200847470 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種圖案化基板的製造方法，特別是 指一種可製得具有折射體的基板之圖案化基板的製造方法 【先前技術】 參閱圖1，目前的發光二極體是在一塊基板1的上表面 形成一層在獲得電能時以光電效應的方式產生光的磊晶膜 100 ° 但疋’由於該基板1的上表面並未經加工處理，因此 是極為平坦的，故而導致部分射向該基板1的光，因全反 射效應而侷限於該發光二極體内無法射出，不僅浪費了所 產生的光，而降低光取出效率及整體發光亮度，同時，又 將在該發光二極體内形成内廢熱，而降低元件實際工作壽 命。 荼閱圖2 ’於是有文獻提出湘離子轟擊的方式粗化該 基板1的上表面，進而再利用此經粗化後的基板丨形成發 光-極體’雖然以此法製得的基才反i確實可破壞朝向該基 板1方向行進的光之全反射效應，而減少内廢熱的產生， ，，，卻未能再利用此等朝向該基板丨方向行進的光，依 舊無法有效提升元件的光取出效率及整體發光亮度。 因此，研究改善目前的基板結構之方法，以期在將該 隸用於形成發光二極體甚至是任何固態發光元件時，可 提升元件的光取出效率及整體發光亮度，並延長元件實際 5 200847470 工作壽命，實為目前產學界努力的目標。 【發明内容】 $ 、、本^明之目的’即在提供-種圖案化基板的製 仏法’以提高入射至基板的光反射的機率，並可進一步 將1匕基板應用於形成高光取出率及高發光亮度的固態發光 70件。 於是，本發明圖案化基板的製造方法是包含下述步驟 〇 f先，在一基材上形成一層材料膜。 2後’第—次軟烤該材㈣，使該㈣ 基 始、粘合。 接著，在一預定圖案下曝光該材料膜。 之η 帛人H彡材料膜’增強該材料膜與該基材 之間的鍵結強度。 圏*ΐ著，顯影該材料膜，使該材料膜形成複數相間隔的 二且該每—圖案塊相對該基材頂面的厚度是0.4^ .…與該基材頂面相連結之區域的徑長是 爪〜5 # m 〇 卜 开％:後：共烤該每一圖案塊，使該每一圖案塊經由熱整 /過私，引發形狀轉換。 的方進订非等向性敍刻’沿該任一圖案塊往該基材 括^除該複數圖案塊及該基材的部分區域，而形成包 =的本體’及複數相間隔地形成於該本體頂面的折 土板’该每一折射體具有一曲面，且相對該本體頂 200847470 面的厚度是〇.3/zm〜4/zm，與該本體頂面相連結之區域的 徑長是1 // m〜4/z m，且厚度徑長比是〇.3〜4。 本發明的功效在於該材料膜之材料的選用，及搭配適 當的第一、二次軟烤的溫度及烘烤溫度，而製得具有呈預 疋悲樣之折射體的基板’以提南入射至該基板的光反射的 機率，並可進一步將此基板應用於形成高光取出率及高發 光亮度的固態發光元件。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 參閱圖3,本發明圖案化基板的製造方法之第一較佳實 施例是用於形成如圖4與圖8所示具有呈半橢球形之折射 體62的基板6，以大幅提升人射至基板6的光反射的機率 ，亚可進一步將製得的基板6應用於形成固態發光元件， 而大幅提升固態發光元件的光取出效率及整體發光亮度。 該第一較佳實施例包含下述步驟。 參閱圖3與圖5,首先，進行步驟4卜在—基材· 上形成一層材料膜300，且該材料臈3〇〇的材料是系列 光阻。 μ 然後，進行步驟42，在攝氏溫度9〇度下第—次軟烤該 材料膜300，使該材料膜3〇〇與該基材2〇〇緊密粘合。以 200847470 接著 進行步驟 300。 43 ’在一預定圖案下曝光該材料膜 二次軟烤 之間的鍵 之後，進仃步驟44，在攝氏溫度120度下第 吞亥材料膜3 0 0，以辦絲兮从把峨 增強忒材枓膜300與該基材2〇〇 結強度。 >閱圖3與圖6 ’接著，進行步驟45，顯影該材料膜 3〇〇使騎料膜3〇〇形成複數相間隔的圖案塊卿，，且 該每一圖案塊脚是呈柱狀，且相對該基材頂面的厚 度約為2.2//m，與該基材2〇〇頂面相連結之區域的握長約 溻圖3 圖7 ’然後，進行步驟46，在攝氏溫度工 度下烘烤該每-K案塊則，約半小時，使該每—圖案塊 3〇〇’經由熱整形過程，引發形狀轉換。 多閱圖3與圖8,最後，進行步驟47，進行非等向性 蝕刻，沿該任一圖案塊3〇〇，往該基材2〇〇的方向移除該複 數圖案塊3GG，及該基材的部分區域，而形成包括一板 狀的本體61 ’及複數相間隔地形成於該本體61頂面的折射 體62之基板6，該每一折射體62是呈半圓球形，並具有— 曲面621，且相對該本體61頂面的厚度h是，與該 本體61頂面相連結之區域的徑長R是，且厚度匕徑 長R比是0.5。 該第一較佳實施例藉由適當地選擇該材料膜3〇〇的材 料，並搭配適當的[、二次軟烤的溫度及烘烤的溫度而 製得具有呈半橢球形之折射體62的基板6,以大幅提高入 200847470 射至該基板6的光反射的機會。 參閱圖9 ’再者，利用該第一較佳實施例製得的基板6 於形成一發光二極體時，是在該基板6包括該複數折射體 62的一侧上形成一在獲得電能時以光電效應的方式產生光 的磊晶膜100，由於部分射向該基板6的光可被該複數折射 體62反射，而朝反向於該基板6的方向向上正向射出，因 此應用该第一較佳實施例製得的基板6所形成的發光二極 體’將由於該基板6具有該複數呈半圓球形的折射體62， -f 因此大置增加射向該基板6的光反射以射出該發光二極體 - 的機會，而大幅提昇該發光二極體的光取出效率及整體發 光亮度（參閱圖10與圖u，應用該第一較佳實施例製得之 基板6所形成的發光二極體之發光亮度較目前的發光二極 體的發光亮度提升了約60% );同時，降低侷限於該發光二 極體内反覆發生全反射的光量，而降低内廢熱的產生，以 延長元件的實際工作壽命。 參閱圖12與圖13，此外，由於該具有呈半圓球形之折 ( 射體62的基板6與該磊晶膜1〇〇之間的界面效應，使得應 用遠第一較佳實施例製得的基板6所形成的發光二極體之 工作電壓較目前的發光二極體的工作電壓下降了約〇 2〜 0.4%。 參閱圖14,本發明圖案化基板的製造方法之第二較佳 實施例是用於形成如圖19所示具有呈凸頂圓柱形之折射體 62的基板6，以大幅提升入射至基板6的光反射的機率， 並可進一步將製得的基板6應用於形成固態發光元件，而 9 200847470 大幅提升固態發光元件的光取出效率及整體發光亮度。 該第二較佳實施例包含下述步驟。 參閱圖μ與圖15，首先，進行步驟51，在一基材綱 上形成-層材料膜_，其中，該基材·包括一基底層 201，，及-形成於基底層201 ±且厚度為議A〜麵〇 A 的緩衝層202，且該緩衝層2G2的材料可以是紹、錄、絡、 鉑至冑，或上述任兩種以上元素形成的合金該材料 膜300的材料是選自於EpG系列光阻。 然後，進行步驟52，在攝氏溫度9(rc〜11〇χ：τ第一次 权烤謂料膜_，使該材⑽_與該緩衝層搬緊密姑 合0 300 接著，進行步驟53，在一 定圖案下曝光該材料膜 之後，進行步驟54，在攝氏溫度9〇〇c〜U(rc下第二次 权烤4材料膜3GG ’以增強該材料膜3⑼與該緩衝層2〇2之 間的鍵結強度。 芩閱圖14與圖16，接著，進行步驟55，顯影該材料 膜300使该材料膜3〇〇形成複數相間隔的圖案塊刪，， 且=每-圖案i鬼300,是呈柱狀，並相對該緩衝層撤頂面 的厚度疋1 ·2 // m，與該緩衝層2〇2頂面相連結之區域的徑 長是 3·5 // m。 ί 1 Θ 14與圖η ’然後，進行步驟％，在攝氏溫度 120 C〜150 c下烘烤該每一圖案塊3〇〇，一預定時間，使 ,亥母-圖案塊_，經由熱整形過程，引發形狀轉換。 10 200847470 苓閱圖14與圖18，接著，進行步驟57，進行非等向 性蝕刻，移除該緩衝層202未被該複數圖案塊3〇〇，覆蓋的 區域。 