic modulus of 〇 is divided When the value of the storage elastic modulus of the sea component t 17 (^) is less than 2, the elastic modulus of the high temperature region of the island component in the hardened material and the normal temperature region of the sea component may not be ensured at the same time. Elastic modulus. The lower limit of the value of the island component t 17 (the value of the storage elastic modulus of TC divided by the value of the storage elastic modulus of 17 CTC of the sea component is 3, and the further lower limit is 5. 21) 200908166 In addition, the elastic modulus ratio of the sea component to the island component can be measured by, for example, an atomic force microscope (AFM) ("SPA-400", manufactured by SOUNDPROOF H〇USINC). In addition, the low elasticity of the sea component is formed. Modular resin hardened by using the viscosity of IT measurement control An elastic tester or the like measures the modulus of elasticity of each resin cured product, and the elastic modulus of the sea component of the low elastic modulus and the island component of the high elastic modulus can be obtained. The trifunctional or higher acid anhydride of the solid at normal temperature The hardening agent is not particularly limited, and the trifunctional acid anhydride curing agent may, for example, be an anhydride phthalic anhydride, and the tetrafunctional or higher acid anhydride curing agent may, for example, be pyromellitic anhydride, dimercapto ketone tetraacetic anhydride, or The base ring is dilute tetrahydroanhydride, and the polyphthalic acid needle, etc.: The bifunctional anhydride hardening which is liquid at normal temperature is not particularly limited, and examples thereof include phthalic acid, hexahydro ugly liver, and methyl tetrachloroguanidine. Liver, methyl hexahydro uric anhydride, endogenous tetrahydrofuran, methyl endois tetrahydrophthalic anhydride, anhydrous maleic acid, etc. Preparation of such a hardened material having an island structure can be listed For example, a particle (hereinafter, also referred to as a trifunctional or higher acid liver hardener particle) composed of a curable compound and an acid curing agent having a function of at least a normal temperature (hereinafter, also referred to as a trifunctional or higher acid liver hardener particle) and a curing accelerator are used. +Invented electronic component adhesives Adding demon from hardening, in the range of - Η ... ...... 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 The hardening accelerator W is a method of using a compound (sea component) other than the molten trifunctional or higher acid anhydride hardener particle diffusion region, and more preferably contains a curable compound, a hardening accelerator name, and the curable property. Highly reactive hardening with poor compatibility of the oral cavity 22 200908166 The high-reactivity hardening of electronic components with poor compatibility; the agent 'by forming a highly crosslinked hardened material with the hardening compound (island) = only the high cross-linking agent around the hardener causes the high-crosslinking hardened material to be knives, and the other side is hardened by the hardening-promoting hardened material (sea component) to obtain a low area Submit ^ 3 - method. Among them, the method (1) can be suitably used. For the second two == hardener particles, the lower limit of the melting point

合物相溶性::之方達二時，則若不選擇咖 散於本發明之電二用：則會在較低溫成為液態而擴 化時之… 劑中，導致有時難以藉由硬 H亥方法（1)形成所欲之海島構造。此外，在將 3官能基以上之酸酐硬化劑粒子選擇成與該環氧化合物相 洛性不佳時，亦可使用溶點未達8Gn 3官能以上之酸肝 硬化劑粒子。 — 該3官能以上之酸酐硬化劑粒子的平均粒徑，較佳下 限為O.Um，較佳上限為1〇心。若該3官能以上之酸酐 硬化劑粒子的平均粒徑未達〇.1…寺，硬化時即使可形 =島構造，島成分亦會過小，而無法達成在高溫區域： 咼弹性杈數。若該3官能以上之酸酐硬化劑粒子的平均粒 徑超過10 // m時，則硬化時島成分會過大，導致在常溫區 域下之柔軟性會不足，而無法改善半導體晶片等電子零件 之彎'曲。 又，本發明之電子零件用接著劑，亦可在不阻礙本發 明之效果的範圍内含有稀釋劑。 該稀釋劑係以能在本發明之電子零件用接著劑加熱硬 23 200908166 化時進入硬化物之反應性稀釋劑較佳。其中 ； 硬化物之接著可靠性惡化，以〗八 ‘、、、了不使该 基之反應性稀釋劑較佳。 具彳2個以上官能 此種反應性稀釋劑，可列舉例如脂 環氧乙炫改質環氧樹脂、環氧丙院改質環氧樹月t 型環氧樹脂、倍環戊二烯型環氧 a %己烷 在太心明紛駿型環氧樹腊等。 在本發明之電子零件用接 旦并—& ， 有^ 3有该稀釋劑時，其含 里並無特別限制，相對於本發 吋具含 奴a(電子零件用接著劑所含 有之硬化性化合物之合計〗〇 ,yV > /+ 垔重伤，較佳下限為1重量 铋，較佳上限為5〇重量份。 置里 旦 77右3玄稀釋劑之含量未達丨重 董伤時，則有時幾乎無本媒 稀釋❹人曰如 稀釋劑之效果。若該 ^之31超過50 ί量份時，則有時會使本發明之電 子令件用接著劑的接著可靠性變差、 ,,, X/去獲传後述點唐 寸性。該稀釋劑之含量的更佳 為20重量份。 3 5重！伤，更佳上限 本發明之電子零件用接著劑，以進一步含有具能斑該 硬化性化合物反應之官能基的高分子化合物較佳。藉由含 有此種高分子化合物’可提升因熱導致變形時的接合可靠 性。 具有能與該硬化性化合物反應之官能基的高分子化合 物，在使用環氧樹脂作為該硬化性化合物時，可列舉例Ζ ，有胺基、聚胺醋基、醯亞胺基、經基、絲、及環氧基 等之高分子化合物等。其中’以具有環氧基之高分心 物較佳。藉由添加具有該環氧基之高分子化合物，本發明 24 200908166 之電子零件用接著劑之硬化物可顯現優異之可撓性。亦 即本毛月之電子零件用接著劑之硬化物，可兼具源自具 有以屬硬化性化合物之多環式經骨架為主鏈的優異機械強 度、耐熱性及耐濕性、與源自具有該環氧基之高分子化合 物的優異可撓性。因此，本發明之電子零件用接著劑之硬 化物，具有優異之耐冷熱循環性、耐桿料回焊性、及尺寸 穩疋性等，並顯現高接著可靠性或高絕緣可靠性。 该具有環氧基之高分子化合物，只要是在末端或側鏈 (懸木位）其中之一具有環氧基之高分子化合物即可，可列 舉例如含環氧基之丙稀酸橡膝、含環氧基之丁二稀橡膠、 雙酉分型高分子量環氧樹脂、含環氧基之苯氧樹月旨、含環氧 基之丙烯酸樹脂、含環氧基之聚胺醋樹脂、含環氧基之聚 酉旨樹脂等。其中，由於可製得含大量環氧基之高分子化合 物，而構成機械強度或耐熱性更優異之硬化物，因此可適 -使用含環氧基之丙烯酸樹脂。此等具有環氧基之高分子 化合物，可單獨使用，亦可併用2種以上。 在使用該具有環氯其#古^211, „ 氧土之间刀子化合物，特別是使用含 =基之丙烯酸樹脂’作為具有能與該硬化性化合物反應 之β旎基的高分子化合物時，重 … .t ^ I重十均分子量之較佳下限 两1萬。