TW200845542A - Power switch circuit - Google Patents

Power switch circuit Download PDF

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TW200845542A
TW200845542A TW96116189A TW96116189A TW200845542A TW 200845542 A TW200845542 A TW 200845542A TW 96116189 A TW96116189 A TW 96116189A TW 96116189 A TW96116189 A TW 96116189A TW 200845542 A TW200845542 A TW 200845542A
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Taiwan
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transistor
pull
output signal
voltage level
inverter
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TW96116189A
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Chinese (zh)
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TWI347730B (en
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Jer-Hau Hsu
Fu-Nian Liang
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Macronix Int Co Ltd
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Abstract

A power switch circuit comprises a level shift, a first inverter, a second inverter and an output circuit. The level shift outputs a first output signal and a second output signal according to a control signal. The first inverter outputs a first inverse output signal according to the first output signal, and the second inverter outputs a second inverse output signal according to the second output signal, wherein the first inverse output signal and the second inverse output signal are non-overlap. The output circuit selectively outputs a first voltage level or a second voltage level according to the first inverse output signal and the second inverse output signal.

Description

200845542200845542

三達編號:TW3681PA 九、發明說明: 【發明所屬之技術領域】 本發明疋有關於一種電源切換電路,且特別是有關於 一種減少暫態電流及功率消耗的電源切換電路。 【先前技術】 請參照第1圖,其繪示係為傳統電源切換電路。傳統 ^ 電源切換電路10包括位準偏移器n〇(Level Shift)及輸 出電路120。位準偏移器no根據控制信號VSS-SEL輸出 輸出信號N0及輸出信號N1,輸出電路12〇根據輸出信號 N0及輸出號N1決定其輸出電壓等於電壓位準Nv%或電 壓位準GND。 / 進一步來說,位準偏移器110更包括p型電晶體ML〇、 P。型電晶體ML卜N型電晶體ML2、N型電晶體ML3及反相 器ILOcp型電晶體ML〇之控制端係耦接至反相器il〇之 ⑩輸入端,而P型電晶體ML1之控制端係耦接至反相器IL〇 之輸出端。P型電晶體ML0及P型電晶體ML1之第一端係 接收電壓位準VDD,而N型電晶體ML2及N型電晶體ML3 之第二端係接收電壓位準NVSS。 P型電晶體ML0及p型電晶體ML1之第二端係分別耦 接至N型電晶體ML2及N型電晶體ML3之第一端,且]^型 電晶體ML2及N型電晶體ML3之控制端分別耦接至p型電 晶體ML1及p型電晶體ml〇之第二端。 輸出電路120更包括拉升電晶體MPU及拉降電晶體 5 200845542达达编号号: TW3681PA IX. Description of the Invention: [Technical Field] The present invention relates to a power supply switching circuit, and more particularly to a power supply switching circuit for reducing transient current and power consumption. [Prior Art] Please refer to FIG. 1 , which is a conventional power switching circuit. The conventional ^ power switching circuit 10 includes a level shifter n〇 (Level Shift) and an output circuit 120. The level shifter no outputs the output signal N0 and the output signal N1 according to the control signal VSS-SEL, and the output circuit 12 determines that its output voltage is equal to the voltage level Nv% or the voltage level GND according to the output signal N0 and the output number N1. / Further, the level shifter 110 further includes p-type transistors ML 〇, P. The control transistor of the type transistor ML, the N-type transistor ML2, the N-type transistor ML3, and the inverter ILOcp-type transistor ML〇 is coupled to the input terminal of the inverter il〇, and the P-type transistor ML1 The control end is coupled to the output of the inverter IL〇. The first ends of the P-type transistor ML0 and the P-type transistor ML1 receive the voltage level VDD, and the second ends of the N-type transistor ML2 and the N-type transistor ML3 receive the voltage level NVSS. The second ends of the P-type transistor ML0 and the p-type transistor ML1 are respectively coupled to the first ends of the N-type transistor ML2 and the N-type transistor ML3, and the ^-type transistor ML2 and the N-type transistor ML3 The control ends are respectively coupled to the second ends of the p-type transistor ML1 and the p-type transistor ml. The output circuit 120 further includes a pull-up transistor MPU and a pull-down transistor 5 200845542

•三達編號:TW3681PA MPD。拉升電晶體MPU及拉降電晶體MpD之第一端分別接 收電壓位準NVSS及電壓位準GND,且拉升電晶體_及拉 降,晶體MPD之控制端分別耦接至ρ型電晶體紅〇及ρ型 電晶體ML1之第二端,以選擇性地輸出電壓位準NVSS或 電壓位準GND。 請參照第2圖,其繪示係為傳統電源切換電路之波形• Sanda number: TW3681PA MPD. The first ends of the pull-up transistor MPU and the pull-down transistor MpD respectively receive the voltage level NVSS and the voltage level GND, and pull up the transistor _ and pull-down, and the control ends of the crystal MPD are respectively coupled to the p-type transistor The second end of the red 〇 and p-type transistor ML1 is to selectively output a voltage level NVSS or a voltage level GND. Please refer to FIG. 2, which is a waveform of a conventional power switching circuit.