參閱圖14與圖19，最後，進行步驟58，進行非等向 性蝕刻，沿該任一圖案塊300,往該基材2〇〇的方向，移除 該複數圖案塊300,、該緩衝層202及該基底層2〇1的部分 區域，而形成包括一板狀的本體61，及該複數相間隔地形 成於該本體61頂面的折射體62之基板6，該每一折射體 62是呈凸頂圓柱形，並具有一自該本體61頂面向上延伸的 圍繞面622,及一自該圍繞面622頂緣向上並向内延伸且呈 拋物面態樣的曲面621，且該每一折射體62相對該本體Μ 頂面的厚度h是0.3/zm〜4//m，與該本體61頂面相連結 之區域的徑長尺是1//111〜4//111，且厚度11徑長尺比是〇3 /-«^4 〇 該第二較佳實施例提供製成另一種態樣的基板6之圖 案化基板的製造方法。 而除了上述該第一、二較佳實施例外，只需再稍加變 換該材料膜300的材料，並配合適當的第一、二次軟烤的 溫度及供烤溫度，可製得具有呈各式態樣之折射體的基 板6,例如圖20、圖21、圖22所示分別具有呈半圓球形、 半橢球形及雙峰形的折射體62之基板6;或如圖23、圖24 所示的基板6’其中，該每_折射體62具有—自該本體61 頂面向下延伸的曲面62卜及_自該曲面621底緣向内延伸 且與該本體61頂面平行的底面⑵；又有如圖25所示的基 11 200847470 板’其中，該每一折射體62具有一自該本體6"頁面向下 延伸的曲爭621 ’及-自該曲面621底緣向内延伸並呈弧形 的底面623;另外還有如圖％所示的基板6,其中該基板6 更包括複數分別形成於該本體61頂面並具有一副曲面631 的副折射體63，該每-副折射體63是介於任二相鄰的折射 體/2之間，該每一副折射體63相對該本體61頂面的厚度 疋0.3# m〜4# m，與該本體61頂面相連結之區域的徑長 R’是’且厚度h’徑長r，比是〇 15〜8。 Γ 纟於本發明的製造方法可製得的基板6之態樣種類繁 多，僅需選用合宜的該材料膜3〇〇的材料，並配合調整第 --人权烤Α度及烘烤溫度，即可製得具有呈各式態樣 之折射體62的基板6,因此本文中將不再多加敛述。 综上所述，本發明圖案化基板的製造方法藉由適當選 擇该材料膜300的材料，並配合調整第一、二次軟烤的溫 度及烘烤的溫度，即可製得具有呈預定態樣之折射體Μ的 基板6’以大巾田提局人射至該基板6的光反射的機率並可 進，步將該基板6應用於製作出高光取出率及高發光亮度 的固態發光元件，確實達到本發明之目的。 又 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 乾圍及發明說明内容所作之簡單的等效變化與修飾皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1疋一示思圖，說明目前的一種發光二極體； 12 200847470 圖2是一示意圖，說明目前的另一種發光二極體； 圖3是一流程圖，說明本發明圖案化基板的製造方法 之一第一較佳實施例； 圖4是一掃描電子顯微鏡影像圖，說明圖3的製造方 法製得的基板； 圖5是一示意圖，說明圖3的步驟41 ; 圖6是一示意圖，說明圖3的步驟45; 圖7是一示意圖，說明圖3的步驟46 ; Γ 圖8是一示意圖’說明圖3的步驟47 ; 圖9是一示意圖，說明圖3的製造方法製得的基板應 用於形成一發光二極體； 圖10是一函數圖’比較圖9的發光二極體與目前的發 光二極體之發光亮度； 圖11是另一函數圖’比較圖9的發光二極體與目前的 發光二極體之發光亮度； 圖12是一函數圖，比較圖9的發光二極體與目前的發 v 光二極體之工作電壓； 圖是另一函數圖，比較圖9的發光二極體與目前的 發光二極體之工作電壓； 圖14是一示意圖，說明本發明圖案化基板的製造方法 之一弟二較佳實施例； 圖15是一示意圖，說明圖14的步驟51 ; 圖16是一示意圖，說明圖14的步驟55 ; 圖i?是一示意圖，說明圖14的步驟56 ; 13 200847470 圖18是一示意圖，說明圖14的步驟57 ; 圖19是一示意圖，說明圖14的步驟58 ; 圖20是一示意圖，說明本發明的製造方法製得的基板 之態樣， 圖21是一示意圖，說明本發明的製造方法製得的基板 之悲樣， 圖22是一示意圖，說明本發明的製造方法製得的基板 之態樣； j 圖23是一示意圖，說明本發明的製造方法製得的基板 * 之態樣； 圖24是一示意圖，說明本發明的製造方法製得的基板 之悲樣， 圖25是一示意圖，說明本發明的製造方法製得的基板 之態樣；及 圖26是一示意圖，說明本發明的製造方法製得的基板 之態樣。 14 200847470 % / \ 【主要元件符號說明】 100 蠢晶膜 51 在一基材上形成 200 基材 一層材料膜 201 基底層 52 第一次軟烤該材 202 緩衝層 料膜 300 材料膜 53 曝光該材料膜 3005 圖案塊 54 第二次軟烤該材 41 在一基材上形成 料膜 一層材料膜 55 顯影該材料膜， 42 第一次軟烤該材 使該材料膜形成 料膜 複數圖案塊 43 曝光該材料膜 56 烘烤該每一圖案 44 第二次軟烤該材 塊 料膜 57 移除該緩衝層未 45 顯影該材料膜， 被該複數圖案塊 使該材料膜形成 覆蓋的區域 複數圖案塊 58 沿該任一圖案塊 46 烘烤該每一圖案 往該基材的方向 塊 ，移除該複數圖 47 沿該任一圖案塊 案塊、該緩衝層 往該基材的方向 及該基底層的部 移除該複數圖案 分區域 塊及該^材的部 6 基板 分區域 61 本體 15 200847470 62 折射體 631 副曲面 621 曲面 h 厚度 622 圍繞面 R 徑長 623 底面 h， 厚度 63 副折射體 R， 徑長 16200847470 IX. Description of the Invention: [Technical Field] The present invention relates to a method for fabricating a patterned substrate, and more particularly to a method for manufacturing a patterned substrate on which a substrate having a refractive body can be produced. [Prior Art] In the present invention, the current light-emitting diode is formed on the upper surface of a substrate 1 by an epitaxial film 100° which generates light by photoelectric effect when electric energy is obtained, but the upper surface of the substrate 1 is not processed. The treatment is extremely flat, so that a part of the light that is incident on the substrate 1 is limited to the light-emitting diode due to the total reflection effect, and the generated light is not only wasted, but the light extraction efficiency and overall efficiency are reduced. The brightness of the light, at the same time, will form internal waste heat in the light-emitting diode, thereby reducing the actual working life of the component.