若重量平均分早吾本，去，# 突 未達1萬時，則本發明之電子 “子：：劑之造膜性會不足’有時無法充分提升本發明 电子零件用接著劑之硬化物的可撓性。 在使用該具有該環氧基 含㈣其々. 録之同刀子化合物，特別是使用 基之㈣酸樹脂’作為具有能與該硬化性化合物反 25 200908166 應之g月匕基的南分合妨ϊ B本，& 门刀卞化σ物日寻，％乳當量之較佳下限為 2〇〇,較佳上限為1000。若環氧當量未達2〇〇時，則有時 會無法充分提升本發明之電子零件用接著劑之硬化物的可 撓性。若環氧當量超過1000時，則有時本發明之電子零 件用接著劑之硬化物的機械強度或耐熱性會不足。 具有能與該硬化性化合物反應之官能基的高分子化合 物摻合量並無特別限制，相對於該硬化性化合物1〇〇重量 份，較佳下限為1重量份，較佳上限為2〇重量份。若具 ί «與該硬化性化合物反應t官能基的高分子化合 量未達1重量份時，則會無法獲得對熱變形之充分可靠性。 若具有能與該硬化性化合物反應之官能基的高分子化合物 摻合量超過20重量份時，則有時耐熱性會降低。 本發明之電子零件用接著劑，進一步以含有搖變劑 (thiX〇tropy_imparting agent)較佳。藉由含有搖變劑，可使 本發明之電子零件用接著劑達成所欲之黏度特性。 ㈣變劑並無特別限制，可使_如金屬微粒、碳酸 I約、燦石夕土（fumed silica)、氧化mm⑽、及 硼酸鋁等無機微粒。其中，以燻矽土較佳。 又’該搖變劑，視須要’亦可使用經進行表面處理者。 特別是以使用表面具有疏水基之粒子較佳。具體而言，以 使用例如表面經疏水化之燻矽土等較佳。 在使用粒狀搖變劑作為該搖變劑時，平均粒徑之較佳 上限為bm。若該榣變劑之平均粒徑超過一時，則有 時無法顯現所欲之搖變性。 26 200908166 該搖變劑之摻合量並無特別限制 量％，較佳上限為20重量％。若該 下限為〇·5重 重量％時，則A# 變刎之摻合量未達〇.5 …、沄獲仔充分之搖變性。 量超過20重量％時，則在接合 右该搖變劑之摻合 則有時會降低本發明之電子零體：：等電子零件時， 變劑之摻合量的更佳 者劑的排除性。該搖 %。 為2重量％，較佳上限為10重量 本發明之電子零件用接著劑，視須要 該溶劑並無特別限制，可列舉例如芳二3有溶劑。 芳香族煙類 '氯化脂肪族煙類、醇類 二類酌氯化 本發明之電子零㈣族煙類等。 離子交換體。 劑，視須要，亦可含有無機 該無機離子交換體之中’市售 亞合成公司製）等。 1 J # ΙχΕ系列（東 該無機離子交換體之摻合量並 為1重量％，較佳上限為10重量％。 車交佳下限 此外，本發明之電子零件用接著劑， 有其他防析出劑"米切院偶合劑等接著性賦添亦可含 劑。 者〖生賦予劑等添加 :防析出劑以經表面親水化處理之⑽土較佳。 本兔明之電子零件用接著劑，在接合 他電子零件、或該雷 β電子零件與其Compatibility of the compound: When the square is up to 2, if the coffee is not used in the invention, it will be used in the case where the liquid is expanded at a lower temperature and the product is expanded. Method (1) forms the desired island structure. Further, when the trifunctional or higher acid anhydride hardener particles are selected to have poor compatibility with the epoxy compound, acid liver hardener particles having a melting point of less than 8 Gn 3 or more may be used. The average particle diameter of the trifunctional or higher acid anhydride hardener particles is preferably O.Um, and the upper limit is preferably 1 〇. If the average particle diameter of the trifunctional or higher acid anhydride hardener particles is less than 〇.1... Temple, even if the shape of the island structure is hardened, the island component is too small to reach the high temperature region: 咼 elastic number. When the average particle diameter of the trifunctional or higher acid anhydride hardener particles exceeds 10 // m, the island component is too large at the time of curing, and the flexibility at room temperature is insufficient, and the bending of electronic parts such as semiconductor wafers cannot be improved. 'song. Further, the adhesive for electronic parts of the present invention may contain a diluent in a range that does not impair the effects of the present invention. The diluent is preferably a reactive diluent which can enter the hardened material when the adhesive for electronic parts of the present invention is heated. Wherein, the reliability of the cured product deteriorates, and it is preferred that the reactive diluent of the base is not used. Examples of the reactive diluent having two or more functionalities include, for example, a lipid epoxy modified epoxy resin, a modified epoxy epoxy resin t-epoxy resin, and a cyclopentadiene ring. Oxygen a % hexane in the Taixin Mingjun type epoxy tree wax and so on. In the case of the electronic component of the present invention, when there is a thinner, there is no particular limitation on the content of the thinner, and the hardener contained in the adhesive for the electronic component is contained. The total amount of the compound 〇, yV > / + 垔 serious injury, the preferred lower limit is 1 weight 铋, the preferred upper limit is 5 〇 parts by weight. The content of the Lidan 77 right 3 Xu thinner does not reach the weight of the Dong , sometimes there is almost no effect of diluting the sputum such as a diluent. If the 31 of the film exceeds 50 Å, the subsequent reliability of the adhesive for the electronic component of the present invention may be deteriorated. , , , , X / to be transmitted after the point is said. The content of the diluent is more preferably 20 parts by weight. 3 5 weight! Injury, better upper limit of the adhesive for electronic parts of the present invention, to further contain It is preferable that the polymer compound capable of reacting the functional group reactive with the curable compound can improve the bonding reliability at the time of deformation due to heat by containing such a polymer compound. The functional group capable of reacting with the curable compound Polymer compound, using epoxy resin as the curability Examples of the compound include a polymer compound such as an amine group, a polyaminoacetate group, a quinone imine group, a trans-group, a silk, and an epoxy group. Among them, a high-dispensing substance having an epoxy group Preferably, by adding a polymer compound having the epoxy group, the cured product of the adhesive for electronic parts of the present invention 24 200908166 can exhibit excellent flexibility, that is, the hardening of the adhesive for electronic parts of the present month. And the excellent mechanical strength, heat