200845414 九、發明說明： 【發明所屬之技術領域】 別地本於種及其方法，並且特 體結構及其方法。 啕放曰進蚤先效率之集光型發光二極 【先前技術】 封膠㈡體口-載台上，再予以 凹槽，以放置該發光二將該載台上形成- 極體，其發射的光線可穿過㈣石在ϋ為基材的發光二 ί他2向該凹槽開口方向的:線固以 對於凹 造成光 2用魏板或轉，其可提供的反射效率有=。 s=i:r制’多僅以概略的凹槽形狀為主… 法 ，=決3^於提供—種高集光型發光二極體結構及其方 【發明内容】 本發明之一範疇在於提供一種集光型發光二極體結 力，將發光二極體置放於特殊設計之凹槽，可有效增進集乂能 —本發明之集光型發光二極體結構包含一載台、一凹槽、一第 ^射層、一黏著層以及一發光二極體。該凹槽係蝕刻形成在該 載台上。該凹槽具有一深度以及一寬度，該寬度對該深度比介= 〇至50之間，其中該寬度介於ΙΟΟμιη至4000μηι之間，該深产 200845414 該第—反射層位於該凹槽之上。該黏 置i談第丄Ϊ射#之卜二。該發光二極體係以該黏著層黏著設 接之%_面二丨# °〜凹槽具有—底表面以及與該底表面連 =度之㈣該底表面間形成-爽角，該夹角介於 其中，該載台之材料可為Al2〇3、Sic、GaAs、⑽、αιν、 ϋ雷H 上述㈣任意齡。該第—反射層可為 人%人ί®金f反射層或—介電反射層與金屬反射層之組 厂H 娜可為二氧切、-氧化々、四氮化矽、 m體、非結晶體半導體、氧化鋅、氧化鎳、二 ^化物或上述材料任意組合。該介電反射層亦可為包含 偏!^屈之不同折射指數材料任意組合。該金屬反射層可包含複 ί 個金屬粒子中之-個金屬粒子可為鉻粒 Α卜A'H子 '銀粒子或鈦粒子。該金屬反射層之材料可為 Λ R \、π 1、&、Pd、Sn、Μ、Ζη、Ή、Pb、Ge、CU、 Γ膽、AUZn或上述材料㈣組合。雜著層之材 ί可f i、銀”、錫、導1膠及上述材料任意組合。該發 光-極體包含-基板’該基板之材料可為Al2〇3、Sic、、200845414 IX. Description of the invention: [Technical field to which the invention pertains] Others and methods thereof, and specific structures and methods thereof.集 啕 蚤 蚤 效率 之 之 【 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 先前 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二The light can pass through (4) the stone in the direction of the opening of the groove. The line is fixed to cause the light to be used for the concave surface or the turn, which can provide a reflection efficiency of =. s=i: r system is mainly based on a rough groove shape... Method, = 3 is provided to provide a high-concentration type light-emitting diode structure and its side [Abstract] One aspect of the present invention is to provide a The light-collecting light-emitting diode is placed in a specially designed groove to effectively enhance the collection energy. The concentrating light-emitting diode structure of the present invention comprises a stage and a groove. , a first shot layer, an adhesive layer and a light emitting diode. The recess is etched on the stage. The groove has a depth and a width, the width ratio is between 〇 and 50, wherein the width is between ΙΟΟμιη and 4000μηι, the deep product 200845414, the first reflective layer is located above the groove . This sticky i talks about the second shot. The light-emitting diode system is formed by adhering the adhesive layer to the %_face two 丨#°~ groove having a bottom surface and a bottom angle of the bottom surface (four) forming a cool angle between the bottom surface. The material of the stage may be Al2〇3, Sic, GaAs, (10), αιν, ϋ雷H, and (4) any age. The first reflective layer can be a human-made ί® gold f reflective layer or a group of a dielectric reflective layer and a metal reflective layer. H Na can be dioxo, yttria, yttrium nitride, m body, non- A crystalline semiconductor, zinc oxide, nickel oxide, a compound or any combination of the above materials. The dielectric reflective layer can also be any combination of different refractive index materials including partial bends. The metal reflective layer may comprise one of the plurality of metal particles, which may be a chromium particle, a 'H' silver particle or a titanium particle. The material of the metal reflective layer may be Λ R \, π 1 , & Pd, Sn, Μ, Ζη, Ή, Pb, Ge, CU, Γ, AUZn or a combination of the above materials (4). The material of the hybrid layer can be any combination of the above materials. The light-emitting body includes a substrate. The material of the substrate can be Al2〇3, Sic,