圖。舉例來說,電壓位準VDD等於2· 5V,而電壓位準NVSS 等於—7V。當控制信號VSS-SEL由2· 5V改變為後,輸 出信號NO由-7V改變為2·5ν,而輸出信號附由2 5V改 變為-7V’使得輸出電路12〇輸出之電壓位準由—改 變為0V〇 相反地’當控制信號VSS-SEL由0V改變為2.5V後, 輸出信號NO由2. 5V改變為-7V,而輸出信號N1由-7V改 變為2· 5V ’使得輸出電路12〇輸出之電壓位準由改變 - 7V〇 然而’由於輸出信號NO及輸出信號N1係部分重疊 (Overlap) ’使得拉升電晶體mpu及拉降電晶體MPD於部 分時間被同時致能,如54的及73ns。電流n(MPU)流經 拉升電晶體MPU的同時,電流n(MPD)亦流經拉降電晶體 MPD。換§之’此時暫態電流(Transient Current)將流經 拉升電晶體MPU及拉降電晶體MPD,而造成傳統電源切換 電路10的功率消耗增加。 200845542Figure. For example, the voltage level VDD is equal to 2.5V and the voltage level NVSS is equal to -7V. When the control signal VSS-SEL is changed from 2·5V, the output signal NO is changed from -7V to 2·5ν, and the output signal is changed from 2 5V to -7V' so that the voltage level of the output circuit 12〇 output is determined by — Change to 0V 〇 Conversely 'When the control signal VSS-SEL is changed from 0V to 2.5V, the output signal NO is changed from 2. 5V to -7V, and the output signal N1 is changed from -7V to 2.5V" so that the output circuit 12 The voltage level of the output is changed by -7V. However, because the output signal NO and the output signal N1 are partially overlapped, the pull-up transistor mpu and the pull-down transistor MPD are simultaneously enabled at part time, such as 54. And 73ns. While the current n (MPU) flows through the pull-up transistor MPU, the current n (MPD) also flows through the pull-down transistor MPD. In other words, the transient current (Transient Current) will flow through the pull-up transistor MPU and pull-down transistor MPD, resulting in an increase in the power consumption of the conventional power supply switching circuit 10. 200845542

三達編號:TW3681PA 【發明内容】 本發明係有關於一種電源切換電路,位準偏移器經第 一反相器及第二反相器耦接至輸出電路,以提供輸出電路 互不重疊的第一反相輸出信號及第二反相輸出信號。如此 一來,將避免暫態電流(Transient Current)的產生並減 少電源切換電路的功率消耗。 根據本發明,提出一種電源切換電路。電源切換電路 包括位準偏移器、第一反相器、第二反相器及輸出電路。 • 位準偏移器根據一控制信號輸出第一輸出信號及第二輸 出信號。第一反相器根據第一輸出信號輸出第一反相輸出 信號,且第二反相器根據第二輸出信號輸出第二反相輸出 信號。其中,第一反相輸出信號與第二反相輸出信號係互 不重疊。輸出電路根據第一反相輸出信號及第二反相輸出 信號選擇性地輸出第一電壓位準或第二電壓位準。 為讓本發明之上述内容能更明顯易懂,下文特舉一較 _ 佳實施例,並配合所附圖式,作詳細說明如下: 【實施方式】 請參照第3圖,其繪示係為依照本發明一較佳實施例 的一種電源切換電路之方塊圖。電源切換電路30包括位 準偏移器310(Level Shift)、輸出電路320、反相器330 及反相器340。位準偏移器310根據控制信號LSEL輸出 輸出信號N4至反相器330,並根據控制信號v_SEL輸出輸 出信號N5至反相器340。 200845542The invention relates to a power switching circuit. The level shifter is coupled to the output circuit via the first inverter and the second inverter to provide an output circuit that does not overlap each other. a first inverted output signal and a second inverted output signal. In this way, the generation of transient current (Transient Current) is avoided and the power consumption of the power switching circuit is reduced. According to the present invention, a power supply switching circuit is proposed. The power switching circuit includes a level shifter, a first inverter, a second inverter, and an output circuit. • The level shifter outputs a first output signal and a second output signal based on a control signal. The first inverter outputs a first inverted output signal according to the first output signal, and the second inverter outputs a second inverted output signal according to the second output signal. The first inverted output signal and the second inverted output signal do not overlap each other. The output circuit selectively outputs the first voltage level or the second voltage level according to the first inverted output signal and the second inverted output signal. In order to make the above-mentioned contents of the present invention more comprehensible, the following is a detailed description of the preferred embodiment, and the following description is given in detail: [Embodiment] Please refer to FIG. 3, which is shown as A block diagram of a power switching circuit in accordance with a preferred embodiment of the present invention. The power switching circuit 30 includes a level shifter 310 (Level Shift), an output circuit 320, an inverter 330, and an inverter 340. The level shifter 310 outputs the output signal N4 to the inverter 330 in accordance with the control signal LSEL, and outputs the output signal N5 to the inverter 340 in accordance with the control signal v_SEL. 200845542