荼 图 图 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘 湘It is indeed possible to destroy the total reflection effect of light traveling in the direction of the substrate 1 and reduce the generation of internal waste heat. However, the light traveling toward the substrate is not reused, and the light extraction of the component cannot be effectively improved. Efficiency and overall brightness. Therefore, research is being conducted to improve the current substrate structure in order to enhance the light extraction efficiency and overall luminance of the component when the LED is used to form a light-emitting diode or even any solid-state light-emitting component, and to extend the component actual operation. Life expectancy is the goal of the current academic community. SUMMARY OF THE INVENTION The purpose of the invention is to provide a method for fabricating a patterned substrate to increase the probability of light reflection incident on the substrate, and to further apply a 1-inch substrate to form a high light extraction rate and a high 70 pieces of solid state light with luminous brightness. Thus, the method of fabricating the patterned substrate of the present invention comprises the steps of: first forming a film of material on a substrate. After 2, the first soft-baked material (4) is used to make the (4) base and bond. Next, the film of material is exposed in a predetermined pattern. The η 帛 human H 彡 material film ‘ enhances the bond strength between the film of the material and the substrate.圏*ΐ, developing the film of the material such that the film of the material forms a plurality of spaced-apart two and the thickness of each of the pattern blocks relative to the top surface of the substrate is 0.4^.. the diameter of the region connected to the top surface of the substrate The length is the claw ~ 5 # m 〇 开 %: After: each of the pattern blocks is baked, so that each pattern block is subjected to shape conversion by heat/over. The method of forming an anisotropic engraving of the plurality of pattern blocks and the partial region of the substrate along the pattern block to form a body of the package = and the plurality of layers are formed at intervals The deflecting plate of the top surface of the body has a curved surface, and the thickness of the surface of the body top 200847470 is 〇.3/zm~4/zm, and the diameter of the area connected to the top surface of the body is 1 // m~4/zm, and the thickness to length ratio is 〇.3~4. The effect of the invention lies in the selection of the material of the material film, and the temperature of the first and second soft-bake and the baking temperature, and the substrate with the pre-strained refractor is made to take the south incidence. The probability of light reflection to the substrate can be further applied to the solid-state light-emitting element that forms a high light extraction rate and a high light-emitting luminance. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to FIG. 3, a first preferred embodiment of the method for fabricating a patterned substrate of the present invention is for forming a substrate 6 having a semi-ellipsoidal refractive body 62 as shown in FIGS. 4 and 8 to substantially enhance human incidence. The probability of light reflection of the substrate 6 can further be applied to the formation of the solid-state light-emitting element, and the light extraction efficiency and the overall light-emitting luminance of the solid-state light-emitting element can be greatly improved. The first preferred embodiment comprises the steps described below. Referring to Figures 3 and 5, first, a step 4 of forming a film of material 300 on the substrate is performed, and the material of the material is a series of photoresists. Then, step 42 is carried out, and the material film 300 is soft-baked for the first time at 9 degrees Celsius, so that the material film 3〇〇 is tightly bonded to the substrate 2〇〇. Take 200847470 and proceed to step 300. 