GaN、AIN、GaP、Si、ZnO、Mn〇及上述材料任意組合。 另外該木光型發光二極體結構可進一步包含一 上’可提供顏色不同於該發光二極體發射光線^顏 色之反射絲。此外，該集光型發光二極體結構亦可進—步包含 ^螢光粉之填充材料填充於該發光二極體與該凹槽間，以及一 第巧射層於該發光二極體上。#此，由該發光二極體所發射出 之光線均由該第-反射層以及該第二反射層反射，再經由該 光粉之填充材料發射出去。 一本發明之集光型發光二極體製造方法包含(a)提供一載台，（b) 於該載台上形成一凹槽，（c)於該凹槽上塗佈一第一反射層，（由於 200845414 上 該第-反射層之上塗佈-黏著層；及(e)設置―發光二極體於該黏 著層上’使得該發光二極體藉由該黏著層設置在該第一反射展 其中步驟(b)得以-_製程於該載台上形成該凹槽。該飿刻 製程可使用-化學溶液。該化學溶液係一具〇H官能基之中性或 性混合溶液或其他具賴效用之溶 Ϊ ：^f f液之重量^分比濃度大於5%。該侧製程可在溫 間ί施。另外，轉光型發光二極體製造方法 AM* = 之後，於該發光二極體與該凹槽間填充一含螢 光私填充材料，並於該發光二極體上塗佈一第二反射層。此外， 極Ϊ製造方法亦可進一步於步_之後，於該第 構可ί夕υίϋ極體係包含—基板及i晶結構。該遙晶結 兮缓^屏卜# =…形成.首先，形成一緩衝層於該基板上；再於 成一主動層；最後於該主動層上形成—p型半導體層料體層上心 反射:ί*ί?ϊΐ細發光二極體結構及其方法，有效率地 反射先線並集中光線，以獲取更高的亮度。 3千 式得:二點與精神可以藉由以下的發明詳述及所附圖 【實施方式】 例之構A f之-較佳具體實施 18。凹槽14係射f开:黏者層17以及發光二極體 此成在載口 12上。凹槽14具有d罙度以及 7 200845414 一見度。根據本發明，凹槽 間，寬度介於1〇〇Mm至400π之見度f木，介於〇至5〇之 300μηι之間。黏著戶17 μΠ1之間，且深度介於1〇μιη至 設置在黏著層17上'使得；^反射 =16上。發光二極體18係 置在反射層16上。^14^：1 體18融黏㈣17黏著設 接之兩個側表面144，;_側、/^面33與底表面142連 固if係介於1〇度至的度之間。於實際應 凹们4之兩個侧表面刚不以對稱為限。GaN, AIN, GaP, Si, ZnO, Mn〇 and any combination of the above materials. In addition, the wood light-emitting diode structure may further comprise a reflective wire which provides a color different from that of the light-emitting diode. In addition, the concentrating light-emitting diode structure may further include a filling material of the phosphor powder filled between the light-emitting diode and the groove, and a photo-emitting layer on the light-emitting diode. . #光的光光 emitted by the light-emitting diode is reflected by the first-reflecting layer and the second reflective layer, and then emitted through the filling material of the light powder. A method for fabricating a light-collecting light-emitting diode according to the present invention comprises (a) providing a stage, (b) forming a groove on the stage, and (c) coating a first reflective layer on the groove. (due to the coating-adhesive layer on the first-reflective layer on 200845414; and (e) setting the "light-emitting diode on the adhesive layer" such that the light-emitting diode is disposed at the first by the adhesive layer The step (b) is performed by forming a groove on the stage. The etching process can use a chemical solution, which is a neutral or sexual mixed solution of 〇H functional group or the like. The solvent of the effect is: the weight of the ^ff liquid is more than 5%. The side process can be applied at a temperature. In addition, the manufacturing method of the light-emitting diode is AM* = after the light-emitting A phosphor-containing filling material is filled between the pole body and the groove, and a second reflecting layer is coated on the light-emitting diode. Further, the pole manufacturing method may further be followed by the step ί 夕 υ ϋ ϋ ϋ 包含 包含 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板Layered on the substrate; and then formed into an active layer; finally formed on the active layer - p-type semiconductor layer material layer on the center of the reflection: ί * ί ϊΐ fine light-emitting diode structure and its method, efficient reflection first Line and concentrate the light to obtain higher brightness. 