三達編號:TW3681PA 反相器330及340例如為互補式金屬氧化物半導體 (Complementary Metal-Oxide- Semi conductor, CMOS)反 相器。反相器330及340分別接收輸出信號N4及N5,並 將輸出信號N4及N5反相後分別輸出互不重疊 (Non-Overlap)之反相輸出信號N6及N7至輸出電路320。 輸出電路320接收第一反相輸出信號N6及第二反相 輸出信號N7,並根據第一反相輸出信號N6及第二反相輸 出信號N7選擇性地輸出電壓位準VI或電壓位準V2。由於 馨 反相輸出"5虎N 6及N 7彼此係互不重豐,因此,能避免暫 態電流(Transient Current)的產生,進而減少電源切換 電路30的功率消耗。 進一步來說,電源切換電路30可例如為正電源切換 電路或負電源切換電路。若電源切換電路30為正電源切 換電路,則電壓位準VI及電壓位準V2係大於〇。相反地, 若電源切換電路30為負電源切換電路,則電壓位準VI及 電壓位準V2係小於等於0。Sanda number: TW3681PA Inverters 330 and 340 are, for example, Complementary Metal-Oxide-Semiconductor (CMOS) inverters. The inverters 330 and 340 receive the output signals N4 and N5, respectively, and invert the output signals N4 and N5 to output the non-overlapping inverted output signals N6 and N7 to the output circuit 320, respectively. The output circuit 320 receives the first inverted output signal N6 and the second inverted output signal N7, and selectively outputs the voltage level VI or the voltage level V2 according to the first inverted output signal N6 and the second inverted output signal N7. . Since the sinusoidal output "5 Tiger N 6 and N 7 are not mutually exclusive, the generation of transient current (Transient Current) can be avoided, thereby reducing the power consumption of the power switching circuit 30. Further, the power switching circuit 30 can be, for example, a positive power switching circuit or a negative power switching circuit. If the power switching circuit 30 is a positive power switching circuit, the voltage level VI and the voltage level V2 are greater than 〇. Conversely, if the power supply switching circuit 30 is a negative power supply switching circuit, the voltage level VI and the voltage level V2 are less than or equal to zero.

請參照第4圖,其繪示係為正電源切換電路之電路 圖。正電源切換電路40包括位準偏移器410、輸出電路 420、反相器ΙΒ0及反相器IB1。位準偏移器410根據控制 信號VCC_SEL輸出輸出信號N8及N9。反相器ΙΒ0及IB1 將輸出信號N8及N9反相後輸出反相輸出信號N10及Nil, 且反相輸出信號N10及Nil互不重疊(Non-Overlap)。輸 出電路420係根據反相輸出信號N10及Nil決定其輸出電 壓VCC等於電壓位準VPP或電壓位準VDD,電壓位準VPP 8 200845542Please refer to FIG. 4, which is a circuit diagram showing a positive power switching circuit. The positive power supply switching circuit 40 includes a level shifter 410, an output circuit 420, an inverter ΙΒ0, and an inverter IB1. The level shifter 410 outputs output signals N8 and N9 in accordance with the control signal VCC_SEL. Inverters ΙΒ0 and IB1 invert the output signals N8 and N9 and output inverted output signals N10 and Nil, and the inverted output signals N10 and Nil do not overlap each other (Non-Overlap). The output circuit 420 determines the output voltage VCC equal to the voltage level VPP or the voltage level VDD according to the inverted output signals N10 and Nil, and the voltage level VPP 8 200845542

三達編號:TW3681PA 例如為10V,而電壓位準VDD例如為2. 5V。 位準偏移器410更包括p型電晶體ML0、P型電晶體 ML1、N型電晶體ML2、N型電晶體ML3及反相器IL〇i型 電晶體ML2之控制端係耦接至反相器il〇之輸入端,而N 型電晶體ML3之控制端係耦接至反相器IL0之輸出端。p 型龟as體ML0及P型電晶體ml 1之第一端係接收電壓位準 VPP’而N型電晶體ML2及N型電晶體ML3之第二端係接 收電壓位準G·。 P型電晶體ML1之第二端、N型電晶體ML3之第一端、 P型電晶體ML0之控制端係耦接至反相器IB0的輪入端, 而P型電晶體ML0之第二端、N型電晶體ML2之第一端、p 型電晶體ML1之控制端係耦接至反相器IB1的輸入端。 輸出電路420更包括拉升電晶體MPU及拉降電晶體 MPD ’其中’拉升電晶體mpu及拉降電晶體mpd例如為p 型電晶體。拉升電晶體MPU及拉降電晶體MPD之第一端分 _ 別接收電壓位準VPP及電壓位準VDD,且拉升電晶體MPU 及拉降電晶體MPD之控制端分別耦接至反相器IB〇及反相 裔之輸出端。當拉升電晶體如^被致能時,電壓位準 VPP係經拉升電晶體MPU之第二端輸出。相反地,當拉降 電晶體MPD被致能時,電壓位準VDD係經拉降電晶體MPD 之弟一端輪出。 清參照第5圖,其繪示係為第4圖之反相器ΙΒ0及 IB1之細部電路圖。反相器IB〇及IM例如分別係由一個 P型電晶體ML4及一個N型電晶體ML5所組成。P型電晶 9 2008455425伏。 The TW3681PA is, for example, 10V, and the voltage level VDD is, for example, 2. 5V. The level shifter 410 further includes a p-type transistor ML0, a P-type transistor ML1, an N-type transistor ML2, an N-type transistor ML3, and an inverter IL〇i-type transistor ML2. The input terminal of the phase il il is coupled to the output terminal of the inverter IL0. The first end of the p-type turtle as body ML0 and the P-type transistor ml 1 receives the voltage level VPP' and the second end of the N-type transistor ML2 and the N-type transistor ML3 receives the voltage level G·. The second end of the P-type transistor ML1, the first end of the N-type transistor ML3, the control end of the P-type transistor ML0 are coupled to the wheel end of the inverter IB0, and the second end of the P-type transistor ML0 The first end of the N-type transistor ML2 and the control end of the p-type transistor ML1 are coupled to the input end of the inverter IB1. The output circuit 420 further includes a pull-up transistor MPU and a pull-down transistor MPD' wherein the 'pull-up transistor mpu and the pull-down transistor mpd are, for example, p-type transistors. The first end of the pull-up transistor MPU and the pull-down transistor MPD _ receive the voltage level VPP and the voltage level VDD, and the control terminals of the pull-up transistor MPU and the pull-down transistor MPD are respectively coupled to the inversion IB〇 and the output of the inverted phase. When the pull-up transistor is enabled, the voltage level VPP is output through the second end of the pull-up transistor MPU. Conversely, when the pull-down transistor MPD is enabled, the voltage level VDD is rotated by the other end of the pull-down transistor MPD. Referring to Fig. 5, there is shown a detailed circuit diagram of the inverters ΙΒ0 and IB1 of Fig. 4. The inverters IB and IM are respectively composed of a P-type transistor ML4 and an N-type transistor ML5, respectively. P-type electric crystal 9 200845542