43' After exposing the bond between the secondary soft bake of the material film in a predetermined pattern, proceeding to step 44, at the temperature of 120 degrees Celsius, the film of the material is 30,000, to enhance the enthalpy from the enthalpy. The material film 300 is bonded to the substrate 2 to have a strength. > Read Fig. 3 and Fig. 6 'Next, proceeding to step 45, developing the film 3 of the material to form a plurality of spaced-apart pattern blocks, and each pattern block is columnar And the thickness of the top surface of the substrate is about 2.2 / / m, the grip length of the region connected to the top surface of the substrate 2 is about 3 / 7 Figure 7 ' Then, proceed to step 46, in Celsius temperature After baking the per-K case, for about half an hour, the per-pattern block 3〇〇' causes a shape conversion via a thermal shaping process. Referring to FIG. 3 and FIG. 8 , finally, performing step 47, performing anisotropic etching, removing the complex pattern block 3GG along the direction of the substrate 2〇〇 along the any pattern block 3〇〇, and the A partial region of the substrate forms a substrate 6 including a plate-like body 61' and a plurality of refractive bodies 62 formed at intervals on the top surface of the body 61. Each of the refractive bodies 62 is semi-spherical and has - The curved surface 621 and the thickness h of the top surface of the main body 61 are such that the radial length R of the region connected to the top surface of the main body 61 is 0.5 and the thickness 匕 diameter R ratio is 0.5. The first preferred embodiment produces a refractive body 62 having a semi-ellipsoidal shape by appropriately selecting the material of the material film 3〇〇 and matching the appropriate [, the temperature of the secondary soft baking and the baking temperature. The substrate 6 is designed to greatly increase the chance of light reflection into the substrate 6 into 200847470. Referring to FIG. 9 again, the substrate 6 obtained by using the first preferred embodiment is formed on a side of the substrate 6 including the plurality of refractors 62 when a light-emitting diode is formed. The epitaxial film 100 that generates light in a photoelectric effect manner, since a part of the light that is incident on the substrate 6 can be reflected by the complex refractor 62 and is emitted upward and backward in a direction opposite to the substrate 6, the application of the first The light-emitting diode ' formed by the substrate 6 prepared in a preferred embodiment will have the plurality of semi-spherical refractive bodies 62, -f, thereby greatly increasing the light reflection toward the substrate 6 to emit The light-emitting diode-opportunity greatly increases the light extraction efficiency and the overall light-emitting brightness of the light-emitting diode (refer to FIG. 10 and FIG. 9 , the light formed by the substrate 6 obtained by using the first preferred embodiment) The luminance of the diode is increased by about 