TW200846833A - Photolithography process - Google Patents

Abstract

A photolithography process for process a substrate comprises the following steps. First, an exposure beam, an optical imaging unit and a micromirror element are provided. The exposure beam is reflected by the micromirror element, passing the optical imaging unit to the substrate. Then, the micromirror element modulates the exposure beam to form a first pattern on a focus area of the substrate. Next, the focal length of the optical imaging unit is modified to focus the first pattern on the focus area. Finally, the substrate is moved, and the exposure beam applies an exposure step on a photolithography area of the substrate.

Description

200846833 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a lithography method, and more particularly to a lithography method suitable for laboratory research needs. [Prior Art] In the thin film transistor, the micro-product, and the semiconductor process, it is necessary to pass through the lithography step to obtain the desired microstructure. The shape or characteristics of the microstructure are defined by the reticle pattern on the reticle. In the technique of the prior art, the reticle pattern is mainly defined by a quartz chrome mask. However, due to the high precision and high cost of quartz chrome-plated reticle, only semiconductor factories or specific research units have the ability to produce. Therefore, the general academic unit is not easy to apply quartz chrome masks to design special microstructures during research. SUMMARY OF THE INVENTION The present invention is a Φ lithography method for solving the problems of the prior art, for performing a lithography process on a substrate, including the following steps. First, an exposure beam, an optical imaging unit, and a micromirror element are provided, the exposure beam being reflected by the micromirror element, through which the optical imaging system is projected onto the substrate. Then, the exposure beam is modulated by the micromirror device to form a first exposure pattern on a focus area of the substrate. Further, the focal length of the optical imaging unit is adjusted to accurately focus the first exposure pattern over the substrate. Finally, the substrate is moved to expose a lithographic region of the substrate. By applying the lithography method of the invention, the micromirror component can be quickly and conveniently determined

Clienfs Docket No.: 0950065tw TT’s Docket No: 0912-A50919-TW/Draft-i7Lemon 5 200846833 - The original exposure pattern eliminates the traditional cumbersome and expensive quartz chrome-plated reticle manufacturing process. Therefore, the lithography method of the present invention can be applied to schools and the like to change and design a specific exposure pattern at any time to develop a special two-construction: [Embodiment] Referring to FIG. 1, a lithography applied to the present invention is shown. The lithography apparatus 100' of the method includes an exposure light source 11A, a micromirror element 12A, a second micromirror control unit 130, an optical imaging unit 140, and a platform 15A. A substrate is disposed on the platform 15A. The optical imaging unit θ14 includes an eyepiece 141 and a lens group 142. The exposure light source 110 provides an exposure light beam 110, which is reflected by the micromirror element 120, passes through the optical imaging unit 14A, and is projected onto the substrate 10 to perform an exposure process on the substrate. The micromirror element J 20 modulates the exposure beam 101 to project an exposure pattern onto the substrate 1〇. The micromirror control unit 130 is coupled to the micromirror device 120 to control the micromirror device 120 to modulate the exposure beam. Referring to Fig. 2, there is shown a lithography method of the present invention. First, an exposure beam 101, an optical imaging unit 140, and a micromirror device 120 are provided. The exposure beam 〇1 is reflected by the micromirror device 120. And passing through the optical imaging system 140, being projected onto the substrate 10 (S11); then, the exposure beam ι〇1 is modulated by the micromirror device 120 to form a first on a focus area of the substrate 1 Exposure pattern (S12); further, adjusting a focal length of the optical imaging unit 140 to accurately focus the first exposure pattern on the substrate 10 (S13); and moving the substrate 10 to the substrate 10 Exposure is performed in a lithography area (S14). The use of the person through the eyepiece 141 to observe the exposure beam ι〇1 is not accurate

Client's Docket No.: 0950065tw TT^ Docket No: 〇912-A50919-TW/Drafl-f/Lemon 6 200846833 Focus on the surface of the substrate 10. Referring to Fig. 3, a schematic view showing the surface of the substrate 1 is shown, wherein the substrate 10 includes at least one in-focus area 1! and a plurality of lithographic areas 12. When the focusing process is performed, the exposure beam 1〇1 forms a first exposure pattern on the substrate 1: focus area 11 to perform focusing. When the focusing process is completed, the micromirror device 120 modulates the exposure beam 1〇1 to form a full black pattern on the substrate 10. Thus, the exposure beam 101 does not damage the substrate 10 during the movement of the substrate. Next, the moving base = 10, the exposure beam 101 is aligned with the lithography area Π to expose the photographic area 12, and the exposure pattern is defined on the eigenal area 12, and the exposure beam 101 can be a blue light beam. Its wavelength is about nanometer. The exposure beam 101 can also be a green beam having a wavelength of approximately 530 nm. In an embodiment, the exposure beam 1 〇 1 can be filtered through a filter, an initial beam, and the filter can be disposed at any position of the optical path of the exposure beam 101 in the present invention. The exposure light source 110 and the micromirror device 120 can be implemented by a digital projection device using a digital light processing (Digital Light Processing, dlptm) _. The optical imaging unit 140 can be a gold microscope or a stereo microscope. Optical microscope. ... In the variant, the lithography apparatus 100 can focus on the focused beam before focusing through the exposure beam to improve the efficiency of the entire alignment process. Refer to Figure 4 for focusing on the transmitted beam. The method may further include the following steps. First, a focus beam is provided, and the focus beam is projected onto the substrate (S21); then, the focus of the optical imaging unit is adjusted by the focus beam (S22). To learn the white light provided by the imaging unit 140. —