Ξ,ΜΜΜ : TW3681PA 體ML4之第一端係接收電壓位準VPP,而Ν型電晶體ML5 之第二端係接收電壓位準G·。ρ型電晶體ML4之第二端 係耦接至Ν型電晶體ML5之第一端,且Ρ型電晶體ML4之 控制端係耦接至Ν型電晶體ML5之控制端。 ρ型電晶體ML4之導電參數石ρ係大於ν型電晶體ML5 之導電參數冷rP型電晶體ML4之導電參數(八, 而N型電晶體齓5之導電參數(凡=(|)八〇。其中,(I)為 ⑩電體之i度長度比,〜為電洞移動率;&為電子移動率; G為皁位面積之氧化層電容。 田¥包參數万p大於導電參數,即輸出電壓上升速 度大於下降速度。如此一來在先關後開的原則下將使得反 相,IB0及IB1輪出之反相輸出信號N1〇及N11彼此互不 重豐(Overlap)。如此一來,將避免拉升電晶體Mpu及拉 降電晶體MPD被同時導通時,所產生暫態電流价廳土恤 • Current),進而降低正電源切換電路40的功率消耗。 明參恥第6圖,其繪示係為正電源切換電路之波形 圖。舉例來說,電壓位準VDD等於2·5ν,而電壓位準vpp 等於10V。當控制信號VCC—SEL由2. 5V改變為〇v後,輸 出信號N8由0V改變為10V,而第二輪出信號N9由雨改 變為ον。反相輸出信號刚自10v改變為〇v,而反相輸 出信號m纟0V改變為10V,使得輪出電路之輸出電 壓VCC由10V改變為2. 5V。 相反地,當控制信號VCC—SEL由Gv改變為2 n 200845542Ξ, ΜΜΜ : The first end of the TW3681PA body ML4 receives the voltage level VPP, and the second end of the 电-type transistor ML5 receives the voltage level G·. The second end of the p-type transistor ML4 is coupled to the first end of the 电-type transistor ML5, and the control end of the 电-type transistor ML4 is coupled to the control end of the 电-type transistor ML5. The conductive parameter ρ of the ρ-type transistor ML4 is larger than the conductive parameter of the ν-type transistor ML5. The conductive parameter of the cold rP-type transistor ML4 (eight, and the conductive parameter of the N-type transistor 齓5 (where =(|) gossip (I) is the i-degree length ratio of 10 electric bodies, ~ is the hole mobility rate; & is the electron mobility; G is the oxide layer capacitance of the soap area. The field ¥ package parameter 10,000 is greater than the conduction parameter That is, the output voltage rise speed is greater than the fall speed. As a result, the principle of first turn-off and turn-on will cause the inversion, and the inverted output signals N1〇 and N11 of IB0 and IB1 are not overlapped with each other. In the first place, the transient current of the current supply switching circuit 40 is reduced when the pull-up transistor Mpu and the pull-down transistor MPD are simultaneously turned on, thereby reducing the power consumption of the positive power switching circuit 40. The figure is a waveform diagram of a positive power switching circuit. For example, the voltage level VDD is equal to 2·5 ν, and the voltage level vpp is equal to 10 V. When the control signal VCC_SEL is changed from 2. 5 V to 〇 v After that, the output signal N8 is changed from 0V to 10V, and the second round of the signal N9 is changed from rain to ν. The inverted output signal has just changed from 10v to 〇v, and the inverted output signal m纟0V is changed to 10V, so that the output voltage VCC of the wheel-out circuit is changed from 10V to 2. 5V. Conversely, when the control signal VCC- SEL changed from Gv to 2 n 200845542