resistance and moisture resistance derived from a polycyclic skeleton having a sclerosing compound as a main chain, and an excellent flexibility derived from a polymer compound having the epoxy group Therefore, the cured product of the adhesive for electronic parts of the present invention has excellent cold-heat cycle resistance, rod reflow resistance, dimensional stability, and the like, and exhibits high reliability or high insulation reliability. The polymer compound having an epoxy group may be a polymer compound having an epoxy group at one of a terminal or a side chain (suspension), and examples thereof include an epoxy group-containing acrylic rubber knee. Epoxy-containing dibutyl rubber A double-twisted type high molecular weight epoxy resin, an epoxy group-containing phenoxy tree, an epoxy group-containing acrylic resin, an epoxy group-containing polyamine resin, an epoxy group-containing polyether resin, and the like. Among them, since a polymer compound containing a large amount of epoxy groups can be obtained, and a cured product having more excellent mechanical strength or heat resistance can be obtained, an epoxy group-containing acrylic resin can be suitably used. Molecular compounds may be used singly or in combination of two or more. In the case of using the chlorobenzene, #古^211, „ between the oxo, the knives, especially the acrylic resin containing the group, as having the ability to harden When the compound reacts with the β-mercapto polymer compound, the weight of the .t ^ I weight is preferably a lower limit of two 10,000. If the weight average is earlier, if it is less than 10,000, then In the electronic "sub-component of the present invention, the film-forming property of the agent may be insufficient", the flexibility of the cured product of the adhesive for electronic parts of the present invention may not be sufficiently improved. In the use of the epoxy group containing (iv) its oxime. Recorded with the same knife compound, especially the use of the base (tetra) acid resin as a southern branch with the ability to react with the hardening compound 25 200908166 ϊ B, & knives 卞 物 日 日 , , , , , 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳When the epoxy equivalent is less than 2 Å, the flexibility of the cured product of the adhesive for electronic parts of the present invention may not be sufficiently improved. When the epoxy equivalent exceeds 1,000, the mechanical strength or heat resistance of the cured product of the adhesive for electronic parts of the present invention may be insufficient. The blending amount of the polymer compound having a functional group reactive with the curable compound is not particularly limited, and a preferred lower limit is 1 part by weight, and a preferred upper limit is 2 〇 by weight based on 1 part by weight of the curable compound. Share. If the amount of the polymer compound of the t-functional group reacted with the curable compound is less than 1 part by weight, sufficient reliability against thermal deformation cannot be obtained. When the amount of the polymer compound having a functional group reactive with the curable compound exceeds 20 parts by weight, the heat resistance may be lowered. The adhesive for electronic parts of the present invention is further preferably a thiX〇tropy_imparting agent. By containing a rocking agent, the adhesive for electronic parts of the present invention can be used to achieve desired viscosity characteristics. (4) The modifier is not particularly limited, and may be inorganic particles such as metal fine particles, carbonic acid I, fumed silica, oxidized mm (10), and aluminum borate. Among them, the smoked bauxite is preferred. Further, the shaker may be used as it is. In particular, it is preferred to use particles having a hydrophobic group on the surface. Specifically, it is preferred to use, for example, a surface-hydrophobized smoked earth. When a particulate shaker is used as the shaker, the preferred upper limit of the average particle diameter is bm. If the average particle diameter of the mutagenic agent exceeds one hour, the desired shake degeneration is sometimes not exhibited. 26 200908166 The blending amount of the rocking agent is not particularly limited, and the upper limit is preferably 20% by weight. If the lower limit is 〇·5 wt%, then the blending amount of A# 刎 未 does not reach 〇.5 ..., and the ridge is fully shaken. When the amount exceeds 20% by weight, the blending of the rocking agent on the right side may reduce the exclusion of the better amount of the blending agent of the electronic component of the present invention. . The shake %. 2% by weight, and a preferred upper limit is 10%. The solvent for the electronic component of the present invention is not particularly limited as long as it is necessary, and examples thereof include a solvent of aryldicarbonate. Aromatic smog 'chlorinated aliphatic smog, alcohol, two types of chlorination of the present invention, the electronic zero (four) family of tobacco and the like. Ion exchanger. The agent may contain, if necessary, an inorganic inorganic ion exchanger (manufactured by a commercially available sub-synthesis company). 