60% compared with the luminance of the current LED; at the same time, the amount of light which is totally limited to the total reflection in the LED body is reduced, and the generation of waste heat is reduced to prolong The actual working life of the component. Referring to Figures 12 and 13, in addition, due to the interfacial effect between the substrate 6 having the semi-spherical shape (the substrate 62 and the epitaxial film 1), the application is far from the first preferred embodiment. The operating voltage of the light-emitting diode formed by the substrate 6 is reduced by about 〜2 to 0.4% compared with the current operating voltage of the light-emitting diode. Referring to FIG. 14, a second preferred embodiment of the method for fabricating the patterned substrate of the present invention is shown in FIG. It is a substrate 6 for forming a refractive body 62 having a convex top cylindrical shape as shown in FIG. 19 to greatly increase the probability of light reflection incident on the substrate 6, and the substrate 6 can be further applied to form solid state light. Components, and 9 200847470 greatly enhances the light extraction efficiency and overall luminance of the solid state light emitting device. The second preferred embodiment comprises the following steps. Referring to Figure 51 and Figure 15, first, step 51 is performed on a substrate. Forming a layer material film _, wherein the substrate includes a base layer 201, and a buffer layer 202 formed on the base layer 201 and having a thickness of A to 〇A, and the material of the buffer layer 2G2 may be Is Shao, recorded, network, platinum to 胄, The alloy formed by any two or more of the above elements is made of a material selected from the EpG series of photoresists. Then, step 52 is performed at a temperature of 9 (rc~11〇χ:τ first time) _, the material (10)_ is closely associated with the buffer layer 0 300. Next, proceeding to step 53, after exposing the material film in a certain pattern, proceeding to step 54, at a temperature of 9 〇〇c~U (rc) The second-baked 4 material film 3GG' is used to enhance the bonding strength between the material film 3 (9) and the buffer layer 2〇2. Referring to Figures 14 and 16, then, step 55 is performed to develop the material film 300. The material film 3〇〇 forms a plurality of spaced-apart pattern blocks, and = every pattern i ghost 300, is columnar, and the thickness of the top surface of the buffer layer is 疋1 · 2 // m, and the buffer The diameter of the area where the top surface of the layer 2〇2 is connected is 3·5 // m. ί 1 Θ 14 and the figure η ' Then, step % is performed, and each pattern block is baked at a temperature of 120 C to 150 c Celsius. 3〇〇, a predetermined time, so that the mother-pattern block _, through the thermal shaping process, initiates shape conversion. 10 200847470 See Figure 14 and Figure 18 Then, proceeding to step 57, performing an anisotropic etching to remove the region where the buffer layer 202 is not covered by the complex pattern block 3〇〇. Referring to FIG. 14 and FIG. 19, finally, proceeding to step 58, performing non-equal Directional etching, along the pattern block 300, in the direction of the substrate 2, removing the plurality of pattern blocks 300, the buffer layer 202 and a partial region of the substrate layer 2〇1, forming a a plate-shaped body 61, and the plurality of substrates 6 formed at intervals on the top