三達編號:TW3081PA 輸出"is號N8由10V改變為0V ’而第二輸出信號Ng由ον 改變為10V。反相輸出號Ν10由評改變為ιον ,而反相 輸出js號Nil由10V改變為0V ’使得輪出電路420之輸出 電壓VCC由2. 5V改變為10V。 由於反相輸出信號N10及Nil係不重疊 (Non-Overlap),使得拉升電晶體MPU及拉降電晶體MPD 不會被同時致能。故不會產生暫態電流(Transient Current)同時流經拉升電晶體MPU及拉降電晶體mpd,進 ⑩ 而減少正電源切換電路40的功率消耗。 请參照弟7圖,其緣示係為負電源切換電路之電路 圖。負電源切換電路7 0包括位準偏移器71 〇、輸出電路 720、反相器IB0及反相器IB1。位準偏移器710根據控制 说VSS一SEL輸出輸出信號N12及N13。反相器ΙΒ0及iBi 分別將輸出#號N12及N13反相後輸出互不重疊 (Non - Overlap)之反相輸出信號N14及N15。輸出電路720 _ 根據反相輸出信號N14及町5選擇性地輸出電壓位準NVSS 或電壓位準GND。電壓位準NVSS例如為-7V,而電壓位準 GND例如為0V。 位準偏移器710更包括p型電晶體ml〇、P型電晶體 ΜΠ、N型電晶體ML2、N型電晶體ML3及反相器IL0。p型 電晶體ML0之控制端係耦接至反相器iL〇之輸入端’而^ 型電晶體ML1之控制端係耦接至反相器iL〇之輸出端。p 型電晶體ML0及P型電晶體MU之第一端係接收電壓位準 VDD,電壓位準VDD例如為2. 5v,而N型電晶體ML2及n 11 200845542 三達編號:TW3681PA 型電晶體ML3之第二端係接收電壓位準MSS。 P型電晶體ML1之第二端、N型電晶體肌3之第一端、 N型電晶體ML2之控制蠕係輕接至反相器、IB〇的輸入端,Sanda number: TW3081PA output "is number N8 changed from 10V to 0V' and the second output signal Ng changed from ον to 10V. The inverted output number Ν10 is changed from ιον to ιον, and the inverted output js number Nil is changed from 10V to 0V' so that the output voltage VCC of the turn-off circuit 420 is changed from 2.5V to 10V. Since the inverted output signals N10 and Nil do not overlap (Non-Overlap), the pull-up transistor MPU and the pull-down transistor MPD are not simultaneously enabled. Therefore, the transient current (Transient Current) is not generated while flowing through the pull-up transistor MPU and the pull-down transistor mpd, and the power consumption of the positive power switching circuit 40 is reduced. Please refer to the figure of brother 7, which is the circuit diagram of the negative power switching circuit. The negative power supply switching circuit 70 includes a level shifter 71 〇, an output circuit 720, an inverter IB0, and an inverter IB1. The level shifter 710 outputs output signals N12 and N13 in accordance with the control VSS_SEL. The inverters ΙΒ0 and iBi respectively invert the output ##N12 and N13, and output the inverted output signals N14 and N15 of the non-overlap. The output circuit 720 _ selectively outputs the voltage level NVSS or the voltage level GND according to the inverted output signals N14 and M. The voltage level NVSS is, for example, -7V, and the voltage level GND is, for example, 0V. The level shifter 710 further includes a p-type transistor ml, a P-type transistor, an N-type transistor ML2, an N-type transistor ML3, and an inverter IL0. The control terminal of the p-type transistor ML0 is coupled to the input terminal of the inverter iL, and the control terminal of the transistor ML1 is coupled to the output terminal of the inverter iL. The first end of the p-type transistor ML0 and the P-type transistor MU receives the voltage level VDD, and the voltage level VDD is, for example, 2. 5v, and the N-type transistor ML2 and n 11 200845542 Sanda number: TW3681PA type transistor The second end of the ML3 receives the voltage level MSS. The second end of the P-type transistor ML1, the first end of the N-type transistor muscle 3, and the control system of the N-type transistor ML2 are lightly connected to the input terminal of the inverter, IB〇,

而P型電晶體ML0之第二端、N型電晶體社2之第一端、N 型電晶體ML3之控制端係耦接至反相器Ιβ1的輪入端。 輸出電路720更包括拉升電晶體MPU及拉降電晶體 MPD ’其中,拉升電晶體MPU及拉降電晶體MPD例如為ΝThe second end of the P-type transistor ML0, the first end of the N-type transistor 2, and the control end of the N-type transistor ML3 are coupled to the wheel-in end of the inverter Ιβ1. The output circuit 720 further includes a pull-up transistor MPU and a pull-down transistor MPD', wherein the pull-up transistor MPU and the pull-down transistor MPD are, for example, Ν

型電晶體。拉升電晶體MPU及拉降電晶體MPD之第二端分 別接收電壓位準卿SS及電壓位準GND,且拉升電晶體則 及拉降電晶體MPD之控制端分別摩禺接至反相器IB1及⑽ 之輸出端。當拉升電晶體MPU被致能時,電壓位準係 I工拉升私曰曰體_之第一端輸出。相反地,當拉降電晶體 MPD被致能時,電壓位準VSS係經拉降電晶體MPD之第一 端輸出。 明參照第8圖,其繪示係為係為第7圖之反相器IB〇 及IB1之細部電路圖。反相器j別及Ιβ1例如分別係由一 個P t電B曰體ML6及一個N型電晶體ML7所組成。p型電 晶體ML6之第一端係接收電壓位準VDD,而N型電晶體ML7 之第二端係接收電壓位準NVSS。p型電晶體動之第二端 係耦接至N型電晶體ML7之第一端,且p型電晶體ML6之 控制端係耦接至N型電晶體ML7之控制端。 N型電晶體M L 7之導電參數召n係大於p型電晶體M L 6 之導電參數U型電晶體ML6之導電參數, 而N型電晶體ML7之導電參數心(!)队。其中,今)為電 12 200845542Type transistor. The second end of the pull-up transistor MPU and the pull-down transistor MPD respectively receive the voltage level SS and the voltage level GND, and the pull-up transistor and the control terminal of the pull-down transistor MPD are respectively connected to the inversion phase. The outputs of IB1 and (10). When the pull-up transistor MPU is enabled, the voltage level is pulled up by the first end of the private body. Conversely, when the pull-down transistor MPD is enabled, the voltage level VSS is output through the first terminal of the pull-down transistor MPD. Referring to Fig. 8, there is shown a detailed circuit diagram of the inverters IB and IB1 of Fig. 7. The inverter j and the Ιβ1 are respectively composed of a P t electric B body ML6 and an N type transistor ML7, respectively. The first end of the p-type transistor ML6 receives the voltage level VDD, and the second end of the N-type transistor ML7 receives the voltage level NVSS. The second end of the p-type transistor is coupled to the first end of the N-type transistor ML7, and the control end of the p-type transistor ML6 is coupled to the control end of the N-type transistor ML7. The conductivity parameter of the N-type transistor M L 7 is greater than the conductivity parameter of the conductivity parameter U-type transistor ML6 of the p-type transistor M L 6 , and the conduction parameter of the N-type transistor ML7 (!) team. Among them, today) for electricity 12 200845542