1 J # ΙχΕ series (the amount of the inorganic ion exchanger to be mixed is 1% by weight, preferably 10% by weight. The lower limit of the car is better than the adhesive for electronic parts of the present invention, and there are other anti-precipitation agents. "Mitchener coupling agent and other additives can also be added. It is added to the raw agent, etc.: The anti-precipitation agent is preferably hydrolyzed by the surface (10). The rabbit is used as an adhesive for electronic parts. Joining his electronic parts, or the Thunder’s electronic parts

型s ^ 零件與支持構件之溫度下，使用F 计以1〇rPm所測得之黏度的上限為5〇Pa.s。若在接 27 200908166 合=電子零件與其他電子零件、或該電子零件與支持構件 下使用E型黏度計以10rPm所測得之黏度的上限 ^ s時，則在使用本發明之電子零件用接著劑，進 Γ:子零件彼此等之接合時，會無法充分排除間隔粒子與 ^件或支持構件間之接著齊卜結果會使所要接合之電 =件間等_間距離大於所欲之值。在接合該電子零件 …他電子零件、或該電子零件與支持構件之溫度下，使 E型黏度計以10rpm所測得之黏度的較佳上限為20pa. s ’更佳上限為10pa.s。 又纟該接合溫度使用E型黏度計所測得之1〇rpm之 :度的較佳下限為5Pa.s。若在該接合溫度…型黏度 啊之黏度未達5Pa.s時，則在接合電子零件盘盆 他電子零件、亦齋2 & ^ — 牛與支持構件時，有時會產生溢出 專而難以確保塗布形狀穩定性。 本發月之電子零件用接著劑，在使用ε 於測量黏度時，。.一黏度的較佳下限一 =限為2〇"a.s。若使用Ε型黏度計以饥、。5-垃牛測得的黏度未達齋"時，則本發明之電子零件用 〇者劑有時會欠缺形狀保持性。若使用E型黏度計以25t：、 子5ΓΓ之條件測得的黏度超過2〇op"時，則本發明之電 々用接著劑有時會欠缺吐出穩定性。 此外’本發明之電子零件用接著劑，以使用E型黏度 二声二C、lrPm之條件所測得的黏度為T1，以使用E型 黏度叶在2 5 °Γ、1 η 〇rpm之條件所測得的黏度為Τ2時，較 28 200908166 2為Tim之下限為2，上限為6。藉由使該τι/τ2在該 耗圍内，可使本發明之電子零件用接著劑具有適合塗布之 搖變性。 本發明之電子零件用接著劑，可藉由例如將該硬化性 化合物、硬化劑、及視須要所添加之硬化促進劑、稀釋劑、 其他添加劑等以既定量掺合並加以混合後，進一步換合間 隔粒子之方法來製造。 π °亥此合之方法並無特別限制，可使用例如行星式攪拌 < 益、4亍星式混合機、白；I®八At iili .J. 勺相刀政機、萬用混合機、密閉式混 煉機、及揉合機等方法。 使用本發明之電子零件用接著劑，將一半導體晶片積 層於其他半導體晶片或支持構件之方法，可適當使用具有 下步驟之方法.⑴塗布步驟，係將本發明之電子零件用 :著劑塗布於該半導體晶片或支持構件，以形成接著劑 二⑺+日導體晶片積層步驟’係透過該接著劑層來積層該 f …體曰曰片及0)硬化步驟，係使該一半導體晶片與該 他半導體晶片或支持構件間之接著劑層硬化。此料導 體晶片之積層方法亦為本發明之一。 本發明之半導體晶片之積層方法，視須要，亦可在⑴ “步驟之後，進行溶劑乾燥或B階段化。 驟本發明之半導體晶片之積層方法，係具有⑴塗布步 用以將本發明之電子零件用接著劑塗布於該半導體晶 或支持構件，以形成接著劑層。 /⑴塗布步驟中’將本發明之電子零件用接著劑塗布 29 200908166 於該半導體晶片或支持構件之方法，並無特別限制，可列 舉例如滴注、喷墨法、網版gp jg丨 網版印刷、平版印刷及凹版印刷法 等以往公知之塗布法或印刷法等。 f. 形成於该该半導體晶片或支持構件之接著劑層的厚 度，、要疋至^大於所要製造之半導體晶片積層體之半導 體晶片的間隔者，則無特別限制，相對於所要製造之半導 體晶片積層體之半導體晶片的間隙間距離，以在30倍以 内較佳。若形成於該半導體晶片或支持構件之接著劑層的 厚度超過30倍時，則有時會難以以所欲之間隔來製造半 導體晶片積層體。形成於該該半導體晶片或支持構件之接 著劑層的厚度，更佳為2〇倍以内。 本發明之半導體晶片之積層方法，係具有半導體晶片 積層步驟⑺，用以透過該接著劑層來積層該一半導體晶 片。 本半導體晶片積層步驟⑺中’藉由所要積層之該一半 i 導體晶片，施加按壓於該接著劑層，使該接著劑層之厚度 成為目標之半導體晶片積層體之半導體晶片的間隔。 藉由經過本步驟，形成使本發明之電子零件用接著劑 所含之間隔粒子之平均粒徑相對於接著劑層之厚度成為 〜70%的接著劑層。 本發明之半導體晶片之積層方法，係具有⑺硬化步 吏該一半導體晶片與該其他半導體晶片或支持構 件間之接耆劑層硬化。 使該接著劑層硬化之方法，並無特別限制，可配合本 30 200908166Type s ^ At the temperature of the part and the supporting member, the upper limit of the viscosity measured by 1 〇 rPm using F is 5 〇 Pa.s. If the upper limit ^ s of the viscosity measured by the E-type viscometer at 10 rPm is used under the connection of the electronic parts and other electronic parts, or the electronic parts and the supporting members, then the electronic parts of the present invention are used. Agent, when the sub-parts are joined to each other, the result of the separation between the spacer particles and the supporting member or the supporting member may not be sufficiently eliminated, so that the distance between the electric components to be joined is greater than the desired value. The preferred upper limit of the viscosity of the E-type viscometer measured at 10 rpm is 20 pa.s'. The upper limit is 10 la.s at the temperature at which the electronic component, the electronic component, or the electronic component and the supporting member are joined. Further, the bonding temperature is 1 rpm as measured by an E-type viscometer: a preferred lower limit of the degree is 5 Pa.s. If the viscosity of the bonding temperature is less than 5 Pa.s, it is sometimes difficult to overflow when joining the electronic parts, electronic components, and the support components. Ensure coating shape stability. This month's monthly adhesive for electronic parts, when using ε to measure viscosity. The preferred lower limit of a viscosity is limited to 2〇"a.s. If you use a sputum type viscometer to hungry. When the viscosity measured by the 5-rath is not reached, the translucent agent for electronic parts of the present invention sometimes lacks shape retention. When the viscosity measured by the E-type viscometer is more than 2 〇 op" measured under the conditions of 25t:, sub-5ΓΓ, the electrical adhesive for use in the present invention may lack the discharge stability. Further, the adhesive for electronic parts of the present invention has a viscosity of T1 measured under the conditions of E-type two-tone two C, lrPm, and the condition of using E-type viscosity leaves at 25 ° 1, 1 η 〇 rpm. When the measured viscosity is Τ2, the lower limit of Tim is 2 and the upper limit is 6 compared with 28 200908166 2 . By making the τι / τ2 within the consuming range, the adhesive for electronic parts of the present invention can be made to have a suitable deflection for coating. The adhesive for electronic parts of the