3 thousand formula: 2 points and spirit can be detailed by the following invention and the drawings [embodiment] Example A f - preferred embodiment 18. The groove 14 is f-opened: the adhesive layer 17 and the light-emitting diode are formed on the carrier 12. The groove 14 has a degree of d and 7 200845414. According to the invention, the width between the grooves is 1 〇〇Mm to 400π visibility f wood, between 〇 to 5〇300μηι. Adhesive between 17 μΠ1, and depth between 1〇μιη to be placed on the adhesive layer 17 'make; ^ reflection = 16 The light-emitting diode 18 is placed on the reflective layer 16. ^14^: 1 body 18 is fused (four) 17 adhesively attached to the two side surfaces 144; _ side, / ^ surface 33 and bottom surface 142 solid if The system is between 1 degree and degree. The two side surfaces of the actual concave 4 are not called the limit.
A1N 此gU 台z 二材料可為 Al2〇3、SiC、GaAs、GaN、 為-介。層=3上上遠组合。反射層Μ ;:物介層之材=金=之 ^ Ϊ曰曰體半導體、非結晶體半導體、氧化鋅、氧化鎳、二 S以ί之材料任意組合。介電反射層亦可為包含兩 n立不同折射心數材料任意組合。金屬反射層可包含複數個 金屬粒子。該複數個金屬粒子中之一個金屬粒子可為鉻粒子、鎳 粒子銘粒子、銀粒子或鈦粒子。該金屬反射層之材料可為A卜A1N This gU stage z material can be Al2〇3, SiC, GaAs, GaN, or a dielectric. Layer = 3 on the upper and far combination. Reflective layer Μ;: material of the material layer = gold = ^ Ϊ曰曰 body semiconductor, amorphous semiconductor, zinc oxide, nickel oxide, two S ί any combination of materials. The dielectric reflective layer can also be any combination of materials comprising two different refractive index numbers. The metal reflective layer can comprise a plurality of metal particles. One of the plurality of metal particles may be a chromium particle, a nickel particle, or a silver particle or a titanium particle. The material of the metal reflective layer can be Ab
Ag、Pt、Ni、Cr、Pd、Sn、Au、Zn、Ti、Pb、Ge、Cu、AuBe、Ag, Pt, Ni, Cr, Pd, Sn, Au, Zn, Ti, Pb, Ge, Cu, AuBe,
AuGe PbSn、AuZn或上述材料任意組合。黏著層17之材料可 為金、銀、鉛、銦、錫、導電膠及上述材料任意組合。 請參閱圖一 B以及圖二A，圖一 B係繪示圖一 A中集光型 發光二極體結構1之光線行進示意圖。圖二A係繪示集光型發光 二極體結構1之電流對光的強度比較之示意圖。發光二極體18 包含基板184以及遙晶結構182。基板184之材料可為ai2q3、 Sic、GaAs、GaN、AIN、Gap、Si、ZnO、Mn〇 及上述材料任意 組合。遙晶結構182所發射出之光線向四面八方行進。部分的光 線係直接發射出凹槽14。部分的光線經過基板184再經由底表面 142以及侧表面144上的反射層16反射，再射出凹槽14。藉 此’發光二極體18所發射之光線將可完全地發射及被反射出凹 8 200845414 槽14外，致使集光型發光二極體結#1可提供較高的亮度以及 集光效率’如圖-B巾虛線箭綱示。歧有伽凹槽設計的封 裝結構比較’本發明之集紐發光二鋪輯丨_提昇光的強 度’如圖二A所示。 另外’本發明之集光型發光二極體結構i可進一 充於發先二極體18與凹槽14間’如圖二Β所示。藉此，由“ 二極體18所發射出之光線均由反射層16、19反射，再經由^ 充=2G發射出去。反射層19之材料如同前ΐ反射層 ϋ在魏。此外’絲型發光二極聽構亦可進 榮it;ffL21於反射層16上，並且黏著層17則位於 榮it層 如圖二c所示。藉此，可提供顏色不同於發光 一極體18發射光線之顏色之反射光線。 光二ΐίϊΐίΐ圖ΐ騎示根據該較佳具體實施例之集光型發 法包含··提供載台12，如步驟S卿所示；於載 二== 丄層16上塗佈黏著層17，如步驟所示； 由光一極體18於黏者層17上’使得發光二極體18藉 由_者層黏著設置在反射層16上，如步驟_8所示。精 使用3二侧製程形成於載台12。