三達編號:TW3681PA 晶體之寬度長度比;〜為電洞移動率;八為電子移動率;C 為單位面積之氧化層電容。 當導電參數大於導電參數,即輪出電壓下降速 度大於上升速度,將使得反相器ΙΒ0及Ιβ1輸出之反相輸 出信號Ν14及Ν15彼此互不重疊(〇verlap)。如此一來在 先關後開的原則下,將避免拉升電晶體Mpu及拉降電晶體 MPD被同時導通時,所產生暫態電流(Transient _ Current),進而降低負電源切換電路的功率消耗。 請參照第9圖,其繪示係為負電源切換電路之波形 圖。舉例來說,電壓位準VDD等於2.5V,而電壓位準NVSS 等於-7V。當控制信號VSS-SEL由2.5¥改變為(^後,輸 出信號N12由-7V改變為2· 5V,而輸出信號N13由2. 5V 改變為-7V。反相輸出信號N14由2· 5V改變為-7V,而反 相輸出信號N15由-7V改變為2· 5V,使得輸出電路720之 輸出電壓VSS由0V改變為-1^。 • 相反地,當控制信號VSS-SEL由0V改變為2·5ν後, 輸出信號Ν12由2· 5V改變為-7V,而輸出信號Ν13由-7V 改變為2· 5V。反相輸出信號Ν14由-7V改變為2. 5V,而反 相輸出信號Ν15由2· 5V改變為-7V,使得輸出電路720之 輸出電壓VSS由-7V改變為0V。 由於反相輸出信號Ν14及Ν15係不重疊 (Non-Overlap),使得拉升電晶體1?11及拉降電晶體|〇^ 不會被同時致能。故不會產生暫態電流(Transient Current)同時流經拉升電晶體MPU及拉降電晶體MPD,進 13 200845542Sanda number: TW3681PA The width to length ratio of the crystal; ~ is the hole mobility; eight is the electron mobility; C is the oxide capacitance per unit area. When the conduction parameter is greater than the conduction parameter, that is, the wheel voltage drop rate is greater than the rise speed, the inverted output signals Ν14 and Ν15 of the inverters ΙΒ0 and Ιβ1 outputs are not overlapped with each other (〇verlap). In this way, under the principle of first turning off and then turning on, the transient current (Transient _ Current) generated when the pull-up transistor Mpu and the pull-down transistor MPD are simultaneously turned on will be avoided, thereby reducing the power consumption of the negative power switching circuit. . Please refer to Fig. 9, which is a waveform diagram of a negative power switching circuit. For example, the voltage level VDD is equal to 2.5V and the voltage level NVSS is equal to -7V. When the control signal VSS-SEL is changed from 2.5¥ to (^, the output signal N12 is changed from -7V to 2.5V, and the output signal N13 is changed from 2. 5V to -7V. The inverted output signal N14 is changed by 2·5V. It is -7V, and the inverted output signal N15 is changed from -7V to 2.5V, so that the output voltage VSS of the output circuit 720 is changed from 0V to -1^. • Conversely, when the control signal VSS-SEL is changed from 0V to 2 After 5ν, the output signal Ν12 is changed from 2·5V to -7V, and the output signal Ν13 is changed from -7V to 2·5V. The inverted output signal Ν14 is changed from -7V to 2. 5V, and the inverted output signal Ν15 is 2·5V is changed to -7V, so that the output voltage VSS of the output circuit 720 is changed from -7V to 0V. Since the inverted output signals Ν14 and Ν15 do not overlap (Non-Overlap), the pull-up transistor 1?11 and pull The power-down crystal|〇^ will not be simultaneously enabled, so it will not generate transient current (Transient Current) while flowing through the pull-up transistor MPU and pull-down transistor MPD, into 13 200845542

三達編號:TW3081PA 而減少負電源切換電路7 0的功率消耗。 。本發明上述實施例所揭露之電源切換電路,係利用反 相二輸出不重豐的反相輸出信號,使得拉升電晶體及拉降 電晶體不會被同時致能。故*會產生暫態錢(Transient Current)同時流經拉升電晶體及拉降電晶體,進而減少電 源切換電路的功率消耗。 、^、上所述,雖然本發明已以一較隹實施例揭露如上, • ’其並非用以限定本發明。本發明所屬技術領域中具有通 系知識者’在不脫離本發明之精神和範圍内,當可作各種 之更動與潤飾。因此,本發明之保護範圍當視後附之申請 專利範圍所界定者為準。 14 200845542The third wire number: TW3081PA reduces the power consumption of the negative power switching circuit 70. . The power switching circuit disclosed in the above embodiments of the present invention utilizes the inverted output signal of the inverted phase two output so that the pull-up transistor and the pull-down transistor are not simultaneously enabled. Therefore, it will generate Transient Current while flowing through the pull-up transistor and pull-down the transistor, thereby reducing the power consumption of the power switching circuit. The present invention has been described above with reference to a preferred embodiment, and is not intended to limit the invention. Those skilled in the art having the knowledge of the present invention can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. 14 200845542