surface of the body 61, each of the refractive bodies 62 having a convex top cylindrical shape and having a top surface facing the body 61 An extended surrounding surface 622, and a curved surface 621 extending upward and inward from the top edge of the surrounding surface 622 and having a parabolic surface shape, and the thickness h of each of the refractive bodies 62 relative to the top surface of the body is 0.3/zm. 4//m, the length of the area connected to the top surface of the body 61 is 1//111~4//111, and the thickness 11 is the length ratio of 〇3 / - «^4 〇. The embodiment provides a method of fabricating a patterned substrate of another substrate 6 in another aspect. In addition to the first and second preferred embodiments described above, it is only necessary to slightly change the material of the material film 300, and the temperature of the first and second soft baking and the baking temperature can be obtained. The substrate 6 of the refractive body of the aspect has, for example, a substrate 6 having a semi-spherical, semi-ellipsoidal, and bimodal refractive body 62 as shown in FIGS. 20, 21, and 22; or as shown in FIGS. 23 and 24. The substrate 6', wherein the per-refractor 62 has a curved surface 62 extending downward from the top surface of the body 61 and a bottom surface (2) extending inward from the bottom edge of the curved surface 621 and parallel to the top surface of the body 61; There is also a base 11 200847470 board as shown in FIG. 25, wherein each of the refractors 62 has a 261 ' extending downward from the body 6" and extends inwardly from the bottom edge of the curved surface 621 and is arced The bottom surface 623 of the shape; in addition, the substrate 6 shown in Fig. 100, wherein the substrate 6 further comprises a plurality of sub-refractive bodies 63 respectively formed on the top surface of the body 61 and having a minor curved surface 631, the per-refractive body 63 Is between any two adjacent refractive bodies/2, and each of the secondary refractive bodies 63 is opposite to the top surface of the body 61 Cloth thickness 0.3 # m~4 # m, and the path length of the surface area 61 of the coupling body R 'is a' and a thickness h 'path length r, is the ratio of square 15~8.基板 基板 基板 本 本 本 本 本 本 本 本 本 本 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板The substrate 6 having the refractive bodies 62 in various forms can be produced, and therefore will not be described again. In summary, the method for fabricating the patterned substrate of the present invention can be prepared to have a predetermined state by appropriately selecting the material of the material film 300 and adjusting the temperature of the first and second soft baking and the baking temperature. The substrate 6' of the refracting body is used for the light reflection of the substrate 6 to the substrate 6, and the substrate 6 is applied to the solid-state light-emitting element for producing high light extraction rate and high light-emitting brightness. It does achieve the object of the invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change of the patent application and the description of the invention according to the present invention is Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing a current light-emitting diode; 12 200847470 FIG. 2 is a schematic view showing another current light-emitting diode; FIG. 3 is a flow chart illustrating the present