Client*s Docket No.: 0950065tw TT^ Docket No: 0912-A50919-TW/Draft-fi^Lemon ^ 200846833 When focusing with the focus beam, the user observes the substrate 10 through the eyepiece 141. After the first exposure pattern is defined on the substrate 10, the substrate 10 is subjected to operations such as development and etching. Then, the substrate 10 is re-transferred to the exposure light source 110, and the substrate 10 is re-applied by the exposure light source 110 to define a second exposure pattern on the lithography area 12. Referring to FIGS. 5a and 5b, the first exposure pattern 20 includes a first alignment mark 21, and the second exposure pattern 30 includes a second alignment mark number 31 when the second exposure pattern 30 is used. When the lithography area is exposed, the second alignment mark 31 projected by the exposure beam reproduces the first alignment mark 21 on the substrate. By applying the lithography method of the present invention, the micro-mirror element can be quickly and conveniently defined to define the exposure pattern, thereby eliminating the traditional cumbersome and expensive quartz chrome-plated reticle manufacturing process. Therefore, the lithography method of the present invention can be applied to a research unit such as a school, and a specific exposure pattern can be changed and designed at any time to develop a special microstructure. The present invention has been described above with reference to the preferred embodiments thereof, and is not intended to limit the invention, and may be modified and modified without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

Client's Docket No.: 0950065tw TT^ Docket No: 0912-A50919-TW/Draft-f/Lemon 8 200846833 [Simple diagram of the drawing] The brother 1 shows the lithography apparatus applying the second (10)n & method of the present invention; Figure 2 shows a lithography method of the present invention; Figure 3 shows a schematic view of the surface of the substrate; Figure 4 shows the step of focusing the focus beam first; Figure 5a shows the first alignment mark; and 5b The figure shows the second alignment mark.

120~ micromirror element; 140~ optical imaging unit; 142~ lens group; S11, S12, S13, S14~ method steps; S21, S22~ method steps. [Main component symbol description] 10~substrate; 12~ lithography area; 21~first alignment mark; 31~second alignment mark; 1〇1~exposure beam; 11~focus area; 20~first exposure pattern ; 30 ~ second exposure pattern; 100 ~ lithography equipment; ~ exposure light source; 13 〇 ~ micro mirror control unit; 141 ~ eyepiece 15G ~ platform

Client’s Docket No.: 0950065tw TT’s Docket No: 0912-A50919-TW/Draft-f/Lemon 9

Claims (1)

200846833 Ten, the scope of application for patents: 瞧 瞧# #击 a兮 elsewhere - imaging early 兀 and a micro-mirror component, projected onto the substrate; a first exposure pattern is opened on one of the substrates; the focal length of the optical imaging unit is adjusted to be accurately focused on the substrate; and/or the pattern is a fff substrate, and the substrate is The lithography area is exposed. The lithography method of claim 1, wherein the pair of wires are projected onto the substrate; and the substrate is observed through the focusing beam to make the optical imaging difficult The focal length of the unit. > 3 · The lithography method described in the second paragraph of the patent scope is a white light beam.丨, '彳 4· The lithography method as described in claim 1 of the patent scope is that the exposure beam is a blue light beam. 5. The lithography method of claim 4, wherein the wavelength of the exposure beam is about 420 nm. 6. The lithography method of claim 1, wherein the exposure beam is a green light beam. 7. The lithography method as described in claim 6 of the patent scope has an exposure beam having a wavelength of about 530 nm. Wherein, among them, wherein, the TT'sDocket^o^ 10 200846833 8 · as described in the scope of the patent application, filtering - the initial beam to obtain the exposure beam Ρ〆 〆, has included 9:. The lithography method of the present invention, wherein the micro-mirror device is configured to expose the light beam to form a king/:: on the substrate, and the pattern is as described in claim 1 The method further includes: Exposing the lithography region with the first exposure pattern; developing the first exposure pattern; and exposing the lithography region with a second exposure pattern. The lithography method of claim 9, wherein the first exposure pattern comprises a first alignment mark, the second exposure pattern comprises a second alignment mark, and the second alignment mark When the exposure pattern exposes the lithographic region, the second alignment mark projected by the exposure beam overlaps the first alignment mark on the substrate. Client's Docket No.: 0950065tw TT^ Docket No: 0912-A50919-TW/Draft-f/Lemon 11