present invention can be further blended by, for example, mixing the curable compound, the curing agent, and the hardening accelerator, diluent, other additives, and the like which are added as needed. Manufactured by spacer particles. The method of π ° hai is not particularly limited, and for example, planetary stirring < yi, 4 comet type mixer, white; I® 八 At iili. J. spoon knives machine, universal mixer, Closed kneader, and kneading machine. A method of laminating a semiconductor wafer to another semiconductor wafer or a supporting member using the adhesive for electronic parts of the present invention, and a method having the following step can be suitably used. (1) Coating step for coating an electronic component of the present invention with a coating agent Forming the semiconductor wafer or the supporting member to form an adhesive two (7) + a day conductor wafer lamination step 'to pass the adhesive layer to laminate the f body sheet and 0) a hardening step to bond the semiconductor wafer to the semiconductor wafer The adhesive layer between his semiconductor wafer or supporting member is hardened. The lamination method of the material conductor wafer is also one of the inventions. The method for laminating a semiconductor wafer of the present invention may be subjected to solvent drying or B-stage after (1) "steps." The method for laminating a semiconductor wafer of the present invention has (1) a coating step for using the electron of the present invention. The component is coated on the semiconductor crystal or the supporting member with an adhesive to form an adhesive layer. / (1) In the coating step, the method of coating the electronic component of the present invention with the adhesive 29 200908166 on the semiconductor wafer or the supporting member is not particularly Examples of the limitation include a conventionally known coating method, printing method, and the like, such as dripping, inkjet method, screen gp jg 丨 screen printing, lithography, and gravure printing method, etc. f. formed on the semiconductor wafer or supporting member The thickness of the layer of the second layer is not particularly limited as long as it is larger than the gap between the semiconductor wafers of the semiconductor wafer laminate to be fabricated, and the distance between the gaps of the semiconductor wafer of the semiconductor wafer laminate to be fabricated is 30 or less is preferable. If the thickness of the adhesive layer formed on the semiconductor wafer or the supporting member exceeds 30 times, sometimes It is difficult to manufacture a semiconductor wafer laminate at a desired interval. The thickness of the adhesive layer formed on the semiconductor wafer or the supporting member is more preferably within 2 。. The semiconductor wafer stacking method of the present invention has a semiconductor. a wafer lamination step (7) for laminating the semiconductor wafer through the adhesive layer. In the semiconductor wafer lamination step (7), by applying the half of the i-conductor wafer to be laminated, pressing the adhesive layer to make the adhesive The thickness of the layer serves as a space between the semiconductor wafers of the target semiconductor wafer laminate. By this step, the average particle diameter of the spacer particles contained in the adhesive for electronic parts of the present invention is formed to be the thickness of the adhesive layer. 70% of the adhesive layer. The method for laminating a semiconductor wafer of the present invention has (7) a hardening step of hardening the interface between the semiconductor wafer and the other semiconductor wafer or the supporting member. , there is no special restriction, can cooperate with this 30 200908166

發明之電子零件用i $為丨& A 接錢所含之硬化性化合物適當予以選 :’该硬化性化合物，在含有該環氧樹腊時，可舉 將该接著劑層加熱之方法。 藉由此種本發明之半導體晶片之積層方法，可將2個 以上之半導體晶片加以積層 w增成爹層，並藉由密封劑等加以 密封以製作半導體裝置。 a寻加以 此種藉由本發明之半導體晶片之積層方法製作而成之 半V體裝置，亦為本發明之一。 *根據本發明，可提供—種能將一電子零件與其他電子 备件或支持構件以平行且正確之間隙間距離加以接合 子零件用接著劑。又，亦可提^一 — 狄识種使用該電子零件用接 者劑之半導體晶片之積層方法、以及半導體裝置。 【實施方式】 以下，雖揭*實施例以進—步詳細說明本發明，但本 發明並非僅限於此等實施例。 (貫施例1〜8、比較例1〜1 〇) U)電子零件用接著劑之調製 依照表1及表2之組成，將下述所示之間隔粒子以外 之各材料，使用行星式攪拌機加以攪拌混合，以製作接著 =成物。依照纟1及表2之組成’將間隔粒子摻合於所製 :之接著組成物，並進-步使用行星式授拌機加以㈣混 合，藉此調製實施例1〜8及比較例丨〜丨〇之電子零件用 =著劑。此外，表i及表2中各組成物之摻合量係表示重 31 200908166 (硬化性化合物） 倍環戍二烯型環氧樹脂（「HP-7200HH」、Dainippon Ink and Chemicals 公司製） 奈型環氧樹脂（「HP-4032D」、Dainippon Ink and Chemicals公司製、在常溫下為液狀） 間苯二紛型環氧樹脂（「EX201」、NAGASE CHEMTEX 公司製、在常溫下為液狀） 低黏度環氧樹脂（「EP-4〇88S」、旭電化公司製、黏度 為 250mPa . s/ 25。。） (硬化物） 酸酐（「YH-307」、Japan Epoxy Resins 公司製） (間隔粒子） 樹脂粒子 1(「Micropearl SP-210」、積水化學工業公 司製、平均粒徑=10 μ m、CV值=4%) 樹脂粒子2(「Micropearl SP-207」、積水化學工業公 司製、平均粒徑=7 # m、CV值=4%) 樹脂粒子3(「Micropearl SP-205」、積水化學工業公 司製、平均粒徑=5 # m、CV值=4%) 樹脂粒子4(「Micropearl SP-203」、積水化學工業公 司製、平均粒徑=3 // m、CV值=4%) 樹脂粒子5(「Micropearl SP-204」、積水化學工業公 司製、平均粒徑=4.5 # m、CV值=4%) 樹脂粒子6(「Micropearl SP-206」、積水化學工業公 司製、平均粒徑=6 # m、CV值=4%) 32 200908166 樹脂粒子7(「Micropearl SP-204」、積水化學工業公 司製、平均粒徑=3_8 # m、CV值=4。/。） 