invention. A first preferred embodiment of the method for fabricating a patterned substrate; FIG. 4 is a scanning electron microscope image showing the substrate produced by the manufacturing method of FIG. 3; FIG. 5 is a schematic view showing step 41 of FIG. Figure 6 is a schematic view showing step 45 of Figure 3; Figure 7 is a schematic view showing step 46 of Figure 3; Figure 8 is a schematic view of step 47 of Figure 3; Figure 9 is a schematic view of Figure 3 The substrate prepared by the manufacturing method is applied to form a light-emitting diode; FIG. 10 is a function diagram comparing the light-emitting diodes of FIG. 9 with the current light-emitting diodes; FIG. 11 is another function graph 'comparison FIG. 12 is a function diagram comparing the operating voltages of the light-emitting diode of FIG. 9 with the current light-emitting diode; FIG. Figure, comparing the light-emitting diode of Figure 9 with the current FIG. 14 is a schematic view showing a preferred embodiment of a method for fabricating a patterned substrate of the present invention; FIG. 15 is a schematic view showing step 51 of FIG. 14; FIG. FIG. 14 is a schematic diagram showing step 56 of FIG. 14; 13 200847470 FIG. 18 is a schematic diagram showing step 57 of FIG. 14; FIG. 19 is a schematic diagram showing step 58 of FIG. 14; Figure 20 is a schematic view showing the state of the substrate produced by the manufacturing method of the present invention, Figure 21 is a schematic view showing the sadness of the substrate produced by the manufacturing method of the present invention, and Figure 22 is a schematic view showing the present invention FIG. 23 is a schematic view showing a state of a substrate* produced by the manufacturing method of the present invention; and FIG. 24 is a schematic view showing the sorrow of the substrate produced by the manufacturing method of the present invention; 25 is a schematic view showing the state of the substrate produced by the manufacturing method of the present invention; and FIG. 26 is a schematic view showing the state of the substrate produced by the manufacturing method of the present invention. 14 200847470 % / \ [Main component symbol description] 100 Amorphous film 51 Formed on a substrate 200 substrate A layer of material film 201 Base layer 52 First soft baked material 202 Buffer layer film 300 Material film 53 Exposure Material film 3005 pattern block 54 second soft baking of the material 41 forming a film on a substrate, a film of material 55, developing the film of material, 42 first soft baking the material to form the material film into a plurality of pattern blocks 43 Exposing the material film 56 to bake the pattern 44, second soft baking the material block film 57, removing the buffer layer, undeveloping the material film, and forming a plurality of patterns of the material film by the plurality of pattern blocks Block 58 bakes each of the patterns toward the substrate along the pattern block 46, removing the plurality of patterns 47 along the pattern block, the buffer layer toward the substrate, and the substrate The portion of the layer removes the complex pattern sub-region block and the portion of the material 6 substrate sub-region 61 body 15 200847470 62 refractor 631 sub-surface 621 surface h thickness 622 surrounding surface R Long bottom surface 623 h, the thickness of the refractile bodies 63 R, 16 Diameter Length