該_製程可 液、一液。該化學溶液係r具0h官能基之中性或驗性溶 化學产i=、二酸，混合溶液或其他具侧效用之溶液。該 至分比濃度大於5%。該侧製程可在溫度20。〇 ’因此凹槽14的幾何形狀決定於載台12的材質盘 泡ΰ Ϊΐ擇。再藉由調整化學溶液的種類、溫度、濃度與Ϊ 可進-步產生獨賴何雜。需注意的是，完整的封 200845414 序係為害知技術’在此不再贅述。前述之 一 即可形成 ^再經過後續_餘序後(例如打線、封膠物 體 木光型發光二極體結構1〇 後，ίί* 發光二極體製造方法可進—步於步驟S108之 Γ 與凹槽14間填充含縣粉之材料20， 極體上ΐ佈另—反射層19。此外，集光型發光二 3 ίίίΐ可進"步於步驟S1G4之後，於該第-反射層上 ί^ί=ί7，。紅轉S1G6麟舰紅秘-粉層\ n型半導體，上^再tit e?成—N型半導體層；接著於 體層ϋ騎；最後於主崎上形成-P型半導 =於先前技術，本發明之集光型發光： 1 法，更有效率地反射光線並集中光線，以獲取更高的亮1氣、方 發明=======加清楚描述本 ° ^ .ϊΐ；；ί ί ίΐί I： 200845414 【圖式簡單說明】 二極罐本伽之—齡具财糊之集光型發光 意圖圖—δ鱗示圖—A中集光型發光二極體結構之光線行進示 一 f二A係繪示集光型發光二極體結構之電流對光的強度比較 之不思圖。 圖二；B係繪示具有另一反射層及填充材料之集光型發光二 體結構之示意圖。 圖二C係繪示具有螢光粉層之集光型發光二極體結構之 圖三係繪示根據該較佳具體實施例之集光型發光二極體製造 方法之流程圖。 【主要元件符號說明】 1 :集光型發光二極體結構 12 ·載台 14 :凹槽 16、19:反射層 黏著層 18 :發光二極體 20 :填充材料 21 :螢光粉層 142 :底表面 144 :侧表面 11 200845414 184 ··基板 182 ·蠢晶結構 α :夾角 S100〜108 :流程步驟AuGe PbSn, AuZn or any combination of the above materials. The material of the adhesive layer 17 may be gold, silver, lead, indium, tin, conductive paste and any combination of the above materials. Referring to FIG. 1B and FIG. 2A, FIG. 1B is a schematic diagram showing the ray travel of the concentrating light-emitting diode structure 1 in FIG. Figure 2A is a schematic diagram showing the comparison of the intensity of the current versus light by the concentrating light-emitting diode structure 1. The light emitting diode 18 includes a substrate 184 and a telecrystalline structure 182. The material of the substrate 184 may be ai2q3, Sic, GaAs, GaN, AIN, Gap, Si, ZnO, Mn〇 and any combination of the above materials. The light emitted by the telecrystal structure 182 travels in all directions. Part of the light line directly emits the groove 14. A portion of the light passes through the substrate 184 and is reflected by the bottom surface 142 and the reflective layer 16 on the side surface 144, and exits the recess 14. Thereby, the light emitted by the LED 26 can be completely emitted and reflected out of the recess 8 200845414, so that the concentrating LED junction #1 can provide higher brightness and light collection efficiency. As shown in Figure-B, the dotted arrow outlines. The comparison of the package structure with the gamma groove design is as shown in Fig. 2A. Further, the concentrating light-emitting diode structure i of the present invention can be further filled between the first diode 18 and the recess 14 as shown in Fig. 2A. Thereby, the light emitted by the diode 18 is reflected by the reflective layers 16, 19, and then emitted through the charge = 2G. The material of the reflective layer 19 is like the front reflective layer 魏 in the Wei. The light-emitting diode structure can also be advanced; ffL21 is on the reflective layer 16, and the adhesive layer 17 is located on the radiant layer as shown in Fig. 2c. Thereby, the color can be provided differently from the light emitted by the light-emitting body 18. The reflected light of the color. The light collecting method according to the preferred embodiment comprises: providing the stage 12 as shown in step