樹脂粒子8(「Micropearl SP-208」、積水化學工業公 司製、平均粒徑=8 // m、CV值=4%) 球狀氧化矽1(「HS301」、Micron公司製、平均粒徑 二 2.4# m、cv 值〉1〇%) 球狀氧化矽2(「HS3〇2」、Micron公司製、平均粒徑 = 、cv 值〉1〇%) (硬化促進劑） 咪唾化合物（「2MA-OK」、四國化成工業公司製） (搖變劑） 燻石夕土（「AEROSIL R202S」、曰本AEROSIL公司製） (含環氧基之高分子化合物） 含環氧基之丙烯酸樹脂（「BLEMMER CP-30」、Japan Epoxy Resins 公司製） (橡膠改質環氧樹脂） CTBN改質環氧樹脂（「EPR-4023」、旭化成工業公司 製） (2)半導體晶片積層體之製作 將所製得之電子零件用接著劑填充於丨〇mL之注射器 (岩下Engineering公司製），將精密管嘴（岩下Engineering 公司製、管嘴前端直徑〇.3mm)安裝於注射器前端，使用分 庄凌置（「SHOT MASTER 300」、武藏 Engineering 公司製）， 以吐出壓為0.4MPa、半導體晶片與針之間隙為2〇〇"m、 33 200908166 塗布量為5mg塗布於基板上。 進行塗布之後，藉由使用黏晶機（「Bestemd〇2」、 caN〇Nmachinery公司製），以抑及表2所記 載之時間進行按壓，積層矽晶片（厚度為8—、i〇mmx l〇mm見方）。此時，使目標之間隙間距離為丨〇gm。之後， 以150°C進行60分鐘加熱，使電子零件用接著劑硬化，藉 此製得半導體晶片積層體。 (評價） 針對實施例及比較例所調製之電子零件用接著劑、及 所製作之半導體晶片積層體，藉由以下方法進行評價。將 結果表不於表1及表2。 (黏度測量） 針對實施例及比較例所調製之電子零件用接著劑，使 用E型黏度測量裝置（產品名r VISCOMETER Tm _)，TOKI SANGYO CO_ LTD公司製、使用轉子為0 15mm、設定溫 度為25 C ) ’測量轉速為〇.5rpm、1 rpm、及1 〇rpm之黏度。 此外，針對實施例及比較例所調製之電子零件用接著劑， 以使用E型黏度測量裝置在25 °C、1 rpm之條件所測量之 黏度為T1 ’以使用E型黏度測量裝置在25°C、1〇 rpm之 條件所測量之黏度為T2，算出τ 1 / T2之值。 (2)間隙間距離之測量 在製作半導體晶片積層體時，使用雷射位移外 (「LT9010M」、「KS-1100」、KEyeNCE 公司製），剛量 積層半導體晶片時之間隙間距離，以算出間隔粒子之平土勺 34 200908166 粒徑相對於間隙間距離的比例。 斤冽ΐ之樣品數為各25個，以晶片中心、及晶片 :2個部位的平均值為間隙間距離。X，以晶片中心 晶片周邊之間隙間距離的差為傾斜。 (3 )半導體晶片積層體之許價 +針對所製作之半導體晶片積層體，在間隙間距離為 ~3以m、傾斜在土 3 以下時 μ 汗價為「〇」，在間隙ρ ’、' 〇±5 # m、傾斜在±5 // m以下時評價為「△」， 隙間距離為l〇±5/z m、傾斜在±5以m以上時評價為^ 在間隙間距離為15 # m<時評價為「XX」。 邊 及 10 距 間 35 200908166 〆 8"炎躲 I iN-i# 9莩絮駟 1 •H#"鉍 "茗啜鉍 2士>"釦 °l 0- 0^ 8 s s 2 0" g s s 0卜The electronic component of the invention is suitably selected from the sclerosing compound contained in 接& A. The sclerosing compound may be a method of heating the adhesive layer when the epoxy resin is contained. According to the method for laminating a semiconductor wafer of the present invention, two or more semiconductor wafers can be laminated to form a germanium layer, and sealed by a sealant or the like to form a semiconductor device. A semi-V body device fabricated by the lamination method of the semiconductor wafer of the present invention is also one of the inventions. * According to the present invention, it is possible to provide an adhesive for a sub-assembly by interposing an electronic component with other electronic spare parts or supporting members at parallel and correct gap distances. Further, it is also possible to provide a method of laminating a semiconductor wafer using the connector for an electronic component and a semiconductor device. [Embodiment] Hereinafter, the present invention will be described in detail with reference to the embodiments, but the present invention is not limited to the examples. (Examples 1 to 8 and Comparative Examples 1 to 1) U) Preparation of an adhesive for electronic parts According to the composition of Tables 1 and 2, a planetary mixer was used for each material other than the spacer particles shown below. Stir and mix to make a subsequent product. According to the composition of 纟1 and Table 2, the spacer particles were blended into the following composition: and the mixture was further mixed by using a planetary mixer (4), thereby modulating Examples 1 to 8 and Comparative Example 丨~丨〇 电子 electronic parts use = agent. In addition, the blending amount of each of the components in Tables i and 2 indicates that the weight is 31 200908166 (curable compound), a cyclohexadiene type epoxy resin ("HP-7200HH", manufactured by Dainippon Ink and Chemicals Co., Ltd.) Epoxy resin ("HP-4032D", manufactured by Dainippon Ink and Chemicals, liquid at room temperature), isophthalic epoxy resin ("EX201", manufactured by NAGASE CHEMTEX, liquid at room temperature) Viscosity Epoxy Resin ("EP-4〇88S", manufactured by Asahi Kasei Co., Ltd., viscosity: 250mPa. s/25.) (Cured product) Anhydride ("YH-307", manufactured by Japan Epoxy Resins Co., Ltd.) (spaced particles) Resin particle 1 ("Micropearl SP-210", manufactured by Sekisui Chemical Co., Ltd., average particle diameter = 10 μm, CV value = 4%) Resin particle 2 ("Micropearl SP-207", manufactured by Sekisui Chemical Co., Ltd., average particle) Resin particle 3 ("Micropearl SP-205", manufactured by Sekisui Chemical Co., Ltd., average particle diameter = 5 # m, CV value = 4%) Resin particle 4 ("Micropearl SP" -203", manufactured by Sekisui Chemical Co., Ltd., average particle diameter = 3 // m, CV value = 4%) Resin particles 5 ( Micropearl SP-204", manufactured by Sekisui Chemical Co., Ltd., average particle size = 4.5 # m, CV value = 4%) Resin particles 6 ("Micropearl SP-206", manufactured by Sekisui Chemical Co., Ltd., average particle size = 6 # m CV value = 4%) 32 200908166 Resin particle 7 ("Micropearl SP-204", manufactured by Sekisui Chemical Co., Ltd., average particle diameter = 3_8 # m, CV value = 4%). Resin particle 8 ("Micropearl SP- 208", manufactured by Sekisui Chemical Co., Ltd., average particle size = 8 // m, CV value = 4%) Spherical yttrium oxide 1 ("HS301", manufactured by Micron Corporation, average particle size 2.4# m, cv value> 1 〇%) Spherical yttrium oxide 2 ("HS3〇2", manufactured by Micron, average particle size = , cv value > 