三達編號:TW3081PA 【圖式簡單說明】 第1圖繪示係為傳統電源切換電路。 第2圖繪示係為傳統電源切換電路之波形圖。 第3圖繪示係為依照本發明一較佳實施例的一種電 源切換電路之方塊圖。 第4圖繪示係為正電源切換電路之電路圖。 第5圖繪示係為第4圖之反相器IB0及IB1之細部電 路圖。 ® 第6圖繪示係為正電源切換電路之波形圖。 第7圖纟會不係為負電源切換電路之電路圖。 第8圖繪示係為係為第7圖之反相器IB0及IB1之細 部電路圖。 第9圖繪示係為負電源切換電路之波形圖。 15 200845542Sanda number: TW3081PA [Simple description of the diagram] Figure 1 shows the traditional power switching circuit. Figure 2 is a waveform diagram showing a conventional power switching circuit. Figure 3 is a block diagram of a power switching circuit in accordance with a preferred embodiment of the present invention. Figure 4 is a circuit diagram showing a positive power switching circuit. Fig. 5 is a detailed circuit diagram showing the inverters IB0 and IB1 of Fig. 4. ® Figure 6 shows the waveform of the positive power switching circuit. Figure 7 is not a circuit diagram of the negative power switching circuit. Fig. 8 is a detailed circuit diagram showing the inverters IB0 and IB1 of Fig. 7. Figure 9 is a waveform diagram showing a negative power switching circuit. 15 200845542

三達編號:TW3681PA 【主要元件符號說明】 10 :傳統電源切換電路 30 ··依照本發明較佳實施例之電源切換電路 40 :正電源切換電路 70 :負電源切換電路 110、310、410、710 :位準偏移器 120、320、420、720 :輸出電路 ML0、ML1、ML4、ML6 ·· P 型電晶體 — ML2、ML3、ML5、ML7 ·· N 型電晶體 330、340、IL0、ΙΒ0、IB1 :反相器 MPU :拉降電晶體 MPD :拉升電晶體 VSS-SEL、VCC—SEL、V-SEL :控制信號 NO、N1、Μ、N5、N8、N9、N12、N13 :輸出信號 Ν2、Ν3、Ν6、Ν7、Ν10、Ν11、Ν14、Ν15 :反相輸出信 號 • VSS、VCC :輸出電壓Sanda number: TW3681PA [Description of main component symbols] 10: Conventional power switching circuit 30 · Power switching circuit 40 according to a preferred embodiment of the present invention: Positive power switching circuit 70: Negative power switching circuit 110, 310, 410, 710 : level shifters 120, 320, 420, 720: output circuits ML0, ML1, ML4, ML6 · P-type transistors - ML2, ML3, ML5, ML7 · N-type transistors 330, 340, IL0, ΙΒ0 IB1: Inverter MPU: Pull-down transistor MPD: Pull-up transistor VSS-SEL, VCC-SEL, V-SEL: Control signals NO, N1, Μ, N5, N8, N9, N12, N13: Output signal Ν2, Ν3, Ν6, Ν7, Ν10, Ν11, Ν14, Ν15: Inverted output signal • VSS, VCC: output voltage

Il(MPD) 、 Il(MPU) 、 I2(MPD) 、 I2(MPU) 、 I3(MPD)、 I3(MPU):電流 VDD、NVSS、GND、V卜 V2、VPP :電壓位準Il (MPD), Il (MPU), I2 (MPD), I2 (MPU), I3 (MPD), I3 (MPU): Current VDD, NVSS, GND, V Bu V2, VPP: Voltage Level

Claims (1)