S; coating on the second layer == 丄 layer 16 The adhesive layer 17 is as shown in the step; the light-emitting diode 18 is disposed on the adhesive layer 17 such that the light-emitting diode 18 is adhered to the reflective layer 16 by the layer of the layer, as shown in step _8. The two-side process is formed on the stage 12. The process can be liquid, one liquid. The chemical solution is a 0h functional group neutral or producible chemical production i=, diacid, mixed solution or other side effects The solution has a concentration greater than 5%. The side process can be at a temperature of 20. 〇' Therefore the geometry of the groove 14 is determined by The material of the table 12 can be selected. By adjusting the type, temperature, concentration and enthalpy of the chemical solution, it can be produced in a step-by-step manner. It should be noted that the complete sealing of the 200845414 sequence is a harmful technology. This will not be described again. One of the foregoing can be formed and then passed through the subsequent _ residual order (for example, the wire-lighting and sealing body of the wooden light-emitting diode structure is 1〇, the ίί* light-emitting diode manufacturing method can be advanced) After the step S108 and the groove 14, the material containing the county powder 20 is filled, and the polar body is covered with the other reflective layer 19. In addition, the light collecting type illumination can be further followed by the step S1G4. On the first-reflective layer ί^ί=ί7, red to S1G6 lin ship red secret - powder layer \ n-type semiconductor, on ^ then tit e? into - N-type semiconductor layer; then in the body layer ϋ ride; finally in the main Forming a -P type semiconductor = In the prior art, the concentrating type illuminating of the present invention: 1 method, more efficiently reflecting light and concentrating light to obtain a higher bright gas, the invention invention ====== = Add a clear description of this ^ ^ .ϊΐ;; ί ίΐί I: 200845414 [Simple diagram] Two-pole cans of this gamma - age The light-collecting illuminating intention map of the glutinous paste—the δ scale diagram—the light trajectory of the concentrating light-emitting diode structure in A shows the intensity of the current-to-light of the concentrating light-emitting diode structure. Figure 2; Figure B shows a schematic diagram of a concentrating light-emitting two-body structure with another reflective layer and a filling material. Figure 2C shows a concentrating light-emitting diode with a phosphor layer. Figure 3 is a flow chart showing a method of manufacturing a light-collecting light-emitting diode according to the preferred embodiment. [Explanation of main components] 1 : Light-collecting light-emitting diode structure 12 · Stage 14 : grooves 16, 19: reflective layer adhesive layer 18: light-emitting diode 20: filling material 21: phosphor powder layer 142: bottom surface 144: side surface 11 200845414 184 · · substrate 182 · stupid crystal structure α: angle S100 ~108: Process steps
1212