1〇%) (hardening accelerator) Sodium salinated compound ("2MA-OK", Shikoku Chemical Industry Co., Ltd. Company system) (shake agent) Essence stone ("AEROSIL R202S", manufactured by AEROSIL Co., Ltd.) (polymer compound containing epoxy group) Acrylic resin containing epoxy group ("BLEMMER CP-30", Japan Epoxy Resins Co., Ltd. (Rubber modified epoxy resin) CTBN modified epoxy resin ("EPR-4023", manufactured by Asahi Kasei Industrial Co., Ltd.) (2) Semiconductor wafer In the production of the layered body, the obtained electronic parts were filled in a syringe of 丨〇mL (manufactured by Iwate Engineering Co., Ltd.), and a precision nozzle (manufactured by Iwate Engineering Co., Ltd., nozzle tip diameter: 33 mm) was attached to the front end of the syringe. The use of Seiko Tsang ("SHOT MASTER 300", manufactured by Musashi Engineering Co., Ltd.) has a discharge pressure of 0.4 MPa and a gap between the semiconductor wafer and the needle of 2 〇〇"m, 33 200908166, and a coating amount of 5 mg is applied to the substrate. . After coating, the film was laminated by using a die bonder ("Bestemd 2", caN〇 N Machinery Co., Ltd.) to suppress the time shown in Table 2, and the thickness of the wafer was 8 -, i〇mmx l〇 Mm see square). At this time, the distance between the gaps of the target is made 丨〇gm. Thereafter, the film was heated at 150 ° C for 60 minutes to cure the electronic component with an adhesive, whereby a semiconductor wafer laminate was obtained. (Evaluation) The adhesive for electronic parts prepared in the examples and the comparative examples and the produced semiconductor wafer laminate were evaluated by the following methods. The results are not shown in Tables 1 and 2. (Viscosity measurement) For the adhesive for electronic parts prepared in the examples and the comparative examples, an E-type viscosity measuring device (product name r VISCOMETER Tm _) was used, and a rotor made of TOKI SANGYO CO_ LTD was used, and the rotor was 0 15 mm, and the set temperature was 25 C ) 'Measure the rotational speed at 〇.5 rpm, 1 rpm, and 1 rpm. Further, the adhesive for electronic parts prepared by the examples and the comparative examples was measured to have a viscosity T1 ' at 25 ° C and 1 rpm using an E-type viscosity measuring device to use an E-type viscosity measuring device at 25°. The viscosity measured under the conditions of C and 1 rpm is T2, and the value of τ 1 / T2 is calculated. (2) Measurement of the distance between the gaps When the semiconductor wafer laminate is produced, the distance between the gaps in the case of stacking the semiconductor wafer is calculated using a laser displacement ("LT9010M", "KS-1100", or KEyeNCE)). The spacer of the spacer particles 34 200908166 The ratio of the particle size to the distance between the gaps. The number of samples of the pounds is 25, and the average value of the two parts of the wafer center and the wafer is the gap between the gaps. X is inclined by the difference in the distance between the gaps around the wafer center wafer. (3) Price of the semiconductor wafer laminate + For the fabricated semiconductor wafer laminate, the μ sweat price is "〇" when the distance between the gaps is ~3 m and the slope is below the soil 3, and the gap ρ ', ' 〇±5 # m, when the inclination is ±5 // m or less, the evaluation is “△”, the gap distance is l〇±5/zm, and the inclination is ±5 or more, the evaluation is ^. The distance between the gaps is 15 # m&lt The time is evaluated as "XX". Side and 10 distance 35 200908166 〆8"Inflammation hide I iN-i# 9莩絮驷1 •H#"铋"茗啜铋2士>"" buckle°l 0- 0^ 8 ss 2 0&quot ; gss 0 Bu

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屮4SIS {s.efetucuw.o ^•ecoujdj^ ?«SE&0^ 奴一\ll 1?礤 (日70#SE^菝w類ir祭忒螬黎*#斗 d3ss^939 〇0¥玉«樣齒菸铯S轵勃藉屮趄奖迗 傘 ¥ PI C- * ^ Φ φ 你二 筚| It 36 200908166 zs •»9 τ 嚭 i* ο g s S CO <〇 〇 1 1 1 1 1 ί 1 1 1 ο « Μ 09 5 2 u» S < Oi w 餐 4J s ΙΛ 另 φ S m <〇 〇 J 1 1 Ϊ 1 i *· 1 t ϊ s η es| Cs| IT·» & g Pi S Λ S 4 CO 43 沄 Ο 1 $ CO V» •*«r 〇 1 1 1 i ί 1 »· 1 1 1 ο «0 jn Ψ» ? Ρ» s 寸 S < Μ g «〇 Λ C9 背 〇 1 1 1 1 1 1 t Τ» ιβ ο w Sj α S A 〇i § < to $ Μ il s R O 1 5 eo to 寸 〇 I 1 I 1 1 1 1 - i 1 ο Γ9 JA 9 09 t4 3 寸 2 < ΙΓ> : *v* ,〇 餐 Μ s 1 1 2 03 CD 寸 〇 1 - 1 1 i 1 1 i 1 ο ο 〇 s >» δ A s V- m g < o g s S 〇 G〇 <0 寸 〇 τ~ 1 ] 1 1 1 1 1 1 t τ- ο ο CO eo a «Ο n o Ο S X X CO 革 ά 〇 S s S 〇 GO 〇 t r 1 1 I 1 1 1 1 ο «·> ea n αο 5 1 Γ*» X 簕 O S 沄 S g CO <〇 〇 1 1 1 Τ» 1 t 1 1 1 1 ο »" to e〇 e>s c〇 § CM § <J 革 'iJ o S s S 〇 〇> <P 对 〇 1 1 t 1 i f 1 t f ο to βα n 0Λ 3 s 令 8 "1^ <1 鸽 1 翁 Μ 牵 n m 濰 iJn «? m 翕 ί4 m «# | # φ 与 蚩 遝 Μ 铋 裝 W Φ 璇 Μ 1 Q 5 » Έτ 〇 勢 4 5Γ w Ψ-4 接 g , m »· 4 赏 4- Μ Μ 自 每 ? 兹 4 CO 輿 璉 寸 ¥ 匕 • m 奥 镇 4- 寸 Hr 4 鍥 i r BB 贫 ΙΟ • » 驊 Η' 4 裝 /-s 域 B m CO i 4 赏 4- <〇 屮 4 m M 寸 δ t CO CO 4 5Γ 锋· ί 4 璉 Q Β f m 51 eo 躑 4 〇〇 屮 4 獎 |球狀氧化矽1(平均粒徑：2.4/iro、CV值>】顶） Q b m ed 接 ci % aJ ο \ ζ φ 濰 套 啻 雄 Φ t i ir> d « (0 α Ί α ψ» ? « & *ε Β ο 泛 \ Γ Η y. i n 迗 銨 赛 =e Φ 斗 5. t 婪 w 類 箔 SC <°s 類 /-S ¥ 錄 η 铯 袈 ! 凝 «? m $ 饀 W Ϊ 萑 •tar* 碁 + «? 妳 槳 Μ U 餘 狯 φ 5 jj ί if m £? 