200845542 三達編號·· TW3681PA 十、申請專利範圍: 1. 一種電源切換電路,包括: 一位準偏移器(Level Shift),用以根據一控制信號 輸出一第一輸出信號及一第二輸出信號; 一第一反相器,用以根據該第一輸出信號輸出一第一 反相輸出信號; 一第二反相器,用以根據該第二輸出信號輸出一第二 反相輸出信號,該第一反相輸出信號與該第二反相輸出信 _ 號係互不重疊(Overlap); 一輸出電路,用以根據該第一反相輸出信號及該第二 反相輸出信號選擇性地輸出一第一電壓位準或一第二電 壓位準。 2. 如申請專利範圍第1項所述之電源切換電路,其 中該第一反相器包括: 一第一 P型電晶體,具有一第一導電參數;以及 一第一N型電晶體,係耦接至該第一P型電晶體,並 ® 具有一第二導電參數,該第一導電參數與該第二導電參數 係不相同。 3. 如申請專利範圍第2項所述之電源切換電路,其 中當該第一電壓位準或該第二電壓位準大於零時,該第一 導電參數係大於該弟二導電參數。 4. 如申請專利範圍第2項所述之電源切換電路,其 中當該第一電壓位準或該第二電壓位準小於等於零時,該 第二導電參數係大於該第一導電參數。 17 200845542 三達編號:TW3681PA 5·如申請專利範圍第1項所述之電源切換電路,其 中該第二反相器包括: 第一 Ρ型電晶體,具有一第三導電參數;以及 第一 Ν型電晶體,係耦接至該第二ρ型電晶體,並 具有-第四導電參數,該第三導電參數與該第四導電參數 係不相同。 一 6.如申請專利範圍第5項所述之電源切換電路,其 巾當該第-電歷位準或該第二電壓位準大於零時,該第三 書 導電參數係大於該第四導電參數。 二7·如申請專利範圍第5項所述之電源切換電路,其 中當該第一電壓位準或該第二電壓位準小於等於零時,該 第四導電參數係大於該第三導電參數。 8·如申請專利範圍第丨項所述之電源切換電路,其 中該弟反相器係為互補式金屬氧化物半導體 (Complementary Meta卜Oxide- Semiconductor, CMOS)反 相器。 _ 9·如申請專利範圍第1項所述之電源切換電路,其 中該第二反相器係為互補式金屬氧化物半導體反相器 (Complementary Metal-Oxide- Semiconductor Inverter) ° 10·如申請專利範圍第1項所述之電源切換電路,其 中該輸出電路包括一拉升(Pull Up)電晶體及一拉降(Pull Down)電晶體’該拉升電晶體及該拉降電晶體分別根據該 第一反相輸出k號及該第二反相輸出信號選擇性地輸出 該第一電壓位準或該第二電壓位準。 18 200845542 三達編號·’ TW3681PA 中請專利範圍第1G項所述之電W換電路, 其中該拉升電晶體及職降電晶體 ^^路, 二如申請專利範圍第u項所:二 拉降電晶體之控制端第:壓位準’該 該拉降電晶體被致能時,該第一兩 了之輪出端,當 體之第二端輸出。 "%纽準係羥該拉降電晶 13. 如申請專利範圍第u項述 其中該拉升電晶體之第-端用以接收該第二電路, 體之控制端係麵接至該第二:相: 體之第二端輸出。 早係<該拉升電晶 14. 如申請專利範圍第 > 其中該拉升電晶體及軌降電晶體換電路, 15· _請專利範圍第14項所述之 其中該拉降電晶體之第二端心純該第換電路, 拉降電晶體之控制端係耦接至該第一反相哭:=位準’該 該拉降電晶體被致能時,兮m °。之輪出端,當 體之第-端輸出。 弟—隸位準係經該拉降電晶 16.如申請專利範圍第14項所 ==升電晶體之第二端用以接收該第二’電:t:: 书晶體之控制端係輕接至該第二反相器於’ ’該 該拉升電晶體被致能時,該第二電 ^端,當 體之第二端輸出。 +係%該拉升電晶 19200845542 三达号·· TW3681PA X. Patent application scope: 1. A power switching circuit comprising: a level shifter (Level Shift) for outputting a first output signal and a second output according to a control signal a first inverter for outputting a first inverted output signal according to the first output signal; a second inverter for outputting a second inverted output signal according to the second output signal, The first inverted output signal and the second inverted output signal are not overlapped with each other; an output circuit for selectively selecting the first inverted output signal and the second inverted output signal according to the first inverted output signal A first voltage level or a second voltage level is output. 2. The power switching circuit of claim 1, wherein the first inverter comprises: a first P-type transistor having a first conductive parameter; and a first N-type transistor The first P-type transistor is coupled to the first P-type transistor, and has a second conductive parameter, the first conductive parameter being different from the second conductive parameter. 3. The power switching circuit of claim 2, wherein the first conductive parameter is greater than the second conductive parameter when the first voltage level or the second voltage level is greater than zero. 4. The power switching circuit of claim 2, wherein the second conductive parameter is greater than the first conductive parameter when the first voltage level or the second voltage level is less than or equal to zero. 17 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The type of transistor is coupled to the second p-type transistor and has a fourth conductive parameter, the third conductive parameter being different from the fourth conductive parameter. [6] The power switching circuit of claim 5, wherein when the first electronic level or the second voltage level is greater than zero, the third book conductive parameter is greater than the fourth conductive parameter. The power switching circuit of claim 5, wherein the fourth conductive parameter is greater than the third conductive parameter when the first voltage level or the second voltage level is less than or equal to zero. 8. The power switching circuit of claim 1, wherein the inverter is a Complementary Meta-Oxide-Semiconductor (CMOS) inverter. _9. The power switching circuit according to claim 1, wherein the second inverter is a complementary metal-oxide semiconductor inverter (Complementary Metal-Oxide- Semiconductor Inverter). The power switching circuit of claim 1, wherein the output circuit comprises a pull-up transistor and a pull-down transistor, wherein the pull-up transistor and the pull-down transistor are respectively The first inverted output k number and the second inverted output signal selectively output the first voltage level or the second voltage level. 18 200845542 三达号·' TW3681PA Please refer to the electric W-changing circuit described in item 1G of the patent scope, where the pull-up transistor and the drop-off transistor ^^路, as in the patent application scope item u: two pull The control terminal of the power-down crystal is: the pressure level is 'when the pull-down transistor is enabled, the first two rounds of the output end, when the second end of the body is output. "% 准系系hydroxyl pull down crystal 13. As claimed in the scope of the patent, wherein the first end of the pull-up transistor is used to receive the second circuit, the control end of the body is connected to the first Two: Phase: The second end of the body is output. The early system < the pull-up electric crystal 14. As claimed in the patent range > wherein the pull-up transistor and the rail-drop transistor change circuit, 15 · _ patent range of the 14th item of the pull-down transistor The second end of the circuit is purely the first circuit, and the control terminal of the pull-down transistor is coupled to the first reverse phase crying: = level 'when the pull-down transistor is enabled, 兮m °. The end of the wheel, the first end of the body output. The younger brother-subordinate system is subjected to the pull-down electron cell 16. As claimed in claim 14, the second end of the riser crystal is used to receive the second 'electricity: t:: the control end of the book crystal is light Connected to the second inverter, when the pull-up transistor is enabled, the second terminal is outputted by the second end of the body. +%% of the lifted crystals 19
TW096116189A 2007-05-07 2007-05-07 Power switch circuit TWI347730B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606683B (en) * 2016-05-03 2017-11-21 國立中興大學 Zero static power consumption multi complementary multilevel converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606683B (en) * 2016-05-03 2017-11-21 國立中興大學 Zero static power consumption multi complementary multilevel converter

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