1 雄 御 Μ 41 ( 細t ㈣ % ) 37 200908166 很骒本發明 ^, 钕供—種能將一電子零件盥苴他 令件、或-電子零件與支持構件以平杆曰…、他電子 離加以接合之電子零件用接著劑。又仃^確之間㈣距 3玄電子零件用接著劑之半導體晶片之積爲、可提卩種使用 體裂置。 積層方法、以及半導 【圖式簡單說明】 無 【主要元件符號說明】 無 38屮4SIS {s.efetucuw.o ^•ecoujdj^ ?«SE&0^ slave one\ll 1?礤(日70#SE^菝w class ir sacrifice 忒螬li*#斗d3ss^939 〇0¥玉«齿 轵 轵 轵 PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI PI 1 1 1 ο « Μ 09 5 2 u» S < Oi w Meal 4J s ΙΛ Another φ S m <〇〇J 1 1 Ϊ 1 i *· 1 t ϊ s η es| Cs| IT·» & g Pi S Λ S 4 CO 43 沄Ο 1 $ CO V» •*«r 〇1 1 1 i ί 1 »· 1 1 1 ο «0 jn Ψ» ? Ρ» s inch S < Μ g «〇Λ C9 Back 〇 1 1 1 1 1 1 t Τ» ιβ ο w Sj α SA 〇i § < to $ Μ il s RO 1 5 eo to inch 〇 I 1 I 1 1 1 1 - i 1 ο Γ9 JA 9 09 T4 3 inch 2 <ΙΓ> : *v* , 〇 meal Μ 1 1 2 03 CD inch 〇 1 - 1 1 i 1 1 i 1 ο ο 〇s >» δ A s V- mg < ogs S 〇G〇<0 inch 〇τ~ 1 ] 1 1 1 1 1 1 t τ- ο ο CO eo a «Ο no Ο SXX CO ά 〇 S s S 〇GO 〇tr 1 1 I 1 1 1 1 ο «·> ea n αο 5 1 Γ*» X 簕OS 沄S g CO <〇〇 1 1 1 Τ» 1 t 1 1 1 1 ο »" to e〇e>sc〇§ CM § <J leather 'iJ o S s S 〇〇><P vs. 1 1 t 1 if 1 tf ο to βα n 0Λ 3 s 令 8 "1^ <1 pigeon 1 翁Μ 牵 nm 潍iJn «? m 翕ί4 m «# | # φ 和蚩遝Μ Armored W Φ 璇Μ 1 Q 5 » Έτ 〇势4 5Γ w Ψ-4 接 g , m »· 4 reward 4- Μ Μ From every 4 舆琏 4 舆琏 匕 m m m town 4-inch Hr 4 锲ir BB barren • » 骅Η' 4 loaded /-s domain B m CO i 4 reward 4- < 〇屮 4 m M inch δ t CO CO 4 5 Γ front · ί 4 琏 Q Β fm 51 eo 踯 4 〇〇屮 4 award | spherical bismuth oxide 1 (average particle diameter: 2.4/iro, CV value > top) Q bm ed ci % aJ ο \ ζ φ 潍 啻 Φ Φ ti ir> d « (0 α Ί α ψ» ? « & * ε Β ο 泛 Γ y y. in 迗 赛 = =e Φ 斗 5. t 婪w foil SC <°s class /-S ¥ 录 铯袈 ! condensing «? m $ 饀W Ϊ 萑•tar * 碁+ «? 妳 paddle Μ U 狯 φ 5 jj ί if m £? 1 雄御Μ 41 ( 细 t (四) % ) 37 20090 8166 It is very useful for the present invention to provide an electronic component adhesive for an electronic component, or an electronic component and a supporting member, which is a flat rod.仃^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Lamination method, and semi-conductor [Simple description of the diagram] None [Main component symbol description] None 38

Claims (1)

200908166 十、申請專利範園： 電子文件二電子零件用接著劑’肖以將-電子零件與其他 電子零件或電子零件與支持構件，以心m以下之間 距離加以平行積層，其特徵在於： 係含有硬化性化合物、硬化劑及間隔粒 用接著劑； < 1：子令件 在接合該-電子零件與其他電子零件或電子零件 溫度下，使用£型黏度計"1Grpm所測得的黏 度為50Pa.s以下； 該間隔粒子，1 CV值為10%以下，其平均粒徑為兮 -電子零件與其他電子零件或電子零件與支持構件之間隙 間距離的4 0〜7 0 %。 2、如申請專利範圍帛Μ之電子零件用接著劑，其中 電子零件係半導體晶片。 、200908166 X. Application for Patent Park: The electronic document two electronic parts use adhesive 'Xiao Yi-Electronic parts and other electronic parts or electronic parts and supporting members, parallel to the distance between the heart m, which is characterized by: Contains a curable compound, a hardener, and an adhesive for spacer particles; < 1: The viscosity of the sub-component measured at a temperature of the electronic component and other electronic parts or electronic parts using a £-type viscometer "1Grpm The particle size is 50 Pa.s or less; the spacer particle has a C C value of 10% or less, and the average particle diameter thereof is 40 to 70% of the distance between the electronic component and the gap between the other electronic component or the electronic component and the supporting member. 2. An adhesive for electronic parts such as the patent application scope, wherein the electronic component is a semiconductor wafer. , 其 該 3、-種半導體晶月之積層方法’係使用申請專利範圍 1或2項之電子零件用接著劑，將—半導體晶片積層於 他半導體晶片或支持構件，其特徵在於，具有： 塗布步驟（1)，係於該其他半導體晶片或支持構件塗布 電子零件用接著劑，以形成接著劑層； 半導體晶片積層步驟（2) ’係透過該接著劑層積 半導體晶片；及 硬化步驟（3)，係使該—半導體晶片與該其他半導體晶 片或支持構件間之接著劑層硬化。 4、一種半導體裝置，其特徵在於： 39 200908166 之積層方法 係藉由申請專利範圍第3項之半導體晶 製造而成。 十一、圖式： 無 40The method for laminating the semiconductor semiconductor crystals is to laminate the semiconductor wafer to another semiconductor wafer or supporting member using the adhesive for electronic parts of claim 1 or 2, characterized in that it has: a coating step (1) applying an adhesive for an electronic component to the other semiconductor wafer or supporting member to form an adhesive layer; a semiconductor wafer lamination step (2) 'layering the semiconductor wafer through the adhesive; and hardening step (3) The adhesive layer between the semiconductor wafer and the other semiconductor wafer or support member is cured. A semiconductor device characterized in that: 39. The layering method of 200908166 is manufactured by the semiconductor crystal of claim 3 of the patent application. XI. Schema: None 40
TW097128044A 2007-07-25 2008-07-24 An adhesive for an electronic component, a lamination method for a semiconductor wafer, and a semiconductor device TWI411049B (en)

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JP5680330B2 (en) * 2010-04-23 2015-03-04 株式会社東芝 Manufacturing method of semiconductor device
JP5676954B2 (en) * 2010-07-27 2015-02-25 京セラ株式会社 Thermal head and thermal printer equipped with the same
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TWI464229B (en) * 2011-03-09 2014-12-11 Sekisui Chemical Co Ltd And an electronic component bonding agent and a method for manufacturing the semiconductor wafer structure
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